A device and circuit for verifying the temperature rise characteristics of a tsx thermosensitive crystal

Abstract

The application belongs to the technical field of crystal oscillators, and particularly relates to a device and circuit capable of verifying the temperature-sensing (TSX) crystal heating characteristics, which comprises a temperature-sensing crystal device and a temperature conduction test circuit board connected with each other, the temperature-sensing crystal device comprises a device base, a first thermistor and a second thermistor, the device base is provided with a device mounting groove, a base upper cover is fixed to the top end of the base to form a closed cavity, the first thermistor is fixed to the device mounting groove, the first thermistor is accommodated in the closed cavity, and the second thermistor is fixedly arranged at the bottom of the device base, so that the real temperature change of the temperature-sensing crystal device is obtained, the phenomenon of temperature drift of the TSX temperature-sensing crystal during frequency output is prevented, the quality of the TSX temperature-sensing crystal is ensured, the yield of products is improved, and the use experience of users is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of crystal oscillator, in particular to a device and circuit for verifying the temperature rising characteristics of TSX thermosensitive crystal. BACKGROUND

[0002] In the field of quartz crystal oscillator, there are two kinds of crystal oscillators capable of adjusting frequency output by sensing temperature, namely TCXO temperature compensation crystal oscillator and TSX thermosensitive crystal. Among them, the TCXO temperature compensation crystal oscillator has high cost, resulting in narrow application; while the TSX thermosensitive crystal has lower manufacturing cost and high production efficiency, and is widely used in various industries, so that the TSX thermosensitive crystal gradually replaces the TCXO temperature compensation crystal oscillator.

[0003] At present, the general production process of TSX thermosensitive crystal is to tightly attach a thermistor to the back of the crystal base, and to use the change of the resistance value of the thermistor as the main means of sensing temperature change. However, since the wafer is sealed in the inside of the base, and the thermistor is tightly attached to the surface of the base, even if the thermistor is firmly attached to the surface of the base, there is always a temperature difference between the thermistor and the wafer, and the temperature changes of the two are inconsistent, so that the thermistor cannot accurately obtain the real temperature change of the wafer, resulting in temperature drift of the frequency output of the TSX thermosensitive crystal, affecting the quality of the TSX thermosensitive crystal, and causing the user to be unable to calibrate when using the TSX thermosensitive crystal, greatly reducing the user experience. SUMMARY

[0004] The present application aims to provide a device for verifying the temperature rising characteristics of TSX thermosensitive crystal, and aims to solve the technical problem that in the prior art, since the wafer is sealed in the inside of the base, and the thermistor is tightly attached to the surface of the base, there is a temperature difference between the thermistor and the wafer, and the temperature changes of the two are inconsistent, so that the thermistor cannot accurately obtain the real temperature change of the wafer, resulting in temperature drift of the frequency output of the TSX thermosensitive crystal, affecting the quality of the TSX thermosensitive crystal.

[0005] To achieve the above-mentioned purpose, the present application provides a device for verifying the temperature rising characteristics of TSX thermosensitive crystal, which comprises a thermosensitive crystal device and a temperature conduction test circuit board connected to each other, the thermosensitive crystal device comprises a device base, a first thermistor and a second thermistor, the device base is provided with a device mounting groove, a base cover is fixed to the top end of the base to form a closed cavity, the first thermistor is fixed in the device mounting groove, the first thermistor is accommodated in the closed cavity, and the second thermistor is tightly fixed to the bottom of the device base.

[0006] Optionally, the first thermistor is fixed to the device mounting groove by conductive silver glue, and the second thermistor is fixed to the bottom of the device base by conductive silver glue.

[0007] Optionally, the bottom of the device base is respectively provided with a first pad, a second pad, a third pad and a fourth pad, one end of the first thermistor is connected to the first pad by a wire, the other end of the first thermistor is connected to the third pad by a wire, one end of the second thermistor is connected to the second pad by a wire, and the other end of the second thermistor is connected to the fourth pad by a wire, and the first thermistor and the second thermistor are connected in opposite directions.

[0008] Optionally, the first thermistor and the second thermistor are of the same material specification.

[0009] Optionally, the temperature conduction test circuit board is provided with a power supply module, a control module, a heating module, a power amplification module and a crystal test module, the power supply module, the control module, the power amplification module and the heating module are arranged from left to right on the upper side of the temperature conduction test circuit board, and the crystal test module is arranged on the lower side of the temperature conduction test circuit board.

[0010] Optionally, the crystal test module includes a first test module, a second test module, a third test module, a fourth test module and a fifth test module, and the first test module, the second test module, the third test module, the fourth test module and the fifth test module are sequentially arranged from left to right on the lower side of the temperature conduction test circuit board.

[0011] A circuit capable of verifying the temperature rising characteristics of a TSX thermosensitive crystal, applied in the temperature conduction test circuit board, comprising:

[0012] A power supply circuit for power supply;

[0013] A control circuit including a master control chip, the master control chip being connected to the power supply circuit;

[0014] A heating circuit connected to the master control chip, the master control chip controlling the heating circuit to generate heat;

[0015] A power amplification circuit connected to the heating circuit, the power amplification circuit being used for amplifying the current of the heating circuit;

[0016] A crystal test circuit for testing the temperature change of a thermosensitive crystal device.

[0017] Optionally, the control circuit further comprises a first adjustable resistor, an eighth resistor, a ninth resistor, a tenth resistor and a second triode, the first adjustable resistor is connected with the first pin of the master control chip and the power supply circuit respectively, the eighth resistor is connected with the third pin of the master control chip, the ninth resistor and the tenth resistor are both connected with the fourth pin of the master control chip, the base of the second triode is connected with the sixth pin of the master control chip, the collector of the second triode is connected with the power amplifier circuit, and the emitter of the second triode is connected with the heat generating circuit.

[0018] Optionally, the test circuit is composed of a plurality of packages, the first pin and the second pin of the package are connected with an external power supply end, the third pin of the package is connected with an external first test end, the fourth pin of the package is connected with an external second test end, and the third pin and the fourth pin of the package are both grounded.

[0019] Optionally, the power supply circuit comprises a voltage stabilizing chip, the input pin of the voltage stabilizing chip is connected with a power supply end, and the output pin of the voltage stabilizing chip is connected with the master control chip to output a 5V voltage.

[0020] The device and the circuit for verifying the temperature change characteristic of the TSX thermosensitive crystal provided by the embodiment of the present application have at least one of the following technical effects:

[0021] The present application uses the first thermistor arranged in the sealed cavity to replace the wafer in the TSX thermosensitive crystal base on the market, so that the thermosensitive crystal device has the first thermistor arranged in the sealed cavity and the second thermistor arranged at the bottom of the base, the first thermistor simulates the temperature change of the wafer in the TSX thermosensitive crystal on the market under the influence of the external temperature under the heat conduction of the temperature conduction test circuit board, the voltage across the first thermistor is measured by the external voltage test equipment, the resistance value of the first thermistor is calculated through the voltage across the two ends, so as to obtain the first temperature change value, the second thermistor simulates the temperature change of the TSX thermosensitive crystal on the market in the use process, and the voltage across the second thermistor is measured by the external voltage test equipment, the resistance value of the second thermistor is calculated through the voltage across the two ends, so as to obtain the second temperature change value, the reasonable temperature compensation coefficient is obtained by combining the first temperature change value and the second temperature change value, the real temperature change of the thermosensitive crystal device is obtained, the phenomenon of temperature drift of the TSX thermosensitive crystal in the frequency output is prevented, the quality of the TSX thermosensitive crystal is ensured, the yield of the product is improved, and the use experience of the user is improved. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 A structural schematic diagram of a heat-sensitive crystal device provided by an embodiment of the present application;

[0023] Figure 2 A perspective view of the heat-sensitive crystal device provided by the embodiment of the present application; Figure 1

[0024] Figure 3 A bottom view of the heat-sensitive crystal device provided by the embodiment of the present application;

[0025] Figure 4 A structural schematic diagram of a temperature conduction test circuit board provided by the embodiment of the present application;

[0026] Figure 5 A circuit schematic diagram of the temperature conduction test circuit board provided by the embodiment of the present application;

[0027] Figure 6 Another circuit schematic diagram of the temperature conduction test circuit board provided by the embodiment of the present application.

[0028] In the drawings, various reference numerals refer to:

[0029] 1, heat-sensitive crystal device; 11, device base; 111, device mounting groove;

[0030] 112, base upper cover; 113, sealed cavity; 114, first solder pad;

[0031] 115, second solder pad; 116, third solder pad; 117, fourth solder pad;

[0032] 12, first thermistor; 13, second thermistor; 14, conductive silver adhesive;

[0033] 2, temperature conduction test circuit board; 21, power supply module; 22, control module;

[0034] 23, heating module; 24, power amplification module; 25, crystal test module;

[0035] 251, first test module; 252, second test module; 253, third test module;

[0036] 254, fourth test module; 255, fifth test module; 3, power supply circuit;

[0037] 4, control circuit; 5, heating circuit; 6, power amplification circuit;

[0038] 7, crystal test circuit. DETAILED DESCRIPTION

[0039] ​Embodiments of the present application are described below in detail with reference to the accompanying drawings, wherein the same or similar components are denoted by the same or similar reference numerals throughout the drawings. The embodiments described below are exemplary and are intended to explain the embodiments of the present application, and should not be understood as limiting the present application.

[0040] In the description of the embodiments of the present application, it should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the embodiments of the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0041] In addition, the terms "first", "second" are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly specified and limited.

[0042] In the embodiments of the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection", "fixing" and the like should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0043] In one embodiment of the present application, as shown in Figures 1 to 6 A device for verifying the temperature rising characteristics of a TSX thermosensitive crystal is provided, which comprises a thermosensitive crystal device 1 and a temperature conduction test circuit board 2 connected to each other. The thermosensitive crystal device 1 comprises a device base 11, a first thermistor 12 and a second thermistor 13. The device base 11 is provided with a device mounting groove 111, and a base upper cover 112 is fixed to the top end of the base to form a closed cavity 113. The first thermistor 12 is fixed to the device mounting groove 111, and the first thermistor 12 is accommodated in the closed cavity 113. The second thermistor 13 is fixedly attached to the bottom of the device base 11.

[0044] The application uses the first thermistor 12 arranged in the sealed cavity 113 instead of the wafer in the TSX thermosensitive crystal base on the market, so that the thermosensitive crystal device 1 has the first thermistor 12 arranged in the sealed cavity 113 and the second thermistor 13 arranged at the bottom of the base. Under the heat conduction of the temperature conduction test circuit board 2, the first thermistor 12 simulates the temperature change of the wafer in the TSX thermosensitive crystal on the market under the influence of the external temperature, the voltage between the two ends of the first thermistor 12 is measured by the external voltage test equipment, and the resistance value of the first thermistor 12 is calculated by the voltage between the two ends, so as to obtain the first temperature change value. The second thermistor 13 simulates the temperature change of the TSX thermosensitive crystal on the market in the use process, and the voltage between the two ends of the second thermistor 13 is measured by the external voltage test equipment, and the resistance value of the second thermistor 13 is calculated by the voltage between the two ends, so as to obtain the second temperature change value. The first temperature change value and the second temperature change value are combined to verify the temperature rise characteristics of the wafer in the TSX thermosensitive crystal and the thermistor, obtain a reasonable temperature compensation coefficient, obtain the real temperature change of the thermosensitive crystal device 1, prevent the temperature drift phenomenon of the TSX thermosensitive crystal in the frequency output, ensure the quality of the TSX thermosensitive crystal, improve the yield of the product, and improve the user experience. In the embodiment, the external voltage test equipment can be a resistance meter or an electronic multimeter.

[0045] Specifically, in another embodiment of the application, as shown in Figures 1 to 3 The first thermistor 12 is fixed to the device mounting groove 111 by the conductive silver glue 14, and the second thermistor 13 is fixed to the bottom of the device base 11 by the conductive silver glue 14. In the production process, if there is a difference in the manufacturing materials of the TSX thermosensitive crystal device base 11 and the conductive silver glue 14, the temperature rise characteristics of the first thermistor 12 and the second thermistor 13 will be different.

[0046] Specifically, in another embodiment of the application, as shown in Figures 1 to 3 The bottom of the device base 11 is respectively provided with a first pad 114, a second pad 115, a third pad 116 and a fourth pad 117. One end of the first thermistor 12 is connected with the first pad 114 through a wire, the other end of the first thermistor 12 is connected with the third pad 116 through a wire, one end of the second thermistor 13 is connected with the second pad 115 through a wire, and the other end of the second thermistor 13 is connected with the fourth pad 117 through a wire. The first thermistor 12 and the second thermistor 13 are diagonally connected. Further, the first thermistor 12 and the second thermistor 13 have the same material specification. In the embodiment, the wire is gold wire.

[0047] Specifically, in another embodiment of the application, as shown inFigures 1 to 4 As shown in the figure, the temperature conduction test circuit board 2 is provided with a power supply module 21, a control module 22, a heating module 23, a power amplification module 24 and a crystal test module 25. The power supply module 21, the control module 22, the power amplification module 24 and the heating module 23 are arranged on the upper side of the temperature conduction test circuit board 2 from left to right, and the crystal test module 25 is arranged on the lower side of the temperature conduction test circuit board 2. Further, the crystal test module 25 includes a first test module 251, a second test module 252, a third test module 253, a fourth test module 254 and a fifth test module 255, which are sequentially arranged on the lower side of the temperature conduction test circuit board 2 from left to right. By arranging the heating module 23 on the upper side of the temperature conduction test circuit board 2 and the crystal test module 25 on the lower side of the temperature conduction test circuit board 2, the heat of the heating module 23 can be effectively transferred to the crystal test module 25, and the temperature change of the crystal test module 25 can be efficiently controlled. There is a gap between the first test module 251, the second test module 252, the third test module 253, the fourth test module 254 and the fifth test module 255, so that the heat transfer between each test module is different.

[0048] The application also provides a circuit for verifying the temperature rising characteristics of the TSX heat-sensitive crystal, which is applied to the temperature conduction test circuit board 2 and includes a power supply circuit 3, a control circuit 4, a heating circuit 5, a power amplification circuit 6 and a crystal test circuit 7. The power supply circuit 3 is used for power supply; the control circuit 4 includes a main control chip U2, which is connected with the power supply circuit 3; the heating circuit 5 is connected with the main control chip U2, and the main control chip U2 controls the heating circuit 5 to generate heat; the power amplification circuit 6 is connected with the heating circuit 5, and is used for amplifying the current of the heating circuit 5; and the crystal test circuit 7 is used for testing the temperature change of the heat-sensitive crystal device 1. The main control chip U2 outputs a controllable PWM signal to the power amplification circuit 6, and the power amplification circuit 6 amplifies the PWM signal, so as to meet the required power of the heating circuit 5, and the size of the PWM signal is changed to change the heat generated by the heating circuit 5, so that the heat is transferred to the crystal test circuit 7.

[0049] Specifically, in another embodiment of the application, as shown in the figure, Figures 1 to 6 The power supply circuit 3 includes a voltage stabilizing chip U1, the input pin of which is connected with the power supply end VH+, and the output pin of which is connected with the main control chip U2, outputting a 5V voltage.

[0050] Specifically, in another embodiment of the application, as shown in the figure, Figures 1 to 6As shown, the control circuit 4 further comprises a first adjustable resistor VR1, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10 and a second triode Q2. The first adjustable resistor VR1 is connected with the first pin of the main control chip U2 and the power supply circuit 3 respectively, so that the voltage output by the voltage stabilizing chip U1 is input to the main control chip U2 through the first adjustable resistor VR1, and the voltage input to the main control chip U2 is changed by adjusting the resistance value of the first adjustable resistor VR1; the eighth resistor R8 is connected with the third pin of the main control chip U2, and the ninth resistor R9 and the tenth resistor R10 are both connected with the fourth pin of the main control chip U2, so that the frequency of the PWM signal output can be controlled by changing the combination of the eighth resistor R8, the ninth resistor R9 and the tenth resistor R10. The base of the second triode Q2 is connected with the sixth pin of the main control chip U2, and the controllable PWM signal output by the main control chip U2 is input to the second triode Q2, the collector of the second triode Q2 is connected with the power amplification circuit 6, and the emitter of the second triode Q2 is connected with the heating circuit 5.

[0051] Specifically, in another embodiment of the present application, as shown in Figures 1 to 6 As shown, the test circuit is composed of several packages, which are used to be connected with the thermosensitive crystal device 1, the first pin and the second pin of the package are connected with the external power supply end, the third pin of the package is connected with the external first test end, the fourth pin of the package is connected with the external second test end, and the third pin and the fourth pin of the package are both grounded. In this embodiment, the first thermosensitive resistor 12 is connected with the first pad 114 and the third pad 116 respectively, and the second thermosensitive resistor 13 is connected with the second pad 115 and the fourth pad 117 respectively, when the thermosensitive crystal device 1 is connected with the package, the first thermosensitive resistor 12 is connected with the first pin and the third pin of the package in correspondence, and the second thermosensitive resistor 13 is connected with the second pin and the fourth pin of the package in correspondence. By connecting the positive pole of the external test voltage device with the third pin of the package and the negative pole with the common ground, the voltage of the first thermosensitive resistor 12 can be read, the resistance value of the first thermosensitive resistor 12 is calculated by the voltage, and the current temperature is calculated by the resistance value of the first thermosensitive resistor 12. Similarly, the current temperature can be calculated by connecting the positive pole of the external test device with the second pin of the package and the resistance value of the second thermosensitive resistor 13.

[0052] Specifically, in another embodiment of the present application, as shown in Figures 1 to 6As shown, the power amplification circuit 6 comprises an eleventh resistor R11 and a first MOS tube Q1, the drain of the first MOS tube Q1 is connected with the power supply terminal, the gate of the first MOS tube Q1 is connected with the collector of a second triode Q2, and the source of the first MOS tube Q1 is connected with the heat dissipation circuit. One end of the eleventh resistor R11 is connected with the gate of the first MOS tube Q1, and the other end of the eleventh resistor R11 is connected with the drain of the first MOS tube Q1. The eleventh resistor R11 prevents abnormal working state and false triggering, and protects the circuit. Since the signal of the second triode Q2 is a small signal, and the power required by the heat dissipation circuit 5 is large, the first MOS tube Q1 is needed between the two, the first MOS tube Q1 receives the switching signal of the second triode Q2, amplifies the current of the heat dissipation circuit 5, and thus amplifies the power of the heat dissipation circuit.

[0053] Specifically, in another embodiment of the present application, as shown in Figures 1 to 6 As shown, the heat dissipation circuit 5 comprises a heat dissipation resistor PR1, one end of the heat dissipation resistor PR1 is connected with the source of the first MOS tube Q1, and the other end of the heat dissipation resistor PR1 is grounded. The heat dissipation resistor PR1 is a high-power resistor, and heat is generated by consuming electric energy through the heat dissipation resistor PR1. The heat generation rate of the heat dissipation resistor PR1 can be adjusted by controlling the duty cycle and frequency of PWM through the master control chip U2.

[0054] The above is only the preferred embodiment of the present application, but the protection scope of the present application is not limited to this. Any person skilled in the art can make equivalent replacement or change according to the technical solution and the inventive concept of the present application within the technical range disclosed by the present application, which should be covered in the protection scope of the present application.

Claims

1. A device for verifying the TSX thermosensitive crystal temperature characteristic, characterized in that, The application relates to a temperature conduction test circuit board comprising mutually connected thermosensitive crystal devices and temperature conduction test circuit boards, wherein the thermosensitive crystal devices comprise a device base, a first thermosensitive resistor and a second thermosensitive resistor, the device base is provided with a device mounting groove, a base upper cover is fixed to the top end of the base to form a closed cavity, the first thermosensitive resistor is fixed to the device mounting groove, the first thermosensitive resistor is accommodated in the closed cavity, and the second thermosensitive resistor is fixedly arranged on the bottom of the device base; the first thermosensitive resistor is fixed to the device mounting groove through conductive silver glue, and the second thermosensitive resistor is fixed to the bottom of the device base through conductive silver glue; the bottom of the device base is respectively provided with a first pad, a second pad, a third pad and a fourth pad, one end of the first thermosensitive resistor is connected with the first pad through a wire, the other end of the first thermosensitive resistor is connected with the third pad through a wire, one end of the second thermosensitive resistor is connected with the second pad through a wire, and the other end of the second thermosensitive resistor is connected with the fourth pad through a wire; the first thermosensitive resistor and the second thermosensitive resistor are connected in a diagonal mode; the first thermosensitive resistor is used for simulating the temperature change of a wafer in a TSX thermosensitive crystal on the market under the influence of external temperature, the voltage between the two ends of the first thermosensitive resistor is measured through an external voltage test device, the resistance value of the first thermosensitive resistor is calculated through the voltage between the two ends, thereby obtaining a first temperature change value; the second thermosensitive resistor is used for simulating the temperature change of a TSX thermosensitive crystal on the market in a use process, the voltage between the two ends of the second thermosensitive resistor is measured through an external voltage test device, the resistance value of the second thermosensitive resistor is calculated through the voltage between the two ends, thereby obtaining a second temperature change value; a reasonable temperature compensation coefficient is obtained by combining the first temperature change value and the second temperature change value, and the real temperature change of the thermosensitive crystal device is obtained.

2. A device for verifying the temperature sensitivity of a TSX thermosensitive crystal according to claim 1, characterized in that, The material specifications of the first thermosensitive resistor and the second thermosensitive resistor are the same.

3. A device for verifying the temperature sensitivity of a TSX crystal according to claim 1, wherein, The temperature conduction test circuit board is provided with a power supply module, a control module, a heating module, a power amplification module and a crystal test module, the power supply module, the control module, the power amplification module and the heating module are arranged on the upper side of the temperature conduction test circuit board from left to right, and the crystal test module is arranged on the lower side of the temperature conduction test circuit board.

4. A device for verifying the temperature sensitivity of a TSX crystal according to claim 3, wherein, The crystal test module comprises a first test module, a second test module, a third test module, a fourth test module and a fifth test module, and the first test module, the second test module, the third test module, the fourth test module and the fifth test module are sequentially arranged on the lower side of the temperature conduction test circuit board from left to right.

5. A circuit for verifying the temperature sensitive crystal (TSX) heating characteristics, applied in the temperature conduction test circuit board as claimed in any one of claims 1-4, characterized in that, The application relates to a temperature conduction test circuit board comprising mutually connected thermosensitive crystal devices and temperature conduction test circuit boards, wherein the thermosensitive crystal devices comprise a device base, a first thermosensitive resistor and a second thermosensitive resistor, the device base is provided with a device mounting groove, a base upper cover is fixed to the top end of the base to form a closed cavity, the first thermosensitive resistor is fixed to the device mounting groove, the first thermosensitive resistor is accommodated in the closed cavity, and the second thermosensitive resistor is fixedly arranged on the bottom of the device base; the first thermosensitive resistor is fixed to the device mounting groove through conductive silver glue, and the second thermosensitive resistor is fixed to the bottom of the device base through conductive silver glue; the bottom of the device base is respectively provided with a first pad, a second pad, a third pad and a fourth pad, one end of the first thermosensitive resistor is connected with the first pad through a wire, the other end of the first thermosensitive resistor is connected with the third pad through a wire, one end of the second thermosensitive resistor is connected with the second pad through a wire, and the other end of the second thermosensitive resistor is connected with the fourth pad through a wire; the first thermosensitive resistor and the second thermosensitive resistor are connected in a diagonal mode; the first thermosensitive resistor is used for simulating the temperature change of a wafer in a TSX thermosensitive crystal on the market under the influence of external temperature, the voltage between the two ends of the first thermosensitive resistor is measured through an external voltage test device, the resistance value of the first thermosensitive resistor is calculated through the voltage between the two ends, thereby obtaining a first temperature change value; the second thermosensitive resistor is used for simulating the temperature change of a TSX thermosensitive crystal on the market in a use process, the voltage between the two ends of the second thermosensitive resistor is measured through an external voltage test device, the resistance value of the second thermosensitive resistor is calculated through the voltage between the two ends, thereby obtaining a second temperature change value; a reasonable temperature compensation coefficient is obtained by combining the first temperature change value and the second temperature change value, and the real temperature change of the thermosensitive crystal device is obtained. The material specifications of the first thermosensitive resistor and the second thermosensitive resistor are the same. The temperature conduction test circuit board is provided with a power supply module, a control module, a heating module, a power amplification module and a crystal test module, the power supply module, the control module, the power amplification module and the heating module are arranged on the upper side of the temperature conduction test circuit board from left to right, and the crystal test module is arranged on the lower side of the temperature conduction test circuit board. The crystal test module comprises a first test module, a second test module, a third test module, a fourth test module and a fifth test module, and the first test module, the second test module, the third test module, the fourth test module and the fifth test module are sequentially arranged on the lower side of the temperature conduction test circuit board from left to right. The application relates to a temperature conduction test circuit board comprising mutually connected thermosensitive crystal devices and temperature conduction test circuit boards, wherein the thermosensitive crystal devices comprise a device base, a first thermosensitive resistor and a second thermosensitive resistor, the device base is provided with a device mounting groove, a base upper cover is fixed to the top end of the base to form a closed cavity, the first thermosensitive resistor is fixed to the device mounting groove, the first thermosensitive resistor is accommodated in the closed cavity, and the second thermosensitive resistor is fixedly arranged on the bottom of the device base; the first thermosensitive resistor is fixed to the device mounting groove through conductive silver glue, and the second thermosensitive resistor is fixed to the bottom of the device base through conductive silver glue; the bottom of the device base is respectively provided with a first pad, a second pad, a third pad and a fourth pad, one end of the first thermosensitive resistor is connected with the first pad through a wire, the other end of the first thermosensitive resistor is connected with the third pad through a wire, one end of the second thermosensitive resistor is connected with the second pad through a wire, and the other end of the second thermosensitive resistor is connected with the fourth pad through a wire; the first thermosensitive resistor and the second thermosensitive resistor are connected in a diagonal mode; the first thermosensitive resistor is used for simulating the temperature change of a wafer in a TSX thermosensitive crystal on the market under the influence of external temperature, the voltage between the two ends of the first thermosensitive resistor is measured through an external voltage test device, the resistance value of the first thermosensitive resistor is calculated through the voltage between the two ends, thereby obtaining a first temperature change value; the second thermosensitive resistor is used for simulating the temperature change of a TSX thermosensitive crystal on the market in a use process, the voltage between the two ends of the second thermosensitive resistor is measured through an external voltage test device, the resistance value of the second thermosensitive resistor is calculated through the voltage between the two ends, thereby obtaining a second temperature change value; a reasonable temperature compensation coefficient is obtained by combining the first temperature change value and the second temperature change value, and the real temperature change of the thermosensitive crystal device is obtained. A crystal test circuit is used to test the temperature change of a heat-sensitive crystal device.

6. A circuit for verifying the temperature characteristics of a TSX thermosensitive crystal according to claim 5, characterized in that, The control circuit further comprises a first adjustable resistor, an eighth resistor, a ninth resistor, a tenth resistor and a second triode, the first adjustable resistor is connected with the first pin of the main control chip and the power supply circuit respectively, the eighth resistor is connected with the third pin of the main control chip, the ninth resistor and the tenth resistor are both connected with the fourth pin of the main control chip, the base of the second triode is connected with the sixth pin of the main control chip, the collector of the second triode is connected with the power amplifier circuit, and the emitter of the second triode is connected with the heating circuit.

7. A circuit for verifying the temperature characteristics of a TSX thermosensitive crystal according to claim 6, characterized in that, The test circuit is composed of several packages, the packages are used to be connected with heat-sensitive crystal devices, the first pin and the second pin of the package are connected with external power supply terminals, the third pin of the package is connected with an external first test terminal, the fourth pin of the package is connected with an external second test terminal, and the third pin and the fourth pin of the package are both grounded.

8. The circuit for verifying the TSX thermosensitive crystal temperature characteristic according to claim 7, characterized in that, The power supply circuit comprises a voltage stabilizing chip, the input pin of the voltage stabilizing chip is connected with a power supply terminal, the output pin of the voltage stabilizing chip is connected with the main control chip, and an output 5V voltage is output.

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