A thermal photovoltaic radiator system, control method, medium, device and terminal

Abstract

The present invention belongs to the field of thermophotovoltaic technology, and discloses a thermophotovoltaic radiator, a control method, a medium, a device and a terminal, and determines the emission spectrum of a selective thermophotovoltaic radiator under ideal conditions; constructs a single-layer uniform dielectric film transmission model and a multi-layer uniform dielectric film transmission model respectively to clarify the working mechanism of the thermophotovoltaic radiator; constructs a broadband filter plus a short-wave filter model to achieve the design of the thermophotovoltaic radiator system. Through experimental simulation, the multi-layer uniform dielectric thermoradiator designed by the present invention based on the single-cavity filter model has a transmittance of 99% at a wavelength of 1.499 microns, which basically meets the ideal emission spectrum with sharp and high thermal emission conditions at 1.5 microns, reflecting the advantages of the model. The design results of the present invention verify the good effect of the transfer matrix method in the field of calculating emission spectra, provide the possibility for designing material structures for specific applications, and enhance the practicality of material informatics in the field of heat and mass transfer.

Description

Technical Field

[0001] The present invention belongs to the field of thermophotovoltaic technology, and in particular relates to a thermophotovoltaic radiator system, a control method, a medium, a device and a terminal. Background Art

[0002] At present, the thermal emitter in the thermophotovoltaic system mainly uses different material structures to adjust the emission of the absorbed photon heat, so that the wavelength of most of the emitted photons is lower than the band gap wavelength of the photovoltaic cell. Since the function of photovoltaic cells is limited to converting high-energy photons below a specific band gap wavelength, in order to improve the thermoelectric conversion efficiency of the thermophotovoltaic system, it is necessary to regulate the spectrum emitted by the thermal emitter. By controlling the emission spectrum of the thermophotovoltaic radiator, the heat loss and transmitted energy at the receiving end of the photovoltaic cell can be effectively reduced, and the stability of the working temperature of the photovoltaic cell can be ensured. In this process, the commonly used emission spectrum calculation methods are mainly Transfer Matrix Method (TMM), Finite Difference Time Domain Method (FDTD), and Rigorous Coupled Wave Analysis (RCWA).

[0003] Although the research on thermophotovoltaic system has been going on for decades, the actual conversion efficiency of thermophotovoltaic system is still far lower than the theoretical maximum. At present, the common problem in the structural design of selective radiators of thermophotovoltaic system is the selection of required materials and structural parameters.

[0004] In 1956, H.K. Kolm designed an original thermophotovoltaic system with an output power of 1W. In the 1960s, scholars from the Massachusetts Institute of Technology in the United States expounded the complete concept and principle of the thermophotovoltaic system. After decades of theoretical research, it was not until the early 1990s that some advantages of the thermophotovoltaic system were initially verified after experts developed low-bandgap gallium antimonide (GaSb) cells.

[0005] In 2003, Green proposed the third generation of solar cells characterized by low cost, high efficiency, non-toxicity, long life and high reliability, thus opening up a new era of research and development of new concept solar cells. In 2014, Evelyn Wang's team at MIT designed a photon-controlled solar thermal photovoltaic device that worked well in experiments. In their work, the thermal emitter is a multilayer thin film structure composed of silicon and silicon dioxide. The thickness of each layer is optimized so that its emission spectrum is consistent with the band gap of indium gallium arsenide antimony (InGaAsSb) cells. In 2018, Wang et al. developed a submicron-thick multilayer selective solar absorber composed of tungsten, silicon dioxide and silicon nitride, with an absorption rate of up to 95% in the solar band.

[0006] In recent decades, modern photovoltaic technology based on solar cells has developed rapidly. Thermal radiation energy, as one of the new energy sources, has naturally become a research hotspot for experts and scholars. In order to make full use of thermal radiation energy, thermophotovoltaic (TPV) technology came into being. As one of the most advanced distributed energy solutions, thermophotovoltaic systems use photovoltaic cells to convert thermal radiation energy from artificial heat sources into electrical energy using the photoelectric conversion characteristics of semiconductor PN junctions. The actual conversion efficiency of existing thermophotovoltaic systems is still far lower than the theoretical maximum value. In the structural design of selective radiators in thermophotovoltaic systems, the common problem is the selection of required materials and structural parameters. Multilayer film structures have attracted much attention due to their simple preparation and low cost.

[0007] At present, the design of selective radiators based on multilayer film structures mostly adopts simple periodic structures, while there are many candidate combinations of non-periodic structures. Different material combinations and the choice of thickness of each layer of material will affect the properties of the film, thereby causing huge differences in the system conversion efficiency.

[0008] Through the above analysis, the problems and defects of the prior art are as follows:

[0009] (1) The actual conversion efficiency of existing thermophotovoltaic systems is still far below the theoretical maximum. In the structural design of the selective radiator of the thermophotovoltaic system, the common problem is the selection of the required materials and structural parameters. Multilayer film structures have attracted much attention due to their simple preparation and low cost.

[0010] (2) Currently, the design of selective radiators based on multilayer film structures mostly adopts simple periodic structures, while there are many candidate combinations of non-periodic structures. Different material combinations and the choice of thickness of each layer will affect the properties of the film, resulting in huge differences in the system conversion efficiency. Summary of the invention

[0011] In view of the problems existing in the prior art, the present invention provides a thermal photovoltaic radiator system, control method, medium, device and terminal, and more particularly, relates to a thermal photovoltaic radiator system, control method, medium, device and terminal based on a transfer matrix method.

[0012] The present invention is implemented as follows: a control method for a thermal photovoltaic radiator system, the control method for the thermal photovoltaic radiator system comprising:

[0013] Determine the emission spectrum of the selective thermophotovoltaic radiator under ideal conditions; construct a single-layer uniform dielectric film transmission model and a multi-layer uniform dielectric film transmission model respectively to clarify the working mechanism of the thermal radiator; construct a broadband filter plus shortwave pass filter model to realize the design of the thermophotovoltaic radiator system.

[0014] Furthermore, the control method of the thermal photovoltaic radiator system comprises the following steps:

[0015] Step 1: Establish a single-layer uniform dielectric film transmission model based on the wave equation and Maxwell equations;

[0016] Step 2: Combined with the transfer matrix method, a multi-layer uniform dielectric film transmission model is established to obtain the relationship between the film transmittance and thickness and the relationship between the film transmittance and refractive index in the presence and absence of absorbing media;

[0017] Step three, add a short-wave pass filter to the bottom of the broadband filter to filter out long waves, establish a broadband filter plus short-wave pass filter model, and design a new filter structure that is superior to the single-cavity filter.

[0018] Furthermore, the construction of the single-layer uniform dielectric film transmission model in step 1 includes:

[0019] (1) Optical path difference

[0020] When 1 and 2 represent the upper and lower interfaces of the film, a unit of monochromatic light emitted from a point on a distant light source is incident on the film, part of it is reflected on interface 1, and the amplitude of the reflected light is r1; the other part passes through interface 1, is reflected on interface 2, and then emits through interface 1, and the amplitude of the reflected light is r2; when interface 1 and interface 2 are parallel to each other, the reflected light r1 and r2 are parallel to each other, meet and produce interference at infinity.

[0021] The interference intensity of light rays r1 and r2 depends on their optical path difference; if CD is perpendicular to light ray r1, the optical path difference between r1 and r2 is:

[0022] Δ=n1(AB+BC)-n0AD (1)

[0023] The geometric relationship is as follows:

[0024]

[0025] According to the law of refraction, the relationship between the refractive index of each layer of film is as follows:

[0026] n o sinθ o =n1sinθ1 (3)

[0027] Combining formulas (1), (2), and (3), we can obtain the following relationship between the optical path difference and the refractive index and thickness of the film:

[0028] Δ=2n1d1cosθ1 (4)

[0029] (2) Wave equation

[0030] A plane cosine wave propagates in a non-absorbing homogeneous medium, propagating along the positive direction of the x-axis with a wave speed of v; suppose the vibration equation at the origin 0 is known to be:

[0031] y o =A cosωt (5)

[0032] Where A is the amplitude and ω is the circular frequency T and v are the period and frequency respectively; y0 is the displacement of the vibration point from the equilibrium position at time zero; point P is any point on the wave line, and the distance from point 0 is x; when the vibration propagates from point 0 to point P, point P will repeat the vibration of point 0; the vibration needs When point 0 vibrates for t time, point P only vibrates The displacement of point P at time t is equal to the displacement of point 0 at The displacement of point P at time t is:

[0033]

[0034] Combining formula (4), the phase difference δ is:

[0035]

[0036] (3) Maxwell equations

[0037] For an isotropic medium, Maxwell's equations are expressed as:

[0038]

[0039] Where E is the electric field intensity vector, H is the magnetic field intensity vector, D is the electric displacement vector, B is the magnetic induction intensity vector, j is the current density vector, and j D is the displacement current vector ρ is the charge density.

[0040] It is known that the boundary conditions for the continuity of the electric field and magnetic field tangent vectors on both sides of the interface are:

[0041]

[0042] Substituting into Maxwell's equations, we get:

[0043]

[0044] The characteristic matrix of a dielectric layer or film contains all physical parameters that reflect the properties of the dielectric, as shown in equation (11), where ζ1 is the admittance.

[0045]

[0046]

[0047] Since the light is incident vertically, θ1=0°, the admittance of the S wave and the P wave is n1.

[0048] The column vector It is called the combined eigenvector of the transmission medium and the film layer.

[0049] because:

[0050]

[0051] Solving B and C from equation (10), we get:

[0052]

[0053] Substituting the unified reflection coefficient formula of S-wave polarization and P-wave polarization into the formula, we get:

[0054]

[0055] In the formula, ζ o represents the optical effective admittance in the incident medium on the upper side of the interface, and the corresponding incident angle in the incident medium is θ o ; Y represents the combined admittance in the transmission medium below the interface.

[0056] The reflection coefficient of the single-layer dielectric film is obtained as:

[0057]

[0058] The reflectivity is as follows for both S-wave polarization and P-wave polarization:

[0059]

[0060] The transmittance of S-wave polarization and P-wave polarization is obtained as:

[0061]

[0062] For the case where a single-layer plane medium is an absorbing layer, the calculation of the interface reflection coefficient only requires changing the refractive index n to the complex refractive index The effective admittance ζ is changed to complex effective admittance The expression is:

[0063]

[0064] The eigenvector of a single-layer film is:

[0065]

[0066] in:

[0067]

[0068]

[0069] The reflection coefficient, reflectivity and transmittance of a single-layer film are:

[0070]

[0071]

[0072]

[0073] According to formula (20), we get:

[0074]

[0075] Substituting into equation (25), the relationship between the transmittance, refractive index and thickness of a single-layer film is obtained as follows:

[0076]

[0077] in:

[0078]

[0079]

[0080] Furthermore, the construction of the multi-layer uniform dielectric thin film transmission model in step 2 includes:

[0081] Based on the transmission model of a single-layer uniform dielectric film, a transmission model of a multi-layer uniform dielectric film is established. The meanings of the relevant parameters of the multi-layer film transmission model are as follows: i d i (i=0, 1, 2, ..., K+1) are the refractive index and film thickness of the i-th film respectively; (E i，i , H i，i) is the total amplitude of the tangential components of the transmitted and reflected electric and magnetic fields at the bottom of the i-th interface, (E i，i+1 , H i,i+1 ) is the total amplitude of the tangential components of the electric and magnetic fields transmitted and reflected on the upper side of the i-th interface i+1; θ i is the transmission angle of the i-th interface, and n K+1 =n G According to the matrix equation of a single-layer dielectric film, the boundary conditions are applied at interface 1 and interface 2, and we get:

[0082]

[0083] Similarly, applying boundary conditions at interfaces 2 and 3, we get:

[0084]

[0085] Applying boundary conditions at interfaces K and K+1, we obtain:

[0086]

[0087] Since the tangential component of the interface is continuous, we have:

[0088]

[0089] Using the conditional expression, we get the transfer matrix equation:

[0090]

[0091] have to:

[0092]

[0093] Then formula (31) can be rewritten as:

[0094]

[0095] According to the principle of transfer matrix method, each layer of film material has a unique characteristic matrix determined by thickness. When the thickness of the composite material increases, the characteristic matrix of the composite material is the product of the characteristic matrices of each layer of material. The combined characteristic vector of the multilayer film is:

[0096]

[0097] Where:

[0098]

[0099]

[0100] The transmission angle of the i-th layer is determined by Snell's Law:

[0101] n0sinθ0=n i sinθ i =n G sinθ G (i=1,2,…,K) (39 )

[0102] The reflection coefficient of the multi-layer film is calculated as:

[0103]

[0104] The reflectivity and transmittance are:

[0105]

[0106]

[0107] Analyze and solve two layers of uniform dielectric films, and the corresponding combined eigenvector is:

[0108]

[0109] Then we get:

[0110]

[0111] The combined equations (36), (37), (42) and (44) provide a double-layer uniform dielectric film transmission model, and the relationship between the transmittance, refractive index and thickness of the double-layer film is obtained. The composite structure data formed by 50nm silicon dioxide and 50nm tungsten is introduced into the double-layer uniform dielectric film transmission model to obtain the emission spectrum of the composite structure in the range of 0.3 to 5 microns.

[0112] Furthermore, the relationship between the film transmittance and thickness and the relationship between the film transmittance and refractive index in the two cases of with and without the absorbing medium in step 2 include:

[0113] (1) In the absence of an absorbing medium, the thickness difference λ o / 2N1cosθ1 integer multiple dielectric films have equal transmittance; and at vertical incidence, when the thickness of the film is λ o When it is an odd multiple of / 4, the transmittance reaches its extreme value;

[0114] (2) In the absence of an absorbing medium, within a certain range, the transmittance of the film is positively correlated with the thickness. After reaching the peak value, if the thickness is increased, the transmittance of the film will decay;

[0115] (3) In the absence of an absorbing medium, the transmittance and refractive index of the film have periodic fluctuations that tend to decay overall;

[0116] (4) In the presence of an absorbing medium, the transmittance of the film decreases rapidly as the refractive index increases and eventually approaches 0.

[0117] Furthermore, the construction of the broadband filter plus short-wave pass filter model in step 3 includes:

[0118] The spectral characteristics of the Fabry-Perot filter are analyzed using the separation equivalent interface method. When the film thickness is d, the transmittance is expressed as:

[0119]

[0120] Simplified to:

[0121]

[0122] in:

[0123]

[0124] When F sin 2 θ=0, When T is the largest, T max =T0, and when R1 = R2, T max =T0=1; the ideal material's dielectric reflection layer is Germanium (Ge) and the spacer layer is silica (SiO2).

[0125] Another object of the present invention is to provide a thermophotovoltaic radiator system for implementing the control method of the thermophotovoltaic radiator system, the thermophotovoltaic radiator system comprising:

[0126] Transmission model building module, used to establish a single-layer uniform dielectric film transmission model based on the wave equation and Maxwell equations, and to establish a multi-layer uniform dielectric film transmission model in combination with the transfer matrix method;

[0127] A transmittance relationship determination module is used to obtain the relationship between the transmittance of the film and the thickness and the relationship between the transmittance of the film and the refractive index in the presence and absence of an absorbing medium;

[0128] A pass filter model building module is used to add a short-wave pass filter to the bottom of a broadband filter to filter out long waves and build a broadband filter plus short-wave pass filter model;

[0129] The filter structure design module is used to design a new filter structure that is superior to the single-cavity filter.

[0130] Another object of the present invention is to provide a computer device, the computer device comprising a memory and a processor, the memory storing a computer program, and when the computer program is executed by the processor, the processor performs the following steps:

[0131] Determine the emission spectrum of the selective thermophotovoltaic radiator under ideal conditions; construct a single-layer uniform dielectric film transmission model and a multi-layer uniform dielectric film transmission model respectively to clarify the working mechanism of the thermal radiator; construct a broadband filter plus shortwave pass filter model to realize the design of the thermophotovoltaic radiator system.

[0132] Another object of the present invention is to provide a computer-readable storage medium storing a computer program, wherein when the computer program is executed by a processor, the processor executes the following steps:

[0133] Determine the emission spectrum of the selective thermophotovoltaic radiator under ideal conditions; construct a single-layer uniform dielectric film transmission model and a multi-layer uniform dielectric film transmission model respectively to clarify the working mechanism of the thermal radiator; construct a broadband filter plus shortwave pass filter model to realize the design of the thermophotovoltaic radiator system.

[0134] Another object of the present invention is to provide an information data processing terminal, which is used to implement the thermal photovoltaic radiator system.

[0135] In combination with the above technical solutions and the technical problems solved, please analyze the advantages and positive effects of the technical solutions to be protected by the present invention from the following aspects:

[0136] First, in view of the technical problems existing in the above-mentioned prior art and the difficulty of solving the problems, the technical solutions to be protected by the present invention and the results and data in the research and development process are closely combined to analyze in detail and deeply how the technical solutions of the present invention solve the technical problems, and some creative technical effects brought about after solving the problems. The specific description is as follows: In order to enhance the spectral control ability of the thermal radiator, the present invention designs it as a narrow-band emission, that is, the photons emitted by the thermal radiator are concentrated in a very small band, so as to design an efficient thermal radiator to improve the thermoelectric conversion efficiency of the thermal photovoltaic system.

[0137] The present invention establishes a single-layer uniform dielectric film transmission model based on the wave equation and Maxwell equations. On this basis, combined with the transfer matrix method, a multi-layer uniform dielectric film transmission model is established, and the relationship between the film transmittance and thickness and the relationship between the film transmittance and the refractive index in the presence and absence of an absorbing medium are summarized. In addition, in order to improve the thermoelectric conversion efficiency of the thermophotovoltaic radiator, the present invention adds a short-wave filter at the bottom of the broadband filter to filter out long waves, establishes a broadband filter plus a short-wave filter model, and then designs a new filter structure that is superior to a single-cavity filter.

[0138] The present invention deduces four relationships between the transmittance of the film and its thickness, and between the transmittance and the refractive index in the presence and absence of an absorbing medium:

[0139] (1) In the absence of an absorbing medium, the thickness difference λ o / 2N1cosθ1 integer multiples of those dielectric films, the transmittance is equal. And at vertical incidence, when the thickness of the film is λ o When it is an odd multiple of / 4, its transmittance reaches its extreme value.

[0140] (2) In the absence of an absorbing medium, within a certain range, the transmittance of the film is positively correlated with its thickness. After reaching the peak value, if the thickness is further increased, the transmittance of the film will decay.

[0141] (3) In the absence of an absorbing medium, the transmittance of the film and its refractive index have periodic fluctuations that tend to decay overall.

[0142] (4) In the presence of an absorbing medium, the transmittance of the film decreases rapidly as its refractive index increases and eventually approaches 0.

[0143] In addition, the present invention establishes a single-cavity filter model. The multilayer uniform dielectric thermal radiator designed based on the model has a relative intensity (transmittance) of 0.99 at a wavelength of 1.499 μm, which meets the ideal emission spectrum with sharp and high thermal emission conditions at 1.5 microns, reflecting the advantages of the model.

[0144] Second, considering the technical solution as a whole or from the perspective of the product, the technical effects and advantages of the technical solution to be protected by the present invention are described in detail as follows:

[0145] Through experimental simulation, the structure of the present invention has a transmittance of 99% at a wavelength of 1.499 microns, which basically meets the ideal emission spectrum with sharp and high thermal emission conditions at 1.5 microns. The design results of the present invention verify the good effect of the transfer matrix method in the field of calculating emission spectra, provide the possibility for designing material structures for specific applications, and further enhance the practicality of material informatics in the field of heat and mass transfer.

[0146] Third, as auxiliary evidence of the inventiveness of the claims of the present invention, whether the technical solution of the present invention solves the technical problems that people have been eager to solve but have never been able to solve successfully:

[0147] At present, the research of thermophotovoltaic technology is a hot topic. Famous photovoltaic research institutions and universities in the United States, Russia, Germany, Australia, the United Kingdom, Switzerland and Japan are actively conducting research on thermophotovoltaic systems, trying to put this new technology into practical use through basic research. The filter structure designed in this paper can achieve a transmittance of 99% at a wavelength of 1.499μm, which basically meets the conditions of sharp and high thermal emission at 1.5μm for the ideal emission spectrum. BRIEF DESCRIPTION OF THE DRAWINGS

[0148] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments of the present invention. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0149] Figure 1 is a schematic diagram of the emissivity of an ideal thermal radiator provided by an embodiment of the present invention;

[0150] Figure 2 It is a schematic diagram of reflection and transmission generated by a light incident thin film provided by an embodiment of the present invention;

[0151] Figure 3 is a schematic diagram of the propagation of a plane cosine wave in a thin film without an absorbing medium provided by an embodiment of the present invention;

[0152] Figure 4 is a graph showing the relationship between the transmittance and thickness of a non-absorbing medium film provided by an embodiment of the present invention;

[0153] Figure 5 is a graph showing the relationship between the transmittance and thickness of the absorbing medium film provided by an embodiment of the present invention;

[0154] Figure 6 is a graph showing the relationship between the transmittance and the refractive index of a non-absorbing medium film provided by an embodiment of the present invention;

[0155] Figure 7 is a graph showing the relationship between the transmittance and the refractive index of the absorbing medium film provided by an embodiment of the present invention;

[0156] Figure 8 It is a schematic diagram of the emission spectrum of 50 nanometer thick tungsten in the range of 0.3 to 5 micrometers provided by an embodiment of the present invention;

[0157] Fig. 9 It is a schematic diagram of a transmission model of a multi-layer uniform dielectric film provided by an embodiment of the present invention;

[0158] Fig.10 It is an emission spectrum diagram of the composite structure provided by an embodiment of the present invention in the range of 0.3 to 5 microns;

[0159] Fig.11 is a structural diagram of a single-cavity filter provided by an embodiment of the present invention;

[0160] Fig.12 It is a schematic diagram of superimposed transmission of two transmitted lights with different central wavelengths provided by an embodiment of the present invention;

[0161] Fig.13It is a schematic diagram of a broadband filter plus a short-wave pass filter model provided by an embodiment of the present invention;

[0162] Fig.14 is a graph showing the relationship between the transmittance and the thickness of the reflective layer and the spacer layer provided by an embodiment of the present invention;

[0163] Fig.15 is a design structure diagram of a multi-layer heat emitter provided in an embodiment of the present invention;

[0164] Fig.16 It is an emission spectrum diagram of a single cavity filter model provided by an embodiment of the present invention in a wavelength range of 0.3 to 5 microns;

[0165] Fig.17 is a flow chart of a control method of a thermal photovoltaic radiator system provided by an embodiment of the present invention;

[0166] Fig.18 is a structural block diagram of a thermal photovoltaic radiator system provided by an embodiment of the present invention;

[0167] In the figure: 1. Transmission model building module; 2. Transmittance relationship determination module; 3. Pass filter model building module; 4. Filter structure design module. DETAILED DESCRIPTION

[0168] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0169] In view of the problems existing in the prior art, the present invention provides a thermal photovoltaic radiator system, a control method, a medium, a device and a terminal. The present invention is described in detail below with reference to the accompanying drawings.

[0170] 1. Explanatory Examples In order to enable those skilled in the art to fully understand how to implement the present invention, this section provides an illustrative example that expands and describes the technical solution of the claims.

[0171] like Fig.17 As shown, the control method of the thermal photovoltaic radiator system provided by the embodiment of the present invention includes the following steps:

[0172] S101, establish a single-layer uniform dielectric film transmission model based on the wave equation and Maxwell equations;

[0173] S102, combining the transfer matrix method to establish a multi-layer uniform dielectric thin film transmission model, and obtain the relationship between the thin film transmittance and thickness and the relationship between the thin film transmittance and refractive index in two cases with and without an absorbing medium;

[0174] S103, adding a short-wave pass filter to the bottom of the broadband filter to filter out long waves, establishing a broadband filter plus short-wave pass filter model, and designing a new filter structure that is superior to the single-cavity filter.

[0175] like Fig.18 As shown, the thermal photovoltaic radiator system provided by the embodiment of the present invention includes:

[0176] Transmission model building module 1, used to establish a single-layer uniform dielectric film transmission model based on the wave equation and Maxwell equations, and to establish a multi-layer uniform dielectric film transmission model in combination with the transfer matrix method;

[0177] Transmittance relationship determination module 2, used to obtain the relationship between the film transmittance and thickness and the relationship between the film transmittance and refractive index in two cases with and without an absorbing medium;

[0178] The pass filter model building module 3 is used to add a short-wave pass filter at the bottom of the broadband filter to filter out long waves and establish a broadband filter plus short-wave pass filter model;

[0179] The filter structure design module 4 is used to design a new filter structure that is superior to the single-cavity filter.

[0180] The technical solution of the present invention is further described below in conjunction with specific embodiments.

[0181] 1. Methods

[0182] To design a thermophotovoltaic radiator, we first need to determine the emission spectrum of the selective thermophotovoltaic radiator under ideal conditions. Gallium antimonide thermophotovoltaic cells are currently commonly used photovoltaic cells with high photoelectric conversion efficiency. The external quantum efficiency of this cell at 300K is as follows: Figure 1 As shown by the dotted line in the figure, its band gap energy is 0.726eV. According to λpv=hc / Epv, its band gap wavelength is 1.708μm. Considering the external quantum efficiency curve of photovoltaic cells and Planck's blackbody radiation law, the emissivity of an ideal selective thermal photovoltaic radiator should be as follows: Figure 1 As shown by the solid line in .

[0183] In order to clarify the working mechanism of the thermal radiator, the present invention establishes a single-layer uniform dielectric film transmission model and a multi-layer uniform dielectric film transmission model.

[0184] 1.1 Transmission model of single-layer homogeneous dielectric film

[0185] 1.1.1 Optical path difference

[0186] like Figure 2As shown, 1 and 2 represent the upper and lower interfaces of the film. Monochromatic light (unit radiation) emitted from a point on a distant light source is incident on the film. A part of it is reflected on interface 1 (reflected light with amplitude r1), and the other part passes through interface 1, is reflected on interface 2, and then is emitted through interface 1 (reflected light with amplitude r2). It is easy to know that when interface 1 and interface 2 are parallel to each other, the reflected light r1 and r2 are also parallel to each other. Therefore, the place where they meet and interfere is at infinity.

[0187] The interference intensity of light rays r1 and r2 depends on the optical path difference between them. If CD is perpendicular to light ray r1, the optical path difference between r1 and r2 is:

[0188] Δ=n1(AB+BC)-n0AD (1)

[0189] Depend on Figure 1 It is easy to know that the geometric relationship is as follows:

[0190]

[0191] In addition, according to the law of refraction, the refractive index relationship between the layers of film is as follows:

[0192] n o sinθ o =n1sinθ1 (3)

[0193] Combining the above three formulas, the relationship between the optical path difference and the refractive index and thickness of the film is as follows:

[0194] Δ=2n1d1cosθ1 (4)

[0195] 1.1.2 Wave equation

[0196] A plane cosine wave propagates in a non-absorbing homogeneous medium, such as Figure 3 As shown. It propagates along the positive direction of the x-axis with a wave speed of v. Assume that the vibration equation at the origin 0 is known to be:

[0197] y o =A cosωt (5)

[0198] Where A is the amplitude and ω is the circular frequency T and v are the period and frequency respectively, y0 is the displacement of the vibration point from the equilibrium position at time zero. Point P is any point on the wave line, and the distance from point 0 is x. When the vibration propagates from point 0 to point P, point P will repeat the vibration of point 0, but it will lag behind in phase. Because the vibration needs time to propagate from point 0 to point P. So when point 0 vibrates for t time, point P only vibrates That is, the displacement of point P at time t is equal to the displacement of point 0 at The displacement of point P at time t is:

[0199]

[0200] Combining formula (4), the phase difference δ can be obtained as:

[0201]

[0202] 1.1.3 Maxwell's equations

[0203] The main factors affecting the emission spectrum of thermal emitters are the optical properties (refractive index or dielectric constant) and structural properties (thickness) of the material. Analyzing the optical properties of thin film systems, from a theoretical point of view, is to analyze the propagation of plane electromagnetic waves through layered media. Therefore, the most effective way to deal with thin film problems is to solve Maxwell's equations. For isotropic media, Maxwell's equations can be expressed as:

[0204]

[0205] Where E is the electric field intensity vector, H is the magnetic field intensity vector, D is the electric displacement vector, B is the magnetic induction intensity vector, j is the current density vector, and j D is the displacement current vector ρ is the charge density.

[0206] It is known that the boundary conditions for the continuity of the electric field and magnetic field tangent vectors on both sides of the interface are:

[0207]

[0208] Substituting into Maxwell's equations, we get:

[0209]

[0210] The characteristic matrix of the dielectric layer or film contains all the physical parameters reflecting the properties of the dielectric, as shown in equation (11), where ζ1 is the admittance.

[0211]

[0212]

[0213] Since the light is incident vertically, θ1 = 0°, so the admittance of the S wave and the P wave is n1.

[0214] This allows the column vector It is called the combined characteristic vector of the transmission medium (i.e., substrate) and the film layer.

[0215] because:

[0216]

[0217] Solving B and C from equation (10), we get:

[0218]

[0219] Substituting the unified reflection coefficient formula of S-wave polarization and P-wave polarization into the formula, we get:

[0220]

[0221] In the above formula, ζ o represents the optical effective admittance in the incident medium on the upper side of the interface, and the corresponding incident angle in the incident medium is θ o ; Y represents the combined admittance in the transmission medium below the interface.

[0222] The reflection coefficient of a single-layer dielectric film can be obtained as:

[0223]

[0224] The reflectivity is as follows for both S-wave polarization and P-wave polarization:

[0225]

[0226] Then the transmittance of S-wave polarization and P-wave polarization is obtained as follows:

[0227]

[0228] The above discussion is for non-absorbing media. For the case where a single-layer plane medium is an absorbing layer, the calculation of the interface reflection coefficient only requires changing the refractive index n to the complex refractive index The effective admittance ζ is changed to complex effective admittance Its expression is:

[0229]

[0230] The eigenvector of a single-layer film is:

[0231]

[0232] in:

[0233]

[0234]

[0235] The reflection coefficient, reflectivity and transmittance of a single-layer film are:

[0236]

[0237]

[0238]

[0239] According to formula (20), we can get:

[0240]

[0241] Substituting into equation (25), the relationship between the transmittance of a single-layer film and its refractive index and thickness can be obtained (i.e., the relationship between the emission spectrum of a single-layer film and its refractive index and thickness):

[0242]

[0243] in:

[0244]

[0245]

[0246] The light generated by the thermal emitter is incident vertically on the film, and the energy of the light will be reflected and transmitted by the film and absorbed by the material. Assuming the incident wavelength λ is 4 microns, n0=1, n1=1.5, and the film thickness d is used as the independent variable, the step size is 0.1, and the value range is [0, 4], the relationship between the transmittance and the film thickness under the ideal state (no absorbing medium) is obtained, as shown in Figure 4 shown.

[0247] observe Figure 4 It can be seen that in the absence of an absorbing medium, the film transmittance varies periodically with its thickness, and the thickness difference λ o The transmittance of films with integer multiples of / 2N1cosθ1 is equal, and under vertical incidence, the transmittance of the film is taken at its thickness λ o It reaches its extreme value when it is an odd multiple of / 4.

[0248] When the film is an absorbing medium, the refractive index is converted into a complex refractive index, and the relationship between the transmittance and the film thickness is as follows: Figure 5 shown.

[0249] from Figure 5 It can be seen that in the presence of an absorbing medium, within a certain range, the transmittance of the film increases with the increase of its thickness. After reaching the peak value, if the thickness is further increased, the transmittance will decrease.

[0250] Assuming the incident wavelength λ = 4 μm, n0 = 1, d = 50 nm, and taking the refractive index n1 as the independent variable, the step size is 0.1, and the value range is [2, 20], the relationship between the transmittance and the refractive index under the ideal state (no absorbing medium) is obtained, as shown in Figure 6 shown.

[0251] from Figure 6It can be seen that in the absence of an absorbing medium, the transmittance of the film and its refractive index generally show a decay trend, and there is a fluctuation relationship similar to a periodic change.

[0252] When the film is an absorbing medium, the relationship between transmittance and refractive index is as follows: Figure 7 shown.

[0253] from Figure 7 It can be seen that in the presence of an absorbing medium, the transmittance of the film decreases rapidly as its refractive index increases, and eventually approaches 0.

[0254] The thickness of tungsten and the refractive index corresponding to the incident wavelength are brought into the model to calculate the emission spectrum of 50 nanometer thick tungsten in the range of 0.3 to 5 micrometers, as shown in Figure 8 The relative intensity on the vertical axis is represented by the transmittance, and the horizontal axis is the wavelength.

[0255] 1.2 Multilayer uniform dielectric thin film transmission model

[0256] Based on the transmission model of a single-layer uniform dielectric film, a transmission model of a multi-layer uniform dielectric film is established. Its principle diagram is shown in the figure. Fig. 9 shown.

[0257] Fig. 9 The relevant parameters of the multilayer thin film transmission model are shown. The specific meanings are as follows: n i d i (i=0, 1, 2, ..., K+1) are the refractive index and film thickness of the i-th film respectively; (E i，i , H i，i ) is the total amplitude of the tangential components of the transmitted and reflected electric and magnetic fields at the bottom of the i-th interface, (E i，i+1 , H i，i+1 ) is the total amplitude of the tangential components of the electric and magnetic fields transmitted and reflected on the upper side of the i-th interface i+1; θ i is the transmission angle of the i-th interface, and n K+1 =n G According to the matrix equation of a single-layer dielectric film, applying boundary conditions (9) at interfaces 1 and 2, we can obtain:

[0258]

[0259] Similarly, applying boundary conditions at interfaces 2 and 3, we get:

[0260]

[0261] Applying boundary conditions at interfaces K and K+1, we obtain:

[0262]

[0263] Since the tangential component of the interface is continuous, we have:

[0264]

[0265] Using the above conditional formula, we can get the transfer matrix equation:

[0266]

[0267] Further we can get:

[0268]

[0269] Then formula (31) can be rewritten as:

[0270]

[0271] According to the principle of transfer matrix method, each layer of thin film material has a unique characteristic matrix determined by its thickness. When the thickness of the composite material increases, the characteristic matrix of the composite material is the product of the characteristic matrices of each layer of material. Therefore, the combined characteristic vector of the multilayer film is:

[0272]

[0273] In the above formula:

[0274]

[0275]

[0276] The transmission angle of the i-th layer is determined by Snell's Law, that is:

[0277] n0sinθ0=n i sinθ i =n G sinθ G (i=1,2,…,K) (39)

[0278] In summary, the reflection coefficient of the multi-layer film can be calculated as:

[0279]

[0280] The reflectivity and transmittance are:

[0281]

[0282]

[0283] Analyze and solve two layers of uniform dielectric films. The corresponding combined eigenvector is:

[0284]

[0285] Then we can get:

[0286]

[0287] By combining equations (36), (37), (42), and (44), we can get the transmission model of a double-layer uniform dielectric film. We can get the relationship between the transmittance, refractive index, and thickness of the double-layer film. By substituting the composite structure data formed by silicon dioxide (50nm) and tungsten (50nm) into the transmission model of a double-layer uniform dielectric film, we can get the emission spectrum of the composite structure in the range of 0.3 to 5 microns, as shown in Fig.10 The relative intensity on the vertical axis is represented by the transmittance, and the horizontal axis is the wavelength.

[0288] Compared with the transmission model of a single-layer tungsten, the spectrum of the double-layer transmission model has three peaks after adding a silicon dioxide layer, and the second highest peak value is significantly lower than the first highest peak value.

[0289] 1.3 Broadband filter plus shortwave filter model

[0290] Replacing the metal reflective film with a fully dielectric reflective film will result in a fully dielectric interference filter. The basic structure of a single-cavity fully dielectric filter is: a spacer layer is added between two dielectric reflective layers. The dielectric reflective layers are made of materials with high and low refractive indices arranged alternately. The intermediate spacer layer is a high refractive index material or a low refractive index material. The main function of the filter is to achieve spectral segmentation within a certain spectral region, so that the light beam is divided into several channels and the required band is obtained in the spectrum.

[0291] A simple Fabry-Perot filter consists of two reflectors and an intermediate transition layer (such as Fig.11 The most basic form of narrowband filter is FP cavity, which consists of two reflective layers with a spacer layer in the middle. The full dielectric reflective layer consists of a series of 1 / 4 wavelength layers, and the thickness of the spacer layer is an integer multiple of half the reference wavelength.

[0292] The basic idea of ​​the Smith method is to use the separation equivalent interface method to analyze the spectral characteristics of the Fabry-Perot filter. Assume that the film thickness is d. Its transmittance can be expressed as:

[0293]

[0294] It can be simplified to:

[0295]

[0296] in:

[0297]

[0298] From formula (46), it can be concluded that when F sin 2 θ=0, When T is the largest, T max =T0, and when R1 = R2, T max =T0=1.

[0299] In summary, it can be concluded that in order to obtain a filter with high pass transmittance and deep background suppression, the reflectivity of the two reflective surfaces should be as high as possible and R1=R2.

[0300] On the basis of the single cavity filter, by stringing together narrowband filters with different central wavelengths, a broadband filter with an increased peak transmittance wavelength range is formed. The effect of the increased peak transmittance wavelength range is as follows: Fig.12 shown.

[0301] At the same time, a short-wave filter is added to the bottom of the broadband filter to filter out long waves, and a broadband filter plus short-wave filter model is established, so that the transmittance of the wavelength λ in [0, 1.71] is maximized everywhere, thereby achieving the highest thermoelectric conversion efficiency. The model schematic is shown in Fig.13 shown.

[0302] The real part of the refractive index of the dielectric reflective layer is as long as possible, and the imaginary part is less than 0.1, which is the material required by the present invention; for the spacing layer, the present invention needs to find a material that makes The material closest to 0. According to the refractive index data of common materials at 1.5 μm, the ideal material found by the present invention is: the dielectric reflection layer is Germanium (Ge), and the spacer layer is silica (SiO2).

[0303] 2. Conclusion

[0304] The present invention deduces four relationships between the transmittance of the film and its thickness, and between the transmittance and the refractive index in the presence and absence of an absorbing medium:

[0305] (1) In the absence of an absorbing medium, the thickness difference λ o / 2N1cosθ1 integer multiples of those dielectric films, the transmittance is equal. And at vertical incidence, when the thickness of the film is λ o When it is an odd multiple of / 4, its transmittance reaches its extreme value.

[0306] (2) In the absence of an absorbing medium, within a certain range, the transmittance of the film is positively correlated with its thickness. After reaching the peak value, if the thickness is further increased, the transmittance of the film will decay.

[0307] (3) In the absence of an absorbing medium, the transmittance of the film and its refractive index have periodic fluctuations that tend to decay overall.

[0308] (4) In the presence of an absorbing medium, the transmittance of the film decreases rapidly as its refractive index increases and eventually approaches 0.

[0309] In addition, the present invention establishes a single-cavity filter model. The multilayer uniform dielectric thermal radiator designed based on the model has a relative intensity (transmittance) of 0.99 at a wavelength of 1.499 μm, which meets the ideal emission spectrum with sharp and high thermal emission conditions at 1.5 microns, reflecting the advantages of the model. The design results of the present invention verify the good effect of the transfer matrix method in the field of calculating emission spectra, provide the possibility for designing material structures for specific applications, and further enhance the practicality of material informatics in the field of heat and mass transfer.

[0310] 2. Evidence of the effects of the embodiments The embodiments of the present invention have achieved some positive effects during the development or use process, and indeed have great advantages over the prior art. The following content is described in conjunction with the data, charts, etc. of the test process.

[0311] The simulation experiment provided by the embodiment of the present invention is as follows:

[0312] The peak incident value λ = 1.5 μm, assuming that d1 is the thickness of the dielectric reflective layer Germanium (Ge), and d2 is the thickness of the spacer layer silica (SiO2). Inside, with As the step length, exhaustively search for the value that makes the transmittance of the filter the largest and the total thickness of the multilayer structure thermal emitter the thinnest. Use MATLAB software to perform simulation experiments and obtain the following Fig.14 The relationship diagram shown.

[0313] The grid search results show that d1 = 540nm, d2 = 405nm. Therefore, the design structure of the thermal emitter is as follows: Fig.15 shown.

[0314] Then, d1 = 540 nm, d2 = 405 nm are introduced into the single-cavity filter model to find the emission spectrum with a wavelength range of 0.3 to 5 μm, as shown in Fig.16 shown.

[0315] from Fig.16 It can be seen that when the wavelength is 1.499μm, the relative intensity (transmittance) reaches 0.99, which meets the ideal emission spectrum with sharp and high thermal emission conditions at 1.5 microns.

[0316] It should be noted that the embodiments of the present invention can be implemented by hardware, software, or a combination of software and hardware. The hardware part can be implemented using dedicated logic; the software part can be stored in a memory and executed by an appropriate instruction execution system, such as a microprocessor or dedicated design hardware. It can be understood by a person of ordinary skill in the art that the above-mentioned devices and methods can be implemented using computer executable instructions and / or contained in a processor control code, such as a carrier medium such as a disk, CD or DVD-ROM, a programmable memory such as a read-only memory (firmware), or a data carrier such as an optical or electronic signal carrier. Such code is provided on the carrier medium. The device and its modules of the present invention can be implemented by hardware circuits such as very large-scale integrated circuits or gate arrays, semiconductors such as logic chips, transistors, etc., or programmable hardware devices such as field programmable gate arrays, programmable logic devices, etc., can also be implemented by software executed by various types of processors, and can also be implemented by a combination of the above-mentioned hardware circuits and software, such as firmware.

[0317] The above description is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Any modifications, equivalent substitutions and improvements made by any technician familiar with the technical field within the technical scope disclosed by the present invention and within the spirit and principle of the present invention should be covered by the protection scope of the present invention.

Claims

1. A control method for a thermal photovoltaic radiator system, characterized in that: The control method of the thermal photovoltaic radiator system comprises: Determine the emission spectrum of the selective thermophotovoltaic radiator under ideal conditions; construct a single-layer uniform dielectric film transmission model and a multi-layer uniform dielectric film transmission model respectively to clarify the working mechanism of the thermophotovoltaic radiator; construct a broadband filter plus short-wave filter model to realize the design of the thermophotovoltaic radiator system; The control method of the thermal photovoltaic radiator system comprises the following steps: Step 1: Establish a single-layer uniform dielectric film transmission model based on the wave equation and Maxwell equations; Step 2: Combined with the transfer matrix method, a multi-layer uniform dielectric film transmission model is established to obtain the relationship between the film transmittance and thickness and the relationship between the film transmittance and refractive index in the presence and absence of absorbing media; Step 3, adding a short-wave pass filter to the bottom of the broadband filter to filter out long waves, establishing a broadband filter plus short-wave pass filter model, and designing a new filter structure that is superior to the single-cavity filter; The construction of the single-layer uniform dielectric thin film transmission model in step 1 includes: (1) Optical path difference When 1 and 2 represent the upper and lower interfaces of the film, a unit of monochromatic light emitted from a point on a distant light source is incident on the film, part of which is reflected on interface 1, and the amplitude of the reflected light is r1; the other part passes through interface 1, is reflected on interface 2, and then passes through interface 1 to emit, and the amplitude of the reflected light is r2; when interface 1 and interface 2 are parallel to each other, the reflected light r1 and r2 are parallel to each other, meet and produce interference at infinity; The interference intensity of light rays r1 and r2 depends on their optical path difference; if CD is perpendicular to light ray r1, the optical path difference between r1 and r2 is: Δ=n1(AB+BC)-n0AD (1) The geometric relationship is as follows: According to the law of refraction, the relationship between the refractive index of each layer of film is as follows: n o sinθ o =n1sinθ1 (3) Combining equations (1), (2), and (3), we can obtain the following relationship between the optical path difference and the refractive index and thickness of the film: Δ=2n1d1cosθ1 (4) (2) Wave equation A plane cosine wave propagates in a non-absorbing homogeneous medium, propagating along the positive direction of the x-axis with a wave speed of v; suppose the vibration equation at the origin 0 is known to be: and o =Acosωt (5) Where A is the amplitude and ω is the circular frequency T and v are the period and frequency respectively; y0 is the displacement of the vibration point from the equilibrium position at time zero; point P is any point on the wave line, and the distance from point 0 is x; when the vibration propagates from point 0 to point P, point P will repeat the vibration of point 0; the vibration needs When point 0 vibrates for t time, point P only vibrates The displacement of point P at time t is equal to the displacement of point 0 at The displacement of point P at time t is: Combining formula (4), the phase difference δ is: (3) Maxwell equations For an isotropic medium, Maxwell's equations are expressed as: Where E is the electric field intensity vector, H is the magnetic field intensity vector, D is the electric displacement vector, B is the magnetic induction intensity vector, j is the current density vector, and j D is the displacement current vector ρ is the charge density; It is known that the boundary conditions for the continuity of the electric field and magnetic field tangent vectors on both sides of the interface are: Substituting Maxwell style, we get: The characteristic matrix of the dielectric layer or film contains all the physical parameters that reflect the properties of the dielectric, as shown in equation (11), where ζ1 is the admittance; Since the light is incident vertically, θ1 = 0°, so the admittance of both S and P waves is n1; The column vector [B, C] T , is called the combined eigenvector of the transmission medium and the film layer; because: Solving B and C from equation (10), we get: Substituting the unified reflection coefficient formula of S-wave polarization and P-wave polarization into the formula, we get: In the formula, ζ o represents the optical effective admittance in the incident medium on the upper side of the interface, and the corresponding incident angle in the incident medium is θ o ; Y represents the combined admittance in the transmission medium below the interface; The reflection coefficient of the single-layer dielectric film is obtained as: The reflectivity is as follows for both S-wave polarization and P-wave polarization: The transmittance of S-wave polarization and P-wave polarization is obtained as: For the case where a single-layer plane medium is an absorbing layer, the calculation of the interface reflection coefficient only requires the refractive index n Change to complex refractive index The effective admittance ζ is changed to complex effective admittance The expression is: The eigenvector of a single-layer film is: in: The reflection coefficient, reflectivity and transmittance of a single-layer film are: According to formula (20), we get: Substituting into equation (25), the relationship between the transmittance, refractive index and thickness of a single-layer film is obtained as follows: in:

2. The control method of the thermophotovoltaic radiator system according to claim 1, characterized in that: The construction of the multi-layer uniform dielectric thin film transmission model in step 2 includes: Based on the transmission model of a single-layer uniform dielectric film, a transmission model of a multi-layer uniform dielectric film is established. The meanings of the relevant parameters of the multi-layer film transmission model are as follows: i ,d i (i=0, 1, 2, ..., K+1) are the refractive index and film thickness of the i-th film respectively; (E i，i , H i，i ) is the total amplitude of the tangential components of the transmitted and reflected electric and magnetic fields at the bottom of the i-th interface, (E i，i+1 , H i，i+1 ) is the total amplitude of the tangential components of the electric and magnetic fields transmitted and reflected on the upper side of the i-th interface i+1; θ i is the transmission angle of the i-th interface, and n K+1 =n G ; According to the matrix equation of a single-layer dielectric film, the boundary conditions are applied at interfaces 1 and 2, and we get: Similarly, applying boundary conditions at interfaces 2 and 3, we get: Applying boundary conditions at interfaces K and K+1, we obtain: Since the tangential component of the interface is continuous, we have: Using the conditional expression, we get the transfer matrix equation: have to: Then formula (31) can be rewritten as: According to the principle of transfer matrix method, each layer of film material has a unique characteristic matrix determined by thickness. When the thickness of the composite material increases, the characteristic matrix of the composite material is the product of the characteristic matrices of each layer of material. The combined characteristic vector of the multilayer film is: Where: The transmission angle of the i-th layer is determined by Snell's Law: n0sinθ0=n i sinθ i =n G sinθ G (i=1,2,…,K) (39) The reflection coefficient of the multi-layer film is calculated as: The reflectivity and transmittance are: Analyze and solve two layers of uniform dielectric films, and the corresponding combined eigenvector is: Then we get: The combined equations (36), (37), (42) and (44) provide a double-layer uniform dielectric film transmission model, and the relationship between the transmittance, refractive index and thickness of the double-layer film is obtained; the composite structure data formed by 50nm of silicon dioxide and 50nm of tungsten is substituted into the double-layer uniform dielectric film transmission model to obtain the emission spectrum of the composite structure in the range of 0.3 to 5 microns.

3. The control method of the thermophotovoltaic radiator system according to claim 1, characterized in that: The relationship between the film transmittance and thickness and the relationship between the film transmittance and refractive index in the two cases of with and without the absorbing medium in step 2 include: (1) In the absence of an absorbing medium, the transmittance of dielectric films with thickness differences of integer multiples of λ0 / 2N1cosθ1 is equal; and at vertical incidence, when the thickness of the film is λ o When it is an odd multiple of / 4, the transmittance reaches its extreme value; (2) In the absence of an absorbing medium, within a certain range, the transmittance of the film is positively correlated with the thickness. After reaching the peak value, if the thickness is increased, the transmittance of the film will decay; (3) In the absence of an absorbing medium, the transmittance and refractive index of the film have periodic fluctuations that tend to decay overall; (4) In the presence of an absorbing medium, the transmittance of the film decreases rapidly as the refractive index increases and eventually approaches 0.

4. The control method of the thermophotovoltaic radiator system according to claim 1, characterized in that: The construction of the broadband filter plus short-wave pass filter model in step 3 includes: The spectral characteristics of the Fabry-Perot filter are analyzed using the separation equivalent interface method. When the film thickness is d, the transmittance is expressed as: Simplified to: in: When F sin 2 θ=0, When T is the largest, T max =T0, and when R1 = R2, T max =T0=1; the dielectric reflection layer of the ideal material is Germanium and the spacer layer is silica.

5. A thermophotovoltaic radiator system implementing the control method of the thermophotovoltaic radiator system according to any one of claims 1 to 4, characterized in that: The thermophotovoltaic radiator system comprises: Transmission model building module, used to establish a single-layer uniform dielectric film transmission model based on the wave equation and Maxwell equations, and to establish a multi-layer uniform dielectric film transmission model in combination with the transfer matrix method; A transmittance relationship determination module is used to obtain the relationship between the transmittance of the film and the thickness and the relationship between the transmittance of the film and the refractive index in the presence and absence of an absorbing medium; A pass filter model building module is used to add a short-wave pass filter to the bottom of a broadband filter to filter out long waves and build a broadband filter plus short-wave pass filter model; The filter structure design module is used to design a new filter structure that is superior to the single-cavity filter.

6. A computer device, characterized in that: The computer device comprises a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the processor executes the steps of the control method of the thermophotovoltaic radiator system according to claim 1 . 7 . A computer-readable storage medium storing a computer program, wherein when the computer program is executed by a processor, the processor is caused to execute the steps of the control method of the thermophotovoltaic radiator system according to claim 1 .

8. An information data processing terminal, characterized in that: The information data processing terminal is used to implement the thermal photovoltaic radiator system as claimed in claim 5.

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