A radio frequency power amplifier and a substrate module

Abstract

The present invention provides a radio frequency power amplifier and a substrate module, including a substrate input unit, a power amplifier unit, and a substrate output unit; the substrate input unit receives a single-ended signal and generates two first signals therefrom; the power amplifier unit amplifies the power of the two first signals and suppresses the second-order harmonics of the main frequency to generate two second signals; the substrate output unit receives the two second signals, performs power combination to convert them into a third signal, and suppresses the harmonics of the third signal before outputting; the power amplifier unit includes a first input radio frequency matching network, a first driver stage power amplifier, a first inter-stage matching network, a first amplification stage power amplifier, a second input radio frequency matching network, a second driver stage power amplifier, a second inter-stage matching network, a second amplification stage power amplifier, a twelfth capacitor, a thirteenth capacitor, and a ninth capacitor. The technical solution of the present invention has a high operating bandwidth and good harmonic suppression effect when the output power is high.

Description

Technical Field

[0001] The present invention relates to the field of circuit technologies, and particularly to a radio frequency power amplifier and a substrate module. Background Art

[0002] Currently, in a satellite communication system, the radio frequency front end has a great impact on communication quality. Among them, the radio frequency power amplifier is a key device of the radio frequency front end.

[0003] The radio frequency power amplifier in the related art generally includes a driver amplifier, a first input matching network, a carrier power amplifier, a second input matching network, a peak power amplifier, a first output matching network, and a second output matching network.

[0004] However, the radio frequency power amplifier in the related art is used in a satellite communication system. Modern satellite communication is mainly applied to areas where ordinary mobile communication signals cannot cover (such as uninhabited areas, deserts, oceans, polar regions, etc.) or in cases where communication base stations are damaged (such as earthquakes, floods, typhoons, etc.). Due to the more severe and complex communication environment, and the communication distance between the terminal and the satellite being farther than that of a cellular mobile network, the accuracy and stability of the communication system are particularly crucial. When a handheld wireless terminal is working properly, it can directly perform two-way information transmission with the satellite and the ground monitoring station through satellite signals, and the communication mode uses short message forms as the basic transmission unit. Compared with cellular mobile communication, due to the farther distance, as a key device of the radio frequency front end, the radio frequency power amplifier needs to output a higher saturation power. When the radio frequency power amplifier operates at a high power output, it usually works in the non-linear region and generates a series of harmonic components. When the radio frequency power amplifier module operates at a high power output and a saturated output, it is difficult to simultaneously achieve a relatively wide operating bandwidth and a high harmonic suppression.

[0005] Therefore, it is necessary to provide a new radio frequency power amplifier and module to solve the above problems. Summary of the Invention

[0006] In view of the above deficiencies in the prior art, the present invention provides a radio frequency power amplifier and a substrate module with a high operating bandwidth and a good harmonic suppression effect when the output power is high.

[0007] To solve the above technical problems, in a first aspect, an embodiment of the present invention provides a radio frequency power amplifier, which includes a substrate input unit, a power amplifier unit, and a substrate output unit connected in sequence;

[0008] The substrate input unit is configured to receive an external single-ended signal and convert it into two first signals with the same power and a phase difference of 180°;

[0009] The power amplifier unit is used to amplify the power of the two first signals and suppress the second harmonic of the main frequency to generate two second signals;

[0010] The substrate output unit is used to receive the two second signals, perform power combination to convert them into a third signal, and suppress the harmonics of the third signal before outputting;

[0011] The power amplifier unit includes a first input RF matching network, a first driver stage power amplifier, a first inter-stage matching network, a first amplification stage power amplifier, a second input RF matching network, a second driver stage power amplifier, a second inter-stage matching network, a second amplification stage power amplifier, a twelfth capacitor, a thirteenth capacitor, and a ninth capacitor; the first input RF matching network includes a third capacitor and a third inductor; the first inter-stage matching network includes a seventh inductor, a fifth capacitor, a fifth inductor, and a seventh capacitor, and is used to suppress the second harmonic of the main frequency; the second input RF matching network includes a fourth capacitor and a fourth inductor; the second inter-stage matching network includes an eighth inductor, a sixth capacitor, a sixth inductor, and an eighth capacitor, and is used to suppress the second harmonic of the main frequency;

[0012] The first end of the third capacitor serves as the first input end of the power amplifier unit, and the first end of the third capacitor is connected to the first end of the third inductor, and the second end of the third inductor is grounded;

[0013] The second end of the third capacitor is connected to the input end of the first driver stage power amplifier;

[0014] The output end of the first driver stage power amplifier is respectively connected to the second end of the seventh inductor, the first end of the fifth capacitor, and the first end of the seventh capacitor;

[0015] The first end of the seventh inductor is respectively connected to a first power supply voltage, the first end of the eighth inductor, the first end of the twelfth capacitor, and the first end of the thirteenth capacitor, the second end of the twelfth capacitor is grounded, and the second end of the thirteenth capacitor is grounded;

[0016] The second end of the fifth capacitor is connected to the first end of the fifth inductor, and the second end of the fifth inductor is grounded;

[0017] The second end of the seventh capacitor is connected to the input end of the first amplification stage power amplifier;

[0018] The output end of the first amplification stage power amplifier serves as the first output end of the power amplifier unit, and the output end of the first amplification stage power amplifier is connected to the first end of the ninth capacitor;

[0019] The first end of the fourth capacitor serves as the second input terminal of the power amplifier unit, and the first end of the fourth capacitor is connected to the first end of the fourth inductor, and the second end of the fourth inductor is grounded;

[0020] The second end of the fourth capacitor is connected to the input terminal of the second-stage driver power amplifier;

[0021] The output terminal of the second-stage driver power amplifier is respectively connected to the second end of the eighth inductor, the first end of the sixth capacitor, and the first end of the eighth capacitor;

[0022] The second end of the sixth capacitor is connected to the first end of the sixth inductor, and the second end of the sixth inductor is grounded;

[0023] The second end of the eighth capacitor is connected to the input terminal of the second-stage amplifier power amplifier;

[0024] The output terminal of the second-stage amplifier power amplifier serves as the second output terminal of the power amplifier unit, and the output terminal of the second-stage amplifier power amplifier is connected to the second end of the ninth capacitor.

[0025] Preferably, the substrate input unit is an LC integrated balun.

[0026] Preferably, the substrate input unit includes a first capacitor, a second capacitor, a first inductor, and a second inductor;

[0027] The first end of the first capacitor serves as the input terminal of the substrate input unit, and the first end of the first capacitor is connected to the first end of the second inductor;

[0028] The second end of the first capacitor serves as the first output terminal of the substrate input unit, and the second end of the first capacitor is connected to the first end of the first inductor, and the second end of the first inductor is grounded;

[0029] The second end of the second inductor serves as the second output terminal of the substrate input unit, and the second end of the second inductor is connected to the first end of the second capacitor, and the second end of the second capacitor is grounded.

[0030] Preferably, the substrate output unit includes a transformer, a tenth capacitor, an eleventh capacitor, a fourteenth capacitor, a series resonance network, and an output matching circuit;

[0031] The series resonance network is used to suppress harmonics above the fourth order;

[0032] The output matching circuit is used to match the output impedance;

[0033] The first end of the primary coil of the transformer serves as the first input terminal of the substrate output unit; the second end of the primary coil of the transformer serves as the second input terminal of the substrate output unit;

[0034] The center tap of the primary coil of the transformer is connected to the first end of the tenth capacitor, the first end of the fourteenth capacitor, and the second power supply voltage. The second end of the tenth capacitor is grounded, and the second end of the fourteenth capacitor is grounded;

[0035] The first end of the secondary coil of the transformer is respectively connected to the interface end of the series resonance network and the input end of the output matching circuit;

[0036] The second end of the secondary coil of the transformer is connected to the first end of the eleventh capacitor, and the second end of the eleventh capacitor is grounded;

[0037] The output end of the output matching circuit serves as the output end of the substrate output unit.

[0038] Preferably, the series resonance network includes a fifteenth capacitor, a sixteenth capacitor, a ninth inductor, and a tenth inductor;

[0039] The first end of the fifteenth capacitor serves as the interface end of the series resonance network, and the first end of the fifteenth capacitor is connected to the first end of the sixteenth capacitor;

[0040] The second end of the fifteenth capacitor is connected to the first end of the ninth inductor, and the second end of the ninth inductor is grounded;

[0041] The second end of the sixteenth capacitor is connected to the first end of the tenth inductor, and the second end of the tenth inductor is grounded.

[0042] Preferably, the output matching circuit includes a first low-pass matching network, a second low-pass matching network, a third low-pass matching network, and a band-stop matching network connected in sequence.

[0043] Preferably, the first low-pass matching network includes an eleventh inductor, a seventeenth capacitor, and a twelfth inductor;

[0044] The second low-pass matching network includes a thirteenth inductor, an eighteenth capacitor, and a fourteenth inductor;

[0045] The third low-pass matching network includes a fifteenth inductor, a nineteenth capacitor, and a sixteenth inductor;

[0046] The band-stop matching network includes a twentieth capacitor and a seventeenth inductor;

[0047] The first end of the eleventh inductor serves as the input end of the output matching circuit;

[0048] The second end of the eleventh inductor is respectively connected to the first end of the seventeenth capacitor and the first end of the thirteenth inductor; the second end of the seventeenth capacitor is connected to the first end of the twelfth inductor, and the second end of the twelfth inductor is grounded;

[0049] The second end of the thirteenth inductor is respectively connected to the first end of the eighteenth capacitor and the first end of the fifteenth inductor; the second end of the eighteenth capacitor is connected to the first end of the fourteenth inductor, and the second end of the fourteenth inductor is grounded;

[0050] The second end of the fifteenth inductor is respectively connected to the first end of the nineteenth capacitor, the first end of the twentieth capacitor and the first end of the seventeenth inductor; the second end of the nineteenth capacitor is connected to the first end of the sixteenth inductor, and the second end of the sixteenth inductor is grounded;

[0051] The second end of the twentieth capacitor serves as the input end of the output matching circuit, and the second end of the twentieth capacitor is connected to the second end of the seventeenth inductor.

[0052] Preferably, the third capacitor, the fourth capacitor, the fifth capacitor, the sixth capacitor, the seventh capacitor, the eighth capacitor and the ninth capacitor are all STACK capacitors or MIM capacitors.

[0053] In a second aspect, an embodiment of the present invention further provides a substrate module, and the substrate module includes a substrate and a radio frequency power amplifier as provided in the above embodiment of the present invention welded to the substrate.

[0054] Preferably, the power amplifier unit is a semiconductor chip; both the substrate input unit and the substrate output unit are made of a plurality of discrete components.

[0055] Compared with the related art, the RF power amplifier and the substrate module of the present invention are provided with a first inter-stage matching network and a second inter-stage matching network in the power amplifier unit. Among them, the first inter-stage matching network includes a seventh inductor, a fifth capacitor, a fifth inductor, and a seventh capacitor; the second inter-stage matching network includes an eighth inductor, a sixth capacitor, a sixth inductor, and an eighth capacitor; the first inter-stage matching network and the second inter-stage matching network improve the frequency bandwidth of the matching network, thereby improving the operating bandwidth of the RF power amplifier, so that the operating frequency bandwidth of the RF power amplifier is high. More preferably, the RF power amplifier of the present invention is provided with a substrate input unit and a substrate output unit before and after the power amplifier unit respectively. The balun of the substrate input unit and the transformer of the substrate output unit form a differential power amplifier, and its differential structure itself can also achieve the function of enhancing the suppression of even harmonics. The series resonance network of the substrate output unit suppresses harmonics above the fourth order; the output matching circuit of the substrate output unit achieves the suppression of the second and third harmonics; at the same time, the power amplifier unit suppresses the second harmonic of the main frequency through the first inter-stage matching network and the second inter-stage matching network, so that the second harmonic component generated by the power amplifier unit is reduced; thus, the harmonic suppression effect of the RF power amplifier and the substrate module of the present invention is good when the output power is high. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] The present invention will be described in detail below with reference to the accompanying drawings. Through the detailed description in conjunction with the following drawings, the above or other aspects of the present invention will become clearer and easier to understand. In the drawings,

[0057] Figure 1 is a schematic circuit diagram of an RF power amplifier of the related art;

[0058] Figure 2 is a circuit diagram of the substrate input unit of the RF power amplifier of the present invention;

[0059] Figure 3 is a circuit diagram of the substrate output unit of the RF power amplifier of the present invention;

[0060] Figure 4 is a graph showing the relationship between the gain and frequency of the RF power amplifier provided by the embodiment of the present invention;

[0061] Figure 5 is a graph showing the relationship between the gain and output power of the RF power amplifier provided by the embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0062] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0063] The specific embodiments / Examples described herein are specific embodiments of the present invention and are used to illustrate the concept of the present invention. They are all explanatory and exemplary and should not be construed as limiting the embodiments of the present invention and the scope of the present invention. Except for the embodiments described herein, those skilled in the art can also adopt other obvious technical solutions based on the content disclosed in the claims and the specification of this application. These technical solutions include technical solutions that make any obvious substitutions and modifications to the embodiments described herein, and all are within the protection scope of the present invention.

[0064] (Example 1)

[0065] An embodiment of the present invention provides a radio frequency power amplifier 100.

[0066] Please refer to Figure 1 as shown, Figure 1 is a schematic circuit diagram of a radio frequency power amplifier 100 in the related art. Specifically, the radio frequency power amplifier 100 includes a substrate input unit 1, a power amplifier unit 2, and a substrate output unit 3 connected in sequence.

[0067] The circuit connection relationship of the radio frequency power amplifier 100 is:

[0068] The input end of the substrate input unit 1 serves as the input end RFin of the radio frequency power amplifier 100.

[0069] The first output end of the substrate input unit 1 is connected to the first input end of the power amplifier unit 2. The second output end of the substrate input unit 1 is connected to the second input end of the power amplifier unit 2.

[0070] The first output end of the power amplifier unit 2 is connected to the first input end of the substrate output unit 3.

[0071] The second output end of the power amplifier unit 2 is connected to the second input end of the substrate output unit 3.

[0072] The output end of the substrate output unit 3 serves as the output end RFout of the radio frequency power amplifier 100.

[0073] The substrate input unit 1 is used to receive an external single-ended signal and convert it into two first signals with the same power and a phase difference of 180°. The substrate input unit 1 is also used for 50-ohm matching of the input end RFin of the radio frequency power amplifier 100.

[0074] In this embodiment, the substrate input unit 1 is an LC lumped balun. The advantage of the LC lumped balun lies in its implementation flexibility. The substrate input unit 1 is built on an off-chip substrate using SMD components, effectively reducing the chip area, reducing the dependence on the semiconductor manufacturer's manufacturing process, and saving costs. Additionally, the advantage of the LC lumped balun is that it can achieve a 180° phase difference within a larger operating frequency band bandwidth.

[0075] Please refer to Figure 2 as shown in Figure 2 the circuit diagram of the substrate input unit 1 of the radio frequency power amplifier 100 of the present invention. Specifically, the substrate input unit 1 includes a first capacitor, a second capacitor, a first inductor, and a second inductor.

[0076] The circuit connection relationship of the substrate input unit 1 is as follows:

[0077] The first end of the first capacitor serves as the input end of the substrate input unit 1, and the first end of the first capacitor is connected to the first end of the second inductor.

[0078] The second end of the first capacitor serves as the first output end of the substrate input unit 1, and the second end of the first capacitor is connected to the first end of the first inductor. The second end of the first inductor is grounded to GND.

[0079] The second end of the second inductor serves as the second output end of the substrate input unit 1, and the second end of the second inductor is connected to the first end of the second capacitor. The second end of the second capacitor is grounded to GND.

[0080] The power amplifier unit 2 is used to amplify the power of the two first signals and suppress the second-order harmonics of the main frequency to generate two second signals.

[0081] Specifically, the power amplifier unit 2 includes a first input radio frequency matching network 21, a first driver stage power amplifier DA1, a first inter-stage matching network 22, a first amplification stage power amplifier PA1, a second input radio frequency matching network 23, a second driver stage power amplifier DA2, a second inter-stage matching network 24, a second amplification stage power amplifier PA2, a twelfth capacitor C12, a thirteenth capacitor C13, and a ninth capacitor C9. Among them, the first input radio frequency matching network 21 and the second input radio frequency matching network 23 are respectively used to perform impedance matching on the input signals. The first inter-stage matching network 22 and the second inter-stage matching network 24 are respectively used to suppress the second-order harmonics of the main frequency. The first driver stage power amplifier DA1, the first amplification stage power amplifier PA1, the second driver stage power amplifier DA2, and the second amplification stage power amplifier PA2 are all used for signal amplification.

[0082] The first input RF matching network 21 includes a third capacitor C3 and a third inductor L3.

[0083] The first inter-stage matching network 22 includes a seventh inductor L7, a fifth capacitor C5, a fifth inductor L5, and a seventh capacitor C7. The first inter-stage matching network 22 forms a CL RF matching network. Among them, the series resonant circuit composed of the fifth capacitor C5 and the fifth inductor L5 resonates at the second order of the main frequency, which can play a role in strengthening the suppression of the second harmonic of the main frequency.

[0084] The second input RF matching network 23 includes a fourth capacitor C4 and a fourth inductor L4.

[0085] The second inter-stage matching network 24 includes an eighth inductor L8, a sixth capacitor C6, a sixth inductor L6, and an eighth capacitor C8. The second inter-stage matching network 24 forms another CL RF matching network. Among them, another series resonant circuit composed of the sixth capacitor C6 and the sixth inductor L6 resonates at the second order of the main frequency, which can play a role in strengthening the suppression of the second harmonic of the main frequency.

[0086] In this embodiment, the third capacitor C3, the fourth capacitor C4, the fifth capacitor C5, the sixth capacitor C6, the seventh capacitor C7, the eighth capacitor C8, and the ninth capacitor C9 are all STACK capacitors or MIM capacitors.

[0087] The circuit connection relationship of the power amplifier unit 2 is as follows:

[0088] The first end of the third capacitor C3 serves as the first input end of the power amplifier unit 2, and the first end of the third capacitor C3 is connected to the first end of the third inductor L3. The second end of the third inductor L3 is grounded to GND.

[0089] The second end of the third capacitor C3 is connected to the input end of the first driver stage power amplifier DA1.

[0090] The output end of the first driver stage power amplifier DA1 is respectively connected to the second end of the seventh inductor L7, the first end of the fifth capacitor C5, and the first end of the seventh capacitor C7.

[0091] The first end of the seventh inductor L7 is respectively connected to the first power supply voltage VCC1, the first end of the eighth inductor L8, the first end of the twelfth capacitor C12, and the first end of the thirteenth capacitor C13. The second end of the twelfth capacitor C12 is grounded to GND. The second end of the thirteenth capacitor C13 is grounded to GND.

[0092] The second terminal of the fifth capacitor C5 is connected to the first terminal of the fifth inductor L5. The second terminal of the fifth inductor L5 is grounded to GND.

[0093] The second terminal of the seventh capacitor C7 is connected to the input terminal of the first-stage power amplifier PA1.

[0094] The output terminal of the first-stage power amplifier PA1 serves as the first output terminal of the power amplifier unit 2, and the output terminal of the first-stage power amplifier PA1 is connected to the first terminal of the ninth capacitor C9.

[0095] The first terminal of the fourth capacitor C4 serves as the second input terminal of the power amplifier unit 2, and the first terminal of the fourth capacitor C4 is connected to the first terminal of the fourth inductor L4. The second terminal of the fourth inductor L4 is grounded to GND.

[0096] The second terminal of the fourth capacitor C4 is connected to the input terminal of the second-drive-stage power amplifier DA2.

[0097] The output terminal of the second-drive-stage power amplifier DA2 is respectively connected to the second terminal of the eighth inductor L8, the first terminal of the sixth capacitor C6, and the first terminal of the eighth capacitor C8.

[0098] The second terminal of the sixth capacitor C6 is connected to the first terminal of the sixth inductor L6. The second terminal of the sixth inductor L6 is grounded to GND.

[0099] The second terminal of the eighth capacitor C8 is connected to the input terminal of the second-stage power amplifier PA2.

[0100] The output terminal of the second-stage power amplifier PA2 serves as the second output terminal of the power amplifier unit 2, and the output terminal of the second-stage power amplifier PA2 is connected to the second terminal of the ninth capacitor C9.

[0101] A first inter-stage matching network 22 is disposed between the first driver-stage power amplifier DA1 and the first amplifier-stage power amplifier PA1 of the power amplifier unit 2; a second inter-stage matching network 24 is disposed between the second driver-stage power amplifier DA2 and the second amplifier-stage power amplifier PA2 of the power amplifier unit 2. Both of these two matching networks adopt double-stage matching, which can improve the frequency bandwidth of the matching network, and further improve the operating bandwidth of the RF power amplifier 100. At the same time, the first inter-stage matching network 22 and the second inter-stage matching network 24 of the power amplifier unit 2 suppress the second harmonic of the main frequency, so that the second harmonic component generated by the power amplifier unit 2 is reduced. That is, the series resonant circuit composed of the fifth capacitor C5 and the fifth inductor L5 and another series resonant circuit composed of the sixth capacitor C6 and the sixth inductor L6 suppress the second harmonic before the first amplifier-stage power amplifier PA1 and the second amplifier-stage power amplifier PA2 respectively, so that the second harmonic component non-linearly generated by the first amplifier-stage power amplifier PA1 and the second amplifier-stage power amplifier PA2 will be significantly reduced. This circuit structure enables the RF power amplifier 100 of the present invention to have a good harmonic suppression effect when the output power is high.

[0102] The seventh inductor L7 is connected to the twelfth capacitor C12, and the eighth inductor L8 is connected to the thirteenth capacitor C13. The main functions of the two capacitors, the twelfth capacitor C12 and the thirteenth capacitor C13, are bypass capacitors for power supply to the power amplifier unit 2, so that the output power of the RF power amplifier 100 is high.

[0103] The substrate output unit 3 is configured to receive two second signals output by the power amplifier unit 2, perform power combination to convert them into a third signal, and suppress the harmonics of the third signal before outputting.

[0104] Please refer to Figure 3 as shown in Figure 3 is the circuit diagram of the substrate output unit 3 of the RF power amplifier 100 of the present invention.

[0105] Specifically, the substrate output unit 3 includes a transformer TF1, a tenth capacitor C10, an eleventh capacitor C11, a fourteenth capacitor C14, a series resonant network 31, and an output matching circuit 32.

[0106] Among them, the ninth capacitor C9, the tenth capacitor C10, and the eleventh capacitor C11 are respectively used as tuning capacitors for the balanced ports of the transformer TF1, and also realize adjusting the output impedance of the first amplifier-stage power amplifier PA1 and the output impedance of the second amplifier-stage power amplifier PA2. In addition to realizing power combination of the input two differential signals, the transformer TF1 also functions as a DC-blocking capacitor, which can reduce the number of SMDs in the module and save costs.

[0107] The balun of the substrate input unit 1 and the transformer TF1 of the substrate output unit 3 form a differential power amplifier. In addition to realizing power combination and enhancing the output power of the RF power amplifier in terms of structure, the differential structure itself can also realize the function of enhancing the suppression of even harmonics.

[0108] The circuit connection relationship of the substrate output unit 3 is as follows:

[0109] The first end of the primary coil of the transformer TF1 serves as the first input end of the substrate output unit 3. The second end of the primary coil of the transformer TF1 serves as the second input end of the substrate output unit 3.

[0110] The center tap end of the primary coil of the transformer TF1 is connected to the first end of the tenth capacitor C10, the first end of the fourteenth capacitor C14, and the second power supply voltage VCC2. The second end of the tenth capacitor C10 is grounded to GND. The second end of the fourteenth capacitor C14 is grounded to GND.

[0111] The first end of the secondary coil of the transformer TF1 is respectively connected to the interface end of the series resonance network 31 and the input end of the output matching circuit 32.

[0112] The second end of the secondary coil of the transformer TF1 is connected to the first end of the eleventh capacitor C11. The second end of the eleventh capacitor C11 is grounded to GND.

[0113] The output end of the output matching circuit 32 serves as the output end of the substrate output unit 3.

[0114] The series resonance network 31 is used to suppress harmonics above the fourth order. Specifically, the series resonance network 31 includes the fifteenth capacitor C15, the sixteenth capacitor C16, the ninth inductor L9, and the tenth inductor L10. The ninth inductor L9 and the fifteenth capacitor C15 form a series resonance circuit (Trap), which mainly suppresses harmonics above the fourth order. The tenth inductor L10 and the sixteenth capacitor C16 form another series resonance circuit (Trap), which mainly suppresses harmonics above the fourth order. The fifteenth capacitor C15 and the sixteenth capacitor C16 are respectively used as tuning capacitors for the balance ports of the transformer TF1, and also realize the adjustment of the output impedance of the first-stage power amplifier PA1 and the output impedance of the second-stage power amplifier PA2.

[0115] The circuit connection relationship of the series resonance network 31 is as follows:

[0116] The first end of the fifteenth capacitor C15 serves as the interface end of the series resonance network 31, and the first end of the fifteenth capacitor C15 is connected to the first end of the sixteenth capacitor C16.

[0117] The second end of the fifteenth capacitor C15 is connected to the first end of the ninth inductor L9. The second end of the ninth inductor L9 is grounded to GND.

[0118] The second end of the sixteenth capacitor C16 is connected to the first end of the tenth inductor L10. The second end of the tenth inductor L10 is grounded to GND.

[0119] The output matching circuit 32 is used to match the output impedance.

[0120] Specifically, the output matching circuit 32 includes a first low-pass matching network 321, a second low-pass matching network 322, a third low-pass matching network 323, and a band-stop matching network 324 connected in sequence.

[0121] The first low-pass matching network 321 includes the eleventh inductor L11, the seventeenth capacitor C17, and the twelfth inductor L12. A series resonance circuit (Trap) formed by the seventeenth capacitor C17 and the twelfth inductor L12 mainly suppresses the second-order harmonics.

[0122] The second low-pass matching network 322 includes the thirteenth inductor L13, the eighteenth capacitor C18, and the fourteenth inductor L14. A series resonance circuit (Trap) formed by the eighteenth capacitor C18 and the fourteenth inductor L14 mainly suppresses the second-order harmonics.

[0123] The third low-pass matching network 323 includes the fifteenth inductor L15, the nineteenth capacitor C19, and the sixteenth inductor L16. The series resonance circuit (Trap) formed by the nineteenth capacitor C19 and the sixteenth inductor L16 mainly suppresses the third-order harmonics.

[0124] The band-stop matching network 324 includes the twentieth capacitor C20 and the seventeenth inductor L17. A parallel resonance circuit (Tank) formed by the twentieth capacitor C20 and the seventeenth inductor L17 mainly suppresses the third-order harmonics.

[0125] The circuit connection relationship of the output matching circuit 32 is as follows:

[0126] The first end of the eleventh inductor L11 serves as the input end of the output matching circuit 32.

[0127] The second end of the eleventh inductor L11 is respectively connected to the first end of the seventeenth capacitor C17 and the first end of the thirteenth inductor L13. The second end of the seventeenth capacitor C17 is connected to the first end of the twelfth inductor L12. The second end of the twelfth inductor L12 is grounded to GND.

[0128] The second end of the thirteenth inductor L13 is respectively connected to the first end of the eighteenth capacitor C18 and the first end of the fifteenth inductor L15. The second end of the eighteenth capacitor C18 is connected to the first end of the fourteenth inductor L14. The second end of the fourteenth inductor L14 is grounded to GND.

[0129] The second end of the fifteenth inductor L15 is respectively connected to the first end of the nineteenth capacitor C19, the first end of the twentieth capacitor C20, and the first end of the seventeenth inductor L17. The second end of the nineteenth capacitor C19 is connected to the first end of the sixteenth inductor L16. The second end of the sixteenth inductor L16 is grounded to GND.

[0130] The second end of the twentieth capacitor C20 serves as the input end of the output matching circuit 32, and the second end of the twentieth capacitor C20 is connected to the second end of the seventeenth inductor L17.

[0131] In this embodiment, the implementation form of the inductor adopted in the substrate output unit 3 can be SMT form, or wire-wound inductor form, or IPD form. The implementation form of the capacitor adopted in the substrate output unit 3 can be SMT form or IPD form.

[0132] In this embodiment, the working frequency bandwidth of the radio frequency power amplifier 100 is verified by simulating the radio frequency power amplifier 100. Please refer to Figure 4 as shown Figure 4 is the curve graph of the gain and frequency relationship of the radio frequency power amplifier 100 provided by the embodiment of the present invention. Curve S(1,1) is the input power curve of the radio frequency power amplifier 100, and curve S(2,1) is the output power curve of the radio frequency power amplifier 100. Among them, the frequency of frequency point m7 is 1.616 GHz, and the gain dB(S(2,1)) of frequency point m7 is 34.190; the frequency of frequency point m8 is 3.232 GHz, and the gain dB(S(2,1)) of frequency point m8 is -88.845; the frequency of frequency point m16 is 4.848 GHz, and the gain dB(S(2,1)) of frequency point m16 is -1007.518; from the comparison of the gains and frequencies of different frequency points m7, m8, and m16 on the graph, it can be seen that the working frequency bandwidth of the radio frequency power amplifier 100 of the present invention is high.

[0133] In this embodiment, the saturation power of the radio frequency power amplifier 100 is verified by simulating the radio frequency power amplifier 100. Please refer to Figure 5 as shown in Figure 5 FIG. 4 is a graph showing the relationship between the gain and the output power of the radio frequency power amplifier 100 provided by the embodiment of the present invention. It can be seen from the figure that the saturation power of the radio frequency power amplifier 100 of the present invention is high.

[0134] The embodiment of the present invention provides a substrate module, which includes a substrate and the radio frequency power amplifier 100 welded to the substrate.

[0135] In this embodiment, the power amplifier unit 2 is a semiconductor chip. The substrate input unit 1 and the substrate output unit 3 are both made of a plurality of discrete components.

[0136] The substrate module provided by the embodiment of the present invention can implement various embodiments and corresponding beneficial effects in the embodiment of the radio frequency power amplifier 100. To avoid repetition, it will not be described in detail here.

[0137] It should be noted that the relevant circuits, transformers, capacitors, inductors, and power amplifiers used in the present invention are common circuits and components in the art. The corresponding specific indicators and parameters are adjusted according to actual applications and will not be described in detail here.

[0138] Compared with the related art, the radio frequency power amplifier and the substrate module of the present invention are provided with a first inter-stage matching network and a second inter-stage matching network in the power amplifier unit. Among them, the first inter-stage matching network includes a seventh inductor, a fifth capacitor, a fifth inductor, and a seventh capacitor; the second inter-stage matching network includes an eighth inductor, a sixth capacitor, a sixth inductor, and an eighth capacitor; the first inter-stage matching network and the second inter-stage matching network improve the frequency bandwidth of the matching network, thereby improving the working bandwidth of the radio frequency power amplifier, so that the working frequency bandwidth of the radio frequency power amplifier is high. More preferably, the radio frequency power amplifier of the present invention is provided with a substrate input unit and a substrate output unit before and after the power amplifier unit respectively. The balun of the substrate input unit and the transformer of the substrate output unit form a differential power amplifier, and its differential structure itself can also implement the function of enhancing the suppression of even harmonics. The series resonance network of the substrate output unit suppresses harmonics above the fourth order; the output matching circuit of the substrate output unit realizes the suppression of the second and third harmonics; at the same time, the power amplifier unit suppresses the second harmonic of the main frequency through the first inter-stage matching network and the second inter-stage matching network, so as to reduce the second harmonic component generated by the power amplifier unit; thus, the radio frequency power amplifier and the substrate module of the present invention have good harmonic suppression effects when the output power is high.

[0139] It should be noted that the various embodiments described above with reference to the accompanying drawings are only used to illustrate the present invention rather than to limit the scope of the present invention. Those of ordinary skill in the art should understand that any modification or equivalent replacement made to the present invention without departing from the spirit and scope of the present invention shall be covered within the scope of the present invention. In addition, unless otherwise indicated by the context, words in the singular form include the plural form and vice versa. Additionally, unless otherwise specified, all or part of any embodiment can be used in combination with all or part of any other embodiment.

Claims

1. A radio frequency power amplifier, characterized in that, The radio frequency power amplifier includes a substrate input unit, a power amplifier unit, and a substrate output unit connected in sequence; The substrate input unit is configured to receive an external single-ended signal and convert it into two first signals with the same power and a phase difference of 180°; The power amplifier unit is configured to amplify the power of the two first signals and suppress the second harmonic of the main frequency to generate two second signals; The substrate output unit is configured to perform power combination on the two second signals to convert them into a third signal, and suppress the harmonics of the third signal before outputting; The power amplifier unit includes a first input radio frequency matching network, a first driver stage power amplifier, a first inter-stage matching network, a first amplification stage power amplifier, a second input radio frequency matching network, a second driver stage power amplifier, a second inter-stage matching network, a second amplification stage power amplifier, a twelfth capacitor, a thirteenth capacitor, and a ninth capacitor; the first input radio frequency matching network includes a third capacitor and a third inductor; the first inter-stage matching network includes a seventh inductor, a fifth capacitor, a fifth inductor, and a seventh capacitor, and is configured to suppress the second harmonic of the main frequency; the second input radio frequency matching network includes a fourth capacitor and a fourth inductor; the second inter-stage matching network includes an eighth inductor, a sixth capacitor, a sixth inductor, and an eighth capacitor, and is configured to suppress the second harmonic of the main frequency; The first end of the third capacitor serves as the first input end of the power amplifier unit, and the first end of the third capacitor is connected to the first end of the third inductor, and the second end of the third inductor is grounded; The second end of the third capacitor is connected to the input end of the first driver stage power amplifier; The output end of the first driver stage power amplifier is respectively connected to the second end of the seventh inductor, the first end of the fifth capacitor, and the first end of the seventh capacitor; The first end of the seventh inductor is respectively connected to a first power supply voltage, the first end of the eighth inductor, the first end of the twelfth capacitor, and the first end of the thirteenth capacitor, the second end of the twelfth capacitor is grounded, and the second end of the thirteenth capacitor is grounded; The second end of the fifth capacitor is connected to the first end of the fifth inductor, and the second end of the fifth inductor is grounded; The second end of the seventh capacitor is connected to the input end of the first amplification stage power amplifier; The output end of the first amplification stage power amplifier serves as the first output end of the power amplifier unit, and the output end of the first amplification stage power amplifier is connected to the first end of the ninth capacitor; The first end of the fourth capacitor serves as the second input end of the power amplifier unit, and the first end of the fourth capacitor is connected to the first end of the fourth inductor, and the second end of the fourth inductor is grounded; The second end of the fourth capacitor is connected to the input end of the second driver stage power amplifier; The output end of the second driver stage power amplifier is respectively connected to the second end of the eighth inductor, the first end of the sixth capacitor, and the first end of the eighth capacitor; The second end of the sixth capacitor is connected to the first end of the sixth inductor, and the second end of the sixth inductor is grounded; The second terminal of the eighth capacitor is connected to the input terminal of the second-stage power amplifier; The output terminal of the second-stage power amplifier serves as the second output terminal of the power amplifier unit, and the output terminal of the second-stage power amplifier is connected to the second terminal of the ninth capacitor.

2. The RF power amplifier according to claim 1, wherein The substrate input unit is an LC lumped balun.

3. The RF power amplifier according to claim 2, characterized in that, The substrate input unit includes a first capacitor, a second capacitor, a first inductor, and a second inductor; The first terminal of the first capacitor serves as the input terminal of the substrate input unit, and the first terminal of the first capacitor is connected to the first terminal of the second inductor; The second terminal of the first capacitor serves as the first output terminal of the substrate input unit, and the second terminal of the first capacitor is connected to the first terminal of the first inductor, and the second terminal of the first inductor is grounded; The second terminal of the second inductor serves as the second output terminal of the substrate input unit, and the second terminal of the second inductor is connected to the first terminal of the second capacitor, and the second terminal of the second capacitor is grounded.

4. The RF power amplifier according to claim 1, wherein The substrate output unit includes a transformer, a tenth capacitor, an eleventh capacitor, a fourteenth capacitor, a series resonance network, and an output matching circuit; The series resonance network is used to suppress harmonics above the fourth order; The output matching circuit is used to match the output impedance; The first terminal of the primary coil of the transformer serves as the first input terminal of the substrate output unit; the second terminal of the primary coil of the transformer serves as the second input terminal of the substrate output unit; The center tap terminal of the primary coil of the transformer is connected to the first terminal of the tenth capacitor, the first terminal of the fourteenth capacitor, and the second power supply voltage, the second terminal of the tenth capacitor is grounded, and the second terminal of the fourteenth capacitor is grounded; The first terminal of the secondary coil of the transformer is respectively connected to the interface terminal of the series resonance network and the input terminal of the output matching circuit; The second terminal of the secondary coil of the transformer is connected to the first terminal of the eleventh capacitor, and the second terminal of the eleventh capacitor is grounded; The output terminal of the output matching circuit serves as the output terminal of the substrate output unit.

5. The RF power amplifier according to claim 4, characterized in that The series resonance network includes a fifteenth capacitor, a sixteenth capacitor, a ninth inductor, and a tenth inductor; The first terminal of the fifteenth capacitor serves as the interface terminal of the series resonance network, and the first terminal of the fifteenth capacitor is connected to the first terminal of the sixteenth capacitor; The second terminal of the fifteenth capacitor is connected to the first terminal of the ninth inductor, and the second terminal of the ninth inductor is grounded; The second terminal of the sixteenth capacitor is connected to the first terminal of the tenth inductor, and the second terminal of the tenth inductor is grounded.

6. The RF power amplifier according to claim 4, characterized in that The output matching circuit includes a first low-pass matching network, a second low-pass matching network, a third low-pass matching network, and a band-stop matching network connected in sequence.

7. The RF power amplifier according to claim 6, characterized in that, The first low-pass matching network includes an eleventh inductor, a seventeenth capacitor, and a twelfth inductor; The second low-pass matching network includes a thirteenth inductor, an eighteenth capacitor, and a fourteenth inductor; The third low-pass matching network includes a fifteenth inductor, a nineteenth capacitor, and a sixteenth inductor; The band-stop matching network includes a twentieth capacitor and a seventeenth inductor; The first end of the eleventh inductor serves as the input end of the output matching circuit; The second end of the eleventh inductor is respectively connected to the first end of the seventeenth capacitor and the first end of the thirteenth inductor; the second end of the seventeenth capacitor is connected to the first end of the twelfth inductor, and the second end of the twelfth inductor is grounded; The second end of the thirteenth inductor is respectively connected to the first end of the eighteenth capacitor and the first end of the fifteenth inductor; the second end of the eighteenth capacitor is connected to the first end of the fourteenth inductor, and the second end of the fourteenth inductor is grounded; The second end of the fifteenth inductor is respectively connected to the first end of the nineteenth capacitor, the first end of the twentieth capacitor and the first end of the seventeenth inductor; the second end of the nineteenth capacitor is connected to the first end of the sixteenth inductor, and the second end of the sixteenth inductor is grounded; The second end of the twentieth capacitor serves as the input end of the output matching circuit, and the second end of the twentieth capacitor is connected to the second end of the seventeenth inductor.

8. The RF power amplifier according to claim 1, wherein The third capacitor, the fourth capacitor, the fifth capacitor, the sixth capacitor, the seventh capacitor, the eighth capacitor and the ninth capacitor are all STACK capacitors or MIM capacitors.

9. A substrate module, characterized in that, The substrate module includes a substrate and a radio frequency power amplifier as described in any one of claims 1-8 welded to the substrate.

10. The substrate module according to claim 9, wherein The power amplifier unit is a semiconductor chip; both the substrate input unit and the substrate output unit are made of a plurality of discrete components.

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