A method for repairing ceramic parts for wafer processing

Abstract

The present invention discloses a method for repairing a ceramic component for wafer processing, comprising: repairing defects on the surface of the ceramic component for wafer processing; repairing defects on the edge of the ceramic component for wafer processing; repairing defects on the through-hole of the ceramic component for wafer processing; repairing wear on the surface of the ceramic component for wafer processing; and testing the repaired ceramic component for wafer processing. The repair method not only repairs wear on the surface of the ceramic component for wafer processing, but also repairs defects on the surface, edge, and through-hole of the ceramic component. By repairing defects on the surface, edge, and through-hole of the ceramic component caused during wafer processing, the repaired ceramic component can be used again for wafer processing, thereby reducing the cost of wafer processing.

Description

Technical Field

[0001] The present invention relates to the technical field of ceramic parts for wafer processing, and in particular to a repair method for ceramic parts for wafer processing. Background Art

[0002] In the prior art, ceramic parts are often used in wafer processing, which are easily damaged during the processing.

[0003] For example, wafers are typically attached to ceramic discs for thinning and polishing. The ceramic discs serve as the reference surface for wafer processing and directly determine the quality of the wafer after thinning or polishing. During wafer manufacturing, sapphire and silicon carbide wafers are inherently hard, and friction with the surface of the ceramic discs occurs during the placement and removal process. This wears the disc surface over time, affecting both the flatness and roughness of the disc surface, directly impacting the wafer processing quality. Furthermore, the discs are inevitably bumped during handling and processing, resulting in defects at the edges, through-holes, or surfaces.

[0004] For example, the ceramic substrate used in the PCB etching cavity transmits helium gas into the cavity through evenly distributed through-holes on the inner and outer circles. Because acid etching is used, the surface of the cavity is subjected to long-term corrosion by the acidic etching gas at a temperature of 120-180°C. This can cause single-sided corrosion and damage at the through-hole openings. This directly results in uneven flow and velocity of the etching gas, making it impossible to accurately control the etching speed, affecting the processing quality of the product.

[0005] To ensure wafer processing quality, damaged ceramic components need to be repaired or replaced. The current method for repairing ceramic components is surface grinding, which involves inserting a grinding fluid between the component and the rotating working disk of a repair device to grind the component and restore its flatness. This repair method only repairs the surface flatness of the component, such as scratches or wear, but cannot repair the edges or through-holes of the component. Damaged edges or through-holes in the component require replacement. Summary of the Invention

[0006] In order to solve the technical problem that the existing method for repairing ceramic parts for wafer processing only repairs the surface of the ceramic parts but cannot repair defects in the edges or through holes, the embodiment of the present invention provides a method for repairing ceramic parts for wafer processing.

[0007] In order to solve the above technical problems, on the one hand, an embodiment of the present invention provides a method for repairing a ceramic part for wafer processing, comprising:

[0008] Repairing defects on the surface of the ceramic component for wafer processing;

[0009] Repairing defects on the edge of the ceramic component for wafer processing;

[0010] Repairing defects on the through-hole of the ceramic component for wafer processing;

[0011] Repairing the wear on the surface of the ceramic component for wafer processing;

[0012] The repaired ceramic part for wafer processing is inspected.

[0013] In some embodiments, the inspecting the repaired ceramic component for wafer processing includes:

[0014] detecting the surface flatness of the ceramic component for wafer processing;

[0015] detecting the surface roughness of the ceramic part for wafer processing;

[0016] The parallelism of the ceramic component for wafer processing is detected.

[0017] In some embodiments, detecting the surface flatness of the wafer processing ceramic part includes:

[0018] Use a profilometer to measure the surface flatness of the ceramic part for wafer processing. The profilometer probe measures the straightness of several straight lines passing through the center of the ceramic part for wafer processing, which is the flatness. The straightness is required to be less than 0.002 mm.

[0019] And / or, the detecting the surface roughness of the ceramic part for wafer processing includes:

[0020] The roughness of the surface of the ceramic component for wafer processing is measured using a roughness measuring instrument, measuring once at the center of the ceramic component for wafer processing and once every 60°-120° along its circumference, with the roughness required to be 0.4-0.7 μm;

[0021] And / or, the detecting the parallelism of the ceramic part for wafer processing includes:

[0022] The back of the ceramic part for wafer processing is placed downward, and a sliding magnetic base and a micrometer are used in combination. The needle of the micrometer measures several straight lines passing through the center of the front of the ceramic part for wafer processing, and the error is required to be within 0.005.

[0023] In some embodiments, at least one of the steps of repairing a defect on the surface of the wafer processing ceramic piece, repairing a defect on the edge of the wafer processing ceramic piece, and repairing a defect on a through hole of the wafer processing ceramic piece comprises:

[0024] cleaning the defective parts on the ceramic part for wafer processing;

[0025] Prepare a repair material, the repair material comprising ceramic raw material powder and structural adhesive, the ceramic raw material powder containing the main crystal phase of the ceramic material, the mass ratio of the ceramic raw material powder to the structural adhesive being (1.0-2.0):1;

[0026] Applying the repair material to the defect site;

[0027] The repair material is filled in the defect area and scraped flat so that the repair material matches the shape of the defect area;

[0028] The repair material is cured to form a repair site;

[0029] The repaired portion is ground and / or polished.

[0030] In some embodiments, before applying the repair material to the defect portion, repairing the defect on the through hole of the ceramic component for wafer processing further comprises:

[0031] Inserting an insert that fits tightly with the through hole into the through hole, with one end of the insert protruding from the opening of the through hole;

[0032] After the repair material is solidified to form a repaired portion, the repairing of the defect on the through hole of the ceramic component for wafer processing further includes:

[0033] The insert is pulled out from the through hole.

[0034] In some embodiments, the main crystal phase in the ceramic material is alumina, the ceramic raw material powder contains alumina powder, the particle size of the alumina powder is 0.5-1.5 microns, the alumina powder is spherical, and the alumina content of the alumina powder is ≥99.5%.

[0035] In some embodiments, the structural adhesive is an epoxy structural adhesive, the viscosity of the epoxy structural adhesive is 25,000 cps-30,000 cps, and the temperature resistance of the epoxy structural adhesive is 350-400°C.

[0036] In some embodiments, cleaning the defective portion of the wafer processing ceramic component includes:

[0037] scrubbing the defective area;

[0038] Ultrasonic cleaning of the ceramic part is performed using an alkaline detergent aqueous solution as a cleaning solution, wherein the alkaline detergent aqueous solution comprises an alkaline detergent and water, and the mass ratio of the alkaline detergent to water is 1:(10-14);

[0039] Rinse well and dry.

[0040] In some embodiments, grinding and / or polishing the location of the repaired part includes:

[0041] Use oil stone for grinding; the coarseness of the oil stone is 700#-900#.

[0042] In some embodiments, repairing the wear on the surface of the wafer processing ceramic component includes:

[0043] Polishing the surface of the ceramic piece using a polyurethane polishing pad as a polishing pad and an aluminum oxide polishing solution as a polishing solution;

[0044] The polyurethane polishing pad has a Shore hardness of 90±8; the polyurethane polishing pad has a zirconium oxide or aluminum oxide content of 20-25%; the polyurethane polishing pad has a square groove on its surface, the square groove has a depth of 1.5-2.0 mm and a length and width of 23-27 mm;

[0045] The aluminum oxide polishing solution comprises aluminum oxide polishing liquid and water, and the mass ratio of the aluminum oxide polishing liquid to the water is 1:(6-10).

[0046] The implementation of the embodiments of the present invention has the following beneficial effects: the method for repairing ceramic parts for wafer processing not only repairs the wear on the surface of the ceramic parts for wafer processing, but also repairs the defects on the surface, edge and through-holes thereof. By repairing the defects caused on the surface, edge and through-holes of the ceramic parts during the wafer processing process, the repaired ceramic parts can be used again for wafer processing, thereby reducing the cost of wafer processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 1 is a schematic structural diagram of a ceramic component according to an embodiment of the present invention;

[0048] Figure 2 is a flow chart of a method for repairing a ceramic component for wafer processing according to an embodiment of the present invention;

[0049] Figure 3 is a flowchart of at least one of step S110a, step S110b, and step S110c in an embodiment of the present invention;

[0050] Figure 4 is another flow chart of step S110c in an embodiment of the present invention;

[0051] Figure 5 Schematic diagram of the structure of the polishing equipment in step S120 in an embodiment of the present invention;

[0052] Figure 6is a flowchart of step S130 in an embodiment of the present invention;

[0053] Figure 7 1 is a schematic diagram of detecting a ceramic part according to an embodiment of the present invention;

[0054] Figure 8 2 is another detection schematic diagram of a ceramic part according to an embodiment of the present invention. DETAILED DESCRIPTION

[0055] To make the objectives, technical solutions, and advantages of the present invention more apparent, the present invention will be further described in detail below with reference to the accompanying drawings. It is hereby stated that any directional terms such as "up," "down," "left," "right," "front," "back," "inside," and "outside" that appear or will appear herein are based solely on the accompanying drawings and are not intended to limit the present invention.

[0056] like Figure 1 As shown, Figure 1 1 is a schematic structural diagram of a ceramic component according to an embodiment of the present invention, wherein ceramic component 1 has a surface 11, an edge 12, and a through-hole 13. Defective portions 111, 112, and 113 are located on each of surface 11, edge 12, and the opening of through-hole 13. It should be understood that in actual production, the defective portions may be located at other locations, not limited to surface 11, edge 12, and through-hole 13. Furthermore, the defective portions may appear in only one or more of the following locations: surface 11, edge 12, and through-hole 13.

[0057] One embodiment of the present invention, as Figure 2 As shown, a method for repairing a ceramic part for wafer processing is provided, comprising:

[0058] S110a, repairing defects on the surface of the ceramic part for wafer processing;

[0059] S110b, repairing defects on the edge of the ceramic component used for wafer processing;

[0060] S110c, repairing a defect on a through hole of a ceramic component for wafer processing;

[0061] S120, repairing wear on the surface of a ceramic part used for wafer processing;

[0062] S130, inspecting the repaired ceramic component for wafer processing.

[0063] This method for repairing ceramic parts for wafer processing not only repairs the wear on the surface of the ceramic parts for wafer processing, but also repairs the defects on the surface, edge and through-holes thereof. By repairing the defects caused on the surface, edge and through-holes of the ceramic parts during the wafer processing, the repaired ceramic parts can be used for wafer processing again, thereby reducing the cost of wafer processing.

[0064] In some embodiments of the present invention, Figure 3 As shown, at least one of step S110a, step S110b, and step S110c includes:

[0065] S111, cleaning defective areas on ceramic parts used for wafer processing;

[0066] S112, preparing a repair material, the repair material comprising ceramic raw material powder and structural adhesive, the ceramic raw material powder containing the main crystal phase of the ceramic component material, and the mass ratio of the ceramic raw material powder to the structural adhesive is (1.0-2.0):1;

[0067] S114, applying the repair material to the defect site;

[0068] S115, filling the defect with the repair material and smoothing it out so that the repair material matches the shape of the defect;

[0069] S116, the repair material is cured to form a repair site;

[0070] S118, grinding and / or polishing the repaired portion.

[0071] In the repair method of the present invention, because the repair material contains the main crystalline phase of the ceramic component, the hardness, wear resistance, and heat resistance of the repaired area formed after the repair material cures are close to the original properties of the ceramic component. Therefore, this repair method has the advantages of good repair effect, the repair material is not easy to fall off, and it can be used for a long time. By repairing the defective area, there is no need to replace the ceramic component, which reduces the consumption of ceramic components and reduces the production cost of wafers.

[0072] In some embodiments, as Figure 4 As shown, before step S114, step S110c further includes:

[0073] S113, inserting an insert that fits tightly with the through hole into the through hole, with one end of the insert protruding from the opening of the through hole;

[0074] After step S116, step S110c further includes:

[0075] S117, pull out the insert from the through hole.

[0076] Combine Figure 1The insert 2 blocks the through-hole 13, preventing the repair material from entering the through-hole 13. It also allows the repair material to solidify, forming a repair site that matches the shape of the defect 113 at the opening of the through-hole 13. Specifically, the through-hole is a circular hole, and accordingly, the insert 2 can be a stainless steel cylindrical pin. This prevents excessive adhesion to the repair material, thereby preventing the repair site from falling out of the defect 113 when the insert 2 is removed.

[0077] Before inserting insert 2 into through-hole 13, lay ceramic component 1 flat, with the plane of the defect 113 to be repaired facing upward. The height of the stainless steel cylindrical pin is 10±2mm greater than the depth of the through-hole. This means that after insert 2 is inserted into through-hole 13, its lower end is flush with the lower opening of through-hole 13, while its upper end protrudes approximately 10±2mm beyond the upper opening of through-hole 13. This ensures that the shape of the repaired area matches the defect.

[0078] It should be noted that if the defective portion is located on the surface 11 or the edge 12 of the ceramic component 1 , the above steps S113 and S117 are not necessary.

[0079] In some embodiments, step S111 of the present invention includes:

[0080] Scrub the defect area;

[0081] Specifically, in the step of brushing the defective part, a plastic brush may be used to brush the defective part to remove dust, solid particles and other pollutants;

[0082] Ultrasonic cleaning of ceramic parts;

[0083] Specifically, a single tank cleaning machine was used with an ultrasonic frequency of 28 kHz for 20 minutes;

[0084] Rinse well and dry;

[0085] Specifically, rinse with clean water and dry by blowing.

[0086] Brushing can remove dust, solid particles, and other contaminants from the defect. However, since brushing cannot remove dirt and other contaminants adhering to the defect surface, ultrasonic cleaning is necessary for further cleaning. Flushing after ultrasonic cleaning removes detergent residue and drying prevents residual moisture from causing the repair material to fall off after curing.

[0087] In some embodiments, ultrasonically cleaning a ceramic part includes:

[0088] An alkaline detergent aqueous solution is used as the cleaning fluid;

[0089] An alkaline detergent aqueous solution comprises an alkaline cleaning agent and water. The amount of alkaline cleaning agent should be neither too low, which can result in poor cleaning results, nor too high, which can cause residual cleaning agent, increase subsequent rinsing time, and waste reagents. Therefore, the mass ratio of alkaline cleaning agent to water is 1:10-14, more preferably 1:11-13, and specifically 1:12.

[0090] In some embodiments of the present invention, step S112 includes:

[0091] Weigh appropriate amounts of glue A and glue B, and stir them thoroughly in a ratio of 2:1. After stirring, the glue A and glue B are visually mixed and there is no color difference. This is the structural adhesive.

[0092] Weigh ceramic raw material powder, add the ceramic raw material powder to the structural adhesive according to the above mass ratio, and stir thoroughly to obtain a repair material.

[0093] It should be noted that if the amount of ceramic raw material powder used is too small, the strength, hardness and other properties of the repair material after curing will not meet the requirements. If the amount of ceramic raw material powder used is too much, the bonding performance of the repair material after curing will be poor and it will easily fall off. Therefore, the mass ratio of ceramic raw material powder to structural adhesive is (1.0-2.0):1. Furthermore, the mass ratio of ceramic raw material powder to structural adhesive is (1.2-1.8):1, preferably (1.3-1.7):1, and more preferably (1.4-1.6):1.

[0094] Preferably, the mass ratio of ceramic raw material powder to structural adhesive is 1.5:1. The resulting repair material, after curing, exhibits properties such as hardness, wear resistance, and heat resistance that are closest to the original properties of the ceramic component. It also offers optimal bonding properties, ensuring long-term use without falling off.

[0095] In some embodiments, the primary crystalline phase in the ceramic component is alumina, i.e., the ceramic component is made of alumina ceramic. The raw ceramic powder comprises alumina powder having a particle size of 0.5-1.5 microns, more preferably 0.8-1.2 microns. Furthermore, the alumina powder is spherical, and the alumina content of the alumina powder is ≥ 99.5%, to match the material properties of the primary crystalline phase in the ceramic component.

[0096] In some embodiments, the structural adhesive is an epoxy structural adhesive having a viscosity of 25,000-30,000 cps, preferably 26,000-29,000 cps, and more preferably 27,000-28,000 cps. The viscosity of the epoxy structural adhesive should not be too low to prevent the repair material from flowing after being applied to the defect and having difficulty forming a stable shape. The viscosity of the epoxy structural adhesive should also not be too high to prevent the repair material from being difficult to stir and disperse during preparation, and from being difficult to apply, fill, and smooth during the repair.

[0097] The processing environment of ceramic parts is generally high temperature. In order to make the filling parts able to meet the requirements of high temperature use, epoxy structural adhesive has a temperature resistance of 350-400℃.

[0098] In some embodiments of the present invention, step S115 includes: using a scraper to fill and level the defective area with repair material, so that the repair material is aligned with the original shape of the ceramic part after filling the defective area, and the repair material is slightly higher than the surface of the ceramic part, so that it can be further polished later to make its shape closer to the original shape of the ceramic part.

[0099] In some embodiments of the present invention, step S116 includes: standing for 8-10 hours to allow the repair material to solidify to form a repaired part.

[0100] In some embodiments of the present invention, step S118 includes:

[0101] Polish with an oilstone (700#-900# grit). Specifically, use the oilstone, dipped in clean water, and polish the repaired area until it is roughly aligned with the rest of the ceramic component. After polishing, visually inspect the repair material to ensure it is fully bonded to the defective area of ​​the original ceramic component, that there are no cracks in the repaired area, and that the through-holes are unobstructed.

[0102] It should be noted that when the repaired area is on the front surface of the ceramic part attached to the wafer, it needs to be polished.

[0103] In some embodiments, step S120 of the repair method further includes:

[0104] The surface of the ceramic part is polished using a polyurethane polishing pad as the polishing pad and an aluminum oxide polishing solution as the polishing liquid.

[0105] Preferably, the polyurethane polishing pad has a Shore hardness of 90±8; the polyurethane polishing pad has a zirconium oxide or aluminum oxide content of 20-25%; the polyurethane polishing pad has a square groove on its surface, the square groove has a depth of 1.5-2.0 mm and a length and width of 23-27 mm;

[0106] The aluminum oxide polishing solution includes aluminum oxide polishing liquid and water, and the mass ratio of the aluminum oxide polishing liquid to water is 1: (6-10), more preferably 1: (7-9).

[0107] To further illustrate the steps for polishing the surface of the ceramic part, Figure 4 As shown, a polishing device 3 is provided. It should be understood that the step of polishing the plane of the ceramic piece is not limited to being performed using the polishing device 3.

[0108] Specifically, if Figure 5As shown, the polishing device 3 includes a polishing disc 31, a polishing pad 32, a pressure plate 33 and a polishing liquid delivery pipe 34. The polishing pad 32 is laid on the surface of the polishing disc 31, and the pressure plate 33 is used to press down the ceramic part 1 so that the surface of the ceramic part 1 is in contact with the surface of the polishing pad 32. The polishing liquid delivery pipe 34 delivers the polishing liquid to the ceramic part 1. The pressure plate 33 is shaped so that the center is concave 30um relative to the circumference. The pressure plate 33 descends, so that the ceramic part 1 is inside the pressure plate 33, pressing down the ceramic part 1 so that the surface of the ceramic part 1 that needs to be repaired is in contact with the polishing pad 32.

[0109] The prepared polishing liquid is added to the polishing liquid slurry barrel of the polishing device 3. The automatic stirring function is turned on to prevent the aluminum oxide powder from settling during the polishing liquid circulation process. The polishing liquid delivery pipe 34 is located above the center of the polishing plate 31 and the flow rate is set to 1000-1200 ml / min.

[0110] Set the pressure of the pressure plate 33 to 18-20g / cm2, the rotation speed to 40-45rpm, the rotation speed of the polishing plate 32 to 50-60rpm, and start polishing;

[0111] The polishing removal rate is 8-10 μm / minute. The polishing time is determined according to the effect after polishing. The surface condition of the ceramic piece 1 is removed and checked every two hours.

[0112] After visually checking that the surface has been completely polished, the ceramic piece 1 is removed and cleaned, and step S130 is performed.

[0113] In some embodiments of the present invention, Figure 6 As shown, step S130 includes:

[0114] S131, detecting the surface flatness of ceramic parts used for wafer processing;

[0115] S132, testing the surface roughness of ceramic parts used for wafer processing;

[0116] S133, detecting the parallelism of the ceramic parts used for wafer processing.

[0117] Among them, combined with reference Figure 7 and Figure 8 , step S131 includes:

[0118] Use a profilometer to measure the surface flatness of ceramic parts used for wafer processing. The profilometer probe measures the straightness of several straight lines passing through the center of the ceramic parts used for wafer processing, which is the flatness. The straightness is required to be less than 0.002mm.

[0119] Specifically, an X straight line L1 , a Y straight line L2 , and a Z straight line L3 are selected on the ceramic component 1 for detection.

[0120] Use a profilometer to measure surface flatness. The profilometer probe measures the straightness of the three straight lines X / Y / Z, which is the flatness. The straightness is required to be less than 0.002mm.

[0121] Step S132 includes:

[0122] Use a roughness measuring instrument to measure the surface roughness of the ceramic parts used for wafer processing. Measure once at the center of the ceramic parts used for wafer processing and once every 60°-120° along the circumference. The roughness is required to be 0.4-0.7um.

[0123] Specifically, a roughness measuring instrument is used to measure the surface roughness, measuring one point at the center and one point every 90° in the circumferential direction, for a total of 5 points. The roughness Ra standard is 0.4-0.7um.

[0124] Step S133 includes:

[0125] The back of the ceramic part for wafer processing is placed downwards, and a sliding magnetic base and a micrometer are used in conjunction with the micrometer. The needle of the micrometer is used to measure several straight lines on the front of the ceramic part for wafer processing that pass through its center, and the error is required to be within 0.005.

[0126] Specifically, place the ceramic part with its back facing down on a marble platform, use a sliding magnetic base and a micrometer to measure the front surface and the positions of the three X / Y / Z lines with the needle of the micrometer. The error is required to be within 0.005.

[0127] After the measurement data is qualified, the ceramic part repair is completed.

[0128] The above is a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications are also considered to be within the scope of protection of the present invention.

Claims

1. A method for repairing a ceramic part for wafer processing, characterized in that: include: Repairing defects on the surface of the ceramic component for wafer processing; Repairing defects on the edge of the ceramic component for wafer processing; Repairing defects on the through-hole of the ceramic component for wafer processing; Repairing the wear on the surface of the ceramic component for wafer processing; Testing the repaired ceramic component for wafer processing; At least one of the steps of repairing the defects on the surface of the wafer processing ceramic piece, repairing the defects on the edge of the wafer processing ceramic piece, and repairing the defects on the through hole of the wafer processing ceramic piece comprises: cleaning the defective parts on the ceramic part for wafer processing; Preparation of repair materials; Applying the repair material to the defect site; The repair material is filled in the defect area and scraped flat so that the repair material matches the shape of the defect area; The repair material is cured to form a repair site; Grinding and / or polishing the location of the repaired part; Before applying the repair material to the defect portion, the repairing of the defect on the through hole of the ceramic component for wafer processing further includes: Inserting an insert that fits tightly with the through hole into the through hole, with one end of the insert protruding from the opening of the through hole; After the repair material is solidified to form a repaired portion, the repairing of the defect on the through hole of the ceramic component for wafer processing further includes: The insert is pulled out from the through hole.

2. The method for repairing a ceramic component for wafer processing according to claim 1, wherein: The testing of the repaired ceramic component for wafer processing includes: detecting the surface flatness of the ceramic component for wafer processing; detecting the surface roughness of the ceramic part for wafer processing; The parallelism of the ceramic component for wafer processing is detected.

3. The method for repairing a ceramic component for wafer processing according to claim 2, wherein: The detecting of the surface flatness of the ceramic part for wafer processing comprises: Use a profilometer to measure the surface flatness of the ceramic part for wafer processing. The profilometer probe measures the straightness of several straight lines passing through the center of the ceramic part for wafer processing, which is the flatness. The straightness is required to be less than 0.002 mm. And / or, the detecting the surface roughness of the ceramic part for wafer processing includes: The roughness of the surface of the ceramic component for wafer processing is measured using a roughness measuring instrument, measuring once at the center of the ceramic component for wafer processing and once every 60°-120° along its circumference, with the roughness required to be 0.4-0.7 μm; And / or, the detecting the parallelism of the ceramic part for wafer processing includes: The back of the ceramic part for wafer processing is placed downward, and a sliding magnetic base and a micrometer are used in combination. The needle of the micrometer measures several straight lines passing through the center of the front of the ceramic part for wafer processing, and the error is required to be within 0.

005.

4. The method for repairing a ceramic component for wafer processing according to any one of claims 1 to 3, wherein: The repair material includes ceramic raw material powder and structural adhesive, the ceramic raw material powder contains the main crystal phase in the material of the ceramic component, and the mass ratio of the ceramic raw material powder to the structural adhesive is (1.0-2.0):

1.

5. The method for repairing a ceramic component for wafer processing according to claim 4, wherein: The main crystal phase in the ceramic material is alumina, the ceramic raw material powder contains alumina powder, the particle size of the alumina powder is 0.5-1.5 microns, the alumina powder is spherical, and the alumina content of the alumina powder is ≥99.5%.

6. The method for repairing a ceramic component for wafer processing according to claim 4, wherein: The structural adhesive is an epoxy structural adhesive, the viscosity of the epoxy structural adhesive is 25000cps-30000cps, and the temperature resistance of the epoxy structural adhesive is 350-400°C.

7. The method for repairing a ceramic component for wafer processing according to claim 1, wherein: The cleaning of the defective parts on the ceramic part for wafer processing comprises: scrubbing the defective area; Ultrasonic cleaning of the ceramic part is performed using an alkaline detergent aqueous solution as a cleaning liquid, wherein the alkaline detergent aqueous solution comprises an alkaline detergent and water, and the mass ratio of the alkaline detergent to water is 1:(10-14); Rinse well and dry.

8. The method for repairing a ceramic component for wafer processing according to claim 1, wherein: The grinding and / or polishing of the location of the repaired part includes: Use oil stone for grinding; the coarseness of the oil stone is 700#-900#.

9. The method for repairing a ceramic component for wafer processing according to any one of claims 1 to 3, wherein: The repairing of the wear on the surface of the ceramic component for wafer processing comprises: Polishing the surface of the ceramic piece using a polyurethane polishing pad as a polishing pad and an aluminum oxide polishing solution as a polishing solution; The polyurethane polishing pad has a Shore hardness of 90±8; the polyurethane polishing pad has a zirconium oxide or aluminum oxide content of 20-25%; the polyurethane polishing pad has a square groove on its surface, the square groove has a depth of 1.5-2.0 mm and a length and width of 23-27 mm; The aluminum oxide polishing solution comprises aluminum oxide polishing liquid and water, and the mass ratio of the aluminum oxide polishing liquid to the water is 1:(6-10).

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