Deposition system and method

Abstract

A deposition system and a deposition method are provided. The deposition method includes placing a substrate above a platform in a chamber of a deposition system. A precursor material is introduced into the chamber. A first gas curtain is generated in front of a first electromagnetic (EM) radiation source coupled to the chamber. A plasma is generated from the precursor material in the chamber, where the plasma includes dissociated components of the precursor material. The plasma is subjected to first EM radiation from the first EM radiation source. The first EM radiation further dissociates the precursor material. A layer is deposited above the substrate. The layer includes reaction products of the dissociated components of the precursor material.

Description

Technical Field

[0001] Embodiments of the present invention relate to deposition systems and methods. Background Technology

[0002] Semiconductor devices are used in a variety of electronic applications, such as personal computers, mobile phones, digital cameras, and other electronic devices. Semiconductor devices are typically manufactured by sequentially depositing insulating or dielectric layers, conductive layers, and semiconductor layers of material on a semiconductor substrate, and then using photolithography to pattern the individual material layers to form circuit components and elements thereon.

[0003] The semiconductor industry is continuously increasing the integration density of various electronic components (such as transistors, diodes, resistors, capacitors, etc.) by constantly reducing the size of the smallest component, thereby allowing more components to be integrated into a given area. However, as the size of the smallest component decreases, other problems arise that need to be addressed. Summary of the Invention

[0004] According to one aspect of an embodiment of the present invention, a deposition method is provided, comprising: placing a substrate above a platform in a chamber of a deposition system; introducing a precursor material into the chamber; generating a first gas curtain in front of a first electromagnetic (EM) radiation source coupled to the chamber; generating a plasma from the precursor material in the chamber, wherein the plasma includes dissociated components of the precursor material; subjecting the plasma to first EM radiation from the first EM radiation source, wherein the first EM radiation further dissociates the precursor material; and depositing a layer above the substrate, the layer comprising reaction products of the dissociated components of the precursor material.

[0005] According to another aspect of an embodiment of the present invention, a deposition method is provided, comprising: placing a substrate on a platform in a chamber of a deposition system; allowing a precursor material to flow into the chamber; generating a first gas curtain in front of a first electromagnetic (EM) radiation source coupled to the chamber; generating a plasma from the precursor material in the chamber, wherein the plasma includes dissociated components of the precursor material; depositing a layer over the substrate, the layer comprising reaction products of the dissociated components of the precursor material, the layer comprising aggregate defects at an edge of the substrate; and removing the aggregate defects from the layer using first EM radiation from the first EM radiation source.

[0006] According to another aspect of the present invention, a deposition system is provided, comprising: a chamber having a first window on a side of the chamber; a platform located in the chamber, the platform including a first electrode; a nozzle located above the platform in the chamber, the nozzle including a second electrode; a plasma power source coupled to the second electrode; and a first electromagnetic (EM) radiation source attached to the side of the chamber, the first EM radiation generated by the first EM source entering the chamber through the first window and propagating between the platform and the nozzle. Attached Figure Description

[0007] The various aspects of the invention can be best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be emphasized that, in accordance with standard industrial practice, the various components are not drawn to scale and are for illustrative purposes only. In fact, for clarity of discussion, the dimensions of the various components may be arbitrarily increased or decreased.

[0008] Figure 1A and Figure 1B A cross-sectional view of a deposition system according to some embodiments is shown.

[0009] Figure 2 A cross-sectional view of a substrate according to some embodiments is shown.

[0010] Figure 3 This is a flowchart illustrating a deposition method according to some embodiments.

[0011] Figure 4 This is a flowchart illustrating a deposition method according to some embodiments.

[0012] Figure 5 This is a cross-sectional view of a deposition system according to some embodiments.

[0013] Figures 6A-6C This shows a three-dimensional view and a cross-sectional view of a deposition system according to some embodiments.

[0014] Figure 7 This is a flowchart illustrating a deposition method according to some embodiments.

[0015] Figure 8 This is a flowchart illustrating a deposition method according to some embodiments.

[0016] Figure 9 This is a cross-sectional view of a deposition system according to some embodiments.

[0017] Figure 10 This is a flowchart illustrating a deposition method according to some embodiments.

[0018] Figure 11 This is a flowchart illustrating a deposition method according to some embodiments.

[0019] Figure 12 This is a cross-sectional view of a deposition system according to some embodiments. Detailed Implementation

[0020] The following disclosure provides numerous embodiments or examples of different features for implementing the invention. Specific embodiments or examples of components and arrangements are described below to simplify the invention. Of course, these are merely examples and not intended to be limiting. For example, in the following description, forming a first component above or on a second component can include embodiments where the first and second components are in direct contact, and can also include embodiments where an additional component can be formed between the first and second components, such that the first and second components are not in direct contact. Furthermore, reference numerals and / or letters may be repeated in various examples. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0021] Furthermore, for ease of description, this document may use spacing terms such as “below,” “under,” “lower,” “above,” “upper,” etc., to describe the relationship between one element or component and another, as shown in the figures. In addition to the orientations shown in the figures, spacing terms are intended to include different orientations of the device during use or operation. The device may be positioned in other ways (rotated 90 degrees or in other orientations), and the spacing descriptors used herein may be interpreted accordingly.

[0022] Embodiments will be described with reference to a specific context, namely, deposition apparatus and methods. In some embodiments, the deposition apparatus includes one or more electromagnetic (EM) radiation sources, such as ultraviolet (UV) sources or laser sources, for dissociating, heating, and / or exciting precursor materials within the deposition apparatus chamber. In some embodiments, the one or more EM radiation sources are used to burn off cluster defects in the deposited layer formed above the substrate and reduce the defect level within the deposited layer. The various embodiments discussed herein allow for the deposition of void-free and seamless layers with reduced impurity and defect levels and provide additional parameters (e.g., such as EM radiation intensity and / or wavelength) for adjusting the deposition process (e.g., adjusting the composition of the deposited layer).

[0023] Figure 1A and Figure 1B A deposition system 100 according to some embodiments is shown. Figure 1A A cross-sectional view according to some embodiments is illustrated. Figure 1B A deposition system 100 according to some embodiments is shown (see Figure 1A A detailed view of region 129. The deposition system 100 can be used to deposit a deposition layer 201 over a substrate 200, which can be, for example, a semiconductor structure, wafer, device, package, or other structure.

[0024] As described in more detail below, the deposition system 100 can perform a deposition process in which thermal energy, plasma energy, and / or EM radiation energy (e.g., UV energy or laser energy) provide deposition energy during the deposition process. In some embodiments, when the deposition process uses thermal energy as the deposition energy, the deposition process performs a thermal deposition process, such as atomic layer deposition (ALD), chemical vapor deposition (CVD), etc. In some embodiments, when the deposition process uses plasma energy as the deposition energy, the deposition process performs a plasma-assisted deposition process, such as plasma-enhanced ALD (PEALD), plasma-enhanced CVD (PECVD), etc. In some embodiments, when the deposition process uses plasma energy and EM radiation energy (e.g., UV or laser energy) as the deposition energy, the deposition process performs a plasma and laser-assisted deposition (PLAD) process, such as plasma and laser-enhanced ALD, plasma and laser-enhanced CVD, etc.

[0025] The deposition system 100 includes a chamber 101 and an inlet 103, the inlet 103 being configured to receive and deliver a desired precursor material into the chamber 101 and a nozzle 105. The nozzle 105 is used to disperse selected precursor material into the chamber 101 and can be designed to uniformly disperse the precursor material to minimize undesirable process conditions that may be caused by uneven dispersion. In one embodiment, the nozzle 105 may have an annular design, with openings uniformly distributed around the nozzle 105 to allow the desired precursor material to be dispersed into the chamber 101.

[0026] However, as those skilled in the art will recognize, the introduction of precursor material into chamber 101 via a single nozzle 105 or via a single inlet point as described above is intended to be illustrative and not to limit the embodiments. Any number of individual and separate nozzles and / or other openings may be used to introduce precursor material into chamber 101. All such combinations of nozzles and other inlet points are fully intended to be included within the scope of the embodiments.

[0027] Chamber 101 can receive the desired precursor material and expose the substrate 200 to the precursor material, and chamber 101 can be any desired shape suitable for distributing the precursor material and bringing the precursor material into contact with the substrate 200. Figure 1A In the illustrated embodiment, chamber 101 has cylindrical sidewalls and a bottom. However, chamber 101 is not limited to a cylindrical shape and may use any other suitable shape, such as a hollow square tube, an octagon, etc. Furthermore, chamber 101 may be made of a material inert to various process materials. Therefore, while chamber 101 may be made of any suitable material capable of withstanding the chemicals and pressures involved in the deposition process, in some embodiments, chamber 101 may be made of steel, stainless steel, nickel, aluminum, alloys of these, combinations thereof, etc.

[0028] Within chamber 101, substrate 200 can be placed on mounting platform 107 for positioning and control during the deposition process. Mounting platform 107 may include heating mechanism 109 for heating substrate 200 during the deposition process. Heating mechanism 109 may be a resistance heating element, etc. Mounting platform 107 may also be referred to as a base or chuck. In the illustrated embodiment, mounting platform 107 has the same diameter as nozzle 105.

[0029] In some embodiments, the precursor material can be ignited into plasma 135 to assist the deposition process. Plasma 135 includes dissociated components of the precursor material (such as charged and / or neutral components). In such embodiments, the mounting platform 107 may additionally include a first electrode 111. The first electrode 111 can be grounded or biased by a desired voltage source (not shown). By being electrically biased, the first electrode 111 is used to provide bias to the incoming precursor material and assist in igniting the precursor material into plasma. Furthermore, the first electrode 111 is also used to maintain the precursor plasma by maintaining the bias during the deposition process.

[0030] In some embodiments, the nozzle 105 may also be, or include (or otherwise incorporate) a second electrode 113 coupled to a power source 115. The power source 115 is used to provide power to the second electrode 113 to ignite the plasma 135 during the introduction of the precursor material. The power source 115 may be a low-frequency (LF) power source (operating at frequencies between about 100 kHz and about 400 kHz), a radio-frequency (RF) power source (operating at frequencies between about 13.56 MHz, about 27.12 MHz, about 60 MHz, or about 80 MHz), a microwave (MW) power source (operating at frequencies between about 2.45 GHz), etc. In some embodiments, the power source 115 may provide power between about 10 W and 3000 W.

[0031] However, although the deposition system 100 described above is an in-situ capacitively coupled plasma (CCP) system, the embodiments are not intended to be limited to in-situ CCP systems. Rather, any suitable in-situ or remote plasma system can be used, such as inductively coupled plasma systems, magnetically enhanced reactive ion etching, electron cyclotron resonance systems, etc. All such systems are fully intended to be included within the scope of the embodiments.

[0032] In addition, although Figure 1AA single mounting platform 107 is shown, but any number of mounting platforms may additionally be included within chamber 101. Furthermore, chamber 101 and mounting platform 107 may be part of an aggregation tooling system (not shown). The aggregation tooling system can be used in conjunction with an automated processing system to position and place substrate 200 into chamber 101 prior to the deposition process, to position and hold substrate 200 during the deposition process, and to remove substrate 200 from chamber 101 after the deposition process.

[0033] Chamber 101 may also have an exhaust outlet 117 for discharging gas out of chamber 101. A vacuum pump (not shown) may be connected to the exhaust outlet 117 of chamber 101 to assist in discharging the gas. The vacuum pump may also be used to reduce and control the pressure within chamber 101 to a desired pressure, and may also be used in preparation for evacuating precursor material from chamber 101.

[0034] In some embodiments, the deposition system 100 includes one or more electromagnetic (EM) radiation sources 119 coupled to the chamber 101. The EM radiation source 119 may be an ultraviolet (UV) system or a laser system, such as an F2 system (operating at a wavelength of 157 nm), an ArF system (operating at a wavelength of 193 nm), an Nd:YAG system (operating at wavelengths of 213 nm, 266 nm, 355 nm, or 532 nm), a He-Ag system (operating at a wavelength of 224.3 nm), a KCl system (operating at a wavelength of 222 nm), a KrF system (operating at a wavelength of 248 nm), a XeCl system (operating at a wavelength of 308 nm), a He-Cd system (operating at a wavelength of 325 nm), an N2 system (operating at a wavelength of 337.1 nm), an XeF system (operating at a wavelength of 351 nm), a He-Cd system (operating at a wavelength of 441.6 nm), etc. In some embodiments, the EM radiation 121 generated by the EM radiation source 119 (by...) Figure 1A (Indicated by the arrow in the diagram) propagates between the nozzle 105 and the mounting platform 107 within chamber 101. EM radiation 121 further dissociates, heats, or excites the precursor material. In some embodiments, the EM radiation source 119 is selected based on the precursor material, such that the EM radiation 121 from the EM radiation source 119 can dissociate, heat, or excite the precursor material. In the illustrated embodiment, the deposition system 100 includes two EM radiation sources 119. In other embodiments, the deposition system 100 may include one or more than two EM radiation sources 119. In some embodiments, the energy of the EM radiation source 119 may be in the range of about 1 eV to about 20 eV.

[0035] In some embodiments, EM radiation 121 from each of the EM radiation sources 119 enters chamber 101 through a corresponding window 123 in chamber 101. The material of the window 123 is selected to provide good vacuum isolation to chamber 101 and to be transparent to the EM radiation 121. In some embodiments, the window 123 is made of quartz, glass, a combination thereof, etc.

[0036] In some embodiments, chamber 101 includes an inlet 125 adjacent to a corresponding window 123. Each of the inlets 125 is configured to receive a desired gas 131 (by...). Figure 1B (Indicated by the dashed arrow in the diagram) and an air curtain 133 is formed in front of the corresponding window 123. Gas 131 may include inert gases such as helium, neon, argon, combinations thereof, etc. In some embodiments, the air curtain 133 protects the window 123 so that material deposited above the substrate 200 does not deposit on the window 123. This increases the lifetime of the window 123 and prevents a reduction in the intensity of the EM radiation 121. In some embodiments, each of the inlets 125 includes a valve 127 for controlling the flow rate of the gas 131.

[0037] Figure 2 A cross-sectional view of a substrate 200 according to some embodiments is shown. In some embodiments, the substrate 200 may be a wafer-level structure. In other embodiments, the substrate 200 may be a die-level structure. In some embodiments, the substrate 200 includes a semiconductor substrate 203, such as doped or undoped silicon, or an active layer of a semiconductor-on-insulator (SOI) substrate. The semiconductor substrate 203 may include other semiconductor materials, such as: germanium; compound semiconductors, including silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and / or indium antimonide; alloy semiconductors, including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and / or GaInAsP; or combinations thereof. Other substrates, such as multilayer substrates or gradient substrates, may also be used. The semiconductor substrate 203 has an active surface, sometimes referred to as the front side (e.g., Figure 2 The surface facing upwards), and sometimes referred to as the passive surface on the back side (e.g., the surface facing upwards), and the passive surface on the back side (e.g., the surface facing upwards). Figure 2 (The surface facing downwards).

[0038] Device (represented by a transistor) 205 may be formed on the front surface of semiconductor substrate 203. Device 205 may be an active device (e.g., a transistor, diode, etc.), a capacitor, a resistor, an inductor, etc., or a combination thereof. Interlayer dielectric (ILD) 207 is located above the front surface of semiconductor substrate 203. ILD 207 surrounds and may cover device 205. ILD 207 may include one or more dielectric layers formed of materials such as phosphosilicate glass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass (BPSG), undoped silicate glass (USG), etc., and may be formed using spin coating, lamination, ALD, CVD, etc.

[0039] The conductive plug 209 extends through the ILD 207 to be electrically and physically coupled to the device 205. For example, when the device 205 is a transistor, the conductive plug 209 can be coupled to the gate and source / drain regions of the transistor. The conductive plug 209 can be formed of tungsten, cobalt, nickel, copper, silver, gold, aluminum, or combinations thereof.

[0040] Interconnect structure 211 is located above ILD 207 and conductive plug 209. Interconnect structure 211 interconnects device 205 to form an integrated circuit. Interconnect structure 211 can be formed, for example, through a metallization pattern 211B in an inter-metal dielectric (IMD) 211A on ILD 207. IMD 211A can be formed using materials and methods similar to those used for ILD 207. Metallization pattern 211B can be formed from tungsten, cobalt, nickel, copper, silver, gold, aluminum, or combinations thereof. Metallization pattern 211B includes metal lines and vias within IMD 211A. In some embodiments, interconnect structure 211 can be formed from alternating layers of dielectric material (e.g., low-k dielectric material) and conductive material (e.g., copper) and can be formed by any suitable process (e.g., deposition, damascene, dual damascene, etc.), wherein vias interconnect layers of conductive material. Metallization pattern 211B of interconnect structure 211 is electrically coupled to device 205 through conductive plug 209.

[0041] The substrate 200 also includes pads 213 for external interconnection, such as aluminum pads. The pads 213 are located on the active side of the semiconductor substrate 203, such as in and / or on the interconnect structure 211. An insulating layer 215 is located on the interconnect structure 211, such that the pads 213 are embedded within the insulating layer 215. The insulating layer 215 may also be referred to as a passivation layer. In some embodiments, the insulating layer 215 may comprise one or more layers of silicon oxide, silicon nitride, silicon oxynitride, or combinations thereof, and may be formed using ALD, CVD, or the like. In some embodiments, the pads 213 and the insulating layer 215 may be formed by the following steps: forming a conductive material and patterning the conductive material over the interconnect structure 211 to form the pads 213; forming the insulating layer 215 over the interconnect structure 211 and the pads 213; and patterning the insulating layer 215 to form openings in the insulating layer 215 that expose the pads 213.

[0042] In some embodiments, under-bump metal (UBM) 217 ​​is formed over pad 213. UBM 217 extends through an opening in insulating layer 215 and is physically and electrically coupled to the corresponding pad 213. UBM 217 may be formed of one or more layers of suitable conductive material. In some embodiments, UBM 217 comprises three layers of conductive material, such as a titanium layer, a copper layer, and a nickel layer. Other arrangements of materials and layers, such as chromium / chromium-copper alloy / copper / gold arrangements, titanium / titanium-tungsten / copper arrangements, or copper / nickel / gold arrangements, may be used to form UBM 217. Any suitable material or layer of material that may be used for UBM 217 is fully intended to be included within the scope of this application.

[0043] After forming UBM217, a conductive connector 219 is formed on UBM217. The conductive connector 219 may be a ball grid array (BGA) connector, solder balls, metal pillars, controlled collapse chip connection (C4) bumps, microbumps, bumps formed by electroless nickel-palladium immersion gold (ENEPIG) technology, etc. The conductive connector 219 may include conductive materials such as solder, copper, aluminum, gold, nickel, silver, palladium, tin, etc., or combinations thereof. In some embodiments, the conductive connector 219 is formed by initially forming a solder layer through evaporation, electroplating, printing, solder transfer, ball placement, etc. Once the solder layer is structurally formed, reflow can be performed to shape the material into the desired bump shape. In another embodiment, the conductive connector 219 includes metal pillars (such as copper pillars) formed by sputtering, printing, electroplating, electroless plating, CVD, etc. The metal pillars may be solderless and have substantially vertical sidewalls. In some embodiments, a metal overlay is formed on the top of the metal pillars. The metal coating may include nickel, tin, tin-lead, gold, silver, palladium, indium, nickel-palladium-gold, nickel-gold, or combinations thereof, and may be formed by a plating process.

[0044] Further reference Figure 2 Deposition system 100 (see Figure 1A and Figure 1B The deposition system 100 can be used to deposit various layers over the semiconductor substrate 203 during the formation of the substrate 200. For example, the deposition system 100 can be used to deposit insulating layers (e.g., such as ILD 207, IMD 211A, or insulating layer 215), mask layers (e.g., such as mask layers used when forming device 205 or metallization pattern 211B), dummy gate layers (e.g., such as dummy gate layers used when forming device 205), and so on.

[0045] Figure 3 This is a flowchart illustrating a deposition method 300 according to some embodiments. In some embodiments, the deposition method 300 is performed by a deposition system 100 (see...). Figure 1A and Figure 1B In the illustrated embodiment, deposition method 300 is a plasma- and laser-assisted deposition (PLAD) process. Deposition method 300 can be integrated into an ALD process or a CVD process.

[0046] refer to Figure 1A , Figure 1B and Figure 3 In some embodiments, the deposition method 300 begins with step 301, in which the substrate 200 is loaded into chamber 101 of the deposition system 100. The substrate 200 is then placed on mounting platform 107.

[0047] In step 303, the precursor material is introduced into chamber 101 using inlet 103. In some embodiments, nozzle 105 is used to disperse the precursor material into chamber 101. In some embodiments, the flow rate of the precursor material is between about 5 sccm and about 5 slm. In some embodiments, when the deposited layer 201 comprises amorphous silicon (a-Si), the precursor material comprises a gas, such as SiH4, Si2H6, SiCl2H2, SiCl4, Si2Cl6, etc. In some embodiments, when the deposited layer 201 comprises amorphous carbon (aC), the precursor material comprises a gas mixture comprising CH4 and Ar, a gas mixture comprising CH and H2, a gas mixture comprising C2H and Ar, a gas mixture comprising C2H4 and H2, a gas mixture comprising C2H2 and Ar, a gas mixture comprising C2H2 and H2, etc.

[0048] In step 305, a gas curtain 133 is generated in front of one or more EM radiation sources 119. In some embodiments, an inert gas 131 (such as He, Ne, Ar, or combinations thereof) is introduced into chamber 101 through inlet 125 to generate the gas curtain 133. The gas curtain 133 protects the corresponding window 123 from the deposition process performed by the deposition system 100. This increases the lifetime of window 123 and avoids reducing the intensity of EM radiation 121 from the EM radiation sources 119. In some embodiments, the flow rate of gas 131 is between about 5 sccm and about 20 slm.

[0049] In step 307, plasma 135 is generated from the precursor material in chamber 101 of the deposition system 100. In some embodiments, a power source 115 is used to energize the second electrode 113 and ignite the plasma 135 in the gap between the nozzle 105 and the mounting platform 107. In some embodiments, the precursor material is decomposed into multiple components, such as charged components (electrons, positive ions, and / or negative ions) and neutral components (neutral radicals and / or undecomposed neutral molecules / atoms). In some embodiments, the plasma ignition process may not be able to precisely control the precursor material decomposition process, which may affect the quality of the deposited layer. The power source 115 can provide power between about 10 W and about 3000 W. The power source 115 can operate at frequencies between about 100 kHz and about 400 kHz, 13.56 MHz, 27.12 MHz, 60 MHz, 80 MHz, or 2.45 GHz.

[0050] In step 309, plasma 135 is subjected to EM radiation 121 from EM radiation source 119. In some embodiments, EM radiation 121 further decomposes the precursor material into various components. EM radiation 121 allows for precise control of the precursor decomposition reaction by precisely controlling the wavelength (or equivalently, energy) of EM radiation 121. Therefore, EM radiation source 119 can be selected based on the desired precursor decomposition reaction. In some embodiments, when the deposited layer 201 is an a-Si layer, the precursor material SiH4 can be decomposed into different components based on the wavelength (or equivalently, energy) of EM radiation 121. In some embodiments, when EM radiation source 119 with a wavelength of 306.13 nm (or equivalently, 4.5 eV energy) is used to generate EM radiation 121, the precursor material SiH4 is decomposed according to the following decomposition reaction.

[0051] SiH4→SiH3 + +H + +e - .

[0052] In some embodiments, when a 130.92 nm wavelength (or equivalently, 9.47 eV energy) EM radiation source 119 is used to generate EM radiation 121, the precursor material SiH4 is decomposed according to the following decomposition reaction.

[0053] SiH4→SiH2 + +2H + +2e - .

[0054] In some embodiments, when a 117.74 nm wavelength (or equivalently, 10.53 eV energy) EM radiation source 119 is used to generate EM radiation 121, the precursor material SiH4 is decomposed according to the following decomposition reaction.

[0055] SiH4→Si + +4H + +4e - .

[0056] In some embodiments, the composition of the deposited layer 201 can be precisely controlled by precisely controlling the precursor decomposition reaction. In some embodiments, when the deposited layer 201 is an a-Si layer, the hydrogen (H) content in the a-Si layer can be precisely controlled. In some embodiments, a substantially pure a-Si layer can be deposited using an EM radiation source 119 with a wavelength of 117.74 nm (or equivalently, 10.53 eV energy). In some embodiments, an a-Si layer with a silicon-to-hydrogen ratio (Si:H) of approximately 1:2 can be deposited using an EM radiation source 119 with a wavelength of 130.92 nm (or equivalently, 9.47 eV energy).

[0057] In some embodiments, when the deposition layer 201 is an aC layer, the hydrogen (H) content in the aC layer can be precisely controlled. In some embodiments, the hydrogen (H) content can be controlled from about 0 at% to about 80 at%. In some embodiments, when the deposition layer 201 is an aC layer, the bond type and ratio can be precisely controlled within the aC layer. In some embodiments, when the EM radiation source 119 is not used and the plasma 135 provides the deposition energy, the aC layer includes more sp2 bonds than sp3 bonds. By using the EM radiation source 119, the sp3 bond content can be increased to 100% when the structure of the aC layer is similar to that of diamond.

[0058] In step 311, a layer (e.g., deposition layer 201) is deposited over the substrate 200. In some embodiments, the decomposed precursor components react with each other to form deposition layer 201 over the substrate 200. In some embodiments, deposition method 300 is performed at a temperature between about 50°C and 400°C. In some embodiments, heating mechanism 109 of mounting platform 107 is used to heat substrate 200 to a desired temperature.

[0059] Figure 4 This is a flowchart illustrating a deposition method 400 according to some embodiments. In some embodiments, the deposition method 400 is performed by a deposition system 100 (see...). Figure 1A and Figure 1B In some embodiments, deposition method 400 is similar to deposition method 300 (see...). Figure 3 The difference lies in omitting the plasma generation process in step 307 above. In the illustrated embodiment, the deposition energy is provided by thermal energy and EM radiation energy. The deposition method 400 can be integrated into an ALD process or a CVD process.

[0060] refer to Figure 1A , Figure 1B and Figure 4 In some embodiments, the deposition method 400 begins at step 401, where the substrate 200 is loaded into chamber 101 of the deposition system 100. The substrate 200 is then placed on platform 107 on a base.

[0061] In step 403, the precursor material is introduced into chamber 101 using inlet 103. In some embodiments, nozzle 105 is used to distribute the precursor material into chamber 101. In some embodiments, step 403 is similar to reference... Figure 3 Step 303, which has been described, will not be repeated here.

[0062] In step 405, an air curtain 133 is generated in front of one or more EM radiation sources 119. In some embodiments, step 405 is similar to the above reference. Figure 3 Step 305, as described herein, will not be repeated here. In some embodiments, the air curtain 133 is used to protect the window 123 so that material deposited above the substrate 200 does not deposit on the window 123. Therefore, the lifetime of the window 123 is increased, and the reduction in the intensity of the EM radiation 121 is avoided.

[0063] In step 407, the precursor material is subjected to EM radiation 121 from one or more EM radiation sources 119. In some embodiments, step 407 is similar to the above reference. Figure 3 Step 309 is described herein and will not be repeated here.

[0064] In step 409, a layer (such as deposition layer 201) is deposited over substrate 200. In some embodiments, step 409 is similar to the above reference. Figure 3 Step 311, which was described in the previous section, will not be repeated here.

[0065] Figure 5 A cross-sectional view of a deposition system 500 according to some embodiments is shown. Deposition system 500 is similar to deposition system 100 (see...). Figure 1A), wherein identical components are labeled with the same reference numerals, and descriptions of identical components will not be repeated herein. Unlike deposition system 100, deposition system 500 includes a single EM radiation source 119. In some embodiments, deposition system 500 may be used to perform deposition method 300 (see Figure 3 ) and 400 (see Figure 4 ).

[0066] Figures 6A-6C A deposition system 600 according to some embodiments is shown. Figure 6A A three-dimensional view is shown. Figure 6B It shows along Figure 6A The cross-sectional view of section AA' in the diagram. Figure 6C It shows Figure 6A A detailed view of region 607 of the deposition system 600 shown. Deposition system 600 is similar to deposition system 100 (see...). Figure 1A (where identical components are labeled with the same reference numerals, and descriptions of identical components will not be repeated here.) In the illustrated embodiment, the mounting platform 107 has a larger diameter than the nozzle 105. Unlike the deposition system 100, the deposition system 600 includes an EM radiation source 601 instead of an EM radiation source 119.

[0067] In some embodiments, the EM radiation source 601 may be a UV system or a laser system, such as an F2 system (operating at a wavelength of 157 nm), an ArF system (operating at a wavelength of 193 nm), an Nd:YAG system (operating at wavelengths of 213 nm, 266 nm, 355 nm, or 532 nm), a He-Ag system (operating at a wavelength of 224.3 nm), a KCl system (operating at a wavelength of 222 nm), a KrF system (operating at a wavelength of 248 nm), a XeCl system (operating at a wavelength of 308 nm), a He-Cd system (operating at a wavelength of 325 nm), an N2 system (operating at a wavelength of 337.1 nm), an XeF system (operating at a wavelength of 351 nm), a He-Cd system (operating at a wavelength of 441.6 nm), etc.

[0068] In some embodiments, EM radiation sources 601 are positioned such that EM radiation 609 generated by each of the EM radiation sources 601 (by...) Figure 6BThe EM radiation sources 601 propagate towards the corresponding portion of the edge of the mounting platform 107 (or equivalently, towards the corresponding portion of the edge of the substrate 200 when the substrate 200 is placed on the mounting platform 107) as indicated by the arrows in the diagram. In some embodiments, the EM radiation sources 601 are positioned along the edge of the mounting platform 107 (or equivalently, along the edge of the substrate 200 when the substrate 200 is placed on the mounting platform 107) in a plan view and have a uniform spacing S1. The spacing S1 may be between about 200 mm and about 50 mm. In some embodiments, the deposition system 600 includes an even number of EM radiation sources 601. In some embodiments, when the mounting platform 107 has an annular shape in a plan view, the EM radiation sources 601 are grouped in pairs such that the EM radiation sources 601 in each pair are placed above the mounting platform 107 at points diametrically opposite to each other in a plan view (or equivalently, above the substrate 200 when the substrate 200 is placed on the mounting platform 107). In the illustrated embodiment, the deposition system 600 includes eight EM radiation sources 601. In some embodiments, eight EM radiation sources 601 may be positioned at the 1:30, 3:00, 4:30, 6:00, 7:30, 9:00, 10:30, and 12:00 positions, respectively. In some embodiments, EM radiation 609 generated by each of the EM radiation sources 601 illuminates a corresponding portion of the edge of the substrate. In some embodiments, each of the EM radiation sources 601 is directly above the corresponding portion of the edge of the substrate 200. In some embodiments, each of the EM radiation sources 601 overlaps with the edge of the mounting platform 107 (or equivalently, the edge of the substrate 200) in a planar view. In some embodiments, by placing a plurality of EM radiation sources 601 with uniform spacing above the mounting platform 107, the edge of the substrate 200 is uniformly illuminated by the EM radiation sources 601.

[0069] In some embodiments, EM radiation 609 from each of the EM radiation sources 601 enters chamber 101 through a corresponding window 603 in chamber 101. The material of the window 603 is selected to provide good vacuum isolation to chamber 101 and is transparent to the EM radiation 609. In some embodiments, the window 603 is made of quartz, glass, combinations thereof, etc. As described in more detail below, the EM radiation 609 from each of the EM radiation sources 601 is used to remove aggregated defects 615 formed in the deposited layer 201 at the edge of substrate 200. In some embodiments, the EM radiation 609 from each EM radiation source 601 is aligned with the corresponding portion of the edge of substrate 200 and burns away the aggregated defects 615.

[0070] In some embodiments, chamber 101 includes an inlet 605 adjacent to a corresponding window 603. Each of the inlets 605 is configured to receive a desired gas 611 (by... Figure 6C(Indicated by the dashed arrow in the diagram) and an air curtain 613 is formed in front of the corresponding window 603. The gas 611 may include an inert gas, such as helium, neon, argon, or combinations thereof. In some embodiments, the air curtain 613 protects the window 603 from material deposited above the substrate 200. This increases the lifetime of the window 603 and prevents a reduction in the intensity of the EM radiation 609.

[0071] Figure 7 This is a flowchart illustrating a deposition method 700 according to some embodiments. In some embodiments, the deposition method 700 is performed by a deposition system 600 (see...). Figures 6A-6C The deposition method 700 can be integrated into ALD or CVD processes.

[0072] refer to Figures 6A-6C and Figure 7 In some embodiments, the deposition method 700 begins with step 701, in which the substrate 200 is loaded into chamber 101 of the deposition system 600. The substrate 200 is then placed on mounting platform 107.

[0073] In step 703, the precursor material is introduced into chamber 101 using inlet 103. In some embodiments, nozzle 105 is used to distribute the precursor material into chamber 101. In some embodiments, step 703 is similar to the above reference. Figure 3 Step 303 is described herein and will not be repeated here.

[0074] In step 705, an air curtain 613 is generated in front of the EM radiation source 601. In some embodiments, an inert gas 611 (such as He, Ne, Ar, or combinations thereof) is introduced into chamber 101 through inlet 605 to generate the air curtain 613. The air curtain 613 protects the corresponding window 603 from the deposition process performed by the deposition system 600. This increases the lifetime of window 603 and prevents a decrease in the intensity of the EM radiation 609 from the EM radiation source 601. In some embodiments, the flow rate of the gas 611 is between approximately 5 sccm and approximately 20 slm.

[0075] In step 707, plasma 135 is generated by the precursor material in chamber 101 of the deposition system 600. In some embodiments, step 707 is similar to the above reference. Figure 3 Step 307 is described herein and will not be repeated here. In some embodiments, plasma 135 includes decomposed precursor components.

[0076] In step 709, a layer (such as deposition layer 201) is deposited over the substrate 200. In some embodiments, the decomposed precursor components react with each other to form deposition layer 201 over the substrate 200. In some embodiments, deposition method 700 is performed at a temperature between about 50°C and 400°C. In some embodiments, heating mechanism 109 of mounting platform 107 is used to heat substrate 200 to a desired temperature.

[0077] In step 711, EM radiation 609 from EM radiation source 601 is used to burn off aggregate defects 615 formed in the deposited layer 201 at the edge of substrate 200. In some embodiments, when the deposited layer 201 is an a-Si layer, the aggregate defects 615 may include hydrogen-doped a-Si (a-Si:H). In some embodiments, EM radiation source 601 may be a high-energy source having an energy greater than about 10 eV. In some embodiments, EM radiation 609 from each of the EM radiation sources 601 irradiates the corresponding portion of the edge of substrate 200 and burns off the aggregate defects 615. In some embodiments, each of the EM radiation sources 601 is located directly above the corresponding portion of the edge of substrate 200. In some embodiments, each of the EM radiation sources 601 overlaps with the edge of mounting platform 107 (or equivalently, the edge of substrate 200) in a plan view.

[0078] Figure 8 This is a flowchart illustrating a deposition method 800 according to some embodiments. In some embodiments, the deposition method 800 is performed by a deposition system 600 (see...). Figures 6A-6C In some embodiments, deposition method 800 is similar to deposition method 700 (see...). Figure 7 The difference lies in omitting the plasma generation process described in step 707. The deposition method 800 can be integrated into either an ALD or CVD process.

[0079] refer to Figures 6A-6C and Figure 8 In some embodiments, the deposition method 800 begins at step 801, where the substrate 200 is loaded into chamber 101 of the deposition system 100. The substrate 200 is then placed on mounting platform 107.

[0080] In step 803, the precursor material is introduced into chamber 101 using inlet 103. In some embodiments, nozzle 105 is used to distribute the precursor material into chamber 101. In some embodiments, step 803 is similar to reference... Figure 3 Step 303 is described herein and will not be repeated here.

[0081] In step 805, an air curtain 613 is generated in front of the EM radiation source 601. In some embodiments, step 805 is similar to the above reference. Figure 7Step 705 is described herein and will not be repeated here.

[0082] In step 807, a layer (such as deposition layer 201) is deposited over the substrate 200. In some embodiments, a precursor material is used to form deposition layer 201 over the substrate 200. In some embodiments, deposition method 800 is performed at a temperature between about 50°C and 400°C. In some embodiments, heating mechanism 109 of mounting platform 107 is used to heat substrate 200 to a desired temperature.

[0083] In step 809, EM radiation 609 from EM radiation source 601 is used to burn off aggregated defects 615 in the deposited layer 201 formed at the edge of substrate 200. In some embodiments, step 809 is similar to the above reference. Figure 7 Step 711 is described, and will not be repeated here.

[0084] Figure 9 A cross-sectional view of a deposition system 900 according to some embodiments is shown. The deposition system 900 is similar to the deposition system 100 (see...). Figure 1A (where identical components are labeled with the same reference numerals, and descriptions of identical components will not be repeated here.) In addition to the EM radiation source 119, the deposition system 900 also includes the components as described above. Figures 6A-6C The EM radiation source 601 is described, and will not be described again here.

[0085] Figure 10 This is a flowchart illustrating a deposition method 1000 according to some embodiments. In some embodiments, the deposition method 1000 is performed by a deposition system 900 (see...). Figure 9 The deposition method 1000 can be integrated into ALD or CVD processes.

[0086] refer to Figure 9 and Figure 10 In some embodiments, the deposition method 1000 begins with step 1001, in which the substrate 200 is loaded into chamber 101 of the deposition system 900. The substrate 200 is then placed on mounting platform 107.

[0087] In step 1003, the precursor material is introduced into chamber 101 using inlet 103. In some embodiments, nozzle 105 is used to distribute the precursor material into chamber 101. In some embodiments, step 1003 is similar to reference... Figure 3 Step 303 is described herein and will not be repeated here.

[0088] In step 1005, an air curtain 133 is generated in front of the EM radiation source 119 (see...). Figure 1B ), and generates an air curtain 613 in front of the EM radiation source 601 (see Figure 6C In some embodiments, an inert gas 131 (such as He, Ne, Ar, or combinations thereof) is introduced into chamber 101 through inlet 125 to create an air curtain 133 (see Figure 1B The gas curtain 133 protects the corresponding window 123 from the deposition process performed by the deposition system 900. This increases the lifetime of the window 123 and prevents a decrease in the intensity of the EM radiation 121 from the EM radiation source 119. In some embodiments, the flow rate of the gas 131 is between approximately 5 sccm and approximately 20 slm.

[0089] In some embodiments, an inert gas 611 (such as He, Ne, Ar, or combinations thereof) is introduced into chamber 101 through inlet 605 to create an air curtain 613 (see Figure 6C The gas curtain 613 protects the corresponding window 603 from the deposition process performed by the deposition system 900. This increases the lifetime of the window 603 and prevents a decrease in the intensity of the EM radiation 609 from the EM radiation source 601. In some embodiments, the flow rate of the gas 611 is between approximately 5 sccm and approximately 20 slm.

[0090] In step 1007, plasma 135 is generated by the precursor material in chamber 101 of the deposition system 900. In some embodiments, step 1007 is consistent with the above reference. Figure 3 Step 307 is similar and will not be repeated here.

[0091] In step 1009, plasma 135 is subjected to EM radiation 121 from EM radiation source 119. In some embodiments, EM radiation 121 further decomposes the precursor material into various components. In some embodiments, step 1009 is similar to the above reference. Figure 3 Step 309 is described herein and will not be repeated here.

[0092] In step 1011, a layer (e.g., deposition layer 201) is deposited over the substrate 200. In some embodiments, the decomposed precursor components react with each other to form deposition layer 201 over the substrate 200. In some embodiments, the deposition method 1000 is performed at a temperature between about 50°C and 400°C. In some embodiments, a heating mechanism 109 of the mounting platform 107 is used to heat the substrate 200 to a desired temperature.

[0093] In step 1013, EM radiation 609 from EM radiation source 601 is used to burn off aggregate defects 615 formed in the deposited layer 201 at the edge of substrate 200. In some embodiments, step 1013 is similar to the above reference. Figure 7 Step 711 is described, and will not be repeated here.

[0094] Figure 11 This is a flowchart illustrating a deposition method 1100 according to some embodiments. In some embodiments, the deposition method 1100 is performed by a deposition system 900 (see...). Figure 9 In some embodiments, deposition method 1100 is similar to deposition method 1000 (see...). Figure 10 The difference lies in omitting the plasma generation process described in step 1007. Deposition method 1100 can be integrated into either an ALD or CVD process.

[0095] refer to Figure 9 and Figure 11 In some embodiments, the deposition method 1100 begins at step 1101, in which the substrate 200 is loaded into chamber 101 of the deposition system 900. The substrate 200 is placed on mounting platform 107.

[0096] In step 1103, the precursor material is introduced into chamber 101 using inlet 103. In some embodiments, nozzle 105 is used to distribute the precursor material into chamber 101. In some embodiments, step 1103 is similar to reference... Figure 3 The description of step 303 is provided below and will not be repeated here.

[0097] In step 1105, an air curtain 133 is generated in front of the EM radiation source 119 (see...). Figure 1B ), and generates an air curtain 613 in front of the EM radiation source 601 (see Figure 6C In some embodiments, step 1105 is similar to the above reference. Figure 10 Step 1005 is described herein and will not be repeated here.

[0098] In step 1107, the precursor material is subjected to EM radiation 121 from EM radiation source 119. In some embodiments, EM radiation 121 decomposes the precursor material into various components. In some embodiments, step 1107 is similar to the above reference. Figure 3 Step 309 is described herein and will not be repeated here.

[0099] In step 1109, a layer (such as deposition layer 201) is deposited over the substrate 200. In some embodiments, the decomposed precursor components react with each other to form deposition layer 201 over the substrate 200. In some embodiments, the deposition method 1100 is performed at a temperature between about 50°C and 400°C. In some embodiments, a heating mechanism 109 of the mounting platform 107 is used to heat the substrate 200 to a desired temperature.

[0100] In step 1111, EM radiation 609 from EM radiation source 601 is used to burn off aggregate defects 615 formed in the deposited layer 201 at the edge of substrate 200. In some embodiments, step 1111 is similar to the above reference. Figure 7 Step 711 is described, and will not be repeated here.

[0101] Figure 12 A cross-sectional view of a deposition system 1200 according to some embodiments is shown. The deposition system 1200 is similar to the deposition system 900 (see...). Figure 9 (where the same components are labeled with the same reference numerals, and descriptions of the same components are not repeated here.) Unlike deposition system 900, deposition system 1200 includes a single EM radiation source 119. In some embodiments, deposition system 1200 can be used to perform deposition methods 1000 and 1100.

[0102] The embodiments can provide benefits. The various embodiments discussed herein allow for the deposition of void-free and seamless layers with reduced levels of impurities and defects, and provide additional parameters (e.g., such as EM radiation intensity and / or wavelength) for adjusting the deposition process (e.g., adjusting the composition of the deposited layer).

[0103] According to one embodiment, a method includes: placing a substrate above a platform in a chamber of a deposition system; introducing a precursor material into the chamber; generating a first gas curtain in front of a first electromagnetic (EM) radiation source coupled to the chamber; generating a plasma from the precursor material in the chamber, wherein the plasma includes dissociated components of the precursor material; subjecting the plasma to first EM radiation from the first EM radiation source; the first EM radiation further dissociating the precursor material; depositing a layer over the substrate; the layer comprising reaction products of the dissociated components of the precursor material. In one embodiment, generating the first gas curtain in front of the first EM radiation source includes allowing an inert gas to flow into the chamber in front of the first EM radiation source. In one embodiment, the first EM radiation source is an ultraviolet (UV) source or a laser source. In one embodiment, the method further includes generating a second gas curtain in front of a second EM radiation source coupled to the chamber. In one embodiment, the method further includes burning off accumulated defects in the layer at an edge of the substrate using second EM radiation from the second EM radiation source, wherein the second EM radiation source is located directly above the edge of the substrate. In one embodiment, the method further includes conditioning the temperature of the substrate to a desired temperature. In one embodiment, the first EM radiation enters the chamber through a window comprising a material transparent to the first EM radiation. In one embodiment, the precursor material includes SiH4, Si2H6, SiCl2H2, SiCl4, or Si2Cl6, and its middle layer includes amorphous silicon (a-Si).

[0104] According to another embodiment, a method includes placing a substrate on a platform in a chamber of a deposition system. Precursor material is allowed to flow into the chamber. A first gas curtain is generated in front of a first electromagnetic (EM) radiation source coupled to the chamber. Plasma is generated from the precursor material in the chamber. The plasma includes dissociated components of the precursor material. A layer is deposited over the substrate. The layer contains reaction products of the dissociated components of the precursor material. The layer contains aggregated defects at the edges of the substrate. The aggregated defects are removed from the layer using first EM radiation from the first EM radiation source. In one embodiment, generating the first gas curtain in front of the first EM radiation source includes allowing an inert gas to flow into the chamber in front of the first EM radiation source. In one embodiment, the first EM radiation source is an ultraviolet (UV) source or a laser source. In one embodiment, the method further includes generating a second gas curtain in front of a second EM radiation source coupled to the chamber. In one embodiment, the method further includes subjecting the plasma to second EM radiation from the second EM radiation source before depositing the layer over the substrate, wherein the second EM radiation further dissociates the precursor material. In one embodiment, the first EM radiation burns off the aggregated defects. In one embodiment, the first EM radiation source overlaps with the edge of the platform in a plan view.

[0105] According to yet another embodiment, a system includes: a chamber having a first window on its side; a platform located within the chamber, the platform including a first electrode; a nozzle located above the platform within the chamber, the nozzle including a second electrode; a plasma power source coupled to the second electrode; and a first electromagnetic (EM) radiation source attached to the side of the chamber. First EM radiation generated by the first EM radiation source enters the chamber through the first window and propagates between the platform and the nozzle. In one embodiment, the system further includes a second EM radiation source attached to the top of the chamber, the second EM radiation generated by the second EM radiation source entering the chamber through a second window in the top of the chamber. In one embodiment, the second EM radiation sources are positioned along the edge of the platform in a plan view. In one embodiment, the second EM radiation sources have uniform spacing. In one embodiment, the first EM radiation source is an ultraviolet (UV) source or a laser source.

[0106] The foregoing outlines features of several embodiments to enable those skilled in the art to better understand various aspects of this disclosure. Those skilled in the art will understand that they can readily use this disclosure as a basis for designing or modifying other processes and structures to achieve the same purposes and / or advantages of the embodiments described herein. Those skilled in the art will also recognize that such equivalent structures do not depart from the spirit and scope of the invention, and that various changes, substitutions, and modifications can be made within the invention without departing from its spirit and scope.

Claims

1. A deposition method, comprising: Place the substrate above the mounting platform in the chamber of the deposition system; The precursor material is introduced into the chamber and dispersed into the chamber using a nozzle; After the precursor material is introduced, an inert gas is allowed to flow into the chamber in front of the first and second electromagnetic radiation sources to create an air curtain in front of the first and second electromagnetic radiation sources coupled to the chamber. Plasma is generated from the precursor material in the chamber, wherein the plasma includes dissociated components of the precursor material; The plasma is subjected to first electromagnetic radiation from the first electromagnetic radiation source, wherein the first electromagnetic radiation further dissociates the precursor material; A layer is deposited over the substrate, the layer comprising reaction products of the dissociated components of the precursor material; and Cluster defects in the layer are burned off at the edge of the substrate using second electromagnetic radiation from the second electromagnetic radiation source. The first electromagnetic radiation generated by the first electromagnetic radiation source enters the chamber through the first window and propagates between the mounting platform and the nozzle. The second electromagnetic radiation source is placed along the edge of the substrate in the plan view and has a uniform spacing between 50 mm and 200 mm. The second electromagnetic radiation generated by each of the second electromagnetic radiation sources enters the chamber through the corresponding second window and irradiates the corresponding portion of the edge of the substrate. The air curtain is used to protect the first window and the second window so that the material deposited on the substrate does not deposit on the first window and the second window.

2. The deposition method according to claim 1, wherein, The installation platform has a ring shape in the plan view.

3. The deposition method according to claim 1, wherein, The first electromagnetic radiation source is an ultraviolet source or a laser source.

4. The deposition method according to claim 1, wherein, The second electromagnetic radiation source is an ultraviolet source or a laser source.

5. The deposition method according to claim 1, wherein, The material of the first window is selected to be transparent to the first electromagnetic radiation.

6. The deposition method according to claim 1 further includes adjusting the temperature of the substrate to a desired temperature.

7. The deposition method according to claim 1, wherein, The material of the second window is selected to be transparent to the second electromagnetic radiation.

8. The deposition method according to claim 1, wherein, The precursor material includes SiH4, Si2H6, SiCl2H2, SiCl4, or Si2Cl6, and the layer includes amorphous silicon.

9. A deposition method, comprising: Place the substrate above the mounting platform in the chamber of the deposition system; The precursor material is introduced into the chamber and dispersed into the chamber using a nozzle; After the precursor material is introduced, an inert gas is allowed to flow into the chamber in front of the first and second electromagnetic radiation sources to create an air curtain in front of the first and second electromagnetic radiation sources coupled to the chamber. The precursor material is subjected to first electromagnetic radiation from the first electromagnetic radiation source, and the first electromagnetic radiation dissociates the precursor material. A layer is deposited over the substrate, the layer comprising reaction products of the dissociated components of the precursor material; as well as Cluster defects in the layer are burned off at the edge of the substrate using second electromagnetic radiation from the second electromagnetic radiation source. The first electromagnetic radiation generated by the first electromagnetic radiation source enters the chamber through the first window and propagates between the mounting platform and the nozzle. The second electromagnetic radiation source is placed along the edge of the substrate in the plan view and has a uniform spacing between 50 mm and 200 mm. The second electromagnetic radiation generated by each of the second electromagnetic radiation sources enters the chamber through the corresponding second window and irradiates the corresponding portion of the edge of the substrate. The air curtain is used to protect the first window and the second window so that the material deposited on the substrate does not deposit on the first window and the second window.

10. The deposition method according to claim 9, wherein, The installation platform has a ring shape in the plan view.

11. The deposition method according to claim 9, wherein, The first electromagnetic radiation source is an ultraviolet source or a laser source.

12. The deposition method according to claim 9, further comprising: The temperature of the substrate is adjusted to the desired temperature.

13. The deposition method according to claim 12, wherein, The material of the first window is selected to be transparent to the first electromagnetic radiation, and the material of the second window is selected to be transparent to the second electromagnetic radiation.

14. The deposition method according to claim 9, wherein, The second electromagnetic radiation source is an ultraviolet source or a laser source.

15. The deposition method according to claim 9, wherein, The precursor material includes SiH4, Si2H6, SiCl2H2, SiCl4, or Si2Cl6, and the layer includes amorphous silicon.

16. A sedimentation system, comprising: The room has a first window on its side and a second window on its top; An installation platform is located in the chamber, and the installation platform includes a first electrode; A nozzle, located above the mounting platform in the chamber, includes a second electrode; A plasma power source is coupled to the second electrode; as well as A first electromagnetic radiation source is attached to the side of the chamber, and the first electromagnetic radiation generated by the first electromagnetic radiation source enters the chamber through the first window and propagates between the mounting platform and the nozzle. as well as A second electromagnetic radiation source is attached to the top of the chamber. The second electromagnetic radiation generated by the second electromagnetic radiation source enters the chamber through the second window and irradiates the corresponding portion of the edge of the substrate placed on the mounting platform. The second electromagnetic radiation source is placed along the edge of the mounting platform in a plan view and has a uniform spacing between 50 mm and 200 mm.

17. The deposition system according to claim 16, wherein, The installation platform has a ring shape in the plan view.

18. The deposition system according to claim 16, wherein, The first electromagnetic radiation source is separated from the room through the first window.

19. The deposition system according to claim 16, wherein, The second electromagnetic radiation source is separated from the room through the second window.

20. The deposition system according to claim 16, wherein, The first electromagnetic radiation source is an ultraviolet source or a laser source.

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