Wafer conditioning apparatus, reaction chamber, and wafer conditioning method

Abstract

Embodiments of the present application provide a wafer adjusting device, a reaction chamber and a wafer adjusting method. The wafer adjusting device comprises: a lifting module having a first bearing surface for bearing a wafer, the first bearing surface being capable of rising to a preset highest position or falling to a preset lowest position relative to a reference surface; a bearing module having a second bearing surface, the second bearing surface being located higher than the preset lowest position and lower than the preset highest position, and the second bearing surface being used for transferring the wafer borne by the first bearing surface; and a pumping module having a first pumping port facing the wafer and surrounded by the second bearing surface, and the pumping module being used for adsorbing the wafer through the first pumping port. The embodiments of the present application are beneficial to shortening the adjusting time of the wafer.

Description

Technical Field

[0001] Embodiments of the present invention relate to the semiconductor field, and in particular to a wafer conditioning device, a reaction chamber, and a wafer conditioning method. Background Art

[0002] In existing technology, wafers require intermediate conditioning between the completion of one process and the start of the next to ensure they meet the requirements of the next process. These requirements may vary from process to process, and even for the same process in different reaction chambers. These intermediate conditioning processes include controlling the wafer's position, temperature, and stress.

[0003] Long intermediate wafer conditioning times lead to longer semiconductor structure fabrication times and lower semiconductor structure yields. Current research focuses on how to shorten this conditioning time while ensuring the wafer state meets process requirements. Summary of the Invention

[0004] Embodiments of the present invention provide a wafer conditioning device, a reaction chamber, and a wafer conditioning method, which are beneficial for shortening the wafer conditioning time.

[0005] To solve the above problems, an embodiment of the present invention provides a wafer adjustment device, including: a lifting module, the lifting module having a first carrying surface for carrying the wafer, the first carrying surface can rise to a preset highest position or fall to a preset lowest position relative to a reference plane; a carrying module, the carrying module having a second carrying surface, the position of the second carrying surface is higher than the preset lowest position and lower than the preset highest position, the second carrying surface is used to transfer the wafer carried by the first carrying surface; an exhaust module, the exhaust module having a first exhaust port surrounded by the second carrying surface and facing the wafer, the exhaust module is used to adsorb the wafer through the first exhaust port.

[0006] In addition, the exhaust module is further used to control the exhaust rate of the first exhaust port so that the first pressure from the first exhaust port to which the wafer carried by the carrying module is subjected is 1 KPa to 30 KPa.

[0007] In addition, the carrying module includes a plurality of carrying units, the carrying surfaces of the plurality of carrying units constitute the second carrying surface, the exhaust module has a plurality of first exhaust ports, and the carrying surface of each carrying unit surrounds a first exhaust port.

[0008] In addition, the carrying module includes a first carrying unit and multiple second carrying units, the third carrying surface of the first carrying unit and the fourth carrying surface of the second carrying unit constitute the second carrying surface, the multiple centers corresponding to the multiple fourth carrying surfaces are on the same circle, the center of the third carrying surface coincides with the center of the circle, and the third carrying surface and each of the fourth carrying surfaces each surround one of the first air exhaust ports.

[0009] In addition, the wafer adjustment device also includes: a base plate, the top surface of the base plate serves as the reference plane, the reference plane is lower than or at the preset lowest position, the exhaust module also has a second exhaust port facing the wafer surrounded by the reference plane, the exhaust module is also used to adsorb the wafer through the second exhaust port, the multiple centers corresponding to the multiple first exhaust ports are on the same circle, and the center of the second exhaust port coincides with the center of the circle.

[0010] In addition, the exhaust module is used to simultaneously adsorb the wafer through the first exhaust port and the second exhaust port, and the exhaust module is also used to control the exhaust rate of the second exhaust port so that the adsorption force applied to the wafer through the second exhaust port is less than the adsorption force applied to the wafer through the first exhaust port.

[0011] In addition, the exhaust module is used to control the second pressure from the second exhaust port to which the wafer carried by the carrying module is subjected to to be 1 KPa to 2 KPa.

[0012] In addition, an exhaust pipe having the first exhaust port is arranged in the supporting module, and the second supporting surface exposes the first exhaust port. In the direction perpendicular to the reference plane, the orthographic projection of the first exhaust port on the plane where the second supporting surface is located is surrounded by the second supporting surface.

[0013] In addition, the supporting module includes a fixing part and a supporting part, the supporting part has a columnar structure, the exhaust pipe is arranged in the columnar structure, the fixing part is an annular structure arranged on the top edge of the columnar structure, and the material of the annular structure is an elastic material.

[0014] In addition, the first exhaust port is composed of at least two sub-exhaust ports, and the exhaust module is used to absorb the wafer through the at least two sub-exhaust ports.

[0015] In addition, the first air exhaust port is composed of three sub-air exhaust ports, and the line connecting the centers of the three sub-air exhaust ports forms an equilateral triangle. In the direction perpendicular to the reference plane, the orthographic projection of the center of the equilateral triangle coincides with the orthographic projection of the center of the second bearing surface.

[0016] Correspondingly, an embodiment of the present invention also provides a reaction chamber, comprising: a coating and developing device for coating photoresist on the wafer carried by the wafer adjustment device; a wafer adjustment device as described in any of the above items, wherein the wafer adjustment device is used to adjust the wafer coated with the photoresist.

[0017] Correspondingly, an embodiment of the present invention also provides a wafer adjustment method, including: providing a wafer adjustment device as described in any one of the above items; controlling the first carrying surface of the lifting module to rise to a preset highest position; providing a wafer and controlling the wafer to be carried on the first carrying surface; controlling the first carrying surface to descend to a preset lowest position so that the second carrying surface of the carrying module can transfer the wafer; and turning on the exhaust module to adsorb the wafer through the first exhaust port.

[0018] In addition, before controlling the lifting module to descend, the air extraction module is turned on.

[0019] In addition, the carrying module includes multiple carrying units, the carrying surfaces of the multiple carrying units constitute the second carrying surface of the carrying module, the exhaust module has multiple first exhaust ports, and the carrying surface of each carrying unit surrounds a first exhaust port; opening the exhaust module includes: controlling the exhaust rate of the first exhaust port so that the total pressure of the wafer carried by the carrying module from the first exhaust port is 1KPa~30KPa.

[0020] In addition, the opening time of the exhaust module is 5 to 50 seconds.

[0021] Compared with the prior art, the technical solution provided by the embodiment of the present invention has the following advantages:

[0022] In the above technical solution, a lifting module that can adjust the vertical position of the wafer and a first air exhaust port surrounded by a second carrying surface are provided. The first air exhaust port absorbs the wafer by suction and fixes the wafer on the carrying module. The adsorption effect of the first air exhaust port can release or uniformize the concentrated stress of the wafer and reduce the temperature of the wafer. That is to say, the wafer adjustment device can not only adjust the vertical height of the wafer relative to the reference plane, but also improve the stress condition of the wafer and regulate the temperature of the wafer at the same time. In this way, there is no need to set up multiple devices to adjust the position, stress or temperature of the wafer separately, which is conducive to shortening the wafer adjustment time.

[0023] In addition, the bearing surfaces of multiple bearing units constitute a second bearing surface. Compared with a single bearing surface, setting up multiple bearing surfaces is beneficial to ensuring uniform force on the wafer, avoiding stress damage to the wafer and accelerating the release of wafer stress. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] One or more embodiments are exemplarily illustrated by pictures in the corresponding drawings. These exemplifications do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings are represented as similar elements. Unless otherwise stated, the figures in the drawings do not constitute proportional limitations.

[0025] Figure 1 Schematic diagram of the double helix phenomenon of photoresist;

[0026] Figures 2 to 5 A schematic structural diagram of a wafer adjustment device provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0027] After the wafer completes the corresponding process in the coating and developing device, it is transferred to the Interface Block Chill Plate Process Station (ICPL) to pre-regulate the wafer temperature through the ICPL. After being transferred to the ICPL, the wafer is further transferred based on the occupancy of the Temperature Stabilization Unit (TSU). Specifically, if there are other wafers in the TSU or a fault occurs, the wafer is transferred to the Stationary Buffering Stage (SBU) to wait for the TSU to be repaired or to be empty. The SBU does not have a temperature control function for wafers. If there are no other wafers in the TSU and it is in normal condition, the wafer is transferred from the ICPL or SBU to the TSU.

[0028] The TSU is located in the same chamber as the scanning exposure unit. The TSU is used to release the stress of the wafer and further control the temperature of the wafer to prepare for the photoresist exposure of the scanning exposure unit. Since the ICPL has already controlled the wafer temperature in advance, the temperature control time of the TSU will be shortened. However, based on the existing process parameters of the ICPL and TSU, after temperature control and stress release, the technicians found that the photoresist exposed by the scanning exposure unit showed a double helix phenomenon (reference Figure 1 ), that is, the photoresist on the wafer 14 is affected by Figure 1 The stress in the direction of the middle arrow indicates that the stress release of wafer 14 does not meet the requirements. To suppress the double helix phenomenon, the TSU stress release time can be extended. However, this option will increase the production time of the semiconductor structure and reduce the production capacity of the semiconductor structure.

[0029] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more apparent, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, those skilled in the art will appreciate that many technical details are provided in the embodiments of the present invention to help readers better understand the present application. However, even without these technical details and the various variations and modifications based on the following embodiments, the technical solutions claimed in the present application can still be implemented.

[0030] Figures 2 to 5 The schematic diagram of the structure of the wafer adjustment device provided in the embodiment of the present invention is as follows. The wafer adjustment device can be regarded as an improvement of ICPL; wherein, Figure 3 for Figure 2 A schematic plan view of the structure shown, Figure 5 for Figure 2 Schematic diagram of the structure of the load-bearing unit in the structure shown.

[0031] refer to Figure 2 and Figure 3 The wafer adjustment device includes: a lifting module 11, the lifting module 11 has a first carrying surface for carrying the wafer 14, the first carrying surface can be raised to a preset highest position or lowered to a preset lowest position relative to the reference surface 10a; a carrying module 12, the carrying module 12 has a second carrying surface, the position of the second carrying surface is higher than the preset lowest position and lower than the preset highest position, the second carrying surface is used to transfer the wafer 14 carried by the first carrying surface; an exhaust module (not shown), the exhaust module has a first exhaust port 13 surrounded by the second carrying surface and facing the wafer 14, the exhaust module is used to adsorb the wafer 14 through the first exhaust port 13.

[0032] In this embodiment, the lifting module 11 includes a plurality of support rods. The lifting module 11 is used to carry the wafer 14 transferred by the robotic arm. In order to prevent the robotic arm from colliding with the structure where the reference surface 10a is located due to position deviation, the robotic arm is generally set to have a minimum vertical height relative to the reference surface 10a. The lifting module 11 can set a preset maximum position based on the minimum vertical height. Specifically, the preset maximum position is set to be higher than or flush with the minimum vertical height, so as to ensure that the robotic arm can safely transfer the wafer 14 to the first carrying surface; accordingly, the preset minimum position can be within the reference surface 10a. When the lifting module 11 descends, the first carrying surface moves from the preset maximum position to the preset minimum position. When the first carrying surface is flush with the second carrying surface, the first carrying surface and the second carrying surface jointly carry the wafer 14; when the first carrying surface is lower than the second carrying surface, the second carrying surface transfers the wafer 14.

[0033] Since the lifting module 11 is a movable structure, the probability of the wafer 14 being damaged due to a failure of the lifting module 11 is higher than that of the fixed carrying module 12. Therefore, providing a carrying module 12 with a second carrying surface is beneficial to reducing the damage rate of the wafer 14; accordingly, since the second carrying surface is closer to the reference surface 10a relative to the preset highest position, the force from the reference surface 10a can more effectively affect the wafer 14 carried by the second carrying surface, thereby achieving the preset purpose.

[0034] In this embodiment, the exhaust module absorbs the wafer 14 by exhausting air. The exhaust action not only removes heat from the surface of the wafer 14 to reduce the temperature of the wafer 14, but also applies an adsorption force to balance the stress state at different locations on the wafer 14, thereby avoiding stress concentration problems on the wafer 14. If the exhaust module only applies an adsorption force to an area on the back of the wafer 14, the wafer 14 will tend to stress balance within a certain area with the geometric center of the adsorption area as the stress balance point. The area of ​​the area tending to stress balance is related to the area of ​​the adsorption area. The larger the area of ​​the adsorption area, the larger the area tending to stress balance. If the exhaust module absorbs the wafer through multiple discrete areas, the wafer 14 will have multiple corresponding stress balance areas. A stress balance area refers to a stress at any location within a certain area that is less than a preset value and a stress difference at different locations that is less than a preset value. The wafer 14 will not suffer damage such as cracking due to excessive absolute stress or large relative stress at a certain location.

[0035] Compared with adsorbing the wafer 14 through a single area, adsorbing the wafer 14 through multiple discrete areas is beneficial to expanding the stress balance area of ​​the wafer 14 and achieving the overall stress balance of the wafer 14 more quickly; at the same time, since the second carrying surface surrounds the first exhaust port 13, if the exhaust module adsorbs the wafer 14 through multiple discrete areas, the carrying module 12 carries the wafer 14 through multiple discrete carrying surfaces. When the total carrying area is the same, carrying through multiple discrete carrying surfaces is beneficial to shortening the distance between the carrying point and the edge of the wafer 14, avoiding the edge of the wafer 14 from being subjected to greater stress due to its distance from the support point; further, setting the second carrying surface to surround the first exhaust port 13 is beneficial to suppressing the deformation of the wafer 14 caused by the adsorption force, and then suppressing the stress concentration problem caused by the deformation of the wafer 14, so that the wafer 14 has a good stress state.

[0036] In this embodiment, the carrying module 12 includes a plurality of separate carrying units 123 , the carrying surfaces of the plurality of carrying units 123 constitute a second carrying surface, and the exhaust module has a plurality of first exhaust ports 13 , and the carrying surface of each carrying unit 123 surrounds at least one first exhaust port 13 .

[0037] In some embodiments, the carrier module 12 includes multiple second carrier units 122, each of which has a fourth carrier surface. The multiple fourth carrier surfaces constitute a second carrier surface, and the multiple centers corresponding to the multiple fourth carrier surfaces are located on the same circle. For example, the carrier module includes three second carrier units 122, and the line connecting the three centers corresponding to the fourth carrier surface forms an equilateral triangle. Because the spacing between the three centers is equal, the overlapping area of ​​the adsorption regions corresponding to different first exhaust ports 13 is small, and the overlap of the stress balance regions corresponding to the adsorption regions is small. This helps maximize the stress balance region of the wafer 14 and optimize the stress state of the wafer 14. At the same time, because the line connecting the three centers forms an equilateral triangle, the three second carrier units 122 can more stably support the wafer 14, and the adsorption force applied to the wafer 14 by the exhaust module has symmetrical characteristics. This helps to make the stress states of different symmetrical positions in the wafer 14 similar, and the stress balance of the wafer 14 is better.

[0038] In some embodiments, the carrier module 12 further includes a first carrier unit 121, which has a third carrier surface. The third carrier surface and the fourth carrier surface together constitute a second carrier surface. The centers corresponding to the multiple fourth carrier surfaces are located on the same circle, and the center of the third carrier surface coincides with the center of the aforementioned circle. The third carrier surface and each of the fourth carrier surfaces each surround at least one first exhaust port 13. After achieving stress balance in multiple local areas of the wafer 14 through the multiple first exhaust ports 13 on the multiple second carrier units 122, the provision of the first carrier unit 121 located in the center facilitates improving stress balance between different local areas, thereby improving the overall stress balance of the wafer 14.

[0039] In this embodiment, the exhaust module is also used to control the exhaust rate of the first exhaust port 13, so that the first pressure from the first exhaust port 13 to which the wafer carried by the carrying module 12 is subjected is 1KPa to 30KPa, such as 5KPa, 10KPa, 15KPa or 25KPa. It can be known that the greater the exhaust rate of the first exhaust port 13, the greater the adsorption force exerted by the exhaust module on the wafer 14, and the greater the first pressure borne by the wafer 14. Controlling the first pressure above 1KPa is conducive to avoiding a long stress release time due to a too slow exhaust rate, thereby ensuring that the temperature adjustment time and stress adjustment time of the wafer meet the requirements; accordingly, controlling the first pressure below 30KPa is conducive to avoiding stress deformation of the wafer 14 due to excessive first pressure, thereby ensuring that the wafer 14 has a good stress state and functional characteristics.

[0040] In other embodiments, reference Figure 4The wafer adjustment device also includes: a base plate 20, the top surface of the base plate 20 serves as a reference plane 20a, the reference plane 20a is lower than or at a preset lowest position, the exhaust module also has a second exhaust port 232 facing the wafer 24 surrounded by the reference plane 20a, and the exhaust module is further used to adsorb the wafer 24 through the second exhaust port 232. The multiple centers corresponding to the multiple first exhaust ports 231 are on the same circle, and the orthographic projection of the center of the circle on the reference plane 20a coincides with the center of the second exhaust port 232.

[0041] Furthermore, the exhaust module is used to simultaneously adsorb the wafer 24 through the first exhaust port 231 and the second exhaust port 232. The exhaust module is also used to control the exhaust rate of the second exhaust port 232 so that the adsorption force applied to the wafer 24 through the second exhaust port 232 is smaller than the adsorption force applied to the wafer 24 through the multiple first exhaust ports 231. Since there is no support in the adsorption area corresponding to the second exhaust port 232, setting the adsorption force of the second exhaust port 232 to be smaller than that of the first exhaust port 231 is beneficial for avoiding stress deformation of the wafer 24 due to excessive adsorption force, thereby ensuring that the wafer 24 has a good stress state and that the first exhaust port 231 and the second exhaust port 232 can release the stress in the wafer 24 in a relatively short period of time.

[0042] Specifically, the exhaust module is used to control the second pressure from the second exhaust port 232 to which the wafer 24 carried by the carrying module 12 is subjected to to be 1 KPa to 2 KPa, for example, 1.3 KPa, 1.5 KPa, and 1.7 KPa.

[0043] In this embodiment, reference Figure 2 The exhaust module further includes a third exhaust port 15 disposed on the reference surface 10a. The exhaust module can deliver or exhaust air through the third exhaust port 15. It can be seen that whether the third exhaust port 15 delivers or exhausts air, it can remove heat from the surface of the wafer 14, thereby regulating the temperature of the wafer 14. In addition, if further adsorption of the wafer 14 is required or stress release of the wafer 14 is accelerated, the third exhaust port 15 can be used to extract and adsorb the wafer 14.

[0044] In this embodiment, an exhaust pipe having a first exhaust port 13 is arranged in the supporting module 12, and the second supporting surface exposes the first exhaust port 13. In the direction perpendicular to the reference plane 10a, the orthographic projection of the first exhaust port 13 on the plane where the second supporting surface is located is surrounded by the second supporting surface.

[0045] refer to Figure 5The carrying module includes a fixing portion 12b and a supporting portion 12a. The supporting portion 12a has a columnar structure. The exhaust pipe having a first exhaust port 13 is arranged in the columnar structure. The fixing portion 12b is an annular structure arranged on the edge of the top surface of the columnar structure 12a. The top surface of the annular structure serves as the bearing surface of the carrying module. The material of the annular structure is an elastic material, such as a rubber material.

[0046] The supporting portion 12a is generally made of a material with higher hardness to maintain stability. The fixing portion 12b is arranged above the supporting portion 12a, which is conducive to isolating the wafer and the supporting portion 12a, and avoiding friction damage between the supporting portion 12a and the wafer; at the same time, the fixing portion 12b is arranged at the top edge, which is conducive to expanding the area of ​​the adsorption area corresponding to the first air outlet 13 and shortening the time required for stress release and temperature control compared to setting the plane where the first air outlet 13 is located as the second bearing surface; at the same time, the material of the fixing portion 12b is set to an elastic material, which is conducive to avoiding damage to the wafer caused by the fixing portion 12b under the action of the adsorption force; preferably, the material of the fixing portion 12b is set to a rubber material, which is conducive to increasing the friction coefficient between the fixing portion 12b and the wafer, avoiding the wafer from shifting, thereby ensuring that the adsorption force of the first air outlet 13 can be evenly applied to the wafer, and ensuring uniform release of wafer stress.

[0047] Furthermore, the carrier module further includes a buffer portion 12c, which is used to buffer the instantaneous stress when the carrier module transfers the wafer. The buffer portion 12c can be an elastic structure, such as a spring.

[0048] In this embodiment, the first air inlet 13 is composed of at least two sub-air inlets. The air extraction module is used to absorb the wafer through the at least two sub-air inlets. The geometric center of the combined pattern formed by all the sub-air inlets serves as the center of the first air inlet 13, and the sum of the absorption forces of all the sub-air inlets serves as the absorption force of the first air inlet 13. Splitting the first air inlet 13 into multiple sub-air inlets helps improve the uniformity of the force applied to the absorption area corresponding to the first air inlet 13, further preventing stress deformation of the wafer due to the large absorption force.

[0049] Exemplarily, the first air extraction port 13 is composed of three sub-air extraction ports, the lines connecting the centers of the three sub-air extraction ports form an equilateral triangle, and the center of the equilateral triangle serves as the center of the first air extraction port 13 .

[0050] In this embodiment, a lifting module that can adjust the vertical position of the wafer and a first air exhaust port surrounded by a second carrying surface are provided. The first air exhaust port absorbs the wafer by suction and fixes the wafer on the carrying module. The adsorption effect of the first air exhaust port can release or uniformize the concentrated stress of the wafer and reduce the temperature of the wafer. That is to say, the wafer adjustment device can not only adjust the vertical height of the wafer relative to the reference plane, but also improve the stress condition of the wafer and regulate the temperature of the wafer at the same time. In this way, there is no need to set up multiple devices to adjust the position, stress or temperature of the wafer respectively, which is conducive to shortening the wafer adjustment time and improving the output of the scanning exposure device.

[0051] Accordingly, an embodiment of the present invention also provides a reaction chamber, comprising: a coating and developing device for coating photoresist on a wafer carried by a wafer adjustment device; a wafer adjustment device such as any of the above items, the wafer adjustment device being used to adjust a wafer coated with photoresist.

[0052] In this embodiment, the wafer temperature is controlled and the stress of the wafer is released in advance by the wafer adjustment device, which helps to shorten or even eliminate the temperature control time and stress release time required for subsequent entry into the scanning exposure chamber, thereby improving the output of the scanning exposure device.

[0053] Correspondingly, an embodiment of the present invention also provides a wafer adjustment method, including: providing a wafer adjustment device as any of the above items; controlling the first carrying surface of the lifting module to rise to a preset highest position; providing a wafer and controlling the wafer to be carried on the first carrying surface; controlling the first carrying surface to descend to a preset lowest position so that the second carrying surface of the carrying module can transfer the wafer; turning on the exhaust module to adsorb the wafer through the first exhaust port.

[0054] In this embodiment, the exhaust module is turned on before the lifting module is controlled to descend, so as to help fix the wafer on the lifting module through adsorption force and prevent the wafer from shifting at the beginning and during the descent.

[0055] In this embodiment, the carrying module includes multiple carrying units, the carrying surfaces of the multiple carrying units constitute the second carrying surface of the carrying module, the exhaust module has multiple first exhaust ports, and the carrying surface of each carrying unit surrounds a first exhaust port; turning on the exhaust module includes: controlling the exhaust rate of the first exhaust port so that the total pressure of the wafer carried by the carrying module from the first exhaust port is 1KPa~30KPa, for example, 5KPa, 10KPa, 15KPa or 25KPa.

[0056] In this embodiment, the opening time of the exhaust module is 5 to 50 seconds, for example, 10 seconds, 20 seconds, 30 seconds or 40 seconds. The opening time of the exhaust module can be adjusted according to actual needs to effectively shorten the adjustment time of the wafer and avoid the double helix phenomenon of the photoresist.

[0057] In this embodiment, the setting of the first supporting surface can adjust the relative position of the wafer, the adsorption effect of the first exhaust port can release or uniformize the concentrated stress of the wafer, and can regulate the temperature of the wafer. That is to say, the wafer adjustment device can not only adjust the vertical height of the wafer relative to the reference plane, but also improve the stress condition of the wafer and reduce the temperature of the wafer at the same time. In this way, there is no need to set up multiple devices to adjust the position, stress or temperature of the wafer separately, which is conducive to shortening the wafer adjustment time and improving the output of the scanning exposure device.

[0058] Those skilled in the art will appreciate that the above-described embodiments are specific examples of the present invention, and that in actual applications, various changes in form and detail may be made thereto without departing from the spirit and scope of the present invention. Any person skilled in the art may make changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope defined in the claims.

Claims

1. A wafer conditioning device, characterized in that: include: A lifting module, wherein the lifting module has a first carrying surface for carrying the wafer, and the first carrying surface can be raised to a preset highest position or lowered to a preset lowest position relative to the reference plane; A carrying module, wherein the carrying module has a plurality of carrying units, the carrying surfaces of the plurality of carrying units constitute a second carrying surface, the position of the second carrying surface is higher than the preset lowest position and lower than the preset highest position, and the second carrying surface is used to transfer the wafer carried by the first carrying surface; A base plate, wherein the top surface of the base plate serves as the reference surface, and the reference surface is lower than or at the preset lowest position; an exhaust module, the exhaust module having a plurality of first exhaust ports surrounded by the second carrying surface and facing the wafer, and a second exhaust port surrounded by the reference surface and facing the wafer, the carrying surface of each of the carrying units surrounding one of the first exhaust ports, the exhaust module being configured to simultaneously adsorb the wafer through the plurality of first exhaust ports and the second exhaust ports, and the exhaust module being further configured to control an exhaust rate of the second exhaust port so that a suction force applied to the wafer through the second exhaust port is less than a suction force applied to the wafer through the first exhaust port; The centers corresponding to the first air extraction ports are located on the same circle, and the center of the second air extraction port coincides with the center of the circle.

2. The wafer adjustment device according to claim 1, wherein: The exhaust module is further configured to control an exhaust rate of the first exhaust port so that the first pressure from the first exhaust port to which the wafer carried by the carrying module is subjected is 1 KPa to 30 KPa.

3. The wafer adjustment device according to claim 1, wherein: The carrying module includes a first carrying unit and multiple second carrying units. The third carrying surface of the first carrying unit and the fourth carrying surface of the second carrying unit constitute the second carrying surface. The multiple centers corresponding to the multiple fourth carrying surfaces are on the same circle. The center of the third carrying surface coincides with the center of the circle. The third carrying surface and each of the fourth carrying surfaces each surround one of the first air exhaust ports.

4. The wafer adjustment device according to claim 1, wherein: The exhaust module is used to control the second pressure from the second exhaust port to which the wafer carried by the carrying module is subjected to to be 1 KPa to 2 KPa.

5. The wafer adjustment device according to claim 1, wherein: An exhaust pipe having the first exhaust port is arranged in the supporting module, and the second supporting surface exposes the first exhaust port. In the direction perpendicular to the reference plane, the orthographic projection of the first exhaust port on the plane where the second supporting surface is located is surrounded by the second supporting surface.

6. The wafer adjustment device according to claim 5, characterized in that: The supporting module includes a fixing portion and a supporting portion. The supporting portion has a columnar structure. The exhaust pipe is arranged in the columnar structure. The fixing portion is an annular structure arranged on the edge of the top surface of the columnar structure. The material of the annular structure is an elastic material.

7. The wafer adjustment device according to claim 1, wherein: The first exhaust port is composed of at least two sub-exhaust ports, and the exhaust module is used to absorb the wafer through the at least two sub-exhaust ports.

8. The wafer adjustment device according to claim 7, wherein: The first air extraction port is composed of three sub-air extraction ports, and the line connecting the centers of the three sub-air extraction ports forms an equilateral triangle, and the center of the equilateral triangle serves as the center of the first air extraction port.

9. A reaction chamber, characterized in that: include: a coating and developing device for coating photoresist onto the wafer carried by the wafer conditioning device; The wafer conditioning device according to any one of claims 1 to 8, wherein the wafer conditioning device is used to adjust the wafer coated with the photoresist.

10. A wafer conditioning method, characterized in that: include: Providing a wafer conditioning device according to any one of claims 1 to 8; Controlling the first bearing surface of the lifting module to rise to a preset highest position; Providing a wafer and controlling the wafer to be loaded on the first loading surface; Controlling the first carrying surface to descend to a preset lowest position so that the second carrying surface of the carrying module can transfer the wafer; The exhaust module is turned on to absorb the wafer through the first exhaust port.

11. The wafer adjustment method according to claim 10, wherein: Before controlling the lifting module to descend, the air extraction module is turned on.

12. The wafer adjustment method according to claim 10, wherein: The carrying module includes a plurality of carrying units, the carrying surfaces of the plurality of carrying units constitute the second carrying surface of the carrying module, the exhaust module has a plurality of the first exhaust ports, and the carrying surface of each of the carrying units surrounds one of the first exhaust ports; The turning on the exhaust module includes controlling an exhaust rate of the first exhaust port so that a total pressure from the first exhaust port to which the wafer carried by the carrying module is subjected is 1 KPa to 30 KPa.

13. The wafer adjustment method according to claim 11, wherein: The opening time of the exhaust module is 5 to 50 seconds.

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