Reset method of ovonic threshold switch type gating tube

Abstract

The application discloses a reset method of an ovonic threshold switch type gating tube and belongs to the technical field of micro-nano electronics, which comprises the following steps: when the resistance value of the ovonic threshold switch type gating tube is lower than the minimum resistance value R of the ovonic threshold switch type gating tube in a normal state low , a sequence voltage pulse with a stepped increasing amplitude is applied to the ovonic threshold switch type gating tube to reset the ovonic threshold switch type gating tube, so that the gating tube, which has degraded switching performance or even completely lost switching performance due to the continuous accumulation of operation times, regains normal threshold switching performance, thereby inhibiting the leakage current in a storage array and reducing the power consumption of the storage array.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of micro-nano electronic technology, and more particularly relates to a reset method of an Ovonic threshold switching type gating tube. BACKGROUND

[0002] With the vigorous development of big data, cloud computing and Internet of Things industries, along with the explosive growth of massive information and the ever-expanding market demand, efficient storage and convenient transmission of data are strict requirements for contemporary storage technology, and various new high-performance storage technologies have emerged. Among them, the phase change storage technology has been widely recognized in the industry due to its mature material system, simple preparation process, good CMOS compatibility, high device reliability, and advantages in speed and service life. There is a problem of leakage current in the phase change memory, and the gating current may flow through the surrounding cells, thereby affecting the device reliability and causing problems such as misreading and misoperation, so each storage cell must be connected to a gating tube.

[0003] For an Ovonic threshold switching type gating tube device, cycle stability is one of the most critical performance indicators for measuring whether the device can be integrated with a storage cell. When the gating tube is integrated with the storage cell, the erase, write and read operations of the storage cell all require the gating tube to be turned on, so the cycle characteristics of the gating tube must be much better than those of the storage cell. The cycle capability of the gating tube is directly related to the service life of the storage chip. However, as the number of operations continues to accumulate, the switching performance of the gating tube will degrade or even completely lose its switching performance, mainly manifested in that the material of the gating tube partially crystallizes, reducing the resistance of the device in the off state and increasing the leakage current of the device, resulting in a decrease in the ability of the gating tube to suppress the leakage current in the storage array and an increase in the overall power consumption of the device. Therefore, there is an urgent need for a reset method for the gating tube, which can reset the gating tube to a state with good switching characteristics when the performance of the gating tube degrades or completely fails, meeting the demand for gating tubes with high cycle characteristics and good switching characteristics in integrated arrays. SUMMARY

[0004] In view of the above defects or improvement needs of the prior art, the present application provides a reset method for an Ovonic threshold switching type gating tube, which aims to enable the gating tube to regain normal threshold switching performance due to the degradation of switching performance or complete loss of switching performance caused by the continuous accumulation of the number of operations.

[0005] To achieve the above-mentioned purpose, in a first aspect, the present application provides a reset method for an Ovonic threshold switching type gating tube, comprising:

[0006] When the resistance value of the Ovonic threshold switching type gating tube is lower than the minimum resistance value R lowThe sequence voltage pulse with the stepwise increasing amplitude is applied to the Ovonic Threshold Switch type gate tube to reset the Ovonic Threshold Switch type gate tube.

[0007] Further preferably, the resetting method of the Ovonic Threshold Switch type gate tube comprises the following steps:

[0008] A1, reading the resistance value of the Ovonic Threshold Switch type gate tube, judging whether the condition of the resetting operation is met, if yes, going to step A2; otherwise, the operation is ended; wherein the condition of the resetting operation is that the resistance value of the Ovonic Threshold Switch type gate tube is lower than the minimum resistance value R low of the Ovonic Threshold Switch type gate tube in the normal state, and the cycle number is less than the preset cycle number;

[0009] A2, applying the sequence voltage pulse with the stepwise increasing amplitude to the Ovonic Threshold Switch type gate tube, and going to step A1 for circulation.

[0010] Further preferably, the preset cycle number is 3.

[0011] Further preferably, the initial amplitude of the sequence voltage pulse with the stepwise increasing amplitude is 1V-2V, the amplitude interval is 0.1-1V, the rising edge is 100ps-1us, and the falling edge is 100ps-1us.

[0012] Further preferably, R low is 0.5MΩ-2MΩ.

[0013] Further preferably, the resistance value of the Ovonic Threshold Switch type gate tube is read by applying the constant amplitude pulse to the Ovonic Threshold Switch type gate tube to reduce the damage to the Ovonic Threshold Switch type gate tube.

[0014] Further preferably, the initial amplitude of the constant amplitude pulse is 0.1V-1V, the pulse width is 10ns-1us, the rising edge is 100ps-1us, and the falling edge is 100ps-1us.

[0015] Further preferably, the material layer of the Ovonic Threshold Switch type gate tube comprises a compound composed of one or more elements selected from S, Se, and Te and one or more elements selected from B, C, O, N, Mg, Al, Si, P, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, In, Sn, and Sb.

[0016] In the second aspect, the application provides an Ovonic Threshold Switch type gate tube controller, comprising a memory and a processor, the memory stores a computer program, and the processor executes the computer program to execute the resetting method of the Ovonic Threshold Switch type gate tube provided in the first aspect of the application.

[0017] In a third aspect, the present application also provides a computer readable storage medium comprising a stored computer program, wherein the computer program, when executed by a processor, controls a device in which the storage medium is located to perform the resetting method of the Ovonic threshold switch type gating tube according to the first aspect of the present application.

[0018] Overall, the above technical solutions conceived by the present application can achieve the following beneficial effects:

[0019] 1. The present application provides a resetting method of an Ovonic threshold switch type gating tube. Considering that the Ovonic threshold switch type gating tube will exhibit material crystallization after the number of operations is continuously accumulated, the present application proposes to apply a voltage pulse with an amplitude to make the material undergo a melting and cooling process, so as to restore the material to an amorphous state. Furthermore, considering that the required voltage amplitude is different for different devices, the present application applies a sequence of voltage pulses with a stepwise increasing amplitude to the Ovonic threshold switch type gating tube for resetting. Based on this, the present application can make the gating tube that has degraded switching performance or even completely lost switching performance due to the continuous accumulation of the number of operations regain normal threshold switching performance, thereby inhibiting the leakage current in the storage array and reducing the power consumption of the storage array.

[0020] 2. The resetting method of the Ovonic threshold switch type gating tube provided by the present application can reset the gating tube multiple times, greatly improving the service life of the gating tube device and meeting the demand for gating tubes with high cycle characteristics in integrated arrays.

[0021] 3. The resetting method of the Ovonic threshold switch type gating tube provided by the present application can refresh devices with poor electrical performance, thereby reducing the leakage current of the devices. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 The resetting method of the Ovonic threshold switch type gating tube provided by the present application is shown in the flowchart;

[0023] Figure 2 The switching characteristic curve of the GeTe-based gating tube when it fails is shown in the schematic diagram;

[0024] Figure 3 The process flowchart of resetting operation and switching detection of the GeTe-based Ovonic threshold switch type gating tube device using the resetting method provided by the present application is shown in the flowchart;

[0025] Figure 4A schematic diagram of a switching characteristic curve of the GeTe-based Austrian threshold switch type gating tube device against failure after reset operation by the reset method provided by the embodiment of the present application;

[0026] Figure 5 A current response diagram of pulse switching detection after reset operation by the reset method provided by the embodiment of the present application on the GeTe-based Austrian threshold switch type gating tube device against failure. DETAILED DESCRIPTION

[0027] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and should not be used to limit the present application. In addition, the technical features involved in each embodiment of the present application described below can be combined with each other as long as they do not conflict with each other.

[0028] In order to achieve the above-mentioned purpose, in a first aspect, the present application provides a reset method of an Austrian threshold switch type gating tube, comprising:

[0029] When the resistance value of the Austrian threshold switch type gating tube is lower than the minimum resistance value R low of the Austrian threshold switch type gating tube in a normal state, a sequence of voltage pulses with a stepwise increasing amplitude is applied to the Austrian threshold switch type gating tube to reset the Austrian threshold switch type gating tube.

[0030] It should be noted that considering that the Austrian threshold switch type gating tube which has degraded switching performance or even completely lost switching performance due to the continuous accumulation of operation times is generally in a low resistance failure state, the present application processes the scenario that the resistance value of the Austrian threshold switch type gating tube is lower than the minimum resistance value R low of the Austrian threshold switch type gating tube in a normal state.

[0031] Specifically, in an optional embodiment, as shown in Figure 1 the reset method of the Austrian threshold switch type gating tube specifically comprises the following steps:

[0032] A1, read the resistance value of the Austrian threshold switch type gating tube, determine whether the condition for reset operation is met, if yes, go to step A2; otherwise, the operation is ended; wherein the condition for reset operation is that the resistance value of the Austrian threshold switch type gating tube is lower than the minimum resistance value R low of the Austrian threshold switch type gating tube in a normal state, and the cycle number is less than a preset cycle number (in this embodiment, the value is 3);

[0033] A2, a sequence of voltage pulses with stepwise increasing amplitude is applied to the Ovonic Threshold Switch type gating tube, and the process goes to step A1 for circulation.

[0034] Preferably, in an alternative embodiment, the initial amplitude of the sequence of voltage pulses with stepwise increasing amplitude is 1V-2V, the amplitude interval is 0.1-1V, the rising edge is 100ps-1us, and the falling edge is 100ps-1us.

[0035] In an alternative embodiment, the minimum resistance value R of the Ovonic Threshold Switch type gating tube in the normal state is obtained by counting the resistance values of the same Ovonic Threshold Switch type gating tube in the normal state. low The minimum resistance value R is 0.5MΩ-2MΩ.

[0036] In an alternative embodiment, the resistance value of the Ovonic Threshold Switch type gating tube can be read by applying a constant amplitude pulse or by I-V scanning. Preferably, in order to prevent further damage to the Ovonic Threshold Switch type gating tube caused by excessive operation, the resistance value of the Ovonic Threshold Switch type gating tube is preferably read by applying a constant amplitude pulse, i.e. the resistance value of the Ovonic Threshold Switch type gating tube is read by applying a constant amplitude pulse to it; wherein the initial amplitude of the applied constant amplitude pulse is 0.1V-1V, the pulse width is 10ns-1us, the rising edge is 100ps-1us, and the falling edge is 100ps-1us.

[0037] In an alternative embodiment, the material layer of the above-mentioned Ovonic Threshold Switch type gating tube comprises a compound composed of one or more elements selected from S, Se, and Te, and one or more elements selected from B, C, O, N, Mg, Al, Si, P, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, In, Sn, Sb.

[0038] In order to further illustrate the resetting method of the Ovonic Threshold Switch type gating tube provided by the present application, the following takes a GeTe-based gating tube with Ovonic Threshold Switch characteristics as an example. When the GeTe-based Ovonic Threshold Switch type gating tube device has degraded switching performance or even completely lost switching performance due to the continuous accumulation of operation times, the resetting method provided by the present application is used for resetting operation and switching detection.

[0039] Specifically, first, if the GeTe-based Austenite threshold switching type gating tube device has not been initialized, a constant amplitude pulse (amplitude 3V-8V, pulse width 10ns-1μs, rising edge 100ps-1μs, falling edge 100ps-1μs) is applied to the device to initialize the device. Then, the GeTe-based Austenite threshold switching type gating tube device is continuously switched until the device performance degrades. In implementation, the GeTe-based Austenite threshold switching type gating tube device is continuously applied with a pulse with amplitude 2V, pulse width 100ns, rising edge 100ps-1μs, and falling edge 100ps-1μs. Specifically, the switching characteristic curve of the GeTe-based gating tube when it fails is as shown in FIG. 1. Figure 2

[0040] Finally, the following operation is performed as shown in FIG. 4. Figure 3

[0041] S1, a constant amplitude pulse pulse1 is used to read the resistance value of the device.

[0042] In implementation, the constant amplitude pulse pulse1 has amplitude 0.5-1V, pulse width 10ns-1μs, rising edge 100ps-1μs, and falling edge 100ps-1μs. After the constant amplitude pulse pulse1 is applied to the device, the device has no obvious change.

[0043] S2, it is determined whether the resistance value is higher than the minimum resistance value R high of the device in a normal state. If yes, step S5 is entered, and if no, it is determined whether the resistance value is lower than the minimum resistance value R low of the device in a normal state. If yes, step S3 is entered, and if no, step S6 is entered.

[0044] In this embodiment, the resistance order of magnitude of the device in a normal state is 1MΩ-1GΩ, i.e., R high is 1GΩ and R low is 1MΩ.

[0045] It should be noted that, considering that the device may fail in high resistance due to the excessively high pulse voltage applied in the operation, in addition to the determination and processing of low resistance failure, the high resistance failure state of the device is also determined and the corresponding processing is also given.

[0046] S3, a sequence of voltage pulses pulse2 with stepwise increasing amplitude is applied to the device.

[0047] ​​In this embodiment, the initial amplitude of the sequence voltage pulse pulse2 with stepped increasing amplitude is 1V-2V, the amplitude interval is 0.1-1V, the rising edge is 100ps-1us, and the falling edge is 100ps-1us. After pulse2 is applied to the device, the resistance of the device obviously increases.

[0048] S4, the counter is incremented by one, and it is determined whether the value of the counter is less than 3. If yes, step S1 is entered, and if no, the operation is ended. It should be noted that through experiments, it is found that if the sequence voltage pulse with stepped increasing amplitude is still unable to restore the device, the sequence voltage pulse with stepped increasing amplitude can be applied again, but if the device cannot be restored after more than 3 times of repetition, it is considered that the device cannot be restored, and it is not necessary to continue to apply. Based on this, the upper limit of the number of operations is set in this embodiment to avoid invalid work.

[0049] S5, a constant amplitude pulse pulse3 is applied to the device to perform initialization operation.

[0050] It should be noted that after the constant amplitude pulse pulse3 is applied to the device, the device will switch once. Considering that for the device with high resistance failure, the resistance value can be reduced to the normal resistance value after one switching, therefore, in this embodiment, a constant amplitude pulse pulse3 is applied to the device with resistance value higher than the minimum resistance value R high of the device in the normal state to perform initialization operation. In this embodiment, the amplitude of pulse3 is 3V-8V, the pulse width is 10ns-1us, the rising edge is 100ps-1us, and the falling edge is 100ps-1us.

[0051] S6, a constant amplitude switching detection pulse pulse4 is applied to the device to perform switching detection.

[0052] In this embodiment, the amplitude of the switching detection pulse pulse4 is 1.5V-2.5V, the pulse width is 10ns-1us, the rising edge is 100ps-1us, and the falling edge is 100ps-1us. After pulse4 is applied to the device, the device will switch once, and the resistance value before and after switching is basically unchanged.

[0053] S7, it is determined whether the device is opened. If yes, the operation is ended, and if no, the operation is ended and Failure is output.

[0054] Specifically, after the reset method provided by the present application is used to perform reset operation on the Ovonic threshold switching type gating tube, the switching characteristic curve of the GeTe-based gating tube is as shown in Figure 4 , and the current response graph of the pulse switching detection is as shown in Figure 5 . Figure 4 and Figure 5As can be seen, after the resetting by the resetting method provided by the application, the gate tube whose switching performance is degraded or even lost completely due to the continuous accumulation of operation times can be restored to normal threshold switching performance.

[0055] In the second aspect, the application provides an OR threshold switch type gate tube controller, comprising a memory and a processor, the memory stores a computer program, and the processor executes the computer program to execute the resetting method of the OR threshold switch type gate tube provided in the first aspect of the application.

[0056] The related technical solution is the same as the resetting method of the OR threshold switch type gate tube provided in the first aspect of the application, and will not be repeated here.

[0057] In the third aspect, the application further provides a computer readable storage medium, which comprises a stored computer program, wherein when the computer program is run by a processor, the storage medium controls the device where the storage medium is located to execute the resetting method of the OR threshold switch type gate tube provided in the first aspect of the application.

[0058] The related technical solution is the same as the resetting method of the OR threshold switch type gate tube provided in the first aspect of the application, and will not be repeated here.

[0059] Those skilled in the art can easily understand that the above description is only a preferred embodiment of the application, and is not intended to limit the application, and any modification, equivalent replacement and improvement made within the spirit and principle of the application shall be included in the protection scope of the application.

Claims

1. A method of resetting an ovonic threshold switch type gating tube, characterized by, Comprising: When the resistance value of the ovonic threshold switch type gating tube is lower than the minimum resistance value R of the ovonic threshold switch type gating tube in the normal state low A sequence of voltage pulses with stepwise increasing amplitude is applied to the ovonic threshold switch type gating tube to reset the ovonic threshold switch type gating tube, specifically including the following steps: A1, read the resistance value of the ovonic threshold switch type gating tube, judge whether the condition of reset operation is met, if yes, go to step A2; otherwise, the operation is ended; wherein, the condition of reset operation is that the resistance value of the ovonic threshold switch type gating tube is lower than the minimum resistance value R low of the ovonic threshold switch type gating tube in the normal state, and the cycle number is less than the preset cycle number; A2, a sequence of voltage pulses with stepwise increasing amplitude is applied to the threshold switching type gating tube, and the step A1 is recycled.

2. The method of resetting an ovonic threshold switch type gating tube according to claim 1, wherein The preset cycle number is 3.

3. The method of claim 1 or 2, wherein the method further comprises: The initial amplitude of the sequence of voltage pulses with stepwise increasing amplitude is 1V-2V, the amplitude interval is 0.1-1V, the rising edge is 100ps-1us, and the falling edge is 100ps-1us.

4. The reset method of an ovonic threshold switch type gating tube according to any one of claims 1 to 2, characterized by, R low is 0.5 MΩ to 2 MΩ.

5. The reset method of an ovonic threshold switch type gating tube according to any one of claims 1 to 2, characterized by, The resistance value of the threshold switching type gating tube is read by applying a constant amplitude pulse to the threshold switching type gating tube.

6. The method of resetting an ovonic threshold switch type gating tube according to claim 5, wherein The initial amplitude of the constant amplitude pulse is 0.1V-1V, the pulse width is 10ns-1us, the rising edge is 100ps-1us, and the falling edge is 100ps-1us.

7. The method of claim 1-2, wherein the method is a method of resetting an ovonic threshold switch type gating tube. The material layer of the threshold switching type gating tube comprises a compound composed of one or more elements selected from S, Se, Te and one or more elements selected from B, C, O, N, Mg, Al, Si, P, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, In, Sn, Sb.

8. An ovonic threshold switch type gating tube controller characterized by, Comprising: A memory and a processor, the memory stores a computer program, and the processor executes the computer program to execute the reset method of the threshold switching type gating tube according to any one of claims 1-7.

9. A computer-readable storage medium, characterized in that, The computer readable storage medium comprises a stored computer program, wherein the computer program is run by the processor to control the device where the storage medium is located to execute the reset method of the threshold switching type gating tube according to any one of claims 1-7.

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