A method for preparing high-quality Al2O3 thin films deposited on graphene surfaces

Abstract

This invention provides a method for preparing a high-quality Al2O3 thin film deposited on a graphene surface. The method includes: cleaning a graphene substrate and placing it in an atomic layer deposition chamber; pretreating the atomic layer deposition chamber by introducing H2O molecules; introducing aluminum and oxygen precursors respectively to perform an atomic layer deposition process, obtaining the desired film thickness by controlling different cycle numbers; after deposition, cooling the temperature of the atomic layer deposition chamber to room temperature and removing the Al2O3 film sample. This method solves the technical problem that existing pretreatment methods often cause physical damage to the graphene surface or introduce unwanted seed layers, functional groups, and other impurities, thus preventing graphene-based devices from achieving the desired performance.

Description

Technical Field

[0001] This invention relates to the field of two-dimensional thin film material preparation, and more particularly to a method for preparing a high-quality Al2O3 thin film deposited on the surface of graphene. Background Technology

[0002] Graphene's high electron mobility and low electrical resistance have made its application in nanoelectronic devices a focus of attention. Graphene field-effect transistors (GFETs) mainly have three structures: (a) bottom-gate, (b) top-gate, and (c) dual-gate. However, regardless of the structure, graphene surfaces are incompatible with SiO2. Therefore, depositing an ultrathin, high-quality high-K dielectric (e.g., Al2O3 film) on the graphene surface is a crucial step in the fabrication of graphene field-effect transistors.

[0003] Because graphene has a very smooth surface, lacks dangling bonds, and is chemically inactive, common solutions include laser modification, physical adsorption with adhesive catalysts, molecular coating, surface functionalization, and Al2O3 film oxidation. Physical adsorption uses gases such as O3 and N2O as adhesive catalysts between the graphene surface and the Al2O3 film, enabling the film to deposit on the graphene surface. Molecular coating uses organic molecules or macromolecules to cover the graphene surface, providing adhesion sites for subsequent Al2O3 film deposition. Surface functionalization uses plasma O or O3 to functionalize the graphene surface, and then transfers the functionalized graphene as a seed layer. Al2O3 film oxidation involves first depositing an Al-containing metal film, then removing it and oxidizing it to successfully deposit an Al2O3 film on the graphene surface.

[0004] However, in the process of implementing the inventive technical solution in the embodiments of this application, the inventors of this application discovered that the above-mentioned technology has at least the following technical problems:

[0005] Existing pretreatment techniques can cause physical damage to the graphene surface or introduce unwanted seed layers, functional groups, and other impurities, thus preventing graphene-based devices from achieving the desired effects. Summary of the Invention

[0006] This application provides a method for preparing a high-quality Al2O3 thin film deposited on the surface of graphene, which solves the technical problem that existing pretreatment methods cause certain physical damage to the graphene surface or introduce unwanted seed layers, functional groups and other impurities, thus preventing graphene-based devices from achieving the desired effect.

[0007] In view of the above problems, the present invention is proposed to provide a solution that overcomes or at least partially solves the above problems.

[0008] On one hand, this application provides a method for efficient extraction of polyphenols from walnut green skin by electron beam irradiation. The method includes: cleaning a graphene substrate and placing it into an atomic layer deposition chamber; pretreating the atomic layer deposition chamber by introducing H2O molecules; introducing aluminum precursor and oxygen precursor respectively to perform an atomic layer deposition process, and obtaining the required film thickness by controlling different cycle numbers; after deposition, lowering the temperature of the atomic layer deposition chamber to room temperature and taking out the Al2O3 film sample.

[0009] One or more technical solutions provided in the embodiments of this application have at least the following technical effects or advantages:

[0010] The process involves cleaning the graphene substrate before placing it into an atomic layer deposition (ALD) chamber; pre-treating the chamber by introducing H2O molecules; then introducing aluminum and oxygen precursors separately for ALD deposition. By controlling different cycle numbers, the desired film thickness is obtained. After deposition, the temperature of the ALD chamber is lowered to room temperature, and the Al2O3 film sample is removed. This achieves the technical effect of filling the deposition chamber with H2O molecules before deposition, providing nucleation sites for subsequent film deposition on the graphene surface without damaging the graphene structure or introducing new impurities. ALD technology allows for the deposition of a high-quality Al2O3 film on the graphene surface, thereby enabling graphene-based devices to achieve the desired performance.

[0011] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, specific embodiments of this application are given below. Attached Figure Description

[0012] Figure 1 This is a schematic flowchart illustrating a method for preparing a high-quality Al2O3 thin film deposited on a graphene surface according to an embodiment of this application. Detailed Implementation

[0013] This application provides a method for extracting terpenoids from walnut husks, solving the technical problem that existing pretreatment methods often cause physical damage to the graphene surface or introduce unwanted seed layers, functional groups, and other impurities, thus preventing graphene-based devices from achieving the desired effects. The method achieves this by filling the deposition chamber with H2O molecules before deposition, providing nucleation sites for subsequent thin film deposition on the graphene surface without damaging the graphene structure or introducing new impurities. Atomic layer deposition (ALD) technology is then used to deposit a high-quality Al2O3 film on the graphene surface, enabling the graphene-based device to achieve the intended performance.

[0014] Application Overview

[0015] Graphene's high electron mobility and low electrical resistance have made its application in nanoelectronic devices a focus of attention. Graphene field-effect transistors (GFETs) mainly have three structures: (a) bottom-gate, (b) top-gate, and (c) dual-gate. However, regardless of the structure, graphene surfaces are incompatible with SiO2. Therefore, depositing an ultrathin, high-quality high-K dielectric (e.g., Al2O3 film) on the graphene surface is a crucial step in the fabrication of graphene field-effect transistors.

[0016] Because graphene has a very smooth surface, lacks dangling bonds, and is chemically inactive, common solutions include laser modification, physical adsorption with adhesive catalysts, molecular coating, surface functionalization, and Al2O3 film oxidation. Physical adsorption uses gases such as O3 and N2O as adhesive catalysts between the graphene surface and the Al2O3 film, enabling the film to deposit on the graphene surface. Molecular coating uses organic molecules or macromolecules to cover the graphene surface, providing adhesion sites for subsequent Al2O3 film deposition. Surface functionalization uses plasma O or O3 to functionalize the graphene surface, and then transfers the functionalized graphene as a seed layer. Al2O3 film oxidation involves first depositing an Al-containing metal film, then removing it and oxidizing it to successfully deposit an Al2O3 film on the graphene surface.

[0017] However, existing technologies have pretreatment methods that cause physical damage to the graphene surface or introduce unwanted seed layers, functional groups, and other impurities, thus preventing graphene-based devices from achieving the desired effects.

[0018] To address the aforementioned technical problems, the overall approach of the technical solution provided in this application is as follows:

[0019] This application provides a method for preparing a high-quality Al2O3 thin film deposited on a graphene surface. The method includes: cleaning a graphene substrate and placing it into an atomic layer deposition chamber; pretreating the atomic layer deposition chamber by introducing H2O molecules; introducing aluminum and oxygen precursors respectively to perform an atomic layer deposition process, and obtaining the desired film thickness by controlling different cycle numbers; after deposition, cooling the temperature of the atomic layer deposition chamber to room temperature and removing the Al2O3 thin film sample.

[0020] To better understand the above technical solutions, the following will provide a detailed explanation of the technical solutions in conjunction with the accompanying drawings and specific implementation methods.

[0021] Example 1

[0022] like Figure 1 As shown in the embodiments of this application, a method for preparing a high-quality Al2O3 thin film deposited on the surface of graphene is provided, wherein the method includes:

[0023] Step S100: After cleaning the graphene substrate, place it into the atomic layer deposition chamber;

[0024] According to the present invention, the method step S100 further includes:

[0025] Step S110: The graphene substrate is ultrasonically cleaned in acetone, ethanol and deionized water respectively, dried and then placed in the atomic layer deposition chamber.

[0026] Specifically, the graphene substrate is cleaned by immersing it in acetone, ethanol, and deionized water for ultrasonic cleaning. After cleaning, the substrate is dried and placed in the deposition chamber. The cleaning process removes impurities from the surface of the graphene substrate to avoid introducing impurities and facilitates subsequent substrate pretreatment.

[0027] Step S200: H2O molecules are introduced into the atomic layer deposition chamber for pretreatment;

[0028] According to the present invention, the method step S200 further includes:

[0029] Step S210: The time for introducing H2O molecules is 0.05s-0.1s, the reaction is 5s-10s, and then a 5s-10s purging is performed. This cycle is repeated 20-100 times.

[0030] Specifically, after the substrate is placed, the equipment needs to be evacuated to a vacuum state. The precursor, gas filling pipe, and reaction chamber are heated to control the process vacuum level. Then, H2O molecules are introduced into the atomic layer deposition chamber to pretreat the graphene substrate, serving as attachment sites required for Al2O3 film deposition. The H2O molecule introduction time is 0.05s-0.1s, the reaction time is 5s-10s, followed by a 5s-10s purging cycle, repeated 20-100 times. By pretreating the deposition chamber with H2O molecules before deposition, high-quality alumina films can be deposited on the graphene surface using atomic layer deposition technology without damaging the graphene structure or introducing new impurities.

[0031] Step S300: Aluminum precursor and oxygen precursor are introduced separately to carry out atomic layer deposition process. By controlling different cycle numbers, the required film thickness is obtained.

[0032] According to the present invention, the aluminum precursor and the oxygen precursor respectively include the organic precursor trimethylaluminum (Al(CH3)3, TMA) and the inorganic precursor water (H2O).

[0033] According to the present invention, the method step S300 further includes:

[0034] Step S310: The organic precursor trimethylaluminum (Al(CH3)3, TMA) is introduced for 0.01-0.03 s, reacted for 25-35 s, and then N2 is purged for 25-35 s. The inorganic precursor water (H2O) is introduced for 0.02 s, reacted for 3-6 s, and finally N2 is purged for 25-35 s, completing one growth cycle of the Al2O3 thin film sample.

[0035] Specifically, after pretreatment, aluminum and oxygen precursors are introduced separately for atomic layer deposition. The aluminum source is the organic precursor trimethylaluminum (Al(CH3)3, TMA), and the oxygen source is the inorganic precursor water (H2O). Inert gas N2 is used as both the carrier gas and the purge gas. The organic precursor trimethylaluminum (Al(CH3)3, TMA) is introduced for 0.01–0.03 s, reacts for 25–35 s, and is then purged with N2 for 25–35 s. The inorganic precursor water (H2O) is introduced for 0.02 s, reacts for 3–6 s, and is then purged with N2 for 25–35 s. This completes one growth cycle of the Al2O3 thin film sample. Within one growth cycle, the aluminum precursor is introduced first for purging, followed by the oxygen precursor for purging. The source and purging times are controlled according to the size of the equipment chamber. Depending on the required film thickness, precise control can be achieved by controlling the number of reaction cycles.

[0036] Step S400: After deposition is completed, the temperature of the atomic layer deposition chamber is reduced to room temperature, and the Al2O3 thin film sample is removed.

[0037] Specifically, after deposition is completed, the temperature of the atomic layer deposition chamber is reduced to room temperature, and the grown Al2O3 film sample is taken out to prepare a high-quality alumina film deposited on the graphene surface using atomic layer deposition technology. Films grown by atomic layer deposition technology have significant advantages in terms of surface flatness, shape preservation, and uniformity.

[0038] According to the present invention, before the pretreatment by introducing H2O molecules into the atomic layer deposition chamber, the method step S200 further includes:

[0039] Step S220: Evacuate the atomic layer deposition chamber to a vacuum level of 5 × 10⁻⁶. -3 The atomic layer deposition chamber, the gas filling pipe, the aluminum precursor, and the oxygen precursor are heated to a predetermined temperature and held for 0.5 to 1.5 hours. While holding the temperature, the gas filling pipe is opened to maintain the pressure in the atomic layer deposition chamber at 0.1 to 0.2 Torr.

[0040] Specifically, after the substrate is placed, the equipment needs to be evacuated to a vacuum state before H2O molecules are introduced into the atomic layer deposition chamber for pretreatment. That is, before introducing H2O molecules into the atomic layer deposition chamber for pretreatment, the vacuum level of the deposition chamber is evacuated to 5 × 10⁻⁶. -3 Below Torr, the atomic layer deposition chamber, the gas filling pipe, the aluminum precursor, and the oxygen precursor are heated to the required predetermined temperature. The precursors are heated according to their reactivity to ensure smooth source emergence during the growth process. The temperature is maintained for 0.5 to 1.5 hours. While maintaining the temperature, the gas filling pipe is opened, and the gas flow rate is adjusted to maintain the pressure in the atomic layer deposition chamber at 0.1 to 0.2 Torr to ensure the effectiveness of subsequent H2O molecule pretreatment.

[0041] According to the present invention, the method step S300 further includes:

[0042] Step S320: Using inert gas N2 as the carrier gas, the aluminum precursor and the oxygen precursor are introduced into the atomic layer deposition chamber during the growth process to carry out the atomic layer deposition process.

[0043] According to the present invention, the method step S320 further includes:

[0044] Step S321: The temperature of the gas filling pipe is set between 95 and 105°C, and the pressure of the atomic layer deposition chamber during the reaction process is controlled between 0.1 and 0.2 Torr by adjusting the flow rate of N2 gas.

[0045] Specifically, the temperature of the gas filling pipe is set between 95 and 105°C, and the pressure in the atomic layer deposition chamber during the reaction process is controlled between 0.1 and 0.2 Torr by adjusting the N2 gas flow rate. Using inert gas N2 as the carrier gas, the aluminum precursor Al(CH3)3 and the oxygen precursor H2O are introduced into the atomic layer deposition chamber during the growth process to perform atomic layer deposition. This completes one growth cycle of the Al2O3 thin film sample, generating a high-quality alumina thin film through atomic layer deposition technology.

[0046] In summary, the method for preparing a high-quality Al2O3 thin film deposited on the surface of graphene provided in this application has the following technical advantages:

[0047] The process involves cleaning the graphene substrate before placing it into an atomic layer deposition (ALD) chamber; pre-treating the chamber by introducing H2O molecules; then introducing aluminum and oxygen precursors separately for ALD deposition. By controlling different cycle numbers, the desired film thickness is obtained. After deposition, the temperature of the ALD chamber is lowered to room temperature, and the Al2O3 film sample is removed. This achieves the technical effect of filling the deposition chamber with H2O molecules before deposition, providing nucleation sites for subsequent film deposition on the graphene surface without damaging the graphene structure or introducing new impurities. ALD technology allows for the deposition of a high-quality Al2O3 film on the graphene surface, thereby enabling graphene-based devices to achieve the desired performance.

[0048] Example 2

[0049] The graphene substrate was ultrasonically cleaned in acetone, ethanol, and deionized water to remove surface impurities. After cleaning, the substrate was dried and placed in the deposition chamber, where a vacuum of 5 × 10⁻⁶ was applied. -3 Below Torr, the precursor, gas filling pipe, and reaction chamber are heated and maintained at that temperature for one hour. While maintaining this temperature, the gas filling pipe is opened, and the gas flow rate is adjusted to control the process vacuum at 0.1 Torr. Al(CH3)3 is selected as the aluminum precursor, and H2O as the oxygen precursor. The temperature of Al(CH3)3 is set at 100℃, H2O at room temperature, the gas filling pipe temperature is set at 100℃, and the deposition chamber temperature is set at 120℃. H2O molecules are introduced into the chamber for pretreatment for 0.05 s, followed by a 7.5 s reaction, and then a 10 s purging cycle, repeated 20 times.

[0050] After the above conditions are met, Al(CH3)3 is introduced for 0.02 s, reacted for 30 s, followed by a 30 s N2 purging. H2O is then introduced for 0.02 s, reacted for 5 s, and finally, N2 is purged for 30 s. This completes one growth cycle. Depending on the desired film thickness, the number of reaction cycles can be precisely controlled. After deposition, the deposition chamber is cooled to room temperature, and the grown film is removed.

[0051] In summary, by pretreating the graphene surface by filling the deposition chamber with H2O molecules before deposition, high-quality alumina films can be deposited on the graphene surface using atomic layer deposition technology without damaging the graphene structure or introducing new impurities.

[0052] Example 3

[0053] The graphene substrate was ultrasonically cleaned in acetone, ethanol, and deionized water to remove surface impurities. After cleaning, the substrate was dried and placed in the deposition chamber, where a vacuum of 5 × 10⁻⁶ was applied. -3 Below Torr, the precursor, gas filling pipe, and reaction chamber are heated and maintained at that temperature for one hour. While maintaining this temperature, the gas filling pipe is opened, and the gas flow rate is adjusted to control the process vacuum at 0.1 Torr. Al(CH3)3 is selected as the aluminum precursor, and H2O as the oxygen precursor. The temperature of Al(CH3)3 is set at 100℃, H2O at room temperature, the gas filling pipe temperature is set at 100℃, and the deposition chamber temperature is set at 120℃. H2O molecules are introduced into the chamber for pretreatment for 0.075 s, followed by a 5 s reaction, and then a 7.5 s purging cycle, repeated 100 times.

[0054] After the above conditions are met, Al(CH3)3 is introduced for 0.02 s, reacted for 30 s, followed by a 30 s N2 purging. H2O is then introduced for 0.02 s, reacted for 5 s, and finally, N2 is purged for 30 s. This completes one growth cycle. Depending on the desired film thickness, the number of reaction cycles can be precisely controlled. After deposition, the deposition chamber is cooled to room temperature, and the grown film is removed.

[0055] In summary, by pretreating the graphene surface by filling the deposition chamber with H2O molecules before deposition, high-quality alumina films can be deposited on the graphene surface using atomic layer deposition technology without damaging the graphene structure or introducing new impurities.

[0056] Example 4

[0057] The graphene substrate was ultrasonically cleaned in acetone, ethanol, and deionized water to remove surface impurities. After cleaning, the substrate was dried and placed in the deposition chamber, where a vacuum of 5 × 10⁻⁶ was applied. -3 Below Torr, the precursor, gas filling pipe, and reaction chamber are heated and maintained at that temperature for one hour. While maintaining this temperature, the gas filling pipe is opened, and the gas flow rate is adjusted to control the process vacuum at 0.1 Torr. Al(CH3)3 is selected as the aluminum precursor, and H2O as the oxygen precursor. The temperature of Al(CH3)3 is set at 100℃, H2O at room temperature, the gas filling pipe temperature is set at 100℃, and the deposition chamber temperature is set at 120℃. H2O molecules are introduced into the chamber for pretreatment for 0.1 s, followed by a 10 s reaction, then a 5 s purging cycle, repeated 60 times.

[0058] After the above conditions are met, Al(CH3)3 is introduced for 0.02 s, reacted for 30 s, followed by a 30 s N2 purging. H2O is then introduced for 0.02 s, reacted for 5 s, and finally, N2 is purged for 30 s. This completes one growth cycle. Depending on the desired film thickness, the number of reaction cycles can be precisely controlled. After deposition, the deposition chamber is cooled to room temperature, and the grown film is removed.

[0059] In summary, by pretreating the graphene surface by filling the deposition chamber with H2O molecules before deposition, high-quality alumina films can be deposited on the graphene surface using atomic layer deposition technology without damaging the graphene structure or introducing new impurities.

[0060] Example 5

[0061] The graphene substrate was ultrasonically cleaned in acetone, ethanol, and deionized water to remove surface impurities. After cleaning, the substrate was dried and placed in the deposition chamber, where a vacuum of 5 × 10⁻⁶ was applied. -3 Below Torr, the precursor, gas filling pipe, and reaction chamber are heated and maintained at that temperature for one hour. While maintaining this temperature, the gas filling pipe is opened, and the gas flow rate is adjusted to control the process vacuum at 0.1 Torr. Al(CH3)3 is selected as the aluminum precursor, and H2O as the oxygen precursor. The temperature of Al(CH3)3 is set at 100℃, H2O at room temperature, the gas filling pipe temperature is set at 100℃, and the deposition chamber temperature is set at 120℃. H2O molecules are introduced into the chamber for pretreatment for 0.075 s, followed by a 7.5 s reaction, then a 5 s purging cycle, repeated 60 times.

[0062] After the above conditions are met, Al(CH3)3 is introduced for 0.02 s, reacted for 30 s, followed by a 30 s N2 purging. H2O is then introduced for 0.02 s, reacted for 5 s, and finally, N2 is purged for 30 s. This completes one growth cycle. Depending on the desired film thickness, the number of reaction cycles can be precisely controlled. After deposition, the deposition chamber is cooled to room temperature, and the grown film is removed.

[0063] In summary, by pretreating the graphene surface by filling the deposition chamber with H2O molecules before deposition, high-quality alumina films can be deposited on the graphene surface using atomic layer deposition technology without damaging the graphene structure or introducing new impurities.

[0064] Example 6

[0065] The graphene substrate was ultrasonically cleaned in acetone, ethanol, and deionized water to remove surface impurities. After cleaning, the substrate was dried and placed in the deposition chamber, where a vacuum of 5 × 10⁻⁶ was applied. -3 Below Torr, the precursor, gas filling pipe, and reaction chamber are heated and maintained at that temperature for one hour. While maintaining this temperature, the gas filling pipe is opened, and the gas flow rate is adjusted to control the process vacuum at 0.1 Torr. Al(CH3)3 is selected as the aluminum precursor, and H2O as the oxygen precursor. The temperature of Al(CH3)3 is set at 100℃, H2O at room temperature, the gas filling pipe temperature is set at 100℃, and the deposition chamber temperature is set at 120℃. H2O molecules are introduced into the chamber for pretreatment for 0.05 s, followed by a 7.5 s reaction, and then a 7.5 s purging cycle, repeated 100 times.

[0066] After the above conditions are met, Al(CH3)3 is introduced for 0.02 s, reacted for 30 s, followed by a 30 s N2 purging. H2O is then introduced for 0.02 s, reacted for 5 s, and finally, N2 is purged for 30 s. This completes one growth cycle. Depending on the desired film thickness, the number of reaction cycles can be precisely controlled. After deposition, the deposition chamber is cooled to room temperature, and the grown film is removed.

[0067] In summary, by pretreating the graphene surface by filling the deposition chamber with H2O molecules before deposition, high-quality alumina films can be deposited on the graphene surface using atomic layer deposition technology without damaging the graphene structure or introducing new impurities.

[0068] Although preferred embodiments of the invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of the invention.

[0069] Obviously, those skilled in the art can make various modifications and variations to the embodiments of the present invention without departing from the spirit and scope of the embodiments of the present invention. Thus, if these modifications and variations to the embodiments of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention also intends to include these modifications and variations.

[0070] The above description is merely a specific implementation of the embodiments of the present invention, but the protection scope of the embodiments of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the embodiments of the present invention should be included within the protection scope of the embodiments of the present invention. Therefore, the protection scope of the embodiments of the present invention should be determined by the protection scope of the claims.

Claims

1. A method for preparing a high-quality Al2O3 thin film deposited on a graphene surface, wherein, The method includes: The graphene substrate is cleaned and then placed in the atomic layer deposition chamber. H2O molecules are introduced into the atomic layer deposition chamber for pretreatment; Aluminum precursor and oxygen precursor are introduced separately to carry out atomic layer deposition process. By controlling different cycle numbers, the required film thickness is obtained. After deposition is complete, the temperature of the atomic layer deposition chamber is reduced to room temperature, and the Al2O3 thin film sample is removed. Before introducing H2O molecules into the atomic layer deposition chamber for pretreatment, the method further includes: The vacuum level of the atomic layer deposition chamber is evacuated to below 5×10-3 Torr, and the atomic layer deposition chamber, the gas filling pipe, the aluminum precursor and the oxygen precursor are heated to a predetermined temperature and held for 0.5 to 1.5 hours. While holding for 0 hours, the gas filling pipe is opened to maintain the pressure of the atomic layer deposition chamber at 0.1 to 0.2 Torr. The pretreatment by introducing H2O molecules into the atomic layer deposition chamber includes: The H2O molecules are introduced for 0.05s-0.1s, reacted for 5s-10s, and then purged for 5s-10s. This cycle is repeated 20-100 times.

2. The method as described in claim 1, wherein, The process of cleaning the graphene substrate and placing it into the atomic layer deposition chamber includes: The graphene substrate was ultrasonically cleaned in acetone, ethanol and deionized water respectively, and then dried and placed in the atomic layer deposition chamber.

3. The method as described in claim 1, wherein, The aluminum precursor and oxygen precursor respectively include the organic precursor trimethylaluminum (Al(CH3)3, TMA) and the inorganic precursor water (H2O).

4. The method of claim 3, wherein, The process of separately introducing aluminum precursor and oxygen precursor for atomic layer deposition includes: The organic precursor trimethylaluminum (Al(CH3)3, TMA) is introduced for 0.01–0.03 s, reacted for 25–35 s, and then purged with N2 for 25–35 s. The inorganic precursor water (H2O) is introduced for 0.02 s, reacted for 3–6 s, and finally purged with N2 for 25–35 s, thus completing one growth cycle of the Al2O3 thin film sample.

5. The method of claim 1, wherein, The atomic layer deposition process, which involves separately introducing aluminum and oxygen precursors, further includes: Using inert gas N2 as the carrier gas, the aluminum precursor and the oxygen precursor are introduced into the atomic layer deposition chamber during the growth process to carry out the atomic layer deposition process.

6. The method of claim 5, wherein, The method further includes: The temperature of the gas filling pipe is set between 95 and 105°C, and the pressure in the atomic layer deposition chamber during the reaction process is controlled between 0.1 and 0.2 Torr by adjusting the flow rate of N2 gas.

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