Temperature correction using bandgap absorption

Abstract

A method and apparatus for calibrating a non-contact temperature sensor within a process chamber are described herein. Calibration of the non-contact temperature sensor includes utilizing a band edge detector to determine a band edge absorption wavelength of a substrate. The band edge detector is configured to measure the intensity of a range of wavelengths and determine an actual temperature of the substrate based on the band edge absorption wavelength and material of the substrate. The calibration method is automated and does not require human intervention or disassembly of the process chamber each time calibration is performed.

Description

Technical Field

[0001] The embodiments of this disclosure generally relate to apparatus and methods for semiconductor processing. More specifically, the disclosed apparatus and methods relate to the calibration of temperature sensors within a heat treatment chamber. Background Technology

[0002] Semiconductor substrates are processed for a variety of applications, including the fabrication of integrated devices and microdevices. During processing, the substrate is positioned on a pedestal within a processing chamber. The pedestal is supported by a support shaft that can rotate about a central axis. Precise control of the heating source (such as multiple heating lamps positioned below and above the substrate) allows the substrate to be heated within very tight tolerances. The temperature of the substrate can affect the uniformity of the material deposited on it.

[0003] Non-contact temperature sensors are used to measure the substrate temperature throughout the deposition process. These sensors are positioned on the cover of the heat treatment chamber or are configured to pass through the cover. Over time, the temperature readings of the non-contact temperature sensors can drift due to changes in the hardware conditions within the treatment chamber. Aging of the heating lamps, window coating, and substrate over time can affect temperature measurements. Previous calibration methods have used calibration kits that take advantage of the opening of the treatment chamber and significant downtime.

[0004] Therefore, there is a need for improved methods and devices for calibrating non-contact temperature sensors within heat treatment chambers. Summary of the Invention

[0005] This disclosure generally relates to an apparatus and method for calibrating a pyrometer within an epitaxial deposition chamber. More specifically, this disclosure relates to using a band gap edge detector to determine the temperature of a substrate. According to one embodiment of this disclosure, a measurement assembly for calibrating a pyrometer within a processing chamber includes a band edge calibration assembly. The band edge calibration assembly includes a light source positioned to emit light and a band edge detector disposed adjacent to the light source and positioned to receive light emitted by the light source. The measurement assembly for calibrating a pyrometer within a processing chamber further includes a first pyrometer disposed adjacent to the band edge calibration assembly and positioned to receive radiation measurements, and a controller connected to each of the light source, the band edge detector, and the first pyrometer. The controller is configured to determine the band edge absorption wavelength based on the light received by the band edge detector.

[0006] In another embodiment, the apparatus for substrate processing includes a chamber body, a substrate support disposed within the chamber body, a first transmissive member disposed above the substrate support and within the chamber body, a second transmissive member disposed below the substrate support and within the chamber body, a cover disposed above the first transmissive member, a plurality of lamps disposed between the first transmissive member and the cover, a correction substrate disposed on the substrate support, a radiation source positioned to guide radiation onto or through the correction substrate, and a band edge correction assembly disposed on the cover. The band edge correction assembly includes a band edge detector positioned to receive radiation from the radiation source that has been reflected off or through the correction substrate. The apparatus for substrate processing further includes a first pyrometer disposed adjacent to the band edge correction assembly and a controller. The controller is configured to irradiate a portion of the correction substrate with the radiation source, measure the band edge absorption wavelength, measure a first temperature of the correction substrate using the first pyrometer, determine the actual temperature of the correction substrate using the band edge absorption wavelength, and calibrate the first pyrometer by comparing the first temperature of the correction substrate with the actual temperature of the correction substrate.

[0007] In another embodiment, a method for calibrating a pyrometer within a processing chamber is disclosed. The method includes transferring a calibration substrate onto a substrate support within the chamber body, illuminating a portion of the calibration substrate with a light source, measuring the band-edge absorption wavelength using a band-edge detector, measuring a first temperature of the calibration substrate using a first pyrometer, and determining the actual temperature of the calibration substrate using the band-edge absorption wavelength. The first pyrometer is calibrated by comparing the first temperature of the calibration substrate with the actual temperature of the calibration substrate. The calibration substrate is then transferred out of the chamber body. Attached Figure Description

[0008] To gain a more detailed understanding of the features described above, the present disclosure, which has been briefly outlined above, can be described in more detail with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only exemplary embodiments and should not be considered as limiting the scope, as the present disclosure allows for other equally effective embodiments.

[0009] Figure 1 This is a schematic plan view of a substrate processing system according to one embodiment.

[0010] Figure 2 This is a schematic cross-sectional view of a processing chamber according to one embodiment.

[0011] Figure 3 According to one embodiment, in Figure 1 A schematic side view of the box used in the loading and locking chamber of the substrate processing system.

[0012] Figure 4According to one embodiment, in Figure 2 A schematic cross-sectional view of the measuring components used in the processing chamber.

[0013] Figure 5 Utilization according to one embodiment Figure 2 A method for processing the measuring components within the chamber.

[0014] Figure 6 Correction according to one implementation method Figure 2 A method for processing non-contact temperature sensors within a cavity.

[0015] Figure 7 A diagram illustrating absorption wavelength detection according to one embodiment.

[0016] Figure 8 A graph illustrating the correlation between absorption wavelength and temperature according to one embodiment.

[0017] To facilitate understanding, the same reference numerals are used where possible to indicate common elements in the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated into other embodiments without further description. Detailed Implementation

[0018] This disclosure generally relates to apparatus and methods for semiconductor processing, and more specifically, to a heat treatment chamber. The heat treatment chamber includes a substrate support, a first plurality of heating elements disposed above the substrate support, and a measuring assembly disposed within the heat treatment chamber to calibrate a non-contact temperature sensor. The calibration apparatus and method utilize a bandgap detector to determine the actual temperature of the calibration substrate. The calibration substrate has a known bandgap within a certain temperature range. The absorption edge frequency depends only on the material bandgap of the calibration substrate and is therefore unaffected by variations within the hardware of the processing chamber, such as aging of the heating lamps, window coating, or substrate. The bandgap measurement of the calibration substrate is related to the temperature measurement and is used to calibrate a non-contact temperature sensor, such as a pyrometer, within the processing chamber.

[0019] Using the methods described herein, an automated process is employed to calibrate non-contact temperature sensors without human intervention or removal of chamber components. This automated calibration process reduces downtime, minimizes human error, and improves calibration consistency.

[0020] As described herein, "substrate" or "substrate surface" generally refers to any substrate surface on which processing is performed. Processing includes deposition, etching, and other methods utilized during semiconductor processing. For example, processable substrate surfaces include silicon, silicon oxide, doped silicon, silicon germanium, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive or semiconductive materials, depending on the application. Processable substrates or substrate surfaces also include dielectric materials such as silicon dioxide, silicon nitride, organosilicones, and carbon-doped silicon oxide or nitride materials. The substrate itself is not limited to any particular size or shape. Although the embodiments described herein are made from a generally referenced 200 mm or 300 mm circular substrate, other shapes, such as polygons, squares, rectangles, curves, or other non-circular workpieces, may be utilized according to the embodiments described herein.

[0021] Figure 1 This is a schematic plan view of a substrate processing system 100 including the processing chambers 130a-130d described herein, according to one embodiment. The substrate processing system 100 is used to process a semiconductor substrate by performing various processes on the substrate. The substrate processing system 100 described herein includes a transfer chamber 110, a plurality of processing chambers 130a-130d, loading and locking chambers 120a and 120b, a factory interface (FI) 140, and front-opening universal pods (FOUPs) 150a and 150b. The processing chambers 130a-130d and the loading and locking chambers 120a and 120b are coupled to the transfer chamber 110. The loading and locking chambers 120a and 120b are further coupled to the FI 140. The FI 140 receives the FOUPs 150a and 150b, which are opposite to and coupled to the loading and locking chambers 120a and 120b. Loading and locking chambers 120a and 120b include boxes 135 disposed therein for storing substrates between processing operations. Transfer chamber 110 includes a transfer robot 115 disposed therein. Transfer robot 115 is used to transfer substrates between processing chambers 130a-130d and loading and locking chambers 120a and 120b.

[0022] Each of the processing chambers 130a-130d includes a loading port 125 located adjacent to the transfer chamber 110, through which the substrate enters or exits the processing chambers 130a-130d. Figure 2The processing chambers 130a-130d are described in more detail below. In some embodiments, there are four processing chambers 130a-130d, namely a first processing chamber 130a, a second processing chamber 130b, a third processing chamber 130c, and a fourth processing chamber 130d. A transfer chamber 110 is a central chamber configured to transfer substrates within a controlled environment. The transfer chamber 110 is maintained at a constant temperature and pressure. While the substrate is being processed within the processing chambers 130a-130d, the transfer chamber 110 can be vacuum isolated from each of the processing chambers 130a-130d.

[0023] Loading locking chambers 120a and 120b include a first loading locking chamber 120a and a second loading locking chamber 120b. Loading locking chambers 120a and 120b are disposed between and coupled to both transfer chamber 110 and FI 140. Each of the loading locking chambers 120a and 120b includes a housing 135. The housing 135 is located in... Figure 3 The following is shown in more detail and described herein. A housing 135 contains multiple substrates. The substrates are stored in the housing 135 between processing operations and can be moved by a transfer robot 115.

[0024] FI 140 includes one or more robots (not shown) disposed therein. The substrate is transferred within FI 140 between FOUP 150a, 150b and loading locking chambers 120a, 120b. FI 140 is a clean environment and can be maintained at a constant temperature and pressure, different from the transfer chamber 110.

[0025] FOUPs 150a and 150b include a first FOUP 150a and a second FOUP 150b. Additional FOUPs, not shown, may be present. FOUPs 150a and 150b are used to store substrates before or after processing within the processing chambers 130a-130d.

[0026] Figure 2 This is a schematic cross-sectional view of a processing chamber 130a including the measurement component 270 described herein, according to one embodiment. Processing chamber 130a is a first processing chamber, but a second processing chamber 130b, a third processing chamber 130c, and a fourth processing chamber 130d may be similar to or identical to the first processing chamber 130a. Processing chamber 130a can be used as an epitaxial deposition chamber, a rapid thermal processing chamber, or other thermal processing chamber. Processing chamber 130a can be used to process one or more substrates, including depositing material on the upper surface of substrate 202, heating substrate 202, etching substrate 202, or a combination of the above processes. Substrate 202 is a device substrate and includes a plurality of portions of semiconductor devices formed thereon. Substrate 202 may be similar to a calibration substrate 350 used in place of substrate 202.

[0027] The processing chamber 130a generally includes a chamber body 248, an array of radiant heating lamps 204 for heating, and a base 206 disposed within the processing chamber 130a. For example... Figure 2 As shown, an array of radiant heating lamps 204 can be positioned below, above, or both above and below the base 206. The radiant heating lamps 204 can provide a total lamp power between approximately 2 kW and approximately 150 kW. The radiant heating lamps 204 can heat the substrate 202 to a temperature between approximately 350°C and approximately 1150°C. The base 206 can be a disc-shaped substrate support as shown, or it can include an annular substrate support (not shown) that supports the substrate from its edge, thereby exposing the back side of the substrate 202 to heat from the radiant heating lamps 204. The base 206 can be formed of silicon carbide or graphite coated with silicon carbide to absorb radiant energy from the lamps 204 and conduct the radiant energy to the substrate 202, thereby heating the substrate 202. In some embodiments, the base 206, after being heated to a high temperature, functions as a radiation source. In this example, the base 206 functions as a broadband radiation source and emits a wide range of wavelengths. The base 206 can be at a temperature greater than 350°C, such as between about 350°C and about 1200°C.

[0028] A base 206 is located between a first transmission member 208 (which may be dome-shaped) and a second transmission member 210 (which may be dome-shaped) within a processing chamber 130a. The first transmission member 208 and the second transmission member 210, together with a base ring 212 disposed between the first transmission member 208 and the second transmission member 210, generally define an internal region 211 of the processing chamber 130a. Each of the first transmission member 208 and / or the second transmission member 210 may be convex and / or concave and / or planar. In some embodiments, each of the first transmission member 208 and / or the second transmission member 210 is transparent. The first transmission member 208 is disposed between the chamber cover 254 and the base 206. In some embodiments, an array of radiant heating lamps 204 may be disposed outside the internal region 211 of the processing chamber 130a and / or above the first transmission member 208, for example, in the region 201 defined between the first transmission member 208 and the chamber cover 254. The substrate 202 can be conveyed to the processing chamber 130a and positioned on the base 206 through the loading port 125 formed in the base ring 212. The processing gas inlet 214 and the gas outlet 216 are provided in the base ring 212.

[0029] The base 206 includes a shaft or rod 218 coupled to the motion assembly 220. The motion assembly 220 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment of the rod 218 and / or the base 206 within the internal region 211. For example, the motion assembly 220 may include a rotary actuator 222 that rotates the base 206 about a longitudinal axis A of the processing chamber 130a. The longitudinal axis A may include the center of the XY plane of the processing chamber 130a. The motion assembly 220 may include a vertical actuator 224 that raises and lowers the base 206 in the Z direction. The motion assembly 220 may include a tilt adjustment device 226 for adjusting the planar orientation of the base 206 within the internal region 211. The motion assembly 220 may also include a lateral adjustment device 228 for adjusting the positioning of the rod 218 and / or the base 206 left and right within the internal region 211. In embodiments including a lateral adjustment device 228 and a tilt adjustment device 226, the lateral adjustment device 228 is used to adjust the positioning of the rod 218 and / or the base 206 in the X and / or Y directions, while the tilt adjustment device 226 adjusts the angular orientation (α) of the rod 218 and / or the base 206. In one embodiment, the motion assembly 220 includes a pivot mechanism 230. When the second transmission member 210 is attached to the processing chamber 130a by the base ring 212, the pivot mechanism 230 allows the motion assembly 220 to move the rod 218 and / or the base 206 at least in the angular orientation (α) to reduce stress on the second transmission member 210.

[0030] The base 206 is illustrated in an elevated processing position, but can be vertically lifted or lowered by the motion assembly 220 as described above. The base 206 can be lowered to a transfer position (below the processing position) to allow the lifting pin 232 to contact the second transmission member 210. As the base 206 descends, the lifting pin 232 extends through a hole 207 in the base 206, and the lifting pin 232 raises the substrate 202 from the base 206. A robot (such as robot 115) can then enter the processing chamber 130a to engage the substrate through the loading port 125 and remove the substrate from the chamber. A new substrate 202 can be loaded onto the lifting pin 232 by the robot, and the base 206 can then be actuated to the processing position to place the substrate 202 with its device side 258 facing upwards. The lifting pin 232 includes an enlarged head, allowing the lifting pin 232 to be suspended from the base 206 in an opening at the processing position. In one embodiment, a stand-off 234 coupled to the second transmission member 210 provides a flat surface for the lifting pin 232 to contact. The stand-off provides one or more surfaces parallel to the XY plane of the processing chamber 130a and serves to prevent adhesion that could occur if the lifting pin 232 were to contact a curved surface of the second transmission member 210 at its end. The stand-off 234 may be made of an optically transparent material such as quartz to allow energy from the lamp 204 to pass through.

[0031] When in the processing position, the base 206 divides the internal volume of the processing chamber 130a into a processing gas region 236 above the base 206 and a purge gas region 238 below the base 206. During processing, the base 206 is rotated by a rotary actuator 222 to minimize the effects of heat and abnormal processing airflow within the processing chamber 130a, thereby promoting uniform processing of the substrate 202. The base 206 can rotate between approximately 5 RPM and approximately 100 RPM (e.g., between approximately 10 RPM and approximately 50 RPM). The base 206 is supported by a rod 218, which is generally centered on the base 206 and facilitates movement of the substrate 202 in the vertical direction (Z direction) during substrate transfer and, in some cases, during substrate processing.

[0032] Typically, the central portions of the first transmission member 208 and the second transmission member 210 are formed of an optically transparent material such as quartz. The thickness and curvature of the first transmission member 208 can be selected to provide a flatter geometry for uniform flow in the processing chamber.

[0033] One or more lamps (such as an array of radiant heating lamps 204) may be arranged in a specific manner adjacent to and below the second transmission member 210 around the rod 218. The radiant heating lamps 204 may be independently controlled in a zoned manner to control the temperature on each region of the substrate 202 as the process gas passes through each region of the substrate 202, thereby promoting the deposition of material on the upper surface of the substrate 202. Although not discussed in detail herein, the deposited material may include silicon, doped silicon, germanium, doped germanium, silicon-germanium, doped silicon-germanium, gallium arsenide, gallium nitride, or aluminum gallium nitride.

[0034] Radiant heating lamps 204 may include a radiant heat source, described herein as bulbs 241, and may be configured to heat substrate 202 to a temperature ranging from approximately 200°C to approximately 1,600°C. Each bulb 241 may be coupled to a controller 250. The controller 250 includes a power distribution board, such as a printed circuit board (PCB) 252, a memory 255, and support circuitry 257. The controller 250 may power each bulb 241, control a processing gas source 251, control a purge gas source 262, control a vacuum pump 259, and control a measurement assembly 270. If necessary, a bracket may be used to couple the bulbs 241 to the power distribution board to change the lamp arrangement. In one embodiment, the radiant heating lamps 204 are positioned within a lamp holder 245, which may be cooled during or after processing by, for example, introducing cooling fluid into channels 249 located between the radiant heating lamps 204.

[0035] In some embodiments, a gasket 263 is disposed within the base ring 212 and surrounds the base 206. The gasket 263 is coupled to the base ring 212 and protects the inner surface of the base ring 212 during substrate processing. A process gas inlet 214, a gas outlet 216, and a purge gas inlet 264 are all disposed through the gasket 263. In some embodiments, the gasket 263 is a reflective gasket.

[0036] Process gas supplied by process gas supply source 251 is introduced into process gas region 236 through process gas inlet 214 formed in the sidewall of base ring 212. Process gas inlet 214 is configured to guide the process gas in a generally radially inward direction. Thus, in some embodiments, process gas inlet 214 may be a cross-flow gas injector. The cross-flow gas injector is positioned to guide the process gas across the surfaces of base 206 and / or substrate 202. During the film deposition process, base 206 is located in a processing position adjacent to and at approximately the same height as process gas inlet 214, thereby allowing the process gas to flow generally across the upper surfaces of base 206 and / or substrate 202. Process gas exits process gas region 236 through gas outlet 216 located on the side opposite to process gas inlet 214 of processing chamber 130a. Vacuum pump 257 coupled to gas outlet 216 facilitates the removal of process gas from gas outlet 216. In some embodiments, there are multiple process gas inlets 214 and multiple gas outlets 216. In some embodiments, five or more process gas inlets 214 are provided along the inner circumference of the base ring 212, and three or more gas outlets 216 are provided along the inner circumference of the base ring 212. Each of the process gas inlets 214 and gas outlets 216 is parallel to each other and configured to guide or receive process gas flowing along different portions of the substrate 202.

[0037] Purified gas supplied by purified gas source 262 is introduced into purified gas region 238 through purified gas inlet 264 formed in the sidewall of base ring 212. Purified gas inlet 264 is located at a height below processing gas inlet 214. Purified gas inlet 264 is configured to guide purified gas in a generally radially inward direction. Purified gas inlet 264 can also be configured to guide purified gas in an upward direction. In the film formation process, base 206 is located at a position such that purified gas generally flows across the back side of base 206. Purified gas exits purified gas region 238 and exits processing chamber 130a through gas outlet 216 located on the side opposite to purified gas inlet 264.

[0038] The measuring assembly 270 is capable of accurately measuring the temperature of the substrate 202. The substrate temperature is measured by non-contact temperature sensors 272 and 278 configured to measure the temperature at the device side 258 and the bottom side 253 of the substrate 202. The measuring assembly 270 further includes a light source 274 and an edge detector 276. Each of the first non-contact temperature sensor 272, the light source 274, and the edge detector 276 is disposed above the substrate 202. The second non-contact temperature sensor 278 is disposed below the substrate 202 and located within the lamp holder 245. The non-contact temperature sensors 272 and 278 may be pyrometers disposed in ports formed in the chamber cover 254 or the lamp holder 245.

[0039] Light source 274 is a laser source with controlled intensity and wavelength range. In some embodiments, a broadband light source is used. Light source 274 may be a diode laser or an optical fiber. When light source 274 is an optical fiber, the optical fiber is connected to a separate light source, which may be located near the processing chamber. Alternatively, light source 274 may be a single laser beam or optical fiber, such that multiple beams are focused into a first correction beam 286. In some embodiments, light source 274 may emit radiation with a varying wavelength range. The varying wavelength range allows light source 274 to emit wavelengths within approximately 200 nm of the expected absorption edge wavelength of the correction substrate. Using a varying wavelength range eliminates noise that may be caused by using a wider wavelength spectrum and allows for increased emission intensity from a narrower range of light source 274 to increase the signal strength received by the band-edge detector 276. In some embodiments, one or more radiant heating lamps 204 serve as light source 274, and light source 274 is positioned between chamber cover 254 and first transmission member 208. In some embodiments, light source 274 may be classified as a radiation source, such as a thermal radiation source or a broadband radiation source. The radiation source may be a laser diode or an optical assembly. The optical assembly may include a laser, a lamp or bulb, and multiple lenses, mirrors, or combinations of lenses and mirrors.

[0040] A band-edge detector 276 measures the intensity of light at different wavelengths within a second correction beam 284, which is reflected by the correction substrate 350. The band-edge detector 276 is configured to find a wavelength at which the correction substrate 350 transitions from absorbing radiation to reflecting almost all radiation wavelengths. The band-edge detector 276 may include several optical components disposed therein to separate and measure the second correction beam 284. In some embodiments, the band-edge detector 276 scans the entire wavelength range to determine the transition wavelength at which the correction substrate 350 transitions from absorbing to reflecting radiation. In some embodiments, the band-edge detector 276 measures the wavelength intensity of light transmitted from the base 206 through the correction substrate 350 (described below). As mentioned above, in some cases, the base 206 serves as a radiation source. The wavelength intensity of radiation emitted by the base 206 and transmitted through the correction substrate 350 or substrate 202 can be measured by the band-edge detector 276. The band-edge detector 276 then determines the wavelength at which the correction substrate 350 transitions from an absorption wavelength to a transmission wavelength. An optional filter can be placed between the edge detector 276 and the base and configured to filter out radiation emitted by the bulb 241.

[0041] In some embodiments, a second edge detector is disposed below the base 206. The second edge detector may be located in a similar position to the second non-contact temperature sensor 278 and / or may replace or be combined with the second non-contact temperature sensor 278. The second edge detector is structurally similar to the first edge detector 276, but calibrates the second non-contact temperature sensor 278 by measuring the intensity of the wavelength transmitted through the calibration substrate 350 by a lower window disposed within the base 206. Both the second non-contact temperature sensor 278 and the second edge detector are referred to herein as the second non-contact temperature sensor 278, but it is generally understood that the second edge detector and the second non-contact temperature sensor 278 may have a spatial relationship similar to the spatial relationship shown between the edge detector 276 and the first non-contact temperature sensor 272.

[0042] During the calibration method disclosed herein, a calibration substrate 350 is used instead of substrate 202. Calibration substrate 350 is similar in size and shape to substrate 202. Calibration substrate 350 includes a top side 358 and a bottom side 353. Top side 358 is similar to the device side 258 of substrate 202, and bottom side 353 is similar to the bottom side 253 of substrate 202. Calibration substrate 350 can be made of a variety of crystalline materials. Exemplary materials and compounds that can form calibration substrate 350 include Si, Ge, SiC, GaN, GaAs, AlN, InN, 3C-SiC, or InP materials. Different materials with different crystal structures are known to have different band gaps in different temperature ranges. In the embodiments described herein, a calibration substrate 350 formed of crystalline SiC material is advantageous because crystalline SiC material has absorption edge wavelengths that are easily measured using current band gap detection techniques for temperatures between approximately 300°C and approximately 1200°C. The band gap can be measured by determining the wavelength at which radiation changes from being absorbed by the material to being reflected by the material.

[0043] The calibration substrate 350 is formed of a single material or compound because introducing additional materials / compounds could result in multiple band gaps being measured by the band gap detector 276. In some embodiments, the calibration substrate 350 has a concentration of a single compound or material greater than about 95% (e.g., greater than 98%, greater than 99%, greater than 99.9%, greater than 99.99%, greater than 99.999%). The calibration substrate 350 is a crystalline material, and amorphous materials are minimized to improve band gap edge detection. Using a calibration wavelength with a high percentage of a single material also increases thermal uniformity within the calibration substrate 350. Thermal uniformity improves the comparison accuracy between the temperature measurements of the first and second non-contact temperature sensors 272, 278 and the band gap detector 276 when each of the measured temperatures originates from slightly different locations along the surface of the calibration substrate 350.

[0044] During the calibration of the first and second non-contact temperature sensors 272 and 278, a first measurement radiation path 282 of the first non-contact temperature sensor 272 is disposed between the first non-contact temperature sensor 272 and the device side 358 of the calibration substrate 350. A second measurement radiation path 288 of the second non-contact temperature sensor 278 is disposed between the second non-contact temperature sensor 278 and the bottom side 353 of the calibration substrate 350. A first calibration beam 286 is emitted by a light source 274 and strikes the top side 358 of the calibration substrate 350, then is reflected as a second calibration beam 284 and received by a band-edge detector 276. The band-edge detector 276 analyzes the wavelength of the second calibration beam 284 and determines the actual temperature of the calibration substrate 350. A method for determining the actual temperature of the calibration substrate 350 is described herein. Figure 5 and Figure 6The actual temperature of the calibration substrate 350 is compared with the temperature measured by the first and second non-contact temperature sensors 272 and 278 to facilitate the calibration of the first and second non-contact temperature sensors 272 and 278.

[0045] The chamber cover 254 may be a reflector and optionally positioned outside the first transmission member 208 to reflect infrared (IR) light radiating from the substrate 202 and redirect the energy back onto the substrate 202. The chamber cover 254 may be secured above the first transmission member 208 using a clamp 256. The chamber cover 254 may be made of metal, such as aluminum or stainless steel. The measurement assembly 270 is positioned through the chamber cover 254 to receive radiation from the device side 250 of the substrate 202.

[0046] Figure 3 According to one embodiment, in Figure 1 A schematic side view of a cassette 135 used within the loading and locking chambers 120a and 120b of the substrate processing system 100. When the substrate is not being processed within the processing chambers 130a-130d, the cassette 135 is used to store the substrate, such as substrate 202. The cassette 135 includes an upper member 304, a lower member 302, and a plurality of support members 306.

[0047] The upper component 304 and the lower component 302 are disc-shaped and have the same diameter. When a 300mm substrate is stored in the housing 135, the diameter of the upper component 304 and the lower component 302 is approximately 305mm to approximately 325mm. The diameter of the upper component 304 and the lower component 302 is approximately 10mm to approximately 25mm, or approximately 10mm to approximately 15mm, larger than the outer diameter of the substrate 202.

[0048] Multiple support members 306 are vertically arranged and configured to hold substrates, such as substrate 202 and correction substrate 350. Support members 306 are disposed between upper member 304 and lower member 302. Support members 306 are coupled to each of the upper member 304 and lower member 302. Support members 306 include a first support member 308, a second support member 310, and a third support member 312. Each of the first, second, and third support members 308, 310, and 312 includes multiple wall shelves 320 disposed therein. The wall shelves 320 within each of the first, second, and third support members 308, 310, and 312 face radially inward toward the central axis 325 of the housing 135.

[0049] Each of the first, second, and third support members 308, 310, and 312 has 20 to 50 shelves, such as about 25 to 40 shelves, for supporting substrates, such as substrate 202 and calibration substrate 350. In some embodiments, the housing 135 has 28 shelves disposed in each of the first, second, and third support members 308, 310, and 312, such that at least one calibration substrate 350 can be stored together with 25 device substrates 202 within the housing 135. The substrate 202 and calibration substrate 350 are held in a horizontal position while stored in the housing 135 and are contacted at their outer edges by shelves 320 of each of the first, second, and third support members 308, 310, and 312.

[0050] Figure 4 According to one embodiment, in Figure 2 A schematic cross-sectional view of the measuring assembly 270 used within the processing chamber 130a. (Except for...) Figure 2 In addition to the components described, Figure 4 The measuring component 270 further includes a first window 403, a second window 408, a third window 404, a fourth window 407, and a cover 420.

[0051] A first window 403 is disposed within the first opening 402. The first window 403 is disposed between the first non-contact temperature sensor 272 and the first transmission member 208. Therefore, the first window 403 is disposed between the first non-contact temperature sensor 272 and the calibration substrate 350. The first window 403 is a quartz window and allows radiation from the processing chamber 130a to pass through it. The first window 403 filters radiation emitted by the calibration substrate 350 to allow only the wavelength measured by the first non-contact temperature sensor 272 to pass through. Radiation traveling along the first measurement radiation path 282 travels between the top side 358 of the calibration substrate 350 and the first non-contact temperature sensor 272. The first measurement radiation path 282 intersects both the first transmission member 208 and the first window 403. In some embodiments that can be combined with other embodiments, the first measurement radiation path 282 may intersect the top side 358 of the calibration substrate 350 at any radial location along the calibration substrate 350. In some embodiments, the first measurement radiation path 282 intersects the top side 358 of the calibration substrate 350 at a specific location, such as less than 15 mm from the center of the substrate, less than 10 mm from the center of the substrate, or less than 5 mm from the center of the substrate; or, the first measurement radiation path 282 intersects the top side 258 of the calibration substrate 350 at a radius of about 110 mm to about 130 mm (such as a radius of about 115 mm to about 125 mm, or a radius of about 120 mm).

[0052] A second window 408 is disposed within the second opening 409. The second window 408 is positioned between the second non-contact temperature sensor 278 and the second transmission member 210. Therefore, the second window 408 is positioned between the second non-contact temperature sensor 278 and the calibration substrate 350. The second window 408 is a quartz window and allows radiation from within the processing chamber 130a to pass through it. The second window 408 filters radiation emitted by the calibration substrate 350, allowing only the wavelengths measured by the second non-contact temperature sensor 278 to pass through. Radiation traveling along the second measurement radiation path 288 travels between the bottom side of the base 206 and the second non-contact temperature sensor 278. The second measurement radiation path 288 intersects both the second transmission member 210 and the second window 408. In some examples, the second measurement radiation path 288 may intersect the bottom side of the base 206 at any radial location along the calibration substrate 350. In other examples, the second measurement radiation path 288 intersects the bottom side of the base 206 at a specific radial position, such as a radial position directly below the correction substrate 350 and less than 15 mm from the center of the substrate (e.g., less than 10 mm from the center of the substrate, or less than 5 mm from the center of the substrate), or the second measurement radiation path 288 intersects the bottom side of the base 206 at a radial position directly below the correction substrate 350 and at a radius of about 110 mm to about 130 mm (e.g., about 115 mm to about 125 mm, or about 120 mm).

[0053] A third window 404 is disposed within the third opening 405. The third window 404 is positioned between the light source 274 and the first transmission member 208. Therefore, the third window 404 is positioned between the light source 274 and the correction substrate 350. The third window 404 allows light emitted by the light source 274 to pass through it. Light emitted by the light source 274 and traveling along the first correction beam 286 is positioned between the light source 274 and the top side 358 of the correction substrate 350. The first correction beam 286 passes through both the first transmission member 208 and the third window 404. The first correction beam 286 may intersect the top side 358 of the correction substrate 350 at any radial position along the correction substrate 350. In some examples, the first correction beam 286 intersects the top side 358 of the correction substrate 350 at a distance of less than 15 mm from the center of the substrate (e.g., less than 10 mm from the center of the substrate, or less than 5 mm from the center of the substrate), or the first correction beam 286 intersects the top side 258 of the correction substrate 350 at a radius of about 110 mm to about 130 mm (e.g., about 115 mm to about 125 mm, or about 120 mm).

[0054] The first correction beam 286 intersects the top side 258 of the correction substrate 350 at a distance of less than 5 mm, such as less than 2 mm, and such as less than 1 mm from the point where it intersects with the first measurement radiation path 282. In some embodiments, the first correction beam 286 intersects the top side 258 of the correction substrate 350 at the same radial position as the first measurement radiation path 282. Measuring the correction substrate 350 at the same position allows for direct comparison between temperature measurements and reduces errors compared to measurements at different radial distances from the center of the correction substrate 350.

[0055] A fourth window 407 is disposed within a fourth opening 406 formed through the chamber cover 254. The fourth window 407 is disposed between the edge detector 276 and the first transmission member 208. Therefore, the fourth window 407 is also disposed between the edge detector 276 and the correction substrate 350.

[0056] The light received by the band-edge detector 276 and traveling along the second correction beam 284 is positioned between the band-edge detector 276 and the top side 358 of the correction substrate 350. The second correction beam 284 passes through both the first transmission member 208 and the fourth window 407. The second correction beam 284 intersects the top side 358 of the correction substrate 350 at the same position as the first correction beam 286. The second correction beam 284 is a reflection of the first correction beam 286 leaving the top side 258 of the correction substrate 350. The second correction beam 284 is altered by intersecting the correction substrate 350 and has a reduced wavelength range as measured by the band-edge detector 276.

[0057] A cover 420 is disposed above the chamber cover 254 and surrounds the first non-contact temperature sensor 272, the light source 274, and the edge detector 276. Alternatively, the cover 420 may be disposed individually around each of the first non-contact temperature sensor 272, the light source 274, and the edge detector 276, resulting in multiple covers 420. The cover 420 serves as a support for holding each of the first non-contact temperature sensor 272, the light source 274, and the edge detector 276 in place. The cover 420 prevents radiated energy from escaping the processing chamber 130a and interfering with other equipment.

[0058] The temperature of a portion of the base 206 is measured using a second non-contact temperature sensor 278. The temperature of the portion of the base 206 measured by the second non-contact temperature sensor 278 is the bottom surface temperature and is positioned relative to the position of the calibration substrate 350 measured by the first non-contact temperature sensor.

[0059] Figure 5 According to one embodiment, in Figure 2Method 500 for processing chamber 130a using measuring component 270. Method 500 includes a first operation 502, a second operation 504, a third operation 506, a fourth operation 508, a fifth operation 510, a sixth operation 512, and a seventh operation 514. Each of operations 502, 504, 506, 508, 510, 512, and 514 is performed sequentially, such as... Figure 5 As shown and described in this article.

[0060] Method 500 includes from a box (e.g., box 135) ( Figure 3 The first operation 502 involves transmitting the calibration substrate (such as calibration substrate 350). This occurs in the first and second non-contact temperature sensors 272 and 278. Figure 4 Between each calibration, the calibration substrate 350 is stored in a box. The calibration substrate 350 is transported by a transfer robot 115 within the transfer chamber 110. Figure 1 Remove from the box.

[0061] During the second operation 504, the transfer robot transfers the calibration substrate to a processing chamber, such as processing chamber 130a or any other processing chamber 130b, 130c, 130d. Figure 1 and Figure 2 The calibration substrate passes through the loading port (e.g., loading port 125). Figure 2 The correction substrate is placed on the base and the transfer robot retracts from the processing chamber before being inserted into the processing chamber.

[0062] During the third operation 506, a calibration process is performed. The calibration process includes using a calibration substrate and a measuring component 270. The calibration process of the third operation 506 is described in more detail with reference to the method 600 for calibrating a non-contact temperature sensor.

[0063] Following the third operation 506, the temperature correction process is stopped in the fourth operation 508. Stopping the temperature correction process includes stopping the flow of any process gas introduced into the processing chamber, stopping any heating of the correction substrate, and stopping the measurement of the temperature of the correction substrate.

[0064] After the temperature calibration process is stopped, the calibration substrate is removed from the processing chamber during the fifth operation 510. The calibration substrate is removed by a transfer robot through the loading port. After being removed from the processing chamber, the calibration substrate is inserted back into the cassette.

[0065] After the calibration substrate is removed from the processing chamber, the semiconductor substrate can be transferred into the processing chamber during the sixth operation 512. The semiconductor substrate can be coupled with substrate 202 ( Figure 1Similar to the above. The semiconductor substrate may have a semiconductor device partially formed thereon. The semiconductor substrate is conveyed to the processing chamber by a transfer robot and may have been stored in a cassette or in a separate processing chamber during temperature correction processing.

[0066] Following the sixth operation 512, in which the semiconductor substrate is transferred into the processing chamber, a substrate processing operation is performed during the seventh operation 514. The substrate processing operation may include deposition processing on the top surface of the substrate. The substrate processing operation may further include heating the substrate, introducing at least one process gas, introducing a purge gas, and venting the process gas and purge gas. Multiple substrates are processed during the substrate processing operation.

[0067] The sixth and seventh operations 512 and 514 are repeated such that multiple substrates are processed between each correction process. The sixth and seventh operations 512 and 514 can be repeated such that more than 50 substrates are processed in the processing chamber between each correction process. In some embodiments, the correction process is performed only once every few days, and hundreds of substrates are processed in the processing chamber between each correction process.

[0068] Method 500 is automatically repeated after a preset number of substrates have been processed in the processing chamber or after the processing chamber has reached a preset running time. Method 500 is automated and programmed into a controller, such as controller 250. Method 500 is performed without manual intervention and without disassembling the processing chamber. Calibration of the non-contact temperature sensor using method 500 requires minimal system downtime, simply pausing the processing operation for the duration required for operations 504, 506, 508, and 510.

[0069] Figure 6 Correction according to one implementation method Figure 2 Method 600 for processing non-contact temperature sensors (such as non-contact temperature sensors 272, 278) within a processing chamber. Method 600 is part of the third operation 506 of the method 500 described herein. Calibrating the non-contact temperature sensor includes a first operation 602, a second operation 604, a third operation 606, a fourth operation 608, and a fifth operation 610. Operations 602, 604, 606, 608, and 610 described with respect to method 600 are then performed, as follows: Figure 6 As shown and described in this article.

[0070] The first operation 602 includes performing a calibration process. The calibration process may be similar to substrate processing operation 514 performed on a conventional substrate. The calibration process includes heating the substrate, introducing a process gas, introducing a purge gas, and venting the process gas and purge gas. The process gas may differ from the process gas used in the substrate processing operation of the seventh operation 514 of method 500. The process gas may be a carrier gas, such as H2 gas. The carrier gas helps to match the processing conditions with those found in substrate processing operation 514. The carrier gas helps to match the pressure and airflow found during substrate processing operation 514. However, the process gas does not include reactive gases or deposition / etching gases that may alter the surface of the calibrated wafer. A radiant heating lamp 204 may be used. Figure 2 The processing chamber and the calibration substrate are heated by a heater (not shown) and / or a base heater. The heating of the processing chamber and the calibration substrate is performed gradually, and the temperature increases over time.

[0071] The second operation 604 includes using an edge detector 276 ( Figure 4 The absorption wavelength of the calibration substrate is measured. During the second operation 604, the first calibration beam 286 is emitted by either the light source 274 or the radiant heating lamp 204. When the first calibration beam 286 strikes the top side 358 of the calibration substrate 350 at a first position, a first wavelength range of the first calibration beam 286 is absorbed by the calibration substrate 350, while a second wavelength range of the first calibration beam 286 is reflected as the second calibration beam 284. The second calibration beam 284 enters the band-edge detector 276. The band-edge detector 276 measures the intensity of various wavelengths within the wavelength spectrum of the second calibration beam 284. The band-edge detector 276 maps the intensity measurement of wavelengths within the wavelength range measured by the band-edge detector 276. A broadband light source (such as the light source 274) is used to form the first calibration beam 286, or one or more radiant heating lamps 204 are used to form the first calibration beam 286. The light source 274 can be advantageously used to improve the accuracy of the measurement. The light source 274 can emit a precise range of wavelengths with a set intensity and direction. This makes the height of the light source 274 adjustable and provides improved measurement accuracy. The radiant heating lamp 204 can be used to reduce the number of components mounted on the cover of the processing chamber. The radiant heating lamp 204 emits light within a range similar to that emitted by the light source 274. The radiant heating lamp 204 has controlled intensity. The radiant heating lamp 204 can be used to emit light that is absorbed and reflected by the calibration substrate 350.

[0072] In some embodiments that can be combined with other embodiments, radiation is transmitted through the correction substrate and measured by an edge detector 276 on the side of the correction substrate 350 opposite to the radiation source. This may occur when the base on which the correction substrate 350 is disposed is transparent to light emitted by the light source at the wavelength detected by the edge detector 276, or when the base itself emits radiation after being heated.

[0073] The edge detector 276 can measure the intensity of wavelengths from about 250 nanometers (nm) to about 1350 nm, such as from about 300 nm to about 1300 nm. The light source (light source 274 or radiant heating lamp 204) can emit light with wavelengths from about 250 nm to about 1350 nm, such as from about 300 nm to about 1300 nm.

[0074] An example diagram of intensity measurement at wavelength is shown in Figure 7 It was discovered in the middle. Figure 7 The measurement of wavelength intensity 708 within the wavelength range 706 is shown. The wavelength range 706 measured by the band-edge detector 276 can be the range of wavelengths emitted by the light source 274 that are the same as the first correction beam 286. The wavelength intensity 708 within the wavelength range 706 is mapped to form an intensity curve 702. The intensity curve 702 shows a sharp change between the wavelength range absorbed by the correction substrate 350 (wavelength range with low or near-zero measured intensity) and the wavelength range reflected by the correction substrate 350 (wavelength range with high or near-1 measured intensity). The intensity is measured as a fraction of the intensity of the wavelength emitted by the light source 274. The absorption edge wavelength is set at the midpoint 704 of the transition between the low and high measured intensities of the wavelength range. The absorption edge wavelength is the wavelength from being absorbed by the material to being reflected by the material. The absorption edge wavelength is directly related to the band gap of the material, and the band gap of the material depends on the temperature of the material. As the temperature within an object such as the correction substrate 350 changes, the band gap and therefore the absorption edge wavelength also change. Therefore, the temperature of the material can be measured by measuring the absorption edge wavelength.

[0075] return Figure 6 In the third operation 606, the band-edge detector 276 determines the temperature of the calibration substrate based on the absorption edge wavelength found in the second operation 604. A graph such as correlation temperature graph 800 is used to equate the absorption edge wavelength with temperature. The correlation curve 802 of correlation temperature graph 800 can be found experimentally and correlated with the measured absorption edge wavelength 804. The temperature determined by the band-edge detector 276 using the absorption edge wavelength is advantageous because the determined temperature is not affected by the processing chamber (e.g., ...). Figure 2The aging of any components within the processing chamber 130a) is a factor. The absorption edge wavelength depends on the temperature and the material of the calibration substrate 350, but is minimally affected by the state of the components within the processing chamber. Therefore, since the same calibration substrate 350 is used and stored between each calibration process, accurate and repeatable actual temperature measurements can be performed using the measuring assembly 270 and the edge detector 276. The actual temperature is the temperature measured by the edge detector 276.

[0076] In the fourth operation 608, the temperature of the calibration substrate 350 is determined using the first and second non-contact temperature sensors described herein. The temperatures of the first and second non-contact temperature sensors are determined by measuring the radiation emitted by the calibration substrate 350. In some embodiments, the non-contact temperature sensors are pyrometers. The temperature measured by the first non-contact temperature sensor is a first temperature, or a first measurement temperature. The temperature measured by the second non-contact temperature sensor is a second temperature, or a second measurement temperature. The area of ​​the calibration substrate 350 measured by the first and second non-contact temperature sensors is within approximately 5 mm of the radial position of the area measured by the edge detector. In some embodiments, the area measured by each of the first and second non-contact temperature sensors has the same radius as the area measured by the edge detector. In some embodiments, this area is also referred to as a measurement point.

[0077] In some embodiments, the second and fourth operations 604 and 608 are performed simultaneously to ensure that the measured temperatures are equal. In some embodiments, all operations in the second, third, and fourth operations 604, 606, and 608 are performed simultaneously.

[0078] Over time, the temperature measurements of the first and second non-contact temperature sensors drift due to the aging and wear of components within the processing chamber. Therefore, the temperature measurements of the non-contact temperature sensors should be calibrated periodically. In the fifth operation 610, the non-contact temperature sensors are calibrated using the actual temperature determined by the edge detector. The non-contact temperature sensors can be adjusted to a temperature that matches or is close to (within a predetermined accuracy range) the temperature measured by the edge detector.

[0079] In some embodiments, the method 600 for calibrating the non-contact temperature sensor described herein is performed multiple times at various temperatures, thereby calibrating the first and second non-contact temperature sensors to a wide temperature range. In some embodiments, after method 600 has been repeated within the calibration substrate temperature range, an adjustment algorithm determines the optimal calibration amount for the non-contact temperature sensor. The non-contact temperature sensor can be calibrated by adjusting each measurement by the same amount, or the non-contact temperature sensor can be adjusted on a curve determined by a controller.

[0080] The embodiments disclosed herein relate to the calibration of non-contact temperature sensors within heat treatment chambers (such as epitaxial processing chambers) using edge detectors and absorption edge wavelengths. A calibration substrate is used to better achieve consistent calibration results and to provide the desired absorption edge wavelength for the material forming the calibration substrate.

[0081] Although the foregoing describes embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from its essential scope, the scope of which is defined by the appended claims.

Claims

1. A measurement assembly for calibrating at least one pyrometer within a process chamber, comprising: a band edge calibration assembly, comprising: a light source positioned to emit light; and a band edge detector disposed adjacent to the light source and positioned to receive the light emitted by the light source and reflected from a calibration substrate disposed in an optical path of the light; a first pyrometer disposed proximate the strip edge correction assembly and positioned to receive radiation; and a controller configured to: determine a band edge absorption wavelength from the light received by the band edge detector, wherein the band edge absorption wavelength is a transition wavelength at which the calibration substrate transitions from absorbing radiation of the light emitted by the light source to reflecting the radiation of the light; determine an actual temperature of the calibration substrate using the measured band edge absorption wavelength; determine a first measured temperature of the calibration substrate based on the radiation received by the first pyrometer; and calibrate the first pyrometer by comparing the first measured temperature and the actual temperature.

2. The measurement assembly of claim 1, wherein a shroud is disposed about the light source and the band edge detector.

3. The measurement assembly of claim 1, wherein a first quartz window is disposed adjacent to the light source and a second quartz window is disposed adjacent to the first pyrometer.

4. The measurement assembly of claim 1, wherein the band edge detector is a scanning band edge detector.

5. The measurement assembly of claim 4, wherein the band edge detector is configured to measure light intensity over a range of wavelengths.

6. The measurement assembly of claim 1, wherein the light source is a broadband light source.

7. The measurement assembly of claim 1, further comprising a second pyrometer disposed on an opposite side of the calibration substrate from the band edge calibration assembly and the first pyrometer.

8. An apparatus for processing a substrate, comprising: a chamber body; a substrate support disposed within the chamber body; a first transmissive member disposed above the substrate support and within the chamber body; a second transmissive member disposed below the substrate support and within the chamber body; a lid disposed above the first transmissive member; a plurality of lamps disposed between the first transmissive member and the lid; a calibration substrate disposed on the substrate support; a radiation source positioned to direct radiation onto the calibration substrate or direct the radiation through the calibration substrate; and a band edge calibration assembly disposed on the lid, comprising: a band edge detector positioned to receive the radiation from the radiation source after being reflected off or through the calibration substrate; a first pyrometer disposed adjacent to the band edge calibration assembly; and a controller configured to: irradiate a portion of the calibration substrate using the radiation source; measure a band edge absorption wavelength using the band edge detector, wherein the band edge absorption wavelength is a transition wavelength at which the calibration substrate transitions from absorbing the radiation to reflecting the radiation; measuring a first temperature of the calibration substrate using the first pyrometer; determining an actual temperature of the calibration substrate using the band edge absorption wavelength; and correcting the first pyrometer by comparing the first temperature of the calibration substrate and the actual temperature of the calibration substrate.

9. The apparatus of claim 8, wherein the calibration substrate is a Si, Ge, SiC, GaN, GaAs, AIN, InN, 3C-SiC, or InP material.

10. The apparatus of claim 9, wherein the calibration substrate is a crystalline SiC material.

11. The apparatus of claim 8, further comprising a second pyrometer disposed below the substrate support.

12. The apparatus of claim 8, wherein the radiation source is a light source disposed adjacent to the band edge detector, and a first window is present between the light source and the calibration substrate, and a second window is disposed between the first pyrometer and the calibration substrate.

13. The apparatus of claim 8, wherein the plurality of lamps are infrared radiation lamps.

14. The apparatus of claim 8, further comprising: a transfer chamber coupled to the chamber body; and a load lock chamber coupled to the transfer chamber, wherein the load lock chamber further comprises a cassette for substrate storage.

15. A method of calibrating a pyrometer within a processing chamber, comprising: transferring a calibration substrate onto a substrate support within a chamber body; irradiating a portion of the calibration substrate using a light source; measuring a band edge absorption wavelength using a band edge detector, wherein the band edge absorption wavelength is a transition wavelength at which the calibration substrate transitions from absorbing radiation emitted by the light source irradiating the calibration substrate to reflecting the radiation; measuring a first temperature of the calibration substrate using a first pyrometer; determining an actual temperature of the calibration substrate using the band edge absorption wavelength; correcting the first pyrometer by comparing the first temperature of the calibration substrate and the actual temperature of the calibration substrate; and transferring the calibration substrate out of the chamber body.

16. The method of claim 15, further comprising, prior to the irradiating, performing a substrate processing operation, the substrate processing operation comprising: heating the calibration substrate with a plurality of lamps; and introducing a process gas into the chamber body.

17. The method of claim 15, wherein the measuring the band edge absorption wavelength comprises measuring intensities of various wavelengths within a wavelength spectrum of a calibration beam.

18. The method of claim 15, wherein the calibration substrate is stored in a cassette prior to being transferred into the chamber body and after being transferred out of the chamber body.

19. The method of claim 18, wherein a plurality of substrates are processed within the chamber body after the calibration substrate is transferred out of the chamber body.

Images