Semiconductor device and power conversion device

Abstract

A semiconductor device (100) comprises a semiconductor element (1), a first lead frame (2), a second lead frame (3), a heat conducting component (8), and a sealing component (9) for sealing the components. The first lead frame comprises: a first portion (2a) exposed from a first side surface (9A) of the sealing component; a second portion (2b) arranged closer to the lower surface side than the first portion in a second direction (Z) intersecting a lower surface (9C) of the sealing component; and a third portion (2c) connecting the first portion and the second portion and inclined relative to each of the first portion and the second portion. The second lead frame comprises: a fourth portion (3a) exposed from a second side surface (9B) of the sealing component; and a fifth portion (3b) arranged at a distance from the second portion. The semiconductor element is mounted on the upper surface of the second portion. The semiconductor device further comprises: an intermediate frame (4) arranged between the second portion and the fifth portion at least in the second direction and carrying an element constituting a part of a wiring circuit including the first and second lead frames. A distance (L1) between the second portion and the intermediate frame in the first direction (X) is shorter than a distance (h1) between an upper surface of the first portion and an upper surface of the second portion in the second direction.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device and a power conversion device. Background Art

[0002] A transfer molded semiconductor device (hereinafter referred to as a semiconductor device) is manufactured using a mold that is movable in the up and down directions, and comprises: a first lead frame exposed from a first side surface of a sealing component; and a second lead frame exposed from a second side surface of the sealing component that is opposite to the first side surface.

[0003] In addition, in order to dissipate the heat generated by the semiconductor element, a general semiconductor device includes a heat-conducting component that is thermally connected to the semiconductor element and partially exposed from the sealing component, and the heat-conducting component is thermally connected to a metal cooler. Therefore, in a semiconductor device requiring high voltage resistance, it is necessary to ensure an insulation distance (i.e., a spatial distance and a surface distance) between each of the first and second lead frames exposed from the sealing component and the heat-conducting component.

[0004] In a general semiconductor device, a portion of the first lead frame is disposed between the semiconductor element and the heat conducting component. Therefore, in such a semiconductor device, the first lead frame is bent to ensure an insulation distance. Specifically, an inclined portion is formed between the portion exposed from the sealing component and the portion disposed between the semiconductor element and the heat conducting component in the first lead frame by bending, and the inclined portion is inclined relative to the two portions. The length of the inclined portion is set according to the required insulation distance.

[0005] Furthermore, Japanese Patent Application Laid-Open No. 6-196602 (Patent Document 1) discloses a method for manufacturing a semiconductor device in which two lead terminals are stacked with a semiconductor chip sandwiched therebetween.

[0006] Prior art literature

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent Application Laid-Open No. 6-196602 Summary of the invention

[0009] The first lead frame and the second lead frame of the semiconductor device are generally formed of one plate-like component. Specifically, first, the first lead frame and the second lead frame are integrally formed by stamping and bending the plate-like component. Then, after a portion of each of the first lead frame and the second lead frame is sealed by a sealing component, the other portion of the two components exposed from the sealing component is cut off. Thus, the first lead frame and the second lead frame are independent.

[0010] In this case, the longer the length of the inclined portion of the first lead frame is, the longer the distance between the first lead frame and the second lead frame is. That is, in the conventional semiconductor device, it is difficult to further reduce the size while ensuring the insulation distance.

[0011] Furthermore, even when the method for manufacturing a semiconductor device described in Patent Document 1 is applied to a package having a plurality of terminals, it is difficult to further reduce the size while ensuring the insulation distance in a semiconductor device having a large number of terminals.

[0012] A main object of the present invention is to provide a semiconductor device that can ensure an insulation distance and is smaller than conventional semiconductor devices, and a power conversion device including the semiconductor device.

[0013] The semiconductor device disclosed herein comprises a semiconductor element, a first lead frame, a second lead frame, a heat-conducting component, and a sealing component that seals the semiconductor element, the first lead frame, the second lead frame, and the heat-conducting component. The sealing component has a first side surface and a second side surface that face opposite sides to each other in a first direction, and a lower surface that extends along the first direction. The first lead frame includes: a first part that is exposed from the first side surface; a second part that is arranged closer to the lower surface side than the first part in a second direction that intersects the lower surface; and a third part that electrically connects the first part and the second part and is inclined relative to each of the first part and the second part. The second lead frame includes: a fourth part that is exposed from the second side surface; and a fifth part that is arranged at a distance from the second part in the first direction and the second direction. The second part, the third part, and the fifth part are sealed by the sealing component. The semiconductor element is mounted on the upper surface of the second part. The heat-conducting component has a portion that is arranged on the side opposite to the semiconductor element relative to the second part, is thermally connected to the second part, and is exposed from the lower surface. The semiconductor device further includes an intermediate frame, which is disposed between the second portion and the fifth portion at least in the second direction and carries an element constituting a portion of a wiring circuit including the first lead frame and the second lead frame. A distance between the second portion and the intermediate frame in the first direction is shorter than a distance between an upper surface of the first portion and an upper surface of the second portion in the second direction.

[0014] According to the present disclosure, it is possible to provide a semiconductor device that can ensure an insulation distance and is more compact than conventional semiconductor devices, and a power conversion device including the semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a top view of the semiconductor device according to the first embodiment.

[0016] Figure 2 It is shown Figure 1 FIG. 1 is a top view of the interior of a sealing member of a semiconductor device shown.

[0017] Figure 3 is from Figure 2 Cross-sectional view observed along line segment III-III.

[0018] Figure 4 is from Figure 2 End view observed along line segment IV-IV.

[0019] Figure 5 It is shown Figure 2 to Figure 5 A partial top view of one process step of a method for manufacturing a semiconductor device is shown.

[0020] Figure 6 is from Figure 5 Cross-sectional view observed along line segment VI-VI.

[0021] Figure 7 It is shown Figure 2 to Figure 5 The method for manufacturing a semiconductor device shown in Figure 5 A partial top view of a process step after the process shown.

[0022] Figure 8 is from Figure 7 Cross-sectional view observed along line segment VIII-VIII.

[0023] Fig. 9 It is shown Figure 2 to Figure 5 The method for manufacturing a semiconductor device shown in Figure 7 A partial top view of a process step after the process shown.

[0024] Fig.10 is from Fig. 9 Cross-sectional view observed along line segment XX.

[0025] Fig.11 This is a partial plan view showing the interior of a sealing member of a semiconductor device according to the second embodiment.

[0026] Fig.12 is from Fig.11 Cross-sectional view observed along line segment XII-XII.

[0027] Fig.13 is from Fig.11 End view observed along line segment XIII-XIII.

[0028] Fig.14 It is shown Figure 11 to Figure 13 A partial top view of one process step of a method for manufacturing a semiconductor device is shown.

[0029] Fig.15 is from Fig.14 Cross-sectional view observed along line segment XV-XV.

[0030] Fig.16 It is shown Figure 11 to Figure 13 The method for manufacturing a semiconductor device shown in Fig.14 A partial top view of a process step after the process shown.

[0031] Fig.17 is from Fig.16 Cross-sectional view observed along line segment XVII-XVII.

[0032] Fig.18 It is shown Figure 11 to Figure 13 The method for manufacturing a semiconductor device shown in Fig.16 A partial top view of a process step after the process shown.

[0033] Fig.19 is from Fig.18 Cross-sectional view observed along line segment XIX-XIX.

[0034] Fig. 20 It is shown Figure 11 to Figure 13 A partial perspective view of a modified example of a method for manufacturing a semiconductor device shown.

[0035] Fig.21 It is shown Figure 11 to Figure 13 A partial perspective view of a modified example of a method for manufacturing a semiconductor device shown.

[0036] Fig. 22 This is a cross-sectional view of a semiconductor device according to the third embodiment.

[0037] Fig.23 This is a cross-sectional view of a semiconductor device according to a fourth embodiment.

[0038] Fig.24 This is a cross-sectional view of a semiconductor device according to the fifth embodiment.

[0039] Fig.25 This is a partial cross-sectional view showing one step of a method for manufacturing a semiconductor device according to the fifth embodiment.

[0040] Fig.26 This is a cross-sectional view of a semiconductor device according to a sixth embodiment.

[0041] Fig. 27 This is a plan view showing the interior of a sealing member of a semiconductor device according to a seventh embodiment.

[0042] Fig.28 It is shown Fig. 27 A partial top view of one process step of a method for manufacturing a semiconductor device is shown.

[0043] Fig.29 It is shown Fig. 27 The method for manufacturing a semiconductor device shown in Fig.28 A partial top view of a process step after the process shown.

[0044] Fig.30 It is shown Fig. 27 The method for manufacturing a semiconductor device shown in Fig.29 A partial top view of a process step after the process shown.

[0045] Fig.31 This is a block diagram showing the configuration of a power conversion system to which the power conversion device according to the eighth embodiment is applied.

[0046] Fig.32 It is a cross-sectional view showing a first lead frame and a second lead frame formed by a conventional method for manufacturing a semiconductor device.

[0047] Fig.33 It is a cross-sectional view showing a first lead frame and a second lead frame formed by a conventional method for manufacturing a semiconductor device.

[0048] (Explanation of symbols)

[0049] 1: semiconductor element; 2, 402: first lead frame; 2a, 402a: first part; 2b, 402b: second part; 2c: third part; 3, 403: second lead frame; 3a: fourth part; 3b: fifth part; 3c: sixth part; 4: intermediate frame; 4a: seventh part; 4b: eighth part; 4c: ninth part; 5: electronic component; 6: first wiring component; 7: second wiring component; 8: heat-conducting component; 8a: conductive component; 8b: insulating component; 9: sealing component; 9A: first side surface; 9B: second side surface; 9C: lower surface; 9D: upper surface; 10, 11: bonding component; 20, 21: conductive component; 22: 1st plate portion; 22a: 1st part; 22b: 2nd part; 22c: 3rd part; 23: 2nd plate portion; 24: 3rd plate portion; 24a: 7th part; 24b: 8th part; 24c: 9th part; 25: frame portion; 25a: 1st frame portion; 25b: 2nd frame portion; 25c: 3rd frame portion; 26: opening portion; 30: collapsed edge surface; 100, 101, 102, 103, 104, 202: semiconductor device; 150: power supply; 200: power conversion device; 201: main conversion circuit; 203: control circuit; 300: load. DETAILED DESCRIPTION

[0050] Hereinafter, the present embodiment will be described with reference to the drawings. In the following description, for convenience, a first direction X, a second direction Z, and a third direction Y that intersect with each other are used.

[0051] Implementation method 1.

[0052] <Structure of Semiconductor Device>

[0053] like Figure 1 to Figure 4 As shown, semiconductor device 100 includes semiconductor element 1 , first lead frame 2 , second lead frame 3 , middle frame 4 , electronic component 5 , first wiring member 6 , second wiring member 7 , heat conducting member 8 , and sealing member 9 .

[0054] like Figure 1 to Figure 4 As shown, the sealing member 9 seals the semiconductor element 1, the first lead frame 2, the second lead frame 3, the intermediate frame 4, the electronic component 5, the first wiring component 6, the second wiring component 7, and the heat conducting component 8. The semiconductor element 1, the electronic component 5, the first wiring component 6, and the second wiring component 7 are entirely buried in the sealing member 9. The first lead frame 2, the second lead frame 3, the intermediate frame 4, and the heat conducting component 8 have surfaces exposed from the sealing member 9.

[0055] The first lead frame 2, the second lead frame 3, the intermediate frame 4, the electronic component 5, the first wiring member 6, and the second wiring member 7 are each an element constituting a part of a wiring circuit formed inside the semiconductor device 100. When the semiconductor device 100 is applied to a power conversion device 200 described later, the semiconductor element 1 is the power conversion device 200 (see Fig.25 ) in the case of a switching element of a main conversion circuit 201, the first lead frame 2 constitutes a part of the main conversion circuit 201, and the second lead frame 3 and the intermediate frame 4 constitute a part of the control circuit 203.

[0056] The sealing component 9 has a first side surface 9A, a second side surface 9B, a lower surface 9C and an upper surface 9D. The first side surface 9A and the second side surface 9B face opposite sides to each other in the first direction X. In the second direction Z intersecting the first direction X, the central parts of the first side surface 9A and the second side surface 9B, for example, protrude further outward than the two ends of the first side surface 9A and the second side surface 9B. The lower surface 9C and the upper surface 9D face opposite sides to each other in the second direction Z. The sealing component 9 is, for example, a composite material having a filling material such as a filler and a resin as main components. The resin contained in the sealing component 9 is, for example, any resin selected from epoxy resin and phenol resin.

[0057] The semiconductor element 1 is, for example, a vertical semiconductor element, and has an upper electrode and a lower electrode. The upper electrode is electrically connected to the electronic component 5 via the first wiring member 6. The lower electrode is electrically connected to the first lead frame 2 via the conductive bonding member 10. The semiconductor element 1 includes at least one selected from a diode used in a converter section that converts input AC power into DC power, a bipolar transistor used in an inverter section that converts DC power into AC power, an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), and a GTO (Gate Turn-Off Thyristor). The semiconductor element 1 is, for example, arranged closer to the lower surface 9C than the center of the semiconductor device 100 in the second direction Z. The material constituting the bonding member 10 includes, for example, solder or silver paste.

[0058] like Figure 2 to Figure 4 As shown, the first lead frame 2 extends along the first direction X. The first lead frame 2 includes a first portion 2a exposed from the sealing member 9, and a second portion 2b and a third portion 2c sealed by the sealing member 9. The first portion 2a, the second portion 2b, and the third portion 2c are provided as the same member.

[0059] like Figure 2 to Figure 4 As shown, the length direction of the first portion 2a is along the first direction X. The first portion 2a is exposed from the first side surface 9A located above the center of the sealing member 9 in the second direction Z. The second portion 2b is arranged closer to the lower surface 9C side than the first portion 2a in the second direction Z, and is arranged closer to the second lead frame 3 side than the first portion 2a in the first direction X. The semiconductor element 1 is mounted on the second portion 2b.

[0060] The second portion 2b has an upper surface electrically connected to the lower electrode of the semiconductor element 1 via the bonding member 10 and a lower surface thermally connected to the upper surface of the heat conducting member 8. The upper surface and the lower surface are along the first direction X and the third direction Y, and intersect with the second direction Z. The upper surface of the second portion 2b is arranged closer to the lower surface 9C side of the sealing member 9 than the lower surface of the first portion 2a in the second direction Z. The width of the second portion 2b in the second direction Z is, for example, narrower than each of the widths of the second portion 2b in the first direction X and the third direction Y.

[0061] The third portion 2c electrically connects the first portion 2a and the second portion 2b, and is inclined relative to each of the first portion 2a and the second portion 2b. The first portion 2a, the third portion 2c, and the second portion 2b are continuous in the first direction X. One end of the first portion 2a in the first direction X is exposed from the first side surface 9A of the sealing member 9. The other end of the first portion 2a in the first direction X is connected to one end of the third portion 2c in the first direction X. The other end of the third portion 2c in the first direction X is connected to one end of the second portion 2b in the first direction X.

[0062] like Figure 3 as well as Figure 4 As shown in FIG. 1 , the internal angle formed by the second portion 2b and the third portion 2c on the XZ plane is, for example, an obtuse angle. Figure 3 as well as Figure 4 As shown, the interior angle formed by the first portion 2a and the third portion 2c on the XZ plane is, for example, an obtuse angle.

[0063] like Figure 2 to Figure 4 As shown, the second lead frame 3 extends along the first direction X. The second lead frame 3 includes a fourth portion 3a exposed from the sealing member 9 and a fifth portion 3b sealed by the sealing member 9. The fourth portion 3a and the fifth portion 3b are provided as the same member.

[0064] like Figure 2 to Figure 4 As shown, the length direction of the fourth portion 3a is along the first direction X. The fifth portion 3b is arranged closer to the first lead frame 2 than the fourth portion 3a in the first direction X. The length direction of the fifth portion 3b is along the first direction X. The fourth portion 3a and the fifth portion 3b are continuous in the first direction X. The height of the fourth portion 3a relative to the lower surface 9C of the sealing member 9 is equal to the height of the first portion 2a relative to the lower surface 9C of the sealing member 9.

[0065] The end surface of the fifth portion 3b located on the first lead frame 2 side in the first direction X is arranged, for example, closer to the second side surface 9B than the connection portion between the seventh portion 4a and the ninth portion 4c of the intermediate frame 4. In addition, the end surface of the fifth portion 3b located on the first lead frame 2 side in the first direction X may be arranged, for example, closer to the first lead frame 2 than the connection portion between the seventh portion 4a and the ninth portion 4c of the intermediate frame 4.

[0066] like Figure 2 to Figure 4 As shown, the intermediate frame 4 is sealed by a sealing member 9. The intermediate frame 4 is provided with an electronic component 5 as an element constituting a part of the wiring circuit formed inside the semiconductor device 100. The electronic component 5 is, for example, an IC (Integral Circuit) chip. The electronic component 5 is fixed to the intermediate frame 4 via a bonding member 11. The material constituting the bonding member 11 includes, for example, solder or silver paste.

[0067] The intermediate frame 4 is disposed between the second portion 2b of the first lead frame 2 and the fifth portion 3b of the second lead frame 3 in the second direction Z. Figure 4 As shown, the entire middle frame 4 is arranged below the second lead frame 3 in the second direction Z. The entire middle frame 4 is arranged above the second portion 2b of the first lead frame 2 in the second direction Z and below the first portion 2a.

[0068] like Figure 2 to Figure 4 As shown, the intermediate frame 4 includes, for example, a seventh portion 4a, an eighth portion 4b, and a ninth portion 4c. The seventh portion 4a, the eighth portion 4b, and the ninth portion 4c are provided as the same component. The seventh portion 4a, the eighth portion 4b, and the ninth portion 4c are continuous in the first direction X.

[0069] The electronic component 5 is mounted on the 7th part 4a. The 7th part 4a has an upper surface that is at least thermally connected to the electronic component 5 via the bonding component 11, and a lower surface that is spaced apart from the lower surface 9C in the second direction Z. The upper surface and the lower surface are arranged along the first direction X and the third direction Y, and intersect with the second direction Z. At least a part of the lower surface of the 7th part 4a is opposite to the heat-conducting component 8 via the sealing component 9. The 8th part 4b is arranged higher than the 7th part 4a in the second direction Z. The 9th part 4c electrically connects the 7th part 4a and the 8th part 4b, and is inclined relative to the 7th part 4a and the 8th part 4b. The end face of the 8th part 4b located on the side opposite to the 9th part 4c in the first direction X is exposed, for example, from the 2nd side surface 9B. The 8th part 4b of the intermediate frame 4 extends outwardly, for example, than the 2nd side surface 9B of the sealing component 9.

[0070] The entirety of the seventh portion 4a, the eighth portion 4b, and the ninth portion 4c is disposed above the second portion 2b of the first lead frame 2 and below the first portion 2a in the second direction Z. The entirety of the seventh portion 4a, the eighth portion 4b, and the ninth portion 4c is disposed below the second lead frame 3 in the second direction Z. Among the seventh portion 4a, the eighth portion 4b, and the ninth portion 4c, at least a portion of the seventh portion 4a is disposed between the second portion 2b and the fifth portion 3b in the first direction X.

[0071] The upper surface of the seventh portion 4a of the intermediate frame 4 is arranged above the upper surface of the second portion 2b of the first lead frame 2. The upper surface of the seventh portion 4a of the intermediate frame 4 is arranged below the lower surfaces of the fourth portion 3a and the fifth portion 3b of the second lead frame 3. The lower surface of the seventh portion 4a of the intermediate frame 4 is arranged above, for example, the upper surface of the second portion 2b of the first lead frame 2.

[0072] The end surface of the intermediate frame 4 located on the first lead frame 2 side in the first direction X is arranged closer to the second lead frame 3 than the end surface of the second portion 2b located on the second lead frame 3 side in the first direction X. The distance between the end surface of the intermediate frame 4 located on the first lead frame 2 side in the first direction X and the end surface of the second portion 2b located on the second lead frame 3 side in the first direction X is L1.

[0073] The distance L1 between the second part 2b and the seventh part 4a of the intermediate frame 4 in the first direction X is shorter than the distance h2 between the upper surface of the second part 2b and the upper surface of the first part 2a in the second direction Z. The above distance L1 is shorter than the creeping distance of the third part 2c in the XZ plane. The above distance L1 is shorter than the distance h1 between the upper surface of the second part 2b and the upper surface of the seventh part 4a in the second direction Z. The above distance L1 is shorter than the distance h3 between the second part 2b and the seventh part 4a in the second direction Z. The above distance L1 is shorter than the distance L2 between the second part 2b and the second lead frame 3 in the first direction X. The above distance L2 is, for example, longer than the above distance h2. The above distance h2 is, for example, greater than 2 mm. Preferably, the above distance h2 is greater than 3 mm.

[0074] The shortest distance between the first lead frame 2 and the intermediate frame 4 is shorter than the shortest distance between the first lead frame 2 and the second lead frame 3. The shortest distance between the first lead frame 2 and the intermediate frame 4 is the shortest distance between the second portion 2b and the seventh portion 4a. The shortest distance between the first lead frame 2 and the second lead frame 3 is the shortest distance between the second portion 2b and the fifth portion 3b.

[0075] The first lead frame 2, the second lead frame 3, and the intermediate frame 4 are formed of a single plate-shaped conductive member. The first lead frame 2 is formed by punching and bending the plate-shaped conductive member. The second lead frame 3 is formed by punching the conductive member. The intermediate frame 4 is formed by punching and bending the conductive member.

[0076] The first lead frame 2, the second lead frame 3, and the intermediate frame 4 have respective end faces along the z direction formed with collapsed edges 30 caused by stamping. The collapsed edges 30 formed on the intermediate frame 4 and the collapsed edges 30 formed on the first lead frame 2 and the second lead frame 3 face the opposite side in the second direction Z. The collapsed edges 30 formed on the intermediate frame 4 face upward, for example. The collapsed edges 30 formed on the first lead frame 2 and the second lead frame 3 face downward, for example. In addition, the collapsed edges 30 formed on the intermediate frame 4 may face downward, and the collapsed edges 30 formed on the first lead frame 2 and the second lead frame 3 may face upward.

[0077] The material constituting the first lead frame 2 , the second lead frame 3 , and the intermediate frame 4 may be any material having conductivity, and includes, for example, copper (Cu) or aluminum (Al).

[0078] The distance between the lower surface 9C of the sealing member 9 and the first portion 2a of the first lead frame 2 in the second direction Z is, for example, equal to the distance between the lower surface 9C of the sealing member 9 and the fourth portion 3a of the second lead frame 3 in the second direction Z.

[0079] The first wiring member 6 electrically connects the upper electrode of the semiconductor element 1 and the electronic component 5. The second wiring member 7 electrically connects the electronic component 5 and the fifth portion 3b of the second lead frame 3. The first wiring member 6 and the second wiring member 7 include, for example, at least one of a wire and a tape. In this case, the first wiring member 6 and the second wiring member 7 are bonded to each component by an ultrasonic ball bonding method, a thermocompression bonding method, or a combination of the two methods.

[0080] In the second direction Z, the distance between the joining portion of the upper electrode of the semiconductor element 1 and the first wiring component 6 and the joining portion of the electronic component 5 and the first wiring component 6 is shorter than the distance between the joining portion of the upper electrode of the semiconductor element 1 and the first wiring component 6 and the joining portion of the second lead frame 3 and the second wiring component 7, for example.

[0081] In the first direction X, the distance between the joining portion between the upper electrode of the semiconductor element 1 and the first wiring component 6 and the joining portion between the electronic component 5 and the first wiring component 6 is shorter than the distance between the joining portion between the upper electrode of the semiconductor element 1 and the first wiring component 6 and the joining portion between the second lead frame 3 and the second wiring component 7, for example.

[0082] The heat conducting member 8 is a portion that is thermally connected to an external cooler in the semiconductor device 100. The heat conducting member 8 electrically insulates the semiconductor element 1 and the first lead frame 2 from the cooler and thermally connects the two. The upper surface of the heat conducting member 8 is thermally connected to the lower surface of the second portion 2b of the first lead frame 2. The lower surface of the heat conducting member 8 is exposed from the lower surface 9C of the sealing member 9.

[0083] The heat-conducting component 8 is, for example, a laminate of a conductive component 8a having electrical conductivity and thermal conductivity and an insulating component 8b having electrical insulation and high thermal conductivity. The conductive component 8a is, for example, a metal foil or a metal plate. The material constituting the conductive component 8a includes, for example, Cu or Al. The insulating component 8b is, for example, a thermosetting resin mixed with a filler having high thermal conductivity. The material constituting the filler includes, for example, at least one of silicon dioxide (SiO2), aluminum oxide (Al2O3), and boron nitride (BN). The width (thickness) of the conductive component 8a in the second direction Z is, for example, equal to the width (thickness) of the insulating component 8b in the second direction Z.

[0084] The thickness of the conductive member 8a of the heat-conducting member 8 may be, for example, thicker than the width (thickness) of the insulating member 8b in the second direction Z. Such a heat-conducting member 8 has a higher heat dissipation performance than a heat-conducting member 8 in which the thickness of the conductive member 8a is about the same as the thickness of the insulating member 8b. Furthermore, when comparing two semiconductor devices 100 having the same distance h2 and only different thicknesses of the heat-conducting member 8, the insulation distance of the semiconductor device 100 having the relatively thick heat-conducting member 8 is longer than the insulation distance of the semiconductor device 100 having the relatively thin heat-conducting member 8.

[0085] The semiconductor device 100 includes, for example, a plurality of semiconductor elements 1, a plurality of first lead frames 2, a plurality of second lead frames 3, a plurality of intermediate frames 4, a plurality of electronic components 5, a plurality of first wiring members 6, and a plurality of second wiring members 7. Figure 2 to Figure 4 The one set of structures shown is arranged in a plurality of sets in the third direction Y.

[0086] <Method for manufacturing semiconductor device>

[0087] The manufacturing method of the semiconductor device 100 comprises: a first step of performing stamping, a first bending and a second bending on a conductive component 20; a second step of installing a semiconductor element 1, an electronic component 5, a first wiring component 6 and a second wiring component 7 on the conductive component 20 after the first step; a third step of forming a sealing component 9 that seals the semiconductor element 1, the electronic component 5, the first wiring component 6 and the second wiring component 7 as a whole and a part of the conductive component 20 after the second step; and a fourth step of cutting off a part of the conductive component 20 exposed from the sealing component 9 after the third step.

[0088] In the first step, first, a flat conductive member 20 is prepared. Next, a press process is performed on the conductive member 20. Figure 5 as well as Figure 6 In the example shown, the punch moves from the lower side to the upper side in the second direction Z to punch the conductive member 20. Figure 5 as well as Figure 6 The conductive member 20 is shown.

[0089] like Figure 5 as well as Figure 6 As shown, the conductive member 20 includes a first plate portion 22, a second plate portion 23, and a third plate portion 24, and a frame portion 25 connecting them. The first plate portion 22 is finally processed into a first lead frame 2. The second plate portion 23 is finally processed into a second lead frame 3. The third plate portion 24 is finally processed into an intermediate frame 4.

[0090] The first plate portion 22, the second plate portion 23, and the third plate portion 24 extend along the first direction X. The frame portion 25 includes: a first frame portion 25a connected to the first plate portion 22; a second frame portion 25b connected to the second plate portion 23 and the third plate portion 24; and a third frame portion 25c connecting the first frame portion 25a and the second frame portion 25b. The length directions of the first frame portion 25a and the second frame portion 25b are along the first direction X. For example, an opening portion 26 is formed in the second frame portion 25b. The opening portion 26 is arranged in the first direction X with a gap between the second plate portion 23 and the third plate portion 24.

[0091] One end of the first plate portion 22 in the first direction X is connected to the first frame portion 25 a . The other end of the first plate portion 22 in the first direction X is disposed in the first direction X at a distance from one end of the second plate portion 23 in the first direction X.

[0092] The second plate portion 23 is arranged so as to extend toward the first plate portion 22 side relative to the second frame portion 25b in the first direction X. The other end of the second plate portion 23 in the first direction X is connected to a portion of the second frame portion 25b located on the first plate portion 22 side relative to the opening 26. The interval in the first direction X between the first plate portion 22 and the second plate portion 23 is set to be smaller than the above-mentioned distance L2.

[0093] The third plate portion 24 is arranged so as to extend toward the side opposite to the first plate portion 22 relative to the second frame portion 25b in the first direction X. One end of the third plate portion 24 in the first direction X is connected to a portion of the second frame portion 25b located on the side opposite to the first plate portion 22 relative to the opening 26. The second plate portion 23 and the third plate portion 24 are arranged so as not to face each other with the second frame portion 25b interposed therebetween in the first direction X.

[0094] like Figure 6 As shown, by the above-mentioned press working, a collapsed surface 30 is formed at the lower end of the end surface (cut surface) of the conductive member 20. The collapsed surface 30 is arranged between the lower surface of the conductive member 20 and the shear surface in the cut surface of the conductive member 20.

[0095] Next, for Figure 5 as well as Figure 6 The conductive member 20 shown in the figure is subjected to the first bending process. Figure 7 as well as Figure 8 The conductive member 20 is shown.

[0096] like Figure 7 as well as Figure 8 As shown, the first plate portion 22 and the third plate portion 24 of the conductive member 20 are bent in opposite directions. Thus, the first portion 22a, the second portion 22b, and the third portion 22c are formed in the first plate portion 22. The seventh portion 24a, the eighth portion 24b, and the ninth portion 24c are formed in the third plate portion 24.

[0097] One end of the first part 22a in the first direction X is connected to the first frame portion 25a. The other end of the first part 22a in the first direction X is connected to one end of the third part 22c in the first direction X. The other end of the third part 22c in the first direction X is connected to one end of the second part 22b in the first direction X. The second part 22b is arranged below the lower surface of the first part 22a in the second direction Z. The distance between the upper surface of the first part 22a and the upper surface of the second part 22b in the second direction Z and the distance between the upper surface of the first part 22a and the upper surface of the second plate portion 23 in the second direction Z become the above-mentioned distance h2. The third part 22c connects the first part 22a and the second part 22b and is inclined relative to each of the first part 22a and the second part 22b.

[0098] One end of the 8th portion 24b in the first direction X is connected to the second frame portion 25b. The other end of the 8th portion 24b in the first direction X is connected to one end of the 9th portion 24c in the first direction X. The other end of the 9th portion 24c in the first direction X is connected to one end of the 7th portion 24a in the first direction X. The 7th portion 24a is arranged above the upper surface of the 8th portion 24b in the second direction Z. The 9th portion 24c connects the 7th portion 24a and the 8th portion 24b and is inclined relative to each of the 7th portion 24a and the 8th portion 24b.

[0099] Next, for Figure 7 as well as Figure 8 The conductive member 20 shown in the figure is subjected to a second bending process. Fig. 9 as well as Fig.10 The conductive member 20 is shown.

[0100] like Fig. 9 as well as Fig.10As shown in FIG. 1 , the third plate portion 24 of the conductive component 20 is bent around the bending line C. The bending line C is an imaginary straight line that passes through the center of the second frame portion 25b and the opening portion 26 in the first direction X and extends along the third direction Y. As a result, the third plate portion 24 is arranged below the first plate portion 22 and the second plate portion 23 in the second direction Z. Fig.10 As shown, the collapsed surface 30 of the third plate portion 24 faces the opposite side to the collapsed surface 30 of the first plate portion 22 and the second plate portion 23 in the second direction Z. The collapsed surface 30 of the third plate portion 24 faces upward, and the collapsed surface 30 of the first plate portion 22 and the second plate portion 23 faces downward.

[0101] The distance between the second portion 22b and the seventh portion 24a in the first direction X is the above-mentioned distance L1. The distance between the upper surface of the second portion 22b and the upper surface of the seventh portion 24a in the second direction Z is the above-mentioned distance h1. The distance between the upper surface of the first portion 22a and the upper surface of the second portion 22b in the second direction Z is the above-mentioned distance h2. The distance between the upper surface of the second portion 22b and the lower surface of the seventh portion 24a in the second direction Z is the above-mentioned distance h3. The distance between the second portion 22b and the second plate portion 23 in the first direction X is the above-mentioned distance L2. The above-mentioned distance h2 is, for example, 3 mm. The distance between the upper surface of the seventh portion 24a and the eighth portion 24b in the second direction Z is, for example, 1.5 mm.

[0102] In the second step, first, the Fig. 9 as well as Fig.10 The conductive component 20 shown is bonded to the semiconductor element 1 and the electronic component 5 via the bonding components 10 and 11. The semiconductor element 1 is bonded to the upper surface of the second portion 22b of the first plate portion 22 via the bonding component 10. The electronic component 5 is bonded to the upper surface of the seventh portion 24a of the third plate portion 24 via the bonding component 11. Next, the first wiring component 6 and the second wiring component 7 are formed. The first wiring component 6 electrically connects the upper electrode of the semiconductor element 1 and the electronic component 5. The second wiring component 7 electrically connects the electronic component 5 and the second plate portion 23. In this way, in the second step, a structure including the semiconductor element 1, the electronic component 5, the first wiring component 6, the second wiring component 7 and the second plate portion 23 is formed. Fig. 9 as well as Fig.10 The conductive component 20 is shown as an integral part.

[0103] In the third step, the sealing component 9 is molded by transfer molding, compression molding or injection molding. First, the integrated object including the semiconductor element 1, the electronic component 5, the first wiring component 6, the second wiring component 7 and the conductive component 20 formed by the above-mentioned second step and the heat-conducting component 8 are put into the mold. At this time, a part of the first portion 22a of the conductive component 20 located on the side of the first frame portion 25a, the first frame portion 25a, a part of the second plate portion 23 located on the side of the second frame portion 25b, a part of the third plate portion 24 located on the side of the second frame portion 25b, the second frame portion 25b and the third frame portion 25c are arranged outside the mold. Next, a sealing material having fluidity is injected into the mold and hardened. Thus, the sealing component 9 is hardened according to the heat-conducting component 8. Figure 1 to Figure 4 A portion of the first portion 22a of the conductive member 20 located on the first frame portion 25a side, the first frame portion 25a, a portion of the second plate portion 23 located on the second frame portion 25b side, a portion of the third plate portion 24 located on the second frame portion 25b side, the second frame portion 25b, and the third frame portion 25c are exposed to the outside from the first side surface 9A and the second side surface 9B of the sealing member 9. The lower surface of the heat conductive member 8 is exposed to the outside from the lower surface 9C of the sealing member 9.

[0104] In the fourth step, at least the first frame portion 25a, the second frame portion 25b, and the third frame portion 25c are removed. Thus, the first lead frame 2 is formed from the first plate portion 22, the second lead frame 3 is formed from the second plate portion 23, and the intermediate frame 4 is formed from the third plate portion 24. In addition, a portion of each of the first plate portion 22, the second plate portion 23, and the third plate portion 24 that is exposed to the outside from the second side surface 9B may be removed. As described above, the semiconductor device 100 is manufactured.

[0105] <Effects>

[0106] According to the semiconductor device 100 and Fig.32 as well as Fig.33 The comparison of the comparative examples shown here illustrates the effects of the semiconductor device 100 .

[0107] like Fig.32 as well as Fig.33 As shown, in the semiconductor device according to the comparative example, in order to ensure the insulation distance, the first lead frame 402 is bent. The first lead frame 402 includes: a first portion 402a disposed outside the sealing member; and a second portion 402b on which the semiconductor element is mounted. The first lead frame 402 and the second lead frame 403 are preferably formed of one conductive member from the viewpoint of manufacturing cost.

[0108] like Fig.32As shown in FIG. 1 , when the first lead frame 402 and the second lead frame 403 are formed from one conductive member by stamping, and only the first lead frame 402 is bent, the shortest distance L3 between the first lead frame 402 and the second lead frame 403 located closest to the first lead frame 402 in the first direction X becomes greater than the distance h5 between the first portion 402a and the second portion 402b of the first lead frame 402 in the second direction Z. This is because the so-called pattern shrinkage occurs due to the bending process. In particular, if Fig.33 As shown in FIG. 1 , when the first lead frame 402 and the second lead frame 403 are formed from one conductive member by stamping and bending, the shortest distance L4 between the first lead frame 402 and the second lead frame 403 located closest to the first lead frame 402 in the first direction X is longer than the distances L3 and h5. The distance h5 is set according to the required insulation distance. Therefore, in the semiconductor device as a comparative example, it is difficult to make the distances L3 and L4 shorter than the distance h5 from the viewpoint of the insulation distance.

[0109] In contrast, the semiconductor device 100 includes an intermediate frame 4 which is disposed between the second portion of the first lead frame 2 and the fifth portion 3b of the second lead frame 3 in the second direction Z and on which are mounted elements constituting a portion of a wiring circuit including the first lead frame 2 and the second lead frame 3. A distance L1 between the second portion 2b and the seventh portion 4a of the intermediate frame 4 in the first direction X is shorter than a distance h2 between the upper surface of the first portion 2a and the upper surface of the second portion 2b in the second direction Z.

[0110] That is, when the distance h2 is equal to the distance h5 of the comparative example, the distance L1 can be set shorter than the distance L3 of the comparative example. Furthermore, the electronic component 5 mounted on the second lead frame in the comparative example is mounted on the intermediate frame 4 in the semiconductor device 100. As a result, the second lead frame 3 can be miniaturized in the amount of the region for mounting the electronic component 5 compared to the second lead frame of the comparative example. As a result, the semiconductor device 100 can be miniaturized compared to the comparative example while ensuring an insulation distance at least equal to that of the comparative example.

[0111] Furthermore, if Figure 3 as well as Figure 4As shown in FIG. 1 , in the semiconductor device 100, the first lead frame 2, the second lead frame 3, and the intermediate frame 4 each have a collapsed edge surface 30 formed by a stamping process. The collapsed edge surface formed in the intermediate frame faces the opposite side to the collapsed edge surface 30 formed in each of the first lead frame and the second lead frame in the second direction. Such a first lead frame 2, the second lead frame 3, and the intermediate frame 4 can be formed from a single conductive member 20. The first lead frame 2 can be formed from the first plate portion 22 after the shearing process and the first bending process are performed. On the other hand, the intermediate frame 4 can be formed from the third plate portion 24 after the shearing process, the first bending process, and the second bending process are performed. The third plate portion 24 is formed in the conductive member 20 so as to extend toward the side opposite to the first plate portion 22 relative to the bending line C, and is then bent around the bending line C. Therefore, the distance L1 is not affected by the so-called pattern shrinkage that occurs between the first plate portion 22 and the second plate portion 23 during the first bending process. Therefore, in the semiconductor device 100 , it is possible to suppress the manufacturing cost, ensure the insulation distance, and achieve miniaturization compared with the above-mentioned comparative example.

[0112] In the semiconductor device 100 , the distance h2 between the upper surface of the first portion 2 a and the upper surface of the second portion 2 b in the second direction Z can be set to 2 mm or more.

[0113] like Figure 3 as well as Figure 4 As shown in FIG. 1 , in the semiconductor device 100, the first portion 2a is exposed from the first side surface 9A located above the center of the sealing member 9 in the second direction Z. Thus, the insulation distance between the first portion 2a exposed from the sealing member 9 and the heat conducting member 8 is relatively long. In the semiconductor device 100, the upper limit value of the distance h2 is not limited by the distance L1, so that the miniaturization in the first direction X can be achieved and the insulation distance can be relatively long.

[0114] In addition, the second lead frame 3 of the semiconductor device 100 may also have a bent shape similar to the first lead frame 2. The fifth portion 3b of the second lead frame 3 may also be arranged on the lower surface 9C side relative to the fourth portion 3a in the second direction Z. The upper surface of the fifth portion 3b is arranged on the same plane as the upper surface of the seventh portion 4a of the intermediate frame 4 or arranged above the upper surface. The second lead frame 3 may also further include a sixth portion that electrically connects the fourth portion 3a and the fifth portion 3b. The sixth portion electrically connects the first portion 2a and the second portion 2b, and is inclined relative to each of the first portion 2a and the second portion 2b.

[0115] Implementation method 2.

[0116] <Structure of Semiconductor Device>

[0117] like Figure 11 to Figure 13As shown, the semiconductor device 101 according to the second embodiment has basically the same structure as the semiconductor device 100 according to the first embodiment, but is different from the semiconductor device 100 in that the collapsed edge surfaces 30 of the second lead frame 3 and the intermediate frame 4 face the opposite side to the collapsed edge surface 30 of the first lead frame 2.

[0118] The height of the first portion 2a relative to the lower surface 9C of the sealing member 9 is higher than the height of the fourth portion 3a relative to the lower surface 9C of the sealing member 9. The distance h1 is longer than a distance h4 between the upper surface of the first portion 2a of the first lead frame 2 and the upper surface of the fourth portion 3a of the second lead frame 3 in the second direction Z. The lower surface of the first portion 2a of the first lead frame 2 is arranged on the same plane as the upper surfaces of the fourth portion 3a and the fifth portion 3b of the second lead frame 3 or arranged above the upper surfaces.

[0119] The upper surface of the seventh portion 4 a of the intermediate frame 4 is arranged above the lower surfaces of the fourth portion 3 a and the fifth portion 3 b of the second lead frame 3 .

[0120] The collapsed edge surfaces 30 of the second lead frame 3 and the intermediate frame 4 are oriented, for example, upward. The collapsed edge surfaces 30 of the first lead frame 2 are oriented, for example, downward. Alternatively, the collapsed edge surfaces 30 of the second lead frame 3 and the intermediate frame 4 may be oriented downward, and the collapsed edge surfaces 30 of the first lead frame 2 may be oriented upward.

[0121] <Method for manufacturing semiconductor device>

[0122] The method for manufacturing the semiconductor device 101 involved in embodiment 2 has basically the same structure as the method for manufacturing the semiconductor device 100 involved in embodiment 1, but is different from the manufacturing method of the semiconductor device 100 in that the second bending process is performed on the second plate portion 23 and the third plate portion 24 in the above-mentioned first step.

[0123] In the first step, first, a stamping process is performed to form Fig.14 as well as Fig.15 The conductive component 21 is shown. Fig.14 as well as Fig.15 The conductive component 21 shown has Figure 5 as well as Figure 6 The conductive member 20 shown in the figure has basically the same structure, but is different from the conductive member 20 in that the second plate portion 23 is arranged so as to extend toward the side opposite to the first plate portion 22 relative to the second frame portion 25b in the first direction X. The other end of the second plate portion 23 in the first direction X is connected to a part of the second frame portion 25b located on the side opposite to the first plate portion 22 relative to the opening portion 26. That is, the second plate portion 23 and the third plate portion 24 are arranged side by side in the second direction Y.

[0124] Next, for Fig.14 as well as Fig.15 The conductive member 21 shown in the figure is subjected to a first bending process. Fig.16 as well as Fig.17 The conductive member 21 shown in FIG. The first bending process is performed on the conductive member 20 in the same manner as the first bending process on the conductive member 20 .

[0125] Next, for Fig.16 as well as Fig.17 The conductive member 21 shown in the figure is subjected to a second bending process. Fig.18 as well as Fig.19 The conductive member 21 is shown in FIG. The second bending process for the conductive member 21 is performed basically in the same manner as the second bending process for the conductive member 20 , but is different therefrom in that both the second plate portion 23 and the third plate portion 24 are bent.

[0126] like Fig.18 as well as Fig.19 As shown, the second plate portion 23 and the third plate portion 24 of the conductive member 21 are bent about the bending line C. Thus, the second plate portion 23 and the third plate portion 24 are arranged below the first plate portion 22 in the second direction Z.

[0127] like Fig.19 As shown, the collapsed edges 30 of the second plate portion 23 and the third plate portion 24 face the opposite side to the collapsed edges 30 of the first plate portion 22 in the second direction Z. The collapsed edges 30 of the second plate portion 23 and the third plate portion 24 face upward, and the collapsed edges 30 of the first plate portion 22 face downward.

[0128] The distance between the second portion 22b and the seventh portion 24a in the first direction X is the above-mentioned distance L1. The distance between the upper surface of the second portion 22b and the upper surface of the seventh portion 24a in the second direction Z is the above-mentioned distance h1. The distance between the upper surface of the first portion 22a and the upper surface of the second portion 22b in the second direction Z is the above-mentioned distance h2. The distance between the upper surface of the second portion 22b and the lower surface of the seventh portion 24a in the second direction Z is the above-mentioned distance h3. The distance between the second portion 22b and the second plate portion 23 in the first direction X is the above-mentioned distance L2. The distance between the upper surface of the second portion 22b and the upper surface of the second plate portion 23 in the second direction Z is the above-mentioned distance h4.

[0129] The second step, the third step, and the fourth step are performed in the same manner as the steps in the method for manufacturing the semiconductor device 100. As described above, the semiconductor device 101 is manufactured.

[0130] The semiconductor device 101 has basically the same structure as the semiconductor device 100 , and thus can achieve the same effects as the semiconductor device 100 .

[0131] Furthermore, the second lead frame 3 of the semiconductor device 101 may include the sixth portion formed by the first bending process.

[0132] Implementation method 3.

[0133] The method for manufacturing a semiconductor device according to the third embodiment has a structure basically similar to that of the method for manufacturing the semiconductor device 100 according to the first embodiment, but in the second bending process, instead of the bending process centered on the bending line C, the following is performed: Fig. 20 as well as Fig.21 The twisting process shown is different from the method for manufacturing the semiconductor device 100 .

[0134] At least the third plate portion 24 is subjected to twisting processing. Fig. 20 as well as Fig.21 In the twisting process shown, the third plate portion 24 is twisted and reversed around the twist center line C. The second plate portion 23 is not twisted. The width of the frame portion 25 connecting the second plate portion 23 and the third plate portion 24 in the first direction X is sufficiently narrower than the width of the second plate portion 23 and the third plate portion 24 in the first direction X.

[0135] In the semiconductor device manufactured in this way, the height of the eighth portion 4 b of the intermediate frame 4 relative to the lower surface 9C of the sealing member 9 is equal to the height of the first portion 2 a of the first lead frame 2 and the fourth portion 3 a of the second lead frame 3 relative to the lower surface 9C of the sealing member 9 .

[0136] The semiconductor device manufactured by the method for manufacturing a semiconductor device according to the third embodiment has basically the same structure as the semiconductor device 100 , and thus can achieve the same effects as those of the semiconductor device 100 .

[0137] In addition, the second plate portion 23 and the third plate portion 24 after the first bending process may be twisted. Such twisting is preferred when manufacturing the semiconductor device 100 having the second lead frame 3 including the sixth portion. In the semiconductor device manufactured in this way, similarly to the semiconductor device 101, the collapsed edges of the second lead frame 3 and the intermediate frame 4 face the opposite side to the collapsed edges of the first lead frame 2.

[0138] Implementation method 4.

[0139] like Fig. 22As shown, the semiconductor device 102 according to the fourth embodiment has basically the same structure as the semiconductor device 100 according to the first embodiment, but is different from the semiconductor device 100 in that the first portion 2 a of the first lead frame 2 is exposed from the upper surface 9D of the sealing member 9 .

[0140] The upper surface of the fourth portion 3a of the second lead frame 3 is also exposed from the upper surface 9D of the sealing member 9. The second lead frame 3 includes the fourth portion 3a, the fifth portion 3b, and the sixth portion 3c. The fifth portion 3b and the sixth portion 3c are embedded in the sealing member 9. The second wiring member 7 is bonded to the upper surface of the fifth portion 3b or the upper surface of the sixth portion 3c.

[0141] The height of the upper surface of the fifth part 3b relative to the lower surface 9C of the sealing member 9 is higher than the height of the upper surface of the seventh part 4a of the intermediate frame 4 relative to the lower surface 9C. Preferably, from the viewpoint of improving the workability (bonding property) of forming the second wiring member 7, the height of the upper surface of the fifth part 3b relative to the lower surface 9C of the sealing member 9 is higher than the height of the upper surface of the seventh part 4a of the intermediate frame 4 relative to the lower surface 9C. That is, the upper surface of the fifth part 3b is arranged higher than the upper surface of the seventh part 4a. The upper surface of the fifth part 3b is arranged higher than the upper surface of the electronic component 5 mounted on the upper surface of the seventh part 4a, for example.

[0142] The fourth portion 3a of the second lead frame 3 is arranged in parallel with the eighth portion 4b of the intermediate frame 4 in the third direction Y. The fifth portion 3b of the second lead frame 3 is arranged in parallel with the seventh portion 4a of the intermediate frame 4 in the third direction Y. The sixth portion 3c of the second lead frame 3 is arranged in parallel with the ninth portion 4c of the intermediate frame 4 in the third direction Y.

[0143] The semiconductor device 102 according to the fourth embodiment has basically the same structure as the semiconductor device 100 , and thus can achieve the same effects as the semiconductor device 100 .

[0144] The distance h2 of the semiconductor device 102 is longer than the distance h2 of the semiconductor device 100. On the other hand, the distance L1 of the semiconductor device 102 is equal to the distance L1 of the semiconductor device 100. Therefore, when comparing the semiconductor device 102 and the semiconductor device 100 of the same size, the insulation distance of the semiconductor device 102 is longer than the insulation distance of the semiconductor device 100.

[0145] The method of manufacturing the semiconductor device 102 has basically the same structure as the method of manufacturing the semiconductor device 100 , but the structure of the mold used in the third step is different from that of the mold used in the method of manufacturing the semiconductor device 100 .

[0146] Preferably, in the third step, a method is used to prevent burrs (e.g., resin burrs) formed of a sealing material from being formed on the upper surface 9D of the sealing member 9. For example, after a film is arranged on the portion of the interior of the mold where the upper surface 9D of the sealing member 9 is molded, the surfaces to be exposed in each of the first plate portion 22 and the second plate portion 23 are arranged in contact with the film. In addition, after adhesive tapes are adhered to the surfaces to be exposed in each of the first plate portion 22 and the second plate portion 23, they are placed inside the mold. After the molding of the sealing member 9 is completed, the film and the adhesive tape are separated from the sealing member 9. The material constituting the film and the adhesive tape includes, for example, polyimide.

[0147] like Fig.23 As shown, in the semiconductor device 102 , the upper surface of the eighth portion 4 b of the intermediate frame 4 may be exposed from the upper surface 9D of the sealing member 9 .

[0148] For example, in the first step, at least the second plate portion 23 and the third plate portion 24 are subjected to the first bending process and the second bending process to manufacture the Fig.23 The semiconductor device 102 is shown. The second bending process may be a bending process or a twisting process.

[0149] Fig.24 Is manufacturing Fig.23 A partial cross-sectional view of the conductive member 20 being bent in the second bending process of the method of the semiconductor device 102 shown. By performing the second bending process on each of the first plate portion 22, the second plate portion 23, and the third plate portion 24, the surfaces to be exposed of each of the first plate portion 22, the second plate portion 23, and the third plate portion 24 are arranged on the same plane.

[0150] Furthermore, the semiconductor device 102 can also be manufactured by twisting the second plate portion 23 and the third plate portion 24 in the second bending process.

[0151] Implementation method 5.

[0152] like Fig.25 As shown, the semiconductor device 103 according to the fifth embodiment has basically the same structure as the semiconductor device 100 according to the first embodiment, but is different from the semiconductor device 100 in that the middle frame 4 and the second lead frame 3 are continuous.

[0153] The intermediate frame 4 is continuous with the fifth portion 3b of the second lead frame 3. That is, all the frames arranged on the second side surface 9B side are formed by the first bending process and the second bending process. Fig.25 The intermediate frame 4 shown consists only of Figure 4 The seventh portion 4a of the intermediate frame 4 shown is constituted.

[0154] The thickness of the conductive component 8a of the heat-conducting component 8 is, for example, thicker than the thickness of the insulating component 8b. The thickness of the conductive component 8a of the heat-conducting component 8 is, for example, 2 mm or more. The material constituting the conductive component 8a includes, for example, Al. As described above, such a heat-conducting component 8 has a higher heat dissipation performance than a heat-conducting component 8 in which the thickness of the conductive component 8a is about the same as the thickness of the insulating component 8b. Furthermore, in the case of comparing two semiconductor devices 103 having the same distance h2 and only different in the thickness of the heat-conducting component 8, the insulation distance of the semiconductor device 103 having the relatively thick heat-conducting component 8 is longer than the insulation distance of the semiconductor device 103 having the relatively thin heat-conducting component 8.

[0155] The semiconductor device 103 according to the fifth embodiment has basically the same structure as the semiconductor device 100 , and thus can achieve the same effects as the semiconductor device 100 .

[0156] The method of manufacturing the semiconductor device 103 has basically the same structure as the method of manufacturing the semiconductor device 100 , but is different from the method of manufacturing the semiconductor device 100 in that the second plate portion 23 and the third plate portion 24 are formed integrally in the first step.

[0157] exist Fig.25 In the manufacturing method of the semiconductor device 103 shown, the second bending process is performed as a twisting process. In addition, by performing the second bending process as a bending process, it is also possible to manufacture a semiconductor device 103 in which the middle frame 4 and the second lead frame 3 are continuous.

[0158] Implementation method 6.

[0159] like Fig.26 As shown, the semiconductor device 104 according to the sixth embodiment has basically the same structure as the semiconductor device 100 according to the first embodiment, but is different from the semiconductor device 100 in that the upper surface 9D of the sealing member 9 is provided with irregularities.

[0160] The distance between the upper surface of the sealing member 9 and each member sealed by the sealing member 9 in the second direction Z is set to be greater than the shortest distance for achieving the required insulation resistance. For example, the upper surface 9D in the region between the third portion 2c of the first lead frame 2 and the second lead frame 3 and the intermediate frame 4 in the first direction X is more recessed than the upper surfaces 9D on the first portion 2a of the first lead frame 2, the third portion 2c, the second lead frame 3, and the intermediate frame 4.

[0161] The semiconductor device 104 according to the sixth embodiment has basically the same structure as the semiconductor device 100 , and thus can achieve the same effects as the semiconductor device 100 .

[0162] Furthermore, in semiconductor device 104, the volume and weight of sealing member 9 are reduced compared to when upper surface 9D is a flat surface. As a result, in semiconductor device 104, the weight and volume of semiconductor device 104 are reduced compared to when upper surface 9D is a flat surface.

[0163] Implementation method 7.

[0164] like Fig. 27 As shown, the semiconductor device 105 according to the seventh embodiment has basically the same structure as the semiconductor device 100 according to the first embodiment, but is different from the semiconductor device 100 in that the seventh portion 4 a of the intermediate frame 4 extends along the third direction Y.

[0165] The seventh portion 4a of the intermediate frame 4 extends along the third direction Y intersecting the first direction X continuous with the seventh portion 4a, the eighth portion 4b, and the ninth portion 4c. The shape of the intermediate frame 4 is, for example, an L-shape when viewed from the second direction Z. The distance in the first direction X between the first lead frame 2 and the portion of the seventh portion 4a extending along the third direction Y is L1.

[0166] The semiconductor device 105 according to the seventh embodiment has basically the same structure as the semiconductor device 100 , and thus can achieve the same effects as the semiconductor device 100 .

[0167] The method for manufacturing the semiconductor device 105 has basically the same structure as the method for manufacturing the semiconductor device 100 , but differs from the method for manufacturing the semiconductor device 100 in that the third plate portion 24 formed by the stamping process in the first step has a portion extending along the third direction Y.

[0168] like Fig.28 As shown, the third plate portion 24 including the portion 27 extending in the first direction X and the portion 28 extending along the third direction Y is formed by the press working in the first step.

[0169] The portion 27 of the third plate portion 24 extending in the first direction X is arranged so as to extend toward the side opposite to the first plate portion 22 relative to the second frame portion 25b in the first direction X. One end of the portion 27 extending in the first direction X is connected to a portion of the second frame portion 25b located on the side opposite to the first plate portion 22 relative to the opening portion 26. The other end of the portion 27 extending in the first direction X is connected to one end of the portion 28 extending along the third direction Y in the third direction Y. The portion 28 extending along the third direction Y is arranged between the first plate portion 22 and the second plate portion 23 in the first direction X.

[0170] Next, for Fig.28The conductive member 20 shown in the figure is subjected to a first bending process. Fig.29 The conductive member 20 is shown.

[0171] like Fig.29 As shown in FIG. 1 , a seventh portion 24 a , an eighth portion 24 b , and a ninth portion 24 c are formed on the third plate portion 24 .

[0172] The seventh portion 24a is composed of a part of the portion 27 extending in the first direction X and the entire portion 28 extending along the third direction Y. The seventh portion 24a is arranged in the second direction Z above the upper surface of the eighth portion 24b.

[0173] Next, for Fig.29 The conductive member 20 shown in the figure is subjected to a second bending process. Fig.30 The conductive member 20 is shown.

[0174] like Fig.30 As shown in FIG. 1 , the third plate portion 24 of the conductive member 20 is bent around the bending line C. Thus, the third plate portion 24 is arranged below the first plate portion 22 and the second plate portion 23 in the second direction Z. The portion of the seventh portion 24a of the third plate portion 24 extending along the third direction is arranged between the first plate portion 22 and the second plate portion 23 in the first direction X.

[0175] Implementation method 8.

[0176] This embodiment is an example in which the semiconductor devices 100 to 105 according to Embodiments 1 to 7 are applied to a power converter. The present disclosure is not limited to a specific power converter, but the following describes a case in which the present disclosure is applied to a three-phase inverter as Embodiment 8.

[0177] Fig.31 A block diagram showing a configuration of a power conversion system to which the power conversion device according to the present embodiment is applied.

[0178] Fig.31 The power conversion system shown is composed of a power supply 150, a power conversion device 200, and a load 300. The power supply 150 is a DC power supply, and supplies DC power to the power conversion device 200. The power supply 150 can be composed of various power supplies, for example, it can be composed of a DC system, a solar cell, a storage battery, or a rectifier circuit connected to an AC system, or an AC / DC converter. In addition, the power supply 150 can also be composed of a DC / DC converter that converts the DC power output from the DC system into a predetermined power.

[0179] The power conversion device 200 is a three-phase inverter connected between the power source 150 and the load 300, converts the DC power supplied from the power source 150 into AC power, and supplies the AC power to the load 300. Fig.31 As shown, it includes: a main conversion circuit 201 that converts DC power into AC power and outputs it; and a control circuit 203 that outputs a control signal for controlling the main conversion circuit 201 to the main conversion circuit 201.

[0180] Load 300 is a three-phase motor driven by AC power supplied from power converter 200. Load 300 is not limited to a specific use, and is a motor mounted on various electrical devices, for example, a motor for hybrid vehicles, electric vehicles, railway vehicles, elevators, or air conditioners.

[0181] The power conversion device 200 is described in detail below. The main conversion circuit 201 includes a switching element and a freewheeling diode (not shown), and converts the DC power supplied from the power supply 150 into AC power by switching the switching element, and supplies it to the load 300. There are various examples of the specific circuit structure of the main conversion circuit 201, but the main conversion circuit 201 of this embodiment is a 2-level three-phase full-bridge circuit, which can be composed of 6 switching elements and 6 freewheeling diodes connected in anti-parallel with each switching element. At least one of the switching elements and freewheeling diodes of the main conversion circuit 201 is a switching element or a freewheeling diode of the semiconductor device 202 corresponding to any of the semiconductor devices in any of the above-mentioned embodiments 1 to 7. With respect to the 6 switching elements, upper and lower branches are formed for every 2 switching elements connected in series, and each upper and lower branch forms each phase (U phase, V phase, W phase) of the full-bridge circuit. Moreover, the output terminals of each upper and lower branch, that is, the three output terminals of the main conversion circuit 201, are connected to the load 300.

[0182] In addition, the main conversion circuit 201 is provided with a driving circuit (not shown) for driving each switching element, but the driving circuit may be built into the semiconductor device 202, or may be a structure that has the driving circuit independently of the semiconductor device 202. The driving circuit generates a driving signal for driving the switching element of the main conversion circuit 201, and supplies it to the control electrode of the switching element of the main conversion circuit 201. Specifically, according to the control signal from the control circuit 203 described later, a driving signal for turning the switching element into a conducting state and a driving signal for turning the switching element into an off state are output to the control electrode of each switching element. When the switching element is maintained in the conducting state, the driving signal is a voltage signal (conduction signal) above the threshold voltage of the switching element, and when the switching element is maintained in the off state, the driving signal is a voltage signal (off signal) below the threshold voltage of the switching element.

[0183] The control circuit 203 controls the switch elements of the main conversion circuit 201 in such a manner that the desired power is supplied to the load 300. Specifically, the time (on-time) when each switch element of the main conversion circuit 201 should be in the on state is calculated according to the power to be supplied to the load 300. For example, the main conversion circuit 201 can be controlled by PWM control that modulates the on-time of the switch element according to the voltage to be output. Moreover, at each time point, a control instruction (control signal) is output to the drive circuit of the main conversion circuit 201 in such a manner that an on signal is output to the switch element that should be in the on state and an off signal is output to the switch element that should be in the off state. The drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switch element in accordance with the control signal.

[0184] In the power conversion device involved in this embodiment, at least any one of the semiconductor devices 100 to 105 involved in embodiments 1 to 7 is applied as the semiconductor device 202 constituting the main conversion circuit 201, so that the insulation distance can be ensured and the power conversion device can be more compact than the power conversion device having a conventional semiconductor device.

[0185] In this embodiment, an example of applying the present disclosure to a 2-level three-phase inverter is described, but the present disclosure is not limited thereto and can be applied to various power conversion devices. In this embodiment, a 2-level power conversion device is used, but a 3-level or multi-level power conversion device can also be used. When power is supplied to a single-phase load, the present disclosure can also be applied to a single-phase inverter. In addition, when power is supplied to a DC load, the present disclosure can also be applied to a DC / DC converter or an AC / DC converter.

[0186] In addition, the power conversion device disclosed in the present invention is not limited to the case where the above-mentioned load is an electric motor. For example, it can be used as a power supply device for an electric discharge machine, a laser processing machine, an induction heating cooker, or a contactless power supply system, and can also be used as a power conditioner for a solar power generation system, a power storage system, etc.

[0187] As described above, the embodiments of the present disclosure are described, but the above embodiments can be deformed in various ways. In addition, the basic scope of the present disclosure is not limited to the above embodiments. The basic scope of the present disclosure is shown by the claims, and it is intended to include all changes within the meaning and scope equivalent to the claims.

Claims

1. A semiconductor device, A semiconductor element, a first lead frame, a second lead frame, a heat conducting member, and a sealing member for sealing the semiconductor element, the first lead frame, the second lead frame, and the heat conducting member. The sealing member includes a first side surface and a second side surface facing opposite sides in a first direction, and a lower surface extending along the first direction. The first lead frame comprises: A first portion, exposed from the first side surface; a second portion arranged closer to the lower surface than the first portion in a second direction intersecting the lower surface; and a third portion electrically connecting the first portion and the second portion and being inclined relative to the first portion and the second portion, The second lead frame comprises: a fourth portion, exposed from the second side surface; as well as The fifth portion is arranged to be spaced apart from the second portion in the first direction and the second direction, The second part, the third part, and the fifth part are sealed by the sealing member. The semiconductor element is mounted on the upper surface of the second portion. The heat conducting member includes a portion which is disposed on the side opposite to the semiconductor element relative to the second portion and is thermally connected to the second portion and is exposed from the lower surface. The semiconductor device further includes an intermediate frame which is arranged between the second portion and the fifth portion at least in the second direction and carries an element constituting a part of a wiring circuit including the first lead frame and the second lead frame. The distance between the second portion and the intermediate frame in the first direction is shorter than the distance between the upper surface of the first portion and the upper surface of the second portion in the second direction. an end surface of the intermediate frame located on the first lead frame side in the first direction is arranged closer to the second lead frame than an end surface of the second portion located on the second lead frame side in the first direction, The entire intermediate frame is arranged below the second lead frame in the second direction.

2. The semiconductor device according to claim 1, wherein A distance between the second portion and the intermediate frame in the first direction is shorter than a distance between an upper surface of the second portion and an upper surface of the intermediate frame in the second direction.

3. The semiconductor device according to claim 1 or 2, wherein: The shortest distance between the second portion and the intermediate frame is shorter than the shortest distance between the second portion and the second lead frame.

4. The semiconductor device according to any one of claims 1 to 3, wherein: A distance between an upper surface of the first portion and an upper surface of the second portion in the second direction is 2 mm or more.

5. The semiconductor device according to any one of claims 1 to 4, wherein: The first portion is exposed from the first side surface located above the center of the sealing member in the second direction.

6. The semiconductor device according to any one of claims 1 to 5, wherein: The sealing member further comprises an upper surface located on a side opposite to the lower surface, A portion of the first portion is exposed from the upper surface of the sealing member.

7. The semiconductor device according to any one of claims 1 to 6, wherein: The intermediate frame is continuous with the second lead frame.

8. The semiconductor device according to any one of claims 1 to 7, wherein: The first lead frame, the second lead frame, and the intermediate frame each have a collapsed surface formed by a press process. The collapsed surface formed on the intermediate frame faces the opposite side in the second direction to the collapsed surfaces formed on each of the first lead frame and the second lead frame.

9. The semiconductor device according to any one of claims 1 to 7, wherein: The first lead frame, the second lead frame, and the intermediate frame each have a collapsed surface formed by a press process. The collapsed surface formed on each of the intermediate frame and the second lead frame faces the opposite side to the collapsed surface formed on the first lead frame in the second direction.

10. The semiconductor device according to any one of claims 1 to 9, wherein: The first lead frame, the second lead frame, and the intermediate frame are made of the same material.

11. The semiconductor device according to any one of claims 1 to 10, wherein: Also available: a first wiring member that electrically connects the semiconductor element and a component constituting a part of the wiring circuit; and a second wiring member electrically connecting an element constituting a part of the wiring circuit and the second lead frame; The elements constituting a part of the wiring circuit, the first wiring member, and the second wiring member are sealed by the sealing member.

12. A power conversion device comprising: A main conversion circuit, comprising the semiconductor device according to any one of claims 1 to 11, the main conversion circuit converting input power and outputting the converted power; and The control circuit outputs a control signal for controlling the main conversion circuit to the main conversion circuit.

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