High temperature panel for deposition applications

By designing a combined structure of heating components and support rings in the processing chamber, the problem of inaccurate temperature control was solved, achieving uniformity in substrate processing and equipment stability at high temperatures, and reducing particle deposition and seal degradation.

CN115702259BActive Publication Date: 2025-10-24APPLIED MATERIALS INC
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Patent Information

Application Number
CN202180042781.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2020-06-17
Filing Date
2021-05-18
Publication Date
2025-10-24
Estimated Expiration
2041-05-18

AI Technical Summary

Technical Problem

In existing technologies, the temperature control of the processing chamber is not precise enough, which leads to defects and unstable equipment operation during semiconductor manufacturing.

Method used

A panel for processing a chamber is designed, comprising a heating assembly and a support ring. The support ring supports the panel via a cantilever structure, forming a gap to limit heat transfer, and provides thermal barriers via an extension to ensure temperature uniformity and effective sealing of the seals.

Benefits of technology

It achieves uniform temperature control at high temperatures, reduces particle deposition, improves the uniformity of substrate processing and equipment uptime, and protects the seals from the effects of high temperatures.

✦ Generated by Eureka AI based on patent content.

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Abstract

Embodiments of the present disclosure relate to a faceplate for a processing chamber. In one example, the faceplate includes a body having a plurality of apertures formed therethrough. A heating assembly is disposed within the body and the heating assembly surrounds the plurality of apertures. A support ring is disposed in the body. The support ring surrounds the heating assembly. The support ring includes a main body and a cantilever extending radially inward from the main body. The cantilever contacts the body of the faceplate.
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Description

TECHNICAL FIELD

[0001] Embodiments of the present disclosure generally relate to a heated faceplate for use in a substrate processing chamber. BACKGROUND

[0002] In the fabrication of integrated circuits, deposition processes such as chemical vapor deposition (CVD) or atomic layer deposition (ALD) are used to deposit thin films of various materials over a semiconductor substrate. In other operations, layer-changing processes such as etching are used in a repetitive manner to fabricate various layers of electronic components such as during semiconductor fabrication.

[0003] When assembling integrated circuits, it is desirable to fabricate semiconductor components that are free of defects, and as the demand for improved devices continues to increase, so does the need for improved methods and apparatuses for fabricating such devices. Chemicals used in new processes, such as precursor gases, continually require enhanced process control, such as temperature control, to perform such processes to predetermined specifications. Thus, there is a need in the art for process chamber components that are capable of providing enhanced temperature control for device fabrication and processing. SUMMARY

[0004] In one embodiment, a faceplate for a processing chamber includes a body having a plurality of apertures formed therethrough, a heating assembly disposed within the body, the heating assembly surrounding the plurality of apertures, and a support ring disposed in the body, the support ring surrounding the heating assembly, the support ring including a main body and a cantilever extending radially inward from the main body, the cantilever contacting the body of the faceplate.

[0005] In another embodiment, a faceplate for a processing chamber includes a body having a plurality of apertures formed therethrough, the body including a first extension and a second extension each extending outward from an outer surface of the body, the first extension and the second extension together defining a recess, each of the first extension and the second extension having a greater thickness at a radially outward edge thereof than at a radially inward edge thereof. The faceplate also includes a heating assembly disposed within the body, the heating assembly surrounding the plurality of apertures, the heating assembly being located radially inward of the first extension and the second extension. The faceplate additionally includes a support ring disposed in the recess of the body, the support ring including a main body and surrounding the heating assembly, wherein the radially outward edge of each of the first extension and the second extension contacts the support ring, and the radially inward edge of each of the first support ring and the second support ring is spaced apart from the support ring.

[0006] In another embodiment, a processing chamber includes a chamber body, a substrate support disposed in the chamber body, and a lid assembly disposed on the chamber body, the lid assembly including a body having a plurality of apertures formed therethrough, a heating assembly disposed within the body, the heating assembly surrounding the plurality of apertures, and a support ring disposed in the body, the support ring surrounding the heating assembly, the support ring including a main body and a cantilever extending radially inward from the main body, the cantilever contacting the body of the faceplate. BRIEF DESCRIPTION OF DRAWINGS

[0007] So that the manner in which the above recited features of the present disclosure can be understood in detail, a brief description of the embodiments summarized above can be had by reference to embodiments, some of which are illustrated in the drawings, while the appended claims can present other embodiments. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and therefore are not to be considered

[0008] Figure 1A A schematic cross-sectional view of a processing chamber according to one embodiment of the present disclosure is shown.

[0009] Figure 1B An enlarged partial view of the processing chamber of Figure 1A is shown.

[0010] Figure 2 An enlarged partial view of the processing chamber 100 of Figure 1A and Figure 1B according to one embodiment of the present disclosure is shown. In particular, Figure 2 A faceplate 138 adjacent to the baffle 136 and the sidewall 104 of the chamber body 102 is shown.

[0011] Figure 3 An enlarged view of the coupling portion of the faceplate depicted is shown. Figure 2

[0012] Figure 4 A temperature of the faceplate according to one embodiment of the present disclosure is shown.

[0013] Figure 5A A view of a faceplate assembly according to another embodiment of the present disclosure is shown.

[0014] Figure 5B A perspective view of one embodiment of a support ring is shown.

[0015] To facilitate the understanding of this disclosure, the same numbers are used throughout the disclosure and drawings to refer to like components. It is expected that one of ordinary skill in the art could DETAILED DESCRIPTION​

[0016] Embodiments of the present disclosure generally relate to an apparatus for gas distribution in a processing chamber. More specifically, aspects of the present disclosure relate to a metal faceplate. The faceplate has a body formed of a distribution portion surrounded by a coupling portion. A heater is disposed within the distribution portion to heat the body to an elevated temperature. A support ring is disposed within the coupling portion of the faceplate. A cantilever extends from the support ring creating a load bearing point to support the faceplate. A gap is disposed between the support ring and the faceplate. The gap acts as a thermal barrier and limits heat transfer between the distribution portion and the coupling portion of the faceplate.

[0017] Figure 1A A schematic cross-sectional view of a processing chamber 100 according to one embodiment is shown. Figure 1B An enlarged schematic view of details of the processing chamber 100 is shown. The processing chamber 100 includes a body 102 having a sidewall 104 and a base 106. A lid assembly 108 is coupled to the body 102. The body 102 and the lid assembly 108 define a processing volume 110. The body 102 is formed of a metallic material, such as aluminum or stainless steel, although other materials suitable for use with the processing volume 110 therein are contemplated. A substrate support 112 is disposed within the processing volume 110 and supports a substrate 114 during processing. The substrate support 112 includes a support body 116 coupled to a shaft 118. The shaft 118 is coupled to a lower surface of the support body 116 and extends out of the body 102 through an opening 120 in the base 106. The shaft 118 is coupled to an actuator 122. The actuator 122 vertically actuates the shaft 118 and the support body 116 coupled thereto between a substrate loading position and a substrate processing position. To facilitate processing of the substrate 114 in the processing chamber 100, the substrate 114 is disposed on an upper surface of the support body 116 opposite the shaft 118.

[0018] A port 124 is formed in the sidewall 104 to facilitate entry and exit of the substrate 114 into and out of the processing volume 110. An actuation door 126, such as a slit valve, selectively enables the substrate 114 to pass through the port 124 to be loaded onto or removed from the support body 116. An electrode 128 is optionally disposed within the support body 116 and is electrically coupled to a power source 130 through the shaft 118. The electrode 128 is selectively biased by the power source 130 to generate an electromagnetic field to clamp the substrate 114 onto the support body 116. In certain embodiments, a heater 133, such as a resistive heater, is disposed within the support body 116 to heat the substrate 114 disposed thereon.

[0019] An inlet port 174 is disposed within the lid 134. The inlet port 174 is fluidly coupled to a gas conduit 146. The gas conduit 146 enables gas to flow from a first gas source 148, such as a process gas source, through the inlet port 174 into the first volume 140. A second gas source 150 can supply a cleaning gas to remove particle deposits from the interior surfaces of the processing chamber 100. A seal 180, such as an O-ring, is disposed in a groove, such as a dovetail groove, at the annular extension 172 between the baffle 136 and the lid 134 to isolate the processing volume 110 from the external environment, thereby enabling a vacuum therein to be maintained by the vacuum system 132. The vacuum system 132 is fluidly coupled to the processing volume 110 to exhaust gas from the processing volume 110.

[0020] The cover assembly 108 includes a cover 134, a baffle 136, a panel 138, and a clamp 135. The baffle 136 includes a recessed circular distribution portion 170 surrounded by an annular extension 172. The baffle is disposed between the cover 134 and the panel 138 and is coupled to the lower surface 141 of the cover 134 and the upper surface 149 of the panel 138 at the annular extension 172. The clamp 135 is coupled to the lower surface of the cover 134, the outer surface 143 of the baffle 136, the support ring 158 (e.g., Figure 2 172, and an outer edge 145 (shown in FIG. 17) of the annular extension 172 and an upper surface 105 of the sidewall 104. A clamp 135 facilitates securing the faceplate 138. The cover 134 is coupled to an upper surface 137 of the annular extension 172 opposite the body 102. The faceplate 138 is coupled to a lower surface 139 of the annular extension 172. A first volume 140 is defined between the baffle 136 and the cover 134. A second volume 142 is defined between the baffle 136 and a lower portion 151 of the faceplate 138. A plurality of apertures 144 are formed through the dispensing portion 170 of the baffle 136 and facilitate fluid communication between the first volume 140 and the second volume 142.

[0021] The panel 138 has a distribution portion 176 and a coupling portion 178 (eg, Figure 2 140 , the coupling portion 178 is disposed radially outward from the distribution portion 176. The distribution portion 176 is disposed between the processing volume 110 and the second volume 142 and facilitates fluid flow therebetween. The coupling portion 178 surrounds the distribution portion 176 at the periphery of the faceplate 138. To facilitate processing of the substrate 114, an RF generator 182 may be coupled to the faceplate 138 to excite gas from the first gas source 148, the second gas source 150, or both the first gas source 148 and the second gas source 150 to form ionized species. In one embodiment, the RF generator 182 and the faceplate 138, in conjunction with the electrode 128, facilitate generation of a capacitively coupled plasma within the processing volume 110.

[0022] One or more holes 152 are disposed through the faceplate 138 within the distribution portion 176. The holes 152 enable fluid communication between the second volume 142 and the processing volume 110. In operation, gas flows from the inlet port 174 into the first volume 140, through the plurality of holes 144 in the baffle 136 into the second volume 142, through the plurality of holes 152 in the faceplate 138, and into the processing volume 110. The arrangement and size of the holes 152 enable selective flow of gas into the processing volume 110 in order to achieve a desired gas distribution. In one embodiment, uniform gas distribution can be desired, and this will be achieved by selective flow of gas into the processing volume 110.

[0023] One or more heating assemblies 160 are disposed in the faceplate 138. In one embodiment, the heating assemblies 160 are disposed radially outward of the holes 152. The heating assemblies 160 can be any assembly capable of providing heat to the faceplate 138. In one embodiment, the heating assemblies 160 comprise resistive heaters that can be embedded and surround the holes 152 of the faceplate 138. The heating assemblies 160 heat the faceplate 138 to a high temperature, such as 300°C or higher. For example, the heating assemblies 160 can heat the faceplate to 400°C, 500°C, or higher. Increasing the temperature of the faceplate 138 to 300°C, 400°C, 500°C, or higher during processing results in a reduction of particle formation on the faceplate 138, which translates to improved deposition on the substrate 114 and processing of the substrate 114, while also increasing the tool’s up-time.

[0024] Figure 2 An enlarged partial view of the processing chamber 100 of Figure 1A is shown. In particular, Figure 2 The faceplate 138 is shown adjacent to the baffle 136 and the sidewall 104 of the chamber body 102.

[0025] A recess 153 is formed in the radially outward edge of the coupling portion 178 of the panel 138. A support ring 158 is disposed within the recess 153 formed in the coupling portion 178 of the panel 138. The support ring 158 is disposed radially outward of both the dispensing portion 176 and the heating assembly 160 of the panel 138. Seals 154 and 156 are disposed above and below the coupling portion 178 of the panel 138. The seals 154 and 156 are disposed within dovetail grooves in the baffle 136 and the sidewall 104. The seals 154 and 156 may be O-rings that provide a vacuum seal for the processing volume 110. The support ring 158 provides structural support and coupling support for the panel 138. The support ring 158 is constructed of a material such as, but not limited to, aluminum, aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, or stainless steel. The support ring 158 has a main body 161 and a lip 162 disposed on the outer edge 145 of the support ring 158. The lip 162 extends radially outward from the support ring 158 and facilitates handling of the panel 138 during preventative maintenance.

[0026] The support ring 158 additionally includes a radially inward cantilever 164. The cantilever 164 is positioned opposite the lip 162 and extends radially inward from an inner surface 163 of the support ring 158. The cantilever 164 provides structural support and a weight-bearing surface for the faceplate 138. For example, the cantilever 164 prevents the faceplate 138 from sagging, thereby improving deposition on the substrate 114 and increasing uniformity and handling of the substrate 114. The minimal contact and low thermal conductivity of the support ring 158 trap heat within the faceplate 138, resulting in limited power used to heat the faceplate and helping to meet thermal budget targets.

[0027] Figure 3 Shown Figure 2 An enlarged view of the coupling portion 178 of the panel 138 is depicted. Figure 3 As shown, the support ring 158 engages a recess 153 formed around the periphery of the panel 138. The panel 138 includes a stepped surface that corresponds to the shape of the radially inward surface of the support ring 158. To facilitate assembly of the panel 138 and the support ring 158, the support ring 158 may be formed from a plurality of segments that may be assembled to form a complete ring around the panel 138.

[0028] When the support ring 158 is assembled with the faceplate 138, the support ring 158 contacts the faceplate 138 only in selected locations within the recess 153, which minimizes heat transfer therebetween. For example, the support ring 158 contacts the faceplate 138 at (1) the top surface 184 of the overhang 164; at (2) the radially outward edge of the upper surface 165 of the main body 161 of the support ring 158; and at (3) the radially outward edge of the lower surface 167 of the main body 161 of the support ring 158. The top surface 184 of the overhang 164 is a load bearing structure of the support ring 158. In one embodiment, which can be combined with other embodiments, the overhang 164 has a nominal thickness of about 8 millimeters (mm) to 20 mm. In another embodiment, the overhang 164 is about 10 mm thick.

[0029] In locations within the recess 153 where the edge support ring 158 does not contact the faceplate 138, a gap (such as the gaps 190, 192a, and 192b) is formed. The gaps 190, 192a, and 192b are spaces disposed radially between the faceplate 138 and the support ring 158. The gap 190 is disposed between the overhang 164 and the sidewall 185 of the recess 153. In one embodiment, as shown in FIG. 2, the gap 190 is about 0.5 mm to 1 mm wide. In another embodiment, the gap 190 is about 0.75 mm wide. Figure 3As depicted, gap 192a is disposed adjacent to inner surface 163a of support ring 158 and extends at least partially over upper surface 165 of main body 161 of support ring 158, and gap 192b is disposed adjacent to inner surface 163b and extends at least partially under lower surface 167 of main body 161 of support ring 158. In another embodiment, gap 192a is disposed between inner surface 163a of support ring 158 and the stepped lower surface of extension 186. Gap 192b is disposed between inner surface 163b of support ring 158 and the stepped upper surface of extension 188. Gaps 190, 192a, and 192b minimize the contact area between faceplate 138 and support ring 158 to limit the transfer of heat from heating assembly 160 to seals 154, 156 to prevent their degradation, thereby keeping the temperature of seals 154, 156 low (e.g., below their degradation temperature) and reducing the power requirements of heating assembly 160. Gaps 190, 192a, and 192b provide thermal resistance and additionally provide space for thermal expansion. In one embodiment, which can be combined with other embodiments, the width of gap 190, 192a, or 192b is about 0.1 mm to 5 mm (such as about 0.5 mm to 2 mm). It should be understood that the size, shape, and arrangement of gaps 190, 192a, 192b disposed around support ring 158 can be selected in relation to the desired rate of heat transfer across coupling portion 178. Furthermore, the depth, width, and cross-section of gaps 190, 192a, and 192b can be adjusted as needed. Any arrangement of gaps, channels, grooves, recesses, or cutouts that can minimize heat transfer can be used as a thermal break.

[0030] Coupling portion 178 includes extensions 186 and 188 that partially define recess 153. Extensions 186 and 188 provide the primary heat-blocking feature of this design. The reduced cross-sectional area of ​​extensions 186 and 188 provides reduced heat conduction, resulting in heat blocking within coupling portion 178. Extension 186 has a flat upper surface and a stepped lower surface. The flat upper surface of extension 186 is adjacent to lower surface 139 of baffle 136. Extension 186 extends above upper surface 165 of main body 161 of support ring 158. Extension 186 at least partially contacts upper surface 165 of main body 161 of support ring 158. Stepped lower surface 189 of extension 186 is located between the radially inward surface of support cantilever 164 and faceplate 138. Extension 188 has a flat lower surface and a stepped upper surface. The flat lower surface of extension 188 is adjacent to upper surface 105 of sidewall 104. Extension 188 extends below the bottom surface of support ring 158. Extension 188 at least partially contacts the bottom surface of support ring 158. Due to the presence of the respective stepped surfaces, extensions 186 and 188 provide a thermal barrier from distribution portion 176 to coupling portion 178 by creating additional clearance above / below main body 161. The thermal barrier provided by extensions 186, 188 limits heat transfer from heating assembly 160 to vacuum seal 154 and vacuum seal 156. Extensions 186 and 188 are thin-walled portions of panel 138. In one embodiment, which may be combined with other embodiments, extensions 186 and 188 have a nominal thickness of approximately 0.5 mm to 5 mm (such as approximately 0.5 mm to 3 mm thick). It should be appreciated that the depth, width, and cross-section of the extensions 186 and 188 disposed about the support ring 158 may be selected in relation to a desired rate of heat transfer across the coupling portion 178 .

[0031] Gaps 193a and 193b also serve as thermal insulation. Gap 193a provides thermal insulation between baffle 136 and extension 186. Gap 193a is defined by a recess in lower surface 139 of baffle 136, adjacent to vacuum seal 154. Gap 193b provides thermal insulation between sidewall 104 and extension 188. Gap 193b is defined by a recess in upper surface 105 of sidewall 104, adjacent to vacuum seal 156. The depth, width, and cross-section of gaps 193a and 193b can be selected in relation to the desired rate of heat transfer from panel 138 to seals 154 and 156.

[0032] Figure 4 The temperature gradient across panel 400 is depicted. Panel 400 is similar to panel 138. The temperature is Figure 1AThe hottest region 402 (shown) is at the center of the panel 400. The temperature gradually cools in a radially outward direction, such that region 412 can have the coolest temperature on the panel 400. As shown, the temperature at region 402 can be about 350 °C or higher. The temperature at region 404 can be about 25 °C to 40 °C cooler than the temperature at region 402, such that the temperature at region 404 can be about 310 °C to 325 °C. Region 406 includes at least a portion of the coupling portion 178 (shown in FIG. 1) of the panel 400. The temperature at region 406 can be about 10 to 15 °C cooler than the temperature at region 404, such that region 406 has a temperature of about 300 °C. The temperature at region 408 is about 270 °C to 280 °C. The temperature at region 408 is about 20 °C to 30 °C cooler than region 406. The lower temperature at region 408 is due to the gaps 190, 192a, and 192b (shown in FIG. 1). The temperature at region 410 is about 180 °C to 210 °C. The temperature at region 412 is about 150 °C to 170 °C. Figure 4 As depicted, the panel 400 has regions 402, 404, 406, 408, 410, and 412, which depict different temperatures across the panel 400. Figure 4 is an example embodiment, and there can be fewer or more regions. In an example embodiment, as shown, the panel 400 has a circular shape. However, other shapes are contemplated. Figure 4 As depicted, the temperature at region 402 can be about 350 °C or higher. The temperature at region 404 can be about 25 °C to 40 °C cooler than the temperature at region 402, such that the temperature at region 404 can be about 310 °C to 325 °C. Region 406 includes at least a portion of the coupling portion 178 (shown in FIG. 1) of the panel 400. The temperature at region 406 can be about 10 to 15 °C cooler than the temperature at region 404, such that region 406 has a temperature of about 300 °C. The temperature at region 408 is about 270 °C to 280 °C. The temperature at region 408 is about 20 °C to 30 °C cooler than region 406. The lower temperature at region 408 is due to the gaps 190, 192a, and 192b (shown in FIG. 1). The temperature at region 410 is about 180 °C to 210 °C. The temperature at region 412 is about 150 °C to 170 °C. Figure 3 As depicted, the temperature at region 402 can be about 350 °C or higher. The temperature at region 404 can be about 25 °C to 40 °C cooler than the temperature at region 402, such that the temperature at region 404 can be about 310 °C to 325 °C. Region 406 includes at least a portion of the coupling portion 178 (shown in FIG. 1) of the panel 400. The temperature at region 406 can be about 10 to 15 °C cooler than the temperature at region 404, such that region 406 has a temperature of about 300 °C. The temperature at region 408 is about 270 °C to 280 °C. The temperature at region 408 is about 20 °C to 30 °C cooler than region 406. The lower temperature at region 408 is due to the gaps 190, 192a, and 192b (shown in FIG. 1). The temperature at region 410 is about 180 °C to 210 °C. The temperature at region 412 is about 150 °C to 170 °C.

[0033] Figure 5A is a cross-sectional view of a panel assembly 500. The panel assembly 500 can include one or more aspects described above without further recitation.

[0034] The panel assembly 500 is a modular assembly that includes one or more components. For example, the panel assembly includes a first support segment 558a and a second support segment 558b that together form a ring when engaged with each other. In one example, the first support segment 558a and the second support segment 558b each extend 180 degrees. However, other dimensions are contemplated. The first support segment 558a and the second support segment 558b surround and secure the panel 138. A concentric heating assembly 560 is embedded within the panel 138 to facilitate heating of the panel 138. In one example, the panel 138 is made by adhering (e.g., welding or brazing) two plates together with the heating assembly 560 positioned at the interface therebetween. The concentric heating assembly 560 has a connection end 562 that extends from the panel 138 to facilitate connection to a power source. The connection end 562 is positioned in a corresponding opening 594 formed in the support segment 558. The support segment 558a can have a corresponding opening 594 that facilitates positioning the connection end 562 in the same position as the support segment 558b. The support segment 558a and the support segment 558b can be secured together by a fastener 596. Figure 5AThe depicted orientation is 180 degrees from the orientation shown. Thus, the faceplate assembly 500 can be used in variously configured chambers, such as in a dual chamber platform, without chamber-specific components. Although the opening 594 is positioned at about 90 degrees from the abutment surfaces of the first and second support segments 558a, 558b, other positions are also contemplated.

[0035] Temperature sensors 508 (four shown) are disposed through each support segment 558a, 558b. The temperature sensors 508 are used to determine and regulate the temperature of the faceplate 138. In one example, the temperature sensors are on the sides of the opening 594. It is contemplated that more or less than four temperature sensors 508 can be used.

[0036] The first and second support segments 558a, 558b are connected with a mounting bracket 506. The mounting bracket 506 connects the support segments 558a, 558b by adhering to adjacent lips 162 on the first and second support segments 558a, 558b. In one example, each of the first and second support segments 558a, 558b includes two lips 162, which are at the lateral ends of the first and second support segments 558a, 558b. A plurality of holes 504 are formed through each lip 162 and through the mounting bracket 506, and are aligned with one another to accommodate a fastener therein. Each lip 162 also includes one or more notches 502 (two shown in each lip 162) for positioning and clamping the faceplate 138 within the processing chamber 100 (as shown). Figure 1A

[0037] Figure 5B One embodiment of the support segment 558a (with the support segment 558b being a mirror image) is depicted. The support segment 558a includes a main body 561 and one or more lips 162 (two shown) disposed on the outer edge 145 of the support segment 558a. The lips 162 extend radially outward from the support segment 558a and facilitate handling of the faceplate 138 (as shown). Figure 5A

[0038] In the depicted embodiment, the cantilever of the support segment 558a is divided into a plurality of segmented cantilevers 564a-564f. The plurality of cantilevers 564a-564f operate similarly to the cantilever 164 shown in Figure 5B Figure 3 The plurality of cantilevers 564a-564f extend from the inner surface 563 of the support segment 558a. The plurality of cantilevers 564a-564f provide greater surface area, resulting in higher thermal blocking efficiency, while maintaining spacing therebetween to reduce thermal mass. An opening 594 is formed through the inner surface of the support ring 158. The connection end 562 of the heating assembly 560 can be disposed with the opening 594.​​​

[0039] The embodiments described herein advantageously provide a panel that can be heated to high temperatures, such as above 350°C, with minimal sag or bow. The disclosed thermal barrier allows the temperature of the panel to be raised to high temperatures, thereby limiting the deposition of contaminant particles while maintaining the sealing ability of the seal disposed on the outside.

[0040] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure can be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A faceplate for a processing chamber, comprising: a body having a plurality of apertures formed therethrough; a heating assembly disposed within the body, the heating assembly surrounding the plurality of apertures; and a support ring disposed in the body, the support ring surrounding the heating assembly, the support ring comprising a main body and a cantilever extending radially inward from the main body, the cantilever contacting the body of the faceplate, wherein a first gap is formed between a radially inward surface of the main body of the support ring and the body of the faceplate, and a second gap is formed between an upper surface of the main body and the body of the faceplate.

2. The faceplate of claim 1, wherein the body comprises aluminum, and the support ring comprises aluminum, aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, or stainless steel.

3. The faceplate of claim 1, further wherein a gap is formed between a radially inward surface of the cantilever and the body of the faceplate.

4. The faceplate of claim 1, further wherein a gap is formed between a lower surface of the cantilever and the body of the faceplate.

5. The faceplate of claim 1, wherein the first gap and the second gap are each in a range of 0.1 mm to 5 mm.

6. The faceplate of claim 1, wherein a thickness of the cantilever is in a range of 8 mm to 20 mm.

7. A faceplate for a processing chamber, comprising: a body having a plurality of apertures formed therethrough; a heating assembly disposed within the body, the heating assembly surrounding the plurality of apertures; and a support ring disposed in the body, the support ring surrounding the heating assembly, the support ring comprising a main body and a cantilever extending radially inward from the main body, the cantilever contacting the body of the faceplate, wherein the body comprises a first extension and a second extension each extending outward from an outer surface of the body, the first extension and the second extension together defining a recess for receiving the support ring.

8. The faceplate of claim 7, each of the first extension and the second extension having a greater thickness at a radially outward edge thereof than at a radially inward edge thereof.

9. The faceplate of claim 8, wherein the radially outward edge of each of the first extension and the second extension contacts the support ring, and the radially inward edge of each of the first extension and the second extension is spaced apart from the support ring.

10. A faceplate for a processing chamber, comprising: a body having a plurality of apertures formed therethrough, the body comprising a first extension and a second extension each extending outward from an outer surface of the body, the first extension and the second extension together defining a recess, each of the first extension and the second extension having a greater thickness at a radially outward edge thereof than at a radially inward edge thereof; ​ ​ a heating assembly disposed within the body, the heating assembly encircling the plurality of holes, the heating assembly being located radially inward of the first and second extensions; and a support ring disposed in the recess of the body, the support ring including a primary body and encircling the heating assembly, wherein the radially outward edge of each of the first and second extensions contacts the support ring, and the radially inward edge of each of the first and second extensions is spaced apart from the support ring.

11. The faceplate of claim 10, wherein the body comprises aluminum, and the support ring comprises aluminum, aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, or stainless steel.

12. The faceplate of claim 11, wherein the support ring further comprises a cantilever extending radially inward from the primary body.

13. The faceplate of claim 12, further wherein a gap is formed between a radially inward surface of the cantilever and the body of the faceplate.

14. The faceplate of claim 13, wherein the gap is in a range of 0.1 mm to 5 mm.

15. The faceplate of claim 13, further wherein a gap is formed between a lower surface of the cantilever and the body of the faceplate.

16. The faceplate of claim 15, wherein the gap is in a range of 0.1 mm to 5 mm.

17. A processing chamber, comprising: a chamber body; a substrate support disposed in the chamber body; and a lid assembly disposed on the chamber body, the lid assembly including: a faceplate including: a body having a plurality of holes formed therethrough; a heating assembly disposed within the body, the heating assembly encircling the plurality of holes; and a support ring disposed in the body, the support ring encircling the heating assembly, the support ring including a primary body and a cantilever extending radially inward from the primary body, the cantilever contacting the body of the faceplate, wherein a first gap is formed between a radially inward surface of the primary body of the support ring and the body of the faceplate, and a second gap is formed between an upper surface of the primary body and the body of the faceplate.

18. The processing chamber of claim 17, wherein the body comprises aluminum, and the support ring comprises aluminum, aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, or stainless steel.

19. The faceplate of claim 17, further wherein a gap is formed between a radially inward surface of the cantilever and the body of the faceplate.

Citation Information

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