Power semiconductor device and power conversion device

Abstract

The power semiconductor device (1) comprises a power module unit (200), an adhesive sheet (6), a supporting member (7) and an anti-flow frame (8). The adhesive sheet (6) is bonded to the power module unit (200). The supporting member (7) is connected to the power module unit (200) via the adhesive sheet (6). The anti-flow frame (8) is sandwiched between the power module unit (200) and the supporting member (7) and is arranged around the adhesive sheet (6). The adhesive sheet (6) has an outer peripheral surface (6c) connected to the inner peripheral surface (18) of the anti-flow frame (8). The value obtained by dividing the maximum value of the internal pressure on the outer peripheral surface (6c) by the minimum value of the internal pressure is less than 10.

Description

Technical Field

[0001] The present disclosure relates to a power semiconductor device and a power conversion device. Background Art

[0002] In the past, screws were mostly used to fix the power module and the supporting member. In particular, when heat dissipation is required, a method of using heat dissipation grease on the joint surface and fixing with screws is adopted. However, according to this method, since the screw fixing part is large, there is a technical problem of large-scale. There is also a technical problem of deterioration of thermal resistance or reduction of insulation due to the deterioration of grease.

[0003] In recent years, a method of using an adhesive sheet with high adhesiveness to join the support member and the power module has been adopted. In particular, when the support member is a heat dissipation member, a heat dissipation adhesive sheet with high thermal conductivity is selected as the adhesive sheet. In the case where the power module and the support member are not at the same potential, the adhesive sheet is required to have insulation properties. Therefore, sometimes a multifunctional material with heat dissipation, insulation and adhesion is selected as the adhesive sheet. Based on this, the installation area of ​​the power semiconductor device is reduced and the cost is reduced.

[0004] As an adhesive sheet having the above-mentioned characteristics, for example, a thermally conductive resin composition composed of an inorganic substance and a thermosetting resin is used. When the power module is joined to the supporting member, a method is used in which pressure is applied to the adhesive sheet when the uncured adhesive sheet is heated to cure it. The inorganic substance does not affect the adhesiveness, and the thermosetting resin ensures the adhesiveness. In many cases, there are voids in the thermosetting resin.

[0005] In order to evenly bond the power module and the supporting member, the adhesive sheet must first be heated and pressurized at a time when the viscosity of the thermosetting resin decreases. The pressure should be appropriately set considering the deformation of the power module caused by the pressurization, the deformation of the supporting member, and the unevenness of the joined surfaces. If the pressure is too low, a gap will form between the power module or the supporting member and the adhesive sheet. In addition, sometimes the voids that originally existed inside the adhesive sheet will remain and cause internal cracks. As a result, the reliability of the bonding may be reduced.

[0006] In addition, when the adhesive sheet is a multifunctional material with insulation and heat dissipation, the influence of the voids in the adhesive sheet is more obvious. Regarding insulation, the partial discharge caused by the voids in the adhesive sheet causes a decrease in insulation reliability. The relationship between void size and partial discharge is based on Paschen's law. The larger the void, the lower the insulation reliability. Similarly, regarding heat dissipation, the thermal conductivity of the part with voids may become lower.

[0007] Typically, the power module is bonded to the upper surface of the adhesive sheet, and the support member is bonded to the lower surface of the adhesive sheet. The side of the adhesive sheet is not bonded to the power module and the support member. When the adhesive sheet is bonded to the power module and the support member, the power module, the support member and the adhesive sheet are pressurized in the upper and lower directions of the adhesive sheet. Since the side of the adhesive sheet is open, almost no internal pressure is generated inside the adhesive sheet. In response to this problem, Japanese Patent Gazette No. 2012-174965 (Patent Document 1) discloses a sheet volume increase and decrease absorption portion provided at the peripheral portion of the adhesive sheet.

[0008] Prior art literature

[0009] Patent Literature

[0010] Patent Document 1: Japanese Patent Application Publication No. 2012-174965 Summary of the invention

[0011] Technical issues to be solved by the invention

[0012] As shown in Patent Document 1, it is generally believed that by providing a frame that regulates the volume increase or decrease of the adhesive sheet, the adhesiveness, heat dissipation and insulation properties can be improved. However, in the case of Patent Document 1, the flow rate of the thermosetting resin in the adhesive sheet varies due to the difference in distance from the pressurized center acting on the adhesive sheet to the inner peripheral surface of the sheet volume increase or decrease absorption portion. Therefore, the internal pressure of the outer peripheral surface of the adhesive sheet varies.

[0013] Specifically, when the adhesive sheet is joined to the power module and the supporting member, the adhesive sheet flows in the in-plane direction. The adhesive sheet includes, for example, ceramics, thermosetting resins and voids. Ceramics, thermosetting resins and voids are regarded as liquids, the thickness direction of the adhesive sheet is regarded as the flow path cross-sectional area, and the distance from the center of the adhesive sheet is regarded as the flow path length. When the viewpoint of fluid mechanics is applied, when the adhesive sheet is rectangular, the distance between the corner of the adhesive sheet and the center of the adhesive sheet is the farthest. At the corner of the adhesive sheet, since the flow path length becomes longer, the fluid resistance becomes larger. As a result, at the corner of the adhesive sheet, since the amount of liquid in the adhesive sheet is the least, the internal pressure is the lowest. When the internal pressure of the adhesive sheet is low, since the number and size of the voids remaining in the adhesive sheet become larger, the adhesion, heat dissipation and insulation properties are each reduced. Therefore, the reliability of the semiconductor device for power is reduced.

[0014] The present disclosure has been made in view of the above-mentioned problems, and an object of the present disclosure is to provide a power semiconductor device capable of improving reliability.

[0015] Technical solutions for solving technical problems

[0016] The power semiconductor device disclosed in the present invention comprises a power module part, an adhesive sheet, a support member and an anti-flow frame. The adhesive sheet is bonded to the power module part. The support member is connected to the power module part via the adhesive sheet. The anti-flow frame is sandwiched between the power module part and the support member and is arranged around the adhesive sheet. The adhesive sheet has an outer peripheral surface connected to the inner peripheral surface of the anti-flow frame. The value obtained by dividing the maximum value of the internal pressure on the outer peripheral surface by the minimum value of the internal pressure is less than 10.

[0017] Effects of the Invention

[0018] According to the power semiconductor device disclosed in the present invention, the number and size of voids remaining in the adhesive sheet can be reduced, thereby improving the adhesiveness, heat dissipation and insulation of the adhesive sheet. As a result, the reliability of the power semiconductor device can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a perspective schematic diagram showing the structure of the power semiconductor device according to the first embodiment.

[0020] Figure 2 For along Figure 1 Schematic diagram of the cross section of line II-II.

[0021] Figure 3 For along Figure 2 Schematic diagram of the cross section of line III-III.

[0022] Figure 4 Schematic cross-sectional view showing the manufacturing process of the power semiconductor device according to the first embodiment.

[0023] Figure 5 It is a schematic cross-sectional view showing the structure of a power semiconductor device according to a second embodiment.

[0024] Figure 6 It is a schematic perspective view showing the structure of a power semiconductor device according to a third embodiment.

[0025] Figure 7 1 is a perspective schematic diagram showing the structure of a power module of a power semiconductor device according to a third embodiment.

[0026] Figure 8 For along Figure 6 Schematic diagram of the cross section along line VIII-VIII.

[0027] Fig. 9 For along Figure 8 Schematic diagram of the cross section of line IX-IX.

[0028] Fig.10 It is a perspective schematic diagram showing the structure of a power semiconductor device according to a fourth embodiment.

[0029] Fig.11 It is a perspective schematic diagram showing the structure of a supporting member of a power semiconductor device according to a fourth embodiment.

[0030] Fig.12 For along Fig.10 Schematic diagram of the cross section along line XII-XII.

[0031] Fig.13 For along Fig.12 Schematic diagram of the cross section along line XIII-XIII.

[0032] Fig.14 1 is a schematic cross-sectional view showing the structure of a power semiconductor device according to a fifth embodiment.

[0033] Fig.15 It is a schematic cross-sectional view showing the structure of a power semiconductor device according to a sixth embodiment.

[0034] Fig.16 It is a schematic cross-sectional view showing the structure of a power semiconductor device according to a seventh embodiment.

[0035] Fig.17 It is a schematic cross-sectional view showing the structure of a power semiconductor device according to an eighth embodiment.

[0036] Fig.18 For along Fig.17 Schematic diagram of the cross section of line XVIII-XVIII.

[0037] Fig.19 It is a schematic cross-sectional view showing the structure of a power semiconductor device according to a ninth embodiment.

[0038] Fig. 20 For along Fig.19 Schematic diagram of the cross section of line XX-XX.

[0039] Fig.21 This is a block diagram showing the configuration of a power conversion system to which the power conversion device according to the tenth embodiment is applied.

[0040] Reference numerals

[0041] 1: semiconductor element for power use; 2a: first metal wiring member; 2b: second metal wiring member; 2c: third metal wiring member; 3: heat spreader; 4a: first metal bonding member; 4b: second metal bonding member; 5: molded resin portion; 6: adhesive sheet; 6a: central portion; 6b: peripheral portion; 6c: peripheral surface; 7: supporting member; 7a: main body; 7b: heat sink (fin); 8: anti-flow frame; 8a: first area; 8b: second area; 8c: third area; 8d: fourth area; 8e: fifth area; 8f: sixth area; 8g: seventh area; 9: bonding surface; 9a: first center; 9b: first corner; 11: groove; 11a: side surface; 11b: bottom surface; 12: recessed portion; 13a: first layer; 13b: second layer; 13c: third layer; 15: top surface; 15a: second center; 15b: second corner; 16: upper surface; 18: inner peripheral surface; 18a: corner; 18b: side; 28: outer wall surface; 38: first surface; 48: second surface; 61: gap; 100: semiconductor device for power; 150: power supply; 200: power module unit; 250: power conversion device; 251: main conversion circuit; 252: semiconductor module; 253: control circuit; 300: load. DETAILED DESCRIPTION

[0042] The following describes the details of the embodiments of the present disclosure. In the following description, the same reference numerals are attached to the same or corresponding elements, and the same description thereof will not be repeated.

[0043] Implementation method 1.

[0044] Figure 1 It is a perspective schematic diagram showing the structure of the power semiconductor device according to the first embodiment. Figure 2 For along Figure 1 Schematic diagram of the cross section of line II-II.

[0045] like Figure 1 and Figure 2 As shown, the power semiconductor device 100 of the first embodiment mainly includes a power module unit 200, an adhesive sheet 6, a support member 7, and an anti-flow frame 8. The power module unit 200 mainly includes a power semiconductor element 1, a first metal wiring member 2a, a second metal wiring member 2b, a third metal wiring member 2c, a heat sink 3, a first metal bonding member 4a, a second metal bonding member 4b, and a molded resin unit 5. The power semiconductor element 1 is sealed by the molded resin unit 5. The power semiconductor element 1 is bonded to the heat sink 3 using the first metal bonding member 4a. The power semiconductor element 1 is bonded to the first metal wiring member 2a using the second metal bonding member 4b.

[0046] The first metal wiring member 2a and the second metal wiring member 2b are made of, for example, solder, silver, aluminum or other metals. The power semiconductor element 1 is joined to the second metal wiring member 2b using the third metal wiring member 2c. The third metal wiring member 2c is, for example, a wire of aluminum or copper. The power semiconductor element 1 is, for example, a voltage-driven MOSFET (Metal Oxide Semiconductor Field Effect Transistor), an IGBT (Insulated Gate Bipolar Transistor) or a diode. The power semiconductor element 1 is made of, for example, a semiconductor such as silicon, silicon nitride, gallium nitride or silicon carbide. The power semiconductor element 1 is the main heat source in the power module unit 200.

[0047] The first metal wiring member 2a and the second metal wiring member 2b are each formed in a state where a portion is exposed outside the molded resin portion 5. The first metal wiring member 2a and the second metal wiring member 2b are each a connection portion with the outside. The support member 7 is, for example, a heat sink that diffuses the heat generated when the power semiconductor element 1 is working to the outside. The support member 7 is, for example, made of a metal such as aluminum or copper. The support member 7 is connected to the power module portion 200 via an adhesive sheet 6. The support member 7 has, for example, a main body 7a and a plurality of heat sinks 7b. Since the support member 7 has a plurality of heat sinks 7b, the heat dissipation is improved. A cooling solution can be passed through the support member 7 to cool the support member 7. The support member 7 can be connected to peripheral components such as a radiator (not shown), for example. The cooling solution is, for example, water.

[0048] At least one surface of the power module unit 200 is bonded to the support member 7 via the adhesive sheet 6. For example, the power module unit 200 may be configured such that a portion of the heat sink 3 having no insulating function is exposed from the molded resin unit 5, and the exposed surface is bonded to the support member 7 by the adhesive sheet 6 having insulating, adhesive, and heat dissipating properties. The power module unit 200 may be configured such that an insulating substrate sandwiching ceramics is used as the heat sink 3, and a portion of the heat sink 3 is exposed from the molded resin unit 5, and the exposed surface is bonded to the support member 7 by the adhesive sheet 6 having adhesive and heat dissipating properties. The power module unit 200 may be configured such that any one surface is bonded by the adhesive sheet 6 having adhesive and heat dissipating properties while all surfaces are sealed with the molded resin.

[0049] The adhesive sheet 6 is bonded to the power module part 200. The adhesive sheet 6 is, for example, connected to the heat sink 3 and the molded resin part 5, respectively. The adhesive sheet 6 is, for example, a mixture of ceramic and thermosetting resin. The ceramic is, for example, boron nitride. The thermosetting resin is, for example, epoxy resin or polyimide resin. The adhesive sheet 6 can be formed by simply mixing ceramic particles in a thermosetting resin, or by impregnating a ceramic skeleton with a thermosetting resin. The ceramic functions as a heat dissipation path. The thermosetting resin ensures adhesion. The ceramic and the thermosetting resin have insulating properties.

[0050] The adhesive sheet 6 can be made of any material having heat dissipation, insulation and adhesiveness, and is not limited to the above materials. The adhesive sheet 6 as described above usually contains, for example, about 1 volume % or more and 14 volume % or less of voids. The voids may reduce the adhesiveness, insulation and heat dissipation of the adhesive sheet 6.

[0051] like Figure 2 As shown, the anti-flow frame 8 is sandwiched between the power module unit 200 and the support member 7. The anti-flow frame 8 is arranged around the adhesive sheet 6. Figure 3 For along Figure 2 Schematic diagram of the cross section of line III-III. Figure 3 As shown, the anti-flow frame 8 has an inner peripheral surface 18 and an outer wall surface 28. The outer wall surface 28 is located outside the inner peripheral surface 18. The outer wall surface 28 surrounds the inner peripheral surface 18. The adhesive sheet 6 has a central portion 6a, a peripheral portion 6b and an outer peripheral surface 6c. The peripheral portion 6b is located outside the central portion 6a. The peripheral portion 6b is connected to the central portion 6a. The peripheral portion 6b constitutes the outer peripheral surface 6c. The anti-flow frame 8 is composed of, for example, one layer. The anti-flow frame 8 is composed of, for example, a single material.

[0052] like Figure 3 As shown in FIG. 1 , when viewed in the thickness direction of the adhesive sheet 6, the peripheral portion 6b surrounds the central portion 6a. The peripheral portion 6b forms an outer peripheral surface 6c. The outer peripheral surface 6c is in contact with the inner peripheral surface 18 of the anti-flow frame 8. Figure 3 As shown, when observed along the thickness direction of the adhesive sheet 6, the inner peripheral surface 18 is, for example, a rectangle with arc-shaped corners. The inner peripheral surface 18 has an arc-shaped corner 18a and a side 18b. The side 18b is straight. The arc-shaped corner 18a is connected to the side 18b. The radius of curvature of the arc-shaped corner 18a is greater than 1 / 30 of the length of the long side of the rectangle. The radius of curvature of the arc-shaped corner 18a can be greater than 1 / 20 of the length of the long side of the rectangle, or can be greater than 1 / 10. As shown in FIG. Figure 3 As shown in FIG. 1 , when viewed along the thickness direction of the adhesive sheet 6, the outer peripheral surface 6c may be a rectangle with arc-shaped corners. Fig. 9 As shown, the outer peripheral surface 6c may be rectangular when viewed along the thickness direction of the adhesive sheet 6. When viewed along the thickness direction of the adhesive sheet 6, the corner 18a of the outer peripheral surface 6c may be right angled instead of arc-shaped.

[0053] Figure 4 Schematic cross-sectional view showing the manufacturing process of the power semiconductor device of Embodiment 1. Figure 4 As shown, the adhesive sheet 6 before the pressurized and heated bonding is arranged inside the inner peripheral surface 18 of the anti-flow frame 8 with a gap 61 provided between the adhesive sheet 6 and the inner peripheral surface 18. Next, the power module part 200 and the support member 7 are firmly bonded via the adhesive sheet 6. Specifically, the bonding is performed by pressurizing and heating at a pressure and temperature within a range that does not damage the power module part 200.

[0054] During the pressurized and heated bonding, the viscosity of the thermosetting resin contained in the adhesive sheet 6 temporarily decreases. The adhesive sheet 6 flows as the pressure is applied. The adhesive sheet 6 is Figure 2 The up-down direction) and the in-plane direction ( Figure 2 The adhesive sheet 6 is deformed in various directions (left and right directions). At this time, a part of the ceramic, thermosetting resin and voids contained in the adhesive sheet 6 flow. That is to say, before the pressurized and heated bonding, there is a gap 61 between the adhesive sheet 6 and the anti-flow frame 8 in the planar direction, but due to the pressurized and heated bonding, the adhesive sheet 6 flows and the gap 61 is filled with the peripheral portion 6b (flowing portion). After the pressurized and heated bonding, the contact area between the outer peripheral surface 6c of the adhesive sheet 6 and the inner peripheral surface 18 of the anti-flow frame 8 can be a part of the outer peripheral surface 6c of the adhesive sheet 6 or the entire periphery of the outer peripheral surface 6c.

[0055] When the in-plane direction of the adhesive sheet 6 is open (i.e., there is no Figure 2 In the case of the anti-flow frame 8 of the power semiconductor device 100 shown in FIG. 1 , the pressure at the center of the adhesive sheet 6 is the highest, and the pressure at the outer peripheral surface 6c is the lowest. The adhesive sheet 6 flows from the center of the adhesive sheet 6 to the outer peripheral side by utilizing the pressure difference between the center and the outer peripheral surface 6c. The adhesive sheet 6 is deformed and flows when subjected to a pressure of, for example, about 10 MPa.

[0056] A portion of the ceramic, the thermosetting resin, and the voids flow from the center of the adhesive sheet 6 toward the periphery with the applied force during bonding as the driving force and the fluid resistance in the adhesive sheet 6 as the reaction force. The corner of the outer peripheral surface 6c of the adhesive sheet 6 is the farthest from the center of the adhesive sheet 6. Therefore, the corner of the outer peripheral surface 6c of the adhesive sheet 6 has a higher fluid resistance than the portion other than the corner of the outer peripheral surface 6c. As a result, the flow rate at the corner of the outer peripheral surface 6c of the adhesive sheet 6 is less than the portion other than the corner of the outer peripheral surface 6c. Therefore, at the corner of the outer peripheral surface 6c of the adhesive sheet 6, the internal pressure generated in the adhesive sheet 6 becomes low, and the voids existing in the adhesive sheet 6 cannot be fully crushed. As a result, a large number of voids may remain inside the adhesive sheet 6, and the bonding reliability, heat dissipation, and insulation reliability may decrease.

[0057] According to the power semiconductor device 100 of the first embodiment, the internal pressure of the outer peripheral surface 6c of the adhesive sheet 6 is uniform. Specifically, the value obtained by dividing the maximum value of the internal pressure at the outer peripheral surface 6c of the adhesive sheet 6 by the minimum value of the internal pressure at the outer peripheral surface 6c of the adhesive sheet 6 is 10 or less. The value obtained by dividing the maximum value of the internal pressure at the outer peripheral surface 6c of the adhesive sheet 6 by the minimum value of the internal pressure at the outer peripheral surface 6c of the adhesive sheet 6 may be 5 or less, or may be 2 or less. In the case where the outer shape of the adhesive sheet 6 is a rectangle, it is easy for the internal pressure at the corner of the rectangle to be the minimum and the internal pressure at the center of the long side of the rectangle to be the maximum. The internal pressure at the center of the long side of the rectangle may be 10 times or less of the internal pressure at the corner of the rectangle.

[0058] Next, the calculation method of the internal pressure on the outer peripheral surface of the adhesive sheet is described. The internal pressure on the outer peripheral surface of the adhesive sheet is calculated by using the structural parameters of the anti-flow frame and the adhesive sheet. As a method for calculating the internal pressure on the outer peripheral surface of the adhesive sheet, for example, there is a method of applying the Ergun equation.

[0059] The material of the anti-flow frame 8 has a strength that can prevent the adhesive sheet 6 from deforming and flowing when subjected to a high pressure such as 10 MPa. Before the heat and pressure bonding, the height of the anti-flow frame 8 is preferably greater than the height of the adhesive sheet 6. The anti-flow frame 8 is deformed by the heat and pressure bonding. After the heat and pressure bonding, the thickness of the anti-flow frame 8 is preferably equal to or greater than the thickness of the adhesive sheet 6.

[0060] According to the power semiconductor device 100 of the first embodiment, the internal pressure of the outer peripheral surface 6c of the adhesive sheet 6 is uniformized. Therefore, the number and size of the voids remaining in the adhesive sheet 6 are reduced. The size (diameter) of the voids existing in the adhesive sheet 6 can be, for example, 20 μm or less. Accordingly, the adhesion, heat dissipation and insulation of the adhesive sheet 6 can be improved. As a result, the reliability of the power semiconductor device 100 can be improved. Therefore, the enlargement of the mounting area and the increase in cost due to the provision of an unnecessary design margin can be suppressed.

[0061] Implementation method 2.

[0062] Next, the structure of the power semiconductor device 100 of the second embodiment will be described. The same reference numerals as those of the power semiconductor device 100 of the first embodiment are given to the same structures as those of the power semiconductor device 100 of the first embodiment, and the description thereof will not be repeated. The following description will focus mainly on the structures that are different from those of the power semiconductor device 100 of the first embodiment.

[0063] Figure 5 1 is a schematic cross-sectional view showing the structure of a power semiconductor device 100 according to a second embodiment. Figure 5 The cross section and along Figure 2 The cross section of line III-III corresponds to Figure 5 As shown, when observed along the thickness direction of the adhesive sheet 6, the inner peripheral surface 18 of the anti-flow frame 8 is circular. Similarly, the outer peripheral surface 6c of the adhesive sheet 6 is circular. The anti-flow frame 8 is annular. When observed along the thickness direction of the adhesive sheet 6, the distance between the center of the adhesive sheet 6 and the inner peripheral surface 18 of the anti-flow frame 8 (or the outer peripheral surface 6c of the adhesive sheet 6) is the same at any point on the inner peripheral surface 18. Accordingly, the fluid resistance during pressurized heating bonding can be made constant. As a result, the flow amount of the adhesive sheet 6 can be made uniform in all in-plane directions observed from the center of the adhesive sheet 6. Accordingly, the internal pressure of the outer peripheral surface 6c of the adhesive sheet 6 can be made uniform.

[0064] Implementation method 3.

[0065] Next, the structure of the power semiconductor device 100 of the third embodiment will be described. The same reference numerals as those of the power semiconductor device 100 of the first embodiment are given to the same structures as those of the power semiconductor device 100 of the first embodiment, and the description thereof will not be repeated. The following description will focus mainly on the structures that are different from those of the power semiconductor device 100 of the first embodiment.

[0066] Figure 6 It is a perspective schematic diagram showing the structure of a power semiconductor device 100 according to a third embodiment. Figure 7 1 is a perspective schematic diagram showing the structure of a power module unit 200 of a power semiconductor device 100 according to a third embodiment.

[0067] like Figure 7 As shown, the power module part 200 has a bonding surface 9. The bonding surface 9 is a surface in contact with the adhesive sheet 6. The bonding surface 9 includes the heat sink 3 and the molded resin part 5. The bonding surface 9 has a curved shape. Regarding the thickness of the power module part 200, it is thinnest at the corner of the bonding surface 9 (the first corner 9b) and thickest at the center of the bonding surface 9 (the first center 9a). The bonding surface 9 can be a convex curved surface that continuously extends radially from the center (the first center 9a).

[0068] Figure 8 For along Figure 6 Schematic diagram of the cross section along line VIII-VIII. Figure 8 The cross section shown is a cross section parallel to the thickness direction of the adhesive sheet 6. Figure 8 As shown, in the cross-sectional view, the thickness of the adhesive sheet 6 may increase from the central portion 6a toward the peripheral surface 6c. In the cross-sectional view, the thickness of the outer wall surface 28 of the anti-flow frame 8 may be greater than the thickness of the inner peripheral surface 18 of the anti-flow frame 8. The thickness of the peripheral surface 6c of the adhesive sheet 6 may be greater than the maximum value of the thickness of the central portion 6a of the adhesive sheet 6.

[0069] The anti-flow frame 8 has a first surface 38 and a second surface 48. The second surface 48 is located on the opposite side of the first surface 38. The first surface 38 is in contact with the molded resin portion 5. The second surface 48 is in contact with the support member 7. The distance between the first surface 38 and the second surface 48 may increase from the inner peripheral surface 18 toward the outer wall surface 28. The first surface 38 may be a curved surface. The second surface 48 may be a flat surface.

[0070] Fig. 9 For along Figure 8 Schematic diagram of the cross section of line IX-IX. Fig. 9 As shown, when viewed along the thickness direction of the adhesive sheet 6, the inner peripheral surface 18 of the anti-flow frame 8 can be a square or a rectangle. Similarly, the outer shape of the adhesive sheet 6 can be a square or a rectangle. The outer wall surface 28 of the anti-flow frame 8 can be a square or a rectangle. The thickness of the adhesive sheet 6 at the corner of the outer peripheral surface 6c of the adhesive sheet 6 can be greater than the thickness of the adhesive sheet 6 at the center of one side of the outer peripheral surface 6c of the adhesive sheet 6.

[0071] According to the power semiconductor device 100 of the third embodiment, before the pressurized heat bonding, the gap between the adhesive sheet 6 and the power module unit 200 in the thickness direction is the widest at the corner of the outer peripheral surface 6c farthest from the center of the adhesive sheet 6. Generally, regarding the fluidity of the fluid, the wider the cross-sectional area of ​​the flow path, the easier it is to flow. Therefore, by increasing the gap in the thickness direction between the adhesive sheet 6 and the power module unit 200, it can be expected that the flow amount of the adhesive sheet 6 can be increased.

[0072] According to the power semiconductor device 100 of the third embodiment, the thickness of the power module part 200 is thinnest at the corner of the bonding surface 9 (the first corner 9b) and thickest at the center of the bonding surface 9 (the first center 9a). Therefore, the difference in the flow amount of the adhesive sheet 6 at the periphery of the adhesive sheet 6 can be reduced. Based on this, the effect of making the internal pressure of the adhesive sheet 6 uniform can be expected. As a result, the bonding reliability, heat dissipation and insulation reliability of the power semiconductor device 100 can be improved. Therefore, the enlargement of the mounting area and the increase in cost due to the provision of an extra design margin can be suppressed.

[0073] Implementation method 4.

[0074] Next, the structure of the power semiconductor device 100 of the fourth embodiment will be described. The same reference numerals as those of the power semiconductor device 100 of the first embodiment are given to the same structures as those of the power semiconductor device 100 of the first embodiment, and the description thereof will not be repeated. The following description will focus mainly on the structures that are different from those of the power semiconductor device 100 of the first embodiment.

[0075] Fig.10 It is a perspective schematic diagram showing the structure of a power semiconductor device 100 according to a fourth embodiment. Fig.11 1 is a schematic perspective view showing the structure of a supporting member of a power semiconductor device 100 according to a fourth embodiment.

[0076] like Fig.11 As shown, the support member 7 has a top surface 15. The top surface 15 is a surface opposite to the adhesive sheet 6. The top surface 15 includes a main body portion 7a. The top surface 15 has an upper surface 16, a side surface 11a and a bottom surface 11b. The upper surface 16 is connected to the side surface 11a. The side surface 11a is connected to the bottom surface 11b. The upper surface 16 is separated from the bottom surface 11b. A groove portion 11 is provided on the top surface 15. The groove portion 11 includes a side surface 11a and a bottom surface 11b. Regarding the depth of the groove portion 11, it is deepest at the corner of the bottom surface 11b (the second corner 15b) and shallowest at the center of the bottom surface (the second center 15a). The bottom surface 11b can be a convex curved surface that extends continuously and radially from the center (the second center 15a).

[0077] Fig.12 For along Fig.10 Schematic diagram of the cross section along line XII-XII. Fig.12 The cross section shown is a cross section parallel to the thickness direction of the adhesive sheet 6. Fig.12 As shown, the adhesive sheet 6 and the anti-flow frame 8 can be arranged inside the groove portion 11. The adhesive sheet 6 and the anti-flow frame 8 can be connected to the bottom surface 11b of the groove portion 11. The anti-flow frame 8 can be connected to the side surface 11a of the groove portion 11. Fig.12 As shown, in the cross-sectional view, the thickness of the adhesive sheet 6 may increase from the central portion 6a toward the peripheral surface 6c. In the cross-sectional view, the thickness of the outer wall surface 28 of the anti-flow frame 8 may be greater than the thickness of the inner peripheral surface 18 of the anti-flow frame 8. The thickness of the peripheral surface 6c of the adhesive sheet 6 may be greater than the maximum value of the thickness of the central portion 6a.

[0078] The anti-flow frame 8 has a first surface 38 and a second surface 48. The second surface 48 is located on the opposite side of the first surface 38. The first surface 38 is in contact with the molded resin portion 5. The second surface 48 is in contact with the support member 7. The distance between the first surface 38 and the second surface 48 may increase from the inner peripheral surface 18 toward the outer wall surface 28. The first surface 38 may be a flat surface. The second surface 48 may be a curved surface.

[0079] Fig.13 For along Fig.12 Schematic diagram of the cross section of line XIII-XIII. Fig.13 As shown, when viewed along the thickness direction of the adhesive sheet 6, the inner peripheral surface 18 of the anti-flow frame 8 can be a square or a rectangle. Similarly, the outer peripheral surface 6c of the adhesive sheet 6 can be a square or a rectangle. The outer wall surface 28 of the anti-flow frame 8 can be a square or a rectangle. The thickness of the adhesive sheet 6 at the corner of the outer peripheral surface 6c of the adhesive sheet 6 can be greater than the thickness of the adhesive sheet 6 at the center of one side of the outer peripheral surface 6c of the adhesive sheet 6.

[0080] According to the power semiconductor device 100 of the fourth embodiment, before the pressurized heat bonding, the gap between the adhesive sheet 6 and the power module unit 200 in the thickness direction is the widest at the corner of the outer peripheral surface 6c farthest from the center of the adhesive sheet 6. Generally, regarding the fluidity of the fluid, the wider the cross-sectional area of ​​the flow path, the easier it is to flow. Therefore, by increasing the gap between the adhesive sheet 6 and the power module unit 200 in the thickness direction, it can be expected that the flow amount of the adhesive sheet 6 can be increased.

[0081] According to the power semiconductor device 100 of the fourth embodiment, the depth of the groove 11 is the deepest at the corner of the bottom surface 11b (the second corner 15b) and the shallowest at the center of the bottom surface 11b (the second center 15a). Therefore, the difference in the flow amount of the adhesive sheet 6 at the periphery of the adhesive sheet 6 can be reduced. Based on this, the effect of making the internal pressure of the adhesive sheet 6 uniform can be expected. As a result, the bonding reliability, heat dissipation and insulation reliability of the power semiconductor device 100 can be improved. Therefore, the enlargement of the mounting area and the increase in cost due to the provision of an extra design margin can be suppressed.

[0082] Implementation method 5.

[0083] Next, the structure of the power semiconductor device 100 of the fifth embodiment will be described. The same reference numerals as those of the power semiconductor device 100 of the first embodiment are given to the same structures as those of the power semiconductor device 100 of the first embodiment, and the description thereof will not be repeated. The following description will focus mainly on the structures that are different from those of the power semiconductor device 100 of the first embodiment.

[0084] Fig.14 1 is a schematic cross-sectional view showing the structure of a power semiconductor device 100 according to a fifth embodiment. Fig.14 The cross section and along Figure 2 The cross section of line III-III corresponds to Fig.14 As shown in FIG. 1 , when viewed along the thickness direction of the adhesive sheet 6, the inner peripheral surface 18 has a corner 18a and a side 18b. The side 18b is connected to the corner 18a. The side 18b is bent in a manner that is convex toward the inside. Fig.14 As shown, the width of the anti-flow frame 8 decreases from the center of the side portion 18b toward the corner portion 18a when viewed in the thickness direction of the adhesive sheet 6. The outer wall surface 28 of the anti-flow frame 8 may be rectangular or square.

[0085] The anti-flow frame 8 is, for example, a solid material. Before the pressurized heat bonding, the thickness of the anti-flow frame 8 is greater than the thickness of the adhesive sheet 6. The anti-flow frame 8 is deformed during the pressurized heat bonding. After the heat and pressure bonding, the thickness of the anti-flow frame 8 is greater than the thickness of the adhesive sheet 6. Materials having the above-mentioned characteristics are, for example, soft metals such as tin or silicone-based rubber materials.

[0086] According to the power semiconductor device 100 of the fifth embodiment, the gap in the in-plane direction between the inner peripheral surface 18 of the anti-flow frame 8 and the outer peripheral surface 6c of the adhesive sheet 6 changes continuously in a manner that is widest at the corner. The outer peripheral surface 6c of the adhesive sheet 6 that flows during the pressurized heating bonding can no longer flow when it contacts the anti-flow frame 8. Therefore, the adhesive sheet 6 easily flows to the side with a wide gap, that is, the corner side of the adhesive sheet 6. Accordingly, the internal pressure of the outer peripheral surface 6c of the adhesive sheet 6 can be made equal.

[0087] Implementation method 6.

[0088] Next, the structure of the power semiconductor device 100 of the sixth embodiment will be described. The same reference numerals as those of the power semiconductor device 100 of the first embodiment are given to the same structures as those of the power semiconductor device 100 of the first embodiment, and the description thereof will not be repeated. The following description will focus mainly on the structures that are different from those of the power semiconductor device 100 of the first embodiment.

[0089] Fig.15 1 is a schematic cross-sectional view showing the structure of a power semiconductor device 100 according to a sixth embodiment. Fig.15 The cross section and along Figure 2 The cross section of the line III-III corresponds to that of the line III-III. In the power semiconductor device 100 of embodiment 6, the anti-flow frame 8 is composed of a porous body. Unlike embodiments 1 to 5, the flowing adhesive sheet 6 enters the interior of the anti-flow frame 8 during pressurized and heated bonding. When the adhesive sheet 6 passes through the interior of the anti-flow frame 8, fluid resistance is generated relative to the adhesive sheet 6. Therefore, the flow of the adhesive sheet 6 can be suppressed. As a result, the internal pressure of the adhesive sheet 6 can be made uniform. As a material for the anti-flow frame 8, a material is selected in which the adhesive sheet 6 exhibits the same deformation behavior as in embodiment 5. As a material for the anti-flow frame 8, for example, a porous body such as cellulose fiber, glass fiber, foamed resin, porous ceramics, etc.

[0090] like Fig.15 As shown, when observed in the thickness direction of the adhesive sheet 6, the inner peripheral surface 18 has a corner 18a and a side 18b. The side 18b is connected to the corner 18a. The side 18b is linear. The diameter of the hole of the porous body increases from the center of the side 18b to the corner 18a. Specifically, the diameter of the hole of the anti-flow frame 8 at the corner 18a is the largest, and the diameter of the hole of the anti-flow frame 8 at the center of the side 18b is the smallest.

[0091] like Fig.15As shown, the anti-flow frame 8 may have a first region 8a, a second region 8b, a third region 8c, a fourth region 8d, a fifth region 8e, a sixth region 8f and a seventh region 8g. The first region 8a constitutes the center of the edge. The seventh region 8g constitutes a corner. The second region 8b is located on both sides of the first region 8a. The third region 8c is located between the second region 8b and the fourth region 8d. The fourth region 8d is located between the third region 8c and the fifth region 8e. The fifth region 8e is located between the fourth region 8d and the sixth region 8f. The sixth region 8f is located between the fifth region 8e and the seventh region 8g. The seventh region 8g is the corner of the anti-flow frame 8.

[0092] The diameter of the hole in the second region 8b is larger than the diameter of the hole in the first region 8a. The diameter of the hole in the third region 8c is larger than the diameter of the hole in the second region 8b. The diameter of the hole in the fourth region 8d is larger than the diameter of the hole in the third region 8c. The diameter of the hole in the fifth region 8e is larger than the diameter of the hole in the fourth region 8d. The diameter of the hole in the sixth region 8f is larger than the diameter of the hole in the fifth region 8e. The diameter of the hole in the seventh region 8g is larger than the diameter of the hole in the sixth region 8f.

[0093] As another embodiment, when the diameters of the holes are the same, the density of the holes in the corners of the anti-flow frame 8 may be the highest, and the density of the holes in the center of the edge of the anti-flow frame 8 may be the lowest. Specifically, the density of the holes in the second region 8b may be higher than the density of the holes in the first region 8a. The density of the holes in the third region 8c may be higher than the density of the holes in the second region 8b. The density of the holes in the fourth region 8d may be higher than the density of the holes in the third region 8c. The density of the holes in the fifth region 8e may be higher than the density of the holes in the fourth region 8d. The density of the holes in the sixth region 8f may be higher than the density of the holes in the fifth region 8e. The density of the holes in the seventh region 8g may be higher than the density of the holes in the sixth region 8f.

[0094] According to the power semiconductor device 100 of the sixth embodiment, when the adhesive sheet 6 passes through the interior of the anti-flow frame 8, the fluid resistance is the largest at the center of the edge, and the fluid resistance is the smallest at the corner. Therefore, the adhesive sheet 6 easily flows to the corner side of the adhesive sheet 6. Accordingly, the internal pressure of the outer peripheral surface 6c of the adhesive sheet 6 can be made uniform.

[0095] Implementation method 7.

[0096] Next, the structure of the power semiconductor device 100 of the seventh embodiment will be described. The same reference numerals as those of the power semiconductor device 100 of the first embodiment are given to the same structures as those of the power semiconductor device 100 of the first embodiment, and the description thereof will not be repeated. The following description will focus mainly on the structures that are different from those of the power semiconductor device 100 of the first embodiment.

[0097] Fig.16 1 is a schematic cross-sectional view showing the structure of a power semiconductor device 100 according to a seventh embodiment. Fig.16 The cross section and along Figure 2 The cross section of the line III-III corresponds to that of the line III-III. In the power semiconductor device 100 of the seventh embodiment, the flow prevention frame 8 is formed of a porous body. Fig.16 As shown in FIG. 1 , when viewed along the thickness direction of the adhesive sheet 6, the inner peripheral surface 18 has a corner 18a and a side 18b. The side 18b is connected to the corner 18a. The side 18b is a straight line. Fig.16 As shown, the width of the anti-flow frame 8 decreases as it moves from the center of the side 18b toward the corner 18a. From other viewpoints, the anti-flow frame 8 has the largest width at the center of the side 18b, and the anti-flow frame 8 has the smallest width at the corner 18a.

[0098] According to the power semiconductor device 100 of the seventh embodiment, when the adhesive sheet 6 passes through the interior of the anti-flow frame 8, the fluid resistance is the largest at the center of the edge, and the fluid resistance is the smallest at the corner. Therefore, the adhesive sheet 6 easily flows to the corner side of the adhesive sheet 6. Accordingly, the internal pressure of the outer peripheral surface 6c of the adhesive sheet 6 can be made uniform.

[0099] Implementation method 8.

[0100] Next, the structure of the power semiconductor device 100 of the eighth embodiment will be described. The same reference numerals as those of the power semiconductor device 100 of the first embodiment are given to the same structures as those of the power semiconductor device 100 of the first embodiment, and the description thereof will not be repeated. The following description will focus mainly on the structures that are different from those of the power semiconductor device 100 of the first embodiment.

[0101] Fig.17 1 is a schematic cross-sectional view showing the structure of a power semiconductor device 100 according to an eighth embodiment. Fig.17 The cross section and along Figure 2 The cross section corresponds to the III-III line. Fig.18 For along Fig.17 Schematic diagram of the cross section of line XVIII-XVIII. Fig.18 As shown, in the power semiconductor device 100 of the eighth embodiment, the anti-flow frame 8 may include two or more layers made of different materials. Fig.18As shown, in the anti-flow frame 8, multiple layers are stacked in the thickness direction. Specifically, the anti-flow frame 8, for example, has a first layer 13a, a second layer 13b and a third layer 13c. The second layer 13b is above the third layer 13c. The first layer 13a is above the second layer 13b. The second layer 13b is located between the first layer 13a and the third layer 13c. The material of the first layer 13a is different from the material of the second layer 13b. The material of the third layer 13c is different from the material of the second layer 13b. For example, the material of the first layer 13a can be a porous body, and the material of the second layer 13b can be a solid material. The solid material is, for example, a soft metal such as tin or a silicon-based rubber material.

[0102] According to the power semiconductor device 100 of the eighth embodiment, even if the material is difficult to increase in thickness, a plurality of them can be stacked to form an anti-flow frame 8 having a desired thickness. This can expand the selection range of the material of the anti-flow frame 8, which is advantageous in terms of ease of selection and material cost.

[0103] Next, the structure of the power semiconductor device 100 according to the first modified example of the eighth embodiment is described. In the first modified example of the eighth embodiment, the power semiconductor device 100 is configured to have a Fig.14 The anti-flow frame 8 of the shape shown. Specifically, as Fig.14 As shown, when observed along the thickness direction of the adhesive sheet 6, the inner peripheral surface 18 of the anti-flow frame 8 has a corner 18a and a side 18b. The side 18b is connected to the corner 18a. The side 18b is bent in a way that it bulges inward. The width of the anti-flow frame 8 decreases as it moves from the center of the side 18b toward the corner 18a.

[0104] Next, the structure of the power semiconductor device 100 according to the second modified example of the eighth embodiment is described. In the second modified example of the eighth embodiment, the power semiconductor device 100 adopts Fig.15 The anti-flow frame 8 is shaped as shown. Specifically, the anti-flow frame 8 is composed of a porous body. Fig.15 As shown, when observed along the thickness direction of the adhesive sheet 6, the inner peripheral surface 18 has a corner 18a and an edge 18b. The edge 18b is connected to the corner 18a. The edge 18b is linear. The diameter of the pores of the porous body increases from the center of the edge 18b to the corner 18a. The density of the pores of the porous body can increase from the center of the edge 18b to the corner 18a.

[0105] Next, the structure of the power semiconductor device 100 according to the third modified example of the eighth embodiment is described. In the power semiconductor device 100 according to the third modified example of the eighth embodiment, Fig.16 The anti-flow frame 8 is shaped as shown. Specifically, the anti-flow frame 8 is composed of a porous body. Fig.16As shown, when viewed along the thickness direction of the adhesive sheet 6, the inner peripheral surface 18 has a corner 18a and a side 18b. The side 18b is connected to the corner 18a. The side 18b is straight. The width of the anti-flow frame 8 decreases from the center of the side 18b toward the corner 18a.

[0106] Implementation method 9.

[0107] Next, the structure of the power semiconductor device 100 of Embodiment 9 will be described. The same reference numerals as those of the power semiconductor device 100 of Embodiment 1 are given to the same structures as those of the power semiconductor device 100 of Embodiment 1, and the description thereof will not be repeated. The following description will focus mainly on the structures that are different from those of the power semiconductor device 100 of Embodiment 1.

[0108] Fig.19 1 is a schematic cross-sectional view showing the structure of a power semiconductor device 100 according to a ninth embodiment. Fig.19 The cross section and along Figure 2 The cross section corresponds to the III-III line. Fig. 20 For along Fig.19 A schematic cross-sectional view of the XX-XX line. Fig.19 As shown in FIG. 1 , when viewed along the thickness direction of the adhesive sheet 6, the inner peripheral surface 18 has a corner 18a and an edge 18b. The edge 18b is connected to the corner 18a. Fig.19 and Fig. 20 As shown, in the power semiconductor device 100 of the ninth embodiment, a plurality of recesses 12 are provided on the inner peripheral surface 18. The density of the plurality of recesses 12 decreases from the center of the side toward the corner. The material of the flow prevention frame 8 is, for example, a solid material. Fig. 20 As shown, the plurality of recesses 12 may be distributed in the thickness direction of the anti-flow frame 8 or in the width direction of the anti-flow frame 8. The adhesive sheet 6 enters at least a portion of the plurality of recesses 12. The plurality of recesses 12 may be exposed on the outer wall surface 28 of the anti-flow frame 8.

[0109] According to the power semiconductor device 100 of the ninth embodiment, when the adhesive sheet 6 passes through the interior of the anti-flow frame 8, the fluid resistance is the largest at the center of the edge, and the fluid resistance is the smallest at the corner. Therefore, the adhesive sheet 6 easily flows to the corner side of the adhesive sheet 6. Accordingly, the internal pressure of the outer peripheral surface 6c of the adhesive sheet 6 can be made uniform.

[0110] Implementation method 10.

[0111] In this embodiment, the power semiconductor device 100 of any of Embodiments 1 to 9 is applied to a power converter. The present disclosure is not limited to a specific power converter, and the present disclosure is applied to a three-phase inverter as Embodiment 10.

[0112] Fig.21 This is a block diagram showing the configuration of a power conversion system to which the power conversion device according to the tenth embodiment is applied.

[0113] Fig.21 The power conversion system shown includes a power supply 150, a power conversion device 250, and a load 300. The power supply 150 is a DC power supply, and supplies DC power to the power conversion device 250. The power supply 150 can be composed of various devices, for example, it can be composed of a DC system, a solar cell, a storage battery, or it can be composed of a rectifier circuit or an AC / DC converter connected to an AC system. In addition, the power supply 150 can also be composed of a DC / DC converter that converts the DC power output from the DC system into a predetermined power.

[0114] The power conversion device 250 is a three-phase inverter connected between the power source 150 and the load 300, converts the DC power supplied from the power source 150 into AC power, and supplies the AC power to the load 300. Fig.21 As shown, the power conversion device 250 includes: a main conversion circuit 251 that converts DC power into AC power and outputs the AC power; and a control circuit 253 that outputs a control signal for controlling the main conversion circuit 251 to the main conversion circuit 251 .

[0115] Load 300 is a three-phase motor driven by AC power supplied from power converter 250. Load 300 is not limited to a specific use, and is a motor mounted on various electrical devices, such as a motor for hybrid vehicles, electric vehicles, rail vehicles, elevators, or air conditioners.

[0116] The following describes the details of the power conversion device 250. The main conversion circuit 251 includes a switching element and a return diode (not shown), and the DC power supplied from the power supply 150 is converted into AC power by switching the switching element and supplied to the load 300. There are various structures as the specific circuit structure of the main conversion circuit 251, and the main conversion circuit 251 of this embodiment can be a two-level three-phase full-bridge circuit, including 6 switching elements and 6 return diodes connected in anti-parallel to each switching element. Each switching element and each return diode of the main conversion circuit 251 includes a semiconductor module 252 corresponding to any of the above-mentioned embodiments 1 to 9. Among the 6 switching elements, every two switching elements are connected in series to form upper and lower branches, and each upper and lower branch constitutes each phase (U phase, V phase, W phase) of the full-bridge circuit. Then, the output terminal of each upper and lower branch, that is, the three output terminals of the main conversion circuit 251, is connected to the load 300.

[0117] In addition, the main conversion circuit 251 is provided with a driving circuit (not shown) for driving each switching element. The driving circuit may be built into the semiconductor module 252 or may be provided separately from the semiconductor module 252. The driving circuit generates a driving signal for driving the switching element of the main conversion circuit 251 and supplies it to the control electrode of the switching element of the main conversion circuit 251. Specifically, according to the control signal from the control circuit 253 described later, a driving signal for turning the switching element into an on state and a driving signal for turning the switching element into an off state are output to the control electrode of each switching element. When the switching element is maintained in an on state, the driving signal is a voltage signal (on signal) above the threshold voltage of the switching element, and when the switching element is maintained in an off state, the driving signal is a voltage signal (off signal) below the threshold voltage of the switching element.

[0118] The control circuit 253 controls the switch elements of the main conversion circuit 251 so that the desired power is supplied to the load 300. Specifically, the time (on-time) that each switch element of the main conversion circuit 251 should be in the on state is calculated based on the power to be supplied to the load 300. For example, the main conversion circuit 251 can be controlled by PWM control that modulates the on time of the switch element according to the voltage to be output. Then, a control instruction (control signal) is output to the drive circuit of the main conversion circuit 251 so that an on signal is output for the switch element that should be in the on state and an off signal is output for the switch element that should be in the off state at each time point. The drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switch element according to the control signal.

[0119] According to the power conversion device of this embodiment, since the power semiconductor device 100 of any of Embodiments 1 to 9 is applied as a switching element and a freewheeling diode of the main conversion circuit 251 , the reliability of the power conversion device can be improved.

[0120] In this embodiment, an example of applying the present invention to a two-level three-phase inverter is described, but the present disclosure is not limited thereto and can be applied to various power conversion devices. Although a two-level power conversion device is used in this embodiment, a three-level or multi-level power conversion device can also be used. When power is supplied to a single-phase load, the present disclosure can also be applied to a single-phase inverter. In addition, when power is supplied to a DC load, the present disclosure can also be applied to a DC / DC converter or an AC / DC converter.

[0121] In addition, the power conversion device to which the present invention is applied is not limited to the case where the load is an electric motor as described above. For example, it can also be used as a power supply device for an electric discharge machine, a laser processing machine, an induction heating cooker, or a contactless power supply system, and can also be used as a power conditioner for a solar power generation system, a power storage system, etc.

[0122] It should be understood that the embodiments disclosed this time are illustrative and non-restrictive in all aspects. At least two embodiments of the embodiments disclosed this time can be combined as long as there is no contradiction. The scope of this application is not shown by the above description but by the claims, and it is intended to include all changes within the meaning and scope equivalent to the claims.

Claims

1. A semiconductor device for electric power, comprising: Power module department; An adhesive sheet, bonded to the power module portion; a supporting member connected to the power module portion via the adhesive sheet; and an anti-flow frame, which is sandwiched between the power module portion and the supporting member and is arranged around the adhesive sheet, in, The adhesive sheet has an outer peripheral surface in contact with the inner peripheral surface of the anti-flow frame, The anti-flow frame is composed of a porous body. A value obtained by dividing the maximum value of the internal pressure on the outer peripheral surface by the minimum value of the internal pressure is greater than or equal to 1 and less than or equal to 10.

2. The power semiconductor device according to claim 1, wherein: When viewed in the thickness direction of the pressure-sensitive adhesive sheet, the inner peripheral surface is a rectangle with arc-shaped corners.

3. The power semiconductor device according to claim 1, wherein: When viewed along the thickness direction of the adhesive sheet, the inner peripheral surface is circular.

4. The power semiconductor device according to claim 1, wherein: The adhesive sheet includes a central portion surrounded by the outer peripheral surface, The thickness of the adhesive sheet increases from the central portion toward the outer peripheral surface.

5. The power semiconductor device according to claim 1, wherein: The anti-flow frame consists of 1 layer.

6. The power semiconductor device according to claim 5, wherein: When viewed along the thickness direction of the adhesive sheet, the inner peripheral surface has a corner portion and a side portion connected to the corner portion, and the side portion is bent in a manner of convexly projecting inwardly. The width of the anti-flow frame decreases from the center of the side portion toward the corner portion.

7. The power semiconductor device according to claim 5, wherein: When viewed along the thickness direction of the adhesive sheet, the inner peripheral surface has a corner and a side connected to the corner, and the side is straight. The diameter of the pores of the porous body increases from the center of the side portion toward the corner portion.

8. The power semiconductor device according to claim 5, wherein: When viewed along the thickness direction of the adhesive sheet, the inner peripheral surface has a corner and a side connected to the corner, and the side is straight. The width of the anti-flow frame decreases from the center of the side portion toward the corner portion.

9. The power semiconductor device according to claim 1, wherein: The anti-flow frame includes two or more layers made of different materials.

10. The power semiconductor device according to claim 9, wherein: When viewed along the thickness direction of the adhesive sheet, the inner peripheral surface has a corner portion and a side portion connected to the corner portion, and the side portion is bent in a manner of convexly projecting inwardly. The width of the anti-flow frame decreases from the center of the side portion toward the corner portion.

11. The power semiconductor device according to claim 9, wherein: When viewed along the thickness direction of the adhesive sheet, the inner peripheral surface has a corner and a side connected to the corner, and the side is straight. The diameter of the pores of the porous body increases from the center of the side portion toward the corner portion.

12. The power semiconductor device according to claim 9, wherein: When viewed along the thickness direction of the adhesive sheet, the inner peripheral surface has a corner and a side connected to the corner, and the side is straight. The width of the anti-flow frame decreases from the center of the side portion toward the corner portion.

13. The power semiconductor device according to claim 9, wherein: When viewed along the thickness direction of the adhesive sheet, the inner peripheral surface has a corner portion and a side portion connected to the corner portion. A plurality of recesses are provided on the inner peripheral surface, The density of the plurality of recessed portions decreases from the center of the side portion toward the corner portion.

14. A power conversion device comprising: A main conversion circuit, comprising the power semiconductor device according to any one of claims 1 to 13, the main conversion circuit converting input power and outputting the converted power; and The control circuit outputs a control signal for controlling the main conversion circuit to the main conversion circuit.

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