Plasma processing apparatus

Abstract

The plasma processing apparatus includes: a processing chamber (2); and a gas supply device (30) for supplying a processing gas into the interior of the processing chamber (2). The gas supply device (30) has: a mass flow controller box (40) having a suction port (41) and an exhaust port (42); a plurality of pipes (43) each provided with a mass flow controller (43a); and a plurality of pipes (52) that are connected to the plurality of pipes (43) inside the mass flow controller box (40) and are connected to a plurality of pipes (54) serving as a supply source of the processing gas outside the mass flow controller box (40) through a plurality of union joints (53). At least one of the plurality of union joints (53) is covered with a pipe cover (60) so as to seal the union joint (53). The interior of the pipe cover (60) and the interior of the mass flow controller box (40) are communicated through a communication member (outer peripheral pipe (61), pipe (62)).

Description

Technical Field

[0001] The present invention relates to a plasma processing apparatus, and particularly to a plasma processing apparatus including a gas supply device for supplying a processing gas to the inside of a processing chamber. Background Art

[0002] In recent years, in the manufacturing process of semiconductor chips, a plasma processing apparatus is used to perform plasma processing on the surface of a semiconductor wafer. For example, Patent Document 1 discloses the following method: after the inside of the processing chamber of the plasma processing apparatus is plasma-cleaned using a gas containing a fluorine element, a gas containing a silicon element is used, and a deposition film is deposited on the inside of the processing chamber by plasma. Then, plasma etching is performed on the semiconductor wafer as a workpiece.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: JP-A-2018-046216 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] As disclosed in Patent Document 1, in recent years, processes using low-vapor-pressure gases such as SiCl4 or BCl3 have been realized. When introducing these flammable low-vapor-pressure gases into the processing chamber, a supply means that can maintain the low-vapor-pressure gas at a high temperature and suppress the leakage of the gas to the surroundings of the plasma processing apparatus is sought.

[0008] In addition, in the past, in a building where a plasma processing apparatus is installed, a plurality of pipes for supplying various types of gases from a gas supply source are connected to a mass flow controller box provided in the plasma processing apparatus, and gas is supplied to the inside of the processing chamber through a pipe for a processing gas extending from the mass flow controller box. Further, a plurality of pipes from the gas supply source in the building are connected to a gas pipe connection box disposed below the ground at the location where the plasma processing apparatus is installed in the building, and inside the box, they are detachably connected to a plurality of gas supply pipes that are connected to the mass flow controller box and extend downward. Moreover, the inside of each box is connected to an exhaust mechanism such as an exhaust pump to exhaust the gas inside each box, and even when gas leaks from the connection part of each mass flow controller or gas pipe, leakage of the gas to the inside of the building can be prevented.

[0009] On the other hand, in order to reduce the operating cost of a plasma processing apparatus for exhaust gas involved in suppressing the diffusion of the above-mentioned leaked gas, it is sought to omit the gas piping connection box or the exhaust inside it. However, in the case of simply stopping or removing the gas piping connection box or the mechanism for exhausting its interior, when gas leaks at the connection part between the gas piping from the above-mentioned building and the piping on the plasma processing apparatus side connected to the mass flow controller box, the gas leaking into the interior of the building may easily diffuse. Therefore, it is sought to provide a plasma processing apparatus equipped with a gas supply device capable of preventing such gas leakage or diffusion.

[0010] Other problems and new features will become clear from the description of this specification and the drawings.

[0011] Means for Solving the Problems

[0012] If the outline of a representative solution among the embodiments disclosed in this application is briefly described, it is as follows.

[0013] A plasma processing apparatus in one embodiment includes: a processing chamber; and a gas supply device for supplying a processing gas into the interior of the processing chamber. The gas supply device has: a mass flow controller box having a suction port and an exhaust port; a plurality of first pipes provided inside the mass flow controller box and each equipped with a mass flow controller; and a plurality of second pipes connected to the plurality of first pipes inside the mass flow controller box and connected to a plurality of third pipes serving as a supply source of the processing gas outside the mass flow controller box through a plurality of first unions. Here, at least one of the plurality of first unions is covered by a first pipe cover to seal the first union, and the interior of the first pipe cover and the interior of the mass flow controller box are connected through a first communication member.

[0014] Effects of the Invention

[0015] According to one embodiment, a plasma processing apparatus can be provided that can reduce the operating cost of the plasma processing apparatus and is equipped with a gas supply device capable of preventing gas leakage. Description of the Drawings

[0016] Figure 1 It is a schematic diagram showing the plasma processing apparatus in Embodiment 1.

[0017] Figure 2 It is a front view showing the gas supply device in a study example.

[0018] Figure 3 It is a front perspective view showing the gas supply device in a study example.

[0019] Figure 4 This is the front view showing the gas supply device in Embodiment 1.

[0020] Figure 5 This is the front perspective view showing the gas supply device in Embodiment 1.

[0021] Figure 6 This is the front view showing the pipe including the mass flow controller in Embodiment 1.

[0022] Figure 7 This is the front perspective view showing the periphery of the pipe cover in Embodiment 1.

[0023] Figure 8 This is the front perspective view showing the periphery of the pipe cover in Embodiment 1. Detailed Embodiment

[0024] The following will describe the embodiments in detail with reference to the drawings. In addition, in all the drawings used to illustrate the embodiments, components having the same function are denoted by the same reference numerals, and repeated descriptions thereof are omitted. Furthermore, in the following embodiments, unless otherwise particularly required, the description of the same or similar parts will not be repeated in principle.

[0025] (Embodiment 1)

[0026] <Structure of Plasma Processing Apparatus>

[0027] The following uses Figure 1 to illustrate the outline of the plasma processing apparatus 1 in Embodiment 1.

[0028] The plasma processing apparatus 1 includes a processing chamber 2 that is a cylindrical vacuum container and a stage 3 provided inside the processing chamber 2. Above the stage 3, a window member 4 having a circular plate shape and a disk 5 having a circular plate shape are provided. The window member 4 is made of a dielectric material such as quartz or ceramic, and hermetically seals the inside of the processing chamber 2. The disk 5 is provided below the window member 4 and is separated from the window member 4, and is made of a dielectric material such as quartz. In addition, a plurality of through holes 6 are provided in the disk 5.

[0029] The stage 3 is used to place the workpiece 7 when performing plasma processing on the workpiece 7. In addition, the workpiece 7 is, for example, a wafer made of a semiconductor material such as silicon. The space between the stage 3 and the bottom surface of the processing chamber 2 communicates with the space above the stage 3 through the gap between the side wall of the stage 3 and the side surface of the processing chamber 2. Therefore, the products, plasma, or gas particles generated during the processing of the workpiece 7 placed on the stage 3 are discharged to the outside of the processing chamber 2 through the space between the stage 3 and the bottom surface of the processing chamber 2.

[0030] In addition, although not shown in detail, the stage 3 has a cylindrical shape and a base material made of a metal material. The upper surface of the base material is covered with a dielectric film. A heater is provided inside the dielectric film, and a plurality of electrodes are provided above the heater. A DC voltage is supplied to the plurality of electrodes. By this DC voltage, the workpiece 7 is adsorbed on the upper surface of the dielectric film, and an electrostatic force for holding the workpiece 7 can be generated inside the dielectric film and the workpiece 7.

[0031] In addition, a refrigerant flow path is provided in the stage 3 in a concentric or spiral multiple configuration. In addition, in a state where the workpiece 7 is disposed on the upper surface of the dielectric film, a heat-transferable gas such as He is supplied to the gap between the lower surface of the workpiece 7 and the upper surface of the dielectric film. Therefore, a pipe through which the gas circulates is disposed inside the base material and the dielectric film.

[0032] In addition, the plasma processing apparatus 1 includes an impedance matcher 8 and a high-frequency power supply 9. The high-frequency power supply 9 is connected to the base material via the impedance matcher 8. In the plasma processing of the workpiece 7, in order to form an electric field for inducing charged particles in the plasma on the upper surface of the workpiece 7, high-frequency power is supplied from the high-frequency power supply 9 to the base material.

[0033] In addition, the plasma processing apparatus 1 includes a pipe 31 and a gas supply device 30. The gas supply device 30 is connected to the processing chamber 2 via the pipe 31. Gas is supplied from the gas supply device 30 to the space between the window member 4 and the disk 5 via the pipe 31 and diffuses in the above space. The diffused gas is supplied above the stage 3 from the through-hole 6.

[0034] The main feature of the present application lies in the structure of the gas supply device 30, which will be described in detail after this feature.

[0035] In addition, the plasma processing apparatus 1 includes a waveguide 10, a magnetron oscillator 11, a solenoid coil 12, and a solenoid coil 13. The waveguide 10 is disposed above the window member 4, and the magnetron oscillator 11 is provided at one end of the waveguide 10. The magnetron oscillator 11 can oscillate and output a microwave electric field. The waveguide 10 is a pipe for propagating the microwave electric field, and the microwave electric field is supplied to the inside of the processing chamber 2 via the waveguide 10. The solenoid coil 12 and the solenoid coil 13 are provided around the waveguide 10 and the processing chamber 2 and are used as a magnetic field generation unit.

[0036] In addition, the plasma processing apparatus 1 includes a pressure adjustment plate 14, a pressure detector 15, a turbo molecular pump 16 as a high vacuum pump, a dry pump 17 as a roughing pump, an exhaust pipe 18, and valves 19 to 21. The space between the stage 3 and the bottom surface of the processing chamber 2 functions as a vacuum exhaust portion. The pressure adjustment plate 14 is a disk-shaped valve that moves up and down above the exhaust port to increase or decrease the area of the flow path for gas to flow into the exhaust port. That is, the pressure adjustment plate 14 also serves as a valve for opening and closing the exhaust port.

[0037] The pressure detector 15 is a sensor for detecting the pressure inside the processing chamber 2. The signal output from the pressure detector 15 is sent to a control unit (not shown), and the pressure value is detected in the control unit. An instruction signal is output from the control unit corresponding to the detected value. Based on the above instruction signal, the pressure adjustment plate 14 is driven, and the position of the pressure adjustment plate 14 in the vertical direction changes, increasing or decreasing the area of the exhaust flow path.

[0038] The outlet of the turbo molecular pump 16 is connected to the dry pump 17 via the exhaust pipe, and a valve 19 is provided in the middle of the exhaust pipe. The space between the stage 3 and the bottom surface of the processing chamber 2 is connected to the exhaust pipe 18, and valves 20 and 21 are provided in the exhaust pipe 18. The valve 20 is a slow exhaust valve for exhausting at a low speed of the dry pump 17 so that the processing chamber 2 becomes a vacuum state from the atmospheric pressure, and the valve 21 is a main exhaust valve for exhausting at a high speed of the turbo molecular pump 16.

[0039] The following is an example of performing a plasma-utilizing etching process on a given film previously formed on the upper surface of the workpiece 7.

[0040] The workpiece 7 is placed on the front end of the arm of a vacuum transfer device such as a robot arm from the outside of the plasma processing apparatus 1 and transported into the processing chamber 2 and set on the stage 3. When the arm of the vacuum transfer device withdraws from the processing chamber 2, the inside of the processing chamber 2 is sealed. Then, a DC voltage is applied to the electrostatic adsorption electrode inside the dielectric film of the stage 3, and the workpiece 7 is held on the dielectric film by the generated electrostatic force.

[0041] In this state, a gas having heat transfer properties such as He is supplied to the gap between the workpiece 7 and the dielectric film via a pipe provided inside the stage 3. In addition, a refrigerant adjusted to a given temperature by a refrigerant temperature adjuster (not shown) is supplied to the refrigerant flow path inside the stage 3. Thereby, heat transfer is promoted between the substrate with the adjusted temperature and the workpiece 7, and the temperature of the workpiece 7 is adjusted to a value within a range suitable for the start of plasma processing.

[0042] The processing gas whose flow rate and velocity have been adjusted by the gas supply device 30 is supplied into the interior of the processing chamber 2 via the pipe 31, and the interior of the processing chamber 2 is exhausted from the exhaust port by the operation of the turbo molecular pump 16. By the balance of the two, the pressure inside the processing chamber 2 is adjusted to a value within the range suitable for plasma processing.

[0043] In this state, an electric field of microwaves is oscillated from the magnetron oscillator 11. The electric field of the microwaves propagates inside the waveguide 10 and passes through the window member 4 and the disk 5. Furthermore, the magnetic field generated by the solenoid coil 12 and the solenoid coil 13 is supplied to the processing chamber 2. By the interaction between the above magnetic field and the electric field of the microwaves, electron cyclotron resonance (ECR: Electron Cyclotron Resonance) is induced, and the atoms or molecules of the processing gas are excited, ionized or dissociated, thereby generating plasma inside the processing chamber 2.

[0044] When plasma is generated, high-frequency power is supplied from the high-frequency power supply 9 to the substrate of the stage 3, a bias potential is formed on the upper surface of the workpiece 7 to be processed, and charged particles such as ions in the plasma are induced to the upper surface of the workpiece 7 to be processed. Thus, an etching process is performed on a given film of the workpiece 7 to be processed along the pattern shape of the mask layer. After that, when it is detected that the processing of the film of the object to be processed has reached its end point, the supply of high-frequency power from the high-frequency power supply 9 is stopped, and the plasma processing is stopped.

[0045] In the case where further etching of the workpiece 7 to be processed is not required, high-vacuum evacuation is performed. Then, after removing static electricity and releasing the adsorption of the workpiece 7 to be processed, the arm of the vacuum transfer device enters the interior of the processing chamber 2, and the processed workpiece 7 to be processed is transported to the outside of the plasma processing device 1.

[0046] <Structure of the gas supply device in the research example>

[0047] The following will use Figure 2 and Figure 3 to illustrate the gas supply device 300 related to the prior art of the present invention. In Figure 3 the pipes provided inside each of the mass flow controller box (MFC box) 40 and the gas pipe connection box 50 shown in Figure 2 are shown. In addition, the gas supply device 300 mainly differs from the gas supply device 30 in the first embodiment in that the gas pipe connection box 50 is provided.

[0048] Mass flow controllers (MFCs) are installed in the plurality of pipes 43 provided inside the MFC box 40. The plurality of pipes 43 are connected to the plurality of pipes 52 through the plurality of couplings 44 inside the MFC box 40. The plurality of pipes 54, which are the supply source of the processing gas, are provided in the building, and are connected to the plurality of pipes 52 through the plurality of couplings 53 inside the gas pipe connection box 50. The processing gas flows through the plurality of pipes 54, the plurality of pipes 52, and the plurality of pipes 43, and is supplied to the inside of the processing chamber 2 of the plasma processing device 1 via the pipe 31 that collects the plurality of pipes 43.

[0049] Here, the flow rate and pressure of the gas flowing through each pipe are basically adjusted so that gas leakage does not occur, but gas leakage may occur in the event of an unexpected event such as an earthquake, etc. In particular, gas leakage may occur at the connection points of each pipe, that is, the coupling 44 and the coupling 53.

[0050] However, the coupling 44 is provided inside the MFC box 40, and the coupling 53 is provided inside the gas piping connection box 50. Therefore, by exhausting the gas inside the MFC box 40 to the outside of the building from the exhaust port 42 at all times, and exhausting the gas inside the gas piping connection box 50 to the outside of the building from the exhaust port 42 at all times, even if gas leakage occurs in the coupling 44 and the coupling 53, the gas can be prevented from diffusing into the building.

[0051] On the other hand, in order to reduce the running cost of the plasma processing device 1, it is sought to omit the exhaust of the gas piping connection box 50. Therefore, when gas leakage occurs in the manifold 53, the gas may spread into the building. In order to meet such a requirement, the gas supply device 30 in the first embodiment provides a technology that can prevent gas leakage even when the exhaust of the gas piping connection box 50 is omitted.

[0052] <Structure of Gas Supply Device in Embodiment 1>

[0053] The following uses Figures 4 to 8 The gas supply device 30 in the research example studied by the inventors of the present application will be described. Figure 5 Shown in Figure 4 The internal piping of the MFC box 40 is shown.

[0054] like Figure 4 as well as Figure 5 As shown, the gas supply device 30 has an MFC box 40, multiple pipes 43, multiple couplings 44, multiple pipes 52, multiple couplings 53, multiple heaters 55, multiple pipe covers 60a, multiple pipe covers 60b, multiple peripheral pipes 61 and multiple tubes 62, etc.

[0055] The MFC box 40 has an air inlet 41 and an air outlet 42. The air outlet 42 is connected to an exhaust pipeline such as a pipeline (not shown) for exhaust, and is communicated and connected to an exhaust mechanism such as an exhaust pump or a gas treatment chamber provided below the ground of the building where the plasma processing apparatus 1 is installed or outside the building. The exhaust mechanism in the first embodiment is always driven. Through the operation of the above mechanism, the gas inside the MFC box 40 is exhausted through the pipeline connected to the air outlet 42 from the air outlet 42, and the atmosphere in the building, that is, air, is inhaled from the air inlet 41. The inside of the MFC box 40 is always replaced with the atmosphere inside the building through the air inlet 41 and the air outlet 42 during the operation of the plasma processing apparatus 1.

[0056] A plurality of pipes 43 are provided inside the MFC box 40 and converge to the pipe 31. In addition, as Figure 6 shown, MFCs 43a, valves 43b, valves 43c, etc. are respectively installed on each of the plurality of pipes 43. The flow rate of the gas flowing through the pipe 43 is controlled by the MFC 43a. The valves 43b and 43c are mainly used for the purpose of controlling the start and stop of the supply of the gas flowing through the pipe 43. The gas whose flow rate is controlled in the pipe 43 is supplied to the inside of the processing chamber 2 via the pipe 31.

[0057] The relatively large-sized MFC 43a and valves 43b, 43c are arranged on the pipe 43 at the upper part of the space inside the MFC box 40, and the lower part of the pipe 43, the union 44 connected thereto, and the pipe 52 are located at the lower part of the space inside the MFC box 40. Furthermore, the air outlet 42 arranged on the right side wall of the MFC box 40 in this example, and preferably the air inlet 41 as well, are arranged at a height position lower than the valve 43c in the up-down direction of the drawing. Therefore, the flow of the atmospheric gas flowing from the left side to the right side in the MFC box 40 inside becomes faster or has a larger flow rate at the lower part of the MFC box 40.

[0058] In addition, each of the plurality of pipes 43 is connected to a plurality of pipes 52 through each of the plurality of unions 44 inside the MFC box 40. Each of the plurality of pipes 52 extends outside the MFC box 40 downward in the drawing, and outside the MFC box 40, is connected to a plurality of pipes 54 extending in the up-down direction through each of the plurality of unions 53. Each of the plurality of pipes 54 is connected to a plurality of gas sources including storage parts such as tanks (not shown). There are a plurality of pipes for supplying various types of gases below the ground of the building, and each of the plurality of pipes 54 is a supply path for the processing gas supplied to the processing chamber among the various types of gases. In addition, each of the plurality of pipes 54 is led out from the above gas source to the vicinity of the location where the plasma processing apparatus 1 is provided inside the space below the ground of the building.

[0059] The types of processing gases can be different in each of the respective pipes 54, or the same type of gas can flow through and be supplied to multiple pipes 54. Here, as the processing gases, gases roughly classified into three types are exemplified. The first type of gas is a gas with strong flammability or toxicity and is a gas that is relatively difficult to liquefy. The second type of gas is a gas with strong flammability or toxicity and is a gas that is relatively easy to liquefy. In other words, the second type of gas is a gas with a higher boiling point than the first type of gas. The third type of gas is a gas with weak flammability, is non-toxic, and is a gas that is relatively difficult to liquefy.

[0060] Examples of the first type of gas are H2, CH3F, CH4, Cl2, SO2, HBr, SiF4, NF3, or CO2. Examples of the second type of gas are SiCl4 or BCl3. Examples of the third type of gas are Ar, He, O2, N2, CHF3, SF6, or CF4.

[0061] In this example, when the plasma processing apparatus 1 operates for a long time, gas leakage may occur in the union 53 due to performance degradation or component denaturation, etc. As described in the example of the above prior art, by omitting the gas pipe connection box 50 and its exhaust, especially for gases with strong flammability or toxicity (the first type of gas, the second type of gas), it is necessary to suppress the diffusion inside the building when leakage occurs.

[0062] Therefore, in Embodiment 1, pipe covers 60a, 60b and the outer peripheral pipe 61 and the pipe 62 as communication members are used. In addition, since there are no particular problems even if the third type of gas leaks, the pipe covers 60a, 60b and the above communication members are not used for the pipes through which the third type of gas flows.

[0063] The pipe covers 60a, 60b cover the outer peripheral sides of the union 53, the pipe 52, and the pipe 54. A gap is provided between the pipe covers 60a, 60b and the union 53, the pipe 52, and the pipe 54. The outer peripheral pipe 61 is connected to the pipe cover 60a at its lower end, and communicates the inside of the pipe cover 60a and the inside of the MFC box 40. In addition, the outer peripheral pipe 61 extends with the pipe 52 as the central axis and covers the outer periphery of the pipe 52. The pipe 62 is connected to the side wall of the pipe cover 60b and is connected to the MFC box 40 at a position different from the pipe 52, constituting a path for a gas different from the pipe 52.

[0064] Figure 7 Shown in detail Figure 4 and Figure 5Around the pipe cover 60a, a case is shown where the outer peripheral pipe 61 is included as a communication member. The outer peripheral pipe 61 is adapted to allow the above-mentioned first type of gas to flow through the pipes 43, 52, and 54.

[0065] As Figure 4 and Figure 5 shown, at least one of the plurality of pipe connectors 53 is covered by the pipe cover 60a so that the pipe connector 53 and the surrounding space are sealed. The pipe cover 60a is formed in a cylindrical shape that is longer than the vertical length of the pipe connector 53. The pipe cover 60a is made of a metal material such as stainless steel, iron, or copper, or an alloy having them as the main component. In addition, in order to improve the airtightness inside the pipe cover 60a, a seal such as a sealing ring may be provided at the upper or lower end portion of the members constituting the pipe cover 60a that faces the outer peripheral side walls of the pipes 52 and 54. Thus, even if gas leaks from the pipe connector 53, the gas will remain inside the pipe cover 60a.

[0066] The outer peripheral pipe 61 extends around the pipe 52 provided with the pipe cover 60a among the plurality of pipes 52 and covers the outer periphery of the pipe 52. In addition, the outer peripheral pipe 61 is connected to the upper part of the pipe cover 60a and the bottom of the MFC box 40. The inside of the pipe cover 60a and the inside of the MFC box 40 communicate with each other through the space between the outer peripheral side wall surface of the pipe 52 and the inner peripheral side wall surface of the outer peripheral pipe 61. Thus, the gas leaking from the connection portion of the pipe 52 or 54 connected to the pipe connector 53 into the inside of the pipe cover 60a diffuses inside the gap between the pipe 52 and the outer peripheral pipe 61 and is introduced into the inside of the MFC box 40.

[0067] In addition, the outer peripheral pipe 61 is made of a metal material or a resin material. The above-mentioned metal material is, for example, stainless steel, iron, or copper, or an alloy having them as the main component. For example, when the supplied gas is a flammable gas, it is assumed that the leaked flammable gas will explode. If the pipe cover 60a is the above-mentioned metal material with high rigidity, it is easy to suppress breakage caused by impact or pressure increase.

[0068] The above-mentioned resin material is, for example, epoxy resin. For example, when the possibility of the supplied gas exploding is low but the gas is a toxic gas, considering the material cost, etc., the relatively inexpensive above-mentioned resin material can also be used.

[0069] Figure 8 Shown in detail Figure 4 and Figure 5 around the pipe cover 60b, a case is shown where the pipe 62 is included as a communication member. The pipe 62 is adapted to allow the above-mentioned second type of gas to flow through the pipes 43, 52, and 54.

[0070] As described above, the second type of gas is a gas that is relatively easy to liquefy. When supplying such a second type of gas from the pipe 54, in order to prevent liquefaction, it is effective to provide a heater 55 on the outer peripheries of the pipes 43, 52, and 54. The heater 55 maintains the temperature of the gas flowing through the interiors of the pipes 43, 52, and 54 above the condensation temperature. Here, the heater 55 is, for example, a strip-shaped conductor, and heat is generated from the conductor by passing an electric current through the conductor. By spirally winding and arranging the heater 55 in the vertical direction along the outer peripheries of the pipes 43, 52, and 54, the interiors of the pipes 43, 52, and 54 can be sufficiently heated.

[0071] In Figure 8 also, similar to Figure 7 at least one of the plurality of unions 53 is covered with the pipe cover 60b so that the union 53 and the space around it are sealed. The pipe cover 60b forms a cylindrical shape that is longer than the length of the union 53 in the vertical direction. In order to hermetically seal the interior of the pipe cover 60b, a seal such as an O-ring can be arranged between the inner peripheral wall surfaces at the upper and lower ends of the opposing pipe covers 60b and the outer peripheral walls of the pipes 52 and 54. Additionally, in Figure 8 in order to make the drawings easier to see, the heater 55 shown in Figure 4 and Figure 5 is omitted. There are cases where it is difficult to operate the outer peripheral pipe 61 due to the need for the heater 55. In such cases, the pipe 62 can be appropriately used. Figure 7

[0072] The lower end portion of the pipe 62 is hermetically connected to the outer side wall surface of the pipe cover 60b via the union 63. Thereby, the interior of the pipe 62 and the interior of the pipe cover 60b communicate with each other. In addition, the upper end portion of the pipe 62 is hermetically connected to the side wall surface below the exhaust port 42 of the MFC box 40 via the union 45. In this way, the interior of the pipe cover 60b and the interior of the MFC box 40 communicate with each other via the pipe 62. Thus, the gas leaking from the connection portion of the pipe 52 or 54 connected to the union 53 into the interior of the pipe cover 60b diffuses from the interior of the pipe cover 60b into the interior of the pipe 62 and is introduced into the interior of the MFC box 40.

[0073] Furthermore, the union 63 is detachably provided on the pipe cover 60b, and the union 45 is detachably provided on the MFC box 40. The pipe 62 is connected to the pipe cover 60b via the union 63 and connected to the MFC box 40 via the union 45. Therefore, the pipe 62 can be detached from and attached to the pipe cover 60b and the MFC box 40.

[0074] In addition, the tube 62 is made of a resin material that can transmit visible light. In other words, the tube 62 is made of a material that allows the operator who operates the plasma processing apparatus 1 to visually inspect the inside of the tube 62. If the leaked gas remaining inside the piping outer cover 60b is far from the heater 55, there is a possibility that the leaked gas will liquefy inside the tube 62. At this time, as long as the operator can visually confirm the liquefied gas, it is easy for the operator to detect early that gas has leaked from the union 53. Then, it is easy to take some countermeasure means against the gas leak.

[0075] As described above, according to the first embodiment, since the exhaust of the gas piping connection box 50 can be omitted, the operating cost of the plasma processing apparatus 1 can be reduced. In addition, even if gas leaks from the union 53, the leaked gas can be introduced into the inside of the MFC box 40 through the piping outer covers 60a and 60b and the communication member (outer peripheral piping 61, tube 62), and the leaked gas can be exhausted to the outside of the building from the exhaust port 42 of the MFC box 40. That is, according to the first embodiment, a plasma processing apparatus 1 provided with a gas supply device 30 capable of preventing gas leakage can be provided.

[0076] The present invention has been specifically described based on the above-described embodiments, but the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist thereof.

[0077] For example, in the above-described embodiment, the outer peripheral piping 61 and the tube 62 are illustrated as the communication member, but as long as the inside of the MFC box 40 and the inside of the piping outer covers 60a and 60b are communicated, the communication member may have other structures.

[0078] In addition, in the above-described embodiment, a case where the piping outer covers 60a and 60b and the above-described communication member are not used for the piping through which the third type of gas flows is illustrated, but the piping outer covers 60a and 60b or the above-described communication member, or both of them may be used for such piping.

[0079] Explanation of reference numerals

[0080] 1 Plasma processing apparatus

[0081] 2 Processing chamber

[0082] 3 Stage

[0083] 4 Window member

[0084] 5 Disk

[0085] 6 Through hole

[0086] 7 Workpiece (wafer)

[0087] 8 Impedance matcher

[0088] 9 High-frequency power supply

[0089] 10 Waveguide

[0090] 11 Magnetron oscillator

[0091] 12 Solenoid coil

[0092] 13 Solenoid coil

[0093] 14 Pressure adjustment plate

[0094] 15 Pressure detector

[0095] 16 Turbomolecular pump

[0096] 17 Dry pump

[0097] 18 Exhaust pipe

[0098] 19 - 21 Valves

[0099] 30 Gas supply device

[0100] 31 Pipe

[0101] 40 Mass flow controller box (MFC box)

[0102] 41 Suction port

[0103] 42 Exhaust port

[0104] 43 Pipe

[0105] 43a Mass flow controller (MFC)

[0106] 43b, 43c Valves

[0107] 44, 45 Unions

[0108] 50 Gas pipe connection box

[0109] 51 Exhaust port

[0110] 52 Pipe

[0111] 53 Union

[0112] 54 Pipe

[0113] 55 Heater

[0114] 60a, 60b Pipe covers

[0115] 61 Peripheral pipe

[0116] 62 Pipe

[0117] 63 Union

[0118] 300 Gas supply device.

Claims

1. A plasma processing apparatus, comprising: a processing chamber; and a gas supply device for supplying a processing gas into the interior of the processing chamber, wherein the plasma processing apparatus is characterized in that the gas supply device includes: a mass flow controller box having an intake port and an exhaust port; a plurality of first pipes provided inside the mass flow controller box and each provided with a mass flow controller; and a plurality of second pipes connected to the plurality of first pipes inside the mass flow controller box and connected to a plurality of third pipes serving as a supply source of the processing gas outside the mass flow controller box through a plurality of first unions, at least one of the plurality of first unions is covered by a first pipe cover so as to seal the first union, the interior of the first pipe cover and the interior of the mass flow controller box communicate through a first communication member.

2. The plasma processing apparatus according to claim 1, wherein the first communication member includes: an outer peripheral pipe covering the outer periphery of the second pipe provided with the first pipe cover among the plurality of second pipes.

3. The plasma processing apparatus according to claim 2, wherein the outer peripheral pipe is made of a metal material.

4. The plasma processing apparatus according to claim 2, wherein the outer peripheral pipe is made of a resin material.

5. The plasma processing apparatus according to claim 1, wherein the first communication member includes: a pipe detachably connected to the first pipe cover and the mass flow controller box.

6. The plasma processing apparatus according to claim 5, wherein the pipe is made of a resin material capable of transmitting visible light.

7. The plasma processing apparatus according to claim 2, wherein at least one of the plurality of first unions is covered by a second pipe cover so as to seal the first union, the interior of the second pipe cover and the interior of the mass flow controller box communicate through a second communication member, the second communication member includes: a pipe detachably connected to the second pipe cover and the mass flow controller box, the processing gas flowing through the first pipe, the second pipe, and the third pipe using the second communication member is a gas having a higher boiling point than the processing gas flowing through the first pipe, the second pipe, and the third pipe using the first communication member.

8. The plasma processing apparatus according to claim 7, wherein the processing gas flowing through the first pipe, the second pipe, and the third pipe using the first communication member is H2, CH3F, CH4, Cl2, SO2, HBr, SiF4, NF3, or CO2, the processing gas flowing through the first pipe, the second pipe, and the third pipe using the second communication member is SiCl4 or BCl3, The processing gas flowing through the first pipe, the second pipe, and the third pipe that do not use the first connection member or the second connection member is Ar, He, O2, N2, CHF3, SF6, or CF4.

9. The plasma processing apparatus according to claim 7, wherein a heater is provided on the outer circumferences of the first pipe, the second pipe, and the third pipe that use the second connection member.

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