A cable for improving interface matching characteristics and a preparation method thereof

Abstract

The present application discloses a cable for improving interface matching characteristics and a preparation method thereof, aiming to solve the technical problem that the existing cable affects the operation safety due to the loose interface combination between the insulating layer and the semi-conductive layer. The cable includes: a semi-conductive layer and an insulating layer; the semi-conductive layer is disposed inside the insulating layer, and the semi-conductive layer is in contact with the insulating layer; a first nano-ring layer is disposed on the contact interface of the insulating layer, and the material of the first nano-ring layer is the same as that of the insulating layer; a second nano-ring layer is disposed on the contact interface of the semi-conductive layer, and the material of the second nano-ring layer is the same as that of the semi-conductive layer; the semi-conductive layer and the insulating layer are in contact through the first nano-ring layer and the second nano-ring layer.

Description

Technical Field

[0001] This application relates to the technical field of power cables, and particularly to a cable for improving interface matching characteristics and a preparation method thereof. Background Art

[0002] The tightness and smoothness of the interface between the semiconductive layer and the insulating layer of a cable are key issues affecting the overall safe operation of the cable. The main function of the semiconductive layer is to homogenize the electric field. In an ideal state, the inner and outer surfaces of the semiconductive layer, especially the contact surface with the insulating layer, should be super-smooth interfaces. According to statistics, the proportion of cable failures induced by extreme environments in high-voltage DC cables is relatively high. Among them, the positions where the contact between the semiconductive layer / insulating layer is not tight or the interface electric field is distorted are the ones where more failures are caused. The non-tight interface contact means that defects such as delamination and air gaps occur at the interface with the bending of the cable; the electric field distortion is caused by the protrusion of conductive particles on the surface of the semiconductive layer, which ultimately leads to the breakdown of the insulating layer under the rated voltage or below the rated voltage, and the insulation fails. The discharge caused by interface defects or electric field distortion will induce changes in the interface performance between the cable body and the main insulation, and easily trigger operation accidents of high-voltage DC cables.

[0003] Therefore, aiming at the phenomenon of space charge accumulation in the insulating layer caused by non-tight interface contact and local electric field distortion, a method for improving the smoothness of the semiconductive layer / insulating layer interface is proposed from the interface perspective, which has long-term significance for the safe and stable operation of the cable. Summary of the Invention

[0004] An embodiment of this application provides a cable for improving interface matching characteristics and a preparation method thereof, so as to solve the technical problem that the existing cable affects the operation safety due to the non-tight combination of the insulating layer and the semiconductive layer interface.

[0005] On the one hand, an embodiment of this application provides a cable for improving interface matching characteristics, including: a semiconductive layer and an insulating layer; the semiconductive layer is disposed inside the insulating layer, and the semiconductive layer is in contact with the insulating layer; a first nano-ring layer is disposed on the contact interface of the insulating layer, and the material of the first nano-ring layer is the same as that of the insulating layer; a second nano-ring layer is disposed on the contact interface of the semiconductive layer, and the material of the second nano-ring layer is the same as that of the semiconductive layer; the semiconductive layer and the insulating layer are in contact through the first nano-ring layer and the second nano-ring layer.

[0006] In one or more embodiments of this specification, the first nano-ring layer is composed of 2 - 3 layers of nano-rings arranged, and the second nano-ring layer is composed of 2 - 3 layers of nano-rings arranged; the diameter of the nano-ring is 1 - 10 nm.

[0007] In one or more embodiments of the present specification, the nano-ring is a hollow nano-ring, and the ratio of the inner diameter to the outer diameter of the hollow nano-ring is 3:4; the hollow nano-ring is filled with an elastic material, and the elastic material is rubber.

[0008] In one or more embodiments of the present specification, the cable further includes a graphene layer; the graphene layer is disposed between the semiconductive layer and the insulating layer; the inner contact interface of the graphene layer contacts the semiconductive layer through the second nano-ring layer, and the outer contact interface of the graphene layer contacts the insulating layer through the first nano-ring layer.

[0009] In one or more embodiments of the present specification, the graphene layer adopts a nano-porous layered structure; the pore diameter of the nano-pores is determined according to the diameter of the conductive particle protrusions on the contact interface of the semiconductive layer.

[0010] In one or more embodiments of the present specification, when the conductive particle protrusions are irregular in shape, the pore diameter of the nano-pores is determined according to the maximum side length of the irregular shape.

[0011] On the other hand, an embodiment of the present application further provides a method for manufacturing a cable to improve the interface matching characteristics, including: forming an insulating layer, and forming a first nano-ring layer on the inner side surface of the insulating layer; wherein, the material of the first nano-ring layer is the same as the material used for the insulating layer; forming a second nano-ring layer on the inner side surface of the first nano-ring layer; forming a semiconductive layer on the inner side surface of the second nano-ring layer; wherein, the material of the second nano-ring layer is the same as the material used for the semiconductive layer.

[0012] In one or more embodiments of the present specification, after forming the first nano-ring layer, the method further includes: coating a single layer of graphene on the inner side surface of the first nano-layer to form a graphene layer; forming a second nano-ring layer on the inner side surface of the graphene layer.

[0013] In one or more embodiments of the present specification, before forming the graphene layer, the method further includes: determining the shape of the conductive particle protrusions on the outer side surface of the semiconductive layer; when the shape of the conductive particle protrusions is a regular shape, determining the pore diameter of the graphene layer as the diameter of the regular shape; wherein, the regular shape is a hemispherical shape; and, when the shape of the conductive particle protrusions is an irregular shape, determining the pore diameter of the graphene layer as the maximum side length of the irregular shape.

[0014] In one or more embodiments of the present specification, before forming the first nano-ring layer, the method further includes: determining the material of the hollow nano-ring according to the material of the insulating layer; filling the hollow nano-ring with rubber; and forming the first nano-ring layer by using a plurality of the filled hollow nano-rings.

[0015] A cable for improving interface matching characteristics provided by an embodiment of the present application forms a first nano-ring layer on the inner contact surface of the insulating layer and a second nano-ring layer on the outer contact surface of the semi-conductive layer, so that the insulating layer and the semi-conductive layer do not directly contact, but contact through the nano-ring layer, which not only improves the smoothness and softness of the contact interface, but also can play a role in preventing interface discharge. In addition, the nano-ring layer in the embodiment of the present application can be composed of hollow nano-rings, and an elastic material, such as rubber, can be filled in the hollow nano-rings to further soften the contact interface and improve the interface's ability to resist deformation. At the same time, a graphene layer can also be coated between the semi-conductive layer and the insulating layer, and the graphene layer can be coated with one or more layers according to needs, which can also play a role in preventing interface discharge. At the same time, a plurality of nano-pores can be provided on the graphene layer, and the pore diameter thereof can be determined according to the protrusions of the conductive particles of the semi-conductive layer to smooth the protrusions of the conductive particles, thereby playing a role in smoothing the contact interface and improving the interface matching characteristics. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The schematic embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation of the present application. In the drawings:

[0017] Figure 1 is a partial structural schematic diagram of a cable for improving interface matching characteristics provided by an embodiment of the present application. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0018] To make the objectives, technical solutions, and advantages of the present application clearer, the technical solutions of the present application will be clearly and completely described below in conjunction with specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0019] The technical solutions proposed in the embodiments of the present application will be described in detail below with reference to the drawings.

[0020] Figure 1 is a partial structural schematic diagram of a cable for improving interface matching characteristics provided by an embodiment of the present application. As Figure 1 shown, the cable includes a semi-conductive layer 1 and an insulating layer 5.

[0021] As Figure 1As shown, the semiconductive layer 1 is disposed inside the insulating layer 5. In the embodiments of the present application, the outer or outside refers to the layer position farther from the cable conductor core, and the inner or inside refers to the layer position closer to the cable conductor core. Moreover, there are also a second nanoring layer 2, a graphene layer 3, and a first nanoring layer 4 between the semiconductive layer 1 and the insulating layer 5. The first nanoring layer 4 is disposed on the inner side of the insulating layer 5, and the second nanolayer 2 is disposed on the outer side of the semiconductive layer 1. In this way, when the semiconductive layer 1 and the insulating layer 5 are in contact, they do not directly contact but contact through the two nanoring layers, so that the contact interface is smoother. When the cable is bent, the contact interface between the two layers is not prone to cracking and other situations, thereby improving the interface matching characteristics. The interface matching characteristics in the embodiments of the present application refer to the smoothness and other characteristics of the contact interface between the semiconductive layer and the insulating layer, that is, the smoother the interface, the better the interface matching characteristics, and the less likely the interface is to discharge.

[0022] Furthermore, there is also a graphene layer 3 between the first nanoring layer 4 and the second nanoring layer 2, and the graphene layer can also prevent interface discharge. However, if only the graphene layer is added between the semiconductive layer 1 and the insulating layer 5, since the thickness of a single-layer graphene is generally 0.35 nm, there will also be defects such as poor bonding and easy generation of air gaps. Therefore, in the embodiments of the present application, after the nanoring layers are respectively disposed on the contact interface between the semiconductive layer 1 and the insulating layer 5, the graphene layer 3 will continue to be coated between the two to improve the flexibility / matching characteristics of the contact interface and also play a role in preventing interface discharge.

[0023] In one or more embodiments of this specification, the graphene layer 3 can be coated with a single layer or multiple layers as needed. However, regardless of the number of layers coated, each layer of the graphene layer will adopt the same structure. In an example of the present application, the graphene layer 4 adopts a nanoporous layered structure, that is, as Figure 1 shown in FIG. 3-1, there are several nanopores on the graphene layer 4, and the pore diameter of the nanopores can be determined according to the diameter of the conductive particle protrusions on the semiconductive layer 1. Because generally, the shape of the conductive particle protrusions is hemispherical, therefore, in the embodiments of the present application, the nanopore diameter on the graphene layer 4 can be determined according to the diameter of the hemispherical shape. It should be noted that the nanopore diameter is generally slightly larger than the diameter of the conductive particle protrusions, so that the nanopores can enclose the conductive particle protrusions to play a role in smoothing the conductive particle protrusions.

[0024] Further, when the protrusion of the conductive particles is not a regular shape, that is, not a regular hemispherical protrusion but an irregular shape, the nano-pore diameter on the graphene layer 4 can be determined according to the maximum side length of the irregular shape. It should also be noted that the nano-pore diameters on the graphene layer 4 are not necessarily all exactly the same. Each nano-pore diameter can be different from each other, or some can be the same, as long as the protrusions of the conductive particles on the semi-conductive layer 1 can be smoothed, that is, each pore diameter can enclose the protrusion of the conductive particle one by one.

[0025] In one or more embodiments of the present specification, the first nano-ring layer is composed of several nano-rings, and these several nano-rings can be hollow nano-rings, and an elastic material, such as rubber, is filled in the hollow nano-rings. Similarly, the second nano-ring layer is also composed of several nano-rings, and the several nano-rings can be hollow nano-rings, and an elastic material, such as rubber, is filled in the hollow nano-rings to improve the ability of the contact interface to resist deformation. As Figure 1 shown, 2-1 is a partially enlarged view of a nano-ring in the second nano-ring layer, 4-1 is a partially enlarged view of a nano-ring in the first nano-ring layer, and the white particles in 2-1 and 4-1 are the filled elastic materials, such as rubber.

[0026] To ensure good elasticity of the contact interface, both the first nano-ring layer and the second nano-ring layer can be arranged by 2-3 layers of nano-rings, and the thickness of each layer of nano-rings can be 1-10 nm. That is to say, the outer diameter of the nano-rings in the embodiments of the present application is 1-10 nm, (one layer of nano-rings includes several nano-rings arranged flat, but in terms of thickness, there is only one nano-ring), and the ratio of the inner diameter to the outer diameter of the nano-ring can be 3:4.

[0027] The above is the cable embodiment in the embodiments of the present application. Based on the same inventive concept, the embodiments of the present application also provide a method for manufacturing a cable with improved interface matching characteristics.

[0028] In one or more embodiments of the present specification, the method includes: forming an insulating layer, and forming a first nano-ring layer on the inner side surface of the insulating layer; wherein, the material of the first nano-ring layer is the same as the material used for the insulating layer; forming a second nano-ring layer on the inner side surface of the first nano-ring layer; forming a semi-conductive layer on the inner side surface of the second nano-ring layer; wherein, the material of the second nano-ring layer is the same as the material used for the semi-conductive layer.

[0029] In one or more embodiments of the present specification, after forming the first nano-ring layer, the method further includes: coating a single-layer graphene on the inner side surface of the first nano-layer to form a graphene layer; forming a second nano-ring layer on the inner side surface of the graphene layer.

[0030] In one or more embodiments of the present specification, before forming the graphene layer, the method further includes: determining the shape of the conductive particle protrusion on the outer side surface of the semiconductive layer; when the shape of the conductive particle protrusion is a regular shape, determining that the aperture of the graphene layer is the diameter of the regular shape; wherein, the regular shape is a hemispherical shape; and, when the shape of the conductive particle protrusion is an irregular shape, determining that the aperture of the graphene layer is the maximum side length of the irregular shape.

[0031] In one or more embodiments of the present specification, before forming the first nano-ring layer, the method further includes: determining the material of the hollow nano-ring according to the material of the insulating layer; filling rubber into the hollow nano-ring; and forming the first nano-ring layer by using a plurality of the filled hollow nano-rings.

[0032] Further, the filled rubber can expand when heated, making the interface contact better, and the reason for its heating is the energization of the cable.

[0033] Each embodiment in the present application is described in a progressive manner. For the same or similar parts among the embodiments, reference can be made to each other. Each embodiment focuses on the differences from other embodiments. In particular, for the method embodiments, since they are basically similar to the cable embodiments, the description is relatively simple, and for the relevant parts, reference can be made to the partial description of the method embodiments.

[0034] It should also be noted that the term "comprising", "including" or any other variant thereof is intended to cover a non-exclusive inclusion, so that a process, method, commodity or device including a series of elements not only includes those elements but also includes other elements not explicitly listed, or further includes elements inherent to such process, method, commodity or device. Without further limitation, an element defined by the statement "including one..." does not exclude the existence of another identical element in the process, method, commodity or device including the element.

[0035] The above are only the embodiments of the present application and are not used to limit the present application. For those skilled in the art, various changes and modifications can be made to the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included within the scope of the claims of the present application.

Claims

1. A cable for improving interface matching characteristics, characterized in that, The cable includes: a semiconductive layer and an insulating layer; The semiconductive layer is disposed inside the insulating layer, and the semiconductive layer is in contact with the insulating layer; A first nano-ring layer is disposed on the contact interface of the insulating layer, and the material of the first nano-ring layer is the same as that of the insulating layer; A second nano-ring layer is disposed on the contact interface of the semiconductive layer, and the material of the second nano-ring layer is the same as that of the semiconductive layer; The semiconductive layer and the insulating layer are in contact through the first nano-ring layer and the second nano-ring layer; The cable further includes a graphene layer, and the graphene layer is disposed between the semiconductive layer and the insulating layer; The outer contact interface of the graphene layer is in contact with the insulating layer through the first nano-ring layer, and the inner contact interface of the graphene layer is in contact with the semiconductive layer through the second nano-ring layer; The graphene layer adopts a nano-porous layered structure, and the pore diameter of the nano-pores is determined according to the diameter of the conductive particle protrusions on the contact interface of the semiconductive layer. Among them, the conductive particle protrusions are in irregular shapes, and the pore diameter of the nano-pores is determined according to the maximum side length of the irregular shapes.

2. The cable for improving interface matching characteristics according to claim 1, wherein The first nano-ring layer is formed by arranging 2 or 3 nano-rings, and the second nano-ring layer is formed by arranging 2 or 3 nano-rings; The diameter of the nano-ring is 1-10 nm.

3. The cable for improving interface matching characteristics according to claim 2, wherein The nano-ring is a hollow nano-ring, and the ratio of the inner diameter to the outer diameter of the hollow nano-ring is 3:4; The hollow nano-rings are all filled with an elastic material, and the elastic material is rubber.

4. A method for preparing a cable to improve the interface matching characteristics, characterized in that, The method includes: Forming an insulating layer, and forming a first nano-ring layer on the inner side surface of the insulating layer; wherein, the material of the first nano-ring layer is the same as that of the insulating layer; Forming a second nano-ring layer on the inner side surface of the first nano-ring layer; Forming a semiconductive layer on the inner side surface of the second nano-ring layer; wherein, the material of the second nano-ring layer is the same as that of the semiconductive layer; The method further includes: Coating a single layer of graphene on the inner side surface of the first nano-layer to form a graphene layer; Forming a second nano-ring layer on the inner side surface of the graphene layer; Determining the shape of the conductive particle protrusions on the outer side surface of the semiconductive layer; When the shape of the conductive particle protrusions is a regular shape, determining the pore diameter of the graphene layer as the diameter of the regular shape; wherein, the regular shape is a hemispherical shape; and when the shape of the conductive particle protrusions is an irregular shape, determining the pore diameter of the graphene layer as the maximum side length of the irregular shape.

5. The method for preparing a cable for improving the interface matching characteristics according to claim 4, wherein Before forming the first nano-ring layer, the method further includes: Determining the material of the hollow nano-ring according to the material of the insulating layer; Filling rubber in the hollow nano-ring; Forming the first nano-ring layer by using a plurality of the filled hollow nano-rings.

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