Voltage regulating device for semiconductor reaction equipment and semiconductor reaction equipment

Abstract

The present invention relates to a pressure regulating device for semiconductor reaction equipment and the semiconductor reaction equipment. The pressure regulating device includes a permanent magnet baffle, an energized coil, and a ventilation duct. A through hole is formed at the bottom of a chamber of the semiconductor reaction equipment. The first end of the ventilation duct communicates with the interior of the chamber through the through hole. The permanent magnet baffle is disposed within the chamber and can be raised or lowered by the energized coil to increase or decrease the distance between the permanent magnet baffle and the through hole. The present invention can achieve rapid and precise regulation of the pressure within the chamber while preventing the generation of mechanical particles.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a voltage regulating device for semiconductor reaction equipment and the semiconductor reaction equipment. Background Art

[0002] Existing semiconductor reactors primarily use butterfly valves to adjust chamber pressure. Specifically, the valve plate rotates at varying angles to block the exhaust pipe to varying degrees, thereby achieving pressure control. These pressure-regulating devices in existing semiconductor reactors suffer from the following drawbacks: The rotation of the butterfly valve creates friction with the chamber's inner wall, leading to the generation of mechanical particles. Furthermore, when used with large-diameter exhaust pipes, the butterfly valve requires simultaneous control of multiple valve plates and rotating shafts, making rapid and precise pressure regulation difficult. Summary of the Invention

[0003] The object of the present invention is to provide a pressure regulating device for semiconductor reaction equipment and semiconductor reaction equipment, so as to achieve rapid and precise regulation of the pressure in the chamber while avoiding the generation of mechanical particles.

[0004] The objectives of the present invention are achieved by the following technical solution. A voltage regulating device for semiconductor reaction equipment according to the present invention comprises a permanent magnet baffle, an energized coil, and a ventilation duct. A through hole is defined at the bottom of a chamber of the semiconductor reaction equipment. A first end of the ventilation duct communicates with the interior of the chamber through the through hole. The permanent magnet baffle is disposed within the chamber and can be raised or lowered by the energized coil to increase or decrease the distance between the permanent magnet baffle and the through hole.

[0005] In some embodiments, the energized coil and the permanent magnet baffle are symmetrical about the center of the ventilation duct.

[0006] In some embodiments, the center of the permanent magnet baffle and the center of the through hole are on the same straight line.

[0007] In some embodiments, the voltage regulating device further includes a coil housing, the energized coil is disposed inside the coil housing, and the coil housing is sleeved on the outer surface of the ventilation duct.

[0008] In some embodiments, the pressure regulating device further includes an exhaust portion, which is connected to the second end of the ventilation pipe to exhaust the gas in the chamber.

[0009] In some embodiments, the permanent magnet baffle includes a bottom plane, a top plane, and a side surface. The permanent magnet baffle rises or falls under the action of the energized coil to increase or decrease the distance between the side surface of the permanent magnet baffle and the arc-shaped surface of the inner wall of the through hole.

[0010] In some embodiments, the side surface of the permanent magnet baffle is configured to be arc-shaped.

[0011] In some embodiments, the top plane of the permanent magnet baffle is configured in a convex form.

[0012] In some embodiments, a side surface of the permanent magnet baffle is in contact with the arc-shaped surface of the through hole, and a contact surface between the permanent magnet baffle and the through hole is sealed by a sealing ring.

[0013] The present invention also provides a semiconductor reaction device, comprising the aforementioned voltage regulating device for semiconductor reaction equipment.

[0014] The beneficial effects of the present invention include at least:

[0015] 1. The first end of the ventilation duct is connected to the interior of the chamber through a through-hole. A permanent magnet baffle is arranged inside the chamber. The permanent magnet baffle can be raised or lowered under the action of an energized coil to increase or decrease the distance between the permanent magnet baffle and the through-hole. By adjusting the current in the energized coil, the permanent magnet baffle inside the chamber is driven to move up and down. While avoiding friction between the permanent magnet baffle and the surface of the inner wall of the chamber and thus the generation of mechanical particles, the pressure in the chamber can be quickly and accurately adjusted.

[0016] 2. The energized coil and the permanent magnet baffle are symmetrical about the center of the ventilation duct, and the center of the permanent magnet baffle is on the same straight line as the center of the through hole. This enables the permanent magnet baffle to rise and fall in the vertical direction under the action of the electromagnetic force of the energized coil, thereby preventing the permanent magnet baffle from deflecting.

[0017] 3. The side surface of the permanent magnet baffle described in the present invention is constructed into an arc shape and the inner wall of the through hole is constructed into an arc surface that can be adapted to the side surface of the permanent magnet baffle, so that the distance between the top plane of the permanent magnet baffle and the bottom surface of the chamber can be fine-tuned, and the distance between the side surface of the permanent magnet baffle and the arc surface of the through hole still changes accordingly, so that the pressure regulating device described in the present invention can achieve precise pressure control even when the opening is very small.

[0018] 4. The permanent magnet baffle of the present invention and the center of the ventilation duct are also on the same straight line, which can make the airflow in the chamber 4 concentrically distributed.

[0019] 5. The top plane of the permanent magnet baffle is constructed in a convex form, which can reduce the space occupied by the process gas in the chamber and improve the pressure regulation efficiency.

[0020] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the following preferred embodiments are specifically cited and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A schematic diagram of the three-dimensional structure of a voltage regulating device for semiconductor reaction equipment according to one embodiment of the present invention is shown;

[0022] Figure 2 FIG2 shows a schematic diagram of a three-dimensional structure of a permanent magnet baffle according to an embodiment of the present invention;

[0023] Figure 3 A schematic plan view of the structure of a voltage regulating device for semiconductor reaction equipment according to an embodiment of the present invention is shown;

[0024] Figure 4 A schematic diagram of the three-dimensional structure of a permanent magnet baffle according to another embodiment of the present invention is shown. DETAILED DESCRIPTION

[0025] To further illustrate the technical means of the present invention, the following describes in detail a voltage regulating device for semiconductor reaction equipment and a specific implementation of the semiconductor reaction equipment proposed in accordance with the present invention in combination with the accompanying drawings and preferred embodiments.

[0026] like Figure 1 as well as Figure 2As shown, the present invention proposes a voltage regulating device for semiconductor reaction equipment, comprising a permanent magnet baffle 1, an energized coil 2, and a ventilation duct 3. A through hole (not shown) is provided in the center of the bottom of a chamber 4 of the semiconductor reaction equipment. Process gas introduced into the chamber 4 is discharged outside the chamber 4 through the through hole. The ventilation duct 3 is constructed as a hollow cylinder, with a first end 31 of the ventilation duct 3 communicating with the interior of the chamber 4 through the through hole. The shape and size of the through hole are adapted to the first end 31 of the ventilation duct 3 and the permanent magnet baffle 1. The permanent magnet baffle 1 is disposed within the chamber 4, specifically, directly above the through hole. The energized coil 2 is located outside the chamber 4. When energized, the energized coil 2 generates a magnetic field that applies an upward electromagnetic force to the permanent magnet baffle 1. The energized coil 2 can cause the permanent magnet baffle 1 to rise or fall, thereby increasing or decreasing the distance between the permanent magnet baffle 1 and the through hole. Specifically, the height of the permanent magnet baffle 1 is adjusted by adjusting the magnitude of the current flowing into the energized coil 2 to control the exhaust volume of the chamber 4 and thereby adjust the pressure in the chamber 4 .

[0027] In a preferred embodiment, Figure 1 As shown, to prevent the permanent magnet baffle 1 from shifting during the lifting process, the energized coil 2 and the permanent magnet baffle 1 are symmetrical about the center of the ventilation duct 3. The center of the permanent magnet baffle 1 and the center of the through hole are aligned. This allows the permanent magnet baffle 1 to be raised and lowered vertically under the action of the electromagnetic force of the energized coil 2, thereby preventing the permanent magnet baffle 1 from shifting. In addition, the centers of the permanent magnet baffle 1 and the ventilation duct 3 described in the present invention are also aligned on the same line, which can ensure that the airflow in the chamber 4 is concentrically distributed (the airflow trajectory has the same or similar center), thereby improving the uniformity of the airflow within the cavity.

[0028] like Figure 1 As shown, the voltage regulating device of the present invention further includes a coil housing 21 , the energized coil 2 is arranged inside the coil housing 21 , and the coil housing 21 is sleeved on the outer surface of the ventilation pipe 3 .

[0029] The pressure regulating device of the present invention further includes an exhaust unit (not shown), which is connected to the second end 32 of the ventilation pipe 3 to exhaust the gas in the chamber 4. The exhaust unit can preferably be a molecular pump.

[0030] like Figure 2As shown, the permanent magnet baffle 1 includes a bottom plane 11, a top plane 12, and a side surface 13. In a preferred embodiment, the side surface 13 of the permanent magnet baffle 1 is configured to be arc-shaped. For example, the permanent magnet baffle 1 can be configured to be truncated cone-shaped, and the shape and size of the through hole are adapted to the permanent magnet baffle 1. Specifically, the inner wall of the through hole is configured to be an arc-shaped surface that can adapt to the side surface of the permanent magnet baffle 1. When the permanent magnet baffle 1 is raised or lowered under the action of the energized coil 2, the distance between the side surface of the permanent magnet baffle 1 and the arc-shaped surface of the inner wall of the through hole can be increased or decreased.

[0031] like Figure 3 As shown, assuming that when the permanent magnet baffle 1 is raised to an arbitrary position, the distance between the top plane 12 of the permanent magnet baffle 1 and the bottom surface of the chamber 4 is H, the distance between the side surface of the permanent magnet baffle 1 and the arc surface of the through hole is D, and when the side surface of the permanent magnet baffle 1 contacts the arc surface of the through hole, the distance between the top plane 12 of the permanent magnet baffle 1 and the bottom surface of the chamber 4 is H0, then D, H0 and H satisfy the following relationship: D = (H-H0) * constant (the constant is the residual of a certain angle) Chord value), therefore, it can be concluded that the distance D between the side surface of the permanent magnet baffle 1 and the arc-shaped surface of the through hole is linearly related to the distance H between the top plane 12 of the permanent magnet baffle 1 and the bottom surface of the chamber 4, that is, by fine-tuning the distance H between the top plane 12 of the permanent magnet baffle 1 and the bottom surface of the chamber 4, the distance D between the side surface of the permanent magnet baffle 1 and the arc-shaped surface of the through hole still changes accordingly, so that the voltage regulating device described in the present invention can achieve precise pressure control even when the opening is very small. The opening degree of the permanent magnet baffle 1 is 0-100%, that is, after the permanent magnet baffle 1 is raised to a sufficient height, the valve plate will not affect the gas flow. The side surface of the permanent magnet baffle 1 is adapted to the shape and size of the arc surface of the through hole. Since the permanent magnet baffle 1 can be constructed into a truncated cone shape, the through hole is also truncated cone-shaped accordingly. The busbar length of the permanent magnet baffle 1 is greater than or equal to the busbar length of the through hole. The longer the busbar length S of the through hole and the corresponding busbar length of the permanent magnet baffle 1 are, the more sensitive the pressure regulating device of the present invention is to pressure control and regulation.

[0032] When the energized coil 2 is not energized, the side surface of the permanent magnet baffle 1 can contact the arc surface of the through hole, and the contact surface between the permanent magnet baffle 1 and the arc surface of the through hole can be sealed by a sealing ring. When the current in the energized coil 2 increases, the permanent magnet baffle 1 rises, the distance between the side surface of the permanent magnet baffle 1 and the arc surface of the through hole increases, and the exhaust volume in the cavity 4 also increases accordingly; when the current in the energized coil 2 decreases, the permanent magnet baffle 1 lowers, the distance between the side surface of the permanent magnet baffle 1 and the arc surface of the through hole decreases, and the exhaust volume in the cavity 4 also decreases accordingly. By adjusting the current in the energized coil 2, the permanent magnet baffle 1 inside the cavity 4 is driven to move up and down, avoiding friction between the permanent magnet baffle 1 and the surface of the inner wall of the cavity 4 and thus avoiding the generation of mechanical particles, while achieving rapid and precise adjustment of the pressure in the cavity 4.

[0033] In some other embodiments, such as Figure 3 As shown, the top plane 12 of the permanent magnet baffle 1 is constructed in a convex form. In this embodiment, the convex top plane 12 of the permanent magnet baffle 1 can reduce the space occupied by the process gas in the chamber 4. When exhausting the chamber 4, compared with Figure 2 With the permanent magnet baffle 1 shown, the time required for the chamber 4 to reach the same pressure is reduced, thereby improving the pressure regulation efficiency.

[0034] The present invention also includes a semiconductor reaction device, including the above-mentioned voltage regulating device for semiconductor reaction equipment.

[0035] The above description of the disclosed aspects is provided to enable any person skilled in the art to practice the present invention. Various modifications to these aspects will be apparent to those skilled in the art, and the general principles defined herein may be applied to other aspects without departing from the scope of the present invention. Therefore, the present invention is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A voltage regulating device for semiconductor reaction equipment, characterized in that: The semiconductor reaction device comprises a permanent magnet baffle, an energized coil, and a ventilation duct. A through hole is provided at the bottom of the chamber of the semiconductor reaction device. A first end of the ventilation duct is connected to the interior of the chamber through the through hole. The permanent magnet baffle is disposed inside the chamber. The permanent magnet baffle can be raised or lowered under the action of the energized coil to increase or decrease the distance between the permanent magnet baffle and the through hole. The height of the permanent magnet baffle is adjusted by adjusting the magnitude of the current passed through the energized coil to control the exhaust volume of the chamber, thereby achieving the purpose of adjusting the pressure in the chamber. The permanent magnet baffle includes a bottom plane, a top plane and a side surface. The permanent magnet baffle rises or falls under the action of the energized coil to increase or decrease the distance between the side surface of the permanent magnet baffle and the arc-shaped surface of the inner wall of the through hole. The distance between the top plane of the permanent magnet baffle and the bottom surface of the chamber is H, and the distance between the side surface of the permanent magnet baffle and the arc-shaped surface of the through hole is D. When the side surface of the permanent magnet baffle contacts the arc-shaped surface of the through hole, the distance between the top plane of the permanent magnet baffle and the bottom surface of the chamber is H0. Then D, H0 and H satisfy the following relationship: D=(H-H0)*constant. The distance D between the side surface of the permanent magnet baffle and the arc-shaped surface of the through hole is linearly related to the distance H between the top plane of the permanent magnet baffle and the bottom surface of the chamber, so that the voltage regulating device can achieve precise pressure control even when the opening is very small. The side surface of the permanent magnet baffle is configured to be arc-shaped, and the side surface of the permanent magnet baffle can contact the arc-shaped surface of the through hole; The top plane of the permanent magnet baffle is configured in a convex form.

2. The voltage regulating device for semiconductor reaction equipment according to claim 1, characterized in that: The energized coil and the permanent magnet baffle are both symmetrical about the center of the ventilation duct.

3. The voltage regulating device for semiconductor reaction equipment according to claim 2, characterized in that: The center of the permanent magnet baffle and the center of the through hole are on the same straight line.

4. The voltage regulating device for semiconductor reaction equipment according to claim 1, characterized in that: The voltage regulating device further comprises a coil housing, the energized coil is arranged inside the coil housing, and the coil housing is sleeved on the outer surface of the ventilation duct.

5. The voltage regulating device for semiconductor reaction equipment according to claim 1, characterized in that: The pressure regulating device further includes an air extraction portion, which is communicated with the second end of the ventilation pipe to extract the gas in the chamber.

6. The voltage regulating device for semiconductor reaction equipment according to claim 1, characterized in that: The contact surface between the permanent magnet baffle and the through hole is sealed by a sealing ring.

7. A semiconductor reaction device, characterized in that: The device comprises a voltage regulating device for semiconductor reaction equipment according to any one of claims 1 to 6.

Images