Micro-particle MEMS sensor based on PZT piezoelectric material and preparation method

Abstract

The present invention belongs to the technical field of micro-particle MEMS sensors, and specifically relates to a micro-particle MEMS sensor based on PZT piezoelectric material and a preparation method. The micro-particle MEMS sensor based on PZT piezoelectric material includes: a beam frame and a detection component; wherein the first electrode lead portion and the second electrode lead portion obtain the concentration of particles in the reaction environment by detecting the voltage change of the vibration portion; and the first electrode lead portion and the second electrode lead portion apply a corresponding square wave alternating voltage signal to the vibration portion to remove particles accumulated on the surface of the vibration portion; the present invention can solve the problem of the sensitive element being disabled when the number of particles adsorbed by the sensitive element reaches saturation when the particle concentration in the environment is detected by the surface adsorption principle of the sensitive element, and the first electrode lead portion and the second electrode lead portion apply a corresponding square wave alternating voltage signal to the vibration portion, so that the particles are separated from the surface of the detection component to achieve self-cleaning.

Description

Technical Field

[0001] The present invention belongs to the technical field of micro-particle MEMS sensors, and in particular relates to a micro-particle MEMS sensor based on PZT piezoelectric material and a preparation method thereof. Background Art

[0002] MEMS stands for micro-electromechanical system, PZT stands for lead zirconate titanate piezoelectric ceramics, and LNO stands for lanthanum nickelate.

[0003] Microelectromechanical system (MEMS) sensors are already in practical use for detecting fine particles in the environment, using electrical signals to identify changes in the particle count. In practice, various physical factors (van der Waals attraction, electrostatic force, capillary force, etc.) inevitably cause dust particles to accumulate on the surface of sensitive components, altering the system's initial state and causing changes in relevant physical quantities. By monitoring these changes, the particle concentration in the environment can be measured. However, when the accumulated number of particles saturates the sensitive component's measurement range, the sensor loses its measurement capability, limiting the application of such devices. Existing solutions typically require regular maintenance and cleaning, or outright replacement, which requires ongoing investment in equipment use and increases operating costs.

[0004] Therefore, there is an urgent need to develop a new micro-particle MEMS sensor based on PZT piezoelectric material and its preparation method to solve the above problems. Summary of the Invention

[0005] The purpose of the present invention is to provide a micro-particle MEMS sensor based on PZT piezoelectric material and a preparation method thereof.

[0006] In order to solve the above technical problems, the present invention provides a micro-particle MEMS sensor based on PZT piezoelectric material, which includes: a beam and a detection component; wherein a detection hole is opened in the center of the beam, the detection component is arranged on the beam, and the detection component is arranged in an S shape; the detection component is divided into a first electrode lead portion, a vibration portion and a second electrode lead portion, the first electrode lead portion and the second electrode lead portion are fixed on the beam, and the vibration portion is suspended above the detection hole; the first electrode lead portion and the second electrode lead portion obtain the concentration of particles in the reaction environment by detecting the voltage change of the vibration portion; and the first electrode lead portion and the second electrode lead portion apply a corresponding square wave alternating voltage signal to the vibration portion to remove particles accumulated on the surface of the vibration portion.

[0007] Furthermore, the adhesion force between the particles and the surface of the vibrating part is: Where R is the characteristic radius of the particle, M is the mass of the particle; the separation force of the particle from the vibrating surface is: F det =a surface *M; where a surfaceis the acceleration caused by the surface vibration of the vibrating part; when F det >F ad , that is, a surface >10 6 g to remove particles accumulated on the surface of the vibration part.

[0008] Furthermore, the first electrode lead portion and the second electrode lead portion apply corresponding square wave alternating voltage signals to the vibration portion, and the driving voltage Vpp=20V, and the frequency is 300-400kHz.

[0009] Furthermore, a silicon wafer is selected to form a beam frame; the silicon wafer is subjected to thermal oxidation to form a first silicon dioxide layer, and a metal Ti film is sputtered on the surface of the first silicon dioxide layer, and a titanium oxide layer is formed on the first silicon dioxide layer after rapid thermal annealing. The titanium oxide layer serves as a thin film adhesion layer and forms an insulating layer with the first silicon dioxide layer, and then a film forming process is performed, and then a first Pt layer is sputtered to grow on the titanium oxide layer, and a lanthanum nickelate layer is deposited on the first Pt layer, and a lead zirconate titanate piezoelectric ceramic layer is plated on the lanthanum nickelate layer, and a second Pt layer is sputtered on the lead zirconate titanate piezoelectric ceramic layer through a PZT sputtering film forming process, and a second silicon dioxide layer is deposited on the second Pt layer to form a detection component; a first electrode lead portion, a vibration portion and a second electrode lead portion are prepared on the detection component.

[0010] Furthermore, the first electrode lead portion and the second electrode lead portion are exposed and etched to expose the first Pt layer and the second Pt layer respectively; the first lead disk is welded to the first Pt layer exposed in the first electrode lead portion, and the second lead disk is welded to the second Pt layer exposed in the second electrode lead portion.

[0011] Furthermore, a pattern is etched at the exposed glue coating on the bottom of the beam frame, and the pattern is etched to the first silicon dioxide layer through the Deep-Rie process; and the lead zirconate titanate piezoelectric ceramic layer is etched through ICP to release the vibration part.

[0012] On the other hand, the present invention provides a preparation method using a micro-particle MEMS sensor as described above, which includes: selecting a silicon wafer to form a beam frame; performing thermal oxidation on the silicon wafer to generate a first silicon dioxide layer, and sputtering a metal Ti film on the surface of the first silicon dioxide layer, forming a titanium oxide layer on the first silicon dioxide layer after rapid thermal annealing, and performing a film forming process after the titanium oxide layer serves as a thin film adhesion layer and forms an insulating layer with the first silicon dioxide layer, and then sputtering a first Pt layer on the titanium oxide layer, and depositing a lanthanum nickelate layer on the first Pt layer, and plating a lead zirconate titanate piezoelectric ceramic layer on the lanthanum nickelate layer, sputtering a second Pt layer on the lead zirconate titanate piezoelectric ceramic layer through a PZT sputtering film forming process, and depositing a second silicon dioxide layer on the second Pt layer to form a detection component; preparing a first electrode lead portion, a vibration portion, and a second electrode lead portion on the detection component.

[0013] Furthermore, a detection hole is formed in the center of the beam, and the detection component is arranged on the beam in an S shape; the first electrode lead portion and the second electrode lead portion are fixed on the beam, and the vibration portion is suspended above the detection hole; the first electrode lead portion and the second electrode lead portion obtain the concentration of particles in the reaction environment by detecting the voltage change of the vibration portion; and the first electrode lead portion and the second electrode lead portion apply a corresponding square wave alternating voltage signal to the vibration portion to remove particles accumulated on the surface of the vibration portion.

[0014] Furthermore, the adhesion force between the particles and the surface of the vibrating part is: Where R is the characteristic radius of the particle, M is the mass of the particle; the separation force of the particle from the vibrating surface is: F det =a surface *M; where a surface is the acceleration caused by the surface vibration of the vibrating part; when F det >F ad , that is, a surface >10 6 g to remove particles accumulated on the surface of the vibration part.

[0015] Furthermore, the first electrode lead portion and the second electrode lead portion apply corresponding square wave alternating voltage signals to the vibration portion, and the driving voltage Vpp=20V, and the frequency is 300-400kHz.

[0016] The beneficial effect of the present invention is that the present invention can solve the problem of the sensitive element becoming dysfunctional when the number of particles adsorbed by the sensitive element reaches saturation when the particle concentration in the environment is detected by the surface adsorption principle of the sensitive element, and the corresponding square wave alternating voltage signal is applied to the vibration part through the first electrode lead part and the second electrode lead part, so that the particles are separated from the surface of the detection component, thereby achieving self-cleaning.

[0017] Other features and advantages of the present invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the present invention.

[0018] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the specific embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0020] Figure 1This is a structural diagram of a micro-particle MEMS sensor based on PZT piezoelectric material of the present invention;

[0021] Figure 2 This is a first state diagram of the micro-particle MEMS sensor of the present invention during preparation;

[0022] Figure 3 is a second state diagram of the micro-particle MEMS sensor of the present invention during preparation;

[0023] Figure 4 This is a diagram of the third state of the micro-particle MEMS sensor of the present invention during preparation;

[0024] Figure 5 is a fourth state diagram of the micro-particle MEMS sensor of the present invention during preparation;

[0025] Figure 6 This is a fifth state diagram of the micro-particle MEMS sensor of the present invention during preparation.

[0026] In the picture:

[0027] 1. beam frame; 101. silicon layer;

[0028] 2. Detection component; 21. First electrode lead portion; 22. Second electrode lead portion; 23. Vibration portion; 201. First silicon dioxide layer; 202. Titanium oxide layer; 203. First Pt layer; 204. Lanthanum nickelate layer; 205. Lead zirconate titanate piezoelectric ceramic layer; 206. Second Pt layer; 207. Second silicon dioxide layer; 208. First lead disk; 209. Second lead disk. DETAILED DESCRIPTION

[0029] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of them. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0030] Example 1

[0031] In this embodiment, if Figures 1 to 6As shown, this embodiment provides a micro-particle MEMS sensor based on PZT piezoelectric material, which includes: a beam 1 and a detection component 2; wherein a detection hole is opened in the center of the beam 1, and the detection component 2 is arranged on the beam 1, and the detection component 2 is arranged in an S shape; the detection component 2 is divided into a first electrode lead portion 21, a vibration portion 23 and a second electrode lead portion 22, the first electrode lead portion 21 and the second electrode lead portion 22 are fixed on the beam 1, and the vibration portion 23 is suspended above the detection hole; the first electrode lead portion 21 and the second electrode lead portion 22 obtain the concentration of particles in the reaction environment by detecting the voltage change of the vibration portion 23; and the first electrode lead portion 21 and the second electrode lead portion 22 apply a corresponding square wave alternating voltage signal to the vibration portion 23 to remove the particles accumulated on the surface of the vibration portion 23.

[0032] In this embodiment, this embodiment can solve the problem that when the number of particles adsorbed by the sensitive element reaches saturation when the particle concentration in the environment is detected by the surface adsorption principle of the sensitive element, the sensitive element becomes disabled. The corresponding square wave alternating voltage signal is applied to the vibration part 23 through the first electrode lead part 21 and the second electrode lead part 22, so that the particles are separated from the surface of the detection component 2 to achieve self-cleaning.

[0033] In this embodiment, the adhesion force between the particles and the surface of the vibration part 23 is:

[0034] Where R is the characteristic radius of the particle, M is the mass of the particle; the separation force of the particle from the surface of the vibration part 23 is: F det =a surface *M; where a surface is the acceleration generated by the surface vibration of the vibration part 23; when F det >F ad , that is, a surface >10 6 At g, particles accumulated on the surface of the vibration part 23 are removed.

[0035] In this embodiment, the first electrode lead portion 21 and the second electrode lead portion 22 apply corresponding square wave alternating voltage signals to the vibration portion 23 , and the driving voltage Vpp=20V, and the frequency is 300-400 kHz.

[0036] In this embodiment, the dust particles attached to the surface of the vibration part 23 receive the acceleration generated by the surface vibration and obtain the separation force to separate from the surface. The acceleration generated by the surface vibration of the vibration part 23 is proportional to the weight M of the dust particles. Therefore, the heavier the particle, the greater the separation force released. To achieve the self-cleaning function of the vibration part 23, it is only necessary to satisfy the relationship F det >F ad , that is, a surface >10 6g, that is, the relationship in the formula is satisfied. Regardless of the value of the particle mass M, dust particles can be removed from the surface. The W of the vibration part 23 is 200μm, H is 300μm, and L is 800μm. A square wave alternating voltage signal is applied through the first electrode lead part 21 and the second electrode lead part 22. The driving voltage Vpp = 20V and the frequency are 300-400kHz. The vibration part 23 is driven to move. The maximum displacement of the first electrode lead part 21 and the second electrode lead part 22 at the resonant frequency is 14nm. The test uses dust with a diameter of 1-10μm. Under the above conditions, the vibration part 23 moves for 1.4 seconds to remove surface accumulated particles, realizing the "self-cleaning" function.

[0037] In this embodiment, a silicon wafer is selected to form the beam 1; the silicon wafer (silicon layer 101) is subjected to thermal oxidation to form a first silicon dioxide layer 201, and a metal Ti film is sputtered on the surface of the first silicon dioxide layer 201. After rapid thermal annealing, a titanium oxide layer 202 is formed on the first silicon dioxide layer 201. The titanium oxide layer 202 serves as a thin film adhesion layer and forms an insulating layer with the first silicon dioxide layer 201. After that, a film forming process is performed, and then a first Pt is sputtered on the titanium oxide layer 202. A layer 203 is formed, and a lanthanum nickelate layer 204 is deposited on the first Pt layer 203, and a lead zirconate titanate piezoelectric ceramic layer 205 is plated on the lanthanum nickelate layer 204, a second Pt layer 206 is sputtered on the plated lead zirconate titanate piezoelectric ceramic layer 205 through a PZT sputtering film forming process, and a second silicon dioxide layer 207 is deposited on the second Pt layer 206 to form a detection component 2; a first electrode lead portion 21, a vibration portion 23 and a second electrode lead portion 22 are prepared on the detection component 2.

[0038] In this embodiment, the first electrode lead portion 21 and the second electrode lead portion 22 are respectively exposed and etched to expose the first Pt layer 203 and the second Pt layer 206; the first lead disk 208 is welded to the first Pt layer 203 exposed in the first electrode lead portion 21, and the second lead disk 209 is welded to the second Pt layer 206 exposed in the second electrode lead portion 22.

[0039] In this embodiment, a pattern is etched at the exposed portion of the glue coating at the bottom of the beam 1 and the pattern is etched to the first silicon dioxide layer 201 by a Deep-Rie process; and the lead zirconate titanate piezoelectric ceramic layer 205 is etched by ICP to release the vibration part 23 .

[0040] In this embodiment, since the size and weight of particles in the air environment are very small, it is difficult to detect them through static measurement. The principle that the sensitive element of the detection component 2 is small and the change in the mass of the vibration part 23 caused by the change in the number of particles attached to the vibration part 23 will change the initial state of the vibration part 23 is used. Since the particle sensor device using the adsorption principle has the application limitation of particle adsorption saturation sensing failure in application, this embodiment designs the resonant structure of the sensor device so that the proposed sensor has a "self-cleaning" function, which can actively remove the particle dust accumulated on the surface of the vibration part 23 and maintain the performance reliability of the device. Since the mass of the detected particles is small, in order to improve the sensitivity of the sensor, the working resonant frequency of the device uses a higher frequency to ensure the sensitivity of the device and obtain a higher resolution. Due to the piezoelectric effect, the lead zirconate titanate piezoelectric ceramic layer 205 is driven to high-frequency resonance (greater than 400kHz) to provide a feedback electrical signal. The operating resonant frequency is 455.1kHz, and the sensitivity at the resonance point is 614.2nm / V. The vibrating portion 23 has a "self-cleaning" function, utilizing the positive piezoelectric effect of the lead zirconate titanate piezoelectric ceramic layer 205. Applying an AC voltage to the structure made of the lead zirconate titanate piezoelectric ceramic layer 205 causes harmonic vibrations equal to the AC signal frequency. At this time, the harmonic vibration frequency and displacement can be used to define the acceleration of the surface. If this value is large enough (greater than 106g), fine dust particles can be separated from the surface.

[0041] Example 2

[0042] Based on Example 1, this embodiment provides a method for preparing a micro-particle MEMS sensor provided in Example 1, which includes: selecting a silicon wafer to form a beam 1; performing thermal oxidation on the silicon wafer to form a first silicon dioxide layer 201, and sputtering a metal Ti film on the surface of the first silicon dioxide layer 201; forming a titanium oxide layer 202 on the first silicon dioxide layer 201 after rapid thermal annealing; the titanium oxide layer 202 serves as a thin film adhesion layer and forms an insulating layer with the first silicon dioxide layer 201, and then performing a film forming process; A first Pt layer 203 is sputtered on the titanium oxide layer 202, and a lanthanum nickelate layer 204 is deposited on the first Pt layer 203, and a lead zirconate titanate piezoelectric ceramic layer 205 is plated on the lanthanum nickelate layer 204. A second Pt layer 206 is sputtered on the plated lead zirconate titanate piezoelectric ceramic layer 205 through a PZT sputtering film forming process, and a second silicon dioxide layer 207 is deposited on the second Pt layer 206 to form a detection component 2; a first electrode lead portion 21, a vibration portion 23 and a second electrode lead portion 22 are prepared on the detection component 2.

[0043] In this embodiment, the silicon wafer is first subjected to thermal oxidation to form a first silicon dioxide layer 201 (80-500 nm thick), and a metal Ti film (15-30 nm thick) is sputtered on the surface. After rapid thermal annealing (RTA), a titanium oxide layer 202 is formed on the surface of the first silicon dioxide layer 201. The titanium oxide layer 202 serves as a thin film adhesion layer in the next step and forms an insulating layer with the first silicon dioxide layer 201. After the film forming process, a first Pt layer 203 (100- 500nm) as the lower electrode of the lead zirconate titanate piezoelectric ceramic layer 205, then deposit a lanthanum nickelate layer 204 (thickness 80-200nm) as a buffer layer of the lead zirconate titanate piezoelectric ceramic layer 205, then perform a PZT sputtering film forming process to form the lead zirconate titanate piezoelectric ceramic layer 205 (thickness 1-5um), then sputter a second Pt layer 206 (thickness 100-500nm) to prepare the upper electrode, and deposit a second silicon dioxide layer 207 as an insulating protective layer, such as Figure 2 As shown; coating, photolithography, exposure and etching to expose the first Pt layer 203, the second Pt layer 206, and complete the preparation of the vibration portion 23, after completion as shown Figure 3 As shown; using lift-Off to make the first lead plate 208, the second lead plate 209, the first lead plate 208, the second lead plate 209 uses an Au layer (thickness 300 ~ 500nm), as Figure 4 Etching pattern at the bottom of the silicon wafer at the exposed position, etching Si base using Deep-Rie process, etching stops at the first silicon dioxide layer 201, as shown Figure 5 As shown; using ICP etching lead zirconate titanate piezoelectric ceramic layer 205, and releasing the vibration portion 23, to complete the device preparation, as shown Figure 6 shown.

[0044] In this embodiment, a detection hole is formed in the center of the beam 1, and the detection component 2 is arranged on the beam 1 in an S-shape; the first electrode lead portion 21 and the second electrode lead portion 22 are fixed on the beam 1, and the vibration portion 23 is suspended above the detection hole; the first electrode lead portion 21 and the second electrode lead portion 22 obtain the concentration of particles in the reaction environment by detecting the voltage change of the vibration portion 23; and the first electrode lead portion 21 and the second electrode lead portion 22 apply a corresponding square wave alternating voltage signal to the vibration portion 23 to remove particles accumulated on the surface of the vibration portion 23.

[0045] In this embodiment, the adhesion force between the particles and the surface of the vibration part 23 is:

[0046] Where R is the characteristic radius of the particle, M is the mass of the particle; the separation force of the particle from the surface of the vibration part 23 is: F det =a surface *M; where a surfaceis the acceleration generated by the surface vibration of the vibration part 23; when F det >F ad , that is, a surface >10 6 At g, particles accumulated on the surface of the vibration part 23 are removed.

[0047] In this embodiment, the first electrode lead portion 21 and the second electrode lead portion 22 apply corresponding square wave alternating voltage signals to the vibration portion 23 , and the driving voltage Vpp=20V, and the frequency is 300-400 kHz.

[0048] To sum up, the present invention can solve the problem of the sensitive element becoming dysfunctional when the number of particles adsorbed by the sensitive element reaches saturation when the particle concentration in the environment is detected by the surface adsorption principle of the sensitive element. The corresponding square wave alternating voltage signal is applied to the vibration part through the first electrode lead part and the second electrode lead part, so that the particles are separated from the surface of the detection component, thereby achieving self-cleaning.

[0049] The various devices selected in this application (components whose specific structures are not described) are all universal standard parts or components known to those skilled in the art, and their structures and principles can be known to those skilled in the art through technical manuals or conventional experimental methods.

[0050] In the description of the embodiments of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0051] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate and simplify the description of the present invention. They are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation, and therefore should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0052] In the several embodiments provided in this application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the units is merely a logical function division. There may be other division methods in actual implementation. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed may be through some communication interface, indirect coupling or communication connection of devices or units, which may be electrical, mechanical or other forms.

[0053] The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of these units may be selected to achieve the purpose of this embodiment according to actual needs.

[0054] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0055] With the above-described preferred embodiments of the present invention as a guide, and with reference to the above description, relevant personnel are fully capable of making various changes and modifications without departing from the technical scope of this invention. The technical scope of this invention is not limited to the contents of the specification and must be determined according to the scope of the claims.

Claims

1. A micro-particle MEMS sensor based on PZT piezoelectric material, characterized in that: include: beams and inspection components; in A detection hole is opened in the center of the beam frame, and the detection component is arranged on the beam frame, and the detection component is arranged in an S shape; The detection component is divided into a first electrode lead portion, a vibration portion and a second electrode lead portion, the first electrode lead portion and the second electrode lead portion are fixed on the beam, and the vibration portion is suspended above the detection hole; The first electrode lead portion and the second electrode lead portion detect voltage changes of the vibration portion to obtain the concentration of particles in the reaction environment; and The first electrode lead portion and the second electrode lead portion apply corresponding square wave alternating voltage signals to the vibration portion to remove particles accumulated on the surface of the vibration portion.

2. The micro-particle MEMS sensor based on PZT piezoelectric material according to claim 1, characterized in that: The adhesion force between the particles and the vibrating surface is: F ad =10 6 g*M; in M is the mass of the particle; The separation force of particles from the vibrating surface is: F det =a surface *M; where a surface It is the acceleration caused by the surface vibration of the vibrating part; When F det >F ad , that is, a surface >10 6 g to remove particles accumulated on the surface of the vibration part.

3. The micro-particle MEMS sensor based on PZT piezoelectric material according to claim 2, characterized in that: The first electrode lead portion and the second electrode lead portion apply corresponding square wave alternating voltage signals to the vibration portion, and the driving voltage Vpp=20V, and the frequency is 300-400kHz.

4. The micro-particle MEMS sensor based on PZT piezoelectric material according to claim 1, characterized in that: Selecting silicon wafers to form a beam frame; The silicon wafer is subjected to thermal oxidation to form a first silicon dioxide layer, and a metal Ti film is sputtered on the surface of the first silicon dioxide layer. After rapid thermal annealing, a titanium oxide layer is formed on the first silicon dioxide layer. The titanium oxide layer serves as a thin film adhesion layer and forms an insulating layer with the first silicon dioxide layer, and then a film forming process is performed. Subsequently, a first Pt layer is sputtered on the titanium oxide layer, and a lanthanum nickelate layer is deposited on the first Pt layer. A lead zirconate titanate piezoelectric ceramic layer is plated on the lanthanum nickelate layer. A second Pt layer is sputtered on the lead zirconate titanate piezoelectric ceramic layer through a PZT sputtering film forming process, and a second silicon dioxide layer is deposited on the second Pt layer to form a detection component. A first electrode lead portion, a vibration portion, and a second electrode lead portion are prepared on the detection component.

5. The micro-particle MEMS sensor based on PZT piezoelectric material according to claim 4, characterized in that: The first electrode lead portion and the second electrode lead portion are exposed and etched to expose the first Pt layer and the second Pt layer respectively; A first lead pad is welded to the first Pt layer exposed on the first electrode lead portion, and a second lead pad is welded to the second Pt layer exposed on the second electrode lead portion.

6. The micro-particle MEMS sensor based on PZT piezoelectric material according to claim 5, characterized in that: Etch the pattern at the exposed area of the glue coating on the bottom of the beam frame and etch it to the first silicon dioxide layer through the Deep-Rie process; The lead zirconate titanate piezoelectric ceramic layer is etched by ICP to release the vibration part.

7. A method for preparing a microparticle MEMS sensor according to any one of claims 1 to 6, characterized in that: include: Selecting silicon wafers to form beams; The silicon wafer is subjected to thermal oxidation to form a first silicon dioxide layer, and a metal Ti film is sputtered on the surface of the first silicon dioxide layer. After rapid thermal annealing, a titanium oxide layer is formed on the first silicon dioxide layer. The titanium oxide layer serves as a thin film adhesion layer and forms an insulating layer with the first silicon dioxide layer, and then a film forming process is performed. Subsequently, a first Pt layer is sputtered on the titanium oxide layer, and a lanthanum nickelate layer is deposited on the first Pt layer. A lead zirconate titanate piezoelectric ceramic layer is plated on the lanthanum nickelate layer. A second Pt layer is sputtered on the lead zirconate titanate piezoelectric ceramic layer through a PZT sputtering film forming process, and a second silicon dioxide layer is deposited on the second Pt layer to form a detection component. A first electrode lead portion, a vibration portion, and a second electrode lead portion are prepared on the detection component.

8. The method for preparing a microparticle MEMS sensor according to claim 7, wherein: A detection hole is formed in the center of the beam frame, and the detection component is arranged on the beam frame in an S-shape; The first electrode lead portion and the second electrode lead portion are fixed on the beam frame, and the vibrating portion is suspended above the detection hole; The first electrode lead portion and the second electrode lead portion detect a voltage change of the vibration portion to obtain the concentration of particles in the reaction environment; and The first electrode lead portion and the second electrode lead portion apply corresponding square wave alternating voltage signals to the vibration portion to remove particles accumulated on the surface of the vibration portion.

9. The method for preparing a microparticle MEMS sensor according to claim 8, wherein: The adhesion force between the particles and the vibrating surface is: F ad =10 6 g*M; in M is the mass of the particle; The separation force of particles from the vibrating surface is: F det =a surface *M; where a surface It is the acceleration caused by the surface vibration of the vibrating part; When F det >F ad , that is, a surface >10 6 g to remove particles accumulated on the surface of the vibration part.

10. The method for preparing a micro-particle MEMS sensor according to claim 9, wherein: The first electrode lead portion and the second electrode lead portion apply corresponding square wave alternating voltage signals to the vibration portion, and the driving voltage Vpp=20V, and the frequency is 300-400kHz.

Images