Protective switch for an ion gun

Abstract

A protective switch for an ion gun, relating to the field of etching equipment, is disclosed. A guide plate and a base plate are arranged along the outer side of the emission port. Several diversion channels are provided in the middle of the guide plate, and corresponding reaction switches are provided for each diversion channel. The guide plate and base plate surround the outer side of the emission port to achieve concentrated emission of ion waves from the emission port. This invention further adds reaction switches. Since the reaction switches correspond to the emission channels, the bombardment time element of the ion source for each or each group of emission channels can be further edited and controlled. This allows the etching reaction within the same etching chamber to simultaneously accommodate different reaction time periods, improving the equipment's production efficiency.

Description

Technical Field

[0001] This invention relates to the field of etching equipment, and more specifically to a protective switch for an ion gun. Background Technology

[0002] Conductor manufacturing is a planar manufacturing process that combines photolithography, etching, deposition, and ion implantation. It requires the formation of numerous complex devices of various types on a single substrate and their interconnection to achieve complete electronic functionality. Deviations in any step of the process can cause circuit performance parameters to deviate from design values. Currently, as the feature size of very large-scale integrated circuits continues to shrink and integration density continues to increase, higher demands are placed on the control of each process step and the accuracy of the process results.

[0003] Plasma etching is widely used in semiconductor manufacturing due to its excellent directionality. The general process of plasma etching is as follows: a reactive gas is introduced into the etching chamber. The reactive gas is typically a fluorine-containing gas, such as CF4, CHF3, C2F6, CH2F2, or a combination of SF6. An radio frequency source provides energy to dissociate the reactive gas into plasma. Plasma is an ionized gaseous substance composed of atoms, positive and negative particles, which aggregate to form a plasma sheath. An electric field or bias voltage is applied to the etching chamber; typically, a periodic bias voltage is applied to adjust the potential difference between the plasma and the semiconductor substrate. The difference between the plasma potential and the potential of the semiconductor substrate surface determines the potential drop of the sheath. Under the influence of the electric field, the plasma is accelerated towards the semiconductor substrate, bombarding the surface of the material to be etched. Some plasma ions are adsorbed on the surface of the material and react chemically with it to form reaction byproducts. These byproducts detach from the surface of the material and diffuse into the etching chamber.

[0004] Existing etching equipment includes an ion gun emission port structure. This structure typically involves several pre-splitting ion waves entering the emission port below it and then etching in the reaction chamber above it. However, the ion waves passing through the emission port often exhibit diffusion, making the equipment outside the emission port susceptible to corrosion by the diffused ion wave energy, resulting in unnecessary equipment damage. Furthermore, the emission port structure is often small, and the corrosion-resistant materials used are expensive. Therefore, there is an urgent need for further upgrades and modifications to the area around the emission port. Summary of the Invention

[0005] The present invention aims to overcome at least one of the shortcomings of the prior art and provide a protective switch for an ion gun to solve the problem of loss caused by the corrosion of the emission port by diffused ion waves.

[0006] The technical solution adopted by the present invention is a protective switch for an ion gun. The protective switch is installed on the emission port of the ion gun. A guide plate and a base plate are provided along the outside of the emission port. Several diversion channels are provided in the middle of the guide plate. A reaction switch is provided with a corresponding diversion channel. The guide plate and the base plate surround the outside of the emission port to realize the concentrated emission of ion waves at the emission port. The diameter of the emission through hole is smaller than the diameter of the diversion channel. In this invention, by setting a base plate and a guide plate outside the emission port, the ion waves diffused around the emission port can be absorbed or reflected by the improved base plate, thus not affecting other structures outside the emission port and extending the service life of the equipment. Based on the original emission port and etching chamber, this invention adds a switching structure for the ion source in the etching chamber for bottom-up ion light sources. Specifically, a base plate is set above the emission port. The emission port, typically a square opening in existing devices, has several diversion channels set within this square opening to form a base plate structure, thus performing the first step of diversion and concentration of the ion source. In the etching chamber, a support mechanism corresponding to the chip is generally also provided. At this point, the shunt channel and the chip support position of the support mechanism can be aligned. While performing initial shunt through the base plate, this invention further adds a reaction switch on the base plate. The reaction switch restricts the opening and closing of the shunt channel, thereby controlling the reaction time of the ion source in the etching chamber. This changes the etching time of the wafer and the generation time of by-reactants in the shunt channel. At the same time, since the reaction switch corresponds to the shunt channel, the bombardment time of the ion source for each or each shunt channel can be further edited and controlled. This allows the etching reaction in the same etching chamber to be compatible with different reaction factors, improving the production efficiency of the equipment.

[0007] Preferably, a protective ring is provided along the inner side of the launch port, and there is a gap between the protective ring and the inner side of the launch port.

[0008] Preferably, the protective ring includes an opening, and the guide plate is disposed above the opening, and / or, a base plate is disposed above the guide plate, the base plate is provided with a plurality of emission through holes, and a reaction switch is disposed above the emission through holes.

[0009] Preferably, the reaction switch is a movable baffle or a flip baffle.

[0010] Furthermore, the reaction switch includes a flip door and a rotating shaft, with the rotating shaft positioned between two adjacent rows or columns of diversion channels, and the flip door rotatably connected to the rotating shaft.

[0011] Preferably, the base plate is provided with a launch opening, the inner side of which surrounds the outer side of the launch port, and the length and width of the guide plate are both greater than the launch opening.

[0012] Preferably, the base plate and the guide plate are made of graphite.

[0013] Preferably, several rows of emission through holes are provided along the width direction of the base plate, and two rows of non-overlapping emission through holes form a set of emission through holes.

[0014] Preferably, each column of emission through-holes is equipped with a reaction switch.

[0015] Preferably, a control system is provided, which is connected to the reaction switches so that each reaction switch independently controls the opening or closing of a row of emission vias in a set of reaction vias.

[0016] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0017] 1) This invention achieves isolation from ion wave corrosion outside the emission port by further adding a protective structure or protective switch to the base plate and substrate outside the emission port, thereby increasing the service life of the equipment outside the emission port.

[0018] 2) This invention further adds a reaction switch on the base plate. The reaction switch controls the reaction time of the ion source in the etching chamber by limiting the opening and closing of the shunt channel, thereby changing the etching time of the wafer and the generation time of by-reactants on the shunt channel. At the same time, since the reaction switch corresponds to the shunt channel, the bombardment time of the ion source for each or each shunt channel under control can be further edited and controlled, so that the etching reaction carried out in the same etching chamber can be compatible with different reaction factors, thereby improving the production efficiency of the equipment.

[0019] 3) The reaction switch of the present invention is a flip-plate structure, which makes the two sides of the flip-plate relatively controlled. At the same time, the flip-plate can open one or two columns, with two adjacent columns of emission channels as the flip-plate basic unit. That is, the bombardment time of several columns of shunt channels in each column is the same, while the bombardment time in two adjacent columns of shunt channels can be the same or different, which allows for batch etching of several columns of the same or different chip structures, and the production efficiency can be significantly improved.

[0020] 4) Since the ion source is emitted from bottom to top and the diameter of the hole in the base plate is larger than the diameter of the hole in the graphite protective plate, it is beneficial for the ion source to concentrate its emission on the emission through hole. Combined with the above-mentioned switching structure, the etching accuracy can be improved and the corrosion of the surrounding equipment by the ion source can be reduced. Attached Figure Description

[0021] Figure 1 This is a top view of a protective switch for an ion gun according to the present invention.

[0022] Figure 2 This is a top view of the substrate of a protective switch for an ion gun according to the present invention.

[0023] Figure 3 This is a top view of the shunt plate of a protection switch for an ion gun according to the present invention.

[0024] Figure 4 This is a top view of the base plate of a protective switch for an ion gun according to the present invention.

[0025] Figure 5 This is an exploded structural diagram of a protective switch for an ion gun according to the present invention.

[0026] Figure 6 This is an exploded structural diagram of a protective switch for an ion gun according to the present invention, including a protective ring.

[0027] In the figure, the flow guide plate is 100, the flow diversion channel is 110, the substrate is 200, the emission through hole is 210, the reaction switch is 300, the base plate is 400, and the protective ring is 510. Detailed Implementation

[0028] To facilitate understanding of the present invention, a more complete description will be given below with reference to the accompanying drawings. Preferred embodiments of the invention are shown in the drawings. However, the invention can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a thorough and complete understanding of the disclosure of the invention. For better illustration of the following embodiments, some parts in the drawings may be omitted, enlarged, or reduced, and do not represent the dimensions of actual products; it will be understood by those skilled in the art that some well-known structures and their descriptions may be omitted in the drawings.

[0029] It should be noted that when a component is said to be "fixed to" another component, it can be directly attached to the other component or there may be an intervening component. When a component is said to be "connected to" another component, it can be directly connected to the other component or there may be an intervening component. The terms "vertical," "horizontal," "left," "right," and similar expressions used in this document are for illustrative purposes only.

[0030] Example 1

[0031] like Figure 1 , 5As shown, a protective switch for an ion gun is installed on the emission port of the ion gun. A guide plate 100 and a base plate 400 are provided along the outer side of the emission port. A plurality of diversion channels 200 are provided in the middle of the guide plate 100. A reaction switch 300 is provided for each diversion channel 200. The guide plate 100 and the base plate 400 surround the outer side of the emission port to realize the concentrated emission of ion waves at the emission port. The diameter of the emission through hole 210 is smaller than the diameter of the diversion channel 200. In this invention, by setting a base plate 400 and a guide plate 100 outside the emission port, the ion waves diffused around the emission port can be absorbed or reflected by the improved base plate 400, thus not affecting other structures outside the emission port and extending the service life of the equipment. In this invention, based on the original emission port and etching chamber, a switching structure for the ion source in the etching chamber is added for the bottom-up ion source. Specifically, a base plate 400 is set above the emission port. The emission port, typically a square opening in existing devices, has several diversion channels 200 set in this square opening to form a base plate 400 structure, which performs the first step of diversion and concentration of the ion source. In the etching chamber, a support mechanism corresponding to the chip is generally also provided. At this time, the diversion... The flow channel 200 and the chip support position of the support mechanism can be aligned. While the initial flow is split through the base plate 400, the present invention further adds a reaction switch 300 on the base plate 400. The reaction switch 300 restricts the opening and closing of the flow channel 200, thereby controlling the reaction time of the ion source in the etching chamber, so as to change the etching time of the wafer and the generation time of by-reactants on the flow channel 200. At the same time, since the reaction switch 300 corresponds to the flow channel 200, the bombardment time of the ion source for each or each flow channel 200 can be further edited and controlled, so that the etching reaction in the same etching chamber can be compatible with different reaction factors, improving the production efficiency of the equipment.

[0032] like Figure 6 As shown, preferably, a protective ring 510 is provided along the inner side of the launch port, and the protective ring 510 has a gap with the inner side of the launch port.

[0033] like Figure 2 As shown, preferably, the protective ring 510 includes an opening, and the guide plate is disposed above the opening, and / or, a substrate 200 is disposed above the guide plate 100, the substrate 200 is provided with a plurality of emission through holes 210, and the reaction switch 300 is disposed above the emission through holes 210.

[0034] Preferably, the reaction switch 300 is a movable baffle or a flip baffle.

[0035] Furthermore, the reaction switch 300 includes a flip door and a rotating shaft, with the rotating shaft positioned between two adjacent rows or columns of diversion channels 200, and the flip door rotatably connected to the rotating shaft.

[0036] like Figure 5 As shown, preferably, the base plate 400 is provided with a launch opening, the inner side of which surrounds the outer side of the launch port, and the length and width of the guide plate 100 are both greater than the launch opening.

[0037] Preferably, the base plate 400 and the guide plate 100 are made of graphite.

[0038] like Figure 6 As shown, preferably, several rows of emission through holes 210 are provided along the width direction of the base plate 400, and two rows of non-overlapping emission through holes 210 form a set of emission through holes 210.

[0039] Preferably, each column of emission through-holes 210 is equipped with a reaction switch 300.

[0040] Preferably, a control system is provided, which is connected to the reaction switch 300 so that each reaction switch 300 independently controls the opening or closing of a row of emission vias 210 in a set of reaction vias.

[0041] Specifically, such as Figure 1-6 As shown, there are 8 groups of 16 columns of 32 emission through holes 210 along the width direction of the base plate 100. Two emission through holes 210 are in one column. There are 8 reaction switches to control the emission through holes 210. This figure shows one control state:

[0042] In the first group, the reaction switch is in the flip-on open state, and the emission through-holes 210 in columns 1 and 2 are in the open state;

[0043] In the second group, the reaction switch is in the closed state, the emission through hole 210 in the third column is in the closed state, and the emission through hole 210 in the fourth column is in the open state.

[0044] In the third group, the reaction switch is in the closed state, the emission through hole 210 in the 5th column is in the open state, and the emission through hole 210 in the 6th column is in the closed state.

[0045] In the fourth group, the reaction switch is in the closed state, the emission through hole 210 in the 7th column is in the open state, and the emission through hole 210 in the 8th column is in the closed state.

[0046] In the fifth group, the reaction switch is in the closed state, the emission through hole 210 in the 10th column is in the open state, and the emission through hole 210 in the 9th column is in the closed state.

[0047] In the sixth group, the reaction switch is in the closed state, the emission through hole 210 in column 11 is in the open state, and the emission through hole 210 in column 12 is in the closed state.

[0048] In the seventh group, the reaction switch is in the closed state, the emission through hole 210 in column 14 is in the open state, and the emission through hole 210 in column 13 is in the closed state.

[0049] In the eighth group, the reaction switch is in the closed state, the emission through hole 210 in column 15 is in the open state, and the emission through hole 210 in column 16 is in the closed state.

[0050] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0051] 1) By further adding a protective structure or protective switch to the base plate 400 and the substrate 200 on the outside of the emission port, the present invention achieves isolation from ion wave corrosion on the outside of the emission port and increases the service life of the equipment outside the emission port.

[0052] 2) The present invention further adds a reaction switch 300 on the base plate 400. The reaction switch 300 restricts the opening and closing of the shunt channel 200, thereby controlling the reaction time of the ion source in the etching chamber, so as to change the etching time of the wafer and the generation time of by-reactants on the shunt channel 200. At the same time, since the reaction switch 300 corresponds to the shunt channel 200, the bombardment time of the ion source for each or each shunt channel 200 under control can be further edited and controlled, so that the etching reaction carried out in the same etching chamber can be compatible with different reaction factors, thereby improving the production efficiency of the equipment.

[0053] 3) The reaction switch 300 of the present invention is a flip-plate structure, which makes the two sides of the flip-plate shunt channels 200 relatively controlled. At the same time, the flip-plate can open one or two columns, with two adjacent columns of emission channels as the flip-plate basic unit. That is, the bombardment time of several shunt channels 200 in each column is the same, while the bombardment time in two adjacent columns of shunt channels 200 can be the same or different, which allows for batch etching of several columns of the same or different chip structures, and the production efficiency can be significantly improved.

[0054] 4) Since the ion source is emitted from bottom to top and the diameter of the hole in the base plate 400 is larger than the diameter of the hole in the graphite protective plate, it is beneficial for the ion source to concentrate its emission on the emission through hole 210. Combined with the above-mentioned switching structure, the etching accuracy can be improved and the corrosion of the surrounding equipment by the ion source can be reduced.

[0055] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the technical solution of the present invention, and are not intended to limit the specific implementation of the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the claims of the present invention should be included within the protection scope of the claims of the present invention.

Claims

1. A protective switch for an ion gun, said protective switch being installed on the emission port of the ion gun, characterized in that, A base plate, a guide plate, a substrate, and a reaction switch are arranged sequentially along the outer side of the emission port. The base plate has an emission opening, and the inner side of the emission opening surrounds the outer side of the emission port. The length and width of the guide plate are both greater than the emission opening. Several diversion channels are provided in the middle of the guide plate. The base plate and the guide plate are made of graphite. Several rows of emission through holes are provided along the width direction of the substrate. The reaction switch is located above the emission through holes. The guide plate and the base plate surround the outer side of the emission port to realize the concentrated emission of ion waves at the emission port. The diameter of the emission through holes is smaller than the diameter of the diversion channels. Each column of emission through-holes is equipped with a reaction switch; It is also equipped with a control system, which is connected to the reaction switches so that each reaction switch can independently control the opening or closing of a row of emission through holes.

2. The protective switch for an ion gun according to claim 1, characterized in that, A protective ring is provided along the inner side of the launch port, and there is a gap between the protective ring and the inner side of the launch port.

3. The protective switch for an ion gun according to claim 2, characterized in that, The protective ring includes an opening, and the guide plate is disposed above the opening.

4. The protective switch for an ion gun according to claim 3, characterized in that, The reaction switch is a movable baffle or a flip baffle.

5. The protective switch for an ion gun according to claim 1, characterized in that, The reaction switch includes a flip door and a rotating shaft. The rotating shaft is located between two adjacent rows or columns of diversion channels, and the flip door is rotatably connected to the rotating shaft.

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