Substrate processing apparatus, computer-readable recording medium having program recorded thereon, and substrate processing method

Abstract

A substrate processing apparatus for processing a substrate is provided. The substrate processing apparatus (1) includes a control unit (90). The control unit (90) rotates a substrate (W) at a first speed, and then rotates the substrate (W) at a second speed. The control unit (90) rotates the substrate (W) at the second speed, and then rotates the substrate at a third speed while continuously supplying a drying fluid from a drying fluid nozzle (30) to the substrate (W) for a prescribed time. The control unit (90) continues to supply the drying fluid from the drying fluid nozzle (30), and moves the drying fluid nozzle (30) from a center portion of the substrate (W) toward a peripheral portion of the substrate (W).

Description

TECHNICAL FIELD

[0001] The present application relates to a substrate processing apparatus and a substrate processing method for processing a substrate. Further, the present application relates to a computer-readable recording medium having recorded a program for executing such a substrate processing method. BACKGROUND

[0002] A semiconductor element is manufactured by repeatedly performing film formation, patterning, etching, and the like of various circuits and electrode wiring, and going through a plurality of processes. With high integration of semiconductor elements, a multilayer structure is required, and a thin film layer constituting the multilayer structure needs to be planarized after film formation, so that a substrate surface is planarized by a chemical mechanical polishing process (CMP). CMP planarizes a substrate surface by a mechanical action of cutting by abrasive grains, with chemical reaction of a polishing liquid and sliding contact with the substrate. An example of such a substrate is a wafer.

[0003] Residues such as a polishing liquid containing abrasive grains and polishing debris remain on a polished substrate. Therefore, in the past, after polishing a substrate, the substrate was cleaned by separating residues from the substrate by chemical reaction by a cleaning liquid (mainly acid, alkali, organic acid, and the like) and by a brush and a physical action based on a spray nozzle, and then removing foreign matter from the substrate by pure water. Examples of a substrate processing method after cleaning include spin drying in which pure water on a cleaned substrate is spun off by centrifugal force, and Rotagoni drying. Rotagoni drying is a method in which a flow of a rinsing liquid for cleaning is supplied from a rinsing liquid nozzle to a rotating substrate to form a liquid film covering the entire substrate surface, and a flow of a drying gas containing IPA (isopropyl alcohol) vapor is supplied from a drying gas nozzle to the inside of the flow, and then the rinsing liquid nozzle and the drying gas nozzle are moved from the center of the rotating substrate to the periphery, thereby drying the entire substrate surface.

[0004] PRIOR ART DOCUMENTS

[0005] PATENT DOCUMENTS

[0006] Patent Document 1: Japanese Patent Application Publication No. 2010-50436

[0007] However, with high integration and high density of semiconductor elements in recent years, wiring of a circuit is becoming more and more fine, and the wiring material is also changing, and even absorbed moisture (moisture absorbed on a substrate) that did not cause a problem in the past drying method is required to be removed. Therefore, an object of the present application is to provide a substrate processing apparatus, a substrate processing method, and a computer-readable recording medium having recorded a program for executing such a method, which improve the removal rate of residual absorbed moisture on a substrate. SUMMARY

[0008] In one embodiment, a substrate processing method is provided, which is a method of processing a substrate, by rotating the substrate at a first speed, and supplying a liquid to the substrate from a liquid nozzle located above a center portion of the substrate for a prescribed time to form a liquid film on the entire surface of the substrate, stopping the supply of the liquid, rotating the substrate at the first speed, then rotating the substrate at a second speed, rotating the substrate at the second speed, then rotating the substrate at a third speed while supplying a drying fluid to the substrate from a drying fluid nozzle located above the center portion of the substrate for a prescribed time, and then continuing the supply of the drying fluid from the drying fluid nozzle while moving the drying fluid nozzle from the center portion of the substrate toward a peripheral portion of the substrate. With this configuration, once a liquid film is formed on the entire surface of the substrate, the drying fluid is supplied to the substrate by designing the process of rotating the substrate at the second speed to thin the central portion of the liquid film or to remove the liquid film to expose the surface of the substrate. As a result, the residual adsorbed moisture on the substrate can be more reliably removed, and an improved substrate processing method can be provided. In addition, the amount of drying fluid required for evaporation of the liquid can be reduced, and reduction of environmental burden and cost reduction can be achieved.

[0009] In one embodiment, the second speed is faster than the first speed. By making the second speed an appropriate speed faster than the first speed, the central portion of the liquid film can be thinned or the liquid film can be removed (to expose the surface of the substrate). In addition, from the viewpoint of throughput, the second speed is preferably faster than the first speed.

[0010] In one embodiment, the method further includes a process of stopping the movement of the drying fluid nozzle when the drying fluid nozzle is located above the peripheral portion of the substrate, and supplying the drying fluid to the peripheral portion of the substrate for a prescribed time to dry the peripheral portion of the substrate. With this configuration, the peripheral portion of the substrate can be more reliably dried, and as a result, the entire surface of the substrate can be more reliably dried.

[0011] In one embodiment, the method further includes a process of stopping the supply of the drying fluid from the drying fluid nozzle after the drying fluid supplied from the drying fluid nozzle located above the peripheral portion of the substrate dries the peripheral portion of the substrate, and moving a non-active gas nozzle located above the center portion of the substrate, and supplying a non-active gas to the center portion of the substrate from the non-active gas nozzle. With this configuration, by also supplying a non-active gas from above the substrate, the substrate can be more reliably dried, and the drying quality of the substrate can be improved.

[0012] In one embodiment, the method further includes a step of moving the drying fluid nozzle and the non-active gas nozzle from the center portion of the substrate toward the peripheral portion of the substrate while supplying the non-active gas from the non-active gas nozzle to the substrate. With this configuration, evaporation of the liquid on the substrate is promoted by supplying the non-active gas to the substrate.

[0013] In one embodiment, the step of supplying the non-active gas from the non-active gas nozzle to the substrate includes a step of supplying the non-active gas to the rear of the position of the drying fluid nozzle in the direction of movement of the drying fluid nozzle and the non-active gas nozzle. With this configuration, evaporation of the liquid is further promoted by supplying the non-active gas to the position where the drying fluid has been supplied after the drying fluid has been supplied.

[0014] In one embodiment, the first speed includes a liquid film formation speed for forming a film of the liquid on the substrate and a thin film formation speed for thinning the central portion of the film, and the substrate processing method further includes a step of rotating the substrate at the liquid film formation speed and then rotating the substrate at the thin film formation speed for thinning the central portion of the film, the thin film formation speed being faster than the liquid film formation speed. With this configuration, the liquid on the substrate is moved to the outer side in the radial direction of the substrate by centrifugal force, and thinning of the central portion of the liquid film or removal of the liquid film can be performed smoothly when the substrate is rotated at the second speed.

[0015] In one embodiment, the drying fluid is a liquid organic solvent. By using a liquid organic solvent as the drying fluid, the liquid on the substrate can be evaporated together with the drying fluid efficiently.

[0016] In one embodiment, the drying fluid is a gas containing a gaseous organic solvent, and the content of the organic solvent in the drying fluid is 8 to 30%. By using this drying fluid, the liquid on the substrate can be evaporated together with the drying fluid efficiently.

[0017] In one embodiment, the substrate is a substrate whose surface has been planarized by a chemical mechanical polishing process and is used in a wet state for processing. With this configuration, the drying fluid can be supplied after the central portion of the liquid film has been thinned or spun off and removed. As a result, the amount of the drying fluid used can be reduced, and the adsorbed moisture on the substrate can be eliminated.

[0018] One embodiment provides a substrate processing apparatus that processes a substrate, including: a substrate holding portion that holds the substrate and rotates the substrate; a liquid supply mechanism that supplies a liquid from a liquid nozzle to the substrate; a drying fluid supply mechanism that supplies a drying fluid from a drying fluid nozzle to the substrate; a nozzle moving mechanism that moves the liquid nozzle and the drying fluid nozzle; and a control portion that controls the operations of the substrate holding portion, the liquid supply mechanism, and the drying fluid supply mechanism. The control portion is configured to: issue an instruction to the substrate holding portion to rotate the substrate at a first speed, issue an instruction to the liquid supply mechanism to continuously supply the liquid from the liquid nozzle located above the center portion of the substrate to the substrate for a predetermined time to form a liquid film on the entire surface of the substrate, issue an instruction to the liquid supply mechanism to stop the supply of the liquid, and after rotating the substrate at the first speed, issue an instruction to the substrate holding portion to rotate the substrate at a second speed. After rotating the substrate at the second speed, the control portion is configured to issue an instruction to the substrate holding portion to rotate the substrate at a third speed, issue an instruction to the drying fluid supply mechanism to continuously supply the drying fluid from the drying fluid nozzle located above the center portion of the substrate to the substrate for a predetermined time, and then continue to supply the drying fluid from the drying fluid nozzle while issuing an instruction to the nozzle moving mechanism to move the drying fluid nozzle from the center portion of the substrate toward the periphery portion of the substrate. With this configuration, after the liquid film is formed on the entire surface of the substrate, the drying fluid is supplied to the substrate by designing the process of rotating the substrate at the second speed, which thins the liquid film in the center portion of the liquid film or removes the liquid film to expose the surface of the substrate. As a result, the residual adsorbed moisture on the substrate can be more reliably removed, and an improved substrate processing method can be provided. Furthermore, the amount of the drying fluid required for evaporation of the liquid can be reduced, and environmental burden and cost can be reduced.

[0019] In one embodiment, the second speed is faster than the first speed. By making the second speed faster than the first speed, the center portion of the liquid film can be thinned or the liquid film can be removed (to expose the surface of the substrate). Furthermore, from the viewpoint of throughput, the second speed is preferably faster than the first speed.

[0020] In one embodiment, the control portion is configured to, when the drying fluid nozzle is located above the periphery portion of the substrate, issue an instruction to the nozzle moving mechanism to stop the movement of the drying fluid nozzle for a predetermined time to dry the periphery portion of the substrate. With this configuration, the periphery portion of the substrate can be more reliably dried, and as a result, the entire surface of the substrate can be more reliably dried.

[0021] In one embodiment, the substrate processing apparatus further includes a non-active gas supply mechanism that supplies non-active gas to the substrate from a non-active gas nozzle, and the control section is configured to: dry the peripheral portion of the substrate with the drying fluid supplied from the drying fluid nozzle positioned above the peripheral portion of the substrate, and then instruct the nozzle moving mechanism to move the non-active gas nozzle so that the non-active gas nozzle is positioned above the central portion of the substrate, and instruct the non-active gas supply mechanism to supply the non-active gas to the central portion of the substrate from the non-active gas nozzle. With this configuration, the substrate can be dried more reliably and the drying quality of the substrate can be improved by also supplying non-active gas from above the substrate.

[0022] In one embodiment, the substrate processing apparatus further includes a non-active gas supply mechanism that supplies non-active gas to the substrate from a non-active gas nozzle, and the control section is configured to: in a state where the drying fluid is supplied to the substrate and the substrate is rotating at a fourth speed, instruct the non-active gas supply mechanism to supply the non-active gas to the substrate from the non-active gas nozzle, and instruct the nozzle moving mechanism to move the non-active gas nozzle from the central portion of the substrate toward the peripheral portion of the substrate. With this configuration, the evaporation of the liquid on the substrate can be promoted by supplying non-active gas to the surface of the substrate.

[0023] In one embodiment, the non-active gas nozzle is positioned behind the drying fluid nozzle in the moving direction of the drying fluid nozzle and the non-active gas nozzle. With this configuration, the evaporation of the liquid can be further promoted by supplying non-active gas to the position where the drying fluid was supplied after the drying fluid is supplied.

[0024] In one embodiment, the nozzle moving mechanism includes a robot arm that holds the liquid nozzle, the drying fluid nozzle, and the non-active gas nozzle together. With this configuration, the nozzle moving mechanism can be configured compactly.

[0025] In one embodiment, the first speed includes a liquid film formation speed for forming a film of the liquid on the substrate, and a thin film formation speed for thinning the central portion of the film, and the control section is configured to rotate the substrate at the liquid film formation speed, and then instruct the substrate holding section to rotate the substrate at the thin film formation speed, the thin film formation speed being a speed faster than the liquid film formation speed. With this configuration, the liquid on the substrate can be moved to the outer side in the radial direction of the substrate by centrifugal force, and the thinning of the central portion of the liquid film or the removal of the liquid film when the substrate is rotated at the second speed can be performed smoothly.

[0026] In one embodiment, the nozzle moving mechanism includes a heater disposed adjacent to the drying fluid nozzle. With this configuration, the drying fluid ejected from the drying fluid nozzle can be heated. As a result, the evaporation time of the organic solvent such as IPA can be shortened.

[0027] In one embodiment, the drying fluid supply mechanism further includes an electrically conductive drying fluid supply line connected to the drying fluid nozzle. With this configuration, static electricity can be prevented, and explosion of the drying fluid can be prevented.

[0028] In one embodiment, the substrate processing apparatus further includes: a ventilation mechanism disposed above the substrate holding portion; and an exhaust duct, the ventilation mechanism and the exhaust duct being configured to form a downward flow of air. With this configuration, by forming the downward flow of air, uniform air flow can be generated on the front and back surfaces of the substrate, and the attachment of contaminants to the substrate due to turbulent air flow can be prevented.

[0029] In one embodiment, the drying fluid is a liquid organic solvent. By using a liquid organic solvent as the drying fluid, the liquid on the substrate can be efficiently evaporated together with the drying fluid.

[0030] In one embodiment, the drying fluid is a gas containing a gaseous organic solvent, and the content ratio of the organic solvent in the drying fluid is 8% to 30%. By using this drying fluid, the liquid on the substrate can be efficiently evaporated together with the drying fluid.

[0031] In one embodiment, the substrate processing apparatus includes a cover disposed around the substrate held by the substrate holding portion, the cover being configured to be rotatable in the same direction as the substrate and at the same speed as the substrate.

[0032] In one embodiment, the substrate holding portion includes a plurality of chucks that hold the peripheral portion of the substrate, and the cover is fixed to the plurality of chucks.

[0033] In one embodiment, the substrate processing apparatus includes a cover rotating mechanism that rotates the cover, the cover rotating mechanism including: a cover motor; and a transmission device that transmits the rotational force of the cover motor to the cover.

[0034] One embodiment provides a recording medium that records a program for causing a computer to function as a substrate processing apparatus that processes a substrate, the program causing the computer to execute the steps of: instructing a substrate holding portion to rotate the substrate at a first speed, instructing a liquid supply mechanism to supply liquid from a liquid nozzle located above a center portion of the substrate to the substrate for a prescribed period of time to form a liquid film on an entire surface of the substrate W, instructing the liquid supply mechanism to stop the supply of the liquid, instructing the substrate holding portion to rotate the substrate at a second speed after the substrate is rotated at the first speed, instructing the substrate holding portion to rotate the substrate at a third speed after the substrate is rotated at the second speed, and instructing a drying fluid supply mechanism to supply a drying fluid from a drying fluid nozzle to the substrate for a prescribed period of time while the substrate is rotated at the third speed. With this configuration, once the liquid film is formed on the entire surface of the substrate, the drying fluid is supplied to the substrate after the central portion of the liquid film is thinned or after the liquid film is removed to expose the surface of the substrate by designing the process of rotating the substrate at the second speed. As a result, the residual adsorbed moisture on the substrate can be more reliably removed, and an improved substrate processing method can be provided. Furthermore, the amount of the drying fluid required for evaporation of the liquid can be reduced, and reduction of environmental burden and cost reduction can be achieved.

[0035] In one embodiment, the second speed is a speed faster than the first speed. By making the second speed a suitable speed faster than the first speed, the central portion of the liquid film can be thinned or the liquid film can be removed (to expose the surface of the substrate). Furthermore, from the viewpoint of throughput, the second speed is preferably faster than the first speed.

[0036] In one embodiment, the program causes the computer to further execute the step of: when the drying fluid nozzle is located above the peripheral portion of the substrate, instructing the nozzle moving mechanism to stop the movement of the drying fluid nozzle for a prescribed period of time to dry the peripheral portion of the substrate. With this configuration, the peripheral portion of the substrate can be more reliably dried, and as a result, the entire surface of the substrate can be more reliably dried.

[0037] In one embodiment, the program causes the computer to further execute the steps of: drying the peripheral portion of the substrate with the drying fluid supplied from the drying fluid nozzle located above the peripheral portion of the substrate; and after the peripheral portion of the substrate is dried with the drying fluid supplied from the drying fluid nozzle located above the peripheral portion of the substrate, instructing the nozzle moving mechanism to move the non-reactive gas nozzle so that the non-reactive gas nozzle is located above the central portion of the substrate; and instructing the non-reactive gas supply mechanism to supply the non-reactive gas to the central portion of the substrate from the non-reactive gas nozzle. With this configuration, the substrate can be dried more reliably and the drying quality of the substrate can be improved by also supplying the non-reactive gas from above the substrate.

[0038] In one embodiment, the program causes the computer to further execute the steps of: in a state where the drying fluid is supplied to the substrate and the substrate is rotated at the fourth speed, instructing the non-reactive gas supply mechanism to supply the non-reactive gas to the surface of the substrate from the non-reactive gas nozzle. With this configuration, the evaporation of the liquid on the substrate can be promoted by supplying the non-reactive gas to the surface of the substrate.

[0039] In one embodiment, the first speed includes: a liquid film forming speed for forming a film of the liquid on the substrate; and a thin film forming speed for thinning the central portion of the film; and the program causes the computer to further execute the steps of: after rotating the substrate at the liquid film forming speed, instructing the substrate holding portion to rotate the substrate at the thin film forming speed, the thin film forming speed being a speed faster than the liquid film forming speed. With this configuration, the liquid on the substrate can be moved to the outer side in the radial direction of the substrate by centrifugal force, and the thinning of the central portion of the liquid film or the removal of the liquid film when the substrate is rotated at the second speed can be smoothly performed.

[0040] Effects of Invention

[0041] With the present application, after a film of the liquid is formed on the entire surface of the substrate, the central portion of the film of the liquid on the substrate is thinned or the liquid film is removed by rotating the substrate at the second speed, and then the drying fluid is supplied to the substrate. As a result, the adsorbed moisture can be inhibited from remaining on the substrate, and the substrate can be dried. BRIEF DESCRIPTION OF DRAWINGS

[0042] Figure 1 is a perspective view schematically showing one embodiment of a substrate processing apparatus.

[0043] Figure 2 is a view of the substrate processing apparatus as viewed from the side. Figure 1

[0044] Figure 3 ​is a schematic view showing an embodiment of a substrate processing apparatus that holds a plurality of nozzles to a plurality of robot arms.

[0045] Figure 4 is a schematic view showing another embodiment of a substrate processing apparatus that holds a plurality of nozzles to a plurality of robot arms.

[0046] Figure 5 is a plan view for explaining the arrangement of a liquid nozzle, a drying fluid nozzle, and a non-reactive gas nozzle.

[0047] Figure 6 is a flowchart showing an embodiment of a substrate processing method.

[0048] Figure 7 is a state diagram showing a substrate processing apparatus.

[0049] Figure 8 is a state diagram showing a substrate processing apparatus.

[0050] Figure 9 is a state diagram showing a substrate processing apparatus.

[0051] Figure 10 is a state diagram showing a substrate processing apparatus.

[0052] Figure 11 is a state diagram showing a substrate processing apparatus.

[0053] Figure 12 is a state diagram showing a substrate processing apparatus.

[0054] Figure 13 is a state diagram showing a substrate processing apparatus.

[0055] Figure 14 is a state diagram showing a substrate processing apparatus.

[0056] Figure 15 is a state diagram showing a substrate processing apparatus.

[0057] Figure 16 is a state diagram showing a substrate processing apparatus.

[0058] Figure 17 is a state diagram showing a substrate processing apparatus.

[0059] Figure 18 is a schematic view showing another embodiment of a nozzle moving mechanism.

[0060] Figure 19 is a perspective view schematically showing another embodiment of a substrate processing apparatus.

[0061] Figure 20 is a schematic view of a drying fluid generating apparatus.

[0062] Figure 21 This is a flowchart illustrating another embodiment of the processing method for substrate W.

[0063] Figure 22 This is a state diagram showing the substrate processing apparatus.

[0064] Figure 23 This is a state diagram showing the substrate processing apparatus.

[0065] Figure 24 This is a diagram illustrating another embodiment of the substrate processing apparatus.

[0066] Figure 25 This is a diagram illustrating yet another embodiment of the substrate processing apparatus.

[0067] Figure 26 This is a schematic diagram illustrating one embodiment of a substrate processing system equipped with a substrate processing apparatus. Detailed Implementation

[0068] Hereinafter, embodiments of the present invention will be described with reference to the figures. Figure 1 This is a perspective view schematically illustrating one embodiment of a substrate processing apparatus. Figure 2 Viewed from the side Figure 1 Figure 1 of the substrate processing apparatus. Figure 1 The illustrations of the partition wall 6, ventilation mechanism 8, and exhaust duct 9, which will be described later, are omitted. The substrate processing apparatus 1 is an apparatus for processing substrates. (As...) Figure 1 and Figure 2 As shown, the substrate processing apparatus 1 includes: a substrate holding section 10 for holding and rotating the substrate W; a liquid supply mechanism 24 for supplying liquid to the substrate W; a drying fluid supply mechanism 34 for supplying drying fluid to the substrate W; an inactive gas supply mechanism 54 for supplying inactive gas to the substrate W; a first back-side supply mechanism 69 for supplying liquid to the substrate W; and a second back-side supply mechanism 70 for supplying inactive gas to the substrate W. The substrate W in this embodiment is a substrate that has been polished by a chemical mechanical polishing (CMP) process and is also a cleaned substrate. Examples of cleaning methods include liquid cleaning (pure water, chemical solution, etc.), mechanical cleaning (sliding contact using tools such as rollers or pen-shaped objects), and cleaning combining these liquid cleaning and mechanical cleaning methods. The substrate W has a surface 2 that has undergone planarization treatment.

[0069] The entire contents of U.S. Patent Application Publication No. 2017 / 0252894 are incorporated herein by reference as an example of a substrate processing apparatus (chemical mechanical polishing apparatus) in this specification.

[0070] The liquid supply mechanism 24 includes a liquid nozzle 20 that supplies liquid, a liquid supply line 21 that supplies liquid to the liquid nozzle 20, and a liquid flow rate control valve 23 that adjusts the flow rate of liquid flowing in the liquid supply line 21 (the flow rate of liquid supplied to the substrate W). The liquid supply mechanism 24 supplies liquid from the liquid nozzle 20 to the substrate W.

[0071] The drying fluid supply mechanism 34 includes a drying fluid nozzle 30 that supplies drying fluid, a drying fluid supply line 31 that supplies drying fluid to the drying fluid nozzle 30, and a drying fluid flow rate control valve 33 that adjusts the flow rate of drying fluid flowing in the drying fluid supply line 31 (the flow rate of drying fluid supplied to the substrate W). The drying fluid supply mechanism 34 supplies drying fluid from the drying fluid nozzle 30 to the substrate W.

[0072] The non-active gas supply mechanism 54 includes a non-active gas nozzle 50 that supplies non-active gas, a non-active gas supply line 51 that supplies non-active gas to the non-active gas nozzle 50, and a non-active gas flow rate control valve 53 that adjusts the flow rate of non-active gas flowing in the non-active gas supply line 51 (the flow rate of non-active gas supplied to the substrate W). The non-active gas supply mechanism 54 supplies non-active gas from the non-active gas nozzle 50 to the substrate W.

[0073] The first backside supply mechanism 69 includes a first backside nozzle 71 that supplies liquid, a first backside supply line 75 that supplies liquid to the first backside nozzle 71, and a first backside flow rate control valve 79 that adjusts the flow rate of liquid flowing in the first backside supply line 75 (the flow rate of liquid supplied to the substrate W). The first backside supply mechanism 69 supplies liquid from the first backside nozzle 71 to the substrate W.

[0074] The second backside supply mechanism 70 includes a second backside nozzle 72 that supplies non-active gas, a second backside supply line 76 that supplies non-active gas to the second backside nozzle 72, and a second backside flow rate control valve 80 that adjusts the flow rate of non-active gas flowing in the second backside supply line 76 (the flow rate of non-active gas supplied to the substrate W). The second backside supply mechanism 70 supplies non-active gas from the second backside nozzle 72 to the substrate W.

[0075] The substrate processing apparatus 1 further includes a nozzle moving mechanism 60 that moves the liquid nozzle 20, the drying fluid nozzle 30, and the non-active gas nozzle 50, and a control section 90 that controls the operations of the substrate holding section 10, the liquid supply mechanism 24, the drying fluid supply mechanism 34, the non-active gas supply mechanism 54, the first backside supply mechanism 69, the second backside supply mechanism 70, and the nozzle moving mechanism 60.

[0076] The liquid nozzle 20, the drying fluid nozzle 30, and the nonreactive gas nozzle 50 (hereinafter, referred to as nozzles 20, 30, 50) are disposed above the substrate W held by the substrate holder 10 and are disposed toward the lower side (toward the surface 2 of the substrate W). The backside nozzles 71, 72 are disposed below the substrate W held by the substrate holder 10 and are disposed toward the upper side. The backside nozzles 71, 72 of the present embodiment are disposed toward the center portion of the back surface 3 of the substrate W, but as long as a portion of the fluid (nonreactive gas or liquid) contacts the center of the back surface 3 of the substrate W, the shape of the nozzles can be a single pipe, or a fan type, or a conical type. The present embodiment fixes the positions of the backside nozzles 71, 72, but the backside nozzles 71, 72 of one embodiment can be configured to be swingable (movable in the radial direction of the substrate W) in a plane parallel to the substrate W by a backside nozzle moving mechanism not shown. The liquid nozzle 20, the drying fluid nozzle 30, and the nonreactive gas nozzle 50 supply liquid, drying fluid, and nonreactive gas to the surface 2 of the substrate W, respectively, and the first backside nozzle 71 and the second backside nozzle 72 supply liquid and nonreactive gas to the back surface 3 of the substrate W, respectively.

[0077] One example of the liquid supplied from the liquid nozzle 20 and the first backside nozzle 71 is the use of pure water. One example of the drying fluid is the use of an organic solvent of liquid or gas. Examples of the organic solvent can include IPA (isopropyl alcohol) and an alcohol-containing fluorine-based solvent. The present specification defines the organic solvent to include both liquid and gas. When IPA is used as the organic solvent, the concentration of IPA in the organic solvent is preferably 100%, but depending on the processing conditions of the substrate W, the organic solvent can be a mixed fluid of IPA. One example of the nonreactive gas is the use of nitrogen.

[0078] The substrate holder 10 includes a plurality of chucks 11 that hold the peripheral portion of the substrate W and a rotation motor 12 that is connected to the plurality of chucks 11. The chuck 11 is configured to hold the substrate W horizontally. The rotation motor 12 is electrically connected to the control section 90, and the operation of the rotation motor 12 is controlled by the control section 90. The substrate W held by the chuck 11 is rotated around the center axis CP of the substrate holder 10 by the rotation motor 12. The substrate W of the present embodiment is rotated in the direction of the arrow Dr shown in FIG. 1, but the direction of rotation of the substrate W is not limited to the present embodiment and can be rotated in the opposite direction of the arrow Dr. When the substrate W is held by the substrate holder 10, the center O of the substrate W coincides with the center axis CP. Figure 1 Figure 1 Figure 2 is an example in which the substrate W is clamped by the chuck 11. One example of the chuck 11 can be configured such that the end portion of the substrate W enters the shallow groove portion of the chuck 11, but as long as the chuck 11 is configured to support the side surface of the substrate W, the configuration of the chuck 11 is not limited to the present embodiment.

[0079] ​​The nozzle moving mechanism 60 includes a robot arm 61 disposed above the substrate W held by the substrate holding portion 10, a swing motor 62 as a robot arm rotating mechanism that rotates the robot arm 61, and a swing shaft 63 coupled to the swing motor 62. The robot arm 61 has a length greater than the radius of the substrate W. The liquid nozzle 20, the drying fluid nozzle 30, and the nonreactive gas nozzle 50 are attached to the front end of the robot arm 61. The nozzles 20, 30, and 50 are held by the robot arm 61. The swing shaft 63 is attached to the other end of the robot arm 61.

[0080] The swing motor 62 is electrically connected to the control portion 90, and the operation of the swing motor 62 is controlled by the control portion 90. The swing motor 62 rotates the swing shaft 63 by a predetermined angle, thereby rotating the robot arm 61 in a plane parallel to the substrate W. Thus, the liquid nozzle 20, the drying fluid nozzle 30, and the nonreactive gas nozzle 50 fixed to the robot arm 61 move in the radial direction of the substrate W by the rotation of the robot arm 61. During the processing of the substrate W, the nozzle moving mechanism 60 moves the nozzles 20, 30, and 50 integrally from the center portion of the substrate W toward the peripheral portion of the substrate W (in the radial direction of the substrate W, and in the direction of the arrow Dn shown in FIG. 1). Figure 1

[0081] Figure 1 In the embodiment shown, the nozzles 20, 30, and 50 are held together on one robot arm 61, but one embodiment can hold the nozzles 20, 30, and 50 on multiple robot arms. Figure 3 In the embodiment shown, the nozzle moving mechanism 60 includes multiple robot arms 61a, 61b, and 61c (a liquid nozzle holding robot arm 61a, a drying fluid nozzle holding robot arm 61b, and a nonreactive gas nozzle holding robot arm 61c). The nozzles 20, 30, and 50 are held by the robot arms 61a, 61b, and 61c, respectively. The liquid nozzle 20 is attached to the front end of the liquid nozzle holding robot arm 61a, the drying fluid nozzle 30 is attached to the front end of the drying fluid nozzle holding robot arm 61b, and the nonreactive gas nozzle 50 is attached to the front end of the nonreactive gas nozzle holding robot arm 61c. The other ends of the robot arms 61a, 61b, and 61c are attached to the swing shaft 63. The configurations of the embodiments shown in FIGS. 2 and 3 are the same as those of the embodiment shown in FIG. 1, except for the above. Figure 3 Figure 1

[0082] Figure 4 is a schematic view of another embodiment of the substrate processing apparatus 1 that holds the nozzles 20, 30, and 50 on multiple robot arms. The configurations of the embodiments shown in FIGS. 4 and 5 are the same as those of the embodiment shown in FIG. 1, except for the above. Figure 4 Figure 1 Figure 4 ​​​​​In the illustrated embodiment, the nozzle moving mechanism 60 includes: a liquid nozzle moving mechanism 60a that moves the liquid nozzle 20; a drying fluid nozzle moving mechanism 60b that moves the drying fluid nozzle 30; and a non-active gas nozzle moving mechanism 60c that moves the non-active gas nozzle 50.

[0083] The liquid nozzle moving mechanism 60a includes: a liquid nozzle holding arm 61a; a swivel motor 62a that swivels the liquid nozzle holding arm 61a; and a swivel shaft 63a that is coupled to the swivel motor 62a. The drying fluid nozzle moving mechanism 60b includes: a drying fluid nozzle holding arm 61b; a swivel motor 62b that swivels the drying fluid nozzle holding arm 61b; and a swivel shaft 63b that is coupled to the swivel motor 62b. The non-active gas nozzle moving mechanism 60c includes: a non-active gas nozzle holding arm 61c; a swivel motor 62c that swivels the non-active gas nozzle holding arm 61c; and a swivel shaft 63c that is coupled to the swivel motor 62c. The nozzles 20, 30, 50 are held by the arms 61a, 61b, 61c, respectively. The liquid nozzle 20 is attached to the front end of the liquid nozzle holding arm 61a, the drying fluid nozzle 30 is attached to the front end of the drying fluid nozzle holding arm 61b, and the non-active gas nozzle 50 is attached to the front end of the non-active gas nozzle holding arm 61c. The other ends of the arms 61a, 61b, 61c are connected to the swivel shafts 63a, 63b, 63c, respectively.

[0084] The swivel motors 62a, 62b, 62c are electrically connected to the control section 90, which is configured to independently control the operations of the swivel motors 62a, 62b, 62c. The swivel motors 62a, 62b, 62c respectively rotate the swivel shafts 63a, 63b, 63c by a predetermined angle, thereby respectively swiveling the arms 61a, 61b, 61c in a plane parallel to the substrate W. The nozzles 20, 30, 50 are moved in the radial direction of the substrate W by the swiveling of the arms 61a, 61b, 61c. The nozzle moving mechanism 60 of the present embodiment independently moves the nozzles 20, 30, 50 in the radial direction of the substrate W during processing of the substrate W.

[0085] The arrangement of the liquid nozzle moving mechanism 60a, the drying fluid nozzle moving mechanism 60b, and the non-active gas nozzle moving mechanism 60c (hereinafter, simply referred to as the nozzle moving mechanisms 60a, 60b, 60c) is not limited to the present embodiment. One embodiment is that the nozzle moving mechanisms 60b, 60c can be arranged near the liquid nozzle moving mechanism 60a, or the nozzle moving mechanisms 60a, 60b, 60c can be arranged apart from each other. Figure 4The nozzles 20, 30, 50 are arranged in the height direction in the order of the liquid nozzle 20, the dry fluid nozzle 30, and the non-active gas nozzle 50, but the arrangement of the nozzles 20, 30, 50 in the height direction is not limited to this order. Figure 4

[0086] Returning to Figure 1 The one end of the liquid supply line 21 is connected to the liquid nozzle 20, and the other end is connected to a liquid supply source not shown. The one end of the dry fluid supply line 31 is connected to the dry fluid nozzle 30, and the other end is connected to a dry fluid supply source not shown. The one end of the non-active gas supply line 51 is connected to the non-active gas nozzle 50, and the other end is connected to a non-active gas supply source not shown.

[0087] The liquid is supplied from the liquid supply source to the liquid nozzle 20 through the liquid supply line 21, and further to the surface 2 of the substrate W from the liquid nozzle 20. The dry fluid is supplied from the dry fluid supply source to the dry fluid nozzle 30 through the dry fluid supply line 31, and further to the surface 2 of the substrate W from the dry fluid nozzle 30. The non-active gas is supplied from the non-active gas supply source to the non-active gas nozzle 50 through the non-active gas supply line 51, and further to the surface 2 of the substrate W from the non-active gas nozzle 50.

[0088] A liquid flow control valve 23 is installed in the liquid supply line 21, and the flow rate of the liquid flowing in the liquid supply line 21 (the flow rate of the liquid supplied to the surface 2 of the substrate W) is adjusted by the liquid flow control valve 23. A dry fluid flow control valve 33 is installed in the dry fluid supply line 31, and the flow rate of the dry fluid flowing in the dry fluid supply line 31 (the flow rate of the dry fluid supplied to the surface 2 of the substrate W) is adjusted by the dry fluid flow control valve 33. A non-active gas flow control valve 53 is installed in the non-active gas supply line 51, and the flow rate of the non-active gas flowing in the non-active gas supply line 51 (the flow rate of the non-active gas supplied to the surface 2 of the substrate W) is adjusted by the non-active gas flow control valve 53. The liquid flow control valve 23, the dry fluid flow control valve 33, and the non-active gas flow control valve 53 are electrically connected to the control section 90, and the operations of the liquid flow control valve 23, the dry fluid flow control valve 33, and the non-active gas flow control valve 53 are controlled by the control section 90. The liquid flow control valve 23, the dry fluid flow control valve 33, and the non-active gas flow control valve 53 can change the flow rates of the liquid, the dry fluid, and the non-active gas, respectively, in the processing of the substrate W.

[0089] ​The liquid flow control valve 23 opens and closes a liquid flow path of the liquid supply line 21, the dry fluid flow control valve 33 opens and closes a dry fluid flow path of the dry fluid supply line 31, and the inactive gas flow control valve 53 opens and closes an inactive gas flow path of the inactive gas supply line 51. When the liquid flow control valve 23, the dry fluid flow control valve 33, and the inactive gas flow control valve 53 are opened, the liquid, the dry fluid, and the inactive gas are supplied to the liquid nozzle 20, the dry fluid nozzle 30, and the inactive gas nozzle 50, respectively. When the liquid flow control valve 23, the dry fluid flow control valve 33, and the inactive gas flow control valve 53 are closed, the supply of the liquid, the dry fluid, and the inactive gas is stopped.

[0090] One end of the first backside supply line 75 is connected to the first backside nozzle 71, and the other end is connected to a liquid supply source not shown. One end of the second backside supply line 76 is connected to the second backside nozzle 72, and the other end is connected to an inactive gas supply source not shown.

[0091] The liquid is supplied from the liquid supply source to the first backside nozzle 71 through the first backside supply line 75, and further supplied from the first backside nozzle 71 to the back surface 3 of the substrate W. The inactive gas is supplied from the inactive gas supply source to the second backside nozzle 72 through the second backside supply line 76, and further supplied from the second backside nozzle 72 to the back surface 3 of the substrate W.

[0092] The first backside flow control valve 79 is installed in the first backside supply line 75, and the flow rate of the liquid flowing in the first backside supply line 75 (the flow rate of the liquid supplied to the back surface 3 of the substrate W) is adjusted by the first backside flow control valve 79. The second backside flow control valve 80 is installed in the second backside supply line 76, and the flow rate of the inactive gas flowing in the second backside supply line 76 (the flow rate of the inactive gas supplied to the back surface 3 of the substrate W) is adjusted by the second backside flow control valve 80. The first backside flow control valve 79 and the second backside flow control valve 80 are electrically connected to the control section 90, and the operation of the first backside flow control valve 79 and the second backside flow control valve 80 is controlled by the control section 90. The first backside flow control valve 79 and the second backside flow control valve 80 can change the flow rates of the liquid and the inactive gas, respectively, in the processing of the substrate W.

[0093] Further, the first back surface side flow control valve 79 is configured to open and close a liquid flow path of the first back surface side supply line 75, and the second back surface side flow control valve 80 is configured to open and close a non-active gas flow path of the second back surface side supply line 76. When the first back surface side flow control valve 79 and the second back surface side flow control valve 80 are opened, the liquid and the non-active gas are supplied to the first back surface nozzle 71 and the second back surface nozzle 72, respectively. When the first back surface side flow control valve 79 and the second back surface side flow control valve 80 are closed, the supply of the liquid and the non-active gas is stopped.

[0094] The control section 90 is constituted by at least one computer. The control section 90 is provided with a storage device 90a in which a program is stored, and an arithmetic device 90b that performs an operation according to a command included in the program. The arithmetic device 90b includes a CPU (Central Processing Unit) or a GPU (Graphics Processing Unit), or the like, that performs an operation according to a command included in the program stored in the storage device 90a. The storage device 90a is provided with a main storage device (for example, a random access memory) that is accessible by the arithmetic device 90b, and a secondary storage device (for example, a hard disk device or a solid state drive) that stores data and programs. Further, the program in the control section 90 contains a recipe for the substrate processing device 1 to execute a processing method of the substrate W.

[0095] The at least one computer can also be one server or a plurality of servers. The control section 90 can also be an edge server or a PLC (Programmable Logic Controller), can also be a cloud server connected to a communication network such as the Internet or a regional network, or can also be a fog computing device (a gateway, a fog server, a router, or the like) provided in a network. The control section 90 can also be a plurality of servers connected through a communication network such as the Internet or a regional network. For example, the control section 90 can also be a combination of an edge server and a cloud server.

[0096] As Figure 2As shown, the substrate processing apparatus 1 is provided with a partition wall 6 and a ventilation mechanism 8 disposed above the substrate holding section 10. The interior space of the partition wall 6 constitutes a processing chamber 7. The substrate holding section 10, the nozzles 20, 30, 50, the nozzle moving mechanism 60, and the backside nozzles 71, 72 are disposed in the processing chamber 7. The partition wall 6 is provided with a door (not shown) through which the substrate W is carried into and out of the processing chamber 7. A clean air inlet 6a is formed in the upper portion of the partition wall 6, and an exhaust duct 9 is formed in the lower portion of the partition wall 6. The ventilation mechanism 8 is disposed on the upper surface of the partition wall 6. The ventilation mechanism 8 is provided with a fan 8A and a filter 8B that removes fine particles and dust from the air sent out from the fan 8A. The ventilation mechanism 8 sends clean air into the processing chamber 7 through the clean air inlet 6a and causes the gas in the processing chamber 7 to be exhausted from the exhaust duct 9. Thus, a down flow of clean air is formed in the processing chamber 7. By forming such a down flow of air, the surface 2 and the backside 3 of the substrate W are caused to generate uniform airflows, and the attachment of contaminant to the substrate W due to turbulence of the airflows is prevented.

[0097] One embodiment is that the exhaust duct 9 can also be constituted by a plurality of exhaust ports (not shown) formed in the lower portion of the partition wall 6. By constituting the exhaust duct 9 by a plurality of exhaust ports, a down flow with less turbulence can be obtained. One embodiment can also form the exhaust duct 9 in the entire lower portion of the partition wall 6.

[0098] The drying fluid of the present embodiment uses an organic solvent such as IPA (isopropyl alcohol) or an alcohol-containing fluorine-based solvent. The present embodiment can prevent the drying fluid supplied to the substrate W from evaporating and re-attaching to the substrate W and promote the evaporation of the liquid on the substrate W described later, because a down flow of air is formed by the ventilation mechanism 8 and the exhaust duct 9. In addition, because such an organic solvent can generate a mixed gas having explosiveness when mixed with air, it is necessary to optimize the airflow in the processing chamber 7 and exhaust from the viewpoint of safety. The present embodiment can prevent explosion because a down flow of air is formed by the ventilation mechanism 8 and the exhaust duct 9.

[0099] In order to prevent the above explosion, a part or all of the drying fluid supply line 31 can also be made of an electrically conductive material in one embodiment. By using an electrically conductive material for the material of the drying fluid supply line 31, static electricity can be prevented, and explosion of the drying fluid can be prevented. Furthermore, an electrically conductive material can also be used as the material of a part or all of the chuck 11 in one embodiment. Furthermore, the drying fluid supply line 31 and / or the chuck 11 can also be grounded in one embodiment, to prevent the drying fluid supply line 31 and / or the chuck 11 from becoming charged. In this case, a specific example of the electrically conductive material used for the drying fluid supply line 31 is an electrically conductive resin tube (a tube in which an electrically conductive resin is laminated on the surface, or a tube in which a resin material in which electrically conductive resin particles (CNT) are mixed is coated on the surface, etc.). Furthermore, a specific example of the electrically conductive material used for the chuck 11 is electrically conductive polyether ether ketone (electrically conductive PEEK).

[0100] Figure 5 is a plan view for explaining the arrangement of the liquid nozzle 20, the drying fluid nozzle 30, and the nonreactive gas nozzle 50. As shown in Figure 5 , the liquid nozzle 20, the drying fluid nozzle 30, and the nonreactive gas nozzle 50 are arranged adjacent to each other. With respect to the moving direction Dn of the nozzles 20, 30, 50, the nonreactive gas nozzle 50 is arranged behind (upstream side) of the drying fluid nozzle 30. More specifically, the nonreactive gas nozzle 50 is arranged in such a manner as to trace the locus described by the drying fluid nozzle 30. In other words, the nonreactive gas nozzle 50 is arranged on the circular arc L having the straight line connecting the axis of the swing shaft 63 (refer to Figure 1 ) and the drying fluid nozzle 30 as a radius. Therefore, the nonreactive gas nozzle 50 traces the same locus as the drying fluid nozzle 30, and moves following the locus of the drying fluid nozzle 30.

[0101] In the present embodiment, the liquid nozzle 20 is arranged on the downstream side (front) of the drying fluid nozzle 30 in the moving direction Dn. In the present embodiment, the liquid nozzle 20 is arranged on the circular arc L, but the arrangement of the liquid nozzle 20 is not limited to the present embodiment. In one embodiment, the liquid nozzle 20 can also be arranged at a position away from the circular arc L. The arrangement of the nozzles 20, 30, 50 is not limited to the present embodiment when the nonreactive gas nozzle 50 is arranged in such a manner as to move following the locus of the drying fluid nozzle 30. The liquid nozzle 20 and the nonreactive gas nozzle 50 can also be arranged at positions away from the circular arc L, but as in the embodiment shown in Figure 5 , the arrangement of the drying fluid nozzle 30 and the nonreactive gas nozzle 50 promotes the evaporation of the liquid on the substrate W (drying of the substrate W) described later. This is because, as shown in Figure 5In the illustrated embodiment, the non-active gas nozzle 50 is configured to trace the same trajectory as the drying fluid nozzle 30 and to move following the trajectory of the drying fluid nozzle 30, and to inject the non-active gas toward the rear of the injection position of the drying fluid. Examples of the shape of the injection port of the nozzles 20, 30, 50 include a circular shape, a fan shape, and an elliptical shape, but the shape of the injection port of the nozzles 20, 30, 50 is not limited to these. Furthermore, the nozzles 20, 30, 50 are configured to be able to inject various fluids regardless of the form of the fluid to be injected (liquid, liquid droplets, and mist, etc.).

[0102] Next, a method of processing the substrate W will be described. Figure 6 is a flowchart showing one embodiment of the method of processing the substrate W. Figure 7 to Figure 17 is a state diagram showing the state of the substrate processing apparatus 1 in each process of steps 1-1 to 1-10. Figure 7 to Figure 17 is a view omitting the substrate holding portion 10, the rotary motor 62, the rotary shaft 63, and the control portion 90. Figure 7 to Figure 17 In the figure, the valve shown by the hollow line indicates the open state, and the valve shown by the solid line indicates the closed state. The processes of steps 1-1 to 1-10 and the supply of the non-active gas from the second back surface nozzle 72 to the back surface 3 are performed simultaneously from now on. In the processing of the substrate W, the back surface 3 is dried and the substrate W is processed by supplying the non-active gas to the back surface 3. One embodiment of the method of processing described below uses the substrate processing apparatus 1 described in Reference Examples Figure 1 , Figure 2 and Figure 5 without special description.

[0103] First, the substrate processing apparatus 1 rotates the substrate W at the first speed, and forms a film (liquid film) of the liquid on the entire surface of the substrate W (the entire surface of the surface 2 of the substrate W) by continuously supplying the liquid to the substrate W (the surface 2 of the substrate W) from the liquid nozzle 20 located above the central portion of the substrate W for a prescribed time (steps 1-1 to 1-4). Specifically, the control portion 90 issues a command to the rotary motor 12 of the substrate holding portion 10 to rotate the substrate W at the first speed, and issues a command to the liquid flow rate control valve 23 of the liquid supply mechanism 24 to continuously supply the liquid to the substrate W from the liquid nozzle 20 located above the central portion of the substrate W for a prescribed time, and forms a liquid film on the entire surface of the substrate W.

[0104] At this point, during simplification, when the surface tension σ (σ = 0.0728 N / m for water at 20 degrees Celsius) acts as a force p (p = 4σ / d, where d is the diameter of the liquid film) constantly contracting towards the inside of the liquid film as if covered by an elastic membrane, if the rotational speed of the substrate W is too high and the centrifugal force is greater than the surface tension σ, the liquid film may not be able to form. Therefore, the rotational speed (the aforementioned first speed) of the substrate W is preset such that the surface tension σ is greater than the centrifugal force F (F = mω²r, where ω is the angular velocity proportional to the rotational speed of the substrate W) acting on the liquid film present on the substrate W.

[0105] The control unit 90 operates according to commands contained in the program stored in the storage device 90a. That is, the control unit 90 issues commands to the substrate holding unit 10 to rotate the substrate W at a first speed, and issues commands to the liquid flow control valve 23 of the liquid supply mechanism 24 to perform the step of continuously supplying liquid to the substrate W from the liquid nozzle 20 located above the center of the substrate W for a predetermined time, thereby forming a liquid film on the entire surface of the substrate W.

[0106] The following describes the details of steps 1-1 to 1-4. The so-called first speed mentioned above includes the liquid supply speed, liquid film formation speed, and thin film formation speed, which will be described later. First, the substrate processing apparatus 1 performs step 1-1. Step 1-1 is as follows... Figure 7 As shown, the substrate processing apparatus 1 holds the substrate W with the substrate holding part 10, rotates the substrate W at a predetermined liquid supply speed, and supplies liquid to the surface 2 and back surface 3 of the substrate W continuously for a predetermined time (liquid supply time) from the liquid nozzle 20 located above the center of the substrate W and the first back surface nozzle 71. Furthermore, the substrate processing apparatus 1 rotates the substrate W at the liquid supply speed and supplies an inert gas from the second back surface nozzle 72 to the back surface 3 of the substrate W. In this embodiment, pure water is used as the liquid, and nitrogen is used as the inert gas.

[0107] In step 1-1, the control unit 90 first issues a command to the rotary motor 62 of the nozzle moving mechanism 60, causing the liquid nozzle 20 to move above the center of the substrate W. As a result, the robotic arm 61 is positioned on the axis CP. The liquid nozzle 20 sprays liquid onto the center of the surface 2 of the substrate W. The first back nozzle 71 sprays liquid onto the center of the back surface 3 of the substrate W. The second back nozzle 72 sprays inert gas onto the center of the back surface 3. Here, the liquid supply speed refers to the rotational speed of the substrate W when liquid is supplied to it in step 1-1. Figure 4 In the illustrated embodiment, the control unit 90 issues a command to the rotary motor 62a of the nozzle moving mechanism 60, causing the liquid nozzle 20 to move above the center of the substrate W. As a result, the liquid nozzle holding robotic arm 61a remains positioned on the axis CP. Figure 4In the illustrated embodiment, the dry fluid nozzle holding robot 61b and the non-reactive gas nozzle holding robot 61c are positioned at the standby position (outside the substrate holding portion 10).

[0108] The liquid supplied to the center portion of the surface 2 of the substrate W spreads over the entire surface 2 of the substrate W by centrifugal force, and the liquid supplied to the center portion of the back surface 3 of the substrate W spreads over the entire back surface 3 of the substrate W by centrifugal force. The non-reactive gas supplied to the center portion of the back surface 3 of the substrate W spreads over the entire back surface 3 of the substrate W by centrifugal force. In one embodiment, the liquid nozzle 20 can also be positioned on the axis center CP (directly above the center O) in the process of step 1-1, and the liquid nozzle 20 can also spray liquid at the center O of the substrate W.

[0109] By spraying non-reactive gas from the second back surface nozzle 72, the liquid supplied from the liquid nozzle 20 and the first back surface nozzle 71 can be prevented from flowing into the second back surface nozzle 72. In one embodiment, the flow rate of the non-reactive gas supplied to the back surface 3 in step 1-1 is 5 L / min. In one embodiment, the flow rate of the non-reactive gas supplied to the back surface 3 of the substrate W is always set to be smaller than the flow rate of the non-reactive gas supplied to the surface 2 of the substrate W, which will be described later.

[0110] Specifically, the control portion 90 issues a command to the rotation motor 12 of the substrate holding portion 10 to rotate the substrate W at the liquid supply speed, and issues a command to the liquid flow rate control valve 23 of the liquid supply mechanism 24 and the first back surface side flow rate control valve 79 of the first back surface side supply mechanism 69 to supply liquid from the liquid nozzle 20 and the first back surface nozzle 71 positioned above the center portion of the substrate W to the surface 2 and the back surface 3 of the substrate W, respectively, for the liquid supply time. Further, the control portion 90 rotates the substrate W at the liquid supply speed, and issues a command to the second back surface side flow rate control valve 80 of the second back surface side supply mechanism 70 to supply non-reactive gas from the second back surface nozzle 72 to the back surface 3 of the substrate W.

[0111] The control portion 90 operates in accordance with the commands included in the program stored in the storage device 90a. That is, the control portion 90 performs the following steps: issues a command to the rotation motor 12 of the substrate holding portion 10 to rotate the substrate W at the liquid supply speed, and issues a command to the liquid flow rate control valve 23 of the liquid supply mechanism 24 and the first back surface side flow rate control valve 79 of the first back surface side supply mechanism 69 to supply liquid from the liquid nozzle 20 and the first back surface nozzle 71 positioned above the center portion of the substrate W to the surface 2 and the back surface 3 of the substrate W, respectively, for the liquid supply time; and rotates the substrate W at the liquid supply speed, and issues a command to the second back surface side flow rate control valve 80 of the second back surface side supply mechanism 70 to supply non-reactive gas from the second back surface nozzle 72 to the back surface 3 of the substrate W.

[0112] In one embodiment, the liquid flow rate supplied to the surface 2 of the substrate W is 0.8 L / min. The liquid supply speed at this time is 35 min -1 , 25 min -1 , or 20 min -1 . The liquid supply time when the liquid flow rate is 0.8 L / min and the liquid supply speed is 35 min -1 is 3.75 seconds. The liquid supply time when the liquid flow rate is 0.8 L / min and the liquid supply speed is 25 min -1 is 7.5 seconds. The liquid supply time when the liquid flow rate is 0.8 L / min and the liquid supply speed is 20 min -1 is 11.25 seconds.

[0113] Further, in one embodiment, the liquid flow rate supplied to the surface 2 of the substrate W is 1 L / min. The liquid supply speed at this time is 35 min -1 , 25 min -1 , or 20 min -1 . The liquid supply time when the liquid flow rate is 1 L / min and the liquid supply speed is 35 min -1 is 3 seconds. The liquid supply time when the liquid flow rate is 1 L / min and the liquid supply speed is 25 min -1 is 6 seconds. The liquid supply time when the liquid flow rate is 1 L / min and the liquid supply speed is 20 min -1 is 9 seconds.

[0114] Further, in one embodiment, the liquid flow rate supplied to the surface 2 of the substrate W is 2 L / min. The liquid supply speed at this time is 35 min -1 , 25 min -1 , or 20 min -1 . The liquid supply time when the liquid flow rate is 2 L / min and the liquid supply speed is 35 min -1 is 1.5 seconds. The liquid supply time when the liquid flow rate is 2 L / min and the liquid supply speed is 25 min -1 is 3 seconds. The liquid supply time when the liquid flow rate is 2 L / min and the liquid supply speed is 20 min -1 is 4.5 seconds.

[0115] Steps 1-2 and 1-3 are as shown in Figure 8 and Figure 9 , the substrate processing apparatus 1 rotates the substrate W for a prescribed liquid film formation time (total liquid film formation time) at a prescribed liquid film formation speed. Step 1-2 is as shown in Figure 8As shown, the substrate processing apparatus 1 continues to supply the non-reactive gas from the second backside nozzle 72, stops supplying the liquid from the liquid nozzle 20 and the first backside nozzle 71, and rotates the substrate W at a predetermined liquid film formation speed for a predetermined time (first liquid film formation time). Specifically, the control section 90 supplies the non-reactive gas to the back surface 3 from the second backside nozzle 72, and issues a command to the liquid flow control valve 23 and the first backside flow control valve 79 to stop supplying the liquid, and issues a command to the rotation motor 12 of the substrate holding section 10 to rotate the substrate W at the above-described liquid film formation speed for the first liquid film formation time. At this time, the so-called liquid film formation speed is a rotation speed of the substrate W for forming a film of the liquid on the surface 2 of the substrate W. The liquid film formation speed is the same speed as the liquid supply speed or a slower speed than the liquid supply speed. In one embodiment, the liquid film formation speed is 20 min"1, and the first liquid film formation time is 3 seconds. In one embodiment, the flow rate of the non-reactive gas supplied to the back surface 3 in step 1-2 is 5 L / min.

[0116] The control section 90 operates in accordance with a command included in a program stored in the storage device 90a. That is, the control section 90 performs the following step: issues a command to the liquid flow control valve 23 and the first backside flow control valve 79 to stop supplying the liquid, and issues a command to the rotation motor 12 to rotate the substrate W at the above-described liquid film formation speed for the first liquid film formation time. The above-described step is performed in a state where the non-reactive gas is supplied to the back surface 3 from the second backside nozzle 72.

[0117] The liquid film state in step 1-2 is a state where the centrifugal force of the liquid film acting on the surface 2 of the substrate W is smaller than the surface tension acting between the liquid and the upper surface of the substrate, or the centrifugal force and the surface tension are substantially balanced. By decelerating the rotation speed of the substrate W, the centrifugal force of the liquid acting on the substrate W is weakened, and the amount of the liquid discharged from the substrate W is reduced.

[0118] Step 1-3 is as shown in FIG. 1C. Figure 9 As shown, the substrate processing apparatus 1 continues to supply the non-reactive gas from the second backside nozzle 72, and continues to rotate the substrate W at the liquid film formation speed for a predetermined time (second liquid film formation time).

[0119] In one embodiment in step 1-3, the flow rate of the non-reactive gas supplied to the back surface 3 is 5 L / min, and the second liquid film formation time is 2 seconds. The total liquid film formation time is a time obtained by combining the first liquid film formation time and the second liquid film formation time.

[0120] In steps 1-3, in this embodiment, the process is the same as in steps 1-2. The substrate W is rotated at the liquid film formation speed for a second liquid film formation time. However, in one embodiment, in steps 1-3, the substrate W may also be rotated at a slower speed (second liquid film formation speed) than the rotation speed (first liquid film formation speed) of the substrate W in steps 1-2.

[0121] By performing step 1-1, the liquid (cleaning solution such as pure water) adhering to the cleaned substrate mixes with the liquid supplied in step 1-1. Furthermore, through steps 1-1 to 1-3, a uniform liquid film containing the liquid adhering to the cleaned substrate is formed on the surface 2 of the substrate W (the entire surface of the surface 2 of the substrate W). By forming a liquid film on the substrate W, watermarks caused by the liquid adhering to the cleaned substrate W can be prevented. Moreover, as explained in steps 1-2 and 1-3, by rotating the substrate W at a lower speed, the occurrence of watermarks can be prevented more reliably.

[0122] Steps 1-4 as follows Figure 10 As shown, the substrate processing apparatus 1 continues to supply inactive gas from the second back nozzle 72, and rotates the substrate W at a predetermined thin film forming speed for a predetermined time (thin film forming time). Specifically, the control unit 90 continues to supply inactive gas from the second back nozzle 72, and issues a command to the rotation motor 12 of the substrate holding unit 10 to rotate the substrate W at the aforementioned thin film forming speed for the thin film forming time. Here, the thin film forming speed is the rotational speed of the substrate W that causes the central portion of the liquid film on the surface 2 of the substrate W to become thinner. The thin film forming speed is a speed faster than the liquid film forming speed. Specifically, the thin film forming speed is 5 to 25 times faster than the liquid film forming speed. In one embodiment, the liquid film forming speed is 100 min. -1 The film formation time is 2 seconds, and the supply flow rate of the inactive gas in step 1-1 is 5 L / min.

[0123] The control unit 90 operates according to commands contained in a program stored in the storage device 90a. That is, the control unit 90 issues commands to the rotary motor 12 of the substrate holding unit 10 to execute the step of rotating the substrate W at the aforementioned thin film forming speed for a continuous thin film forming time. The above step is performed while inactive gas is supplied to the back surface 3 from the second back surface nozzle 72.

[0124] Steps 1-4, the thin film region formation process, involves removing most of the liquid from the substrate W and forming a circular thin film region with a very thin residual ultrathin film (a thin film of liquid) in the center of the liquid film. By applying a strong centrifugal force to the liquid film on the substrate W, the liquid present in the center of the surface 2 of the substrate W is pushed outward in the radial direction, thereby forming a circular thin film region in the center of the surface 2 of the substrate W.

[0125] By implementing steps 1-4, the substrate processing apparatus 1 moves the liquid on the surface 2 of the substrate W gradually to the outer side in the radial direction of the substrate W by centrifugal force. As a result, the central portion of the liquid film on the surface 2 becomes thin, and the peripheral portion of the above film becomes thick.

[0126] Step 1-5, as shown in FIG. 1-5, the substrate processing apparatus 1 changes the supply flow rate of the inactive gas, and rotates the substrate W at a prescribed second speed (spin-up speed) for a prescribed spin-up time. Specifically, the control section 90 issues an instruction to the second backside flow rate control valve 80 to change the supply amount of the inactive gas. The control section 90 supplies the inactive gas from the second backside nozzle 72 to the back surface 3, and issues an instruction to the rotation motor 12 of the substrate holding section 10 to rotate the substrate W at the above second speed for the spin-up time. At this time, the so-called second speed is the rotation speed of the substrate W for spinning up the film of the liquid on the surface 2 of the substrate W. The second speed is a speed faster than the first speed. Figure 11 The control section 90 operates in accordance with the commands contained in the program stored in the storage device 90a. That is, the control section 90 performs the following steps: issues an instruction to the second backside flow rate control valve 80 to change the supply amount of the inactive gas; and issues an instruction to the rotation motor 12 of the substrate holding section 10 to rotate the substrate W at the second speed for the spin-up time. The above steps are performed in a state where the inactive gas is supplied from the second backside nozzle 72 to the back surface 3.

[0127] One embodiment is that the second speed is 500 min -1 , the spin-up time is 1 second, and the supply flow rate of the inactive gas in step 1-5 is 2 L / min. Step 1-5 is to spin up the liquid film on the surface 2 of the substrate W by rotating the substrate W at the second speed. As a result, the liquid film on the surface 2 is removed, and the surface 2 of the substrate W is exposed.

[0128] The liquid film on the surface 2 is removed by step 1-5, but in the case where, for example, the substrate W has a hydrophilic property, or the like, the liquid on the surface 2 cannot be completely removed, and a part of the liquid remains (is adsorbed) on the surface 2. The following steps 1-6 to 1-9 are processes for supplying a drying fluid to the surface 2 of the substrate W, and evaporating the liquid by mixing the drying fluid remaining on the surface 2 with the liquid. That is, the surface 2 of the substrate W is dried.

[0129] Step 1-6, as shown in FIG. 1-6, the substrate processing apparatus 1 changes the supply flow rate of the drying fluid, and rotates the substrate W at a prescribed third speed (drying speed) for a prescribed drying time. Specifically, the control section 90 issues an instruction to the third backside flow rate control valve 80 to change the supply amount of the drying fluid. The control section 90 supplies the drying fluid from the third backside nozzle 73 to the back surface 3, and issues an instruction to the rotation motor 12 of the substrate holding section 10 to rotate the substrate W at the above third speed for the drying time. At this time, the so-called third speed is the rotation speed of the substrate W for drying the liquid on the surface 2 of the substrate W. The third speed is a speed faster than the second speed.

[0130] Figure 12 ​As shown, the substrate processing apparatus 1 rotates the substrate W at a prescribed third speed (drying fluid supply speed), and supplies liquid IPA (hereinafter, referred to as liquid IPA) as a drying fluid to the surface 2 of the substrate W from the drying fluid nozzle 30 for a prescribed time (drying fluid supply time). Further, the substrate processing apparatus 1 changes the supply flow rate of the inactive gas. In Step 1-6, the robot arm 61 is positioned on the axis center CP. Specifically, the drying fluid nozzle 30 is positioned above the center portion of the substrate W, and the drying fluid nozzle 30 sprays the liquid IPA to the center portion of the substrate W. In this embodiment, the drying fluid nozzle 30 is positioned on the axis center CP, and the drying fluid nozzle 30 sprays the liquid IPA to the center O of the substrate W.

[0131] In the embodiment shown in FIG. 1, the liquid nozzle holding robot arm 61a and the inactive gas nozzle holding robot arm 61c are positioned at the standby position (outside of the substrate holding portion 10). In the embodiment shown in FIG. 1, the control portion 90 instructs the liquid nozzle 20 and the liquid nozzle holding robot arm 61a to move to the standby position, and instructs the drying fluid nozzle 30 to move above the center portion of the substrate W (on the axis center CP) before Step 1-6. Figure 3 In the embodiment shown in FIG. 1, the liquid nozzle 20 and the liquid nozzle holding robot arm 61a are positioned at the standby position in the process after Step 1-6. Figure 4 In the embodiment shown in FIG. 1, the control portion 90 instructs the liquid nozzle 20 and the liquid nozzle holding robot arm 61a to move to the standby position, and instructs the drying fluid nozzle 30 to move above the center portion of the substrate W (on the axis center CP) before Step 1-6. Figure 4 In the embodiment shown in FIG. 1, the liquid nozzle 20 and the liquid nozzle holding robot arm 61a are positioned at the standby position in the process after Step 1-6. Figure 4 Figure 4 In the embodiment shown in FIG. 1, the control portion 90 instructs the liquid nozzle 20 and the liquid nozzle holding robot arm 61a to move to the standby position, and instructs the drying fluid nozzle 30 to move above the center portion of the substrate W (on the axis center CP) before Step 1-6.

[0132] In the embodiment shown in FIG. 1, the control portion 90 instructs the liquid nozzle 20 and the liquid nozzle holding robot arm 61a to move to the standby position, and instructs the drying fluid nozzle 30 to move above the center portion of the substrate W (on the axis center CP) before Step 1-6.

[0133] More specifically, the control portion 90 instructs the rotation motor 12 of the substrate holding portion 10 to rotate the substrate W at the third speed, and instructs the drying fluid flow rate control valve 33 to supply the liquid IPA from the drying fluid nozzle 30 positioned above the center portion of the substrate W to the surface 2 of the substrate W for the drying fluid supply time. Further, the control portion 90 instructs the second back surface side flow rate control valve 80 to change the supply amount of the inactive gas. At this time, the third speed is the rotation speed of the substrate W when the drying fluid is supplied to the substrate W in Step 1-6.

[0134] ​The control unit 90 operates according to commands contained in a program stored in the storage device 90a. Specifically, the control unit 90 performs the following steps: issuing a command to the rotary motor 12 of the substrate holding unit 10 to rotate the substrate W at a third speed; issuing a command to the drying fluid flow control valve 33 to supply liquid IPA from the drying fluid nozzle 30 located above the center of the substrate W to the surface 2 of the substrate W for a continuous drying fluid supply time; and issuing a command to the second back-side flow control valve 80 to change the supply amount of inactive gas. These steps are performed while inactive gas is being supplied to the back side 3 from the second back-side nozzle 72.

[0135] One implementation method is a third speed of 10 minutes. -1 In steps 1-6, the flow rate of the liquid IPA supplied is 100 mL / min, the dry fluid supply time is 2 seconds, and the supply flow rate of the inactive gas in steps 1-6 is 50 L / min.

[0136] Steps 1-7 as follows Figure 13 and Figure 14 As shown, while the substrate processing apparatus 1 continues to supply inactive gas to the back surface 3 from the second back surface nozzle 72, it continues to supply drying fluid to the surface 2 of the substrate W from the drying fluid nozzle 30 (that is, it continues to supply drying fluid from the drying fluid nozzle 30), and rotates the substrate W at a predetermined fourth speed. Furthermore, the substrate processing apparatus 1 supplies liquid IPA from the drying fluid nozzle 30 to the surface 2 of the substrate W, and rotates the substrate W at the fourth speed (drying speed), while the nozzles 20, 30, and 50 move from the center of the substrate W (above the center O of the substrate W) toward the periphery of the substrate W (above the periphery of the substrate W) (moving from the center of the substrate W to the radially outer side of the substrate W). Furthermore, while the nozzles 20, 30, and 50 begin to move, the substrate processing apparatus 1 begins to supply inactive gas from the inactive gas nozzle 50 (see reference...). Figure 13 Steps 1-7 involve the substrate processing apparatus 1 moving nozzles 20, 30, and 50 from the center of substrate W toward the periphery of substrate W, and supplying liquid IPA and inactive gas from the drying fluid nozzle 30 and the inactive gas nozzle 50, respectively, onto the surface 2 of substrate W (see reference). Figure 14 ).

[0137] use Figure 4 In the illustrated embodiment, after steps 1-6, the control unit 90 issues a command to the rotary motor 62c, causing the inactive gas nozzle 50 to move to a position adjacent to the drying fluid nozzle 30 above the center portion of the substrate W. At this time, the rotary motor 62c moves the inactive gas nozzle 50 upstream of the moving direction of the drying fluid nozzle 30 in steps 1-7. Unless otherwise specified, the use... Figure 4The procedure at the time of the embodiment shown is the same as that using Figure 1 the embodiment shown, and a description thereof is omitted. The procedure at the time of the embodiment shown is the same as that using Figure 4 At the time of the embodiment shown, the substrate processing apparatus 1 moves the nozzles 30, 50 from the center portion of the substrate W toward the peripheral portion of the substrate W.

[0138] That is, the substrate processing apparatus 1 supplies the liquid IPA to the surface 2 of the substrate W, and supplies the inactive gas from the inactive gas nozzle 50 to the surface 2 of the substrate W in a state where the substrate W is rotated at the fourth speed. One embodiment is that the supply of the inactive gas from the inactive gas nozzle 50 can also be started when the inactive gas nozzle 50 is moved above the center O (for example, on the axis CP). At this time, the so-called fourth speed is the rotation speed of the substrate W in the step 1-7, and is the rotation speed of the substrate W for drying the substrate W. The present embodiment is to use nitrogen as the inactive gas to be ejected from the inactive gas nozzle 50.

[0139] More specifically, the control section 90 continues to supply the liquid IPA from the drying fluid nozzle 30 to the surface 2 of the substrate W in a state where the supply of the inactive gas from the second back surface nozzle 72 to the back surface 3 is continued, and issues an instruction to the rotation motor 12 of the substrate holding section 10 to rotate the substrate W at the fourth speed. Further, the control section 90 supplies the liquid IPA from the drying fluid nozzle 30 to the surface 2 of the substrate W, and rotates the substrate W at the fourth speed, and issues an instruction to the swing motor 62 (the swing motors 62b, 62c in the embodiment shown) of the nozzle moving mechanism 60 to move the nozzles 20, 30, 50 (the nozzles 30, 50 in the embodiment shown) from the center portion of the substrate W (above the center O of the substrate W) toward the peripheral portion of the substrate W (above the peripheral portion of the substrate W) (to the outer side in the radial direction of the substrate W from the center portion of the substrate W). Further, the control section 90 supplies the liquid IPA to the surface 2 of the substrate W, and issues an instruction to the inactive gas flow rate control valve 53 to supply the inactive gas from the inactive gas nozzle 50 to the surface 2 of the substrate W in a state where the substrate W is rotated at the fourth speed. In other words, the control section 90 issues an instruction to the inactive gas flow rate control valve 53 to start the supply of the inactive gas from the inactive gas nozzle 50 to the surface 2 of the substrate W at the same time when the drying fluid nozzle 30 starts to move, or when the inactive gas nozzle 50 is moved above the center O. Figure 4 Figure 4 More specifically, the control section 90 continues to supply the liquid IPA from the drying fluid nozzle 30 to the surface 2 of the substrate W in a state where the supply of the inactive gas from the second back surface nozzle 72 to the back surface 3 is continued, and issues an instruction to the rotation motor 12 of the substrate holding section 10 to rotate the substrate W at the fourth speed. Further, the control section 90 supplies the liquid IPA from the drying fluid nozzle 30 to the surface 2 of the substrate W, and rotates the substrate W at the fourth speed, and issues an instruction to the swing motor 62 (the swing motors 62b, 62c in the embodiment shown) of the nozzle moving mechanism 60 to move the nozzles 20, 30, 50 (the nozzles 30, 50 in the embodiment shown) from the center portion of the substrate W (above the center O of the substrate W) toward the peripheral portion of the substrate W (above the peripheral portion of the substrate W) (to the outer side in the radial direction of the substrate W from the center portion of the substrate W). Further, the control section 90 supplies the liquid IPA to the surface 2 of the substrate W, and issues an instruction to the inactive gas flow rate control valve 53 to supply the inactive gas from the inactive gas nozzle 50 to the surface 2 of the substrate W in a state where the substrate W is rotated at the fourth speed. In other words, the control section 90 issues an instruction to the inactive gas flow rate control valve 53 to start the supply of the inactive gas from the inactive gas nozzle 50 to the surface 2 of the substrate W at the same time when the drying fluid nozzle 30 starts to move, or when the inactive gas nozzle 50 is moved above the center O.

[0140] ​The control section 90 operates in accordance with commands included in a program stored in the storage device 90a. That is, the control section 90 performs the following steps: causes the liquid IPA to be supplied from the drying fluid nozzle 30 to the surface 2 of the substrate W, and issues an instruction to the rotation motor 12 of the substrate holding section 10 to rotate the substrate W at the fourth speed; causes the liquid IPA to be supplied from the drying fluid nozzle 30 to the surface 2 of the substrate W, and rotates the substrate W at the fourth speed, and issues an instruction to the swing motor 62 (or the swing motors 62b, 62c) to move the nozzles 20, 30, 50 (or the nozzles 30, 50) from the center portion of the substrate W toward the peripheral portion of the substrate W; and in a state where the liquid IPA is supplied to the surface 2 of the substrate W and the substrate W is rotated at the fourth speed, issues an instruction to the inactive gas flow control valve 53 to supply the inactive gas from the inactive gas nozzle 50 to the surface 2 of the substrate W (hereinafter, this step is referred to as an inactive gas supply step). One embodiment is that the inactive gas supply step includes a step of starting to supply the inactive gas from the inactive gas nozzle 50 to the surface 2 of the substrate W at the same time as the start of the movement of the drying fluid nozzle 30 by issuing an instruction to the inactive gas flow control valve 53, or a step of starting to supply the inactive gas from the inactive gas nozzle 50 to the surface 2 at the time of the movement of the inactive gas nozzle 50 above the center O by issuing an instruction to the inactive gas flow control valve 53. The above steps are performed in a state where the inactive gas is supplied from the second back nozzle 72 to the back surface 3.

[0141] One embodiment is that the fourth speed is 500 min -1 The flow rate of the liquid IPA supplied in the step 1-7 is 100 mL / min, and the time (drying time) for which the process of the step 1-7 is performed is 28.3 seconds or 30 seconds. The flow rate of the inactive gas supplied from the inactive gas nozzle 50 in the step 1-7 is 150 L / min, and the flow rate of the inactive gas supplied from the second back nozzle 72 is 50 L / min. Further, one embodiment is that the fourth speed is gradually increased in the performance of the step 1-7. One embodiment is that the fourth speed is increased from 10 min -1 to 1000 min -1 (acceleration of rotation 35 rpm / s) in the performance of the step 1-7. One embodiment is that the inactive gas supplied from the inactive gas nozzle 50 is configured to have a larger amount of fluid supplied per unit time than the drying fluid ejected from the drying fluid nozzle 30.

[0142] The substrate processing apparatus 1 of the present embodiment moves the nozzles 20, 30, 50 (or the nozzles 30, 50) once from the center portion of the substrate W (above the center O of the substrate W) toward the peripheral portion of the substrate W (above the peripheral portion of the substrate W) in step 1-7. The substrate processing apparatus 1 of one embodiment can also move the nozzles 20, 30, 50 (or the nozzles 30, 50) again above the center portion of the substrate W after the nozzles 20, 30, 50 (or the nozzles 30, 50) are moved to the peripheral portion of the substrate (above the peripheral portion). Further, the substrate processing apparatus 1 of one embodiment can also move the nozzles 20, 30, 50 (or the nozzles 30, 50) back and forth between the center portion and the peripheral portion of the substrate W a plurality of times. The angular velocity of the robot 61 (or the robots 61b, 61c), that is, the moving speed of the nozzles 20, 30, 50 (or the nozzles 30, 50) is calculated from the time and the number of times of processing allowed.

[0143] In the substrate processing apparatus 1 of one embodiment, when the drying fluid nozzle 30 is positioned above the peripheral portion of the substrate W (for example, a position at which the outermost portion of the liquid IPA sprayed from the drying fluid nozzle 30 hits the end portion of the substrate W), the movement of the drying fluid nozzle 30 can also be stopped for a prescribed time (peripheral portion drying time) (when the drying fluid nozzle 30 is positioned above the peripheral portion of the substrate W, the movement of the drying fluid nozzle 30 is stopped, and the liquid IPA is supplied to the peripheral portion of the substrate W for the peripheral portion drying time) to dry the peripheral portion of the substrate W. Specifically, the control section 90 issues an instruction to the nozzle moving mechanism 60 to stop the movement of the drying fluid nozzle 30 for the peripheral portion drying time when the drying fluid nozzle 30 is positioned above the peripheral portion of the substrate W to dry the peripheral portion of the substrate W. The control section 90 operates in accordance with commands included in a program stored in the storage device 90a. That is, the control section 90 can also perform a step of issuing an instruction to the nozzle moving mechanism 60 to stop the movement of the drying fluid nozzle 30 for the peripheral portion drying time when the drying fluid nozzle 30 is positioned above the peripheral portion of the substrate W to dry the peripheral portion of the substrate. One embodiment is that the above peripheral portion drying time is 1 second to 10 seconds.

[0144] Further, when none of the nozzles 20, 30, 50 is present above the peripheral portion of the substrate W, the flow of air that hits the end portion of the substrate W and the flow of air that does not hit the substrate W are mixed to cause turbulence of the flow of air, which results in the liquid droplets of the liquid IPA and the like flying randomly in the processing chamber 7 to contaminate the substrate processing apparatus 1 (for example, the inner wall of the partition wall 6), but the presence of the drying fluid nozzle 30 above the peripheral portion of the substrate W can more reliably prevent the liquid droplets of the liquid IPA and the like from flying and can more effectively prevent the contamination of the substrate processing apparatus 1.

[0145] Step 1-8 is to stop supplying the liquid IPA when the drying fluid nozzle 30 moves to the end of the substrate W (directly above the end of the substrate W) (refer to Figure 15 ). Specifically, the control section 90 issues an instruction to the drying fluid flow control valve 33 to stop the supply of the liquid IPA when the drying fluid nozzle 30 moves to the end of the substrate W. The control section 90 acts in accordance with the commands contained in the program stored in the storage device 90a. That is, the control section 90 performs the following step: issues an instruction to the drying fluid flow control valve 33 to stop the supply of the liquid IPA when the drying fluid nozzle 30 moves to the end of the substrate W. The movement of the drying fluid nozzle 30 is stopped for the peripheral portion drying time, and when the peripheral portion of the substrate W is dried, the control section 90 issues an instruction to the drying fluid flow control valve 33 to stop the supply of the liquid IPA after the peripheral portion drying time has elapsed.

[0146] Step 1-9 is to stop supplying the inert gas when the inert gas nozzle 50 moves to the end of the substrate W (directly above the end of the substrate W) (refer to Figure 16 ). Specifically, the control section 90 issues an instruction to the inert gas flow control valve 53 to stop the supply of the inert gas when the inert gas nozzle 50 moves to the end of the substrate W. The control section 90 acts in accordance with the commands contained in the program stored in the storage device 90a. That is, the control section 90 performs the following step: issues an instruction to the inert gas flow control valve 53 to stop the supply of the inert gas when the inert gas nozzle 50 moves to the end of the substrate W.

[0147] By steps 1-6 to 1-9, the liquid IPA can be supplied to the entire surface 2 of the substrate W. Therefore, even the adsorbed moisture on the surface 2 of the substrate W is eliminated without being left behind. As a result, the liquid is not left on the surface 2 of the substrate W, and the substrate can be dried.

[0148] By supplying the inert gas at the position where the liquid IPA is supplied, the evaporation of the liquid (drying of the substrate W) can be promoted. The inert gas nozzle 50 ejects the inert gas behind the position where the drying fluid is ejected. In the embodiment described with reference to Figure 5 , the inert gas nozzle 50 is arranged adjacent to the drying fluid nozzle 30, traces the same trajectory as the drying fluid nozzle 30, and moves following the trajectory of the drying fluid nozzle 30. Therefore, as shown in Figure 5 , by arranging the drying fluid nozzle 30 and the inert gas nozzle 50, the inert gas is supplied immediately after the liquid IPA is supplied at the position where the liquid IPA is supplied, and the evaporation of the liquid (drying of the substrate W) is further promoted.

[0149] In this embodiment, after removing the liquid film on surface 2 in steps 1-5, liquid IPA is supplied. Therefore, the amount of drying fluid required for liquid evaporation can be reduced, thereby reducing costs.

[0150] Steps 1-10 are as follows Figure 17 As shown, while the substrate processing apparatus 1 continues to supply inactive gas to the back surface 3 from the second back surface nozzle 72, it moves the inactive gas nozzle 50 above the center of the substrate W and rotates the substrate W at a predetermined fifth speed (processing drying speed) for a predetermined time (processing drying time). In one example, the substrate processing apparatus 1 moves the inactive gas nozzle 50 directly above the center O (on the axis CP). Furthermore, the substrate processing apparatus 1 rotates the substrate W at the fifth speed and supplies inactive gas from the inactive gas nozzle 50 to the surface 2 of the substrate W. Specifically, the inactive gas nozzle 50 sprays inactive gas onto the center of the substrate W, thus supplying inactive gas to the center of the substrate W. Through steps 1-10, liquid evaporation is further promoted, and the substrate W is dried more reliably.

[0151] Specifically, while the inactive gas continues to be supplied from the second rear nozzle 72 to the rear 3, the control unit 90 controls the rotary motor 62 of the nozzle moving mechanism 60 (using... Figure 4 In this embodiment, the rotary motor 62c) issues a command to move the inactive gas nozzle 50 above the center of the substrate W, and issues a command to the rotary motor 12 of the substrate holding unit 10 to rotate the substrate W at a fifth speed. The control unit 90 rotates the substrate W at the fifth speed and issues a command to the inactive gas flow control valve 53 of the inactive gas supply mechanism 54 to supply inactive gas from the inactive gas nozzle 50 to the center of the substrate W. Figure 4 In the implementation, before moving the inactive gas nozzle 50 to above the center of the substrate W, or before moving the inactive gas nozzle 50 to above the center of the substrate W, the control unit 90 issues a command to the rotary motor 62b to move the drying fluid nozzle holding robot arm 61b and the drying fluid nozzle 30 to the aforementioned waiting position.

[0152] The control unit 90 operates according to commands contained in a program stored in the storage device 90a. Specifically, the control unit 90 performs the following steps: issuing a command to the rotary motor 62 (or rotary motor 62c) of the nozzle moving mechanism 60 to move the inactive gas nozzle 50 above the center of the substrate W; issuing a command to the rotary motor 12 to rotate the substrate W at a fifth speed; and, while the substrate W is rotating at the fifth speed, issuing a command to the inactive gas flow control valve 53 to supply inactive gas from the inactive gas nozzle 50 to the center of the substrate W. These steps are performed while inactive gas is being supplied to the back surface 3 from the second back surface nozzle 72.

[0153] One embodiment is that the fifth speed is 1800 min -1 In step 1-10, the flow rate of the inactive gas supplied from the inactive gas nozzle 50 is 150 L / min, the flow rate of the inactive gas supplied from the second back nozzle 72 is 50 L / min, and the process drying time is 10 seconds. After the process drying time elapses, the control section 90 issues an instruction to the inactive gas flow rate control valve 53 and the second back nozzle 72 to stop the supply of the inactive gas. Further, the control section 90 issues an instruction to the rotary motor 12 to stop the rotation of the substrate W. Thus, the drying of the substrate ends.

[0154] One embodiment as shown in Figure 18 , the nozzle moving mechanism 60 can further be provided with a heater 65 for heating the drying fluid. Figure 18 The embodiment shown is to arrange the heater 65 adjacent to the drying fluid nozzle 30. By heating the drying fluid nozzle 30 with the heater 65, the drying fluid ejected from the drying fluid nozzle 30 can be heated. Thus, the evaporation time of the organic solvent such as IPA can be shortened. One embodiment can also directly heat the organic solvent by a warming device not shown.

[0155] Further, one embodiment can also heat the substrate W. One embodiment in order to heat the substrate W, the substrate holding section 10 can also be provided with a heater 65, or a heater 65 can also be arranged below the substrate W. Further, one embodiment is that the second back side supply line 76 can also be connected to a hot water supply source not shown instead of the inactive gas supply source, and the substrate processing device 1 can also be configured to supply hot water from the second back nozzle 72 instead of the inactive gas to the back surface 3. By heating the substrate W, the drying time of the organic solvent can be shortened.

[0156] Figure 19 is a perspective view schematically showing another embodiment of the substrate processing device 1. Since the configuration of the present embodiment not particularly mentioned is the same as that of the embodiments described with reference to Figure 1 , Figure 2 and Figure 5 , the repeated description thereof is omitted. As shown in Figure 19 , the substrate processing device 1 of the present embodiment is further provided with a drying fluid generating device 35, and the end of the drying fluid supply line 31 is connected to the drying fluid generating device 35. The drying fluid generating device 35 is a device for vaporizing a liquid drying fluid (organic solvent). The drying fluid gas generated by the drying fluid generating device 35 is supplied from the drying fluid generating device 35 to the drying fluid nozzle 30 through the drying fluid supply line 31. The configuration of Figure 3 and Figure 4 can also be applied to the present embodiment.

[0157] Figure 20 is a schematic diagram of a dry fluid generating device 35. The dry fluid generating device 35 is provided with a gas-liquid mixing section 36 for mixing a liquid dry fluid (organic solvent) and a carrier gas, and a heater 37 for heating a mixed fluid of the dry fluid and the carrier gas discharged from the gas-liquid mixing section 36. The mixed fluid of the organic solvent and the carrier gas is generated by flowing the liquid organic solvent and the carrier gas into the gas-liquid mixing section 36. The dry fluid generating device 35 generates the gaseous organic solvent by heating the mixed fluid with the heater 37. An example of the carrier gas is helium.

[0158] The gaseous (gaseous dry fluid) containing the gaseous organic solvent having a relatively high concentration is output from the dry fluid generating device 35. One embodiment is that the content ratio (concentration) of the organic solvent in the dry fluid is 8 to 30%. Therefore, by using the dry fluid as the gaseous containing the gaseous organic solvent having a relatively high concentration, the evaporation of the liquid on the surface 2 is promoted. This embodiment also forms the downflow of air by the air exchange mechanism 8 and the exhaust duct 9. Therefore, by actively removing the evaporated liquid from the substrate W, the evaporation is further promoted, and even if the dry fluid contains the organic solvent having a relatively high concentration, the explosion is prevented.

[0159] One embodiment is that the substrate processing device 1 can also be provided with a warming device for warming the dry fluid supply line 31. In order to output the heated dry fluid from the dry fluid generating device 35, by warming the dry fluid supply line 31, the condensation of water droplets in the dry fluid supply line 31 is prevented.

[0160] Next, other processing methods of the substrate W are described. Figure 21 is a flowchart showing another embodiment of the processing method of the substrate W. The dry fluid of this embodiment is a gas containing a gaseous IPA (vaporized IPA) having a high concentration, which is generated by the dry fluid generating device 35 or the like. The dry fluid used in the processing method of this embodiment described below is simply referred to as vaporized IPA. One embodiment of the processing method described below uses the substrate processing device 1 described with reference to Figure 19 and Figure 20 .

[0161] One embodiment of the dry fluid can also be a gas containing a gaseous organic solvent other than IPA (for example, an alcohol-containing fluorine-based solvent) having a high concentration. The organic solvent of the gas used as the dry fluid is mixed with water and has a property of evaporating faster than water.

[0162] Steps 2-1 to 2-4 are the same as those described with reference to Figure 7 to Figure 10The processes explained (steps 1-1 to step 1-4) are the same, so the repeated explanation thereof is omitted.

[0163] Since the detailed contents of step 2-5 not particularly explained are the same as those of step 1-5, the repeated explanation thereof is omitted. The second speed in step 2-5 in one embodiment is 300 min -1 , the spin-up time is 3.1 seconds, and the supply flow rate of the non-reactive gas in step 2-5 is 2 L / min. Step 2-5 is shown in FIG. 6. Step 2-5 is a process of further thinning the liquid film on the surface 2 of the substrate W from the state after the implementation of step 2-4 by rotating the substrate W at the second speed. More specifically, the circular thin film region of the central portion of the surface 2 of the substrate W explained in step 1-4 is further enlarged and thinned. One embodiment can also spin off the liquid film on the surface 2 of the substrate W to expose the surface 2 in step 2-5 by adjusting the second speed and / or the spin-up time, as in step 1-5. The exposure of the surface 2 can be the exposure of a part of the surface 2 (for example, the exposure of the central portion of the surface 2), or the exposure of the entire surface 2. Figure 22

[0164] Since the detailed contents of step 2-6 not particularly explained are the same as those of step 1-6, the repeated explanation thereof is omitted. Step 2-6 is shown in FIG. 7. Step 2-6 is a process of further drying the liquid film on the surface 2 of the substrate W by rotating the substrate W at a third speed and supplying the vaporized IPA from the drying fluid nozzle 30 located above the central portion of the substrate W to the surface 2 of the substrate W for a drying fluid supply time. Figure 23 Figure 23 The processes explained (steps 1-1 to step 1-4) are the same, so the repeated explanation thereof is omitted.

[0165] The third speed in step 2-6 in one embodiment is 300 min -1 , the flow rate of the vaporized IPA supplied in step 2-6 is 5 g / min, the drying fluid supply time is 3 seconds, and the supply flow rate of the non-reactive gas in step 2-6 is 2 L / min. One embodiment is that the third speed in step 2-6 can also be increased from 100 min -1 to 300 min -1 (rotation acceleration 100 rpm / s). Specifically, the third speed is increased from 100 min -1 ​​accelerates to 300 min"1, and the drying fluid nozzle 30 is stationary over the center portion of the substrate W for 2 seconds, the vaporized IPA is supplied to the surface 2 of the substrate W for 2 seconds in a state where the third speed is fixed to 300 min"1 -1 The third speed is increased from 100 min -1 to 300 min -1 The drying fluid supply time is also 3 seconds.

[0166] Step 2-6 is to supply the drying fluid (vaporized IPA) to the formed thin film (or to the surface 2 from which the liquid film is removed). As a result, the liquid remaining (adsorbed) on the substrate W in Step 2-5 is mixed with the vaporized IPA and evaporates together with the vaporized IPA. Further, by supplying the vaporized IPA to the formed thin film (or to the surface 2 from which the liquid film is removed), the amount of the drying fluid required for the evaporation of the liquid can be reduced.

[0167] Since the procedure of Step 2-7 is the same as that of Step 1-7 unless otherwise specified, the repeated description thereof is omitted. Step 2-7 is different from Step 1-7 in that the inactive gas is not supplied to the surface 2 of the substrate W from the inactive gas nozzle 50. That is, the substrate processing apparatus 1 moves the nozzles 20, 30, 50 from the center portion of the substrate W toward the peripheral portion of the substrate W, and supplies only the vaporized IPA to the surface 2 of the substrate W. In the case of using the embodiment shown in FIG. 6, the inactive gas nozzle holding arm 61c is positioned at the waiting position (outside the substrate holding portion 10), the substrate processing apparatus 1 moves the drying fluid nozzle 30 from the center portion of the substrate W toward the peripheral portion of the substrate W, and supplies the vaporized IPA to the surface 2 of the substrate W. Figure 4

[0168] Even in the present embodiment, as described in Step 1-7, the substrate processing apparatus 1 can move the drying fluid nozzle 30 to the center portion of the substrate W again after the drying fluid nozzle 30 is moved to the peripheral portion of the substrate (over the peripheral portion), and can move the drying fluid nozzle 30 back and forth between the center portion and the peripheral portion of the substrate W a plurality of times. In one embodiment, as described in Step 1-7, the substrate processing apparatus 1 can stop the movement of the drying fluid nozzle 30 for a prescribed time (peripheral portion drying time) while the drying fluid nozzle 30 is positioned over the peripheral portion of the substrate W (the movement of the drying fluid nozzle 30 is stopped while the drying fluid nozzle 30 is positioned over the peripheral portion of the substrate W, and the vaporized IPA is supplied to the peripheral portion of the substrate W for the peripheral portion drying time) to dry the peripheral portion of the substrate W.

[0169] ​The same procedure as steps 1-7 can also be implemented in one embodiment. That is, one embodiment is that the substrate processing apparatus 1 moves the nozzles 20, 30, 50 (using the embodiment shown in FIG. 6, the nozzles 30, 50) from the center portion of the substrate W toward the peripheral portion of the substrate W, and supplies the vaporized IPA and the non-reactive gas from the drying fluid nozzle 30 and the non-reactive gas nozzle 50, respectively, to the surface 2 of the substrate W. One embodiment can also start supplying the non-reactive gas from the non-reactive gas nozzle 50 at the same time as the nozzles 20, 30, 50 (or the nozzles 30, 50) start moving, or can start supplying the non-reactive gas from the non-reactive gas nozzle 50 when the non-reactive gas nozzle 50 moves above the center O (e.g., above the axis CP). Figure 4 The same procedure as steps 1-7 can also be implemented in one embodiment. That is, one embodiment is that the substrate processing apparatus 1 moves the nozzles 20, 30, 50 (using the embodiment shown in FIG. 6, the nozzles 30, 50) from the center portion of the substrate W toward the peripheral portion of the substrate W, and supplies the vaporized IPA and the non-reactive gas from the drying fluid nozzle 30 and the non-reactive gas nozzle 50, respectively, to the surface 2 of the substrate W. One embodiment can also start supplying the non-reactive gas from the non-reactive gas nozzle 50 at the same time as the nozzles 20, 30, 50 (or the nozzles 30, 50) start moving, or can start supplying the non-reactive gas from the non-reactive gas nozzle 50 when the non-reactive gas nozzle 50 moves above the center O (e.g., above the axis CP).

[0170] In one embodiment, the fourth speed in steps 2-7 can also be increased from 300 min -1 to 1800 min -1 (acceleration of 50 rpm / s) during implementation of steps 2-7. Further, one embodiment has a time (drying time) of 30 seconds for implementing the procedure of steps 2-7, a supply flow rate of the vaporized IPA supplied in step 2-6 of 5 g / min, and a supply flow rate of the non-reactive gas from the second back nozzle 72 of 50 L / min.

[0171] Since the procedure of step 2-8 is the same as step 1-8, the repeated description thereof is omitted. The same procedure as step 1-9 is also implemented in one embodiment when the same procedure as step 1-7 is implemented in step 2-7. In one embodiment, the control section 90 can also issue an instruction to the rotary motor 62 to stop the movement of the nozzles 20, 30, 50 and issue an instruction to the non-reactive gas flow rate control valve 53 to supply the non-reactive gas to the peripheral portion of the substrate W when the drying fluid nozzle 30 moves to the end portion of the substrate W. Using the embodiment shown in FIG. 6, the control section 90 continues to move the drying fluid nozzle 30 when the drying fluid nozzle 30 moves to the end portion of the substrate W, and issues an instruction to the rotary motor 62c to move the non-reactive gas nozzle 50 above the peripheral portion of the substrate W. The control section 90 issues an instruction to the non-reactive gas flow rate control valve 53 to supply the non-reactive gas to the peripheral portion of the substrate W after moving the non-reactive gas nozzle 50 above the peripheral portion of the substrate W. Figure 4

[0172] That is, even in this embodiment, nitrogen is still used as the non-reactive gas supplied from the non-reactive gas nozzle 50. In one embodiment, the rotation speed of the substrate W (the fourth speed) when the non-reactive gas is supplied from the non-reactive gas nozzle 50 to the peripheral portion of the substrate W is 1800 min -1 ​The supply time of the non-reactive gas from the non-reactive gas nozzle 50 was 1 second, the supply flow rate of the non-reactive gas from the non-reactive gas nozzle 50 was 100 L / min, and the supply flow rate of the non-reactive gas from the second back nozzle 72 was 50 L / min.

[0173] The liquid evaporates with the vaporized IPA. The vaporized IPA is supplied to the entire surface 2 of the substrate W by steps 2-6 to 2-8. Therefore, even the adsorbed moisture on the substrate W is not left and can be eliminated. As a result, the substrate can be dried without leaving the liquid on the surface 2 of the substrate W.

[0174] Since step 2-9 is the same as step 1-10 without particular explanation, the repeated explanation is omitted. The fifth speed of one embodiment is 1800 min -1 The flow rate of the non-reactive gas supplied from the non-reactive gas nozzle 50 was 100 L / min, the flow rate of the non-reactive gas supplied from the second back nozzle 72 was 50 L / min, and the processing drying time was 5 seconds.

[0175] The above-described processing method of the substrate W, once a film of the liquid is formed on the entire surface of the substrate W (the entire surface of the surface 2 of the substrate W), the liquid film on the substrate W is thinned in the center portion by rotating the substrate W at the second speed, or the liquid film is removed, and then the drying fluid is supplied to the substrate. As a result, even the adsorbed moisture on the substrate is not left and can be eliminated. Therefore, the above-described processing method of the substrate W can dry the substrate while suppressing the adsorbed moisture from being left on the substrate W. As a result, the removal rate of the left adsorbed moisture on the substrate W can be improved.

[0176] Further, in highlighting the demand that even if the same substrate, the surface within, still make hydrophobic region and hydrophilic region both exist, or is to implement a variety of manufacturing procedures with the same semiconductor manufacturing device, because the property state of the substrate surface provided with the drying process diversifies, when the various substrates are continuously dried with the past substrate drying device, the concern that the drying quality (removal rate of moisture for rinsing) of each substrate deviates is newly generated. In other words, because the past substrate drying method is to remove a certain degree of moisture from the substrate in advance, and it is desired to remove the moisture not removed in advance with the dry gas, the moisture removal rate of each substrate is disorderly, and cannot be removed efficiently. The above-described each processing method is to focus on the fact that even if a certain degree of moisture is removed, the moisture distribution on the surface of each substrate is different, and once a film of liquid is formed on the entire surface of the substrate W, the above-described moisture distribution deviation of each substrate can be eliminated. Further, by increasing the rotation speed (spinning speed) for removing the liquid film, the thinning of the central portion of the liquid film in each substrate and the removal deviation of the liquid film can also be suppressed. Further, after the substrate W is rotated at the spinning speed, by supplying the drying fluid, the moisture removal rate deviation of each substrate can be suppressed.

[0177] The program for causing the control section 90 to execute the above-described each step is recorded in a recording medium that is non-transitory and computer-readable, and the control section 90 is provided via the recording medium. Further, the program can also be input to the control section 90 via a communication network such as the Internet or a local area network. The recording medium records a program for processing the substrate W, and the program acts on a computer.

[0178] When a concave-convex pattern is formed on the surface of the processed substrate, by the surface tension acting between the liquid and the side surface of the convex portion of the above-described concave-convex pattern when the substrate is rotated at high speed to spin off the liquid film formed on the surface of the substrate, the convex portion of the concave-convex pattern can collapse. This phenomenon is particularly likely to occur when the concave-convex pattern has a large aspect ratio. Therefore, when drying the substrate on which the above-described concave-convex pattern is formed on the surface, in the state that the liquid film is formed on the surface of the substrate, before spinning off the above-described liquid film, it is necessary to mix the drying fluid such as IPA with the liquid, and evaporate the liquid together with the drying fluid (replace the liquid with the drying fluid).

[0179] As described above, the substrate W of the present embodiment is a substrate polished by a chemical mechanical polishing process (CMP) and has a surface 2 subjected to a planarization process. The substrate processing apparatus 1 processes a substrate subjected to a planarization process by such a chemical mechanical polishing process and applied to processing in a wet state. Even if the central portion of a liquid film on the substrate is thinned or the liquid film is flung off and removed while the substrate is rotated at high speed when the substrate processing apparatus 1 processes the substrate in a wet state, the collapse of the convex portion described above does not occur. Therefore, a liquid film can be formed on the substrate after CMP, the central portion of the liquid film can be thinned or the liquid film can be flung off and removed, and then a dry fluid can be supplied. As a result, the amount of the dry fluid used can be reduced, and even adsorbed moisture on the substrate can be eliminated.

[0180] Figure 24 FIG. 10 is a view showing another embodiment of the substrate processing apparatus 1. Figure 24 FIG. 11 is a view depicting part of the constituent elements of the substrate processing apparatus 1. As shown in FIG. 11, the substrate processing apparatus 1 can further include a cover 200 disposed around the substrate W held by the substrate holding section 10. Figure 24 The cover 200 has a cylindrical shape disposed concentrically with the substrate W and is fixed to the plurality of chucks 11 of the substrate holding section 10. The cover 200 receives liquid scattered from the rotating substrate W by centrifugal force.

[0181] The cover 200 is disposed on the radial direction outside of the substrate W in a manner to surround the entire circumference of the substrate W. The control section 90 issues an instruction to the substrate holding section 10, and the cover 200 fixed to the chuck 11 is rotated in the same direction of rotation as the substrate W and at the same rotational speed as the substrate W when the substrate W held by the chuck 11 is rotated around the center axis CP of the substrate holding section 10. Because Figure 24 The embodiment shown in FIG. 11 is an embodiment in which the cover 200 is rotated at the same rotational speed as the rotational speed of the substrate W. As a result, the cover 200 can reliably capture liquid scattered from the rotating substrate W, and adverse effects on the drying process due to liquid rebound can be prevented.

[0182] Figure 25 FIG. 12 is a view showing still another embodiment of the substrate processing apparatus 1. Figure 25 FIG. 13 is a view depicting part of the constituent elements of the substrate processing apparatus 1. As shown in FIG. 13, the substrate processing apparatus 1 can further include a cover 200 rotated by a cover rotation mechanism 202. Figure 25 The embodiment shown in FIG. 13 is an embodiment in which the cover 200 is rotated by the cover rotation mechanism 202. Figure 25 The embodiment shown in FIG. 13 is an embodiment in which the cover 200 is rotated by the cover rotation mechanism 202.

[0183] As shown in FIG. 13, the substrate processing apparatus 1 can further include a cover 200 rotated by a cover rotation mechanism 202. Figure 25As shown, the cover rotating mechanism 202 is provided with: a cover motor 201; and a transmission device 205 that transmits the rotational force of the cover motor 201 to the cover 200. More specifically, the transmission device 205 is provided with: a gear 204 fixed to the cover motor 201; and a tooth 203 installed to the outer circumferential surface of the cover 200 and engaged with the gear 204. When the cover motor 201 rotates, the cover 200 rotates via the transmission device 205 (i.e., the tooth 203 and the gear 204).

[0184] The rotation motor 12 and the cover motor 201 are electrically connected to a control section 90. The control section 90 issues an instruction to the rotation motor 12 and the cover motor 201 to rotate the cover 200 in the same rotational direction as the substrate W and at the same rotational speed as the substrate W. In this way, the control section 90 rotates the cover 200 in synchronization with the rotation of the substrate W held by the substrate holding section 10.

[0185] Figure 25 In the embodiment shown, the transmission device 205 is a combination of the tooth 203 and the gear 204, but the configuration of the transmission device 205 is not limited to this embodiment. In one embodiment, the transmission device 205 is a combination of a motor pulley fixed to the cover motor 201, a cover pulley installed to the outer circumferential surface of the cover 200, and a belt wound around the motor pulley and the cover pulley, but is not shown.

[0186] Figure 26 is a schematic view showing one embodiment of a substrate processing system 100 provided with the substrate processing apparatus 1. As shown in Figure 26 As shown, the substrate processing system 100 is provided with: a substantially rectangular-shaped rack 101; and a load port 102 that loads and houses a substrate cassette. The load port 102 is disposed adjacent to the rack 101. The load port 102 can load an open cassette, a SMIF (Standard Manufacturing Interface) cassette, or a FOUP (Front Opening Unified Pod). The SMIF, FOUP is a sealed container that houses a substrate cassette inside and maintains an environment independent from the outside space by covering with a partition wall.

[0187] Inside the rack 101, there are housed: a plurality of (four in this embodiment) polishing units 104a to 104d; a first cleaning unit 106 and a second cleaning unit 108 that clean the polished substrate; and a drying unit 120. The polishing units 104a to 104d are arranged in the length direction of the substrate processing system, and the cleaning units 106, 108 and the drying unit 120 are also arranged in the length direction of the substrate processing system 100. The drying unit 120 is provided with the substrate processing apparatus 1 described above.

[0188] A first substrate transfer robot 112 is disposed in a region surrounded by the load port 102, the polishing units 104a, and the drying unit 120, and a substrate transfer unit 114 is disposed in parallel with the polishing units 104a to 104d. The first substrate transfer robot 112 receives a substrate before polishing from the load port 102 and delivers it to the substrate transfer unit 114, and receives a substrate after processing (after drying) from the drying unit 120 and delivers it back to the load port 102. The substrate transfer unit 114 transfers the substrate received from the first substrate transfer robot 112 and performs handover of the substrate between the polishing units 104a to 104d. Each of the polishing units supplies a polishing liquid on a polishing surface and polishes the surface of the substrate by sliding contact of the substrate with the polishing surface.

[0189] Between the first cleaning unit 106 and the second cleaning unit 108, a second substrate transfer robot 116 is disposed which transfers a substrate between these cleaning units 106, 108 and the substrate transfer unit 114, and between the second cleaning unit 108 and the substrate processing apparatus 1, a third substrate transfer robot 118 is disposed which transfers a substrate between these units 108, 120.

[0190] The first cleaning unit 106 is a substrate cleaning apparatus which uses a roll sponge to rub both the front and back surfaces of a substrate in the presence of a chemical liquid. The second cleaning unit 108 is a substrate cleaning apparatus which uses a two-fluid type.

[0191] The substrate is polished by at least one of the polishing units 104a to 104d. The polished substrate is cleaned by the first cleaning unit 106 and the second cleaning unit 108, and the cleaned substrate is further processed by the substrate processing apparatus 1.

[0192] In one embodiment, the substrate processing system 100 can also have three cleaning units, and can further have a defect inspection apparatus (not shown) which inspects defects (impurities and / or water marks) contained in the substrate.

[0193] Figure 26 The illustrated example is one in which the control section 90 is disposed inside the frame 101 outside the drying unit 120, but one embodiment can also dispose the control section 90 inside the drying unit 120. By disposing the control section 90 inside the drying unit 120 (in the vicinity of the substrate processing apparatus 1), the load on the control section 90 can be reduced, and communication delay can be suppressed.

[0194] Further, one embodiment is that the control section 90 can be arranged in the cleaning units 106, 108, or in the polishing units 104a to 104d. Further, one embodiment can be arranged outside the rack 101 in a factory where the substrate processing system 100 is installed. Further, one embodiment is that the control section 90 can be constituted by a plurality of computers which are arranged dispersedly in the factory.

[0195] In other words, at least one computer constituting the control section 90 can be arranged in the cleaning units 106, 108, in the vicinity of the cleaning units 106, 108, or in the substrate processing system 100 away from the cleaning units 106, 108. Further, one embodiment can arrange at least one computer constituting the control section 90 on one production line of a plurality of substrate processing systems in a semiconductor substrate manufacturing factory. Further, one embodiment can arrange a plurality of computers constituting the control section 90 on a plurality of production lines of a plurality of substrate processing systems. Further, one embodiment can arrange at least one computer constituting the control section 90 in a production line monitoring place or a production line monitoring system in the factory. Further, one embodiment can be arranged in a plurality of factory monitoring places and a factory monitoring system in a semiconductor substrate manufacturing company, or in a CMP device manufacturing and installing company.

[0196] The above-described embodiments are described for the purpose of enabling a person skilled in the art to which the present application pertains to carry out the present application. For example, the embodiments can be applied to processing of a substrate subjected to a polishing process, a substrate subjected to a back surface polishing (or back surface grinding) process, or drying processing of a substrate subjected to a coating process by a coating device. A person skilled in the art can of course carry out various modifications of the above-described embodiments, and the technical idea of the present application can be applied to other embodiments. Therefore, the present application is not limited to the described embodiments, but is construed in the broadest scope defined by the technical idea through the claims.

[0197] Industrial Applicability

[0198] The present application can be applied to a substrate processing method and a substrate processing device for processing a substrate. In addition, the present application can be applied to a computer-readable recording medium in which a program for executing such a substrate processing method is recorded.

[0199] Explanation of Symbols

[0200] 1: Substrate processing device

[0201] 2: Surface

[0202] 3: Back surface

[0203] 6: Partition wall

[0204] 6a: Clean air inlet

[0205] 7: processing chamber

[0206] 8: air exchange mechanism

[0207] 8A: fan

[0208] 8B: filter

[0209] 9: exhaust duct

[0210] 10: substrate holding portion

[0211] 11: chuck

[0212] 12: rotary motor

[0213] 20: liquid nozzle

[0214] 21: liquid supply line

[0215] 23: liquid flow control valve

[0216] 24: liquid supply mechanism

[0217] 30: drying fluid nozzle

[0218] 31: drying fluid supply line

[0219] 33: drying fluid flow control valve

[0220] 34: drying fluid supply mechanism

[0221] 35: drying fluid generating device

[0222] 36: gas-liquid mixing portion

[0223] 37: heater

[0224] 50: inert gas nozzle

[0225] 51: inert gas supply line

[0226] 53: inert gas flow control valve

[0227] 54: inert gas supply mechanism

[0228] 60: nozzle moving mechanism

[0229] 60a: liquid nozzle moving mechanism

[0230] 60b: drying fluid nozzle moving mechanism

[0231] 60c: inert gas nozzle moving mechanism

[0232] 61: robot arm

[0233] 61a: liquid nozzle holding robot arm

[0234] 61b: dry fluid nozzle holding robot arm

[0235] 61c: non-reactive gas nozzle holding robot arm

[0236] 62: rotary motor

[0237] 62a, 62b, 62c: rotary motor

[0238] 63: rotary shaft

[0239] 63a, 63b, 63c: rotary shaft

[0240] 65: heater

[0241] 69: first backside supply mechanism

[0242] 70: second backside supply mechanism

[0243] 71: first backside nozzle

[0244] 72: second backside nozzle

[0245] 75: first backside supply line

[0246] 76: second backside supply line

[0247] 79: first backside flow control valve

[0248] 80: second backside flow control valve

[0249] 90: control section

Claims

1. A substrate processing apparatus that processes a substrate, characterized by comprising: Possess: A substrate holding section that holds and rotates the substrate; A liquid supply mechanism that supplies liquid from a liquid nozzle to the substrate; A drying fluid supply mechanism that supplies drying fluid from a drying fluid nozzle to the substrate; A nozzle moving mechanism that moves the liquid nozzle and the drying fluid nozzle; and A control section that controls the operation of the substrate holding section, the liquid supply mechanism, and the drying fluid supply mechanism, The control section is configured to: issue an instruction to the substrate holding section to rotate the substrate at a first speed, issue an instruction to the liquid supply mechanism to supply the liquid from the liquid nozzle located above the center portion of the substrate to the substrate for a prescribed time to form a liquid film on the entire surface of the substrate, issue an instruction to the liquid supply mechanism to stop the supply of the liquid, after rotating the substrate at the first speed, issue an instruction to the substrate holding section to rotate the substrate at a second speed, after rotating the substrate at the second speed, issue an instruction to the substrate holding section to rotate the substrate at a third speed, and issue an instruction to the drying fluid supply mechanism to supply drying fluid from the drying fluid nozzle located above the center portion of the substrate to the substrate for a prescribed time, second, continue to supply the drying fluid from the drying fluid nozzle, and issue an instruction to the nozzle moving mechanism to move the drying fluid nozzle from the center portion of the substrate toward the peripheral portion of the substrate, The first speed includes a liquid film formation speed for forming a film of the liquid on the substrate, and a thin film formation speed for thinning the central portion of the film, The control section is configured to, after rotating the substrate at the liquid film formation speed, issue an instruction to the substrate holding section to rotate the substrate at the thin film formation speed, The thin film formation speed is faster than the liquid film formation speed. The second speed is faster than the first speed.

2. The substrate processing apparatus of claim 1, wherein The control section is configured to, when the drying fluid nozzle is located above the peripheral portion of the substrate, issue an instruction to the nozzle moving mechanism to stop moving the drying fluid nozzle for a prescribed time to dry the peripheral portion of the substrate.

3. The substrate processing apparatus according to claim 1 or 2, wherein Further provided is a non-active gas supply mechanism that supplies non-active gas from a non-active gas nozzle to the substrate, 4. The substrate processing apparatus according to any one of claims 1 and 2, wherein The control section is configured to, after drying the peripheral portion of the substrate with the drying fluid supplied from the drying fluid nozzle located above the peripheral portion of the substrate, issue an instruction to the nozzle moving mechanism to move the non-active gas nozzle so that the non-active gas nozzle is located above the center portion of the substrate, and issue an instruction to the non-active gas supply mechanism to supply the non-active gas from the non-active gas nozzle to the center portion of the substrate. ​ 5. The substrate processing apparatus according to any one of claims 1 and 2, wherein Further provided is a non-active gas supply mechanism that supplies non-active gas from a non-active gas nozzle to the substrate, The control section is configured to, in a state in which the drying fluid is supplied to the substrate and the substrate is rotating at a fourth speed, instruct the non-active gas supply mechanism to supply non-active gas from the non-active gas nozzle to the substrate, and instruct the nozzle movement mechanism to move the non-active gas nozzle from the center portion of the substrate toward the peripheral portion of the substrate.

6. The substrate processing apparatus of claim 5, wherein The non-active gas nozzle is disposed behind the drying fluid nozzle in the movement direction of the drying fluid nozzle and the non-active gas nozzle.

7. The substrate processing apparatus of claim 4, wherein The nozzle movement mechanism includes one robot that holds the liquid nozzle, the drying fluid nozzle, and the non-active gas nozzle.

8. The substrate processing apparatus according to any one of claims 1 and 2, wherein The nozzle movement mechanism includes a heater disposed adjacent to the drying fluid nozzle.

9. The substrate processing apparatus according to any one of claims 1 and 2, wherein The drying fluid supply mechanism further includes an electrically conductive drying fluid supply line connected to the drying fluid nozzle.

10. The substrate processing apparatus of claim 1 or 2, wherein Further provided are: a gas exchange mechanism disposed above the substrate holding section; and an exhaust duct; The gas exchange mechanism and the exhaust duct are configured to form a downward flow of air.

11. The substrate processing apparatus of claim 1 or 2, wherein The drying fluid is a liquid organic solvent.

12. The substrate processing apparatus of claim 1 or 2, wherein The drying fluid is a gas containing a gaseous organic solvent, The organic solvent content of the drying fluid is 8% to 30%.

13. The substrate processing apparatus of claim 1 or 2, wherein The substrate processing apparatus includes a cover disposed around the substrate held by the substrate holding section, The cover is configured to rotate in the same direction as the substrate and at the same speed as the substrate.

14. The substrate processing apparatus of claim 13, wherein, The substrate holding section includes a plurality of chucks that hold the peripheral portion of the substrate, The cover is fixed to the plurality of chucks.

15. The substrate processing apparatus of claim 13, wherein, The substrate processing apparatus includes a cover rotation mechanism that rotates the cover, The cover rotation mechanism includes: a cover motor; and a transmission device that transmits the rotational force of the cover motor to the cover.

16. A non-transitory computer-readable recording medium that records a program for causing a computer to function as a substrate processing apparatus that processes a substrate, the recording medium recording a program for causing a computer to execute the steps of: instructing a substrate holding section to rotate a substrate at a first speed, and instructing a liquid supply mechanism to supply liquid from a liquid nozzle disposed above the center portion of the substrate to the substrate for a prescribed period of time to form a liquid film on the entire surface of the substrate W; instructing the liquid supply mechanism to stop supplying the liquid; after rotating the substrate at the first speed, instructing the substrate holding section to rotate the substrate at a second speed; after rotating the substrate at the second speed, instructing the substrate holding section to rotate the substrate at a third speed, and instructing a drying fluid supply mechanism to supply drying fluid from a drying fluid nozzle to the substrate for a prescribed period of time; and continuing to supply the drying fluid from the drying fluid nozzle while instructing the nozzle moving mechanism to move the drying fluid nozzle from the center portion of the substrate toward the peripheral portion of the substrate, the first speed includes a liquid film forming speed for forming a film of the liquid on the substrate and a thin film forming speed for thinning a central portion of the film, the program causes the computer to further execute the step of instructing the substrate holding portion to rotate the substrate at the thin film forming speed after rotating the substrate at the liquid film forming speed, the thin film forming speed is a speed faster than the liquid film forming speed.

17. The non-transitory computer-readable recording medium of claim 16, wherein, the second speed is a speed faster than the first speed.

18. The non-transitory computer-readable recording medium of claim 16 or 17, wherein, the program causes the computer to further execute the step of instructing the nozzle moving mechanism to stop moving the drying fluid nozzle for a prescribed time while the drying fluid nozzle is positioned above the peripheral portion of the substrate, thereby drying the peripheral portion of the substrate.

19. The non-transitory computer-readable recording medium of claim 16 or 17, wherein, the program causes the computer to further execute the steps of: drying the peripheral portion of the substrate with the drying fluid supplied from the drying fluid nozzle positioned above the peripheral portion of the substrate, and instructing the non-active gas nozzle moving mechanism to move the non-active gas nozzle so that the non-active gas nozzle is positioned above the central portion of the substrate, and 20. The non-transitory computer-readable recording medium of claim 16 or 17, wherein, instructing the non-active gas supply mechanism to supply the non-active gas from the non-active gas nozzle to the central portion of the substrate. the program causes the computer to further execute the step of instructing the non-active gas supply mechanism to supply the non-active gas from the non-active gas nozzle to the surface of the substrate while the drying fluid is supplied to the substrate and the substrate is rotated at a fourth speed.

21. A substrate processing method, which is a method of processing a substrate, characterized by forming a film of a liquid on the entire surface of the substrate by rotating the substrate at a first speed and continuously supplying the liquid from a liquid nozzle positioned above the central portion of the substrate for a prescribed time, stopping the supply of the liquid, rotating the substrate at the first speed and then rotating the substrate at a second speed, rotating the substrate at the second speed and then rotating the substrate at a third speed while continuously supplying a drying fluid from a drying fluid nozzle positioned above the central portion of the substrate to the substrate for a prescribed time, second, continuing to supply the drying fluid from the drying fluid nozzle while moving the drying fluid nozzle from the central portion of the substrate toward the peripheral portion of the substrate, the first speed includes a liquid film forming speed for forming a film of the liquid on the substrate and a thin film forming speed for thinning a central portion of the film, the substrate processing method further includes the step of rotating the substrate at the thin film forming speed after rotating the substrate at the liquid film forming speed, the thin film forming speed is a speed faster than the liquid film forming speed.

22. The substrate processing method of claim 21, wherein, The second speed is faster than the first speed.

23. The substrate processing method according to either one of claims 21 and 22, wherein Further comprising a process of stopping the movement of the drying fluid nozzle while the drying fluid nozzle is positioned above the peripheral portion of the substrate, and continuously supplying the drying fluid to the peripheral portion of the substrate for a prescribed time to dry the peripheral portion of the substrate.

24. The substrate processing method according to either one of claims 21 and 22, wherein Further comprising a process of stopping the supply of the drying fluid from the drying fluid nozzle after the drying fluid supplied from the drying fluid nozzle positioned above the peripheral portion of the substrate dries the peripheral portion of the substrate, and moving the inactive gas nozzle positioned above the central portion of the substrate, supplying the inactive gas from the inactive gas nozzle to the central portion of the substrate.

25. The substrate processing method according to any one of claims 21 and 22, wherein Further comprising a process of moving the drying fluid nozzle and the inactive gas nozzle from the central portion of the substrate toward the peripheral portion of the substrate while supplying the inactive gas from the inactive gas nozzle to the substrate.

26. The substrate processing method of claim 25, wherein, The process of supplying the inactive gas from the inactive gas nozzle to the substrate comprises a process of jetting the inactive gas behind the jetting position of the drying fluid in the moving direction of the drying fluid nozzle and the inactive gas nozzle.

27. The substrate processing method as recited in Claim 21 or 22, wherein, The drying fluid is a liquid organic solvent.

28. The substrate processing method of claim 21 or 22, wherein, The drying fluid is a gas containing a gaseous organic solvent, The content ratio of the organic solvent in the drying fluid is 8% to 30%.

29. The substrate processing method as recited in either one of claims 21 or 22, wherein The substrate is a substrate whose surface is planarized by a chemical mechanical polishing process, and is used in a wet state.

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