magnetic sensor

Abstract

A magnetic sensor includes a substrate having an upper surface, an insulating layer disposed on the substrate and having first and second inclined surfaces inclined with respect to the upper surface of the substrate, and an MR element structure. The MR element is disposed on the first inclined surface or the second inclined surface. The MR element has a lower surface opposite the first inclined surface or the second inclined surface, an upper surface, and a first surface connecting the lower surface and the upper surface and including two steps.

Description

Technical Field

[0001] The present invention relates to a magnetic sensor having a magnetoresistive element disposed on an inclined surface. Background Technology

[0002] In recent years, magnetic sensors using magnetoresistive elements have been utilized in various applications. In systems incorporating magnetic sensors, it is sometimes desirable to detect a magnetic field component that includes a direction perpendicular to the plane of the substrate using a magnetoresistive element disposed on a substrate. In such cases, by providing a soft magnetic material that converts the magnetic field perpendicular to the plane of the substrate into a magnetic field parallel to the plane of the substrate, or by disposing of the magnetoresistive element on an inclined surface formed on the substrate, it is possible to detect a magnetic field component that includes a direction perpendicular to the plane of the substrate.

[0003] Magnetic sensors comprising a magnetoresistive element formed on an inclined plane are disclosed in Japanese Patent Application Publication No. 2006-194733 and Chinese Patent Application Publication No. 101325211A. In the magnetic sensor disclosed in Chinese Patent Application Publication No. 101325211A, the side of the magnetoresistive element is a conical shape relative to the inclined plane.

[0004] As magnetoresistive elements, for example, TMR (tunneling magnetoresistive) elements or GMR (giant magnetoresistive) elements can be used. In a TMR element, current flows in a direction substantially perpendicular to the face of each layer constituting the TMR element. Additionally, as a GMR element, a CPP (current perpendicular to plane) type GMR element is known, in which current flows in a direction substantially perpendicular to the face of each layer constituting the GMR element. When using TMR elements or CPP type GMR elements as magnetoresistive elements, multiple magnetoresistive elements are connected in series using multiple lower electrodes and multiple upper electrodes.

[0005] As described above, in TMR elements or CPP-type GMR elements, a magnetoresistive element is positioned between the lower and upper electrodes. The magnetoresistive element is relatively thin, therefore the spacing between the lower and upper electrodes is also small, potentially leading to a short circuit between them. This problem becomes significant when the magnetoresistive element is positioned on an inclined surface. Summary of the Invention

[0006] The object of the present invention is to provide a magnetic sensor that can prevent electrode short circuits in a magnetic sensor having a magnetoresistive element disposed on an inclined surface.

[0007] The present invention provides a magnetic sensor comprising: a substrate having a reference plane; a support member disposed on the substrate and having an inclined surface inclined relative to the reference plane; and a magnetic detection element structure disposed on the inclined surface and having: a lower surface opposite to the inclined surface, an upper surface opposite to the lower surface, and a first surface connecting the lower surface and the upper surface and including two steps.

[0008] In the magnetic sensor of the present invention, the magnetic detection element structure has a lower surface, an upper surface, and a first surface connecting the lower surface and the upper surface and including two steps. Therefore, according to the present invention, in a magnetic sensor having a magnetoresistive effect element disposed on an inclined surface, electrode short circuits can be prevented.

[0009] Other objects, features and advantages of the present invention will become fully apparent from the following description. Attached Figure Description

[0010] Figure 1 This is a perspective view of the magnetic sensor according to the first embodiment of the present invention.

[0011] Figure 2 This is a functional block diagram showing the configuration of a magnetic sensor device including the magnetic sensor of the first embodiment of the present invention.

[0012] Figure 3 This is a circuit diagram showing the circuit structure of the first detection circuit according to the first embodiment of the present invention.

[0013] Figure 4 This is a circuit diagram showing the circuit structure of the second detection circuit according to the first embodiment of the present invention.

[0014] Figure 5 This is a top view showing a portion of the magnetic sensor according to the first embodiment of the present invention.

[0015] Figure 6 This is a cross-sectional view showing a portion of the magnetic sensor according to the first embodiment of the present invention.

[0016] Figure 7 This is a side view showing the magnetoresistive effect element according to the first embodiment of the present invention.

[0017] Figure 8 This is a cross-sectional view of the MR element structure of the first example of the first embodiment of the present invention.

[0018] Figure 9 It means Figure 8 The diagram shows a cross-sectional view of the magnetoresistive element and the lower electrode of the MR element structure.

[0019] Figure 10This is a cross-sectional view showing a first example of the fourth side surface of the lower electrode according to the first embodiment of the present invention.

[0020] Figure 11 This is a cross-sectional view showing a second example of the fourth side of the lower electrode according to the first embodiment of the present invention.

[0021] Figure 12 This is a cross-sectional view of the MR element structure of a second example of the first embodiment of the present invention.

[0022] Figure 13 This is a cross-sectional view showing the MR element structure in a first modified example of the magnetic sensor according to the first embodiment of the present invention.

[0023] Figure 14 It means Figure 13 The diagram shows a cross-sectional view of the magnetoresistive element and the lower electrode of the MR element structure.

[0024] Figure 15 This is a cross-sectional view showing the MR element structure in a second variation of the magnetic sensor according to the first embodiment of the present invention.

[0025] Figure 16 This is a cross-sectional view showing a portion of the magnetic sensor according to the second embodiment of the present invention. Detailed Implementation

[0026] [First Implementation Method]

[0027] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. First, referring to... Figure 1 and Figure 2 The structure of the magnetic sensor according to the first embodiment of the present invention will be described. Figure 1 This is a perspective view showing the magnetic sensor of this embodiment. Figure 2 This is a functional block diagram showing the configuration of a magnetic sensor device including the magnetic sensor of this embodiment.

[0028] like Figure 1 As shown, the magnetic sensor 1 is a cuboid-shaped chip. The magnetic sensor 1 has an upper surface 1a and a lower surface located opposite each other, and four side surfaces connecting the upper surface 1a and the lower surface. Additionally, the magnetic sensor 1 has multiple electrode pads disposed on the upper surface 1a.

[0029] Here, refer to Figure 1The reference coordinate system of this embodiment will be described. The reference coordinate system is a coordinate system based on the magnetic sensor 1, and is an orthogonal coordinate system defined by three axes. In the reference coordinate system, the X direction, Y direction, and Z direction are defined. The X direction, Y direction, and Z direction are mutually orthogonal. In this embodiment, specifically, the direction perpendicular to the upper surface 1a of the magnetic sensor 1, i.e., the direction from the lower surface of the magnetic sensor 1 towards the upper surface 1a, is defined as the Z direction. Furthermore, the direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. The three axes of the reference coordinate system are defined as axes parallel to the X direction, axes parallel to the Y direction, and axes parallel to the Z direction.

[0030] Hereinafter, the position located in front of the reference position in the Z direction will be referred to as "above," and the position located on the opposite side of the reference position relative to "above" will be referred to as "below." Furthermore, regarding the components of the magnetic sensor 1, the side located at the Z direction end will be referred to as the "upper surface," and the side located at the -Z direction end will be referred to as the "lower surface." Additionally, the expression "when viewed from the Z direction" refers to observing the object from a position away from the Z direction.

[0031] like Figure 2 As shown, the magnetic sensor 1 includes a first detection circuit 20 and a second detection circuit 30. Each of the first and second detection circuits 20 and 30 includes multiple magnetic detection elements, configured to generate at least one detection signal by detecting the magnetic field of the target object. In this embodiment, in particular, the multiple magnetic detection elements are multiple magnetoresistive elements. Hereinafter, magnetoresistive elements will be referred to as MR elements.

[0032] The multiple detection signals generated by the first and second detection circuits 20 and 30 are processed by the processor 40. The magnetic sensor 1 and the processor 40 constitute the magnetic sensor device 100. The processor 40 is configured to process the multiple detection signals generated by the first and second detection circuits 20 and 30 to generate a first detection value and a second detection value that correspond to components of the magnetic field in two distinct directions at a predetermined reference position. In this embodiment, specifically, the two distinct directions are a direction parallel to the XY plane and a direction parallel to the Z direction. The processor 40 is, for example, constructed from an application-specific integrated circuit (ASIC).

[0033] The processor 40 may also be included in a support body that supports the magnetic sensor 1. This support body has multiple electrode pads. The first and second detection circuits 20 and 30 and the processor 40 are connected, for example, via the multiple electrode pads of the magnetic sensor 1, the multiple electrode pads of the support body, and multiple bonding wires. When the multiple electrode pads of the magnetic sensor 1 are disposed on the upper surface 1a of the magnetic sensor 1, the magnetic sensor 1 may also be mounted on the upper surface of the support body with its lower surface facing the upper surface of the support body.

[0034] Next, refer to Figures 3-6 The first and second detection circuits 20 and 30 are described below. Figure 3 This is a circuit diagram showing the circuit structure of the first detection circuit 20. Figure 4 This is a circuit diagram showing the circuit structure of the second detection circuit 30. Figure 5 This is a top view showing a portion of magnetic sensor 1. Figure 6 This is a cross-sectional view showing a portion of magnetic sensor 1.

[0035] Here, as Figure 5 As shown, the U direction and V direction are defined as follows. The U direction is the direction of rotation from the X direction to the -Y direction. The V direction is the direction of rotation from the Y direction to the X direction. In this embodiment, specifically, the U direction is defined as the direction of rotation α from the X direction to the -Y direction, and the V direction is defined as the direction of rotation α from the Y direction to the X direction. Furthermore, α is an angle greater than 0° and less than 90°. In one example, α is 45°. In addition, the direction opposite to the U direction is defined as the -U direction, and the direction opposite to the V direction is defined as the -V direction.

[0036] In addition, such as Figure 6 As shown, the W1 and W2 directions are defined as follows. The W1 direction is the direction of rotation from the V direction to the -Z direction. The W2 direction is the direction of rotation from the V direction to the Z direction. In this embodiment, specifically, the W1 direction is defined as the direction of rotation β from the V direction to the -Z direction, and the W2 direction is defined as the direction of rotation β from the V direction to the Z direction. Furthermore, β is an angle greater than 0° and less than 90°. In addition, the direction opposite to the W1 direction is defined as the -W1 direction, and the direction opposite to the W2 direction is defined as the -W2 direction. The W1 and W2 directions are both orthogonal to the U direction.

[0037] The first detection circuit 20 is configured to detect the component of the magnetic field parallel to the W1 direction of the object, and generate at least one first detection signal corresponding to the component. The second detection circuit 30 is configured to detect the component of the magnetic field parallel to the W2 direction of the object, and generate at least one second detection signal corresponding to the component.

[0038] like Figure 3 As shown, the first detection circuit 20 includes a power supply terminal V2, a ground terminal G2, signal output terminals E21 and E22, a first resistor R21, a second resistor R22, a third resistor R23, and a fourth resistor R24. The multiple MR elements of the first detection circuit 20 constitute the first to fourth resistors R21, R22, R23, and R24.

[0039] The first resistor R21 is located between the power supply terminal V2 and the signal output terminal E21. The second resistor R22 is located between the signal output terminal E21 and the ground terminal G2. The third resistor R23 is located between the signal output terminal E22 and the ground terminal G2. The fourth resistor R24 ​​is located between the power supply terminal V2 and the signal output terminal E22.

[0040] like Figure 4 As shown, the second detection circuit 30 includes a power supply terminal V3, a ground terminal G3, signal output terminals E31 and E32, a first resistor R31, a second resistor R32, a third resistor R33, and a fourth resistor R34. The multiple MR elements of the second detection circuit 30 constitute the first to fourth resistors R31, R32, R33, and R34.

[0041] The first resistor R31 is located between the power supply terminal V3 and the signal output terminal E31. The second resistor R32 is located between the signal output terminal E31 and the ground terminal G3. The third resistor R33 is located between the signal output terminal E32 and the ground terminal G3. The fourth resistor R34 is located between the power supply terminal V3 and the signal output terminal E32.

[0042] Apply a specified voltage or current to power supply terminals V2 and V3 respectively. Ground terminals G2 and G3 are each grounded.

[0043] Hereinafter, the plurality of MR elements in the first detection circuit 20 will be referred to as a plurality of first MR elements 50B, and the plurality of MR elements in the second detection circuit 30 will be referred to as a plurality of second MR elements 50C. The first and second detection circuits 20 and 30 are constituent elements of the magnetic sensor 1; therefore, it can also be said that the magnetic sensor 1 includes a plurality of first MR elements 50B and a plurality of second MR elements 50C. Furthermore, any MR element will be designated by the symbol 50.

[0044] Figure 7This is a side view of the MR element 50. The MR element 50 is a spin-valve type MR element comprising multiple magnetic layers. The MR element 50 has: a magnetized fixed layer 51 having magnetization with a fixed direction; a free layer 53 having magnetization with an direction that can vary according to the direction of the object's magnetic field; and a gap layer 52 disposed between the magnetized fixed layer 51 and the free layer 53. The MR element 50 can be a TMR (tunneling magnetoresistance) element or a GMR (giant magnetoresistance) element. In a TMR element, the gap layer 52 is a tunnel barrier layer. In a GMR element, the gap layer 52 is a non-magnetic conductive layer. In the MR element 50, the resistance value varies according to the angle formed by the magnetization direction of the free layer 53 relative to the magnetization direction of the magnetized fixed layer 51; the resistance value is at its minimum when the angle is 0° and at its maximum when the angle is 180°. In each MR element 50, the free layer 53 has a shape anisotropy in which the easy magnetization axis is orthogonal to the magnetization direction of the magnetization fixed layer 51. Furthermore, as a device for setting the easy magnetization axis of the free layer 53 in a predetermined direction, a magnet that applies a bias magnetic field to the free layer 53 can also be used. The magnetization fixed layer 51, the gap layer 52, and the free layer 53 are stacked sequentially.

[0045] The MR element 50 may also have an antiferromagnetic layer disposed on the opposite side of the gap layer 52 in the magnetization fixation layer 51. The antiferromagnetic layer is made of an antiferromagnetic material and generates exchange coupling with the magnetization fixation layer 51, fixing the magnetization direction of the magnetization fixation layer 51. Alternatively, the magnetization fixation layer 51 may also be a so-called self-pinned fixation layer (synthetic ferro-pinned layer, SFP layer). A self-pinned fixation layer has a stacked ferrite structure comprising a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer, allowing the two ferromagnetic layers to be antiferromagnetically coupled.

[0046] Furthermore, the arrangement of layers 51-53 in MR element 50 can also be consistent with... Figure 7 The configuration shown is reversed from top to bottom.

[0047] exist Figure 3 and Figure 4 In the diagram, solid arrows indicate the direction of magnetization of the magnetized fixed layer 51 of the MR element 50. Hollow arrows indicate the direction of magnetization of the free layer 53 of the MR element 50 when no target magnetic field is applied to the MR element 50.

[0048] exist Figure 3In the example shown, the magnetization direction of the magnetization fixing layer 51 in each of the first and third resistor sections R21 and R23 is the W1 direction. The magnetization direction of the magnetization fixing layer 51 in each of the second and fourth resistor sections R22 and R24 is the -W1 direction. Furthermore, the free layer 53 of each of the plurality of first MR elements 50B has an anisotropic shape, with its easy magnetization axis direction parallel to the U direction. When no target magnetic field is applied to the first MR element 50B, the magnetization direction of the free layer 53 in each of the first and second resistor sections R21 and R22 is the U direction. In the above case, the magnetization direction of the free layer 53 in each of the third and fourth resistor sections R23 and R24 is the -U direction.

[0049] exist Figure 4 In the example shown, the magnetization direction of the magnetization fixing layer 51 in each of the first and third resistor sections R31 and R33 is the W2 direction. The magnetization direction of the magnetization fixing layer 51 in each of the second and fourth resistor sections R32 and R34 is the -W2 direction. Furthermore, the free layer 53 of each of the plurality of second MR elements 50C has an anisotropic shape, with its easy magnetization axis direction parallel to the U direction. When no target magnetic field is applied to the second MR element 50C, the magnetization direction of the free layer 53 in each of the first and second resistor sections R31 and R32 is the U direction. In the above case, the magnetization direction of the free layer 53 in each of the third and fourth resistor sections R33 and R34 is the -U direction.

[0050] The magnetic sensor 1 includes a magnetic field generator configured to apply a magnetic field of a predetermined direction to the free layer 53 of each of the plurality of first MR elements 50B and the plurality of second MR elements 50C. In this embodiment, the magnetic field generator includes a coil 80 that applies a magnetic field of a predetermined direction to the free layer 53 of each of the plurality of first MR elements 50B and the plurality of second MR elements 50C.

[0051] Furthermore, from the perspective of manufacturing precision of the MR element 50, the magnetization direction of the magnetization of the magnetization fixing layer 51 and the direction of the easy magnetization axis of the free layer 53 can be slightly offset from the aforementioned directions. Additionally, the magnetization of the magnetization fixing layer 51 can also be configured to include a magnetization component with the aforementioned direction as the primary component. In this case, the magnetization direction of the magnetization fixing layer 51 is the aforementioned direction or approximately the aforementioned direction.

[0052] In this embodiment, the MR element 50 is configured such that current flows in the stacking direction of the plurality of magnetic layers, namely the magnetized fixed layer 51 and the free layer 53. As described later, the magnetic sensor 1 includes a lower electrode and an upper electrode for flowing current through the MR element 50. The MR element 50 is disposed between the lower electrode and the upper electrode.

[0053] The following is for reference Figure 5 and Figure 6 The specific structure of magnetic sensor 1 will be described in detail. Figure 6 Show Figure 5 A portion of the cross section at the location indicated by line 6-6.

[0054] The magnetic sensor 1 includes a substrate 301 with an upper surface 301a, insulating layers 302, 303, 304, 305, 307, 308, 309, and 310, multiple lower electrodes 61B and 61C, multiple upper electrodes 62B and 62C, multiple lower coil elements 81, and multiple upper coil elements 82. The upper surface 301a of the substrate 301 is parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 301a of the substrate 301. Furthermore, the coil elements are part of the winding of the coil.

[0055] An insulating layer 302 is disposed on a substrate 301. A plurality of lower coil elements 81 are disposed on the insulating layer 302. An insulating layer 303 is disposed on the insulating layer 302 around the plurality of lower coil elements 81. Insulating layers 304 and 305 are sequentially stacked on the plurality of lower coil elements 81 and the insulating layer 303.

[0056] Multiple lower electrodes 61B and multiple lower electrodes 61C are disposed on insulating layer 305. Insulating layer 307 is disposed on insulating layer 305 around the multiple lower electrodes 61B and around the multiple lower electrodes 61C. Multiple first MR elements 50B are disposed on the multiple lower electrodes 61B. Multiple second MR elements 50C are disposed on the multiple lower electrodes 61C. Insulating layer 308 is disposed on the multiple lower electrodes 61B, the multiple lower electrodes 61C, and insulating layer 307 around the multiple first MR elements 50B and around the multiple second MR elements 50C. Multiple upper electrodes 62B are disposed on the multiple first MR elements 50B and insulating layer 308. Multiple upper electrodes 62C are disposed on the multiple second MR elements 50C and insulating layer 308. Insulating layer 309 is disposed on insulating layer 308 around the multiple upper electrodes 62B and around the multiple upper electrodes 62C.

[0057] An insulating layer 310 is disposed over a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, and an insulating layer 309. A plurality of upper coil elements 82 are disposed over the insulating layer 310. The magnetic sensor 1 may also include an insulating layer (not shown) covering the plurality of upper coil elements 82 and the insulating layer 310.

[0058] The magnetic sensor 1 includes a support member supporting a plurality of first MR elements 50B and a plurality of second MR elements 50C. The support member has at least one inclined surface that is inclined relative to the upper surface 301a of the substrate 301. In this embodiment, in particular, the support member is constituted by an insulating layer 305. Furthermore, in… Figure 5 The diagram shows the components of the magnetic sensor 1, including an insulating layer 305, a plurality of first MR elements 50B, a plurality of second MR elements 50C, and a plurality of upper coil elements 82.

[0059] The insulating layer 305 has a plurality of convex surfaces 305c extending in a direction (Z direction) away from the upper surface 301a of the substrate 301. Each of the plurality of convex surfaces 305c extends in a direction parallel to the U direction. The overall shape of the convex surfaces 305c is such that... Figure 6 The convex surface 305c shown is a semi-cylindrical curved surface formed by moving its curved shape (arch shape) along a direction parallel to the U direction. Furthermore, multiple convex surfaces 305c are arranged side-by-side at predetermined intervals in a direction parallel to the V direction.

[0060] Each of the plurality of convex surfaces 305c has an upper end portion that is furthest from the upper surface 301a of the substrate 301. In this embodiment, the upper end portions of each of the plurality of convex surfaces 305c extend in a direction parallel to the U direction. Here, focus is placed on any one of the plurality of convex surfaces 305c. The convex surface 305c includes a first inclined surface 305a and a second inclined surface 305b. The first inclined surface 305a is the surface of the convex surface 305c that is closer to the V direction side than the upper end portion of the convex surface 305c. The second inclined surface 305b is the surface of the convex surface 305c that is closer to the -V direction side than the upper end portion of the convex surface 305c. Figure 5 In the diagram, the boundaries of the first inclined surface 305a and the second inclined surface 305b are represented by dashed lines.

[0061] The upper end of the convex surface 305c can also be the boundary between the first inclined surface 305a and the second inclined surface 305b. In this case, Figure 5 The dashed line shown represents the upper end of the convex surface 305c.

[0062] The upper surface 301a of the substrate 301 is parallel to the XY plane. The first inclined surface 305a and the second inclined surface 305b are each inclined relative to the upper surface 301a of the substrate 301, i.e., the XY plane. In a cross-section perpendicular to the upper surface 301a of the substrate 301, the distance between the first inclined surface 305a and the second inclined surface 305b decreases as the distance from the upper surface 301a of the substrate 301 increases.

[0063] In this embodiment, there are multiple convex surfaces 305c, therefore, there are also multiple first inclined surfaces 305a and multiple second inclined surfaces 305b. The insulating layer 305 has multiple first inclined surfaces 305a and multiple second inclined surfaces 305b.

[0064] The insulating layer 305 also has a flat surface 305d surrounding a plurality of convex surfaces 305c. The flat surface 305d is a surface parallel to the upper surface 301a of the substrate 301. Each of the plurality of convex surfaces 305c protrudes from the flat surface 305d in the Z direction. In addition, in this embodiment, the plurality of convex surfaces 305c are arranged at predetermined intervals. Therefore, a flat surface 305d exists between two adjacent convex surfaces 305c in the V direction.

[0065] The insulating layer 305 includes a plurality of protrusions projecting in the Z direction and flat portions surrounding the protrusions. Each of the protrusions extends in a direction parallel to the U direction and has a convex surface 305c. Furthermore, the protrusions are arranged side-by-side at predetermined intervals in a direction parallel to the V direction. The thickness (dimension in the Z direction) of the flat portions is substantially constant. Additionally, the insulating layer 304 also has substantially constant thickness (dimension in the Z direction) and is formed along the lower surface of the insulating layer 305.

[0066] Multiple lower electrodes 61B are disposed on multiple first inclined surfaces 305a. Multiple lower electrodes 61C are disposed on multiple second inclined surfaces 305b. As described above, the first inclined surfaces 305a and the second inclined surfaces 305b are each inclined relative to the upper surface 301a of the substrate 301, i.e., the XY plane. Therefore, the upper surfaces of each of the multiple lower electrodes 61B and each of the multiple lower electrodes 61C are also inclined relative to the XY plane. Thus, it can also be said that multiple first MR elements 50B and multiple second MR elements 50C are disposed on inclined surfaces inclined relative to the XY plane. The insulating layer 305 is used to support each component of the multiple first MR elements 50B and multiple second MR elements 50C in an inclined manner relative to the XY plane.

[0067] Furthermore, in this embodiment, the first inclined surface 305a is curved. Therefore, the first MR element 50B is bent along the curved surface (first inclined surface 305a). In this embodiment, for convenience, the magnetization direction of the magnetization fixing layer 51 of the first MR element 50B is defined as a linear direction as described above. The magnetization direction of the magnetization fixing layer 51 of the first MR element 50B, namely the W1 direction and the -W1 direction, is also the direction of the tangent extending from the portion of the first inclined surface 305a near the first MR element 50B.

[0068] Similarly, in this embodiment, the second inclined surface 305b is curved. Therefore, the second MR element 50C is bent along the curved surface (second inclined surface 305b). In this embodiment, for convenience, the magnetization direction of the magnetization fixing layer 51 of the second MR element 50C is defined as a linear direction as described above. The magnetization direction of the magnetization fixing layer 51 of the second MR element 50C, i.e., the W2 direction and the -W2 direction, is also the direction of the tangent extending from the portion of the second inclined surface 305b near the second MR element 50C.

[0069] like Figure 5 As shown, a plurality of first MR elements 50B are arranged in a parallel configuration in both the U and V directions. On a first inclined surface 305a, the plurality of first MR elements 50B are arranged in a single column. Similarly, a plurality of second MR elements 50C are arranged in a parallel configuration in both the U and V directions. On a second inclined surface 305b, the plurality of second MR elements 50C are arranged in a single column. In this embodiment, the columns of the first MR elements 50B and the columns of the second MR elements 50C are alternately arranged in a direction parallel to the V direction.

[0070] Furthermore, when viewed from the Z direction, adjacent first MR element 50B and second MR element 50C can be offset in a direction parallel to the U direction, or they can be offset directly. Additionally, when viewed from the Z direction, two adjacent first MR elements 50B holding a second MR element 50C can be offset in a direction parallel to the U direction, or they can be offset directly. Furthermore, when viewed from the Z direction, two adjacent second MR elements 50C holding a first MR element 50B can be offset in a direction parallel to the U direction, or they can be offset directly.

[0071] Multiple first MR elements 50B are connected in series using multiple lower electrodes 61B and multiple upper electrodes 62B. Referring here... Figure 7 The connection method of multiple first MR elements 50B is described in detail. Figure 7 In the diagram, symbol 61 represents the lower electrode corresponding to any MR element 50, and symbol 62 represents the upper electrode corresponding to any MR element 50. For example... Figure 7 As shown, each lower electrode 61 has an elongated shape. A gap is formed between two adjacent lower electrodes 61 along their long sides. MR elements 50 are disposed near both ends of the upper surface of the lower electrodes 61 along their long sides. Furthermore, each upper electrode 62 has an elongated shape, electrically connecting two adjacent MR elements 50 disposed on adjacent lower electrodes 61 along their long sides.

[0072] Although not shown, one MR element 50 located at one end of a column of multiple MR elements 50 arranged side-by-side is connected to another MR element 50 located at one end of a column of multiple other MR elements 50 adjacent to it in a direction intersecting the long side direction of the lower electrode 61. The two MR elements 50 are connected to each other using an electrode not shown. The electrode not shown could also be an electrode connecting the lower surfaces or upper surfaces of the two MR elements 50 to each other.

[0073] exist Figure 7 When the MR element 50 shown is the first MR element 50B, Figure 7 The lower electrode 61 shown corresponds to the lower electrode 61B. Figure 7 The upper electrode 62 shown corresponds to the upper electrode 62B. Furthermore, in this case, the long side direction of the lower electrode 61 is parallel to the U direction.

[0074] Similarly, multiple second MR elements 50C are connected in series using multiple lower electrodes 61C and multiple upper electrodes 62C. The description of the connection method for the multiple first MR elements 50B described above also applies to the connection method for the multiple second MR elements 50C. Figure 7 When the MR element 50 shown is the second MR element 50C, Figure 7 The lower electrode 61 shown corresponds to the lower electrode 61C. Figure 7 The upper electrode 62 shown corresponds to the upper electrode 62C. Furthermore, in this case, the long side direction of the lower electrode 61 is parallel to the U direction.

[0075] Each of the multiple upper coil elements 82 extends in a direction parallel to the Y direction. Furthermore, the multiple upper coil elements 82 are arranged side-by-side in the X direction. In this embodiment, specifically, when viewed from the Z direction, two upper coil elements 82 overlap with each of the multiple first MR elements 50B and the multiple second MR elements 50C.

[0076] Multiple lower coil elements 81 each extend in a direction parallel to the Y direction. Furthermore, the multiple lower coil elements 81 are arranged side-by-side in the X direction. The shape and arrangement of the multiple lower coil elements 81 may be the same as or different from the shape and arrangement of the multiple upper coil elements 82. Figure 5 and Figure 6 In the example shown, the X-direction dimension of each of the plurality of lower coil elements 81 is smaller than the X-direction dimension of each of the plurality of upper coil elements 82. Furthermore, the spacing between two adjacent lower coil elements 81 in the X-direction is smaller than the spacing between two adjacent upper coil elements 82 in the X-direction.

[0077] exist Figure 5 and Figure 6In the example shown, multiple lower coil elements 81 and multiple upper coil elements 82 are electrically connected to form a coil 80 that applies a magnetic field parallel to the X-direction to the free layers 53 of each of the multiple first MR elements 50B and the multiple second MR elements 50C. Alternatively, the coil 80 may be configured, for example, to apply an X-direction magnetic field to the free layers 53 in the first and second resistor sections R21, R22 of the first detection circuit 20 and the first and second resistor sections R31, R32 of the second detection circuit 30, and to apply a -X-direction magnetic field to the free layers 53 in the third and fourth resistor sections R23, R24 of the first detection circuit 20 and the third and fourth resistor sections R33, R34 of the second detection circuit 30. Furthermore, the coil 80 may also be controlled by a processor 40.

[0078] Next, the first and second detection signals will be explained. First, refer to... Figure 3 The first detection signal will be explained. When the intensity of the component of the object's magnetic field parallel to the W1 direction changes, the resistance values ​​of the resistors R21 to R24 in the first detection circuit 20 change in such a way that the resistance values ​​of resistors R22 and R24 decrease as the resistance values ​​of resistors R21 and R23 increase, or the resistance values ​​of resistors R22 and R24 increase as the resistance values ​​of resistors R21 and R23 decrease. As a result, the potentials of the signal output terminals E21 and E22 change. The first detection circuit 20 is configured to generate a signal corresponding to the potential of the signal output terminal E21 as the first detection signal S21, and to generate a signal corresponding to the potential of the signal output terminal E22 as the first detection signal S22.

[0079] Next, refer to Figure 4 The second detection signal will be explained. When the intensity of the component of the object's magnetic field parallel to the W2 direction changes, the resistance values ​​of the resistors R31 to R34 in the second detection circuit 30 change such that the resistance values ​​of resistors R32 and R34 decrease as the resistance values ​​of resistors R31 and R33 increase, or vice versa. This causes a change in the potentials of the signal output terminals E31 and E32. The second detection circuit 30 is configured to generate a signal corresponding to the potential of the signal output terminal E31 as the second detection signal S31, and to generate a signal corresponding to the potential of the signal output terminal E32 as the second detection signal S32.

[0080] Next, the operation of the processor 40 will be explained. The processor 40 is configured to generate a first detection value and a second detection value based on the first detection signals S21 and S22 and the second detection signals S31 and S32. The first detection value is the detection value corresponding to the component of the object's magnetic field parallel to the V direction. The second detection value is the detection value corresponding to the component of the object's magnetic field parallel to the Z direction. Hereinafter, the first detection value will be represented by the notation Sv, and the second detection value will be represented by the notation Sz.

[0081] Processor 40 generates the first and second detection values ​​Sv and Sz in the following manner, for example. Processor 40 first generates value Sa by an operation including calculating the difference S21-S22 between the first detection signal S21 and the first detection signal S22, and generates value Sb by an operation including calculating the difference S31-S32 between the second detection signal S31 and the second detection signal S32. Then, processor 40 calculates values ​​Sc and Sd using the following equations (1) and (2).

[0082] Sc=(Sb+Sa) / (2cosα)…(1)

[0083] Sd=(Sb-Sa) / (2sinα)…(2)

[0084] The first detection value Sv can be the value Sc itself, or it can be a value to which a specified correction, such as gain adjustment and bias adjustment, has been applied to the value Sc. Similarly, the second detection value Sz can be the value Sd itself, or it can be a value to which a specified correction, such as gain adjustment and bias adjustment, has been applied to the value Sd.

[0085] Next, the structural features of the magnetic sensor 1 of this embodiment will be described. Here, the component combining the MR element 50 and the lower electrode 61 is referred to as the MR element structure and is indicated by the symbol 70. The MR element structure 70 includes the lower electrode 61 and the MR element 50 disposed on the lower electrode 61. The MR element 50 includes a magnetized fixed layer 51 and a free layer 53. The MR element structure 70 is configured to allow current to flow in the stacking direction of the lower electrode 61 and the MR element 50.

[0086] First, the MR element structure 70 of the first example will be described. Figure 8 This is a cross-sectional view of the MR element structure 70 in the first example. Figure 9 It means Figure 8 The cross-sectional view of the MR element 50 and the lower electrode 61 of the MR element structure 70 shown.

[0087] Figure 8 This represents the section that intersects the MR element 50, which is disposed on any inclined plane 305e, and is parallel to the VZ plane. Hereinafter, the section parallel to the VZ plane will be referred to as the VZ section. Figure 6same, Figure 8 The VZ section shown can also be the VZ section of the MR element 50 viewed from a position located in front in the U direction. In this case, the MR element 50, the lower electrode 61, and the inclined surface 305e correspond to the first MR element 50B, the lower electrode 61B, and the first inclined surface 305a, respectively. Or, Figure 8 The VZ section shown can also be the VZ section of the MR element 50 viewed from a position in front of it in the -U direction. In this case, the MR element 50, the lower electrode 61, and the inclined surface 305e correspond to the second MR element 50C, the lower electrode 61C, and the second inclined surface 305b, respectively.

[0088] Here, as Figure 8 and Figure 9 As shown, a first direction D1 and a second direction D2 parallel to the VZ plane are defined. The first direction D1 is along the direction of the inclined surface 305e and away from the reference plane. In this embodiment, the upper surface 301a of the substrate 301 (refer to...) Figure 6 Let the reference plane be defined. The Z direction is a direction perpendicular to the reference plane (the upper surface 301a of the substrate 301). The second direction D2 is a direction along the inclined surface 305e and close to the reference plane (the upper surface 301a of the substrate 301).

[0089] Furthermore, in the following description, the direction along the inclined surface 305e and parallel to the first direction D1 (the direction parallel to the second direction D2) will be simply referred to as the direction along the inclined surface 305e. This direction is also the direction along the inclined surface 305e and the direction in which the distance from the reference plane (the upper surface 301a of the substrate 301) varies.

[0090] The MR element 50 has a lower surface 50a opposite to the inclined surface 305e, an upper surface 50b opposite to the lower surface 50a, a first side surface 50c, and a second side surface 50d. The first side surface 50c connects the end of the lower surface 50a in a first direction D1 and the end of the upper surface 50b in a first direction D1. Viewed from the first side surface 50c, the second side surface 50d is positioned in front of the lower surface 50a in a second direction D2. The second side surface 50d connects the end of the lower surface 50a in a second direction D2 and the end of the upper surface 50b in a second direction D2.

[0091] exist Figure 8 In this embodiment, the symbol P1 represents an imaginary plane that intersects the MR element 50 and is perpendicular to the inclined surface 305e. Specifically, the upper surface 50b of the MR element 50 is curved. Figure 8When the upper surface 50b of the MR element 50 shown is considered as part of a cylindrical surface, the imaginary plane P1 includes the central axis C1 of the cylindrical surface and intersects the MR element 50. Furthermore, the imaginary plane P1 intersects the center of the upper surface 50b along the direction of the inclined surface 305e.

[0092] like Figure 8 As shown, a portion of the first side surface 50c is inclined such that the distance between the portion of the first side surface 50c and the imaginary plane P1 increases as it approaches the lower electrode 61. Similarly, the second side surface 50d is inclined such that the distance between the second side surface 50d and the imaginary plane P1 increases as it approaches the lower electrode 61. Furthermore, the distance between the first side surface 50c and the second side surface 50d increases as it approaches the lower electrode 61.

[0093] In any cross-section parallel to the VZ plane, the second side 50d of the MR element 50 has a different shape than the first side 50c of the MR element 50. Specifically, the second side 50d has an asymmetrical shape relative to the first side 50c, centered on an imaginary plane P1. In any cross-section parallel to the inclined plane 305e, the distance between the first side 50c and the imaginary plane P1 is greater than the distance between the second side 50d and the imaginary plane P1 in the portion near the upper surface 61b of the lower electrode 61. Outside the portion near the upper surface 61b of the lower electrode 61, the distance between the first side 50c and the imaginary plane P1 can also be equal to the distance between the second side 50d and the imaginary plane P1.

[0094] like Figure 9 As shown, the first side surface 50c includes a first portion S1 and a second portion S2 that form different angles with respect to the inclined surface 305e. In the first example, in particular, the first portion S1 forms an angle of 0 or approximately 0 with respect to the inclined surface 305e. The first portion S1 extends along the upper surface 61b of the lower electrode 61.

[0095] The second part S2 is positioned further away from the inclined surface 305e than the first part S1. The angle between the second part S2 and the inclined surface 305e is greater than the angle between the first part S1 and the inclined surface 305e. Furthermore, the angle between the second part S2 and the direction parallel to the Z-direction is smaller than the angle between the first part S1 and the direction parallel to the Z-direction. Additionally, the second part S2, as it approaches the lower electrode 61, and the imaginary plane P1 (see reference...) Figure 8 The distance between the two parts increases in a tilted manner. The distance between the second part S2 and the imaginary plane P1 becomes less than the minimum distance between the first part S1 and the imaginary plane P1.

[0096] exist Figure 9 In the example shown, the first part S1 and the second part S2 are each curved surfaces. The angle between the first part S1 and the inclined surface 305e can also be the angle between a first tangent and a second tangent parallel to the VZ plane. The first tangent is a tangent line tangent to any first point on the first part S1. The second tangent line is a tangent line tangent to the inclined surface 305e near the first point. Furthermore, when the first and second tangent lines are parallel to each other, the angle between the first part S1 and the inclined surface 305e is 0. The angle between the second part S2 and the inclined surface 305e can also be defined in the same way as the angle between the first part S1 and the inclined surface 305e. Furthermore, the first part S1 and the second part S2 are not limited to curved surfaces; they can also be planes.

[0097] As described above, the MR element 50 includes a magnetized fixed layer 51 as a first magnetic layer and a free layer 53 as a second magnetic layer. In this embodiment, the magnetized fixed layer 51 is located between the inclined surface 305e and the free layer 53. At least a portion of the first portion S1 is formed by the side surface of the magnetized fixed layer 51. At least a portion of the second portion S2 is formed by the side surface of the free layer 53. In the first example, in particular, the second portion S2 is formed by the side surface of the magnetized fixed layer 51 in addition to the side surface of the free layer 53. That is, the second portion S2 is formed from the magnetized fixed layer 51 throughout the free layer 53.

[0098] The first side 50c also includes a third part S3. The third part S3 is positioned closer to the inclined surface 305e than the first part S1. Furthermore, viewed from the first part S1, the third part S3 is positioned in front of the first direction D1.

[0099] like Figure 9 As shown, the second side surface 50d includes a fourth portion S4 and a fifth portion S5, each with a different angle relative to the inclined surface 305e. The fifth portion S5 is positioned further away from the inclined surface 305e than the fourth portion S4. The angle between the fifth portion S5 and the inclined surface 305e is greater than the angle between the fourth portion S4 and the inclined surface 305e. Furthermore, the angle between the fifth portion S5 and the direction parallel to the Z-direction is smaller than the angle between the fourth portion S4 and the direction parallel to the Z-direction.

[0100] The fourth part S4 approaches the lower electrode 61, and the fourth part S4 and the imaginary plane P1 (refer to) Figure 8 The fifth part S5 tilts in such a way that the distance between them increases. Similarly, the fifth part S5 and the imaginary plane P1 (see reference) tilt as they approach the lower electrode 61. Figure 8The distance between them increases in a tilted manner. The distance between the fifth part S5 and the imaginary plane P1 becomes less than the minimum distance between the fourth part S4 and the imaginary plane P1.

[0101] exist Figure 9 In the example shown, the fourth part S4 and the fifth part S5 are each curved surfaces. However, the fourth part S4 and the fifth part S5 could also be planes.

[0102] At least a portion of the fourth part S4 is formed by the side surface of the magnetized fixing layer 51. At least a portion of the fifth part S5 is formed by the side surface of the free layer 53. Alternatively, the entire fourth part S4 may be formed by the side surface of the magnetized fixing layer 51, and the entire fifth part S5 may be formed by the side surface of the free layer 53. Or, a portion of each of the fourth part S4 and the fifth part S5 may be formed by the side surface of the gap layer 52. In this case, the boundary between the first part S1 and the second part S2 may also exist on the side surface of the gap layer 52.

[0103] like Figure 8 As shown, the lower electrode 61 has a lower surface 61a opposite to the inclined surface 305e, an upper surface 61b opposite to the lower surface 61a, a third side surface 61c, and a fourth side surface 61d. The third side surface 61c connects the end of the lower surface 61a in the first direction D1 and the end of the upper surface 61b in the first direction D1.

[0104] The fourth side 61d is positioned in front of the third side 61c along the upper surface of the insulating layer 305. Here, a first and a second example of the fourth side 61d will be described. First, referring to… Figure 10 The first example of the fourth side 61d will be explained. Figure 10 This is a cross-sectional view showing a first example of the fourth side surface 61d. In this first example, the lower electrode 61 is formed from the inclined surface 305e to the flat surface 305d. The fourth side surface 61d is above the flat surface 305d and connects the end of the lower surface 61a and the end of the upper surface 61b located above the flat surface 305d.

[0105] Next, refer to Figure 11 The second example of the fourth side 61d will be explained. Figure 11 This is a cross-sectional view showing a second example of the fourth side surface 61d. In this second example, the lower electrode 61 is entirely disposed on the inclined surface 305e. The fourth side surface 61d is located on the inclined surface 305e. The fourth side surface 61d connects the end of the lower surface 61a in the second direction D2 and the end of the upper surface 61b in the second direction D2.

[0106] In addition, Figure 6 The middle indicates that it has Figure 11The lower electrode 61 of the fourth side surface 61d shown. However, Figure 6 The lower electrode 61 can also have Figure 10 The fourth side 61d is shown.

[0107] The MR element structure 70 has a lower surface 70a opposite to the inclined surface 305e and an upper surface 70b opposite to the lower surface 70a. The lower surface 70a of the MR element structure 70 is formed by the lower surface 61a of the lower electrode 61. The upper surface 70b of the MR element structure 70 is formed by the upper surface 50b of the MR element 50.

[0108] The MR element structure 70 also has a first surface 70c that connects the lower surface 70a and the upper surface 70b. The first surface 70c is composed of the first side surface 50c of the MR element 50, the third side surface 61c of the lower electrode 61, and a portion of the upper surface 61b of the lower electrode 61 that is not covered by the MR element 50.

[0109] The first surface 70c includes two steps. Specifically, the first surface 70c includes a first step existing between the first portion S1 and the third portion S3 of the first side surface 50c, and a second step existing between the third portion S3 of the first side surface 50c and the third side surface 61c of the lower electrode 61. The first step exists in the MR element 50 of the MR element structure 70. The second step exists between the MR element 50 and the lower electrode 61.

[0110] The MR element structure 70 also has a second surface 70d that connects the lower surface 70a and the upper surface 70b in a direction along the upper surface of the insulating layer 305 away from the first surface 70c. The second surface 70d is formed by the second side surface 50d of the MR element 50, the fourth side surface 61d of the lower electrode 61, and another portion of the upper surface 61b of the lower electrode 61 that is not covered by the MR element 50. The second surface 70d contains fewer steps than the first surface 70c. That is, the second surface 70d contains a step between the second side surface 50d and the fourth side surface 61d.

[0111] At any cross section parallel to the VZ plane, the second surface 70d has a different shape than the first surface 70c. Specifically, the second surface 70d has an asymmetrical shape relative to the first surface 70c, centered on an imaginary plane P1.

[0112] Next, the MR element structure 70 of the second example will be described. Figure 12 This is a cross-sectional view of the MR element structure 70 in the second example.

[0113] In the second example, the shape of the first side 50c of the MR element 50 differs from that in the first example. In the second example, the first side 50c of the MR element 50 does not include the third portion S3 (see reference). Figure 9 Furthermore, in the second example, in any cross-section parallel to the VZ plane, the first side 50c and the second side 50d of the MR element 50 have practically symmetrical or approximately symmetrical shapes. Specifically, the first side 50c has a shape that is symmetrical or approximately symmetrical with respect to the second side 50d about an imaginary plane P1. In any cross-section parallel to the inclined plane 305e, the distance between the first side 50c and the imaginary plane P1 is equal to or approximately equal to the distance between the second side 50d and the imaginary plane P1.

[0114] Furthermore, in the second example, the descriptions of the fourth and fifth parts S4 and S5 of the second side 50d in the first example also apply to the first and second parts S1 and S2 of the first side 50c in the second example (see...). Figure 9 If the fourth and fifth parts S4 and S5 in the description of the second side 50d in the first example are replaced with the first and second parts S1 and S2 respectively, then it becomes the description of the first and second parts S1 and S2 of the first side 50c in the second example.

[0115] In the second example, the upper surface 61b of the lower electrode 61 includes a first portion 61b1, a second portion 61b2, and a third portion 61b3. The MR element 50 is disposed on the first portion 61b1. The second portion 61b2 is connected to the third side surface 61c of the lower electrode 61. The first and second portions 61b1 and 61b2 each extend along the inclined surface 305e. The second portion 61b2 is disposed closer to the inclined surface 305e than the first portion 61b1. The third portion 61b3 connects the first portion 61b1 and the second portion 61b2.

[0116] In the second example, the first surface 70c of the MR element structure 70 is composed of a first side surface 50c of the MR element 50, a portion of the first portion 61b1 of the upper surface 61b not covered by the MR element 50, second and third portions 61b2 and 61b3 of the upper surface 61b, and a third side surface 61c. The first surface 70c includes a first step existing between the first side surface 50c of the MR element 50 and the third portion 61b3 of the upper surface 61b of the lower electrode 61, and a second step existing between the third side surface 61c of the lower electrode 61 and the third portion 61b3 of the upper surface 61b of the lower electrode 61. The first step exists between the MR element 50 and the lower electrode 61. The second step exists on the lower electrode 61.

[0117] Next, the function and effect of the magnetic sensor 1 in this embodiment will be explained. In this embodiment, the first surface 70c of the MR element structure 70 includes a first step and a second step. In the first example, the first step exists in the MR element 50 of the MR element structure 70. Assuming that the first step does not exist, the first side surface 50c of the MR element 50 changes smoothly from the lower surface 50a to the upper surface 50b of the MR element 50. When the dimensions of the lower surface 50a and the upper surface 50b of the MR element 50 along the direction of the inclined surface 305e are set to be the same and compared, the distance between the first side surface 50c of the MR element 50 and the upper electrode 62 is larger than when the first step does not exist. Therefore, according to this embodiment, short circuit between the first side surface 50c and the upper electrode 62 can be suppressed.

[0118] Furthermore, in the second example, a second step is formed on the lower electrode 61. Therefore, with this embodiment, the distance between the lower electrode 61 and the upper electrode 62 can be increased compared to the case where the second step is absent. Thus, with this embodiment, short circuits between the lower electrode 61 and the upper electrode 62 can be suppressed.

[0119] Furthermore, in this embodiment, the magnetization fixing layer 51 is located between the inclined surface 305e and the free layer 53. When the dimensions of the upper surface 50b of the MR element 50 along the direction of the inclined surface 305e are set to be the same and compared, the size of the magnetization fixing layer 51 along the direction of the inclined surface 305e is larger than that of the first side surface 50c, which does not include the first portion S1. Therefore, with this embodiment, the volume of the magnetization fixing layer 51 can be increased, and the misalignment of the magnetization direction of the magnetization fixing layer 51 can be suppressed.

[0120] Furthermore, in this embodiment, the second side surface 50d includes a fourth portion S4 and a fifth portion S5 with different angles relative to the inclined surface 305e. Specifically, in this embodiment, the angle between the fifth portion S5 and the inclined surface 305e is greater than the angle between the fourth portion S4 and the inclined surface 305e. When the second side surface 50d does not include the fifth portion S5, that is, when the entire second side surface 50d is actually the fourth portion S4, the angle between the second side surface 50d and the inclined surface 305e becomes smaller overall. In this case, the second side surface 50d becomes a gently tapered shape. The area of ​​the upper electrode 62 opposite to the second side surface 50d increases as the tapering becomes gentler.

[0121] In contrast, in this embodiment, the second side surface 50d includes a fifth portion S5 in addition to the fourth portion S4. When the dimensions of the lower surface 50a of the MR element 50 along the inclined surface 305e are set to be the same and compared, the area of ​​the upper electrode 62 and the second side surface 50d relative to each other is smaller than when the second side surface 50d does not include the fifth portion S5. Therefore, with this embodiment, short circuits between the second side surface 50d and the upper electrode 62 can be suppressed.

[0122] Furthermore, in this embodiment, at least a portion of the fourth part S4 belongs to the magnetized fixed layer 51. At least a portion of the fifth part S5 belongs to the free layer 53. When the dimensions of the upper surface 50b of the MR element 50 along the direction of the inclined plane 305e are set to be the same and compared, the dimension of the free layer 53 along the direction of the inclined plane 305e is smaller than that of the second side 50d, which does not include the fifth part S5. The direction along the inclined plane 305e is orthogonal to the long side direction (the direction parallel to the U direction) of the MR element 50, that is, the short side direction of the MR element 50. Therefore, by means of this embodiment, the dimension of the short side direction of the MR element 50 can be reduced, thereby suppressing the reduction of shape anisotropy (shape magnetic anisotropy) of the free layer 53.

[0123] Furthermore, the shape anisotropy (shape magnetic anisotropy) of the free layer 53 also changes depending on the angle formed by the side surface of the free layer 53 (a portion of the second side surface 50d) relative to the inclined surface 305e. That is, as the angle decreases, the shape anisotropy (shape magnetic anisotropy) of the free layer 53 decreases. In this embodiment, a fifth portion S5 is formed on the free layer 53, therefore, compared to the case where the fifth portion S5 does not exist, the angle increases. Thus, with this embodiment, the decrease in the shape anisotropy (shape magnetic anisotropy) of the free layer 53 can be suppressed.

[0124] Furthermore, in this embodiment, when the dimensions of the upper surface 50b of the MR element 50 along the direction of the inclined surface 305e are set to be the same and compared, the dimension of the magnetization fixing layer 51 along the direction of the inclined surface 305e becomes larger than that of the second side surface 50d, which does not include the fourth portion S4. Therefore, through this embodiment, the volume of the magnetization fixing layer 51 can be increased, and the misalignment of the magnetization direction of the magnetization fixing layer 51 can be suppressed.

[0125] Here, the third example of the MR element structure 70 will be briefly described. The third example of the MR element structure 70 includes the second example of the MR element 50 and the lower electrode 61 of the first example. In this embodiment, the group of the first or second example of the MR element 50 and the third example of the MR element 50 can be set as the group of the first MR element 50B and the second MR element 50C of this embodiment. For example, the first MR element 50B can be set as the first or second example of the MR element 50, and the second MR element 50C can be set as the third example of the MR element 50. In this case, the first and second surfaces 70c and 70d of the MR element structure 70 including the second MR element 50C each include a step.

[0126] Alternatively, both the first MR element 50B and the second MR element 50C can be set as the MR element 50 of the first or second example.

[0127] [Variation Example]

[0128] Next, the first and second modifications of the magnetic sensor 1 of this embodiment will be described. First, referring to... Figure 13 and Figure 14 The first variation will be explained. Figure 13 This is a cross-sectional view showing the MR element structure in the first modified example. Figure 14 It means Figure 13 The diagram shows a cross-sectional view of the magnetoresistive element and the lower electrode of the MR element structure.

[0129] Figure 13 The VZ section is shown, intersecting the MR element 50 disposed on an arbitrary inclined plane 305f. Figure 6 Similarly, the VZ section can also be the VZ section of the MR element 50 viewed from a position located in front in the U direction. In this case, the MR element 50, the lower electrode 61, and the inclined surface 305f correspond to the second MR element 50C, the lower electrode 61C, and the second inclined surface 305b, respectively. Alternatively, Figure 13 The VZ section shown can also be the VZ section of the MR element 50 viewed from a position in front of it in the -U direction. In this case, the MR element 50, the lower electrode 61, and the inclined surface 305f correspond to the first MR element 50B, the lower electrode 61B, and the first inclined surface 305a, respectively.

[0130] Here, as Figure 13 and Figure 14As shown, a third direction D3 and a fourth direction D4 are defined parallel to the VZ plane. The third direction D3 is along the inclined surface 305f and away from the reference plane (the upper surface 301a of the substrate 301). The fourth direction D4 is along the inclined surface 305f and close to the reference plane (the upper surface 301a of the substrate 301).

[0131] Furthermore, in the following description, the direction along the inclined surface 305f and parallel to the third direction D3 (the direction parallel to the fourth direction D4) will be simply referred to as the direction along the inclined surface 305f. This direction is also the direction along the inclined surface 305f and the direction in which the distance from the reference plane (the upper surface 301a of the substrate 301) varies.

[0132] exist Figure 13 In the diagram, symbol P2 represents an imaginary plane that intersects with MR element 50 and is perpendicular to inclined plane 305f. Figure 13 When the upper surface 50b of the MR element 50 shown is considered as part of a cylindrical surface, the imaginary plane P2 includes the central axis C2 of the cylindrical surface and intersects the MR element 50. Furthermore, the imaginary plane P2 intersects the center of the upper surface 50b along the direction of the inclined surface 305f.

[0133] The description of the MR element structure 70 in the first example, except for several points mentioned below, also applies to the MR element structure 70 in the first modified example. If the inclined surface 305e, the first direction D1, the second direction D2, and the imaginary plane P1 in the description of the MR element structure 70 in the first example are replaced with the inclined surface 305f, the third direction D3, the fourth direction D4, and the imaginary plane P2, respectively, then it becomes the description of the MR element structure 70 in the first modified example.

[0134] In the first variation, the shape of the first side 50c of the MR element 50 differs from that in the first example. In the first variation, the first side 50c does not include the third portion S3.

[0135] Furthermore, in the first modified example, the first surface 70c of the MR element structure 70 is formed by the first side surface 50c of the MR element 50 and the third side surface 61c of the lower electrode 61. The first surface 70c includes a step existing between the second portion S2 of the first side surface 50c and the third side surface 61c of the lower electrode 61.

[0136] Next, refer to Figure 15 The second variation will be explained. Figure 15 This is a cross-sectional view showing the MR element structure in the second variation.

[0137] In the second variation, the shape of the first side surface 50c of the MR element 50 differs from that of the first variation. In the second variation, the first portion S1 of the first side surface 50c is formed not only by the side surface of the magnetized fixed layer 51 but also by the side surface of the free layer 53. That is, the first portion S1 is formed from the magnetized fixed layer 51 throughout the free layer 53.

[0138] [Second Implementation]

[0139] Next, refer to Figure 16 The magnetic sensor 1 according to the second embodiment of the present invention will be described. Figure 16 This is a cross-sectional view showing a portion of the magnetic sensor 1 in this embodiment.

[0140] In this embodiment, the overall shape of each of the plurality of convex surfaces 305c of the insulating layer 305 is such that Figure 16 The triangular shape of the convex surface 305c shown is formed by moving it along a direction parallel to the U direction to create a triangular roof shape. Furthermore, the plurality of first inclined surfaces 305a and the plurality of second inclined surfaces 305b of the insulating layer 305 are each planar. The plurality of first inclined surfaces 305a are each a plane parallel to both the U and W1 directions. The plurality of second inclined surfaces 305b are each a plane parallel to both the U and W2 directions.

[0141] and Figure 6 Similarly, as shown in the example, the insulating layer 305 may also include multiple protrusions forming multiple convex surfaces 305c. Alternatively, the insulating layer 305 may also include multiple grooves arranged side by side in a direction parallel to the V direction. Each of the multiple grooves has a first wall surface corresponding to the first inclined surface 305a and a second wall surface corresponding to the second inclined surface 305b. A convex surface 305c is formed by the first wall surface of one groove and the second wall surface of another groove adjacent to the -V direction side of that groove.

[0142] In addition, Figure 16 In the example shown, each of the multiple slots also has a bottom surface corresponding to the flat surface 305d. However, each of the multiple slots may also not have a bottom surface.

[0143] The other structures, functions, and effects of this embodiment are the same as those of the first embodiment.

[0144] Furthermore, the present invention is not limited to the embodiments described above and various modifications are possible. For example, as long as the main conditions of the claims are met, the shapes of the first and second surfaces 70c and 70d of the MR element structure 70 are not limited to the examples shown in the embodiments and are arbitrary. The first surface 70c may also contain more than three steps. In this case, the second surface 70d may also contain a number of steps less than the number of steps on the first surface 70c.

[0145] Additionally, the magnetic sensor 1 may also include a third detection circuit configured to detect a component of the object's magnetic field in a direction parallel to the XY plane and generate at least one third detection signal corresponding to that component. In this case, the processor 40 may also be configured to generate a detection value corresponding to the component of the object's magnetic field in a direction parallel to the U direction based on at least one third detection signal. The third detection circuit may be integrated with the first and second detection circuits 20 and 30, or it may be contained in a different chip than the first and second detection circuits 20 and 30.

[0146] As described above, the magnetic sensor of the present invention comprises: a substrate having a reference plane; a support member disposed on the substrate having an inclined surface inclined relative to the reference plane; and a magnetic detection element structure disposed on the inclined surface and having a lower surface opposite to the inclined surface, an upper surface opposite to the lower surface, and a first surface connecting the lower surface and the upper surface and including two steps.

[0147] In the magnetic sensor of the present invention, the magnetic detection element structure may further have a second surface that connects the lower surface and the upper surface in a direction away from the first surface along the inclined surface. The second surface may also have an asymmetrical shape relative to the first surface, centered on an imaginary plane that intersects the magnetic detection element structure and is perpendicular to the inclined surface. The second surface may also include fewer steps than the first surface.

[0148] Furthermore, in the magnetic sensor of the present invention, the magnetic detection element structure may also include a lower electrode and a magnetic detection element disposed on the lower electrode, configured to allow current to flow in the stacking direction of the lower electrode and the magnetic detection element. The magnetic detection element may also include: a free layer having magnetization whose direction can change according to an external magnetic field; and a magnetization-fixed layer having magnetization whose direction is fixed and located between the free layer and the inclined surface. One of the two steps may exist in the magnetic detection element, and the other of the two steps may exist between the magnetic detection element and the lower electrode. Alternatively, one of the two steps may exist between the magnetic detection element and the lower electrode, and the other of the two steps may exist in the lower electrode.

[0149] In addition, in the magnetic sensor of the present invention, the first surface may include a curved portion.

[0150] Furthermore, in the magnetic sensor of the present invention, the inclined surface can be a curved surface. Alternatively, the inclined surface can also be a plane.

[0151] Additionally, the magnetic sensor of the present invention may also include an insulating layer and an upper electrode. The magnetic detection element structure may also include a lower electrode and a magnetic detection element disposed on the lower electrode. The upper electrode may also be disposed at a position that clamps the magnetic detection element between the upper electrode and the lower electrode. The insulating layer may also be disposed around the magnetic detection element structure between the lower electrode and the upper electrode.

[0152] Furthermore, in the magnetic sensor of the present invention, the support member may also have a convex surface extending away from the reference plane. The convex surface may also include an inclined surface and another inclined surface inclined relative to the reference plane and oriented in a direction different from the inclined surface. In this case, the magnetic sensor of the present invention may also include another magnetic detection element structure disposed on another inclined surface and having a lower surface opposite to the other inclined surface, an upper surface opposite to the lower surface, and two surfaces connecting the lower surface and the upper surface. Each of the two surfaces of the other magnetic detection element structure may also include fewer steps than the first surface.

[0153] Based on the above description, various modes and variations of the present invention can be implemented. Therefore, within the equivalent scope of the claims, the present invention can be implemented even in modes other than the preferred mode described above.

Claims

1. A magnetic sensor, characterized by Possessing: a substrate having a reference plane; a support member disposed on the substrate and having an inclined surface inclined with respect to the reference plane; and a magnetic detection element structure disposed on the inclined surface and having a lower surface opposite the inclined surface, an upper surface on the opposite side of the lower surface, and a first surface connecting the lower surface and the upper surface and including two steps.

2. The magnetic sensor according to claim 1, characterized in that the magnetic detection element structure further has a second surface connecting the lower surface and the upper surface in front in a direction away from the first surface along the inclined surface.

3. The magnetic sensor according to claim 2, characterized in that the second surface has a shape asymmetric with respect to the first surface with a virtual plane crossing the magnetic detection element structure and perpendicular to the inclined surface as a center.

4. The magnetic sensor according to claim 3, characterized in that the second surface includes fewer steps than the first surface.

5. The magnetic sensor according to claim 1, characterized in that the magnetic detection element structure includes a lower electrode and a magnetic detection element disposed on the lower electrode, and is configured to pass a current in a direction of a stack of the lower electrode and the magnetic detection element.

6. The magnetic sensor according to claim 5, characterized in that the magnetic detection element includes: a free layer having magnetization whose direction can change according to an external magnetic field; and a magnetization fixed layer having magnetization whose direction is fixed and interposed between the free layer and the inclined surface.

7. The magnetic sensor according to claim 5, characterized in that one of the two steps is present in the magnetic detection element, and the other of the two steps is present between the magnetic detection element and the lower electrode.

8. The magnetic sensor according to claim 5, characterized in that one of the two steps is present between the magnetic detection element and the lower electrode, and the other of the two steps is present in the lower electrode.

9. The magnetic sensor according to claim 1, characterized in that the first surface includes a curved surface portion.

10. The magnetic sensor according to claim 1, characterized in that the inclined surface is a curved surface.

11. The magnetic sensor according to claim 1, characterized in that the inclined surface is a flat surface.

12. The magnetic sensor according to claim 1, characterized in that further comprising an insulating layer and an upper electrode, the magnetic detection element structure includes a lower electrode and a magnetic detection element disposed on the lower electrode, the upper electrode is disposed at a position sandwiching the magnetic detection element between the upper electrode and the lower electrode, the insulating layer is disposed around the magnetic detection element structure between the lower electrode and the upper electrode.

13. The magnetic sensor according to claim 1, characterized in that the support member has a convex surface extending in a direction away from the reference plane, the convex surface includes the inclined surface and another inclined surface inclined with respect to the reference plane and oriented in a different direction from the inclined surface.

14. The magnetic sensor according to claim 13, characterized by further provided with another magnetic detection element structure body disposed on the other inclined surface and having a lower surface opposite to the other inclined surface, an upper surface on the opposite side of the lower surface, and two surfaces connecting the lower surface and the upper surface, the two surfaces of the other magnetic detection element structure body each include a smaller number of steps than the first surface.

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