Coated glass and its preparation method and application

Abstract

The present application relates to a coated glass and its preparation method and application. The preparation method of the coated glass includes preparing an anti-reflection and anti-reflection film layer on the surface of a glass substrate by radio frequency power coating; preparing a high-transmittance anti-fingerprint film layer on the surface of the anti-reflection and anti-reflection film layer; wherein the step of preparing the anti-reflection and anti-reflection film layer on the surface of the glass substrate by radio frequency power coating includes: simultaneously turning on the anode ion source and the cathode ion source to bombard the glass substrate. By simultaneously turning on the cathode ion source and the anode ion source to bombard the surface of the glass substrate, the prepared anti-reflection and anti-reflection film layer has good surface adhesion, and the prepared coated glass has better wear resistance while taking into account high transmittance.

Description

Technical Field

[0001] The present application relates to the technical field of glass products, and in particular to a coated glass and a preparation method and application thereof. Background Art

[0002] Anti-reflection (AR) film is a film structure that reduces reflection and enhances transmission. When used in display screens, it can reduce reflection and enhance transmission, making the display effect clearer. High-transmittance anti-fingerprint (AF) film has a high water drop angle, making the surface easy to clean, and has anti-fingerprint, oil-proof and dust-proof effects. It is used on touch screens of various smart electronic products, can maintain the cleanliness of the display surface, and has high transmittance and wear resistance.

[0003] The traditional display glass preparation process sequentially prepares an anti-reflection and anti-reflection film layer and a high-transmittance anti-fingerprint film on the surface of a glass substrate to obtain a display glass with high transmittance and anti-fouling performance. However, due to the poor surface adhesion of the anti-reflection and anti-reflection film layer, the bonding force between the anti-reflection and anti-reflection film layer and the high-transmittance anti-fingerprint film is poor, resulting in poor wear resistance of the glass film layer, which affects its application in display devices. Summary of the invention

[0004] Based on this, it is necessary to provide a coated glass and a preparation method and application thereof, wherein the film layer of the coated glass has both high transmittance and good wear resistance.

[0005] In one aspect of the present application, a method for preparing coated glass is provided, comprising the following steps:

[0006] A radio frequency power coating is applied on the surface of a glass substrate to prepare an anti-reflection and anti-reflection film layer;

[0007] Preparing a high-transmittance anti-fingerprint film layer on the surface of the anti-reflection and anti-reflection film layer;

[0008] The step of preparing an anti-reflection and anti-reflection film layer by radio frequency power coating on the surface of the glass substrate comprises: simultaneously turning on an anode ion source and a cathode ion source to bombard the glass substrate.

[0009] In some embodiments, the frequency of the radio frequency power source is 10 MHz to 20 MHz, and the power of the radio frequency power source is 3 kW to 10 kW.

[0010] In some embodiments, the step of preparing the anti-reflection and anti-reflection film layer by radio frequency power coating is performed in a mixed atmosphere of argon and oxygen.

[0011] In some embodiments, the flow rate of the argon gas is 100 SCCM to 200 SCCM; the flow rate of the oxygen gas is 80 SCCM to 200 SCCM.

[0012] In some embodiments, the anti-reflection and anti-reflection film layer includes a first refractive layer and a second refractive layer alternately stacked;

[0013] Optionally, the material of the first refractive layer includes at least one of Nb2O5, TiO2 and Si3N4;

[0014] Optionally, the material of the second refractive layer includes SiO2.

[0015] In some embodiments, the anti-reflection and anti-reflection film layer includes a first Nb2O5 layer, a first SiO2 layer, a second Nb2O5 layer and a second SiO2 layer which are stacked; wherein the thickness of the first Nb2O5 layer is 8nm to 12nm; the thickness of the first SiO2 layer is 28nm to 38nm; the thickness of the second Nb2O5 layer is 100nm to 120nm; the thickness of the second SiO2 layer is 80nm to 90nm.

[0016] In some embodiments, the anti-reflection and anti-reflection film layer includes a first TiO2 layer, a first SiO2 layer, a second TiO2 layer and a second SiO2 layer which are stacked; wherein the thickness of the first TiO2 layer is 11nm to 15nm; the thickness of the first SiO2 layer is 28nm to 38nm; the thickness of the second TiO2 layer is 110nm to 120nm; the thickness of the second SiO2 layer is 80nm to 90nm.

[0017] In some embodiments, the anti-reflection and anti-reflection film layer includes a first Si3N4 layer, a first SiO2 layer, a second Si3N4 layer and a second SiO2 layer which are stacked; wherein the thickness of the first Si3N4 layer is 20nm to 30nm; the thickness of the first SiO2 layer is 20nm to 40nm; the thickness of the second Si3N4 layer is 40nm to 60nm; the thickness of the second SiO2 layer is 80nm to 100nm.

[0018] In some embodiments, the high-transmittance anti-fingerprint film layer is prepared by evaporation coating.

[0019] In some implementation methods, the evaporation voltage of the evaporated coating is 1900mV to 2100mV; and the evaporation time of the evaporated coating is 600s to 1000s.

[0020] In a second aspect, the present application further provides a coated glass, wherein the coated glass is prepared by the method for preparing the coated glass according to the first aspect.

[0021] In a third aspect, the present application also provides the use of the coated glass according to the second aspect in the preparation of electronic products.

[0022] In a fourth aspect, the present application further provides an electronic product, comprising a main body and a glass cover plate embedded in the main body, wherein the glass cover plate is the coated glass of the second aspect.

[0023] The method for preparing the coated glass comprises: preparing an anti-reflection and anti-reflection film layer on the surface of a glass substrate by radio frequency power coating, preparing a high-transmittance anti-fingerprint film layer on the surface of the anti-reflection and anti-reflection film layer, and bombarding the surface of the glass substrate by simultaneously turning on the cathode ion source and the anode ion source. The prepared anti-reflection and anti-reflection film layer has good surface adhesion, and the prepared coated glass has better wear resistance while taking into account a higher transmittance. DETAILED DESCRIPTION

[0024] For ease of understanding of the application, the application will be described more fully below. The application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the application more thorough and comprehensive.

[0025] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art to which the present application belongs. The terms used herein in the specification of the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0026] In the present application, the selection range involving "and / or", "or / and", and "and / or" includes any one of two or more related listed items, and also includes any and all combinations of related listed items, and the said any and all combinations include any two related listed items, any more related listed items, or a combination of all related listed items. It should be noted that when at least three items are connected by at least two conjunctions selected from "and / or", "or / and", and "and / or", it should be understood that the technical solution undoubtedly includes technical solutions that are all connected by "logical and", and undoubtedly includes technical solutions that are all connected by "logical or". For example, "A and / or B" includes three parallel solutions of A, B and A+B. For example, the technical solution of "A, and / or, B, and / or, C, and / or, D" includes any one of A, B, C, and D (that is, the technical solution that is all connected by "logical OR"), and also includes any and all combinations of A, B, C, and D, that is, the combination of any two or any three of A, B, C, and D, and also includes the combination of four of A, B, C, and D (that is, the technical solution that is all connected by "logical AND").

[0027] In the present application, "plurality", "multiple", "multiple times", "plurality", etc., unless otherwise specified, refer to a number greater than 2 or equal to 2. For example, "one or more" means one or greater than or equal to two.

[0028] In the present application, references to “combinations thereof”, “any combination thereof”, “any combination thereof”, etc. include all suitable combinations of any two or more of the listed items.

[0029] In this application, the “suitable” mentioned in “suitable combination”, “suitable method”, “any suitable method”, etc. shall be based on the ability to implement the technical solution of this application, solve the technical problems of this application, and achieve the expected technical effects of this application.

[0030] In the present application, the terms “preferred”, “better”, “more preferred” and “suitable” are only used to describe implementation methods or examples with better effects, and it should be understood that they do not constitute limitations on the scope of protection of the present application.

[0031] In the present application, the terms “further”, “furthermore”, “particularly”, etc. are used for descriptive purposes to indicate differences in content, but should not be construed as limiting the scope of protection of the present application.

[0032] In this application, "optionally", "optional" and "optional" refer to optional, that is, to any one of the two parallel schemes of "yes" or "no". If multiple "options" appear in a technical solution, unless otherwise specified and there is no contradiction or mutual restriction, each "optional" is independent.

[0033] In this application, in the "first aspect", "second aspect", "third aspect", "fourth aspect", etc., the terms "first", "second", "third", "fourth", etc. are used only for descriptive purposes and cannot be understood as indicating or implying relative importance or quantity, nor can they be understood as implicitly indicating the importance or quantity of the indicated technical features. Moreover, "first", "second", "third", "fourth", etc. only serve the purpose of non-exhaustive enumeration and description, and it should be understood that they do not constitute a closed limitation on quantity.

[0034] In the present application, the technical features described in an open manner include closed technical solutions composed of the listed features, and also include open technical solutions containing the listed features.

[0035] In the present application, when it comes to numerical intervals (i.e., numerical ranges), unless otherwise specified, the optional numerical distribution is considered continuous within the above numerical interval, and includes the two numerical endpoints (i.e., the minimum and maximum values) of the numerical range, and each numerical value between the two numerical endpoints. Unless otherwise specified, when the numerical interval only refers to the integers within the numerical interval, it includes the two endpoint integers of the numerical range, and each integer between the two endpoints. In this article, it is equivalent to directly listing each integer, such as t is an integer selected from 1 to 10, indicating that t is any integer selected from the group of integers consisting of 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10. In addition, when multiple ranges are provided to describe features or characteristics, these ranges can be combined. In other words, unless otherwise specified, the ranges disclosed herein should be understood to include any and all subranges included therein.

[0036] The temperature parameters in this application, unless otherwise specified, are allowed to be either constant temperature treatment or to vary within a certain temperature range. It should be understood that the constant temperature treatment allows the temperature to fluctuate within the accuracy range controlled by the instrument. Fluctuations within the range of ±5°C, ±4°C, ±3°C, ±2°C, and ±1°C are allowed.

[0037] In the present application, the percentage content, unless otherwise specified, refers to mass percentage for solid-liquid mixing and solid-solid mixing, and volume percentage for liquid-liquid mixing.

[0038] In this application, when it comes to percentage concentration, unless otherwise specified, it refers to the final concentration. The final concentration refers to the proportion of the added component in the system after the addition of the component.

[0039] In the present application, % (w / w) and wt% both represent weight percentage, % (v / v) refers to volume percentage, and % (w / v) refers to mass volume percentage.

[0040] If there is no special explanation, all steps of the present application can be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), which means that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, the method may further include step (c), which means that step (c) may be added to the method in any order. For example, the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.

[0041] An embodiment of the present application provides a method for preparing coated glass, including the following steps S110 and S120.

[0042] Step S110: preparing an anti-reflection and anti-reflection (AR) film layer on the surface of the glass substrate by radio frequency power coating.

[0043] Step S110 includes: simultaneously turning on the anode ion source and the cathode ion source to bombard the glass substrate. The cathode ion source is a device that ionizes argon gas and emits cathode electrons. The anode ion source is a device that ionizes argon gas and emits anode Ar + By simultaneously turning on the anode ion source and the cathode ion source to bombard the glass substrate, the electrons can oscillate back and forth between the cathode and the anode, and have more opportunities to collide and ionize with gas molecules. The film layer prepared by RF power coating has good adhesion, which can improve the bonding between the AR film layer and the high-transmittance anti-fingerprint (AF) film layer and enhance the wear resistance of the coated glass.

[0044] Step S120: preparing a high-transmittance anti-fingerprint (AF) film layer on the surface of the anti-reflection and anti-reflection film layer.

[0045] The method for preparing the coated glass uses radio frequency power to coat the surface of a glass substrate to prepare an AR film layer, and prepares an AF film layer on the surface of the AR film layer. By simultaneously turning on the cathode ion source and the anode ion source to bombard the surface of the glass substrate, the prepared AR film layer has good surface adhesion. The prepared coated glass has better wear resistance while taking into account higher transmittance.

[0046] In some embodiments, the frequency of the RF power source is 10 MHz to 20 MHz. The power of the RF power source is 3 kW to 10 kW. Optionally, the frequency of the RF power source is 10 MHz, 12 MHz, 14 MHz, 15 MHz, 16 MHz, 18 MHz, 20 MHz or any range thereof. The power of the RF power source is 3 kW, 4 kW, 5 kW, 6 kW, 7 kW, 8 kW, 9 kW, 10 kW or any range thereof.

[0047] In some embodiments, step S110 is performed in a mixed atmosphere of argon and oxygen.

[0048] In some embodiments, the flow rate of argon is 100 SCCM to 200 SCCM. The flow rate of oxygen is 80 SCCM to 200 SCCM. Optionally, the flow rate of argon is 100 SCCM, 120 SCCM, 140 SCCM, 150 SCCM, 160 SCCM, 180 SCCM, 200 SCCM or any range thereof. The flow rate of oxygen is 80 SCCM, 100 SCCM, 120 SCCM, 140 SCCM, 150 SCCM, 160 SCCM, 180 SCCM, 200 SCCM or any range thereof.

[0049] In some embodiments, the anti-reflection and anti-reflection film layer includes a first refractive layer and a second refractive layer alternately stacked. The refractive index of the material of the first refractive layer is different from that of the material of the second refractive layer. By alternately stacking refractive layers with different refractive indices, the anti-reflection and anti-reflection film layer has a lower reflectivity and a higher transmittance, and a better display effect.

[0050] In some embodiments, the material of the first refractive layer includes at least one of Nb2O5, TiO2 and Si3N4.

[0051] In some embodiments, the material of the second refractive layer includes SiO2.

[0052] In some embodiments, the anti-reflection and anti-reflection film layer includes a first Nb2O5 layer, a first SiO2 layer, a second Nb2O5 layer and a second SiO2 layer which are stacked. The thickness of the first Nb2O5 layer is 8nm to 12nm; the thickness of the first SiO2 layer is 28nm to 38nm; the thickness of the second Nb2O5 layer is 100nm to 120nm; and the thickness of the second SiO2 layer is 80nm to 90nm.

[0053] In some embodiments, step S110 includes:

[0054] Step S111: A first Nb2O5 layer is formed on the surface of the glass substrate by radio frequency power coating. The thickness of the first Nb2O5 layer is 8 nm to 12 nm.

[0055] Step S112: Prepare a first SiO2 layer by radio frequency power coating on the surface of the first Nb2O5 layer. The thickness of the first SiO2 layer is 28nm-38nm.

[0056] Step S113: A second Nb2O5 layer is formed by radio frequency power coating on the surface of the first SiO2 layer. The thickness of the second Nb2O5 layer is 100 nm to 120 nm.

[0057] Step S114: A second SiO2 layer is prepared by radio frequency power coating on the surface of the second Nb2O5 layer. The thickness of the second SiO2 layer is 80nm to 90nm.

[0058] In some embodiments, in step S111 and step S113, the target material for coating is Nb. In step S112 and step S114, the target material for coating is Si. Through RF power coating, the target material forms an oxide film layer on the surface of the glass substrate.

[0059] In some of the embodiments, the coating time of the RF power supply is adjusted according to the thickness of the first Nb2O5 layer, the first SiO2 layer, the second Nb2O5 layer and the second SiO2 layer, so that film layers with different thicknesses can be obtained.

[0060] In some embodiments, the anti-reflection and anti-reflection film layer includes a first TiO2 layer, a first SiO2 layer, a second TiO2 layer and a second SiO2 layer stacked in layers, wherein the thickness of the first TiO2 layer is 11nm to 15nm; the thickness of the first SiO2 layer is 28nm to 38nm; the thickness of the second TiO2 layer is 110nm to 120nm; and the thickness of the second SiO2 layer is 80nm to 90nm.

[0061] In some embodiments, the anti-reflection and anti-reflection film layer includes a first Si3N4 layer, a first SiO2 layer, a second Si3N4 layer and a second SiO2 layer which are stacked. The thickness of the first Si3N4 layer is 20nm to 30nm; the thickness of the first SiO2 layer is 20nm to 40nm; the thickness of the second Si3N4 layer is 40nm to 60nm; and the thickness of the second SiO2 layer is 80nm to 100nm.

[0062] In some of the embodiments, in step S120, the high-transmittance anti-fingerprint film layer is prepared by evaporation coating.

[0063] In some embodiments, the evaporation voltage of the evaporation coating is 1900mV to 2100mV. The evaporation time of the evaporation coating is 600s to 1000s. Optionally, the evaporation voltage of the evaporation coating is 1900mV, 2000mV, 2100mV or any range thereof. The evaporation time of the evaporation coating is 600s, 700s, 800s, 900s, 1000s or any range thereof.

[0064] In some embodiments, the evaporation current of the evaporation coating is 100A to 200A. Optionally, the evaporation current of the evaporation coating is 100A, 110A, 120A, 130A, 140A, 150A, 160A, 170A, 180A, 190A, 200A or any range thereof.

[0065] In some embodiments, the thickness of the high-transmittance anti-fingerprint film layer is 2nm to 20nm. When the thickness of the high-transmittance anti-fingerprint film layer is within the above range, it has better light transmittance and anti-fingerprint effect; if the thickness is too thin, the anti-fingerprint effect is poor; if the thickness is too large, it will affect the light transmittance and the haze will be larger.

[0066] In some of the embodiments, the material of the high-transmittance anti-fingerprint film layer can be selected from anti-fingerprint materials known in the art. The anti-fingerprint material is evaporated into a gaseous state during the evaporation coating process, and then forms a high-transmittance anti-fingerprint film layer on the surface of the coating substrate. As an example, in the embodiment of the present application, the material of the high-transmittance anti-fingerprint film layer adopts the anti-fingerprint material provided by Dongguan Taiyue Company.

[0067] Another embodiment of the present application further provides a coated glass, which is prepared by using the above-mentioned method for preparing coated glass.

[0068] The coated glass is prepared by the above-mentioned preparation method, and the coated glass has both high transmittance and good anti-fingerprint and anti-fouling properties, and has good wear resistance.

[0069] Another embodiment of the present application further provides the use of the above-mentioned coated glass in the preparation of electronic products.

[0070] Another embodiment of the present application further provides an electronic product, comprising a main body and a glass cover plate embedded in the main body, wherein the glass cover plate is the above-mentioned coated glass.

[0071] The following are specific embodiments.

[0072] The embodiments described below are exemplary and are only used to explain the present application, and cannot be understood as limitations on the present application. If no specific technology or conditions are specified in the embodiments, the technology or conditions described in the literature in the field or the product instructions shall be followed. The reagents or instruments used without indicating the manufacturer are all conventional products that can be purchased commercially. In the following specific embodiments, the glass substrate adopts polished and tempered high-aluminum glass with a thickness of 1mm. The material of the high-transmittance anti-fingerprint film layer adopts the anti-fingerprint material provided by Dongguan Taiyue Company.

[0073] Embodiment 1:

[0074] The preparation of the coated glass of this embodiment includes:

[0075] (1) Turn on the radio frequency power supply (frequency 15 MHz, power 5 kW), and turn on the cathode ion source and the anode ion source at the same time to bombard the glass substrate to prepare the first Nb2O5 layer by coating. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the first Nb2O5 layer is 10 nm.

[0076] (2) Turn on the radio frequency power supply (frequency 15 MHz, power 5 kW), and turn on the cathode ion source and the anode ion source at the same time to bombard, and coat the surface of the first Nb2O5 layer to prepare the first SiO2 layer. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the first SiO2 layer is 30 nm.

[0077] (3) Turn on the radio frequency power supply (frequency 15 MHz, power 5 kW), and turn on the cathode ion source and the anode ion source at the same time to bombard, and prepare the second Nb2O5 layer by coating on the surface of the first SiO2 layer. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the second Nb2O5 layer is 100 nm.

[0078] (4) Turn on the radio frequency power supply (frequency 15 MHz, power 5 kW), and turn on the cathode ion source and the anode ion source at the same time to bombard, and coat the second Nb2O5 layer to prepare a second SiO2 layer, thereby obtaining a glass substrate prepared with an AR film layer. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the second SiO2 layer is 90 nm.

[0079] (5) Using evaporation coating, an AF film layer is prepared on the surface of the AR film layer prepared in step (4), and the thickness of the AF film layer is 10 nm. The evaporation coating parameters are: evaporation voltage 2000 mV, evaporation time 800 s, and evaporation current 150 A. Example 2:

[0080] The difference between the coated glass of this embodiment and that of Embodiment 1 is that the thickness of the AR film layer is different.

[0081] The preparation of the coated glass of this embodiment includes:

[0082] (1) Turn on the radio frequency power supply (frequency 15 MHz, power 5 kW), and turn on the cathode ion source and the anode ion source at the same time to bombard the glass substrate to prepare the first Nb2O5 layer by coating. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the first Nb2O5 layer is 8 nm.

[0083] (2) Turn on the radio frequency power supply (frequency 15 MHz, power 5 kW), and turn on the cathode ion source and the anode ion source for bombardment, and prepare the first SiO2 layer by coating on the surface of the first Nb2O5 layer. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the first SiO2 layer is 28 nm.

[0084] (3) Turn on the radio frequency power supply (frequency 15 MHz, power 5 kW), and turn on the cathode ion source and the anode ion source for bombardment, and prepare a second Nb2O5 layer by coating on the surface of the first SiO2 layer. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the second Nb2O5 layer is 110 nm.

[0085] (4) Turn on the radio frequency power supply (frequency 15 MHz, power 5 kW), and turn on the cathode ion source and the anode ion source at the same time to bombard, and coat the second Nb2O5 layer to prepare a second SiO2 layer, thereby obtaining a glass substrate prepared with an AR film layer. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the second SiO2 layer is 80 nm.

[0086] (5) Using evaporation coating to prepare an AF film layer on the surface of the AR film layer prepared in step (4), the thickness of the AF film layer is 10 nm. The evaporation coating parameters are: evaporation voltage 2000 mV, evaporation time 800 s, evaporation current 150 A.

[0087] Embodiment 3:

[0088] The difference between the coated glass of this embodiment and that of Embodiment 1 is that the thickness of the AR film layer is different.

[0089] The preparation of the coated glass of this embodiment includes:

[0090] (1) Turn on the radio frequency power supply (frequency 15 MHz, power 5 kW), and turn on the cathode ion source and the anode ion source to bombard the glass substrate to prepare the first Nb2O5 layer by coating. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the first Nb2O5 layer is 12 nm.

[0091] (2) Turn on the radio frequency power supply (frequency 15 MHz, power 5 kW), and turn on the cathode ion source and the anode ion source at the same time to bombard, and coat the surface of the first Nb2O5 layer to prepare the first SiO2 layer. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the first SiO2 layer is 38 nm.

[0092] (3) Turn on the radio frequency power supply (frequency 15 MHz, power 5 kW), and turn on the cathode ion source and the anode ion source at the same time to bombard, and coat the surface of the first SiO2 layer to prepare a second Nb2O5 layer. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the second Nb2O5 layer is 120 nm.

[0093] (4) Turn on the radio frequency power supply (frequency 15 MHz, power 5 kW), and turn on the cathode ion source and the anode ion source at the same time to bombard, and coat the second Nb2O5 layer to prepare a second SiO2 layer, thereby obtaining a glass substrate prepared with an AR film layer. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the second SiO2 layer is 85 nm.

[0094] (5) Using evaporation coating to prepare an AF film layer on the surface of the AR film layer prepared in step (4), the thickness of the AF film layer is 10 nm. The evaporation coating parameters are: evaporation voltage 2000 mV, evaporation time 800 s, evaporation current 150 A.

[0095] Embodiment 4:

[0096] The difference between the coated glass of this embodiment and that of Embodiment 1 is that the coating parameters of the AR film layer are different.

[0097] The preparation of the coated glass of this embodiment includes:

[0098] (1) Turn on the radio frequency power supply (frequency 10 MHz, power 10 kW), and turn on the cathode ion source and the anode ion source to bombard the glass substrate to prepare the first Nb2O5 layer by coating. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the first Nb2O5 layer is 10 nm.

[0099] (2) Turn on the radio frequency power supply (frequency 10 MHz, power 10 kW), and turn on the cathode ion source and the anode ion source at the same time to bombard, and coat the surface of the first Nb2O5 layer to prepare the first SiO2 layer. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the first SiO2 layer is 30 nm.

[0100] (3) Turn on the radio frequency power supply (frequency 10 MHz, power 10 kW), and turn on the cathode ion source and the anode ion source for bombardment, and prepare the second Nb2O5 layer by coating on the surface of the first SiO2 layer. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the second Nb2O5 layer is 100 nm.

[0101] (4) Turn on the radio frequency power supply (frequency 10 MHz, power 10 kW), and turn on the cathode ion source and the anode ion source at the same time to bombard, and coat the second Nb2O5 layer to prepare a second SiO2 layer, thereby obtaining a glass substrate prepared with an AR film layer. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the second SiO2 layer is 90 nm.

[0102] (5) Using evaporation coating to prepare an AF film layer on the surface of the AR film layer prepared in step (4), the thickness of the AF film layer is 10 nm. The evaporation coating parameters are: evaporation voltage 2000 mV, evaporation time 800 s, evaporation current 150 A.

[0103] Embodiment 5:

[0104] The difference between the coated glass of this embodiment and that of Embodiment 1 is that the coating parameters of the AF film layer are different.

[0105] The preparation of the coated glass of this embodiment includes:

[0106] (1) Turn on the radio frequency power supply (frequency 15 MHz, power 5 kW), and turn on the cathode ion source and the anode ion source at the same time to bombard the glass substrate to prepare the first Nb2O5 layer by coating. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the first Nb2O5 layer is 10 nm.

[0107] (2) Turn on the radio frequency power supply (frequency 15 MHz, power 5 kW), and turn on the cathode ion source and the anode ion source at the same time to bombard, and coat the surface of the first Nb2O5 layer to prepare the first SiO2 layer. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the first SiO2 layer is 30 nm.

[0108] (3) Turn on the radio frequency power supply (frequency 15 MHz, power 5 kW), and turn on the cathode ion source and the anode ion source at the same time to bombard, and prepare the second Nb2O5 layer by coating on the surface of the first SiO2 layer. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the second Nb2O5 layer is 100 nm.

[0109] (4) Turn on the radio frequency power supply (frequency 15 MHz, power 5 kW), and turn on the cathode ion source and the anode ion source at the same time to bombard, and coat the second Nb2O5 layer to prepare a second SiO2 layer, thereby obtaining a glass substrate prepared with an AR film layer. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM. The thickness of the second SiO2 layer is 90 nm.

[0110] (5) An AF film layer is prepared on the surface of the AR film layer prepared in step (4) by evaporation coating, and the thickness of the AF film layer is 10 nm. The evaporation coating parameters are: evaporation voltage 1900 mV, evaporation time 1000 s, and evaporation current 150 A.

[0111] Comparative Example 1:

[0112] The difference between Comparative Example 1 and Example 1 is that in steps (1) to (4), the AR film layer is prepared by coating with a medium frequency power supply (frequency 40 KHz, power 10 kW), and the cathode ion source and the anode ion source are not turned on for bombardment. The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM.

[0113] Comparative Example 2:

[0114] The difference between Comparative Example 2 and Example 2 is that the AR film layer in steps (1) to (4) is prepared by coating with a medium frequency power supply (frequency 40 KHz, power 10 kW). The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM.

[0115] Comparative Example 3:

[0116] The difference between Comparative Example 3 and Example 3 is that the AR film layer in steps (1) to (4) is prepared by coating with a medium frequency power supply (frequency 40 KHz, power 10 kW). The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM.

[0117] Comparative Example 4:

[0118] The difference between Comparative Example 4 and Example 4 is that the AR film layer in steps (1) to (4) is prepared by coating with a medium frequency power supply (frequency 40 KHz, power 10 kW). The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM.

[0119] Comparative Example 5:

[0120] The difference between Comparative Example 5 and Example 5 is that the AR film layer in steps (1) to (4) is prepared by coating with a medium frequency power supply (frequency 40 KHz, power 10 kW). The coating parameters are: Ar flow rate 150 SCCM, O2 flow rate 100 SCCM.

[0121] Test part:

[0122] The coated glass prepared in the comparative example was rubbed with 1kg pressure steel wool for 3000 times, and the water drop angle of the coated glass before and after rubbing was tested. The coated glass prepared in the example was rubbed with 1kg pressure steel wool for 20000 times, and the water drop angle of the coated glass before and after rubbing was tested. The water drop angle was measured by a water drop angle tester. The test results are recorded in Table 1.

[0123] Table 1

[0124] Serial number Water drop angle before friction (°) Water drop angle after friction (°) Example 1 117 114 Example 2 114 111 Example 3 115 116 Example 4 112 113 Example 5 116 108 Comparative Example 1 115 66 Comparative Example 2 114 71 Comparative Example 3 113 90 Comparative Example 4 114 85 Comparative Example 5 114 63

[0125] It can be seen from the relevant data in Table 1 that the coated glass of Comparative Examples 1 to 5 adopts medium frequency power supply coating to prepare AR film layer. After 3000 times of friction, the water drop angle of the prepared coated glass decreases from 113° to 115° to 63° to 90°, the anti-fingerprint and anti-fouling performance of the coated glass surface deteriorates, and the wear resistance of the coated glass is poor. After 20,000 times of friction, the change of the water drop angle of the coated glass prepared in Examples 1 to 5 is small, the wear resistance of the coating on the surface of the coated glass is good, and the film layer is not easily damaged by friction.

[0126] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0127] The above-described embodiments only express several implementation methods of the present application, which is convenient for understanding the technical solution of the present application in detail, but it cannot be understood as limiting the scope of protection of the invention patent. It should be pointed out that for ordinary technicians in this field, without departing from the concept of the present application, several modifications and improvements can be made, which all belong to the scope of protection of the present application. It should be understood that the technical solutions obtained by those skilled in the art through logical analysis, reasoning or limited experiments on the basis of the technical solutions provided in the present application are all within the scope of protection of the attached claims described in the present application. Therefore, the scope of protection of the patent of this application shall be based on the content of the attached claims, and the description can be used to interpret the content of the claims.

Claims

1. A method for preparing coated glass, characterized in that: The following steps are involved: A radio frequency power coating is applied on the surface of a glass substrate to prepare an anti-reflection and anti-reflection film layer; Preparing a high-transmittance anti-fingerprint film layer on the surface of the anti-reflection and anti-reflection film layer; The anti-reflection and anti-reflection film layer comprises a first refractive layer and a second refractive layer alternately stacked; The material of the first refractive layer includes at least one of Nb2O5, TiO2 and Si3N4; The material of the second refractive layer includes SiO2; Among them, the step of preparing an anti-reflection and anti-reflection film layer by radio frequency power coating on the surface of the glass substrate includes: simultaneously turning on the anode ion source and the cathode ion source to bombard the glass substrate, the frequency of the radio frequency power supply is 10MHz~20MHz, and the power of the radio frequency power supply is 3kW~10kW.

2. The method for preparing coated glass according to claim 1, characterized in that: The step of preparing the anti-reflection and anti-reflection film layer by radio frequency power coating is carried out in a mixed atmosphere of argon and oxygen.

3. The method for preparing coated glass according to claim 2, characterized in that: The flow rate of the argon gas is 100 SCCM to 200 SCCM; the flow rate of the oxygen gas is 80 SCCM to 200 SCCM.

4. The method for preparing coated glass according to claim 1, characterized in that: The anti-reflection and anti-reflection film layer satisfies one of the conditions (1) to (3): (1) The anti-reflection and anti-reflection film layer comprises a first Nb2O5 layer, a first SiO2 layer, a second Nb2O5 layer and a second SiO2 layer which are stacked; wherein the thickness of the first Nb2O5 layer is 8nm to 12nm; the thickness of the first SiO2 layer is 28nm to 38nm; the thickness of the second Nb2O5 layer is 100nm to 120nm; the thickness of the second SiO2 layer is 80nm to 90nm; (2) The anti-reflection and anti-reflection film layer comprises a first TiO2 layer, a first SiO2 layer, a second TiO2 layer and a second SiO2 layer which are stacked; wherein the thickness of the first TiO2 layer is 11nm to 15nm; the thickness of the first SiO2 layer is 28nm to 38nm; the thickness of the second TiO2 layer is 110nm to 120nm; and the thickness of the second SiO2 layer is 80nm to 90nm; (3) The anti-reflection and anti-reflection film layer includes a first Si3N4 layer, a first SiO2 layer, a second Si3N4 layer and a second SiO2 layer which are stacked; wherein the thickness of the first Si3N4 layer is 20nm to 30nm; the thickness of the first SiO2 layer is 20nm to 40nm; the thickness of the second Si3N4 layer is 40nm to 60nm; the thickness of the second SiO2 layer is 80nm to 100nm.

5. The method for preparing coated glass according to claim 1, characterized in that: The high-transmittance anti-fingerprint film layer is prepared by evaporation coating.

6. The method for preparing coated glass according to claim 5, characterized in that: The evaporation voltage of the evaporation coating is 1900mV to 2100mV; the evaporation time of the evaporation coating is 600s to 1000s.

7. A coated glass, characterized in that: The coated glass is prepared by the method for preparing coated glass according to any one of claims 1 to 6.

8. Use of the coated glass according to claim 7 in the preparation of electronic products.

9. An electronic product, characterized in that: It comprises a main body and a glass cover plate embedded in the main body, and the glass cover plate is the coated glass according to claim 7.