Filtering structure and manufacturing method of any combination of UV, R, G, B, IR

Abstract

A filter structure and a manufacturing method thereof for any combination of UV, R, G, B and IR, comprising a substrate and a filter layer, the substrate being a wafer semiconductor sensing element or a light-transmitting element product, the filter layer being formed on one side of the substrate and composed of a plurality of basic units arranged in a matrix, each basic unit comprising a plurality of pixel filter films formed by vacuum plating, the plurality of pixel filter films comprising any combination of UV pixel filter film, R pixel filter film, G pixel filter film, B pixel filter film or IR pixel filter film, and the plurality of pixel filter films allowing only light of corresponding wavelength to pass, and the manufacturing method thereof being formed by cooperation of photoresist shielding and vacuum plating. Thus, the filter film has better uniformity, provides a wider wavelength range, forms more images of different wavelengths, has higher sensitivity and resolution, and meets the specification requirements of optics.

Description

Technical Field

[0001] This invention relates to the technical field of filter structures and fabrication methods for optical sensors such as ambient light sensor (ALS), proximity sensor (PS), RGB color temperature sensor, and gesture sensor. Specifically, it relates to a filter structure and fabrication method that enables better uniformity (uniformity ±5nm) of the filter film and provides a wider wavelength range to form images with more different wavelengths, allowing for higher sensitivity and resolution that meets optical specifications for any combination of UV, R, G, B, and IR filters. Background Technology

[0002] Traditional optical sensors, such as visible light camera modules, require infrared cutoff filters to filter out unnecessary low-frequency near-infrared light to prevent infrared light from affecting the visible light portion and producing false colors or ripples. However, these traditional visible light camera modules do not have UV or IR pixels.

[0003] Commonly known color filters and their manufacturing methods, such as those described in Taiwan Patent No. 100112527, primarily utilize inkjet printing. The color filter film thickness is approximately 5 micrometers, resulting in wasteful use of pigment photoresist and poor resolution and positional reproducibility. As substrate sizes have increased, the initial photoresist coating method involved a central tube coating followed by spin coating, evolving to a slit coating followed by spin coating. The aim is to reduce photoresist usage. However, future substrate size increases will cause the filter film's uniformity (±2%) and optical transmittance and wavelength to fail to meet specifications (cutoff band below 1% transmittance). Excessive cutoff band transmittance causes noise. It is known that silver is used in metal color filters, which is environmentally unstable and easily corroded.

[0004] In view of this, the inventors have deeply conceived and actively researched, improved and tested the aforementioned problems to develop and design this invention. Summary of the Invention

[0005] The main objective of this invention is to effectively solve the problems existing in known color filters and their manufacturing methods, such as the inability to meet the specifications for filter film uniformity (±2%) when manufacturing large substrates, and the inability to meet the specifications for optical transmittance and wavelength (cutoff band is lower than 1% of transmittance), thereby providing a filter structure for any combination of UV, R, G, B, and IR.

[0006] To achieve the above objectives, the present invention provides a filter structure for any combination of UV, R, G, B, and IR, comprising a substrate and a filter layer, wherein the substrate is a product of a wafer semiconductor sensing element or a light-transmitting element. The filter layer is formed on one side of the substrate and consists of a matrix of several basic units. Each basic unit includes several pixel filters formed by vacuum deposition. These pixel filters include any combination of a UV pixel filter, an R pixel filter, a G pixel filter, a B pixel filter, or an IR pixel filter, and the pixel filters allow only light of the corresponding wavelength to pass through.

[0007] This invention also provides a method for fabricating a filter structure with any combination of UV, R, G, B, and IR, comprising: (a) forming a photoresist shield on a substrate: forming a photoresist shield on one side of a substrate, and providing a plurality of perforated coating areas on the photoresist shield at the location where a pixel filter film is to be deposited; (b) vacuum coating: forming a plurality of pixel filter films, consisting of a plurality of rubidium layers and a plurality of high refractive index layers of different thicknesses stacked together, on the coating areas using a vacuum coating method; and (c) coating a photoresist: applying a photoresist to the area after the pixel filter film is deposited. (d) Etching: Using etching, a plurality of other coated areas are formed on the photoresist shield at the location where a plurality of other pixel filters are to be deposited; (e) Vacuum coating again: Using vacuum coating, a plurality of other pixel filters are formed on the plurality of other coated areas formed by etching, consisting of a plurality of rubidium (Rb) layers of different thicknesses and a plurality of higher refractive index layers stacked on top of each other; (f) Removing the photoresist shield: The photoresist shield is removed to complete the process.

[0008] Following step (e), steps (c) to (e) can be repeated as needed, and then step (f) can be performed to create a filter structure composed of three or more pixel filter films.

[0009] The UV, R, G, B, and IR arbitrary combination filter structure and manufacturing method provided by this invention can achieve uniformity of less than ±5nm even when manufacturing large-sized substrates through vacuum coating and photoresist shielding, meeting the requirement of cutoff band transmittance of less than 1%. This arbitrary combination of UV, R, G, B, and IR filter structure has higher transmittance and narrower passband, resulting in more vivid and brighter colors. When applied to the sensing chips of optical sensors such as ambient light sensors (ALS), proximity sensors (PS), RGB color temperature sensors, and gesture sensors, it can make the response time faster, significantly improve the color discrimination and adjustment sensitivity compared to the same product, and greatly enhance the brightness presentation of light contrast. Some companies have even shone light on fruits (such as oranges and kiwis) and used the sensing chip of this application and AI judgment to accurately identify the ripeness of the inner peel of the fruit, so as to realize fruit ripeness identification / grading and quickly reduce the cost of manual identification in the past. Attached Figure Description

[0010] Figure 1 This is a schematic diagram of the structure of the present invention.

[0011] Figure 2 This is a schematic diagram of the basic unit configuration of the filter layer of the present invention.

[0012] Figure 3 This is a spectral diagram of the UV pixel filter film of the present invention.

[0013] Figure 4 This is a spectral diagram of the R-pixel filter film of the present invention.

[0014] Figure 5 This is a spectral diagram of the G-pixel filter film of the present invention.

[0015] Figure 6 This is a spectral diagram of the B-pixel filter film of the present invention.

[0016] Figure 7 This is a spectral diagram of the IR pixel filter film of the present invention.

[0017] Figure 8 This is a schematic diagram of the manufacturing process of the manufacturing method of the present invention.

[0018] Figure 9 This is a schematic diagram of the fabrication process of the photoresist shielding of the present invention.

[0019] Figure 10 This is a schematic diagram of the vacuum sputtering reactive coating system of the present invention.

[0020] Symbol explanation:

[0021] 10:Substrate

[0022] 20: Filter layer

[0023] 21: Basic Unit

[0024] 22: Pixel filter film

[0025] 23: Rubidium (Rb) layer

[0026] 24: High Refractive Index Layer

[0027] 30: Vacuum sputtering reactive coating system

[0028] 31: Roller

[0029] 32: Coating chamber

[0030] 33: Sputtering source

[0031] 34: Reaction source region

[0032] 35: Target material. Detailed Implementation

[0033] Please see Figure 1 and Figure 2 The diagram illustrates an arbitrary combination of UV, R, G, B, and IR filter structure according to the present invention, comprising a substrate 10 and a filter layer 20, wherein:

[0034] The substrate 10 is a wafer semiconductor sensing element.

[0035] The filter layer 20 is formed on one side of the substrate 10 and is composed of a plurality of basic units 21 arranged in a matrix. Each basic unit 21 includes a plurality of pixel filter films 22 formed by vacuum deposition. The plurality of pixel filter films 22 includes any plurality of a UV pixel filter film, an R pixel filter film, a G pixel filter film, a B pixel filter film, and an IR pixel filter film, and the plurality of pixel filter films can only allow light of the corresponding wavelength to pass through.

[0036] The combination of the plurality of pixel filter films 22 in each basic unit 21 of the present invention can be any two, three, or more of the following: UV pixel filter film, R pixel filter film, G pixel filter film, B pixel filter film, and IR pixel filter film. This embodiment uses four of these combinations as examples. Wherein:

[0037] The UV pixel filter is formed by stacking multiple rubidium (Rb) layers 23 and multiple high refractive index layers 24 with a higher refractive index than the rubidium (Rb) layers, so that a passband is formed in the wavelength range of 300nm to 1100nm, the center wavelength of the passband is in the range of 300nm to 400nm, the transmittance of the remaining cutoff bands is less than 1% on average, and the transmittance of the center wavelength of the passband is greater than 50% when the incident angle is 0°.

[0038] The R-pixel filter film is formed by stacking multiple rubidium (Rb) layers 23 and multiple high refractive index layers 24 with a higher refractive index than the rubidium (Rb) layers, so that it forms a passband in the wavelength range of 300nm to 1100nm, the center wavelength of the passband is in the range of 580nm to 740nm, the transmittance of the remaining cutoff band is less than 1%, and the transmittance of the center wavelength of the passband is greater than 55% when the incident angle is 0°.

[0039] The G-pixel filter is formed by stacking multiple rubidium (Rb) layers 23 and multiple high refractive index layers 24 with a higher refractive index than the rubidium (Rb) layers, so that a passband is formed in the wavelength range of 300nm to 1100nm, the center wavelength of the passband is in the range of 500nm to 565nm, the transmittance of the remaining cutoff band is less than 1%, and the transmittance of the center wavelength of the passband is greater than 55% when the incident angle is 0°.

[0040] The B-pixel filter is formed by stacking multiple rubidium (Rb) layers 23 and multiple high refractive index layers 24 with a higher refractive index than the rubidium (Rb) layers, so that it has a passband in the wavelength range of 300nm to 1100nm, the center wavelength of the passband is in the range of 400nm to 500nm, the transmittance of the remaining cutoff band is less than 1%, and the transmittance of the center wavelength of the passband is greater than 55% when the incident angle is 0°.

[0041] The IR pixel filter is formed by stacking a rubidium (Rb) layer 23 and a plurality of high refractive index layers 24 with a higher refractive index than the rubidium (Rb) layer, so as to have a passband formed in the wavelength range of 300nm to 1100nm. The center wavelength of this passband only partially overlaps in the infrared wavelength range of 800nm ​​to 1100nm to form a passband, and the transmittance of the remaining cutoff band is less than 1%. The transmittance of the center wavelength of this passband is greater than 30% when the incident angle is 0°.

[0042] The aforementioned complex pixel filter film 22, wherein the complex rubidium (Rb) layer 23 has a refractive index of 0.25 to 0.13 and an extinction coefficient of 0.24 to 5.58 in the wavelength range of 350 nm to 2000 nm. The complex high-refractive-index layer 24 can be any one of titanium pentoxide (Ti3O5), titanium dioxide (TiO2), niobium pentoxide (Nb2O5), tantalum pentoxide (Ta2O5-5#), mixed film material (H4), and mixtures thereof. Furthermore, the complex high-refractive-index layer 24 has a refractive index greater than 1.6 in the wavelength range of 350 nm to 1100 nm and an extinction coefficient close to 0. By combining complex rubidium (Rb) layers 23 and complex high-refractive-index layers 24 of different thicknesses and numbers, the UV pixel filter film, the R pixel filter film, the G pixel filter film, the B pixel filter film, and the IR pixel filter film can be formed.

[0043] The following examples illustrate various structural conditions of the UV pixel filter, the R pixel filter, the G pixel filter, the B pixel filter, and the IR pixel filter.

[0044] The UV pixel filter film is composed of multiple rubidium (Rb) layers 23 and multiple high-refractive-index layers 24 stacked together. The multiple high-refractive-index layers 24 can be any one of titanium pentoxide (Ti3O5), titanium dioxide (TiO2), niobium pentoxide (Nb2O5), tantalum pentoxide (Ta2O5-5#), or a mixed film material (H4). For example, the titanium pentoxide (Ti3O5) layer has a refractive index greater than 1.6 and an extinction coefficient close to 0 in the wavelength range of 350 nm to 1100 nm. The rubidium (Rb) layer has a refractive index of 0.25 to 0.13 and an extinction coefficient of 0.24 to 5.58 in the wavelength range of 350 nm to 2000 nm. Its structural conditions are shown in any of the cases in Table 1 below.

[0045] Table 1 UV pixel filter structure

[0046]

[0047] Figure 3 As shown, the UV pixel filter film has a passband formed in the wavelength range of 300nm to 1100nm, the center wavelength of the passband is between 300nm and 400nm, the transmittance of the center wavelength of the passband is greater than 50% when the incident angle is 0°, and the average transmittance of the remaining cutoff bands is less than 1%.

[0048] The R-pixel filter film is composed of multiple rubidium (Rb) layers 23 and high-refractive-index layers 24 stacked together. The high-refractive-index layers 24 are made of any one of the following: titanium pentoxide (Ti3O5), titanium dioxide (TiO2), niobium pentoxide (Nb2O5), tantalum pentoxide (Ta2O5-5#), or a mixed film material (H4). For example, the titanium pentoxide (Ti3O5) layer has a refractive index greater than 1.6 and an extinction coefficient close to 0 in the wavelength range of 350 nm to 1100 nm. The rubidium (Rb) layers have a refractive index of 0.25 to 0.13 and an extinction coefficient of 0.24 to 5.58 in the wavelength range of 350 nm to 2000 nm. The structural conditions are as follows: (See Table 2 for any of the following cases.)

[0049] Table 2 R-pixel filter structure

[0050]

[0051]

[0052] like Figure 4 As shown, the R-pixel filter film has a passband formed in the wavelength range of 300nm to 1100nm, the center wavelength of the passband is in the range of 580nm to 740nm, the transmittance of the center wavelength of the passband is greater than 55% when the incident angle is 0°, and the transmittance of the remaining cutoff bands is less than 1%.

[0053] The G-pixel filter film is composed of multiple rubidium (Rb) layers 23 and high-refractive-index layers 24 stacked together. The high-refractive-index layers 24 are any one of titanium trioxide (Ti3O5), titanium dioxide (TiO2), niobium pentoxide (Nb2O5), tantalum pentoxide (Ta2O5), or a mixed film material (H4). For example, the titanium trioxide (Ti3O5) layer has a refractive index greater than 1.6 and an extinction coefficient close to 0 in the wavelength range of 350 nm to 1100 nm. The rubidium (Rb) layers have a refractive index of 0.25 to 0.13 and an extinction coefficient of 0.24 to 5.58 in the wavelength range of 350 nm to 2000 nm. Its structural conditions are any one of the following three cases:

[0054] Table 3 G-pixel filter structure

[0055]

[0056]

[0057] like Figure 5As shown, the G-pixel filter film has a passband formed in the wavelength range of 300nm to 1100nm, the center wavelength of the passband is in the range of 500nm to 565nm, the transmittance of the center wavelength of the passband is greater than 55% when the incident angle is 0°, and the transmittance of the remaining cutoff bands is less than 1%.

[0058] The B-pixel filter film is composed of multiple rubidium (Rb) layers 23 and high-refractive-index layers 24 stacked together. The high-refractive-index layers 24 are any one of titanium trioxide (Ti3O5), titanium dioxide (TiO2), niobium pentoxide (Nb2O5), tantalum pentoxide (Ta2O5), or a mixed film material (H4). For example, the titanium trioxide (Ti3O5) layer has a refractive index greater than 1.6 and an extinction coefficient close to 0 in the wavelength range of 350 nm to 1100 nm. The rubidium (Rb) layer has a refractive index of 0.25 to 0.13 and an extinction coefficient of 0.24 to 5.58 in the wavelength range of 350 nm to 2000 nm. Its structural conditions are as follows: (The table below shows any of the following cases.)

[0059] Table 4. Structure of B-pixel filter film

[0060]

[0061]

[0062] like Figure 6 As shown, the B-pixel filter film has a passband formed in the wavelength range of 300nm to 1100nm, the center wavelength of the passband is in the range of 400nm to 500nm, the transmittance of the center wavelength of the passband is greater than 55% when the incident angle is 0°, and the transmittance of the remaining cutoff bands is less than 1%.

[0063] The IR pixel filter film is composed of multiple rubidium (Rb) layers 23 and high-refractive-index layers 24 stacked together. The high-refractive-index layers 24 are any one of titanium trioxide (Ti3O5), titanium dioxide (TiO2), niobium pentoxide (Nb2O5), tantalum pentoxide (Ta2O5), or a mixed film material (H4). For example, the titanium trioxide (Ti3O5) layer has a refractive index greater than 1.6 and an extinction coefficient close to 0 in the wavelength range of 350 nm to 1100 nm. The rubidium (Rb) layer has a refractive index of 0.25 to 0.13 and an extinction coefficient of 0.24 to 5.58 in the wavelength range of 350 nm to 2000 nm. Its structural conditions are as follows: (The table below shows any of the following cases.)

[0064] Table 5 IR pixel filter structure

[0065]

[0066]

[0067] like Figure 7 As shown, the IR pixel filter film has a passband formed in the wavelength range of 300nm to 1100nm, and the center wavelength of the passband only partially or partially overlaps in the infrared wavelength range of 800nm ​​to 1100nm to form a passband. The transmittance of the remaining cutoff band is less than 1%, and the transmittance of the center wavelength of the passband is greater than 30% when the incident angle is 0°.

[0068] Please refer to the following: Figure 8 The diagram illustrates a method for fabricating a filter structure comprising any combination of UV, R, G, B, and IR elements according to the present invention, comprising:

[0069] (a) Forming a photoresist shield on a substrate 10: A photoresist shield is formed on one side of a substrate 10, and a plurality of hollowed-out coating areas are provided on the photoresist shield at the location where a pixel filter film 22 is to be deposited, for example, the plurality of hollowed-out coating areas are formed in the block where an R pixel filter film is to be deposited.

[0070] (b) Vacuum coating: A complex pixel filter 22, for example an R pixel filter, is formed in the coating area by a vacuum coating method, consisting of a complex rubidium (Rb) layer 23 of different thicknesses and a complex high refractive index layer 24 of high refractive index stacked together.

[0071] (c) Coating photoresist: Coating photoresist on the photoresist shielding cutout coating area after the pixel filter film is coated, so as to seal the cutout coating area.

[0072] (d) Etching: Using etching, a plurality of other coating areas are formed on the photoresist shield at the location where another pixel filter film 22 is to be deposited, for example, the plurality of other coating areas are formed in the area where the G pixel filter film is to be deposited.

[0073] (e) Vacuum deposition: Using a vacuum deposition method, a plurality of other pixel filter films 22, such as G-pixel filter films, are formed on the plurality of other coating areas formed by etching. These filters consist of a plurality of rubidium (Rb) layers 23 of different thicknesses and a plurality of high refractive index layers 24 stacked on top of each other. Steps (c) to (e) can be repeated as needed to create a filter structure composed of three or more pixel filter films.

[0074] (f) Remove the photoresist shield: The process is complete once the photoresist shield is removed.

[0075] Please see Figure 9As shown, step (a) includes processes such as (a1) spin coating of photoresist; (a2) soft baking; (a3) ​​exposure; (a4) soft baking; (a5) development; (a6) soft baking and (a7) cleaning.

[0076] Please see Figure 10 As shown, the vacuum coating process in steps (b) and (e) is carried out in a vacuum sputtering reactive coating system 30. The system primarily uses oxides of rubidium (Rb) and high-refractive-index materials with a higher refractive index than rubidium (Rb), such as titanium pentoxide (Ti3O5), titanium dioxide (TiO2), niobium pentoxide (Nb2O5), tantalum pentoxide (Ta2O5), mixed film materials (H4), and their mixtures, as sputtering targets 35. The fabrication process is as follows: (A) A clean substrate 10 is placed on a roller 31 with the coating surface facing outwards. (B) Rotate the roller 31 at a constant speed in the coating chamber 32; (C) When the vacuum level is between 10⁻³ Pa and 10⁻⁵ Pa, turn on the corresponding sputtering source 33 and pass argon gas. Under the action of the electric field, the target material 35 is bombarded to form ions that attach to the substrate 10; (D) As the roller 31 rotates, the substrate 10 is carried to the reaction source region 34; (E) Oxygen or argon gas is introduced into the reaction source region 34 to form plasma. Under the action of the electric field, the plasma moves at high speed toward the substrate 10 and finally forms rubidium (Rb) or a high refractive index material on the substrate 10.

[0077] The substrate 10 is mounted on the roller 31 and rotates counterclockwise with the roller 31. The rotation speed is adjustable. The substrate 10, to be coated, first passes through the target 35, where a very thin rubidium (Rb) film or a high refractive index film is deposited. Then, it rotates to the reaction source, where it is ionized by oxygen ions and electrons to form an optical film with the desired properties. Controlling the number of seconds for each coating layer allows control over the thickness of each coating layer; the longer the coating time, the thicker the layer.

[0078] When preparing rubidium (Rb) films, introducing oxygen at a volume percentage of 10% to 90% of the total introduced oxygen and argon gases can produce films with a refractive index of 0.25 to 0.13 and an extinction coefficient of 0.24 to 5.58 in the wavelength range of 350 nm to 2000 nm. When using high-refractive-index materials, introducing oxygen at a volume percentage of 10% to 90% of the total introduced oxygen and argon gases can produce high-refractive-index films with a refractive index gradually changing from 1.3 to 2.5 in the range of 350 nm to 1100 nm and an extinction coefficient close to 0.

[0079] The UV, R, G, B, and IR filter structure and fabrication method provided by this invention, through vacuum deposition combined with photoresist shielding, achieves uniformity below ±5nm even when fabricating large substrates, meeting optical specifications. Furthermore, when applied to sensing chips of optical sensors such as Ambient Light Sensors (ALS), Proximity Sensors (PS), RGB color temperature sensors, and gesture sensors, it results in faster response times, significantly improved color resolution and adjustment sensitivity compared to similar products, and greatly enhanced brightness contrast. Moreover, the fabrication method of this invention allows for the formation of UV, R, G, B, and IR pixel filter films 22 with thicknesses within the nanometer range, thus enabling applications in nanometer-scale manufacturing technology products.

Claims

1. A filter structure for any combination of UV, R, G, B, and IR, characterized in that, It includes: A substrate, which is either a wafer semiconductor sensing element or a light-transmitting element; and A filter layer is formed on one side of the substrate and is composed of several basic units arranged in a matrix. Each basic unit contains several pixel filter films formed by vacuum deposition. The pixel filter film includes any combination of a UV pixel filter film, an R pixel filter film, a G pixel filter film, a B pixel filter film and an IR pixel filter film, so that the pixel filter film can only allow light of the corresponding wavelength to pass through. The UV pixel filter film is formed by stacking several rubidium layers and several high refractive index layers with a higher refractive index than the rubidium layers. By configuring the different thicknesses of each layer, a passband is formed in the wavelength range of 300nm to 1100nm. The center wavelength of this passband is between 300nm and 400nm, and the rest is cut off. The transmittance of the center wavelength of this passband is greater than 50% when the incident angle is 0°, and the transmittance of its cut-off band is less than 1% on average. This R-pixel filter film is formed by stacking several rubidium layers and several high-refractive-index layers with a higher refractive index than the rubidium layers. By configuring the different thicknesses of each layer, a passband is formed in the wavelength range of 300nm to 1100nm. The center wavelength of this passband is between 580nm and 740nm, while the rest is cut off. The transmittance of the center wavelength of this passband is greater than 55% when the incident angle is 0°, and the transmittance of its cutoff band is less than 1%. This G-pixel filter is formed by stacking several rubidium layers and several high-refractive-index layers with a higher refractive index than the rubidium layers. By configuring the different thicknesses of each layer, a passband is formed in the wavelength range of 300nm to 1100nm. The center wavelength of this passband is between 500nm and 565nm, while the rest is cut off. The transmittance of the center wavelength of this passband is greater than 55% when the incident angle is 0°, and the transmittance of its cutoff band is less than 1%. This B-pixel filter is formed by stacking several rubidium layers and several high-refractive-index layers with a higher refractive index than the rubidium layers. By configuring the different thicknesses of each layer, a passband is formed in the wavelength range of 300nm to 1100nm. The center wavelength of this passband is between 400nm and 500nm, and the rest is cut off. The transmittance of the center wavelength of this passband is greater than 55% when the incident angle is 0°, and the transmittance of its cutoff band is less than 1%. This IR pixel filter is formed by stacking several rubidium layers and several high refractive index layers with a higher refractive index than the rubidium layers, so that it has a passband in the wavelength range of 300nm to 1100nm. The center wavelength in the infrared wavelength range of 800nm ​​to 1100nm only partially overlaps to form a passband, and the transmittance of the remaining cutoff band is less than 1%. The transmittance of the center wavelength of the passband is greater than 30% when the incident angle is 0°.

2. The filter structure of any combination of UV, R, G, B, and IR as described in claim 1, characterized in that, The rubidium layer of the pixel filter film has a refractive index of 0.25 to 0.13 and an extinction coefficient of 0.24 to 5.58 in the wavelength range of 350 nm to 2000 nm. The high refractive index layer is any one of titanium pentoxide, titanium dioxide, niobium pentoxide, tantalum pentoxide or a mixture thereof, and the refractive index of the high refractive index layer is greater than 1.6 in the wavelength range of 350 nm to 1100 nm, and the extinction coefficient is close to 0.

3. The filter structure of any combination of UV, R, G, B, and IR as described in claim 2, characterized in that, The structural conditions of the UV pixel filter film are any of the conditions in the table below: 。 4. The filter structure of any combination of UV, R, G, B, and IR as described in claim 2, characterized in that, The structural conditions of the R-pixel filter film are any one of the conditions in the table below: 。 5. The filter structure of any combination of UV, R, G, B, and IR as described in claim 2, characterized in that, The structural conditions of the G-pixel filter film are any one of the conditions in the table below: 。 6. The filter structure of any combination of UV, R, G, B, and IR as described in claim 2, characterized in that, The structural conditions of the B-pixel filter film are any one of the conditions in the table below: 。 7. The filter structure of any combination of UV, R, G, B, and IR as described in claim 2, characterized in that, The structural conditions of the IR pixel filter film are any one of the conditions in the table below: 。 8. A method for fabricating a filter structure of any combination of UV, R, G, B, and IR as described in any one of claims 1-7, characterized in that, The method includes the following steps: (a) Forming a photoresist shield on a substrate: A photoresist shield is formed on one side of a substrate, and several perforated coating areas are provided on the photoresist shield where a pixel filter film is to be deposited. (b) Vacuum coating: A number of pixel filters are formed in the coating area by using a vacuum coating method, consisting of several layers of rubidium and several layers of high refractive index of different thicknesses stacked together; (c) Coating photoresist: Coating photoresist on the photoresist shielding cutout coating area after the pixel filter film is coated, so as to seal the cutout coating area. (d) Etching: Using etching, a plurality of other coating areas are formed on the photoresist shield at the location where another pixel filter film is to be deposited; (e) Vacuum coating again: Using a vacuum coating method, a plurality of pixel filters are formed on the plurality of other coating areas formed by etching, which are composed of a plurality of rubidium layers of different thicknesses and a plurality of high refractive index layers stacked on each other. (f) Remove the optical resist shielding: Removing the optical resist shielding completes the process; as well as By controlling the coating thickness of each layer in steps (b) and (e), the final filter structure can be a combination of any two pixel filter films from UV, R, G, B, or IR.

9. The method for fabricating a filter structure of any combination of UV, R, G, B, and IR as described in claim 8, characterized in that, After step (e), steps (c) to (e) are repeated as needed, and then step (f) is performed. By controlling the coating thickness of each layer in steps (b) and (e), the final filter structure is a combination of any three or more pixel filter films of UV, R, G, B or IR.

10. The method for fabricating a filter structure of any combination of UV, R, G, B, and IR as described in claim 8 or 9, characterized in that, Step (a) includes (a1) spin coating of photoresist; (a2) soft baking; (a3) ​​exposure; (a4) soft baking; (a5) development; (a6) soft baking and (a7) cleaning process.

11. The method for fabricating a filter structure of any combination of UV, R, G, B, and IR as described in claim 8 or 9, characterized in that, The vacuum coating process in steps (b) and (e) is carried out in a vacuum sputtering reactive coating system, using rubidium and a high refractive index material with a higher refractive index than rubidium as the sputtering target. The process is as follows: (A) A clean substrate is placed on a roller with the coating surface facing outwards; (B) The roller is rotated at a constant speed in a coating chamber; (C) When the vacuum level is between 10⁻³ Pa and 10⁻⁵ Pa, the corresponding target is turned on and argon gas is introduced. Under the action of an electric field, the target is bombarded to form ions that adhere to the substrate; (D) As the roller rotates, the substrate is carried to a reaction source region; (E) Oxygen or argon gas is introduced into the reaction source region to form plasma. Under the action of an electric field, the plasma moves at high speed toward the substrate and finally forms a rubidium film or a high refractive index film with a higher refractive index than rubidium on the substrate.

12. The method for fabricating a filter structure of any combination of UV, R, G, B, and IR as described in claim 11, characterized in that, The high refractive index material with a higher refractive index than rubidium is any one of titanium pentoxide, titanium dioxide, niobium pentoxide, tantalum pentoxide, or a mixture thereof.

13. The method for fabricating a filter structure of any combination of UV, R, G, B, and IR as described in claim 11, characterized in that, The number of seconds for each coating layer can control the thickness of each coating layer; the longer the time, the thicker the coating.

14. The method for fabricating a filter structure of any combination of UV, R, G, B, and IR as described in claim 11, characterized in that, When preparing the rubidium film, the volume percentage of oxygen introduced is 10% to 90% of the total volume of oxygen and argon introduced, in order to prepare a thin film with a refractive index of 0.25 to 0.13 and an extinction coefficient of 0.24 to 5.58 in the wavelength range of 350 nm to 2000 nm. When using a high refractive index material, the volume percentage of oxygen introduced is 10% to 90% of the total volume of oxygen and argon introduced, in order to prepare a high refractive index thin film with a refractive index that gradually changes from 1.3 to 2.5 in the wavelength range of 350 nm to 1100 nm and an extinction coefficient close to 0.

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