Laser module, semiconductor laser array package assembly, and semiconductor laser

Abstract

The application discloses a laser module, a semiconductor laser array packaging assembly and a semiconductor laser. The laser module comprises a substrate, a positive conductor layer and a negative conductor layer which are arranged on the substrate, a laser chip arranged on the positive conductor layer, and a gold wire, one end of which is connected to the laser chip and the other end of which is connected to the negative conductor layer. In the laser module, the structure is simple and easy to assemble, batch production and testing, and subsequent high-power array packaging arrangement of multiple laser modules is facilitated, so that high-power density and high-reliability semiconductor lasers can be produced in batches.

Description

Technical Field

[0001] This application relates to the field of semiconductor laser technology, and in particular to a laser module, a semiconductor laser array packaging component, and a semiconductor laser. Background Technology

[0002] With the widespread application of high-power semiconductor lasers in many fields such as additive manufacturing, metal welding, and cutting, the market demand for high-power semiconductor lasers is also increasing year by year.

[0003] However, high-power semiconductor lasers on the market generally suffer from problems such as high cost, low reliability, and complex manufacturing processes. Summary of the Invention

[0004] This application provides a laser module, a semiconductor laser array packaging component, and a semiconductor laser, which can solve the problems of high cost, low reliability, and complex process that are common in high-power semiconductor lasers in the prior art.

[0005] To solve the above-mentioned technical problems, one technical solution adopted in this application is: to provide a laser module, wherein the laser module includes: a substrate; a positive conductor layer and a negative conductor layer, which are disposed on the substrate at intervals; a laser chip, which is disposed on the positive conductor layer; and a gold wire, one end of which is connected to the laser chip and the other end of which is connected to the negative conductor layer.

[0006] In this case, the edge of the laser chip away from the negative conductor layer is flush with the edge of the substrate.

[0007] The length of the positive electrode conductor layer in the first direction is greater than the length of the laser chip in the first direction, and the length of the positive electrode conductor layer in the second direction is greater than or equal to twice the length of the laser chip in the second direction; wherein, the first direction is perpendicular to the edge of the laser chip away from the negative electrode conductor layer, and the second direction is perpendicular to the first direction.

[0008] To solve the above-mentioned technical problems, another technical solution adopted in this application is: to provide a semiconductor laser array packaging component, wherein the semiconductor laser array packaging component includes: a plurality of laser modules; a heat sink having a plurality of stepped steps, each step having at least one laser module; wherein the laser module is any of the laser modules described above.

[0009] The semiconductor laser array packaging assembly also includes a positive electrode connector, a negative electrode connector, and a first connecting gold wire. One end of the positive electrode connector is used to connect to the positive terminal of an external power supply, and the other end is connected to the positive conductor layer of the first laser module closest to the positive electrode connector among multiple laser modules. One end of the negative electrode connector is used to connect to the negative terminal of the power supply, and the other end is connected to the negative conductor layer of the second laser module closest to the negative electrode connector among multiple laser modules. The first connecting gold wire sequentially connects the positive conductor layer of one of each pair of adjacent laser modules to the negative conductor layer of the other, so as to realize the series connection between the positive electrode connector, the negative electrode connector, and each laser module.

[0010] The semiconductor laser array packaging assembly also includes a second connecting gold wire and a third connecting gold wire. One end of the second connecting gold wire is connected to the positive electrode inlet connector, and the other end is connected to the positive electrode conductor layer of the first laser module. One end of the third connecting gold wire is connected to the negative electrode inlet connector, and the other end is connected to the negative electrode conductor layer of the second laser module.

[0011] The positive electrode inlet connector includes a first positive electrode inlet connector and a second positive electrode inlet connector. The first positive electrode inlet connector and the second positive electrode inlet connector are respectively connected to the opposite ends of the step where the first laser module is located, and both extend along a third direction; wherein, the third direction is the extension direction of the first laser module; the negative electrode inlet connector includes a first negative electrode inlet connector and a second negative electrode inlet connector. The first negative electrode inlet connector and the second negative electrode inlet connector are respectively connected to the opposite ends of the step where the second laser module is located, and both extend along a third direction.

[0012] The positive electrode inlet connector includes a first connecting portion and a first extension portion. The two ends of the first connecting portion are respectively connected to the two ends of the positive electrode conductor layer of the first laser module. One end of the first extension portion is connected to one end of the first connecting portion, and the other end is wrapped around to the side of the heat sink away from the multiple laser modules and extended along a fourth direction. The fourth direction is perpendicular to the extension direction of the first laser module. The negative electrode inlet connector includes a second connecting portion and a second extension portion. The two ends of the second connecting portion are respectively connected to the two ends of the negative electrode conductor layer of the second laser module. One end of the second extension portion is connected to one end of the second connecting portion, and the other end is extended along the fourth direction so that the other end of the second extension portion and the other end of the first extension portion are on the same straight line.

[0013] The semiconductor laser array packaging assembly also includes a packaging cover, which is located on the side of the heat sink away from the multiple laser modules. The packaging cover is also provided with liquid inlet and liquid outlet holes, and cooperates with the heat sink to form a heat dissipation channel. The heat dissipation channel corresponds to at least multiple step positions and is used to dissipate heat from the multiple laser modules.

[0014] To solve the above-mentioned technical problems, another technical solution adopted in this application is: to provide a semiconductor laser, wherein the semiconductor laser includes: a semiconductor laser array packaging component and an optical component array, the optical component array being used to shape the laser beam emitted by multiple laser modules; wherein the semiconductor laser array packaging component is the semiconductor laser array packaging component as described above.

[0015] The beneficial effects of this application are as follows: Unlike the prior art, the positive electrode conductor layer and the negative electrode conductor layer in the laser module provided by this application are disposed alternately on its substrate, and the laser chip is further disposed on the positive electrode conductor layer. One end of the gold wire is connected to the laser chip, and the other end is connected to the negative electrode conductor layer. This makes the resulting laser module structure simple and easy to assemble, easy to mass-produce and test, and also convenient for subsequent high-power array packaging and arrangement of multiple laser modules, thereby enabling mass production of high-power density and high-reliability semiconductor lasers. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of one embodiment of the laser module of this application;

[0017] Figure 2 This is a schematic diagram of the structure of the first embodiment of the semiconductor laser array packaging component of this application;

[0018] Figure 3 This is a schematic diagram of the second embodiment of the semiconductor laser array packaging component of this application;

[0019] Figure 4 yes Figure 3 Rear view of a semiconductor laser array package assembly;

[0020] Figure 5 This is a schematic diagram of one embodiment of the semiconductor laser of this application. Detailed Implementation

[0021] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0022] The terms "first," "second," and "third" in this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationships and movements between components in a specific orientation (as shown in the figures). If the specific orientation changes, the directional indications also change accordingly. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0023] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0024] The present application will now be described in detail with reference to the accompanying drawings and embodiments.

[0025] Please see Figure 1 , Figure 1 This is a schematic diagram of one embodiment of the laser module of this application. In this embodiment, the laser module 10 specifically includes: a substrate 11, a positive electrode conductor layer 12, a negative electrode conductor layer 13, a laser chip 14, and gold wires 15.

[0026] Specifically, the laser module 10 provided in this application is used in a semiconductor laser. Multiple laser modules 10 are arranged in any reasonable array packaging method to form a semiconductor laser array package component, and cooperate with the corresponding optical component array to emit a laser beam.

[0027] Specifically, the positive electrode conductor layer 12 and the negative electrode conductor layer 13 are disposed on the substrate 11 at intervals, so that the substrate 11 provides a certain degree of strength support.

[0028] The laser chip 14 is further disposed on the positive conductor layer 12, and one end of the gold wire 15 is connected to the laser chip 14, and the other end is connected to the negative conductor layer 13.

[0029] It is understandable that the positive conductor layer 12 and the negative conductor layer 13 can be connected to the positive and negative terminals of a power supply, or the negative conductor layer 13 and the positive conductor layer 12 in another laser module 10, so as to supply power to the laser chip 14 through the positive conductor layer 12 and the negative conductor layer 13, thereby enabling the laser chip 14 to generate a corresponding laser beam.

[0030] The above scheme involves placing the positive conductor layer 12 and the negative conductor layer 13 alternately on the substrate 11, further placing the laser chip 14 on the positive conductor layer 12, and connecting the opposite ends of the gold wire 15 to the laser chip 14 and the negative conductor layer 13 respectively, thereby producing a laser module 10. This makes the laser module 10 simple in structure and easy to assemble, easy to mass-produce and test, and also convenient for subsequent high-power array packaging and arrangement of multiple laser modules 10, thus enabling the mass production of high-power-density and high-reliability semiconductor lasers.

[0031] In one embodiment, the thickness of the substrate 11 is greater than the thickness of the positive electrode conductor layer 12, and the thickness is proportionally designed. The specific thickness needs to be determined with reference to the thermal expansion coefficient of the laser chip 14 disposed on the positive electrode conductor layer 12, so that the thermal expansion coefficients are as close as possible. This application does not limit this.

[0032] In one embodiment, there are multiple gold wires 15, and the two ends of the multiple gold wires 15 are arranged in an array to bond to the negative conductor layer 13 and the laser chip 14.

[0033] It is understandable that the higher the operating power of the laser module 10, the more gold wires 15 it includes, so as to effectively reduce the safety risks of using gold wires 15 for power supply. That is, the number of gold wires 15 in the laser module 10 and the number of rows and columns of multiple gold wires 15 are specifically determined by the operating power of the laser module 10, and the number of gold wires 15 should match the current passing through the laser module 10 when it operates at maximum power. This application does not limit this.

[0034] Furthermore, in one embodiment, the thickness of a portion of the substrate 11 corresponding to the positive conductor layer 12 is greater than the thickness of a portion of the corresponding negative conductor layer 13. That is, the substrate 11 forms stepped sections with a height difference in the portions corresponding to the positive conductor layer 12 and the negative conductor layer 13, respectively. This creates a height difference between the positive conductor layer 12 and the negative conductor layer 13 on the substrate 11, thereby reducing the arc height of the gold wire 15 connecting the negative conductor layer 13 and the laser chip 14. This facilitates uniform bonding of the gold wire 15, especially when there are many gold wires 15 arranged in many rows and columns. Increasing the height difference between the negative conductor layer 13 and the laser chip 14 effectively prevents gold wires 15 located in different rows and columns from interfering with each other during bonding. In addition, reducing the arc height of the gold wire 15 also effectively reduces the total required length of the gold wire 15, saving implementation costs.

[0035] In one embodiment, the thickness of the positive conductor layer 12 is greater than the thickness of the negative conductor layer 13 to form a height difference, thereby reducing the arc height of the gold wire 15 that connects the negative conductor layer 13 and the laser chip 14, so as to facilitate uniform bonding of the gold wire 15.

[0036] Alternatively, the substrate 11 can be formed by splicing together two separate substrates 11 with different thicknesses and each having a conductor layer.

[0037] Optionally, the edge of the laser chip 14 away from the negative conductor layer 13 is flush with one edge of the substrate 11, or, as needed, protrudes from one edge of the substrate 11 away from the negative conductor layer 13.

[0038] In one embodiment, the length of the positive conductor layer 12 in the first direction is greater than the length of the laser chip 14 in the first direction, so that it can both ensure that the solder extruded by the laser chip 14 during bonding has enough space to extend, preventing solder accumulation from causing a short circuit in the laser chip 14, and increase the conductive area of ​​the positive conductor layer 12 to reduce resistance.

[0039] Specifically, the first direction is perpendicular to the edge of the laser chip 14 away from the negative conductor layer 13.

[0040] Furthermore, the length of the positive conductor layer 12 in the second direction is greater than or equal to twice the length of the laser chip 14 in the second direction, so that when the laser chip 14 is attached to a set position on the positive conductor layer 12, such as the middle position, the empty area on the positive conductor layer 12 corresponding to both ends of the laser chip 14 can be used as a circuit lead-out port for independent testing of the laser module 10, and also as a circuit connection interface for connecting with other laser modules 10. The wire bonding area of ​​this empty area should meet the working requirements of the product.

[0041] Understandably, when the laser module 10 is operating in a low-current mode, the length of the positive conductor layer 12 in the second direction can be appropriately reduced; however, when the laser module 10 is operating in a high-power, high-current mode, the length of the positive conductor layer 12 in the second direction should be greater than or equal to twice the length of the laser chip 14 in the second direction, in order to increase the wire bonding area and prevent the gold wire from melting when the laser module 10 is operating at high current for a long time.

[0042] The second direction is perpendicular to the first direction and corresponds to the extension direction of the positive conductor layer 12.

[0043] In one embodiment, the laser module 10 further includes a solder sheet 16 or pre-plated solder, which is specifically disposed between the positive conductor layer 12 and the laser chip 14 so that the laser chip 14 can be reflow bonded through the solder sheet 16 to weld the laser chip 14 onto the positive conductor layer 12.

[0044] In one embodiment, a groove is formed on the positive electrode conductor layer 12 at the positions of opposite sides near the laser chip 14. The edge of the groove away from the negative electrode conductor layer 13 is flush with the edge of the positive electrode conductor layer 12 away from the negative electrode conductor layer 13, and the depth of the groove is equal to the thickness of the positive electrode conductor layer 12, so as to expose part of the substrate 11.

[0045] Optionally, the substrate 11 may be a ceramic substrate 11 or any other reasonably heat-dissipating insulating material board, and this application does not limit it in this regard.

[0046] Optionally, the positive electrode conductor layer 12 and the negative electrode conductor layer 13 may be copper-clad layers or other conductive material layers formed alternately on the substrate 11, and this application does not limit them.

[0047] Optionally, the laser chip 14 specifically includes a positive electrode surface and a negative electrode surface arranged opposite to each other, and specifically, its positive electrode surface is attached to the positive electrode conductor layer 12, and its negative electrode surface and the negative electrode conductor layer 13 are connected by gold wire 15.

[0048] Alternatively, the gold wire is specifically bonded to the laser chip 14 via ultrasonic thermobonding to serve as a connecting wire for current extraction.

[0049] Optionally, the gold wire is specifically a gold wire 15 with a diameter of less than 50 micrometers and a purity of 99.999%, and is connected to the laser chip 14 and the negative electrode conductor layer 13 by ball bonding to make the connection firm and stable.

[0050] Optionally, the substrate 11, the positive conductor layer 12, and the negative conductor layer 13 are specifically elongated, i.e. rectangular, and are made into the corresponding laser module 10 using a modular packaging architecture.

[0051] Optionally, the minimum spacing between the positive conductor layer 12 and the negative conductor layer 13 is greater than 0.5 mm to prevent the spacing from being too small and causing a short circuit risk.

[0052] This application also provides a semiconductor laser array packaging component; please refer to [link / reference]. Figure 2 , Figure 2 This is a schematic diagram of the structure of a first embodiment of the semiconductor laser array packaging assembly of this application. In this embodiment, the semiconductor laser array packaging assembly 20 includes: a plurality of laser modules 21 and a heat sink 22.

[0053] Specifically, the heat sink 22 has multiple stepped steps 221, and each step 221 is provided with at least one laser module 21. By adopting a stepped array packaging arrangement and a special electrical connection design, a low-cost and highly reliable heat dissipation solution can be achieved. This can effectively reduce the manufacturing process difficulty and manufacturing cost of the semiconductor laser integrated with the semiconductor laser array packaging component 20, and improve its reliability.

[0054] Laser module 21 is any of the laser modules 10 described above; please refer to the appendix for details. Figure 1 The relevant textual content will not be repeated here.

[0055] In one embodiment, a conductor layer is also provided on the side of the substrate of the laser module 21 facing away from the laser chip, so that it can be bonded to the step on the heat sink.

[0056] Alternatively, the conductor layer and the heat sink can be made of the same material.

[0057] Furthermore, in one embodiment, the semiconductor laser array packaging assembly 20 further includes a heat sink (not shown in the figure), which is specifically disposed on the heat sink 22 and forms a heat dissipation channel. The heat dissipation channel corresponds to at least a plurality of steps 221 and is used to dissipate heat from the plurality of laser modules 21.

[0058] Specifically, the heat sink 22 includes a conductive step 221 heat sink 22 without heat dissipation channels and a step 221 heat sink 22 with macro channels or micro channels.

[0059] It should be noted that existing high-power semiconductor lasers typically use microchannel heat sinks with high heat dissipation efficiency to assemble individual high-power semiconductor laser chips into unit modules via eutectic bonding. Then, multiple unit modules are overlapped and aligned vertically to form a vertical array of semiconductor lasers, or aligned side by side horizontally to form a horizontal array of semiconductor lasers for output.

[0060] Vertical arrays of semiconductor lasers typically use microchannel water-cooled heat sinks for heat dissipation. These high-power microchannel water-cooled semiconductor lasers have high requirements for water quality and are prone to clogging during long-term operation. The microchannel heat sink process is delicate and complex, and the manufacturing cost is too high. There are also problems such as uneven flow distribution when there are too many array units, easy deformation of the array, and complex assembly process.

[0061] Understandably, in this embodiment, when a semiconductor laser array package assembly 20 is manufactured using a stepped array arrangement and a special electrical connection design, multiple laser modules 21 can be sequentially arrayed on each stepped step 221 of the heat sink 22. The heat sink 22 can be composed of active heat dissipation microchannels or macrochannels to effectively reduce its implementation cost and improve the reliability of its heat dissipation solution. This can effectively reduce the manufacturing process difficulty and manufacturing cost of the semiconductor laser integrated with the semiconductor laser array package assembly 20, and improve its reliability.

[0062] Optionally, multiple laser modules 21 are arranged sequentially and centrally on each step 221 of the heat sink 22, and the total height of the steps 221 of the heat sink 22 and the laser modules 21 after bonding must ensure that they do not block or interfere with the optical path of adjacent laser modules 21.

[0063] Furthermore, in one embodiment, the semiconductor laser array packaging assembly 20 further includes a positive electrode connector 23, a negative electrode connector 24, and a first connecting gold wire 25. One end of the positive electrode connector 23 is used to connect to the positive terminal of an external power supply, while its other end is connected to the positive conductor layer of one of the multiple laser modules 21 closest to the positive electrode connector 23. For ease of understanding, the laser module 21 closest to the positive electrode connector 23 is defined here as the first laser module (not shown in the figure). One end of the negative electrode connector 24 is used to connect to the negative terminal of the power supply, and its other end is specifically connected to the negative conductor layer of one of the multiple laser modules 21 closest to the negative electrode connector 24. The laser module 21 of 24 is defined as the second laser module (not shown in the figure); wherein, the positive conductor layer of the laser module 21 on each step 221 is specifically connected to the negative conductor layer or positive electrode connector 23 of the adjacent laser module 21 through the first connecting gold wire 25, and its negative conductor layer is connected to the positive conductor layer or negative electrode connector 24 of the adjacent laser module 21 through the first connecting gold wire 25. That is, multiple laser modules 21 are specifically connected to the positive conductor layer of one of each two adjacent laser modules 21 and the negative conductor layer of the other through the first connecting gold wire 25, so as to realize the series connection between the positive electrode connector 23, the negative electrode connector 24 and each laser module 21, and then can be powered by an external power supply.

[0064] Optionally, the first connecting gold wire 25 may also be a conductive wire of any reasonable material such as aluminum wire or copper wire, and this application does not limit it in this regard.

[0065] Furthermore, in one embodiment, the semiconductor laser array packaging assembly 20 further includes a second connecting gold wire 26 and a third connecting gold wire 27. Specifically, one end of the second connecting gold wire 26 is connected to the positive electrode inlet connector 23, and the other end is connected to the positive electrode conductor layer of one of the multiple laser modules 21 closest to the positive electrode inlet connector 23, i.e., the positive electrode conductor layer of the first laser module. One end of the third connecting gold wire 27 is connected to the negative electrode inlet connector 24, and the other end is connected to the negative electrode conductor layer of one of the multiple laser modules 21 closest to the negative electrode inlet connector 24, i.e., the negative electrode conductor layer of the second laser module. This allows the positive electrode inlet connector 23 and the negative electrode inlet connector 24 to be connected in series with each laser module 21 through the second connecting gold wire 26 and the third connecting gold wire 27, respectively.

[0066] Optionally, the first connecting gold wire 25, the second connecting gold wire 26, and the third connecting gold wire 27 are respectively connected to the end of the positive or negative conductor layer of the corresponding laser module 21, so as to avoid affecting the bonding position of the gold wire (not shown in the figure) that connects the laser chip (not shown in the figure) and the negative conductor layer in the laser module 21.

[0067] Optionally, the first connecting gold wire 25, the second connecting gold wire 26, and the third connecting gold wire 27 each include multiple gold wires, and are arranged in a matrix to be bonded to the positive or negative conductor layer of the corresponding laser module 21, as well as the positive electrode guide connector 23 or the negative electrode guide connector 24.

[0068] Optionally, the positive electrode inlet connector 23 is specifically connected to the opposite ends of the bottom step 221 of the plurality of stepped steps 221 of the heat sink 22, while the negative electrode inlet connector 24 is specifically connected to the opposite ends of the top step 221 of the plurality of stepped steps 221 of the heat sink 22.

[0069] Understandably, the power supply current of the semiconductor laser array package 20 can be introduced from the positive terminal of the power supply to the positive terminal connector 23, and through the first connecting gold wire 25 to the area on the positive conductor layer of a laser module 21 adjacent to the positive terminal connector 23 where no laser chip is set (not shown in the figure). It is then introduced from the positive conductor layer to the laser chip. After passing through the gold wire 211 in the laser module 21 to its negative conductor layer, it is introduced by the third connecting gold wire 27 connected to both ends of the negative conductor layer to the positive conductor layer of the laser module 21 on the adjacent step 221. This process continues until it passes through the negative conductor layer of the laser module 21 adjacent to the negative terminal connector 24, and is then introduced by the second connecting gold wire 26 to the negative terminal connector 24, and finally back to the negative terminal of the power supply, completing the driving circuit of the entire semiconductor laser array package 20.

[0070] In one embodiment, the positive electrode inlet connector 23 may further include a first positive electrode inlet connector 231 and a second positive electrode inlet connector 232, and the first positive electrode inlet connector 231 and the second positive electrode inlet connector 232 are respectively connected to the opposite ends of the step 221 where the first laser module is located, and both are arranged to extend along a third direction, wherein the third direction is specifically the extension direction of the first laser module, that is, the direction in which the vertical gold wire 211 is connected.

[0071] Furthermore, the negative electrode inlet connector 24 may specifically include a first negative electrode inlet connector 241 and a second negative electrode inlet connector 242, and the first negative electrode inlet connector 241 and the second negative electrode inlet connector 242 are respectively connected to the opposite ends of the step 221 where the second laser module is located, and both are arranged to extend along a third direction.

[0072] Please refer to the following: Figure 3 and Figure 4 ,in, Figure 3 This is a schematic diagram of the second embodiment of the semiconductor laser array packaging component of this application. Figure 4 yes Figure 3 Rear view of the semiconductor laser array packaging assembly. The semiconductor laser array packaging assembly in this embodiment is... Figure 2 The difference in the first embodiment of the semiconductor laser array packaging assembly provided in this application is that the positive electrode inlet connector 33 in the semiconductor laser array packaging assembly 30 further includes a first connection portion 331 and a first extension portion 332, and the negative electrode inlet connector 24 further includes a second connection portion 341 and a second extension portion 342.

[0073] The first connecting portion 331 has its two ends connected to the two ends of the positive conductor layer of the first laser module (not shown in the figure), and its middle part is spaced apart from the first laser module. One end of the first extension portion 332 is connected to one end of the first connecting portion 331, and its other end is wrapped around the heat sink 32 to the side away from the multiple laser modules 31 and extended along the fourth direction. The fourth direction is perpendicular to the extension direction of the first laser module, that is, perpendicular to the third direction.

[0074] Optionally, the other end of the first extension 332 may be spaced apart from or in contact with the side of the heat sink 32 that is away from the plurality of laser modules 31; this application does not limit this.

[0075] Furthermore, the two opposite ends of the second connecting portion 341 are respectively connected to the two opposite ends of the negative conductor layer of the second laser module (not shown in the figure), and one end of the second extension portion 342 is connected to one end of the second connecting portion 341, and the other end extends along the fourth direction so that the other end of the second extension portion 342 is flush with the other end of the first extension portion 332, that is, located on the same straight line, so as to facilitate the connection with the positive and negative terminals of the external power supply through the other end of the first extension portion 332 and the other end of the second extension portion 342, and to minimize the space occupied by the semiconductor laser array packaging assembly 30 in the first direction, so as to facilitate subsequent product assembly and use.

[0076] Optionally, the first connecting portion 331 and the second connecting portion 341 are in an n-shape.

[0077] In one embodiment, the semiconductor laser array packaging assembly 30 further includes a packaging cover 321, which is specifically disposed on the side of the heat sink 32 away from the plurality of laser modules 31. The packaging cover 321 is also provided with a liquid inlet 3211 and a liquid outlet 3212, and cooperates with the heat sink 32 to form an internally hollow heat dissipation channel (not shown in the figure). The heat dissipation channel corresponds at least to the positions of the plurality of steps 221 so as to dissipate heat from the plurality of laser modules 31.

[0078] Understandably, cold water, coolant, or any other reasonable liquid with heat dissipation effect can enter through the liquid inlet 3211 on the encapsulation cover 321, dissipate heat for the multiple laser modules 31 through the heat dissipation channel, and then be discharged through the liquid outlet 3212.

[0079] Optionally, the liquid inlet 3211 is located on one side of the encapsulation cover 321 perpendicular to each laser module 31, while the liquid outlet 3212 is located on one side of the encapsulation cover 321 parallel to each laser module 31.

[0080] In another embodiment, the semiconductor laser array packaging assembly 20 may further include two identical heat sinks 32, and the two heat sinks 32 are connected and fixed to each other on the side away from the laser module 31, so as to form a heat dissipation channel by utilizing the gap between the two heat sinks 32, and a sealing gasket is used as a liquid barrier layer for guiding the flow, so that the heat dissipation channels between the two heat sinks 32 are connected in series.

[0081] It is understood that laser module 31, heat sink 32, step 321, first connecting gold wire 35, second connecting gold wire 36, third connecting gold wire 37, and gold wire 311 are respectively the same as laser module 21, heat sink 22, step 221, first connecting gold wire 25, second connecting gold wire 26, third connecting gold wire 27, and gold wire 211. Please refer to the following for details. Figure 2 and Figure 3 The relevant textual content will not be repeated here.

[0082] This application also provides a semiconductor laser; please refer to [link / reference]. Figure 5 , Figure 5 This is a schematic diagram of one embodiment of the semiconductor laser of this application. In this embodiment, the semiconductor laser 40 includes: a semiconductor laser array packaging assembly 41 and an optical assembly array 42;

[0083] The optical component array 42 is used to shape the laser beam emitted by multiple laser modules (not shown) in the semiconductor laser array package assembly 41. The semiconductor laser array package assembly 41 is specifically the semiconductor laser array package assembly 20 or 30 as described above. Please refer to the appendix for details. Figures 2-4 The relevant textual content will not be repeated here.

[0084] The beneficial effects of this application are as follows: Unlike the prior art, the positive and negative conductor layers in the laser module provided by this application are spaced apart on its substrate, and the laser chip is further disposed on the positive conductor layer. One end of the gold wire is connected to the laser chip, and the other end is connected to the negative conductor layer. That is, the laser module is made by adopting a modular packaging architecture, which can be used to adopt a more flexible array packaging arrangement. For example, multiple laser modules can be constructed into a semiconductor laser array packaging component by adopting a stepped array packaging arrangement. This allows for the adoption of new low-cost and high-reliability heat dissipation solutions, thereby effectively reducing the process difficulty and manufacturing cost of the corresponding semiconductor laser and improving its reliability.

[0085] The above are merely embodiments of this application and do not limit the scope of this patent application. Any equivalent structural or procedural changes made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A semiconductor laser array packaging assembly, characterized in that, include: Multiple laser modules; The heat sink has multiple stepped steps, and at least one laser module is provided on each step, with adjacent laser modules electrically connected to each other. The laser module includes: substrate; A positive electrode conductor layer and a negative electrode conductor layer are disposed alternately on the substrate; A gold wire, one end of which is connected to the laser chip and the other end of which is connected to the negative electrode conductor layer; The substrate has stepped steps with height differences forming in certain areas corresponding to the positive and negative conductor layers, thereby increasing the height difference between the negative conductor layer and the laser chip and reducing the arc height of the gold wire connecting the negative conductor layer and the laser chip. The thickness of the substrate is greater than the thickness of the positive conductor layer and is designed proportionally. A groove is formed on the positive conductor layer near the opposite sides of the laser chip. The edge of the groove away from the negative conductor layer is flush with the edge of the positive conductor layer away from the negative conductor layer. The depth of the groove is equal to the thickness of the positive conductor layer to expose part of the substrate. The laser chip is disposed on the positive electrode conductor layer.

2. The semiconductor laser array packaging assembly according to claim 1, characterized in that, The edge of the laser chip away from the negative conductor layer is flush with one edge of the substrate.

3. The semiconductor laser array packaging assembly according to claim 1, characterized in that, The length of the positive electrode conductor layer in the first direction is greater than the length of the laser chip in the first direction, and the length of the positive electrode conductor layer in the second direction is greater than or equal to twice the length of the laser chip in the second direction; wherein, the first direction is perpendicular to the side edge of the laser chip away from the negative electrode conductor layer, and the second direction is perpendicular to the first direction.

4. The semiconductor laser array packaging assembly according to claim 1, characterized in that, The semiconductor laser array packaging assembly further includes a positive electrode inlet connector, a negative electrode inlet connector, and a first connecting gold wire. One end of the positive electrode inlet connector is used to connect to the positive terminal of an external power supply, and the other end is connected to the positive conductor layer of the first laser module closest to the positive electrode inlet connector among the plurality of laser modules. One end of the negative electrode inlet connector is used to connect to the negative terminal of the power supply, and the other end is connected to the negative conductor layer of the second laser module closest to the negative electrode inlet connector among the plurality of laser modules. The first connecting gold wire sequentially connects the positive conductor layer of one of each pair of adjacent laser modules to the negative conductor layer of the other, thereby realizing the series connection between the positive electrode inlet connector, the negative electrode inlet connector, and each of the laser modules.

5. The semiconductor laser array packaging assembly according to claim 4, characterized in that, The semiconductor laser array packaging assembly further includes a second connecting gold wire and a third connecting gold wire. One end of the second connecting gold wire is connected to the positive electrode inlet connector, and the other end is connected to the positive electrode conductor layer of the first laser module. One end of the third connecting gold wire is connected to the negative electrode inlet connector, and the other end is connected to the negative electrode conductor layer of the second laser module.

6. The semiconductor laser array packaging assembly according to claim 4, characterized in that, The positive electrode inlet connector includes a first positive electrode inlet connector and a second positive electrode inlet connector. The first positive electrode inlet connector and the second positive electrode inlet connector are respectively connected to the opposite ends of the step where the first laser module is located, and both extend along a third direction; wherein, the third direction is the extension direction of the first laser module; The negative electrode inlet connector includes a first negative electrode inlet connector and a second negative electrode inlet connector. The first negative electrode inlet connector and the second negative electrode inlet connector are respectively connected to the opposite ends of the step where the second laser module is located, and both extend along the third direction.

7. The semiconductor laser array packaging assembly according to claim 4, characterized in that, The positive electrode inlet connector includes a first connecting portion and a first extension portion. The opposite ends of the first connecting portion are respectively connected to the opposite ends of the positive electrode conductor layer of the first laser module. One end of the first extension portion is connected to one end of the first connecting portion, and the other end of the extension portion is wrapped around to the side of the heat sink away from the plurality of laser modules and extended along a fourth direction. The fourth direction is perpendicular to the extension direction of the first laser module. The negative electrode inlet connector includes a second connecting portion and a second extension portion. The two opposite ends of the second connecting portion are respectively connected to the two opposite ends of the negative electrode conductor layer of the second laser module. One end of the second extension portion is connected to one end of the second connecting portion, and the other end extends along the fourth direction so that the other end of the second extension portion and the other end of the first extension portion are on the same straight line.

8. The semiconductor laser array packaging assembly according to any one of claims 1-7, characterized in that, The semiconductor laser array packaging assembly further includes a packaging cover, which is disposed on the side of the heat sink away from the plurality of laser modules. The packaging cover is also provided with a liquid inlet and a liquid outlet, and cooperates with the heat sink to form a heat dissipation channel. The heat dissipation channel corresponds to at least a plurality of the step positions and is used to dissipate heat from the plurality of laser modules.

9. A semiconductor laser, characterized in that, The semiconductor laser includes: a semiconductor laser array packaging assembly and an optical component array, wherein the optical component array is used to shape the laser beam emitted by the plurality of laser modules; Wherein, the semiconductor laser array packaging component is the semiconductor laser array packaging component as described in any one of claims 1-8.

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