Perovskite solar cells and their preparation processes

Abstract

The present invention discloses a perovskite solar cell and its preparation process, relating to the technical field of solar cells. Among them, the perovskite solar cell includes: a substrate; a photoanode layer disposed at intervals on the substrate; a positive photoresist protrusion disposed at the adjacent junction of the substrate and the photoanode layer on the same side and having a gap between it and the adjacent photoanode layer; an isolation column disposed on the photoanode on the side away from the positive photoresist protrusion; a perovskite functional layer disposed between the positive photoresist protrusion and the isolation column; and a back electrode layer. The present invention solves the problems that currently, the ITO film is usually prepared at room temperature for perovskite solar cells, and the electrical properties of the ITO film are poor, affecting the efficiency of perovskite solar cells, and the process route used in the preparation process of perovskite solar cells is relatively complex, among which laser etching of patterns is likely to damage the photoanode, resulting in device failure and high difficulty in mass production processes.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and particularly to a perovskite solar cell and a preparation process thereof. Background Art

[0002] Perovskite solar cells have the advantages of being high, thin, light, low-cost, and high-efficiency. Utilizing their characteristics, a variety of products can be developed, and their applications will be more extensive and diverse. At the same time, it opens up the way for the adoption of large-scale large-area roll-to-roll processes, providing new ideas for the ultimate commercialization of perovskites.

[0003] At present, the structure of perovskite solar cells includes a flexible substrate, a transparent photoanode, a perovskite functional layer, and a back electrode. Among them, ITO is usually used for the transparent photoanode, and PET is usually used for the substrate. Due to the low Tg temperature of PET, ITO films are usually prepared at room temperature, and the electrical properties of ITO films are poor, affecting the efficiency of perovskite solar cells. The efficiency reported in the industry is 16% to 19%.

[0004] Currently, ITO is usually used for the transparent photoanode in perovskite solar cells, and PET is usually used for the substrate. Due to the low Tg temperature of PET, ITO films are usually prepared at room temperature, and the electrical properties of ITO films are poor, affecting the efficiency of perovskite solar cells. In addition, the process route used in the preparation of perovskite solar cells is relatively complex. Among them, laser etching of patterns is likely to damage the photoanode, resulting in device failure, and the mass production process is difficult. No effective solution has been proposed for the above problems. Summary of the Invention

[0005] Object of the Invention: To provide a perovskite solar cell and a preparation process thereof to solve the above problems existing in the prior art.

[0006] Technical Solution: A perovskite solar cell includes: a substrate; a photoanode layer spaced apart on the substrate; a positive photoresist protrusion disposed at the adjacent junction of the substrate and the photoanode layer and on the same side, and having a gap between it and the adjacent photoanode layer; an isolation column disposed on the photoanode on the side away from the positive photoresist protrusion; a perovskite functional layer disposed between the positive photoresist protrusion and the isolation column; and a back electrode layer filled between adjacent isolation columns and covering the substrate, the photoanode layer, the positive photoresist protrusion, and the perovskite functional layer; by respectively providing the positive photoresist protrusion on one side of the photoanode layer and the isolation column on the photoanode layer, and disposing the perovskite functional layer between the positive photoresist protrusion and the isolation column, so that the positive photoresist protrusion restricts the current flow of the perovskite functional layer and protects the edge of the photoanode layer, and the isolation column physically divides the perovskite solar cell.

[0007] Preferably, the substrate includes, but is not limited to: glass, polyimide, or PET.

[0008] Preferably, the photo - electrode layer is made of, but is not limited to: ITO, FTO, AZO.

[0009] Preferably, the shape of the positive - photoresist protrusion includes, but is not limited to: a positive trapezoid.

[0010] Preferably, the shape of the isolation pillar includes, but is not limited to: an inverted trapezoid or a T - shape.

[0011] Preferably, the isolation pillar is prepared with negative photoresist.

[0012] Preferably, a current - limiting grid layer is provided at the bottom of the substrate.

[0013] Preferably, the back - electrode layer is made of a metal material, and the metal material includes, but is not limited to: gold, silver, aluminum, or copper.

[0014] To achieve the above object, the present invention provides a preparation process for a perovskite solar cell, comprising the following steps:

[0015] Step S101: Prepare a photo - electrode layer on the substrate;

[0016] Step S102: Etch the photo - electrode layer through a yellow - light process to prepare a photo - electrode pattern;

[0017] Step S103: Coat a positive photoresist on the patterned photo - electrode layer to prepare a positive - photoresist protrusion for protection and current - limiting;

[0018] Step S104: Coat a negative photoresist above the photo - electrode layer and the positive - photoresist protrusion to prepare an isolation pillar for cathode segmentation;

[0019] Step S105: Use an organic printing device or a printing device to prepare each functional layer of the perovskite one by one;

[0020] Step S106: Prepare the back - electrode layer by thermal evaporation.

[0021] Preferably, in step S102, the photo - electrode layer is etched by a yellow - light process to prepare a photo - electrode pattern, which specifically includes the following steps: Use a magnetron sputtering device to prepare a photo - electrode ITO on a substrate. Prepare high - temperature ITO at 300 - 350°C, and the sheet resistance of the ITO is 10Ω ± 2Ω. Conduct AOI inspection and cleaning on the photo - electrode ITO substrate, and transfer it to a coating device for coating a positive - type photosensitive photoresist. The film thickness is between 0.1μm and 10μm. Transfer it to an exposure device for exposing the substrate. Transfer it to a developing device and spray it with an alkaline solution to remove the unexposed area. Transfer it to an etching device and etch the exposed photo - electrode ITO pattern with a strong acid. Transfer it to a de - gumming device to dissolve the photoresist and conduct cleaning to prepare a complete photo - electrode pattern.

[0022] Preferably, in step S103, a positive - type photoresist is coated on the patterned photo - electrode layer to prepare positive - type glue protrusions for protection and current limiting, which specifically includes the following steps: Clean the patterned photo - electrode substrate. Transfer it to a coating device and scrape - coat or spin - coat the positive - type photosensitive photoresist onto the substrate. The film thickness is between 0.5μm and 5μm. Transfer it to a vacuum baking device for pre - baking the coated substrate. Transfer it to an exposure device for exposing the substrate. Transfer it to a developing device and spray it with an alkaline solution to remove the exposed area and conduct water washing. Transfer it to a baking device to cure the positive - type glue of the current - limiting layer on the developed substrate. At least one single or single - group current - limiting layer pattern is distributed on each photo - electrode.

[0023] Preferably, in step S104, a negative - type photoresist is coated above the photo - electrode layer and the positive - type glue protrusions to prepare isolation columns for cathode segmentation, which specifically includes the following steps: Clean the patterned substrate. Transfer it to a coating device and scrape - coat or spin - coat the negative - type photosensitive photoresist onto the substrate. The film thickness is between 1μm and 10μm. Transfer it to a vacuum baking device for pre - baking the coated substrate. Transfer it to an exposure device for exposing the substrate. Transfer it to a developing device and spray it with an alkaline solution to remove the exposed area and conduct water washing. Transfer it to a baking device to cure the isolation - column glue on the developed substrate. At least one single or single - group isolation - column pattern is distributed on each photo - electrode.

[0024] Preferably, in step S105, an organic printing device or a printing device is used to prepare each functional layer of the perovskite one by one, which specifically includes the following steps: Transfer the substrate to a printing device. Prepare an electron - transport layer, conduct vacuum baking, and the film thickness is 10 - 200nm. Prepare a perovskite absorption layer, conduct vacuum baking, annealing, and the film thickness is 200 - 500nm. Prepare a hole - transport layer, conduct vacuum baking, and the film thickness is 10 - 200nm.

[0025] Preferably, in step S106, the back electrode layer is prepared by thermal evaporation plating method, which specifically includes the following steps: transferring the substrate to the evaporation chamber, and using thermal evaporation or E-beam method to prepare the back electrode metal thin film with a film thickness ≥ 50nm.

[0026] Beneficial effects: In the embodiment of the present application, by adding a positive photoresist protrusion and an isolation column, with the positive photoresist protrusion provided on one side of the photo electrode layer and the isolation column provided on the photo electrode layer, and the perovskite functional layer is disposed between the positive photoresist protrusion and the isolation column, so that the positive photoresist protrusion can limit the current and protect the edge of the photo electrode layer for the perovskite functional layer, and the isolation column physically divides the perovskite solar cell, achieving the purposes of current limiting, protection and physical division, thereby realizing the technical effect of improving the performance of the perovskite solar cell, and further solving the problems that in current perovskite solar cells, the transparent photo electrode usually uses ITO, the substrate usually uses PET, due to the low Tg temperature of PET, ITO thin films are usually prepared at room temperature, while the electrical properties of ITO thin films are poor, affecting the efficiency of perovskite solar cells, and the process route used in the preparation process of perovskite solar cells is relatively complex, where laser etching patterns are likely to damage the photoanode, resulting in device failure and high mass production process difficulty. Description of the Drawings

[0027] Figure 1 is a schematic structural diagram of the perovskite solar cell of the present invention;

[0028] Figure 2 is a process flow chart of the preparation process of the perovskite solar cell of the present invention.

[0029] The reference numerals are: 1, substrate; 2, photo electrode layer; 3, positive photoresist protrusion; 4, isolation column; 5, perovskite functional layer; 6, back electrode layer; 7, current limiting grid layer. Detailed Embodiments

[0030] In order to enable those skilled in the art to better understand the solution of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0031] It should be noted that the terms "first", "second", etc. in the description, claims and above-mentioned drawings of this application are used to distinguish similar objects, and do not necessarily have to be used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so as to implement the embodiments of this application described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0032] In addition, the terms "install", "set", "provided with", "connected", "connected to", "socketed" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, or there can be internal communication between two devices, components or parts. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0033] It should be noted that, without conflict, the embodiments in this application and the features in the embodiments can be combined with each other. The following will refer to the drawings and combine the embodiments to detail this application.

[0034] As Figure 1 shown, this application relates to a perovskite solar cell and its preparation process. The perovskite solar cell includes: a substrate 1; the substrate 1 refers to a carrier substrate that can achieve a good loading effect. Further, the substrate 1 includes but is not limited to: glass, polyimide or PET. It can achieve the effect of being selected according to the usage requirements. Preferably, the substrate 1 is a glass substrate, and the glass substrate includes: quartz or borosilicate glass substrate. It has good physical properties, such as thermal, optical and mechanical properties, etc., and can also achieve the effect of selecting various types of glass, so as to achieve the effect of flexible selection.

[0035] The photo - electrode layer 2 is disposed on the substrate 1 at intervals; by means of an etching method, the photo - electrode layer 2 is uniformly disposed on the substrate 1 at intervals, which can achieve a good arrangement effect. Further, the photo - electrode layer 2 includes, but is not limited to: ITO, FTO, AZO. By forming a conductive thin film on one side of the glass substrate, it can transfer the electrons collected in the battery to the external circuit in the battery; the conductive layer should be subjected to a texturing treatment to remove part of the conductive film, so that the positive and negative electrodes at one end of adjacent monomer cells are in an insulating state, while the remaining conductive layer realizes the series connection of the positive and negative electrodes at the other end of adjacent cells; it can be prepared by mask evaporation, magnetron sputtering, screen printing, sol - gel, laser etching, and chemical etching. The positive photoresist protrusion 3 is disposed at the adjacent junction of the substrate 1 and the photo - electrode layer 2 and on the same side, and there is a gap between the positive photoresist protrusion 3 and the adjacent photo - electrode layer 2; it can achieve a good connection effect between the positive photoresist protrusion 3, the photo - electrode layer 2, and the substrate 1.

[0036] The isolation column 4 is disposed on the photo - electrode 2 on the side away from the positive photoresist protrusion 3; by fixedly disposing the isolation column 4 on the photo - electrode layer 2, a good physical separation effect can be achieved. At the same time, the isolation column has a certain distance from the edge of the photo - electrode layer, which can ensure a good isolation effect. Further, the isolation column 4 is prepared from negative photoresist. It can achieve the effect of providing negative isolation, thereby realizing a good polarity separation effect. Preferably, the number of isolation columns 4 is multiple. By providing multiple isolation columns 4, a multi - segment isolation effect can be achieved. The perovskite functional layer 5 is disposed between the positive photoresist protrusion 3 and the isolation column 4; by using the perovskite functional layer 5, a good solar energy conversion rate can be achieved.

[0037] The back - electrode layer 6 is filled between adjacent isolation columns 4 and covers the substrate 1, the photo - electrode layer 2, the positive photoresist protrusion 3, and the perovskite functional layer 5; by providing the back - electrode layer 6, a back electric field can be provided, which can prevent electrons with the wrong direction from entering the bottom electrode, reduce the recombination rate at the back surface, thereby increasing the open - circuit voltage. At the same time, it can also act as a reflective film to improve the light absorption of the material. Therefore, the back - side aluminum electrode plays an important role in improving the battery efficiency.

[0038] By providing the positive photoresist protrusion 3 on one side of the light electrode layer 2 and the isolation posts 4 on the light electrode layer 2 respectively, and disposing the perovskite functional layer 5 between the positive photoresist protrusion 3 and the isolation posts 4, the positive photoresist protrusion 3 can limit the current of the perovskite functional layer 5 and protect the edge of the light electrode layer, and the isolation posts can physically divide the perovskite solar cell. By using the positive photoresist protrusion 3, the current of the perovskite functional layer 5 can be limited, and at the same time, the edge of the light electrode layer 3 can be protected, thus preventing short - circuit between the upper and lower electrodes. By providing the isolation posts 4, the back - electrode layer 6 of the perovskite solar cell can be physically divided to form a strip structure, while ensuring the series connection of the previous cell structure and the next cell structure.

[0039] From the above description, it can be seen that the present application achieves the following technical effects:

[0040] In the embodiment of the present application, by adopting the method of adding the positive photoresist protrusion 3 and the isolation posts 4, by providing the positive photoresist protrusion 3 on one side of the light electrode layer 2 and the isolation posts 4 on the light electrode layer 2 respectively, and disposing the perovskite functional layer 5 between the positive photoresist protrusion 3 and the isolation posts 4, the positive photoresist protrusion 3 can limit the current of the perovskite functional layer 5 and protect the edge of the light electrode layer 2, and the isolation posts 4 can physically divide the perovskite solar cell, achieving the purpose of current limiting, protection and physical division, thus realizing the technical effect of improving the performance of the perovskite solar cell, and further solving the technical problems in the current perovskite solar cells. Usually, ITO is used for the transparent light electrode and PET is used for the substrate. Due to the low Tg temperature of PET, ITO thin films are usually prepared at room temperature, and the electrical properties of ITO thin films are poor, affecting the efficiency of perovskite solar cells. In addition, the process route used in the preparation process of perovskite solar cells is relatively complex. Laser etching of patterns is likely to damage the photoanode, resulting in device failure, and the mass - production process is difficult.

[0041] Further, the shape of the positive photoresist protrusion 3 includes but is not limited to: a positive trapezoid. It can achieve good current - limiting and protection effects.

[0042] Further, the shape of the isolation posts 4 includes but is not limited to: an inverted trapezoid or a T - shape. By using organic photoresist to prepare an inverted trapezoid, good forming effects can be ensured. At the same time, the "T" structure can be prepared by an inorganic method through multiple processes as a dividing layer.

[0043] Further, a current - limiting grid layer 7 is provided at the bottom of the substrate 1. It can achieve good current - limiting effects, thus ensuring good forming effects of the perovskite solar cell.

[0044] Furthermore, the back electrode layer 6 is made of a metal material, and the metal material includes but is not limited to: gold, silver, aluminum or copper. This can achieve the effects of being easy to implement and obtain, thereby reducing the processing difficulty.

[0045] As Figure 2 shown, in terms of technology, the present invention also provides a preparation process for a perovskite solar cell, including the following steps:

[0046] Step S101: Prepare the photo - electrode layer 2 on the substrate 1;

[0047] Step S102: Etch the photo - electrode layer 2 through a yellow - light process to prepare a photo - electrode pattern;

[0048] Step S103: Coat a positive photoresist on the patterned photo - electrode layer to prepare a positive - resist protrusion 3 for protection and current limiting;

[0049] Step S104: Coat a negative photoresist above the photo - electrode layer and the positive - resist protrusion to prepare an isolation column 4 for cathode segmentation;

[0050] Step S105: Use an organic printing device or a printing device to prepare each functional layer of perovskite one by one;

[0051] Step S106: Prepare the back electrode layer 6 by thermal evaporation.

[0052] First, before step S101, it also includes: cleaning the substrate 1: ultrasonically cleaning the substrate with detergent, deionized water, acetone and absolute ethanol. The power of ultrasonic cleaning is 50Hz - 100Hz, and the time of ultrasonic cleaning is 5min - 20min. After cleaning, dry it with a nitrogen gun.

[0053] By using the above - mentioned process and producing according to its steps, a perovskite solar cell with good performance can be obtained. The process route adopted by the present invention is simple, has little environmental pollution, and the equipment technology is mature.

[0054] Further, in step S102, the photo - electrode layer is etched by a yellow - light process to prepare a photo - electrode pattern, which specifically includes the following steps: Using a magnetron sputtering device, indium tin oxide (ITO) for the photo - electrode is prepared on a substrate. High - temperature ITO is prepared at 300 - 350°C, and the sheet resistance of the ITO is 10Ω ± 2Ω. The ITO photo - electrode substrate is subjected to AOI inspection and cleaning, and then transferred to a coating device for coating with a positive - type photosensitive photoresist. The film thickness is between 0.1μm and 10μm; preferably, the film thickness is between 0.5μm and 2μm to achieve the best performance effect. It is transferred to an exposure device, and the exposure time is 5s - 10s for exposing the substrate. It is transferred to a developing device, and is sprayed with an alkaline solution. The developing spray time is 60s to remove the unexposed area. Generally, tetramethylammonium hydroxide (TMAH) is used as the organic base, and potassium hydroxide (KOH), sodium hydroxide (NaOH), etc. are used as the inorganic bases. It is transferred to an etching device, and the exposed ITO photo - electrode pattern is etched with a strong acid. It is transferred to a de - gluing device to dissolve the photoresist and then cleaned to prepare a complete photo - electrode pattern. Through the above process steps, a complete photo - electrode pattern can be prepared on the substrate, providing a basis for subsequent processes.

[0055] Further, in step S103, a positive - type photoresist is coated on the patterned photo - electrode layer to prepare positive - type resist protrusions for protection and current limiting, which specifically includes the following steps: The patterned photo - electrode substrate is cleaned. It is transferred to a coating device, and the positive - type photosensitive photoresist is scrape - coated or spin - coated onto the substrate. The film thickness is between 0.5μm and 5μm; preferably, the film thickness is between 1μm and 3μm to achieve the best performance effect. It is transferred to a vacuum baking device for pre - baking the coated substrate. It is transferred to an exposure device, and the exposure time is 5s - 10s for exposing the substrate. It is transferred to a developing device, and is sprayed with an alkaline solution. The developing spray time is 60s to remove the exposed area and then washed with water. It is transferred to a baking device, and the baking temperature and time are 200°C - 280°C and 10 - 30min respectively to cure the positive - type resist of the current - limiting layer on the developed substrate. At least one single or single - group current - limiting layer pattern is distributed on each photo - electrode.

[0056] Further, in step S104, a negative photoresist is coated over the photo-electrode layer and the positive photoresist protrusions to prepare isolation columns for cathode segmentation, which specifically includes the following steps: cleaning the patterned substrate; transferring it to a coating device, and doctor blading or spin-coating a negative photosensitive photoresist onto the substrate, with the film thickness being between 1 μm and 10 μm; preferably, the film thickness is between 3 μm and 5 μm to achieve the best performance effect. Transferring it to a vacuum baking device to pre-bake the substrate with the coated photoresist; transferring it to an exposure device to expose the substrate, with the exposure time being 5 s to 10 s; transferring it to a developing device, spraying with an alkaline solution, with the developing spray time being 60 s to remove the exposed area and performing water washing; transferring it to a baking device, with the baking temperature and time being 200 °C to 280 °C and 10 to 30 min respectively to cure the isolation column photoresist of the developed substrate, and at least one single or single group of isolation column patterns are distributed on each photo-electrode.

[0057] Further, in step S105, an organic printing device or a printing device is used to prepare each functional layer of the perovskite one by one, which specifically includes the following steps: transferring the substrate to the printing device; preparing the electron transport layer, with vacuum baking and a film thickness of 10 - 200 nm; dissolving the material PCBM in chlorobenzene, and obtaining a PCBM solution with a concentration of 20 mg / mL after stirring for 3 h; then, spin-coating the prepared PCBM solution on the surface of the perovskite photoabsorbing layer facing away from the hole transport layer at a rotation speed of 2000 rpm and a rotation time of 45 s to form the electron transport layer with a thickness of 50 nm. Preparing the perovskite absorbing layer, with vacuum baking and annealing, and a film thickness of 200 - 500 nm; preparing the hole transport layer, with vacuum baking and a film thickness of 10 - 200 nm. The hole transport layer is Spiro-OMeTAD or PEDOT:PSS or CuI, with a thickness between 300 - 800 nm, and the hole transport layer is formed by spin-coating or printing a dispersant of the hole transport material on the perovskite photoabsorbing layer and drying it. Among them, as some well-known content in the art, it will not be elaborated in this application.

[0058] Further, in step S106, the back electrode layer 6 is prepared by thermal evaporation, which specifically includes the following steps: transferring the substrate 1 to an evaporation chamber, and using thermal evaporation or E-beam to prepare a back electrode metal thin film with a film thickness ≥ 50 nm. Among them, the vacuum degree of the evaporation chamber is 5 * 10 -4 Pa, and the evaporation rate is 0.1 nm / s.

[0059] The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the specific details in the above embodiments. Within the technical concept of the present invention, various equivalent transformations can be made to the technical solutions of the present invention, and these equivalent transformations all fall within the protection scope of the present invention.

Claims

1. Perovskite solar cell, characterized in that, it includes: a substrate; a photo - electrode layer, which is disposed on the substrate at intervals; a positive - photoresist protrusion, which is disposed at the adjacent junction of the substrate and the photo - electrode layer on the same side and has a gap between it and the adjacent photo - electrode layer; an isolation column, which is disposed on the photo - electrode on the side far from the positive - photoresist protrusion; a perovskite functional layer, which is disposed between the positive - photoresist protrusion and the isolation column; and a back - electrode layer, which fills the space between adjacent isolation columns and covers the substrate, the photo - electrode layer, the positive - photoresist protrusion and the perovskite functional layer, and the back - electrode layer is used to connect series - connected solar cells and serve as the top electrode of the solar cell; by respectively disposing the positive - photoresist protrusion on one side of the photo - electrode layer and the isolation column on the photo - electrode layer, and disposing the perovskite functional layer between the positive - photoresist protrusion and the isolation column, so that the positive - photoresist protrusion restricts the current of the perovskite functional layer and protects the edge of the photo - electrode layer, and the isolation column physically divides the perovskite solar cell; a grid layer for current limiting is disposed at the bottom of the substrate.

2. The perovskite solar cell according to claim 1, characterized in that, the substrate includes: glass, polyimide or PET.

3. The perovskite solar cell according to claim 1, characterized in that, the photo - electrode layer is composed of: ITO, FTO, AZO.

4. The perovskite solar cell according to claim 1, characterized in that, the shape of the positive - photoresist protrusion includes: a regular trapezoid.

5. The perovskite solar cell according to claim 1, characterized in that, the shape of the isolation column includes: an inverted trapezoid or a T - shape.

6. The perovskite solar cell according to claim 1, characterized in that, the isolation column is prepared by using negative photoresist.

7. The perovskite solar cell according to claim 1, characterized in that, the back - electrode layer is made of a metal material, and the metal material includes: gold, silver, aluminum or copper.

8. A preparation process of a perovskite solar cell, characterized in that, it includes the following steps: Step S101, preparing a photo - electrode layer on a substrate; Step S102, etching the photo - electrode layer through a yellow - light process to prepare a photo - electrode pattern; Step S103, coating a positive photoresist on the patterned photo - electrode layer to prepare a positive - photoresist protrusion for protection and current limiting; Step S104, coating a negative photoresist above the photo - electrode layer and the positive - photoresist protrusion, and disposing the isolation column on the photo - electrode on the side far from the positive - photoresist protrusion to prepare an isolation column for cathode segmentation; Step S105, using an organic printing device or a printing device to prepare each perovskite functional layer one by one; Step S106, preparing the back - electrode layer by using thermal evaporation.

9. The preparation process of a perovskite solar cell according to claim 8, characterized in that, Step S102, etching the photo - electrode layer through a yellow - light process to prepare a photo - electrode pattern, specifically including the following steps: Using a magnetron sputtering device, prepare a photoelectrode ITO on a substrate. Prepare high-temperature ITO at 300 - 350 °C, and the sheet resistance of ITO is 10 Ω ± 2 Ω; Conduct AOI inspection and cleaning on the photoelectrode ITO substrate, and transfer it to a coating device to coat a positive photosensitive photoresist. The film thickness is between 0.1 μm and 10 μm; Transfer it to an exposure device to expose the substrate; Transfer it to a developing device and spray with an alkaline solution to remove the unexposed area; Transfer it to an etching device and etch the exposed photoelectrode ITO pattern with a strong acid; Transfer it to a degluing device to dissolve the photoresist and conduct cleaning to prepare a complete photoelectrode pattern.

10. According to the perovskite solar cell preparation process described in claim 8, It is characterized in that, In step S103, coat a positive photoresist on the patterned photoelectrode layer to prepare positive glue protrusions for protection and current limiting, which specifically includes the following steps: Clean the patterned photoelectrode substrate; Transfer it to a coating device and scrape or spin-coat the positive photosensitive photoresist onto the substrate. The film thickness is between 0.5 μm and 5 μm; Transfer it to a vacuum baking device to pre-bake the substrate coated with glue; Transfer it to an exposure device to expose the substrate; Transfer it to a developing device and spray with an alkaline solution to remove the exposed area and conduct water washing; Transfer it to a baking device to cure the positive glue on the developed substrate. At least one single or single group of positive glue protrusion patterns is distributed on each photoelectrode.

11. According to the perovskite solar cell preparation process described in claim 8, It is characterized in that, In step S104, coat a negative photoresist above the photoelectrode layer and the positive glue protrusions to prepare isolation columns for cathode segmentation, which specifically includes the following steps: Clean the patterned substrate; Transfer it to a coating device and scrape or spin-coat the negative photosensitive photoresist onto the substrate. The film thickness is between 1 μm and 10 μm; Transfer it to a vacuum baking device to pre-bake the substrate coated with glue; Transfer it to an exposure device to expose the substrate; Transfer it to a developing device and spray with an alkaline solution to remove the exposed area and conduct water washing; Transfer it to a baking device to cure the isolation column glue on the developed substrate. At least one single or single group of isolation column patterns is distributed on each photoelectrode.

12. According to the perovskite solar cell preparation process described in claim 8, It is characterized in that, In step S105, use an organic printing device or a printing device to prepare each functional layer of perovskite one by one, which specifically includes the following steps: Transfer the substrate to a printing device; Prepare an electron transport layer, conduct vacuum baking, and the film thickness is 10 - 200 nm; Prepare a perovskite absorption layer, conduct vacuum baking and annealing, and the film thickness is 200 - 500 nm; Prepare a hole transport layer, conduct vacuum baking, and the film thickness is 10 - 200 nm.

13. According to the perovskite solar cell preparation process described in claim 8, It is characterized in that, In step S106, prepare a back electrode layer by thermal evaporation method, which specifically includes the following steps: Transfer the substrate to the evaporation chamber and prepare the back electrode metal thin film by thermal evaporation or E-beam evaporation, with the film thickness ≥ 50 nm.

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