A sputtering deposition component, a deposition chamber, and a vacuum deposition device

Abstract

This application relates to a sputtering deposition component, a deposition chamber, and a vacuum deposition device. The sputtering deposition component includes: a shielding cover; a sputtering cathode located within the shielding cover, the sputtering cathode including a target and a magnet group; and an electrode plate group located within the shielding cover, the electrode plate group including two electrode plates on both sides of the plasma of the sputtering deposition component and an AC power source, the electrode plates being electrically connected to the AC power source. Ions and electrons of the plasma oscillate in the AC electric field generated by the electrode plates, and the electrode plates can absorb electrons moving to the surface of the electrode plates. Compared with the prior art, the vacuum deposition device of the present invention can achieve low-temperature and high-efficiency preparation of the surface coating of the composite current collector, which is of great significance for the large-area promotion of the composite current collector.

Description

Technical Field

[0001] The present application relates to the technical field of lithium batteries, and in particular, to a sputtering deposition component, a deposition chamber, and a vacuum deposition device. Background Art

[0002] In recent years, with the large demand for the utilization of renewable energy and the increasing concern about environmental pollution problems, there is an urgent need to develop efficient and convenient large-scale energy storage technologies. Lithium-ion batteries rely on the movement of lithium ions between the positive electrode and the negative electrode to work and achieve charge and discharge. They have the advantages of high energy density, large output power, high charging efficiency, and environmental friendliness, and thus have been widely used. Lithium-ion batteries are mainly composed of a positive electrode, a separator, and a negative electrode material stacked together. Among them, the positive / negative current collector, as an important part of the battery, plays the role of carrying the active material and collecting and conducting the electrons generated by the electrochemical reaction to the external circuit, thereby realizing the process of converting chemical energy into electrical energy, which has an important impact on the durability of lithium-ion batteries. Therefore, higher requirements are put forward for the conductivity, stability, and low-cost preparation of the current collector.

[0003] According to different materials, the current collectors that can be used for lithium-ion batteries mainly include aluminum current collectors, copper current collectors, nickel current collectors, stainless steel current collectors, and carbon current collectors. Considering the requirements of conductivity, strength, quality, flexibility, and cost of the current collector, the most commonly used positive current collector is rolled aluminum foil, and the negative current collector is electrolytic copper foil. However, there are still many problems in the actual application of the current collector: (1) The phenomenon of battery combustion occurs frequently, the problem of lithium battery thermal runaway is prominent, and the battery safety performance needs to be further improved; (2) Using traditional metal copper foil and aluminum foil as current collectors, it is very difficult to further improve the battery energy density, and there is an extremely high technical threshold for preparing ultra-thin metal current collectors; (3) The material processing time of the current collector is long, and there are pollutant emissions in the process of electrolytic copper foil, which is not conducive to environmental protection requirements. At present, researchers have developed polymer composite aluminum films and composite copper films, and the quality of the current collector can be reduced to 1 / 2 and 3 / 4 of the original respectively, which is of great significance for improving the energy density of lithium batteries and reducing costs. At the same time, the metal thin film on the polymer has better extensibility, which can relieve the volume deformation during charge and discharge, thereby improving the stability and safety performance of the battery.

[0004] The preparation process for the composite current collector mainly includes two steps: The first step is to prepare a metal layer with a thickness of dozens of nanometers on the surface of a polymer substrate with a thickness of several micrometers by vacuum sputtering to metallize the thin film; the second step is to thicken the metal layer to the micrometer level by aqueous medium electroplating to replace the traditional metal current collector. However, the traditional vacuum sputtering deposition method has low deposition efficiency, and electroplating causes serious environmental pollution. At the same time, when using multiple process routes for composite deposition, not only the coating deposition equipment is more complex, but also the preparation cost increases. Summary of the Invention

[0005] The present application provides a sputtering deposition component, a deposition chamber, and a vacuum deposition device, which eliminate the electroplating process, are environmentally friendly, reduce costs, and achieve the preparation of a coating with low damage to the substrate surface.

[0006] In the first aspect of the embodiment of the present application, a sputtering deposition component is provided, and the sputtering deposition component includes:

[0007] A shielding cover;

[0008] A sputtering cathode, which is located inside the shielding cover. The sputtering cathode includes a target and a magnet group, and the sputtering cathode is used to form a plasma;

[0009] An electrode plate group, which is located inside the shielding cover. The electrode plate group includes two electrode plates located on both sides of the plasma and an alternating current power supply. The electrode plates are electrically connected to the alternating current power supply. Ions and electrons of the plasma oscillate in the alternating current electric field generated by the electrode plates, and the electrode plates can absorb electrons moving to the surface of the electrode plates.

[0010] In a possible design, the target is cylindrical, and at least two groups of the magnet groups are arranged inside the target;

[0011] The magnet groups are centrosymmetric with respect to the center of the target, and the magnet groups generate a non-equilibrium magnetic field.

[0012] In a possible design, the magnet group includes a mounting seat, a first magnet, a second magnet, and a third magnet that are arranged side by side on the mounting seat. The third magnet is located between the first magnet and the second magnet;

[0013] The polarity of the upper surface of the first magnet, the polarity of the upper surface of the second magnet, and the polarity of the upper surface of the third magnet are opposite.

[0014] In a possible design, the upper surfaces of the first magnet and the second magnet are N poles, and the upper surface of the third magnet is an S pole.

[0015] In a possible design, the shapes and sizes of the first magnet and the second magnet are the same and are symmetric with respect to the third magnet.

[0016] In a possible design, four groups of the magnet groups are evenly spaced and arranged inside the target, and two relatively arranged magnet groups are centrosymmetric with respect to the center of the target.

[0017] In a possible design, the shape of the surface of the electrode plate is one or a combination of a plane, a curved surface, a concave-convex surface, and a corrugated surface.

[0018] In a possible design, the waveform of the AC power supply is one of a square wave, a sine wave, a sawtooth wave, and a triangular wave.

[0019] In a possible design, the oscillation radius of the electrons of the plasma is r, the oscillation radius of the ions is R, the distance between the electrode plates in the electrode plate group is L, and the number of the target materials is n, satisfying r > L and R < L / 4n.

[0020] In a possible design, the sputtering deposition assembly further includes a gas transmission device, and the gas transmission device is arranged on both sides of the non-sputtering area of the target material.

[0021] In a possible design, the outlet direction of the gas transmission device is the same as the sputtering deposition direction of the target material.

[0022] In a possible design, two or more of the sputtering cathodes are arranged in the shielding cover, and the sputtering cathodes are arranged side by side and located between the two electrode plates of the electrode plate group.

[0023] In a possible design, the target material has N sputtering areas and N non-sputtering areas, the sputtering deposition assembly includes N plasmas, and the plasmas correspond to the sputtering areas;

[0024] The sputtering deposition assembly includes N electrode plate groups and 2N gas transmission devices.

[0025] In a possible design, an opening is provided in the shielding cover at a position corresponding to the plasma.

[0026] A second aspect of the embodiments of the present application provides a deposition chamber, and the deposition chamber includes:

[0027] A housing, and the housing has an inner cavity;

[0028] A sputtering deposition assembly, the sputtering deposition assembly is located in the inner cavity and is the sputtering deposition assembly described above;

[0029] A transmission system, and the transmission system is used to move the coil.

[0030] In a possible design, the deposition chamber at least includes a first sputtering deposition assembly and a second sputtering deposition assembly which are oppositely arranged, and the transmission system is further used to move the coil between the first sputtering deposition assembly and the second sputtering deposition assembly, so that the first sputtering deposition assembly and the second sputtering deposition assembly coat both sides of the coil in the thickness direction.

[0031] In a possible design, the transmission system includes a plurality of guide rollers, cooling rollers, and a tensioning device.

[0032] In a possible design, a plurality of the sputtering deposition assemblies are arranged in the deposition chamber, and the plurality of sputtering deposition assemblies are horizontally installed or vertically installed.

[0033] A third aspect of the embodiments of the present application provides a vacuum deposition device, which includes:

[0034] A unwinding chamber, which is provided with an unwinding shaft for unwinding a coil to be coated;

[0035] A deposition chamber, which is the deposition chamber described above;

[0036] A winding chamber, which is provided with a winding shaft for winding the coated coil;

[0037] Wherein, the deposition chamber is located downstream of the unwinding chamber and is used for depositing a coating on the coil to be coated.

[0038] In a possible design, the vacuum deposition device further includes an ion cleaning chamber located between the unwinding chamber and the deposition chamber, and a plasma cleaning device for cleaning the surface of the coil to be coated is arranged in the ion cleaning chamber.

[0039] In a possible design, the vacuum deposition device further includes a coating detection chamber located downstream of the deposition chamber, and the coating detection chamber includes one or more of a chromaticity detection device, a thickness detection device, and a defect detection device.

[0040] In a possible design, a baking and degassing device is arranged in the unwinding chamber.

[0041] In the embodiments of the present application, the sputtering deposition assembly of the vacuum deposition device separates ions and electrons in the plasma by introducing a set of electrode plates on both sides of the plasma, and most of the electrons are absorbed by the electrode plates, reducing the temperature rise effect of the coil caused by electron bombardment, thereby realizing low-temperature and low-damage deposition of the coating on the surface of the coil. At the same time, the vacuum deposition device reduces the electroplating link in the traditional process, is very friendly to the environment, and has a simple deposition device and low cost.

[0042] It should be understood that the above general description and the following detailed description are only exemplary and do not limit the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 It is a schematic structural diagram of the vacuum deposition device provided by the present invention in a specific embodiment;

[0044] Figure 2 For Figure 1Schematic diagram of the structure of the deposition chamber in a specific embodiment;

[0045] Figure 3 is Figure 2 Schematic diagram of the magnetic field line distribution on the surface of the target by the magnet assembly in [the device];

[0046] Figure 4 is Figure 3 Schematic diagram of the positions of the sputtering area and the non-sputtering area of the sputtering cathode in [the device];

[0047] Figure 5 is Figure 3 and Figure 4 Schematic diagram of the arrangement of the magnet group in [the device];

[0048] Figure 6 Schematic diagram of the magnetic field line distribution on the surface of the target by the magnet assembly in another embodiment;

[0049] Figure 7 Schematic diagram of the principle of separating electrons and ions by the oscillation filtering device;

[0050] Figure 8 is Figure 2 Schematic diagram of the structure of the electrode plate in [the device];

[0051] Figure 9 is Figure 1 Schematic diagram of the structure of the deposition chamber in another specific embodiment;

[0052] Figure 10 is Figure 1 Schematic diagram of the structure of the deposition chamber in yet another specific embodiment;

[0053] Figure 11 Schematic diagram of the structure of the vacuum deposition equipment provided by the present invention in another specific embodiment.

[0054] Reference numerals:

[0055] 1 - Unwinding chamber, 2 - Ion cleaning chamber, 3 - Deposition chamber, 31 - Outer shell, 4 - Coating detection chamber, 5 - Rewinding chamber, 6 - Coil, 7 - Electron, 8 - Ion, 101 - Unwinding roller, 102 - Baking and degassing device, 201 - Plasma cleaning device, 301 - Guide roller, 302 - Cooling roller, 303 - Sputtering deposition assembly, 3031 - First sputtering deposition assembly, 3032 - Second sputtering deposition assembly, 304 - Sputtering cathode, 305 - Electrode plate group, 3051 - Electrode plate, 306 - Gas transmission device, 307 - Shielding cover, 308 - AC power supply, 309 - Plasma, 310 - Target, 311 - Mounting seat, 312 - Magnet group, 3121 - First magnet, 3122 - Second magnet, 3123 - Third magnet, 401 - Optical detection system, 501 - Rewinding roller.

[0056] The accompanying drawings herein are incorporated into and constitute a part of this specification, showing embodiments consistent with the present application, and are used together with the specification to explain the principles of the present application. Detailed implementation manners

[0057] To better understand the technical solutions of the present application, the embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0058] It should be clear that the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without making creative efforts belong to the scope protected by the present application.

[0059] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "the" and "said" used in the embodiments of the present application and the appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise.

[0060] It should be understood that the term "and / or" used herein is only an association relationship describing associated objects, indicating that three relationships may exist. For example, A and / or B may represent: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " herein generally represents an "or" relationship between the associated objects before and after.

[0061] It should be noted that the orientation terms such as "upper", "lower", "left" and "right" described in the embodiments of the present application are described from the angles shown in the accompanying drawings, and should not be construed as limiting the embodiments of the present application. In addition, in the context, it should also be understood that when it is mentioned that an element is connected "above" or "below" another element, it can not only be directly connected "above" or "below" another element, but also be indirectly connected "above" or "below" another element through an intermediate element.

[0062] Embodiments of the present application provide a sputtering deposition assembly, a deposition chamber including the sputtering deposition assembly, and a vacuum deposition apparatus including the deposition chamber. The vacuum deposition apparatus uses the principle of vacuum sputtering for coating. Sputtering coating refers to a technique in a vacuum chamber where energetic particles bombard the surface of a target material, causing the bombarded particles to deposit on the coil to be coated. In fact, it uses the sputtering phenomenon to achieve the purpose of producing various thin films. Bombarding the surface of a material with energetic particles having dozens of electron volts or higher kinetic energy causes its atoms to obtain sufficiently high energy to sputter into the gas phase. This sputtering and complex particle scattering process is called sputtering. It can be used for etching, composition analysis, coating, etc. The material being bombarded is called the target material. Since ions are easy to accelerate or deflect in electromagnetic fields, the energetic particles are generally ions.

[0063] The vacuum deposition apparatus can be used to form a composite current collector. Specifically, a metal coating is deposited on the coil through the vacuum deposition apparatus to form a composite current collector. The vacuum deposition apparatus can also be used in other fields that require sputtering deposition of coatings. Embodiments of the present application are described by taking the vacuum deposition apparatus for a composite current collector as an example.

[0064] As Figure 1 shown, the vacuum deposition apparatus includes an unwinding chamber 1, an ion cleaning chamber 2, a deposition chamber 3, a coating detection chamber 4, and a winding chamber 5 connected in series in sequence. Each of the chambers is equipped with an independent vacuum pump group system for independent control, and the chambers are connected in series with each other through a transmission system of the coil 6.

[0065] An unwinding roller 101 is provided in the unwinding chamber 1. The unwinding roller 101 is connected to a servo motor to complete the release of the coil 6 to be coated. A baking and degassing device 102 is arranged around the unwinding roller 101 to remove the residual gas attached to the surface of the coil 6 and improve the cleanliness of the coating deposition.

[0066] At least one group of plasma cleaning devices 201 is arranged in the ion cleaning chamber 2 along the transmission direction of the coil 6. It can not only remove impurities and defects on the surface of the coil, but also activate the coating surface of the coil 6 to improve the bonding performance between the coil 6 and the coating. The plasma cleaning device 201 is one of conventional ion cleaning devices such as ion source cleaning, ion beam cleaning, radio frequency cleaning, and electron gun cleaning.

[0067] The coating detection chamber 4 is located downstream of the deposition chamber 3, and several groups of optical detection systems 401 are provided in the coating detection chamber 4, arranged on both sides of the transmission direction of the coil 6. The optical detection system includes one or several of a chromaticity detection device, a thickness detection device, and a defect detection device, and is used to detect the coating of the coated coil 6 to determine whether it meets the requirements.

[0068] A winding roller 501 is arranged in the winding chamber 5 to wind the coated coil 6.

[0069] As Figure 1 shown, the deposition chamber 3 includes a housing 31 and a sputtering deposition assembly 303 and a coil transmission system located inside the housing 31. The coil transmission system is used to drive the coil 6 to be coated to move and includes a plurality of guide rollers 301, cooling rollers 302 and a tensioning device. The sputtering deposition assemblies 303 are arranged side by side along the traveling direction of the coil 6. As Figure 1 shown in the embodiment, the coil 6 to be coated is separated into several deposition regions by the guide rollers 301 or the cooling rollers 302, and 1 to 5 sputtering deposition assemblies 303 are arranged adjacent to each other in each deposition region to realize continuous deposition of the surface coating of the coil 6.

[0070] In addition, as Figure 1 and Figure 11 shown, the deposition chamber 3 at least includes a first sputtering deposition assembly 3031 and a second sputtering deposition assembly 3032 which are oppositely arranged. The transmission system is also used to make the coil 6 pass between the first sputtering deposition assembly 3031 and the second sputtering deposition assembly 3032, so that both sides of the coil 6 in the thickness direction respectively have the first sputtering deposition assembly 3031 and the second sputtering deposition assembly 3032. The two sputtering deposition assemblies can simultaneously coat the two side surfaces of the coil 6 in the thickness direction, so that double-sided coating of the coil 6 can be realized, and the coil 6 can realize double-sided coating only by passing between the first sputtering deposition assembly 3031 and the second sputtering deposition assembly 3032 once, improving the coating efficiency.

[0071] As Figure 2 shown, the sputtering deposition assembly 303 includes a shielding cover 307 and a sputtering cathode 304, a gas transmission device 306 and an electrode plate group 305 located inside the shielding cover 307. The sputtering cathode 304 includes a target 310. The shielding cover 307 has an opening, and the sputtering cathode 304 can generate plasma 309. The gas transmission device 306 is used to introduce gas, such as argon. The argon forms argon ions under the action of the sputtering cathode 304, and the argon ions obtain energy and bombard the target 310, so that atoms are ejected from the target 310, and the ejected atoms migrate to the surface of the coil 6 to be coated through the opening of the shielding cover 307 to complete the coating.

[0072] The direction of the gas outlet holes in the gas transmission device 306 is consistent with the sputtering deposition direction of the target 310, which can not only make most of the gas ionization occur in the sputtering area of the target 310, reduce the coating coverage deposition on the surface of the gas transmission device 306, but also can push the atoms and ions of the target 310 to deposit on the surface of the coil 6 at high speed through the air flow.

[0073] As Figure 3 andFigure 4 As shown, the sputtering cathode 304 includes a target 310 and a magnet group 312. The electrode plate group 305 includes two electrode plates 3051 located on both sides of the plasma 309. The electrode plates 3051 are electrically connected to an AC power supply 308. Ions and electrons in the plasma 309 oscillate reciprocally under the action of the alternating electric field in the electrode plates 3051. The ions move in the direction towards the target 310 and bombard the target 310, and the electrons move to the surface of the electrode plates 3051 under the action of the alternating electric field and are neutralized and absorbed.

[0074] In this embodiment, the sputtering deposition assembly 303 of the vacuum deposition device separates ions and electrons in the plasma 309 by introducing the electrode plate group 305 on both sides of the plasma 309 and applying an alternating electric field. Most of the electrons are absorbed by the electrode plates 3051, reducing the temperature rise effect of the coil 6 caused by electron bombardment, thereby realizing low-temperature and low-damage deposition of the coating on the surface of the coil 6. At the same time, the vacuum deposition device reduces the electroplating link in the traditional process, is very friendly to the environment, and has a simple deposition device and low cost.

[0075] Specifically, as Figure 3 and Figure 4 shown, the target 310 is cylindrical, and at least two groups of magnet groups 312 are arranged inside the target 310. The magnet groups 312 are centrosymmetric with respect to the center of the target 310, and the magnet groups 312 generate a non-equilibrium magnetic field. As Figure 4 shown, the magnetic field lines of the non-equilibrium magnetic field can extend to the front of the target 310. Electrons move along the magnetic field lines and collide with argon gas, which can significantly improve the ionization rate.

[0076] As Figure 3 and Figure 4 shown in the embodiment, two groups of magnet groups 312 are arranged inside the target 310, and the structural parameters of the two groups of magnet groups 312 are exactly the same and are centrosymmetric with respect to the center of the cylindrical target 310, and the target 310 is separated into several groups of sputtering regions and several groups of non-sputtering regions as Figure 4 shown, so that all the target 310 particles are deposited on the surface of the coil 6, improving the deposition rate of the coating and the effective utilization rate of the target 310 material. Among them, the sputtering regions and the non-sputtering regions are both centrosymmetric with respect to the center of the target 310.

[0077] More specifically, as Figure 3 and Figure 4As shown, the magnet group 312 includes a mounting base 311, and a first magnet 3121, a second magnet 3122, and a third magnet 3123 that are mounted side by side on the mounting base 311. The third magnet 3123 is located between the first magnet 3121 and the second magnet 3122. The polarity of the upper surface of the first magnet 3121, the polarity of the upper surface of the second magnet 3122, and the polarity of the upper surface of the third magnet 3123 are opposite.

[0078] In a specific embodiment, the upper surfaces of the first magnet 3121 and the second magnet 3122 are N poles, and the upper surface of the third magnet 3123 is an S pole. The magnitude of the magnetic field on the surface of the target 310 can be adjusted by adjusting the dimensions, shapes, positions, and remanence magnitudes of the first magnet 3121, the second magnet 3122, and the third magnet 3123.

[0079] Among them, the first magnet 3121, the second magnet 3122, and the third magnet 3123 can specifically be electromagnetic coils. The magnitude of the magnetic field on the surface of the target 310 can be adjusted by adjusting the number of turns of the electromagnetic coils and the magnitude of the current.

[0080] As Figure 5 shown is a schematic diagram of several magnet groups 312 with different structures. The protected content of the present invention is not limited to the structures shown in the figure. Figure 5 In (a), it shows that the first magnet 3121, the second magnet 3122, and the third magnet 3123 have the same shape and size; in (b), it shows that the height of the third magnet 3123 is different from that of the first magnet 3121 and the second magnet 3122. Specifically, the height of the third magnet 3123 is less than the height of the first magnet 3121 and the second magnet 3122; in (c), it shows that the width of the third magnet 3123 is different from that of the first magnet 3121 and the second magnet 3122. Specifically, the width of the third magnet 3123 is less than the width of the first magnet 3121 and the second magnet 3122; in (d), it shows that there are chamfers at the tops of the first magnet 3121 and the second magnet 3122; in (e), it shows that both the first magnet 3121 and the second magnet 3122 are inclined; in (f), it shows that the first magnet 3121, the second magnet 3122, and the third magnet 3123 are all electromagnetic coils.

[0081] As Figure 6 In the embodiment shown, four groups of magnet groups 312 are evenly spaced inside the target 310, and the polarities of the two side magnets in the four groups of magnet groups 312 are the same and opposite to the polarity of the central magnet. This setting can effectively focus the coating sputtering area directly in front of the magnet assembly, and at the same time achieve coating sputtering deposition of the target 310 in 4 directions, thereby realizing high-speed deposition of the coating on the surface of the substrate 6.

[0082] As Figure 7As shown, the electrode plate group 305 includes electrode plates 3051 oppositely arranged on both sides of the plasma 309 along the deposition direction of the target particles, and an equipped AC power supply 308. One AC power supply 308 can be connected to one or more pairs of electrode plates 3051. The ions 8 and electrons 7 of the plasma 309 oscillate reciprocally under the action of the AC electric field between the electrode plates 3051. After the electrons 7 oscillate between the electrode plates 3051, they move to the surface of the electrode plates 3051 and are neutralized, while the ions 8 oscillate periodically until they are deposited on the surface of the substrate 6, effectively realizing the separation of the electrons 7 and the ions 8 and avoiding the temperature rise caused by the electrons 7 bombarding the substrate 6.

[0083] The waveform generated by the AC power supply 308 is one of a square wave, a sine wave, a sawtooth wave, and a triangular wave, and preferably a sine wave.

[0084] As Figure 7 shown, the oscillation radius of the electrons 7 of the plasma 309 is r, and the oscillation radius of the ions 8 is R. The distance between the electrode plates 3051 in the electrode plate group 305 is L, and the number of the targets 310 is n, satisfying r > L and R < L / 4n. And in order to ensure the focusing of the plasma sputtering deposition, the distance L between the electrode plates 3051 is preferably less than 100 cm. The oscillation radii of the electrons 7 and the ions 8 are controlled by adjusting the frequency and the amplitude of the AC voltage of the AC power supply 308. r > L and R < L / 4n enable the electrons to be deposited on the electrode plates 3051 and absorbed, reducing the heat generation caused by the electrons bombarding the coil 6, and the ions can be smoothly deposited on the coil 6 for film growth.

[0085] In each of the above embodiments, as Figure 8 shown, the surface shape of the electrode plate 3051 is one or a combination of a plane, a curved surface, a concave-convex surface, and a corrugated surface. Preferably, it is a corrugated electrode plate 3051. The material of the electrode plate 3051 can be a stainless steel plate, a titanium plate, an aluminum plate, or other metal plates. Preferably, a coating of the same material as the sputtering cylindrical target is coated on the surface of the electrode plate 3051. During the reciprocal oscillation of the electrons 7 and the ions 8, the ionization rate of the particles in the plasma 309 will be significantly increased. Therefore, there will still be a small number of ions bombarding the electrode plate 3051 to produce a backsputtering phenomenon and pollute the coating. Therefore, using a corrugated electrode plate can better absorb the electrons 7, the ions 8, and the backsputtered atoms, improving the purity of the coating.

[0086] As Figure 9 and 10 shown is a schematic structural diagram of the sputtering deposition assembly 303 in other embodiments. In Figure 9 it, two Figure 3The sputtering cathode 304 shown, the sizes, shapes, and polarities of the magnet groups 312 in the two sputtering cathodes 304 are the same. Gas transfer devices 306 are arranged on both sides of each sputtering cathode 304. Combining the two sputtering cathodes 304 together can simultaneously complete the sputtering of the target 310 and the deposition of the coating. In Figure 10 the sputtering deposition assembly 303, a sputtering cathode 304 as shown in Figure 6 is provided in the center. Four groups of plate groups 305 and gas transfer devices 306 are evenly arranged around the sputtering cathode 304. At this time, the shielding cover 307 has four openings, which can simultaneously achieve the simultaneous deposition of coatings in multiple directions around the sputtering cathode 304, further improving the coating deposition rate, and making the sputtering deposition assembly 303 contribute to the realization of double-sided coating of the coil 6.

[0087] In addition, the layout of the sputtering deposition assembly 303 is set to be installed in a horizontal manner or a vertical manner. Figure 1 The schematic diagram of the equipment arranged in a vertical manner is shown in Figure 11 The schematic diagram of the equipment arranged in a horizontal manner is shown. By installing targets 310 made of different materials on the sputtering cathode 304, the preparation of multi-layer composite coatings can also be realized.

[0088] The vacuum deposition equipment in the present invention can realize the low-temperature and high-efficiency preparation of the surface coating of the composite current collector. In the sputtering deposition assembly 303, the design of the sputtering cathode 304 can improve the deposition rate of the coating. At the same time, the electrode plate group 305 can effectively separate electrons and ions, reduce the bombardment effect of electrons on the substrate, and realize the preparation of a coating with low damage to the substrate surface, which is of great significance for the large-scale promotion of the composite current collector.

[0089] The above are only the preferred embodiments of the present application and are not used to limit the present application. For those skilled in the art, various changes and modifications can be made to the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A sputtering deposition component, characterized in that, The sputtering deposition assembly includes: A shielding cover; A sputtering cathode located inside the shielding cover, the sputtering cathode including a target and a magnet group, the sputtering cathode being used to form a plasma; An electrode plate group located inside the shielding cover, the electrode plate group including two electrode plates located on both sides of the plasma and an AC power source, the electrode plates being electrically connected to the AC power source, ions and electrons of the plasma oscillating in the AC electric field generated by the electrode plates, and the electrode plates being capable of absorbing electrons moving to the surface of the electrode plates; The target is cylindrical, and at least two sets of the magnet groups are arranged inside the target, the magnet groups being centrosymmetric with respect to the center of the target, and the magnet groups generating a non-equilibrium magnetic field; The oscillation radius of the electrons of the plasma is r, the oscillation radius of the ions is R, the distance between the electrode plates in the electrode plate group is L, and the number of the targets is n, satisfying r > L and R < L / 4n.

2. The sputtering deposition assembly according to claim 1, wherein The magnet group includes a mounting seat and a first magnet, a second magnet, and a third magnet arranged side by side on the mounting seat, the third magnet being located between the first magnet and the second magnet; The polarity of the upper surface of the first magnet, the polarity of the upper surface of the second magnet, and the polarity of the upper surface of the third magnet are opposite.

3. The sputtering deposition assembly according to claim 2, wherein, The upper surfaces of the first magnet and the second magnet are N poles, and the upper surface of the third magnet is an S pole.

4. The sputtering deposition assembly according to claim 2, wherein The shapes and sizes of the first magnet and the second magnet are the same and are symmetric with respect to the third magnet.

5. The sputtering deposition assembly according to claim 1, characterized in that, Four sets of the magnet groups are uniformly and spacedly arranged inside the target, and two relatively arranged magnet groups are centrosymmetric with respect to the center of the target.

6. The sputtering deposition assembly according to any one of claims 1-5, characterized in that, The surface shape of the electrode plate is one or a combination of a plane, a curved surface, a concave-convex surface, and a corrugated surface.

7. The sputtering deposition assembly according to any one of claims 1-5, characterized in that, The waveform of the AC power source is one of a square wave, a sine wave, a sawtooth wave, and a triangular wave.

8. The sputtering deposition assembly according to any one of claims 1-5, characterized in that, The sputtering deposition assembly further includes a gas transmission device arranged on both sides of the non-sputtering area of the target.

9. The sputtering deposition assembly according to claim 8, wherein, The outlet direction of the gas transmission device is the same as the sputtering deposition direction of the target.

10. The sputtering deposition assembly according to any one of claims 1-5, characterized in that, Two or more sputtering cathodes are arranged inside the shielding cover, and the sputtering cathodes are arranged side by side and located between the two electrode plates of the electrode plate group.

11. The sputtering deposition assembly according to any one of claims 1-5, characterized in that, The target has N sputtering areas and N non-sputtering areas, the sputtering deposition assembly includes N plasmas, and the plasmas correspond to the sputtering areas; The sputtering deposition assembly includes N electrode plate groups and 2N gas transmission devices.

12. The sputtering deposition assembly according to any one of claims 1-5, characterized in that, The shielding cover is provided with an opening at a position corresponding to the plasma.

13. A deposition chamber, characterized in that, The deposition chamber includes: A housing having an inner cavity; A sputtering deposition assembly located in the inner cavity and being the sputtering deposition assembly according to any one of claims 1-12; A transmission system for moving a coil.

14. The deposition chamber according to claim 13, wherein, The deposition chamber at least includes a first sputtering deposition assembly and a second sputtering deposition assembly which are oppositely arranged, and the transmission system is further configured to enable the coil to pass between the first sputtering deposition assembly and the second sputtering deposition assembly, so that the first sputtering deposition assembly and the second sputtering deposition assembly coat both sides of the coil in the thickness direction.

15. The deposition chamber according to claim 13, wherein The transmission system includes a plurality of guide rollers, a cooling roller, and a tensioning device.

16. The deposition chamber according to claim 13, characterized in that, A plurality of the sputtering deposition assemblies are arranged in the deposition chamber, and the plurality of sputtering deposition assemblies are horizontally installed or vertically installed.

17. A vacuum deposition device, characterized in that, The vacuum deposition equipment includes: An unwinding chamber provided with an unwinding shaft for unwinding the coil to be coated; A deposition chamber which is the deposition chamber according to any one of claims 13-16; A winding chamber provided with a winding shaft for winding the coated coil; Wherein, the deposition chamber is located downstream of the unwinding chamber and is configured to deposit a coating on the coil to be coated.

18. The vacuum deposition apparatus according to claim 17, wherein, The vacuum deposition equipment further includes an ion cleaning chamber located between the unwinding chamber and the deposition chamber, and a plasma cleaning device for cleaning the surface of the coil to be coated is arranged in the ion cleaning chamber.

19. The vacuum deposition apparatus according to claim 17, characterized in that, The vacuum deposition equipment further includes a coating detection chamber located downstream of the deposition chamber, and the coating detection chamber includes one or more of a chromaticity detection device, a thickness detection device, and a defect detection device.

20. The vacuum deposition apparatus according to claim 17, characterized in that, A baking and degassing device is arranged in the unwinding chamber.

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