A method of conditioning to reduce lithographic development defects

Abstract

The application discloses a kind of regulation methods for reducing photolithography developing defects, the spin-coating immersion developing process is regulated, comprising the following steps: the developing surface of semiconductor substrate is infiltrated and washed, rotation is stopped, inner cup height is adjusted, so that semiconductor substrate is located in the cavity inside inner cup, rotation is started, spray developer, develop, stop rotation, adjust inner cup height, so that semiconductor substrate and the plane above the inclined surface of inner cup are in the same level, start rotation, remove the impurities on the surface of substrate.The regulation method of the application can effectively avoid the formation of defects on the surface of semiconductor substrate by regulating the lifting movement of inner cup, the rotating movement of semiconductor substrate, water spraying, liquid spraying and other actions during the developing process, and can also reduce the cleaning frequency of equipment, thereby improving the yield of effective dies, the yield of effective dies is improved by 5%-20%, and the production efficiency is improved and the cost is reduced, with high use value and good application prospect.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of semiconductor chip processing and manufacturing, and relates to a photoetching developing method, in particular to a regulation method for reducing photoetching developing defects. BACKGROUND

[0002] In the semiconductor photoetching process, after the semiconductor substrate (such as a silicon wafer, an LED wafer, a liquid crystal display substrate, a silicon nitride wafer, etc.) is coated with glue and aligned and exposed, the pattern of the mask can be completely transferred to the semiconductor substrate through the reaction of the developing solution and the photoresist. For positive photoresist, the exposed photoresist becomes soluble, and the non-exposed photoresist is insoluble, and for negative photoresist, it is just the opposite. The soluble photoresist caused by exposure is removed by developing, thus obtaining an accurate copy of the mask pattern in the photoresist.

[0003] The photoresist developing method mainly includes continuous spray developing and puddle developing. In the continuous spray developing method, the developing solution is continuously sprayed in the form of mist while the semiconductor substrate (such as a silicon wafer) is rotated at a low speed, and after the developing process is completed, the silicon wafer surface is cleaned with normal pressure deionized water. In the puddle developing method, a small amount of developing solution is sprayed onto the silicon wafer surface, at this time, the spraying arm can move, the silicon wafer is rotated at a low speed until the developing solution covers the whole surface, the developing solution stays for a period of time, then the silicon wafer is slightly rotated to promote the reaction, after that, the silicon wafer is rotated at a high speed to shake off the developing solution and the reaction product, then the developing solution is sprayed onto the silicon wafer surface again, after multiple cycles, the silicon wafer surface is cleaned with deionized water, and finally the silicon wafer is rotated at a high speed to shake off the water. However, in the developing process, the rotation of the silicon wafer (wafer) is not completely horizontal, and there is an up-and-down swing, which is not conducive to the release of the reaction product. When the inner cup size is too large, the same up-and-down swing will make the distance longer, and the reaction product will hit the upper edge of the cup (non-bevel surface) after being shaken off, causing back splash, and the back splash will fall on the silicon wafer to form scum contamination. In addition, when the wafer is rotating at a high speed, the cup also performs a lifting action, which will also cause the reaction product to hit the upper edge of the cup (non-bevel surface) after being shaken off, causing back splash, which will also fall on the silicon wafer to form scum contamination, and it is easy to increase the cleaning frequency of the equipment. In addition, in the developing solution droplet process, the arm with the developing solution nozzle / nozzle moves back and forth at the center of the silicon wafer, that is, the developing solution is sprayed back and forth at both ends of the silicon wafer while the silicon wafer is rotating, at this time, due to the action of friction, more scum residues will be left in the area where the droplets pass after developing. It can be seen that the existing developing method has certain technical defects when meeting certain processes, such as Figure 1 and Figure 2As shown, the developer scum is found on the wafer during the ADI defect scanning, the obvious residual substances can be seen in the developed area and the non-developed area, at the same time, the developer scum on the wafer cannot be removed by redeveloping or rinsing, which indicates that the reaction substances are deposited on the pattern surface during the developing process, and the adhesion is relatively firm, which is difficult to clean, and the residual substances caused by the existing developing mode affect the wafer edge and the middle swing droplet, and reduce the yield of the effective die, and the yield of the effective die is as high as 20% or more. SUMMARY

[0004] The technical problem solved by the present application is to overcome the shortcomings of the prior art, and provide a regulation method for reducing photolithography developing defects, which can effectively reduce the scum residue on the semiconductor substrate during the photolithography developing process, thereby effectively improving the yield of the effective die.

[0005] To solve the above technical problems, the technical scheme adopted by the present application is:

[0006] A regulation method for reducing photolithography developing defects, the regulation method is to regulate the spin immersion developing process, comprising the following steps:

[0007] S1, soaking and rinsing the developing surface of the semiconductor substrate;

[0008] S2, after rinsing is completed, stopping the rotation of the semiconductor substrate, adjusting the inner cup height of the developing device, so that the semiconductor substrate is located inside the cavity of the inner cup, starting the rotation of the semiconductor substrate, and spraying the developing liquid to the center position of the surface of the semiconductor substrate;

[0009] S3, repeatedly rotating and standing the semiconductor substrate with the developing liquid, and completing the developing of the surface of the semiconductor substrate;

[0010] S4, after the developing is completed, the semiconductor substrate stops rotating, the inner cup height of the developing device is adjusted, so that the semiconductor substrate and the plane above the inclined surface of the inner cup are at the same level, the rotation of the semiconductor substrate is started, and the impurities including the reaction products on the surface of the semiconductor substrate are removed.

[0011] The regulation method for reducing photolithography developing defects is further improved, and before the soaking and rinsing of the developing surface of the semiconductor substrate in S1, the following treatment is further included:

[0012] The size of the inner cup of the developing device is adjusted, so that the difference between the diameter above the inclined surface of the inner cup and the diameter of the semiconductor substrate is ≤20mm;

[0013] Fixing a semiconductor substrate on a rotating chuck of a developing device with a developing surface facing upward; the semiconductor substrate comprises one of a silicon wafer, an LED wafer, a liquid crystal display substrate, and a silicon nitride wafer.

[0014] The above-mentioned regulation method for reducing photolithography developing defects is further improved, and S1 comprises the following steps.

[0015] S1-1, adjusting the inner cup height of the developing device so that the semiconductor substrate is located inside the cavity of the inner cup, and moving the deionized water nozzle of the developing device to above the center of the semiconductor substrate;

[0016] S1-2, starting the rotation of the semiconductor substrate, and spraying deionized water to the surface of the semiconductor substrate to soak the semiconductor substrate;

[0017] S1-3, stopping the water spraying and the rotation of the semiconductor substrate, and moving the deionized water nozzle back to the original position;

[0018] S1-4, starting the rotation of the semiconductor substrate to flush the semiconductor substrate and remove the deionized water on the surface of the semiconductor substrate.

[0019] The above-mentioned regulation method for reducing photolithography developing defects is further improved, and in S1-1, the inner cup height of the developing device is adjusted so that the semiconductor substrate is located at the plane where the center of the bevel surface of the inner cup is located.

[0020] The above-mentioned regulation method for reducing photolithography developing defects is further improved, and in S1-2, the rotation speed of the semiconductor substrate is controlled to be 50 rpm-1000 rpm during the soaking process; and the soaking time is 3 s-5 s.

[0021] The above-mentioned regulation method for reducing photolithography developing defects is further improved, and in S1-4, the rotation speed of the semiconductor substrate is controlled to be 1000 rpm-3000 rpm during the flushing process; and the flushing time is 1 s-3 s.

[0022] The above-mentioned regulation method for reducing photolithography developing defects is further improved, and S2 comprises the following steps.

[0023] S2-1, after the flushing is completed, stopping the rotation of the semiconductor substrate, adjusting the inner cup height of the developing device so that the semiconductor substrate is located at the same horizontal plane as the plane above the bevel surface of the inner cup, and moving the developing liquid nozzle of the developing device to above the center of the semiconductor substrate;

[0024] S2-2, adjusting the inner cup height of the developing device so that the semiconductor substrate is located inside the cavity of the inner cup, starting the rotation of the semiconductor substrate, and spraying developing liquid to the center of the surface of the semiconductor substrate so that the developing liquid spreads over the surface of the semiconductor substrate from inside to outside.

[0025] S2-3, stop spraying the developing solution, and move the developing solution nozzle back to the original position.

[0026] The above-mentioned regulation method for reducing lithography developing defects is further improved, in S2-2, the inner cup height of the developing device is adjusted so that the semiconductor substrate is located at a plane where the center position of the bevel surface of the inner cup is located; the rotating speed of the semiconductor substrate is controlled to be ≤500 rpm; and the spraying amount of the developing solution is 60 mL to 100 mL per semiconductor substrate surface.

[0027] The above-mentioned regulation method for reducing lithography developing defects is further improved, in S3, the semiconductor substrate covered with the developing solution is repeatedly rotated and placed alternately, and the time is 30 s to 50 s; the rotating speed of the semiconductor substrate is controlled to be 10 rpm to 30 rpm, and the time of a single rotation is ≤3 s; and the time of a single placement is 3 s to 10 s.

[0028] The above-mentioned regulation method for reducing lithography developing defects is further improved, in S4, the rotating speed of the semiconductor substrate is controlled to be 100 rpm to 1500 rpm; and the rotating time is 2 s to 3 s.

[0029] The above-mentioned regulation method for reducing lithography developing defects is further improved, in S4, after the impurities including the reaction products on the semiconductor substrate surface are removed, the semiconductor substrate surface is further developed, including the following steps:

[0030] S5-1, the rotation of the semiconductor substrate is stopped, the inner cup height of the developing device is adjusted so that the semiconductor substrate and the plane above the bevel surface of the inner cup are at the same level, and the developing solution nozzle of the developing device is moved above the center position of the semiconductor substrate;

[0031] S5-2, the inner cup height of the developing device is adjusted so that the semiconductor substrate is located inside the cavity of the inner cup, the rotation of the semiconductor substrate is started, the developing solution is sprayed to the center position of the semiconductor substrate surface, and the developing solution is spread on the semiconductor substrate surface from inside to outside;

[0032] S5-3, stop spraying the developing solution, and move the developing solution nozzle back to the original position.

[0033] S5-4, the semiconductor substrate covered with the developing solution is repeatedly rotated and placed alternately, and the secondary development of the semiconductor substrate surface is completed.

[0034] The regulation method for reducing the defects of the photoetching and developing further improves that in the S5-2, the inner cup height of the developing device is adjusted so that the semiconductor substrate is located at the plane where the center of the inner cup bevel surface is located; the rotating speed of the semiconductor substrate is controlled to be less than or equal to 30 rpm; and the spraying amount of the developing solution is 60 mL to 100 mL per semiconductor substrate surface.

[0035] The regulation method for reducing the defects of the photoetching and developing further improves that in the S5-4, the semiconductor substrate covered with the developing solution is repeatedly rotated and placed alternately for 10 s to 50 s; the rotating speed of the semiconductor substrate is controlled to be 10 rpm to 30 rpm, and the time of the single rotation is less than or equal to 3 s; and the time of the single placement is 3 s to 10 s.

[0036] The regulation method for reducing the defects of the photoetching and developing further improves that in the S5-4, the semiconductor substrate covered with the developing solution is repeatedly rotated and placed alternately for 10 s to 50 s; the rotating speed of the semiconductor substrate is controlled to be 10 rpm to 30 rpm, and the time of the single rotation is less than or equal to 3 s; and the time of the single placement is 3 s to 10 s.

[0037] S5-5, the semiconductor substrate is flushed at a rotating speed of 500 rpm to 2000 rpm for 10 s to 20 s;

[0038] S5-6, the semiconductor substrate is spun dry at a rotating speed of 2000 rpm to 3500 rpm for 10 s to 20 s;

[0039] S5-7, the semiconductor substrate is stopped rotating at a descending speed of 2000 rpm / s.

[0040] Compared with the prior art, the present application has the following advantages:

[0041] (1) In view of the defects such as residue of floating slag in the existing rotary immersion developing process, difficulty in cleaning after the appearance of floating slag, and significant reduction of effective die yield caused by the defects, the application creatively provides a regulating method for reducing defects in photolithography development, after rinsing the semiconductor substrate, the rotation of the semiconductor substrate is stopped, the inner cup height of the developing device is adjusted, the semiconductor substrate is located inside the cavity of the inner cup, then the rotation of the semiconductor substrate is started, and the developing solution is sprayed to the center position of the surface of the semiconductor substrate, by directly spraying the developing solution to the center position of the surface of the semiconductor substrate, and by using the centrifugal effect, the surface of the semiconductor substrate can be uniformly covered with the developing solution, and the utilization rate of the developing solution can be effectively improved, the developing solution can be prevented from being sprayed to the surface of other equipment, the cleaning frequency of the equipment can be reduced, the cost can be saved, at the same time, before development, the adjustment of the inner cup height is completed, so that the inner cup does not move up and down during the development process, which can effectively prevent the reaction product from splashing back to the surface of the semiconductor substrate, and is beneficial to reducing the formation of floating slag residue; on this basis, the semiconductor substrate covered with the developing solution is repeatedly rotated and placed alternately, and the development of the surface of the semiconductor substrate is completed, during the development process, the developing solution does not need to be continuously sprayed to the semiconductor substrate, which is beneficial to reducing the development cost, can prevent uneven coverage of the developing solution, is beneficial to improving the development effect, and is beneficial to reducing the formation of floating slag defects of the semiconductor substrate; finally, after the development is completed, the rotation of the semiconductor substrate is stopped, the inner cup height of the developing device is adjusted, so that the semiconductor substrate is at the same level as the plane above the inclined surface of the inner cup, at this time, the rotation of the semiconductor substrate is started, and the impurities including the reaction product on the surface of the semiconductor substrate are removed, during this process, by cooperatively controlling the lifting movement of the inner cup and the rotating movement of the semiconductor substrate, the reaction product is released and discharged outward through the inclined surface of the inner cup under the action of centrifugal force, which can effectively prevent the residue of floating slag on the surface of the semiconductor substrate caused by the reaction product splashing back, is beneficial to improving the yield of effective dies, and can effectively reduce the contamination of the sidewall of the development outer cavity, which is beneficial to reducing the cleaning frequency of the equipment, which is very beneficial to improving the production efficiency and reducing the production cost. Compared with the conventional development, in the application, more attention is paid to the matching of the position of the inner cup and the development action, specifically, before moving the inner cup up and down, the rotation of the semiconductor substrate is stopped, and during the rotation of the semiconductor substrate, the inner cup does not move up and down, that is, during the development process, the actions of the inner cup and the semiconductor substrate occur intermittently, not synchronously, which can effectively reduce the splashing of the developing solution or the reaction product, and improve the yield, while in the conventional development process, the actions of the inner cup and the semiconductor substrate occur continuously, there is no state switching waiting process, that is, when the inner cup rises or falls, the substrate rotates, which is not conducive to reducing the splashing of the developing solution or the reaction product, and is not conducive to improving the yield.It can be seen that the control method can effectively avoid the formation of defects on the surface of the semiconductor substrate and reduce the cleaning frequency of the equipment, thereby improving the yield of effective dies by 5%-20%, improving the production efficiency and reducing the cost, and having high use value and good application prospect.

[0042] (2) In the application, the inner cup size of the developing device is also optimized. By adjusting the inner cup size of the developing device, the difference between the diameter above the inclined surface of the inner cup and the diameter of the semiconductor substrate is less than or equal to 20 mm. At this time, the diameter of the semiconductor substrate matches the diameter above the inclined surface of the inner cup. This can not only ensure the up-and-down movement and normal rotation of the semiconductor substrate in the inner cavity of the inner cup, but also facilitate the coordinated control of the up-and-down movement of the inner cup and the rotation of the semiconductor substrate. In addition, during the rotation of the semiconductor substrate, the defects caused by the reaction after being thrown away and hitting the upper edge (non-inclined surface) of the inner cup can be effectively overcome, thereby effectively reducing the reaction back splash on the semiconductor substrate.

[0043] (3) In the application, the rotation condition of the semiconductor substrate is also optimized. By optimizing the rotation speed of the semiconductor substrate during the infiltration process to be 50 rpm-1000 rpm and the time to be 3 s-5 s, the deionized water can better infiltrate the surface of the semiconductor substrate. At the same time, after the infiltration is completed, by increasing the rotation speed of the semiconductor substrate to 1000 rpm-2000 rpm, the impurities on the surface of the semiconductor substrate can be quickly and completely removed. In addition, in the application, when the developing liquid is sprayed onto the surface of the semiconductor substrate, by optimizing the rotation speed of the semiconductor substrate during the rotation process to be less than or equal to 500 rpm, the developing liquid can be quickly and uniformly laid on the surface of the semiconductor substrate. This can not only effectively improve the utilization rate of the developing liquid, but also further avoid the waste of raw materials and possible secondary pollution. At the same time, after the surface of the semiconductor substrate is fully covered with the developing liquid, the semiconductor substrate is developed. During the developing process, the semiconductor substrate is repeatedly rotated and placed for 30 s-50 s. The time of single rotation is less than or equal to 3 s, and the time of single placement is 3 s-10 s. In this way, the development of the semiconductor substrate can be realized. By optimizing the rotation speed of the semiconductor substrate during the rotation process to be 10 rpm-30 rpm, the developing process can be carried out under the condition of low rotation speed. This can also reduce the centrifugal force of the reaction on the surface of the semiconductor substrate, avoid its outward splash, and also be beneficial to avoid the pollution caused by the splash on the surface of the semiconductor substrate and in the developing cavity.

[0044] (4) In the present application, after removing the impurities on the surface of the semiconductor substrate including the reaction products, the surface of the semiconductor substrate is further subjected to secondary development, which brings the following benefits: on the one hand, the development of the exposed area of the semiconductor substrate is cleaner, and there is no PR residue; on the other hand, the secondary liquid spraying compensates for the poor immersion of some areas, and reduces the pattern loss. At the same time, in the process of spraying the developing solution, by controlling the rotation speed of the semiconductor substrate ≤ 30 rpm, it is more conducive to the immersion of the developing solution into the semiconductor substrate, thereby being conducive to obtaining better development effect, and when the rotation speed is too fast, due to the excessive centrifugal force, the developing solution will be thrown out of the surface of the semiconductor substrate, which is not only not conducive to improving the immersion effect, but also causes the developing solution to splash back and raw materials to be wasted.

[0045] (5) In the present application, after the secondary development on the surface of the semiconductor substrate is completed, by controlling the rotation speed of the semiconductor substrate to be 500 rpm-2000 rpm, the centrifugal force generated during rotation can be utilized, and the impurities on the surface of the semiconductor substrate can be effectively removed under the driving action of water, so as to realize effective cleaning of the semiconductor substrate, and then under the condition that the rotation speed is 2000 rpm-3500 rpm, the water on the surface of the semiconductor substrate is thrown off by utilizing the centrifugal force. BRIEF DESCRIPTION OF DRAWINGS

[0046] In order to make the purpose, technical scheme and advantages of the embodiments of the present application more clear, the technical scheme in the embodiments of the present application will be described clearly and completely below in combination with the drawings in the embodiments of the present application.

[0047] Figure 1 It is an SEM image of the local exposed area of the surface of the silicon wafer in the existing spin-coating immersion development process.

[0048] Figure 2 It is an SEM image of the local non-exposed area of the surface of the silicon wafer in the existing spin-coating immersion development process.

[0049] Figure 3 It is a regulation flow chart for reducing lithography development defects in Embodiment 1 of the present application.

[0050] Figure 4 It is an SEM image of the local exposed area of the surface of the silicon wafer after the regulation treatment in Embodiment 1 of the present application.

[0051] Figure 5 It is a structure schematic diagram of the developing device in Embodiment 1 of the present application.

[0052] Figure 6 It is a process schematic diagram of the development in the developing device in Embodiment 1 of the present application. DETAILED DESCRIPTION

[0053] The application will be further described in conjunction with the accompanying drawings and specific preferred embodiments, but the protection scope of the application is not limited thereby.

[0054] Embodiment 1

[0055] A regulation method for reducing lithography developing defects, specifically for regulating a spin immersion developing process, as shown in the following steps: Figure 3

[0056] S1, immersing and rinsing the developing surface of a silicon wafer, specifically:

[0057] S1-1, adjusting the inner cup size of the developing device, so that the difference between the diameter above the bevel surface of the inner cup and the diameter of the semiconductor wafer is 20 mm.

[0058] S1-2, fixing the silicon wafer on the rotating chuck of the developing device with the developing surface upward.

[0059] S1-3, adjusting the inner cup height of the developing device so that the silicon wafer is located inside the cavity of the inner cup, specifically, the silicon wafer is located at the center position of the plane of the bevel surface of the inner cup, and moving the deionized water nozzle of the developing device above the center position of the silicon wafer.

[0060] S1-4, starting the rotation of the silicon wafer, controlling the rotation speed of the silicon wafer to be 500 rpm, spraying deionized water on the surface of the silicon wafer to immerse the silicon wafer, and the time is 3 s.

[0061] S1-5, stopping the water spraying and the rotation of the silicon wafer, and moving the deionized water nozzle back to the original position (HOME).

[0062] S1-6, starting the rotation of the silicon wafer, controlling the rotation speed of the silicon wafer to be 2000 rpm, rinsing the silicon wafer, and the time is 2 s to remove the deionized water on the surface of the silicon wafer.

[0063] S2, after rinsing is completed, stopping the rotation of the silicon wafer, adjusting the inner cup height of the developing device so that the silicon wafer is located inside the cavity of the inner cup, starting the rotation of the silicon wafer, and spraying the developing solution to the center position of the surface of the silicon wafer, specifically:

[0064] S2-1, after rinsing is completed, stopping the rotation of the silicon wafer, adjusting the inner cup height of the developing device so that the silicon wafer is located at the same horizontal plane as the plane above the bevel surface of the inner cup, and moving the developing solution nozzle of the developing device above the center position of the silicon wafer.

[0065] ​S2-2. Adjust the height of the inner cup of the developing device so that the silicon wafer is located inside the cavity of the inner cup. Specifically, the silicon wafer is located at the center of the oblique cut surface of the inner cup. Turn on the rotation of the silicon wafer and control the rotation speed to 300 rpm. Spray 80 mL of developing solution onto the surface of each silicon wafer according to the spray volume. Spray the developing solution onto the center of the silicon wafer surface so that the developing solution covers the silicon wafer surface from the inside out.

[0066] S2-3. Stop spraying developer and move the developer nozzle back to its original position (HOME).

[0067] S3. Repeatedly rotate and let stand the silicon wafer coated with developer solution to complete the development of the silicon wafer surface, specifically:

[0068] During the development process, the silicon wafer is first rotated at 20 rpm for 2 seconds, then the rotation is stopped and it remains stationary for 8 seconds. This alternating rotation and resting process is repeated for a total of 45 seconds.

[0069] S4. After development is complete, stop the silicon wafer from rotating. Adjust the height of the inner cup of the developing device so that the silicon wafer and the plane above the inclined surface of the inner cup are at the same level. Start the rotation of the silicon wafer and control the rotation speed of the silicon wafer to 500 rpm for 2 seconds to remove impurities, including reaction products, from the surface of the silicon wafer.

[0070] In this embodiment, after removing impurities, including reaction products, from the silicon wafer surface, a secondary development process is performed on the silicon wafer surface, including the following steps:

[0071] S5-1. Stop the rotation of the silicon wafer, adjust the height of the inner cup of the developing device so that the silicon wafer and the plane above the inclined surface of the inner cup are at the same level, and move the developing solution nozzle of the developing device above the center position of the silicon wafer.

[0072] S5-2. Adjust the height of the inner cup of the developing device so that the silicon wafer is located inside the cavity of the inner cup. Specifically, the silicon wafer is located at the center of the oblique cut surface of the inner cup. Start the rotation of the silicon wafer and control the rotation speed of the silicon wafer to 20 rpm. Spray 80 mL of developing solution onto the surface of each silicon wafer according to the spray volume. Spray the developing solution onto the center of the silicon wafer surface so that the developing solution covers the silicon wafer surface from the inside out.

[0073] S5-3. Stop spraying developer and move the developer nozzle back to its original position (HOME).

[0074] S5-4. Repeatedly rotate and let stand the silicon wafer covered with developer solution to complete the secondary development of the silicon wafer surface, specifically:

[0075] During the development process, the silicon wafer is first rotated at a speed of 20 rpm for 2 seconds, then the rotation is stopped and the wafer is left to stand still for 8 seconds. This alternating rotation and resting process is repeated for a total of 45 seconds.

[0076] S5-5. After the silicon wafer stops rotating, adjust the height of the inner cup of the developing device so that the silicon wafer is located inside the cavity of the inner cup. Specifically, the silicon wafer is located at the center of the beveled surface of the inner cup. Move the deionized water nozzle of the developing device above the center of the silicon wafer, start the rotation of the silicon wafer, and control the speed to 1200 rpm. Rinse the silicon wafer with deionized water for 15 seconds. After completion, stop the water spray and the rotation of the silicon wafer, and move the deionized water nozzle back to its original position (HOME).

[0077] S5-6. Adjust the height of the inner cup of the developing device so that the silicon wafer and the plane above the inclined surface of the inner cup are at the same level. Start the rotation of the silicon wafer and control the speed to 2500 rpm to spin dry the silicon wafer for 15 seconds. Use centrifugal force to spin dry the moisture on the surface of the silicon wafer.

[0078] S5-7. Stop the silicon wafer from rotating at a rate of 2000 rpm / s.

[0079] After testing, such as Figure 4 As shown in this embodiment, after the control treatment, there are no residual substances in the open area on the silicon wafer surface, and the pattern loss is less. This shows that the control method of the present invention can effectively reduce the photolithography development defects on the silicon wafer surface and promote the development effect of the silicon wafer surface. At the same time, after the control method of the present invention, the yield of the effective die is increased by 5%-20%.

[0080] For ease of understanding, a schematic diagram of the developing apparatus is also provided in this invention, such as... Figure 5 As shown, and based on the control process of this developing apparatus, such as Figure 6 As shown, specifically:

[0081] (1) such as Figure 6 As shown in a, check the inner cup (such as...). Figure 5 The size of the cup in the image, and whether it is related to the current silicon wafer (e.g., ...). Figure 5 The inner cup (wafer) dimensions must match the silicon wafer diameter. Generally, the diameter above the beveled surface of the inner cup is equal to the silicon wafer diameter + 20mm, meaning the difference between the diameter above the beveled surface of the inner cup and the silicon wafer diameter is 20mm. When the diameter above the beveled surface of the inner cup is smaller than the silicon wafer diameter, the silicon wafer cannot be placed inside; when the inner cup is too large, the up-and-down oscillation of the silicon wafer during rotation causes the reactants to be thrown off and hit the upper edge of the inner cup (non-beveled surface), resulting in backsplashing.

[0082] (2) such as Figure 6As shown in b, the rotating suction cup (such as...) Figure 5 The Chuck rises, and the robotic arm places the silicon wafer onto a rotating suction cup. Through vacuum suction, the wafer is fixed to the rotating suction cup. Then, as... Figure 6 c. The rotating chuck descends, at which point the silicon wafer is at the same level as the plane above the beveled surface of the inner cup, and the periphery of the silicon wafer is placed on the substrate (e.g., Figure 5 (As shown above).

[0083] (3) such as Figure 6 As shown in diagram d, adjust the inner cup to rise to 1 / 2 the height of the beveled surface, i.e., the plane where the silicon wafer is located at the center of the beveled surface of the inner cup. Move the water spray arm to spray water above the center of the silicon wafer. At this time, the deionized water nozzle is located above the center of the silicon wafer (e.g., ...). Figure 6 e) Activate the rotary switch to make the rotating suction cup drive the silicon wafer to rotate. During the rotation, the centrifugal force is used to completely wet the surface of the silicon wafer with deionized water. After completion, the water spray arm is retracted and moved back to its original position (HOME).

[0084] (4) such as Figure 6 As shown in f, adjust the inner cup to descend so that the silicon wafer and the plane above the beveled surface of the inner cup are at the same level. Move the developing arm to above the center of the silicon wafer, i.e., above the developer nozzle (e.g., Figure 5 The H / SH Nozzle developer nozzle is located above the center of the silicon wafer (e.g., Figure 6 g).

[0085] (5) such as Figure 6 As shown in h, adjust the inner cup upwards so that the silicon wafer is located inside the cavity of the inner cup, specifically, so that the silicon wafer is located at the center of the beveled surface of the inner cup. Activate the rotary switch to cause the rotating suction cup to rotate the silicon wafer. During rotation, use the developer nozzle to spray developer onto the center of the silicon wafer surface (e.g., h). Figure 6 i) Using centrifugal force, the developer solution is spread from the inside out to cover the surface of the silicon wafer. The silicon wafer stops rotating. Then, the inner cup is adjusted to lower it so that the plane above the beveled surface of the inner cup is at the same level. The arm is then retracted, and the developer nozzle is moved back to its original position (HOME).

[0086] (6) For example Figure 6 As shown in j, adjust the inner cup to rise, and then repeatedly rotate and stand the silicon wafer with developer solution to complete the development of the silicon wafer surface.

[0087] (7) For example Figure 6 As shown in k, after development is complete, the silicon wafer stops rotating, the height of the inner cup is adjusted so that the silicon wafer and the plane above the inclined surface of the inner cup are at the same level, the rotation of the silicon wafer is started, and centrifugal force is used to remove impurities, including reaction products, from the surface of the silicon wafer.

[0088] (8) such asFigure 6 As shown in FIG. 1, after the developing, cleaning, impurity removing and other processes are completed, the silicon wafer stops rotating, and the rotating chuck rises to take away the silicon wafer.

[0089] According to the above results, the regulation method can effectively avoid the formation of defects on the surface of the silicon wafer, reduce the cleaning frequency of the equipment, improve the yield of effective dies, improve the production efficiency and reduce the cost, has high use value and good application prospect.

[0090] The above examples are only preferred embodiments of the present application, and the protection scope of the present application is not limited to the above examples. Any technical solution falling within the concept of the present application belongs to the protection scope of the present application. It should be pointed out that, for ordinary skilled persons in the art, improvements and refinements without departing from the principles of the present application should also be considered as the protection scope of the present application.

Claims

1. A conditioning method for reducing lithographic development defects, characterized by, The control method is to control the spin immersion developing process, comprising the following steps: S1, the developing surface of the semiconductor substrate is infiltrated and washed; S2, after the washing is completed, the rotation of the semiconductor substrate is stopped, the inner cup height of the developing device is adjusted, the semiconductor substrate is located inside the cavity of the inner cup, the rotation of the semiconductor substrate is started, and the developing solution is sprayed to the center position of the surface of the semiconductor substrate; S3, the semiconductor substrate with the developing solution is repeatedly rotated and placed alternately, and the developing of the surface of the semiconductor substrate is completed; S4, after the developing is completed, the rotation of the semiconductor substrate is stopped, the inner cup height of the developing device is adjusted, the semiconductor substrate and the plane above the bevel surface of the inner cup are at the same horizontal plane, the rotation of the semiconductor substrate is started, and the impurities including the reaction product on the surface of the semiconductor substrate are removed; Before the developing surface of the semiconductor substrate is infiltrated and washed, the following treatment is further included: The size of the inner cup of the developing device is adjusted, so that the difference between the diameter above the bevel surface of the inner cup and the diameter of the semiconductor substrate is ≤20mm; The semiconductor substrate is fixed on the rotating chuck of the developing device, and the developing surface faces upward; the semiconductor substrate includes one of a silicon wafer, an LED wafer, a liquid crystal display substrate, and a silicon nitride wafer.

2. The method of claim 1, wherein the method is performed to reduce defects in a lithographic development process. In S1, the following steps are included: S1-1, the inner cup height of the developing device is adjusted, the semiconductor substrate is located inside the cavity of the inner cup, and the deionized water nozzle of the developing device is moved above the center position of the semiconductor substrate; S1-2, the rotation of the semiconductor substrate is started, and the deionized water is sprayed to the surface of the semiconductor substrate to infiltrate the semiconductor substrate; S1-3, the water spraying and the rotation of the semiconductor substrate are stopped, and the deionized water nozzle is moved back to the original position; S1-4, the rotation of the semiconductor substrate is started, and the semiconductor substrate is washed to remove the deionized water on the surface of the semiconductor substrate.

3. The method of claim 2, wherein the method is performed in a lithography process. In S1-1, the inner cup height of the developing device is adjusted, and the semiconductor substrate is located at the plane where the center position of the bevel surface of the inner cup is located; In S1-2, the rotating speed of the semiconductor substrate is controlled to be 50rpm-1000rpm during the infiltration process; and the infiltration time is 3s-5s; In S1-4, the rotating speed of the semiconductor substrate is controlled to be 1000rpm-3000rpm during the washing process; and the washing time is 1s-3s.

4. The method for controlling photolithography development defects according to claim 1, characterized in that, In S2, the following steps are included: S2-1, after the washing is completed, the rotation of the semiconductor substrate is stopped, the inner cup height of the developing device is adjusted, the semiconductor substrate and the plane above the bevel surface of the inner cup are at the same horizontal plane, and the developing solution nozzle of the developing device is moved above the center position of the semiconductor substrate; S2-2, the inner cup height of the developing device is adjusted, the semiconductor substrate is located inside the cavity of the inner cup, the rotation of the semiconductor substrate is started, and the developing solution is sprayed to the center position of the surface of the semiconductor substrate, so that the developing solution spreads on the surface of the semiconductor substrate from inside to outside; S2-3, the developing solution is stopped, and the developing solution nozzle is moved back to the original position.

5. The method for controlling the reduction of photolithography development defects according to claim 4, characterized in that, In the S2-2, the inner cup height of the developing device is adjusted so that the semiconductor substrate is located at a plane where the center position of the bevel surface of the inner cup is located; the rotation speed of the semiconductor substrate is controlled to be less than or equal to 500 rpm during the rotation process; and the spraying amount of the developing solution is 60 mL to 100 mL per semiconductor substrate surface.

6. The method for controlling the reduction of photolithography development defects according to claim 1, characterized in that, In the S3, the semiconductor substrate covered with the developing solution is repeatedly rotated and rested alternately, and the time is 30 s to 50 s; the rotation speed of the semiconductor substrate is controlled to be 10 rpm to 30 rpm during the rotation process, and the time of a single rotation is less than or equal to 3 s; and the time of a single rest is 3 s to 10 s. In the S4, the rotation speed of the semiconductor substrate is controlled to be 100 rpm to 1500 rpm during the rotation process; and the time of the rotation is 2 s to 3 s.

7. The method for controlling the reduction of photolithography development defects according to claim 1, characterized in that, In the S4, after the impurities including the reaction product on the semiconductor substrate surface are removed, the semiconductor substrate surface is subjected to secondary development, which comprises the following steps: S5-1, the rotation of the semiconductor substrate is stopped, the inner cup height of the developing device is adjusted so that the semiconductor substrate is located at a same horizontal plane as the plane above the bevel surface of the inner cup, and the developing nozzle of the developing device is moved above the center position of the semiconductor substrate; S5-2, the inner cup height of the developing device is adjusted so that the semiconductor substrate is located inside the cavity of the inner cup, the rotation of the semiconductor substrate is started, and the developing solution is sprayed to the center position of the semiconductor substrate surface so that the developing solution covers the semiconductor substrate surface from inside to outside; S5-3, the spraying of the developing solution is stopped, and the developing nozzle is moved back to the original position; S5-4, the semiconductor substrate covered with the developing solution is repeatedly rotated and rested alternately to complete the secondary development of the semiconductor substrate surface.

8. The method of claim 7, wherein the method is performed in a lithography process. In the S5-2, the inner cup height of the developing device is adjusted so that the semiconductor substrate is located at a plane where the center position of the bevel surface of the inner cup is located; the rotation speed of the semiconductor substrate is controlled to be less than or equal to 30 rpm during the rotation process; and the spraying amount of the developing solution is 60 mL to 100 mL per semiconductor substrate surface; In the S5-4, the semiconductor substrate covered with the developing solution is repeatedly rotated and rested alternately, and the time is 10 s to 50 s; the rotation speed of the semiconductor substrate is controlled to be 10 rpm to 30 rpm during the rotation process, and the time of a single rotation is less than or equal to 3 s; and the time of a single rest is 3 s to 10 s.

9. The method for controlling the reduction of photolithography development defects according to claim 8, characterized in that, In the S5-4, after the secondary development of the semiconductor substrate surface is completed, the following treatment is further included: S5-5, the semiconductor substrate is subjected to water flushing at a rotation speed of 500 rpm to 2000 rpm for 10 s to 20 s; S5-6, the semiconductor substrate is subjected to spin-drying at a rotation speed of 2000 rpm to 3500 rpm for 10 s to 20 s; S5-7, the semiconductor substrate is stopped rotating according to a rotation speed reduction rate of 2000 rpm / s.

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