Light emitting diode packaging structure and manufacturing method thereof and light emitting panel

Abstract

The present invention discloses a light-emitting diode package structure, a method for manufacturing a light-emitting diode package structure, and a light-emitting panel, wherein the light-emitting diode package structure comprises a first insulating layer, a first conductive pattern, a second insulating layer, a second conductive pattern, a light-emitting diode element, and solder. The first conductive pattern has a first portion and a second portion, the first portion is filled into a through hole of the first insulating layer, and the second portion is arranged on the first insulating layer and connected to the first portion. The second insulating layer is arranged on the first insulating layer and covers the first conductive pattern. The second portion of the first conductive pattern is sandwiched between the first insulating layer and the second insulating layer. The second conductive pattern is arranged on the second insulating layer and electrically connected to the first conductive pattern. The light-emitting diode element is bonded to the second conductive pattern. The solder is arranged on the first portion of the first conductive pattern.

Description

Technical Field

[0001] The invention relates to a light emitting diode packaging structure, a manufacturing method of the light emitting diode packaging structure and a light emitting panel. Background Art

[0002] The LED display panel includes a driving backplane and a plurality of LED elements transferred to the driving backplane. Inheriting the characteristics of LEDs, the LED display panel has the advantages of power saving, high efficiency, high brightness and fast response time. In addition, compared with the organic light-emitting diode display panel, the LED display panel also has the advantages of easy color adjustment, long light-emitting life and no image burn-in. Therefore, the LED display panel is regarded as the next generation of display technology.

[0003] In the manufacturing process of the LED display panel, multiple LED elements need to be transposed to the driving backplane. In order to improve the transposition yield, multiple LED elements can be first packaged into a LED packaging structure, and then the LED packaging structure can be transposed to the driving backplane. In the manufacturing process of the LED packaging structure, solder needs to be formed on the conductive pattern inside the LED packaging structure to facilitate the bonding of the LED packaging structure with the driving backplane. However, in general, the solder is formed using a chemical plating process, and in the chemical plating process, there will be internal stress in the thin film acting on the conductive pattern of the LED packaging structure, making it easy for the conductive pattern to peel off from the inside of the LED packaging structure, affecting the manufacturing yield of the LED packaging structure. Summary of the invention

[0004] The invention provides a method for manufacturing a light emitting diode packaging structure, which can improve the manufacturing yield of the light emitting diode packaging structure.

[0005] The invention provides a light emitting diode packaging structure with high manufacturing yield.

[0006] The invention provides a light-emitting panel with high manufacturing yield.

[0007] The manufacturing method of the light-emitting diode packaging structure of the present invention includes the following steps: forming a release layer on a substrate; forming a first insulating layer on the release layer, wherein the first insulating layer has a through hole; forming a first conductive pattern on the first insulating layer, wherein a first portion of the first conductive pattern fills the through hole of the first insulating layer, and a second portion of the first conductive pattern is arranged on the first insulating layer and connected to the first portion; forming a second insulating layer on the first insulating layer to cover the first conductive pattern, wherein the second portion of the first conductive pattern is sandwiched between the first insulating layer and the second insulating layer; forming a second conductive pattern on the second insulating layer, wherein the second conductive pattern is electrically connected to the first conductive pattern; bonding the light-emitting diode element to the second conductive pattern; separating the release layer and the first insulating layer to expose the first portion of the first conductive pattern filled in the through hole of the first insulating layer; and forming solder on the first portion of the first conductive pattern.

[0008] The light-emitting diode package structure of the present invention comprises a first insulating layer, a first conductive pattern, a second insulating layer, a second conductive pattern, a light-emitting diode element and solder. The first insulating layer has a through hole. The first conductive pattern has a first part and a second part, the first part fills the through hole of the first insulating layer, and the second part is arranged on the first insulating layer and connected to the first part. The second insulating layer is arranged on the first insulating layer and covers the first conductive pattern. The second part of the first conductive pattern is sandwiched between the first insulating layer and the second insulating layer. The second conductive pattern is arranged on the second insulating layer and electrically connected to the first conductive pattern. The light-emitting diode element is bonded to the second conductive pattern. The solder is arranged on the first part of the first conductive pattern. The solder and the second conductive pattern are respectively located on opposite sides of the first conductive pattern.

[0009] The light-emitting panel of the present invention comprises the above-mentioned light-emitting diode packaging structure and a driving backplane, wherein the light-emitting diode packaging structure is bonded to the driving backplane.

[0010] In one embodiment of the present invention, the manufacturing method of the above-mentioned light-emitting diode packaging structure also includes: forming a laser blocking layer on the release layer after forming the release layer and before forming the first insulating layer; and after separating the release layer and the first insulating layer, removing the laser blocking layer to expose the first portion of the first conductive pattern filled in the through hole of the first insulating layer.

[0011] In one embodiment of the present invention, the projection area of ​​the first conductive pattern is larger than the projection area of ​​the through hole of the first insulating layer, and the projection area of ​​the through hole of the first insulating layer falls within the projection area of ​​the first conductive pattern.

[0012] In one embodiment of the present invention, the first portion and the second portion of the first conductive pattern define a recess of the first conductive pattern, the second insulating layer has a through hole overlapping the recess, and the second conductive pattern is electrically connected to the first conductive pattern through the through hole of the second insulating layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figures 1A to 1M is a cross-sectional schematic diagram of a manufacturing process of a light-emitting panel according to an embodiment of the present invention;

[0014] Figure 2 FIG. 4 is a schematic top view of a light emitting diode package structure according to an embodiment of the present invention.

[0015] Explanation of symbols

[0016] 10: Luminous panel

[0017] 100: Light-emitting diode packaging structure

[0018] 110:Substrate

[0019] 120: Release layer

[0020] 130: Laser blocking layer

[0021] 140: first insulating layer

[0022] 142, 162: Through hole

[0023] 150: first conductive pattern

[0024] 150a: Depression

[0025] 151: Part 1

[0026] 152: Part 2

[0027] 160: Second insulation layer

[0028] 170: second conductive pattern

[0029] 171: pad part

[0030] 172: Conductive part

[0031] 180: light absorbing layer

[0032] 190: Light Emitting Diode Components

[0033] 192: Transparent encapsulation layer

[0034] 194:Solder

[0035] 200: Driver backplane

[0036] T150, T160: film thickness DETAILED DESCRIPTION

[0037] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0038] It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it may be directly on or connected to another element, or an intermediate element may also exist. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intermediate elements. As used herein, "connection" may refer to physical and / or electrical connection. Furthermore, "electrical connection" or "coupling" may be the presence of other elements between two elements.

[0039] As used herein, "about", "approximately", or "substantially" includes the stated value and the average value within an acceptable deviation range of the particular value determined by one of ordinary skill in the art, taking into account the measurement in question and the particular amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used herein, "about", "approximately", or "substantially" can select a more acceptable deviation range or standard deviation depending on the optical property, etching property or other property, and can apply to all properties without a single standard deviation.

[0040] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and the present invention, and will not be interpreted as an idealized or overly formal meaning unless explicitly defined as such herein.

[0041] Figures 1A to 1M FIG. 4 is a cross-sectional schematic diagram of a manufacturing process of a light-emitting panel according to an embodiment of the present invention.

[0042] Please refer to Figure 1A First, a release layer 120 is formed on the substrate 110. In this embodiment, the substrate 110 is light-transmissive and can be penetrated by laser; the release layer 120 can be dissociated by laser. For example, in this embodiment, the material of the substrate 110 can be glass, quartz, organic polymer, or other applicable materials, but the present invention is not limited thereto.

[0043] Please refer to Figure 1BThen, in this embodiment, a laser blocking layer 130 may be selectively formed on the release layer 120. The laser blocking layer 130 may block the laser to prevent the laser from damaging components formed on the laser blocking layer 130 in subsequent manufacturing processes. For example, in this embodiment, the material of the laser blocking layer 130 may be metal, but the present invention is not limited thereto.

[0044] Please refer to Figure 1C , then, a first insulating layer 140 is formed on the release layer 120, wherein the first insulating layer 140 has a through hole 142. Specifically, in the present embodiment, the first insulating layer 140 can be directly formed on the laser blocking layer 130. However, the present invention is not limited thereto, and in another embodiment, the laser blocking layer 130 can be omitted, and the first insulating layer 140 can be directly formed on the release layer 120. The material of the first insulating layer 140 can be an organic material, an inorganic material, or a combination thereof. For example, in the present embodiment, the material of the first insulating layer 140 can be polyimide (PI), but the present invention is not limited thereto.

[0045] Please refer to Figure 1D Then, a first conductive pattern 150 is formed on the first insulating layer 140, wherein a first portion 151 of the first conductive pattern 150 is filled into the through hole 142 of the first insulating layer 140, and a second portion 152 of the first conductive pattern 150 is disposed on the first insulating layer 140 and connected to the first portion 151. In the present embodiment, the projection area of ​​the first conductive pattern 150 is larger than the projection area of ​​the through hole 142 of the first insulating layer 140, and the projection area of ​​the through hole 142 of the first insulating layer 140 falls within the projection area of ​​the first conductive pattern 150. For example, in the present embodiment, the material of the first conductive pattern 150 may be metal, but the present invention is not limited thereto.

[0046] In this embodiment, the film thickness T150 of the first conductive pattern 150 may be selectively thinner, and the first portion 151 and the second portion 152 of the first conductive pattern 150 may selectively define a recess 150a of the first conductive pattern 150, wherein the recess 150a of the first conductive pattern 150 may overlap the through hole 142 of the first insulating layer 140. However, the present invention is not limited thereto, and in other embodiments, the film thickness T150 of the first conductive pattern 150 may also be thicker, and the first conductive pattern 150 may not have the recess 150a.

[0047] Please refer to Figure 1E, then, a second insulating layer 160 is formed on the first insulating layer 140 to cover the first conductive pattern 150. The second insulating layer 160 is disposed on the first insulating layer 140 and covers the first conductive pattern 150. In particular, the second portion 152 of the first conductive pattern 150 is sandwiched between the first insulating layer 140 and the second insulating layer 160. The film thickness T160 of the second insulating layer 160 is greater than the film thickness T150 of the first conductive pattern 150, and the second insulating layer 160 and the first insulating layer 140 can sandwich the first conductive pattern 150 together and well. The material of the second insulating layer 160 can be an organic material, an inorganic material or a combination thereof. For example, in the present embodiment, the material of the second insulating layer 160 can be polyimide (PI), but the present invention is not limited thereto.

[0048] Please refer to Figure 1F , then, a second conductive pattern 170 is formed on the second insulating layer 160. The second conductive pattern 170 is disposed on the second insulating layer 160, and the second conductive pattern 170 is electrically connected to the first conductive pattern 150. Specifically, in the present embodiment, the second insulating layer 160 has a through hole 162, and the second conductive pattern 170 is electrically connected to the first conductive pattern 150 through the through hole 162 of the second insulating layer 160. In the present embodiment, the through hole 162 of the second insulating layer 160 may overlap the recess 150a of the first conductive pattern 150, but the present invention is not limited thereto. In the present embodiment, the material of the second conductive pattern 170 is, for example, metal, but the present invention is not limited thereto.

[0049] Please refer to Figure 1G Then, in this embodiment, a light absorbing layer 180 may be selectively formed on the second insulating layer 160 to cover at least a portion of the second conductive pattern 170. Specifically, in this embodiment. The second conductive pattern 170 may include a pad portion 171 and a conductive portion 172 outside the pad portion 171, wherein the light absorbing layer 180 covers the conductive portion 172 of the second conductive pattern 170 and exposes the pad portion 171 of the second conductive pattern 170. For example, in this embodiment, the material of the light absorbing layer 180 may be black resin, but the present invention is not limited thereto.

[0050] Please refer to Figure 1H Then, the light emitting diode element 190 is bonded to the second conductive pattern 170. Specifically, in this embodiment, the light emitting diode element 190 is bonded to the pad portion 171 of the second conductive pattern 170 exposed by the light absorbing layer 180. For example, in this embodiment, the light emitting diode element 190 is a micro light emitting diode (μLED), but the present invention is not limited thereto.

[0051] Please refer to Fig. 1INext, in this embodiment, a transparent encapsulation layer 192 is formed on the second insulating layer 160 to cover and protect the light emitting diode element 190 and the second conductive pattern 170 .

[0052] Please refer to Fig. 1I , Figure 1J and Figure 1K , then, the release layer 120 and the first insulating layer 140 are separated to expose the first portion 151 of the first conductive pattern 150 filled in the through hole 142 of the first insulating layer 140. Specifically, in the present embodiment, a laser de-bonding process may be first used to separate the release layer 120 from the substrate 110; then, the release layer 120 and the laser blocking layer 130 are removed to expose the first portion 151 of the first conductive pattern 150 filled in the through hole 142 of the first insulating layer 140. For example, in the present embodiment, the release layer 120 and the laser blocking layer 130 may be removed by an etching process, but the present invention is not limited thereto.

[0053] Please refer to Figure 1L , then, solder 194 is formed on the first portion 151 of the first conductive pattern 150. The solder 194 is disposed on the first portion 151 of the first conductive pattern 150, and the solder 194 and the second conductive pattern 170 are respectively located on opposite sides of the first conductive pattern 150. Thus, the light emitting diode package structure 100 of the present embodiment is completed. For example, in the present embodiment, the solder 194 may be formed on the first portion 151 of the first conductive pattern 150 by chemical plating; the material of the solder 194 may include nickel and gold, for example; but the present invention is not limited thereto.

[0054] It is worth mentioning that, since the second portion 152 of the first conductive pattern 150 is sandwiched between the first insulating layer 140 and the second insulating layer 160, even if the thickness difference between the solder 194 and the first conductive pattern 150 is large and the internal stress of the film of the first conductive pattern 150 is large, the first conductive pattern 150 is still not easy to peel off from the first insulating layer 140 and the second insulating layer 160. Therefore, the manufacturing yield of the light-emitting diode package structure 100 can be improved.

[0055] Figure 2 FIG. 4 is a schematic top view of a light emitting diode package structure according to an embodiment of the present invention. Figure 2 Illustration of the solder 194 of the LED package structure 100 is omitted.

[0056] Please refer to Figure 1L and Figure 2In this embodiment, the same LED package structure 100 may include a plurality of LED elements 190, and the plurality of LED elements 190 may be covered by the same transparent packaging layer 192. For example, in this embodiment, the plurality of LED elements 190 of the same LED package structure 100 may be a plurality of LED elements 190 for emitting red light, green light, and blue light, respectively, but the present invention is not limited thereto.

[0057] Please refer to Figure 1L and Figure 1M Then, the LED package structure 100 is transferred to the driving backplane 200, and the LED package structure 100 is bonded to the driving backplane 200. Thus, the light emitting panel 10 of the present embodiment is completed.

[0058] In the present embodiment, the driving backplane 200 may include a plurality of sub-pixel driving circuits (not shown), and each light-emitting diode element 190 is electrically connected to a corresponding sub-pixel driving circuit (not shown). For example, in the present embodiment, each sub-pixel driving circuit may include a data line (not shown), a scan line (not shown), a power line (not shown), a common line (not shown), a first transistor (not shown), a second transistor (not shown), and a capacitor (not shown), wherein a first end of the first transistor is electrically connected to the data line, a control end of the first transistor is electrically connected to the scan line, a second end of the first transistor is electrically connected to a control end of the second transistor, a first end of the second transistor is electrically connected to the power line, the capacitor is electrically connected to the second end of the first transistor and the first end of the second transistor, and a first electrode (not shown) and a second electrode (not shown) of the light-emitting diode element 190 may be electrically connected to the second end of the second transistor and the common line, respectively, but the present invention is not limited thereto.

Claims

1. A method for manufacturing a light emitting diode packaging structure, comprising: forming a release layer on the substrate; forming a first insulating layer on the release layer, wherein the first insulating layer has a through hole; forming a first conductive pattern on the first insulating layer, wherein a first portion of the first conductive pattern fills the through hole of the first insulating layer, and a second portion of the first conductive pattern is disposed on the first insulating layer and connected to the first portion; forming a second insulating layer on the first insulating layer to cover the first conductive pattern, wherein the second portion of the first conductive pattern is sandwiched between the first insulating layer and the second insulating layer; forming a second conductive pattern on the second insulating layer, wherein the second conductive pattern is electrically connected to the first conductive pattern; Joining the light emitting diode element to the second conductive pattern; Separating the release layer from the first insulating layer to expose the first portion of the first conductive pattern filled in the through hole of the first insulating layer; as well as Solder is formed on the first portion of the first conductive pattern.

2. The method for manufacturing the light emitting diode package structure according to claim 1, further comprising: After forming the release layer and before forming the first insulating layer, forming a laser blocking layer on the release layer; as well as After the release layer and the first insulating layer are separated, the laser blocking layer is removed to expose the first portion of the first conductive pattern filled in the through hole of the first insulating layer.

3. The method for manufacturing a light-emitting diode package structure as described in claim 1, wherein a projection area of ​​the first conductive pattern is larger than a projection area of ​​the through hole of the first insulating layer, and the projection area of ​​the through hole of the first insulating layer falls within the projection area of ​​the first conductive pattern.

4. The method for manufacturing a light-emitting diode packaging structure as described in claim 1, wherein the first portion and the second portion of the first conductive pattern define a recess of the first conductive pattern, the second insulating layer has a through hole overlapping the recess, and the second conductive pattern is electrically connected to the first conductive pattern through the through hole of the second insulating layer.

Images