A test method, system, electronic device, and storage medium

Abstract

This invention discloses a testing method, system, electronic device, and storage medium applied to semiconductor laser devices. The testing method includes: powering on the semiconductor laser device; testing the semiconductor laser device for at least one time period after power-on to obtain at least one test data corresponding to that at least one time period; wherein the at least one time period is determined based on the heat conduction path of the semiconductor laser device and at least one material along the heat conduction path; and analyzing the at least one test data to obtain the test result of the semiconductor laser device. This invention can perform time-segmented performance testing on bare chips and packaged devices in the same device to evaluate the heat dissipation performance of the chip itself and the package, without the need for additional heat dissipation filling medium, thus helping to improve device screening efficiency, test repeatability, and reduce mass production testing costs.

Description

Technical Field

[0001] This invention relates to the field of semiconductor laser device technology, and in particular to a testing method, system, electronic device, and storage medium for semiconductor laser devices. Background Technology

[0002] In the application of semiconductor laser devices, semiconductor laser chips are usually packaged into different packaged devices according to different application scenarios. The quality of the packaged device is mainly evaluated based on its heat dissipation performance.

[0003] In practice, the inventors of this application have found that in the prior art, the performance testing of bare chips and packaged devices needs to be carried out separately. That is, the performance testing of bare chips and packaged devices needs to be carried out on different equipment, which is costly and time-consuming, resulting in low testing efficiency. In addition, the performance testing of packaged devices also requires the addition of heat dissipation filling medium to ensure test repeatability, which increases costs and complicates the operation process, affecting efficiency. Summary of the Invention

[0004] The main technical problem solved by this invention is to provide a testing method, system, electronic device and storage medium that can perform time-segmented performance testing on bare chips and packaged devices in the same device, reducing the corresponding evaluation time, and the testing system is equipped with a temperature control device, which significantly improves test repeatability and increases test efficiency.

[0005] To solve the above-mentioned technical problems, one technical solution adopted by the present invention is to provide a testing method applied to a semiconductor laser device, the testing method comprising: powering on the semiconductor laser device; detecting the semiconductor laser device for at least one time period after powering on to obtain at least one detection data corresponding to the at least one time period; wherein the at least one time period is determined based on the heat conduction path of the semiconductor laser device and at least one material on the heat conduction path; and analyzing the at least one detection data to obtain the test result of the semiconductor laser device.

[0006] Optionally, the semiconductor laser device includes a semiconductor laser chip; wherein, the at least one time period includes a first time period, the first time period starting from the power-on of the semiconductor laser device, and the duration of the first time period is determined based on the thermal conductivity of the semiconductor laser chip.

[0007] Optionally, the semiconductor laser device further includes a packaging structure for the semiconductor laser chip; wherein, the at least one time period further includes a second time period, the second time period starting from the end point of the first time period, and the duration of the second time period is determined based on the thermal conductivity of the packaging structure.

[0008] Optionally, the packaging structure includes a socket, a tongue, and a heat sink, wherein the tongue is connected to the socket, and the heat sink is disposed between the semiconductor laser chip and the tongue; wherein the second time period includes a third time period and a fourth time period, the third time period starts from the end point of the first time period, and the duration of the third time period is determined based on the eutectic relationship between the semiconductor laser chip and the heat sink and the thermal conductivity of the heat sink, and the fourth time period starts from the end point of the third time period, and the duration of the fourth time period is determined based on the eutectic relationship between the heat sink and the tongue and the thermal conductivity of the tongue.

[0009] Optionally, powering on the semiconductor laser device includes: powering on the semiconductor laser device using a pulsed current; wherein the first time period starts from the rising edge of the pulsed current, and the first time period, the third time period, and the fourth time period occur during the same pulsed current.

[0010] Optionally, the first time period is 1-10. 3 microseconds, the third time period is 10 3 -10 5 microseconds, the fourth time period is 10 5 -10 6 Microseconds.

[0011] Optionally, the time between two adjacent pulse currents is at least greater than the time it takes for the semiconductor laser device to cool to a preset temperature.

[0012] Optionally, the detection data includes at least one of optical power, spectrum, and voltage.

[0013] To address the aforementioned technical problems, another technical solution adopted by the present invention is as follows: a testing system is provided, comprising: a carrier device for mounting a semiconductor laser device; a drive current component connected to the carrier device for powering on the semiconductor laser device mounted on the carrier device; a detection component for detecting the powered-on semiconductor laser device to obtain detection data; and a host computer connected to the drive current component and the detection component to control the testing using the aforementioned testing method to test the semiconductor laser device.

[0014] Optionally, the carrier device includes: a device carrier module for mounting a semiconductor laser device; and a temperature control module, wherein the device carrier module is disposed on the temperature control module for temperature control of the semiconductor laser device mounted on the carrier device.

[0015] Optionally, the device carrier module and the temperature control module are detachably connected so that the device carrier module can be replaced based on the type of semiconductor laser device under test to adapt to the semiconductor laser device.

[0016] Optionally, the detection component includes: an integrating sphere for collecting the laser emitted by the semiconductor laser device after power-on; a photoelectric detection module connected to the integrating sphere for detecting the optical power of the collected laser to obtain a corresponding optical power signal; and a spectral detection module connected to the integrating sphere for performing spectral detection on the collected laser to obtain a corresponding spectral signal.

[0017] Optionally, the drive current component is further used to perform voltage detection on the semiconductor laser device to obtain a voltage signal;

[0018] Optionally, the host computer is connected to the photoelectric detection module, the spectral detection module, and the driving current component to analyze the optical power signal, the spectral signal, and the voltage signal to obtain the test results of the semiconductor laser device.

[0019] To solve the above-mentioned technical problems, another technical solution provided by the present invention is: to provide an electronic device, the electronic device comprising: a processor and a memory coupled to the processor, the memory storing a computer program, and the processor executing the computer program to implement the steps of the test method described above.

[0020] To address the aforementioned technical problems, another technical solution provided by the present invention is: to provide a computer-readable storage medium storing program data, wherein the program data, when executed by a processor, is used to implement the steps of the test method described above.

[0021] Unlike existing technologies, the testing method provided in this application includes: powering on the semiconductor laser device; testing the semiconductor laser device for at least one time period after power-on to obtain at least one test data corresponding to the at least one time period; wherein the at least one time period is determined based on the heat conduction path of the semiconductor laser device and at least one material on the heat conduction path; analyzing the at least one test data to obtain the test result of the semiconductor laser device; wherein the semiconductor laser device includes a semiconductor laser chip and a packaging structure of the semiconductor laser chip, that is, the testing method provided by this invention can realize the performance testing of the semiconductor laser chip and the packaging structure of the semiconductor laser chip, and perform performance testing in time periods according to the heat conduction path and the materials on the heat conduction path, reducing the corresponding evaluation time; and a temperature control device is provided in the testing system, so that the test can be carried out continuously, improving the testing efficiency. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Wherein:

[0023] Figure 1 This is a flowchart illustrating an embodiment of the testing method in this invention;

[0024] Figure 2 This is a flowchart illustrating another embodiment of the testing method in this invention;

[0025] Figure 3 This is a schematic diagram of the heat conduction path of the encapsulation structure in this invention during operation;

[0026] Figure 4 This is a schematic diagram of the test data of TO device power changing over time for different semiconductor laser chip performance and packaging processes in this invention;

[0027] Figure 5 This is a schematic diagram comparing the PI curves of a semiconductor laser chip with OK performance and a TO device with NG performance under pulsed current in this invention;

[0028] Figure 6 This is a schematic diagram of an embodiment of the testing system in this invention;

[0029] Figure 7 This is a schematic diagram of an embodiment of the bearing device in this invention;

[0030] Figure 8 This is a schematic diagram of an embodiment of the overall structure of the testing system in this invention;

[0031] Figure 9 This is a schematic diagram of an embodiment of the electronic device in this invention;

[0032] Figure 10 This is a schematic diagram of an embodiment of a computer-readable storage medium in this invention. Detailed Implementation

[0033] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. It is understood that the specific embodiments described herein are only for explaining this application and not for limiting it. Furthermore, it should be noted that, for ease of description, only the parts related to this application are shown in the accompanying drawings, not all structures. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0034] The reference to "embodiment" in this application means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0035] The steps in the embodiments of this application are not necessarily processed in the order described. The steps can be rearranged, deleted, or added as needed. The step descriptions in the embodiments of this application are only optional combinations of sequences and do not represent all possible combinations of steps in the embodiments of this application. The order of steps in the embodiments should not be considered as a limitation of this application.

[0036] The term "and / or" in the embodiments of this application refers to any and all possible combinations including one or more of the associated listed items. It should also be noted that, when used in this specification, "including / comprising" specifies the presence of the stated features, integers, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, and / or components and / or groups thereof.

[0037] The terms "first," "second," etc., used in this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or apparatuses.

[0038] Furthermore, although the terms "first," "second," etc., are used repeatedly in this application to describe various data (or various components, or various applications, or various instructions, or various operations), these data (or components, applications, instructions, or operations) should not be limited by these terms. These terms are only used to distinguish one piece of data (or component, application, instruction, or operation) from another piece of data (or component, application, instruction, or operation). For example, first position information can be called second position information, and second position information can be called first position information; the only difference is the scope they encompass, but it does not depart from the scope of this application. First position information and second position information are both collections of various position and attitude information, but they are not the same collection of position and attitude information.

[0039] Please see Figure 1 , Figure 1 This is a flowchart illustrating an embodiment of the testing method of the present invention. It should be noted that if substantially the same results are obtained, the method of the present invention is not necessarily identical. Figure 1 The illustrated process sequence is limited. For example... Figure 1 As shown, the method includes the following steps:

[0040] S11. Power on the semiconductor laser device;

[0041] Semiconductor laser devices include semiconductor laser chips. Semiconductor lasers, also known as laser diodes, are lasers that use semiconductor materials as their active medium.

[0042] Optionally, a pulsed current is used to power on the semiconductor laser chip.

[0043] Because pulsed current consists of periodically repeating current or voltage pulses, it may appear in the same direction or alternate between positive and negative directions. Pulsed current obtained from alternating current through rectification is also called "pulsating direct current" and "pulsating direct current voltage." Pulsed current can also be described as a unidirectional (cathode) current periodically interrupted by a series of open circuits (no current flowing through). Unlike commutated current, it does not use the plated workpiece as the anode; instead, the power supply is intermittently stopped. Due to the intermittent current interruption, the cathode potential changes periodically with time. Its waveforms include square waves, sine waves, triangular waves, and sawtooth waves.

[0044] Therefore, a pulsed current is used to power on the semiconductor laser chip, and the rising edge of the pulsed current is used as the starting point of the detection period.

[0045] S12. The semiconductor laser device is tested for at least one period of time after power-on to obtain at least one test data corresponding to the at least one period of time;

[0046] At least one time period is determined based on the heat conduction path of the semiconductor laser device and at least one material on the heat conduction path;

[0047] Heat conduction is the main mode of heat transfer in solids, which is the direct contact between objects, where heat energy is transferred directly from a high-temperature area to a low-temperature area through atomic vibrations; the heat conduction path is the path through which heat energy is transferred from a high-temperature object to a low-temperature object between objects in direct contact.

[0048] At least one time period includes the first time period;

[0049] Specifically, at least one time period includes a first time period, which starts from the power-on of the semiconductor laser chip, i.e., from the rising edge of the pulse current, and the duration of the first time period is determined based on the thermal conductivity of the semiconductor laser chip; detection is performed in the first time period to obtain the corresponding first detection data within the first time period;

[0050] Optionally, the detection data includes optical power, spectrum, and voltage, etc. In actual measurement, one of the test data can be selected for detection, or multiple test data can be selected in combination for detection.

[0051] Optionally, the first time period is 1-10. 3 In actual measurements, either 1 microsecond or 10 microseconds can be selected. 3 The measurement time is in microseconds, and any time within that range can be selected. During this period, the heat from the semiconductor laser chip has not yet been transferred to the heat sink. Therefore, the optical power, spectrum, and voltage measured during this period can be used to evaluate the characteristics of the semiconductor laser chip itself, without being affected by the thermal resistance outside the semiconductor laser chip.

[0052] In some embodiments, for example: after the semiconductor laser chip is powered on by a pulsed current, at the rising edge of the pulse... 2 Microseconds are used to perform optical power detection, spectrum detection, and voltage detection on the semiconductor laser chip to obtain the corresponding first optical power detection data, first spectrum detection data, and first voltage detection data.

[0053] S13. Analyze at least one test data to obtain the test results of the semiconductor laser device.

[0054] Among them, analyzing at least one piece of test data can be done by analyzing a single piece of test data or by analyzing a combination of multiple test data.

[0055] Specifically, the first detection data acquired within the first time period is analyzed to obtain the test results of the semiconductor laser chip; for example, after the semiconductor laser chip is powered on by the pulse current, the test results are obtained at the 10-minute mark of the pulse rising edge. 2Microseconds are used to perform optical power detection, spectral detection, and voltage detection on the semiconductor laser chip; corresponding first optical power detection data, first spectral detection data, and first voltage detection data are obtained; the first optical power detection data, first spectral detection data, and first voltage detection data obtained within this time period are analyzed to obtain the test results of the semiconductor laser chip.

[0056] Please see Figure 2 , Figure 2 This is a flowchart illustrating another embodiment of the testing method of the present invention. It should be noted that if substantially the same result is obtained, the method of the present invention is not necessarily identical. Figure 2 The illustrated process sequence is limited. For example... Figure 2 As shown, the method includes the following steps:

[0057] S21. Power on the semiconductor laser device;

[0058] Among them, semiconductor laser devices are the packaging structures of semiconductor laser chips;

[0059] In some embodiments, the packaging structure includes a socket, a tongue, and a heat sink; the tongue connects to the socket, and the heat sink is disposed between the semiconductor laser chip and the tongue.

[0060] Specifically, a pulsed current is used to power on the packaging structure of the semiconductor laser chip, and heat is spread based on the heat conduction path of the packaging structure of the semiconductor laser chip, that is, heat is spread sequentially from the semiconductor laser chip, heat sink, tube tongue, tube socket and device carrier fixture.

[0061] See Figure 3 , Figure 3 This is a schematic diagram of the heat conduction path of the semiconductor laser chip packaging structure during operation. In this diagram, the chip is a semiconductor laser chip, the TO tongue is a tube tongue, and the TO base is a tube socket.

[0062] S22. The package structure is tested in the second time period after power-on to obtain the second test data corresponding to the second time period;

[0063] The second time period is determined based on the heat conduction path of the packaging structure and the material of the packaging structure along the heat conduction path.

[0064] The second time period starts from the end of the first time period, and the duration of the second time period is determined based on the thermal conductivity of the packaging structure.

[0065] In some embodiments, the second time period includes a third time period and a fourth time period, and the second detection data includes third detection data and fourth detection data; wherein, the third time period starts from the end point of the first time period, and the duration of the third time period is determined based on the eutectic condition of the semiconductor laser chip and the heat sink and the thermal conductivity of the heat sink, and detection is performed in the third time period to obtain the corresponding third detection data within the third time period; the fourth time period starts from the end point of the third time period, and the duration of the fourth time period is determined based on the eutectic condition of the heat sink and the tube tongue and the thermal conductivity of the tube tongue, and detection is performed in the fourth time period to obtain the corresponding fourth detection data within the fourth time period.

[0066] Optionally, the tongue and the socket can be made of different materials, for example: the tongue is oxygen-free copper and the socket is SPCC. SPCC is the name of a type of steel made from cold-rolled carbon steel sheet and strip. Based on this, the duration of the fourth time period can be determined based on the eutectic condition of the heat sink and the tongue, the thermal conductivity of the tongue, and the thermal conductivity of the socket. If the tongue and the socket are in a eutectic state, the eutectic condition of the tongue and the socket also needs to be considered.

[0067] Optionally, the first time period, the third time period, and the fourth time period occur during the same pulse current.

[0068] Optionally, the time between two adjacent pulse currents is at least longer than the time it takes for the semiconductor laser chip's packaging structure to cool to a preset temperature.

[0069] Optionally, the detection data includes optical power, spectrum, and voltage, etc. In actual measurement, one of the test data can be selected for detection, or multiple test data can be selected in combination for detection.

[0070] Optionally, the third time period is 10 3 -10 5 microseconds; in actual measurements, 10 can be selected. 3 microseconds, or 10 microseconds can be selected. 3 The time interval is microseconds, and any time within that interval can be selected. During this period, the heat of the semiconductor laser chip is transferred to the heat sink, but not yet to the nozzle. Therefore, the optical power, spectrum, and voltage measured during this period can be used to evaluate the characteristics of the semiconductor laser chip itself and the characteristics of the heat sink, without being affected by the heat sink being encapsulated in the nozzle.

[0071] Optionally, the fourth time period is 10. 5 -10 6 microseconds; in actual measurements, 10 can be selected. 5 microseconds, or 10 microseconds can be selected. 6The measurement time is in microseconds, and any time within that range can be selected. During this period, the heat from the semiconductor laser chip is transferred to the socket but not yet to the test fixture. Therefore, the optical power, spectrum, and voltage measured during this period can be used to evaluate the characteristics of the semiconductor laser chip itself, the heat sink, the tongue, and the socket, without being affected by the test fixture.

[0072] In some embodiments, for example: after the pulsed current powers on the package structure of the semiconductor laser chip, during the third time period, at the rising edge of the pulse... 4 Microseconds are used to perform optical power detection, spectral detection, and voltage detection on the package structure, obtaining corresponding third optical power detection data, third spectral detection data, and third voltage detection data; in the fourth time period, at the rising edge of the pulse, 3.5 × 10 5 Microseconds are used to perform optical power detection, spectral detection, and voltage detection on the package structure to obtain the corresponding fourth optical power detection data, fourth spectral detection data, and fourth voltage detection data.

[0073] S23. Analyze the second test data to obtain the test results of the packaging structure.

[0074] The analysis of the second detection data can be performed on one of the detection data or on a combination of multiple detection data.

[0075] Specifically, the second detection data acquired during the second time period is analyzed to obtain the test results of the semiconductor laser chip packaging structure. The second time period includes a third time period and a fourth time period, and the second detection data includes third and fourth detection data. For example, after the semiconductor laser chip packaging structure is powered on by a pulsed current, the 10 data points at the rising edge of the pulse during the third time period are acquired. 4 The third detection data is obtained by detecting the package structure in microseconds, and the third detection data is obtained at the rising edge of the pulse in the fourth time period, which is 3.5 × 10. 5 The fourth detection data obtained by microsecond-level detection of the package structure is analyzed to obtain the test results of the package structure. The third detection data includes the third optical power detection data, the third spectral detection data, and the third voltage detection data. The fourth detection data includes the fourth optical power detection data, the fourth spectral detection data, and the fourth voltage detection data.

[0076] Performance testing results show that the output of the semiconductor laser chip gradually decreases as heat accumulates, mainly because the increased temperature of the semiconductor laser chip reduces the gain coefficient of the quantum well material. Poor packaging processes can prevent the heat generated by the chip from being quickly conducted to the next layer, leading to an increase in the chip junction temperature and a rapid decrease in output optical power. If the chip itself has poor performance, the low output optical power of a defective chip can be detected even in the initial power-on stage.

[0077] See Figure 4 , Figure 4 This is a schematic diagram illustrating the power variation over time for TO devices with different semiconductor laser chip performance and packaging processes. Compared to devices with good chip performance and packaging process, devices with poor packaging process will experience a faster decrease in output optical power over time. Conversely, devices with poor chip performance will have lower output optical power from the initial stage. Specifically: if both chip performance and packaging process are poor, the initial output optical power will be low and decrease rapidly; if chip performance is poor but packaging process is good, the initial output optical power will be low and decrease normally; if chip performance is good but packaging process is poor, the initial output optical power will be normal and decrease relatively quickly; if both chip performance and packaging process are good, the initial output optical power will be normal and decrease normally.

[0078] Additionally, the performance of a chip can be assessed by comparing the PI curves of the devices using short-pulse width testing. (See [link to relevant documentation]). Figure 5 , Figure 5 This is a schematic diagram comparing the PI curves of a semiconductor laser chip with OK performance and a non-OK performance TO device under pulsed current. The slope efficiency of the TO device with non-OK chip performance will be lower than that of the chip with OK performance.

[0079] Please see Figure 6 , Figure 6 This is a schematic diagram of an embodiment of the testing system of the present invention. In this embodiment, the testing system 300 includes: a bearing device 310, a driving current component 320, a detection component 330, and a host computer 340.

[0080] The carrier device 310 is used to mount the semiconductor laser device; the drive current component 320 is connected to the carrier device 310 and is used to power on the semiconductor laser device mounted on the carrier device 310; the detection component 330 is used to detect the semiconductor laser device after power-on and obtain detection data; the host computer 340 is connected to the drive current component 320 and the detection component 330 to control the semiconductor laser device using the test method described above.

[0081] Optionally, see Figure 7 , Figure 7This is a schematic diagram of an embodiment of the carrier device of the present invention. The carrier device 310 includes: a device carrier module 311 and a temperature control module 312. The device carrier module 311 is used to mount a semiconductor laser device, and the device carrier module is disposed on the temperature control module 312. The temperature control module is used to control the temperature of the semiconductor laser device mounted on the carrier device.

[0082] In some embodiments, the temperature control module 312 includes a chiller, a water-cooling module, and a thermoelectric cooler (TEC) connected in sequence, with the TEC connecting to a device carrier module 311; wherein, the chiller is used to provide cooling water to the water-cooling module, the water-cooling module is used to remove heat from the non-working surface of the TEC, and the TEC is used to control the temperature of the device carrier module.

[0083] Optionally, the device carrier module 311 and the temperature control module 312 are detachably connected so that the device carrier module can be replaced according to the type of semiconductor laser device under test to adapt to the semiconductor laser device; for example, the device carrier module 311 includes a device carrier module with a semiconductor laser chip and a device carrier module based on the packaging structure of the semiconductor laser chip, and then, for actual measurement, it can be replaced with the corresponding device carrier module according to chip testing or packaging structure testing.

[0084] Optionally, the drive current component 320 can be an LD drive current source for powering semiconductor laser devices.

[0085] Optionally, the detection component 330 includes: an integrating sphere, a photoelectric detection module, and a spectral detection module; wherein, the integrating sphere is used to collect the laser emitted by the semiconductor laser device after power-on, the photoelectric detection module is connected to the integrating sphere and is used to perform optical power detection on the collected laser to obtain the corresponding optical power signal, and the spectral detection module is connected to the integrating sphere and is used to perform spectral detection on the collected laser to obtain the corresponding spectral signal.

[0086] In some embodiments, the photodetector module can be a photodetector connected to a PD amplifier, which amplifies the current signal output by the photodetector and converts it into a voltage signal.

[0087] In some embodiments, the spectral detection module can be a spectrometer.

[0088] In some embodiments, a data acquisition module is also included. The data acquisition module is connected to the photoelectric detection module, the spectral detection module, the drive current component and the host computer. The data acquisition module is used to acquire the optical power signal detected by the photoelectric detection module, the spectral signal detected by the spectral detection module and the voltage signal detected by the drive current component, and transmit the acquired signals to the host computer.

[0089] In some embodiments, the host computer is connected to the photoelectric detection module, the spectral detection module, and the drive current component to analyze the optical power signal, spectral signal, and voltage signal to obtain the test results of the semiconductor laser device.

[0090] In some embodiments, the overall structure of the test system is as follows: Figure 8 As shown, that is Figure 8 This is a schematic diagram of an embodiment of the overall structure of the testing system in this invention. The testing system includes a chiller, a water-cooling module, a semiconductor cooler (TEC), a device carrier, an integrating sphere, a photodetector, a PD amplifier, a spectrometer, an LD drive current source, a data acquisition module, and a host computer. The chiller, water-cooling module, and semi-monomeric cooler (TEC), connected in sequence, constitute a temperature control module 312, used for temperature control of the semiconductor laser device mounted on the device carrier. The device carrier is detachably connected to the temperature control module 312, allowing the device carrier module to be replaced based on the type of semiconductor laser device under test to adapt to the semiconductor laser device. The integrating sphere, and the photodetector and spectrometer connected to the integrating sphere respectively, constitute a detection component 330, used to detect the acquired laser data. The system performs spectral detection to obtain the corresponding spectral signal and optical power detection to obtain the corresponding optical power signal. The photodetector is connected to a PD amplifier, which amplifies the current signal output by the photodetector and converts it into a voltage signal. The LD driving current source is a photodetector used to power the semiconductor laser device. The data acquisition module connects the PD amplifier, spectrometer, LD driving current source, and host computer to acquire the optical power signal detected by the photodetector, the spectral signal detected by the spectrometer, and the voltage signal detected by the LD driving current source, and transmits the acquired signals to the host computer. The host computer connects to the photodetector, spectrometer, and LD driving current source to analyze the optical power signal, spectral signal, and voltage signal to obtain the test results of the semiconductor laser device.

[0091] Please see Figure 9 , Figure 9 This is a schematic diagram of an embodiment of the electronic device of the present invention. The electronic device 400 includes a processor 401 and a memory 402 coupled to the processor, and the memory stores a computer program. When the processor executes the computer program, it can perform the steps in the above-described test method. For relevant details, please refer to the detailed description in the above-described test method, which will not be repeated here.

[0092] Optionally, the electronic device can be a host computer; for example, when the host computer executes a computer program, it can perform the steps in the above test method. For relevant details, please refer to the detailed description in the above test method, which will not be repeated here.

[0093] Please see Figure 10 , Figure 10 This is a schematic diagram of a computer-readable storage medium according to an embodiment of the present invention. The computer-readable storage medium 500 stores a computer program 501, which, when executed by a processor, implements the steps performed in the above-described test method. For related details, please refer to the detailed description in the above-described test method, which will not be repeated here.

[0094] The above solution, unlike existing technologies, involves powering on the semiconductor laser device; testing the semiconductor laser device for at least one period after power-on to obtain at least one set of test data corresponding to that period; wherein the at least one period is determined based on the heat conduction path of the semiconductor laser device and at least one material along the heat conduction path; and analyzing the at least one set of test data to obtain the test results of the semiconductor laser device. The semiconductor laser device includes a semiconductor laser chip and a packaging structure for the semiconductor laser chip. Therefore, the testing method provided by this invention can perform performance testing on the semiconductor laser chip and its packaging structure, and performs performance testing in time periods based on the heat conduction path and the materials along the heat conduction path, reducing the corresponding evaluation time. Furthermore, a temperature control device is provided in the testing system, enabling continuous testing and improving testing efficiency.

[0095] In the several embodiments provided by this invention, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the system embodiments described above are merely illustrative; for instance, the division of modules or units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection through some interfaces, apparatuses, or units, and may be electrical, mechanical, or other forms.

[0096] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment, depending on actual needs.

[0097] Furthermore, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0098] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) or processor to execute all or part of the steps of the methods described in the various embodiments of the present invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0099] The above description is merely an embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural or procedural transformations made based on the content of the present invention specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of the present invention.

Claims

1. A testing method, characterized in that, The test method, applied to semiconductor laser devices, includes: Powering on the semiconductor laser device, wherein the semiconductor laser device includes a semiconductor laser chip and a packaging structure for the semiconductor laser chip; The semiconductor laser device is tested for at least one period of time after power-on to obtain at least one test data corresponding to the at least one period of time; wherein, the at least one period of time is determined based on the heat conduction path of the semiconductor laser device and the heat conduction capability of at least one material on the heat conduction path; the at least one period of time includes a first period of time and a second period of time, wherein the first period of time starts from the power-on of the semiconductor laser device, and the duration of the first period of time is determined based on the heat conduction capability of the semiconductor laser chip, and the first period of time is 1-10. 3 Microseconds; the second time period starts from the end point of the first time period, and the duration of the second time period is determined based on the thermal conductivity of the packaging structure; The at least one piece of detection data is analyzed to obtain the test results of the semiconductor laser device.

2. The method according to claim 1, characterized in that, The packaging structure includes a socket, a tongue, and a heat sink. The tongue is connected to the socket, and the heat sink is disposed between the semiconductor laser chip and the tongue. The second time period includes a third time period and a fourth time period. The third time period starts from the end point of the first time period and its duration is determined based on the eutectic relationship between the semiconductor laser chip and the heat sink and the thermal conductivity of the heat sink. The fourth time period starts from the end point of the third time period and its duration is determined based on the eutectic relationship between the heat sink and the tube tongue and the thermal conductivity of the tube tongue.

3. The method according to claim 2, characterized in that, The power-on of the semiconductor laser device includes: The semiconductor laser device is powered on using a pulsed current; The first time period starts from the rising edge of the pulse current, and the first time period, the third time period, and the fourth time period are during the same pulse current.

4. The method according to claim 3, characterized in that, The third time period is 10. 3 -10 5 microseconds, the fourth time period is 10 5 -10 6 Microseconds.

5. The method according to claim 3, characterized in that, The time between two adjacent pulse currents is at least greater than the time it takes for the semiconductor laser device to cool to a preset temperature.

6. The method according to any one of claims 1-5, characterized in that, The detection data includes at least one of optical power, spectrum, and voltage.

7. A testing system, characterized in that, The testing system includes: A support device for mounting semiconductor laser devices; A drive current component, connected to the carrier device, is used to power on the semiconductor laser device mounted on the carrier device; A detection component is used to detect the semiconductor laser device after it is powered on and obtain detection data; A host computer is connected to the drive current component and the detection component to control the semiconductor laser device using the method described in any one of claims 1-6.

8. The testing system according to claim 7, characterized in that, The supporting device includes: Device carrier module, used to mount semiconductor laser devices; A temperature control module is provided, and the device carrier module is disposed on the temperature control module for temperature control of the semiconductor laser device mounted on the carrier device.

9. The testing system according to claim 8, characterized in that, The device carrier module and the temperature control module are detachably connected so that the device carrier module can be replaced according to the type of semiconductor laser device under test to adapt to the semiconductor laser device.

10. The testing system according to claim 7, characterized in that, The detection component includes: An integrating sphere is used to collect the laser emitted by the semiconductor laser device after it is powered on. A photoelectric detection module, connected to the integrating sphere, is used to detect the optical power of the collected laser light to obtain the corresponding optical power signal; A spectral detection module, connected to the integrating sphere, is used to perform spectral detection on the collected laser light to obtain the corresponding spectral signal; The driving current component is also used to perform voltage detection on the semiconductor laser device to obtain a voltage signal; The host computer is connected to the photoelectric detection module, the spectral detection module, and the driving current component to analyze the optical power signal, the spectral signal, and the voltage signal to obtain the test results of the semiconductor laser device.

11. An electronic device, characterized in that, The electronic device includes: a processor and a memory coupled to the processor, the memory storing a computer program, the processor executing the computer program to implement the steps of the method as claimed in any one of claims 1-6.

12. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores program data, which, when executed by a processor, is used to implement the steps of the method as described in any one of claims 1-6.

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