Imprinting method for rapidly preparing photoresist mask

Abstract

The present invention provides an imprinting method for rapidly preparing a photoresist mask, comprising the following steps: a) obtaining nanostructured pattern data on a silicon master template by imprinting using a replica material to obtain an imprinted sample; b) after opening the edge of the imprinted sample obtained in step a), laminating the side with the nanostructured pattern data to a substrate, injecting photoresist into the opening to fill the gap between the imprinted sample and the substrate, and then subjecting the sample to UV curing to obtain a processed sample; c) peeling the processed sample obtained in step b) from the imprinted sample and removing the photoresist from the opening to obtain a photoresist mask having nanostructured pattern data consistent with the silicon master template. Compared to the prior art, the present invention utilizes specific non-photolithographic process steps to achieve better overall interaction, enabling the rapid preparation of high-fidelity and precision master templates for mass production and use, thereby improving production efficiency and product yield.

Description

Technical Field

[0001] The present invention relates to the field of micro-nano processing technology, and more particularly to an imprinting method for rapidly preparing a photoresist mask. Background Art

[0002] Nanoimprint lithography (NIM) is a key cutting-edge technology in micro- and nanofabrication. As a large-area, high-yield, and low-cost pattern replication technique, it continues to provide technical support for the semiconductor industry's pursuit of Moore's Law to reduce the size of semiconductor components. Since its invention, the technology has seen significant growth and development. Key elements of nanoimprint lithography include template preparation, pattern transfer methods, and the application of key materials. Template preparation, as the foundation of the process, is particularly crucial. Templates are primarily divided into master and daughter templates. Master templates are typically fabricated from silicon materials through photolithography and etching processes, which present limitations in equipment and consumables, require high precision, and are complex processes. For mass production, master templates are also susceptible to contamination and damage. Traditional photolithography and etching methods lack the process yield and efficiency to rapidly produce imprint master templates with the same precision. Therefore, rapid and high-fidelity preparation of imprint master templates is crucial for the mass production of nanoimprint lithography. Summary of the Invention

[0003] In view of this, the object of the present invention is to provide a method for quickly preparing a photoresist mask, which can achieve rapid preparation of a high-fidelity master template for mass production and use, thereby improving production efficiency and product yield.

[0004] The present invention provides an imprinting method for rapidly preparing a photoresist mask, comprising the following steps:

[0005] a) obtaining nanostructure pattern data on a silicon master template by imprinting using a replica material to obtain an imprinted sample;

[0006] b) after the edge of the stamped sample obtained in step a) is opened, the side with the nanostructure pattern data is bonded to the substrate, and then photoresist is injected into the opening to fill the gap between the stamped sample and the substrate, and then UV curing is performed to obtain a processed sample;

[0007] c) peeling off the processed sample obtained in step b) from the stamped sample, and removing the photoresist at the opening to obtain a photoresist mask whose nanostructure pattern data is consistent with the silicon master template.

[0008] Preferably, the thickness of the replication material in step a) is 0.1 mm to 1 mm.

[0009] Preferably, the process of obtaining the nanostructure graphic data on the silicon master template by imprinting in step a) is specifically as follows:

[0010] Use replication material to adhere to the silicon master template, place it in the imprinter chamber, heat it to 150℃~160℃, apply 2MPa~5MPa air pressure for 1min~5min, then cool it to room temperature and peel it off to obtain the imprinted sample.

[0011] Preferably, the position of the opening in step b) is located at the edge of the nanostructure pattern data area of ​​the embossed sample; the length of the opening is at least 1 / 3 of the length of the nanostructure pattern area of ​​the sample.

[0012] Preferably, the position of the opening needs to communicate with the gap formed by the embossed sample and the substrate.

[0013] Preferably, the lamination process in step b) is specifically as follows:

[0014] The side of the embossed sample with the nanostructured graphic data is bonded to the substrate, and bubbles are driven out with a roller. The sample is then placed in a vacuum drying dish and vacuumed to -0.1 MPa to -0.02 MPa for 2 to 8 minutes.

[0015] Preferably, the amount of the photoresist used in step b) is 10 μL to 100 μL.

[0016] Preferably, the process of filling the gap between the printed sample and the substrate with the photoresist in step b) is specifically as follows:

[0017] Apply 0.3MPa to 0.8MPa air pressure in the stamping machine chamber for 0.5min to 2min.

[0018] Preferably, the UV curing in step b) is carried out by irradiating with a UV lamp for 0.5 min to 1.5 min.

[0019] Preferably, the process of removing the photoresist at the opening in step c) is specifically as follows:

[0020] Use a scalpel to remove excess photoresist at the opening.

[0021] The invention provides an imprinting method for rapidly preparing a photoresist mask, comprising the following steps: a) obtaining nanostructured graphic data on a silicon mother template by imprinting using a replica material to obtain an imprinted sample; b) after the edge of the imprinted sample obtained in step a) is opened, laminating the side with the nanostructured graphic data to a substrate, injecting photoresist at the opening to fill the gap between the imprinted sample and the substrate, and then subjecting the sample to UV curing to obtain a processed sample; c) peeling the processed sample obtained in step b) off the imprinted sample, and removing the photoresist at the opening to obtain a photoresist mask having nanostructured graphic data consistent with the silicon mother template. Aiming at the shortcomings of the existing technology for the preparation and replication of photoresist patterns: (1) Photolithography: Due to the limitations of photolithography machines, developer equipment, photoresist, developer materials, and the cumbersome multiple overlay process and high precision requirements, it is impossible to quickly prepare high-fidelity photoresist masks; (2) Traditional nanoimprinting technology: From the perspective of equipment and process parameter debugging, it can only produce photoresist masks with very little residual glue, and cannot achieve a mask without residual glue; the present invention adopts specific non-photolithography process steps to achieve better overall interaction, and can achieve rapid preparation of high-fidelity precision master templates, so that products can be used in large-scale production and manufacturing, thereby improving production efficiency and product yield. Experimental results show that the imprinting method for rapidly preparing photoresist masks provided by the present invention achieves the following technical effects: (1) high-precision replication of photoresist patterns; (2) photoresist masks without residual glue; (3) it is conducive to the rapid preparation of master templates in the back-end process; therefore, it has broad application prospects and is of great significance for the guidance of photoresist mask production. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A process flow chart of an imprinting method for rapidly preparing a photoresist mask provided by an embodiment of the present invention;

[0023] Figure 2 This is a front view of an open plastic sheet in an embodiment of the present invention;

[0024] Figure 3 A cross-sectional view of a sample in steps (1) to (5) in an embodiment of the present invention;

[0025] Figure 4 A cross-sectional view of the sample in step (6) of an embodiment of the present invention;

[0026] Figure 5 This is a cross-sectional view of the finished product of step (7) in an embodiment of the present invention;

[0027] Figure 6 This is an effect diagram of the embodiment of the present invention showing that the photoresist mask structure without residual glue is consistent with the original imprint master template. DETAILED DESCRIPTION

[0028] The following will clearly and completely describe the technical solutions of the present invention in conjunction with the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0029] The present invention provides an imprinting method for rapidly preparing a photoresist mask, comprising the following steps:

[0030] a) obtaining nanostructure pattern data on a silicon master template by imprinting using a replica material to obtain an imprinted sample;

[0031] b) after the edge of the stamped sample obtained in step a) is opened, the side with the nanostructure pattern data is bonded to the substrate, and then photoresist is injected into the opening to fill the gap between the stamped sample and the substrate, and then UV curing is performed to obtain a processed sample;

[0032] c) peeling off the processed sample obtained in step b) from the stamped sample, and removing the photoresist at the opening to obtain a photoresist mask whose nanostructure pattern data is consistent with the silicon master template.

[0033] The present invention first uses a replicating material to obtain nanostructure pattern data on a silicon master template through embossing, producing an embossed sample. In the present invention, the replicating material can be a template adhesive + a substrate similar to PET, but an anti-sticking layer must be applied after the replication process. Alternatively, other fluorine-containing materials with good fillability and rapid curing properties, such as fluorine-containing plastic sheets or fluorine-containing adhesives, can be used. In a preferred embodiment, the replicating material is a fluorine-containing plastic sheet. The present invention does not specifically limit the source of the replicating material; commercially available working mold replicating materials familiar to those skilled in the art can be used.

[0034] In the present invention, the thickness of the replication material is preferably 0.1 mm to 1 mm, more preferably 0.2 mm.

[0035] In the present invention, the silicon master template is a silicon master template to be replicated in batches and has a high-precision structure. The present invention has no special restrictions on its source, and the nanoimprint master template can be prepared using traditional photolithography and etching process technology.

[0036] In the present invention, the process of obtaining the nanostructure graphic data on the silicon master template by imprinting is preferably as follows:

[0037] Use the replica material to bond the silicon master template, place it in the imprinter chamber, heat it to 150℃~160℃, apply 2MPa~5MPa air pressure for 1min~5min, then cool it to room temperature and peel it off to obtain the imprinted sample;

[0038] More preferably:

[0039] The replica material is bonded to the silicon master template, placed in the imprinter chamber, heated to 155°C, and an air pressure of 3MPa to 4MPa is applied for 2min to 4min. After that, it is cooled to room temperature and peeled off to obtain the imprinted sample.

[0040] After obtaining the stamped sample, the present invention opens the edge of the stamped sample, fits the side with the nanostructure graphic data to the substrate, then injects photoresist at the opening and fills the gap between the stamped sample and the substrate, and then UV cures it to obtain the processed sample.

[0041] In the present invention, the opening is preferably located at the edge of the region of the sample with nanostructured pattern data after the stamping, in order to avoid destroying the nanostructured pattern data obtained on the stamped sample. At the same time, the opening needs to be located in a position that is in communication with the gap formed by the stamped sample and the substrate, thereby ensuring that the photoresist can completely fill the gap formed by the stamped sample and the substrate after subsequent dispensing at the opening. The present invention has no particular restrictions on the shape of the opening, as long as it facilitates the subsequent injection of the photoresist. In the present invention, the length of the opening is at least 1 / 3 of the length of the nanostructured pattern region of the sample.

[0042] Taking the nanostructured pattern area of ​​the sample as a square as an example, the opening is located at the edge of one side of the square and can ensure that the opening is connected to the gap formed by the sample and the substrate after the stamping. The length of the opening can be equal to the side length of the square, or less than the side length, but at least 1 / 3 of the side length, so that the photoresist can completely fill the gap formed by the sample and the substrate after the stamping after subsequent dispensing. At the same time, when the length of the opening is less than the side length of the square, the present invention has no special restrictions on the specific location of the opening, and it is preferably located in the middle of the side length of the square. In addition, when the nanostructured pattern area of ​​the sample is other shapes such as a circle, an irregular shape, etc., similarly, the position of the opening is connected to the gap formed by the sample and the substrate after the stamping, and each adjacent gap can be connected to form a line. Then the length of the opening can be equal to the length of the line, or less than the length of the line. The present invention has no special restrictions on this.

[0043] The present invention has no special limitation on the material of the substrate, and any of silicon wafers, silicon dioxide, silicon nitride, glass, plastic, etc., which are well known to those skilled in the art, can be used, preferably silicon wafer.

[0044] In the present invention, the laminating process is preferably as follows:

[0045] The printed sample with the nanostructured graphic data is placed on the substrate, and bubbles are driven out by a roller. The sample is then placed in a vacuum drying dish and vacuumed to -0.1 MPa to -0.02 MPa for 2 to 8 minutes.

[0046] More preferably:

[0047] The side of the embossed sample with the nanostructured graphic data is bonded to the substrate, and bubbles are driven out with a roller. The sample is then placed in a vacuum drying dish and vacuumed to -0.08 MPa to -0.04 MPa for 4 to 6 minutes.

[0048] The present invention has no special restrictions on the type and source of the photoresist, and commercially available UV curing molding glue well known to those skilled in the art can be used.

[0049] In the present invention, the amount of the photoresist is preferably 10 μL to 100 μL, more preferably 40 μL to 60 μL.

[0050] In the present invention, the process of filling the gap between the printed sample and the substrate with the photoresist is preferably as follows:

[0051] Apply 0.3MPa to 0.8MPa air pressure in the stamping chamber for 0.5min to 2min;

[0052] More preferably:

[0053] Applying an air pressure of 0.4 MPa to 0.6 MPa in the imprint chamber for 1 minute allows the photoresist to quickly fill the gap between the imprinted sample and the substrate.

[0054] In the present invention, the UV curing is preferably carried out by irradiating a UV lamp, preferably for 0.5 min to 1.5 min, more preferably for 1 min, which is photoresist curing.

[0055] After obtaining the processed sample, the present invention peels off the processed sample from the printed sample and removes the photoresist at the opening to obtain a photoresist mask whose nanostructure graphic data is consistent with the silicon master template.

[0056] In the present invention, the process of removing the photoresist at the opening is preferably specifically as follows:

[0057] Use a scalpel to remove excess photoresist at the opening.

[0058] The present invention uses a replica material (preferably a fluorine-containing plastic sheet) to accurately capture the nanostructure graphic data on the silicon template by high temperature and high pressure imprinting, and then through a process route of opening the edge of the graphic area, vacuuming, dispensing glue, and applying pressure, a photoresist mask without residual glue can be quickly produced, and the structure is consistent with the original imprinted master template, thereby achieving the following technical effects: (1) high-precision replication of the photoresist pattern; (2) a photoresist mask without residual glue; and (3) it is conducive to the rapid preparation of the master template in the subsequent process.

[0059] The invention provides an imprinting method for rapidly preparing a photoresist mask, comprising the following steps: a) obtaining nanostructured graphic data on a silicon mother template by imprinting using a replica material to obtain an imprinted sample; b) after the edge of the imprinted sample obtained in step a) is opened, laminating the side with the nanostructured graphic data to a substrate, injecting photoresist at the opening to fill the gap between the imprinted sample and the substrate, and then subjecting the sample to UV curing to obtain a processed sample; c) peeling the processed sample obtained in step b) off the imprinted sample, and removing the photoresist at the opening to obtain a photoresist mask having nanostructured graphic data consistent with the silicon mother template. Aiming at the shortcomings of the existing technology for the preparation and replication of photoresist patterns: (1) Photolithography: Due to the limitations of photolithography machines, developer equipment, photoresist, developer materials, and the cumbersome multiple overlay process and high precision requirements, it is impossible to quickly prepare high-fidelity photoresist masks; (2) Traditional nanoimprinting technology: From the perspective of equipment and process parameter debugging, it can only produce photoresist masks with very little residual glue, and cannot achieve a mask without residual glue; the present invention adopts specific non-photolithography process steps to achieve better overall interaction, and can achieve rapid preparation of high-fidelity precision master templates, so that products can be used in large-scale production and manufacturing, thereby improving production efficiency and product yield. Experimental results show that the imprinting method for rapidly preparing photoresist masks provided by the present invention achieves the following technical effects: (1) high-precision replication of photoresist patterns; (2) photoresist masks without residual glue; (3) it is conducive to the rapid preparation of master templates in the back-end process; therefore, it has broad application prospects and is of great significance for the guidance of photoresist mask production.

[0060] To further illustrate the present invention, the following examples provide a detailed description. The fluorine-containing plastic sheet used in the following examples is IPS, provided by Obducat Technologies AB. This is a working mold replication material with properties similar to polycarbonate (PC), and its Young's modulus after curing is 1 to 3 GPa, making it suitable for replicating high-precision structures. The photoresist used is RES-R136-008, provided by Taiwan Polytech, a UV-curing molding adhesive with a wavelength of 365 nm and a curing time of 1 minute. It exhibits good flow properties before molding and exhibits etching resistance after molding. The equipment and tools used include an opener, a scalpel, a laminating roller, a vacuum drying dish, a glue spreader, and an imprinter.

[0061] Example

[0062] The process flow chart of the imprint method for rapidly preparing a photoresist mask provided by an embodiment of the present invention is shown in FIG. Figure 1 The specific steps are as follows:

[0063] (1) A 0.2 mm thick fluorine-containing plastic sheet was laminated to the imprinted silicon master template and placed in the imprinter chamber. The temperature was raised to 155°C and an air pressure of 3.5 MPa was applied for 3 min. The sheet was then cooled to room temperature and the patterned plastic sheet was peeled off.

[0064] (2) Use an opener to open the edge of the graphic area of ​​the plastic sheet with a 2mm aperture; see the front view of the open plastic sheet for details. Figure 2 As shown;

[0065] (3) Lay the patterned surface of the plastic sheet onto the new silicon wafer and use a roller to remove bubbles;

[0066] (4) Place the sample obtained in step (3) in a vacuum drying dish and evacuate to -0.06 MPa for 5 min;

[0067] (5) Take out the sample obtained in step (4) and place it on the platform, and apply 50 μL of photoresist on the hole;

[0068] The cross-sectional view of the samples in the above steps (1) to (5) is shown in FIG. Figure 3 shown.

[0069] (6) Place the sample obtained in step (5) into the imprint chamber and apply 0.5 MPa air pressure for 1 min to allow the photoresist to quickly fill the gap between the plastic sheet and the silicon wafer; then turn on the UV lamp for 1 min to solidify the photoresist; for the cross-sectional view of the sample in step (6), see Figure 4 shown.

[0070] (7) Peel off the plastic sheet of the sample obtained in step (6), and use a scalpel to remove the excess photoresist at the edge holes of the pattern area, and finally obtain a photoresist mask without residual glue, the structure of which is consistent with the original imprint master template (see Figure 6 The finished product cross-sectional view of step (7) is shown in FIG. Figure 5 shown.

[0071] Figures 3-5 In the figure, 1 is a fluorine-containing plastic sheet, 2 is a photoresist, and 3 is a silicon wafer.

[0072] Compared with expensive lithography machines and complex and high-precision lithography process technologies, the present invention can quickly, accurately and cost-effectively replicate the pattern of the imprint master template and transfer it to a silicon wafer, forming a photoresist mask without residual glue, greatly reducing the manufacturing cost of re-preparing the imprint master template; at the same time, the prepared photoresist mask without residual glue can be etched once through an etching process to complete the production of the imprint master template, and the pattern parameters are consistent, which is conducive to mass production of products; moreover, the method can quickly prepare the imprint master template, and contaminated or damaged master templates can be replaced in time during the mass production process, greatly improving the production line capacity.

[0073] The above description of the disclosed embodiments will enable one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not limited to the embodiments shown herein but is to be construed in the widest manner consistent with the principles and novel features disclosed herein.

Claims

1. A method for rapidly preparing a photoresist mask, comprising the following steps: a) obtaining nanostructure pattern data on a silicon master template by imprinting using a replica material to obtain an imprinted sample; b) after the edge of the embossed sample obtained in step a) is opened, the side with the nanostructure pattern data is bonded to a substrate, and then photoresist is injected into the opening to fill the gap between the embossed sample and the substrate, and then UV curing is performed to obtain a processed sample; the position of the opening is in communication with the gap formed by bonding the embossed sample and the substrate; c) peeling off the processed sample obtained in step b) from the stamped sample, and removing the photoresist at the opening to obtain a photoresist mask whose nanostructure pattern data is consistent with the silicon master template.

2. The imprinting method for rapidly preparing a photoresist mask according to claim 1, wherein: The thickness of the replication material in step a) is 0.1 mm to 1 mm.

3. The imprinting method for rapidly preparing a photoresist mask according to claim 1, wherein: The process of obtaining the nanostructure graphic data on the silicon master template by imprinting in step a) is specifically as follows: Use replication material to adhere to the silicon master template, place it in the imprinter chamber, heat it to 150℃~160℃, apply 2MPa~5MPa air pressure for 1min~5min, then cool it to room temperature and peel it off to obtain the imprinted sample.

4. The imprinting method for rapidly preparing a photoresist mask according to claim 1, wherein: The position of the opening in step b) is located at the edge of the nanostructure pattern data area of ​​the embossed sample; the length of the opening is at least 1 / 3 of the length of the nanostructure pattern area of ​​the sample.

5. The imprinting method for rapidly preparing a photoresist mask according to claim 1, wherein: The bonding process in step b) is specifically as follows: The side of the embossed sample with the nanostructured graphic data is bonded to the substrate, and bubbles are driven out with a roller. The sample is then placed in a vacuum drying dish and vacuumed to -0.1 MPa to -0.02 MPa for 2 to 8 minutes.

6. The imprinting method for rapidly preparing a photoresist mask according to claim 1, wherein: The amount of the photoresist used in step b) is 10 μL to 100 μL.

7. The imprinting method for rapidly preparing a photoresist mask according to claim 1, wherein: The process of filling the gap between the printed sample and the substrate with the photoresist in step b) is specifically as follows: Apply 0.3MPa to 0.8MPa air pressure in the stamping machine chamber for 0.5min to 2min.

8. The imprinting method for rapidly preparing a photoresist mask according to claim 1, wherein: The UV curing in step b) is performed by irradiating with a UV lamp for 0.5 to 1.5 minutes.

9. The imprinting method for rapidly preparing a photoresist mask according to claim 1, wherein: The process of removing the photoresist at the opening in step c) is specifically as follows: Use a scalpel to remove excess photoresist at the opening.

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