An apparatus for preparing β-ga2o3 crystal by precise heating

Abstract

The application discloses a device for preparing beta-Ga2O3 crystal through precise heating, and relates to the technical field of beta-Ga2O3 crystal preparation. The device comprises a sintering furnace body, a crucible and beta-Ga2O3 crystal. The crucible is arranged in the sintering furnace body, and Ga2O3 melt is arranged in the crucible. The device further comprises a crystal growth mold connected with the crucible, a first insulation and heat insulation layer connected with the crucible, a second insulation and heat insulation layer connected with the crucible, an electromagnetic heating system arranged outside the crucible, a radio frequency induction heating system arranged outside the crucible and located at the top of the electromagnetic heating system, a slit arranged in the crystal growth mold, and a temperature sensing mechanism having one end connected with the electromagnetic heating system and the other end connected with the radio frequency induction heating system. The electromagnetic heating system and the radio frequency induction heating system are used for heating the crucible, so that the Ga2O3 melt is melted, and the beta-Ga2O3 crystal is grown on the crystal growth mold. The temperature sensing mechanism is used for accurately sensing and controlling the temperature of heating, so that the rapid and high-quality growth of the beta-Ga2O3 crystal is ensured.

Description

Technical Field

[0001] This invention relates to the field of β-Ga2O3 crystal preparation technology, specifically an apparatus for precisely heating and preparing β-Ga2O3 crystals. Background Technology

[0002] Semiconductor materials play an irreplaceable role in modern information-industrialized society, serving as the cornerstone of the modern semiconductor and microelectronics industries. Gallium oxide (Ga2O3) crystal is a novel ultra-wide bandgap semiconductor material. Compared to common third-generation semiconductors, it boasts advantages such as a wider bandgap, smaller lattice mismatch with GaN, transparent conductivity, the ability to be grown via melt processing, and lower cost, making it a research hotspot in semiconductor materials and devices in recent years. Ga2O3 exists in five crystal phases, including α, β, and γ, with β-Ga2O3 being the most stable. Its theoretical breakdown electric field strength is high, giving it significant potential applications in solar-blind detectors and high-power electronic devices. β-Ga₂O₃ crystals have the following advantages: 1) They exhibit a large Stokes shift in luminescence, with emitted photon energy far from the absorption edge and weak self-absorption; 2) The theoretical light yield limit is 40800 MeV⁻¹, with no significant thermal quenching, and can maintain a high light yield at room temperature; 3) Fast light emission components with wavelengths less than 10 ns can be obtained at room temperature; 4) The crystals are not easily deliquescent. However, at the same time, defects are uncontrollable during the preparation of β-Ga₂O₃ crystals, and a large number of crystallization defects are easily generated due to unreasonable temperature gradient control. In order to eliminate crystallization defects generated by single crystal growth during crystal growth, the ratio of crystal growth rate to axial temperature gradient at the solid-liquid interface, V / G, must be controlled within a certain range.

[0003] The following are some commonly used methods for preparing β-Ga₂O₃ crystals:

[0004] The guided mold method, also known as edge-defined thin film feeding crystal growth technology, involves placing a specially designed mold into the melt. The cross-section of the top of the mold has the same shape as the cross-section of the crystal to be grown. It can be used to grow crystals of specific shapes such as sheet-like, tubular, fibrous, and arc-shaped crystals.

[0005] The crucible lowering method, proposed by Yunnan Lanjing Technology Co., Ltd. in China, is similar to the vertical Bridgman process. It employs a molybdenum crucible and induction heating, with a seed crystal placed at the bottom. After all the raw material has melted, the seed crystal is well fused with the melt. Then, a temperature gradient is created by moving the crucible from a high-temperature zone to a low-temperature zone, causing the solid-liquid interface to move upwards, completing crystal growth. Adding a melt stirring device can improve crystal uniformity. The main advantage of this method is good crystal integrity. However, since the crucible diameter is the same as the resulting crystal diameter, the process is more complex when producing large-diameter crystals.

[0006] The Czochralski method involves heating and melting the raw materials for crystal formation in a crucible, attaching a seed crystal to the surface of the melt, and then, under controlled conditions, allowing atoms or molecules to rearrange at the interface between the seed crystal and the melt. As the temperature decreases, the crystal gradually solidifies, growing into a single crystal. Its main advantages are: easy observation of crystal growth during the process; the crystal grows on the melt surface without contacting the crucible, significantly reducing stress and preventing parasitic nucleation on the crucible wall; convenient use of oriented seed crystals and "necking" techniques, resulting in a significantly lower dislocation density; and the crystal exhibits low dislocation density and high optical homogeneity. Disadvantages include higher cost and limitations on crystal diameter.

[0007] One of the key technologies summarized above is the design and fabrication of the heating system for the crystal growth furnace. However, in the process of implementing the inventive solutions in the embodiments of this application, the inventors of this application discovered that the above-mentioned technologies have at least the following technical problems: Currently, the heating elements of the heating systems of crystal growth furnaces at home and abroad are induction heating type graphite heating elements, resistance heating type rod or mesh graphite heating elements, and resistance heating tungsten wire or tungsten plate heating elements. These heating elements do not distinguish between cold and hot ends, and their characteristics of power supply are low voltage, high current, large power variation range, long power supply time, high power consumption, and fluctuating maximum load. In addition, when growing β-Ga2O3 crystals using the above-mentioned traditional methods, the temperature at the interface between the β-Ga2O3 crystal and the melt is indirectly controlled by controlling the power input, ignoring the relationship between the resistance of the heating element and the temperature. The crystal growth process and the speed of crystal growth cannot be automatically and precisely controlled. Relying solely on adjusting the power input cannot respond to and provide timely feedback on the temperature changes at the interface between the β-Ga2O3 crystal and the melt, resulting in the inability to achieve rapid and high-quality growth of β-Ga2O3 crystals. Therefore, there is an urgent need for a device for precisely heating and preparing β-Ga2O3 crystals to solve the above problems. Summary of the Invention

[0008] The purpose of this invention is to provide an apparatus for precisely heating and preparing β-Ga2O3 crystals, thereby solving the problems mentioned in the background art.

[0009] To achieve the above objectives, the present invention provides the following technical solution:

[0010] An apparatus for precisely heating and preparing β-Ga2O3 crystals includes a sintering furnace body, a crucible, and β-Ga2O3 crystals. The crucible is disposed within the sintering furnace body and contains molten Ga2O3. The apparatus is characterized by further comprising:

[0011] Crystal growth mold, connected to the crucible;

[0012] The first insulating and heat-resistant layer is connected to the crucible;

[0013] The second insulating and heat-insulating layer is connected to the crucible;

[0014] An electromagnetic heating system is located on the outside of the crucible;

[0015] The radio frequency induction heating system is located outside the crucible and at the top of the electromagnetic heating system;

[0016] A slit, located inside the crystal growth mold;

[0017] The temperature sensing mechanism is connected to the electromagnetic heating system at one end and the radio frequency induction heating system at the other end, and is used for precise temperature sensing and control.

[0018] As a further aspect of the present invention: the temperature sensing mechanism includes:

[0019] The temperature sensor for the radio frequency induction heating system is located within the radio frequency induction heating system;

[0020] An electromagnetic heating temperature sensor is installed within the electromagnetic heating system.

[0021] As a further aspect of the present invention, the temperature sensor of the radio frequency induction heating system and the electromagnetic heating temperature sensor have the same structure.

[0022] As a further aspect of the present invention: the temperature sensor of the radio frequency induction heating system includes: a probe and a transducer, wherein the probe and the transducer are electrically connected, and the probe includes:

[0023] Top cover;

[0024] Screws are rotatably connected to the top cover.

[0025] The housing is connected to a screw thread.

[0026] The outer heat-insulating layer is connected to the shell.

[0027] A double-hole ceramic tube is installed inside the outer insulation layer and connected to it;

[0028] The compensating wire passes through and connects to the double-hole ceramic tube, with one end electrically connected to the converter;

[0029] The tungsten-rhenium coupler wire is connected to the other end of the compensating conductor.

[0030] The adhesive is connected at one end to the double-hole ceramic tube and at the other end to the heat insulation outer layer.

[0031] Compared with the prior art, the beneficial effects of the present invention are:

[0032] This invention heats the crucible using an electromagnetic heating system and a radio frequency induction heating system, causing the Ga2O3 melt to melt and the β-Ga2O3 crystal to grow on the crystal growth mold. The temperature sensing mechanism precisely senses and controls the heating temperature, ensuring rapid and high-quality growth of the β-Ga2O3 crystal. Attached Figure Description

[0033] Figure 1 This is a schematic diagram of a device for precisely heating and preparing β-Ga2O3 crystals according to an embodiment of the present invention.

[0034] Figure 2 This is a schematic diagram illustrating the working principle of the temperature sensor in the radio frequency induction heating system according to an embodiment of the present invention.

[0035] Figure 3 This is a schematic diagram of the probe structure in an embodiment of the present invention.

[0036] Figure 4 This is a schematic diagram illustrating the working principle of an apparatus for precisely heating and preparing β-Ga2O3 crystals according to an embodiment of the present invention.

[0037] In the figure: 1. β-Ga2O3 crystal; 2. Crystal growth mold; 3. Ga2O3 melt; 4. First insulating heat insulation layer; 5. Second insulating heat insulation layer; 6. Electromagnetic heating system; 7. Radio frequency induction heating system; 8. Crucible; 9. Slit; 10. Radio frequency induction heating system temperature sensor; 11. Electromagnetic heating temperature sensor; 12. Probe; 13. Transducer; 14. Top cover; 15. Screw; 16. Housing; 17. Heat insulation outer layer; 18. Double-hole ceramic tube; 19. Compensating wire; 20. Adhesive; 21. Tungsten-rhenium coupler wire; 22. Sintering furnace body. Detailed Implementation

[0038] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0039] In the embodiments of this invention, please refer to Figures 1 to 4 An apparatus for precisely heating and preparing β-Ga2O3 crystals includes a sintering furnace body 22, a crucible 8, and β-Ga2O3 crystals 1. The crucible 8 is disposed in the sintering furnace body 22, and contains molten Ga2O3 3 inside the crucible 8. The apparatus also includes:

[0040] Crystal growth mold 2 is connected to crucible 8;

[0041] The first insulating and heat-insulating layer 4 is connected to the crucible 8;

[0042] The second insulating and heat-insulating layer 5 is connected to the crucible 8;

[0043] The electromagnetic heating system 6 is located on the outside of the crucible 8;

[0044] The radio frequency induction heating system 7 is located outside the crucible 8 and on top of the electromagnetic heating system 6;

[0045] Slit 9 is located inside crystal growth mold 2;

[0046] The temperature sensing mechanism is connected at one end to the electromagnetic heating system 6 and at the other end to the radio frequency induction heating system 7, and is used for precise temperature sensing and control.

[0047] The electromagnetic heating system 6 and the radio frequency induction heating system 7 heat the crucible 8, causing the Ga2O3 melt 3 to melt and the β-Ga2O3 crystal 1 to grow on the crystal growth mold 2. The temperature sensing mechanism precisely senses and controls the heating temperature.

[0048] As one embodiment of the present invention, please refer to Figure 1 The temperature sensing mechanism includes:

[0049] The temperature sensor 10 of the radio frequency induction heating system is located inside the radio frequency induction heating system 7;

[0050] An electromagnetic heating temperature sensor 11 is installed within the electromagnetic heating system 6.

[0051] The radio frequency induction heating system temperature sensor 10 accurately senses and controls the heating temperature of the radio frequency induction heating system 7, and the electromagnetic heating temperature sensor 11 accurately senses and controls the heating temperature of the electromagnetic heating system 6.

[0052] As one embodiment of the present invention, the radio frequency induction heating system temperature sensor 10 and the electromagnetic heating temperature sensor 11 have the same structure.

[0053] As one embodiment of the present invention, please refer to Figures 1 to 4 The radio frequency induction heating system temperature sensor 10 includes: a probe 12 and a transducer 13, the probe 12 and the transducer 13 being electrically connected, and the probe 12 including:

[0054] Top cover 14;

[0055] Screw 15 is rotatably connected to the upper cover 14;

[0056] Housing 16 is threadedly connected to screw 15;

[0057] The heat-insulating outer layer 17 is connected to the housing 16;

[0058] A double-hole ceramic tube 18 is disposed inside the heat insulation outer layer 17 and connected thereto;

[0059] The compensating wire 19 passes through and is connected to the double-hole ceramic tube 18, with one end electrically connected to the converter 13.

[0060] The tungsten-rhenium coupler wire 21 is connected to the other end of the compensating wire 19;

[0061] Adhesive 20 is connected at one end to the double-hole ceramic tube 18 and at the other end to the heat insulation outer layer 17.

[0062] The tungsten-rhenium coupler 21 senses the heating temperature and transmits the signal to the converter 13 through the compensation wire 19. The converter 13 processes the signal and outputs it to the temperature controller, which then precisely controls the heating temperature of the radio frequency induction heating system 7 and the electromagnetic heating system 6.

[0063] The working principle of this invention is as follows: the electromagnetic heating system 6 and the radio frequency induction heating system 7 heat the crucible 8, causing the Ga2O3 melt 3 to melt. The β-Ga2O3 crystal 1 grows on the crystal growth mold 2. The tungsten-rhenium filament 21 senses the heating temperature and transmits the signal to the converter 13 through the compensation wire 19. The converter 13 processes the signal and outputs it to the temperature controller. The temperature controller precisely controls the heating temperature of the radio frequency induction heating system 7 and the electromagnetic heating system 6 to ensure the rapid and high-quality growth of the β-Ga2O3 crystal.

[0064] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0065] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. An apparatus for precisely heating and preparing β-Ga2O3 crystals, comprising a sintering furnace body, a crucible, and β-Ga2O3 crystals, wherein the crucible is disposed within the sintering furnace body and contains molten Ga2O3, characterized in that, Also includes: Crystal growth mold, connected to the crucible; The first insulating and heat-resistant layer is connected to the crucible; The second insulating and heat-insulating layer is connected to the crucible; An electromagnetic heating system is located on the outside of the crucible; The radio frequency induction heating system is located outside the crucible and at the top of the electromagnetic heating system; A slit, located inside the crystal growth mold; The temperature sensing mechanism is connected to the electromagnetic heating system at one end and the radio frequency induction heating system at the other end, and is used for precise temperature sensing and control. The temperature sensing mechanism includes a radio frequency induction heating system temperature sensor and an electromagnetic heating temperature sensor. The radio frequency induction heating system temperature sensor is located within the radio frequency induction heating system, and the electromagnetic heating temperature sensor is located within the electromagnetic heating system. The temperature sensor of the radio frequency induction heating system and the temperature sensor of the electromagnetic heating system have the same structure. The temperature sensor of the radio frequency induction heating system includes a probe and a transducer, which are electrically connected. The probe includes a top cover, a screw, a housing, a heat-insulating outer layer, a double-hole ceramic tube, a compensating wire, a tungsten-rhenium coupler wire, and adhesive. The screw is rotatably connected to the top cover, the housing is threadedly connected to the screw, the heat-insulating outer layer is connected to the housing, the double-hole ceramic tube is disposed inside the heat-insulating outer layer and connected to it, the compensating wire passes through the double-hole ceramic tube and is connected to it, one end of which is electrically connected to the transducer, the other end of which is connected to the tungsten-rhenium coupler wire, and one end of which is connected to the double-hole ceramic tube and the other end of which is connected to the heat-insulating outer layer.

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