Semiconductor package injection mold, injection molding device, and semiconductor package injection molding method

Abstract

The present application relates to chip packaging technical field, especially a kind of semiconductor package injection mold, semiconductor package injection device and semiconductor package injection method, the semiconductor package injection mold includes bottom die and top die, the upper surface of the bottom die is used to be consistent with the lower surface of the substrate to be formed semiconductor package structure, the top die is matched with the bottom die, the top die has plastic package cavity, the plastic package cavity is towards substrate upper surface and is used to accommodate the plastic encapsulation layer formed on the substrate upper surface, the bottom die has through hole corresponding to the position of substrate and penetrating the bottom die, the through hole is used to be connected with the pressure source of external connection.The present application balances the pressure on the upper surface of substrate during transfer molding when forming plastic encapsulation layer by using the pressure on the lower surface of substrate generated by pressure source, so that the stress received by substrate is reduced, and substrate will not be warped.

Description

Technical Field

[0001] This invention relates to the field of chip packaging technology, and in particular to a semiconductor packaging injection mold, a semiconductor packaging injection apparatus, and a semiconductor packaging injection method. Background Technology

[0002] Semiconductor packaging involves mounting microelectronic chips onto a molding compound substrate and encapsulating them using molding materials. One method is the molded matrix array package (MMAP), which securely encapsulates the chip onto the molding compound substrate.

[0003] The two surfaces of the molding compound substrate to be injection molded are not perfectly flat. The upper surface of the molding compound substrate encapsulates microelectronic chips or other electrical components, while the lower surface of the molding compound substrate near the bottom mold has solder joints or surface-mount devices, thus forming grooves or cavities on the lower surface of the molding compound substrate. However, when using the MMAP method for encapsulation, a certain high pressure is generated on the upper surface of the molding compound substrate during injection molding and transfer molding. The pressure during the final transfer molding holding stage can even exceed 6 MPa.

[0004] When the upper surface of the molding substrate is subjected to downward high pressure, and the lower surface of the molding substrate has grooves or cavities, the molding substrate will warp, which can easily cause damage or detachment of the electrical contacts of microelectronic chips or some other electrical devices, or even, in severe cases, breakage of the molding substrate or breakage of the microelectronic chip.

[0005] To address the aforementioned issues, existing technologies design different encapsulation molds for different molding compounds (MCCs). These molds feature raised structures at locations corresponding to grooves or cavities on the lower surface of the MCC, eliminating cavities between the mold and the MCC during transfer molding and preventing warping due to stress. However, designing a dedicated mold for each MCC and creating raised structures at specific locations is too costly and extends delivery time. Furthermore, under cost pressures, current mold manufacturing techniques have limited precision, resulting in incomplete fit with the MCC and the presence of cavities. The mold cannot provide perfect support, and the MCC remains subject to stress during injection molding. Summary of the Invention

[0006] In order to overcome the shortcomings of the prior art, the present invention provides a semiconductor packaging injection mold, a semiconductor packaging injection device, and a semiconductor packaging injection method.

[0007] To achieve the above objectives, embodiments of the present invention also provide a semiconductor packaging injection mold, comprising:

[0008] The bottom mold and the top mold are provided. The upper surface of the bottom mold is used to fit against the lower surface of the substrate to be packaged. The top mold cooperates with the bottom mold. The top mold has a molding cavity facing the upper surface of the substrate and is used to accommodate the molding layer formed on the upper surface of the substrate. The bottom mold has a through hole corresponding to the position of the substrate, which is used to connect to an external pressure source.

[0009] Optionally, the lower surface of the substrate has a groove or a protrusion, and the through hole is disposed at the position corresponding to the groove or protrusion.

[0010] Optionally, when the lower surface of the substrate has a protrusion, the size of the through hole is larger than the size of the protrusion.

[0011] Optionally, the number of through holes is multiple, and they are evenly distributed directly below the corresponding substrate.

[0012] Optionally, the upper surface of the bottom mold is a flat surface.

[0013] This invention also provides a semiconductor packaging injection molding apparatus, comprising: a bottom mold, a top mold, a pressure source, and a substrate. The upper surface of the bottom mold is attached to the lower surface of the substrate. The top mold cooperates with the bottom mold. The top mold has a molding cavity facing the upper surface of the substrate and is used to accommodate the molding layer formed on the upper surface of the substrate. The bottom mold has a through hole corresponding to the position of the substrate. The through hole is connected to the pressure source, and the pressure generated by the pressure source on the lower surface of the substrate is used to balance the pressure on the upper surface of the substrate during injection molding.

[0014] Optionally, the lower surface of the substrate has grooves and / or protrusions, and the through holes are provided at least at the positions corresponding to the grooves and / or protrusions.

[0015] Optionally, each groove corresponds to at least one through hole.

[0016] Optionally, when the lower surface of the substrate has a protrusion, the size of the corresponding through hole is larger than the size of the protrusion.

[0017] Optionally, a pressure sensor may be provided in the through hole corresponding to the groove or protrusion or on the lower surface of the substrate.

[0018] Optionally, different through holes in the bottom mold correspond to different pressures, resulting in different pressure distributions.

[0019] Optionally, the pressure corresponding to the same through hole at different times is adjustable.

[0020] Optionally, the pressure source is a pneumatic source or a hydraulic source.

[0021] Optionally, the injection molding process is a transfer molding injection molding process.

[0022] This invention also provides a semiconductor packaging injection molding method for the semiconductor packaging injection molding apparatus, comprising:

[0023] The bottom mold, substrate, and top mold are stacked and clamped together. The upper surface of the bottom mold is in contact with the lower surface of the substrate, and the molding cavity of the top mold faces the upper surface of the substrate and is in contact with the upper surface of the substrate.

[0024] When forming a molding layer on the upper surface of the substrate using a transfer molding process, a pressure source is used to apply pressure to the lower surface of the substrate through the through-hole of the bottom mold. The pressure on the lower surface of the substrate generated by the pressure source balances the pressure on the upper surface of the substrate during injection molding.

[0025] Optionally, when the pressure on the upper surface of the substrate exceeds a preset value during transfer molding, the pressure source is turned on, and pressure is applied to the lower surface of the substrate through the through-hole of the bottom mold using the pressure source.

[0026] Optionally, during the transfer molding process, the pressure required to be applied to the lower surface of the substrate is calculated in real time by detecting the pressure generated on the upper surface of the substrate, and the corresponding pressure is applied to the lower surface of the substrate through the through hole of the bottom mold using a pressure source.

[0027] Optionally, depending on the substrate, different pressures correspond to different through holes in the bottom mold, resulting in different pressure distributions.

[0028] Optionally, the injection molding process is a transfer molding injection molding process.

[0029] In summary, the beneficial effects of the present invention are as follows:

[0030] The bottom mold of the present invention has a through hole at the position corresponding to the substrate. The through hole is connected to an external pressure source. When injection molding is performed, the pressure generated by the pressure source on the lower surface of the substrate is used to balance the pressure on the upper surface of the substrate during injection molding, so that the stress on the substrate is reduced and the substrate will not warp, thus avoiding damage to the electrical properties of the microelectronic chip and the substrate.

[0031] Furthermore, since the air pressure of the external pressure source corresponding to different through holes is adjustable, the pressure balance between the upper and lower surfaces of the substrate can be achieved by adjusting the air pressure corresponding to different through holes for different substrates. This eliminates the need to customize specific bottom molds for different substrates, greatly reducing costs and production time.

[0032] To make the above and other objects, features and advantages of the present invention more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0033] Figure 1 This is a schematic diagram of the semiconductor packaging injection molding apparatus according to the first embodiment of the present invention;

[0034] Figure 2 This is a schematic diagram of the semiconductor packaging injection molding apparatus according to the second embodiment of the present invention;

[0035] Figure 3 This is a schematic diagram of the structure of the semiconductor packaging injection molding apparatus for forming a molding layer according to the second embodiment of the present invention;

[0036] Figure 4 This is a schematic flowchart of a semiconductor packaging injection molding method according to an embodiment of the present invention. Detailed Implementation

[0037] To facilitate understanding by those skilled in the art, the present invention will be further described in detail below with reference to specific embodiments. Numerous specific details (e.g., specific materials, dimensions, and operating parameters) are described in the following description to provide a comprehensive understanding of the invention, and well-known microelectronic design and packaging techniques have not been described in these details to avoid unnecessarily obscuring the invention. Throughout this specification, the term "implementation or embodiment" refers to a specific feature, structure, material, or performance described with that embodiment that is included in at least one embodiment of the invention. Therefore, the phrase "in one embodiment" appearing in various places throughout the specification does not necessarily refer to the same embodiment of the invention. Furthermore, the specific features, structures, materials, or performance may be combined in one or more embodiments in any suitable manner.

[0038] As used herein, the terms "above," "below," "between," and "above" refer to the relative position of one structure or layer with respect to other structures or layers. Similarly, for example, a layer deposited or disposed above or below another layer may be in direct contact with said other layer or may have one or more intermediate layers. Additionally, a layer deposited or disposed between layers may be in direct contact with each layer or may have one or more intermediate layers. Moreover, a layer deposited or disposed between layers may be in direct contact with said layer or may have one or more intermediate layers. Conversely, a first layer or first structure located "above" a second layer or second structure is in contact with the second layer or second structure. Furthermore, assuming that deposition, modification, and film removal operations are performed relative to an initial substrate, a relative position of one structure with respect to another is provided, regardless of the absolute orientation of the substrate.

[0039] Please refer to Figure 2 and Figure 3 The present invention first provides a semiconductor packaging injection molding apparatus, comprising:

[0040] The system comprises a bottom mold 10, a top mold 40, a pressure source 50, and a substrate 20. The top mold cooperates with the bottom mold to clamp and fix the bottom mold 10, substrate 20, and top mold 40 together. The upper surface of the bottom mold 10 is in contact with the lower surface of the substrate 20. The top mold 40 has a molding cavity 41 for accommodating the molding layer 30 formed on the upper surface of the substrate 20. The molding cavity 41 of the top mold 40 faces the upper surface of the substrate 20, and the top mold 40 is in contact with the upper surface of the substrate 20. The bottom mold 10 has a through hole 11 corresponding to the position of the substrate 20, which is connected to the pressure source 50. The pressure generated by the pressure source 50 on the lower surface of the substrate 20 is used to balance the pressure on the upper surface of the substrate 20 during injection molding.

[0041] In this embodiment, the upper surface of the substrate 20 to which the semiconductor package structure is to be formed has a microelectronic chip 25. The microelectronic chip 25 is attached to the upper surface of the substrate 20 by wire bonding or flip chip packaging processes to achieve electrical interconnection between the microelectronic chip and the substrate, and the plastic encapsulation layer 30 is used to isolate the microelectronic chip from external moisture and air.

[0042] The microelectronic chip 25 can be a memory chip, an application-specific integrated circuit (ASIC) chip, a sensor chip, a microprocessor chip, a microelectromechanical system (MEMS) chip, or other semiconductor package structures that encapsulate chips; no particular limitation is made here.

[0043] In other embodiments, in addition to encapsulating one or more microelectronic chips, the upper surface of the substrate may also have discrete devices or other structures, such as surface mount resistors or surface mount capacitors, etc., and the molding compound encapsulates the microelectronic chips and discrete devices in the same molding compound.

[0044] In one embodiment, please refer to Figure 1 Since solder joints or certain surface mount devices are provided near the lower surface of the packaging mold, the lower surface of the substrate 20 has a groove 21, and the lower surface of the substrate 20 is not flat.

[0045] In another embodiment, please refer to Figure 2 Since solder joints or certain surface mount devices are provided near the lower surface of the packaging mold, the lower surface of the substrate 20 is uneven, having not only grooves 21 but also protrusions 22.

[0046] In another embodiment, the lower surface of the substrate may also have only the protrusion.

[0047] In this embodiment, the upper surface of the bottom mold 10 is attached to the lower surface of the substrate 20. The upper surface of the bottom mold 10 is a flat surface, while the lower surface of the substrate 20 is an uneven surface with protrusions or depressions. In the prior art, to prevent warping of the substrate due to stress, different bottom molds need to be designed for different substrates. The bottom mold has protrusions or depressions at positions corresponding to grooves or cavities on the lower surface of the substrate. This results in high production costs for the bottom mold, extends the packaging delivery time, and makes it difficult to achieve high-precision fitting. However, in this embodiment of the invention, pressure is generated on the lower surface of the substrate using through holes and a pressure source, and this pressure is used to balance the pressure of the injection molding material on the upper surface of the substrate during injection molding transfer. Therefore, a bottom mold is not needed to achieve perfect support for the substrate. The bottom mold does not need to be customized with corresponding protrusions or depressions for the grooves or protrusions on the lower surface of the substrate. One bottom mold can be used for multiple different substrates, reducing the cost of molding and shortening the packaging delivery time.

[0048] In other embodiments, the upper surface of the bottom mold 10 may also be a surface with a certain uneven structure. However, since the uneven structure does not need to be designed according to different substrates, the processing accuracy corresponding to the position and height of the bottom mold unevenness is not very limited by the position and height of the corresponding protrusion or depression of the substrate. Therefore, the manufacturing cost of the bottom mold is reduced and the delivery time of the package is shortened.

[0049] Furthermore, by using the semiconductor packaging injection molding apparatus of this invention for semiconductor packaging, the substrate of this invention can be arbitrarily designed according to the type of microelectronic chip being packaged and the substrate. Grooves or protrusions can be formed on the lower surface of the substrate as needed, without having to consider the impact on the bottom mold, and without worrying about the substrate warping due to stress caused by the grooves or protrusions on the lower surface of the substrate, which greatly reduces the design difficulty of the substrate.

[0050] The bottom mold 10 has a through hole 11 at the position corresponding to the substrate 20. The position of the through hole can be customized according to the groove or protrusion on the lower surface of the substrate, and the through hole is located at the position corresponding to the groove or protrusion.

[0051] Please refer to Figure 1 The through hole 11 is located at the position corresponding to the groove 21 and at other positions in other areas. Please refer to... Figure 2 The through hole 11 is located at the position corresponding to the groove 21, the position corresponding to the protrusion 22, and other areas.

[0052] In other embodiments, the through hole can also be located in a position without grooves or protrusions, and the air pressure of the through hole at different positions can be adjusted by a pressure source connected to the through hole.

[0053] In this embodiment, even though the position of the through hole of the bottom mold 10 is customized according to the groove and protrusion positions of different substrates, since the upper surface of the bottom mold is a flat surface, there is no need to consider the manufacturing accuracy of the protrusion or recess structure on the upper surface of the bottom mold, and the cost of customizing the bottom mold is also low.

[0054] When the lower surface of the substrate has a protrusion 22, the size of the through hole 11 at the corresponding position of the protrusion 22 is larger than the size of the protrusion 22, so that the through hole 11 can completely accommodate the protrusion 22, and the substrate and the bottom mold are completely fitted during injection molding. Furthermore, because the size of the through hole 11 at the corresponding position of the protrusion 22 is larger than the size of other through holes, the substrate at the position of the protrusion 22 is more susceptible to warping stress. Therefore, by adjusting the air pressure of the through hole 11 at the corresponding position of the protrusion 22, the air pressure of the through hole 11 at the corresponding position of the protrusion 22 is greater than the air pressure of through holes 11 at other positions.

[0055] In this embodiment, there are multiple through holes, all of which are distributed directly below the corresponding substrate.

[0056] In this embodiment, the bottom mold determines the position of the through hole 11 according to the specific design of the substrate. The through hole 11 is set at the position corresponding to the groove 21 and the position corresponding to the protrusion 22, and the remaining areas are evenly arranged or arranged in a layout with denser inside and sparser outside.

[0057] In other embodiments, the through holes can also be uniformly arranged in the area directly below the substrate, and the air pressure corresponding to each through hole can be adjusted by the external pressure source 50 corresponding to the through hole.

[0058] In this embodiment, an external pressure source 50 is connected to the through hole 11 of the bottom mold 10. The air pressure generated by the pressure source 50 is used to apply pressure to the lower surface of the substrate 20 to balance the pressure on the upper surface of the substrate during transfer molding.

[0059] In this embodiment, the pressure source can be a pneumatic source, such as a pneumatic pump. In other embodiments, the pressure source can also be a hydraulic source, using liquid to apply pressure to the through-hole.

[0060] In one embodiment, each through hole of the bottom mold is connected to a pneumatic control valve and then to a pressure source. The pneumatic control valve controls the air pressure of each through hole, so that the air pressure corresponding to the through holes at different positions of the bottom mold is different, and the air pressure corresponding to the through holes at different times can also be different. This allows for flexible adjustment of the pressure applied to the lower surface of the substrate, enabling a single bottom mold to be suitable for different substrates.

[0061] In this embodiment, since the positions and sizes of different through holes in the bottom mold vary depending on the substrate, the air pressure corresponding to the through holes at different positions is different, thus forming different pressure distributions and more accurately balancing the pressure on the upper and lower surfaces of the substrate. Because the size of the through hole 11 corresponding to the protrusion 22 is larger than the size of other through holes, the through hole 11 at the position corresponding to the protrusion 22 forms a cavity, making the substrate 20 at the corresponding position more susceptible to stress. Therefore, the air pressure of the through hole 11 corresponding to the protrusion 22 is greater than the air pressure of the through holes 11 at other positions.

[0062] In other embodiments, the multiple through holes of the bottom mold can be connected to a pneumatic control valve and then connected to a pressure source. The pneumatic control valve can be used to control the air pressure of the multiple through holes, thereby controlling the pressure applied to the lower surface of the substrate.

[0063] In other embodiments, all the through holes of the bottom mold can be directly connected to the same pressure source, so that the air pressure changes corresponding to all the through holes are consistent. The pressure generated by the pressure source as a whole on the lower surface of the substrate can be used to balance the pressure on the upper surface of the substrate during injection molding, which can also effectively reduce the adverse effects caused by the depression or protrusion of the lower surface of the substrate during injection molding.

[0064] In other embodiments, a pressure sensor may also be provided in the through-hole corresponding to the groove or protrusion or on the lower surface of the substrate. Since the through-hole corresponding to the groove or protrusion is relatively large, it is convenient to accommodate the pressure sensor. Moreover, the position corresponding to the groove or protrusion is more prone to warping, requiring more accurate pressure detection. This drives the pressure source to apply more precise pressure to the corresponding through-hole. Therefore, a pressure sensor may be provided at the position of the through-hole corresponding to the groove or protrusion, or on the lower surface of the substrate corresponding to the groove or protrusion.

[0065] In this embodiment, a molded matrix array package (MMAP) method is used for encapsulation. An encapsulation layer is formed on the upper surface of the substrate using injection molding transfer molding. The material of the encapsulation layer can be any suitable encapsulation material, such as a material using epoxy resin and amine or phenolic curing agents. The encapsulation material may also contain fillers, such as ceramics or silicon dioxide. Since the pressure in the final transfer molding holding stage of the transfer molding process exceeds 6 MPa, the semiconductor packaging injection molding apparatus of this embodiment can effectively reduce the stress on the substrate and significantly lower packaging costs.

[0066] In other embodiments, although other injection molding processes exert relatively less pressure on the substrate, the semiconductor packaging injection molding apparatus of the present invention is also suitable for reducing the stress on the substrate.

[0067] This invention also provides a semiconductor packaging injection mold, please refer to... Figure 2 or Figure 3 ,include:

[0068] The bottom mold 10 and the top mold 40 are provided. The upper surface of the bottom mold 10 is used to fit against the lower surface of the substrate 20. The top mold 40 cooperates with the bottom mold 10. The top mold 40 has a molding cavity 41 facing the upper surface of the substrate 20 and used to accommodate the molding layer formed on the upper surface of the substrate 20. The bottom mold 10 has a through hole 11 corresponding to the position of the substrate, which is used to connect to an external pressure source.

[0069] In this embodiment, the molding cavity of the top mold 40 defines the shape and size of the molding layer. When the bottom mold 10 and the top mold 40 are clamped and fixed, a downward pressure is generated on the upper surface of the substrate during the injection molding process to form the molding layer.

[0070] Correspondingly, since the bottom mold 10 has a through hole 11 at the position corresponding to the substrate 20, the through hole 11 is used to connect to an external pressure source. The pressure on the lower surface of the substrate generated by the pressure source will balance the pressure of the molding material on the upper surface of the substrate during the transfer molding process, so that the substrate will not be subjected to warping stress or the corresponding stress will be reduced during injection molding. The substrate will not warp or the degree of warping will be greatly reduced, avoiding damage or detachment of the electrical contacts of the microelectronic chip, substrate or some other electrical devices.

[0071] This invention also provides a semiconductor packaging injection molding method using the above-described semiconductor packaging injection molding apparatus, comprising:

[0072] Step S10: The bottom mold, substrate, and top mold are stacked and clamped together. The upper surface of the bottom mold is in contact with the lower surface of the substrate, and the molding cavity of the top mold faces the upper surface of the substrate and is in contact with the upper surface of the substrate.

[0073] In step S20, when forming a molding layer on the upper surface of the substrate using a transfer molding process, a pressure source is used to apply pressure to the lower surface of the substrate through the through-hole of the bottom mold. The pressure on the lower surface of the substrate generated by the pressure source balances the pressure on the upper surface of the substrate during injection molding.

[0074] In this embodiment, the molded matrix array package (MMAP) method is used for microelectronic chip packaging. In other embodiments, the stacked-die-chip-scale packages (SCSP) method or other methods can also be used for microelectronic chip packaging.

[0075] In this embodiment, the above-mentioned semiconductor packaging injection molding apparatus is used to form a molding layer using injection transfer molding process. Since pressure is generated on the upper surface of the substrate during transfer molding, a pressure source is used to apply air pressure to the lower surface of the substrate through the through hole of the bottom mold. The pressure on the lower surface of the substrate generated by the pressure source is controlled to balance the pressure on the upper surface of the substrate during transfer molding.

[0076] In one embodiment, when the pressure on the upper surface of the substrate exceeds a preset value, such as 6 MPa, during transfer molding, the pressure source is turned on, and pressure is applied to the lower surface of the substrate through the through hole of the bottom mold, so that the pressure on the lower surface of the substrate is balanced with the pressure on the upper surface of the substrate during transfer molding.

[0077] In another embodiment, during the transfer molding process, the pressure generated on the upper surface of the substrate is detected in real time, and the corresponding pressure to be applied to the lower surface of the substrate is calculated in real time. The pressure source is used to apply the corresponding pressure to the lower surface of the substrate through the through hole of the bottom mold, so that the pressure difference between the upper and lower surfaces of the substrate is not large during the entire transfer molding process, thereby ensuring that the substrate does not warp during the entire transfer molding process.

[0078] In another embodiment, each through-hole applies the same air pressure to the lower surface of the substrate.

[0079] In other embodiments, the pressure generated by different through holes can be selectively controlled so that the pressure from the pressure source on different positions on the lower surface of the substrate is different, thereby more accurately offsetting the pressure on the upper surface of the substrate during transfer molding, thus effectively alleviating the degree of substrate warping.

[0080] In the later stages of transfer molding, when the pressure on the upper surface of the substrate decreases, the pressure applied to the lower surface of the substrate by the pressure source should be reduced or canceled accordingly to prevent the substrate from warping upwards.

[0081] In this embodiment, the injection molding process is a transfer molding injection molding process. In other embodiments, other injection molding processes may also be applied.

[0082] The above description is merely a preferred embodiment of the present invention. The scope of protection of the present invention is not limited to the above embodiments. All technical solutions falling within the scope of the present invention's concept are within the scope of protection of the present invention. It should be noted that for those skilled in the art, any improvements and modifications made without departing from the principles of the present invention should also be considered within the scope of protection of the present invention.

Claims

1. A semiconductor packaging injection mold, characterized in that, include: The bottom mold and top mold are provided. The upper surface of the bottom mold is used to fit against the lower surface of the substrate to be packaged. The top mold cooperates with the bottom mold. The top mold has a molding cavity facing the upper surface of the substrate and is used to accommodate the molding layer formed on the upper surface of the substrate. The lower surface of the substrate has a groove or a protrusion. The bottom mold has a through hole corresponding to the groove or protrusion of the substrate. The through hole is used to connect to an external pressure source. The pressure on the lower surface of the substrate is generated by the through hole and the pressure source to balance the pressure of the injection molding material on the upper surface of the substrate during injection molding.

2. The semiconductor packaging injection mold according to claim 1, characterized in that, When the lower surface of the substrate has a protrusion, the size of the through hole is larger than the size of the protrusion.

3. The semiconductor packaging injection mold according to claim 1, characterized in that, The number of through holes is multiple, and they are evenly distributed directly below the corresponding substrate.

4. The semiconductor packaging injection mold according to claim 1, characterized in that, The upper surface of the bottom mold is a flat surface.

5. A semiconductor packaging injection molding apparatus, characterized in that, include: The system comprises a bottom mold, a top mold, a pressure source, and a substrate. The upper surface of the bottom mold is fitted to the lower surface of the substrate. The top mold mates with the bottom mold. The top mold has a molding cavity facing the upper surface of the substrate and is used to accommodate the molding layer formed on the upper surface of the substrate. The lower surface of the substrate has a groove or a protrusion. The bottom mold has a through hole corresponding to the groove or protrusion of the substrate. The through hole is connected to the pressure source. The pressure generated by the pressure source on the lower surface of the substrate is used to balance the pressure on the upper surface of the substrate during injection molding. The pressure generated by the through hole and the pressure source on the lower surface of the substrate is used to balance the pressure of the injection molding material on the upper surface of the substrate during injection molding.

6. The semiconductor packaging injection molding apparatus according to claim 5, characterized in that, The lower surface of the substrate has a groove or a protrusion, and the through hole is provided at least at the position corresponding to the groove or protrusion.

7. The semiconductor packaging injection molding apparatus according to claim 6, characterized in that, Each groove corresponds to at least one through hole.

8. The semiconductor packaging injection molding apparatus according to claim 6, characterized in that, When the lower surface of the substrate has a protrusion, the size of the corresponding through hole is larger than the size of the protrusion.

9. The semiconductor packaging injection molding apparatus according to claim 6, characterized in that, A pressure sensor is provided in the corresponding groove or protrusion through hole or on the lower surface of the substrate.

10. The semiconductor packaging injection molding apparatus according to claim 5, characterized in that, Different through holes in the bottom mold correspond to different pressures, resulting in different pressure distributions.

11. The semiconductor packaging injection molding apparatus according to claim 5, characterized in that, The pressure corresponding to the same through hole at different times is adjustable.

12. The semiconductor packaging injection molding apparatus according to claim 5, characterized in that, The pressure source is either a pneumatic or hydraulic source.

13. The semiconductor packaging injection molding apparatus according to claim 5, characterized in that, The injection molding process is a transfer molding injection molding process.

14. A semiconductor packaging injection molding method using the semiconductor packaging injection molding apparatus as described in claim 5, characterized in that, include: The bottom mold, substrate, and top mold are stacked and clamped together. The upper surface of the bottom mold is in contact with the lower surface of the substrate, and the molding cavity of the top mold faces the upper surface of the substrate and is in contact with the upper surface of the substrate. When forming a molding layer on the upper surface of the substrate using a transfer molding process, a pressure source is used to apply pressure to the lower surface of the substrate through a through hole in the bottom mold. The pressure on the lower surface of the substrate generated by the pressure source balances the pressure on the upper surface of the substrate during injection molding. The pressure on the lower surface of the substrate is generated by the through hole and the pressure source to balance the pressure of the injection molding material on the upper surface of the substrate during injection molding.

15. The semiconductor packaging injection molding method according to claim 14, characterized in that, When the pressure on the upper surface of the substrate exceeds the preset value during transfer molding, the pressure source is turned on, and pressure is applied to the lower surface of the substrate through the through hole of the bottom mold.

16. The semiconductor packaging injection molding method according to claim 14, characterized in that, During the transfer molding process, the pressure generated on the upper surface of the substrate is detected and the corresponding pressure to be applied to the lower surface of the substrate is calculated in real time. The pressure source is then used to apply the corresponding pressure to the lower surface of the substrate through the through-hole of the bottom mold.

17. The semiconductor packaging injection molding method according to claim 14, characterized in that, Depending on the substrate, the pressure corresponding to different through holes in the bottom mold is different, resulting in different pressure distributions.

18. The semiconductor packaging injection molding method according to claim 14, characterized in that, The injection molding process is a transfer molding injection molding process.

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