Silicon wafer transmission device
By using elastic support components to connect the adsorption head assembly and the central skeleton in the silicon wafer transmission device, the problem of fragmentation during the silicon wafer transmission process is solved, high-precision, no fragmentation and adsorption are achieved, processing and installation costs are reduced, and production efficiency and lithography machine performance are improved.
Patent Information
- Application Number
- CN202110731346.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-06-29
- Publication Date
- 2025-09-02
- Estimated Expiration
- 2041-06-29
AI Technical Summary
Existing silicon wafer transmission devices are prone to fragmentation during transmission, mainly due to the rigid connection of the adsorption head assembly, the micron-level accuracy requirements are difficult to meet, and slight vibrations and fluctuations can easily cause silicon wafer damage.
The elastic support component is used to connect the adsorption head assembly and the central skeleton to provide elastic support force along the Z direction, realize the flexible connection of the adsorption head assembly, and buffer the adsorption pressure fluctuations through the elastic support component to avoid high-frequency vibrations being transmitted to the silicon wafer.
It realizes fragmentation-free adsorption silicon wafers, reduces processing and installation costs, improves production efficiency, meets the needs of precise transmission and high-precision positioning, and improves the performance of the lithography machine.
Smart Images

Figure CN115547901B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of semiconductor manufacturing equipment, and in particular to a silicon wafer transmission device. Background Art
[0002] The dual worktable is the core equipment of a lithography machine. Its primary function is to meet the positioning requirements of silicon wafers or reference plates during the parallel processing of the lithography machine's measurement and exposure processes. The dual worktable system adopts a coarse-fine stacked motion structure, with the coarse motion module for long-stroke motion and the fine motion module for high-precision motion.
[0003] The Epin (e-pin or pin) component is mounted on the coarse motion module substrate and connected to the coarse and fine motion module stators via a mechanical interface. It is responsible for transferring silicon wafers between the dual worktables. Typically, the Epin component consists of a central skeleton and multiple suction head assemblies distributed around the central skeleton. The suction head assembly includes a needle holder, needle rods, and suction heads. The needle holder is fixedly connected to the central skeleton to ensure the long-term stability of each needle rod and suction head.
[0004] To meet the exposure requirements of silicon wafers, the horizontality of the upper surface of the silicon wafer needs to meet micron-level precision requirements. Therefore, the coplanarity of the end faces of each adsorption head in contact with the lower surface of the silicon wafer also needs to meet micron-level precision requirements. However, due to the high structural strength of the adsorption head assembly, very high requirements are placed on micron-level processing and adjustment. Once this micron-level high-precision requirement is exceeded, the silicon wafer can easily break when the adsorption head adsorbs the silicon wafer. In addition, if the adsorption pressure of the silicon wafer fluctuates slightly, the actuator and adsorption head assembly will also transmit this fluctuation to the silicon wafer. When high-frequency vibration occurs, it is also very easy to cause the silicon wafer to break. Summary of the Invention
[0005] The object of the present invention is to provide a silicon wafer transmission device to solve the technical problem that the existing silicon wafer transmission device easily causes silicon wafers to break during the transmission process.
[0006] The silicon wafer transfer device provided by the present invention includes a base, an Epin component installed on the base, and a driving component for driving the Epin component to move along the Z direction, the Epin component includes a central skeleton and a plurality of adsorption head assemblies arranged around the central skeleton, wherein the central skeleton is transmission-connected to the driving component, the adsorption head assembly is connected to the central skeleton via an elastic support component, and the elastic support component is configured to provide elastic support force along the Z direction to the adsorption head assembly.
[0007] Furthermore, the elastic support component includes a first spring piece, which includes a first annular portion and a plurality of first branch portions fixedly connected to the first annular portion, wherein the first annular portion is fixedly connected to the central skeleton, and the plurality of first branch portions are arranged at circumferential intervals along the first annular portion, and the plurality of adsorption head assemblies are respectively installed on the plurality of first branch portions in a one-to-one correspondence.
[0008] Furthermore, the elastic support component also includes a second spring piece, the second spring piece includes a second annular portion and a plurality of second branch portions fixedly connected to the second annular portion, wherein the second annular portion is fixedly connected to the central skeleton, and the second annular portion is opposite to the first annular portion along the Z direction; the plurality of second branch portions are arranged at circumferential intervals along the second annular portion, and the plurality of second branch portions are respectively opposite to the plurality of first branch portions along the Z direction, and the plurality of second branch portions are respectively connected one-to-one with the plurality of adsorption head assemblies.
[0009] Furthermore, the central skeleton includes a central disk and a plurality of limit blocks fixedly connected to the central disk, and the plurality of limit blocks are arranged at intervals along the circumference of the central disk, wherein the first annular portion and the second annular portion are respectively fixed on both sides of the central disk along the Z direction; the first branch portion and the second branch portion are respectively arranged on both sides of the limit block along the Z direction, and there are intervals between the first branch portion and the limit block and between the second branch portion and the limit block.
[0010] Furthermore, the silicon wafer transmission device also includes a first pressure ring, which is configured to fix the first annular portion to the central skeleton; and / or, the silicon wafer transmission device also includes a second pressure ring, which is configured to fix the second annular portion to the central skeleton.
[0011] Furthermore, the first annular portion is detachably fixedly connected to the central skeleton, and the first branch portion is detachably fixedly connected to the corresponding adsorption head assembly; and / or, the second annular portion is detachably fixedly connected to the central skeleton, and the second branch portion is detachably fixedly connected to the corresponding adsorption head assembly.
[0012] Furthermore, the silicon wafer transmission device also includes a guide shaft, which is fixedly connected to the base. The central disk of the central skeleton is fixedly provided with a guide sleeve, and the guide sleeve is slidably mounted on the guide shaft along the Z direction, and there is an air film between the guide sleeve and the guide shaft.
[0013] Furthermore, the silicon wafer transmission device also includes an anti-rotation component, which is configured to prevent the central skeleton from rotating around the Z axis.
[0014] Furthermore, the anti-rotation assembly includes a first side block, a second side block and an intermediate block, wherein the first side block and the second side block are fixedly connected to the base, and the first side block and the second side block are arranged at intervals along the circumference of the central skeleton, the intermediate block is located between the first side block and the second side block, and the intermediate block is fixedly connected to the central skeleton; there is an air film between the first side block and the intermediate block and between the second side block and the intermediate block.
[0015] Furthermore, the silicon wafer transmission device also includes a measuring component, which includes a reading head and a grating scale, wherein the reading head is installed on the base, and the grating scale is installed on the central skeleton. The reading head cooperates with the grating scale to obtain the position of the adsorption head assembly along the Z direction.
[0016] Furthermore, the driving component includes a coil mover assembly and a magnetic steel stator assembly, the coil mover assembly is installed on the central skeleton, and the magnetic steel stator assembly is installed on the micro-motion module.
[0017] Furthermore, the plurality of adsorption head assemblies share a common gas circuit.
[0018] The beneficial effects brought about by the silicon wafer transfer device of the present invention are:
[0019] A silicon wafer transfer device is provided, which mainly comprises a base, an Epin component, and a drive component. The Epin component is mounted on the base, the drive component is configured to drive the Epin component to move along the Z direction, and the Epin component includes a central frame and multiple suction head assemblies, which are arranged around the central frame. The Epin component is in transmission connection with the drive component via the central frame, and the suction head assemblies are connected to the central frame via elastic support components, which are used to provide elastic support force to the suction head assemblies along the Z direction.
[0020] When using this silicon wafer transfer device to transfer silicon wafers, the drive component drives the Epin component to move in the Z direction. In other words, the central skeleton and the multiple suction head assemblies arranged around the central skeleton move in the Z direction to achieve the required precise movement of the silicon wafer. When each suction head assembly moves to the surface of the silicon wafer, the elastic support component enables each suction head assembly to simultaneously maintain contact with the silicon wafer surface, thereby achieving silicon wafer adsorption.
[0021] By setting an elastic support component in the silicon wafer transmission device, the original rigid connection between each adsorption head assembly and the central skeleton is converted into a flexible connection. Therefore, when each adsorption head assembly is used to adsorb the silicon wafer, the elastic force of the elastic support component can be used to adaptively adjust the end face position of each adsorption head assembly, so that the end face coplanarity of each adsorption head assembly meets the high-precision requirements adapted to the silicon wafer, avoiding the situation where the silicon wafer is broken during the adsorption process due to insufficient processing and adjustment accuracy of each adsorption head assembly. At the same time, the setting can also buffer the slight fluctuations caused by the adsorption pressure of the silicon wafer to prevent the mover and the adsorption head assembly from transmitting the fluctuations to the silicon wafer, thereby effectively avoiding the breakage of the silicon wafer when high-frequency vibration occurs. This setting meets the needs of precise transmission and high-precision positioning of silicon wafers, thereby improving the performance of the lithography machine.
[0022] In addition, through the above-mentioned setting, the silicon wafer transfer device no longer needs to meet the micron-level processing and adjustment requirements, and can achieve non-fragmentation adsorption of silicon wafers, thereby reducing processing and adjustment costs and improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are merely embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.
[0024] Figure 1 A schematic structural diagram of a silicon wafer transfer device provided in an embodiment of the present invention;
[0025] Figure 2 A schematic structural diagram of an Epin component of a silicon wafer transfer device provided in an embodiment of the present invention;
[0026] Figure 3 A top view of the structure of a silicon wafer transfer device provided in an embodiment of the present invention;
[0027] Figure 4 for Figure 3 AA section view in;
[0028] Figure 5 A schematic diagram of the partial structure of a silicon wafer transfer device provided in an embodiment of the present invention.
[0029] Description of reference numerals:
[0030] 100-base; 200-Epin component; 300-first pressure ring; 400-second pressure ring; 500-guide shaft; 600-anti-rotation assembly; 700-measuring assembly; 800-coil mover assembly;
[0031] 210-central skeleton; 220-adsorption head assembly; 230-elastic support component; 240-hose;
[0032] 211-center plate; 212-limiting block; 213-guide sleeve;
[0033] 231 - first spring piece; 232 - first annular portion; 233 - first branch portion; 234 - second spring piece; 235 - second annular portion; 236 - second branch portion;
[0034] 510-stopper; 520-air flotation adjustment sleeve;
[0035] 610-first side block; 620-second side block; 630-middle block;
[0036] 710-Reading head mounting base;
[0037] 810-coil frame; 820-coil winding. DETAILED DESCRIPTION
[0038] The Epin (e-pin or pin) component is mounted on the coarse motion module baseplate and connects to the coarse and fine motion module stators via a mechanical interface. It performs wafer transport on the dual worktable. In a dual-worktable system, when loading a wafer, the Epin component of the fine motion module receives the wafer from the wafer fork manipulator and transfers it to the suction cup. When unloading a wafer, the Epin component lifts the wafer and transfers it to the wafer fork manipulator. The specific loading and unloading process is as follows.
[0039] The wafer transfer and loading process is as follows: wafer fork → Epin assembly → worktable. The wafer transfer system's fork removes the wafer from the cassette and transfers it to the dual-worktable transfer position. The Epin assembly is then energized with vacuum and rises to the wafer's lower surface. Once the Epin assembly has fully absorbed the wafer, the fork is released from the vacuum, transferring the wafer from the fork to the Epin assembly. When the Epin assembly drives the wafer to its upper limit, the loading robot's fork withdraws. The Epin assembly lowers the wafer, and once the wafer rests on the suction cup, the cup is energized with vacuum, releasing the vacuum from the Epin assembly. This transfers the wafer from the Epin assembly to the suction cup, and the worktable begins a new round of measurement and exposure.
[0040] The silicon wafer transfer process is as follows: workpiece stage → Epin assembly → wafer fork. After exposure is complete, the workpiece stage drives the silicon wafer to the lowering position. The Epin assembly rises to the upper surface of the suction cup and holds the silicon wafer. Compressed air is then introduced between the suction cup and the silicon wafer to break the vacuum between them, allowing the suction cup to break the vacuum and transfer the silicon wafer to the Epin assembly. The Epin assembly then drives the silicon wafer up to its upper limit, and the wafer fork of the wafer transfer device moves to the lowering position. The Epin assembly then lowers the silicon wafer to the transfer position, applying vacuum to the wafer fork. The vacuum is then broken by the Epin assembly, and the silicon wafer is transferred from the Epin assembly to the wafer fork. The fork then transports the wafer to a cassette or to the next process step.
[0041] Although the above setting realizes the transmission of silicon wafers, since the silicon wafers are thin, their thickness is usually only 0.8 mm, and they have low toughness and high brittleness, and the adsorption head assembly 220 in the Epin component has high rigidity, it is very easy to cause the silicon wafers to break when adsorbing them.
[0042] In order to make the above-mentioned objects, features and advantages of the present invention more clearly understood, the following detailed description of the specific embodiments of the present invention is given in conjunction with the accompanying drawings. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.
[0043] Figure 1 This is a schematic diagram of the structure of the silicon wafer transfer device provided in this embodiment. Figure 2 This is a schematic structural diagram of the Epin component 200 of the silicon wafer transfer device provided in this embodiment. Figure 1 and Figure 2 As shown, this embodiment provides a silicon wafer transfer device, including a base 100, an Epin component 200 installed on the base 100 and a driving component for driving the Epin component 200 to move along the Z direction, the Epin component 200 includes a central skeleton 210 and a plurality of adsorption head assemblies 220 arranged around the central skeleton 210, specifically, the central skeleton 210 is transmission-connected to the driving component, and the adsorption head assembly 220 is connected to the central skeleton 210 via an elastic support component 230, wherein the elastic support component 230 is configured to provide elastic support force along the Z direction to the adsorption head assembly 220.
[0044] When using this silicon wafer transfer device to transfer silicon wafers, the Epin component 200 moves along the Z direction under the driving action of the driving component. In other words, the central skeleton 210 and the multiple suction head assemblies 220 arranged around the central skeleton 210 move along the Z direction to achieve the requirement of accurately moving the silicon wafer. When each suction head assembly 220 moves to the surface of the silicon wafer, under the action of the elastic support component 230, each suction head assembly 220 can simultaneously maintain contact with the silicon wafer surface, thereby achieving the suction of the silicon wafer.
[0045] By providing an elastic support component 230 in the silicon wafer transfer device, the original rigid connection between each adsorption head assembly 220 and the central skeleton 210 is converted into a flexible connection, so that when each adsorption head assembly 220 is used to adsorb the silicon wafer, the elastic force of the elastic support component 230 can be used to adaptively adjust the end face position of each adsorption head assembly 220, so that the end face coplanarity of each adsorption head assembly 220 meets the high-precision requirements adapted to the silicon wafer, thereby avoiding the situation where the silicon wafer is broken during the adsorption process due to insufficient processing and adjustment accuracy of each adsorption head assembly 220. At the same time, the setting can also buffer the slight fluctuations caused by the adsorption pressure of the silicon wafer, so as to prevent the mover and the adsorption head assembly 220 from transmitting the fluctuations to the silicon wafer, thereby effectively avoiding the breakage of the silicon wafer when high-frequency vibration occurs. This setting meets the needs of precise transmission and high-precision positioning of silicon wafers, thereby improving the performance of the lithography machine.
[0046] In addition, through the above-mentioned setting, the silicon wafer transfer device no longer needs to meet the micron-level processing and adjustment requirements, and can achieve non-fragmentation adsorption of silicon wafers, thereby reducing processing and adjustment costs and improving production efficiency.
[0047] Please continue to refer to Figure 1 and Figure 2 In this embodiment, the Epin component 200 includes three adsorption head assemblies 220, which are arranged in a triangle. This arrangement of three-point adsorption of the silicon wafer ensures the stability of the silicon wafer adsorption.
[0048] Please continue to refer to Figure 2 In this embodiment, the elastic support component 230 may include a first spring piece 231. Specifically, the first spring piece 231 includes a first annular portion 232 and a plurality of first branch portions 233 fixedly connected to the first annular portion 232, wherein the first annular portion 232 is fixedly connected to the central skeleton 210, and the plurality of first branch portions 233 are arranged at circumferential intervals along the first annular portion 232, and the plurality of adsorption head assemblies 220 are respectively installed on the plurality of first branch portions 233 in a one-to-one correspondence.
[0049] When the wafer transfer device is used to absorb a silicon wafer, the provision of the first spring piece 231 provides each absorption component with an elastic force along the Z direction, thereby effectively meeting the current flatness requirements of the silicon wafer. This configuration of the elastic support member 230 as the first spring piece 231 offers a simple structure, low cost, and reliable elastic force.
[0050] Preferably, in this embodiment, the first branch portion 233 and the first annular portion 232 are integrally formed. This configuration not only improves the structural strength of the first elastic piece 231 but also reduces the manufacturing cost of the first elastic piece 231. Specifically, the first elastic piece 231 can be a sheet metal part.
[0051] Please continue to refer to Figure 2 In this embodiment, the elastic support component 230 may further include a second spring piece 234. Specifically, the second spring piece 234 includes a second annular portion 235 and a plurality of second branch portions 236 fixedly connected to the second annular portion 235, wherein the second annular portion 235 is fixedly connected to the central skeleton 210, and the second annular portion 235 is opposite to the first annular portion 232 along the Z direction; the plurality of second branch portions 236 are arranged at circumferential intervals along the second annular portion 235, and the plurality of second branch portions 236 are respectively opposite to the plurality of first branch portions 233 along the Z direction, and the plurality of second branch portions 236 are respectively connected to the plurality of adsorption head assemblies 220 one by one.
[0052] By setting a second spring piece 234 opposite to the first spring piece 231 along the Z direction, and connecting the first spring piece 231 and the second spring piece 234 to the adsorption head assembly 220 at the same time, not only the elasticity of the adsorption head assembly 220 along the Z direction is guaranteed, so that the end face of the adsorption head assembly 220 can adapt well to the flatness of the silicon wafer, but also the relative stability of the adsorption head assembly 220 is guaranteed, and to a certain extent, damage to the silicon wafer caused by excessive shaking of the adsorption head assembly 220 is avoided.
[0053] Preferably, in this embodiment, the second branch portion 236 and the second annular portion 235 are integrally formed. This configuration not only improves the structural strength of the second elastic piece 234 but also reduces the manufacturing cost of the second elastic piece 234. Specifically, the second elastic piece 234 can be a sheet metal part.
[0054] It should be noted that, during actual use, the staff can select the spring material with appropriate strength and rigidity according to the weight of the adsorption head assembly 220 and the moving speed and acceleration required when transferring the silicon wafer.
[0055] In other embodiments, the elastic support component 230 may include a flexible hinge, which is used to connect the adsorption head assembly 220 to the central skeleton 210, thereby providing the adsorption head assembly 220 with elastic support force along the Z direction.
[0056] Figure 3 A top view of the structure of the silicon wafer transfer device provided in this embodiment, Figure 4 for Figure 3 Please continue to refer to the AA section view in Figure 1 , and combined with Figure 3 and Figure 4 In this embodiment, the central skeleton 210 includes a central disk 211 and a plurality of limit blocks 212 fixedly connected to the central disk 211. Specifically, the plurality of limit blocks 212 are arranged at intervals along the circumference of the central disk 211, wherein the first annular portion 232 and the second annular portion 235 are respectively fixed to both sides of the central disk 211 along the Z direction; the first branch portion 233 and the second branch portion 236 are respectively arranged on both sides of the limit block 212 along the Z direction, and there are gaps between the first branch portion 233 and the limit block 212 and between the second branch portion 236 and the limit block 212.
[0057] By setting up a central skeleton 210 of this structural form, on the one hand, a reliable installation carrier is provided for the elastic support component 230. On the other hand, the limit block 212 can be used to limit the downward movement of the first spring piece 231 and the upward movement of the second spring piece 234, so as to limit the swing of the adsorption head assembly 220 along the Z direction to a certain range, thereby avoiding the silicon wafer from being broken due to the large swing amplitude of the adsorption head assembly 220.
[0058] Please continue to refer to Figure 1 and Figure 4 In this embodiment, the silicon wafer transfer device may further include a first pressure ring 300 and a second pressure ring 400, wherein the first pressure ring 300 is configured to fix the first annular portion 232 to the central frame 210, and the second pressure ring 400 is configured to fix the second annular portion 235 to the central frame 210. Specifically, the first pressure ring 300 fixes the first annular portion 232 to the central disk 211 of the central frame 210, and the second pressure ring 400 fixes the second annular portion 235 to the central disk 211 of the central frame 210.
[0059] By setting a first pressure ring 300 to fix the first annular portion 232, and setting a second pressure ring 400 to fix the second annular portion 235, the first annular portion 232 and the second annular portion 235 can fit well to the center disk 211, that is, the first spring clip 231 and the second spring clip 234 can fit well to the center disk 211, avoiding warping and deformation of the first spring clip 231 at the first annular portion 232 and the second spring clip 234 at the second annular portion 235, thereby ensuring the reliability of the first spring clip 231 and the second spring clip 234 in providing elastic support force to the adsorption head assembly 220.
[0060] In other embodiments, the first pressing ring 300 and the second pressing ring 400 may not be provided, so that the first elastic piece 231 and the second elastic piece 234 are directly fixed to the central disk 211 .
[0061] Please continue to refer to Figure 1In this embodiment, the first annular portion 232 is detachably fixedly connected to the central frame 210, and the first branch portion 233 is detachably fixedly connected to the corresponding adsorption head assembly 220; the second annular portion 235 is detachably fixedly connected to the central frame 210, and the second branch portion 236 is detachably fixedly connected to the corresponding adsorption head assembly 220. In other words, the first spring piece 231 is detachably connected to the central frame 210 and the corresponding adsorption head assembly 220, and the second spring piece 234 is detachably connected to the central frame 210 and the corresponding adsorption head assembly 220.
[0062] By setting the first spring piece 231 to be detachably connected to the central skeleton 210 and the corresponding adsorption head assembly 220, and setting the second spring piece 234 to be detachably connected to the central skeleton 210 and the corresponding adsorption head assembly 220, after the silicon wafer transfer device has been used for a period of time, when the first spring piece 231 and / or the second spring piece 234 are greatly deformed and cannot provide elastic supporting force, the first spring piece 231 and / or the second spring piece 234 can be removed and replaced with a new first spring piece 231 and / or the second spring piece 234 to ensure the reliability of the elastic supporting force provided to the adsorption head assembly 220, thereby ensuring the working reliability of the silicon wafer transfer device of this embodiment.
[0063] Please continue to refer to Figure 1 and Figure 4 In this embodiment, the driving component may include a coil mover assembly 800 and a magnetic steel stator assembly (not shown in the figure). Specifically, the coil mover assembly 800 is installed on the central skeleton 210, and the magnetic steel stator assembly is installed on the micro-motion module. This arrangement of the driving component can achieve effective control of the movement stroke of the Epin component 200, thereby achieving high-precision control of the Epin component 200, and thus ensuring the reliability of silicon wafer transmission. Among them, the coil mover assembly 800 includes a coil skeleton 810 and a coil winding 820. The coil skeleton 810 is fixedly arranged on the base 100, and the coil winding 820 is fixedly arranged on the coil skeleton 810.
[0064] Figure 5 This is a partial structural diagram of the silicon wafer transfer device provided in this embodiment. Please continue to refer to Figure 1 、 Figure 4 and Figure 5 In this embodiment, the silicon wafer transmission device may further include a guide shaft 500. Specifically, the guide shaft 500 is fixedly connected to the base 100, and the central disk 211 of the central skeleton 210 is fixedly provided with a guide sleeve 213, wherein the guide sleeve 213 is slidably mounted on the guide shaft 500 along the Z direction, and an air film is provided between the guide sleeve 213 and the guide shaft 500.
[0065] When the driving component drives the Epin component 200 to move, the guide sleeve 213 of the central skeleton 210 will slide on the guide shaft 500, and the Epin component 200 will be guided by the cooperation between the guide sleeve 213 and the guide shaft 500 to ensure the straightness of the central skeleton 210 moving along the Z direction and its verticality requirements with the base 100.
[0066] Moreover, by setting an air film between the guide sleeve 213 and the guide shaft 500, the air film is used to lubricate the relative sliding of the guide sleeve 213 and the guide shaft 500. On the one hand, since there is no mechanical contact between the central skeleton 210 and the guide shaft 500, there is no dynamic or static friction when the two move relative to each other, and the friction generated by the air film lubrication is very small and can be ignored. On the other hand, it avoids the situation in which the traditional method of using grease for lubrication causes particles to contaminate the silicon wafer due to the volatilization of grease, reduces the damage to the silicon wafer, and thus improves the qualified wafer rate of lithography.
[0067] Please continue to refer to Figure 4 and Figure 5 In this embodiment, the guide shaft 500 includes an air flotation adjustment sleeve 520 that is fixed thereto. Specifically, the air flotation adjustment sleeve 520 is provided with an air hole that is angled to its axial direction, and the guide shaft 500 is provided with an air channel along its axis, which is connected to the above-mentioned air hole, so that when compressed air is introduced, an air film is formed between the outer wall of the air flotation adjustment sleeve 520 and the inner wall of the guide sleeve 213, thereby achieving the above-mentioned purpose of having an air film between the guide shaft 500 and the guide sleeve 213.
[0068] Please continue to refer to Figure 1 、 Figure 4 and Figure 5 In this embodiment, a stopper 510 is fixedly mounted on the end of the guide shaft 500 away from the base 100. Specifically, the stopper 510 is configured to limit the maximum travel of the center frame 210 in the Z direction. The provision of the stopper 510 limits the upward travel of the center frame 210, effectively preventing the center frame 210 from detaching from the guide shaft 500 due to excessive travel.
[0069] In this embodiment, the silicon wafer transfer device may further include an anti-rotation assembly 600. Specifically, the anti-rotation assembly 600 is configured to prevent the central frame 210 from rotating about the Z axis. This arrangement prevents the adsorption head assembly 220 from rotating, thereby ensuring the accuracy of the adsorption head assembly 220's movement along the Z axis and, in turn, ensuring the reliability of silicon wafer transfer.
[0070] Please continue to refer to Figure 1 and Figure 5Specifically, the anti-rotation assembly 600 includes a first side block 610, a second side block 620, and a middle block 630. The first side block 610 and the second side block 620 are both fixedly connected to the base 100 and spaced apart along the circumference of the central frame 210. The middle block 630 is located between the first side block 610 and the second side block 620 and is fixedly connected to the central frame 210. Air films are formed between the first side block 610 and the middle block 630, and between the second side block 620 and the middle block 630. The middle block 630 is fixedly connected to a limit block 212 of the central frame 210.
[0071] During the movement of the Epin component 200 in the Z direction, the first side block 610 is used to rotate the middle block 630 in a clockwise direction ( Figure 5 The second side block 620 is used to limit the rotation of the middle block 630 around the counterclockwise direction ( Figure 5 The rotation of the intermediate block 630 (when viewed from a top view) is restricted, so that the intermediate block 630 can only move in the Z direction between the first side block 610 and the second side block 620. Furthermore, by providing air films between the first side block 610 and the intermediate block 630, and between the second side block 620 and the intermediate block 630, the friction between the intermediate block 630 and the first and second side blocks 610 and 620 is reduced, ensuring smooth movement of the intermediate block 630, and thus ensuring smooth movement of the Epin component 200. Furthermore, noise generated during movement of the Epin component 200 is reduced.
[0072] Moreover, the setting of the first side block 610 and the second side block 620 can also limit the freedom of movement of the middle block 630 along the X direction and the Y direction, thereby preventing the adsorption head assembly 220 from moving along the X direction and the Y direction.
[0073] Please continue to refer to Figure 1 In this embodiment, the silicon wafer transfer device may further include a measuring component 700. Specifically, the measuring component 700 includes a reading head and a grating ruler, wherein the reading head is installed on the base 100, and the grating ruler is installed on the central skeleton 210. The reading head and the grating ruler cooperate to obtain the position of the adsorption head component 220 along the Z direction.
[0074] During the operation of the silicon wafer transfer device, as the adsorption head assembly 220 moves in the Z direction, the grating scale moves synchronously. During this process, the reading head reads the data on the grating scale and can accurately know the current height position of the adsorption head assembly 220, thereby facilitating the control of the adsorption process of the adsorption head assembly 220.
[0075] Specifically, the reading head can be electrically connected to a controller (not shown) of the silicon wafer transport device. At the same time, the coil winding 820 is also electrically connected to the controller of the silicon wafer transport device. When the reading head reads the scale of the grating ruler, the data is fed back to the controller. The controller calculates the current height position of the adsorption head assembly 220. Thereafter, the controller can adjust the height of the adsorption head assembly 220 by controlling the current flowing into the coil winding 820.
[0076] It should be noted that how to perform feedback adjustment on the adsorption head assembly 220 based on the data read by the reading head is an existing technology well known to those skilled in the art. This embodiment does not make any improvements to this, so it will not be described in detail.
[0077] Please continue to refer to Figure 5 In this embodiment, the base 100 is fixedly provided with a reading head mounting seat 710 , and the reading head is fixedly mounted on the reading head mounting seat 710 .
[0078] Please continue to refer to Figure 1 and Figure 3 In this embodiment, in addition to being mechanically connected through the first spring piece 231 and the second spring piece 234, the three adsorption head assemblies 220 are also connected to a vacuum air circuit through a hose 240, and the interface on one of the adsorption head assemblies 220 is connected to the vacuum air circuit, thereby realizing simultaneous ventilation or air cut-off to the three adsorption head assemblies 220, so as to realize synchronous control of the adsorption operations of the three adsorption head assemblies 220.
[0079] By connecting the three adsorption head assemblies 220 to the same vacuum air path, it is not only convenient to control the three adsorption head assemblies 220 and ensure the synchronization of the adsorption operation, but also the manufacturing cost of the silicon wafer transfer device of this embodiment can be reduced.
[0080] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.
[0081] Finally, it should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprises" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article, or device that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprises a ..." does not exclude the presence of other identical elements in the process, method, article, or device that includes the element.
[0082] In the above embodiments, the descriptions of directions such as “upper”, “lower”, and “side” are all based on the drawings.
[0083] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not limited to the embodiments shown herein but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A silicon wafer transfer device, characterized in that: The invention comprises a base (100), an Epin component (200) mounted on the base (100), and a driving component for driving the Epin component (200) to move along the Z direction, wherein the Epin component (200) comprises a central skeleton (210) and a plurality of adsorption head assemblies (220) arranged around the central skeleton (210), wherein the central skeleton (210) is in transmission connection with the driving component, and the adsorption head assembly (220) is connected to the central skeleton (210) via an elastic support component (230), and the elastic support component (230) is configured to move the adsorption head assembly (220) to the central skeleton (210). The component (220) provides an elastic supporting force along the Z direction; the elastic supporting component (230) includes a first spring piece (231), the first spring piece (231) includes a first annular portion (232) and a plurality of first branch portions (233) fixedly connected to the first annular portion (232), wherein the first annular portion (232) is fixedly connected to the central skeleton (210), and the plurality of first branch portions (233) are arranged at intervals along the circumference of the first annular portion (232), and the plurality of adsorption head components (220) are respectively installed on the plurality of first branch portions (233) in a one-to-one correspondence.
2. The silicon wafer transfer device according to claim 1, wherein: The elastic support component (230) also includes a second spring piece (234), and the second spring piece (234) includes a second annular portion (235) and a plurality of second branch portions (236) fixedly connected to the second annular portion (235), wherein the second annular portion (235) is fixedly connected to the central skeleton (210), and the second annular portion (235) is opposite to the first annular portion (232) along the Z direction; the plurality of second branch portions (236) are arranged at intervals along the circumference of the second annular portion (235), and the plurality of second branch portions (236) are respectively opposite to the plurality of first branch portions (233) along the Z direction, and the plurality of second branch portions (236) are respectively connected to the plurality of adsorption head assemblies (220) in a one-to-one correspondence.
3. The silicon wafer transfer device according to claim 2, wherein: The central skeleton (210) includes a central disk (211) and a plurality of limit blocks (212) fixedly connected to the central disk (211), wherein the plurality of limit blocks (212) are arranged at intervals along the circumference of the central disk (211), wherein the first annular portion (232) and the second annular portion (235) are respectively fixed to both sides of the central disk (211) along the Z direction; the first branch portion (233) and the second branch portion (236) are respectively arranged on both sides of the limit block (212) along the Z direction, and there is a gap between the first branch portion (233) and the limit block (212) and between the second branch portion (236) and the limit block (212).
4. The silicon wafer transfer device according to claim 2, wherein: The silicon wafer transmission device further includes a first pressure ring (300), which is configured to fix the first annular portion (232) to the central skeleton (210); and / or, the silicon wafer transmission device further includes a second pressure ring (400), which is configured to fix the second annular portion (235) to the central skeleton (210).
5. The silicon wafer transfer device according to claim 2, wherein: The first annular portion (232) is detachably fixedly connected to the central skeleton (210), and the first branch portion (233) is detachably fixedly connected to the corresponding adsorption head assembly (220); and / or, the second annular portion (235) is detachably fixedly connected to the central skeleton (210), and the second branch portion (236) is detachably fixedly connected to the corresponding adsorption head assembly (220).
6. The silicon wafer transfer device according to any one of claims 1 to 5, characterized in that: The silicon wafer transmission device further comprises a guide shaft (500), wherein the guide shaft (500) is fixedly connected to the base (100), and a guide sleeve (213) is fixedly provided on the central disk (211) of the central skeleton (210), wherein the guide sleeve (213) is slidably sleeved on the guide shaft (500) along the Z direction, and an air film is provided between the guide sleeve (213) and the guide shaft (500).
7. The silicon wafer transfer device according to any one of claims 1 to 5, characterized in that: The silicon wafer transmission device further comprises an anti-rotation component (600), wherein the anti-rotation component (600) is configured to prevent the central skeleton (210) from rotating around the Z axis.
8. The silicon wafer transfer device according to claim 7, characterized in that: The anti-rotation assembly (600) includes a first side block (610), a second side block (620) and an intermediate block (630), wherein the first side block (610) and the second side block (620) are both fixedly connected to the base (100), and the first side block (610) and the second side block (620) are arranged at intervals along the circumference of the central skeleton (210), the intermediate block (630) is located between the first side block (610) and the second side block (620), and the intermediate block (630) is fixedly connected to the central skeleton (210); and there is an air film between the first side block (610) and the intermediate block (630) and between the second side block (620) and the intermediate block (630).
9. The silicon wafer transfer device according to any one of claims 1 to 5, characterized in that: The silicon wafer transfer device also includes a measuring component (700), and the measuring component (700) includes a reading head and a grating ruler, wherein the reading head is installed on the base (100), and the grating ruler is installed on the central skeleton (210), and the reading head cooperates with the grating ruler to obtain the position of the adsorption head component (220) along the Z direction.
10. The silicon wafer transfer device according to any one of claims 1 to 5, characterized in that: The driving component comprises a coil mover assembly (800) and a magnetic steel stator assembly, wherein the coil mover assembly (800) is mounted on the central frame (210), and the magnetic steel stator assembly is mounted on the micro-motion module.
11. The silicon wafer transfer device according to any one of claims 1 to 5, characterized in that: The plurality of adsorption head assemblies (220) share a common gas circuit.
Citation Information
Patent Citations
Silicon wafer adsorption unit and silicon wafer transmission device
CN112151435A
Silicon wafer clamping mechanism
CN211788955U
Suction head, suction device and conveying device
JP2002137184A