Display panel and display device

By setting a color-changing functional layer and optical structure on the substrate of the OLED display panel, the problem of excessive light transmittance under strong light is solved, and the contrast and brightness are improved.

CN115394811BActive Publication Date: 2026-04-17SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
Filing Date
2022-08-24
Publication Date
2026-04-17

AI Technical Summary

Technical Problem

In strong light conditions, the light transmittance of transparent OLED display panels is too high, resulting in reduced contrast and affecting the display effect.

Method used

A color-changing functional layer is set on the substrate of the display panel. The photochromic effect of silver halide and copper oxide materials is used to reduce light transmittance under strong light and improve display brightness through semi-transparent and semi-reflective units and light selection units.

Benefits of technology

It reduces light transmittance in bright light environments to improve contrast and display quality, while maintaining transparent display functionality in low light environments.

✦ Generated by Eureka AI based on patent content.

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Abstract

This invention discloses a display panel and a display device. It includes a substrate, a color-changing functional layer, and a thin-film transistor layer. The color-changing functional layer is disposed on the substrate. The thin-film transistor layer is disposed on the side of the color-changing functional layer away from the substrate. The color-changing functional layer is in a first state under illumination by a first light source and in a second state under illumination by a second light source, wherein the light intensity of the first light source is greater than that of the second light source, and the light transmittance of the color-changing functional layer in the first state is less than that in the second state. This invention can reduce the light transmittance of the display panel under strong light conditions and prevent ambient light from passing through the display panel from the side of the substrate away from the thin-film transistor layer, thereby improving the contrast and display effect of the display panel.
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Description

Technical Field

[0001] This invention relates to the field of display technology, and more particularly to a display panel and a display device having the display panel. Background Technology

[0002] With the rapid development of modern display technology, organic light-emitting diode (OLED) display panels have emerged. OLED display panels are thinner, lighter, brighter, have lower power consumption, faster response, higher definition, better flexibility, and higher luminous efficiency than liquid crystal display (LCD) panels. They can meet consumers' new demands for display technology and have gradually become a research hotspot for major manufacturers.

[0003] Currently, for single-sided transparent OLED display panels, a transparent substrate is required to ensure that the OLED display panel has a high overall light transmittance. However, in outdoor environments with strong ambient light, when a transparent OLED display device is displaying normally, the high light transmittance of the OLED display panel allows ambient light from the back side of the transparent OLED display panel to easily pass through, which can affect the normal display effect of the OLED display panel, such as reducing the contrast ratio. Summary of the Invention

[0004] This invention provides a display panel and display device that can reduce the light transmittance of the display panel under strong light and improve the contrast and display effect of the display panel under strong light.

[0005] This invention provides a display panel, which includes:

[0006] substrate;

[0007] A color-changing functional layer is disposed on the substrate;

[0008] A thin-film transistor layer is disposed on the side of the color-changing functional layer away from the substrate;

[0009] The color-changing functional layer is in a first state under the illumination of the first light and in a second state under the illumination of the second light. The light intensity of the first light is greater than that of the second light, and the light transmittance of the color-changing functional layer in the first state is less than that in the second state.

[0010] In one embodiment of the present invention, the color-changing functional layer includes a first color-changing sublayer and a first catalyst sublayer stacked on the substrate, wherein the material of the first color-changing sublayer includes silver halide material and the material of the first catalyst sublayer includes copper oxide material.

[0011] In one embodiment of the present invention, the color-changing functional layer further includes a second catalyst sublayer disposed on the side of the first color-changing sublayer away from the first catalyst sublayer, and the material of the second catalyst sublayer is the same as the material of the first catalyst sublayer.

[0012] In one embodiment of the present invention, the first color-changing sublayer is located between the first catalyst sublayer and the substrate. The color-changing functional layer further includes a second color-changing sublayer disposed on the side of the first catalyst sublayer away from the first color-changing sublayer, and a third catalyst sublayer disposed on the side of the second color-changing sublayer away from the first catalyst sublayer. The material of the second color-changing sublayer is the same as that of the first color-changing sublayer, and the material of the third catalyst sublayer is the same as that of the first catalyst sublayer.

[0013] In one embodiment of the present invention, the thickness of the first color-changing sublayer is greater than the thickness of the second color-changing sublayer.

[0014] In one embodiment of the present invention, the material of the color-changing functional layer includes an organic photochromic material.

[0015] In one embodiment of the present invention, the light transmittance of the color-changing functional layer in the first state is less than or equal to 20%.

[0016] In one embodiment of the present invention, the display panel further includes a light-emitting functional layer disposed on the side of the thin film transistor layer away from the color-changing functional layer, the light-emitting functional layer including a plurality of light-emitting units, a plurality of transflective units, and a plurality of light-selective units;

[0017] In this embodiment, one of the transflective units is located between one of the light-emitting units and the thin-film transistor layer, and one of the light selection units is located on the side of one of the light-emitting units away from the corresponding transflective unit, and the wavelength of the light passing through the light selection unit is the same as the wavelength of the light emitted by the corresponding light-emitting unit.

[0018] In one embodiment of the present invention, the orthogonal projection of each light-emitting unit on the substrate is located within the coverage area of ​​the orthogonal projection of a corresponding transflective unit on the substrate, and the orthogonal projection of each light-emitting unit on the substrate is located within the coverage area of ​​the orthogonal projection of a corresponding light-selecting unit on the substrate.

[0019] According to the above-mentioned objectives of the present invention, embodiments of the present invention also provide a display device, the display device including a device body and a display panel, wherein the display panel and the device body are integrated into one unit.

[0020] The beneficial effects of the present invention are as follows: By setting a color-changing functional layer on the substrate, the light transmittance of the color-changing functional layer under the illumination of the first light is less than that under the illumination of the second light, and the light intensity of the first light is greater than that of the second light, thereby reducing the light transmittance of the display panel when the light is strong and preventing ambient light from passing through the display panel from the side of the substrate away from the thin film transistor layer, thereby improving the contrast and display effect of the display panel. Attached Figure Description

[0021] The technical solution and other beneficial effects of the present invention will become apparent from the following detailed description of specific embodiments of the invention, in conjunction with the accompanying drawings.

[0022] Figure 1 This is a schematic diagram of a display panel provided in an embodiment of the present invention;

[0023] Figure 2 This is a schematic diagram of another structure of the display panel provided in an embodiment of the present invention;

[0024] Figure 3 This is a schematic diagram of another structure of the display panel provided in an embodiment of the present invention;

[0025] Figure 4 This is a schematic diagram of another structure of the display panel provided in an embodiment of the present invention;

[0026] Figures 5 to 9 This is a schematic diagram illustrating the manufacturing process of a display panel provided in an embodiment of the present invention;

[0027] Figures 10 to 15 This is a schematic diagram illustrating another manufacturing process of the display panel provided in an embodiment of the present invention. Detailed Implementation

[0028] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0029] The following disclosure provides many different embodiments or examples for implementing various structures of the invention. To simplify the disclosure, specific examples of components and arrangements are described below. These are merely examples and are not intended to limit the invention. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, examples of various specific processes and materials are provided in this invention, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0030] This invention provides a display panel, please refer to... Figure 1 The display panel includes a substrate 10, a color-changing functional layer 20, and a thin-film transistor layer 30; wherein the color-changing functional layer 20 is disposed on the substrate 10, and the thin-film transistor layer 30 is disposed on the side of the color-changing functional layer 20 away from the substrate 10.

[0031] Furthermore, the color-changing functional layer 20 is in a first state under the illumination of the first light and in a second state under the illumination of the second light. The light intensity of the first light is greater than that of the second light. The light transmittance of the color-changing functional layer 20 in the first state is less than that in the second state.

[0032] In the implementation process, the embodiments of the present invention provide a color-changing functional layer 20 on the substrate 10, such that the light transmittance of the color-changing functional layer 20 under the illumination of the first light is less than that under the illumination of the second light, and the light intensity of the first light is greater than that of the second light, so as to reduce the light transmittance of the display panel when the light is strong, and prevent ambient light from passing through the display panel on the side of the substrate 10 away from the thin film transistor layer 30, thereby improving the contrast and display effect of the display panel.

[0033] It should be noted that the first ray and the second ray described in the embodiments of the present invention can be ultraviolet light or sunlight, and are not limited here.

[0034] Specifically, in one embodiment of the present invention, please continue to refer to... Figure 1 The display panel includes a substrate 10, a color-changing functional layer 20 disposed on the substrate 10, a thin film transistor layer 30 disposed on the color-changing functional layer 20, a light-emitting functional layer 40 disposed on the thin film transistor layer 30, and an encapsulation layer 50 disposed on the light-emitting functional layer 40.

[0035] In this embodiment of the invention, when the display panel is a rigid display panel, the substrate 10 includes a glass substrate 12 and a flexible substrate 11 disposed on the glass substrate 12. The flexible substrate 11 can be made of polyimide. Alternatively, when the display panel is a flexible display panel, the substrate 10 only includes the flexible substrate 11. The choice between the two can be made according to actual needs and is not limited here. The substrate 10 provided in this embodiment of the invention is a transparent substrate, and the display panel provided in this embodiment of the invention can be used for transparent displays.

[0036] The color-changing functional layer 20 is disposed on the substrate 10, specifically located on the side of the flexible substrate 11 away from the glass substrate 12.

[0037] A thin-film transistor layer 30 is disposed on the side of the color-changing functional layer 20 away from the substrate 10. The thin-film transistor layer 30 includes an insulating layer 31 disposed on the color-changing functional layer 20, a gate insulating layer 32 disposed on the insulating layer 31, an interlayer dielectric layer 33 disposed on the gate insulating layer 32, and a thin-film transistor 34 encapsulated in the above-mentioned film layers. The thin-film transistor 34 includes a gate 341 disposed on the insulating layer 31 and covered by the gate insulating layer 32, an active layer 342 disposed on the gate insulating layer 32 and located above the gate 341, and a source 343 and a drain 344 disposed on the gate insulating layer 32 and located on both sides of the active layer 342. The source 343 and the drain 344 overlap with both sides of the active layer 342, and the interlayer dielectric layer 33 covers the active layer 342, the source 343, and the drain 344.

[0038] The light-emitting functional layer 40 includes an anode 44 disposed on the side of the thin-film transistor layer 30 away from the color-changing functional layer 20, a pixel definition layer 45 disposed on the side of the anode 44 away from the thin-film transistor layer 30, and a cathode 46 disposed on the side of the pixel definition layer 45 away from the anode 44; wherein, the pixel definition layer 45 defines a plurality of pixel openings 451, and the light-emitting functional layer 40 also includes a plurality of light-emitting units 41 disposed within the plurality of pixel openings 451.

[0039] The encapsulation layer 50 is disposed on the side of the cathode 46 away from the pixel definition layer 45 and covers the cathode 46; optionally, the encapsulation layer 50 can be a stacked structure of inorganic and organic layers, which is not limited here.

[0040] In an embodiment of the present invention, the color-changing functional layer 20 includes a first color-changing sublayer 21 disposed on a substrate 10, and a first catalyst sublayer 22 and a second catalyst sublayer 23 disposed on opposite sides of the first color-changing sublayer 21; optionally, the second catalyst sublayer 23 is located between the substrate 10 and the first color-changing sublayer 21, and the first catalyst sublayer 22 is located on the side of the first color-changing sublayer 21 away from the second catalyst sublayer 23.

[0041] Optionally, the material of the first color-changing sublayer 21 includes silver halide, such as silver chloride, silver bromide, or silver iodide; the materials of the first catalyst sublayer 22 and the second catalyst sublayer 23 can be copper oxide. Furthermore, the thickness of the first color-changing sublayer 21 can be approximately 100 micrometers, and the thicknesses of both the first catalyst sublayer 22 and the second catalyst sublayer 23 can be greater than or equal to 200 angstroms and less than or equal to 300 angstroms.

[0042] Furthermore, the color-changing functional layer 20 can be in a first state under the illumination of the first light and in a second state under the illumination of the second light. The light intensity of the first light is greater than that of the second light. In the first state, the light transmittance of the color-changing functional layer 20 is less than that in the second state. That is, the color-changing functional layer 20 provided in this embodiment can reduce its light transmittance when the light is strong. This reduces the amount of light passing through the display panel from the side of the substrate 10 away from the thin-film transistor layer 30. Therefore, when the display panel provided in this embodiment is used for transparent display, it can improve the phenomenon of reduced contrast when strong light passes through the back of the display panel, effectively improving the display effect. Furthermore, when the ambient light is weak, the color-changing functional layer 20 can increase its light transmittance to achieve a transparent state, thus not affecting the transparent display function of the display panel.

[0043] The color-changing functional layer 20 has a light transmittance of less than or equal to 20% in the first state, so as to ensure that the color-changing functional layer 20 has sufficient blocking effect on the back light of the substrate 10 in a strong light environment, so as to effectively improve the contrast of the display panel.

[0044] It should be noted that the material of the first color-changing sublayer 21 is silver halide. Under the first light irradiation, that is, under strong light irradiation, silver halide can decompose to obtain halogen and silver, producing tiny grains, which reduces the light transmittance of the color-changing functional layer 20. When the color-changing functional layer 20 is irradiated by the second light, that is, under weak light irradiation, halogen and silver are catalyzed by copper oxide to regenerate silver halide, thereby increasing the light transmittance.

[0045] In this embodiment of the invention, the light-emitting functional layer 40 further includes a plurality of transflective units 42 and a plurality of light selection units 43, wherein a transflective unit 42 is located between a light-emitting unit 41 and a thin film transistor layer 30, and a light selection unit 43 is located on the side of a light-emitting unit 41 away from the corresponding transflective unit 42, and the wavelength of the light passing through the light selection unit 43 is the same as the wavelength of the light emitted by its corresponding light-emitting unit 41. When the display panel is in a strong light environment, the strong light shining on the display panel from one side of the display surface will reduce the display brightness as seen by the human eye, seriously affecting the display effect. However, in this embodiment of the invention, when light shines on the light-emitting functional layer 40 from one side of the display surface, the semi-transparent and semi-reflective unit 42 can reflect the light. After the light is reflected to the light selection unit 43, the light wavelength is selected by the light selection unit 43 and can be transformed into light with the same color as the light emitted by the light-emitting unit 41. This effectively improves the light intensity of the corresponding area of ​​each light-emitting unit 41, thereby improving the display brightness and display effect of the display panel in a strong light environment.

[0046] Optionally, the reflectivity of the semi-transparent and semi-reflective unit 42 is greater than or equal to 70%, and the material of the light selection unit 43 can be a color filter material, i.e., a color resist material.

[0047] Furthermore, the orthographic projection of each light-emitting unit 41 on the substrate 10 is within the coverage area of ​​the orthographic projection of the corresponding transflective unit 42 on the substrate 10, and the orthographic projection of each light-emitting unit 41 on the substrate 10 is within the coverage area of ​​the orthographic projection of the corresponding light-selecting unit 43 on the substrate 10.

[0048] In this embodiment of the invention, the interlayer dielectric layer 33 includes a plurality of vias 331 and a plurality of trenches 332, wherein the anode 44 passes through the vias 331 and is electrically connected to the drain 344 of the thin-film transistor 34 to realize the transmission of electrical signals; the transflective unit 42 is disposed in the trench 332, and the depth of the trench 332 may be greater than or equal to the thickness of the transflective unit 42; the encapsulation layer 50 covers a plurality of light selection units 43.

[0049] Optionally, the via 331 and the groove 332 are integrally formed, that is, the via 331 and the groove 332 can be formed in the same photomask. When the depths of the via 331 and the groove 332 are different, a semi-transparent mask can be used for fabrication.

[0050] Continuing from the above, this embodiment of the invention provides a color-changing functional layer 20 on the substrate 10, such that the light transmittance of the color-changing functional layer 20 under the illumination of the first light is less than that under the illumination of the second light, and the light intensity of the first light is greater than that of the second light. This reduces the light transmittance of the display panel under strong light conditions, preventing ambient light from the side of the substrate 10 away from the thin-film transistor layer 30 from passing through the display panel, thereby improving the contrast and display effect of the display panel. Furthermore, this embodiment of the invention provides a transflective unit 42 below the light-emitting unit 41 and a light selection unit 43 above the light-emitting unit 41, which effectively increases the light intensity of the corresponding area of ​​each light-emitting unit 41, thereby improving the display brightness and display effect of the display panel in strong light environments.

[0051] In another embodiment of the present invention, please refer to Figure 2 The difference between this embodiment and the previous embodiment is that the color-changing functional layer 20 includes a first color-changing sub-layer 21 disposed on the substrate 10, a first catalyst sub-layer 22 disposed on the side of the first color-changing sub-layer 21 away from the substrate 10, a second color-changing sub-layer 24 disposed on the side of the first catalyst sub-layer 22 away from the first color-changing sub-layer 21, and a third catalyst sub-layer 25 disposed on the side of the second color-changing sub-layer 24 away from the first catalyst sub-layer 22.

[0052] The materials of the first color-changing sublayer 21 and the second color-changing sublayer 24 can both be silver halide materials, and the materials of the first catalyst sublayer 22 and the third catalyst sublayer 25 can both be copper oxide materials.

[0053] Optionally, the thickness of the first color-changing sub-layer 21 is greater than the thickness of the second color-changing sub-layer 24, and the thickness of the first color-changing sub-layer 21 is greater than or equal to 20 micrometers and less than or equal to 50 micrometers, with a light transmittance of less than or equal to 20%; while the thickness of the second color-changing sub-layer 24 is greater than or equal to 10 micrometers and less than or equal to 25 micrometers, with a light transmittance of less than or equal to 40%; and the thickness of the first color-changing sub-layer 21 can be twice the thickness of the second color-changing sub-layer 24. In this embodiment of the invention, by increasing the number of color-changing sub-layers, the blocking effect of the color-changing functional layer 20 on strong light is improved. At the same time, the thickness of the first color-changing sub-layer 21 and the second color-changing sub-layer 24 is differentiated to ensure that the thickness of the display panel is not too thick, thus affecting the thinness of the display panel.

[0054] It is understood that in other embodiments of the present invention, the thickness of the first color-changing sublayer 21 may be less than the thickness of the second color-changing sublayer 24, which is not limited here.

[0055] Continuing from the above, this embodiment of the invention provides a color-changing functional layer 20 on the substrate 10, such that the light transmittance of the color-changing functional layer 20 under the illumination of the first light is less than that under the illumination of the second light, and the light intensity of the first light is greater than that of the second light. This reduces the light transmittance of the display panel under strong light conditions, preventing ambient light from the side of the substrate 10 away from the thin-film transistor layer 30 from passing through the display panel, thereby improving the contrast and display effect of the display panel. Furthermore, in this embodiment, the blocking effect of the color-changing functional layer 20 against strong light can be improved by increasing the number of color-changing sub-layers in the color-changing functional layer 20. In addition, this embodiment of the invention provides a semi-transparent, semi-reflective unit 42 below the light-emitting unit 41 and a light selection unit 43 above the light-emitting unit 41, thereby effectively increasing the light intensity of the corresponding area of ​​each light-emitting unit 41, and improving the display brightness and display effect of the display panel in strong light environments.

[0056] In another embodiment of the present invention, please refer to Figure 3 The difference between this embodiment and the first embodiment is that the substrate 10 only includes a flexible substrate 11, that is, the display panel provided in this embodiment can be used for flexible transparent display.

[0057] Continuing from the above, this embodiment of the invention provides a color-changing functional layer 20 on the substrate 10, such that the light transmittance of the color-changing functional layer 20 under the illumination of the first light is less than that under the illumination of the second light, and the light intensity of the first light is greater than that of the second light. This reduces the light transmittance of the display panel under strong light conditions, preventing ambient light from the side of the substrate 10 away from the thin-film transistor layer 30 from passing through the display panel, thereby improving the contrast and display effect of the display panel. Furthermore, this embodiment of the invention provides a transflective unit 42 below the light-emitting unit 41 and a light selection unit 43 above the light-emitting unit 41, which effectively increases the light intensity of the corresponding area of ​​each light-emitting unit 41, thereby improving the display brightness and display effect of the display panel in strong light environments.

[0058] In another embodiment of the present invention, please refer to Figure 4 The difference between this embodiment and the first embodiment is that the material of the color-changing functional layer 20 is different. In this embodiment, the material of the color-changing functional layer 20 includes organic photochromic materials, such as spiropyran, benzopyran, or azazine.

[0059] Continuing from the above, this embodiment of the invention provides a color-changing functional layer 20 on the substrate 10, such that the light transmittance of the color-changing functional layer 20 under the illumination of the first light is less than that under the illumination of the second light, and the light intensity of the first light is greater than that of the second light. This reduces the light transmittance of the display panel under strong light conditions, preventing ambient light from the side of the substrate 10 away from the thin-film transistor layer 30 from passing through the display panel, thereby improving the contrast and display effect of the display panel. Furthermore, this embodiment of the invention provides a transflective unit 42 below the light-emitting unit 41 and a light selection unit 43 above the light-emitting unit 41, which effectively increases the light intensity of the corresponding area of ​​each light-emitting unit 41, thereby improving the display brightness and display effect of the display panel in strong light environments.

[0060] In addition, the present invention also provides a method for manufacturing the display panel described in the above embodiments. Specifically, the method for manufacturing the display panel provided by the present invention will be described in detail below with reference to specific embodiments.

[0061] In one embodiment of the present invention, please refer to Figure 1 , Figures 5 to 9 The manufacturing method of this display panel includes:

[0062] A polyimide material layer is coated on the glass substrate 12 and cured to obtain a flexible substrate 11, thus obtaining the substrate 10. Figure 5 As shown.

[0063] Then, a second catalyst sublayer 23 can be deposited on the side of the flexible substrate 11 away from the glass substrate 12 using a sputtering process. The material of the second catalyst sublayer 23 can be copper oxide, and its thickness can be 200 angstroms. Figure 6 As shown.

[0064] Next, a layer of uniformly distributed and high-density ultrafine silver halide gelatin is coated on the side of the second catalyst sublayer 23 away from the substrate 10, and then baked to form a film to obtain the first color-changing sublayer 21, as shown. Figure 7 As shown.

[0065] Then, a sputtering process is used to form a first catalyst sublayer 22 on the side of the first color-changing sublayer 21 away from the second catalyst sublayer 23. The material of the first catalyst sublayer 22 can be copper oxide, and its thickness can be 200 angstroms; to form the color-changing functional layer 20, such as... Figure 8 As shown.

[0066] Then, a thin film transistor layer 30 can be formed sequentially on the color-changing functional layer 20, specifically including an insulating layer 31 disposed on the color-changing functional layer 20, a gate insulating layer 32 disposed on the insulating layer 31, an interlayer dielectric layer 33 disposed on the gate insulating layer 32, and a thin film transistor 34 covering the above-mentioned film layer; wherein, the thin film transistor 34 includes a gate 341 disposed on the insulating layer 31 and covered by the gate insulating layer 32, an active layer 342 disposed on the gate insulating layer 32 and located above the gate 341, and a source 343 and a drain 344 disposed on the gate insulating layer 32 and located on both sides of the active layer 342, wherein the source 343 and the drain 344 are respectively connected to both sides of the active layer 342, and the interlayer dielectric layer 33 covers the active layer 342, the source 343 and the drain 344.

[0067] Next, a semi-permeable mask can be used to form multiple vias 331 and multiple grooves 332 of different depths in the interlayer dielectric layer 33, such as... Figure 9 As shown.

[0068] The solution of nano-silver particles can be prepared in the tank 332 by inkjet printing process, so as to form multiple semi-transparent and semi-reflective units 42 in multiple tanks 332, and the thickness of the semi-transparent and semi-reflective units 42 can be 300 angstroms.

[0069] An anode 44 is formed on the interlayer dielectric layer 33 by vacuum evaporation or magnetic sputtering, and the anode 44 passes through the via 331 and contacts the drain 344.

[0070] A pixel definition layer 45 is formed on the anode 44, and a patterning process is performed on the pixel definition layer 45 to form multiple pixel openings 451, and the multiple pixel openings 451 are set one-to-one with multiple transflective units 42.

[0071] Multiple light-emitting units 41 are formed within multiple pixel openings 451, and the multiple light-emitting units 41 are arranged in a one-to-one correspondence with multiple transflective units 42. The orthogonal projection of each light-emitting unit 41 on the substrate 10 is located within the coverage area of ​​the orthogonal projection of the corresponding transflective unit 42 on the substrate 10.

[0072] A cathode 46 is formed on the pixel definition layer 45 using vacuum evaporation or magnetic sputtering processes.

[0073] Multiple light selection units 43 are formed on the cathode 46 by plasma-enhanced chemical vapor deposition, and the multiple light selection units 43 are arranged in a one-to-one correspondence with multiple light-emitting units 41; the material of the light selection unit 43 includes color resist material, and the orthographic projection of each light-emitting unit 41 on the substrate 10 is within the coverage area of ​​the orthographic projection of the corresponding light selection unit 43 on the substrate 10.

[0074] An encapsulation layer 50 is formed on the cathode 46 to cover multiple light selection units 43, and the encapsulation layer 50 can be a stacked structure of inorganic and organic layers, which is not limited here. Figure 1 As shown.

[0075] In another embodiment of the invention, please refer to Figure 2 , Figures 10 to 15 The manufacturing method of this display panel includes:

[0076] A polyimide material layer is coated on the glass substrate 12 and cured to obtain a flexible substrate 11, thus obtaining the substrate 10. Figure 10 As shown.

[0077] Next, a layer of uniformly distributed and high-density ultrafine silver halide gelatin is coated on the side of the second catalyst sublayer 23 away from the substrate 10, and then baked to form a film to obtain the first color-changing sublayer 21, as shown. Figure 11 As shown.

[0078] Then, a first catalyst sublayer 22 can be deposited on the side of the flexible substrate 11 away from the glass substrate 12 using a sputtering process. The material of the first catalyst sublayer 22 can be copper oxide, and its thickness can be 200 angstroms. Figure 12 As shown.

[0079] Next, a layer of uniformly distributed and high-density ultrafine silver halide gelatin particles is coated on the side of the first catalyst sublayer 22 away from the first color-changing sublayer 21, and then baked to form a film to obtain the second color-changing sublayer 24. The thickness of the second color-changing sublayer 24 is less than the thickness of the first color-changing sublayer 21. Specifically, the thickness of the first color-changing sublayer 21 can be twice the thickness of the second color-changing sublayer 24. Figure 13 As shown.

[0080] Then, a third catalyst sublayer 25 is formed on the side of the second color-changing sublayer 24 away from the first catalyst sublayer 22 using a sputtering process. The material of the third catalyst sublayer 25 can be copper oxide, and its thickness can be 200 angstroms; to form the color-changing functional layer 20, such as... Figure 14 As shown.

[0081] Then, a thin film transistor layer 30 can be formed sequentially on the color-changing functional layer 20, specifically including an insulating layer 31 disposed on the color-changing functional layer 20, a gate insulating layer 32 disposed on the insulating layer 31, an interlayer dielectric layer 33 disposed on the gate insulating layer 32, and a thin film transistor 34 covering the above-mentioned film layer; wherein, the thin film transistor 34 includes a gate 341 disposed on the insulating layer 31 and covered by the gate insulating layer 32, an active layer 342 disposed on the gate insulating layer 32 and located above the gate 341, and a source 343 and a drain 344 disposed on the gate insulating layer 32 and located on both sides of the active layer 342, wherein the source 343 and the drain 344 are respectively connected to both sides of the active layer 342, and the interlayer dielectric layer 33 covers the active layer 342, the source 343 and the drain 344.

[0082] Next, a semi-permeable mask can be used to form multiple vias 331 and multiple grooves 332 of different depths in the interlayer dielectric layer 33, such as... Figure 15 As shown.

[0083] The solution of nano-silver particles can be prepared in the tank 332 by inkjet printing process, so as to form multiple semi-transparent and semi-reflective units 42 in multiple tanks 332, and the thickness of the semi-transparent and semi-reflective units 42 can be 300 angstroms.

[0084] An anode 44 is formed on the interlayer dielectric layer 33 by vacuum evaporation or magnetic sputtering, and the anode 44 passes through the via 331 and contacts the drain 344.

[0085] A pixel definition layer 45 is formed on the anode 44, and a patterning process is performed on the pixel definition layer 45 to form multiple pixel openings 451, and the multiple pixel openings 451 are set one-to-one with multiple transflective units 42.

[0086] Multiple light-emitting units 41 are formed within multiple pixel openings 451, and the multiple light-emitting units 41 are arranged in a one-to-one correspondence with multiple transflective units 42. The orthogonal projection of each light-emitting unit 41 on the substrate 10 is located within the coverage area of ​​the orthogonal projection of the corresponding transflective unit 42 on the substrate 10.

[0087] A cathode 46 is formed on the pixel definition layer 45 using vacuum evaporation or magnetic sputtering processes.

[0088] Multiple light selection units 43 are formed on the cathode 46 by plasma-enhanced chemical vapor deposition, and the multiple light selection units 43 are arranged in a one-to-one correspondence with multiple light-emitting units 41; the material of the light selection unit 43 includes color resist material, and the orthographic projection of each light-emitting unit 41 on the substrate 10 is within the coverage area of ​​the orthographic projection of the corresponding light selection unit 43 on the substrate 10.

[0089] An encapsulation layer 50 is formed on the cathode 46 to cover multiple light selection units 43, and the encapsulation layer 50 can be a stacked structure of inorganic and organic layers, which is not limited here. Figure 2 As shown.

[0090] In addition, embodiments of the present invention also provide a display device, which includes a device body and a display panel as described in the above embodiments, wherein the display panel and the device body are integrated into one unit.

[0091] The main body of the device may include a middle frame, frame adhesive, power supply, etc., which are not limited here.

[0092] In summary, by providing a color-changing functional layer 20 on the substrate 10, the light transmittance of the color-changing functional layer 20 under the illumination of the first light is less than that under the illumination of the second light, and the light intensity of the first light is greater than that of the second light, thereby reducing the light transmittance of the display panel when the light is strong and preventing ambient light from the side of the substrate 10 away from the thin-film transistor layer 30 from passing through the display panel, thus improving the contrast and display effect of the display panel. Furthermore, by providing a transflective unit 42 below the light-emitting unit 41 and a light selection unit 43 above the light-emitting unit 41, the light intensity of the corresponding area of ​​each light-emitting unit 41 can be effectively increased, thereby improving the display brightness and display effect of the display panel in strong light environments.

[0093] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0094] The above provides a detailed description of a display panel and display device provided by the embodiments of the present invention. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only for the purpose of helping to understand the technical solutions and core ideas of the present invention. Those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A display panel, characterized by, include: substrate; A color-changing functional layer is disposed on the substrate; A thin-film transistor layer is disposed on the side of the color-changing functional layer away from the substrate; The color-changing functional layer is in a first state under the illumination of the first light and in a second state under the illumination of the second light. The light intensity of the first light is greater than that of the second light, and the light transmittance of the color-changing functional layer in the first state is less than that in the second state. The display panel further includes a light-emitting functional layer disposed on the side of the thin-film transistor layer away from the color-changing functional layer. The light-emitting functional layer includes a plurality of light-emitting units, a plurality of transflective units, and a plurality of light-selecting units. Among them, one transflective unit is located between one light-emitting unit and the thin-film transistor layer, and one light-selecting unit is located on the side of one light-emitting unit away from the corresponding transflective unit. The wavelength of the light passing through the light-selecting unit is the same as the wavelength of the light emitted by the corresponding light-emitting unit.

2. The display panel of claim 1, wherein, The color-changing functional layer includes a first color-changing sublayer and a first catalyst sublayer stacked on the substrate, wherein the material of the first color-changing sublayer includes silver halide material and the material of the first catalyst sublayer includes copper oxide material.

3. The display panel of claim 2, wherein, The color-changing functional layer further includes a second catalyst sublayer disposed on the side of the first color-changing sublayer away from the first catalyst sublayer, and the material of the second catalyst sublayer is the same as that of the first catalyst sublayer.

4. The display panel of claim 2, wherein, The first color-changing sublayer is located between the first catalyst sublayer and the substrate. The color-changing functional layer further includes a second color-changing sublayer disposed on the side of the first catalyst sublayer away from the first color-changing sublayer, and a third catalyst sublayer disposed on the side of the second color-changing sublayer away from the first catalyst sublayer. The material of the second color-changing sublayer is the same as that of the first color-changing sublayer, and the material of the third catalyst sublayer is the same as that of the first catalyst sublayer.

5. The display panel of claim 4, wherein, The thickness of the first color-changing sublayer is greater than the thickness of the second color-changing sublayer.

6. The display panel according to claim 1, characterized in that, The material of the color-changing functional layer includes organic photochromic materials.

7. The display panel according to claim 1, characterized in that, In the first state, the light transmittance of the color-changing functional layer is less than or equal to 20%.

8. The display panel according to claim 1, characterized in that, The orthographic projection of each of the light-emitting units on the substrate is within the coverage area of ​​the orthographic projection of the corresponding transflective unit on the substrate, and the orthographic projection of each of the light-emitting units on the substrate is within the coverage area of ​​the orthographic projection of the corresponding light-selecting unit on the substrate.

9. A display device, characterized in that, The display device includes a device body and a display panel as described in any one of claims 1 to 8, wherein the display panel and the device body are integrated into one unit.

Citation Information

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