A planar inductor based on striped soft magnetic film and its preparation method

Abstract

The present invention relates to a planar inductor based on a striped soft magnetic film and a preparation method thereof. The planar inductor is arranged on a substrate (4) and comprises an inductor coil (2) and a striped soft magnetic film (1) and a multilayer soft magnetic film (3) coated on the upper and lower sides of the inductor coil; the striped soft magnetic film (1) on the upper side of the inductor coil (2) is a striped structure formed by alternating soft magnetic material fine lines (7) and high resistance material fine lines (8); the multilayer soft magnetic film (3) on the lower side of the inductor coil (2) is composed of alternately stacked soft magnetic material films (6) and high resistance material films (5); the stripe direction of the upper striped soft magnetic film (1) is perpendicular to the direction of the coated inductor coil (2) and parallel to the direction of the magnetic field lines. The planar inductor is prepared by combining magnetron sputtering and micro-nano technology, has the characteristics of simple structure, small size, and high inductance density, and can be used in high-frequency integrated electronic circuits or flexible electronic circuits.

Description

Technical Field

[0001] The present invention belongs to the technical field of planar inductors applied to integrated circuits, and relates to a planar inductor based on a striped soft magnetic film and a preparation method thereof. Background Art

[0002] As the three basic components in electronic circuits, resistors and capacitors have achieved high frequency and miniaturization, while inductor technology has always been difficult to break through in chip integrated circuits. The main core problem is how to solve the problem of comprehensively improving the chip's inductance density and quality factor under the application limitations of micron and submicron space and high operating frequency. Technological breakthroughs in chip inductor components will help give birth to a new generation of SoC designs. Chinese invention patent application No. 202110530371.0 discloses a "planar inductor based on three-layer nano-ferromagnetic film". The three layers of nano-ferromagnetic film are all soft magnetic films FexNyXz with a coercivity of less than 10Oe. X can be two elements, B or Si. The planar inductor is made of three layers of FexNyXz soft magnetic films through micro-nano processing technology. The thickness of the three layers can range from 5 to 80nm. Three-layer nano-ferromagnetic films have the characteristics of high frequency and high magnetic permeability, and can be used to prepare planar inductors for high-frequency electronic devices; however, this solution has a complex process, and the resistivity of the planar inductor produced is low. It also cannot make good use of the anisotropy of the magnetic film, resulting in large losses and low inductance density. Summary of the Invention

[0003] In view of the above technical problems, the object of the present invention is to provide a planar inductor with a stripe-type soft magnetic film having high orientation and high resistivity and a preparation method thereof.

[0004] The purpose of the present invention is achieved through the following technical solutions:

[0005] A planar inductor based on a striped soft magnetic film is disposed on a substrate 4 having an inductor coil 2. The upper and lower sides of the inductor coil 2 are coated with a striped soft magnetic film 1 and a multilayer soft magnetic film 3. The striped soft magnetic film 1 on the upper side of the inductor coil 2 is a striped structure composed of fine lines 7 of soft magnetic material and fine lines 8 of high-resistance material. The multilayer soft magnetic film 3 on the lower side of the inductor coil 2 is composed of multiple groups of closely contacting soft magnetic films, wherein each group of soft magnetic films 3 is composed of an upper soft magnetic material film 6 and a lower high-resistance material film 5. The stripes of the upper striped soft magnetic film 1 are perpendicular to the direction of the coated inductor coil 2 and parallel to the direction of the magnetic field lines.

[0006] The stripe-type soft magnetic film 1 and the multilayer soft magnetic film 3 are connected via magnetic pillars 9;

[0007] The stripe-type soft magnetic film 1 and the multilayer soft magnetic film 3 are insulated from the inductor coil 2 by dielectrics.

[0008] The width of the soft magnetic fine lines (7) in the striped soft magnetic film 1 is 10-60 μm, the gap between the stripes is 10-60 μm, and the length of the striped soft magnetic film 1 covering the inductor coil 2 is 100-400 μm.

[0009] The multilayer soft magnetic film 3 is an upper soft magnetic material film 6 and a lower high resistance material film 5 alternately stacked. The thickness of the soft magnetic material film 6 is 0.1-1μm, the thickness of the high resistance material film 5 is 10-60μm, and the thickness of the multilayer soft magnetic film 3 is 1-2μm.

[0010] The line width of the inductor coil 2 is 5-40 μm, the spacing between the inductor coils 2 is 10-60 μm, and the total area of ​​the inductor coil 2 is 0.5-5 mm 2 The inductor coil 2 is made of a metal material with good conductivity selected from gold, silver, copper and titanium.

[0011] The substrate 4 is made of glass, quartz high-resistance silicon, or flexible organic polymers such as polyphenylene vinylene and polydimethylsiloxane.

[0012] The materials of the soft magnetic material fine lines and the soft magnetic material film are selected from silicon steel, ferrite, polycrystalline soft magnetic material, amorphous soft magnetic material or nanocrystalline soft magnetic material.

[0013] The materials of the soft magnetic material fine lines and the soft magnetic material film are FeCoB polycrystalline soft magnetic material.

[0014] The material of the high-resistance material fine lines and the high-resistance material film is one of zinc oxide, boron oxide, aluminum oxide, silicon nitride, boron nitride and silicon dioxide.

[0015] The dielectric is ceramic, glass, high molecular polymer solid dielectric or polyimide.

[0016] The proportion of the soft magnetic material in the stripe-type magnetic film 1 is 10 vol% to 80 vol%.

[0017] The proportion of the soft magnetic material in the stripe-type magnetic film 1 is 50 vol% to 80 vol%.

[0018] The inductance density of this planar inductor is 145~157nH / mm at a frequency of 1~3GHz. 2 , the quality factor is 11 to 15;

[0019] The magnetic film portion of the planar inductor has a saturation magnetic induction intensity of 1000-1300 GS and a resistivity of 8000-12000 μΩ·cm, wherein the anisotropy field of the striped soft magnetic film is 350-650 Oe.

[0020] A method for preparing a planar inductor based on a striped soft magnetic film is prepared by combining a magnetron sputtering process with a micro-nano processing process, and the method comprises the following steps:

[0021] a. Clean the substrate 4 to remove impurities on its surface;

[0022] b. Using photolithographic stripping to produce the lower multilayer soft magnetic film 3;

[0023] c. Spin-coated and pre-imidized polyimide as the insulating layer between the lower multilayer soft magnetic film 3 and the inductor coil 2;

[0024] d. Using a photolithographic lift-off method to produce a pattern of the inductor coil 2;

[0025] e. Spin-coated and pre-imidized polyimide as an insulating layer between the upper stripe-type soft magnetic film 1 and the inductor coil 2;

[0026] f. Etching the through-hole pattern of the magnetic pillar 9 on the polyimide and curing the polyimide;

[0027] g. The through-holes of the magnetic pillars 9 are filled with a soft magnetic material by electroplating;

[0028] h. The upper stripe-type soft magnetic film 1 is produced by photolithographic stripping. After the planar inductor based on the stripe-type soft magnetic film is obtained, a layer of high-resistance material film is sputtered on the surface of the entire device using a magnetron sputtering process to fill the stripe gaps while insulating the entire planar inductor.

[0029] A use of the planar inductor based on the striped soft magnetic film as described above: for preparing high-frequency integrated electronic circuits or flexible electronic circuits.

[0030] Compared with the prior art, the present invention has the following beneficial effects:

[0031] The soft magnetic thin film planar inductor of the present invention is prepared by semiconductor micro-nano technology and has the characteristics of simple structure, small size, high inductance density, etc. It can be applied not only to high-frequency integrated electronic circuits, but also to flexible electronic circuits.

[0032] The planar inductor of the present invention features a coil structure with a striped magnetic film on top and a multilayer magnetic film on the bottom. This structure effectively utilizes the anisotropy of the striped magnetic film and the high resistivity of the multilayer soft magnetic film, resulting in high inductance density and a high quality factor. The combination of the striped soft magnetic film and the multilayer magnetic film, due to their high resistance and good orientation, effectively reduces eddy current losses in the inductor while improving the magnetic film's ability to resist magnetic bias, thereby effectively enhancing the inductance density and quality factor of the inductor at high frequencies. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 It is a structural schematic diagram of a planar inductor based on a striped soft magnetic film according to the present invention.

[0034] Reference numerals:

[0035] 1 Stripe-type soft magnetic film, 2 Inductor coil, 3 Multilayer soft magnetic film, 4 Substrate, 5 High-resistance material film, 6 Soft magnetic material film, 7 Fine lines of soft magnetic material, 8 Fine lines of high-resistance material, 9 Magnetic column DETAILED DESCRIPTION

[0036] The specific implementation of the present invention is further described in detail below with reference to the accompanying drawings and examples.

[0037] like Figure 1 As shown, a planar inductor based on a striped soft magnetic film includes a striped soft magnetic film 1, a multilayer soft magnetic film 3, a high-resistance material film 5, a soft magnetic material film 6, soft magnetic material fine lines 7, high-resistance material fine lines 8 and a magnetic column 9.

[0038] The planar inductor has a striped soft magnetic film 1 as its upper layer and a multilayer soft magnetic film 3 as its lower layer. The striped soft magnetic film 1 has a striped structure consisting of fine lines 7 of soft magnetic material alternating with fine lines 8 of high-resistance material. The multilayer soft magnetic film 3 is composed of multiple groups of closely contacting soft magnetic films, each group consisting of a soft magnetic material film 6 on the upper layer and a high-resistance material film 5 on the lower layer. The striped soft magnetic film 1 and the multilayer soft magnetic film 3 are connected by magnetic pillars 9.

[0039] The striped soft magnetic film 1 and the multilayer soft magnetic film 3 are respectively coated on the upper and lower sides of the inductor coil 2 on the surface of the substrate 4. The stripe direction of the upper striped soft magnetic film 1 is perpendicular to the direction of the coated inductor coil 2 and parallel to the direction of the magnetic field lines.

[0040] The width of the soft magnetic material fine lines 7 in the striped soft magnetic film 1 is 10-60 μm, the gap between the soft magnetic material fine lines 7 is 10-60 μm, and the length of the striped soft magnetic film 1 covering the coil is 100-400 μm. The multilayer soft magnetic film 3 is composed of multiple groups of closely contacted soft magnetic films. Each group of soft magnetic films is composed of a soft magnetic material film 6 and a high-resistance material film 5 arranged vertically. The soft magnetic material film 6 in each group of soft magnetic films has a thickness of 0.1-1 μm, the high-resistance material film 5 has a thickness of 0.1-1 μm, and the multilayer soft magnetic film 3 has a thickness of 1-10 μm.

[0041] The line width of the inductor coil 2 is 5-40 μm, the spacing between coils is 10-60 μm, and the total coil area is 0.5-5 mm2.

[0042] The multilayer soft magnetic film 3 and the inductor coil 2 are insulated by a dielectric. The substrate 4 is made of glass, quartz high-resistance silicon, or flexible organic polymers such as polyphenylene vinylene and polydimethylsiloxane.

[0043] In some embodiments, the soft magnetic material can be silicon steel or ferrite or soft magnetic alloy or amorphous soft magnetic material or nanocrystalline soft magnetic material. Preferably, the soft magnetic material can be FeCoB soft magnetic alloy, which has the characteristics of high saturation magnetic induction, high magnetic permeability, small coercive force, small magnetostriction coefficient, etc., and can effectively improve the inductance density of the inductor element.

[0044] In some embodiments, the high-resistance material is zinc oxide, boron oxide, aluminum oxide, silicon nitride, boron nitride, etc. Preferably, the high-resistance material can be silicon dioxide, which can effectively increase the resistivity of the multilayer soft magnetic film while having high stability.

[0045] In some embodiments, the dielectric is a solid dielectric such as ceramic, glass, or polymer. Preferably, the dielectric can be polyimide. Selecting polyimide as the dielectric has the characteristics of simple preparation and processing technology and strong reliability, and can effectively improve the electrical quality factor of the inductor component at high frequencies.

[0046] In some embodiments, the inductor coil 2 may be made of a metal material with good conductivity, such as gold, silver, copper, or titanium. Preferably, the inductor coil 2 may be made of copper, which is more compatible with semiconductor processes.

[0047] In some embodiments, the volume percentage of the soft magnetic material 6 in the striped magnetic film 1 is between 10% and 80%, preferably, between 50% and 80%. The striped magnetic film 1 with a volume percentage within the above range has excellent soft magnetic properties, and at the same time has a high anisotropy field, high saturation magnetization intensity and high resistivity.

[0048] The following describes a process scheme for producing a planar inductor based on a striped soft magnetic film according to the present invention.

[0049] The planar inductor of the striped soft magnetic film is processed by semiconductor micro-nano technology, which includes the following steps:

[0050] a. Clean the substrate 4 to remove surface impurities. Specifically, in some embodiments, a standard RCA cleaning process is used to clean the surface of the high-resistance silicon wafer and then blow-dried with nitrogen. However, the present invention is not limited thereto, and other methods may be used to clean the substrate 4.

[0051] b. The lower multilayer soft magnetic film 3 is formed by photolithographic stripping. Specifically, in some embodiments, a mask is used to pattern the lower multilayer soft magnetic film 3. A silicon wafer coated with photoresist is placed under the mask for vacuum contact exposure and then developed. Subsequently, the soft magnetic material film 6 and the high-resistance material film 5 are alternately sputtered by sputtering. Finally, the residual photoresist on the substrate 4 is stripped off to obtain the pattern of the multilayer soft magnetic film 3.

[0052] c. Spin-coating and pre-imidizing polyimide as the insulating layer between the underlying multilayer soft magnetic film 3 and the inductor 2. Specifically, in some embodiments, a spin coater is used to spin-coat PI-2610 in small amounts multiple times to achieve the desired thickness and to cover the multilayer soft magnetic film 3. The film is then heated at 130°C for more than 90 seconds to pre-imidize the underlying polyimide dielectric film.

[0053] d. Using a photolithographic stripping method to create a pattern for the inductor coil 2. Specifically, in some embodiments, it is necessary to first create a pattern for the inductor coil 2 using a photolithographic development method, then electroplate the pattern for the inductor coil 2 under a photoresist mask, then magnetron sputter a plating seed layer onto the substrate, followed by electroplating thickening, and finally stripping off the remaining photoresist to obtain the pattern for the inductor coil 2.

[0054] e. Spin-coating and pre-imidizing polyimide as the insulating layer between the upper striped soft magnetic film 1 and the inductor 2. Specifically, in some embodiments, a spin coater is used to spin-coat PI-2610 in small amounts multiple times to fill the gaps in the inductor 2 and meet the required thickness. The film is then heated at 130°C for at least 90 seconds to pre-imidize the upper and lower polyimide dielectric films.

[0055] f. Etching the through-hole pattern of the magnetic pillar 9 on the polyimide and curing the polyimide. Specifically, in some embodiments, aluminum is used as a mask, a through-hole pattern is formed by photolithography, and then the through-hole pattern is etched on the polyimide by reactive ion etching.

[0056] g. Filling the through-holes of the magnetic pillars 9 with the soft magnetic material fine lines 7 by electroplating. Specifically, in some embodiments, the exposed underlying magnetic material fine lines 7 are used as a seed layer, an electrolyte is prepared based on the composition of the soft magnetic material fine lines 7, and an electroplating process is performed to fill the through-holes.

[0057] h. The upper striped soft magnetic film 1 is produced by photolithographic stripping; specifically, in some embodiments, a striped mask is used to pattern the fine lines 7 of the soft magnetic material, a silicon wafer coated with photoresist is placed under the mask for vacuum contact exposure and then developed, and then the fine lines 7 of the soft magnetic material are sputtered by sputtering. Finally, the photoresist on the substrate is stripped off to obtain the striped soft magnetic film 1. After the planar inductor based on the striped soft magnetic film is produced, a layer of high-resistance material film is sputtered on the surface of the entire device by a magnetron sputtering process to fill the stripe gaps while insulating and protecting the entire planar inductor.

[0058] Example

[0059] The silicon wafer surface was cleaned using a standard RCA cleaning process and dried with nitrogen. Next, AZ4620 photoresist was spin-coated at 3000 rpm for 20 seconds and baked at 100°C for 120 seconds. The photoresist-coated silicon wafer was allowed to cool to room temperature and then placed under the mask of the underlying magnetic film for vacuum contact exposure for 5 seconds. Development was then performed using AZ4620 developer for 45 seconds, followed by rinsing with ultrapure water and drying. Two rectangular masks were then formed on the silicon wafer surface.

[0060] Use magnetron sputtering to make the lower multilayer soft magnetic film 3. Place the silicon wafer on the substrate 4 of the magnetron sputtering equipment, half-close the exhaust valve, open the inlet valve and fill with argon until the vacuum reaches 10mTorr. Turn on the DC power supply connected to the target gun, 100W / π (38cm) 2 Sputtering (Fe 65 Co 35 ) 97 B3 50min, forming a metal film with a thickness of about 400nm; turn on the RF power supply connected to another target gun, 100W / π (38cm) 2 Sputter SiO2 for 50 minutes to form a high-resistance material with a thickness of about 100nm. Sputter alternately for 4 times. Place the silicon wafer in a container filled with acetone and heat it in a water bath to remove the residual photoresist on the silicon wafer and the (Fe 65 Co 35 ) 97 B3 and SiO2 are removed to obtain the lower multilayer soft magnetic film 3. PI260 is spin-coated at 5000 rpm for 4 times and pre-imidized polyimide is kept at 130°C for 90s as the dielectric between the lower multilayer soft magnetic film 3 and the inductor coil 2.

[0061] The mask of the inductor coil 2 is made by the above-mentioned photolithography process. The copper inductor coil is made by magnetron sputtering. The silicon wafer is placed on the substrate 4 of the magnetron sputtering equipment. The exhaust valve is half closed, and the inlet valve is opened to fill with argon gas until the vacuum reaches 10mTorr. The DC power supply connected to the target gun is turned on, 100W / π (38cm). 2 Cu was sputtered for 200 minutes to form a metal film approximately 2μm thick. The silicon wafer was placed in a water bath filled with acetone and heated to remove the remaining photoresist and the Cu on top, forming the inductor coil layer. PI260 was spin-coated at 5000 rpm for four coats and then held at 130°C for 30 seconds. Pre-imidized polyimide served as the dielectric between the inductor coil 2 and the upper striped soft magnetic film 1.

[0062] A 200nm thick aluminum film was deposited by magnetron sputtering. A through-hole pattern was then created on the aluminum film using the aforementioned photolithographic lift-off process, serving as a magnetic through-hole mask. The through-hole pattern was then etched into the polyimide using reactive ion etching. The sample was then stored at 350°C for 30 minutes to cure the polyimide.

[0063] An electrolyte was prepared with ferrous sulfate, cobalt sulfate, sodium chloride, boric acid, saccharin, and stabilizer in a ratio of 1400:1500:375:1250:50:1. The underlying magnetic material exposed by etching the polyimide thickness was used as a seed layer. FeCo was electroplated at a current of 0.2 A for 40 minutes to fill the through-holes of the magnetic pillars 9.

[0064] Then, the upper layer (Fe 65 Co 35 ) 97 The pattern of B3 striped soft magnetic film 1 is finally used to produce a planar inductor based on the striped soft magnetic film. Using the above-mentioned SiO2 sputtering process, a layer of silicon dioxide film is sputtered on the surface of the entire device to fill the stripe gaps while insulating and protecting the entire planar inductor.

[0065] Through HFSS simulation, the inductance density and quality factor of the inductor at different frequencies are shown in Table 1.

[0066] Frequency (GHz) <![CDATA[Inductance density (nH / mm 2 )]]> Quality factor 1 157 13 2 148 15 3 145 11

[0067] The magnetic film portion of the planar inductor has a saturation magnetic induction intensity of 1000-1300 GS and a resistivity of 8000-12000 μΩ·cm. The anisotropy field of the striped soft magnetic film can reach 350-650 Oe.

[0068] From the above description of the specific exemplary embodiments of the present invention, it can be seen that the planar inductor based on the striped soft magnetic film of the present invention has a high quality factor and inductance density at high frequencies (the inductance density of the planar coil air-core inductor is less than 10nH / mm 2 ).

Claims

1. A planar inductor based on a striped soft magnetic film, arranged on a substrate (4) having an inductor coil (2), characterized in that: The upper and lower sides of the inductor coil (2) are coated with a striped soft magnetic film (1) and a multilayer soft magnetic film (3); the striped soft magnetic film (1) on the upper side of the inductor coil (2) is a striped structure formed by soft magnetic material fine lines (7) and high resistance material fine lines (8) at intervals, and the multilayer soft magnetic film (3) on the lower side of the inductor coil (2) is composed of multiple groups of soft magnetic films in close contact, wherein each group of soft magnetic films (3) is composed of an upper soft magnetic material film (6) and a lower high resistance material film (5); the stripe direction of the upper striped soft magnetic film (1) is perpendicular to the direction of the coated inductor coil (2) and parallel to the direction of the magnetic field lines; The stripe-type soft magnetic film (1) and the multilayer soft magnetic film (3) are connected via magnetic columns (9); The striped soft magnetic film (1) and the multilayer soft magnetic film (3) are insulated from the inductor coil (2) by dielectrics, wherein the dielectric is polyimide; The width of the soft magnetic fine lines (7) in the striped soft magnetic film (1) is 10-60 μm, the gap between the stripes is 10-60 μm, and the length of the striped soft magnetic film (1) covering the inductor coil (2) is 100-400 μm; The multilayer soft magnetic film (3) is an upper layer of soft magnetic material film (6) and a lower layer of high resistance material film (5) alternately stacked, the thickness of the soft magnetic material film (6) is 0.1-1 μm, the thickness of the high resistance material film (5) is 0.1-1 μm, and the thickness of the multilayer soft magnetic film (3) is 1-2 μm.

2. The planar inductor based on a striped soft magnetic film according to claim 1, characterized in that: The line width of the inductor coil (2) is 5-40 μm, the spacing between the inductor coils (2) is 10-60 μm, and the total area of ​​the inductor coil (2) is 0.5-5 mm 2 The inductor coil (2) is made of a metal material with good electrical conductivity selected from gold, silver, copper and titanium.

3. The planar inductor based on a striped soft magnetic film according to claim 1, characterized in that: The material of the substrate (4) is glass, quartz high-resistance silicon, or flexible organic polymers such as polyphenylene vinylene and polydimethylsiloxane.

4. The planar inductor based on a striped soft magnetic film according to claim 1, characterized in that: The materials of the soft magnetic material fine lines and the soft magnetic material film are selected from silicon steel, ferrite, polycrystalline soft magnetic material, amorphous soft magnetic material or nanocrystalline soft magnetic material.

5. The planar inductor based on a striped soft magnetic film according to claim 4, characterized in that: The materials of the soft magnetic material fine lines and the soft magnetic material film are FeCoB polycrystalline soft magnetic material.

6. The planar inductor based on a striped soft magnetic film according to claim 1, characterized in that: The material of the high-resistance material fine lines and the high-resistance material film is one of zinc oxide, boron oxide, aluminum oxide, silicon nitride, boron nitride and silicon dioxide.

7. The planar inductor based on a striped soft magnetic film according to claim 1, characterized in that: The proportion of the soft magnetic material in the stripe-type magnetic film (1) is 10 vol% to 80 vol%.

8. The planar inductor based on a striped soft magnetic film according to claim 7, characterized in that: The proportion of the soft magnetic material in the stripe-type magnetic film (1) is 50 vol% to 80 vol%.

9. The planar inductor based on a striped soft magnetic film according to claim 8, characterized in that: The inductance density of this planar inductor is 145~157nH / mm at a frequency of 1~3GHz. 2 , the quality factor is 11 to 15; The magnetic film portion of the planar inductor has a saturation magnetic induction intensity of 1000-1300 GS and a resistivity of 8000-12000 μΩ·cm, wherein the anisotropy field of the striped soft magnetic film is 350-650 Oe.

10. A method for preparing a planar inductor based on a stripe-type soft magnetic film according to claim 1, characterized in that: The method is prepared by combining magnetron sputtering technology with micro-nano processing technology, and includes the following steps: a. Cleaning the substrate (4) to remove impurities on its surface; b. The lower layer of the multilayer soft magnetic film (3) is produced by photolithographic stripping. c. Spin-coated and pre-imidized polyimide as an insulating layer between the underlying multilayer soft magnetic film (3) and the inductor coil (2); d. Using a photolithographic stripping method to produce a pattern of the inductor coil (2); e. Spin-coated and pre-imidized polyimide as an insulating layer between the upper stripe-type soft magnetic film (1) and the inductor coil (2); f. Etching a through-hole pattern of a magnetic column (9) on a polyimide and curing the polyimide; g. The through-holes of the magnetic pillars (9) are filled with a soft magnetic material by electroplating; h. Using a photolithographic striping method to produce an upper stripe-type soft magnetic film (1); after the planar inductor based on the stripe-type soft magnetic film is produced, a layer of high-resistance material film is sputtered on the surface of the entire device using a magnetron sputtering process to fill the stripe gaps while providing insulation protection for the entire planar inductor.

11. A use of the planar inductor based on the stripe-type soft magnetic film as claimed in claim 1, characterized in that: Used to prepare high-frequency integrated electronic circuits or flexible electronic circuits.

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