magnetic sensor

Abstract

A magnetic sensor according to the present application includes a substrate having an upper surface, an insulating layer having an inclined surface, and a magnetic detection element disposed on the inclined surface. The magnetic detection element has a first side surface and a second side surface. The first side surface is located in front of the magnetic detection element in a first direction along one direction of the inclined surface. The second side surface is located in front of the magnetic detection element in a second direction along another direction of the inclined surface. The magnetic detection element includes a first variation portion in which, along a long side direction of the magnetic detection element, a distance between an upper end of the first side surface and an upper end of the second side surface becomes smaller.

Description

TECHNICAL FIELD

[0001] The present application relates to a magnetic sensor provided with a magnetic detection element disposed on an inclined surface. BACKGROUND

[0002] In recent years, magnetic sensors using a magnetic resistance effect element are used for various purposes. In a system including a magnetic sensor, it is sometimes desired to detect a magnetic field including a component in a direction perpendicular to a surface of a substrate by a magnetic resistance effect element disposed on the substrate. In this case, by disposing a soft magnetic body that converts a magnetic field in a direction perpendicular to the surface of the substrate into a magnetic field in a direction parallel to the surface of the substrate, or by disposing a magnetic resistance effect element on an inclined surface formed on the substrate, it is possible to detect a magnetic field including a component in a direction perpendicular to the surface of the substrate.

[0003] As the magnetic resistance effect element, for example, a spin valve type magnetic resistance effect element is used. The spin valve type magnetic resistance effect element has a magnetization fixed layer having magnetization whose direction is fixed, a free layer having magnetization whose direction can be changed according to a direction of an applied magnetic field, and a gap layer disposed between the magnetization fixed layer and the free layer. In addition, as for the free layer, a technique of using a coil to set / reset a direction of magnetization of the free layer is known.

[0004] In Japanese Patent Application Publication No. 2006-194733, a magnetic sensor provided with a magnetic resistance effect element formed on an inclined surface is disclosed. In Japanese Patent Application Publication No. 2001-516031, a technique of using a coil to set / reset a magnetic domain of a magnetic resistance element is disclosed.

[0005] In a case where a magnetic resistance effect element is formed on an inclined surface as in the magnetic sensor disclosed in Japanese Patent Application Publication No. 2006-194733, and a direction of magnetization of a free layer is set to a prescribed direction using the technique disclosed in Japanese Patent Application Publication No. 2001-516031, it is necessary to increase a strength of a magnetic field for setting the direction of magnetization of the free layer to the prescribed direction to some extent depending on a shape of the magnetic resistance effect element. SUMMARY

[0006] An object of the present application is to provide a magnetic sensor in which a strength of a magnetic field for setting / resetting magnetization of a magnetic detection element can be reduced in a magnetic sensor provided with the magnetic detection element disposed on an inclined surface.

[0007] The magnetic sensor of the present application includes a substrate having a reference plane, a support member disposed on the substrate and having an inclined surface inclined with respect to the reference plane, and a magnetic detection element disposed on the inclined surface and having a shape elongated in one direction. The magnetic detection element has first and second side surfaces located on both sides in a short side direction of the magnetic detection element and each having an upper end located at a distal end from the reference plane. The first side surface is located in front in a first direction along the inclined surface and distal from the reference plane. The second side surface is located in front in a second direction along the inclined surface and proximal to the reference plane. The magnetic detection element includes a first variation portion in which at least a portion of each of the upper end of the first side surface and the upper end of the second side surface is linear and the interval between the upper end of the first side surface and the upper end of the second side surface is smaller in a long side direction of the magnetic detection element.

[0008] In the magnetic sensor of the present application, the magnetic detection element includes the first variation portion. Thus, according to the present application, in the magnetic sensor including the magnetic detection element disposed on the inclined surface, the strength of the magnetic field for setting / resetting the magnetization of the magnetic detection element can be reduced.

[0009] Other objects, features and advantages of the present application will become more fully apparent from the following description. BRIEF DESCRIPTION OF DRAWINGS

[0010] Figure 1 is a perspective view showing a magnetic sensor of a first embodiment of the present application.

[0011] Figure 2 is a functional block diagram showing the structure of a magnetic sensor device including the magnetic sensor of the first embodiment of the present application.

[0012] Figure 3 is a circuit diagram showing the circuit structure of a first detection circuit of the first embodiment of the present application.

[0013] Figure 4 is a circuit diagram showing the circuit structure of a second detection circuit of the first embodiment of the present application.

[0014] Figure 5 is a plan view showing a part of the magnetic sensor of the first embodiment of the present application.

[0015] Figure 6 is a sectional view showing a part of the magnetic sensor of the first embodiment of the present application.

[0016] Figure 7 is a side view showing a magnetoresistive effect element of the first embodiment of the present application.

[0017] Figure 8is a cross-sectional view showing a main part of a magnetic sensor of the first embodiment of the present application.

[0018] Figure 9 is a cross-sectional view showing a first example of a shape of an upper surface of a magnetoresistive effect element of the first embodiment of the present application.

[0019] Figure 10 is a cross-sectional view showing a second example of a shape of an upper surface of a magnetoresistive effect element of the first embodiment of the present application.

[0020] Figure 11 is a cross-sectional view showing a third example of a shape of an upper surface of a magnetoresistive effect element of the first embodiment of the present application.

[0021] Figure 12 is a plan view showing a first example of shapes of first and second side surfaces of a magnetoresistive effect element of the first embodiment of the present application.

[0022] Figure 13 is a plan view showing a second example of shapes of first and second side surfaces of a magnetoresistive effect element of the first embodiment of the present application.

[0023] Figure 14 is a plan view showing a third example of shapes of first and second side surfaces of a magnetoresistive effect element of the first embodiment of the present application.

[0024] Figure 15 is a cross-sectional view showing a part of a magnetic sensor of the second embodiment of the present application. DETAILED DESCRIPTION

[0025] [First Embodiment]

[0026] Hereinafter, an embodiment of the present application will be described in detail with reference to the drawings. First, referring to Figure 1 and Figure 2 , the structure of a magnetic sensor of the first embodiment of the present application will be described. Figure 1 is a perspective view showing a magnetic sensor of the present embodiment. Figure 2 is a functional block diagram showing the structure of a magnetic sensor device including the magnetic sensor of the present embodiment.

[0027] As shown in Figure 1 , the magnetic sensor 1 has a form of a rectangular parallelepiped-shaped chip. The magnetic sensor 1 has an upper surface la and a lower surface which are located on opposite sides of each other, and four side surfaces which connect the upper surface la and the lower surface. In addition, the magnetic sensor 1 has a plurality of electrode pads provided on the upper surface la.

[0028] Here, referring to Figure 1The reference coordinate system of this embodiment will be explained. The reference coordinate system is a coordinate system based on the magnetic sensor 1, and is an orthogonal coordinate system defined by three axes. In the reference coordinate system, the X direction, Y direction, and Z direction are defined. The X direction, Y direction, and Z direction are orthogonal to each other. In this embodiment, specifically, the direction perpendicular to the upper surface 1a of the magnetic sensor 1, that is, the direction from the lower surface of the magnetic sensor 1 towards the upper surface 1a, is defined as the Z direction. Furthermore, the direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. The three axes of the reference coordinate system are defined as the axis parallel to the X direction, the axis parallel to the Y direction, and the axis parallel to the Z direction.

[0029] Hereinafter, the position in front of the reference position in the Z direction will be referred to as "above," and the position on the opposite side of the reference position relative to "above" will be referred to as "below." Furthermore, regarding the components of the magnetic sensor 1, the surface located at the Z-direction end will be referred to as the "upper surface," and the surface located at the -Z-direction end will be referred to as the "lower surface." Additionally, the expression "when viewed from the Z-direction" refers to viewing the object from a position separated along the Z-direction.

[0030] like Figure 2 As shown, the magnetic sensor 1 includes a first detection circuit 20 and a second detection circuit 30. Each of the first and second detection circuits 20 and 30 includes a plurality of magnetic detection elements, configured to detect the magnetic field of the target object and generate at least one detection signal. In this embodiment, in particular, the plurality of magnetic detection elements are a plurality of magnetoresistive effect elements. Hereinafter, the magnetoresistive effect elements will be referred to as MR elements.

[0031] The multiple detection signals generated by the first and second detection circuits 20 and 30 are processed by the processor 40. The magnetic sensor 1 and the processor 40 constitute the magnetic sensor device 100. The processor 40 is configured to process the multiple detection signals generated by the first and second detection circuits 20 and 30 to generate a first detection value and a second detection value that correspond to components of the magnetic field in two mutually different directions at a predetermined reference position. In this embodiment, specifically, the two mutually different directions are a direction parallel to the XY plane and a direction parallel to the Z direction. The processor 40 is, for example, constructed from an application-specific integrated circuit (ASIC).

[0032] The processor 40 can also be included in a support body that supports the magnetic sensor 1, for example. The support body has a plurality of electrode pads. The first and second detection circuits 20, 30 and the processor 40 are connected via the plurality of electrode pads of the magnetic sensor 1, the plurality of electrode pads of the support body, and a plurality of bonding wires, for example. In a case where the plurality of electrode pads of the magnetic sensor 1 are provided on the upper surface la of the magnetic sensor 1, the magnetic sensor 1 can also be mounted on the upper surface of the support body in a posture in which the lower surface of the magnetic sensor 1 opposes the upper surface of the support body.

[0033] Next, the first and second detection circuits 20, 30 will be described with reference to Figures 3-6 Figure 3 is a circuit diagram showing the circuit structure of the first detection circuit 20. Figure 4 is a circuit diagram showing the circuit structure of the second detection circuit 30. Figure 5 is a plan view showing a portion of the magnetic sensor 1. Figure 6 is a cross-sectional view showing a portion of the magnetic sensor 1.

[0034] Here, as shown in Figure 5 , the U direction and the V direction are defined as follows. The U direction is a direction that is rotated from the X direction toward the -Y direction. The V direction is a direction that is rotated from the Y direction toward the X direction. In the present embodiment, in particular, the U direction is set to a direction that is rotated from the X direction toward the -Y direction by an amount of a, and the V direction is set to a direction that is rotated from the Y direction toward the X direction by an amount of a. Further, a is an angle that is greater than 0° and less than 90°. In one example, a is 45°. In addition, the direction opposite to the U direction is set to the -U direction, and the direction opposite to the V direction is set to the -V direction.

[0035] In addition, as shown in Figure 6 , the W1 direction and the W2 direction are defined as follows. The W1 direction is a direction that is rotated from the V direction toward the -Z direction. The W2 direction is a direction that is rotated from the V direction toward the Z direction. In the present embodiment, in particular, the W1 direction is set to a direction that is rotated from the V direction toward the -Z direction by an amount of β, and the W2 direction is set to a direction that is rotated from the V direction toward the Z direction by an amount of β. Further, β is an angle that is greater than 0° and less than 90°. In addition, the direction opposite to the W1 direction is set to the -W1 direction, and the direction opposite to the W2 direction is set to the -W2 direction. The W1 direction and the W2 direction are orthogonal to the U direction, respectively.

[0036] The first detection circuit 20 is configured to detect a component in a direction parallel to the W1 direction of the object magnetic field, and to generate at least one first detection signal having a corresponding relationship with the component. The second detection circuit 30 is configured to detect a component in a direction parallel to the W2 direction of the object magnetic field, and to generate at least one second detection signal having a corresponding relationship with the component. ​

[0037] As shown in FIG. 1, the first detection circuit 20 includes a power supply terminal V2, a ground terminal G2, signal output terminals E21, E22, a first resistance portion R21, a second resistance portion R22, a third resistance portion R23, and a fourth resistance portion R24. The plurality of MR elements of the first detection circuit 20 constitute the first to fourth resistance portions R21, R22, R23, and R24. Figure 3

[0038] The first resistance portion R21 is provided between the power supply terminal V2 and the signal output terminal E21. The second resistance portion R22 is provided between the signal output terminal E21 and the ground terminal G2. The third resistance portion R23 is provided between the signal output terminal E22 and the ground terminal G2. The fourth resistance portion R24 is provided between the power supply terminal V2 and the signal output terminal E22.

[0039] As shown in FIG. 1, the second detection circuit 30 includes a power supply terminal V3, a ground terminal G3, signal output terminals E31, E32, a first resistance portion R31, a second resistance portion R32, a third resistance portion R33, and a fourth resistance portion R34. The plurality of MR elements of the second detection circuit 30 constitute the first to fourth resistance portions R31, R32, R33, and R34. Figure 4

[0040] The first resistance portion R31 is provided between the power supply terminal V3 and the signal output terminal E31. The second resistance portion R32 is provided between the signal output terminal E31 and the ground terminal G3. The third resistance portion R33 is provided between the signal output terminal E32 and the ground terminal G3. The fourth resistance portion R34 is provided between the power supply terminal V3 and the signal output terminal E32.

[0041] A voltage or a current of a prescribed magnitude is applied to each of the power supply terminals V2, V3. Each of the ground terminals G2, G3 is grounded.

[0042] Hereinafter, the plurality of MR elements of the first detection circuit 20 will be referred to as a plurality of first MR elements 50B, and the plurality of MR elements of the second detection circuit 30 will be referred to as a plurality of second MR elements 50C. The first and second detection circuits 20, 30 are constituent elements of the magnetic sensor 1, and thus it can also be said that the magnetic sensor 1 includes the plurality of first MR elements 50B and the plurality of second MR elements 50C. Note that the symbol 50 is attached to any MR element.

[0043] Figure 7 ​​is a side view showing the MR element 50. The MR element 50 is a spin valve type MR element including a plurality of magnetic layers. The MR element 50 has a magnetization fixed layer 52 having a magnetization whose direction is fixed, a free layer 54 having a magnetization whose direction can change according to the direction of an object magnetic field, and a gap layer 53 disposed between the magnetization fixed layer 52 and the free layer 54. The MR element 50 can also be a TMR (Tunneling Magneto Resistance Effect) element, or a GMR (Giant Magneto Resistance Effect) element. In the TMR element, the gap layer 53 is a tunnel barrier layer. In the GMR element, the gap layer 53 is a non-magnetic conductive layer. In the MR element 50, the resistance value changes according to the angle formed by the direction of the magnetization of the free layer 54 with respect to the direction of the magnetization of the magnetization fixed layer 52, and the resistance value becomes the minimum value when the angle is 0°, and the resistance value becomes the maximum value when the angle is 180°. In each MR element 50, the free layer 54 has shape anisotropy in which the easy axis direction becomes a direction orthogonal to the direction of the magnetization of the magnetization fixed layer 52. Further, as a means for setting a prescribed direction to the easy axis of the free layer 54, a magnet that applies a bias magnetic field to the free layer 54 can also be used. The magnetization fixed layer 52, the gap layer 53, and the free layer 54 are sequentially stacked.

[0044] The MR element 50 also has an anti-ferromagnetic layer 51. The anti-ferromagnetic layer 51, the magnetization fixed layer 52, the gap layer 53, and the free layer 54 are sequentially stacked. The anti-ferromagnetic layer 51 is composed of an anti-ferromagnetic material, and generates exchange coupling with the magnetization fixed layer 52 to fix the direction of the magnetization of the magnetization fixed layer 52. Further, the magnetization fixed layer 52 can also be a so-called self-oxide type fixed layer (Synthetic Ferri Pinned layer, SFP layer). The self-oxide type fixed layer has a laminated ferromagnetic structure in which a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer are stacked, and is formed by anti-ferromagnetically coupling the two ferromagnetic layers. In the case where the magnetization fixed layer 52 is a self-oxide type fixed layer, the anti-ferromagnetic layer 51 can also be omitted.

[0045] Further, the configuration of the layers 51 to 54 of the MR element 50 can also be reversed upside down from the configuration shown in Figure 7 .

[0046] In Figure 3 and Figure 4 , a solid arrow indicates the direction of the magnetization of the magnetization fixed layer 52 of the MR element 50. In addition, a hollow arrow indicates the direction of the magnetization of the free layer 54 of the MR element 50 in the case where the object magnetic field is not applied to the MR element 50.

[0047] In Figure 3In the illustrated example, the direction of magnetization of the magnetization fixed layer 52 of each of the first and third resistance portions R21, R23 is the W1 direction. The direction of magnetization of the magnetization fixed layer 52 of each of the second and fourth resistance portions R22, R24 is the -W1 direction. In addition, each of the plurality of first MR elements 50B has shape anisotropy in which the direction of the easy magnetization axis becomes a direction parallel to the U direction. In a case where no object magnetic field is applied to the first MR element 50B, the direction of magnetization of the free layer 54 of each of the first and second resistance portions R21, R22 is the U direction. In the above case, the direction of magnetization of the free layer 54 of each of the third and fourth resistance portions R23, R24 is the -U direction.

[0048] In Figure 4 In the illustrated example, the direction of magnetization of the magnetization fixed layer 52 of each of the first and third resistance portions R31, R33 is the W2 direction. The direction of magnetization of the magnetization fixed layer 52 of each of the second and fourth resistance portions R32, R34 is the -W2 direction. In addition, each of the plurality of second MR elements 50C has shape anisotropy in which the direction of the easy magnetization axis becomes a direction parallel to the U direction. In a case where no object magnetic field is applied to the second MR element 50C, the direction of magnetization of the free layer 54 of each of the first and second resistance portions R31, R32 is the U direction. In the above case, the direction of magnetization of the free layer 54 of each of the third and fourth resistance portions R33, R34 is the -U direction.

[0049] The magnetic sensor 1 includes a magnetic field generator configured to apply a magnetic field of a prescribed direction to the free layer 54 of each of the plurality of first MR elements 50B and the plurality of second MR elements 50C. In the present embodiment, the magnetic field generator includes a coil 80 configured to apply a magnetic field of a prescribed direction to the free layer 54 of each of the plurality of first MR elements 50B and the plurality of second MR elements 50C.

[0050] Furthermore, from the viewpoint of the manufacturing precision of the MR element 50 and the like, the direction of magnetization of the magnetization fixed layer 52 and the direction of the easy magnetization axis of the free layer 54 can also slightly deviate from the above-described directions. In addition, the magnetization of the magnetization fixed layer 52 can also be configured to include a magnetization component having the above-described direction as a principal component. In this case, the direction of magnetization of the magnetization fixed layer 52 becomes the above-described direction or approximately the above-described direction.

[0051] In the present embodiment, the MR element 50 is configured so that a current flows in the stacking direction of the plurality of magnetic layers, that is, the magnetization fixed layer 52 and the free layer 54. As described later, the magnetic sensor 1 is provided with a lower electrode and an upper electrode for causing a current to flow in the MR element 50. The MR element 50 is disposed between the lower electrode and the upper electrode.

[0052] Hereinafter, the Figure 5 and Figure 6The detailed structure of the magnetic sensor 1 will be described. Figure 6 A part of the cross section at the position indicated by the line 6-6 is shown. Figure 5 A part of the cross section at the position indicated by the line 6-6 is shown.

[0053] The magnetic sensor 1 includes a substrate 301 having an upper surface 301a, insulating layers 302, 303, 304, 305, 307, 308, 309, 310, a plurality of lower electrodes 61B, a plurality of lower electrodes 61C, a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, a plurality of lower coil elements 81, and a plurality of upper coil elements 82. The upper surface 301a of the substrate 301 is parallel to the XY plane. The Z direction is also one direction perpendicular to the upper surface 301a of the substrate 301. Further, the coil element is a part of a winding of a coil.

[0054] The insulating layer 302 is disposed on the substrate 301. The plurality of lower coil elements 81 is disposed on the insulating layer 302. The insulating layer 303 is disposed around the plurality of lower coil elements 81 on the insulating layer 302. The insulating layers 304, 305 are sequentially stacked on the plurality of lower coil elements 81 and the insulating layer 303.

[0055] The plurality of lower electrodes 61B and the plurality of lower electrodes 61C are disposed on the insulating layer 305. The insulating layer 307 is disposed around the plurality of lower electrodes 61B and the plurality of lower electrodes 61C on the insulating layer 305. The plurality of first MR elements 50B is disposed on the plurality of lower electrodes 61B. The plurality of second MR elements 50C is disposed on the plurality of lower electrodes 61C. The insulating layer 308 is disposed around the plurality of first MR elements 50B and the plurality of second MR elements 50C on the plurality of lower electrodes 61B, the plurality of lower electrodes 61C, and the insulating layer 307. The plurality of upper electrodes 62B is disposed on the plurality of first MR elements 50B and the insulating layer 308. The plurality of upper electrodes 62C is disposed on the plurality of second MR elements 50C and the insulating layer 308. The insulating layer 309 is disposed around the plurality of upper electrodes 62B and the plurality of upper electrodes 62C on the insulating layer 308.

[0056] The insulating layer 310 is disposed on the plurality of upper electrodes 62B, the plurality of upper electrodes 62C, and the insulating layer 309. The plurality of upper coil elements 82 is disposed on the insulating layer 310. The magnetic sensor 1 can further include an insulating layer not shown that covers the plurality of upper coil elements 82 and the insulating layer 310.

[0057] The magnetic sensor 1 includes a support member that supports a plurality of first MR elements 50B and a plurality of second MR elements 50C. The support member has at least one inclined surface that is inclined with respect to an upper surface 301a of a substrate 301. In the present embodiment, in particular, the support member is constituted by an insulating layer 305. Further, in Figure 5 In the present embodiment, among the constituent elements of the magnetic sensor 1, the insulating layer 305, the plurality of first MR elements 50B, the plurality of second MR elements 50C, and the plurality of upper coil elements 82 are shown.

[0058] The insulating layer 305 has a plurality of convex surfaces 305c that each extend in a direction (Z direction) away from the upper surface 301a of the substrate 301. Each of the plurality of convex surfaces 305c extends in a direction parallel to the U direction. The overall shape of the convex surface 305c is a semicylindrical curved surface constituted by moving the curved shape (arched shape) of the convex surface 305c shown in Figure 6

[0059] Each of the plurality of convex surfaces 305c has an upper end portion that is farthest from the upper surface 301a of the substrate 301. In the present embodiment, the upper end portion of each of the plurality of convex surfaces 305c is an upper end portion that extends in a direction parallel to the U direction. Here, one of the plurality of convex surfaces 305c is focused on. The convex surface 305c includes a first inclined surface 305a and a second inclined surface 305b. The first inclined surface 305a is a surface of the convex surface 305c that is on the V direction side from the upper end portion of the convex surface 305c. The second inclined surface 305b is a surface of the convex surface 305c that is on the -V direction side from the upper end portion of the convex surface 305c. In Figure 5 In the present embodiment, the boundaries of the first inclined surface 305a and the second inclined surface 305b are indicated by a dashed line.

[0060] The upper end portion of the convex surface 305c can also be the boundary between the first inclined surface 305a and the second inclined surface 305b. In this case, Figure 5 The dashed line shown in FIG. 6 indicates the upper end portion of the convex surface 305c.

[0061] The upper surface 301a of the substrate 301 is parallel to the XY plane. The first inclined surface 305a and the second inclined surface 305b are each inclined with respect to the upper surface 301a of the substrate 301, that is, the XY plane. In a cross section perpendicular to the upper surface 301a of the substrate 301, the interval between the first inclined surface 305a and the second inclined surface 305b decreases as it moves away from the upper surface 301a of the substrate 301.

[0062] ​In this embodiment, there are a plurality of convex surfaces 305c, and therefore there are also a plurality of first inclined surfaces 305a and a plurality of second inclined surfaces 305b, respectively. The insulating layer 305 has a plurality of first inclined surfaces 305a and a plurality of second inclined surfaces 305b.

[0063] The insulating layer 305 also has flat surfaces 305d present around the plurality of convex surfaces 305c. The flat surfaces 305d are surfaces parallel to the upper surface 301a of the substrate 301. Each of the plurality of convex surfaces 305c protrudes in the Z direction from the flat surfaces 305d. In this embodiment, the plurality of convex surfaces 305c are arranged at prescribed intervals. Therefore, between two convex surfaces 305c adjacent in the V direction, there is a flat surface 305d.

[0064] The insulating layer 305 includes a plurality of protruding portions each protruding in the Z direction, and flat portions present around the plurality of protruding portions. Each of the plurality of protruding portions extends in a direction parallel to the U direction, and has a convex surface 305c. In addition, the plurality of protruding portions are arranged at prescribed intervals in a direction parallel to the V direction. The thickness (dimension in the Z direction) of the flat portions is substantially constant. In addition, the insulating layer 304 has a substantially constant thickness (dimension in the Z direction), and is formed along the lower surface of the insulating layer 305.

[0065] The plurality of lower electrodes 61B are arranged on the plurality of first inclined surfaces 305a. The plurality of lower electrodes 61C are arranged on the plurality of second inclined surfaces 305b. As described above, the first inclined surfaces 305a and the second inclined surfaces 305b each are inclined with respect to the XY plane, the upper surface 301a of the substrate 301, and therefore the upper surfaces of the plurality of lower electrodes 61B and the upper surfaces of the plurality of lower electrodes 61C are also inclined with respect to the XY plane. Therefore, it can be said that the plurality of first MR elements 50B and the plurality of second MR elements 50C are arranged on inclined surfaces inclined with respect to the XY plane. The insulating layer 305 is a member for supporting each of the plurality of first MR elements 50B and the plurality of second MR elements 50C in a manner inclined with respect to the XY plane.

[0066] In addition, in this embodiment, the first inclined surfaces 305a are curved surfaces. Therefore, the first MR elements 50B are curved along the curved surfaces (first inclined surfaces 305a). In this embodiment, for convenience, the directions of magnetization of the magnetization fixed layers 52 of the first MR elements 50B are defined as straight line directions as described above. The directions of magnetization of the magnetization fixed layers 52 of the first MR elements 50B, the W1 direction and the -W1 direction, are also directions in which the wires extending from portions in the first inclined surfaces 305a in the vicinity of the first MR elements 50B.

[0067] Likewise, in the present embodiment, the second inclined surface 305b is a curved surface. Therefore, the second MR element 50C is curved along the curved surface (the second inclined surface 305b). In the present embodiment, for the sake of convenience, the direction of magnetization of the magnetization fixed layer 52 of the second MR element 50C is defined as the straight line direction as described above. The direction of magnetization of the magnetization fixed layer 52 of the second MR element 50C, that is, the W2 direction and the -W2 direction, is also the direction in which the wire extending from the portion in the second inclined surface 305b in the vicinity of the second MR element 50C is extended.

[0068] As shown in FIG. 6, the plurality of first MR elements 50B are arranged in a manner that a plurality of the first MR elements 50B are juxtaposed in the U direction and the V direction, respectively. The plurality of first MR elements 50B are arranged in one column over one first inclined surface 305a. Likewise, the plurality of second MR elements 50C are arranged in a manner that a plurality of the second MR elements 50C are juxtaposed in the U direction and the V direction, respectively. The plurality of second MR elements 50C are arranged in one column over one second inclined surface 305b. In the present embodiment, the column of the plurality of first MR elements 50B and the column of the plurality of second MR elements 50C are alternately arranged in a direction parallel to the V direction. Figure 5

[0069] Further, when viewed from the Z direction, one first MR element 50B and one second MR element 50C that are adjacent to each other can be staggered or can not be staggered in a direction parallel to the U direction. In addition, when viewed from the Z direction, two first MR elements 50B that are adjacent to each other with one second MR element 50C therebetween can be staggered or can not be staggered in a direction parallel to the U direction. In addition, when viewed from the Z direction, two second MR elements 50C that are adjacent to each other with one first MR element 50B therebetween can be staggered or can not be staggered in a direction parallel to the U direction.

[0070] The plurality of first MR elements 50B are connected in series by the plurality of lower electrodes 61B and the plurality of upper electrodes 62B. Here, the connection method of the plurality of first MR elements 50B will be described in detail with reference to FIG. 7. Figure 7 Figure 7 In FIG. 7, the symbol 61 denotes a lower electrode corresponding to an arbitrary MR element 50, and the symbol 62 denotes an upper electrode corresponding to the arbitrary MR element 50. As shown in FIG. 7, each lower electrode 61 has an elongated shape. A gap is formed between two lower electrodes 61 that are adjacent to each other in the longitudinal direction of the lower electrode 61. On the upper surface of the lower electrode 61, an MR element 50 is disposed in the vicinity of each of the both ends in the longitudinal direction. In addition, each upper electrode 62 has an elongated shape and electrically connects two MR elements 50 that are disposed on two lower electrodes 61 that are adjacent to each other in the longitudinal direction of the lower electrode 61 to each other. Figure 7

[0071] ​​​Although not shown, one MR element 50 located at one end of a column of the plurality of MR elements 50 arranged in one column is connected to another MR element 50 located at one end of a column of other plurality of MR elements 50 in a direction crossing the longitudinal direction of the lower electrode 61. The two MR elements 50 are connected to each other by an electrode not shown. The electrode not shown can also be an electrode connecting the lower surfaces of the two MR elements 50 to each other or the upper surfaces of the two MR elements 50 to each other.

[0072] In Figure 7 In the case where the MR element 50 shown is the first MR element 50B, Figure 7 The lower electrode 61 shown corresponds to the lower electrode 61B, Figure 7 The upper electrode 62 shown corresponds to the upper electrode 62B. In this case as well, the longitudinal direction of the lower electrode 61 becomes a direction parallel to the U direction.

[0073] Similarly, the plurality of second MR elements 50C are connected in series by the plurality of lower electrodes 61C and the plurality of upper electrodes 62C. The description of the connection method of the plurality of first MR elements 50B described above also applies to the connection method of the plurality of second MR elements 50C. In Figure 7 In the case where the MR element 50 shown is the second MR element 50C, Figure 7 The lower electrode 61 shown corresponds to the lower electrode 61C, Figure 7 The upper electrode 62 shown corresponds to the upper electrode 62C. In this case as well, the longitudinal direction of the lower electrode 61 becomes a direction parallel to the U direction.

[0074] Each of the plurality of upper coil elements 82 extends in a direction parallel to the Y direction. In addition, the plurality of upper coil elements 82 are arranged in a manner in which they are juxtaposed in the X direction. In the present embodiment, in particular, two upper coil elements 82 overlap each other in each of the plurality of first MR elements 50B and the plurality of second MR elements 50C when viewed from the Z direction.

[0075] Each of the plurality of lower coil elements 81 extends in a direction parallel to the Y direction. In addition, the plurality of lower coil elements 81 are arranged in a manner in which they are juxtaposed in the X direction. The shape and arrangement of the plurality of lower coil elements 81 can be the same as or different from the shape and arrangement of the plurality of upper coil elements 82. Figure 5 In Figure 6 In the example shown, the size of each of the plurality of lower coil elements 81 in the X direction is smaller than the size of each of the plurality of upper coil elements 82 in the X direction. In addition, the interval between two lower coil elements 81 adjacent in the X direction is smaller than the interval between two upper coil elements 82 adjacent in the X direction.

[0076] In Figure 5 In Figure 6In the illustrated example, the plurality of lower coil elements 81 and the plurality of upper coil elements 82 are electrically connected in a manner to constitute the coil 80 that applies a magnetic field in a direction parallel to the X direction to the free layers 54 of the plurality of first MR elements 50B and the plurality of second MR elements 50C, respectively. In addition, the coil 80 can also be configured, for example, to apply a magnetic field in the X direction to the free layers 54 of the first and second resistance portions R21, R22 of the first detection circuit 20 and the first and second resistance portions R31, R32 of the second detection circuit 30, and to apply a magnetic field in the -X direction to the free layers 54 of the third and fourth resistance portions R23, R24 of the first detection circuit 20 and the third and fourth resistance portions R33, R34 of the second detection circuit 30. In addition, the coil 80 can also be controlled by the processor 40.

[0077] Next, the first and second detection signals will be described. First, the first detection signal will be described with reference to FIG. 4. Figure 3 The first detection signal will be described. When the strength of the component of the object magnetic field in the direction parallel to the Wl direction changes, the resistance values of the resistance portions R21 to R24 of the first detection circuit 20 each change in such a manner that the resistance values of the resistance portions R21, R23 increase and the resistance values of the resistance portions R22, R24 decrease, or the resistance values of the resistance portions R21, R23 decrease and the resistance values of the resistance portions R22, R24 increase. As a result, the potentials of the signal output terminals E21, E22 each change. The first detection circuit 20 is configured to generate a signal corresponding to the potential of the signal output terminal E21 as the first detection signal S21, and to generate a signal corresponding to the potential of the signal output terminal E22 as the first detection signal S22.

[0078] Next, the second detection signal will be described with reference to FIG. 5. Figure 4 The second detection signal will be described. When the strength of the component of the object magnetic field in the direction parallel to the W2 direction changes, the resistance values of the resistance portions R31 to R34 of the second detection circuit 30 each change in such a manner that the resistance values of the resistance portions R31, R33 increase and the resistance values of the resistance portions R32, R34 decrease, or the resistance values of the resistance portions R31, R33 decrease and the resistance values of the resistance portions R32, R34 increase. As a result, the potentials of the signal output terminals E31, E32 each change. The second detection circuit 30 is configured to generate a signal corresponding to the potential of the signal output terminal E31 as the second detection signal S31, and to generate a signal corresponding to the potential of the signal output terminal E32 as the second detection signal S32.

[0079] Next, the operation of the processor 40 will be described. The processor 40 is configured to generate a first detection value and a second detection value based on the first detection signals S21, S22 and the second detection signals S31, S32. The first detection value is a detection value corresponding to the component of the object magnetic field in the direction parallel to the V direction. The second detection value is a detection value corresponding to the component of the object magnetic field in the direction parallel to the Z direction. Hereinafter, the first detection value will be denoted by the symbol Sv, and the second detection value will be denoted by the symbol Sz.

[0080] The processor 40 generates the first and second detection values Sv, Sz, for example, as follows. The processor 40 first generates a value S1 by an operation including taking the difference S21-S22 of the first detection signal S21 and the first detection signal S22, and generates a value S2 by an operation including taking the difference S31-S32 of the second detection signal S31 and the second detection signal S32. Next, the processor 40 calculates values S3, S4 using the following equations (1), (2).

[0081] S3 = (S2 + S1) / (2 cos α)... (1)

[0082] S4 = (S2 - S1) / (2 sin α)... (2)

[0083] The first detection value Sv can also be the value S3 itself, or a value to which a prescribed modification such as gain adjustment and offset adjustment has been applied to the value S3. Similarly, the second detection value Sz can also be the value S4 itself, or a value to which a prescribed modification such as gain adjustment and offset adjustment has been applied to the value S4.

[0084] Next, the structural features of the magnetic sensor 1 of the present embodiment will be described. Figure 8 is a cross-sectional view showing the main parts of the magnetic sensor 1.

[0085] Figure 8 A cross section intersecting the MR element 50 disposed on any of the inclined surfaces 305e, i.e., a cross section parallel to the VZ plane, is shown. Hereinafter, the cross section parallel to the VZ plane will be referred to as the VZ cross section. Figure 8 The VZ cross section shown can also be a cross section intersecting the MR element 50 disposed on any of the inclined surfaces 305e, i.e., a cross section parallel to the VZ plane, is shown. Hereinafter, the cross section parallel to the VZ plane will be referred to as the VZ cross section. Figure 6 Similarly, the VZ cross section is a cross section of the MR element 50 viewed from a position in front of the U direction. In this case, the MR element 50, the lower electrode 61, and the inclined surface 305e correspond to the first MR element 50B, the lower electrode 61B, and the first inclined surface 305a, respectively. Alternatively, Figure 8The VZ cross section shown can also be a VZ cross section that views the cross section of the MR element 50 from a position in front of the -U direction. In this case, the MR element 50, the lower electrode 61, and the inclined surface 305e correspond to the second MR element 50C, the lower electrode 61C, and the second inclined surface 305b, respectively.

[0086] Here, as shown in Figure 8 , a first direction D1 and a second direction D2 parallel to the VZ plane are defined. The first direction D1 is a direction along the inclined surface 305e and away from the reference plane. In the present embodiment, the upper surface 301a of the substrate 301 (refer to Figure 6 ) is set as the reference plane. The Z direction is one direction perpendicular to the reference plane (the upper surface 301a of the substrate 301). The second direction D2 is a direction along the inclined surface 305e and close to the reference plane (the upper surface 301a of the substrate 301).

[0087] In addition, in the following description, a direction along the inclined surface 305e and parallel to the first direction D1 (a direction parallel to the second direction D2) is simply referred to as a direction along the inclined surface 305e. This direction is also a direction along the inclined surface 305e and varying in distance from the reference plane (the upper surface 301a of the substrate 301).

[0088] As described above, the MR element 50 has shape anisotropy with the easy magnetization axis direction becoming a direction parallel to the U direction. That is, the MR element 50 has a shape long in the direction parallel to the U direction. The VZ cross section is orthogonal to the long side direction of the MR element 50. The "direction along the inclined surface 305e" defined as described above is also the short side direction of the MR element 50.

[0089] The MR element 50 has a lower surface 50a opposite the inclined surface 305e, an upper surface 50b on the opposite side of the lower surface 50a, and a first side surface 50c and a second side surface 50d on both sides in the short side direction (the direction along the inclined surface 305e) of the MR element 50. The first side surface 50c is located in front of the first direction D1. The second side surface 50d is located in front of the second direction D2.

[0090] The first side surface 50c has an upper end Ec1 at the Z direction end in the direction away from the upper surface 301a of the substrate 301 and a lower end Ec2 at the -Z direction end in the direction close to the upper surface 301a of the substrate 301. The second side surface 50d has an upper end Ed1 at the Z direction end in the direction away from the upper surface 301a of the substrate 301 and a lower end Ed2 at the -Z direction end in the direction close to the upper surface 301a of the substrate 301.

[0091] The lower electrode 61 is interposed between the MR element 50 and the inclined surface 305e. The lower electrode 61 has a lower surface 61a opposed to the inclined surface 305e, an upper surface 61b on the opposite side of the lower surface 61a, and two side surfaces connecting the lower surface 61a and the upper surface 61b (see FIG. 6). Further, the lower electrode 61 can also be formed from the inclined surface 305e to the flat surface 305d. In this case, one of the two side surfaces of the lower electrode 61 is disposed on the inclined surface 305e, and the other is disposed on the flat surface 305d. Alternatively, the lower electrode 61 can also be disposed on the inclined surface 305e as a whole. In this case, both of the two side surfaces of the lower electrode 61 are disposed on the inclined surface 305e. Figure 6 ). Further, the lower electrode 61 can also be formed from the inclined surface 305e to the flat surface 305d. In this case, one of the two side surfaces of the lower electrode 61 is disposed on the inclined surface 305e, and the other is disposed on the flat surface 305d. Alternatively, the lower electrode 61 can also be disposed on the inclined surface 305e as a whole. In this case, both of the two side surfaces of the lower electrode 61 are disposed on the inclined surface 305e.

[0092] Next, the shape of the MR element 50 will be described in detail. First, a first example of the upper surface 50b of the MR element 50 will be described with reference to Figure 9 FIG. 7. Figure 9 is a plan view showing the first example of the upper surface 50b of the MR element 50. Hereinafter, the long side direction of the MR element 50 (the direction parallel to the U direction) is indicated by a mark D3.

[0093] The upper end Ec1 of the first side surface 50c includes a first portion Sc1, a second portion Sc2, and a third portion Sc3 connecting the first portion Sc1 and the second portion Sc2. The upper end Ed1 of the second side surface 50d includes a first portion Sd1, a second portion Sd2, and a third portion Sd3 connecting the first portion Sd1 and the second portion Sd2. The first to third portions Sc1 to Sc3 and the first to third portions Sd1 to Sd3 constitute the outer edge of the upper surface 50b of the MR element 50.

[0094] At least a part of each of the first to third portions Sc1 to Sc3 and the first to third portions Sd1 to Sd3 is linear. Further, in the present application, the "linear" includes the case where it is actually a straight line, and the case where it can be seen as extending along an imaginary straight line when viewed in the Z direction. In particular, the first portions Sc1, Sd1 and the second portions Sc2, Sd2 respectively extend along imaginary straight lines Lc1, Ld1, Lc2, Ld2. Each of the imaginary straight lines Lc1, Ld1, Lc2, Ld2 is inclined with respect to each of the long side direction D3 and the upper surface 301a of the substrate 301. In the case where the inclined surface 305e is curved, each of the first portions Sc1, Sd1 and the second portions Sc2, Sd2 is also curved, strictly speaking.

[0095] An edge can also be formed between the first portion Sc1 and the third portion Sc3, between the second portion Sc2 and the third portion Sc3, between the first portion Sd1 and the third portion Sd3, between the second portion Sd2 and the third portion Sd3, between the first portion Sc1 and the first portion Sd1, and between the second portion Sc2 and the second portion Sd2, respectively. In addition, the edge can be a sharp shape or a shape with a rounded corner.

[0096] The MR element 50 includes a first varying portion 501, a second varying portion 502, and a constant portion 503 between the first varying portion 501 and the second varying portion 502. In the first varying portion 501, the second varying portion 502, and the constant portion 503, a magnetic field is applied in the direction of the long side D3. Figure 9 In the first varying portion 501 and the constant portion 503, and in the second varying portion 502 and the constant portion 503, the boundaries are indicated by broken lines, respectively. The first varying portion 501, the constant portion 503, and the second varying portion 502 are arranged in this order along the direction of the long side D3.

[0097] The first varying portion 501 has an upper surface portion 50b1 constituting a part of the upper surface 50b. The second varying portion 502 has an upper surface portion 50b2 constituting another part of the upper surface 50b. The constant portion 503 has an upper surface portion 50b3 constituting still another part of the upper surface 50b.

[0098] The first portions Sc1 and Sd1 constitute the outer edges of the upper surface portion 50b1 of the first varying portion 501. Therefore, in the first varying portion 501, at least a part of each of the upper end Ec1 of the first side surface 50c and the upper end Ed1 of the second side surface 50d is linear. In the first varying portion 501, along the direction of the long side D3, the interval between the first side surface 50c and the second side surface 50d becomes small, and the interval between the upper end Ec1 and the upper end Ed1 (the interval between the first portion Sc1 and the first portion Sd1) also becomes small. These intervals become small as they are farther from the constant portion 503.

[0099] In the first varying portion 501, the second varying portion 502, and the constant portion 503, the boundaries are indicated by broken lines, respectively. The first varying portion 501, the constant portion 503, and the second varying portion 502 are arranged in this order along the direction of the long side D3. Figure 9 In the first varying portion 501 and the constant portion 503, and in the second varying portion 502 and the constant portion 503, the boundaries are indicated by broken lines, respectively. The first varying portion 501, the constant portion 503, and the second varying portion 502 are arranged in this order along the direction of the long side D3.

[0100] The sum (θc1+θd1) of the angle θc1 and the angle θd1 indicates the angle formed by the first portion Sc1 and the first portion Sd1. The sum of the angle θc1 and the angle θd1 is preferably in the range of 5° to 40°, and more preferably in the range of 10° to 25°, for example.

[0101] The second varying portion 502 can also have a shape symmetrical to the first varying portion 501 with respect to an imaginary plane intersecting the MR element 50 and intersecting the long-side direction D3. The second portions Sc2, Sd2 constitute the outer edges of the upper surface portion 50b2 of the second varying portion 502. Thus, in the second varying portion 502, at least a part of each of the upper end Ec1 of the first side surface 50c and the upper end Ed1 of the second side surface 50d becomes linear. Also, in the second varying portion 502, along the long-side direction D3, the interval between the first side surface 50c and the second side surface 50d becomes smaller, and the interval between the upper end Ec1 and the upper end Ed1 (the interval between the second portion Sc2 and the second portion Sd2) also becomes smaller. These intervals become smaller as they move away from the constant portion 503.

[0102] The second portion Sc2 forms an angle θc2 with respect to the imaginary straight line Lm. The second portion Sd2 forms an angle θd2 with respect to the imaginary straight line Lm. In the first example of the upper surface 50b, the angle θc2 and the angle θd2 are equal to or substantially equal to each other.

[0103] The sum (θc2+θd2) of the angle θc2 and the angle θd2 represents the angle between the second portion Sc2 and the second portion Sd2. The preferable range of the sum of the angle θc2 and the angle θd2 can also be the same as the preferable range of the angle between the first portion Sc1 and the first portion Sd1.

[0104] In the constant portion 503, the interval between the first side surface 50c and the second side surface 50d can also be constant regardless of the position in the long-side direction D3. Also, in the constant portion 503, the interval between the upper end Ec1 and the upper end Ed1 (the interval between the third portion Sc3 and the third portion Sd3) can also be constant regardless of the position in the long-side direction D3.

[0105] Next, a second example of the upper surface 50b of the MR element 50 will be described with reference to Figure 10 to FIG. 14. Figure 10 is a plan view showing the second example of the upper surface 50b of the MR element 50.

[0106] In the second example of the upper surface 50b, the relationship between the angle θc1 and the angle θd1 and the relationship between the angle θc2 and the angle θd2 are different from those in the first example of the upper surface 50b. In the second example of the upper surface 50b, the angle θc1 and the angle θd1 are different from each other, and the angle θc2 and the angle θd2 are different from each other. In the second example of the upper surface 50b, in particular, the angle θc1 is smaller than the angle θd1, and the angle θc2 is smaller than the angle θd2.

[0107] Further, the preferred ranges of the sum of the angle θcl and the angle θdl (the angle formed by the first portion Sc1 and the first portion Sdl) and the preferred ranges of the sum of the angle θc2 and the angle θd2 (the angle formed by the second portion Sc2 and the second portion Sd2) in the second example of the upper surface 50b can be the same as those in the first example of the upper surface 50b, respectively.

[0108] Next, a third example of the upper surface 50b of the MR element 50 will be described with reference to Figure 11 to FIG. 17. Figure 11 FIG. 17 is a plan view showing the third example of the upper surface 50b of the MR element 50.

[0109] In the third example of the upper surface 50b, the relationship between the angle θcl and the angle θdl and the relationship between the angle θc2 and the angle θd2 are different from those in the second example of the upper surface 50b. In the third example, the angle θcl is larger than the angle θdl, and the angle θc2 is larger than the angle θd2.

[0110] Further, the preferred ranges of the sum of the angle θcl and the angle θdl (the angle formed by the first portion Sc1 and the first portion Sdl) and the preferred ranges of the sum of the angle θc2 and the angle θd2 (the angle formed by the second portion Sc2 and the second portion Sd2) in the third example of the upper surface 50b can be the same as those in the first example of the upper surface 50b, respectively.

[0111] Next, the planar shape (the shape viewed from above) of the first and second side surfaces 50c, 50d of the MR element 50 will be described in detail. First, reference will be made to Figure 12 to FIG. 18. Figure 12 FIG. 18 is a plan view showing the first example of the first and second side surfaces 50c, 50d of the MR element 50.

[0112] The first side surface 50c has a tapered shape inclined with respect to the inclined surface 305e (see Figure 8 ). The lower end Ec2 of the first side surface 50c is located in front of the first direction Dl as viewed from the upper end Ec1 of the first side surface 50c. In addition, the second side surface 50d has a tapered shape inclined with respect to the inclined surface 305e (see Figure 8 ). The lower end Ed2 of the second side surface 50d is located in front of the second direction D2 as viewed from the upper end Edl of the second side surface 50d.

[0113] The MR element 50 further has edges 50el, 50e2 at which the first side surface 50c and the second side surface 50d intersect. The edge 50el is located at one end of the MR element 50 in one direction parallel to the longitudinal direction D3. The edge 50e2 is located at one end of the MR element 50 in another direction parallel to the longitudinal direction D3.

[0114] In the first example of the first and second side surfaces 50c, 50d, the dimension of the first side surface 50c at a cross section intersecting the MR element 50 and orthogonal to the long-side direction D3 and the dimension of the second side surface 50d at the cross section are equal to or substantially equal to each other regardless of the position of the cross section.

[0115] In Figure 12 , the symbol Dcl denotes the dimension of the first side surface 50c at a cross section intersecting the first varying portion 501 and orthogonal to the long-side direction D3. In addition, the symbol Dc3 denotes the dimension of the first side surface 50c at a cross section intersecting the constant portion 503 and orthogonal to the long-side direction D3. The dimensions Dcl, Dc3 are each the dimension of the first side surface 50c in the direction along the inclined surface 305e and the dimension of the first side surface 50c in the short-side direction of the MR element 50.

[0116] In addition, in Figure 12 , the symbol Ddl denotes the dimension of the second side surface 50d at a cross section intersecting the first varying portion 501 and orthogonal to the long-side direction D3. In addition, the symbol Dd3 denotes the dimension of the second side surface 50d at a cross section intersecting the constant portion 503 and orthogonal to the long-side direction D3. The dimensions Ddl, Dd3 are each the dimension of the second side surface 50d in the direction along the inclined surface 305e and the dimension of the second side surface 50d in the short-side direction of the MR element 50.

[0117] The maximum value of the dimension Dcl and the maximum value of the dimension Ddl are equal to or substantially equal to each other. In addition, the maximum value of the dimension Dc3 and the maximum value of the dimension Dd3 are equal to or substantially equal to each other. In addition, the maximum value of the dimension Dcl is larger than the maximum value of the dimension Dc3, and the maximum value of the dimension Ddl is larger than the maximum value of the dimension Dd3. Therefore, the sum of the maximum value of the dimension Dcl and the maximum value of the dimension Ddl is larger than the sum of the maximum value of the dimension Dc3 and the maximum value of the dimension Dd3.

[0118] Further, the maximum value of the dimension of the first side surface 50c at a cross section intersecting the second varying portion 502 and orthogonal to the long-side direction D3 (hereinafter referred to as a first dimension) and the maximum value of the dimension of the second side surface 50d at a cross section intersecting the second varying portion 502 and orthogonal to the long-side direction D3 (hereinafter referred to as a second dimension) are equal to or substantially equal to each other, in addition, the maximum value of the first dimension is larger than the maximum value of the dimension Dc3, and the maximum value of the second dimension is larger than the maximum value of the dimension Dd3. Therefore, the sum of the maximum value of the first dimension and the maximum value of the second dimension is larger than the sum of the maximum value of the dimension Dc3 and the maximum value of the dimension Dd3.

[0119] Next, with reference to Figure 13 , a second example of the first and second side surfaces 50c, 50d of the MR element 50 will be described.Figure 13 is a plan view showing a second example of the first and second side surfaces 50c, 50d of the MR element 50.

[0120] In the second example of the first and second side surfaces 50c, 50d, the dimension of the first side surface 50c at a cross section intersecting the MR element 50 and orthogonal to the long side direction D3 and the dimension of the second side surface 50d at the cross section are different from each other. In the second example of the first and second side surfaces 50c, 50d, in particular, the dimension of the first side surface 50c at the above-mentioned cross section is larger than the dimension of the second side surface 50d at the above-mentioned cross section regardless of the position of the above-mentioned cross section.

[0121] Further, the maximum value of the dimension Dcl is larger than the maximum value of the dimension Ddl, and the maximum value of the dimension Dc3 is larger than the maximum value of the dimension Dd3. Further, the maximum value of the above-mentioned first dimension is larger than the maximum value of the above-mentioned second dimension.

[0122] Next, with reference to Figure 14 , a third example of the first and second side surfaces 50c, 50d of the MR element 50 will be described. Figure 14 is a plan view showing the third example of the first and second side surfaces 50c, 50d of the MR element 50.

[0123] In the third example, the dimension of the first side surface 50c at a cross section intersecting the MR element 50 and orthogonal to the long side direction D3 is smaller than the dimension of the second side surface 50d at the cross section. Further, the maximum value of the dimension Dcl is smaller than the maximum value of the dimension Ddl, and the maximum value of the dimension Dc3 is smaller than the maximum value of the dimension Dd3. Further, the maximum value of the above-mentioned first dimension is smaller than the maximum value of the above-mentioned second dimension.

[0124] Further, in Figures 12-14 , for convenience, the first example of the upper surface 50b of the MR element 50 shown in Figure 9 is combined with the first to third examples of the first and second side surfaces 50c, 50d of the MR element 50. However, the second example of the upper surface 50b of the MR element 50 shown in Figure 10 or the third example of the upper surface 50b of the MR element 50 shown in Figure 11 may be combined with the first to third examples of the first and second side surfaces 50c, 50d of the MR element 50.

[0125] Next, the operation and effects of the magnetic sensor 1 of the present embodiment will be described. In the present embodiment, the MR element 50 includes the first variation portion 501 and the second variation portion 502 each having the above-described characteristics. Thus, according to the present embodiment, it is easier to set the direction of the magnetization of the free layer 54 to the prescribed direction than in the case where the MR element 50 does not include the first variation portion 501 and the second variation portion 502. Specifically, it is possible to reduce the strength of the magnetic field for setting the direction of the magnetization of the free layer 54 to the prescribed direction. As shown in FIG. 8, in the case where the coil element 82 overlaps at least a part of each of the first variation portion 501 and the second variation portion 502 as viewed from above, the effect can be more effectively exerted. Figure 5

[0126] [Second Embodiment]

[0127] Next, the magnetic sensor 1 of the second embodiment of the present application will be described with reference to Figure 15 Figure 15 is a cross-sectional view showing a part of the magnetic sensor 1 of the present embodiment.

[0128] In the present embodiment, the entire shape of each of the plurality of convex surfaces 305c of the insulating layer 305 is a triangular roof shape formed by moving the triangular shape of the convex surface 305c shown in FIG. 6 along a direction parallel to the U direction. In addition, each of the plurality of first inclined surfaces 305a and the plurality of second inclined surfaces 305b of the insulating layer 305 is a flat surface. Each of the plurality of first inclined surfaces 305a is a flat surface parallel to the U direction and the W1 direction. Each of the plurality of second inclined surfaces 305b is a flat surface parallel to the U direction and the W2 direction. Figure 15

[0129] The insulating layer 305 can also include a plurality of protruding portions forming the plurality of convex surfaces 305c as in the example shown in FIG. 6. Alternatively, the insulating layer 305 can include a plurality of groove portions arranged in a direction parallel to the V direction. Each of the plurality of groove portions has a first wall surface corresponding to the first inclined surface 305a and a second wall surface corresponding to the second inclined surface 305b. One convex surface 305c is constituted by the first wall surface of one groove portion and the second wall surface of another groove portion adjacent to the one groove portion on the -V direction side. Figure 6

[0130] In addition, in the example shown in FIG. 6, each of the plurality of groove portions also has a bottom surface corresponding to the flat surface 305d. However, each of the plurality of groove portions can not have a bottom surface. Figure 15

[0131] The other structures, operations, and effects of the present embodiment are the same as those of the first embodiment.

[0132] ​​​​​Further, the present application is not limited to the above-described embodiments, and various changes can be made. For example, the shapes of the upper surface 50b, the first side surface 50c, and the second side surface 50d of the MR element 50 are not limited to those of the embodiments described above, but are arbitrary as long as the requirements of the claims are satisfied.

[0133] Further, the magnetic sensor 1 can further include a third detection circuit configured to detect a component of the object magnetic field in a direction parallel to the XY plane and generate at least one third detection signal having a corresponding relationship with the component. In this case, the processor 40 can be configured to generate a detection value corresponding to a component of the object magnetic field in a direction parallel to the U direction based on the at least one third detection signal. The third detection circuit can be integrated with the first and second detection circuits 20, 30 or can be included in a chip different from the first and second detection circuits 20, 30.

[0134] As described above, the magnetic sensor of the present application includes a substrate having a reference plane, a support member disposed above the substrate and having an inclined surface inclined with respect to the reference plane, and a magnetic detection element disposed above the inclined surface and having a shape elongated in one direction. The magnetic detection element has a first side surface and a second side surface located on both sides in a short side direction of the magnetic detection element and each having an upper end. The first side surface is located in front in a first direction along the direction of the inclined surface and away from the reference plane. The second side surface is located in front in a second direction along the direction of the inclined surface and close to the reference plane. The magnetic detection element includes a first change portion in which at least a portion of each of the upper end of the first side surface and the upper end of the second side surface is linear and the interval between the upper end of the first side surface and the upper end of the second side surface decreases along the long side direction of the magnetic detection element.

[0135] In the magnetic sensor of the present application, the magnetic detection element can further have an edge where the first side surface and the second side surface intersect.

[0136] Further, in the magnetic sensor of the present application, the upper end of the first side surface of the first change portion can form a first angle with respect to an imaginary straight line extending between the first side surface and the second side surface and parallel to the long side direction. The upper end of the second side surface of the first change portion can form a second angle with respect to the imaginary straight line. The first angle and the second angle can be different from each other. Alternatively, the first angle and the second angle can be equal to each other.

[0137] Further, in the magnetic sensor of the present application, each of the first side surface and the second side surface can further have a lower end. The lower end of the first side surface can be located in front in the first direction as viewed from the upper end of the first side surface. The lower end of the second side surface can be located in front in the second direction as viewed from the upper end of the second side surface.

[0138] In addition, in the magnetic sensor of the present application, the magnetic detection element can further include a constant portion in which the upper ends of the first side surface and the second side surface each become linear in the longitudinal direction, and the interval between the first side surface and the second side surface is constant. An edge can be formed between the upper end of the first change portion and the upper end of the constant portion. The magnetic detection element can further include a second change portion disposed at a position sandwiching the constant portion between the first change portion, in which the upper ends of the first side surface and the second side surface each become linear in the longitudinal direction, and the interval between the first side surface and the second side surface is smaller. The second change portion can have a shape symmetrical with respect to the first change portion with a virtual plane intersecting the magnetic detection element and orthogonal to the longitudinal direction as a center.

[0139] In the case where the magnetic detection element includes the constant portion, the maximum value of the size of the first side surface in a first cross section intersecting the first change portion and orthogonal to the longitudinal direction can be larger than the maximum value of the size of the first side surface in a second cross section intersecting the constant portion and orthogonal to the longitudinal direction. The maximum value of the size of the second side surface in the first cross section can be larger than the maximum value of the size of the second side surface in the second cross section. The sum of the maximum value of the size of the first side surface in the first cross section and the maximum value of the size of the second side surface in the first cross section can be larger than the sum of the maximum value of the size of the first side surface in the second cross section and the maximum value of the size of the second side surface in the second cross section.

[0140] In addition, in the magnetic sensor of the present application, the first size, which is the size of the first side surface in a third cross section intersecting the magnetic detection element and orthogonal to the longitudinal direction, and the second size, which is the size of the second side surface in the third cross section, can be equal to each other. Alternatively, the first size, which is the size of the first side surface in a third cross section intersecting the magnetic detection element and orthogonal to the longitudinal direction, and the second size, which is the size of the second side surface in the third cross section, can be different from each other. In this case, the first size can be larger than the second size. Alternatively, the second size can be larger than the first size.

[0141] In addition, in the magnetic sensor of the present application, the magnetic detection element can include a plurality of magnetic layers stacked, and can be configured so that a current flows in a stacking direction of the plurality of magnetic layers. The plurality of magnetic layers can include a free layer having magnetization whose direction can change in accordance with an external magnetic field, and a magnetization fixed layer having magnetization whose direction is fixed, and can be interposed between the free layer and the inclined surface. The magnetic sensor of the present application can further include a coil that applies a magnetic field of a prescribed direction to the free layer. The coil can overlap at least a portion of the first change portion as viewed from a direction perpendicular to the reference plane.

[0142] As described above, various modes and modifications of the present application can be implemented. Therefore, the present application can be implemented even in modes other than the above-described best modes, within the scope equivalent to the claims.

Claims

1. A magnetic sensor, characterized by comprising: a substrate having a reference plane; a support member disposed on the substrate and having an inclined surface inclined with respect to the reference plane; and a magnetic detection element disposed on the inclined surface and having a shape elongated in one direction, the magnetic detection element having a first side surface and a second side surface located on both sides in a short side direction of the magnetic detection element and each having an upper end, the first side surface being located in front in a first direction along the inclined surface and away from the reference plane, the second side surface being located in front in a second direction along the inclined surface and close to the reference plane, the magnetic detection element including a first change portion in which at least a portion of each of the upper end of the first side surface and the upper end of the second side surface is linear and the interval between the upper end of the first side surface and the upper end of the second side surface is smaller in a long side direction of the magnetic detection element.

2. The magnetic sensor according to claim 1, characterized in that the magnetic detection element further has an edge where the first side surface and the second side surface intersect.

3. The magnetic sensor according to claim 1, characterized in that the upper end of the first side surface of the first change portion forms a first angle with respect to an imaginary straight line extending between the first side surface and the second side surface and parallel to the long side direction, the upper end of the second side surface of the first change portion forms a second angle with respect to the imaginary straight line, the first angle and the second angle are different from each other.

4. The magnetic sensor according to claim 1, characterized in that the upper end of the first side surface of the first change portion forms a first angle with respect to an imaginary straight line extending between the first side surface and the second side surface and parallel to the long side direction, the upper end of the second side surface of the first change portion forms a second angle with respect to the imaginary straight line, the first angle and the second angle are equal to each other.

5. The magnetic sensor according to claim 1, characterized in that each of the first side surface and the second side surface further has a lower end, the lower end of the first side surface is located in front in the first direction as viewed from the upper end of the first side surface, the lower end of the second side surface is located in front in the second direction as viewed from the upper end of the second side surface.

6. The magnetic sensor according to claim 1, characterized in that the magnetic detection element further includes a constant portion in which the upper end of each of the first side surface and the second side surface is linear and the interval between the first side surface and the second side surface is constant in the long side direction.

7. The magnetic sensor according to claim 6, characterized in that an edge is formed between the upper end of the first change portion and the upper end of the constant portion.

8. The magnetic sensor according to claim 6, characterized in that ​ The magnetic detection element further includes a second varying portion disposed at a position sandwiching the constant portion between the first varying portion, the upper ends of the first side surface and the second side surface each being linear in the long direction, and the first side surface and the second side surface being closer to each other.

9. The magnetic sensor according to claim 8, wherein The second varying portion has a shape symmetrical to the first varying portion with respect to an imaginary plane intersecting the magnetic detection element and orthogonal to the long direction.

10. The magnetic sensor according to claim 6, wherein A maximum value of the size of the first side surface at a first cross section intersecting the first varying portion and orthogonal to the long direction is larger than a maximum value of the size of the first side surface at a second cross section intersecting the constant portion and orthogonal to the long direction, A maximum value of the size of the second side surface at the first cross section is larger than a maximum value of the size of the second side surface at the second cross section.

11. The magnetic sensor according to claim 6, wherein A total of a maximum value of the size of the first side surface at a first cross section intersecting the first varying portion and orthogonal to the long direction and a maximum value of the size of the second side surface at the first cross section is larger than a total of a maximum value of the size of the first side surface at a second cross section intersecting the constant portion and orthogonal to the long direction and a maximum value of the size of the second side surface at the second cross section.

12. The magnetic sensor according to claim 1, wherein A first size is equal to a second size, the first size being a size of the first side surface at a third cross section intersecting the magnetic detection element and orthogonal to the long direction, and the second size being a size of the second side surface at the third cross section.

13. The magnetic sensor according to claim 1, wherein A first size is not equal to a second size, the first size being a size of the first side surface at a third cross section intersecting the magnetic detection element and orthogonal to the long direction, and the second size being a size of the second side surface at the third cross section.

14. The magnetic sensor according to claim 13, wherein The first size is larger than the second size.

15. The magnetic sensor according to claim 13, wherein The second size is larger than the first size.

16. The magnetic sensor according to claim 1, wherein The magnetic detection element includes a plurality of magnetic layers stacked, and is configured so that a current flows in a stacking direction of the plurality of magnetic layers.

17. The magnetic sensor according to claim 16, wherein The plurality of magnetic layers include a free layer having magnetization whose direction is changeable in accordance with an external magnetic field, and a magnetization-fixed layer having magnetization whose direction is fixed, and are interposed between the free layer and the inclined surface.

18. The magnetic sensor according to claim 17, wherein Further provided is a coil that applies a magnetic field of a prescribed direction to the free layer.

19. The magnetic sensor according to claim 18, wherein The coil overlaps at least a portion of the first change portion as viewed from a direction perpendicular to the reference plane.

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