Thermoelectric conversion device and building structure monitoring system

Abstract

The present application provides a thermoelectric conversion device and a building structure monitoring system, wherein the thermoelectric conversion device includes a heat-conducting layer and a heat-dissipating layer, wherein a plurality of P-type semiconductor material module groups and a plurality of N-type semiconductor material module groups are arranged alternately between the heat-conducting layer and the heat-dissipating layer, wherein the plurality of P-type semiconductor material module groups and the plurality of N-type semiconductor material module groups are connected in series through a first guide bar; a heat channel closed loop is arranged in the heat-dissipating layer, wherein a condensing medium is arranged in the heat channel closed loop; and a phase change material is arranged in the heat-conducting layer. The present application enhances heat conduction by arranging a heat-conducting layer and a heat-dissipating layer at the hot end and the cold end of the P-type semiconductor material module group and the N-type semiconductor material module group. The heat-dissipating layer has a built-in heat channel closed loop, and the heat-conducting layer absorbs and releases a large amount of heat and transfers heat by phase change of the phase change material, thereby maintaining a stable temperature difference, and the internal temperature of the heat-dissipating layer and the heat-conducting layer is more uniform, thereby improving the efficiency of thermoelectric conversion.

Description

Technical Field

[0001] The present application belongs to the field of thermoelectric conversion technology, and more specifically, relates to a thermoelectric conversion device and a building structure monitoring system. Background Art

[0002] Thermoelectric materials, also known as thermoelectric materials, can convert temperature differences into electrical energy. Common thermoelectric materials include bismuth telluride (Bi2Te3), tin selenide (SnSe), etc.

[0003] At present, the thermoelectric conversion efficiency of thermoelectric conversion devices based on thermoelectric materials is generally low, which is not conducive to the promotion and application of thermoelectric materials. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide a thermoelectric conversion device and a building structure monitoring system to solve the technical problem of low thermoelectric conversion efficiency of thermoelectric conversion devices based on thermoelectric materials in the prior art.

[0005] To achieve the above-mentioned purpose, the technical solution adopted by the embodiment of the present application is as follows: In a first aspect, the embodiment of the present application provides a thermoelectric conversion device, comprising: a heat-conducting layer and a heat-dissipating layer, a plurality of P-type semiconductor material module groups and a plurality of N-type semiconductor material module groups arranged alternately are arranged between the heat-conducting layer and the heat-dissipating layer, and the plurality of P-type semiconductor material module groups and the plurality of N-type semiconductor material module groups are connected in series via a first guide bar;

[0006] A heat channel closed loop is provided in the heat dissipation layer, and a condensing medium is provided in the heat channel closed loop;

[0007] Phase change material is arranged in the heat conducting layer.

[0008] In an optional implementation of the first aspect, the heat dissipation layer is in a cylindrical ring shape, and the alternatingly arranged multiple P-type semiconductor material module groups and multiple N-type semiconductor material module groups are distributed in a circular ring shape.

[0009] In an optional implementation of the first aspect, the P-type semiconductor material module group includes a plurality of P-type semiconductor material rods, the plurality of P-type semiconductor material rods are coated with a first insulation block in the middle along the length direction thereof, and the tops and bottoms of the plurality of P-type semiconductor material rods are respectively connected in series through second guide bars;

[0010] The N-type semiconductor material module group includes a plurality of N-type semiconductor material rods, wherein the plurality of N-type semiconductor material rods are coated with a second insulation block in the middle along the length direction thereof, and the tops and bottoms of the plurality of N-type semiconductor material rods are respectively connected in series via a third guide bar.

[0011] In an optional implementation of the first aspect, the plurality of P-type semiconductor material rods are distributed in a circular ring shape; and / or the plurality of N-type semiconductor material rods are distributed in a circular ring shape.

[0012] In an optional implementation of the first aspect, the heat-conducting layer is split and distributed in a circular ring shape, or the heat-conducting layer is integral and in a cylindrical ring shape.

[0013] In an optional implementation of the first aspect, the thermally conductive layer also includes an insulating layer and one or more thermally conductive blocks, the insulating layer is provided with a mounting hole, the thermally conductive blocks are installed in the mounting holes, the insulating layer is enclosed into a closed cavity, and the phase change material is located in the closed cavity.

[0014] In an optional implementation of the first aspect, the insulating layer is made of a calcium silicate board.

[0015] In a second aspect, an embodiment of the present application provides a system for monitoring a building structure, comprising: a data acquisition and processing unit and a thermoelectric conversion device as described in any one of the first aspects;

[0016] The heat dissipation layer of the thermoelectric conversion device is located inside the building structure, and the heat conduction layer of the thermoelectric conversion device is located outside the building structure;

[0017] The thermoelectric conversion device is used to provide electrical energy for the data acquisition and processing unit;

[0018] The data acquisition and processing unit includes a data transmission module, a processor and at least one sensor;

[0019] The at least one sensor is used to collect structural data inside the building structure and / or outside the building structure; the structural data includes at least one of temperature data, vibration data, stress data, strain data, pressure data, and displacement data;

[0020] The processor is used to process the structure data to obtain processing result data;

[0021] The data transmission module is used to transmit the processing result data to the first device.

[0022] In an optional implementation of the second aspect, an energy storage unit is further included, wherein the energy storage unit includes a DC-DC converter, at least one capacitor, and a diode connected in series in a current flow direction;

[0023] The DC-DC converter is used to adjust the voltage output by the thermoelectric conversion device;

[0024] The at least one capacitor is used to store electrical energy;

[0025] The diode is used to prevent the reverse flow of current.

[0026] In an optional embodiment of the second aspect, it also includes an energy management unit connected in series with the thermoelectric conversion device, the energy storage unit and the data acquisition and processing unit, the energy management unit includes a monitoring module and a control module, the monitoring module is used to monitor at least one of the current, voltage and temperature; the control module is used to determine the power usage priority according to the data provided by the monitoring module, and distribute power among the at least one sensor, the processor and the data transmission module according to the power usage priority.

[0027] The beneficial effects of a thermoelectric conversion device and a system for monitoring building structures provided by the embodiments of the present application are as follows: the embodiments of the present application enhance heat conduction by setting a heat-conducting layer and a heat-dissipating layer at the hot end and the cold end of the P-type semiconductor material module group and the N-type semiconductor material module group. The heat-dissipating layer has a built-in heat channel closed loop, and a condensing medium is set in the heat channel closed loop. The heat-conducting layer uses the phase change of the phase change material to absorb and release a large amount of heat and conduct heat transfer, maintaining a stable temperature difference, and the internal temperature of the heat dissipating layer and the heat-conducting layer is more uniform; in addition, the temperature difference between the heat-conducting layer and the heat-dissipating layer is increased, thereby improving the thermoelectric conversion efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0029] Figure 1 A front view of a thermoelectric conversion device provided in an embodiment of the present application;

[0030] Figure 2 A cross-sectional view of a thermoelectric conversion device provided in an embodiment of the present application;

[0031] Figure 3 A top view of a thermoelectric conversion device provided in an embodiment of the present application;

[0032] Figure 4 A schematic diagram of the structure of the heat dissipation layer provided in an embodiment of the present application;

[0033] Figure 5A A perspective view of a heat-conducting layer provided in an embodiment of the present application;

[0034] Figure 5B A cross-sectional view of a heat-conducting layer provided in an embodiment of the present application;

[0035] Figure 6 A top view of a plurality of P-type semiconductor material module groups and a plurality of N-type semiconductor material module groups arranged alternately according to an embodiment of the present application;

[0036] Figure 7 for Figure 6 A front view of the portion A in FIG.

[0037] Figure 8 A schematic diagram of the structure of a system for monitoring a building structure provided in an embodiment of the present application.

[0038] Among them, the reference numerals in the figure are:

[0039] 1-P-type semiconductor material module group; 11-P-type semiconductor material rod; 12-first insulation block; 13-second guide bar; 2-N-type semiconductor material module group; 21-N-type semiconductor material rod; 22-second insulation block; 23-third guide bar; 3-first guide bar; 4-wire; 5-heat conducting layer; 51-shell; 52-heat conducting block; 53-phase change material; 6-heat dissipation layer; 61-heat channel closed loop; 7-energy storage unit; 71-DC-DC converter; 72-first supercapacitor; 73-second supercapacitor; 74-diode; 8-energy management unit; 81-monitoring module; 82-control module; 9-data acquisition and processing unit; 91-data transmission module; 92-processor; 93-sensor; 10-thermoelectric conversion device. DETAILED DESCRIPTION

[0040] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0041] In the description of the embodiments of the present application, the term "plurality" refers to more than two (including two).

[0042] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0043] In the description of the embodiments of the present application, unless otherwise clearly specified and limited, technical terms such as "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0044] In the description of the embodiments of the present application, the orientations or positional relationships indicated by technical terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", and "circumferential" are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the embodiments of the present application.

[0045] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0046] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of the associated objects, indicating that there may be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0047] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments in any suitable manner.

[0048] Please also read Figures 1 to 3, the thermoelectric conversion device provided by the embodiment of the present application is now described. The thermoelectric conversion device comprises a heat conducting layer 5 and a heat dissipation layer 6, between which a plurality of P-type semiconductor material module groups 1 and a plurality of N-type semiconductor material module groups 2 are arranged alternately, and the plurality of P-type semiconductor material module groups 1 and the plurality of N-type semiconductor material module groups 2 are connected in series through a first guide bar 3; a heat channel closed loop 61 is arranged in the heat dissipation layer 6, and a condensing medium is arranged in the heat channel closed loop 61; and a phase change material 53 is arranged in the heat conducting layer 5.

[0049] In the P-type semiconductor material module group 1, most of the carriers are electrons, which carry a negative charge and can move in a directional manner under the action of a temperature gradient. In the N-type semiconductor material module group 2, most of the carriers are holes, which are locations where electrons are missing. They carry a positive charge and can move in a directional manner under the action of a temperature gradient. When there is a temperature difference between the two ends of a thermoelectric material, that is, there is a temperature gradient between the hot end and the cold end, the carriers at the hot end (whether electrons or holes) will gain higher energy and thus have a stronger ability to move. Under the action of the temperature gradient, the carriers at the hot end will diffuse to the cold end, thereby forming a diffusion current.

[0050] The thermoelectric conversion device of the embodiment of the present application is installed in a building structure, and the heat dissipation layer 6 and at least part of the multiple P-type semiconductor material module groups 1 and the multiple N-type semiconductor material module groups 2 are located inside the building structure; at least the end face of the heat conductive layer 5 is located outside the building structure. Since the temperature outside the building structure is higher than that inside the building structure most of the time, the end of the multiple P-type semiconductor material module groups 1 and the multiple N-type semiconductor material module groups 2 close to the heat dissipation layer 6 is the cold end, and the end close to the heat conductive layer 5 is the hot end. In the P-type semiconductor material module group 1, electrons diffuse from the hot end to the cold end, and in the N-type semiconductor material module group 2, holes diffuse from the hot end to the cold end, thereby forming a potential difference and generating electrical energy. Under the series action of the first guide bar 3, the multiple P-type semiconductor material module groups 1 and the multiple N-type semiconductor material module groups 2 form a circuit path. Specifically, the current flows into the cold end of the N-type semiconductor material module group 2, flows out from the hot end of the N-type semiconductor material module group 2, reaches the hot end of the P-type semiconductor material module group 1 through the first guide bar 3, and flows out from the cold end of the P-type semiconductor material module group 1, and then reaches the cold end of the N-type semiconductor material module group 2 through the first guide bar 3, thereby repeatedly forming a current path.

[0051] The embodiment of the present application enhances heat conduction by providing a heat conducting layer 5 and a heat dissipating layer 6 at the hot end and the cold end of the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2. The heat dissipating layer 6 has a built-in heat channel closed loop 61, and a condensing medium is provided in the heat channel closed loop 61. The heat conducting layer 5 utilizes the phase change material 53 to absorb and release a large amount of heat and conduct heat transfer, maintaining a stable temperature difference, thereby improving the thermoelectric conversion efficiency.

[0052] Due to factors such as light, rain, and installation location, there will be a temperature difference inside the hot end or the cold end. For example, if part of the hot end is illuminated, the temperature of the illuminated part of the hot end will be high, and the temperature of the hot end that is not illuminated will be low. If part of the hot end is intruded into rainwater, there will also be a temperature difference inside the hot end. If the thermoelectric conversion device is installed close to the heat source or cold source, there will also be a temperature difference inside the hot end or the cold end. If there is a temperature difference inside the hot end or the cold end, that is, the temperature of different parts of the hot end or the cold end is inconsistent, then this temperature difference itself will become an interference factor inside the thermoelectric material (that is, inside the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2). Specifically, it will cause uneven carrier distribution inside the thermoelectric material, thereby affecting the stability and size of the potential difference. In addition, the internal temperature difference may also cause problems such as thermal stress and thermal expansion of the thermoelectric material, further reducing its power generation efficiency and stability. In the embodiment of the present application, a heat channel closed loop 61 is provided in the heat dissipation layer 6, and a condensing medium is provided in the heat channel closed loop 61, so that the temperature of the cold end can be rapidly reduced, and the temperature difference between different parts of the cold end can be rapidly reduced, so that the temperature of the cold end is more uniform. By providing a phase change material 53 in the heat conductive layer 5, the temperature difference between different parts of the hot end can be reduced, so that the temperature of the hot end is more uniform.

[0053] Since the thermoelectric conversion device of the embodiment of the present application makes the temperature of the hot end more uniform, and also makes the temperature of the cold end more uniform, the adverse effects caused by the temperature difference inside the hot end or the cold end are reduced, and the stability and size of the potential difference are improved. It can also reduce the thermal stress and thermal expansion of the thermoelectric material, and further improve the power generation efficiency and stability of the thermoelectric conversion device.

[0054] In addition, since the heat channel closed loop 61 is provided in the heat dissipation layer 6, the temperature of the cold end is reduced, thereby increasing the temperature difference between the cold end and the hot end, and further improving the power generation efficiency of the thermoelectric conversion device.

[0055] When the temperature outside the building structure is high during the day, the hot end temperature of the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2 is higher than the cold end, and the temperature difference between the hot end and the cold end is used to generate electricity. When the temperature outside is low at night, the phase change material 53 in the heat conductive layer 5 is used to release heat in a phase-changing manner to assist in generating a temperature difference, so that the hot end temperature of the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2 is still higher than the cold end, and the temperature difference between the hot end and the cold end is continued to generate electricity, thereby extending the time of the high temperature difference, and thus more electricity can be generated.

[0056] By installing the wires 4 at the hot end of the N-type semiconductor material module group 2 and the cold end of the P-type semiconductor material module group 1, the thermoelectric conversion device of the embodiment of the present application becomes a power source.

[0057] As an optional embodiment, the heat conducting layer 5 and the heat dissipating layer 6 are arranged in parallel. The parallel arrangement can ensure that the heat remains relatively uniform during the transfer process, and reduce the temperature difference fluctuation caused by the uneven heat transfer path. This helps to maintain a stable temperature difference between the heat conducting layer 5 and the heat dissipating layer 6, thereby improving the thermoelectric conversion efficiency.

[0058] As an optional implementation, see Figure 3 , the heat dissipation layer 6 is cylindrical and the heat channel closed loop 61 is annular. The annular heat channel closed loop 61 will be more conducive to the flow of the condensing medium in the heat dissipation layer 6, thereby quickly reducing the temperature of the heat dissipation layer 6. It is easy to understand that the heat dissipation layer 6 can also be other shapes, such as a straight shape, in which case the heat channel closed loop 61 can be designed as a runway shape. Or the heat dissipation layer 6 is L-shaped, S-shaped, U-shaped, etc., which can be flexibly designed according to the installation environment of the building structure.

[0059] The material of the heat dissipation layer 6 should be a material with good thermal conductivity. Preferably, the heat dissipation layer 6 can be made of copper or aluminum and anodized to provide good corrosion resistance and oxidation resistance.

[0060] Optionally, the heat dissipation layer 6 may be a whole or may be composed of two semicircular rings (see Figure 4 ) are spliced ​​into a cylindrical ring. The hot channel closed loop 61 can be one or more, and are arranged in concentric rings. The hot channel closed loop 61 can be a channel set in the heat dissipation layer 6. When the heat dissipation layer 6 is spliced ​​by two semicircular rings, it is connected between the hot channel closed loops 61 at the joints of the two heat dissipation layers 6 through a joint. The hot channel closed loop 61 can also be a pipeline built into the heat dissipation layer 6 (not shown in the figure), and the pipeline can be fully or partially embedded in the heat dissipation layer 6. Optionally, part of the pipeline is located outside the heat dissipation layer 6 and close to a cold source, such as an area with ventilation or water flow, so that the temperature of the heat dissipation layer 6 can be quickly reduced. The hot channel closed loop 61 can be connected to an external condensing medium, or it can be connected without an external condensing medium. The embodiments of the present application are not limited to this.

[0061] The condensing medium arranged in the hot channel can be water, air, refrigerant, etc.

[0062] As an optional implementation, see Figure 5A-Figure 5B The heat-conducting layer 5 also includes a shell 51 and one or more heat-conducting blocks 52. The shell is provided with mounting holes (not shown in the figure). The number of the mounting holes is the same as the number of the heat-conducting blocks and the positions are corresponding. The heat-conducting blocks 52 are installed on the mounting holes of the shell 51. The heat-conducting blocks 52 and the shell 51 enclose a closed cavity, and the phase change material 53 is located in the closed cavity.

[0063] Specifically, a mounting hole is provided on the shell 51. After the heat-conducting block 52 passes through the mounting hole, one end face of the heat-conducting block 52 can be bonded to the inner wall of the shell 51 by a heat-conducting adhesive, or connected to the shell 51 by a bolt; the heat-conducting block 52 and the mounting hole can be sealed by a sealant. After the heat-conducting block 52 is installed in the mounting hole, the circumferential side wall of the heat-conducting block 52 and the inner wall of the shell form a closed cavity, and the phase change material 53 is located in the closed cavity. The circumferential side wall of the heat-conducting block 52 is in direct contact with the phase change material 53, thereby accelerating the heat conduction speed. The other end face of the plurality of heat-conducting blocks 52 is tightly fitted with one end face of the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2, so that the temperature in the heat-conducting layer can be quickly transferred to the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2.

[0064] As an optional embodiment, the shell 51 is made of an insulating material, such as a calcium silicate board. Alternatively, the shell 51 is made of a metal material such as aluminum, copper, iron, etc., and its outer surface is covered with an insulating layer (not shown in the figure). The insulating layer can be made of a material with low thermal conductivity and high temperature resistance and corrosion resistance such as aerogel or glass wool, or the insulating layer is made of a calcium silicate board to improve the thermal conductivity efficiency and prevent heat exchange with the surrounding during the temperature transfer process.

[0065] The heat conducting block 52 may be made of a material with a high thermal conductivity, such as copper, and may be nickel-plated to enhance corrosion resistance and oxidation resistance.

[0066] The phase change material 53 may be paraffin, hydrated salt, etc. The phase change material 53 can undergo physical state changes (such as solid-liquid, liquid-solid) when absorbing or releasing heat, and absorb or release a large amount of heat while keeping the temperature basically unchanged, thereby maintaining the stability of the temperature difference.

[0067] As an optional implementation, see Figure 1-Figure 2 The heat conducting layer 5 is split, that is, the heat conducting layer 5 is a plurality of cylinders located on the same horizontal plane, the heat conducting layer 5 corresponds one by one to the plurality of P-type semiconductor material module groups 1 and the plurality of N-type semiconductor material module groups 2, and the heat conducting layer 5 is distributed in a circular ring shape.

[0068] As another optional implementation, the heat-conducting layer 5 is integral, that is, the heat-conducting layer 5 is an integral body in the shape of a cylindrical ring, and the phase change material 53 is located in the integral heat-conducting layer 5 .

[0069] The cylindrical ring-shaped heat-conducting layer 5 and the cylindrical ring-shaped / circular ring-shaped heat-dissipating layer 6 can be of the same size, and in this case, a plurality of P-type semiconductor material module groups 1 and a plurality of N-type semiconductor material module groups 2 are vertically arranged between the heat-dissipating layer 6 and the heat-conducting layer 5. The cylindrical ring-shaped heat-conducting layer 5 and the cylindrical ring-shaped heat-dissipating layer 6 can be of different sizes, and in this case, a plurality of P-type semiconductor material module groups 1 and a plurality of N-type semiconductor material module groups 2 are obliquely arranged between the heat-dissipating layer 6 and the heat-conducting layer 5. Through the above design, the length of the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2 can be changed at the same thickness. Since the length of the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2 will affect the thermoelectric efficiency, in order to obtain higher thermoelectric efficiency, the length that makes the thermoelectric efficiency highest can be found through experiments and theoretical calculations based on the resistivity, carrier concentration, temperature gradient, and required thermoelectric potential of the material.

[0070] The heat-conducting layer 5 can be fixedly connected to one end of a plurality of P-type semiconductor material module groups 1 and a plurality of N-type semiconductor material module groups 2, such as by bonding with heat-conducting glue, bolting, etc. When bolting, bolt holes are provided on the shell 51 and the heat-conducting block 52, and threaded sleeves (not shown in the figure) are pre-embedded at the end faces of the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2, so that they can be connected by bolts. It can also be a detachable connection, for example, a limiting groove that matches the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2 is designed at the end face of the heat-conducting block 52, and a thermal pad can be provided in the limiting groove. Since the thermoelectric conversion device of the embodiment of the present application needs to be pre-embedded in the building structure when in use, the heat-conducting layer 5 and one end of the plurality of P-type semiconductor material module groups 1 and the plurality of N-type semiconductor material module groups 2 can be fixed by concrete inside the building structure.

[0071] The heat dissipation layer 6 can be fixedly connected to the other ends of the plurality of P-type semiconductor material module groups 1 and the plurality of N-type semiconductor material module groups 2, or can be detachably connected.

[0072] As an optional implementation, see Figure 2 , Figure 6 In order to adapt to the cylindrical ring design of the heat dissipation layer 6, the embodiment of the present application designs the multiple P-type semiconductor material module groups 1 and the multiple N-type semiconductor material module groups 2 that are alternately arranged into a circular ring distribution.

[0073] As an optional implementation, see Figure 7 The P-type semiconductor material module group 1 includes a plurality of P-type semiconductor material rods 11, a first insulation block 12 and a plurality of second guide bars 13. The plurality of P-type semiconductor material rods 11 are coated with the first insulation block 12 in the middle along their length direction, and the tops and bottoms of the plurality of P-type semiconductor material rods 11 are connected in series respectively through the second guide bars 13.

[0074] The N-type semiconductor material module group 2 includes a plurality of N-type semiconductor material rods 21, a second insulation block 22 and a plurality of third guide bars 23. The plurality of N-type semiconductor material rods 21 are coated with the second insulation block 22 in the middle along their length direction, and the tops and bottoms of the plurality of N-type semiconductor material rods 21 are connected in series respectively through the third guide bars 23.

[0075] To ensure good electrical contact between the second conductive bar 13 and the P-type semiconductor material rod 11, and good electrical contact between the third conductive bar 23 and the N-type semiconductor material rod 21, a conductive paste can be used to fill the gap to reduce resistance. The second conductive bar 13 and the third conductive bar 23 are made of highly conductive and corrosion-resistant materials, such as nickel-plated copper.

[0076] In the embodiment of the present application, each P-type semiconductor material module group 1 includes a plurality of P-type semiconductor material rods 11, each P-type semiconductor material rod 11 is equivalent to a battery, and the tops and bottoms of the plurality of P-type semiconductor material rods 11 are connected in series through a second guide bar 13, which is equivalent to connecting a plurality of batteries in parallel, thereby increasing the current.

[0077] Similarly, each N-type semiconductor material module group 2 includes multiple N-type semiconductor material rods 21, each N-type semiconductor material rod 21 is also equivalent to a battery, and the tops and bottoms of the multiple N-type semiconductor material rods 21 are connected in series through the third guide bar 23, which is equivalent to connecting multiple batteries in parallel, thereby increasing the current.

[0078] As an optional implementation, see Figure 6 In order to accommodate more P-type semiconductor material rods 11 in the P-type semiconductor material module group 1 and to make the P-type semiconductor material module group 1 adapt to the cylindrical ring-shaped thermal conductive layer 5, the multiple P-type semiconductor material rods 11 in the P-type semiconductor material module group 1 of the embodiment of the present application are distributed in a circular ring shape.

[0079] Similarly, the multiple N-type semiconductor material rods 21 in the N-type semiconductor material module group 2 are distributed in a circular ring shape.

[0080] In the embodiment of the present application, the P-type semiconductor material rod 11 is made of a bismuth telluride-carbon fiber composite cement-based material doped with boron and / or aluminum, and the N-type semiconductor material rod 21 is made of a bismuth telluride-carbon fiber composite cement-based material doped with phosphorus and / or arsenic. The bismuth telluride (Bi2Te3)-carbon fiber composite cement-based material has high thermal conductivity, is compatible with the structure after being placed inside the concrete structure, and is durable.

[0081] See also Figure 8The embodiment of the present application also provides a system for monitoring a building structure, which at least includes a data acquisition and processing unit 9 and a thermoelectric conversion device 10 of each of the above embodiments. The heat dissipation layer 6 of the thermoelectric conversion device 10 is located inside the building structure, and the heat conduction layer 5 of the thermoelectric conversion device 10 is located outside the building structure; the thermoelectric conversion device 10 provides power to the data acquisition and processing unit 9; the data acquisition and processing unit 9 includes a data transmission module 91, a processor 92 and at least one sensor 93.

[0082] At least one sensor 93 is used to collect structural data inside and / or outside the building structure; the structural data includes at least one of temperature data, vibration data, stress data, strain data, pressure data, and displacement data.

[0083] The processor 92 is used to process the structural data to obtain processing result data.

[0084] The data transmission module 91 is used to transmit the processing result data to the first device. For example, the first device can be a server of the monitoring center, or a cloud server, a mobile phone of a maintenance person or other related personnel.

[0085] The at least one sensor 93 is at least one of a temperature sensor, a vibration sensor, a stress sensor, a strain sensor, a pressure sensor, and a displacement sensor.

[0086] Temperature sensors can be set inside and outside the building structure to collect temperature data inside and outside the building structure, thereby obtaining temperature difference data. Based on the temperature difference data, it can be determined whether the thermoelectric conversion efficiency of the thermoelectric conversion device 10 is normal. After comparing with the actual thermoelectric conversion efficiency, it is determined whether the thermoelectric conversion device 10 needs maintenance.

[0087] Vibration sensors are installed inside building structures to collect vibration data inside the building structures. For buildings such as dams and bridges, vibration sensors can capture small changes in the structure, such as the expansion of cracks and fatigue of materials. These changes are often a precursor to the deterioration of the health of the structure. Therefore, after obtaining the vibration data inside the building structure, current risks can be identified and major safety accidents can be prevented.

[0088] Stress sensors are installed inside building structures to collect force variation data inside building structures. Stress sensors are mainly used to monitor the stress distribution and changes of building structures under load. By measuring the stress state inside the structure in real time, the bearing capacity and stability of the structure can be evaluated. When the stress exceeds the design value, the sensor can issue an early warning in time to prompt relevant personnel to take corresponding measures.

[0089] Strain sensors are installed inside building structures to collect strain data inside the building structures. Strain sensors are also used to monitor the strain of building structures under load. Unlike stress sensors, strain sensors focus more on measuring the tiny deformations that occur in the structure during the stress process. These data are crucial for evaluating the stiffness and fatigue performance of the structure. By monitoring strain data over a long period of time, the life of the structure and possible failure modes can be predicted.

[0090] Pressure sensors are installed inside building structures to collect pressure data inside the building structures. In buildings such as dams and bridges, pressure sensors are mainly used to monitor the pressure on the supporting parts of the structure (such as bridge piers and dam foundations). These pressure data can help engineers understand the stress state and stability of the structure. In addition, pressure sensors can also be used to monitor the impact of water level changes on the structure, and to determine whether there are safety hazards such as overload or local pressure concentration.

[0091] Displacement sensors are installed inside building structures to collect displacement data inside the building structures. Displacement sensors are mainly used to monitor the deformation of building structures such as dams and bridges. When a structure is subjected to external loads (such as wind, water, vehicles, etc.), it will deform to a certain extent. Displacement sensors can measure these deformation data in real time and transmit them to the monitoring system for analysis. By monitoring displacement data for a long time, the stability and safety of the structure can be evaluated, and potential deformation problems can be discovered and dealt with in a timely manner.

[0092] The data transmission module 91 can select transmission modules such as LoRa and NB-IoT to achieve low-power, long-distance, stable and efficient data transmission.

[0093] The thermoelectric conversion device provides power for the data acquisition and processing unit 9. The sensor 93 starts and collects building structure data at regular intervals and enters a dormant state at other times to save energy. The processor 92 then performs data analysis and processing, and transmits key data and abnormal data to the monitoring center through the data transmission module 91.

[0094] As an optional embodiment, the system for monitoring building structures in the embodiment of the present application also includes an energy storage unit 7, which is connected in series with the data acquisition and processing unit 9 and the thermoelectric conversion device 10; the energy storage unit 7 includes a DC-DC converter 71, at least one capacitor and a diode 74, which are connected in series in the direction of current flow.

[0095] See also Figure 6 The current flows from the positive electrode of the thermoelectric conversion device 10, passes through the data acquisition and processing unit 9 and the energy storage unit 7 in the circuit, and finally flows back to the negative electrode of the thermoelectric conversion device 10. Figure 8, the DC-DC converter 71 is connected to the positive electrode of the thermoelectric conversion device 10.

[0096] Since the voltage output by the thermoelectric conversion device 10 is relatively small, the DC-DC converter 71 is used to convert the low voltage output by the thermoelectric conversion device 10 into a higher voltage required by the load. At least one capacitor is used to store electrical energy and can smooth the voltage fluctuations generated by the DC-DC converter 71 during the voltage boost process, thereby providing a more stable voltage output for the load. The diode 74 is used to prevent the current from flowing in the reverse direction. In extreme cases, the temperature of the heat dissipation layer 6 will be higher than the temperature of the heat conduction layer 5, and a reverse current will be generated at this time. Since the diode 74 is located at the very end, the reverse current first passes through the diode 74 in the energy storage unit 7. At this time, the diode 74 can prevent the current from continuing to flow to the capacitor and the DC-DC converter 71, thereby protecting the DC-DC converter and the capacitor from damage by the reverse voltage.

[0097] Preferably, the capacitor is a supercapacitor, and there are two of them, namely, a first supercapacitor 72 (large capacity) and a second supercapacitor 73 (small capacity). The supercapacitor of the embodiment of the present application is a supercapacitor that can stably operate in a wide temperature range, and it is recommended that the operating temperature range is -40°C to +70°C, and the supercapacitor can be quickly charged and discharged to meet the energy demand and recovery of the system in a short time.

[0098] Since the electric energy generated by the thermoelectric conversion device is related to the temperature difference, the electric energy generated may fluctuate. The electric energy is stored by supercapacitors to smooth the fluctuations, ensure that the electronic components have a stable power supply, and use supercapacitors of different capacity levels to store energy in a hierarchical manner to manage and utilize energy more efficiently. The voltage is then adjusted by the DC-DC converter 71 to ensure the normal operation of other loads. In addition, when the thermoelectric conversion device is temporarily unable to provide sufficient electric energy, the supercapacitor can provide backup electric energy to ensure the continuous operation of the system. The diode 74 is used to prevent the current from flowing in the opposite direction, thereby protecting the circuit.

[0099] Furthermore, the system for monitoring the building structure also includes an energy management unit 8, which includes a monitoring module 81 and a control module 82. The monitoring module 81 is used to monitor at least one of the current, voltage, and temperature; the control module 82 is used to determine the power usage priority based on the data provided by the monitoring module 81, and distribute power among at least one sensor 93, the processor 92, and the data transmission module 91 according to the power usage priority.

[0100] The energy management unit 8 is used to monitor and predict the energy demand of the system of the monitoring building structure, and provide an optimization strategy for energy allocation and storage to improve the overall efficiency of the system. Specifically, according to the power priority and energy demand of different loads (i.e., at least one sensor 93, processor 92, and data transmission module 91), the energy supply is dynamically allocated and adjusted to ensure that the corresponding loads have priority to obtain sufficient energy during operation. For example, the power priority of energy allocation in the data acquisition stage of the sensor 93 is increased, while it is reduced in the data analysis and transmission stage, and the power priority of the processor 92 and the data transmission module 91 is correspondingly increased. In addition, the monitoring module 81 records data for optimizing energy use and also protects the system to prevent system damage caused by overvoltage, overcurrent, and overtemperature.

[0101] Exemplarily, the thermoelectric conversion device 10 is placed inside the bridge pier, and the energy management unit 8 and the data acquisition and processing unit 9 are installed outside the building structure. The cold end of the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2 and the heat dissipation layer 6 are placed inside the building structure; the heat conductive layer 5 is placed at the end surface of the external environment of the building structure to facilitate heat conduction. When the temperature outside the building structure is high during the day, the thermoelectric conversion device uses the temperature difference between the hot end (i.e., the end where the heat conductive layer 5 is located) and the cold end (i.e., the end where the heat dissipation layer 6 is located) to generate electric energy and the super capacitor stores the electric energy for smoothing. When the external temperature is low at night, the phase change material 53 in the heat conductive layer 5 is used to release heat in a phase-changing manner to assist in generating the temperature difference. The energy management system performs reasonable management of electric energy (including storage, distribution, etc.). The data acquisition and processing system is started regularly according to the monitoring frequency requirements of the building structure (such as collecting data once an hour), monitors the deformation, vibration, temperature and other data of the bridge pier, and performs preliminary data sorting and analysis through the processor 92. If abnormal data is detected, the data is transmitted to the monitoring center through the data transmission module 91.

[0102] In the field of building structure health monitoring, traditional monitoring systems usually rely on external power supplies or batteries. However, these monitoring systems have many limitations in terms of energy supply, long-term operation and environmental adaptability. The embodiment of the present application combines a thermoelectric conversion device 10 based on thermoelectric materials with a system for monitoring building structures, which can realize autonomous power supply without an external power supply, so as to monitor building structures efficiently and stably, and reduce system maintenance costs.

[0103] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them; although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application, and they should all be included in the scope of the claims and specification of the present application. In particular, as long as there is no structural conflict, the various technical features mentioned in the various embodiments can be combined in any way. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions that fall within the scope of the claims.

Claims

1. A thermoelectric conversion device, characterized in that: include: A heat-conducting layer and a heat-dissipating layer, wherein a plurality of P-type semiconductor material module groups and a plurality of N-type semiconductor material module groups are alternately arranged between the heat-conducting layer and the heat-dissipating layer, and the plurality of P-type semiconductor material module groups and the plurality of N-type semiconductor material module groups are connected in series via a first guide bar; The heat dissipation layer is provided at the cold end of the plurality of P-type semiconductor material module groups and the plurality of N-type semiconductor material module groups, a heat channel closed loop is provided in the heat dissipation layer, and a condensing medium is provided in the heat channel closed loop; The heat-conducting layer is arranged at the hot end of the plurality of P-type semiconductor material module groups and the plurality of N-type semiconductor material module groups, and a phase change material is arranged in the heat-conducting layer; the heat-conducting layer is split and distributed in a circular ring shape, or the heat-conducting layer is integral and cylindrical ring-shaped; The P-type semiconductor material module group comprises a plurality of P-type semiconductor material rods, wherein the plurality of P-type semiconductor material rods are coated with a first insulation block in the middle along the length direction thereof, and the tops and bottoms of the plurality of P-type semiconductor material rods are respectively connected in series through second guide bars; The N-type semiconductor material module group comprises a plurality of N-type semiconductor material rods, wherein the plurality of N-type semiconductor material rods are coated with a second insulation block in the middle along the length direction thereof, and the tops and bottoms of the plurality of N-type semiconductor material rods are respectively connected in series through third guide bars; The P-type semiconductor material rod is a P-type cement-based composite material, and the N-type semiconductor material rod is an N-type cement-based composite material; The plurality of P-type semiconductor material rods are distributed in a circular ring shape; and / or the plurality of N-type semiconductor material rods are distributed in a circular ring shape.

2. The thermoelectric conversion device according to claim 1, characterized in that The heat dissipation layer is in the shape of a cylindrical ring, and the multiple P-type semiconductor material module groups and the multiple N-type semiconductor material module groups that are alternately arranged are distributed in the shape of a circular ring.

3. The thermoelectric conversion device according to claim 1 or 2, characterized in that: The heat-conducting layer also includes an insulating layer and one or more heat-conducting blocks. The insulating layer is provided with mounting holes. The heat-conducting blocks are mounted in the mounting holes to enclose the insulating layer into a closed cavity. The phase change material is located in the closed cavity.

4. The thermoelectric conversion device according to claim 3, characterized in that The insulating layer is made of calcium silicate board.

5. A system for monitoring a building structure, characterized in that: include: A data acquisition and processing unit and a thermoelectric conversion device as claimed in any one of claims 1 to 4; The heat dissipation layer of the thermoelectric conversion device is located inside the building structure, and the heat conduction layer of the thermoelectric conversion device is located outside the building structure; The thermoelectric conversion device is used to provide electrical energy for the data acquisition and processing unit; The data acquisition and processing unit includes a data transmission module, a processor and at least one sensor; The at least one sensor is used to collect structural data inside the building structure and / or outside the building structure; the structural data includes at least one of temperature data, vibration data, stress data, strain data, pressure data, and displacement data; The processor is used to process the structure data to obtain processing result data; The data transmission module is used to transmit the processing result data to the first device.

6. The system for monitoring a building structure according to claim 5, characterized in that: It also includes an energy storage unit connected in series with the thermoelectric conversion device and the data acquisition and processing unit, wherein the energy storage unit includes a DC-DC converter, at least one capacitor and a diode connected in series in sequence along the current flow direction; The DC-DC converter is used to adjust the voltage output by the thermoelectric conversion device; The at least one capacitor is used to store electrical energy; The diode is used to prevent the reverse flow of current.

7. The system for monitoring a building structure according to claim 6, characterized in that: It also includes an energy management unit connected in series with the thermoelectric conversion device, the energy storage unit and the data acquisition and processing unit, the energy management unit includes a monitoring module and a control module, the monitoring module is used to monitor at least one of the current, voltage and temperature; the control module is used to determine the power usage priority according to the data provided by the monitoring module, and distribute power among the at least one sensor, the processor and the data transmission module according to the power usage priority.

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