An on-chip microfluidic GaN HEMT power device cooling integrated component and its preparation method

Abstract

The present invention discloses an integrated cooling assembly for an on-chip microfluidic GaN HEMT power device, comprising an integrated interconnect medium and a microfluidic drive module. The microfluidic drive module is provided with an alignment recessed area, and the on-chip microfluidic GaN HEMT power device is placed in the alignment recessed area; the integrated interconnect medium is located below the on-chip microfluidic GaN HEMT power device and is provided in the alignment recessed area; during preparation, an upper suction protection pressure plate is also included and provided above the on-chip microfluidic GaN HEMT power device. After preparation, the upper suction protection pressure plate is removed. The preparation method of the present invention introduces an upper suction protection pressure plate, interconnect medium design, and process control to achieve high-quality integrated interconnection between the on-chip microfluidic GaN HMET power device and the microfluidic drive module. The present invention can solve the problems of poor interface quality and integrated interface leakage during the integration process, improve sealing reliability, and enhance the high-power characteristics of GaN microwave devices.

Description

Technical Field

[0001] The present invention relates to a GaN HEMT power device, and in particular to an on-chip micro-flow GaN HEMT power device cooling integrated component and a preparation method thereof. Background Art

[0002] The new third-generation semiconductor power devices, represented by GaN, are developing towards smaller size and higher power. However, with the increasing integration density, the inherent heat accumulation effect of GaN power devices has significantly increased, leading to higher junction temperatures and a significant degradation of their performance and reliability. Thermal effects have become a key factor in the current development of GaN power devices. Therefore, addressing this heat accumulation issue is a hot topic in GaN power device research. GaN device thermal management technology based on on-chip microfluidics to increase heat dissipation involves introducing microfluidics near the chip's internal heat source area. Through solid-liquid heat transfer, heat from this area is rapidly transferred away from the chip's heat source, preventing internal heat accumulation. This technical approach has become one of the primary methods for chip-level thermal management of GaN power devices. However, existing integration technologies struggle to achieve high-reliability sealing between on-chip microfluidic GaN HEMT power devices and microfluidic driver modules. During the application of on-chip microfluidic GaN HEMT (High Electron Mobility Transistor) power devices, a series of integration reliability issues have arisen, including damage to the device active area, difficulty aligning microchannels at the integration interface, and fluid leakage at the integration interface. Therefore, there is an urgent need for a high-reliability integration method for the application of on-chip microfluidic GaN HEMT power devices to meet the high-reliability sealing requirements of on-chip microfluidic GaN HEMT power devices and microfluidic drive modules, and to realize the high-reliability application of on-chip microfluidic thermal management technology. Summary of the Invention

[0003] Purpose of the invention: The purpose of the present invention is to provide an on-chip microfluidic GaN HEMT power device cooling integrated assembly and a preparation method thereof, which can meet the requirements of reliable sealing between the on-chip microfluidic GaN HEMT power device and the microfluidic drive module and improve the reliability of thermal management.

[0004] Technical Solution: The cooling integrated assembly of the present invention includes an integrated interconnect medium and a microfluidic drive module. The microfluidic drive module is provided with an alignment recessed area, and the on-chip microfluidic GaN HEMT power device is placed in the alignment recessed area. The integrated interconnect medium is located below the on-chip microfluidic GaN HEMT power device and is disposed in the alignment recessed area. During the manufacturing process, the integrated interconnect medium also includes an upper suction protection pressure plate disposed above the on-chip microfluidic GaN HEMT power device. After the manufacturing is completed, the upper suction protection pressure plate is removed.

[0005] The upper suction protection pressure plate is provided with an inner cavity and a vacuum exhaust nozzle, the active area of ​​the on-chip microfluidic GaN HEMT power device is provided in the inner cavity, and the cavity formed by the inner cavity and the active area is connected to the vacuum exhaust nozzle;

[0006] The integrated interconnect medium is provided with a first drain channel / outlet channel, and the microfluidic driving module is provided with a second drain channel / outlet channel. The first drain channel / outlet channel and the second drain channel / outlet channel are respectively connected to the third drain channel / outlet channel on the on-chip microfluidic GaN HEMT power device.

[0007] Furthermore, the outer length and width of the upper suction protection pressure plate are the same as the length and width of the microfluidic GaN HEMT power device on the chip, and a vacuum exhaust nozzle is provided on one side of the upper suction protection pressure plate, and the vacuum exhaust nozzle is connected to the inner cavity;

[0008] The length and width of the inner cavity are the same as those of the active area, and the depth of the inner cavity is in the range of 200um-300um.

[0009] Furthermore, the length and width of the alignment recessed region are the same as those of the integrated region of the on-chip microfluidic GaN HEMT power device; the depth h1 of the alignment recessed region ranges from 50 μm to 250 μm, and h1-h2≥20 μm, where h2 is the thickness of the on-chip microfluidic GaN HEMT power device.

[0010] Furthermore, the length and width of the integrated interconnect medium are the same as those of the aligned concave region, and the thickness of the integrated interconnect medium is in the range of 10-30 μm.

[0011] Furthermore, the integrated interconnect medium is made of gold-tin or gold-gold soldering material.

[0012] Furthermore, the cross-sectional dimensions of the first flow guide channel / outlet channel are the same as the cross-sectional dimensions of the second flow guide channel / outlet channel on the bottom plane of the aligned concave area.

[0013] The method for preparing the above-mentioned on-chip microfluidic GaN HEMT power device cooling integrated assembly comprises the following steps:

[0014] S1, placing the upper suction protection pressure plate above the micro-flow GaN HEMT power device on the chip, and connecting the vacuum exhaust nozzle to the vacuum system to ensure that the upper suction protection pressure plate generates suction and sucks the micro-flow GaN HEMT power device on the chip; at the same time, ensure that the periphery of the upper suction protection pressure plate and the periphery of the micro-flow GaN HEMT power device on the chip are completely aligned;

[0015] S2, placing the integrated interconnect medium in the aligned concave area of ​​the microfluidic driving module;

[0016] S3, aligning and placing the on-chip microfluidic GaN HEMT power device within the alignment recessed area of ​​the microfluidic driving module and above the integrated interconnect dielectric;

[0017] S4, controlling the temperature of the microfluidic drive module and simultaneously pressurizing the suction protection pressure plate to complete the integration of the microfluidic GaN HEMT power device and the microfluidic drive module under temperature and pressure conditions that meet the requirements of the interconnect medium welding process;

[0018] S5, remove the upper suction protection pressure plate.

[0019] Compared with the prior art, the present invention has the following significant effects:

[0020] 1. During the preparation process, the present invention provides a process component, namely, an upper suction protection pressure plate, which is connected to an external vacuum system. Under vacuum conditions, the active area of ​​the microfluidic GaN HEMT power device on the chip is protected, thereby solving the problem of device damage during the integration process.

[0021] 2. By designing an alignment concave area on the integration surface of the microfluidic drive module, high-precision alignment of the microfluidic channels within the chip is achieved during the integration process, solving the problem of the inability to monitor and control the alignment of the microfluidic channels;

[0022] 4. By introducing integrated interconnect medium design and controlling the temperature and pressure process parameters, high-quality integrated interconnection between on-chip microfluidic GaN HMET power devices and microfluidic drive modules is achieved, solving the problems of poor interface quality and integrated interface leakage during the integration process, improving the reliability of the sealing, and enhancing the high-power characteristics of GaN microwave devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 This is a schematic structural diagram of the preparation process of the cooling integrated assembly of the present invention;

[0024] Figure 2 This is a structural diagram of the upward suction protection pressure plate;

[0025] Figure 3 Schematic diagram of the on-chip microfluidic GaN HMET power device;

[0026] Figure 4 Schematic diagram of the microfluidic driving module;

[0027] Figure 5 Schematic diagram of the integrated interconnect medium between the on-chip microfluidic GaN HMET power device and the microfluidic driving module. DETAILED DESCRIPTION

[0028] The present invention will be described in further detail below with reference to the accompanying drawings and specific implementations.

[0029] like Figure 1 As shown, the cooling integrated assembly of the present invention includes an on-chip microfluidic GaN HMET power device active area protection design: composed of a suction protection pressure plate a and an on-chip microfluidic GaN HMET power device b; an on-chip microfluidic high-precision alignment design: composed of the on-chip microfluidic GaN HMET power device b, an integrated interconnection medium c, and a microfluidic drive module d; and an integrated interconnection design for the on-chip microfluidic GaN HMET power device and the microfluidic drive module: composed of the integrated interconnection medium c and the microfluidic drive module d. Ultimately, highly reliable integration of the on-chip microfluidic GaN HEMT power device and the microfluidic drive assembly is achieved.

[0030] like Figure 1 and Figure 2 As shown, the active area protection design for the on-chip microfluidic GaN HEMT power device of the present invention is as follows: the length and width of the inner cavity a1 of the upper suction protection pressure plate a coincide with the length and width of the active area b1 of the on-chip microfluidic GaN HMET power device b, and the depth of the inner cavity a1 is 200-300 μm. A vacuum nozzle a2 is provided on one side of the upper suction protection pressure plate a to provide vacuum suction within the inner cavity, effectively protecting the active area b1 of the on-chip microfluidic GaN HMET power device from damage during integration. The outer length and width of the upper suction protection pressure plate a coincide with the length and width of the on-chip microfluidic GaN HMET power device b, and the overall thickness is within the range of 800-1000 μm, ensuring the provision of pressure conditions at the integration interface during the integration process. The upper suction protection pressure plate can be made of low thermal conductivity materials or resin-based materials to ensure a temperature gradient across the integration surface.

[0031] like Figure 1 and Figure 4 As shown, the high-precision alignment design of the microfluidic chip of the present invention is as follows: an alignment concave area d1 is designed on the integration surface of the microfluidic driving module d, and the length and width of the alignment concave area d1 are completely consistent with the back integration area size of the microfluidic GaN HMET power device b on the chip (i.e., the length and width of the microfluidic GaN HMET power device on the chip, as shown in FIG. Figure 3 The alignment of the second channel / outlet d2 in the microfluidic driver module d and the third channel / outlet b2 in the on-chip microfluidic GaN HMET power device b is highly precise, ensuring continuity with the inlet and outlet channels b3. This avoids difficulties in microchannel alignment caused by monitoring blind spots. The depth of the alignment recessed area d1 is designed to be between 50 and 250 μm, more than 20 μm smaller than the thickness of the on-chip microfluidic GaN HMET power device b, ensuring pressure control during integration.

[0032] like Figure 1 and Figure 5The present invention utilizes an integrated interconnect between the on-chip microfluidic GaN HMET power device and the microfluidic driver module. The thickness of the integrated interconnect dielectric c ranges from 10 to 30 μm. Excessive thickness can lead to flow channel blockage, while excessive thinness can cause poor bonding surface quality and leakage. The length and width of the integrated interconnect dielectric c match the dimensions of the alignment recessed area d1 of the microfluidic driver module d. The dimensions of the first drainage / outflow channel c1 on the integrated interconnect dielectric c match the cross-sectional dimensions of the second drainage / outflow channel d2 in the microfluidic driver module d, located on the bottom plane of the alignment recessed area d1, ensuring precise alignment of the microfluidic channels within the integration.

[0033] The integrated preparation process of the on-chip microfluidic GaN HEMT power device of the present invention comprises the following steps:

[0034] 1) First, place the upper suction protection pressure plate a above the on-chip microfluidic GaN HEMT power device b, and ensure that the upper suction protection pressure plate a is connected to the external vacuum system. Then, the vacuum system controls the upper suction protection pressure plate a to generate suction to suck the on-chip microfluidic GaN HMET power device b, so that the periphery of the upper suction protection pressure plate a and the periphery of the on-chip microfluidic GaN HMET power device are completely aligned.

[0035] 2) Place the integrated interconnection medium c in the aligned concave area d1 of the microfluidic driving module d. The interconnection medium can be made of traditional welding materials such as gold-tin or gold-gold.

[0036] 3) The on-chip microfluidic GaN HMET power device controlled by the upper suction protection pressure plate a is aligned and placed in the alignment recessed area d1 of the microfluidic driving module d, above the integrated interconnect medium c.

[0037] 4) The temperature range of the microfluidic driver module d is controlled to be 200°C-400°C. At the same time, the upper suction protection pressure plate a is pressurized in the range of 0-5N. Under the temperature and pressure conditions that meet the welding process requirements of the integrated interconnect medium c, the highly reliable integration of the on-chip microfluidic GaN HEMT power device and the microfluidic driver module d is completed.

[0038] 5) Remove the upper suction protection pressure plate a.

[0039] Example

[0040] The components of an integrated cooling assembly for on-chip microfluidic GaN HEMT power devices are designed as follows:

[0041] (1) On-chip microfluidic GaN HEMT power device active area protection design

[0042] like Figure 2As shown, an upward suction protection pressure plate a is designed based on the dimensions of the on-chip microfluidic GaN HEMT device b. This ensures that the length and width of the inner cavity are consistent with the active area b1 of the on-chip microfluidic GaN HMET power device b, both measuring 5 x 3 mm. The inner cavity depth is 200 μm. A vacuum nozzle a2 is installed on one side of the upward suction protection pressure plate a to provide vacuum suction within the inner cavity, effectively protecting the active area of ​​the on-chip microfluidic GaN HMET power device b from damage during integration.

[0043] The outer length and width of the upper suction protection pressure plate a and the length and width of the on-chip microfluidic GaN HMET power device b are consistent, which is 7*6mm. The overall thickness is 800um, which ensures the integration interface pressure conditions during the integration process. The material is made of epoxy resin.

[0044] (2) On-chip microfluidic high-precision alignment design

[0045] like Figure 4 As shown, an alignment recessed area d1 is designed on the integration surface of the microfluidic driver module d. Its length and width are identical to the dimensions of the integrated area on the backside of the on-chip microfluidic GaN HMET power device b, measuring 7 x 6 mm. This ensures high-precision alignment between the second drainage channel / outflow channel d2 in the microfluidic driver module d and the third drainage channel / outflow channel b2 in the on-chip microfluidic GaN HMET power device b, avoiding difficulties in microchannel alignment due to monitoring blind spots. The depth of the alignment recessed area d1 is designed to be 100 μm, 50 μm less than the 150 μm thickness of the on-chip microfluidic GaN HMET power device b, ensuring pressure control during the integration process.

[0046] (3) Integrated interconnection design of on-chip microfluidic GaN HMET power devices and microfluidic drive modules

[0047] like Figure 5 As shown, an integrated interconnect dielectric c, 20 μm thick and made of conventional gold-tin solder, is used between the on-chip microfluidic GaN HMET power device b and the microfluidic driver module d. The length and width of the integrated interconnect dielectric c match the alignment recessed area d1 of the microfluidic driver d, measuring 7 x 6 mm. A first flow channel c1 is provided on the integrated interconnect dielectric c, matching the dimensions of the second flow channel d2 in the microfluidic driver module to ensure precise alignment of the microfluidic channels.

[0048] (4) A method for preparing an on-chip microfluidic GaN HEMT power device heat dissipation channel, the process comprising the following steps:

[0049] Step 1: Place an upper suction protection pressure plate a above an on-chip microfluidic GaN HEMT power device b and ensure that the upper suction protection pressure plate a is connected to an external vacuum system. Then, the vacuum system controls the upper suction protection pressure plate a to generate suction to suck the on-chip microfluidic GaN HMET power device b, with the periphery of the upper suction protection pressure plate a and the periphery of the on-chip microfluidic GaN HMET power device b fully aligned.

[0050] Step 2: Place the integrated interconnection medium c in the aligned recessed area d1 of the microfluidic driving module d;

[0051] Step 3: align and place the on-chip microfluidic GaN HMET power device b controlled by the upper suction protection pressure plate a into the aligned concave area b1 of the microfluidic driving module b, above the integrated interconnect medium c.

[0052] In step 4, the temperature of the microfluidic driver module d is controlled. The interconnect medium used is gold-tin solder, and the integration temperature is set to 320°C. Simultaneously, the upper suction protection pressure plate a is pressurized within a pressure range of 0.3-0.8N. Under the temperature and pressure conditions that meet the interconnect medium soldering process requirements, the highly reliable integration of the on-chip microfluidic GaN HEMT power device b and the microfluidic driver module d is completed.

[0053] Step 5: Remove the upper suction protection pressure plate a.

[0054] In summary, the present invention achieves active area protection of on-chip microfluidic GaN HEMT power devices, high-precision on-chip microfluidic alignment, and high-quality integrated interconnection between on-chip microfluidic GaN HMET power devices and microfluidic drive modules through the design of an upper suction protection pressure plate, an alignment concave area on the integrated surface of the microfluidic drive module, an integrated interconnection dielectric design, and process control. Ultimately, this solves the problem of high-reliability sealing application between on-chip microfluidic GaN HEMT power devices and microfluidic drive modules.

[0055] The descriptions not mentioned in the specific embodiments of the present invention belong to the well-known technologies in the art and can be implemented with reference to the well-known technologies.

[0056] The present invention has been verified through repeated experiments and has achieved satisfactory trial results.

[0057] The above specific implementation methods and examples provide concrete support for the technical concept of a high-reliability integration method for on-chip microfluidic GaN HEMT power device applications proposed in the present invention and are not intended to limit the scope of protection of the present invention. Any equivalent changes or modifications made based on the technical concept proposed in the present invention shall still fall within the scope of protection of the technical solution of the present invention.

Claims

1. An on-chip microfluidic GaN HEMT power device cooling integrated assembly, characterized in that: The invention comprises an integrated interconnect medium (c) and a microfluidic driving module (d), wherein the microfluidic driving module (d) is provided with an alignment recessed area (d1), and an on-chip microfluidic GaN HEMT power device (b) is placed in the alignment recessed area (d1); the integrated interconnect medium (c) is located below the on-chip microfluidic GaN HEMT power device (b) and is provided in the alignment recessed area (d1); The preparation process also includes an upward suction protection pressure plate (a) located above the on-chip microfluidic GaN HEMT power device (b). After the preparation is completed, the upward suction protection pressure plate (a) is removed. The upper suction protection pressure plate (a) is provided with an inner cavity (a1) and a vacuum exhaust nozzle (a2); the active region (b1) of the on-chip microfluidic GaN HEMT power device (b) is provided in the inner cavity (a1); and the cavity formed by the inner cavity (a1) and the active region (b1) is communicated with the vacuum exhaust nozzle (a2); A first drainage channel (c1) is provided on the integrated interconnect medium (c), and a second drainage channel (d2) is provided in the microfluidic driving module (d), wherein the first drainage channel (c1) and the second drainage channel (d2) are respectively connected to a third drainage channel (b2) on the on-chip microfluidic GaN HEMT power device (b); The outer length and width of the upper suction protection pressure plate (a) are the same as the length and width of the on-chip microfluidic GaN HEMT power device (b), and a vacuum exhaust nozzle (a2) is provided on one side of the upper suction protection pressure plate (a), and the vacuum exhaust nozzle (a2) is connected to the inner cavity (a1); The length and width of the inner cavity (a1) are the same as those of the active area (b1), and the depth of the inner cavity (a1) ranges from 200um to 300um; The length and width of the alignment concave region (d1) are the same as the length and width of the integrated region of the on-chip microfluidic GaN HEMT power device (b); the depth h1 of the alignment concave region (d1) ranges from 50 μm to 250 μm, and h1-h2 is ≥ 20 μm, wherein h2 is the thickness of the on-chip microfluidic GaN HEMT power device (b); The length and width of the integrated interconnect medium (c) are the same as those of the aligned concave area (d1), and the thickness of the integrated interconnect medium (c) is in the range of 10um to 30um; The cross-sectional size of the first drainage channel (c1) is the same as the cross-sectional size of the second drainage channel (d2) on the bottom plane of the aligned concave area (d1).

2. The on-chip microfluidic GaN HEMT power device cooling integrated assembly according to claim 1, characterized in that: The integrated interconnect medium (c) is made of gold-tin or gold-gold soldering material.

3. The method for preparing an on-chip microfluidic GaN HEMT power device cooling integrated assembly according to any one of claims 1 to 2, characterized in that: The following steps are involved: S1, place the upper suction protection pressure plate (a) above the on-chip microfluidic GaN HEMT power device (b), and connect the vacuum exhaust nozzle (a2) to the vacuum system to ensure that the upper suction protection pressure plate (a) generates suction and sucks the on-chip microfluidic GaN HEMT power device (b); at the same time, ensure that the periphery of the upper suction protection pressure plate (a) and the periphery of the on-chip microfluidic GaN HEMT power device (b) are completely aligned; S2, placing the integrated interconnect medium (c) into the aligned recessed area (d1) of the microfluidic driving module (d); S3, aligning and placing the on-chip microfluidic GaN HEMT power device (b) within the alignment recessed area (d1) of the microfluidic driver module (d) and above the integrated interconnect dielectric (c); S4, controlling the temperature of the microfluidic drive module (d) and simultaneously pressurizing the suction protection pressure plate (a), completing the integration of the on-chip microfluidic GaN HEMT power device (b) and the microfluidic drive module (d) under temperature and pressure conditions that meet the requirements of the interconnect medium welding process; S5, remove the upper suction protection pressure plate (a).

Images