A semiconductor discrete device reliability test circuit design method and circuit

Abstract

A semiconductor discrete device reliability test circuit design method and circuit thereof, belonging to the field of semiconductor discrete devices. The method comprises: designing a device aging circuit module based on the characteristics of the semiconductor discrete device, providing a constant current limiting circuit in the connection path between the device aging circuit module and the power supply, providing a device aging status display circuit in the connection path between the device aging circuit and the power supply, and providing a current flow control circuit in the connection path between the device aging circuit and the power supply, so that the direction of the current flowing through the device can be changed by reversing the polarity of the power supply. The circuit comprises: a positive power supply, a negative power supply, a positive constant current module, a negative constant current module, a forward conduction module, a reverse conduction module, a positive display module, a reverse display module, and a circuit module, which are connected according to the circuit principle structure. The method solves the reliability problem caused by the use of fuses in the high-temperature reverse bias aging of existing semiconductor discrete devices. The method is widely used in the field of high-temperature reverse bias aging of semiconductor discrete devices.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor discrete devices, and further relates to the field of semiconductor discrete device testing, and specifically, to a semiconductor discrete device reliability test circuit design method and circuit. Background Art

[0002] At present, fuses are commonly used in the high-temperature reverse-bias aging process of semiconductor discrete devices to protect the aging circuit. The protection principle is that when the semiconductor discrete device in the aging circuit malfunctions, a large current passes through the fuse to blow the fuse, thereby protecting the device from further damage.

[0003] The main defects of the original technology are as follows:

[0004] a. Slow reaction speed: The fuse needs a certain amount of time to accumulate energy before it will melt. During this period, a large current will pass through the semiconductor device. Excessive current will further damage the device.

[0005] b. Low efficiency: Each fuse must be tested individually before each aging test to ensure that the fuse has not failed.

[0006] c. Poor reliability: The power-carrying capacity of the fuse decreases after long-term use. There is a possibility that the fuse will blow under normal conditions during the aging process, resulting in the semiconductor device failing to undergo full-time aging, leading to ineffective aging.

[0007] d. No self-test capability: After semiconductor devices are connected, there is a risk of false contact in the circuit before they are aged on the machine. They need to be connected to dedicated aging equipment for inspection, which is complex to operate and has high equipment requirements.

[0008] e. No self-protection capability: There is a risk of power supply equipment failure or operator error. When the power supply equipment fails or the operator makes an error (such as excessive voltage input), excessive current will flow through the fuse and into the semiconductor device. At this time, regardless of whether the fuse is blown, the semiconductor device will be damaged or burned.

[0009] In view of this, the present invention is proposed. Summary of the Invention

[0010] The technical problem to be solved by the present invention is to solve the process reliability problem caused by using a fuse to protect the aging circuit in the existing high-temperature reverse bias aging process of semiconductor discrete devices.

[0011] To this end, the present invention provides a method for designing a reliability test circuit for a semiconductor discrete device, the specific method is as follows:

[0012] (1) Design device aging circuit module based on the characteristics of semiconductor discrete devices.

[0013] (2) A constant current limiting circuit is set in the connection path between the device aging circuit module and the power supply to replace the traditional fuse and improve the response speed.

[0014] (3) A device aging status display circuit is provided in the connection path between the device aging circuit and the power supply, and different displays are performed according to the quality change of the device during the aging process, thereby improving the intuitive monitoring capability of the process. The display includes sound or visual perception.

[0015] (4) A current direction control circuit is set in the connection path between the device aging circuit and the power supply to perform aging tests on the functions of each direction of the bidirectional or multidirectional device.

[0016] (5) The device aging circuit module is connected symmetrically between the positive power supply and the negative power supply (including the ground) through a constant current limiting circuit and a device aging status display circuit. The direction of the current flowing through the device can be changed by reversing the power polarity.

[0017] A circuit designed using the semiconductor discrete device reliability test circuit design method is as follows: Figure 1 As shown. It includes: positive power supply, negative power supply (including ground), positive constant current module, negative constant current module, forward conduction module, reverse conduction module, positive display module, reverse display module, circuit module (including device under test).

[0018] The positive power supply is connected to the positive electrode of the forward constant current module, the negative electrode of the forward constant current module is connected to the positive electrode of the forward display module, and the negative electrode of the forward display module is connected to the connection terminal set by the circuit module.

[0019] The positive power supply is connected to the negative end of the reverse conducting module, and the positive end of the reverse conducting module is connected to the negative end of the forward display module.

[0020] The negative power supply is connected to the positive pole of the reverse constant current module, the negative pole of the reverse constant current module is connected to the positive pole of the reverse display module, and the negative pole of the reverse display module is connected to the connection terminal set by the circuit module.

[0021] The negative power supply is connected to the negative end of the forward conducting module, and the positive end of the forward conducting module is connected to the negative end of the reverse display module.

[0022] The negative power supply and the positive power supply can be swapped according to the bidirectional polarity of the device under test.

[0023] The technical effects of the present invention are as follows:

[0024] (1) Improve the reaction speed when the current exceeds the rated current: The reaction speed is determined by the response speed of the constant current module. The circuit protection reaction time can be improved to the ns level, achieving protection without delay.

[0025] (2) It has self-checking capability and improves efficiency: after power is turned on, the display status of the display module can be used to judge whether the circuit is working normally and whether there are problems such as cold soldering and cold contact in the circuit.

[0026] (3) Improve reliability: There are no fuses in the entire circuit, avoiding the risk of invalid aging caused by fuse aging.

[0027] (4) With self-protection capability: constant current design technology is used. When the voltage is too high due to improper operation, the constant current protection will work to ensure that no large current will pass through the semiconductor device, thus protecting the semiconductor device from damage.

[0028] (5) It has a fault-tolerant function. When the equipment is abnormal or the operator makes an error, the constant current module protection function is turned on to protect the components in the circuit from being damaged or burned due to excessive voltage.

[0029] (6) The aging process can be monitored intuitively. During the aging process, the display status of the display module can be used to directly determine whether the aging state of the device is normal. The aging process is easy to monitor in real time.

[0030] Technical effects of the present invention:

[0031] The present invention is applied to the technical field of high-temperature reverse bias aging screening of semiconductor discrete devices (such as TVS arrays, diodes, triodes, MOSFETs, IGBTs, etc.). BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 This is a schematic diagram of the reliability test principle block diagram.

[0033] Figure 2 Schematic diagram of unidirectional current flow in a unit circuit.

[0034] Figure 3 Schematic diagram of bidirectional current flow in the unit circuit.

[0035] Figure 4 Schematic diagram of the high-temperature reverse bias test structure of a unidirectional transient voltage suppression diode.

[0036] Figure 5 This is a schematic diagram of the high-temperature reverse bias test structure of a bidirectional transient voltage suppression diode.

[0037] Figure 6 This is a schematic diagram of the high-temperature reverse bias test structure of a MOSFET tube.

[0038] Figure 7 This is a schematic diagram of the high-temperature reverse bias test structure of the IGBT tube.

[0039] Figure 8 This is a schematic diagram of the high-temperature reverse bias test structure of a transistor. DETAILED DESCRIPTION

[0040] like Figure 1-8 As shown, taking the high temperature reverse bias test of unidirectional transient voltage suppressor diodes, bidirectional transient voltage suppressor diodes, unidirectional TVS arrays, bidirectional TVS arrays, MOSFET tubes, IGBT tubes, and triodes as an example, a semiconductor discrete device reliability test circuit design method and circuit thereof are specifically implemented as follows:

[0041] The positive power supply is a DC power supply VCC, the negative power supply is grounded GND, the forward constant current module and the negative constant current module use constant current diodes, the forward conduction module and the reverse conduction module use rectifier diodes, the forward display module and the reverse display module use LED light-emitting electrode tubes, and the circuit module is related connecting wires, a device under test fixture and a device under test.

[0042] like Figure 2 As shown, the anode of the constant current diode Q1 is connected to the cathode of the rectifier diode D1 and the Port1 end of the unit circuit, the cathode of the constant current diode Q1 is connected to the anode of the LED light-emitting electrode tube D3, the cathode of the LED light-emitting electrode tube D3 is connected to the anode of the rectifier diode D1 and one end of the device under test; the other end of the device under test is connected to the anode of the rectifier diode D2 and the cathode of the LED light-emitting electrode tube D4, the anode of the LED light-emitting electrode tube D4 is connected to the cathode of the constant current diode Q2, the anode of the constant current diode Q2 is connected to the cathode of the rectifier diode D2 and the Port2 end of the unit circuit.

[0043] like Figure 3 As shown in the figure, when Port 1 of the unit circuit is connected to the positive power supply VCC and Port 2 is grounded, the current flows from left to right. When Port 2 of the unit circuit is connected to the positive power supply VCC and Port 1 is grounded, the current flows from right to left. By swapping the power supply interfaces, the current direction can be reversed.

[0044] The same circuit connection principle:

[0045] like Figure 4 The figure shows the schematic diagram of the high temperature reverse bias test structure of a unidirectional transient voltage suppression diode.

[0046] like Figure 5 The figure shows the schematic diagram of the high temperature reverse bias test structure of the bidirectional transient voltage suppression diode.

[0047] like Figure 6 The figure shows the schematic diagram of the high temperature reverse bias test structure of MOSFET tube.

[0048] like Figure 7 The figure shows the schematic diagram of the high temperature reverse bias test structure of the IGBT tube.

[0049] like Figure 8The figure shows the schematic diagram of the high temperature reverse bias test structure of the transistor.

[0050] For the high temperature reverse bias test of multi-channel array devices, several unit circuits are connected in parallel to realize the high temperature reverse bias test of the multi-channel array devices.

[0051] Finally, it should be noted that the above embodiments are merely examples for clarity of explanation. The present invention includes, but is not limited to, the above embodiments. An exhaustive list of all possible implementations is not necessary and cannot be provided here. Those skilled in the art will appreciate that other variations or modifications can be made based on the above description. Any implementation that meets the requirements of the present invention falls within the scope of protection of the present invention.

Claims

1. A semiconductor discrete device reliability test circuit, characterized in that: The following specific design methods are adopted: (1) Design device aging circuit module based on the characteristics of semiconductor discrete devices; (2) A constant current limiting circuit is set in the connection path between the device aging circuit module and the power supply to replace the traditional fuse and improve the response speed; (3) A device aging status display circuit is provided in the connection path between the device aging circuit and the power supply, and different displays are provided according to the quality change of the device during the aging process to improve the intuitive monitoring capability of the process. The display includes sound or visual perception; (4) A current flow control circuit is set in the connection path between the device aging circuit and the power supply to perform aging tests on the functions of each direction of the bidirectional or multidirectional device; (5) The device aging circuit module is connected to the positive power supply and the negative power supply or the ground with symmetrical polarity through the constant current limiting circuit and the device aging status display circuit. The direction of the current flowing through the device can be changed by reversing the polarity of the power supply; The negative power supply includes ground; The reliability test circuit using the design method includes: a positive power supply, a negative power supply, a positive constant current module, a negative constant current module, a forward conducting module, a reverse conducting module, a forward display module, a reverse display module, and a circuit module; The positive power supply is connected to the positive electrode of the forward constant current module, the negative electrode of the forward constant current module is connected to the positive electrode of the forward display module, and the negative electrode of the forward display module is connected to the connection terminal set by the circuit module; The positive power supply is connected to the negative terminal of the reverse conducting module, and the positive terminal of the reverse conducting module is connected to the negative terminal of the forward display module; The negative power supply is connected to the positive electrode of the reverse constant current module, the negative electrode of the reverse constant current module is connected to the positive electrode of the reverse display module, and the negative electrode of the reverse display module is connected to the connection terminal set by the circuit module; The negative power supply is connected to the negative terminal of the forward conducting module, and the positive terminal of the forward conducting module is connected to the negative terminal of the reverse display module; The negative power supply and the positive power supply can be swapped according to the bidirectional polarity of the device under test; The circuit module includes a device under test; The positive power supply is a DC power supply, and the negative power supply is grounded; The forward constant current module and the negative constant current module use constant current diodes; The forward conducting module and the reverse conducting module use rectifier diodes; The circuit module includes related connecting wires, a device under test fixture and a device under test; By swapping the power interface, the current direction can be changed; For the high temperature reverse bias test of multi-channel array devices, several unit circuits are connected in parallel to realize the high temperature reverse bias test of the multi-channel array devices.

2. A semiconductor discrete device reliability test circuit as claimed in claim 1, characterized in that: The specific circuit is: The anode of the constant current diode Q1 is connected to the cathode of the rectifier diode D1 and the Port1 end of the unit circuit, the cathode of the constant current diode Q1 is connected to the anode of the LED light-emitting electrode tube D3, the cathode of the LED light-emitting electrode tube D3 is connected to the anode of the rectifier diode D1 and one end of the device under test; the other end of the device under test is connected to the anode of the rectifier diode D2 and the cathode of the LED light-emitting electrode tube D4, the anode of the LED light-emitting electrode tube D4 is connected to the cathode of the constant current diode Q2, the anode of the constant current diode Q2 is connected to the cathode of the rectifier diode D2 and the Port2 end of the unit circuit.

3. A semiconductor discrete device reliability test circuit as claimed in claim 1, characterized in that: The device to be tested is: a unidirectional transient voltage suppressor diode, a bidirectional transient voltage suppressor diode, a unidirectional TVS array, a bidirectional TVS array, a MOSFET tube, an IGBT tube or a triode.

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