Method for manufacturing mask and mask

Abstract

The present invention relates to a method for manufacturing a mask and a mask. The mask may include: a first end portion and a second end portion facing each other in a first direction; and a middle portion located between the first end portion and the second end portion and including a group of through holes. The method for manufacturing a mask may include: a middle portion forming step of forming the outer edge of the middle portion and the group of through holes on a substrate; a first end portion forming step of forming the outer edge of the first end portion on the substrate; and a second end portion forming step of forming the outer edge of the second end portion on the substrate. The middle portion forming step may include: a process of exposing a resist layer on the substrate using a first exposure mask; and a process of etching the substrate through the exposed and developed resist layer. The first end portion forming step may include: a process of exposing a resist layer on the substrate using a second exposure mask; and a process of etching the substrate through the exposed and developed resist layer. Alternatively, the first end portion forming step may include a process of processing the substrate using a laser.

Description

Technical Field

[0001] Embodiments of the present invention relate to a method for manufacturing a mask and the mask. Background Art

[0002] Organic devices, such as organic EL displays, are attracting attention. One known method for forming components in organic devices is to deposit the component materials onto a substrate by vapor deposition. For example, a substrate is first prepared, on which a first electrode is formed in a pattern corresponding to the component. Next, an organic material is deposited onto the first electrode through through-holes in a mask, forming an organic layer on the first electrode. Next, a second electrode is formed on the organic layer.

[0003] A known method for manufacturing a mask is to form through-holes by etching a substrate such as a metal plate. This method includes exposing a resist layer on the substrate using an exposure mask and etching the substrate through the exposed and developed resist layer.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent No. 3539597 Summary of the Invention

[0007] Problems to be solved by the invention

[0008] One approach to reducing organic device manufacturing costs is to increase the size of the substrate. Larger substrates also increase the size of the mask and the equipment used to manufacture the mask. For example, to manufacture a mask compatible with an 8th-generation substrate, an exposure mask compatible with that generation is required. However, increasing the size of the exposure mask requires significant investment.

[0009] An embodiment of the present invention provides a method for manufacturing a mask that can effectively solve such a problem.

[0010] Means for solving problems

[0011] In a method for manufacturing a mask according to one embodiment of the present invention, the mask may include: a first end portion and a second end portion facing each other in a first direction; and an intermediate portion located between the first and second end portions and including a group of through-holes. The manufacturing method may include: an intermediate portion forming step of forming the outer edge of the intermediate portion and the group of through-holes on an original substrate; a first end portion forming step of forming the outer edge of the first end portion on the original substrate; and a second end portion forming step of forming the outer edge of the second end portion on the original substrate. The intermediate portion forming step may include: exposing a resist layer on the original substrate using a first exposure mask; and etching the original substrate through the exposed and developed resist layer. The first end portion forming step may include: exposing the resist layer on the original substrate using a second exposure mask; and etching the original substrate through the exposed and developed resist layer. Alternatively, the first end portion forming step may include processing the original substrate using a laser.

[0012] Effects of the Invention

[0013] According to one embodiment of the present invention, it is possible to reduce the investment required to increase the size of the mask. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a cross-sectional view showing an example of an organic device.

[0015] Figure 2 This is a plan view showing an example of an organic device group.

[0016] Figure 3 This is a cross-sectional view showing an example of a vapor deposition device.

[0017] Figure 4 It is a top view showing an example of a mask device.

[0018] Figure 5 It is a top view showing an example of a mask.

[0019] Figure 6 It will Figure 5 FIG1 is an enlarged top view showing the first end portion of the mask.

[0020] Figure 7 Observed from the AA direction Figure 6 Cross-sectional view of the mask.

[0021] Figure 8 2 is a cross-sectional view showing a substrate used to manufacture a mask.

[0022] Figure 9A It is a plan view showing an example of a process of exposing a resist layer using a first exposure mask.

[0023] Figure 9B Observed from the BB direction Figure 9A Cross-sectional view of the substrate.

[0024] Figure 10A It is a plan view showing an example of a resist layer exposed through a first exposure mask.

[0025] Figure 10B Observed from CC direction Figure 10A Cross-sectional view of the substrate.

[0026] Figure 11A It is a plan view showing an example of a process of exposing a resist layer using a second exposure mask and a third exposure mask.

[0027] Figure 11B Observed from the DD direction Figure 11A Cross-sectional view of the substrate.

[0028] Figure 12A It is a plan view showing an example of a resist layer exposed through the second exposure mask and the third exposure mask.

[0029] Figure 12B Observed from the EE direction Figure 12A Cross-sectional view of the substrate.

[0030] Figure 13 This is a cross-sectional view showing an example of a substrate after etching.

[0031] Figure 14A It is a plan view showing an example of a mask formed on a substrate.

[0032] Figure 14B Observed from the FF direction Figure 14A Cross-sectional view of the substrate.

[0033] Figure 15 This is a plan view showing an example of a process of fixing a mask to a mask support.

[0034] Figure 16A This is a plan view showing an example of a mask formed on a substrate in the second embodiment.

[0035] Figure 16B Observed from the GG direction Figure 16A Cross-sectional view of the substrate.

[0036] Figure 17A This is a plan view showing an example of the process of forming the first end portion and the second end portion in the second embodiment.

[0037] Figure 17B Observed from the HH direction Figure 17ACross-sectional view of the substrate.

[0038] Figure 18 This is a plan view showing an example of a mask in the third embodiment.

[0039] Figure 19 It will Figure 18 FIG1 is an enlarged top view showing the first end portion of the mask.

[0040] Figure 20 This is a plan view showing an example of a mask in the fourth embodiment.

[0041] Figure 21A It will Figure 20 FIG1 is an enlarged top view showing the first end portion of the mask.

[0042] Figure 21B It is a plan view showing an example of the first end portion of the mask.

[0043] Figure 22 It is a plan view showing an example of the first end portion of the mask.

[0044] Figure 23 This is a plan view showing an example of a mask in the fifth embodiment.

[0045] Figure 24 This is a plan view showing an example of a process of exposing a resist layer using a first exposure mask in the sixth embodiment.

[0046] Figure 25 This is a plan view showing an example of a resist layer exposed through a first exposure mask in the sixth embodiment.

[0047] Figure 26 This is a plan view showing an example of a process of exposing a resist layer using a second exposure mask in the sixth embodiment.

[0048] Figure 27 This is a plan view showing an example of a mask in the sixth embodiment.

[0049] Figure 28A This is a plan view showing an example of a mask in the seventh embodiment.

[0050] Figure 28B It will Figure 28A A top view showing an enlarged middle portion of the mask.

[0051] Figure 28C It is a plan view showing an example of a process of exposing a resist layer using a first exposure mask.

[0052] Figure 28D It is a plan view showing an example of a resist layer exposed through a first exposure mask.

[0053] Figure 28E It is a plan view showing an example of a process of exposing the resist layer using a second exposure mask.

[0054] Figure 28F It is a top view showing an example of a reference mark.

[0055] Figure 29 1 is a top view showing a mask according to an embodiment.

[0056] Figure 30A 3 is a diagram showing an image of the first step portion including the first end portion and an image including a mark.

[0057] Figure 30B 3 is a diagram showing an image of the second step portion including the first end portion and an image including a mark.

[0058] Figure 30C 3 is a diagram showing an image of the first step portion including the second end portion and an image including a mark.

[0059] Figure 30D 3 is a diagram showing an image of the second step portion including the second end portion and an image including a mark.

[0060] Figure 31 It is a graph showing the evaluation results of Examples 1 to 49.

[0061] Figure 32 It is a graph showing the evaluation results of Examples 50 to 56.

[0062] Figure 33 It is a graph showing the evaluation results of Examples 57 to 66. DETAILED DESCRIPTION

[0063] In this specification and the drawings, unless otherwise specified, terms such as "substrate", "base material", "plate", "sheet" or "film" indicating a material serving as the basis of a certain structure are not distinguished from each other merely based on the difference in name.

[0064] In this specification and the drawings, unless otherwise specified, terms such as "parallel" and "orthogonal" or values of lengths and angles that limit shapes, geometric conditions and their degrees are not limited to strict meanings, but are interpreted to include a range of degrees that can be expected to have the same function.

[0065] In this specification and the accompanying drawings, unless otherwise specified, when a structure, such as a component or region, is referred to as being "above" or "below," "on the upper side" or "below," or "above" or "below" another component or region or other structure, this includes situations where the structure is in direct contact with the other structure. Furthermore, this also includes situations where another structure is located between the other structure, i.e., situations of indirect contact. Furthermore, unless otherwise specified, the terms "above," "upper side," "above," or "below," "lower side," or "below" may refer to the up-down direction.

[0066] In this specification and the drawings, unless otherwise specified, identical parts or parts having identical functions are denoted by identical or similar reference numerals, and duplicate descriptions may be omitted. Furthermore, for ease of description, the dimensional ratios in the drawings may differ from the actual ratios, and portions of the structure may be omitted from the drawings.

[0067] In this specification and the drawings, unless otherwise specified, one embodiment of this specification can be combined with other embodiments within the scope that no contradiction occurs. In addition, other embodiments can also be combined with each other within the scope that no contradiction occurs.

[0068] In this specification and the accompanying drawings, unless otherwise specified, when two or more steps or processes are disclosed in connection with a method such as a manufacturing method, other undisclosed steps or processes may be implemented between the disclosed steps or processes. Furthermore, the order of the disclosed steps or processes is arbitrary to the extent that no contradiction arises.

[0069] In this specification and the accompanying drawings, unless otherwise specified, numerical ranges indicated by the symbol "to" include the numerical values placed before and after the symbol "to". For example, the numerical range defined by the expression "34 to 38 mass %" is the same as the numerical range defined by the expression "34 mass % or more and 38 mass % or less".

[0070] In one embodiment of this specification, the following example is described: a mask is used to form an organic material or electrode on a substrate when manufacturing an organic EL display device. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment can also be used to form electrodes of the following device, wherein the device is a device for displaying or projecting images or images for representing virtual reality (so-called VR) or augmented reality (so-called AR). In addition, the mask of this embodiment can also be used to form electrodes of liquid crystal display devices, etc., or electrodes of display devices other than organic EL display devices. In addition, the mask of this embodiment can also be used to form electrodes of pressure sensors, etc., or electrodes of organic devices other than display devices.

[0071] A first aspect of the present invention relates to a manufacturing method for a mask, wherein:

[0072] The mask comprises: a first end portion and a second end portion facing each other in a first direction; and an intermediate portion located between the first end portion and the second end portion and including a through hole group.

[0073] The above manufacturing method has the following features:

[0074] a middle portion forming step of forming the outer edge of the middle portion and the through hole group on the original substrate;

[0075] a first end portion forming step of forming an outer edge of the first end portion on the original substrate; and

[0076] a second end forming step of forming the outer edge of the second end on the original substrate;

[0077] The intermediate portion forming step includes: exposing the resist layer on the original substrate using a first exposure mask; and etching the original substrate through the exposed and developed resist layer.

[0078] The first end forming step includes:

[0079] A process of exposing the resist layer on the original substrate using a second exposure mask; and a process of etching the original substrate through the exposed and developed resist layer; or

[0080] The invention comprises the following steps: using a laser to process the original substrate.

[0081] In a second aspect of the present invention, in the manufacturing method of the first aspect, the second end portion forming step may include: exposing the resist layer on the original substrate using a third exposure mask; and etching the original substrate through the exposed and developed resist layer. Alternatively, the second end portion forming step may include processing the original substrate using a laser.

[0082] In a third aspect of the present invention, in each of the manufacturing methods of the first or second aspects, the first exposure mask may have a rectangular shape including a first side and a second side. The first side may be at least 1250 mm, and the second side may be at least 1100 mm.

[0083] In a fourth aspect of the present invention, in each of the manufacturing methods of the first to third aspects, the thickness of the original substrate may be 40 μm or less.

[0084] A fifth aspect of the present invention relates to a mask including:

[0085] a substrate comprising a first side edge and a second side edge extending in a first direction and comprising a first surface and a second surface; and

[0086] A through hole group, penetrating the substrate,

[0087] When viewed from above, the mask includes: a first end portion and a second end portion facing each other in the first direction; and a middle portion located between the first end portion and the second end portion and including the through hole group.

[0088] The first side edge includes a first step portion located at a boundary between the first end portion and the middle portion and displaced in a second direction perpendicular to the first direction.

[0089] The dimension of the first step portion in the second direction is 1 mm or less.

[0090] The first end portion includes a first mark located on the first surface or the second surface.

[0091] In a sixth aspect of the present invention, in the mask of the fifth aspect, a dimension of the first step portion in the second direction may be 2.5 μm or more.

[0092] In a seventh aspect of the present invention, in each mask of the fifth aspect or the sixth aspect, the first step portion may be an outer step portion that is displaced outward in the second direction when directed outward in the first direction.

[0093] In an eighth aspect of the present invention, in each mask of the fifth aspect or the sixth aspect, the first step portion may be an inner step portion that is displaced inward in the second direction when moving outward in the first direction.

[0094] In a ninth aspect of the present invention, in each mask of the fifth or sixth aspect, the second side edge may include a second step portion located at a boundary between the first end portion and the middle portion and displaced in a second direction perpendicular to the first direction. The second step portion may have a dimension of 1 mm or less in the second direction.

[0095] In a tenth aspect of the present invention, in the mask of the ninth aspect, the first step portion and the second step portion may be outer step portions that are displaced outward in the second direction when directed outward in the first direction.

[0096] In an eleventh aspect of the present invention, in the mask of the ninth aspect, the first step portion and the second step portion may be inner step portions that are displaced inward in the second direction when moving outward in the first direction.

[0097] In the 12th embodiment of the present invention, in the mask of the above-mentioned 9th embodiment, the above-mentioned first step portion can be an outer step portion that is displaced outward in the above-mentioned second direction when it is toward the outside of the above-mentioned first direction, and the above-mentioned second step portion can be an inner step portion that is displaced inward in the above-mentioned second direction when it is toward the outside of the above-mentioned first direction.

[0098] In the 13th embodiment of the present invention, in each mask of the above-mentioned 5th embodiment to the above-mentioned 12th embodiment, the above-mentioned middle portion may include a first middle mark located in the first side edge area extending along the above-mentioned first side edge, and the distance between the above-mentioned first step portion in the above-mentioned first direction and the above-mentioned first middle mark may be less than 5 mm.

[0099] In a fourteenth aspect of the present invention, in the mask of the thirteenth aspect, a ratio of a dimension of the first step portion in the second direction to a distance between the first step portion and the first intermediate mark in the first direction may be 1.0 or less.

[0100] A fifteenth aspect of the present invention relates to a mask including:

[0101] a substrate comprising a first side edge and a second side edge extending in a first direction and comprising a first surface and a second surface; and

[0102] A through hole group, penetrating the substrate,

[0103] When viewed from above, the mask includes: a first end portion and a second end portion facing each other in the first direction; and a middle portion located between the first end portion and the second end portion and including the through hole group.

[0104] The direction in which the first side edge of the first end portion extends is offset by 0.0007° or more from the direction in which the first side edge of the middle portion extends.

[0105] The first end portion includes a first mark located on the first surface or the second surface.

[0106] According to a sixteenth aspect of the present invention, in the mask of the fifteenth aspect, the direction in which the second side edge of the first end portion extends may be offset by 0.0007° or more from the direction in which the second side edge of the middle portion extends.

[0107] A seventeenth aspect of the present invention relates to a mask including:

[0108] a substrate comprising a first side edge and a second side edge extending in a first direction and comprising a first surface and a second surface; and

[0109] A through hole group, penetrating the substrate,

[0110] When viewed from above, the mask includes: a first end portion and a second end portion facing each other in the first direction; and a middle portion located between the first end portion and the second end portion and including the through hole group.

[0111] The intermediate portion includes a center that coincides with the center of the mask in the first direction when viewed from above, and has a size of 1250 mm in the first direction.

[0112] The first end portion includes a first mark located on the first surface or the second surface.

[0113] An eighteenth aspect of the present invention relates to a mask including:

[0114] a substrate comprising a first side edge and a second side edge extending in a first direction and comprising a first surface and a second surface; and

[0115] A through hole group, penetrating the substrate,

[0116] When viewed from above, the mask includes: a first end portion and a second end portion facing each other in the first direction; and a middle portion located between the first end portion and the second end portion and including the through hole group.

[0117] The first side edge includes a first step portion located at a boundary between the first end portion and the middle portion and displaced in a second direction perpendicular to the first direction.

[0118] The first step portion is an outer step portion that is displaced outward in the second direction when moving outward in the first direction.

[0119] The size of the first step portion in the second direction is 10 μm or larger.

[0120] The second side edge includes a second step portion located at a boundary between the first end portion and the middle portion and displaced in a second direction perpendicular to the first direction.

[0121] The second step portion is an outer step portion that is displaced outward in the second direction when moving outward in the first direction.

[0122] The size of the second step portion in the second direction is 10 μm or larger.

[0123] The first end portion includes a first mark located on the first surface or the second surface.

[0124] In a nineteenth aspect of the present invention, in each of the masks of the fifth to eighteenth aspects, the intermediate portion may include a first intermediate mark located between the first side edge and the group of through-holes in a second direction perpendicular to the first direction. The distance between the first mark and the first intermediate mark in the second direction may be 4 mm or less.

[0125] In a 20th aspect of the present invention, in each mask of the 5th aspect to the 19th aspect, the thickness of the base material may be 40 μm or less.

[0126] An embodiment of the present invention will be described in detail with reference to the accompanying drawings. It should be noted that the embodiment described below is an example of the embodiment of the present invention, and the present invention is not limited to these embodiments.

[0127] An organic device 100 including an element formed by using a mask will be described. Figure 1 1 is a cross-sectional view showing an example of the organic device 100 .

[0128] Organic device 100 includes a substrate 110 having a first surface 111 and a second surface 112; and a plurality of elements 115 located on first surface 111 of substrate 110. Elements 115 are, for example, pixels. Elements 115 may be arranged along the in-plane direction of first surface 111. Substrate 110 may include two or more types of elements 115. For example, substrate 110 may include a first element 115A and a second element 115B. Although not shown, substrate 110 may include a third element. First element 115A, second element 115B, and third element may be, for example, a red pixel, a blue pixel, and a green pixel.

[0129] The element 115 may include a first electrode 120, an organic layer 130 located on the first electrode 120, and a second electrode 140 located on the organic layer 130. The element formed by using a mask may be the organic layer 130 or the second electrode 140. The element formed by using a mask is also referred to as a vapor-deposition layer.

[0130] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in a plan view. The insulating layer 160 may include, for example, polyimide. The insulating layer 160 may overlap with an end portion of the first electrode 120 in a plan view.

[0131] The organic device 100 may be an active matrix device. For example, although not shown, the organic device 100 may include switches electrically connected to each of the plurality of elements 115. The switches are, for example, transistors. The switches can control the on / off switching of the voltage or current to the corresponding element 115.

[0132] The substrate 110 can be an insulating plate-shaped component. The substrate 110 is preferably transparent, allowing light to pass through. Examples of materials for the substrate 110 include rigid, inflexible materials such as quartz glass, Pyrex (registered trademark) glass, and synthetic quartz plates, as well as flexible materials such as resin films, optical resin plates, and thin glass. Alternatively, the substrate can be a laminate having a barrier layer on one or both sides of a resin film.

[0133] Element 115 is configured to achieve a certain function by applying a voltage between first electrode 120 and second electrode 140 or by flowing a current between first electrode 120 and second electrode 140. For example, if element 115 is a pixel of an organic EL display device, element 115 can emit light that forms an image.

[0134] The first electrode 120 includes a conductive material. For example, the first electrode 120 includes a metal, a conductive metal oxide, or another conductive inorganic material. The first electrode 120 may include a transparent and conductive metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0135] The organic layer 130 comprises an organic material. When electricity is applied to the organic layer 130, it can perform certain functions. "Electrification" refers to applying a voltage to the organic layer 130 or flowing a current through the organic layer 130. The organic layer 130 can be a light-emitting layer that emits light when electricity is applied. The organic layer 130 can also comprise an organic semiconductor material. The properties of the organic layer 130, such as its transmittance and refractive index, can be adjusted as appropriate.

[0136] like Figure 1 As shown, organic layer 130 may include a first organic layer 130A and a second organic layer 130B. First organic layer 130A is contained in first element 115A. Second organic layer 130B is contained in second element 115B. Although not shown, organic layer 130 may include a third organic layer contained in a third element. First organic layer 130A, second organic layer 130B, and third organic layer may be, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0137] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located therebetween is driven. If the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130 and extracted to the outside from the second electrode 140 side or the first electrode 120 side.

[0138] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, and the like.

[0139] The second electrode 140 includes a conductive material such as a metal. The second electrode 140 is formed on the organic layer 130 by an evaporation method using a mask. As materials constituting the second electrode 140, platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, indium tin oxide (ITO), indium zinc oxide (IZO), carbon, etc. can be used. These materials can be used alone or in combination of two or more. When using two or more materials, layers consisting of each material can be stacked. In addition, alloys containing two or more materials can also be used. For example, magnesium alloys such as MgAg, aluminum alloys such as AlLi, AlCa, and AlMg can be used. MgAg is also called magnesium silver. Magnesium silver is preferably used as the material of the second electrode 140. Alkali metal and alkaline earth metal alloys can be used. For example, lithium fluoride, sodium fluoride, potassium fluoride, etc. can be used.

[0140] The second electrode 140 may be a common electrode. For example, the second electrode 140 of one element 115 may be electrically connected to the second electrode 140 of another element 115 .

[0141] The second electrode 140 may be composed of a single layer. For example, the second electrode 140 may be a layer formed by a vapor deposition process using a single mask.

[0142] Or, as Figure 1 As shown, the second electrode 140 can include a first layer 140A and a second layer 140B. The first layer 140A can be formed by a vapor deposition process using a first mask. The second layer 140B can be formed by a vapor deposition process using a second mask. In this way, the second electrode 140 can be formed using two or more masks. This increases the degree of freedom in the pattern of the second electrode 140 when viewed from above. For example, the organic device 100 can include a region where the second electrode 140 is not present when viewed from above. The region where the second electrode 140 is not present can have a higher transmittance than the region where the second electrode 140 is present.

[0143] like Figure 1 As shown, the end of the first layer 140A and the end of the second layer 140B may partially overlap, thereby electrically connecting the first layer 140A and the second layer 140B.

[0144] Although not shown, the second electrode 140 may include another layer such as a third layer. The other layer such as the third layer may be electrically connected to the first layer 140A and the second layer 140B.

[0145] In the following description, when describing the structure of the second electrode 140 that is common to the first layer 140A, the second layer 140B, the third layer, etc., the term “second electrode 140 ” and the reference numeral are used.

[0146] In the method for manufacturing the organic device 100, it is possible to make Figure 2 The organic device group 102 shown in FIG. The organic device group 102 includes two or more organic devices 100. For example, the organic device group 102 may include organic devices 100 arranged in a first direction D1 and a second direction D2. The second direction D2 is perpendicular to the first direction D1. The two or more organic devices 100 may share a single substrate 110. For example, the organic device group 102 may include layers such as a first electrode 120, an organic layer 130, and a second electrode 140, which are located on a single substrate 110 and constitute the two or more organic devices 100. The organic devices 100 are obtained by dividing the organic device group 102.

[0147] As will be described later, the first direction D1 may be a direction in which the mask 50 used to manufacture the organic device 100 extends.

[0148] The dimension A1 of the organic device 100 in the first direction D1 can be, for example, greater than 10 mm, greater than 30 mm, or greater than 100 mm. The dimension A1 can be, for example, less than 200 mm, less than 500 mm, or less than 1000 mm. The range of the dimension A1 can be defined by a first group consisting of 10 mm, 30 mm, and 100 mm and / or a second group consisting of 200 mm, 500 mm, and 1000 mm. The range of the dimension A1 can be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the dimension A1 can be defined by a combination of any two of the values included in the first group. The range of the dimension A1 can be defined by a combination of any two of the values included in the second group. For example, the size A1 can be greater than 10 mm and less than 1000 mm, greater than 10 mm and less than 500 mm, greater than 10 mm and less than 200 mm, greater than 10 mm and less than 100 mm, greater than 10 mm and less than 30 mm, greater than 30 mm and less than 1000 mm, greater than 30 mm and less than 500 mm, greater than 30 mm and less than 200 mm, greater than 30 mm and less than 100 mm, greater than 100 mm and less than 1000 mm, greater than 100 mm and less than 500 mm, greater than 100 mm and less than 200 mm, greater than 200 mm and less than 1000 mm, greater than 200 mm and less than 500 mm, or greater than 500 mm and less than 1000 mm.

[0149] The dimension A2 of the organic device 100 in the second direction D2 can be, for example, greater than 10 mm, greater than 20 mm, or greater than 50 mm. The dimension A2 can be, for example, less than 100 mm, less than 200 mm, or less than 500 mm. The range of the dimension A2 can be defined by a first group consisting of 10 mm, 20 mm, and 50 mm and / or a second group consisting of 100 mm, 200 mm, and 500 mm. The range of the dimension A2 can be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the dimension A2 can be defined by a combination of any two of the values included in the first group. The range of the dimension A2 can be defined by a combination of any two of the values included in the second group. For example, the size A2 can be greater than 10 mm and less than 500 mm, greater than 10 mm and less than 200 mm, greater than 10 mm and less than 100 mm, greater than 10 mm and less than 50 mm, greater than 10 mm and less than 20 mm, greater than 20 mm and less than 500 mm, greater than 20 mm and less than 200 mm, greater than 20 mm and less than 100 mm, greater than 20 mm and less than 50 mm, greater than 50 mm and less than 500 mm, greater than 50 mm and less than 200 mm, greater than 50 mm and less than 100 mm, greater than 100 mm and less than 500 mm, greater than 100 mm and less than 200 mm, or greater than 200 mm and less than 500 mm.

[0150] The organic device group 102 includes a device region 103 where a plurality of organic devices 100 are present. The device region 103 has a size G12 in the first direction D1 and a size G22 in the second direction D2.

[0151] By increasing the size of the substrate 110, the dimensions G12 and G22 of the device region 103 can be increased. This increases the number of organic devices 100 formed on one substrate 110. This reduces the manufacturing cost of the organic devices 100.

[0152] The dimension G11 of the substrate 110 in the first direction D1 may be, for example, greater than 1000 mm, greater than 1200 mm, greater than 1300 mm, or greater than 2100 mm. The dimension G11 may be, for example, less than 1200 mm, less than 1300 mm, less than 1900 mm, less than 2100 mm, or less than 2300 mm. The range of the dimension G11 may be defined by the first group consisting of 1000 mm, 1200 mm, 1300 mm, and 2100 mm and / or the second group consisting of 1200 mm, 1300 mm, 1900 mm, 2100 mm, and 2300 mm. The range of the dimension G11 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the dimension G11 may be defined by a combination of any two of the values included in the first group. The range of dimension G11 can be defined by a combination of any two values included in the above-mentioned second group. For example, dimension G11 may be greater than or equal to 1000 mm and less than or equal to 2300 mm, greater than or equal to 1000 mm and less than or equal to 2100 mm, greater than or equal to 1000 mm and less than or equal to 1900 mm, greater than or equal to 1000 mm and less than or equal to 1300 mm, greater than or equal to 1000 mm and less than or equal to 1200 mm, greater than or equal to 1200 mm and less than or equal to 2300 mm, greater than or equal to 1200 mm and less than or equal to 2100 mm, greater than or equal to 1200 mm and less than or equal to 1300 mm, greater than or equal to 1300 mm and less than or equal to 2300 mm, greater than or equal to 1300 mm and less than or equal to 2100 mm, greater than or equal to 1300 mm and less than or equal to 1900 mm, greater than or equal to 1900 mm and less than or equal to 2300 mm, greater than or equal to 1900 mm and less than or equal to 2100 mm, or greater than or equal to 2300 mm.

[0153] The dimension G21 of the substrate 110 in the second direction D2 may be, for example, greater than 1200 mm, greater than 1300 mm, greater than 1500 mm, greater than 2000 mm, or greater than 2400 mm. The dimension G21 may be, for example, less than 1300 mm, less than 2300 mm, less than 2400 mm, or less than 2600 mm. The range of the dimension G21 may be defined by the first group consisting of 1200 mm, 1300 mm, 1500 mm, 2000 mm, and 2400 mm and / or the second group consisting of 1300 mm, 2300 mm, 2400 mm, and 2600 mm. The range of the dimension G21 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the dimension G21 may be defined by a combination of any two of the values included in the first group. The range of the dimension G21 can be defined by a combination of any two values among the values included in the second group described above. For example, the dimension G21 can be greater than 1200 mm and less than 2600 mm, greater than 1200 mm and less than 2400 mm, greater than 1200 mm and less than 2300 mm, greater than 1200 mm and less than 1500 mm, greater than 1200 mm and less than 1300 mm, greater than 1300 mm and less than 2600 mm, greater than 1300 mm and less than 2400 mm, greater than 1300 mm and less than 2300 mm, greater than 1300 mm and less than 1500 mm, greater than 1500 mm and less than 2600 mm, greater than 1500 mm and less than 2400 mm, greater than 1500 mm and less than 2300 mm, greater than 2000 mm and less than 2300 mm, greater than 2300 mm and less than 2600 mm, greater than 2300 mm and less than 2400 mm, or greater than 2400 mm and less than 2600 mm.

[0154] The specific numerical ranges for dimension G11 and dimension G21 can be combined. For example, dimension G11 may be between 1000 mm and 1200 mm, and dimension G21 may be between 1200 mm and 1300 mm. For example, dimension G11 may be between 1200 mm and 1300 mm, and dimension G21 may be between 2000 mm and 2300 mm. For example, dimension G11 may be between 2100 mm and 2300 mm, and dimension G21 may be between 2400 mm and 2600 mm.

[0155] Next, a method of forming elements such as the organic layer 130 and the second electrode 140 by vapor deposition will be described. Figure 31 is a diagram showing a vapor deposition apparatus 10 . The vapor deposition apparatus 10 performs a vapor deposition process for vapor-depositing a vapor deposition material onto a substrate 110 .

[0156] like Figure 3 As shown, the evaporation device 10 may include a evaporation source 6, a heater 8, and a mask device 15 therein. Furthermore, the evaporation device 10 may further include an exhaust unit for creating a vacuum atmosphere inside the evaporation device 10. The evaporation source 6 is, for example, a crucible, and contains a evaporation material 7 such as an organic material or a metal material. The heater 8 heats the evaporation source 6, causing the evaporation material 7 to evaporate under a vacuum atmosphere. The mask device 15 is arranged so as to face the crucible 6.

[0157] like Figure 3 As shown, the mask apparatus 15 includes at least one mask 50. The mask apparatus 15 may include a mask support 40 that supports the mask 50. The mask support 40 may include a frame 41 having an opening 43. The mask 50 may be fixed to the frame 41 so as to extend across the opening 43 when viewed from above. The frame 41 may support the mask 50 in a stretched state along its surface, thereby preventing the mask 50 from bending.

[0158] like Figure 3 As shown, the mask device 15 is arranged in the vapor deposition apparatus 10 such that the mask 50 faces the first surface 111 of the substrate 110. The mask 50 includes a plurality of through holes 56 through which the vapor deposition material 7 flying from the vapor deposition source 6 passes. In the following description, the surface of the mask 50 facing the substrate 110 is referred to as the first surface 551. The surface of the mask 50 located on the opposite side of the first surface 551 is referred to as the second surface 552.

[0159] like Figure 3 As shown, the evaporation device 10 may include a substrate holder 2 for holding a substrate 110. The substrate holder 2 may be movable in the thickness direction of the substrate 110. The substrate holder 2 may be movable in the surface direction of the substrate 110. The substrate holder 2 may be configured to control the tilt of the substrate 110. For example, the substrate holder 2 may include a plurality of chucks mounted on the outer edge of the substrate 110. Each chuck may be independently movable in the thickness direction and the surface direction of the substrate 110.

[0160] By moving at least one of the substrate holder 2 and the mask holder 3 , the position of the mask 50 relative to the substrate 110 can be adjusted.

[0161] like Figure 3 As shown, the vapor deposition apparatus 10 may include a cooling plate 4 disposed on the second surface 112 side of the substrate 110. The cooling plate 4 may have a flow path for circulating a refrigerant inside the cooling plate 4. The cooling plate 4 can suppress a temperature increase of the substrate 110 during the vapor deposition process.

[0162] like Figure 3 As shown, the evaporation device 10 can have a magnet 5 arranged on the second surface 112 side of the substrate 110. The magnet 5 can also be arranged on the surface of the cooling plate 4 away from the substrate 110. The magnet 5 can attract the mask 50 to the side of the substrate 110 by magnetic force. In this way, the gap between the mask 50 and the substrate 110 can be reduced or eliminated. In this way, the generation of shadows in the evaporation process can be suppressed. Shadow refers to the phenomenon that the evaporation material 7 enters the gap between the mask 50 and the substrate 110 and makes the shape of the evaporation layer uneven. The shape of the evaporation layer refers to the thickness of the evaporation layer, the size of the evaporation layer when viewed from above, etc. An electrostatic chuck using electrostatic force can be used to attract the mask 50 to the side of the substrate 110.

[0163] Figure 4 This is a top view of the mask apparatus 15 as viewed from the first surface 551. The mask apparatus 15 may include a mask support 40 including a frame 41 and a mask 50 fixed to the frame 41. The mask apparatus 15 may include two or more masks 50 arranged in the second direction D2. To prevent deflection of the mask 50, the frame 41 supports the mask 50 while applying tension to the mask 50.

[0164] The frame 41 may include a pair of first sides 411 extending along the first direction D1, a pair of second sides 412 extending along the second direction D2, and an opening 43. The second sides 412 may be longer than the first sides 411. The opening 43 is located between the pair of first sides 411 and between the pair of second sides 412.

[0165] The mask 50 may include a first side edge 501 and a second side edge 502 extending in the first direction D1, and a first end 503 and a second end 504. The first end 503 and the second end 504 are ends of the mask 50 in the first direction D1.

[0166] In a plan view, the mask 50 includes a first end portion 51a, a second end portion 51b, and a middle portion 52. The first end portion 51a and the second end portion 51b face each other in a first direction D1. The middle portion 52 is located between the first end portion 51a and the second end portion 51b. The middle portion 52 includes a through-hole group 53.

[0167] The first end portion 51a has a width W01. Width W01 is the dimension of the first end portion 51a in the second direction D2. Width W01 is measured at the boundary between the first end portion 51a and the middle portion 52. The second end portion 51b has a width W02. Width W02 is the dimension of the second end portion 51b in the second direction D2. Width W02 is measured at the boundary between the second end portion 51b and the middle portion 52. The middle portion 52 has a width W03. Width W03 is the dimension of the middle portion 52 in the second direction D2. Width W03 is measured at the center C1 of the mask 50.

[0168] The width W01 of the first end portion 51a may be the same as, larger than, or smaller than the width W03 of the middle portion 52. The width W02 of the second end portion 51b may be the same as, larger than, or smaller than the width W03 of the middle portion 52.

[0169] “Viewed from above” means observing the object along the thickness direction of the mask 50 .

[0170] The mask 50 is fixed to the second side 412. Specifically, the first end 51a is fixed to one second side 412, and the second end 51b is fixed to the other second side 412. The first end 51a and the second end 51b can be fixed to the second side 412 by welding. The middle portion 52 overlaps with the opening 43 of the frame 41 in a plan view.

[0171] Figure 5 is a top view showing an example of a mask 50. The through-hole group 53 in the middle portion 52 includes a plurality of through-holes 56 regularly arranged in a top view. The through-holes 56 may also be periodically arranged in two directions. For example, the through-holes 56 may be periodically arranged in the first direction D1 and the second direction D2.

[0172] One through-hole group 53 corresponds to one organic device 100. For example, the plurality of first organic layers 130A included in one organic device 100 are formed of a vapor-deposited material passing through the plurality of through-holes 56 of one through-hole group 53. The mask 50 includes at least one through-hole group 53. The mask 50 may include two or more through-hole groups 53 arranged along the first direction D1.

[0173] The mask 50 has a dimension M11 in the first direction D1. The intermediate portion 52 has a dimension M12 in the first direction D1. The first end portion 51a has a dimension M13 in the first direction D1. The second end portion 51b has a dimension M14 in the first direction D1.

[0174] In order to make Figure 2The larger substrate 110 of the organic device assembly 102 shown requires an increase in the size M11 of the mask 50. The larger mask 50 requires an increase in the size of the manufacturing equipment used to manufacture the mask. For example, to manufacture a mask for an 8th-generation substrate, an exposure mask suitable for the 8th-generation substrate is required. However, increasing the size of the exposure mask requires significant investment.

[0175] Another method of manufacturing a single mask 50 by performing two or more exposure steps is also contemplated. This method allows for the manufacture of a mask 50 having a size larger than that of the exposure mask. Therefore, a large mask 50 can be manufactured using an existing exposure mask. On the other hand, when performing two or more exposure steps, the positional accuracy of the through-holes in the mask 50 decreases. For example, the relative accuracy between the positions of the through-holes determined by the first exposure step and the positions of the through-holes determined by the second exposure step decreases. This is because the relative position of the exposure mask in the second exposure step may deviate from the ideal position relative to the position of the exposure mask in the first exposure step.

[0176] When performing the exposure process two or more times, the exposure process can be set to take into account the relative position of the exposure mask deviating from the ideal position. In this embodiment, it is proposed to use a single exposure mask to form the middle portion 52, and use another exposure mask or other method to form the first end portion 51a and the second end portion 51b. As a result, the size M12 of the middle portion 52 can be increased compared to when forming the entire mask 50 using a single exposure mask. In addition, the position of the through hole 56 in the middle portion 52 can be determined in a single exposure process. Therefore, compared to the case where the middle portion 52 is subjected to two or more exposure processes, the position accuracy of the through hole 56 can be improved.

[0177] For example, when the entire mask 50 is formed using a G6 half-generation exposure mask, the dimension M11 of the mask 50 is approximately 1200 mm, and the dimension M12 of the middle portion 52 is approximately 900 mm. By forming the middle portion 52 using a G6 half-generation exposure mask, the dimension M12 of the middle portion 52 can be approximately 1200 mm.

[0178] The dimension M12 of the middle portion 52 in the first direction D1 is Figure 2 The device region 103 shown has a size G12 or larger. Thus, the device region 103 can be formed by vapor deposition using a single mask 50. Figure 2 The two or more organic devices 100 shown are arranged along the first direction D1, for example, the first organic layer 130A. In other words, by increasing the dimension M12 of the middle portion 52 in the first direction D1, the dimension G12 of the device region 103 can be increased. This can reduce the manufacturing cost of the organic device 100.

[0179] The dimension M12 of the middle portion 52 may be, for example, 900 mm or greater, 1100 mm or greater, 1200 mm or greater, or 2000 mm or greater. The dimension M12 may be, for example, less than 1100 mm, less than 1200 mm, less than 1800 mm, less than 2000 mm, or less than 2200 mm. The range of the dimension M12 may be defined by a first group consisting of 900 mm, 1100 mm, 1200 mm, and 2000 mm and / or a second group consisting of 1100 mm, 1200 mm, 1800 mm, 2000 mm, and 2200 mm. The range of the dimension M12 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the dimension M12 may be defined by a combination of any two of the values included in the first group. The range of the dimension M12 can be defined by a combination of any two values included in the second group. For example, the dimension M12 can be 900 mm or more and 2200 mm or less, 900 mm or more and 2000 mm or less, 900 mm or more and 1800 mm or less, 900 mm or more and 1200 mm or less, 900 mm or more and 1100 mm or less, 1100 mm or more and 2200 mm or less, 1100 mm or more and 2000 mm or less, 1100 mm or more and 1800 mm or less, 1100 mm or more and 1200 mm or less, 1200 mm or more and 2200 mm or less, 1200 mm or more and 2000 mm or less, 1200 mm or more and 1800 mm or less, 1800 mm or more and 2200 mm or less, 1800 mm or more and 2000 mm or more, or 2000 mm or more and 2200 mm or less.

[0180] The dimension M13 of the first end portion 51a is smaller than the dimension M12 of the middle portion 52. The ratio of the dimension M13 to the dimension M12 may be, for example, greater than 0.01, greater than 0.02, or greater than 0.05. The ratio of the dimension M13 to the dimension M12 may be, for example, less than 0.10, less than 0.20, or less than 0.30. The range of the ratio of the dimension M13 to the dimension M12 may be defined by the first group consisting of 0.01, 0.02, and 0.05 and / or the second group consisting of 0.10, 0.20, and 0.30. The range of the ratio of the dimension M13 to the dimension M12 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the ratio of the dimension M13 to the dimension M12 may be defined by a combination of any two of the values included in the first group. The range of the ratio of the dimension M13 to the dimension M12 can be defined by a combination of any two values included in the values of the second group. For example, the ratio of the dimension M13 to the dimension M12 may be 0.01 or more and 0.30 or less, 0.01 or more and 0.20 or less, 0.01 or more and 0.10 or less, 0.01 or more and 0.05 or less, 0.01 or more and 0.02 or less, 0.02 or more and 0.30 or less, 0.02 or more and 0.20 or less, 0.02 or more and 0.10 or less, 0.02 or more and 0.05 or less, 0.05 or more and 0.30 or less, 0.05 or more and 0.20 or less, 0.05 or more and 0.10 or less, 0.10 or more and 0.30 or less, 0.10 or more and 0.20 or less, or 0.20 or more and 0.30 or less.

[0181] The table shows examples of combinations of the dimensions M12 and M13.

[0182]

Table 1

[0183] M12 M13 M13 / M12 Example 1 1100 150 0.14 Example 2 1100 200 0.18 Example 3 900 150 0.17 Example 4 900 200 0.22 Example 5 1200 150 0.13 Example 6 1200 200 0.17 Example 7 1100 150 0.14 Example 8 1100 200 0.18 Example 9 2200 150 0.07 Example 10 2200 200 0.09 Example 11 2000 150 0.08 Example 12 2000 200 0.10

[0184] The dimension M14 of the second end portion 51b is smaller than the dimension M12 of the middle portion 52. As the numerical range of the ratio of the dimension M14 to the dimension M12, the numerical range of the ratio of the dimension M13 to the dimension M12 described above can be adopted.

[0185] The middle portion 52 has a dimension M20 in the second direction D2. The dimension M20 is smaller than the dimension M12. The ratio of the dimension M20 to the dimension M12 may be, for example, greater than 0.01, greater than 0.02, or greater than 0.05. The ratio of the dimension M20 to the dimension M12 may be, for example, less than 0.10, less than 0.30, or less than 0.80. The range of the ratio of the dimension M20 to the dimension M12 may be defined by the first group consisting of 0.01, 0.02, and 0.05 and / or the second group consisting of 0.10, 0.30, and 0.80. The range of the ratio of the dimension M20 to the dimension M12 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the ratio of the dimension M20 to the dimension M12 may be defined by a combination of any two of the values included in the first group. The range of the ratio of the dimension M20 to the dimension M12 can be defined by a combination of any two values included in the values of the second group. For example, the ratio of the dimension M20 to the dimension M12 may be 0.01 or more and 0.80 or less, 0.01 or more and 0.30 or less, 0.01 or more and 0.10 or less, 0.01 or more and 0.05 or less, 0.01 or more and 0.02 or less, 0.02 or more and 0.80 or less, 0.02 or more and 0.30 or less, 0.02 or more and 0.05 or less, 0.05 or more and 0.80 or less, 0.05 or more and 0.30 or less, 0.05 or more and 0.10 or less, 0.10 or more and 0.80 or less, 0.10 or more and 0.30 or more and 0.80 or less.

[0186] Reference Figure 5 and Figure 6 , the structural features of the mask 50 produced by the method of this embodiment are described in detail. Figure 6 It will Figure 5 FIG. 1 is an enlarged plan view of the first end portion 51 a of the mask 50 . Figure 5 and Figure 6 3 shows the mask 50 in a state before being fixed to the frame 41 . Figure 5 and Figure 6 The isometric plan view shows the mask 50 when viewed from the first surface 551 side.

[0187] The outer edge of the mask 50 includes the first side edge 501, the second side edge 502, the first end 503 and the second end 504. Figure 5 and Figure 6As shown, the first side edge 501 of the mask 50 includes a first step portion 501a located at the boundary between the middle portion 52 and the first end portion 51a. In other words, the first end portion 51a and the middle portion 52 are separated by the first step portion 501a.

[0188] The first step portion 501a is displaced in the second direction D2. Figure 5 and Figure 6 In the example shown, the first step portion 501a is displaced outward in the second direction D2 when it is directed outward in the first direction D1. In other words, the first side edge 501 of the first end portion 51a is located outside the first side edge 501 of the middle portion 52. "Outside" refers to the side away from the center C1 of the mask 50 when viewed from above. "Outside in the first direction D1" refers to the side away from the center C1 of the mask 50 in the first direction D1. "Outside in the second direction D2" refers to the side away from the center C1 of the mask 50 in the second direction D2. In the following description, "the step portion that is displaced outward in the second direction D2 when it is directed outward in the first direction D1" is also referred to as the outer step portion.

[0189] The center C1 of the mask 50 can be determined as an intersection of a first center line C10 extending along the first direction D1 and a second center line C20 extending along the second direction D2 .

[0190] The first center line C10 is a straight line located midway between the first straight line L1 and the second straight line L2.

[0191] The first straight line L1 passes through the first side edge region 54a of the middle portion 52, described later, and extends along the first side edge 501. The first straight line L1 is defined as a straight line passing through the first reference point P1 and the second reference point P2. The first reference point P1 is located in the first side edge region 54a of the middle portion 52, described later, and is close to the first end portion 51a. The first reference point P1 is a first intermediate mark 58a, described later, located in the first side edge region 54a of the middle portion 52 and closest to the first end portion 51a. The second reference point P2 is located in the first side edge region 54a of the middle portion 52 and is close to the second end portion 51b. The second reference point P2 is a first intermediate mark 58a, located in the first side edge region 54a of the middle portion 52 and closest to the second end portion 51b.

[0192] The second straight line L2 passes through the second side edge region 54b of the middle portion 52, described later, and extends along the second side edge 502. The second straight line L2 is defined as a straight line passing through the third reference point P3 and the fourth reference point P4. The third reference point P3 is located in the second side edge region 54b of the middle portion 52, described later, and is close to the first end portion 51a. The third reference point P3 is the second intermediate mark 58b, described later, located in the second side edge region 54b of the middle portion 52 and closest to the first end portion 51a. The fourth reference point P4 is located in the second side edge region 54b of the middle portion 52 and is close to the second end portion 51b. The fourth reference point P4 is the second intermediate mark 58b, located in the second side edge region 54b of the middle portion 52 and closest to the second end portion 51b.

[0193] The second center line C20 is a straight line located between the third straight line L3 and the fourth straight line L4.

[0194] The third straight line L3 is defined as a straight line passing through the first reference point P1 and the third reference point P3.

[0195] The fourth straight line L4 is defined as a straight line passing through the second reference point P2 and the fourth reference point P4.

[0196] Straight lines L1 to L4, center lines C10 and C20, and center C1 are calculated by capturing an image of mask 50 in a plan view and analyzing the image based on multiple coordinates of points in middle portion 52. A measuring instrument such as AMIC-2500 manufactured by SINTO S-PRECISION can be used.

[0197] The first step 501a is caused by the difference between the steps for forming the middle portion 52 and the first end portion 51a. For example, the first step 501a is caused by the different exposure masks used to form the middle portion 52 and the first end portion 51a. The exposure mask used to form the middle portion 52 is also referred to as the first exposure mask. The exposure mask used to form the first end portion 51a is also referred to as the second exposure mask. If the relative position of the second exposure mask with respect to the first exposure mask deviates from the ideal position in the second direction D2, the first step 501a is generated by the amount of deviation.

[0198] The first step portion 501a has a dimension S1 in the second direction D2. The dimension S1 may be, for example, greater than 0.5 μm, greater than 2.5 μm, greater than 5.0 μm, or greater than 10 μm. The dimension S1 may be, for example, less than 50 μm, less than 100 μm, less than 200 μm, or less than 1 mm. The range of the dimension S1 may be defined by a first group consisting of 0.5 μm, 2.5 μm, 5.0 μm, and 10 μm and / or a second group consisting of 50 μm, 100 μm, 200 μm, and 1 mm. The range of the dimension S1 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the dimension S1 may be defined by a combination of any two of the values included in the first group. The range of the dimension S1 may be defined by a combination of any two of the values included in the second group. For example, the size S1 can be 0.5 μm to 1 mm, 0.5 μm to 200 μm, 0.5 μm to 100 μm, 0.5 μm to 50 μm, 0.5 μm to 10 μm, 0.5 μm to 5.0 μm, 0.5 μm to 2.5 μm, 2.5 μm to 1 mm, 2.5 μm to 200 μm, 2.5 μm to 100 μm, 2.5 μm to 50 μm, 2.5 μm to 10 μm, 2.5 μm to 5.0 μm, or 5.0 μm. It can be above 1mm or less, can be above 5.0μm and below 200μm, can be above 5.0μm and below 100μm, can be above 5.0μm and below 50μm, can be above 5.0μm and below 10μm, can be above 10μm and below 1mm, can be above 10μm and below 200μm, can be above 10μm and below 100μm, can be above 10μm and below 50μm, can be above 50μm and below 1mm, can be above 50μm and below 200μm, can be above 50μm and below 100μm, can be above 100μm and below 1mm, can be above 100μm and below 200μm, or can be above 200μm and below 1mm.

[0199] The size S1 is calculated by capturing an image of the mask 50 in a plan view and analyzing, based on the image, the coordinates of points on the first side edge 501. As a measuring instrument for calculating the size S1, AMIC-2500 manufactured by SINTO S-PRECISION can be used.

[0200] like Figure 5 and Figure 6As shown, the first end portion 51a may include a first mark 58c. The first mark 58c is formed simultaneously with the outer edge of the first end portion 51a in the first end portion forming step described later. Therefore, the first mark 58c can function as an indicator of the processing accuracy in the first end portion forming step.

[0201] The first mark 58c is located on the first surface 551 or the second surface 552. The first mark 58c is, for example, a recess formed on the first surface 551 or a recess formed on the second surface 552. The depth of the recess may be, for example, 2 μm or more, 3 μm or more, or 5 μm or more. The depth of the recess may be, for example, 10 μm or less, 20 μm or less, or 30 μm or less. The range of the depth of the recess may be defined by the first group consisting of 2 μm, 3 μm, and 5 μm and / or the second group consisting of 10 μm, 20 μm, and 30 μm. The range of the depth of the recess may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the depth of the recess may be defined by a combination of any two of the values included in the first group. The range of the depth of the recess may be defined by a combination of any two of the values included in the second group. For example, the depth of the recess may be greater than 2 μm and less than 30 μm, greater than 2 μm and less than 20 μm, greater than 2 μm and less than 10 μm, greater than 2 μm and less than 5 μm, greater than 2 μm and less than 3 μm, greater than 3 μm and less than 30 μm, greater than 3 μm and less than 20 μm, greater than 3 μm and less than 10 μm, greater than 3 μm and less than 5 μm, greater than 5 μm and less than 30 μm, greater than 5 μm and less than 20 μm, greater than 5 μm and less than 10 μm, greater than 10 μm and less than 30 μm, greater than 10 μm and less than 20 μm, or greater than 20 μm and less than 30 μm.

[0202] The first mark 58 c may be a through hole penetrating from the first surface 551 to the second surface 552 .

[0203] The size of the first mark 58c when viewed from above may be larger than the size r of the through portion 564 of the through-hole 56. The ratio of the size of the first mark 58c when viewed from above to the size r of the through portion 564 may be, for example, greater than 1.03, greater than 2.0, or greater than 5.0. The ratio of the size of the first mark 58c when viewed from above to the size r of the through portion 564 may be, for example, less than 5.0, less than 10, or less than 50. The range of the ratio of the size of the first mark 58c when viewed from above to the size r of the through portion 564 may be defined by the first group consisting of 1.03, 2.0, and 5.0 and / or the second group consisting of 5.0, 10, and 50. The range of the ratio of the size of the first mark 58c when viewed from above to the size r of the through portion 564 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the ratio of the size of the first mark 58c in a plan view to the size r of the through-portion 564 can be defined by a combination of any two values from the first group of values described above. The range of the ratio of the size of the first mark 58c in a plan view to the size r of the through-portion 564 can be defined by a combination of any two values from the second group of values described above. For example, the ratio of the size of the first mark 58c in a plan view to the size r of the through-portion 564 can be 1.03 or more and 50 or less, 1.03 or more and 10 or less, 1.03 or more and 5.0 or less, 1.03 or more and 5.0 or less, 1.03 or more and 2.0 or less, 2.0 or more and 50 or less, 2.0 or more and 10 or less, 2.0 or more and 5.0 or less, 2.0 or more and 5.0 or less, 5.0 or more and 50 or less, 5.0 or more and 10 or less, 5.0 or more and 50 or less, 5.0 or more and 10 or less, or 10 or more and 50 or less.

[0204] The first mark 58c may be located in the first side edge region 54a. The first side edge region 54a is located closer to the first side edge 501 than the through hole group 53 in the second direction D2. The first side edge region 54a extends along the first side edge 501, spanning the first end portion 51a, the middle portion 52, and the second end portion 51b.

[0205] like Figure 5 and Figure 6 As shown, the middle portion 52 may include a first middle mark 58a located in the first side edge region 54a. The middle portion 52 may include two or more first middle marks 58a arranged along the first direction D1. The first middle marks 58a are formed simultaneously with the outer edge of the middle portion 52 in the middle portion forming step described later.

[0206] The first intermediate mark 58a, like the first mark 58c, is located on the first surface 551 or the second surface 552. Like the first mark 58c, the first intermediate mark 58a may be a recess formed on the first surface 551, a recess formed on the second surface 552, or a through hole.

[0207] As the numerical range of the size of the first intermediate mark 58 a , the numerical range of the size of the first mark 58 c described above can be adopted.

[0208] like Figure 6 As shown, the intermediate portion 52 can be designed so that two or more first intermediate marks 58a are located on the first straight line L1. The first straight line L1 can be drawn as a straight line approximating the two or more first intermediate marks 58a. In this case, the amount of deviation of the first intermediate marks 58a from the first straight line L1 serves as an indicator of the machining accuracy during the intermediate portion forming step. For example, when the machining accuracy during the intermediate portion forming step is high, the multiple first intermediate marks 58a accurately overlap with the first straight line L1. When the machining accuracy during the intermediate portion forming step is low, the deviation of the first intermediate marks 58a from the first straight line L1 becomes greater.

[0209] like Figure 6 As shown, the distance G1 between the first mark 58c and the first straight line L1 in the second direction D2 can be calculated. Distance G1 can serve as an indicator of processing accuracy in the first end portion forming step. For example, if the relative position of the second exposure mask relative to the first exposure mask in the second direction D2 deviates from the ideal position, distance G1 deviates from the ideal value. When the first end portion 51a is designed so that the first mark 58c is located on the first straight line L1, the ideal value of distance G1 is zero. In this case, distance G1 can serve as an indicator of the deviation of the relative position of the first end portion 51a with respect to the middle portion 52. Distance G1 can be, for example, less than 1 mm, less than 200 μm, less than 100 μm, less than 50 μm, less than 20 μm, less than 10 μm, less than 5.0 μm, or less than 3.0 μm.

[0210] The machining accuracy in the first end portion forming step can be evaluated based on the coordinates of the first mark 58 c relative to the center C1. For example, if the relative position of the second exposure mask with respect to the first exposure mask deviates from the ideal position in the second direction D2, the coordinates of the first mark 58 c deviate from the ideal coordinates in the second direction.

[0211] Figure 6In the figure, reference numeral S3 represents the distance from the first step portion 501a to the through hole group 53 in the first direction D1. The distance S3 may be, for example, greater than 100 μm, greater than 300 μm, greater than 1 mm, or greater than 3 mm. The distance S3 may be, for example, less than 10 mm, less than 30 mm, less than 100 mm, or less than 200 mm. The range of the distance S3 may be defined by the first group consisting of 100 μm, 300 μm, 1 mm, and 3 mm and / or the second group consisting of 10 mm, 30 mm, 100 mm, and 200 mm. The range of the distance S3 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the distance S3 may be defined by a combination of any two of the values included in the first group. The range of the distance S3 may be defined by a combination of any two of the values included in the second group. For example, the distance S3 may be greater than or equal to 100 μm and less than 200 mm, greater than or equal to 100 μm and less than 100 mm, greater than or equal to 100 μm and less than 30 mm, greater than or equal to 100 μm and less than 10 mm, greater than or equal to 100 μm and less than 3 mm, greater than or equal to 100 μm and less than 1 mm, greater than or equal to 100 μm and less than 300 μm, greater than or equal to 300 μm and less than 30 mm, greater than or equal to 300 μm and less than 10 mm, greater than or equal to 300 μm and less than 3 mm, greater than or equal to 300 μm and less than 1 mm, or greater than or equal to 1 mm. It can be above 200mm and below, it can be above 1mm and below 100mm, it can be above 1mm and below 30mm, it can be above 1mm and below 10mm, it can be above 1mm and below 3mm, it can be above 3mm and below 200mm, it can be above 3mm and below 100mm, it can be above 3mm and below 30mm, it can be above 3mm and below 10mm, it can be above 10mm and below 200mm, it can be above 10mm and below 100mm, it can be above 10mm and below 30mm, it can be above 30mm and below 200mm, it can be above 30mm and below 100mm, or it can be above 100mm and below 200mm.

[0212] Figure 6In the figure, reference numeral S5 represents the minimum value of the distance from the first step portion 501a to the first intermediate mark 58a in the first direction D1. The minimum value S5 may be, for example, greater than 100 μm, greater than 300 μm, or greater than 1 mm. The minimum value S5 may be, for example, less than 2 mm, less than 3 mm, or less than 5 mm. The range of the minimum value S5 may be defined by the first group consisting of 100 μm, 300 μm, and 1 mm and / or the second group consisting of 2 mm, 3 mm, and 5 mm. The range of the minimum value S5 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the minimum value S5 may be defined by a combination of any two of the values included in the first group. The range of the minimum value S5 may be defined by a combination of any two of the values included in the second group. For example, the minimum value S5 can be greater than 100 μm and less than 5 mm, greater than 100 μm and less than 3 mm, greater than 100 μm and less than 2 mm, greater than 100 μm and less than 1 mm, greater than 100 μm and less than 300 μm, greater than 300 μm and less than 5 mm, greater than 300 μm and less than 3 mm, greater than 300 μm and less than 2 mm, greater than 300 μm and less than 1 mm, greater than 1 mm and less than 5 mm, greater than 1 mm and less than 3 mm, greater than 1 mm and less than 2 mm, greater than 2 mm and less than 5 mm, greater than 2 mm and less than 3 mm, or greater than 3 mm and less than 5 mm.

[0213] like Figure 5 and Figure 6 As shown, the second side edge 502 of the mask 50 may include a second step portion 502a located at the boundary between the middle portion 52 and the first end portion 51a. The second step portion 502a is displaced in the second direction D2 in the same manner as the first step portion 501a. Figure 5 and Figure 6 In the example shown, the second step portion 502a is displaced inward in the second direction D2 when it is directed outward in the first direction D1. In other words, the second side edge 502 of the first end portion 51a is located inward of the second side edge 502 of the middle portion 52. "Inside" refers to the side closer to the center of the mask 50. "Inside in the first direction D1" refers to the side closer to the center of the mask 50 in the first direction D1. "Inside in the second direction D2" refers to the side closer to the center of the mask 50 in the second direction D2. In the following description, "the step portion that is displaced inward in the second direction D2 when it is directed outward in the first direction D1" is also referred to as the inner step portion. The inner step portion is preferably located outside the through-hole group 53 in the second direction D2.

[0214] The second step portion 502a, like the first step portion 501a, is formed by the difference between the steps for forming the intermediate portion 52 and the first end portion 51a. The second step portion 502a has a dimension S2 in the second direction D2. The numerical range of dimension S2 can be the same as the numerical range of dimension S1 described above.

[0215] like Figure 5 and Figure 6 As shown, the first end portion 51a may include a second mark 58d located in the second side edge region 54b. The second side edge region 54b is located on the second side edge 502 side of the through hole group 53 in the second direction D2. The second side edge region 54b extends along the second side edge 502 across the first end portion 51a, the middle portion 52, and the second end portion 51b.

[0216] Like the first mark 58c, the second mark 58d is formed simultaneously with the outer edge of the first end portion 51a in the first end portion forming step described later. Like the first mark 58c, the second mark 58d is located on either the first surface 551 or the second surface 552. Like the first mark 58c, the second mark 58d can be a recess formed in the first surface 551 or the second surface 552, or a through-hole. The numerical range for the dimensions of the second mark 58d can be the same as that for the dimensions of the first mark 58c described above.

[0217] like Figure 5 and Figure 6 As shown, the middle portion 52 may include a second middle mark 58b located in the second side edge region 54b. The middle portion 52 may include two or more second middle marks 58b arranged along the first direction D1. Like the first middle marks 58a, the second middle marks 58b are formed simultaneously with the outer edge of the middle portion 52 in the middle portion forming step described below.

[0218] Second intermediate mark 58b, like first mark 58c, is located on first surface 551 or second surface 552. Like first mark 58c, second intermediate mark 58b can be a recess formed on first surface 551, a recess formed on second surface 552, or a through-hole. The numerical range for the dimensions of second intermediate mark 58b can be the same as the numerical range for the dimensions of first mark 58c described above.

[0219] like Figure 6 As shown, the intermediate portion 52 may be designed so that two or more second intermediate marks 58b are located on the second straight line L2. The second straight line L2 may be drawn as an approximate straight line of the two or more second intermediate marks 58b.

[0220] like Figure 6As shown, the distance G2 between the second mark 58d and the second straight line L2 in the second direction D2 can be calculated. When the first end portion 51a is designed so that the second mark 58d is located on the second straight line L2, the ideal value of distance G2 is zero. Distance G2 can be, for example, 1 mm or less, 200 μm or less, 100 μm or less, 50 μm or less, 20 μm or less, 10 μm or less, or 5 μm or less.

[0221] Figure 6 In FIG. 5 , reference numeral S4 represents the distance in the first direction D1 from the second step portion 502a to the through-hole group 53. As the numerical range of the distance S4, the numerical range of the distance S3 described above can be adopted.

[0222] Figure 6 In FIG. 5 , reference numeral S6 represents the minimum value of the distance from the second step portion 502a to the second intermediate mark 58b in the first direction D1. The numerical range of the minimum value S6 can be the same as the numerical range of the minimum value S5 described above.

[0223] like Figure 5 As shown, the first side edge 501 may include a first step portion 501a located at the boundary between the middle portion 52 and the second end portion 51b. The second side edge 502 may include a second step portion 502a located at the boundary between the middle portion 52 and the second end portion 51b. Figure 5 In the illustrated example, the first step portion 501a located at the boundary between the middle portion 52 and the second end portion 51b is an outer step portion, and the second step portion 502a located at the boundary between the middle portion 52 and the second end portion 51b is an inner step portion.

[0224] The structures of the first step portion 501a and the second step portion 502a located at the boundary between the middle portion 52 and the second end portion 51b are the same as the structures of the first step portion 501a and the second step portion 502a located at the boundary between the middle portion 52 and the first end portion 51a, so detailed description is omitted.

[0225] like Figure 5 As shown, the second end portion 51b may include a first mark 58c located in the first side edge region 54a. The second end portion 51b may include a second mark 58d located in the second side edge region 54b.

[0226] The configurations of the first mark 58c and the second mark 58d of the second end portion 51b are the same as those of the first mark 58c and the second mark 58d of the first end portion 51a, and therefore detailed description thereof will be omitted.

[0227] Next, the cross-sectional structure of the mask 50 will be described. Figure 7 Observed from the AA direction Figure 6 50 is a cross-sectional view of the mask.

[0228] The mask 50 includes a base material 55 and a through hole 56 penetrating the base material 55. The base material 55 includes a first surface 551 and a second surface 552. The through hole 56 penetrates the base material 55 from the first surface 551 to the second surface 552.

[0229] The through-hole 56 may include a first recess 561, a second recess 562, and a connecting portion 563 connecting the first recess 561 and the second recess 562. The first recess 561 is located on the first surface 551 and is recessed toward the second surface 552. The second recess 562 is located on the second surface 552 and is recessed toward the first surface 551. The connection between the first recess 561 and the second recess 562 forms the through-hole 56 that penetrates the substrate 55. The first recess 561 is formed by processing the substrate 55 from the first surface 551 side using etching or a laser. The second recess 562 is formed by processing the substrate 55 from the second surface 552 side using etching or a laser.

[0230] The first recess 561 has a dimension r1 in a plan view. The second recess 562 has a dimension r2 in a plan view. Dimension r2 may be larger than dimension r1. For example, the outline of the second recess 562 may surround the outline of the first recess 561 in a plan view.

[0231] The connecting portion 563 may have a continuous contour around the entire circumference. The connecting portion 563 may be located between the first surface 551 and the second surface 552. The connecting portion 563 may define a through-hole 564 having the smallest opening area when the mask 50 is viewed from above.

[0232] The dimension r of the through portion 564 may be, for example, greater than 10 μm, greater than 15 μm, greater than 20 μm, or greater than 25 μm. Furthermore, the dimension r of the through portion 564 may be, for example, less than 40 μm, less than 45 μm, less than 50 μm, or less than 55 μm. The range of the dimension r of the through portion 564 may be defined by a first group consisting of 10 μm, 15 μm, 20 μm, and 25 μm and / or a second group consisting of 40 μm, 45 μm, 50 μm, and 55 μm. The range of the dimension r of the through portion 564 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the dimension r of the through portion 564 may be defined by a combination of any two of the values included in the first group. The range of the dimension r of the through portion 564 may be defined by a combination of any two of the values included in the second group. For example, the size r of the through portion 564 may be 10 μm to 55 μm, 10 μm to 50 μm, 10 μm to 45 μm, 10 μm to 40 μm, 10 μm to 25 μm, 10 μm to 20 μm, 10 μm to 15 μm, 15 μm to 55 μm, 15 μm to 50 μm, 15 μm to 45 μm, 15 μm to 40 μm, 15 μm to 25 μm, 15 μm to 20 μm, or 20 μm to 50 μm. 5μm or less, can be 20μm or more and 50μm or less, can be 20μm or more and 45μm or less, can be 20μm or more and 40μm or less, can be 20μm or more and 25μm or less, can be 25μm or more and 55μm or less, can be 25μm or more and 50μm or less, can be 25μm or more and 45μm or less, can be 25μm or more and 40μm or more, can be 40μm or more and 55μm or less, can be 40μm or more and 50μm or less, can be 40μm or more and 45μm or less, can be 45μm or more and 55μm or less, can be 45μm or more and 50μm or more and 50μm or 55μm or less.

[0233] The dimension r of the through portion 564 can be defined by light passing through the through hole 56. Specifically, parallel light is incident on one of the first surface 551 or the second surface 552 of the mask 50 along the normal direction of the mask 50, passes through the through hole 56, and is emitted from the other of the first surface 551 or the second surface 552. The dimension r of the through portion 564 can be determined by the dimension of the area occupied by the emitted light in the surface direction of the mask 50.

[0234] Figure 7, an example is shown in which the second surface 552 of the substrate 55 remains between two adjacent second recesses 562, but the present invention is not limited to this. Although not shown, etching can also be performed so that two adjacent second recesses 562 are connected. In other words, a portion of the second surface 552 of the substrate 55 does not remain between two adjacent second recesses 562.

[0235] like Figure 7 As shown in FIG, similarly to the through hole 56, the first end 503 may include a recessed portion formed on the surface of the substrate 55. Figure 7 In the example shown, the first end 503 includes a third recess 571 located on the first surface 551 and a fourth recess 572 located on the second surface 552. The third recess 571 and the fourth recess 572 are formed by processing the substrate 55 using etching or laser, similar to the first recess 561 and the second recess 562.

[0236] Although not shown, the first end 503 may include the fourth recess 572 located on the second surface 552 but not the third recess 571 located on the first surface 551. In this case, the first end 503 is formed by processing the substrate 55 from the second surface 552 side by etching or the like so that the fourth recess 572 reaches the first surface 551.

[0237] Although not shown, outer edges such as the first side edge 501 , the second side edge 502 , and the second end 504 may include a recessed portion formed on the surface of the base material 55 , similarly to the first end 503 .

[0238] The materials of the mask 50 and the frame 41 are described. As the main material of the mask 50 and the frame 41, an iron alloy containing nickel can be used. The iron alloy may also contain cobalt in addition to nickel. For example, as the material of the base material 55 of the mask 50, an iron alloy in which the total content of nickel and cobalt is greater than 28% by mass and less than 54% by mass, and the content of cobalt is greater than 0% by mass and less than 6% by mass can be used. As a result, the difference between the thermal expansion coefficient of the mask 50 and the frame 41 and the thermal expansion coefficient of the substrate 110 containing glass can be reduced. Therefore, it is possible to suppress the reduction in the dimensional accuracy or positional accuracy of the vapor-deposited layer formed on the substrate 110 due to the thermal expansion of the mask 50, the frame 41, the substrate 110, etc.

[0239] The total content of nickel and cobalt in the substrate 55 may be 28% to 38% by mass. In this case, specific examples of iron alloys containing nickel or nickel and cobalt include Invar, Super-Invar, and Ultra-Invar. Invar is an iron alloy containing 34% to 38% by mass of nickel, with the remainder being iron and unavoidable impurities. Super-Invar is an iron alloy containing 30% to 34% by mass of nickel, cobalt, and the remainder being iron and unavoidable impurities. Super-Invar is an iron alloy containing 28% to 34% by mass of nickel, 2% to 7% by mass of cobalt, 0.1% to 1.0% by mass of manganese, 0.10% to 0.1% by mass of silicon, 0.01% to 0.1% by mass of carbon, and the remainder being iron and unavoidable impurities.

[0240] The total content of nickel and cobalt in the mask 50 may be 38% to 54% by mass. For example, the mask 50 may be made of an iron alloy containing 38% to 54% by mass of nickel, with the remainder being iron and unavoidable impurities. Such a mask 50 may be manufactured by plating.

[0241] It should be noted that, during the vapor deposition process, if the temperatures of the mask 50, frame 41, and substrate 110 do not reach a high temperature, it is not necessary to specifically set the thermal expansion coefficients of the mask 50 and frame 41 to the same value as the thermal expansion coefficient of the substrate 110. In this case, materials other than the above-mentioned iron alloys can be used as the material constituting the mask 50. For example, iron alloys other than the above-mentioned iron alloys containing nickel, such as iron alloys containing chromium, can be used. As iron alloys containing chromium, for example, iron alloys known as stainless steel can be used. In addition, alloys other than iron alloys, such as nickel or nickel-cobalt alloys, can be used.

[0242] The thickness T of the mask 50 may be, for example, 8 μm or more, 10 μm or more, 13 μm or more, or 15 μm or more. In addition, the thickness T may be, for example, 20 μm or less, 30 μm or less, 40 μm or less, or 50 μm or less. The range of the thickness T may be defined by the first group consisting of 8 μm, 10 μm, 13 μm, and 15 μm and / or the second group consisting of 20 μm, 30 μm, 40 μm, and 50 μm. The range of the thickness T may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the thickness T may be defined by a combination of any two of the values included in the first group. The range of the thickness T may be defined by a combination of any two of the values included in the second group. For example, the thickness T may be 8 μm to 50 μm, 8 μm to 40 μm, 8 μm to 30 μm, 8 μm to 20 μm, 8 μm to 15 μm, 8 μm to 13 μm, 8 μm to 10 μm, 10 μm to 50 μm, 10 μm to 40 μm, 10 μm to 30 μm, 10 μm to 20 μm, 10 μm to 15 μm, 10 μm to 13 μm, 13 μm to 50 μm, or 10 μm to 50 μm. It can be above 13μm and below 40μm, above 13μm and below 30μm, above 13μm and below 20μm, above 13μm and below 15μm, above 15μm and below 50μm, above 15μm and below 40μm, above 15μm and below 30μm, above 15μm and below 20μm, above 20μm and below 50μm, above 20μm and below 40μm, above 20μm and below 30μm, above 30μm and below 50μm, above 30μm and below 40μm, or above 40μm and below 50μm.

[0243] By setting the thickness T to 50 μm or less, the proportion of the vapor deposition material 7 that hangs on the wall surface of the through-hole 56 before passing through the through-hole 56 can be reduced. This improves the utilization efficiency of the vapor deposition material 7. In addition, by setting the thickness T to 8 μm or more, the strength of the mask 50 can be ensured, thereby preventing damage or deformation of the mask 50.

[0244] A contact measurement method can be used to measure the thickness T. As the contact measurement method, a length gauge "MT1271" manufactured by HEIDENHAIM-METRO, which has a ball bushing-guided plunger, is used.

[0245] Next, the method for manufacturing the mask 50 is described. First, a substrate is prepared. The substrate can be prepared by winding a substrate extending in the first direction D1 onto a roll. In this case, the substrate unwound from the roll is transported to an exposure device, a developing device, an etching device, etc. The substrate is transported intermittently each time processing in the exposure device, the developing device, the etching device, etc. is completed.

[0246] Next, the base material is processed to produce the mask 50. Multiple masks 50 are produced from one base material. For example, multiple masks 50 are produced from a roll of base material. In the following description, the base material used to produce the mask 50 is referred to as the original base material and is indicated by reference numeral 55A.

[0247] The method for manufacturing mask 50 includes a middle portion forming step, a first end portion forming step, and a second end portion forming step. The middle portion forming step forms through-hole 56 and the outer edge of middle portion 52 in original substrate 55A. The middle portion forming step may also form middle marks 58a and 58b in original substrate 55A. The first end portion forming step forms marks 58c and 58d and the outer edge of first end portion 51a in original substrate 55A. The second end portion forming step forms marks 58c and 58d and the outer edge of second end portion 51b in original substrate 55A.

[0248] The intermediate portion forming step includes a resist layer forming process, a first exposure process, a development process, an etching process, and a resist removing process.

[0249] The first end portion forming step includes a resist layer forming process, a second exposure process, a development process, an etching process, and a resist removing process.

[0250] The second end portion forming step includes a resist layer forming process, a third exposure process, a development process, an etching process, and a resist removing process.

[0251] The resist layer forming process, development process, etching process, and resist removal process may also be processes commonly used in the intermediate portion forming step, the first end portion forming step, and the second end portion forming step. For example, the resist layer forming process may simultaneously form a resist layer in the regions of the original substrate 55A corresponding to the intermediate portion 52, the first end portion 51a, and the second end portion 51b. The development process, etching process, and resist removal process may simultaneously process the resist layer in the regions of the original substrate 55A corresponding to the intermediate portion 52, the first end portion 51a, and the second end portion 51b, respectively.

[0252] The second exposure process and the third exposure process are performed at a different time from the first exposure process. The second exposure process and the third exposure process may be performed at the same time or at different times.

[0253] After the original substrate 55A is prepared, a resist layer forming process is performed. Figure 8 As shown, the resist layer forming process provides a resist layer on the surface of the original substrate 55. The resist layer may include a first resist layer 61 located on the first surface 551 and a second resist layer 62 located on the second surface 552.

[0254] It should be noted that in Figure 8 In the cross-sectional view for explaining the manufacturing process of the mask 50, a dashed line is drawn at the boundary between the region of the original base material 55 where the first end portion 51a is formed and the region of the original base material 55A where the middle portion 52 is formed.

[0255] The resist layer may be formed by applying a solution containing a resist material to the surface of the original base material 55A and curing it. Alternatively, the resist layer may be formed by attaching a film such as a dry film to the surface of the original base material 55A.

[0256] The coating type resist layer is formed by applying a solution containing a photosensitive material to the surface of the original substrate 55A and curing it. At this time, a resist layer firing process can be performed to fire the resist layer. The photosensitive material can be a photosoluble type, i.e., a so-called positive type, or a photocurable type, i.e., a so-called negative type.

[0257] Examples of positive photosensitive materials include novolac-based positive resists such as SC500, and examples of negative photosensitive materials include casein resists.

[0258] The thickness of the resist layer may be, for example, 1 μm or more, 2 μm or more, or 3 μm or more. The thickness of the resist layer may be, for example, 5 μm or less, 7 μm or less, or 10 μm or less. The range of the thickness of the resist layer may be defined by the first group consisting of 1 μm, 2 μm, and 3 μm and / or the second group consisting of 5 μm, 7 μm, and 10 μm. The range of the thickness of the resist layer may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the thickness of the resist layer may be defined by a combination of any two of the values included in the first group. The range of the thickness of the resist layer may be defined by a combination of any two of the values included in the second group. For example, the thickness of the resist layer can be greater than 1 μm and less than 10 μm, greater than 1 μm and less than 7 μm, greater than 1 μm and less than 5 μm, greater than 1 μm and less than 3 μm, greater than 1 μm and less than 2 μm, greater than 2 μm and less than 10 μm, greater than 2 μm and less than 7 μm, greater than 2 μm and less than 5 μm, greater than 2 μm and less than 3 μm, greater than 3 μm and less than 10 μm, greater than 3 μm and less than 7 μm, greater than 3 μm and less than 5 μm, greater than 5 μm and less than 10 μm, greater than 5 μm and less than 7 μm, or greater than 7 μm and less than 10 μm.

[0259] Next, the first exposure process is performed. Figure 9A and Figure 9B As shown, the first exposure process uses a first exposure mask to expose the resist layer on the original substrate 55A. The first exposure mask exposes the resist layer located in the area corresponding to the middle portion 52. The first exposure mask can include a first-side first exposure mask 711 for exposing the first resist layer 61, and a second-side first exposure mask 712 for exposing the second resist layer 62.

[0260] like Figure 9A As shown, the first exposure mask can have a rectangular shape including a first side and a second side. The first side can extend in the direction in which the original substrate 55A is transported. The second side can extend in a direction perpendicular to the direction in which the original substrate 55A is transported. The dimension of the first side is also referred to as the length and is denoted by the symbol Y1. The dimension of the second side is also referred to as the width and is denoted by the symbol W1. The transport direction of the original substrate 55A can be parallel to the first direction D1 of the mask 50.

[0261] The width W1 of the first exposure mask may be larger than the width W0 of the original substrate 55A. The width W0 is the dimension of the original substrate 55A in a direction perpendicular to the direction in which the original substrate 55A is conveyed.

[0262] The width W0 of the original substrate 55A can be determined, for example, in consideration of the availability of the first exposure mask. The width W0 can be, for example, greater than 100 mm, greater than 200 mm, or greater than 400 mm. The width W0 can be, for example, less than 600 mm, less than 800 mm, or less than 1000 mm. The range of the width W0 can be defined by the first group consisting of 100 mm, 200 mm, and 400 mm and / or the second group consisting of 600 mm, 800 mm, and 1000 mm. The range of the width W0 can be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the width W0 can be defined by a combination of any two of the values included in the first group. The range of the width W0 can be defined by a combination of any two of the values included in the second group. For example, the width W0 can be greater than 100 mm and less than 1000 mm, greater than 100 mm and less than 800 mm, greater than 100 mm and less than 600 mm, greater than 100 mm and less than 400 mm, greater than 100 mm and less than 200 mm, greater than 200 mm and less than 1000 mm, greater than 200 mm and less than 800 mm, greater than 200 mm and less than 600 mm, greater than 200 mm and less than 400 mm, greater than 400 mm and less than 1000 mm, greater than 400 mm and less than 800 mm, greater than 400 mm and less than 600 mm, greater than 600 mm and less than 1000 mm, greater than 600 mm and less than 800 mm, or greater than 800 mm and less than 1000 mm.

[0263] The width W1 of the first exposure mask can be, for example, 400 mm or more, 600 mm or more, 800 mm or more, or 1100 mm or more. The width W1 can be, for example, less than 600 mm, less than 1000 mm, less than 1100 mm, or less than 1400 mm. The range of the width W1 can be defined by the first group consisting of 400 mm, 600 mm, 800 mm, and 1100 mm and / or the second group consisting of 600 mm, 1000 mm, 1100 mm, and 1400 mm. The range of the width W1 can be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the width W1 can be defined by a combination of any two of the values included in the first group. The range of the width W1 can be defined by a combination of any two of the values included in the second group. For example, the width W1 can be greater than 400 mm and less than 1400 mm, greater than 400 mm and less than 1100 mm, greater than 400 mm and less than 1000 mm, greater than 400 mm and less than 800 mm, greater than 400 mm and less than 600 mm, greater than 600 mm and less than 1400 mm, greater than 600 mm and less than 1100 mm, greater than 600 mm and less than 1000 mm, greater than 600 mm and less than 800 mm, greater than 800 mm and less than 1400 mm, greater than 800 mm and less than 1100 mm, greater than 800 mm and less than 1000 mm, greater than 1000 mm and less than 1400 mm, greater than 1000 mm and less than 1100 mm, or greater than 1100 mm and less than 1400 mm.

[0264] The first exposure mask has a length Y1. Length Y1 is the dimension of the first exposure mask in the direction in which the original substrate 55A is conveyed. Length Y1 may be greater or less than width W1. Length Y1 corresponds to dimension M12 of the middle portion 52 of the mask 50. The range of values for length Y1 can be the same as the range of values for dimension M12 described above.

[0265] Figure 10A and Figure 10B The figure shows a top view and a cross-sectional view of an example of a resist layer exposed through a first exposure mask. The exposed first resist layer 61 includes a first developing layer 61a. The first developing layer 61a is the portion of the first resist layer 61 that is removed by development. If the first resist layer 61 is made of a positive-type photosensitive material, the portion exposed to the exposure light becomes the first developing layer 61a. If the first resist layer 61 is made of a negative-type photosensitive material, the portion not exposed to the exposure light becomes the first developing layer 61a and is removed during the development process.

[0266] Similar to the first resist layer 61, the second resist layer 62 includes a second developing layer 62a. The second developing layer 62a is the portion of the second resist layer 62 that is removed by development. If the second resist layer 62 is made of a positive-type photosensitive material, the portion exposed to the exposure light becomes the second developing layer 62a. If the second resist layer 62 is made of a negative-type photosensitive material, the portion not exposed to the exposure light becomes the second developing layer 62a and is removed during the development process.

[0267] like Figure 10A As shown, the second developed layer 62a produced by the first exposure process is located in the region of the second resist layer 62 corresponding to the outer edge of the intermediate portion 52, the through-hole 56, and the intermediate marks 58a and 58b. Although not shown, the first developed layer 61a produced by the first exposure process is also located in the region of the first resist layer 61 corresponding to the outer edge of the intermediate portion 52, the through-hole 56, and the intermediate marks 58a and 58b.

[0268] Then, the second exposure process is performed. Figure 11A and Figure 11B As shown, the second exposure process uses a second exposure mask to expose the resist layer on the original substrate 55A. The second exposure mask exposes the resist layer located in the area corresponding to the first end 51a. The second exposure mask can include a first-side second exposure mask 721 for exposing the first resist layer 61, and a second-side second exposure mask 722 for exposing the second resist layer 62.

[0269] In the second exposure process, the second exposure mask can be moved using a drive device to align the second exposure mask with respect to the original substrate 55A. The drive device is configured to precisely adjust the position of the exposure mask. For example, the drive device can include a microactuator. Microactuators can include electrostatic actuators, electromagnetic actuators, piezoelectric actuators, thermal expansion actuators, and the like.

[0270] During the second exposure process, the position of the second exposure mask can be adjusted using the first developed layer 61a corresponding to the alignment mark produced during the first exposure process as a reference. For example, the second exposure mask can be aligned so that the first developed layer 61a corresponding to the alignment mark aligns with the alignment mark of the second exposure mask. The position of the first developed layer 61a corresponding to the alignment mark and the position of the alignment mark of the second exposure mask can be calculated by processing an image captured by a camera. The resolution of the image processing can be, for example, 0.5 μm or less, 0.3 μm or less, or 0.1 μm or less.

[0271] During the second exposure process, the position of the second exposure mask can be adjusted using the second developed layer 62a corresponding to the alignment mark produced during the first exposure process as a reference. For example, the second exposure mask can be aligned so that the second developed layer 62a corresponding to the alignment mark aligns with the alignment mark on the second exposure mask. The position of the second developed layer 62a corresponding to the alignment mark and the position of the alignment mark on the second exposure mask can be calculated by processing an image captured by a camera. The resolution of the image processing can be, for example, 0.5 μm or less, 0.3 μm or less, or 0.1 μm or less.

[0272] One or more first intermediate marks 58a can function as alignment marks. One or more second intermediate marks 58b can function as alignment marks. One or more first marks 58c can function as alignment marks. One or more second marks 58d can function as alignment marks. A combination of two or more of these four types of marks can function as alignment marks.

[0273] If the first resist layer 61 is made of a positive photosensitive material, the portion not exposed to the exposure light becomes the first residual layer. If the first resist layer 61 is made of a negative photosensitive material, the portion exposed to the exposure light becomes the first residual layer. In the second exposure process, the position of the second exposure mask can be adjusted using the contour of the first residual layer as a reference.

[0274] Similar to the first developed layer 61a, the shape of the second developed layer 62a can be identified based on the difference between the second developed layer 62a and the second residual layer. The second residual layer is the portion of the second resist layer 62 that remains after the development process. In the second exposure process, the position of the second exposure mask can be adjusted using the contour of the second residual layer as a reference.

[0275] In addition, a third exposure process is performed. In this process, the resist layer on the original substrate 55A is exposed using a third exposure mask. The third exposure mask exposes the resist layer located in the area corresponding to the second end portion 51b. The third exposure mask can include a first-side third exposure mask (not shown) for exposing the first resist layer 61, and a second-side third exposure mask 732 for exposing the second resist layer 62.

[0276] In the third exposure process, the third exposure mask may be moved by the aforementioned driving device, thereby performing alignment of the third exposure mask with respect to the original substrate 55A.

[0277] Figure 12A and Figure 12B It is a top view and a cross-sectional view showing an example of the resist layer exposed through the second exposure mask and the third exposure mask.

[0278] like Figure 12A As shown, the second developed layer 62a produced by the second exposure process is located in the region of the second resist layer 62 corresponding to the outer edge of the first end portion 51a and the marks 58c and 58d. Although not shown, the first developed layer 61a produced by the second exposure process is located in the region of the first resist layer 61 corresponding to the outer edge of the first end portion 51a and the marks 58c and 58d.

[0279] like Figure 12A As shown, the second developed layer 62a produced by the third exposure process is located in the region of the second resist layer 62 corresponding to the outer edge of the second end portion 51b and the marks 58c and 58d. Although not shown, the first developed layer 61a produced by the third exposure process is located in the region of the first resist layer 61 corresponding to the outer edge of the second end portion 51b and the marks 58c and 58d.

[0280] Next, a development process is performed to remove the first development layer 61 a and the second development layer 62 a .

[0281] Next, an etching process is performed. The etching process etches the original substrate 55 using the exposed and developed first resist layer 61 and second resist layer 62. The etching process can include a first-side etching process for etching the first surface 551 and a second-side etching process for etching the second surface 552. For example, a solution containing ferric chloride solution and hydrochloric acid can be used as the etching solution.

[0282] Figure 13 This is a cross-sectional view showing an example of the original substrate 55 after etching. A first recess 561 and a third recess 571 are formed on the first surface 551 through the first-side etching process. A second recess 562 and a fourth recess 572 are formed on the second surface 552 through the second-side etching process. The first recess 561 and the second recess 562 are connected to form a through-hole 56. The third recess 571 and the fourth recess 572 are connected to form a through-hole. The through-hole formed by the third recess 571 and the fourth recess 572, which marks the outer edge of the mask 50, is also referred to as an outer edge hole. The outer edge hole that marks the outer edge of the first end portion 51a is also referred to as a second outer edge hole and is indicated by the reference numeral 592. The outer edge hole that marks the outer edge of the middle portion 52 is also referred to as a first outer edge hole. The outer edge hole that marks the outer edge of the second end portion 51b is also referred to as a third outer edge hole. Although not shown, the first intermediate mark 58 a , the second intermediate mark 58 b , the first mark 58 c , and the second mark 58 d are also formed by an etching process.

[0283] like Figure 13 As shown, the first recess 561 and the third recess 571 may be filled with the resin 65 after the first surface etching process and before the second surface etching process.

[0284] Next, a resist layer removal process is performed. This removes the first resist layer 61 and the second resist layer 62. Furthermore, a process for removing the resin 65 is performed. The resin 65 can be removed simultaneously with the first resist layer 61 and the second resist layer 62.

[0285] Figure 14A and Figure 14B 1 and 2 are top views and cross-sectional views of the original substrate 55A after the first resist layer 61 and the second resist layer 62 are removed. The original substrate 55A includes: a through hole group 53 including a through hole 56; an outer edge hole that marks the outer edge of the mask 50; and marks 58a, 58b, 58c, and 58d. Figure 14A As shown, the outer edge holes include: a first outer edge hole 591 indicating the outer edge of the middle portion 52; a second outer edge hole 592 indicating the outer edge of the first end portion 51a; and a third outer edge hole 593 indicating the outer edge of the second end portion 51b.

[0286] like Figure 14A As shown in FIG. 5 , a bridge portion 595 is connected to the outer edge of the mask 50. Figure 14A In the example shown, the bridge portion 595 is connected to the first end 503 and the second end 504 .

[0287] Bridge 595 is a portion that crosses the outer edge hole of the original substrate 55A. Bridge 595 connects the outer edge of the mask 50 to the surrounding original substrate 55A. The provision of bridge 595 prevents the mask 50 from falling off the original substrate 55A. By breaking bridge 595, the mask 50 can be removed from the original substrate 55A.

[0288] In this embodiment, as described above, the resist layer in the middle portion 52 is exposed using the first exposure mask. Separately, the resist layer in the first end portion 51a is exposed using a second exposure mask, which is different from the first exposure mask. Consequently, compared to the case where a single exposure mask is used to form the entire mask 50, the dimension M12 of the middle portion 52 can be increased. Consequently, the dimension M11 of the mask 50 can be increased while using readily available exposure masks. In other words, the dimension M11 of the mask 50 can be increased while reducing the investment in manufacturing equipment for the mask 50.

[0289] However, since the resist layer at the first end portion 51a is exposed using a second exposure mask different from the first exposure mask, the relative position of the second exposure mask with respect to the first exposure mask may deviate from the ideal position. Consequently, the position of the second outer edge hole 592 defining the first side edge 501 of the first end portion 51a may deviate in the second direction D2 relative to the position of the first outer edge hole 591 defining the first side edge 501 of the middle portion 52. As a result, the aforementioned first step portion 501a is generated at the first side edge 501.

[0290] In this embodiment, the first end portion 51a has a first mark 58c. By detecting the position of the first mark 58c, the degree of deviation of the second exposure mask relative to the first exposure mask can be verified. For example, the degree of deviation can be verified based on the distance G1 between the first mark 58c and the first straight line L1 described above.

[0291] The method for manufacturing the mask 50 may include a screening step for screening the masks 50 based on the distance G1. In the screening step, for example, masks 50 having a distance G1 below a threshold are screened as acceptable products. The threshold may be, for example, 4 mm, 2 mm, 1 mm, 200 μm, 100 μm, 50 μm, 20 μm, 10 μm, or 5 μm.

[0292] Next, a method for manufacturing the mask apparatus 15 will be described. First, the frame 41 is prepared. Then, the mask 50 is secured to the frame 41 by welding or other means. For example, the mask 50 is first photographed with a camera or the like while overlapping the frame 41. At this time, tension can be applied to the mask 50. Next, based on the photographed image, the position of the mask 50 relative to the frame 41 is detected. The position of the mask 50 relative to the frame 41 is then adjusted so that the position of the mask 50 relative to the frame 41 is within a predetermined range.

[0293] like Figure 15 As shown, a clamp can be used to apply tension to the mask 50. The clamp includes, for example, a first clamp 81 and a second clamp 82 attached to the first end 51a, and a third clamp 83 and a fourth clamp 84 attached to the second end 51b.

[0294] As described above, the dimension S1 of the first step portion 501a of the first side edge 501 of the mask 50 in the second direction D2 is 1 mm or less. Therefore, the tension applied to the first end portion 51a can be appropriately transmitted to the middle portion 52. Therefore, by adjusting the positions of the clamps 81, 82, 83, and 84, the position of the middle portion 52 can be appropriately adjusted.

[0295] Dimension S1 can be measured with tension applied to the mask 50. For example, the positions of the jigs 81, 82, 83, and 84 can be adjusted so that the first step 501a and the second step 502a are aligned in the second direction D2, and dimension S1 can be measured in this state. Dimension S2, distance G1, distance G2, and the like can also be measured with tension applied to the mask 50.

[0296] Various changes can be made to the above-mentioned embodiment. Below, other embodiments will be described with reference to the accompanying drawings as needed. In the following description and the accompanying drawings used in the following description, for parts that can be constructed in the same manner as the above-mentioned embodiment, the same reference numerals as those used for the corresponding parts in the above-mentioned embodiment are used. Repeated descriptions are omitted. In addition, if it is clear that the effects obtained in the above-mentioned embodiment can also be obtained in other embodiments, their description may be omitted.

[0297] The second embodiment is described. In the above embodiment, the first end portion forming step includes a resist layer forming process, a second exposure process, a development process, an etching process, and a resist removal process. In the second embodiment, the first end portion forming step includes a laser process.

[0298] As in the first embodiment, the method for manufacturing the mask 50 includes a middle portion forming step, a first end portion forming step, and a second end portion forming step. As in the first embodiment, the middle portion forming step includes a resist layer forming process, a first exposure process, a development process, an etching process, and a resist removal process. Figure 16A and Figure 16B As shown, the through hole 56, the first outer edge hole 591 indicating the outer edge of the middle portion 52, and the middle mark 58a are formed in the original base material 55A.

[0299] Next, the first end forming step is performed. Figure 17A and Figure 17B As shown, the first end portion forming step includes a laser process for processing the original base material 55A using a laser 66. Thus, a second outer edge hole 592 defining the outer edge of the first end portion 51a and a mark 58c are formed.

[0300] In addition, the second end forming step is performed. Figure 17A and Figure 17B As shown, the second end portion forming step includes a laser process for processing the original base material 55A using a laser 66. Thus, a third outer edge hole 593 and a mark 58c that define the outer edge of the second end portion 51b are formed.

[0301] In this embodiment, the dimension M12 of the intermediate portion 52 can also be increased compared to the case where a single exposure mask is used to form the entire mask 50. Therefore, the dimension M11 of the mask 50 can be increased while using readily available exposure masks. In other words, the dimension M11 of the mask 50 can be increased while reducing the investment in manufacturing equipment for the mask 50.

[0302] The laser process can irradiate the original substrate 55A with a laser using a laser mask. In this case, the relative position of the laser mask to the first exposure mask may deviate from the ideal position. Consequently, the position of the second outer edge hole 592 defining the first side edge 501 of the first end portion 51a may deviate in the second direction D2 relative to the position of the first outer edge hole 591 defining the first side edge 501 of the middle portion 52. As a result, the aforementioned first step 501a is generated on the first side edge 501.

[0303] In this embodiment, the first end portion 51a also has a first mark 58c. By detecting the position of the first mark 58c, the degree of deviation of the laser mask relative to the first exposure mask can be verified. For example, the degree of deviation can be verified based on the distance G1 between the first mark 58c and the first straight line L1 described above.

[0304] Laser processes can utilize gas lasers, solid-state lasers, or semiconductor lasers. Solid-state lasers have the advantage of oscillating with short periods, such as femtoseconds, and of increasing peak output. Solid-state lasers use crystals as their laser medium. Examples of crystals include Yb:YAG, Yb:KGW, and Yb:KYW. Laser processes can adjust the laser irradiation position using methods other than laser masks.

[0305] In this embodiment, an example in which an outer step portion is intentionally formed on the first side edge 501 at the boundary between the intermediate portion 52 and the first end portion 51 a will be described.

[0306] Figure 18 It is a top view showing an example of the mask 50 . Figure 19 It will Figure 18 FIG. 1 is an enlarged plan view of the first end portion 51 a of the mask 50 .

[0307] The first step portion 501a has a dimension S1 in the second direction D2. Dimension S1 is greater than 10 μm. Dimension S1 can be, for example, greater than 10 μm, greater than 20 μm, greater than 50 μm, greater than 100 μm, greater than 500 μm, or greater than 1 mm. Dimension S1 can be, for example, less than 20 μm, less than 100 μm, less than 200 μm, less than 500 μm, less than 1 mm, or less than 2 mm. The range of dimension S1 can be defined by a first group consisting of 10 μm, 20 μm, 50 μm, 100 μm, 500 μm, and 1 mm and / or a second group consisting of 20 μm, 100 μm, 200 μm, 500 μm, 1 mm, and 2 mm. The range of dimension S1 can be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of size S1 can be limited by a combination of any two values included in the above-mentioned first group. The range of size S1 can be limited by a combination of any two values included in the above-mentioned second group. For example, size S1 can be greater than 10 μm and less than 2 mm, greater than 10 μm and less than 1 mm, greater than 10 μm and less than 500 μm, greater than 10 μm and less than 200 μm, greater than 10 μm and less than 100 μm, greater than 10 μm and less than 50 μm, greater than 10 μm and less than 20 μm, greater than 20 μm and less than 2 mm, greater than 20 μm and less than 1 mm, greater than 20 μm and less than 500 μm, greater than 20 μm and less than 200 μm, greater than 20 μm and less than 100 μm, greater than 20 μm and less than 50 μm, or greater than 50 μm and less than 2 mm. , can be greater than 50μm and less than 1mm, can be greater than 50μm and 500μm, can be greater than 50μm and less than 200μm, can be greater than 50μm and less than 100μm, can be greater than 100μm and 2mm, can be greater than 100μm and 1mm, can be greater than 100μm and 500μm, can be greater than 100μm and 200μm, can be greater than 200μm and 2mm, can be greater than 200μm and 1mm, can be greater than 200μm and 500μm, can be greater than 500μm and 2mm, can be greater than 500μm and 1mm, and can be greater than 1mm and 2mm.

[0308] In this embodiment, the first end portion 51a is designed so that the first side edge 501 of the first end portion 51a is positioned at least 10 μm outside the first side edge 501 of the middle portion 52 in the second direction D2. For example, the region of the second exposure mask corresponding to the second outer edge hole is designed in this manner. Therefore, even if the relative position of the second exposure mask with respect to the first exposure mask deviates from the ideal position in the second direction D2, the first side edge 501 of the first end portion 51a can be positioned outside the first side edge 501 of the middle portion 52 in the second direction D2. Consequently, the first step 501a located at the boundary between the middle portion 52 and the first end portion 51a becomes an outer step. Consequently, compared to a case where the first step 501a is an inner step, the tension applied to the first end portion 51a by the clamps 81 and 82 can be appropriately transmitted to the middle portion 52. For example, the direction of the tension transmitted to the middle portion 52 can be prevented from deviating from the first direction D1. This can improve the positional accuracy of the through-holes 56 of the mask 50 in the state of being fixed to the frame 41 .

[0309] like Figure 18 and Figure 19 As shown, an outer step can be intentionally formed at the second side edge 502 at the boundary between the middle portion 52 and the first end portion 51a. This allows dimension S2 to be set to 10 μm or greater, similar to dimension S1. The numerical range for dimension S2 can be the same as that for dimension S1.

[0310] like Figure 18 and Figure 19 As shown, a first step portion 501a as an outer step portion may be intentionally formed on the first side edge 501 at the boundary between the middle portion 52 and the second end portion 51b. A second step portion 502a as an outer step portion may also be intentionally formed on the second side edge 502 at the boundary between the middle portion 52 and the second end portion 51b.

[0311] In this embodiment, a fourth embodiment is described, taking as an example the case where the direction in which the first side edge 501 of the first end portion 51 a extends deviates from the direction in which the first side edge 501 of the intermediate portion 52 extends.

[0312] Figure 20 It is a top view showing an example of the mask 50 . Figure 21A It will Figure 20 FIG. 1 is an enlarged plan view showing the first end portion 51 a of the mask 50 .

[0313] like Figure 21AAs shown, the direction in which the first side edge 501 of the first end portion 51a extends forms a first angle θ1 with respect to the direction in which the first side edge 501 of the middle portion 52 extends. In other words, the first end portion 51a and the middle portion 52 are separated by the position where the direction in which the first side edge 501 extends changes. In the following description, the first side edge 501 of the first end portion 51a that forms the first angle θ1 with respect to the direction in which the first side edge 501 of the middle portion 52 extends is also referred to as a first inclined side edge and is indicated by reference numeral 501b.

[0314] exist Figure 20 and Figure 21A In the example shown, the first inclined side edge 501b is displaced outward in the second direction D2 when it is directed outward in the first direction D1. In the following description, the "inclined side edge that is displaced outward in the second direction D2 when it is directed outward in the first direction D1" is also referred to as the outer inclined side edge.

[0315] Like the first step 501a, the first inclined side edge 501b is formed because the intermediate portion 52 is formed differently from the first end portion 51a. For example, if the relative orientation of the second exposure mask relative to the first exposure mask deviates from the ideal orientation, the first inclined side edge 501b is generated by the amount of the deviation. Although not shown, the first end portion 51a may include both the first step 501a and the first inclined side edge 501b.

[0316] The first angle θ1 may be, for example, greater than 0.0007°, greater than 0.002°, greater than 0.05°, or greater than 0.1°. The first angle θ1 may be, for example, less than 0.2°, less than 0.5°, less than 1.0°, or less than 1.6°. The range of the first angle θ1 may be defined by the first group consisting of 0.0007°, 0.002°, 0.05°, and 0.1° and / or the second group consisting of 0.2°, 0.5°, 1.0°, and 1.6°. The range of the first angle θ1 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the first angle θ1 may be defined by a combination of any two of the values included in the first group. The range of the first angle θ1 may be defined by a combination of any two of the values included in the second group. For example, the first angle θ1 may be 0.0007° to 1.6°, 0.0007° to 1.0°, 0.0007° to 0.5°, 0.0007° to 0.2°, 0.0007° to 0.1°, 0.0007° to 0.05°, 0.0007° to 0.002°, 0.002° to 1.6°, 0.002° to 1.0°, 0.002° to 0.5°, 0.002° to 0.2°, 0.002° to 0.1°, 0.002° to 0.05°, ° or less, can be 0.05° or more and 1.6° or less, can be 0.05° or more and 1.0° or less, can be 0.05° or more and 0.5° or less, can be 0.05° or more and 0.2° or less, can be 0.05° or more and 0.1° or less, can be 0.1° or more and 1.6° or less, can be 0.1° or more and 1.0° or less, can be 0.1° or more and 0.5° or less, can be 0.1° or more and 0.2° or less, can be 0.2° or more and 1.6° or less, can be 0.5° or more and 1.0° or more and 1.6° or less.

[0317] The direction in which the first side edge 501 extends is calculated by capturing a planar image of the mask 50 and analyzing the coordinates of points on the first side edge 501 based on the image. A measuring instrument for calculating the direction in which the first side edge 501 extends can be AMIC-2500 manufactured by SINTO S-PRECISION.

[0318] like Figure 21AAs shown, the direction in which the second side edge 502 of the first end portion 51a extends may form a second angle θ2 with respect to the direction in which the second side edge 502 of the middle portion 52 extends. In the following description, the second side edge 502 of the first end portion 51a that forms the second angle θ2 with respect to the direction in which the second side edge 502 of the middle portion 52 extends is also referred to as a second inclined side edge and is denoted by reference numeral 502b.

[0319] exist Figure 20 and Figure 21A In the example shown, the second inclined side edge 502b is displaced inward in the second direction D2 when it is directed outward in the first direction D1. In the following description, the "inclined side edge that is displaced inward in the second direction D2 when it is directed outward in the first direction D1" is also referred to as the inner inclined side edge.

[0320] Like the first inclined side edge 501b, the second inclined side edge 502b is also formed due to the difference between the formation steps of the intermediate portion 52 and the formation steps of the first end portion 51a. For example, if the relative orientation of the second exposure mask relative to the first exposure mask deviates from the ideal orientation, the second inclined side edge 502b is generated according to the amount of deviation. Although not shown, the first end portion 51a may include both the second step portion 502a and the second inclined side edge 502b.

[0321] As the numerical range of the second angle θ2, the numerical range of the first angle θ1 described above can be adopted.

[0322] like Figure 20 As shown in FIG. 5 , the first side edge 501 of the second end portion 51b may also include a first inclined side edge 501b. Figure 20 In the example shown, the first inclined side edge 501b of the second end portion 51b is an outer inclined side edge. Although not shown, the second end portion 51b may include both the first step portion 501a and the first inclined side edge 501b.

[0323] like Figure 20 As shown, the second side edge 502 of the second end portion 51b may also include a second inclined side edge 502b. Figure 20 In the example shown, the second inclined side edge 502b of the second end portion 51b is an inner inclined side edge. Although not shown, the second end portion 51b may include both the second step portion 502a and the second inclined side edge 502b.

[0324] Figure 21B FIG. 5 is a top view showing a first end portion 51a of a modified example of the fourth embodiment. Figure 21B As shown, the first end portion 51a may include two or more first marks 58c. Figure 21BThe fifth straight line L5 is an approximate straight line of two or more first marks 58c. The first marks 58c can be arranged so that the direction in which the fifth straight line L5 extends is parallel to the direction in which the first inclined side edge 501b extends. In this case, the fifth angle θ5 between the fifth straight line L5 and the first straight line L1 corresponds to the first angle θ1 described above. The numerical range of the fifth angle θ5 can be the same as the numerical range of the first angle θ1 described above.

[0325] like Figure 21B As shown, the first end portion 51a may include two or more second marks 58d. Figure 21B The sixth straight line L6 is an approximate straight line of two or more second markings 58d. The second markings 58d can be arranged so that the direction in which the sixth straight line L6 extends is parallel to the direction in which the second inclined side edge 502b extends. In this case, the sixth angle θ6 between the sixth straight line L6 and the second straight line L2 corresponds to the second angle θ2 described above. The range of values for the sixth angle θ6 can be the same as the range of values for the first angle θ1 described above.

[0326] Figure 22 FIG. 5 is a top view showing a first end portion 51a of a modified example of the fourth embodiment. Figure 22 As shown, both the first inclined side edge 501b and the second inclined side edge 502b of the first end portion 51a may be outer inclined side edges.

[0327] The fifth embodiment will be described. In the above embodiments, examples have been shown in which the middle portion 52 and the first end portion 51a are distinguished by the shape of a step portion, an inclined side edge, etc. In the fifth embodiment, the middle portion 52 and the first end portion 51a are distinguished by the size of the middle portion 52.

[0328] In this embodiment, the middle portion 52 has a center C2 that coincides with the center C1 of the mask 50 in the first direction D1. The dimension M12 of the middle portion 52 in the first direction D1 is 1250 mm. In other words, in this embodiment, the portion of the mask 50 that has a center C2 that coincides with the center C1 and has a length of 1250 mm in the first direction D1 is defined as the middle portion 52. Furthermore, the portions of the mask 50 that are located outside the middle portion 52 in the first direction D1 are defined as the first end portion 51 a and the second end portion 51 b.

[0329] The length of the first side edge 501 determined based on the first exposure mask may be shorter than 1250 mm. Figure 23 As shown, the first side edge 501 of the middle portion 52 may include a first step portion 501a. The length of the first side edge 501 determined based on the first exposure mask may be longer than 1250 mm. In this case, although not shown, the first side edge 501 of the first end portion 51a may include the first step portion 501a.

[0330] like Figure 23 As shown in FIG, the first end portion 51a may include a first mark 58c. Similar to the above embodiment, the first mark 58c can function as an indicator of processing accuracy in the first end portion forming step.

[0331] like Figure 23 As shown, the second side edge 502 of the middle portion 52 may include a second step portion 502a. Although not shown, the second side edge 502 of the first end portion 51a may include a second step portion 502a. The first end portion 51a may include a second mark 58d.

[0332] The sixth embodiment will be described. In the first embodiment described above, an example was shown in which the third exposure process for forming the second end portion was performed using an exposure mask different from that used in the first exposure process for the intermediate portion 52. In the sixth embodiment, an example will be described in which the exposure process for forming the second end portion was performed using the same exposure mask used in the first exposure process for the intermediate portion 52.

[0333] The resist layer forming process is performed in the same manner as in the first embodiment. Next, the first exposure process is performed. In the first exposure process, the resist layer on the original substrate 55A is exposed using the first exposure mask. Figure 24 As shown, the first exposure mask exposes the resist layer located in a region corresponding to the middle portion 52 and the resist layer located in a region corresponding to the second end portion 51 b . Figure 25 It is a plan view showing an example of a resist layer exposed through a first exposure mask.

[0334] Next, the second exposure process is performed. The second exposure process uses a second exposure mask to expose the resist layer on the original substrate 55A. Figure 25 As shown, the second exposure mask exposes the resist layer located in a region corresponding to the first end portion 51 a . Figure 26 It is a plan view showing an example of a resist layer exposed through a second exposure mask.

[0335] Next, the development process, etching process, and resist layer removal process are performed in the same manner as in the first embodiment. Figure 27is a top view showing an example of a manufactured mask 50. The first side edge 501 of the mask 50 may include a first step portion 501a located at the boundary between the middle portion 52 and the first end portion 51a. The second side edge 502 of the mask 50 may include a second step portion 502a located at the boundary between the middle portion 52 and the first end portion 51a. On the other hand, the boundary between the middle portion 52 and the second end portion 51b may not have a first step portion or a second step portion. In this case, the boundary between the middle portion 52 and the second end portion 51b may be defined at a position symmetrical to the first step portion 501a relative to the center C1 of the mask 50 in the first direction D1. That is, the boundary between the middle portion 52 and the second end portion 51b may be defined at a position at a distance M13 from the second end 504 in the first direction D1. M13 represents the dimension of the first end portion 51a in the first direction D1.

[0336] In this embodiment, the resist layer at first end portion 51a is also exposed using a second exposure mask, which is different from the first exposure mask. Therefore, compared to the case where a single exposure mask is used to form the entire mask 50, dimension M12 of intermediate portion 52 can be increased. Consequently, dimension M11 of mask 50 can be increased while using readily available exposure masks. In other words, dimension M11 of mask 50 can be increased while reducing investment in manufacturing equipment for mask 50.

[0337] The seventh embodiment will be described. In the above embodiment, the first step portion 501a is located at the boundary between the middle portion 52 and the second end portion 51b. In the seventh embodiment, the first step portion 501a is located at the first side edge 501 of the middle portion 52.

[0338] Figure 28A is a top view illustrating an example of a mask 50. The first side edge 501 of the mask 50 may include a first step portion 501a located in the middle portion 52. The second side edge 502 of the mask 50 may include a second step portion 502a located in the middle portion 52. The first step portion 501a and the second step portion 502a are preferably positioned in the first direction D1 between two adjacent through-hole groups 53 in the first direction D1. In other words, when the mask 50 is viewed along the second direction D2, the first step portion 501a and the second step portion 502a preferably do not overlap with the through-hole groups 53.

[0339] like Figure 28A As shown in FIG. 5 , the first step portion and the second step portion may not be formed at the boundary between the middle portion 52 and the first end portion 51a. Figure 28A As shown, the first step portion and the second step portion may not be formed at the boundary between the middle portion 52 and the second end portion 51 b.

[0340] The region of the intermediate portion 52 located between the first end portion 51a and the first step portion 501a in the first direction D1 is also referred to as the first intermediate portion 52a. The region of the intermediate portion 52 located between the second end portion 51b and the first step portion 501a in the first direction D1 is also referred to as the second intermediate portion 52b. Both the first intermediate portion 52a and the second intermediate portion 52b include at least one through-hole group 53. Each of the first intermediate portion 52a and the second intermediate portion 52b may include at least two through-hole groups 53.

[0341] The region of the mask 50 located between the first end 503 and the first step 501a in the first direction D1 is also referred to as a first portion 50A. The region of the mask 50 located between the second end 504 and the first step 501a in the first direction D1 is also referred to as a second portion 50B.

[0342] The mask 50 of the seventh embodiment can be expressed as follows.

[0343] A mask comprising:

[0344] a substrate comprising a first side edge and a second side edge extending in a first direction and comprising a first surface and a second surface; and

[0345] A through hole group, penetrating the substrate,

[0346] When viewed from above, the mask includes: a first end portion and a second end portion facing each other in the first direction; and a middle portion located between the first end portion and the second end portion and including the through hole group.

[0347] The first side edge includes a first step portion located in the middle portion and displaced in a second direction perpendicular to the first direction.

[0348] A dimension of the first step portion in the second direction is 3.0 μm or less.

[0349] In this embodiment, the boundary between the middle portion 52 and the first end portion 51a is determined based on the through hole group 53 closest to the first end 503. Figure 28A As shown, the boundary line BL1 indicating the boundary extends along the second direction D2 so as to contact the plurality of through holes 56 closest to the first end 503. Similarly, the boundary between the middle portion 52 and the second end portion 51b is determined based on the through hole group 53 closest to the second end 504. Figure 28A As shown, the boundary line BL2 indicating the boundary extends along the second direction D2 so as to contact the plurality of through holes 56 closest to the second end 504 .

[0350] Figure 28B It will Figure 28AFIG2 is an enlarged top view of the middle portion 52 of the mask 50. The dimension of the first step portion 501a in the second direction D2 can be equivalent to the distance G3 between the fifth reference point P5 and the seventh straight line L7. The seventh straight line L7 is defined as a line passing through the seventh reference point P7 and the ninth reference point P9. The fifth reference point P5 is the first middle mark 58a of the first middle portion 52a closest to the first step portion 501a. The seventh reference point P7 is the first middle mark 58a of the second middle portion 52b closest to the first step portion 501a. The ninth reference point P9 is the first mark 58c of the second end portion 51b.

[0351] The size of the first step portion 501a in the second direction D2 can be, for example, 0.1 μm or more, 0.2 μm or more, 0.5 μm or more, or 1.0 μm or more. The size of the first step portion 501a can be, for example, 1.5 μm or less, 2.0 μm or less, 2.5 μm or less, or 3.0 μm or less. The size range of the first step portion 501a can be defined by a first group consisting of 0.1 μm, 0.2 μm, 0.5 μm, and 1.0 μm and / or a second group consisting of 1.5 μm, 2.0 μm, 2.5 μm, and 3.0 μm. The size range of the first step portion 501a can be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The size range of the first step portion 501a can be defined by a combination of any two of the values included in the first group. The size range of the first step portion 501a can be defined by a combination of any two values included in the above-mentioned second group. The size of the first step portion 501a can be, for example, 0.1 μm to 3.0 μm, 0.1 μm to 2.5 μm, 0.1 μm to 2.0 μm, 0.1 μm to 1.5 μm, 0.1 μm to 1.0 μm, 0.1 μm to 0.5 μm, 0.1 μm to 0.2 μm, 0.2 μm to 3.0 μm, 0.2 μm to 2.5 μm, 0.2 μm to 2.0 μm, 0.2 μm to 1.5 μm, 0.2 μm to 1.0 μm, 0.2 μm to 0.5 μm, or 0.5 μm to 3. .0μm or less, can be 0.5μm or more and 2.5μm or less, can be 0.5μm or more and 2.0μm or less, can be 0.5μm or more and 1.5μm or less, can be 0.5μm or more and 1.0μm or less, can be 1.0μm or more and 3.0μm or less, can be 1.0μm or more and 2.5μm or less, can be 1.0μm or more and 2.0μm or less, can be 1.0μm or more and 1.5μm or more, can be 1.5μm or more and 3.0μm or less, can be 1.5μm or more and 2.5μm or more, can be 1.5μm or more and 2.0μm or less, can be 2.0μm or more and 3.0μm or less, can be 2.0μm or more and 2.5μm or more, and can be 2.5μm or more and 3.0μm or less.

[0352] The numerical range of the size of the first step portion 501 a can also be used as the numerical range of the distance G3 .

[0353] The dimension of the second step 502a in the second direction D2 can be equivalent to the distance G4 between the sixth reference point P6 and the eighth straight line L8. The eighth straight line L8 is defined as a straight line passing through the eighth reference point P8 and the tenth reference point P10. The sixth reference point P6 is the second intermediate mark 58b of the first intermediate portion 52a closest to the second step 502a. The eighth reference point P8 is the second intermediate mark 58b of the second intermediate portion 52b closest to the second step 502a. The tenth reference point P10 is the second mark 58d of the second end portion 51b.

[0354] The numerical range of the second step portion 502a in the second direction D2 can be the same as the numerical range of the first step portion 501a. The numerical range of the distance G4 can also be the same as the numerical range of the first step portion 501a.

[0355] The center C1 of the mask 50 can be determined as the intersection of a third center line extending along the first direction D1 and a ninth line L9. The third center line is located midway between the seventh line L7 and the eighth line L8. The ninth line L9 passes through the seventh reference point P7 and the eighth reference point P8.

[0356] The first portion 50A has a dimension M15 in the first direction D1. The second portion 50B has a dimension M16 in the first direction D1.

[0357] The dimension M15 of the first portion 50A can be greater than 900 mm, greater than 1100 mm, greater than 1200 mm, or greater than 2000 mm. For example, the dimension M15 can be less than 1100 mm, less than 1200 mm, less than 1800 mm, less than 2000 mm, or less than 2200 mm. The range of the dimension M15 can be defined by a first group consisting of 900 mm, 1100 mm, 1200 mm, and 2000 mm and / or a second group consisting of 1100 mm, 1200 mm, 1800 mm, 2000 mm, and 2200 mm. The range of the dimension M15 can be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the dimension M15 can be defined by a combination of any two of the values included in the first group. The range of the dimension M15 can be defined by a combination of any two values included in the above-mentioned second group. For example, the dimension M15 can be 900 mm or more and 2200 mm or less, 900 mm or more and 2000 mm or less, 900 mm or more and 1800 mm or less, 900 mm or more and 1200 mm or less, 900 mm or more and 1100 mm or less, 1100 mm or more and 2200 mm or less, 1100 mm or more and 2000 mm or less, 1100 mm or more and 1800 mm or less, 1100 mm or more and 1200 mm or less, 1200 mm or more and 2200 mm or less, 1200 mm or more and 2000 mm or less, 1200 mm or more and 1800 mm or less, 1800 mm or more and 2200 mm or less, 1800 mm or more and 2000 mm or more, or 2000 mm or more and 2200 mm or less.

[0358] The ratio M16 / M15 of the dimension M16 of the second portion 50B to the dimension M15 of the first portion 50A can be, for example, greater than 0.5, greater than 0.7, or greater than 0.9. M16 / M15 can be, for example, less than 1.1, less than 1.3, or less than 1.5. The range of M16 / M15 can be defined by the first group consisting of 0.5, 0.7, and 0.9 and / or the second group consisting of 1.1, 1.3, and 1.5. The range of M16 / M15 can be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of M16 / M15 can be defined by a combination of any two of the values included in the first group. The range of M16 / M15 can be defined by a combination of any two of the values included in the second group. For example, M16 / M15 can be greater than 0.5 and less than 1.5, greater than 0.5 and less than 1.3, greater than 0.5 and less than 1.1, greater than 0.5 and less than 0.9, greater than 0.5 and less than 0.7, greater than 0.7 and less than 1.5, greater than 0.7 and less than 1.3, greater than 0.7 and less than 1.1, greater than 0.7 and less than 0.9, greater than 0.9 and less than 1.5, greater than 0.9 and less than 1.3, greater than 0.9 and less than 1.1, greater than 1.1 and less than 1.5, greater than 1.1 and less than 1.3, or greater than 1.3 and less than 1.5.

[0359] The first end portion 51a may include a first mark 58c and a second mark 58d. The second end portion 51b may include a first mark 58c and a second mark 58d. The first intermediate portion 52a may include a first intermediate mark 58a and a second intermediate mark 58b. The second intermediate portion 52b may include a first intermediate mark 58a and a second intermediate mark 58b.

[0360] The thickness T of the mask 50 in the seventh embodiment can be 25 μm or greater. This improves the rigidity of the mask 50. Consequently, when tension is applied to the mask 50 in the first direction D1, significant local deformation of the mask 50 around the first step 501 a or the second step 502 a can be suppressed. This also prevents the positions of the through-holes 56 in the through-hole group 53 near the first step 501 a or the second step 502 a from deviating from their ideal positions.

[0361] The thickness T of the mask 50 of the seventh embodiment can be, for example, 25 μm or more, 30 μm or more, or 35 μm or more. The thickness T can be, for example, 50 μm or less, 80 μm or less, or 100 μm or less. The range of the thickness T can be limited by the first group consisting of 25 μm, 30 μm, and 35 μm and / or the second group consisting of 50 μm, 80 μm, and 100 μm. The range of the thickness T can be limited by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the thickness T can be limited by a combination of any two of the values included in the first group. The range of the thickness T can be limited by a combination of any two of the values included in the second group. The thickness T can be, for example, greater than 25 μm and less than 100 μm, greater than 25 μm and less than 80 μm, greater than 25 μm and less than 50 μm, greater than 25 μm and less than 35 μm, greater than 25 μm and less than 30 μm, greater than 30 μm and less than 100 μm, greater than 30 μm and less than 80 μm, greater than 30 μm and less than 50 μm, greater than 30 μm and less than 35 μm, greater than 35 μm and less than 100 μm, greater than 35 μm and less than 80 μm, greater than 35 μm and less than 50 μm, greater than 50 μm and less than 100 μm, greater than 50 μm and less than 80 μm, or greater than 80 μm and less than 100 μm.

[0362] right Figure 28A A method for manufacturing the mask 50 shown will be described.

[0363] The resist layer forming process is performed in the same manner as in the first embodiment. Then, the first exposure process is performed. Figure 28C As shown, the first exposure process uses a first exposure mask to expose the resist layer on the original substrate 55A. The first exposure mask can include a first-side first exposure mask for exposing the first resist layer and a second-side first exposure mask 712 for exposing the second resist layer 62. The first exposure mask exposes the resist layer located in the area corresponding to the first portion 50A. Specifically, the first exposure mask exposes the resist layer located in the area corresponding to the first intermediate portion 52a and the resist layer located in the area corresponding to the first end portion 51a.

[0364] Figure 28D This is a top view showing an example of the second resist layer 62 exposed through the second-side first exposure mask 712. The exposed second resist layer 62 includes a second developed layer 62a and a second residual layer 62b. Although not shown, the exposed first resist layer includes a first developed layer and a second residual layer.

[0365] Next, the second exposure process is performed. The second exposure process uses a second exposure mask to expose the resist layer on the original substrate 55A. Figure 28E As shown, the second exposure process uses a second exposure mask to expose the resist layer on the original substrate 55A. The second exposure mask can include a first-side second exposure mask for exposing the first resist layer, and a second-side second exposure mask 722 for exposing the second resist layer 62. The second exposure mask exposes the resist layer located in the area corresponding to the second portion 50B. Specifically, the second exposure mask exposes the resist layer located in the area corresponding to the second middle portion 52b and the resist layer located in the area corresponding to the second end portion 51b.

[0366] In the second exposure process, the position of the second exposure mask can be adjusted based on the position and contour of the second developed layer 62 a or the second residual layer 62 b generated in the first exposure process.

[0367] Next, the development process, etching process and resist layer removal process are performed in the same manner as in the first embodiment. Figure 28A Mask 50 is shown.

[0368] The manufacturing method of the mask 50 may include a screening step: screening the mask 50 based on the size of the first step portion 501a in the second direction D2. The screening step, for example, screens out the mask 50 whose size of the first step portion 501a is below a threshold value as a qualified product. The threshold value is, for example, 3.0 μm, 2.5 μm, 2.0 μm, 1.5 μm, or 1.0 μm. The screening step may also screen out the mask 50 whose distance G3 is below the above threshold value as a qualified product. The screening step may also screen out the mask 50 whose distance in the first direction D1 between the center point QC1 and the center point QC2 described later is below the above threshold value as a qualified product. The screening step may also screen out the mask 50 whose distance in the second direction D2 between the center point QC1 and the center point QC2 described later is below the above threshold value as a qualified product.

[0369] The screening step may select masks 50 having a first angle θ1 described later that is equal to or smaller than a threshold value as qualified products. The threshold value may be 0.0240°, 0.0100°, 0.0050°, or 0.0020°.

[0370] In this embodiment, the size of the intermediate portion 52 can also be increased compared to the case where a single exposure mask is used to form the entire mask 50. Therefore, the size M11 of the mask 50 can be increased while using a readily available exposure mask. In other words, the size M11 of the mask 50 can be increased while reducing the investment in manufacturing equipment for the mask 50.

[0371] The degree of deviation of the relative position of the second exposure mask with respect to the first exposure mask can be verified by detecting the position of the first mark 58c at the first end portion 51a and the position of the first mark 58c at the second end portion 51b. The degree of deviation of the relative position of the second exposure mask with respect to the first exposure mask can also be verified by detecting the position of the first intermediate mark 58a at the first intermediate portion 52a and the position of the first intermediate mark 58a at the second intermediate portion 52b.

[0372] In the mask 50 of the seventh embodiment, the direction in which the first side edge 501 of the first portion 50A extends may form a first angle θ1 with respect to the direction in which the first side edge 501 of the second portion 50B extends.

[0373] In this case, the mask 50 of the seventh embodiment can be expressed as follows.

[0374] A mask comprising:

[0375] a substrate comprising a first side edge and a second side edge extending in a first direction and comprising a first surface and a second surface; and

[0376] A through hole group, penetrating the substrate,

[0377] When viewed from above, the mask includes: a first end portion and a second end portion facing each other in the first direction; and a middle portion located between the first end portion and the second end portion and including the through hole group.

[0378] The intermediate portion includes a first intermediate portion adjacent to the first end portion and a second intermediate portion adjacent to the second end portion.

[0379] The direction in which the first side edge of the first intermediate portion extends is deviated from the direction in which the first side edge of the second intermediate portion extends.

[0380] In the mask 50 of the seventh embodiment, the first angle θ1 can be, for example, 0.00005° or greater, 0.0001° or greater, 0.0003° or greater, or 0.0010° or greater. The first angle θ1 can be, for example, 0.0020° or less, 0.0050° or less, 0.0100° or less, or 0.0240° or less. The range of the first angle θ1 can be defined by a first group consisting of 0.00005°, 0.0001°, 0.0003°, and 0.0010° and / or a second group consisting of 0.0020°, 0.0050°, 0.0100°, and 0.0240°. The range of the first angle θ1 can be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the first angle θ1 can be limited by a combination of any two values from the values included in the first group. The range of the first angle θ1 can be limited by a combination of any two values from the values included in the second group. For example, the first angle θ1 can be 0.00005° to 0.0240°, 0.00005° to 0.0100°, 0.00005° to 0.0050°, 0.00005° to 0.0020°, 0.00005° to 0.0010°, 0.00005° to 0.0003°, or 0.00005°. 0.0001° or more and less than 0.0001°, 0.0001° or more and less than 0.0240°, 0.0001° or more and less than 0.0100°, 0.0001° or more and less than 0.0050°, 0.0001° or more and less than 0.0020°, 0.0001° or more and less than 0.0010°, 0.0001° or more and less than 0.0003°, 0.0003° or more and less than 0. 0.240° or less, can be 0.0003° or more and 0.0100° or less, can be 0.0003° or more and 0.0050° or less, can be 0.0003° or more and 0.0020° or less, can be 0.0003° or more and 0.0010° or less, can be 0.0010° or more and 0.0240° or less, can be 0.0010° or more and 0.0100° or less, can be 0.0010° or more and 0.0050° or less. ° or less, can be 0.0010° or more and 0.0020° or less, can be 0.0020° or more and 0.0240° or less, can be 0.0020° or more and 0.0100° or less, can be 0.0020° or more and 0.0050° or less, can be 0.0050° or more and 0.0240° or less, can be 0.0050° or more and 0.0100° or more, and can be 0.0100° or more and 0.0240° or less.

[0381] Figure 28F This is an enlarged top view of dual fiducial mark 58W located at the boundary between first intermediate portion 52a and second intermediate portion 52b. Dual fiducial mark 58W includes a first outline 58w1 and a second outline 58w2. First outline 58w1 includes a portion of the outline of a mark having a shape determined by the first exposure process. For example, first outline 58w1 includes a portion of the outline of a first intermediate mark determined by the first exposure process. Figure 28F In FIG, the first intermediate mark defined by the first exposure process is indicated by reference numeral 58a1. The second outline 58w2 includes the outline of a mark having a shape defined by the second exposure process. For example, the second outline 58w2 includes a portion of the outline of the second intermediate mark defined by the second exposure process. Figure 28F In the figure, the first intermediate mark determined by the second exposure process is represented by the label 58a2. Figure 28F , an example is shown in which the first intermediate marker 58a1 and the first intermediate marker 58a2 both have a circular shape.

[0382] The second exposure process is performed so that the mark having the shape determined by the second exposure process is aligned with the mark having the shape determined by the first exposure process, thereby forming a dual reference mark 58W. When the position of the second exposure mask relative to the first exposure mask deviates from the ideal position, the outline of the dual reference mark 58W includes the first outline 58w1 and the second outline 58w2 described above. The first outline 58w1 can be a first intermediate mark having a center angle QC1 relative to the center point QC1 of the label 58a1. The second contour 58w2 may be a first intermediate mark having a center angle relative to the center point QC2 of the label 58a2. The arc of the circle. and central angle The smaller the deviation between the position of the second exposure mask relative to the first exposure mask and the ideal position, the smaller the central angle and central angle The closer to 180°.

[0383] Center Angle For example, it can be 181° or more, 185° or more, or 190° or more. For example, it may be less than 200°, less than 220°, or less than 250°. The range of can be defined by the first group consisting of 181°, 185° and 190° and / or the second group consisting of 200°, 220° and 250°. The range of can be limited by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of can be limited by the combination of any two values included in the above-mentioned first group. The range of can be limited by the combination of any two values included in the above-mentioned second group. For example, it can be above 181° and below 250°, above 181° and below 220°, above 181° and below 200°, above 181° and below 190°, above 181° and below 185°, above 185° and below 250°, above 185° and below 220°, above 185° and above 200°, above 185° and below 190°, above 190° and below 250°, above 190° and below 220°, above 190° and above 200°, above 200° and below 250°, above 200° and below 220°, or above 220° and below 250°.

[0384] As the central angle The range of the central angle can be used as The range of values.

[0385] The smaller the deviation of the position of the second exposure mask relative to the first exposure mask from the ideal position, the smaller the distance between the center points QC1 and QC2 in the second direction D2. The range of values for the distance between the center points QC1 and QC2 in the second direction D2 can be the same as the range of values for the size of the first step 501a described above.

[0386] The smaller the deviation of the position of the second exposure mask relative to the first exposure mask from the ideal position, the smaller the distance between the center points QC1 and QC2 in the first direction D1. The range of values for the distance between the center points QC1 and QC2 in the first direction D1 can be the same as the range of values for the dimensions of the first step 501a described above.

[0387] The position of dual reference mark 58W is not particularly limited. For example, dual reference mark 58W may be located between through-hole group 53 in first intermediate portion 52a closest to first step 501a and through-hole group 53 in second intermediate portion 52b closest to first step 501a. For example, dual reference mark 58W may be formed on mask 50 of the first to sixth embodiments.

[0388] Several other embodiments have been described with respect to the above-mentioned one embodiment. Of course, a plurality of embodiments may be used in appropriate combination.

[0389] Example

[0390] Next, the embodiments of the present invention will be described in more detail with reference to Examples. However, the embodiments of the present invention are not limited to the description of the following Examples unless the gist of the invention is exceeded.

[0391] (Basic example)

[0392] By implementing a manufacturing method including a middle portion forming step, a first end portion forming step and a second end portion forming step, a Figure 29 Mask 50 is shown.

[0393] The intermediate portion forming step includes a resist layer forming process, a first exposure process, a development process, an etching process, and a resist removing process.

[0394] The first end portion forming step includes a resist layer forming process, a second exposure process, a development process, an etching process, and a resist removing process.

[0395] The second end portion forming step includes a resist layer forming process, a third exposure process, a development process, an etching process, and a resist removing process.

[0396] In the resist layer forming process, a resist layer is simultaneously formed in regions of the original base material corresponding to the intermediate portion 52 , the first end portion 51 a , and the second end portion 51 b .

[0397] The second and third exposure processes were performed at different times than the first exposure process. During each exposure process, the exposure mask was moved using a drive device equipped with a microactuator to align the exposure mask. Specifically, during the second and third exposure processes, the exposure mask was aligned so that the alignment marks on the exposure mask aligned with the alignment marks on the resist layer exposed in the first exposure process. The positions of the alignment marks on the resist layer and the alignment marks on the exposure mask were read using image processing with a resolution of 0.1 μm.

[0398] In the development process, the etching process, and the resist removal process, the resist layer located in the region of the original base material corresponding to the middle portion 52 , the first end portion 51 a , and the second end portion 51 b is processed simultaneously.

[0399] Figure 29 The design values of the dimensions of the mask shown are as follows.

[0400] Dimension M11 of the mask 50 in the first direction D1: 1650 mm

[0401] Dimension M12 of the middle portion 52 in the first direction D1: 1250 mm

[0402] Dimension M13 of the first end portion 51a in the first direction D1: 200 mm

[0403] Dimension M14 of the second end portion 51b in the first direction D1: 200 mm

[0404] Dimension M20 of the middle portion 52 in the second direction D2: 76 mm

[0405] Dimension of the first end portion 51a in the second direction D2: 76 mm

[0406] Dimension of the second end portion 51b in the second direction D2: 76 mm

[0407] like Figure 29 As shown, the middle portion 52 includes an intermediate mark. The first end 51a and the second end 51b include marks. The intermediate mark and the mark are through-holes that penetrate the substrate. Reference numeral M1 denotes the mark located at the first end 51a closest to the first step 501a. Reference numeral M2 denotes the mark located at the first end 51a closest to the second step 502a. Reference numeral M3 denotes the mark located at the second end 51b closest to the first step 501a. Reference numeral M4 denotes the mark located at the second end 51b closest to the second step 502a.

[0408] The first surface of the mask 50 was imaged using AMIC-2500 manufactured by SINTO S-PRECISION.

[0409] Figure 30A 1 and 2 show an image including the first step portion 501a of the first end portion 51a and an image including the mark M1. A distance G1 between the mark M1 and the first straight line L1 in the second direction D2 is 11.7 μm.

[0410] Figure 30B 1 and 2 show an image including the second step portion 502a of the first end portion 51a and an image including the mark M2. A distance G2 between the mark M2 and the second straight line L2 in the second direction D2 is 12.9 μm.

[0411] Figure 30C This figure shows an image of the first step 501a including the second end 51b and an image including the mark M3. Reference symbol S1' indicates the dimension of the first step 501a at the second end 51b in the second direction D2. Reference symbol G1' indicates the distance between the mark M3 and the first straight line L1 in the second direction D2. Distance G1' is 7.3 μm.

[0412] Figure 30DThis figure shows an image of the second step 502a including the second end 51b and an image including the mark M4. Reference symbol S2' indicates the dimension of the second step 502a at the second end 51b in the second direction D2. Reference symbol G2' indicates the distance between the mark M4 and the second straight line L2 in the second direction D2. Distance G2' is 6.6 μm.

[0413] (Example 1 to Example 49)

[0414] In Examples 1 to 49, similarly to the above-mentioned basic example, a manufacturing method comprising a middle portion forming step, a first end portion forming step, and a second end portion forming step was implemented to manufacture the Figure 29 The mask 50 shown in FIG. Next, the coordinates of the marks M1 to M4 relative to the center C1 were measured using AMIC-2500 manufactured by SINTO S-PRECISION. Next, the offset between the measured coordinates of the marks M1 to M4 and the ideal coordinates of the marks M1 to M4 was calculated in the first direction D1 and the second direction D2. The calculation results are shown in FIG. Figure 31 The unit of the value is mm. Figure 31 In the "D1 coordinates" column, a positive value means that the measured coordinates are in the positive direction relative to the ideal coordinates. Figure 29 The upper offset of . Figure 31 In the "D1 coordinates" column, negative values mean that the measured coordinates are in the opposite direction to the ideal coordinates. Figure 29 The bottom offset of . Figure 31 In the "D2 coordinates" column, a positive value means that the measured coordinates are in the positive direction relative to the ideal coordinates. Figure 29 Offset to the right of . Figure 31 In the "D2 coordinates" column, negative values mean that the measured coordinates are in the opposite direction to the ideal coordinates. Figure 29 Left offset.

[0415] In addition, the coordinates of the through-holes 56 relative to the center C1 are measured. The number of through-holes 56 measured is 15. Next, the maximum value of the distance between the coordinates of the measured through-holes 56 and the coordinates of the ideal through-holes 56 is calculated. The calculation results are shown in Figure 31 The "PPA" column is displayed. "PPA" stands for Pixel Position Accuracy. The unit of value is μm.

[0416] During the process of measuring the coordinates of the through-hole 56, tension is applied to the mask 50. The tension is adjusted so that the marks M1 and M3 are aligned in the first direction D1, and the marks M2 and M4 are aligned in the first direction D1. The process of measuring the coordinates of the through-hole 56 is carried out with the mask 50 fixed to the frame 41. The mask 50 is fixed to the frame 41 with tension applied so that the marks M1 and M3 are aligned in the first direction D1, and the marks M2 and M4 are aligned in the first direction D1. The measuring device for measuring the coordinates of the through-hole 56 includes a camera that captures the first surface 551 of the mask 50. Information on the coordinates of the through-hole 56 is obtained by analyzing the image captured by the camera. The measuring device can be provided in the device for fixing the mask 50 to the frame 41.

[0417] The step of measuring the coordinates of the marks M1 to M4 is performed without applying tension to the mask 50 .

[0418] (Reference Example 1)

[0419] A mask 50 was prepared as a reference for the masks 50 of Examples 1 to 49. In Reference Example 1, the resist layer located in the region of the original substrate corresponding to the middle portion 52, the first end portion 51a, and the second end portion 51b was exposed in a single exposure step.

[0420] The coordinates of the marks M1 to M4 of the mask 50 of Reference Example 1 were measured in the same manner as in Examples 1 to 49. Next, the offsets between the measured coordinates of the marks M1 to M4 and the ideal coordinates of the marks M1 to M4 were calculated in the first direction D1 and the second direction D2. The calculation results are shown in FIG. Figure 31 The "M1" column, the "M2" column, the "M3" column and the "M4" column are shown in the figure. Figure 31 As shown, in Reference Example 1, the offset is zero.

[0421] The coordinates of the through-holes 56 of the mask 50 of Reference Example 1 were measured in the same manner as in Examples 1 to 49. Next, the maximum value of the distance between the measured coordinates of the through-holes 56 and the coordinates of the ideal through-holes 56 was calculated. The calculation results are shown in FIG. Figure 31 The PPA is 2.4 μm.

[0422] (Reference Example 2)

[0423] A mask 50 was prepared as a reference for the masks 50 of Examples 1 to 49. In Reference Example 2, the resist layer located in the region of the original substrate corresponding to the intermediate portion 52 was exposed in a single exposure step. Regions corresponding to the first end portion 51a and the second end portion 51b were not provided.

[0424] Next, the coordinates of the through-holes 56 of the mask 50 of Reference Example 2 were measured while tension was applied to the mask 50 in the first direction D1. Next, the maximum value of the distance between the measured coordinates of the through-holes 56 and the coordinates of the ideal through-holes 56 was calculated. The calculation results are shown in FIG. Figure 31 The PPA column is 2.0 μm.

[0425] like Figure 31 As shown, when the number of poor marks is 2 or less and the number of defective marks is 2 or less, the PPA is 3.0 μm or less. The number of poor marks refers to the number of marks M1 to M4 whose absolute value of the offset of the coordinates in the second direction D2 is 1.5 mm or more. The number of defective marks refers to the number of marks M1 to M4 whose absolute value of the offset of the coordinates in the second direction D2 is 1.0 mm or more. On the other hand, when the number of poor marks is 2 or more and the number of defective marks is 3 or more, the PPA exceeds 3.0 μm.

[0426] like Figure 31 As shown, when the absolute values of the offsets of the coordinates of the markers M1 to M4 in the second direction D2 are all less than 1.0 mm, the PPA is less than 2.5 μm. On the other hand, when at least one of the absolute values of the offsets of the coordinates of the markers M1 to M4 in the second direction D2 exceeds 1.0 mm, the PPA exceeds 2.5 μm.

[0427] (Example 50~Example 56)

[0428] In Examples 50 to 56, a first portion 50A and a second portion 50B were manufactured in the same manner as in the seventh embodiment. Figure 28A Mask 50.

[0429] The first portion forming step of forming the first portion 50A includes a resist layer forming process, a first exposure process, a development process, an etching process, and a resist removing process.

[0430] The second portion forming step of forming the second portion 50B includes a resist layer forming process, a second exposure process, a development process, an etching process, and a resist removing process.

[0431] Figure 28A The design values of the dimensions of the mask shown are as follows.

[0432] Dimension M11 of the mask 50 in the first direction D1: 1650 mm

[0433] Dimension M15 of the first portion 50A in the first direction D1: 825 mm

[0434] Dimension M16 of the second portion 50B in the first direction D1: 825 mm

[0435] Dimension of the first end portion 51a in the first direction D1: 200 mm

[0436] Dimension of the second end portion 51b in the first direction D1: 200 mm

[0437] Dimension of the first portion 50A in the second direction D2: 76 mm

[0438] Dimension of the second portion 50B in the second direction D2: 76 mm

[0439] Using AMIC-2500 manufactured by SINTO S-PRECISION, the coordinates of the reference points P5 to P8 relative to the center C1 were measured. Next, the offset between the coordinates of the measured reference points P5 to P8 and the coordinates of the ideal reference points P5 to P8 was calculated in the first direction D1 and the second direction D2. The calculation results are shown in FIG. Figure 32 The unit of the values is μm. Figure 32 In the "D1 coordinates" column, a positive value means that the measured coordinates are in the positive direction relative to the ideal coordinates. Figure 28A The upper offset of . Figure 32 In the "D1 coordinates" column, negative values mean that the measured coordinates are in the opposite direction to the ideal coordinates. Figure 28A The bottom offset of . Figure 32 In the "D2 coordinates" column, a positive value means that the measured coordinates are in the positive direction relative to the ideal coordinates. Figure 28A Offset to the right of . Figure 32 In the "D2 coordinates" column, negative values mean that the measured coordinates are in the opposite direction to the ideal coordinates. Figure 28A Left offset.

[0440] In addition, the coordinates of the through-holes 56 relative to the center C1 are measured. The number of through-holes 56 measured is 15. Next, the maximum value of the distance between the coordinates of the measured through-holes 56 and the coordinates of the ideal through-holes 56 is calculated. The calculation results are shown in Figure 32 in the "PPA" column.

[0441] During the step of measuring the coordinates of through-holes 56, tension is applied to mask 50. Specifically, the coordinates of through-holes 56 in mask 50 fixed to frame 41 are measured. The coordinates of through-holes 56 are measured by a measuring device included in the apparatus for fixing mask 50 to frame 41.

[0442] The step of measuring the coordinates of the reference points P5 to P8 is performed without applying tension to the mask 50 .

[0443] (Example 57~Example 66)

[0444] In Examples 57 to 66, similarly to Examples 50 to 56, a first portion 50A and a second portion 50B were manufactured. Figure 28A Mask 50. The design values of the mask dimensions are the same as those in Examples 50 to 56.

[0445] As in the cases of Examples 50 to 56, the coordinates of the reference points P5 to P8 relative to the center C1 are measured. Next, the deviations between the coordinates of the measured reference points P5 to P8 and the coordinates of the ideal reference points P5 to P8 are calculated in the first direction D1 and the second direction D2. The calculation results are shown in FIG. Figure 33 The unit of the numerical value is μm.

[0446] In addition, the coordinates of the through-holes 56 relative to the center C1 were measured in the same manner as in Examples 50 to 56. The number of through-holes 56 measured was 15. Next, the maximum value of the distance between the coordinates of the measured through-holes 56 and the coordinates of the ideal through-holes 56 was calculated. The calculation results are shown in FIG. Figure 33 in the "PPA" column.

[0447] like Figure 32 and Figure 33 As shown, when the absolute values of the offsets of the coordinates of reference points P5 to P8 in the first direction D1 and the second direction D2 are all 3.0 μm or less, the PPA is 3.0 μm or less. On the other hand, when at least one of the absolute values of the offsets of the coordinates of markers M1 to M4 in the first direction D1 and the second direction D2 exceeds 3.0 μm, the PPA exceeds 3.0 μm.

Claims

1. A manufacturing method, which is a method for manufacturing a mask, wherein: The mask includes: a first end portion and a second end portion facing each other in a first direction; and a middle portion located between the first end portion and the second end portion and including a through hole group. The manufacturing method comprises: a middle portion forming step of forming an outer edge of the middle portion and the through hole group on an original substrate; a first end portion forming step of forming an outer edge of the first end portion on the original substrate; and a second end forming step of forming an outer edge of the second end on the original substrate; A first step portion is formed by the middle portion forming step, the first end portion forming step, and the second end portion forming step. The first step portion is located at a boundary between the first end portion and the middle portion and is displaced in a second direction orthogonal to the first direction. The dimension of the first step portion in the second direction is 1 mm or less. The intermediate portion forming step includes: exposing the resist layer on the original substrate using a first exposure mask; and etching the original substrate through the exposed and developed resist layer. The first end portion forming step includes: exposing the resist layer on the original substrate using a second exposure mask; and etching the original substrate through the exposed and developed resist layer. The second end portion forming step includes: exposing the resist layer on the original substrate using a third exposure mask; and etching the original substrate through the exposed and developed resist layer. The resist layer on the original substrate exposed using the first exposure mask, the resist layer on the original substrate exposed using the second exposure mask, and the resist layer on the original substrate exposed using the third exposure mask are simultaneously developed.

2. The manufacturing method according to claim 1, wherein The first exposure mask has a rectangular shape including a first side and a second side, The first side is greater than 1250 mm, The second side is greater than 1100 mm.

3. The manufacturing method according to claim 1, wherein: The thickness of the original substrate is less than 40 μm.

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