Method and device for calculating semiconductor area, electronic equipment and storage medium

Abstract

The application discloses a semiconductor area calculation method and device, electronic equipment and storage medium, and relates to the technical field of semiconductors. The semiconductor area calculation method comprises the following steps: obtaining the target current of a target semiconductor according to a reference data set and a target voltage required by the target semiconductor, wherein the preset reference set is a data set obtained according to a preset reference semiconductor, and the reference semiconductor is a semiconductor with the same voltage level and manufacturing process as the target semiconductor. The current density of the target semiconductor is calculated according to the target current and a preset reference area. The target active area of the target semiconductor is calculated according to the current density of the target semiconductor and a preset rated current. Finally, the target area required by the target semiconductor is determined according to the target active area. The semiconductor area calculation method improves the design accuracy of the semiconductor area by using the preset reference set to calculate the area of the target semiconductor.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular to a semiconductor area calculation method and device, electronic equipment and storage medium. BACKGROUND

[0002] At present, semiconductor devices such as silicon carbide diodes need to be designed in area before production to ensure that the semiconductor devices meet the required performance. Among them, when the area of the semiconductor device is too small, the positive voltage borne by the semiconductor device will be too high, thereby affecting the performance of the semiconductor device; when the area of the semiconductor device is too large, the production cost of the product will increase.

[0003] In related technologies, the area design of semiconductor devices has the problem of poor accuracy. SUMMARY

[0004] The present application aims to at least solve one of the technical problems in the prior art. To this end, the present application provides a semiconductor area calculation method, which can improve the design accuracy of the semiconductor area.

[0005] The present application also provides a semiconductor area calculation device, and an electronic equipment and a computer readable storage medium applying the above semiconductor area calculation method.

[0006] The semiconductor area calculation method according to the first aspect of the present application comprises:

[0007] According to the target voltage and the preset reference set, the target current of the target semiconductor is obtained; wherein the preset reference set is a data set obtained according to a preset reference semiconductor, and the reference semiconductor is a semiconductor with the same voltage level and manufacturing process as the target semiconductor;

[0008] According to the target current and the preset reference active area, the current density of the target semiconductor is calculated;

[0009] According to the current density and the preset rated current, the target active area of the target semiconductor is calculated;

[0010] According to the target active area, the target area is calculated.

[0011] According to the semiconductor area calculation method, the target current of the target semiconductor is obtained according to the reference data set and the target voltage required by the target semiconductor. The current density of the target semiconductor is calculated according to the target current and the preset reference area, and the target active area of the target semiconductor is calculated according to the current density of the target semiconductor and the preset rated current. Finally, the target area required by the target semiconductor is determined according to the target active area. The semiconductor area calculation method of the embodiment improves the design accuracy of the semiconductor area by using the preset reference set to calculate the area of the target semiconductor.

[0012] According to some embodiments of the present application, before the target current is obtained according to the preset target voltage and the preset reference set, the semiconductor area calculation method further comprises: constructing the preset reference set, specifically comprising:

[0013] Obtaining the reference current of the reference semiconductor under the reference voltage;

[0014] Constructing the preset reference set according to the reference voltage and the reference current.

[0015] According to some embodiments of the present application, before the current density of the target semiconductor is calculated according to the target current and the preset reference active area, the semiconductor area calculation method further comprises: obtaining the reference active area, specifically comprising:

[0016] Obtaining the reference length value, the reference width value and the reference corner radius of the active area of the reference semiconductor;

[0017] Calculating the reference active area according to the reference length value, the reference width value and the reference corner radius.

[0018] According to some embodiments of the present application, the target area is calculated according to the target active area, comprising:

[0019] Calculating active area data according to the target active area and a preset target width-length ratio;

[0020] Calculating target side length data according to the active area data and a preset terminal area width value;

[0021] Calculating the target area according to the target side length data.

[0022] According to some embodiments of the present application, the active area data comprises an active area length value and an active area width value, the target side length data comprises a target length value and a target width value, and the target side length data is calculated according to the active area data and the preset terminal area width value, comprising:

[0023] The target length value is calculated according to the active region length value and the terminal region width value, and the target width value is calculated according to the active region width value and the terminal region width value.

[0024] The semiconductor area calculation device according to the second aspect of the present application comprises:

[0025] A target current acquisition module is configured to acquire a target current of a target semiconductor according to a preset target voltage and a preset reference set, wherein the preset reference set is a data set obtained according to a preset reference semiconductor, and the reference semiconductor is a semiconductor with the same voltage level and manufacturing process as the target semiconductor.

[0026] A current density acquisition module is configured to acquire a current density of the target semiconductor according to the target current and a preset reference active region area.

[0027] An active region area acquisition module is configured to acquire an active region area of the target semiconductor according to the current density and a preset rated current.

[0028] A target area acquisition module is configured to acquire a target area according to the target active region area.

[0029] The semiconductor area calculation device according to the present application has at least the following beneficial effects: by using the above semiconductor area calculation method, the area of the target semiconductor is calculated by using the preset reference set, thereby improving the design accuracy of the semiconductor area.

[0030] The electronic device according to the third aspect of the present application comprises:

[0031] At least one memory;

[0032] At least one processor;

[0033] At least one computer program;

[0034] The computer program is stored in the memory, and the processor executes the at least one computer program to implement the semiconductor area calculation method of the first aspect of the present application.

[0035] The computer readable storage medium according to the fourth aspect of the present application comprises:

[0036] The computer readable storage medium stores computer executable instructions for causing a computer to execute the semiconductor area calculation method of the first aspect of the present application.

[0037] Additional aspects and advantages of the present application will be given in part in the following description, become apparent from the following description, or be learned by the practice of the application. BRIEF DESCRIPTION OF DRAWINGS

[0038] The application will be further described below in conjunction with the drawings and embodiments, wherein:

[0039] Figure 1 A flow chart of the method for calculating the semiconductor area provided in the embodiments of the present application;

[0040] Figure 2 A flow chart of the specific method for constructing the preset reference set in the embodiments of the present application;

[0041] Figure 3 A curve diagram of the preset reference set in the embodiments of the present application;

[0042] Figure 4 A flow chart of the specific method for obtaining the area of the active region in the embodiments of the present application;

[0043] Figure 5 A schematic diagram of the active region of the reference semiconductor in the embodiments of the present application;

[0044] Figure 6 A flow chart of the specific method for constructing the preset reference set in the embodiments of the present application; Figure 1 A flow chart of the specific method for constructing the preset reference set in the embodiments of the present application;

[0045] Figure 7 A module block diagram of the semiconductor area calculation device provided in the embodiments of the present application;

[0046] Figure 8 A hardware structure schematic diagram of the electronic device provided in the embodiments of the present application.

[0047] Reference Signs:

[0048] Target current acquisition module 100, current density acquisition module 200, active region area acquisition module 300, target area acquisition module 400, processor 510, memory 520, input / output interface 530, communication interface 540, bus 550. DETAILED DESCRIPTION

[0049] The embodiments of the present application will be described in detail below, examples of which are shown in the drawings, wherein the same or similar reference signs represent the same or similar elements or elements with the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary, only for explaining the present application, and cannot be understood as limiting the present application.

[0050] In the description of the present application, it should be understood that the orientation description, such as the orientation or position relationship indicated by the upper, lower, front, rear, left, right and the like, is based on the orientation or position relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.

[0051] In the description of the present application, if the meaning of several is more than one, the meaning of multiple is more than two, greater than, less than, more than and the like are understood as not including the number, above, below, within and the like are understood as including the number. If it is described as first, second, it is only for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or the order of technical features indicated.

[0052] In the description of the present application, unless otherwise explicitly limited, the words such as setting, installing, connecting and the like should be broadly understood, and the person skilled in the art can reasonably determine the specific meaning of the above words in the present application in combination with the specific content of the technical scheme.

[0053] In the description of the present application, the description of the reference terms "one embodiment", "some embodiments", "exemplary embodiment", "example", "specific example" or "some examples" means that the specific features, structures, materials or characteristics described in combination with the embodiment or example are included in at least one embodiment or example of the present application. In the specification, the exemplary description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0054] It should be noted that in the following embodiments, silicon carbide diodes are taken as reference semiconductors and target semiconductors for example. However, it should be understood that other semiconductors having the same function as the silicon carbide diode also belong to the protection scope of the embodiments of the present application. In the description of the present application, the silicon carbide diode includes an active region and a termination region, wherein, since the semiconductor required by the embodiments of the present application does not need to change the withstand voltage performance, the width value of the termination region is a fixed value.

[0055] As shown in FIG. 1, Figure 1 The embodiments of the present application provide a semiconductor area calculation method, which includes but is not limited to steps S100 to S400.

[0056] Step S100: obtaining a target current of a target semiconductor according to a preset target voltage and a preset reference set, wherein the preset reference set is a data set obtained according to a preset reference semiconductor, and the reference semiconductor is a semiconductor with the same voltage level and manufacturing process as the target semiconductor.

[0057] Specifically, the reference semiconductor is a finished semiconductor whose performance meets the accuracy after inspection. The target semiconductor is a semiconductor to be developed with the same voltage level and manufacturing process as the reference semiconductor, but different rated current and / or forward voltage drop. The preset reference set is a data set obtained according to a preset reference semiconductor, and the preset reference set includes a forward characteristic curve measured according to the reference semiconductor. The voltage level of the semiconductor is the classification of the blocking voltage of the semiconductor, wherein the blocking voltage of the semiconductor can be classified into voltage levels of 650V, 1200V, 1700V, etc. to facilitate the standardization of the specifications of the semiconductor. For example, in actual application, a semiconductor with a voltage of 500V is needed, and a semiconductor with a voltage level of 650V is selected. The manufacturing process of the semiconductor is a process for obtaining a PN junction by using doping compensation, etc. to manufacture the semiconductor, for example, the manufacturing process can include alloying method, electrical formation method or planar diffusion method, etc.

[0058] The preset target voltage is the forward voltage required by the target semiconductor. Since the voltage level and manufacturing process of the reference semiconductor are the same as those of the target semiconductor, the preset reference set of the reference semiconductor can be applied to the target semiconductor, that is, the forward characteristic curve of the target semiconductor is the same as that of the reference semiconductor, so that the preset reference set can be used for calculation when calculating the forward current of the target semiconductor. The target current corresponding to the target voltage is selected from the preset reference set, and the target current is the forward current of the target semiconductor.

[0059] Step S200: calculating the current density of the target semiconductor according to the target current and a preset reference active area.

[0060] Specifically, the preset reference active area is the active area of the reference semiconductor, and the current density of the target semiconductor can be calculated by the target current and the reference active area. The calculation formula of the current density of the target semiconductor is as follows (1):

[0061] Jb = IF / A …… Equation (1)

[0062] Wherein, Jb is the current density, IF is the target current, and A is the reference area.

[0063] Step S300: calculating the target active area of the target semiconductor according to the current density and a preset rated current.

[0064] Specifically, the preset rated current is a rated current of the target semiconductor, and the target active area is an active area of the target semiconductor. The target active area of the target semiconductor can be calculated by the rated current and the current density. The target active area calculation formula is as follows:

[0065] Ab = IFb / Jb (2)

[0066] Wherein, Ab is the target active area, IFb is the rated current, and Jb is the current density.

[0067] Step S400: The target active area is calculated to obtain a target area.

[0068] Specifically, after obtaining the target active area, the target area required by the target semiconductor can be determined according to the target active area.

[0069] According to the semiconductor area calculation method of the embodiment of the present application, the target current of the target semiconductor is obtained according to the reference data set and the target voltage required by the target semiconductor. The current density of the target semiconductor is calculated according to the target current and the preset reference area, and the target active area of the target semiconductor is calculated according to the current density of the target semiconductor and the preset rated current. Finally, the target area required by the target semiconductor is determined according to the target active area. The semiconductor area calculation method of the embodiment improves the design accuracy of the semiconductor area by using the preset reference set to calculate the area of the target semiconductor.

[0070] As shown in Figure 2 In some embodiments of the present application, before step S100, the semiconductor area calculation method further comprises: constructing a preset reference set, specifically including but not limited to step S110 and step S120.

[0071] Step S110: Obtain the reference current of the reference semiconductor under the reference voltage.

[0072] Specifically, the reference voltage is a forward voltage applied to the reference semiconductor. After applying the reference voltage to the reference semiconductor, the reference current flowing through the reference semiconductor is measured, and multiple sets of reference voltages and corresponding reference currents are recorded.

[0073] Step S120: Construct a preset reference set according to the reference voltage and the reference current.

[0074] Specifically, the preset reference set is constructed according to the recorded multiple sets of reference voltages and corresponding reference currents. The preset reference set can refer to the forward characteristic curve as shown in Figure 3 Figure 3 ​Forward characteristic curve, where the abscissa is the reference voltage (VF) and the ordinate is the reference current (IF). The forward characteristic curve in the figure is a continuous curve. It can be seen from the figure that when the forward voltage applied to the reference semiconductor is small, the forward current is almost zero. When the forward voltage applied to the semiconductor is greater than Von, the forward current increases significantly.

[0075] The forward characteristic curve of the target semiconductor is the same as that of the reference semiconductor, so that the preset reference set can be used to calculate the forward current of the target semiconductor. For example, when the forward voltage VF (i.e., the target voltage) required by the target semiconductor is 1.35V, the first reference group in the preset reference set is taken: VF1 = 1.3419V, IF1 = 12.5395A, and the second reference group: VF2 = 1.3659V, IF2 = 13.324A. Where, VF1 < VF < VF2, and. Thus, the target current IF can be calculated by the linear interpolation method, and the specific calculation formula is the following formula (3):

[0076] IF = IF1 + (VF - VF1) * (VF2 - VF1).............. Formula (3)

[0077] Substitute VF1 = 1.3419V, IF1 = 12.5395A, VF2 = 1.3659V, and IF2 = 13.324A into the above formula (3), and then IF = 12.8043A can be obtained.

[0078] As Figure 4 shown, in some embodiments of the present invention, before step S200, the calculation method of the semiconductor area further includes: obtaining the reference active area area, specifically including but not limited to steps S210 and step S220.

[0079] Step S210: Obtain the reference length value, reference width value, and reference fillet radius of the reference semiconductor active area.

[0080] Specifically, refer to Figure 5 the schematic diagram of the active area of the reference semiconductor, where L is the reference length value, W is the reference width value, and r is the reference fillet radius. The reference length value, reference width value, and reference fillet radius of the reference semiconductor active area can all be obtained by measuring with instruments such as an ellipsometric interference light spectrometer. It can be understood that the specific measurement methods of the reference length value, reference width value, and reference fillet radius can be adaptively selected according to actual needs.

[0081] Step S220: Calculate the reference active area area according to the reference length value, reference width value, and reference fillet radius.

[0082] Specifically, the reference active area is calculated by the obtained reference length value, the reference width value and the reference corner radius. The reference area calculation formula of the reference active area is formula (4) as follows:

[0083] A = (L*W) - 4(r 2 -π*r 2 / 4) …… formula (4)

[0084] Wherein, A is the reference area, L is the reference length value, W is the reference width value, and r is the reference corner radius.

[0085] As Figure 6 shown, in some embodiments of the present application, the step S400 includes but is not limited to steps S410 to S440.

[0086] Step S410: calculating the active area data according to the preset target width-length ratio and the target active area.

[0087] Specifically, the preset target width-length ratio is the ratio of the length and width required by the target semiconductor. The active area data is calculated by the target width-length ratio and the obtained target active area. The active area data is the side length data of the active area in the target semiconductor.

[0088] Step S420: calculating the target side length data according to the active area data and the preset terminal area width value.

[0089] Specifically, the preset terminal area width value is the width value of the terminal area in the target semiconductor. After obtaining the active area data, the target side length data is calculated according to the active area data and the terminal area width value. The target side length data is the side length data of the target semiconductor. The calculation formula of the target side length data is formula (5) as follows:

[0090] Ab = (Lb*Wb) - 4(r 2 -π*r 2 / 4) …… formula (5)

[0091] Wherein, Lb and Wb are the target side length data, Ab is the target active area, r is the reference corner radius, and k is the target width-length ratio, which is k = Wb / Lb.

[0092] Step S430: calculating the target area according to the target side length data.

[0093] Specifically, after obtaining the target side length data, the target area required by the target semiconductor is calculated according to the target side length data.

[0094] In some embodiments of the present application, the active region data includes an active region length value and an active region width value, the target edge length data includes a target length value and a target width value, and step S420 includes but is not limited to step S421.

[0095] Step S421: calculating the target length value according to the active region length value and the terminal region width value, and calculating the target width value according to the active region width value and the terminal region width value.

[0096] Specifically, substituting the target width-length ratio k = Wb / Lb and Wb = k*Lb into the above formula (5), the following formula (6) and formula (7) can be obtained:

[0097]

[0098] Wb = k*Lb …… formula (7)

[0099] Wherein, Lb is the active region length value, Wb is the active region width value, Ab is the target active region area, r is the reference round corner radius, and k is the target width-length ratio.

[0100] After obtaining the active region length value and the active region width value, the target length value and the target width value can be calculated in combination with the terminal region width value. The specific calculation formula is the following formula (8) and formula (9):

[0101] Lchip = Lb + Wtrm*2 …… formula (8)

[0102] Wchip = Wb + Wtrm*2 …… formula (9)

[0103] Wherein, Lchip is the target length value, Wchip is the target width value, Lb is the active region length value, Wb is the active region width value, and Wtrm is the terminal region width value. The target length value and the target width value are multiplied to calculate the target area.

[0104] As shown in FIG. 1, Figure 7 The present application also provides a semiconductor area calculation device, which includes:

[0105] A target current acquisition module 100 is configured to obtain a target current of a target semiconductor according to a preset target voltage and a preset reference set, wherein the preset reference set is a data set obtained according to a preset reference semiconductor, and the reference semiconductor is a semiconductor with the same voltage level and manufacturing process as the target semiconductor.

[0106] A current density acquisition module 200 is configured to obtain a current density of the target semiconductor according to the target current and a preset reference active region area.

[0107] The active area acquisition module 300 is configured to calculate the active area of the target semiconductor according to the current density and the preset rated current.

[0108] The target area acquisition module 400 is configured to calculate the target area according to the target active area.

[0109] It can be seen that the content in the above semiconductor area calculation method embodiments is applicable to the semiconductor area calculation device embodiments, the semiconductor area calculation device embodiments specifically realize the same functions as the semiconductor area calculation method embodiments, and achieve the same beneficial effects as the semiconductor area calculation method embodiments.

[0110] The embodiments of the present application also provide an electronic device, which comprises at least one memory, at least one processor, and at least one computer program; the computer program is stored in the memory, and the processor executes the at least one computer program to implement the semiconductor area calculation method as described in any of the above embodiments.

[0111] It can be seen that the content in the above semiconductor area calculation method embodiments is applicable to the electronic device embodiments, the electronic device embodiments specifically realize the same functions as the semiconductor area calculation method embodiments, and achieve the same beneficial effects as the semiconductor area calculation method embodiments.

[0112] The following will be described in detail Figure 8 The electronic device of the embodiments of the present application is described in detail.

[0113] As Figure 8 , Figure 8 The hardware structure of the electronic device of another embodiment is illustrated, and the electronic device comprises:

[0114] The processor 510 can be implemented in a general-purpose central processing unit (CPU), a microprocessor, an application specific integrated circuit (ASIC), or one or more integrated circuits, and is configured to execute related programs to implement the technical solutions provided by the embodiments of the present application.

[0115] The memory 520 can be implemented in the form of a read only memory (ROM), a static storage device, a dynamic storage device, or a random access memory (RAM), etc. The memory 520 can store an operating system and other application programs, and when the technical solutions provided by the embodiments of the present disclosure are implemented by software or firmware, the related program codes are stored in the memory 520 and are called and executed by the processor 510 to perform the semiconductor area calculation method of the embodiments of the present disclosure;

[0116] The input / output interface 530 is configured to realize information input and output.

[0117] The communication interface 540 is configured to realize the communication interaction between the device and other devices, and the communication can be realized by a wired manner (for example, a USB, a network cable, etc.) or a wireless manner (for example, a mobile network, WIFI, Bluetooth, etc.).

[0118] The bus 550 is configured to transmit information between various components (for example, the processor 510, the memory 520, the input / output interface 530, and the communication interface 540) of the device.

[0119] The processor 510, the memory 520, the input / output interface 530, and the communication interface 540 are connected to each other through the bus 550 to realize the communication connection between the devices.

[0120] The embodiments of the present disclosure also provide a computer readable storage medium, which stores computer executable instructions, and the computer executable instructions are configured to make a computer execute the semiconductor area calculation method described in any of the above embodiments.

[0121] It can be seen that the contents in the semiconductor area calculation method embodiments described above are all applicable to the present computer readable storage medium embodiment, the functions realized by the present computer readable storage medium embodiment are the same as those of the semiconductor area calculation method embodiments described above, and the beneficial effects achieved by the present computer readable storage medium embodiment are also the same as those achieved by the semiconductor area calculation method embodiments described above.

[0122] The device embodiments described above are only schematic, and the units described as separate components can or can not be physically separate, that is, can be located in one place, or can be distributed on multiple network units. According to actual needs, part or all of the modules can be selected to realize the purposes of the present embodiment solutions.

[0123] Those skilled in the art can understand that all or some of the steps in the above disclosed method, the functions of the modules / units in the system, the device, and the equipment can be implemented as software, firmware, hardware, and appropriate combinations thereof.

[0124] The terms "first", "second", "third", "fourth" and the like in the description and in the claims of this patent application, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the use of these terms herein is to be construed to cover the embodiments of the application described herein as well as other embodiments that can be made without departing from the spirit and the scope of the application. Furthermore, the terms "comprising", "including", "containing", and "having" and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, product or apparatus that comprises, includes, contains or has a list of steps or elements can not necessarily be limited to those steps or elements, but can include additional steps or elements not expressly listed or inherent to such process, method, system, product or apparatus.

[0125] It should be understood that, in the application, "at least one" means one or more, and "multiple" means two or more. "And / or" is used to describe the relationship between associated objects, which means that there can be three relationships, for example, "A and / or B" can mean: only A, only B, and A and B exist at the same time, where A and B can be singular or plural. The character " / " generally represents an "or" relationship between the associated objects. "At least one of the following" or similar expressions means any combination of these items, including any combination of single or multiple items. For example, at least one of a, b or c can mean: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, and c can be single or multiple.

[0126] In several embodiments provided by the application, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are only illustrative, for example, the division of units is only a logical function division, and actual implementation can have another division manner, for example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. In addition, the coupling or direct coupling or communication connection between the displayed or discussed objects can be indirect coupling or communication connection through some interfaces, devices or units, which can be electrical, mechanical or other forms.

[0127] The units described as separate components can or can not be physically separated, and the components shown as units can or can not be physical units, that is, they can be located in one place, or they can be distributed on multiple network units. According to actual needs, some or all of the units can be selected to achieve the purpose of the embodiment of the application.

[0128] In addition, each function unit in each embodiment of the present application can be integrated in one processing unit, or each unit can be physically present separately, or two or more units can be integrated in one unit. The integrated unit can be realized in the form of hardware or in the form of a software function unit.

[0129] If the integrated unit is realized in the form of a software function unit and sold or used as an independent product, it can be stored in a computer readable storage medium. Based on such understanding, the technical solutions of the present application, essentially or the part that contributes to the prior art, or all or part of the technical solutions can be embodied in the form of a software product. The computer software product is stored in a storage medium, and includes multiple instructions for causing an electronic device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the methods of the embodiments of the present application. The aforementioned storage medium includes various media that can store program codes, such as a U disk, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.

[0130] The embodiments of the present application are described in detail above in combination with the drawings, but the present application is not limited to the above embodiments. Within the scope of knowledge possessed by a person skilled in the art, various changes can be made without departing from the gist of the present application. In addition, the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

Claims

1. A method for calculating semiconductor area, characterized in that, include: The target current of the target semiconductor is obtained based on a preset target voltage and a preset reference set; wherein, the preset reference set is a dataset obtained based on a preset reference semiconductor, and the reference semiconductor is a semiconductor with the same voltage level and manufacturing process as the target semiconductor; Obtaining a preset reference active region area includes: obtaining a reference length value, a reference width value, and a reference fillet radius of the reference semiconductor active region, and calculating the reference active region area based on the reference length value, the reference width value, and the reference fillet radius; The current density of the target semiconductor is calculated based on the target current and the area of ​​the reference active region. The target active region area of ​​the target semiconductor is calculated based on the current density and the preset rated current. The target area is calculated based on the area of ​​the target active region. The step of calculating the target area based on the target active area area includes: calculating active area data based on a preset target aspect ratio and the target active area area; calculating target side length data based on the active area data and a preset terminal area width value; and calculating the target area based on the target side length data.

2. The method for calculating semiconductor area according to claim 1, characterized in that, Before obtaining the target current based on the preset target voltage and preset reference set, the method for calculating the semiconductor area further includes: constructing the preset reference set, specifically including: Obtain the reference current of the reference semiconductor at the reference voltage; The preset reference set is constructed based on the reference voltage and the reference current.

3. The method for calculating semiconductor area according to claim 1, characterized in that, The active region data includes: an active region length value and an active region width value; the target side length data includes: a target length value and a target width value; the calculation of the target side length data based on the active region data and a preset terminal region width value includes: The target length value is calculated based on the active region length value and the terminal region width value, and the target width value is calculated based on the active region width value and the terminal region width value.

4. A device for calculating semiconductor area, characterized in that, include: A target current acquisition module is used to obtain the target current of a target semiconductor based on a preset target voltage and a preset reference set; wherein, the preset reference set is a dataset obtained based on a preset reference semiconductor, and the reference semiconductor is a semiconductor with the same voltage level and manufacturing process as the target semiconductor; A current density acquisition module is used to acquire a preset reference active region area and to calculate the current density of the target semiconductor based on the target current and the preset reference active region area; wherein, acquiring the preset reference active region area includes: acquiring a reference length value, a reference width value, and a reference fillet radius of the active region of the reference semiconductor, and calculating the reference active region area based on the reference length value, the reference width value, and the reference fillet radius; An active region area acquisition module is used to calculate the active region area of ​​the target semiconductor based on the current density and a preset rated current. A target area acquisition module is used to calculate a target area based on the target active area area. The calculation of the target area based on the target active area area includes: calculating active area data based on a preset target aspect ratio and the target active area area; calculating target side length data based on the active area data and a preset terminal area width value; and calculating the target area based on the target side length data.

5. An electronic device, characterized in that, include: At least one memory; At least one processor; At least one computer program; The computer program is stored in the memory, and the processor executes the at least one computer program to implement the method for calculating the semiconductor area as described in any one of claims 1 to 3.

6. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer-executable instructions for causing a computer to perform the method for calculating the semiconductor area as described in any one of claims 1 to 3.

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