A reaction chamber protective shell and a plasma etching device

Abstract

The present application provides a reaction chamber protective shell and a plasma etching device. The reaction chamber protective shell includes: a main body, which is a hollow cylindrical shape, and the size of the main body matches that of the reaction chamber; a mounting portion, located at the top of the main body, for mounting the reaction chamber protective shell in the reaction chamber; a chassis, located at the bottom of the main body, the chassis is in a circular ring shape, and a plurality of air extraction holes are provided on the chassis, and the plurality of air extraction holes are configured to have a uniform suction force on the center of the chassis during air extraction; the main body, the mounting portion and the chassis are of an integral structure. The present application provides a reaction chamber protective shell and a plasma etching device. A plurality of air extraction holes with sizes increasing sequentially from the center of the circle to the edge are provided at the bottom of the reaction chamber protective shell, which can make the flow of the plasma in the reaction chamber more stable and uniform, make the plasma evenly distributed on the surface of the wafer, and improve the reaction efficiency and reaction stability.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and particularly to a reaction chamber protective shell and a plasma etching device. Background Art

[0002] Inductive Coupled Plasma (ICP) etching technology is an important process in the manufacturing process of semiconductor chips. The plasma etching process is completed by a plasma etching machine. The steps of the plasma etching process include the introduction of etching gas, the generation of plasma, the diffusion of plasma to the surface of the sample to be etched, the diffusion of plasma on the surface to be etched, the reaction of plasma with surface substances, and the desorption and discharge of reaction products, etc.

[0003] During the entire etching process, in order to ensure the efficiency and stability of the etching process, it is necessary to ensure that the flow trend of the plasma generated by the etching gas in the reaction chamber is stable; in addition, it is also necessary to protect the inner wall of the equipment from being contaminated by reactants. Currently, a reaction chamber liner is generally used to protect the inner wall of the reaction chamber, and a vacuum pumping ring is arranged below the reaction chamber liner to guide the flow of plasma through pumping to make the plasma flow trend stable.

[0004] However, the current reaction chamber liner and vacuum pumping ring still have problems, the protection of the inner wall of the reaction chamber is not good enough, and the flow of plasma is not yet stable and uniform enough. Therefore, it is necessary to provide a more effective and reliable technical solution to better protect the inner wall of the reaction chamber from being contaminated and make the flow of plasma in the reaction chamber more stable and uniform. Summary of the Invention

[0005] The present application provides a reaction chamber protective shell and a plasma etching device, which can better protect the inner wall of the reaction chamber from being contaminated, make the flow of plasma in the reaction chamber more stable and uniform, make the plasma evenly distributed on the wafer surface, improve the reaction efficiency and reaction stability, and the installation, disassembly and maintenance of the reaction chamber protective shell are more convenient.

[0006] One aspect of the present application provides a reaction chamber protective shell for a plasma etching device, including: a main body, the main body is a hollow cylindrical shape, and the size of the main body matches that of the reaction chamber; a mounting portion located at the top of the main body for mounting the reaction chamber protective shell in the reaction chamber; a chassis located at the bottom of the main body, the chassis is a circular ring shape, and a plurality of air extraction holes are arranged on the chassis, and the plurality of air extraction holes are configured to have uniform suction force on the center of the chassis during air extraction; the main body, the mounting portion and the chassis are an integral structure.

[0007] In some embodiments of the present application, the plurality of air extraction holes are evenly distributed on the chassis.

[0008] In some embodiments of the present application, the plurality of air extraction holes are distributed in a concentric circle staggered manner.

[0009] In some embodiments of the present application, the sizes of the plurality of air extraction holes increase sequentially from the center of the concentric circles outward.

[0010] In some embodiments of the present application, the interior of the chassis further includes a hollow structure, and the hollow structure communicates with all or part of the plurality of air extraction holes.

[0011] In some embodiments of the present application, the shapes of the plurality of air extraction holes are circular.

[0012] In some embodiments of the present application, the diameters of the plurality of air extraction holes are 5 to 10 millimeters.

[0013] In some embodiments of the present application, a bending portion is further provided on a side of the chassis away from the main body, and the bending portion fits against the side wall of the carrier table in the reaction chamber.

[0014] In some embodiments of the present application, the mounting portion is provided with mounting holes, and the reaction chamber protective shell is mounted in the reaction chamber through bolts and the mounting holes.

[0015] Another aspect of the present application further provides a plasma etching apparatus, including: a reaction chamber; the reaction chamber protective shell as described above, disposed in the reaction chamber, and the chassis of the reaction chamber protective shell divides the reaction chamber into a reaction portion and an air extraction portion, and the air extraction portion is connected to an air extraction pump; a carrier table, disposed in the middle of the chassis and matching with the hollow portion in the middle of the chassis, for carrying a wafer.

[0016] The present application provides a reaction chamber protective shell and a plasma etching apparatus. The reaction chamber protective shell is an integral structure, which is more convenient for installation, disassembly and maintenance, and can better protect the inner wall of the reaction chamber from being contaminated; in addition, a plurality of air extraction holes with sizes increasing sequentially from the center to the edge are provided at the bottom of the reaction chamber protective shell, which can make the flow of plasma in the reaction chamber more stable and uniform, make the plasma evenly distributed on the wafer surface, and improve the reaction efficiency and reaction stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The following drawings detail the exemplary embodiments disclosed in the present application. Wherein the same reference numerals represent similar structures in several views of the drawings. Those of ordinary skill in the art will understand that these embodiments are non-limiting, exemplary embodiments, and the drawings are only for the purpose of illustration and description, and are not intended to limit the scope of the present application. Embodiments in other ways may also achieve the inventive concept in the present application. It should be understood that the drawings are not drawn to scale.

[0018] Wherein:

[0019] Figure 1 is a schematic structural diagram of a plasma etching device;

[0020] Figure 2 is a schematic longitudinal sectional structure diagram of a reaction chamber protective shell according to an embodiment of the present application;

[0021] Figure 3 is a top view of a reaction chamber protective shell according to an embodiment of the present application;

[0022] Figure 4 is a schematic structural diagram of a chassis according to some embodiments of the present application;

[0023] Figure 5 is a schematic structural diagram of a chassis according to other embodiments of the present application;

[0024] Figure 6 is a schematic longitudinal sectional view of a chassis according to an embodiment of the present application;

[0025] Figure 7 is a schematic structural diagram of a plasma etching device according to an embodiment of the present application. Detailed Description of the Invention

[0026] The following description provides specific application scenarios and requirements of the present application, aiming to enable those skilled in the art to manufacture and use the content of the present application. For those skilled in the art, various partial modifications to the disclosed embodiments are obvious, and the general principles defined here can be applied to other embodiments and applications without departing from the spirit and scope of the present application. Therefore, the present application is not limited to the illustrated embodiments, but has the broadest scope consistent with the claims.

[0027] The technical solution of the present invention will be described in detail below in conjunction with the embodiments and the drawings.

[0028] Figure 1 is a schematic structural diagram of a plasma etching device 100.

[0029] Referring to Figure 1 as shown, the plasma etching device 100 includes: a reaction chamber 110; a carrier table 120 disposed at the center of the reaction chamber 110 for carrying a wafer 130; a chamber inner lining 140 disposed on the inner wall of the reaction chamber 110 for protecting the inner wall of the reaction chamber 110; and a vacuum pumping ring 150 disposed below the chamber inner lining 140 and connected to the carrier table 120.

[0030] However, on the one hand, the cavity liner 140 and the vacuum pumping ring 150 are two independent structures and are separated. They are respectively installed on the reaction chamber 110. Therefore, the requirement for the connection tightness between the cavity liner 140 and the vacuum pumping ring 150 is very high. Otherwise, the reaction gas will remain in the gap between the cavity liner 140 and the vacuum pumping ring 150 and is difficult to remove, which will affect the use of the cavity liner 140 and the vacuum pumping ring 150. And because the cavity liner 140 and the vacuum pumping ring 150 are separated, they also need to be installed or removed sequentially during installation or disassembly, which is very troublesome.

[0031] On the other hand, a plurality of pumping grooves (not shown in the figure) are provided on the vacuum pumping ring 150. The cavity of the reaction chamber 110 below the vacuum pumping ring 150 is connected to a pumping pump. The cavity of the reaction chamber 110 above the vacuum pumping ring 150 is evacuated by the pumping pump, and the flow of plasma in the cavity is guided by pumping. However, the size and distribution of the plurality of pumping grooves do not consider the distance factor from the wafer 130. Therefore, during pumping, the pumping grooves on the vacuum pumping ring 150 closer to the wafer 130 have a greater suction force on the plasma above the wafer. That is, the suction forces of the pumping grooves at different positions on the vacuum pumping ring 150 on the plasma above the wafer are uneven, which will still affect the flow of the plasma, making the plasma flow unstable and unevenly distributed.

[0032] To solve the above problems, the present application provides a reaction chamber protective shell and a plasma etching device. The reaction chamber protective shell is an integral structure, which is more convenient for installation, disassembly and maintenance, and can better protect the inner wall of the reaction chamber from being polluted. In addition, a plurality of air extraction holes with sizes increasing sequentially from the center to the edge are provided at the bottom of the reaction chamber protective shell, which can make the flow of plasma in the reaction chamber more stable and uniform, make the plasma evenly distributed on the wafer surface, and improve the reaction efficiency and reaction stability.

[0033] Figure 2 It is a schematic longitudinal sectional structure diagram of a reaction chamber protective shell according to an embodiment of the present application. Figure 3 It is a top view of a reaction chamber protective shell according to an embodiment of the present application. Among them, Figure 2 is the longitudinal sectional view taken along the Figure 3 dotted line in

[0034] An embodiment of the present application provides a reaction chamber protective shell 200 for a plasma etching device. Refer to Figure 2 and Figure 3As shown, it includes: a main body 210, which is a hollow cylindrical shape and whose size matches that of the reaction chamber; a mounting part 220 located at the top of the main body 210 for mounting the reaction chamber protective shell 200 in the reaction chamber; a chassis 230 located at the bottom of the main body 210. The chassis 230 is in a circular ring shape, and a number of air extraction holes are provided on the chassis 230. The number of air extraction holes is configured to make the suction force on the center of the chassis 230 uniform during air extraction; the main body 210, the mounting part 220, and the chassis 230 are of an integral structure. The orientation where the number of air extraction holes is configured to make the suction force on the center of the chassis 230 uniform is that the sizes of the number of air extraction holes increase sequentially from the center of the chassis 230 outwards.

[0035] The reaction chamber protective shell 200 is in a cylindrical shape. Figure 2 Shown is a longitudinal sectional view of the reaction chamber protective shell 200 along the diameter of the cylinder.

[0036] The reaction chamber protective shell 200 is an integral whole, that is, an integrally formed one-piece structure. The reaction chamber protective shell 200 is an integral whole without any gaps, and has a better protective ability for the inner wall of the reaction chamber. In addition, the reaction chamber protective shell 200 is installed and disassembled as a whole, and the installation and disassembly are more convenient, faster, and easier to maintain.

[0037] Refer to Figure 3 As shown, in some embodiments of the present application, mounting holes 221 ( Figure 2 not shown in the figure) are provided on the mounting part 220. The mounting part 220 mounts the reaction chamber protective shell 200 in the reaction chamber through bolts and the mounting holes 221. Corresponding screw holes are also provided at the corresponding positions of the reaction chamber. By connecting the mounting holes 221 on the mounting part 220 and the screw holes on the reaction chamber with bolts, the reaction chamber protective shell 200 can be mounted in the reaction chamber.

[0038] In some embodiments of the present application, the number of the mounting holes 221 is two or four or more. The mounting holes 221 are evenly distributed on the mounting part 220.

[0039] In some embodiments of the present application, a bending part 240 is further provided on the side of the chassis 230 away from the main body 210. The bending part 240 fits the side wall of the bearing platform in the reaction chamber. The bending part 240 is tightly connected to the side wall of the bearing platform in the reaction chamber to seal the reaction chamber cavity above the chassis 230.

[0040] Continue to refer to Figure 3 As shown, a number of air extraction holes 231 ( Figure 2 not shown in the figure) are provided on the chassis 230. It should be noted that Figure 3Only the distribution positions of some extraction holes 231 are simply shown herein, and the detailed distribution of the several extraction holes 231 on the chassis 230 will be described later.

[0041] Through the several extraction holes 231, the reaction chamber cavity above the chassis 230 can be evacuated, so that the reaction chamber is under vacuum conditions. In addition, pumping air through the several extraction holes 231 can also guide the gas flow in the reaction chamber, and thus guide the plasma flow. However, the arrangement of the extraction holes in some current plasma etching equipment is not yet reasonable enough. For example, the problem of the distance between the extraction holes and the center of the chassis 230 is not considered. Therefore, when pumping air, the extraction holes closer to the center of the chassis 230 have a greater suction force on the plasma above the wafer. That is to say, the suction forces of the extraction holes at different positions on the center of the chassis 230 are uneven, which still affects the plasma flow, making the plasma flow unstable and unevenly distributed.

[0042] In view of the above problems, in the technical solution of the present application, the shapes, sizes and distributions of the several extraction holes 231 are specially set so that the suction forces of the several extraction holes 231 on the center of the chassis 230 are uniform. That is to say, the suction forces of the extraction holes 231 at different positions at the center of the chassis 230 are equal.

[0043] Figure 4 It is a schematic structural diagram of the chassis in some embodiments of the present application.

[0044] Refer to Figure 4 As shown, the shapes of the several extraction holes 231 are circular.

[0045] The several extraction holes 231 are evenly distributed on the chassis 230. The several extraction holes 231 are distributed in a concentric circle radial pattern. The sizes of the several extraction holes 231 increase sequentially from the center of the concentric circles outward. That is, the diameters of the extraction holes 231 at the edge of the chassis 230 are larger than those of the extraction holes 231 closer to the inside. The extraction holes 231 located at the edge of the chassis 230 have a larger diameter, so the suction force generated by the extraction holes 231 located at the edge of the chassis 230 is greater. However, the extraction holes 231 located at the edge of the chassis 230 are farther from the center of the chassis 230, and the suction force gradually attenuates as the distance increases. As long as the appropriate sizes of the extraction holes are set, the suction forces of the extraction holes 231 at different positions at the center of the chassis 230 can be made the same. Furthermore, the several extraction holes 231 can make the plasma flow more stable and more evenly distributed.

[0046] In some embodiments of the present application, the diameters of the plurality of air extraction holes 231 are 5 to 10 millimeters, such as 6 millimeters, 7 millimeters, 8 millimeters, or 9 millimeters, etc. The diameter settings of the plurality of air extraction holes 231 are completely different from those in conventional plasma etching equipment. For the reasons described above, the diameter settings of the plurality of air extraction holes 231 must be strictly set according to the position of the air extraction holes 231 on the chassis 230, the distance between the air extraction holes 231 and the center of the chassis 230, and the power of the air extraction pump. Otherwise, it is impossible to make the suction forces at the center of the chassis 230 of the air extraction holes 231 at different positions the same.

[0047] The diameter settings of the plurality of air extraction holes 231 can refer to the following demonstration: In one embodiment, the inner diameter of the main body 210 of the reaction chamber protective shell 200 is about 400 millimeters, and the outer diameter is about 405 millimeters. The outer diameter of the chassis 230 is about 405 millimeters, and the inner diameter is about 267 millimeters. The diameters of the plurality of air extraction holes 231 are 5 to 10 millimeters. Specifically, for example, the diameter of the air extraction hole 231 closest to the inner circle of the chassis 230 is 5 millimeters, and the diameter of the air extraction hole 231 closest to the outer circle of the chassis 230 is 10 millimeters. The change gradient of the diameters of the air extraction holes 231 increasing sequentially from the innermost circle to the outermost circle can be set such that for every increase of 5 to 10 millimeters (such as 6 millimeters, 7 millimeters, 8 millimeters, or 9 millimeters, etc.) in the distance from the center of the chassis 230, the diameter of the air extraction hole 231 increases by 0.5 to 1.5 millimeters (such as 0.8 millimeters, 1 millimeter, or 1.2 millimeters, etc.).

[0048] Figure 5 This is a schematic structural diagram of the chassis in some other embodiments of the present application.

[0049] Figure 5 The structure shown is the same as that of Figure 4 The structure shown except that the distribution of the air extraction holes 231 is different.

[0050] Figure 4 In the structure shown, the plurality of air extraction holes 231 are radially distributed. However, there are gaps between two radiation lines in this way, and no suction force is generated in this part of the gap, which will also make the plasma distribution uneven. Therefore, in Figure 5 In the structure shown, the plurality of air extraction holes 231 are distributed in a concentric circle staggered manner. The adjacent two circles of air extraction holes 231 are staggered with each other, so that the center of the chassis 230 can receive suction forces from all directions in the horizontal plane. The plasma is more evenly distributed under the guidance of the suction force.

[0051] Figure 6 This is a schematic longitudinal sectional view of the chassis according to the embodiments of the present application.

[0052] Refer to Figure 6As shown, the interior of the chassis 230 further includes a hollow structure 232, and the hollow structure 232 communicates with all or part of the plurality of air extraction holes 231.

[0053] In practice, an air extraction pump for extracting air from the plurality of air extraction holes 231 is generally disposed on one side of the reaction chamber. Therefore, the suction force of the air extraction holes closer to the air extraction pump is greater. This also affects the suction force uniformity of the plurality of air extraction holes 231. Therefore, in the technical solution of the present application, after the plurality of air extraction holes 231 are communicated through the hollow structure 232, the air extraction holes 231 at different positions are connected, and the suction forces generated by the air extraction holes 231 at different positions are the same.

[0054] The present application provides a reaction chamber protective shell, which is an integral structure, making installation, disassembly and maintenance more convenient, and can better protect the inner wall of the reaction chamber from being contaminated; in addition, a plurality of air extraction holes with sizes increasing sequentially from the center to the edge are provided at the bottom of the reaction chamber protective shell, which can make the flow of plasma in the reaction chamber more stable and uniform, make the plasma evenly distributed on the wafer surface, and improve the reaction efficiency and reaction stability.

[0055] Figure 7 It is a schematic structural diagram of the plasma etching equipment according to an embodiment of the present application.

[0056] An embodiment of the present application further provides a plasma etching equipment, refer to Figure 7 As shown, it includes: a reaction chamber 310; the reaction chamber protective shell 200 as described above, which is disposed in the reaction chamber 310. The chassis 230 of the reaction chamber protective shell 200 divides the reaction chamber 310 into a reaction part 311 and an air extraction part 322, and the air extraction part 322 is connected to an air extraction pump; a carrier table 320, which is disposed in the middle of the chassis 230 and matches the hollow part in the middle of the chassis 230 for carrying the wafer 30.

[0057] The detailed structure of the reaction chamber protective shell 200 has been described above and will not be repeated here.

[0058] The bent part 240 on the chassis 230 can also be used to fix the wafer 330 and protect the side wall of the wafer 330.

[0059] During operation, the reaction part 311 of the reaction chamber 310 is in a sealed state. The reaction part 311 can be pumped to a vacuum state by an air extraction pump connected to the air extraction part 322. During the reaction process, the air extraction pump continuously extracts air, and the plasma above the wafer 330 can be guided to flow through the plurality of air extraction holes 231 on the chassis 230, making the plasma flow more stable and evenly distributed, thereby improving the reaction efficiency and stability.

[0060] The present application provides a reaction chamber protective shell and a plasma etching device. The reaction chamber protective shell is an integrated structure, which is more convenient for installation, disassembly and maintenance, and can better protect the inner wall of the reaction chamber from being contaminated. In addition, a plurality of air extraction holes with sizes increasing sequentially from the center to the edge are provided at the bottom of the reaction chamber protective shell, which can make the flow of plasma in the reaction chamber more stable and uniform, make the plasma evenly distributed on the wafer surface, and improve the reaction efficiency and reaction stability.

[0061] In summary, after reading the content of the present application, those skilled in the art can understand that the foregoing application content can be presented only by way of example and may not be restrictive. Although not explicitly stated here, those skilled in the art can understand that the present application is intended to encompass various reasonable changes, improvements and modifications to the embodiments. These changes, improvements and modifications are all within the spirit and scope of the exemplary embodiments of the present application.

[0062] It should be understood that the term "and / or" used in this embodiment includes any or all combinations of one or more of the associated listed items. It should be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element, or there may also be intermediate elements.

[0063] Similarly, it should be understood that when an element is referred to as being "on" another element, it can be directly on the other element, or there may also be intermediate elements. In contrast, the term "directly" means without intermediate elements. It should also be understood that the terms "comprise", "comprising", "include" or "including", when used in this application document, specify the presence of the recited features, wholes, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or their groups.

[0064] It should also be understood that although the terms first, second, third, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Therefore, without departing from the teachings of the present application, the first element in some embodiments may be referred to as the second element in other embodiments. The same reference numerals or the same reference markers represent the same elements throughout the specification.

[0065] In addition, the specification of the present application describes exemplary embodiments by referring to idealized exemplary cross-sectional views and / or plan views and / or perspective views. Therefore, differences from the shapes shown in the figures due to, for example, manufacturing techniques and / or tolerances are foreseeable. Accordingly, the exemplary embodiments should not be construed as being limited to the shapes of the regions shown herein, but should include deviations in the shapes caused by, for example, manufacturing. Thus, the regions shown in the figures are substantially schematic, and their shapes are not intended to show the actual shape of the regions of the device nor to limit the scope of the exemplary embodiments.

Claims

1. A reaction chamber protective shell for a plasma etching device, characterized in that, Comprising: A main body, which is in a hollow cylindrical shape and whose size matches that of the reaction chamber; A mounting part, located at the top of the main body, for mounting the reaction chamber protective shell in the reaction chamber; A chassis, located at the bottom of the main body. The chassis is in a circular ring shape, and a plurality of air extraction holes are provided on the chassis. The plurality of air extraction holes are configured to have uniform suction force on the center of the chassis during air extraction. A bending part is further provided on the side of the chassis away from the main body. The bending part fits against the side wall of the carrier table in the reaction chamber and is used to fix the wafer and protect the side wall of the wafer; The main body, the mounting part and the chassis are of an integral structure.

2. The reaction chamber protective shell according to claim 1, characterized in that, The plurality of air extraction holes are evenly distributed on the chassis.

3. The reaction chamber protective shell according to claim 2, wherein The plurality of air extraction holes are distributed in a concentric circle staggered manner.

4. The reaction chamber protective shell according to claim 3, characterized in that, The sizes of the plurality of air extraction holes increase successively from the center of the concentric circles outwards.

5. The reaction chamber protective shell according to claim 1, characterized in that, The interior of the chassis further includes a hollow structure, and the hollow structure communicates with all or part of the plurality of air extraction holes.

6. The reaction chamber protective shell according to claim 1, wherein, The shapes of the plurality of air extraction holes are circular.

7. The reaction chamber protective shell according to claim 6, characterized in that The diameters of the plurality of air extraction holes are 5 to 10 millimeters.

8. The reaction chamber protective shell according to claim 1, characterized in that, The mounting part is provided with mounting holes, and the mounting part mounts the reaction chamber protective shell in the reaction chamber through bolts and the mounting holes.

9. A plasma etching device, characterized in that, Comprising: A reaction chamber; The reaction chamber protective shell according to any one of claims 1 to 8, which is arranged in the reaction chamber. The chassis of the reaction chamber protective shell divides the reaction chamber into a reaction part and an air extraction part, and the air extraction part is connected to an air extraction pump; A carrier table, which is arranged in the middle of the chassis and matches the hollow part in the middle of the chassis, for carrying wafers.

Images