Strain-compensated AlGaInP red light semiconductor laser and preparation method thereof

Abstract

The application relates to a strain-compensated AlGaInP red light semiconductor laser and a preparation method thereof. 0.5 In 0.5 P lower transition layer, Al 0.5 In 0.5 P lower confinement layer, (Al x1 Ga 1‑x1 ) y1 In 1‑y1 P lower waveguide layer, (Al a1 Ga 1‑a1 ) b1 In 1‑b1 P / (Al a2 Ga 1‑a2 ) b2 In 1‑b2 P strain-compensated barrier layer, Ga 1‑x2 In x2 P quantum well, (Al a3 Ga 1‑a3 ) b3 In 1‑b3 P / (Al a4 Ga 1‑a4 ) b4 In 1‑b4 P strain-compensated barrier layer, (Al x3 Ga 1‑x3 ) y2 In 1‑y2 P upper waveguide layer, Al 0.5 In 0.5 P upper confinement layer, (Al 0.5 Ga 0.5 ) 0.5 In 0.5 P first upper transition layer, Ga 0.5 In 0.5 P second upper transition layer and a GaAs cap layer. The application provides the laser which reduces the lattice constant difference of well-barrier interface by inserting a thin strain buffer layer or a strain gradient structure, improves wavelength uniformity, is beneficial to guarantee consistency, improves yield, and reduces cost.

Description

Technical Field

[0001] This invention relates to a strain-compensated AlGaInP red semiconductor laser and its fabrication method, belonging to the field of optoelectronic technology. Background Technology

[0002] AlGaInP red semiconductor lasers are characterized by their small size, light weight, low power consumption, direct modulation, high efficiency, and high reliability. They have broad application prospects in short-range all-optical networks using plastic fiber transmission, as well as in medical aesthetics, laser displays, and industrial measurement. Laser displays, in particular, can cover 90% of the color gamut of the visible light spectrum, with color saturation more than 100 times that of traditional display devices, and are hailed as a "revolution in the history of human vision," possessing extremely high market potential and application value.

[0003] The human eye responds differently to red light of different wavelengths, resulting in varying optical performance and perceived brightness. The literature "Advances in Lasers and Optoelectronics," Vol 56(18), 2019, Pg 180001:1–12, points out that 638nm red light combines a wide color gamut coverage with high optical performance, exhibiting the best overall performance. Short-wavelength 638nm red lasers generally use tensile-strained GaInP quantum wells. The quantum well is subjected to biaxial tensile strain in the parallel direction and compressive strain in the perpendicular direction, which increases the light hole band and decreases the heavy hole band, reducing its effective mass. This results in a high-gain TM polarized laser. However, the magnitude of the quantum well stress affects the separation of light and heavy holes, thus influencing the output wavelength. For a better visual experience, it is necessary to ensure the consistency of laser brightness, which fundamentally requires ensuring the wavelength consistency of the epitaxial wafer. This is beneficial for increasing yield, reducing costs, and enhancing market competitiveness.

[0004] The IEEE journal of selected topics in quantum electronics, Vol 3(2), 1997, Pg 180–187 points out that strain compensation can improve the crystal quality of materials and avoid the decrease in reliability caused by critical thickness mismatch. However, the large change in lattice constant at the strain compensation interface between the barrier layer and the well can easily lead to defects, and the non-uniform stress can cause poor wavelength uniformity.

[0005] Chinese patent document CN106229398A discloses a highly uniform epitaxial structure for red LEDs and its fabrication method. By growing an AlGaAs buffer layer before growing a GaAs buffer layer, the surface oxide layer is decomposed and absorbed through the AlGaAs buffer layer, minimizing the impact of the substrate surface oxide layer on the subsequent epitaxial structure and thus improving growth uniformity. However, when applied to LED structures, this method reduces the area of ​​the epitaxial wafer edge below 40 mcd. While uniformity is typically easily optimized with multiple quantum wells, red 638nm semiconductor lasers usually employ a single quantum well structure to improve photoelectric conversion efficiency; the two have different structural designs. Summary of the Invention

[0006] To address the shortcomings of existing technologies, this invention provides a strain-compensated AlGaInP red semiconductor laser and its fabrication method.

[0007] The technical solution of the present invention is as follows:

[0008] A strain-compensated AlGaInP red semiconductor laser, comprising, from bottom to top, a GaAs substrate, a GaAs buffer layer, and a GaAs layer. 0.5 In 0.5 P-transition layer, Al 0.5 In 0.5 P-lower confinement layer, (Al) x1 Ga 1-x1 ) y1 In 1-y1 P-waveguide layer, (Al) a1 Ga 1-a1 ) b1 In 1-b1 P / (Al a2 Ga 1-a2 ) b2 In 1-b2 P-strain compensation barrier, Ga 1-x2 In x2 p-quantum well, (Al) a3 Ga 1-a3 ) b3 In 1-b3 P / (Al a4 Ga 1-a4 ) b4 In 1-b4 P-strain compensation barrier, (Al) x3 Ga 1-x3 ) y2 In 1-y2 P upper waveguide layer, Al 0.5 In 0.5 P upper confinement layer, (Al) 0.5 Ga 0.5 ) 0.5In 0.5 P first upper transition layer, Ga 0.5 In 0.5 P second upper transition layer and GaAs cap layer;

[0009] Where a2≤a1≤x1, a3≤a4≤x3, 0.5≥b2≥b1≥0.3, 0.5≥b3≥b4≥0.3, (Al) a1 Ga 1-a1 ) b1 In 1-b1 P and (Al) a4 Ga 1-a4 ) b4 In 1-b4 With an In content greater than or equal to 0.5 in P, compressive strain compensation helps improve the quality of the active material and increase conversion efficiency.

[0010] According to a preferred embodiment of the present invention, the substrate is a GaAs substrate.

[0011] According to a preferred embodiment of the present invention, the GaAs buffer layer is a GaAs material doped with silicon atoms, the doping source is Si2H6, the thickness is 0.1-0.3 μm, and the doping concentration is 2×10⁻⁶. 18 -5×10 18 atoms / cm 3 Preferably, the buffer layer has a thickness of 0.2 μm and a silicon atom doping concentration of 2 × 10⁻⁶. 18 atoms / cm 3 .

[0012] According to a preferred embodiment of the present invention, the Ga 0.5 In 0.5 The lower transition layer under P is doped with silicon atoms, with Si2H6 as the dopant source, a thickness of 0.1-0.3 μm, and a doping concentration of 2 × 10⁻⁶. 18 -5×10 18 atoms / cm 3 Preferably, the Ga 0.5 In 0.5 The thickness of the transition layer under P is 0.2 μm; the doping concentration is 4 × 10⁻⁶. 18 atoms / cm 3 .

[0013] According to a preferred embodiment of the present invention, the Al 0.5 In 0.5 The lower confinement layer of P is of type n Al. 0.5 In 0.5 The lower confinement layer (P-layer) is doped with silicon atoms, with Si₂H₆ as the dopant source, a thickness of 0.7-1.5 μm, and a doping concentration of 7 × 10⁻⁶. 17 -2×10 18 atoms / cm3 Preferably, the Al 0.5 In 0.5 The thickness of the P-confinement layer is 1.2 μm; the doping concentration is 1 × 10⁻⁶. 18 atoms / cm 3 .

[0014] According to a preferred embodiment of the present invention, the (Al) x1 Ga 1-x1 ) y1 In 1-y1 The thickness of the lower waveguide layer is 0.1-0.3 μm, with the last two-thirds of the layer doped with Si₂H₆ at a doping concentration of 1 × 10⁻⁶. 16 -3×10 17 atoms / cm 3 0.45≤x1≤0.65, 0.4≤y1≤0.6. Preferably, the (Al) x1 Ga 1-x1 ) y1 In 1-y1 The thickness of the P-waveguide layer is 0.2 μm, with a doping concentration of 5 × 10⁻⁶ at 120 nm. 16 atoms / cm 3 x1 = 0.55, y1 = 0.5. Cooling and adjusting V / III within the waveguide layer allows for the switching of optimal growth processes between AlInP and GaInP.

[0015] According to a preferred embodiment of the present invention, the (Al) a1 Ga 1-a1 ) b1 In 1-b1 P / (Al a2 Ga 1-a2 ) b2 In 1-b2 In the P strain compensation barrier layer (Al) a1 Ga 1-a1 ) b1 In 1-b1 The thickness of P is 4-7 nm, (Al a2 Ga 1-a2 ) b2 In 1-b2 The thickness of P is 1-3 nm, unintentionally doped, with 0.45 ≤ a1 ≤ 0.65, 0.3 ≤ b1 ≤ 0.5; 0.45 ≤ a2 ≤ 0.65, 0.4 ≤ b2 ≤ 0.5. Preferably, the (Al) a1 Ga 1-a1 ) b1 In 1-b1 The thickness of P is 6 nm, a1 = 0.5, b1 = 0.4, and its lattice constant is greater than that of the GaAs substrate. It is subjected to compressive strain to compensate for the tensile strain in the quantum well. The (Al)a2 Ga 1-a2 ) b2 In 1-b2 The thickness of P is 2nm, a2=0.4, b2=0.5, and the lattice constant is the same as that of the GaAs substrate. It plays a strain buffering role in the compressive strain barrier layer and tensile strain quantum well, reducing the generation of interface dislocations and defects caused by lattice abrupt changes. At the same time, it optimizes stress and reduces the poor wavelength uniformity caused by stress inhomogeneity.

[0016] According to a preferred embodiment of the present invention, the Ga 1-x2 In x2 The thickness of the first quantum well (P) is 8-15 nm, unintentionally doped, with a molecular weight of 0.3 ≤ x² ≤ 0.45, and subjected to tensile strain. Preferably, the Ga... 1-x2 In x2 The thickness of the first quantum well is 10 nm, and x2 = 0.4.

[0017] According to a preferred embodiment of the present invention, the (Al) a3 Ga 1-a3 ) b3 In 1-b3 P / (Al a4 Ga 1-a4 ) b4 In 1-b4 In the P strain compensation barrier layer (Al) a3 Ga 1-a3 ) b3 In 1-b3 The thickness of P is 1-3 nm, (Al a4 Ga 1-a4 ) b4 In 1-b4 The thickness of P is 4-7 nm, unintentionally doped, with the following properties: 0.45 ≤ a3 ≤ 0.65, 0.4 ≤ b3 ≤ 0.5, 0.45 ≤ a4 ≤ 0.65, 0.3 ≤ b4 ≤ 0.5. Preferably, the (Al) a3 Ga 1-a3 ) b3 In 1-b3 The thickness of P is 2 nm, a3 = 0.4, b3 = 0.5, and its lattice constant is the same as that of the GaAs substrate. It acts as a strain buffer in the compressive strain barrier layer and tensile strain quantum well, reducing the generation of interface dislocations and defects caused by lattice abrupt changes; the (Al) a4 Ga 1-a4 ) b4 In 1-b4 The thickness of P is 6 nm, a4 = 0.5, b4 = 0.4, and the lattice constant is greater than that of the GaAs substrate. It is subjected to compressive strain to compensate for the tensile strain in the quantum well.

[0018] According to a preferred embodiment of the present invention, the (Al) x3 Ga1-x3 ) y2 In 1-y2 The thickness of the waveguide layer on P is 0.05-0.15 μm. The last 1 / 3 of the thickness of the upper confinement layer is doped with magnesium or zinc atoms. The doping source is Cp₂Mg or DEZn, and the doping concentration is 2 × 10⁻⁶. 17 -5×10 17 atoms / cm 3 0.45≤x3≤0.65, 0.4≤y2≤0.6. Preferably, the (Al) x3 Ga 1-x3 ) y2 In 1-y2 The thickness of the waveguide layer on P is 0.1 μm, with a doping concentration of 4 × 10⁻⁶ at 35 nm. 17 atoms / cm 3 x3 = 0.55, y2 = 0.5.

[0019] According to a preferred embodiment of the present invention, the Al 0.5 In 0.5 The upper confinement layer of P is of type P Al. 0.5 In 0.5 The P-type confinement layer is doped with magnesium or zinc atoms from Cp₂Mg or DEZn sources, with a thickness of 0.8-1.2 μm and a doping concentration of 7 × 10⁻⁶. 17 -1.5×10 18 atoms / cm 3 Preferably, the Al 0.5 In 0.5 The thickness of the confinement layer on P is 0.9 μm, the doping source is Cp₂Mg, and the doping concentration is 1 × 10⁻⁶. 18 atoms / cm 3 .

[0020] According to a preferred embodiment of the present invention, the (Al) 0.5 Ga 0.5 ) 0.5 In 0.5 The first upper transition layer of P is doped with magnesium or zinc atoms, with the doping source being Cp₂Mg or DEZn, and the thickness is 8-15 nm with a doping concentration of 1.5 × 10⁻⁶. 18 -3×10 18 atoms / cm 3 Preferably, the (Al) 0.5 Ga 0.5 ) 0.5 In 0.5 The thickness of the first upper transition layer is 10 nm, the doping source is Cp₂Mg, and the doping concentration is 2 × 10⁻⁶. 18 atoms / cm 3 .

[0021] According to a preferred embodiment of the present invention, the Ga 0.5 In 0.5 The second upper transition layer of P is doped with magnesium or zinc atoms, with the doping source being Cp₂Mg or DEZn, and the thickness is 8-15 nm with a doping concentration of 1.5 × 10⁻⁶. 18 -3×10 18 atoms / cm 3 Preferably, the Ga 0.5 In 0.5 The thickness of the second upper transition layer is 10 nm, the doping source is Cp₂Mg, and the doping concentration is 2 × 10⁻⁶. 18 atoms / cm 3 .

[0022] According to a preferred embodiment of the present invention, the GaAs cap layer is a carbon-doped GaAs material, with the doping source being CBr4 or DEZn, a thickness of 0.1-0.5 μm, and a doping concentration of 4 × 10⁻⁶. 19 -1×10 20 atoms / cm 3 Preferably, the GaAs cap layer has a thickness of 0.2 μm and a doping concentration of 7 × 10⁻⁶. 19 atoms / cm 3 .

[0023] The fabrication method of the strain-compensated AlGaInP red semiconductor laser includes the following steps:

[0024] The substrate underwent surface heat treatment in the MOCVD growth chamber, followed by epitaxial growth of a GaAs substrate, a GaAs buffer layer, and a GaAs layer from bottom to top. 0.5 In 0.5 P-transition layer, Al 0.5 In 0.5 P-lower confinement layer, (Al) x1 Ga 1-x1 ) y1 In 1-y1 P-waveguide layer, (Al) a1 Ga 1-a1 ) b1 In 1-b1 P / (Al a2 Ga 1-a2 ) b2 In 1-b2 P-strain compensation barrier, Ga 1-x2 In x2 p-quantum well, (Al) a3 Ga 1-a3 ) b3 In 1-b3 P / (Al a4 Ga 1-a4 )b4 In 1-b4 P-strain compensation barrier, (Al) x3 Ga 1-x3 ) y2 In 1-y2 P upper waveguide layer, Al 0.5 In 0.5 P upper confinement layer, (Al) 0.5 Ga 0.5 ) 0.5 In 0.5 P first upper transition layer, Ga 0.5 In 0.5 A strain-compensated AlGaInP red semiconductor laser is obtained by adding a second upper transition layer and a GaAs cap layer.

[0025] According to a preferred embodiment of the present invention, the method for fabricating the strain-compensated AlGaInP red semiconductor laser includes the following steps:

[0026] (1) Place the GaAs substrate in the growth chamber of the MOCVD equipment and bake it at 710-730℃ for 20-40 minutes in H2 environment. Then introduce AsH3 and bake for 20-40 minutes to obtain the heat-treated GaAs substrate. Perform high-temperature heat treatment on the GaAs substrate to remove water and oxygen on the substrate surface and prepare for step (2).

[0027] (2) Reduce the temperature to 670-690℃, with a cooling rate not exceeding 30℃ / min, and introduce TMGa and AsH3 to grow a GaAs buffer layer on the GaAs substrate; the purpose is to prevent defects from spreading from the substrate into the confinement layer, provide a fresh growth interface, and improve the material growth quality.

[0028] (3) Keep the temperature at 670-690℃, introduce TMGa and AsH3, and stop introducing AsH3 and TMGa during the growth process on the GaAs buffer layer to achieve growth pause. The pause time is 3s-30s to exhaust the As atoms in the reaction chamber.

[0029] (4) Maintain the temperature at 670-690℃ and continue to introduce TMGa, TMIn, and PH3 to grow Ga on the GaAs buffer layer. 0.5 In 0.5 P-level transition layer;

[0030] (5) Raise the temperature to 690-710℃, with a heating rate not exceeding 60℃ / min, and introduce TMAl, TMIn, TMGa and PH3. 0.5 In 0.5 n-type Al grows on the lower transition layer of P. 0.5 In 0.5 P-level confinement layer;

[0031] (6) Lower the temperature to 640-660℃, introduce TMAl, TMIn, TMGa and PH3, and in n-type Al 0.5 In 0.5 Growth on the P-limiting layer (Al) x1 Ga 1-x1 ) y1 In 1-y1 P-below waveguide layer;

[0032] (7) Maintain the temperature at 640-660℃ and continue to introduce TMAl, TMIn, TMGa and PH3, in (Al x1 Ga 1-x1 ) y1 In 1- y1 (Al) grown on the lower waveguide layer of P a1 Ga 1-a1 ) b1 In 1-b1 P / (Al a2 Ga 1-a2 ) b2 In 1-b2 The P-strain compensation barrier layer, by changing the flow rates of TMAl and TMGa while keeping the TMIn flow rate constant, achieves different Al, Ga, and In ratios, making a2≤a1≤x1 and 0.5≥b2≥b1≥0.3, thus playing a role in strain compensation buffering and reducing changes in the lattice constant.

[0033] (8) Maintain the temperature at 640-660℃ and continue to introduce TMAl, TMIn, TMGa and PH3, in (Al a1 Ga 1-a1 ) b1 In 1- b1 P / (Al a2 Ga 1-a2 ) b2 In 1-b2 Ga grown on P strain compensation barrier layer 1-x2 In x2 P-quantum well;

[0034] (9) Maintain the temperature at 640-660℃ and continue to introduce TMAl, TMIn, TMGa and PH3, while Ga 1-x2 In x2 Growth on P quantum well (Al) a3 Ga 1-a3 ) b3 In 1-b3 P / (Al a4 Ga 1-a4 ) b4 In 1-b4The P-strain compensation barrier layer, by changing the flow rates of TMAl and TMGa while keeping the TMIn flow rate constant, achieves different Al, Ga, and In ratios, making a3≤a4≤x3 and 0.5≥b3≥b4≥0.3, thus playing a role in strain compensation buffering and reducing changes in the lattice constant.

[0035] (10) Raise the temperature to 690-710℃ and continue to introduce TMAl, TMIn and PH3, in (Al a3 Ga 1-a3 ) b3 In 1-b3 P / (Al a4 Ga 1-a4 ) b4 In 1-b4 Growth on P-strain compensation barrier layer (Al) x3 Ga 1-x3 ) y2 In 1-y2 Waveguide layer on P;

[0036] (11) Maintain the temperature at 690-710℃ and continue to introduce TMAl, TMIn and PH3, in (Al x3 Ga 1-x3 ) y2 In 1-y2 P-type Al is grown on the upper waveguide layer of P. 0.5 In 0.5 P is a confinement layer;

[0037] (12) Maintain the temperature at 690-710℃ and continue to introduce TMAl, TMGa, TMIn and PH3, in the P-type Al 0.5 In 0.5 Growth of confinement layer on P (Al) 0.5 Ga 0.5 ) 0.5 In 0.5 The first upper transition layer reduces the bandgap difference, lowers the voltage, and improves carrier transport efficiency.

[0038] (13) Lower the temperature to 670-690℃, introduce TMIn, TMGa and AsH3, and in (Al 0.5 Ga 0.5 ) 0.5 In 0.5 Ga is grown on the first upper transition layer of P. 0.5 In 0.5 The second upper transition layer further reduces the bandgap difference, lowers the voltage, and improves carrier transport efficiency.

[0039] (14) Lower the temperature to 530-550℃, with a cooling rate not exceeding 40℃ / min, and continue to introduce TMGa and AsH3, while Ga0.5 In 0.5 A GaAs cap layer is grown on the P-transition layer.

[0040] According to a preferred embodiment of the present invention, in step (1), the temperature is raised to 720°C in an H2 environment and baked for 30 minutes, and then AsH3 is introduced and baked for another 30 minutes.

[0041] According to a preferred embodiment of the present invention, in step (2), the reaction temperature is 680°C.

[0042] According to a preferred embodiment of the present invention, in step (3), the reaction temperature is 680°C.

[0043] According to a preferred embodiment of the present invention, in step (4), the reaction temperature is 680°C.

[0044] According to a preferred embodiment of the present invention, in step (5), the reaction temperature is 700°C.

[0045] According to a preferred embodiment of the present invention, in step (6), the reaction temperature is 650°C.

[0046] According to a preferred embodiment of the present invention, in step (7), the reaction temperature is 650°C.

[0047] According to a preferred embodiment of the present invention, in step (8), the reaction temperature is 650°C.

[0048] According to a preferred embodiment of the present invention, in step (9), the reaction temperature is 650°C.

[0049] According to a preferred embodiment of the present invention, in step (10), the reaction temperature is 700°C.

[0050] According to a preferred embodiment of the present invention, in step (11), the reaction temperature is 700°C.

[0051] According to a preferred embodiment of the present invention, in step (12), the reaction temperature is 700°C.

[0052] According to a preferred embodiment of the present invention, in step (13), the reaction temperature is 680°C.

[0053] According to a preferred embodiment of the present invention, in step (14), the reaction temperature is 550°C.

[0054] The MOCVD equipment and ICP etching equipment used in the method of this invention are all existing technologies.

[0055] In this invention, TMGa, TMIn, TMAl, PH3, AsH3, etc. are all raw materials for MOCVD epitaxial growth, and Si2H6, Cp2Mg, CBr4, DEZn, etc. are all doping sources for epitaxial growth. Except for the cap layer GaAs, the doping source on the upper layer of the quantum well is the same doping source.

[0056] The beneficial effects of this invention are as follows:

[0057] The present invention provides an optimized strain compensation structure for strain-compensated AlGaInP red semiconductor lasers, limiting (Al a1 Ga 1-a1 ) b1 In 1-b1 P / (Al a2 Ga 1-a2 ) b2 In 1-b2 P、(Al a3 Ga 1-a3 ) b3 In 1-b3 P / (Al a4 Ga 1-a4 ) b4 In 1-b4 In the strain-compensated barrier layer, a2≤a1≤x1 and a3≤a4≤x3, its Al composition is smaller than that of the waveguide layer, achieving a gradual change in Al composition between the waveguide layer and the strain-compensated barrier layer. This reduces the bandgap, creating a bandgap-gradient structure and improving carrier recombination efficiency; confining (Al a1 Ga 1-a1 ) b1 In 1-b1 P and (Al) a4 Ga 1-a4 ) b4 In 1-b4 When the In content in P is greater than 0.5, compressive strain compensation helps improve the material quality in the active region and increase conversion efficiency; limiting (Al) a1 Ga 1-a1 ) b1 In 1-b1 P / (Al a2 Ga 1-a2 ) b2 In 1-b2 P、(Al a3 Ga 1-a3 ) b3 In 1-b3 P / (Al a4 Ga 1-a4 ) b4 In 1-b4 In the P-strain compensation barrier layer, the values ​​0.5≥b2≥b1≥0.3 and 0.5≥b3≥b4≥0.3 decrease the lattice constant, reducing the difference in lattice constant between the strain compensation barrier layer and the quantum well. This strain buffering improves the uniformity of strain in the quantum well and enhances wavelength uniformity. In other words, by inserting a thinner strain buffer layer or a strain-gradient structure, the difference in lattice constant at the well-barrier interface is reduced, improving wavelength uniformity. This helps ensure consistency, increase yield, and reduce costs. Attached Figure Description

[0058] Figure 1 This is a schematic diagram comparing the structure (a) of the laser described in this invention with that of a conventional AlGaInP red semiconductor laser (b);

[0059] In the figure, 1 is the GaAs substrate (substrate offset angle 9-15°), 2 is the GaAs buffer layer, and 3 is the GaAs layer. 0.5 In 0.5 P is the lower transition layer, and 4 is Al. 0.5 In 0.5 P is a confinement layer, 5 is (Al) x1 Ga 1-x1 ) y1 In 1-y1 P-lower waveguide layer, 6 is (Al) a1 Ga 1-a1 ) b1 In 1-b1 P / (Al a2 Ga 1-a2 ) b2 In 1-b2 P-strain compensation barrier, 7 is Ga 1-x2 In x2 p-quantum well, 8 is (Al) a3 Ga 1-a3 ) b3 In 1-b3 P / (Al a4 Ga 1-a4 ) b4 In 1-b4 P strain compensation barrier, 9 is (Al) x3 Ga 1-x3 ) y2 In 1-y2 P upper waveguide layer, 10 is Al 0.5 In 0.5 P is a confinement layer, 11 is (Al) 0.5 Ga 0.5 ) 0.5 In 0.5 P is a transition layer, and 12 is Ga. 0.5 In 0.5 P is a transition layer and I3 is a GaAs cap layer.

[0060] Figure 2 The results are the photoluminescence (PL) test results of the laser (a) described in this invention and the conventional AlGaInP red semiconductor laser (b). Detailed Implementation

[0061] The present invention will be further described below with reference to embodiments and accompanying drawings.

[0062] Unless otherwise specified, all raw materials used in the embodiments are conventional raw materials and are commercially available; all methods used are existing methods unless otherwise specified.

[0063] Example 1

[0064] A strain-compensated AlGaInP red semiconductor laser and its fabrication method, comprising the following steps:

[0065] (1) Place the GaAs substrate in the growth chamber of the MOCVD equipment, heat it to 720°C in H2 environment and bake for 30 minutes, then introduce AsH3 and bake for 30 minutes to obtain the heat-treated GaAs substrate; perform high-temperature heat treatment on the GaAs substrate to remove water and oxygen on the substrate surface and prepare for step (2).

[0066] (2) The temperature was lowered to 680℃ at a rate not exceeding 30℃ / min. TMGa and AsH3 were introduced to grow a GaAs buffer layer with a thickness of 0.2μm on the GaAs substrate. The doping source was Si2H6 with a doping concentration of 2×10⁻⁶. 18 atoms / cm 3 ;

[0067] (3) Keep the temperature at 680℃, introduce TMGa, AsH3 and PH3, and stop introducing AsH3 and TMGa during the growth process on the GaAs buffer layer to achieve growth pause. The pause time is 15s to exhaust the As atoms in the reaction chamber.

[0068] (4) Maintain the temperature at 680℃ and continue to introduce TMGa, TMIn, and PH3 to grow a GaAs buffer layer with a thickness of 0.2 μm. 0.5 In 0.5 The lower transition layer is P; the doping source is Si2H6, and the doping concentration is 4×10⁻⁶. 18 atoms / cm 3 ;

[0069] (5) Raise the temperature to 700℃ at a rate not exceeding 60℃ / min, and introduce TMAl, TMIn, TMGa, and PH3. 0.5 In 0.5 n-type Al with a thickness of 1.2 μm is grown on the P-type transition layer. 0.5 In 0.5 The lower confinement layer is P; the doping source is Si2H6, and the doping concentration is 1×10⁻⁶. 18 atoms / cm 3 ;

[0070] (6) Lower the temperature to 650℃, introduce TMAl, TMIn, TMGa and PH3, and in n-type Al 0.5 In 0.5A 0.2 μm thick (Al) layer is grown on the P-confinement layer. x1 Ga 1-x1 ) y1 In 1-y1 P-waveguide layer; wherein the 120nm doping concentration is 5×10 16 atoms / cm 3 x1 = 0.55, y1 = 0.5; cooling and adjusting V / III in the waveguide layer to achieve the switching of the optimal growth process between AlInP and GaInP;

[0071] (7) Maintain the temperature at 650℃ and continue to introduce TMAl, TMIn, TMGa and PH3, in (Al x1 Ga 1-x1 ) y1 In 1-y1 (Al) grown on the lower waveguide layer of P a1 Ga 1-a1 ) b1 In 1-b1 P / (Al a2 Ga 1-a2 ) b2 In 1-b2 P-strain compensation barrier layer, wherein the (Al) a1 Ga 1-a1 ) b1 In 1-b1 The thickness of P is 6 nm, a1 = 0.5, b1 = 0.4, and its lattice constant is greater than that of the GaAs substrate. It is subjected to compressive strain to compensate for the tensile strain in the quantum well. The (Al) a2 Ga 1-a2 ) b2 In 1-b2 The thickness of P is 2nm, a2=0.4, b2=0.5, and the lattice constant is the same as that of the GaAs substrate. It plays a strain buffering role in the compressive strain barrier layer and the tensile strain quantum well, reducing the generation of interface dislocations and defects caused by lattice abrupt changes. At the same time, it optimizes stress and reduces the poor wavelength uniformity caused by stress inhomogeneity.

[0072] (8) Maintain the temperature at 650℃ and continue to introduce TMAl, TMIn, TMGa and PH3, in (Al a1 Ga 1-a1 ) b1 In 1-b1 P / (Al a2 Ga 1-a2 ) b2 In 1-b2 Ga with a thickness of 10 nm is grown on a strain-compensated barrier layer. 1-x2 In x2 P-quantum well, unintentionally doped, x2 = 0.4;

[0073] (9) Maintain the temperature at 650℃ and continue to introduce TMAl, TMIn, TMGa and PH3, in Ga 1-x2 In x2 Growth on P quantum well (Al) a3 Ga 1-a3 ) b3 In 1-b3 P / (Al a4 Ga 1-a4 ) b4 In 1-b4 P-strain compensation barrier layer, wherein the (Al) a3 Ga 1-a3 ) b3 In 1-b3 The thickness of P is 2 nm, a3 = 0.4, b3 = 0.5, and its lattice constant is the same as that of the GaAs substrate. It acts as a strain buffer in the compressive strain barrier layer and tensile strain quantum well, reducing the generation of interface dislocations and defects caused by lattice abrupt changes; the (Al) a4 Ga 1-a4 ) b4 In 1-b4 The thickness of P is 6 nm, a4 = 0.5, b4 = 0.4, and the lattice constant is greater than that of the GaAs substrate. It is subjected to compressive strain to compensate for the tensile strain in the quantum well.

[0074] (10) Raise the temperature to 700℃ and continue to introduce TMAl, TMIn and PH3, in (Al a3 Ga 1-a3 ) b3 In 1-b3 P / (Al a4 Ga 1-a4 ) b4 In 1-b4 A 0.1 μm thick (Al) layer is grown on the P-strain compensation barrier. x3 Ga 1-x3 ) y2 In 1-y2 The waveguide layer on P is doped with CBr4 as the doping source and has a doping concentration of 4 × 10⁻⁶. 17 atoms / cm 3 x3 = 0.55, y2 = 0.5;

[0075] (11) Maintain the temperature at 700℃ and continue to introduce TMAl, TMIn and PH3, in (Al x3 Ga 1-x3 ) y2 In 1-y2 A 0.9 μm thick P-type Al₂O₃ layer is grown on the P-waveguide layer. 0.5 In 0.5 The P-type confinement layer has a doping source of Cp₂Mg and a doping concentration of 1×10⁻⁶.18 atoms / cm 3 ;

[0076] (12) Maintain the temperature at 700℃ and continue to introduce TMAl, TMGa, TMIn and PH3 into the P-type Al. 0.5 In 0.5 The confinement layer on P is 10 nm thick (Al) 0.5 Ga 0.5 ) 0.5 In 0.5 The first upper transition layer is P, with Cp₂Mg as the doping source and a doping concentration of 2 × 10⁻⁶. 18 atoms / cm 3 This reduces the bandgap difference, lowers the voltage, and improves carrier transport efficiency.

[0077] (13) Lower the temperature to 680℃, introduce TMIn, TMGa and AsH3, and in (Al 0.5 Ga 0.5 ) 0.5 In 0.5 Ga with a thickness of 10 nm is grown on the first upper transition layer of P. 0.5 In 0.5 The second upper transition layer is P, with Cp2Mg as the doping source and a doping concentration of 2×10⁻⁶. 18 atoms / cm 3 This further reduces the bandgap difference, lowers the voltage, and improves carrier transport efficiency.

[0078] (14) Lower the temperature to 540℃, with a cooling rate not exceeding 40℃ / min, and continue to introduce TMGa and AsH3, while Ga 0.5 In 0.5 A GaAs cap layer with a thickness of 0.2 μm is grown on the P-transition layer; the doping source is CBr4, and the doping concentration is 7 × 10⁻⁶. 19 atoms / cm 3 .

[0079] Conventional AlGaInP red semiconductor lasers, such as Figure 1 As shown in (a), the structure of the laser described in Embodiment 1 is as follows. Figure 1 As shown in (b). Figure 1 (a) and Figure 1 (b) By comparison, it can be seen that the present invention uses (Al) a1 Ga 1-a1 ) b1 In 1-b1 P / (Al a2 Ga 1-a2 ) b2 In 1-b2 P structure and (Al) a3 Ga1-a3 ) b3 In 1-b3 P / (Al a4 Ga 1-a4 ) b4 In 1-b4 The P-structure acts as a strain compensation barrier layer, reducing the lattice constant difference at the well-barrier interface by inserting a thinner strain buffer layer, thereby improving wavelength uniformity.

[0080] Example 2

[0081] A strain-compensated AlGaInP red semiconductor laser and its fabrication method are described in Example 1, except that:

[0082] In step (2), the thickness of the GaAs buffer layer is 0.1 μm, and the silicon atom doping concentration is 3 × 10⁻⁶. 18 atoms / cm 3 .

[0083] In step (4), Ga 0.5 In 0.5 The thickness of the transition layer under P is 0.1 μm, and the doping concentration is 2 × 10⁻⁶. 18 atoms / cm 3 .

[0084] In step (5), Al 0.5 In 0.5 The thickness of the P-confinement layer is 0.7 μm, and the doping concentration is 7 × 10⁻⁶. 17 atoms / cm 3 .

[0085] In step (6), (Al) x1 Ga 1-x1 ) y1 In 1-y1 The thickness of the P-waveguide layer is 0.1 μm, with a doping concentration of 1 × 10⁻⁶ nm at 60 nm. 16 atoms / cm 3 x1 = 0.45, y1 = 0.4.

[0086] In step (7), (Al) a1 Ga 1-a1 ) b1 In 1-b1 P / (Al a2 Ga 1-a2 ) b2 In 1-b2 In the P-strain compensation barrier layer, (Al) a1 Ga 1-a1 ) b1 In 1-b1The thickness of P is 4 nm, a1 = 0.45, b1 = 0.3; (Al) a2 Ga 1-a2 ) b2 In 1-b2 The thickness of P is 1 nm, a2 = 0.45, b2 = 0.4.

[0087] In step (8), Ga 1-x2 In x2 The thickness of the first quantum well is 8 nm, and x2 = 0.3.

[0088] In step (9), (Al) a3 Ga 1-a3 ) b3 In 1-b3 P / (Al a4 Ga 1-a4 ) b4 In 1-b4 In the P-strain compensation barrier layer, (Al) a3 Ga 1-a3 ) b3 In 1-b3 The thickness of P is 1 nm, a3 = 0.45, b3 = 0.4; (Al) a4 Ga 1-a4 ) b4 In 1-b4 The thickness of P is 4 nm, a4 = 0.45, b4 = 0.3.

[0089] In step (10), (Al) x3 Ga 1-x3 ) y2 In 1-y2 The thickness of the waveguide layer on P is 0.05 μm, of which the doping concentration at 17 nm is 4 × 10⁻⁶. 17 atoms / cm 3 x3 = 0.45, y2 = 0.4.

[0090] In step (11), Al 0.5 In 0.5 The thickness of the confinement layer on P is 0.8 μm, the doping source is DEZn, and the doping concentration is 7 × 10⁻⁶. 17 atoms / cm 3 .

[0091] In step (12), (Al) 0.5 Ga 0.5 ) 0.5 In 0.5 The thickness of the first upper transition layer of P is 8 nm, the doping source is DEZn, and the doping concentration is 1.5 × 10⁻⁶. 18 atoms / cm 3 .

[0092] In step (13), Ga 0.5 In 0.5 The second upper transition layer of P has a thickness of 8 nm, and the doping source is DEZn with a doping concentration of 1.5 × 10⁻⁶. 18 atoms / cm 3 .

[0093] In step (14), the thickness of the GaAs cap layer is 0.1 μm, 4 × 10⁻⁶. 19 atoms / cm 3 .

[0094] The other steps and conditions are the same as in Example 1.

[0095] Example 3

[0096] A strain-compensated AlGaInP red semiconductor laser and its fabrication method are described in Example 1, except that:

[0097] In step (2), the thickness of the GaAs buffer layer is 0.3 μm, and the silicon atom doping concentration is 5 × 10⁻⁶. 18 atoms / cm 3 .

[0098] In step (4), Ga 0.5 In 0.5 The thickness of the transition layer under P is 0.3 μm, and the doping concentration is 5 × 10⁻⁶. 18 atoms / cm 3 .

[0099] In step (5), Al 0.5 In 0.5 The thickness of the P-type confinement layer is 1.5 μm, and the doping concentration is 2 × 10⁻⁶. 18 atoms / cm 3 .

[0100] In step (6), (Al) x1 Ga 1-x1 ) y1 In 1-y1 The thickness of the P-waveguide layer is 0.3 μm, with a doping concentration of 3 × 10⁻⁶ nm at 200 nm. 17 atoms / cm 3 x1 = 0.65, y1 = 0.6.

[0101] In step (7), (Al) a1 Ga 1-a1 ) b1 In 1-b1 P / (Al a2 Ga 1-a2 ) b2 In1-b2 In the P-strain compensation barrier layer, (Al) a1 Ga 1-a1 ) b1 In 1-b1 The thickness of P is 7 nm, a1 = 0.65, b1 = 0.5; (Al) a2 Ga 1-a2 ) b2 In 1-b2 The thickness of P is 3nm, a2 = 0.65, b2 = 0.5.

[0102] In step (8), Ga 1-x2 In x2 The thickness of the first quantum well is 15 nm, and x2 = 0.45.

[0103] In step (9), (Al) a3 Ga 1-a3 ) b3 In 1-b3 P / (Al a4 Ga 1-a4 ) b4 In 1-b4 In the P-strain compensation barrier layer, (Al) a3 Ga 1-a3 ) b3 In 1-b3 The thickness of P is 3 nm, a3 = 0.65, b3 = 0.5; (Al) a4 Ga 1-a4 ) b4 In 1-b4 The thickness of P is 7 nm, a4 = 0.65, b4 = 0.5.

[0104] In step (10), (Al) x3 Ga 1-x3 ) y2 In 1-y2 The thickness of the waveguide layer on P is 0.15 μm, with a doping concentration of 5 × 10⁻⁶ nm at 100 nm. 17 atoms / cm 3 x3 = 0.65, y2 = 0.6.

[0105] In step (11), Al 0.5 In 0.5 The thickness of the confinement layer on P is 1.2 μm, the doping source is DEZn, and the doping concentration is 1.5 × 10⁻⁶. 18 atoms / cm 3 .

[0106] In step (12), (Al) 0.5 Ga 0.5 ) 0.5 In0.5 The thickness of the first upper transition layer is 15 nm, the doping source is DEZn, and the doping concentration is 3 × 10⁻⁶. 18 atoms / cm 3 .

[0107] In step (13), Ga 0.5 In 0.5 The second upper transition layer of P has a thickness of 15 nm, and the doping source is DEZn with a doping concentration of 3 × 10⁻⁶. 18 atoms / cm 3 .

[0108] In step (14), the thickness of the GaAs cap layer is 0.5 μm, 1 × 10⁻⁶. 20 atoms / cm 3 .

[0109] The other steps and conditions are the same as in Example 1.

[0110] Example 4

[0111] A strain-compensated AlGaInP red semiconductor laser and its fabrication method are described in Example 1, except that:

[0112] In step (5), the reaction temperature is 690℃.

[0113] In step (6), the reaction temperature is 640℃.

[0114] In step (7), the reaction temperature is 640℃.

[0115] In step (8), the reaction temperature is 640℃.

[0116] In step (9), the reaction temperature is 640℃.

[0117] In step (10), the reaction temperature is 690℃.

[0118] In step (11), the reaction temperature is 690℃.

[0119] In step (12), the reaction temperature is 690℃.

[0120] In step (13), the reaction temperature is 670℃.

[0121] In step (14), the reaction temperature is 530℃.

[0122] The other steps and conditions are the same as in Example 1.

[0123] Test case

[0124] Photoluminescence (PL) tests were performed on a conventional AlGaInP red semiconductor laser and the laser described in Embodiment 1 of this invention. The results are as follows: Figure 2 As shown.

[0125] Depend on Figure 2 The comparison results show that, compared with conventional AlGaInP red semiconductor lasers, the laser described in Example 1 of this invention has a stable wavelength in the 1nm range for photoluminescence (PL) testing of epitaxial wafers, a significantly reduced standard deviation (stddev), and improved wavelength uniformity, which helps to ensure consistency, increase yield, and reduce costs.

Claims

1. A strain-compensated AlGalnP red semiconductor laser, characterized by, GaAs substrate, GaAs buffer layer, Ga 0.5 In 0.5 P lower transition layer, Al 0.5 In 0.5 P lower confinement layer, (Al x1 Ga 1-x1 ) y1 In 1-y1 P lower waveguide layer, (Al a1 Ga 1-a1 ) b1 In 1-b1 P / (Al a2 Ga 1-a2 ) b2 In 1-b2 P strain compensation barrier layer, Ga 1-x2 In x2 P quantum well, (Al a3 Ga 1-a3 ) b3 In 1-b3 P / (Al a4 Ga 1-a4 ) b4 In 1-b4 P strain compensation barrier layer, (Al x3 Ga 1-x3 ) y2 In 1-y2 P upper waveguide layer, Al 0.5 In 0.5 P upper confinement layer, (Al 0.5 Ga 0.5 ) 0.5 In 0.5 P first upper transition layer, Ga 0.5 In 0.5 P second upper transition layer and GaAs cap layer; wherein a2≤a1≤x1, a3≤a4≤x3, 0.5≥b2≥b1≥0.3, 0.5≥b3≥b4≥0.3, (Al a1 Ga 1-a1 ) b1 In 1-b1 P and (Al a4 Ga 1-a4 ) b4 In 1-b4 In component in InP is greater than or equal to 0.

5.

2. The strain-compensated AlGalnP red semiconductor laser of claim 1, wherein, comprises one or more of the following conditions: i. the substrate is a GaAs substrate; ii. The GaAs buffer layer is a silicon atom doped GaAs material, the doping source is Si2H6, the thickness is 0.1-0.3 μm, the doping concentration is 2x10 18 -5x10 18 atoms / cm 3 ; iii、 the Ga 0.5 In 0.5 The P lower transition layer is doped with silicon atoms, the doping source is Si2H6, the thickness is 0.1-0.3 μm, and the doping concentration is 2x1018 atoms / cm3. 18 -5x1018 atoms / cm3 18 -5x1018 atoms / cm3 3 ; iv. The Al 0.5 In 0.5 The lower confinement layer is n-type Al 0.5 In 0.5 The lower confinement layer is doped with silicon atoms, the doping source is Si2H6, the thickness is 0.7-1.5 μm, and the doping concentration is 7 x 1018 atoms / cm3. 17 -2 x 1018 atoms / cm3 18 - 5 x 1018 atoms / cm3 3 ; v、 the (Al x1 Ga 1-x1 ) y1 In 1-y1 The thickness of the lower waveguide layer is 0.1-0.3 μm, and 2 / 3 of the thickness near the lower confinement layer is doped with Si2H6, with a doping concentration of 1 x 10 16 -3 x 10 17 atoms / cm 3 , 0.45≤x1≤0.65, 0.4≤y1≤0.

6.

3. The strain-compensated AlGalnP red semiconductor laser of claim 2, wherein, comprises one or more of the following conditions: i. the thickness of the buffer layer is 0.2 μm and the doping concentration of silicon atoms is 2 x 1019 atoms / cm3 18 3 ;​ ii、 the Ga 0.5 In 0.5 The thickness of the P lower transition layer is 0.2 μm; the doping concentration is 4 x 10 18 atoms / cm 3 ; iii、 the Al 0.5 In 0.5 The thickness of the P lower limit layer is 1.2 μm; the doping concentration is 1 x 10 18 atoms / cm 3 ; iv、the (Al x1 Ga 1-x1 ) y1 In 1-y1 The thickness of the P lower waveguide layer is 0.2 μm, with a 120 nm doped concentration of 5 x 10 16 atoms / cm 3 , x1=0.55, y1=0.

5.

4. The strain-compensated AlGalnP red semiconductor laser of claim 1, wherein, comprises one or more of the following conditions: i. said (Al a1 Ga 1-a1 ) b1 In 1-b1 P / (Al a2 Ga 1-a2 ) b2 In 1-b2 P strain compensation barrier layer (Al a1 Ga 1-a1 ) b1 In 1-b1 P thickness of 4-7 nm, (Al a2 Ga 1-a2 ) b2 In 1-b2 P thickness of 1-3 nm, unintentionally doped, 0.45≤a1≤0.65, 0.3≤b1≤0.5; 0.45≤a2≤0.65, 0.4≤b2≤0.5; ii、 the Ga 1-x2 In x2 P first quantum well has a thickness of 8-15 nm, is not intentionally doped, and 0.3≤x2≤0.45; iii. the (Al a3 Ga 1-a3 ) b3 In 1-b3 P / (Al a4 Ga 1-a4 ) b4 In 1-b4 P strain compensation barrier layer (Al a3 Ga 1-a3 ) b3 In 1- b3 P thickness of 1-3 nm, (Al a4 Ga 1-a4 ) b4 In 1-b4 P thickness of 4-7 nm, unintentionally doped, 0.45≤a3≤0.65, 0.4≤b3≤0.5, 0.45≤a4≤0.65, 0.3≤b4≤0.

5.

5. The strain-compensated AlGalnP red semiconductor laser of claim 4, wherein, comprises one or more of the following conditions: i, the (Al a1 Ga 1-a1 ) b1 In 1-b1 P / (Al a2 Ga 1-a2 ) b2 In 1-b2 P strain compensation barrier layer (Al a1 Ga 1-a1 ) b1 In 1-b1 P thickness of 6 nm, (Al a2 Ga 1-a2 ) b2 In 1-b2 P thickness of 2 nm, unintentionally doped, a1=0.5, b1=0.4; a2 = 0.4, b2 = 0.5; ii、 the Ga 1-x2 In x2 P first quantum well is 10 nm thick, unintentionally doped, x2=0.4; iii. The aforementioned (Al) a3 Ga 1-a3 ) b3 In 1-b3 P / (Al) a4 Ga 1-a4 ) b4 In 1-b4 In the P strain compensation barrier layer (Al) a3 Ga 1-a3 ) b3 In 1- b3 The thickness of P is 2nm, (Al a4 Ga 1-a4 ) b4 In 1-b4 The thickness of P is 6nm, unintentionally doped, with a3=0.4, b3=0.5, a4=0.5, and b4=0.

4.

6. The strain-compensated AlGalnP red semiconductor laser of claim 1, wherein, comprises one or more of the following conditions: i. said (Al x3 Ga 1-x3 ) y2 In 1-y2 The thickness of the upper waveguide layer is 0.05-0.15 μm, 1 / 3 of the thickness near the upper confining layer is doped with magnesium atoms or zinc atoms, the doping source is Cp2Mg or DEZn, and the doping concentration is 2x10 17 -5x10 17 atoms / cm 3 , 0.45≤x3≤0.65, 0.4≤y2≤0.

6. ii. The Al 0.5 In 0.5 P upper confining layer is P-type Al 0.5 In 0.5 P upper confining layer, doped with magnesium atoms or zinc atoms, doping source is Cp2Mg or DEZn, thickness is 0.8-1.2 μm, doping concentration is 7x1018 atoms / cm3 17 -1.5x1018 atoms / cm3 18 3 ;​ iii. the (Al 0.5 Ga 0.5 ) 0.5 In 0.5 P first upper transition layer doped with magnesium atoms or zinc atoms, doping source is Cp2Mg or DEZn, thickness is 8-15 nm, doping concentration is 1.5x10 18 -3x10 18 atoms / cm 3 ; IV, Ga 0.5 In 0.5 P second upper transition layer doped with magnesium atoms or zinc atoms, doping source is Cp2Mg or DEZn, thickness is 8-15 nm, doping concentration is 1.5x10 18 -3x10 18 atoms / cm 3 ; V. The GaAs cap layer is a carbon-doped GaAs material, the doping source is CBr4 or DEZn, the thickness is 0.1-0.5 μm, and the doping concentration is 4x1018 atoms / cm3. 19 -1x1018 atoms / cm3 20 3 .​ 7. The strain-compensated AlGalnP red semiconductor laser of claim 6, wherein the first and second cladding layers are each composed of Al0.6Ga0.4P. comprises one or more of the following conditions: i. the (Al x3 Ga 1-x3 ) y2 In 1-y2 The thickness of the upper waveguide layer is 0.1 μm, with a 35 nm doped concentration of 4 x 10 17 atoms / cm 3 , x3=0.55, y2=0.

5. ii、 the Al 0.5 In 0.5 The thickness of the confinement layer on P is 0.9 μm, the doping source is Cp2Mg, and the doping concentration is 1 x 10 18 atoms / cm 3 ; iii、the (Al 0.5 Ga 0.5 ) 0.5 In 0.5 The thickness of the first upper transition layer is 10 nm, the doping source is Cp2Mg, and the doping concentration is 2 x 10 18 atoms / cm 3 ; IV, the Ga 0.5 In 0.5 The thickness of the second upper transition layer is 10 nm, the doping source is Cp2Mg, and the doping concentration is 2 x 10 18 atoms / cm 3 ; V. The GaAs cap layer has a thickness of 0.2 μm and a doping concentration of 7 x 1018atoms / cm3 19 3 .​ 8. The method of producing a strain-compensated AlGalnP red semiconductor laser as claimed in any one of claims 1 to 7, characterized by, comprises the following steps: The substrate is surface-heat treated in a MOCVD growth chamber, then a GaAs substrate, a GaAs buffer layer, a Ga 0.5 In 0.5 P lower transition layer, an Al 0.5 In 0.5 P lower confinement layer, an (Al x1 Ga 1-x1 ) y1 In 1-y1 P lower waveguide layer, an (Al a1 Ga 1-a1 ) b1 In 1-b1 P / (Al a2 Ga 1-a2 ) b2 In 1-b2 P strain compensation barrier layer, a Ga 1-x2 In x2 P quantum well, an (Al a3 Ga 1-a3 ) b3 In 1-b3 P / (Al a4 Ga 1-a4 ) b4 In 1-b4 P strain compensation barrier layer, an (Al x3 Ga 1-x3 ) y2 In 1-y2 P upper waveguide layer, an Al 0.5 In 0.5 P upper confinement layer, an (Al 0.5 Ga 0.5 ) 0.5 In 0.5 P first upper transition layer, a Ga 0.5 In 0.5 P second upper transition layer and a GaAs cap layer, to obtain a strain-compensated AlGaInP red semiconductor laser.

9. The method of claim 8, wherein the AlGaInP red light semiconductor laser is strain-compensated. comprises the following steps: (1) GaAs substrate is placed in the MOCVD device growth chamber, heated to 710-730℃ under H2 environment for 20-40 minutes, then AsH3 is introduced, and baked for 20-40 minutes to obtain a heat-treated GaAs substrate; the GaAs substrate is subjected to high temperature heat treatment to remove water and oxygen on the substrate surface, and to prepare for step (2); (2) the temperature is reduced to 670-690℃ at a rate not higher than 30℃ / min, TMGa and AsH3 are introduced, and a GaAs buffer layer is grown on the GaAs substrate; the purpose is to prevent defects from spreading from the substrate into the confinement layer, to provide a fresh growth interface, and to improve the material growth quality; (3) the temperature is maintained at 670-690℃, TMGa and AsH3 are introduced, and the growth is stopped by stopping the introduction of AsH3 and TMGa during the growth of the GaAs buffer layer, and the stop time is 3s~30s, and the reaction chamber is depleted of As atoms; (4) The temperature is kept at 670-690 °C, and TMGa, TMIn and PH3 are continuously introduced to grow GaAs on the GaAs buffer layer 0.5 In 0.5 P underlayer; (5) raising the temperature to 690-710°C at a rate of no more than 60°C / min, introducing TMAl, TMIn, TMGa and PH3, and growing an n-type Al 0.5 In 0.5 P under the transition layer 0.5 In 0.5 P under the confinement layer (6) The temperature is lowered to 640-660°C, TMAl, TMIn, TMGa and PH3 are introduced, and the n-type Al 0.5 In 0.5 P lower confinement layer is grown (Al x1 Ga 1-x1 ) y1 In 1-y1 P lower waveguide layer; (7) Keep the temperature at 640-660℃, continue to pass TMAl, TMIn, TMGa and PH3, grow (Al x1 Ga 1-x1 ) y1 In 1-y1 P lower waveguide layer a1 Ga 1-a1 ) b1 In 1-b1 P / (Al a2 Ga 1-a2 ) b2 In 1-b2 P strain compensation barrier layer, by changing the flow of TMAl, TMGa, TMIn flow is constant, to achieve different Al, Ga, In ratio change, a2≤a1≤x1, 0.5≥b2≥b1≥0.3, play a strain compensation buffer role, reduce the change of lattice constant; (8) Keep the temperature at 640-660°C, continue to pass TMAl, TMIn, TMGa and PH3, in (Al a1 Ga 1-a1 ) b1 In 1-b1 P / (Al a2 Ga 1-a2 ) b2 In 1-b2 P strain compensation barrier layer on Ga 1-x2 In x2 P quantum well; (9) Keep the temperature at 640-660℃, continue to pass TMAl, TMIn, TMGa and PH3, and the flow rate of TMGa is 0.5-1.5ml / min, the flow rate of TMIn is 0.5-1.5ml / min, the flow rate of TMAl is 0.5-1.5ml / min, and the flow rate of PH3 is 0.5-1.5ml / min, and the pressure is 20-30Torr, and the time is 20-30min, to grow a GaAs buffer layer on the GaAs substrate. 1-x2 In x2 P quantum well a3 Ga 1-a3 ) b3 In 1-b3 P / (Al a4 Ga 1-a4 ) b4 In 1-b4 P strain compensation barrier layer, by changing the flow rate of TMAl and TMGa, the flow rate of TMIn is unchanged, the change of Al, Ga and In proportion is realized, a3≤a4≤x3, 0.5≥b3≥b4≥0.3, the function of strain compensation buffer is played, and the change of lattice constant is reduced. (10) The temperature is raised to 690-710°C, and the flow of TMAl, TMIn and PH3 is continued, and (Al a3 Ga 1-a3 ) b3 In 1-b3 P / (Al a4 Ga 1-a4 ) b4 In 1-b4 P strained compensation barrier layer, and (Al x3 Ga 1-x3 ) y2 In 1-y2 P upper waveguide layer; (11) Keep the temperature at 690-710°C, continue to pass TMAl, TMIn and PH3, on (Al x3 Ga 1-x3 ) y2 In 1-y2 P upper waveguide layer on the growth of P-type Al 0.5 In 0.5 P on the confinement layer; (12) Keep temperature at 690-710℃, continue to pass TMAl, TMGa, TMIn and PH3, on P-type Al 0.5 In 0.5 P upper transition layer, reduce band gap difference, reduce voltage, improve carrier transport efficiency 0.5 Ga 0.5 ) 0.5 In 0.5 P first upper transition layer, reduce band gap difference, reduce voltage, improve carrier transport efficiency (13) The temperature is lowered to 670-690 °C, TMIn, TMGa and AsH3 are introduced, and (Al 0.5 Ga 0.5 ) 0.5 In 0.5 P The first upper transition layer is grown on Ga 0.5 In 0.5 P The second upper transition layer further reduces the band gap difference, reduces the voltage, and improves the carrier transport efficiency; (14) The temperature is lowered to 530-550°C at a rate of no more than 40°C / min, and the flow of TMGa and AsH3 is continued, and the Ga 0.5 In 0.5 A GaAs cap layer is grown on the transition layer on P.

10. The method of claim 9, wherein the AlGaInP red light semiconductor laser is strain-compensated. comprises one or more of the following conditions: i. in step (1), in step (1), the temperature is raised to 720℃ under H2 environment for 30 minutes, then AsH3 is introduced, and baked for 30 minutes; ii. in step (2), the reaction temperature is 680℃; iii. in step (3), the reaction temperature is 680℃; iv. in step (4), the reaction temperature is 680℃; v. in step (5), the reaction temperature is 700℃; vi. in step (6), the reaction temperature is 650℃; vii. in step (7), the reaction temperature is 650℃; viii. in step (8), the reaction temperature is 650℃; ix. in step (9), the reaction temperature is 650℃; x. in step (10), the reaction temperature is 700℃; xi. in step (11), the reaction temperature is 700℃; xii. in step (12), the reaction temperature is 700℃; xiii. in step (13), the reaction temperature is 680℃; xiv. in step (14), the reaction temperature is 550℃.

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