Substrate processing apparatus

Abstract

The present application relates to a kind of substrate processing equipment, substrate processing equipment is equipped with inner cavity, substrate processing equipment includes: wallboard and outer plate.Wallboard is used to form the boundary of inner cavity;Outer plate is set to the side of wallboard away from inner cavity;Gap is provided between outer plate and wallboard, to form the flow space for passing through first cooling fluid.Due to the fact that wallboard forms the boundary surface of inner cavity, when substrate receives processing treatment, a part of heat generated in inner cavity is transferred to wallboard.When first cooling fluid is passed into flow space, first cooling fluid can produce heat transfer with the side of wallboard towards outer plate.Due to the fact that first cooling fluid flows through the gap between wallboard and outer plate, so that first cooling fluid has larger contact area with wallboard, effectively improve the efficiency of first cooling fluid absorbing heat and the efficiency of inner cavity cooling, so that inner cavity is not easily raised to higher temperature, guarantee the stable operation of substrate process treatment, prevent the processing of substrate from being affected.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of substrate processing, and in particular to a substrate processing device. BACKGROUND

[0002] A substrate may need to be treated in a variety of ways before it is shipped, in order to meet the requirements of an application. For example, glass as a substrate, before it is shipped, is treated to roughen the surface of the glass, in order to produce an anti-glare effect on the surface of the glass.

[0003] In some process steps, the processing of the substrate will generate a lot of heat, causing the temperature of the processing device to rise. For example, in the process of using plasma to sputter the surface of the glass, the processing device is prone to absorbing heat and rising in temperature. The cooling efficiency of conventional processing devices is limited, and the processing device is prone to rising to a high temperature, making it difficult to operate stably and affecting the processing of the substrate. SUMMARY

[0004] Therefore, it is necessary to provide a substrate processing device to address the problem of limited cooling efficiency of the processing device and the processing device being prone to rising to a high temperature.

[0005] A substrate processing device is provided with an inner cavity, comprising:

[0006] a wall plate for forming the boundary of the inner cavity; and

[0007] an outer plate arranged on the side of the wall plate away from the inner cavity; a gap is provided between the outer plate and the wall plate to form a flow space for passing a first cooling fluid.

[0008] The substrate processing device described above, when the substrate needs to be processed, the substrate is in the inner cavity of the substrate processing device. Since the wall plate forms the boundary surface of the inner cavity, when the substrate is processed, a part of the heat generated in the inner cavity is transferred to the wall plate. Since the outer plate is arranged on the side of the wall plate away from the inner cavity, and the flow space is formed between the outer plate and the wall plate by the gap, when the first cooling fluid flows into the flow space, the first cooling fluid can transfer heat to the side of the wall plate facing the outer plate, the heat of the wall plate is transferred to the first cooling fluid, so that the temperature of the wall plate is lowered, and finally the first cooling fluid absorbs the heat in the inner cavity, so that the temperature in the inner cavity is lowered. Since the first cooling fluid flows through the gap between the wall plate and the outer plate, the first cooling fluid has a large contact area with the wall plate, effectively improving the efficiency of the first cooling fluid absorbing heat and the cooling efficiency of the inner cavity, so that the inner cavity is not prone to rising to a high temperature, ensuring stable operation of the process treatment of the substrate and preventing the processing of the substrate from being affected.

[0009] In one embodiment, the substrate processing equipment further includes a baffle disposed within the flow space, the length direction of the baffle being at least partially parallel to the flow direction of the first cooling fluid within the flow space; the baffle is used to guide the first cooling fluid toward the wall plate.

[0010] In one embodiment, the outer side of the stop bar is formed with threads.

[0011] In one embodiment, the outer diameter of the baffle is 60% to 100% of the distance between the wall panel and the outer panel.

[0012] In one embodiment, the flow space includes multiple horizontal flow sections and multiple deflection sections, each of which is capable of carrying the first cooling fluid; the multiple horizontal flow sections are arranged in a distributed manner; one end of each horizontal flow section flows through one of the deflection sections to another horizontal flow section, and the other end flows through another deflection section to yet another horizontal flow section.

[0013] In one embodiment, a partition strip is further included; the two sides of the partition strip abut against the wall panel and the outer panel respectively; the partition strip is used to separate the gap between the wall panel and the outer panel, and at least one advection section is formed between the two partition strips.

[0014] In one embodiment, the outer panel is provided with an input port and an output port; the input port and the output port are respectively connected to the circulation space.

[0015] In one embodiment, the substrate processing equipment is provided with an external flow channel for introducing a second cooling fluid; the external flow channel is located on the side of the outer plate facing away from the wall plate.

[0016] In one embodiment, a tubular shell is connected to the outer plate; the outer flow channel is formed between the inner wall surface of the tubular shell and the outer surface of the outer plate.

[0017] In one embodiment, the system further includes a plurality of guide tubes housed within the cavity; the guide tubes are disposed between the wall panel and the processing station. Attached Figure Description

[0018] Figure 1 This is a perspective view of a substrate processing apparatus according to an embodiment of the present invention;

[0019] Figure 2 for Figure 1 A three-dimensional schematic diagram of the substrate processing equipment shown from another angle;

[0020] Figure 3 for Figure 2 An exploded view of the substrate processing equipment shown;

[0021] Figure 4 for Figure 2 An exploded view of the substrate processing equipment shown from another angle;

[0022] Figure 5 for Figure 2 The exploded view of the substrate processing equipment shown from another angle shows the panel hidden.

[0023] Figure 6 for Figure 2 The exploded view of the substrate processing equipment shown from another angle shows the panel hidden.

[0024] Figure 7 for Figure 6 Enlarged view of point A on the substrate processing equipment shown;

[0025] Figure 8 for Figure 6 A partial schematic diagram of the casing in the substrate processing equipment shown.

[0026] Reference numerals: 100, substrate processing equipment; 20, wall panel; 30, outer panel; 31, flow space; 311, horizontal flow section; 312, deflection section; 313, inlet; 314, outlet; 32, tube shell; 321, outer flow channel; 33, frame; 40, panel; 41, first port; 42, second port; 50, baffle; 60, spacer; 61, heavy-duty section; 62, extension section; 70, lead pipe. Detailed Implementation

[0027] To make the above-mentioned objects, features, and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of the present invention. However, the present invention can be practiced in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0028] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0029] In addition, the terms "first", "second", etc. are used herein only to describe different instances, and are not used to denote or imply relative importance or a number of indicated technical features. Thus, features defined with "first", "second", etc. can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise explicitly specified and limited.

[0030] In the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting", "fixing" and the like should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise explicitly limited. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0031] In the present application, unless otherwise explicitly specified and limited, the first feature is "on" or "under" the second feature, which can be direct contact between the first and second features, or indirect contact between the first and second features through an intermediate medium. Moreover, the first feature "above", "over" and "on" the second feature can be directly above or obliquely above the first feature, or only indicate that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "under" and "under" the second feature can be directly below or obliquely below the first feature, or only indicate that the horizontal height of the first feature is less than that of the second feature.

[0032] It should be noted that when an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there can be a middle element. When an element is referred to as "connected to" another element, it can be directly connected to the other element or there can be a middle element. The terms "vertical", "horizontal", "up", "down", "left", "right" and similar expressions used herein are for illustrative purposes only and are not the only embodiment.

[0033] The technical solutions provided by the embodiments of the present application are described below with reference to the accompanying drawings.

[0034] In combination with Figures 1 to 8 As shown in the drawings, the present application provides a substrate processing equipment 100.

[0035] In some embodiments, the substrate processing apparatus 100 is capable of performing a substrate transfer process, a substrate cleaning process, or a substrate etching process. In particular, the substrate processing apparatus 100 can have one or more chambers. The substrate can be subjected to a cleaning process, an etching process, or other process after entering the chamber. When the substrate processing apparatus 100 has one chamber, the substrate processing apparatus 100 can perform a substrate transfer process to move the substrate into or out of the chamber. When the substrate processing apparatus 100 has multiple chambers, the substrate processing apparatus 100 can also perform a substrate transfer process to move the substrate into another chamber while moving the substrate out of one chamber.

[0036] Further, the substrate can include glass, or other materials having properties similar to glass. The substrate can be in a plate or sheet form. More specifically, in a cleaning process, the substrate processing apparatus 100 can perform a plasma cleaning process on a surface of the substrate to be processed using an inert gas source or other cleaning gas source. More specifically, in an etching process, the substrate processing apparatus 100 can perform a plasma etching process on a surface of the substrate to be processed using an inert gas source and a fluorine-containing gas source or other etching gas source.

[0037] In some embodiments, the substrate processing apparatus 100 includes a moving device for performing a substrate transfer process to move the substrate relative to the chamber. In particular, the moving device includes a plurality of rotatable guide rollers and a driving device for rotating the guide rollers, and a carrier connected to one or more substrates is carried by the guide rollers, and the carrier moves in the chamber under the action of the guide rollers when the guide rollers rotate.

[0038] In some embodiments, the substrate processing apparatus 100 includes a plasma generating device for generating plasma. In one embodiment, the plasma is used for a cleaning process on a surface of the substrate. In another embodiment, the plasma is used for an etching process on a surface of the substrate.

[0039] In some embodiments, as shown in Figure 1 , Figure 3 and Figure 6 , the substrate processing apparatus 100 includes a wall plate 20 and an outer plate 30. The wall plate 20 is used to form a boundary of the chamber. The outer plate 30 is arranged on a side of the wall plate 20 facing away from the chamber. A gap is provided between the outer plate 30 and the wall plate 20 to form a flow space 31 for passing a first cooling fluid.

[0040] When the substrate needs to be processed, the substrate is in the inner cavity of the substrate processing apparatus 100. Since the wall plate 20 forms the boundary of the inner cavity, when the substrate is being processed, a portion of the heat generated in the inner cavity is transferred to the wall plate 20. Since the outer plate 30 is disposed on the side of the wall plate 20 facing away from the inner cavity, and the gap between the wall plate 20 and the outer plate 30 forms the flow space 31, when the first cooling fluid flows into the flow space 31, the first cooling fluid can transfer heat to the side of the wall plate 20 facing the outer plate 30. The heat of the wall plate 20 is transferred to the first cooling fluid, so that the temperature of the wall plate 20 is lowered, and finally the first cooling fluid absorbs the heat in the inner cavity, so that the temperature in the inner cavity is lowered. Since the first cooling fluid flows through the gap between the wall plate 20 and the outer plate 30, the first cooling fluid has a large contact area with the wall plate 20, effectively improving the efficiency of the first cooling fluid absorbing heat and the efficiency of cooling the inner cavity, so that the inner cavity is not easily raised to a high temperature, ensuring stable operation of the process of the substrate, preventing the processing of the substrate from being affected.

[0041] In some embodiments, in combination with Figure 1 and Figure 2 , the wall plate 20 is used to form part of the boundary of the inner cavity. Specifically, the substrate processing apparatus 100 further comprises a panel 40 for forming other boundaries of the inner cavity.

[0042] In one embodiment, in combination with Figure 1 , the panel 40 is used to form the side wall of the inner cavity, and the panel 40 is provided with a first opening 41 communicating with the inner cavity. The first openings 41 are arranged in pairs, and the first openings 41 are used for the carrier to enter and exit the inner cavity. More specifically, the substrate processing apparatus 100 further comprises a cover plate for covering the first opening 41, so that the inner cavity can be in a vacuum environment. In one embodiment, the panel 40 is provided with a second opening 42 communicating with the inner cavity, and the second opening 42 is used to install a plasma generating device. More specifically, the plasma generating device is embedded in the second opening 42, and the plasma generating device is sealed to the edge of the second opening 42, so that the inner cavity can be in a vacuum environment. In some embodiments, the panel 40 can also be used to form the upper boundary or the lower boundary of the inner cavity. More specifically, the inner side of the wall plate 20 is arranged opposite to one of the panels 40.

[0043] In some embodiments, in combination with Figure 6 and Figure 7As shown, the substrate processing apparatus 100 further comprises a baffle 50 disposed in the flow space 31, the length direction of the baffle 50 is at least partially parallel to the flow direction of the first cooling fluid in the flow space 31. The baffle 50 is used to direct the first cooling fluid to impact against the wall plate 20. Specifically, since the baffle 50 is disposed in the flow space 31, when the first cooling fluid flows in the flow space 31, the first cooling fluid can contact the baffle 50. Since the length direction of the baffle 50 is at least partially parallel to the flow direction of the first cooling fluid, the baffle 50 can reduce the resistance to the first cooling fluid, preventing the speed of the first cooling fluid from excessively decreasing and hindering the first cooling fluid from quickly taking away heat. Since the baffle 50 directs the first cooling fluid to impact against the wall plate 20 towards the side of the outer plate 30, the first cooling fluid can be more fully contacted by the wall plate 20, thereby facilitating the first cooling fluid to fully absorb the heat on the wall plate 20 and improving the heat dissipation efficiency of the wall plate 20.

[0044] In some embodiments, the baffle 50 is configured to direct the first cooling fluid to impact against the wall plate 20. Figure 7 As shown, the outer side of the baffle 50 is formed with threads. Specifically, when the first cooling fluid flows in the flow space 31, a portion of the first cooling fluid flows to the position close to the outer side of the baffle 50. The threads on the outer side of the baffle 50 can change the direction of the nearby first cooling fluid, so that the direction of the first cooling fluid is adjusted from parallel to the length direction of the baffle 50 to inclined relative to the length direction of the baffle 50. When the first cooling fluid flows along the length direction of the baffle 50, the flow path of the first cooling fluid is relatively short, so that the first cooling fluid stays in the flow space 31 for a relatively short time, resulting in that the first cooling fluid can only absorb limited heat during the process of passing through the flow space 31. Since the threads on the outer side of the baffle 50 are spirally distributed along the length direction of the baffle 50, when the first cooling fluid flows to the position close to the threads, the first cooling fluid is guided by the gaps between the threads to flow towards the surface of the wall plate 20 or the surface of the outer plate 30, thereby increasing the actual flow speed of the first cooling fluid near the surface of the wall plate 20 or the surface of the outer plate 30, and facilitating the first cooling fluid to fully absorb the heat on the wall plate 20. In addition, since the first cooling fluid does not flow completely along the direction parallel to the surface of the wall plate 20 or the surface of the outer plate 30, the flow path length of the first cooling fluid in the flow space 31 is increased, and the staying time of the first cooling fluid in the flow space 31 is improved, thereby improving the cooling effect of the inner cavity.

[0045] In some other embodiments, a plurality of outwardly protruding protruding particle portions can be disposed on the outer side of the baffle 50, and the gaps between adjacent protruding particle portions can be used to guide the first cooling fluid, so that the first cooling fluid passing through the protruding particle portions is guided to flow towards the surface of the wall plate 20.

[0046] In some embodiments, the outer diameter of the baffle 50 is 60% to 100% of the distance between the wall panel 20 and the outer panel 30. Because the outer diameter of the baffle 50 is within a relatively suitable range, the baffle 50 can significantly guide the flow direction of the first cooling fluid, allowing the first cooling fluid to flow towards the surface of the wall panel 20 under the guidance of the baffle 50. Specifically, the outer diameter of the baffle 50 is 60%, 65%, 70%, 75%, 80%, 85%, 90%, or 95% of the distance between the wall panel 20 and the outer panel 30. In one embodiment, the outer diameter of the baffle 50 is 80% of the distance between the wall panel 20 and the outer panel 30, thus maintaining a certain gap between the baffle 50 and the wall panel 20 or the outer panel 30, allowing the first cooling fluid to flow around the baffle 50 to a certain extent, and allowing the first cooling fluid to contact the portion of the wall panel 20 near the baffle 50, so that the heat of the wall panel 20 can be uniformly absorbed by the first cooling fluid.

[0047] In some implementations, combined Figure 3 As shown, the plane of the wall panel 20 is nearly parallel to the plane of the outer panel 30, thus making the gap width between the wall panel 20 and the outer panel 30 relatively uniform, allowing the flow velocity of the first cooling fluid to be nearly uniform throughout the flow space 31. Furthermore, the edge of the gap between the wall panel 20 and the outer panel 30 forms the boundary of the flow space 31 by providing a sealing strip. Alternatively, the edge of the gap between the wall panel 20 and the outer panel 30 extends to the panel 40, making the panel 40 form the boundary of the flow space 31. In some embodiments, the surface of the wall panel 20 or the outer panel 30 is not limited to a plane. In other embodiments, the surface of the wall panel 20 or the outer panel 30 may also be curved.

[0048] In some implementations, combined Figure 5 and Figure 6 As shown, the outer panel 30 is provided with an inlet 313 and an outlet 314. The inlet 313 and outlet 314 are respectively connected to the flow space 31. Specifically, the first cooling fluid enters the flow space 31 through the inlet 313. After flowing within the flow space 31, the first cooling fluid exits the flow space 31 through the outlet 314. Because a relatively low-temperature first cooling fluid is continuously supplied to the inlet 313, a large temperature difference is ensured between the first cooling fluid in the flow space 31 and the wall panel 20, allowing heat from the wall panel 20 to be transferred to the first cooling fluid more quickly. Furthermore, compared to the inlet 313 and outlet 314 being located on the wall panel 20, placing the inlet 313 and outlet 314 of the flow space 31 on the outer panel 30 facilitates connection between the inlet 313 or outlet 314 and external pipes.

[0049] In some implementations, combined Figure 6 and Figure 8As shown, the substrate processing apparatus 100 is provided with an outer flow channel 321 for the second cooling fluid. The outer flow channel 321 is located on the side of the outer plate 30 facing away from the wall plate 20, so that the second cooling fluid can absorb the heat on the outer plate 30. In particular, since the outer side of the outer plate 30 can be contacted by the operator, the operator can be scalded when the outer plate 30 is at a high temperature. Since the outer flow channel 321 is located on the side of the outer plate 30 facing away from the flow channel space 31, when the second cooling fluid flows into the outer flow channel 321, the second cooling fluid can absorb the heat of the outer plate 30, reduce the temperature of the outer plate 30, and prevent the operator from being injured by the high temperature.

[0050] In some embodiments, in combination with Figure 6 and Figure 8 As shown, the substrate processing apparatus 100 includes a pipe shell 32 connected to the outer plate 30. The inner wall surface of the pipe shell 32 and the outer surface of the outer plate 30 form the outer flow channel 321. In particular, since part of the surface of the outer plate 30 forms the boundary of the outer flow channel 321, the second cooling fluid can be more directly in contact with the outer plate 30, and the heat transfer from the outer plate 30 to the second cooling fluid can be accelerated. Further, in the direction perpendicular to the length of the pipe shell 32, part of the cross-sectional edge of the pipe shell 32 is concave, and the opening of the concave edge faces the outer surface of the outer plate 30, so that the pipe shell 32 has a certain structural strength, which can improve the structural strength of the outer plate 30 when the pipe shell 32 is fixedly connected to the outer plate 30, and avoid deformation of the outer plate 30 under the pressure of the first cooling fluid. In one embodiment, the pipe shell 32 is arranged in a plurality of U-shaped shapes along the outer surface of the outer plate 30. In particular, the outer surface of the outer plate 30 is located on the side of the outer plate 30 facing away from the wall plate 20. The inner wall surface of the pipe shell 32 is the surface of the concave side of the pipe shell 32.

[0051] Further, in combination with Figure 2 and Figure 4 As shown, the substrate processing apparatus 100 further includes a frame body 33 arranged on the side of the outer plate 30 facing away from the wall plate 20. The frame body 33 is connected to the panel 40 and provides support for the outer plate 30, so as to avoid leakage of the first cooling fluid due to displacement or deformation of the outer plate 30.

[0052] In some embodiments, in combination with Figure 6 and Figure 7As shown, the flow space 31 comprises a plurality of straight flow sections 311 and a plurality of turning sections 312, each of which is capable of passing the first cooling fluid. The plurality of straight flow sections 311 are arranged in series. Further, one end of one straight flow section 311 is connected to a second straight flow section 311 through one turning section 312, and the other end of the one straight flow section 311 is connected to a third straight flow section 311 through another turning section 312. Specifically, the plurality of straight flow sections 311 are arranged in series in a predetermined straight line direction. The two straight flow sections 311 are connected through the turning section 312, so that the two straight flow sections 311 adjacent to each other have a length direction overlapping portion, and the flow space 31 is arranged in a meandering manner, thereby increasing the length of the flow path of the first cooling fluid between the wall plate 20 and the outer plate 30, and allowing the first cooling fluid to have a substantially uniform flow rate when passing through any surface of the wall plate 20, so as to avoid the wall plate 20 from accumulating heat at a portion where the flow rate of the first cooling fluid is too low. In one embodiment, the straight flow section 311 is arranged in a vertical direction, and the predetermined straight line is parallel to the horizontal direction. In another embodiment, the straight flow section 311 is arranged in a horizontal direction, and the predetermined straight line is parallel to the vertical direction. In yet another embodiment, the straight flow section 311 can be arranged at an arbitrary angle relative to the horizontal direction.

[0053] In one embodiment, the straight flow section 311 is arranged in a straight line, and the predetermined straight line is a straight line perpendicular to the length direction of the straight flow section 311. In another embodiment, the straight flow section 311 is arranged in a curve having a certain curvature. In one embodiment, the flow directions of the first cooling fluid in the two straight flow sections 311 adjacent to each other are opposite, and the flow direction of the first cooling fluid is adjusted by 180 degrees after passing through the turning section 312. In some other embodiments, the flow space 31 can have an arbitrary shape capable of guiding the flow of the first cooling fluid.

[0054] In some embodiments not shown in the drawings, the flow space 31 is arranged in a spiral shape in a plane, and the first cooling fluid flows around a center in a circumferential direction, and at least twice passes through a ray from the center at different distances relative to the center, so that the first cooling fluid flows around the surface of the wall plate 20, and the first cooling fluid has a substantially uniform flow rate when passing through any surface of the wall plate 20.

[0055] In some embodiments, the wall plate 20 and the outer plate 30 are arranged in a meandering manner, and the flow space 31 is arranged in a meandering manner. Figure 6 and Figure 7As shown, the substrate processing apparatus 100 further comprises a spacer 60. The spacer 60 is arranged to abut against the wall plate 20 and the outer plate 30. The spacer 60 is arranged to divide the gap between the wall plate 20 and the outer plate 30, and at least one of the through-flow sections 311 is formed between two spacers 60. Specifically, the spacer 60 can directly abut against the wall plate 20 or the outer plate 30. More specifically, the spacer 60 is arranged to abut against the wall plate 20 at an edge of the wall plate 20, and the spacer 60 is arranged to abut against the outer plate 30 at an edge of the outer plate 30. Alternatively, the spacer 60 can indirectly abut against the wall plate 20 or the outer plate 30. More specifically, a deformable sealing strip can be arranged between the spacer 60 and the wall plate 20 or the outer plate 30 to substantially fill the gap between the spacer 60 and the wall plate 20 or the outer plate 30 to prevent the first cooling fluid from passing through the gap. In one embodiment, the spacer 60 is arranged to extend along a direction perpendicular to the predetermined straight line, and a plurality of spacers 60 are arranged along the predetermined straight line. The spacer 60 comprises a repositioning section 61 and an extension section 62, and the through-flow section 311 of the flow passage 31 is formed between the repositioning sections 61 of adjacent spacers 60.

[0056] Specifically, in combination with the above-mentioned embodiments, the spacer 60 is arranged to abut against the wall plate 20 at an edge of the wall plate 20, and the spacer 60 is arranged to abut against the outer plate 30 at an edge of the outer plate 30. Alternatively, a deformable sealing strip can be arranged between the spacer 60 and the wall plate 20 or the outer plate 30 to substantially fill the gap between the spacer 60 and the wall plate 20 or the outer plate 30 to prevent the first cooling fluid from passing through the gap. Figure 7 As shown, the extension section 62 of each spacer 60 extends to the outer boundary line from an end of the repositioning section 61, and a gap is formed between the end of the baffle 50 and the outer boundary line to prevent the first cooling fluid from being completely blocked by the baffle 50. Further, when a spacer 60 is arranged between two spacers 60, the two spacers 60 are arranged in a spaced-apart relationship. For adjacent two spacers 60, the extension section 62 is arranged on a side opposite to the repositioning section 61. Therefore, the extension sections 62 of the spacers 60 arranged in the spaced-apart relationship are arranged in opposition to each other and are not blocked by the extension section 62 of the spacer 60 arranged in the middle. Thus, the two extension sections 62 arranged in the spaced-apart relationship form a baffle section 312. Specifically, a portion or the entire baffle 50 is arranged between adjacent two spacers 60. More specifically, a portion of the baffle 50 can be arranged between the repositioning sections 61 of adjacent two spacers 60, and another portion of the baffle 50 extends beyond the end of the spacer 60 where the extension section 62 is not arranged to sufficiently guide the first cooling fluid to flow to different surfaces of the wall plate 20. Further, a plurality of baffles 50 can be arranged in parallel between the repositioning sections 61 of adjacent two spacers 60.

[0057] In some embodiments, in combination with the above-mentioned embodiments, the spacer 60 is arranged to abut against the wall plate 20 at an edge of the wall plate 20, and the spacer 60 is arranged to abut against the outer plate 30 at an edge of the outer plate 30. Alternatively, a deformable sealing strip can be arranged between the spacer 60 and the wall plate 20 or the outer plate 30 to substantially fill the gap between the spacer 60 and the wall plate 20 or the outer plate 30 to prevent the first cooling fluid from passing through the gap. Figure 3 and Figure 4As shown, the substrate processing apparatus 100 further comprises a plurality of lead pipes 70 accommodated in the inner cavity. The lead pipes 70 are arranged between the wall plate 20 and the processing stations. Specifically, when processing the substrate, the carrier carrying the substrate moves to the processing station so that the substrate receives corresponding process treatment. More specifically, the front and back of the processing station correspond to the first through hole 41 respectively. The lead pipes 70 are used to pass in the cooling medium. When the cooling medium flows in the lead pipes 70, it can absorb the heat on the lead pipes 70, so that the temperature in the inner cavity drops to a suitable temperature interval. Further, since the lead pipes 70 are arranged between the wall plate 20 and the processing station, the side of the processing station away from the lead pipes 70 is provided with a plasma generating device, so as to cooperate with the first cooling fluid to absorb the heat in the inner cavity from the side of the substrate not receiving process treatment, thereby ensuring the cooling effect. In an embodiment, the first cooling fluid or the second cooling fluid is water flow.

[0058] The technical features of the above-described embodiments can be combined in any manner. For the sake of brevity, not all possible combinations of the technical features in the above-described embodiments are described, however, as long as the combinations of the technical features do not contradict each other, they should be considered within the scope of the present disclosure.

[0059] The above-described embodiments only express several embodiments of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the scope of the patent. It should be pointed out that for ordinary skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are within the scope of the present application. Therefore, the scope of protection of the present application should be subject to the appended claims.

Claims

1. A substrate processing apparatus provided with an internal cavity, characterized in that, The substrate comprises glass, and the substrate processing device comprises: a wall plate for forming a part of a boundary of the inner cavity; a plasma generating device for generating plasma, the plasma being used for cleaning or etching a surface of the substrate; a panel for forming another boundary of the inner cavity, the panel being provided with a first port and a second port, the first port being used for the carrier to enter or exit the inner cavity, and the second port being used for mounting the plasma generating device, the plasma generating device being embedded in the second port and being sealed to the edge of the second port so that the inner cavity can be in a vacuum environment; and an outer plate arranged on a side of the wall plate away from the inner cavity, a gap being formed between the outer plate and the wall plate to form a flow space for the first cooling fluid, the flow space comprising a plurality of parallel flow sections and a plurality of baffle sections, the parallel flow sections and the baffle sections being capable of passing through the first cooling fluid, the parallel flow sections being arranged in a plurality of parallel flow sections, one end of the parallel flow sections passing through one baffle section to another parallel flow section, and the other end passing through another baffle section to another parallel flow section. The substrate processing device further comprises a baffle arranged in the flow space, the length direction of the baffle being at least partially parallel to the flow direction of the first cooling fluid in the flow space, the baffle being used to guide the first cooling fluid to the wall plate, and threads being formed on the outside of the baffle. The substrate processing device is provided with an outer flow channel for introducing a second cooling fluid, the outer flow channel being on a side of the outer plate away from the wall plate, the substrate processing device comprising a tube shell connected to the outer plate, the inner wall surface of the tube shell and the outer surface of the outer plate forming the outer flow channel, a part of the surface of the outer plate forming a boundary of the outer flow channel, the tube shell being arranged in a plurality of U-shaped forms along the outer surface of the outer plate, the outer surface of the outer plate being on a side of the outer plate away from the wall plate, the substrate processing device further comprising a plurality of guide tubes accommodated in the inner cavity, the guide tubes being arranged between the wall plate and a processing station, the processing station being provided with the plasma generating device on a side of the processing station away from the guide tubes.

2. The substrate processing apparatus of claim 1, wherein The outer diameter of the baffle is 60% to 100% of the distance between the wall plate and the outer plate.

3. The substrate processing apparatus of claim 1, wherein The substrate processing device further comprises a partition, the two sides of the partition being abutted against the wall plate and the outer plate respectively, the partition being used to separate the gap between the wall plate and the outer plate, and at least the parallel flow sections being formed between the two partitions.

4. The substrate processing apparatus of claim 1, wherein The outer plate is provided with an input port and an output port, the input port and the output port being communicated with the flow space respectively.

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