Leakage detection method of circuit and processing system thereof

Abstract

This application discloses a leakage current detection method and processing system for a circuit. The method includes obtaining multiple cross-domain connections based on a component connection table and power mode information; obtaining a check path based on the cross-domain connections and power mode information; determining whether the check path has leakage current risk, and outputting a detection result.

Description

Technical Field

[0001] A method and system for processing a circuit, particularly relating to a method and system for detecting leakage current in a circuit. Background Technology

[0002] Modern integrated circuit design employs functional partitioning, with each functional block having its own parameters such as frequency and operating voltage. Independent functional blocks are called power domains. Power domains without active configurations will be put into sleep mode or have their frequency reduced to decrease overall power consumption.

[0003] In general, when designing circuits in the power domain, it is necessary to add isolation cells between the two power domains to ensure that power domains in different operating states do not interfere with each other. If no isolation cell is placed between the two power domains, leakage current may be generated or false signals may be triggered. During the circuit design process, detecting the isolation cell requires a significant amount of computational resources. Summary of the Invention

[0004] In view of this, according to some embodiments, a leakage current detection method for a circuit is provided to detect whether there is a leakage current risk between the power domains of the circuit under a specific power mode. If a leakage current risk exists, a relevant warning about the leakage current risk is output to ensure that each power domain does not interfere with other power domains and to reduce the computational cost of circuit detection.

[0005] In some embodiments, the circuit leakage detection method includes obtaining multiple cross-domain connections based on a component connection table and power mode information. The power mode information includes multiple power modes, multiple power domains, and multiple domain states. Under each power mode, each power domain corresponds to a domain state. The domain state is either off or powered, and the power domains corresponding to the domain states are a powered-on domain and a powered-off domain. Each cross-domain connection is a circuit connection spanning two power domains. Based on the cross-domain connections and the power modes, multiple verification paths are obtained, and the connection domain state of each verification path is either a powered-on domain or a powered-off domain. It is determined whether there is a leakage risk between the verification path and the connected powered-on domain, and the detection result is output. This circuit leakage detection method does not require monitoring of input signals or the setting of separating components, thus shortening the overall detection simulation time.

[0006] In some embodiments, the power receiving domain includes a connection element connected to the check path. The step of determining whether the power receiving domain has a leakage risk includes: determining whether the endpoint to which the connection element is connected by the check path is the gate of a field-effect transistor; if the determination result is yes, the detection result is leakage; if the determination result is no, the detection result is no leakage.

[0007] In some embodiments, after the step of outputting the detection result, the method includes: switching the power domain and its domain state according to power mode information.

[0008] In some embodiments, the processing system for the leakage current detection method includes a storage element and a processor. The storage element stores the leakage current detection method, detection results, power mode information, and a component connection table; the processor executes the leakage current detection method.

[0009] In some embodiments, the power receiving domain includes a connection element connected to the verification path.

[0010] In some embodiments, the processor determines whether the endpoint connected to the verification path of the connecting element is the gate of a field-effect transistor; if the result is yes, the detection result is leakage; if the result is no, the detection result is no leakage.

[0011] In some embodiments, the circuit leakage detection method and processing system are used to detect whether there is a possibility of leakage between the power domains of the circuit under different power modes, and generate corresponding prompts so that circuit designers can add blocking components to the corresponding locations. The circuit leakage detection method of this application can be used not only as standalone software, but also as plug-in kits or other means to integrate with existing circuit software. Attached Figure Description

[0012] Figure 1 This is a schematic diagram of the system architecture of one embodiment.

[0013] Figure 2 This is a schematic diagram of the power domains, cross-domain links, and verification paths in one embodiment.

[0014] Figure 3 This is a schematic diagram of power mode information in one embodiment.

[0015] Figure 4 This is a schematic diagram of the circuit detection operation process of one embodiment.

[0016] Figure 5A This is a schematic diagram of the cross-domain connection between a first power domain and a second power domain according to one embodiment.

[0017] Figure 5B This is a schematic diagram of the verification path between the first power domain and the second power domain in one embodiment.

[0018] Figure 6 This is a schematic diagram of the operation process of leakage current detection according to one embodiment.

[0019] Figure 7A This is a schematic diagram of the domain state, cross-domain connection, and verification path of the first power domain in one embodiment.

[0020] Figure 7B This is a schematic diagram of the domain state, cross-domain connection, and verification path of the second power domain in one embodiment.

[0021] Figure 7C This is a schematic diagram of the domain state of the second power domain, another cross-domain connection, and another verification path in one embodiment.

[0022] Figure 8A This is a schematic diagram of the domain state, cross-domain connection, and verification path of the first power domain in one embodiment.

[0023] Figure 8B This is a schematic diagram of the domain state, cross-domain connection, and verification path of the second power domain in one embodiment.

[0024] Figure 8C This is a schematic diagram of the domain state, cross-domain connection, and verification path of a third power domain in one embodiment.

[0025] Symbol Explanation

[0026] 100: Leakage Current Detection System

[0027] 110: Storage element

[0028] 111: Circuit Testing Program

[0029] 112: Test Results

[0030] 113: Component Wiring Table

[0031] 114: Power Mode Information

[0032] 120: Processor

[0033] 211, 511, 711, 811: First power domain

[0034] 221, 521, 721, 821: Second power domain

[0035] 231, 831: Third power domain

[0036] 214, 515, A, B, C, D: Cross-domain connections

[0037] 215, 516, A`, B`, C`, D`: Verification path

[0038] 251, 252, 253: Interface pins

[0039] 513: First interface pin

[0040] 514: Second interface pin

[0041] 517: The First Field-Effect Transistor

[0042] 518: Second Field-Effect Transistor

[0043] 519: Third Field-Effect Transistor

[0044] S410~S442, S610~640: Steps

[0045] LV, rstb12, C`, D`: Pins Detailed Implementation

[0046] Please refer to Figure 1 The diagram shown is a schematic of the system architecture for one embodiment. In some embodiments, the circuit leakage detection system 100 includes a storage element 110 and a processor 120. The processor 120 is electrically coupled to the storage element 110. The storage element 110 stores a circuit detection program 111, a detection result 112, a netlist of component connections 113, and power mode information 114.

[0047] Component connection table 113 includes multiple electronic components (unnumbered, please see [reference]). Figure 5A 5B Figure 7A , Figure 7B , Figure 7C , Figure 8A , Figure 8B Examples), circuit structures (unlabeled, please see...) Figure 5A , Figure 5B , Figure 7A , Figure 7B , Figure 7C , Figure 8A , Figure 8B Examples, interface pins, or power domains, etc., please refer to... Figure 2 As shown. Figure 2 The component connection table 113 is represented graphically; in reality, the component connection table 113 can be a datasheet or a text file. Each power domain contains several interface pins (251, 252, 253), several electronic components (unlabeled), and circuit structures (unlabeled). Figure 2The squares in the diagram represent the power domains of component connection table 113, namely the first power domain 211, the second power domain 221, and the third power domain 231. The first power domain 211 has several interface pins 251, the second power domain 221 has several interface pins 252, and the third power domain 231 has several interface pins 253. The interface pins (251, 252, 253) are used to set the domain state of each power domain (211, 221, 231). The circuit structure is a combination of electronic components (including the layout of electronic components or the coupling combination of electronic components).

[0048] There is at least one cross-domain connection between the two power domains 214. Figure 2 The cross-domain connections 214 of each power domain are selected by dashed elliptical boxes with short spacing. Besides being circuits coupled between two power domains, the cross-domain connection 214 can also be composed of multiple electronic components. During leakage current detection, the processor 120 detects each group of cross-domain connections 214. The cross-domain connections 214 selected and detected by the processor 120 are called check paths 215. Figure 2 The cross-domain connection 214 circled by the long-spaced dashed box is the verification path 215. All other icons below represent verification paths 215 in the same way.

[0049] Power mode information 114 includes multiple power modes, multiple power domains, and various domain states. Please refer to [link / reference]. Figure 3 The power mode is used to record the current domain state of each power domain. Under the same power mode, each power domain has its own corresponding domain state. Domain states include off or powered. The processor 120 switches power modes to change each power domain to its corresponding domain state.

[0050] When a power domain is in a power-down state, it is not receiving power. The power received state includes not only the power during normal operation but also various other operating states. In some embodiments, the power received state may be, for example, low power mode, deep sleep mode, or power-on mode. For clarity, power domains with different power states are further divided into power-receiving domains and power-off domains. The power-receiving domain is the power domain in the power-receiving state, and the power-off domain is the power domain in the power-off state.

[0051] Processor 120 executes circuit detection program 111. Circuit detection program 111 is a computer program that implements a leakage current detection method. The leakage current detection method is used to detect whether there is a risk of leakage current between any two power domains in the aforementioned component connection table 113. Circuit detection program 111 can be implemented as software using a computer programming language, or it can be combined with existing circuit design software as a plug-in program. Circuit detection program 111 switches each power domain to a different domain state according to power mode information 114, and detects whether there is a risk of leakage current in each check path 215 of cross-domain connection 214. To clearly illustrate the operation of this embodiment, please refer to... Figure 4 The diagram shown illustrates a leakage current detection process for a circuit according to one embodiment. The leakage current detection method for the circuit includes the following steps:

[0052] Step S410: Obtain multiple cross-domain connections based on the component wiring table and power mode information;

[0053] Step S420: Based on the cross-domain connection and one of the power modes, obtain multiple verification paths, where the connection domain status of each verification path is either a power-on domain or a power-off domain.

[0054] Step S430: Determine whether there is a risk of leakage current in the verification path and the connected power supply area, and output the detection results;

[0055] Step S441: If the verification path has a risk of leakage, output the detection result as leakage; and

[0056] Step S442: If the verification path has no risk of leakage, the output detection result is "no leakage".

[0057] First, the circuit testing program 111 loads the component connection table 113 from the storage component 110. The circuit testing program 111 then obtains at least two power domains based on the component connection table 113. In this embodiment, two power domains are used as an example, namely the first power domain 511 and the second power domain 521, as follows: Figure 5A As shown. The first power domain 511 has several electronic components and a first interface pin 513. Figure 5A and Figure 5B Only some of the components connected to the first power domain 511 and the second power domain 521 are shown; other electronic components that are not directly connected are not listed one by one.

[0058] The second power domain 521 has several electronic components and a second interface pin 514. Similarly, although only the electronic components connected to the cross-domain connection are drawn in the second power domain 521, it is not actually limited to these electronic components. There is a cross-domain connection 515 between the first power domain 511 and the second power domain 521. To distinguish the electronic components connected to the check path from other electronic components in each power domain, the electronic components directly connected to the check path are called connection elements.

[0059] Next, the circuit detection program 111 loads the power mode information 114. The circuit detection program 111 sets the domain state of the first power domain 511 through the first interface pin 513, and sets the domain state of the second power domain 521 through the second interface pin 514. Please refer to... Figure 5B As shown, the first power domain 511 is the power-off domain, and the second power domain 521 is the power-receiving domain. Assuming that the first power domain 511 and the second power domain 521 share only one cross-domain connection 515, the cross-domain connection 515 is also the verification path 516. Verification path 516 can be found in [reference needed]. Figure 5B The dashed area in the text. As mentioned earlier, Figure 5A The first field-effect transistor 517 and the second field-effect transistor 518 in the verification path are the connecting elements.

[0060] In one embodiment, the circuit detection program 111 determines whether there is a leakage risk in the verification path 516 based on the domain states of the two power domains 511 and 521. If the domain states of the two power domains 511 and 521 connected to the verification path 516 are the same, the circuit detection program 111 can directly determine that there is no leakage risk in the verification path 516. Therefore, the circuit detection program 111 outputs a detection result 112 indicating no leakage. If the first power domain 511 is a power-off domain and the second power domain 521 is a power-receiving domain, the circuit detection program 111 determines that there is a leakage risk in the verification path 516.

[0061] In one embodiment, the circuit detection program 111 uses the check path and connecting components as the basis for determining whether there is a risk of leakage. The circuit detection program 111 determines whether there is a risk of leakage in the check path 516 according to the following steps, and simultaneously cooperates with... Figure 6 As shown.

[0062] Step S610: Determine whether the connecting element on the verification path is a field-effect transistor;

[0063] Step S620: Determine whether the endpoint connected by the checked path of the connecting element is the gate of a field-effect transistor;

[0064] Step S630: If the gate of the field-effect transistor is connected to the check path, the detection result is leakage current; and

[0065] Step S640: If the gate of the field-effect transistor is not connected to the check path,

[0066] The test results showed no leakage.

[0067] Here it remains Figure 5A and Figure 5B For example, the first power domain 511 includes at least one first field-effect transistor 517 (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET). The second power domain 521 includes a second field-effect transistor 518 and a third field-effect transistor 519. Please refer to... Figure 5A As shown. The gate of the second field-effect transistor 518 is connected to the gate of the third field-effect transistor 519, and the source of the second field-effect transistor 518 is connected to the drain of the third field-effect transistor 519. One end of the verification path 516 is connected to the source of the first field-effect transistor 517, and the other end of the verification path 516 is connected to the gate of the second field-effect transistor 518, as shown. Figure 5A As shown.

[0068] Circuit detection program 111 traverses and checks whether a field-effect transistor (FET) exists in check path 516. If an FET exists in check path 516, circuit detection program 111 further determines whether the gate of the FET is connected to check path 516. If the gate of the FET is connected to check path 516, circuit detection program 111 outputs detection result 112 as leakage. If the connected element is not an FET, circuit detection program 111 outputs detection result 112 as no leakage. If the connected element is an FET, but the gate of the FET is not connected to check path 516, circuit detection program 111 also outputs detection result 112 as no leakage.

[0069] In some embodiments, the circuit detection program 111 determines whether there is a leakage risk based on the power domain and domain state to which the gate of the field-effect transistor is connected. First, the circuit detection program 111 determines whether the field-effect transistor exists on the check path 516. If the field-effect transistor exists in the check path 516, the circuit detection program 111 determines the domain state of the second power domain 521 to which the gate of the field-effect transistor is connected. If the domain state of the second power domain 521 is energized, the circuit detection program 111 determines that there is a leakage risk in the check path 516, and the circuit detection program 111 outputs the leakage detection result 112.

[0070] Figure 7A , Figure 7B , Figure 8A , Figure 8B and Figure 8C Table 113 represents the wiring of different components and their respective power domains. Figure 7A , Figure 7B It has two power domains 711 and 721, which are the first power domain 711 and the second power domain 721 respectively. Figure 7A For the first power domain 711, Figure 7B This is the second power domain 721. To facilitate the explanation of cross-domain connections between power domains, therefore, according to... Figure 7A , Figure 7B , Figure 8A , Figure 8B and Figure 8C The pin names of each electronic component serve as the names of the corresponding cross-domain links and lookup paths. For example, cross-domain link A means the circuit between pin A of the first power domain 711 and pin A of the second power domain 721 (e.g., ...). Figure 7A and Figure 7B (As shown). Cross-domain connection C means the circuit between the check path C' of the second power domain 821 and the check path C' of the third power domain 831 (e.g. Figure 8A , Figure 8B and Figure 8C (As shown).

[0071] The first power domain 711 has two cross-domain connections connected to the second power domain 721, namely cross-domain connection A and cross-domain connection B. The circuit detection program 111 sets the domain state of the first power domain 711 to off mode according to the power mode information 114, thus setting the first power domain 711 as a power-off domain. Meanwhile, the circuit detection program 111 sets the domain state of the second power domain 721 to low mode, thus setting the second power domain 721 as a power-receiving domain.

[0072] Assume that circuit testing program 111 initially selects cross-domain link A as the verification path A', but this order is not limited to this. Circuit testing program 111 can determine the selection order of verification paths A' and B' based on other factors, such as the number of electronic components or the results of static circuit analysis. Figure 7A , Figure 7B and Figure 7CIt can be seen that there are several electronic components along the path of check path A', including operational amplifiers and field-effect transistors. Assume that check path A' in the second power domain 721 contains three field-effect transistors, and the gate of the field-effect transistor under test (selected by the dashed coil) is connected to the output of the operational amplifier in the first power domain 711. Since the domain states of the first power domain 711 and the second power domain 721 are different, the circuit detection program 111 will determine that check path A' has a leakage risk. After completing check path A', the circuit detection program 111 will output a detection result 112 indicating a leakage risk.

[0073] Next, the circuit detection program 111 selects the cross-domain link B and checks whether there is a risk of leakage in path B'. Figure 7C As shown. Circuit detection program 111 outputs detection result 112 based on the check path B', the domain state of the first power domain 711, and the domain state of the second power domain 721. Since the domain state of the first power domain 711 is different from the domain state of the second power domain 721, circuit detection program 111 determines that check path B' has a leakage risk, and therefore outputs detection result 112 indicating a leakage risk. For Figure 7B or Figure 7C Other verification paths and their associated field-effect transistors can all be used to detect the aforementioned leakage risks.

[0074] Figure 8A , Figure 8B and Figure 8C These represent the three power domains 811, 821, and 831, respectively. Figure 8A For the first power domain 811, Figure 8B For the second power domain 821, Figure 8C The third power domain is 831. The circuit detection program 111 sets the domain states of each power domain 811, 821, and 831 according to the power mode information 114 as follows: the domain states of the first power domain 811 and the second power domain 821 are both in off mode, and the domain state of the third power domain 831 is in normal mode. The third power domain 831 is coupled to both the first power domain 811 and the second power domain 821. The LV and rstb 12 pins of the first power domain 811 are connected to the corresponding pins of the third power domain 831. Similarly, the LV, C', and D' pins of the second power domain 821 are connected to the corresponding pins of the third power domain 831.

[0075] Taking a cross-domain connection C as an example, the circuit detection program 111 selects the cross-domain connection C, uses pin C' as the verification path C', and detects the leakage risk of the verification path C'. The verification path C' in the second power domain 821 is connected to the output of the inverter, and the other end of the verification path C' is connected to the field-effect transistor in the third power domain 831. The circuit detection program 111 checks the connection pin between the verification path C' and the field-effect transistor. Since the verification path C' is connected to the gate of the field-effect transistor, and the domain state of the third power domain 831 is energized, the circuit detection program 111 determines that the verification path C' has a leakage risk, and the circuit detection program 111 generates a detection result 112 indicating a leakage risk.

[0076] Next, the circuit testing program 111 continues to test other cross-domain connections between the second power domain 821 and the third power domain 831 until all cross-domain connections are completed. For example, cross-domain connection D and check path D'. The circuit testing program 111 will switch between checking leakage current between the first power domain 811 and the second power domain 821, or between the first power domain 811 and the third power domain 831.

[0077] In some embodiments, the circuit leakage detection method and processing system are used to detect whether leakage risk will occur between power domains under a specific power mode, and generate corresponding location prompts so that circuit designers can add blocking components to the corresponding locations. The circuit leakage detection system 100 of this application can be used as standalone software or integrated with existing circuit software via plug-in kits. During the detection process, the circuit detection program 111 does not need to additionally calculate the input signals of each electronic component, thus reducing the computational cost of the inspection and improving inspection efficiency.

Claims

1. A method for detecting a leakage current of a circuit, characterized by, The method comprises: obtaining a plurality of cross-domain connections according to a component connection table and power mode information, wherein the power mode information comprises a plurality of power modes, a plurality of power domains, and a plurality of domain states; each power domain corresponds to one of the domain states in each power mode; the domain state is either a shutdown or a power-on, and the power domain corresponding to the domain state is either a power-on power domain or a power-off power domain; each cross-domain connection is a circuit connection across two power domains; obtaining a plurality of check paths according to the cross-domain connections and one of the power modes, wherein the domain state of each check path is either the power-on power domain or the power-off power domain; and determining whether the check path and the connected power-on power domain have a risk of electric leakage, and outputting a detection result.

2. The electric leakage detection method of the circuit according to claim 1, wherein, The power-on is a low-power state, a sleep state, or a normal state.

3. The electric leakage detection method of the circuit according to claim 1, wherein, The power-on power domain comprises a connection component connected to the check path, and the step of determining whether the power-on power domain has a risk of electric leakage comprises: determining whether an end point of the connection component connected by the check path is a gate of a field effect transistor; if the determination result is yes, the detection result is electric leakage; if the determination result is no, the detection result is no electric leakage. The method further comprises, after the step of outputting the detection result: switching the power domains and the corresponding domain states according to the power mode information.

4. The electric leakage detecting method of claim 1, wherein, 5. The electric leakage detection method of claim 4, wherein whether the switched power domains and the corresponding check paths have a risk of electric leakage is detected. The method comprises:

6. A processing system applying the electric leakage detection method of claim 1, characterized by, a storage component configured to store the electric leakage detection method, the detection result, the power mode information, and the component connection table; and a processor configured to execute the electric leakage detection method. The power-on power domain comprises a connection component connected to the check path. The processor determines whether an end point of the connection component connected by the check path is a gate of a field effect transistor; 7. The processing system of the electric leakage detection method according to claim 6, wherein if the determination result is yes, the detection result is electric leakage; 8. The processing system of the electric leakage detection method according to claim 7, wherein if the determination result is no, the detection result is no electric leakage. ​ ​

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