Reconfigurable coupler based on ridge gap waveguide

Abstract

The invention provides a reconfigurable coupler based on a ridge gap waveguide, comprising an inverted microstrip line, a ridge gap waveguide and a plurality of reconstruction components for adjusting the coupling degree of the coupler, wherein the inverted microstrip line feeds the ridge gap waveguide, the inverted microstrip line is in an upper layer, the ridge gap waveguide is in a lower layer, the ridge gap waveguide comprises an upper metal layer, a second dielectric layer and a lower metal layer arranged from top to bottom, the upper metal layer adopts a square shape with a gap at a diagonal line, the four sides of the upper metal layer are respectively provided with microstrip lines extending outward to the inverted microstrip line, a plurality of isolation grooves are respectively provided on both sides of the gap, the reconstruction components are arranged at the isolation grooves, and the reconstruction components are respectively connected to the upper metal layer and the lower metal layer; the invention can realize the rapid and simple adjustment of the coupling degree of the coupler, so that the coupler has a reconfigurable performance.

Description

Technical Field

[0001] The invention relates to a reconfigurable coupler based on a ridge gap waveguide, belonging to the technical field of communications. Background Art

[0002] With the gradual commercialization and deployment of the new generation of 5G communication systems, microwave and millimeter wave communication technologies are also developing rapidly. People's demand for high-quality wireless communications continues to drive the development of communication technology. The current low-frequency spectrum resources can no longer meet the growing amount of mobile communication transmission data. The new generation of wireless communication systems will inevitably develop towards high-frequency bands, including submillimeter wave and millimeter wave bands.

[0003] In high-frequency bands, traditional waveguide structures are no longer suitable for use, while gap waveguides are very suitable for use in the design of high-frequency RF devices due to their advantages such as low transmission loss, large power capacity, low difficulty in processing and assembly, and easy integration. As an indispensable basic component within a wireless communication system, the technological innovation of RF devices is of great significance to the improvement of communication system performance.

[0004] Previously, various coupler designs based on ridge gap waveguides have emerged and have shown excellent performance, but these designs are not reconfigurable, which greatly limits the development of ridge gap waveguide couplers. Therefore, it is of great significance to study reconfigurable couplers based on ridge gap waveguides.

[0005] The above problems are issues that should be considered and solved in the design and production process of reconfigurable couplers based on ridge gap waveguides. Summary of the invention

[0006] The purpose of the present invention is to provide a reconfigurable coupler based on a ridge gap waveguide to solve the problem that the existing ridge gap waveguide coupler in the prior art does not have reconfigurable performance and is difficult to achieve rapid adjustment of the coupling degree of the coupler.

[0007] The technical solution of the present invention is:

[0008] A reconfigurable coupler based on a ridge gap waveguide comprises an inverted microstrip line, a ridge gap waveguide and a plurality of reconstruction components for adjusting the coupling degree of the coupler, wherein the inverted microstrip line feeds the ridge gap waveguide, the inverted microstrip line is in the upper layer, and the ridge gap waveguide is in the lower layer, the ridge gap waveguide comprises an upper metal layer, a second dielectric layer and a lower metal layer arranged from top to bottom, the upper metal layer adopts a square shape with a gap at the diagonal line, the four sides of the upper metal layer are respectively provided with microstrip lines extending outward to the inverted microstrip line, a plurality of isolation grooves are respectively provided on both sides of the gap, the reconstruction components are arranged at the isolation grooves, and the reconstruction components are respectively connected to the upper metal layer and the lower metal layer.

[0009] Furthermore, the reconstruction component includes a capacitor, a metal through hole for reconstruction, a s-shaped groove and a PIN diode. The capacitor is provided in the isolation groove, and the lower metal layer is provided with a s-shaped groove and a PIN diode. The PIN diode is arranged in the middle of the s-shaped groove. The two ends of the PIN diode are respectively connected to the metal through hole for reconstruction. The metal through hole for reconstruction is respectively connected to the groove wall of the isolation groove on both sides of the gap through the capacitor.

[0010] Furthermore, the spherical groove includes a rectangular annular outer groove and a strip-shaped inner groove, the strip-shaped inner groove is arranged in the rectangular annular outer groove, and the two ends of the strip-shaped inner groove are respectively connected to the two sides of the rectangular annular outer groove, and the PIN diode is arranged in the strip-shaped inner groove.

[0011] Furthermore, the inverted microstrip line includes a top metal layer arranged from top to bottom, a first dielectric layer hollowed out in the middle, and four metal strips distributed on four sides of the first dielectric layer. The first dielectric layer adopts a square ring shape larger than the ridge gap waveguide, and the middle of the first dielectric layer is an air cavity.

[0012] Furthermore, the second dielectric layer is provided with a periodically arranged mushroom-shaped electromagnetic gap structure, namely a mushroom-shaped EBG structure. The mushroom-shaped EBG structure includes a metal through hole 1 and a circular metal sheet. A circular metal sheet is provided at the end of the metal through hole 1. The metal through hole 1 and the circular metal sheet are arranged and combined periodically. The two ends of the mushroom-shaped EBG structure are respectively connected to the air cavity and the lower metal layer.

[0013] Furthermore, the upper metal layer and the metal strip are arranged at the same level, and the upper metal layer is located at the center of the inverted microstrip line.

[0014] Furthermore, the second dielectric layer is provided with a plurality of metal through holes 2, one end of the metal through hole 2 is connected to the lower metal layer, and the other end of the metal through hole 2 is connected to the microstrip line and / or the upper metal layer.

[0015] Furthermore, two ends of the diagonal of the upper metal layer are provided with adjustment metal through holes, two ends of the adjustment metal through holes are respectively connected to the upper metal layer and the lower metal layer, and the adjustment metal through holes and the gaps are respectively provided at different diagonals of the upper metal layer.

[0016] Furthermore, the reconfigurable coupler based on the ridge gap waveguide can adjust the coupling degree before manufacturing by setting the size of the adjustment metal through hole and / or the size of the upper metal layer and the distance of the gap.

[0017] Furthermore, the reconstruction process of the reconfigurable coupler based on the ridge gap waveguide is that the reconstruction metal through holes of the reconstruction component respectively connect the upper metal layer and the lower metal layer of the ridge gap waveguide, thereby converting the coupling adjustment parameter of the gap distance of the upper metal layer to the lower metal layer, and then controlling the on and off of the PIN diode loaded on the lower metal layer, thereby realizing the adjustment of the coupling degree of the coupler after processing and manufacturing.

[0018] The beneficial effects of the present invention are as follows: the reconfigurable coupler based on the ridge gap waveguide can quickly and easily adjust the coupling degree of the coupler by adjusting the on-off state of the PIN diode loaded on the lower metal layer of the ridge gap waveguide, so that the coupler has reconfigurable performance without changing the size of the coupler, and can realize the reconfigurable function while meeting the requirements of easy integration and simple processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 is a schematic diagram of the split structure of a reconfigurable coupler based on a ridge gap waveguide according to an embodiment of the present invention;

[0020] Figure 2 is a schematic side view of the structure of a reconfigurable coupler based on a ridge gap waveguide according to an embodiment;

[0021] Figure 3 is a schematic diagram of the structure of a ridge gap waveguide and a reconstruction component in an embodiment;

[0022] Figure 4 is a schematic diagram of the structure of the reconstruction component in the embodiment;

[0023] Figure 5 is a schematic structural diagram of a first dielectric layer, a metal strip and an air cavity of an inverted microstrip line in an embodiment;

[0024] Figure 6 is a schematic diagram of simulated S parameters of a reconfigurable coupler based on a ridge gap waveguide in an embodiment when four PIN diodes are all turned off;

[0025] Figure 7 is a schematic diagram of simulated S parameters of a reconfigurable coupler based on a ridge gap waveguide in an embodiment when two middle PIN diodes are turned on and two side PIN diodes are turned off;

[0026] Figure 8 is a schematic diagram of simulated S parameters of a reconfigurable coupler based on a ridge gap waveguide in an embodiment when two middle PIN diodes are turned off and two side PIN diodes are turned on;

[0027] Fig. 9 is a schematic diagram of simulated S parameters of a reconfigurable coupler based on a ridge gap waveguide in an embodiment when four PIN diodes are all turned on;

[0028] Among them: 1-inverted microstrip line, 2-ridge gap waveguide, 3-reconstruction component, 4-metal through hole for adjustment;

[0029] 11-top metal layer, 12-first dielectric layer, 13-metal strip, 14-air cavity;

[0030] 21-upper metal layer, 22-second dielectric layer, 23-lower metal layer, 24-gap, 25-microstrip line, 26-isolation slot, 27-metal through hole 1, 28-circular metal sheet, 29-metal through hole 2;

[0031] 31-capacitor, 32-metal through hole for reconstruction, 33-Japanese-shaped groove, 34-PIN diode;

[0032] 331- rectangular annular outer groove, 332- strip-shaped inner groove. DETAILED DESCRIPTION

[0033] The preferred embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0034] Example

[0035] A reconfigurable coupler based on ridge gap waveguide, such as Figure 1 and Figure 2 , including an inverted microstrip line 1, a ridge gap waveguide 2 and a plurality of reconstruction components 3 for adjusting the coupling degree of the coupler, the inverted microstrip line 1 feeds the ridge gap waveguide 2, the inverted microstrip line 1 is in the upper layer, the ridge gap waveguide 2 is in the lower layer, the ridge gap waveguide 2 includes an upper metal layer 21, a second dielectric layer 22 and a lower metal layer 23 arranged from top to bottom, the upper metal layer 21 is a square with a gap 24 at the diagonal line, the four sides of the upper metal layer 21 are respectively provided with microstrip lines 25 extending outward to the inverted microstrip line 1, a plurality of isolation grooves 26 are respectively provided on both sides of the gap 24, the reconstruction component 3 is arranged at the isolation groove 26, and the reconstruction component 3 is respectively connected to the upper metal layer 21 and the lower metal layer 23.

[0036] This reconfigurable coupler based on the ridge gap waveguide can quickly and easily adjust the coupling degree of the coupler by adjusting the on-off state of the PIN diode 34 loaded on the lower metal layer 23 of the ridge gap waveguide 2, so that the coupler has reconfigurable performance without changing the size of the coupler, and can achieve reconfigurable functions while meeting the requirements of easy integration and simple processing.

[0037] like Figure 3 and Figure 4The reconstruction component 3 includes a capacitor 31, a reconstruction metal through hole 32, a s-shaped groove 33 and a PIN diode 34. The capacitor 31 is provided in the isolation groove 26, and the lower metal layer 23 is provided with a s-shaped groove 33 and a PIN diode 34. The PIN diode 34 is arranged in the middle of the s-shaped groove 33. The two ends of the PIN diode 34 are respectively connected to the reconstruction metal through hole 32. The reconstruction metal through hole 32 is respectively connected to the groove wall of the isolation groove 26 on both sides of the gap 24 through the capacitor 31. A capacitor 31 is connected inside the isolation groove 26 to isolate direct current; metal through holes 27 are evenly arranged on the second dielectric layer 22 to introduce a slow wave effect so that the electric field is concentrated in the air cavity 14 of the first dielectric layer 12; a plurality of metal through holes 32 for reconstruction are provided on both sides of the gap 24 of the upper metal layer 21 to connect the PIN diode 34 loaded on the lower metal layer 23, and the coupling adjustment parameter of the upper metal layer 21: the distance of the gap 24 of the upper metal layer 21 is converted to the lower metal layer 23; and then the PIN diode 34 is loaded on the lower metal layer 23, and the coupling degree of the coupler is adjustable by controlling the on and off of the PIN diode 34, thereby realizing the reconfigurable function of the coupler based on the ridge gap waveguide 2.

[0038] The spherical groove 33 includes a rectangular annular outer groove 331 and a strip-shaped inner groove 332. The strip-shaped inner groove 332 is disposed in the rectangular annular outer groove 331, and the two ends of the strip-shaped inner groove 332 are respectively connected to the two sides of the rectangular annular outer groove 331. The PIN diode 34 is disposed at the strip-shaped inner groove 332. The lower metal layer 23 is provided with a plurality of spherical grooves 33, and the outer ring of the spherical groove 33 realizes the isolation function.

[0039] like Figure 1 and Figure 5The inverted microstrip line 1 includes a top metal layer 11 arranged from top to bottom, a first dielectric layer 12 hollowed out in the middle, and four metal strips 13 distributed on the four sides of the first dielectric layer 12. The first dielectric layer 12 adopts a square ring shape larger than the ridge gap waveguide 2. The middle part of the first dielectric layer 12 is an air cavity 14. The second dielectric layer 22 is provided with a plurality of metal through holes 27. The second dielectric layer 22 is provided with a periodically arranged electromagnetic gap structure, namely a mushroom-shaped EBG structure. The mushroom-shaped EBG structure includes a metal through hole 27 and a circular metal sheet 28. The end of the metal through hole 27 is provided with a circular metal sheet 28. The metal through hole 27 and the circular metal sheet 28 are arranged and combined periodically. The two ends of the mushroom-shaped EBG structure are respectively connected to the air cavity 14 and the lower metal layer 23. The metal through hole 27 concentrates most of the energy in the air medium of the air cavity 14 of the first dielectric layer 12. The second dielectric layer 22 is provided with a plurality of metal through holes 29, one end of the metal through hole 29 is connected to the lower metal layer 23, and the other end of the metal through hole 29 is connected to the microstrip line 25 and / or the upper metal layer 21, so as to push the dielectric electromagnetic wave of the lower metal layer 23 to the upper air cavity 14. The upper metal layer 21 and the metal strip 13 are provided at the same level, and the upper metal layer 21 is located at the center of the inverted microstrip line 1.

[0040] This reconfigurable coupler based on ridge gap waveguide has a square main structure. The first dielectric layer 12 of the inverted microstrip line 1 is hollow in the middle, and an air cavity 14 is formed in the middle, so that air is used as the transmission medium, which greatly reduces the dielectric loss. The lower metal layer of the inverted microstrip line 1 is a feeding metal strip 13, which has four ports distributed on the four sides of the square and extending to the middle coupling feeding structure.

[0041] like Figure 3 and Figure 4 The two ends of the diagonal of the upper metal layer 21 are respectively provided with adjustment metal through holes 4, and the two ends of the adjustment metal through holes 4 are respectively connected to the upper metal layer 21 and the lower metal layer 23, and the adjustment metal through holes 4 and the gaps 24 are respectively provided at different diagonals of the upper metal layer 21. By setting the size of the adjustment metal through holes 4 and / or the size of the upper metal layer 21 and the distance of the gaps 24, the coupling degree can be adjusted, which is used to adjust the coupling degree before processing and manufacturing, and the coupling degree is determined and cannot be modified after processing and manufacturing.

[0042] This reconfigurable coupler based on ridge gap waveguide can adjust the coupling degree of the coupler after processing and manufacturing by controlling the on-off of the PIN diode 34, without changing the size of the coupler. The reconstruction process of the reconfigurable coupler based on ridge gap waveguide is that the reconstruction metal through hole 32 of the reconstruction component 3 is respectively connected to the upper metal layer 21 and the lower metal layer 23 of the ridge gap waveguide 2, so that the distance of the gap 24 of the upper metal layer 21, which is a coupling degree adjustment parameter, is converted to the lower metal layer 23, and then the on-off of the PIN diode 34 loaded on the lower metal layer 23 is controlled to adjust the coupling degree of the coupler.

[0043] In this reconfigurable coupler based on ridge gap waveguide, the side length of the square upper metal layer 21 of the ridge gap waveguide 2 and the distance of the diagonal gap 24 are determined according to the design index. The size of the adjustment metal through hole 4 of the ridge gap waveguide 2 is determined according to the design index. The position and number of the PIN diode 34 in the reconstruction component 3 are determined according to the design index. The position and number of the reconstruction metal through holes 32 on both sides of the gap 24 of the ridge gap waveguide 2 are determined according to the design index. The position and size of the periodically arranged metal through holes 27 of the ridge gap waveguide 2 are determined according to the design index.

[0044] The principle of the reconfigurable coupler based on ridge gap waveguide is as follows: In view of the problem that the upper metal of the existing ridge gap waveguide 2 realizes the basic function of the microstrip line coupler, but cannot realize the adjustable coupling function, the reconfigurable coupler based on ridge gap waveguide, two adjustment metal through holes 4 are punched from the diagonal end of the upper metal layer 21 to the lower metal layer, and the coupling degree can be adjusted by adjusting the size of the metal through holes 4; the coupling degree can also be adjusted by adjusting the size of the upper metal layer 21, but this method can only be used to determine one coupling degree, which cannot be modified after processing and manufacturing. The reconfigurable coupler based on ridge gap waveguide of the embodiment, by punching a number of reconstruction metal through holes 32 from the upper metal layer 21 of the ridge gap waveguide 2 to the lower metal layer 23, is equivalent to converting the coupling degree adjustment parameter of the upper metal layer 21: the distance of the gap 24 of the upper metal layer 21, to the lower metal layer 23; and then the PIN diode 34 is loaded on the lower metal layer 23, and the coupling degree of the coupler can be adjusted after processing and manufacturing by controlling the on and off of the PIN diode 34. The on-off of the PIN diode can be controlled by an external bias voltage. Although there is a risk of energy leakage due to the four eight-shaped isolation grooves 26 opened in the lower metal layer 23, the periodically arranged metal through holes in the mushroom-shaped electromagnetic gap structure of the ridge gap waveguide 2, i.e., the mushroom-shaped EBG structure, concentrate most of the energy in the air medium of the air cavity 14 of the first dielectric layer 12, so the leaked energy can be ignored. Figure 6-Figure 9 The simulation experiment also proves this statement.

[0045] This reconfigurable coupler based on ridge gap waveguide has four parameters for adjusting coupling degree through structural design: the size of the upper metal layer 21 of the ridge gap waveguide 2, the distance of the gap 24, and the on-off state of the PIN diode 34 of the reconfiguration component 3 by adjusting the size of the metal through hole 4. Among them, the first three parameters are used to adjust the coupler to have better coupling and isolation during the simulation experiment. A coupling degree can be determined before processing and manufacturing, and cannot be modified after processing and manufacturing; the last parameter, i.e., the on-off state of the PIN diode 34 of the reconfiguration component 3, can make the coupler reconfigurable, and is used to adjust the coupling degree of the coupler after processing and manufacturing without changing the size of the coupler.

[0046] This reconfigurable coupler based on the ridge gap waveguide can adjust the coupling degree of the coupler quickly and simply by switching the switch state of the PIN diode 34 of the reconstruction component 3 without changing the size of the coupler, and can meet the requirements of easy integration and simple processing while realizing the reconfigurable function. The embodiment can make the coupler based on the ridge gap waveguide 2 reconfigurable under the indicators of coupling degree and isolation, opening up a new height of the design of the coupler based on the ridge gap waveguide 2.

[0047] The reconfigurable coupler based on ridge gap waveguide of the embodiment is verified by experimental simulation as follows:

[0048] In the reconfigurable coupler based on ridge gap waveguide of the embodiment, the first dielectric layer 12 is made of Rogers 5880 material and has a thickness of 0.5 mm. The annular interior of the first dielectric layer 12 is air to form an air cavity 14. The second dielectric layer 22 is made of Rogers 3003 material and has a thickness of 0.8 mm. The side length of the upper metal layer 21 is 5.8 mm, the distance of the gap 24 at the diagonal is 0.9 mm, and the upper metal layer 21 is arranged parallel to the inner side length of the first dielectric layer 12. The second dielectric layer 22 is provided with a metal through hole 27, which is arranged periodically, with a radius of 0.2 mm and a spacing of 1.7 mm. The radius of the reconstruction metal through holes 32 on both sides of the gap 24 is 0.1 mm and the spacing is 2 mm. The number of the reconstruction metal through holes 32 and the isolation groove 26 is 8. The number of PIN diodes 34 is four.

[0049] The simulation results of the reconfigurable coupler based on ridge gap waveguide in the embodiment are as follows: Figures 6 to 9 As shown, there are four states:

[0050] Figure 6 FIG. 1 is a schematic diagram of simulated S parameters of a reconfigurable coupler based on a ridge gap waveguide in an embodiment when all four PIN diodes 34 are turned off. Figure 6, the embodiment can achieve 5dB coupling in a bandwidth of 26.8GHz to 33GHz, and the phase difference is 270°±5°.

[0051] Figure 7 FIG. 1 is a schematic diagram of simulated S parameters of a reconfigurable coupler based on a ridge gap waveguide in an embodiment when the two middle PIN diodes 34 are turned on and the two side PIN diodes 34 are turned off. Figure 7 , the embodiment can achieve 8dB coupling in a bandwidth of 25GHz to 31GHz, and the phase difference is 270°±5°.

[0052] Figure 8 FIG. 1 is a schematic diagram of simulated S parameters of a reconfigurable coupler based on a ridge gap waveguide in an embodiment when the two middle PIN diodes 34 are turned off and the two side PIN diodes 34 are turned on. Figure 8 , the embodiment can achieve 7dB coupling in a bandwidth of 26.8GHz to 32GHz, and the phase difference is 270°±5°.

[0053] Fig. 9 FIG. 1 is a schematic diagram of simulated S parameters of a reconfigurable coupler based on a ridge gap waveguide in an embodiment when all four PIN diodes 34 are turned on. Fig. 9 , the embodiment can achieve 12dB coupling in a bandwidth of 26.1GHz to 32.5GHz, and the phase difference is 270°±5°.

[0054] In summary, the reconfigurable coupler based on the ridge gap waveguide of the embodiment can realize the function of adjustable coupling degree within the bandwidth of 26.8 GHz to 31 GHz.

[0055] The above embodiments are only for illustrating the technical idea of ​​the present invention, and cannot be used to limit the protection scope of the present invention. Any changes made to the technical solution according to the technical idea proposed by the present invention shall fall within the protection scope of the present invention.

Claims

1. A reconfigurable coupler based on a ridge gap waveguide, comprising an inverted microstrip line, a ridge gap waveguide and a plurality of reconfiguration components for adjusting the coupling degree of the coupler, wherein the inverted microstrip line feeds the ridge gap waveguide, the inverted microstrip line is in the upper layer, the ridge gap waveguide is in the lower layer, the ridge gap waveguide comprises an upper metal layer, a second dielectric layer and a lower metal layer arranged from top to bottom, the upper metal layer is a square with a gap at the diagonal line, the four sides of the upper metal layer are respectively provided with microstrip lines extending outward to the inverted microstrip line, a plurality of isolation grooves are respectively provided on both sides of the gap, the reconfiguration components are arranged at the isolation grooves, and the reconfiguration components are respectively connected to the upper metal layer. layer and a lower metal layer; the reconstruction component includes a capacitor, a metal through hole for reconstruction, a s-shaped groove and a PIN diode, the capacitor is arranged in the isolation groove, the lower metal layer is provided with a s-shaped groove and a PIN diode, the PIN diode is arranged in the middle of the s-shaped groove, the two ends of the PIN diode are respectively connected to the metal through hole for reconstruction, and the metal through hole for reconstruction is respectively connected to the groove walls of the isolation groove on both sides of the gap through the capacitor; the s-shaped groove includes a rectangular annular outer groove and a strip-shaped inner groove, the strip-shaped inner groove is arranged in the rectangular annular outer groove, and the two ends of the strip-shaped inner groove are respectively connected to the two sides of the rectangular annular outer groove, and the PIN diode is arranged at the strip-shaped inner groove.

2. The reconfigurable coupler based on ridge gap waveguide according to claim 1, characterized in that: The inverted microstrip line includes a top metal layer arranged from top to bottom, a first dielectric layer hollowed out in the middle and four metal strips distributed on the four sides of the first dielectric layer. The first dielectric layer adopts a square ring shape larger than the ridge gap waveguide, and the middle of the first dielectric layer is an air cavity.

3. The reconfigurable coupler based on ridge gap waveguide according to claim 2, characterized in that: The second dielectric layer is provided with a periodically arranged mushroom-shaped electromagnetic gap structure, namely a mushroom-shaped EBG structure. The mushroom-shaped EBG structure includes a metal through hole 1 and a circular metal sheet. A circular metal sheet is provided at the end of the metal through hole 1. The metal through hole 1 and the circular metal sheet are arranged and combined periodically. The two ends of the mushroom-shaped EBG structure are respectively connected to the air cavity and the lower metal layer.

4. The reconfigurable coupler based on ridge gap waveguide according to claim 2, characterized in that: The upper metal layer and the metal strip are arranged at the same level, and the upper metal layer is located at the center of the inverted microstrip line.

5. The reconfigurable coupler based on ridge gap waveguide according to claim 4, characterized in that: The second dielectric layer is provided with a plurality of metal through holes 2, one end of the metal through hole 2 is connected to the lower metal layer, and the other end of the metal through hole 2 is connected to the microstrip line and / or the upper metal layer.

6. The reconfigurable coupler based on ridge gap waveguide according to any one of claims 1 to 5, characterized in that: The two ends of the diagonal of the upper metal layer are respectively provided with adjustment metal through holes, the two ends of the adjustment metal through holes are respectively connected to the upper metal layer and the lower metal layer, and the adjustment metal through holes and the gaps are respectively provided at different diagonals of the upper metal layer.

7. The reconfigurable coupler based on ridge gap waveguide according to claim 6, characterized in that: The reconfigurable coupler based on the ridge gap waveguide realizes the adjustment of the coupling degree before processing and manufacturing by setting the size of the adjustment metal through hole and / or the size of the upper metal layer and the distance of the gap.

8. The reconfigurable coupler based on ridge gap waveguide according to any one of claims 1 to 4, characterized in that: The reconstruction process of the reconfigurable coupler based on the ridge gap waveguide is that the reconstruction metal through holes of the reconstruction component are respectively connected to the upper metal layer and the lower metal layer of the ridge gap waveguide, so that the coupling adjustment parameter of the gap distance of the upper metal layer is transferred to the lower metal layer, and then the on-off of the PIN diode loaded on the lower metal layer is controlled, so as to realize the adjustment of the coupling degree of the coupler after processing and manufacturing.

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