Wafer exposure management method, device, electronic equipment and system
By using the overlay error difference value to transmit the overlay error value in the lithography machine, the problem of waste of production capacity caused by the difference in the workpiece stages of the lithography machine is solved, the efficient utilization of all workpiece stages is achieved, and the production efficiency of the lithography machine is improved.
Patent Information
- Application Number
- CN202211726592.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-12-30
- Publication Date
- 2025-10-14
- Estimated Expiration
- 2042-12-30
AI Technical Summary
In the prior art, the overlay error caused by the difference between the workpiece stages of the lithography machine leads to the alignment deviation of the lithography pattern, resulting in a waste of the lithography machine's production capacity.
By determining the overlay error difference between each workpiece stage in the target lithography machine and sending the overlay error lower value via wireless or wired transmission, other workpiece stages can also participate in the exposure of the current exposure layer, thereby improving the lithography machine's production capacity.
This ensures that all worktables participate in exposure, improves the production capacity of the lithography machine, and avoids the waste of production capacity caused by the use of fixed worktables.
Smart Images
Figure CN116009364B_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductors, and in particular to a wafer exposure management method, device, electronic equipment and system. Background Art
[0002] With the advancement of semiconductor technology nodes, the requirements for the overlay error of the photolithography layer are becoming more and more stringent. The overlay error caused by the difference between the worktables of the photolithography machine is a factor that causes the alignment deviation between the exposure pattern and the reference layer pattern. At present, in order to solve the alignment deviation caused by the difference between the worktables of the photolithography machine, exposure is performed using a fixed worktable. That is, the control system records the worktable (chuck) information of the wafer operation. When exposing the current layer, each wafer is fixed to the same worktable of the same photolithography machine as the reference layer according to the recorded worktable information of the reference layer operation, and the exposure is performed using the overlay error (OVL) value of the fixed worktable (chuck by chuck) to reduce the overlay error. Since there are two worktables on a photolithography machine, all wafers are sent to a fixed worktable for exposure one by one, and the other worktables are idle, resulting in a waste of photolithography machine production capacity.
[0003] Therefore, how to solve the above technical problems should be the focus of those skilled in the art. Summary of the Invention
[0004] The purpose of this application is to provide a wafer exposure management method, device, electronic equipment and system to improve the production capacity of a lithography machine.
[0005] To solve the above technical problems, the present application provides a wafer exposure management method, comprising:
[0006] The target lithography machine is used as the lithography machine used when exposing the current exposure layer of the wafer; the target lithography machine is the lithography machine used when exposing the reference layer of the wafer;
[0007] Determining a target workpiece stage and other workpiece stages in the target lithography machine; the target workpiece stage is the workpiece stage in the target lithography machine used when exposing the reference layer;
[0008] Determine a current lower overlay error value corresponding to the other workpiece stage in the target lithography machine and the current exposure layer according to an overlay error difference between the other workpiece stage in the target lithography machine and the target workpiece stage;
[0009] The current overlay error value is sent to the target lithography machine so that other worktables in the target lithography machine can expose the current exposure layer.
[0010] Optionally, before the target lithography machine is used as the lithography machine for exposing the current exposure layer of the wafer, the method further includes:
[0011] Acquire identification information of the target lithography machine and the target workpiece stage corresponding to the exposure of the reference layer.
[0012] Optionally, before determining the overlay error difference between the other workpiece stages in the target lithography machine and the target workpiece stage, the method further includes:
[0013] Determine an overlay error difference between the overlay error values of the other workpiece stages in the target lithography machine and the overlay error value of the target workpiece stage.
[0014] Optionally, determining the overlay error difference between the overlay error value of the other workpiece stages in the target lithography machine and the overlay error value of the target workpiece stage includes:
[0015] The overlay error difference value is determined according to a preset formula, and the preset formula is:
[0016] OVL bias =OVL n -OVL m ,
[0017] Among them, OVL bias is the overlay error difference value, OVL m OVL is the optimal overlay error value for the target workpiece stage to expose the preselected wafer. n It is the lower value of the optimal overlay error for the other workpiece stages in the target lithography machine to expose the preselected wafer.
[0018] Optionally, sending the current overlay error value to the target lithography machine includes:
[0019] The current overlay error value is sent to the target lithography machine via wireless transmission.
[0020] The present application also provides a wafer exposure management method, comprising:
[0021] The target lithography machine is used as the lithography machine used when exposing the current exposure layer of the wafer; the target lithography machine is the lithography machine used when exposing the reference layer of the wafer;
[0022] Determining a target workpiece stage and other workpiece stages in the target lithography machine and an idle state of the target lithography machine; the target workpiece stage is a workpiece stage in the target lithography machine used when exposing the reference layer;
[0023] If the target workpiece stage is in an idle state, a target overlay error value corresponding to the target workpiece stage is sent to the target lithography machine so that the target workpiece stage exposes the current exposure layer;
[0024] If the target worktable is not in an idle state, the current overlay error lower value corresponding to the other worktables in the target photolithography machine and the current exposure layer is determined according to the overlay error difference value between the other worktables in the target photolithography machine and the target worktable; the current overlay error lower value is sent to the target photolithography machine so that the other worktables in the target photolithography machine can expose the current exposure layer.
[0025] The present application also provides a wafer exposure management device, comprising:
[0026] A first determining module is configured to use a target lithography machine as the lithography machine used when exposing the current exposure layer of the wafer; the target lithography machine is the lithography machine used when exposing the reference layer of the wafer;
[0027] A second determining module is configured to determine a target workpiece stage and other workpiece stages in the target lithography machine; the target workpiece stage is the workpiece stage in the target lithography machine used when the reference layer is exposed;
[0028] A third determining module is configured to determine a current lower overlay error value corresponding to the other workpiece stage in the target lithography machine and the current exposure layer according to an overlay error difference between the other workpiece stage in the target lithography machine and the target workpiece stage;
[0029] The first sending module is used to send the current overlay error value to the target lithography machine so that other worktables in the target lithography machine can expose the current exposure layer.
[0030] Optionally, also include:
[0031] The acquisition module is used to acquire identification information of the target lithography machine and the target workpiece stage corresponding to the exposure of the reference layer.
[0032] The present application also provides an electronic device, comprising:
[0033] memory for storing computer programs;
[0034] A processor is used to implement the steps of any of the above-mentioned wafer exposure management methods when executing the computer program.
[0035] The present application also provides a wafer exposure management system, comprising:
[0036] The electronic device described above,
[0037] A photolithography machine connected to the electronic device.
[0038] A wafer exposure management method provided in the present application includes: using a target photolithography machine as the photolithography machine used to expose the current exposure layer of the wafer; the target photolithography machine is the photolithography machine used to expose the reference layer of the wafer; determining the target worktable and other worktables in the target photolithography machine; the target worktable is the worktable in the target photolithography machine used to expose the reference layer; according to the overlay error difference value between the other worktables in the target photolithography machine and the target worktable, determining the current overlay error value corresponding to the other worktables in the target photolithography machine and the current exposure layer; sending the current overlay error value to the target photolithography machine so that the other worktables in the target photolithography machine can expose the current exposure layer.
[0039] It can be seen that in this application, the photolithography machine used for exposing the current exposure layer of the wafer is determined as the target photolithography machine used for exposing the reference layer, and the workpiece stage used for exposing the current exposure layer is not fixed, and can be either the target workpiece stage or other workpiece stages in the target photolithography machine. The difference between the values under the overlay error between each workpiece stage in the same target photolithography machine is fixed. By using the overlay error difference value and the value under the overlay error of the target workpiece stage, the current value under the overlay error for exposing the current exposure layer using other workpiece stages in the target photolithography machine can be determined, so that the effect of exposing the current exposure layer by other workpiece stages in the target photolithography machine is the same as the effect of exposing the current exposure layer by the target workpiece stage. Therefore, the method of this application can enable all workpiece stages in the target photolithography machine to participate in the exposure, thereby improving the production capacity of the photolithography machine.
[0040] In addition, the present application also provides a device, electronic device and system having the above advantages. BRIEF DESCRIPTION OF THE DRAWINGS
[0041] In order to more clearly illustrate the embodiments of the present application or the technical solutions of the prior art, the following is a brief introduction to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.
[0042] Figure 1 A flowchart of a wafer exposure management method provided in an embodiment of the present application;
[0043] Figure 2 A flowchart of another wafer exposure management method provided in an embodiment of the present application;
[0044] Figure 3A schematic diagram of the overlay error value used when exposing the current exposure layer using different workpiece stages of the same lithography machine provided in an embodiment of the present application;
[0045] Figure 4 A structural block diagram of a wafer exposure management device provided in an embodiment of the present application;
[0046] Figure 5 A structural block diagram of an electronic device provided in an embodiment of the present application;
[0047] Figure 6 This is a structural block diagram of a wafer exposure management system provided in an embodiment of the present application. DETAILED DESCRIPTION
[0048] In order to enable those skilled in the art to better understand the present application, the present application is further described in detail below in conjunction with the accompanying drawings and specific embodiments. Obviously, the embodiments described are only a part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making any creative efforts are within the scope of protection of the present application.
[0049] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.
[0050] As mentioned in the Background section, alignment errors caused by differences between lithography machine worktables are currently addressed by using fixed worktables for exposure. Since a lithography machine has two worktables, all wafers are fed to a single fixed worktable for exposure, leaving the other worktables idle and resulting in wasted lithography machine production capacity.
[0051] In view of this, this application provides a wafer exposure management method, please refer to Figure 1 ,include:
[0052] Step S101: using a target lithography machine as the lithography machine used for exposing the current exposure layer of the wafer; the target lithography machine is the lithography machine used for exposing the reference layer of the wafer.
[0053] The wafer has many layers. During the design phase, a reference layer is determined based on process requirements. The selection of the reference layer can be referenced in related technologies and will not be detailed here.
[0054] There are many photolithography machines in the factory. Each photolithography machine has at least two workpiece stages. The photolithography machine used to expose the reference layer is called a target photolithography machine, and the workpiece stage used to expose the reference layer is called a target workpiece stage.
[0055] Optionally, before the target lithography machine is used as the lithography machine for exposing the current exposure layer of the wafer, the method further includes:
[0056] Acquire identification information of the target lithography machine and the target workpiece stage corresponding to the exposure of the reference layer.
[0057] The identification information of the lithography machine corresponds one-to-one to the lithography machine, and the identification information of the workpiece stage corresponds one-to-one to the workpiece stage. Therefore, the target lithography machine and the target workpiece stage can be determined through the identification information.
[0058] Step S102: determining a target workpiece stage and other workpiece stages in the target lithography machine; the target workpiece stage is the workpiece stage in the target lithography machine used when exposing the reference layer.
[0059] Assume there are two photolithography machines, A and B, each with two workpiece stages, 1 and 2. Assume that the reference layer is exposed using workpiece stage 1 in photolithography machine A. Then, photolithography machine A is the target photolithography machine, workpiece stage 1 in photolithography machine A is the target workpiece stage, and workpiece stage 2 in photolithography machine A is the other workpiece stage.
[0060] The current exposure layer can be exposed using either the target stage or other stages in the target lithography machine. For example, if the target stage is currently in operation, the current exposure layer can be exposed using other stages in the target lithography machine without waiting for the target stage.
[0061] Each stage has an associated overlay error threshold during exposure. Generally, different stages have different overlay error thresholds, but the difference in overlay error between two stages in the same lithography machine is constant. For example, the overlay error threshold for stage 1 can be recorded as OVL1, and the overlay error threshold for stage 2 can be recorded as OVL2.
[0062] Step S103: determining a current lower overlay error value corresponding to the other workpiece stage in the target lithography machine and the current exposure layer according to the overlay error difference between the other workpiece stage in the target lithography machine and the target workpiece stage.
[0063] Optionally, before determining the overlay error difference between the other workpiece stages in the target lithography machine and the target workpiece stage, the method further includes:
[0064] Determine an overlay error difference between the overlay error values of the other workpiece stages in the target lithography machine and the overlay error value of the target workpiece stage.
[0065] It should be noted that the present application does not limit the method for determining the overlay error difference value, and the method can be selected at will.
[0066] As an implementation method, determining the overlay error difference between the overlay error value of the other workpiece stages in the target lithography machine and the overlay error value of the target workpiece stage includes:
[0067] The overlay error difference value is determined according to a preset formula, and the preset formula is:
[0068] OVL bias =OVL n -OVL m (1)
[0069] Among them, OVL bias is the overlay error difference value, OVL m OVL is the optimal overlay error value for the target workpiece stage to expose the preselected wafer. n The optimal overlay error value for the exposure of the pre-selected wafer by the other workpiece stages in the target lithography machine is obtained. The pre-selected wafer can be any wafer selected to obtain the OVL m and OVL n The pre-selected wafer used is the same wafer.
[0070] As an implementation method, determining the overlay error difference between the overlay error value of the other workpiece stages in the target lithography machine and the overlay error value of the target workpiece stage includes:
[0071] The overlay error difference value is determined according to formula (2), which is:
[0072] OVL bias =OVL m -OVL n (2)
[0073] Among them, OVL bias is the overlay error difference value, OVL m OVL is the optimal overlay error value for the target workpiece stage to expose the preselected wafer. n It is the lower value of the optimal overlay error for the other workpiece stages in the target lithography machine to expose the preselected wafer.
[0074] The method for determining the cargo value under the current overlay error corresponding to other workpiece stages in the target lithography machine and the current exposure layer is determined according to the method for determining the overlay error difference value.
[0075] For example, when the reference layer is exposed using the target stage in the target lithography machine, and the current exposure layer is exposed using other stages in the target lithography machine, when the overlay error difference value is determined using formula (1), the current overlay error of other stages in the target lithography machine to the current exposure layer is OVL m1 +OVL bias When formula (2) is used to determine the overlay error difference value, the current overlay error of the current exposure layer of other workpiece stages in the target lithography machine is OVL m1 -OVL bias Among them, OVL m1 It is the lower value of the target overlay error when the current exposure layer is exposed on the target workpiece stage.
[0076] Step S104: sending the current overlay error value to the target lithography machine so that other worktables in the target lithography machine can expose the current exposure layer.
[0077] It can be understood that when the workpiece stage used for the current exposure layer is the target workpiece stage, exposure can be performed directly using the workpiece stage with the target overlay error.
[0078] In this embodiment, the photolithography machine used for exposing the current exposure layer of the wafer is determined as the target photolithography machine used for exposing the reference layer. The workpiece stage used for exposing the current exposure layer is not fixed, and can be either the target workpiece stage or other workpiece stages in the target photolithography machine. The difference between the values under the overlay error between the workpiece stages in the same target photolithography machine is fixed. By using the overlay error difference value and the value under the overlay error of the target workpiece stage, the current value under the overlay error for exposing the current exposure layer using other workpiece stages in the target photolithography machine can be determined, so that the effect of exposing the current exposure layer by other workpiece stages in the target photolithography machine is the same as the effect of exposing the current exposure layer by the target workpiece stage. Therefore, the method of the present application can enable all workpiece stages in the target photolithography machine to participate in the exposure, thereby improving the production capacity of the photolithography machine.
[0079] Based on the above embodiment, in one embodiment of the present application, sending the current overlay error value to the target lithography machine includes:
[0080] The current overlay error value is sent to the target lithography machine via wireless transmission.
[0081] Wireless transmission methods include but are not limited to Bluetooth, WiFi, 4G, and 5G.
[0082] Based on the above embodiment, in one embodiment of the present application, sending the current overlay error value to the target lithography machine includes:
[0083] The current overlay error value is sent to the target lithography machine via wired transmission.
[0084] Wired transmission methods include, but are not limited to, USB (universal serial bus), serial port, and Ethernet.
[0085] Based on the above embodiments, in one embodiment of the present application, please refer to Figure 2 , wafer exposure management methods include:
[0086] Step S201: using a target lithography machine as the lithography machine used for exposing the current exposure layer of the wafer; the target lithography machine is the lithography machine used for exposing the reference layer of the wafer.
[0087] Step S202: determining a target workpiece stage and other workpiece stages in the target lithography machine as well as an idle state of the target workpiece stage; the target workpiece stage is a workpiece stage in the target lithography machine used when the reference layer is exposed.
[0088] Step S203: If the target work stage is in an idle state, a target overlay error value corresponding to the target work stage is sent to the target lithography machine so that the target work stage exposes the current exposure layer.
[0089] The target overlay error lower value is the overlay error lower value used when the current exposure layer is exposed on the target workpiece stage.
[0090] Step S204: If the target worktable is not in an idle state, the current overlay error value corresponding to the other worktables in the target lithography machine and the current exposure layer is determined according to the overlay error difference between the other worktables in the target lithography machine and the target worktable.
[0091] Step S205: sending the current overlay error value to the target lithography machine so that other worktables in the target lithography machine can expose the current exposure layer.
[0092] Please refer to Figure 3 , take the target lithography machine with two workpiece stages as an example, when the reference layer is exposed using workpiece stage 1, if the current exposure layer is also exposed using workpiece stage 1, then the target overlay error value OVL1 of workpiece stage 1 (target workpiece stage) is directly used for exposure; if the current exposure layer is exposed using workpiece stage 2, then the current overlay error value OVL1+OVL is used. biasWhen the reference layer is exposed using stage 2, if the current exposure layer is also exposed using stage 2, then the target overlay error value OVL2 of stage 2 (target stage) is directly used for exposure. If the current exposure layer is exposed using stage 1, then the current overlay error value OVL2-OVL is used. bias Make an exposure.
[0093] The following is an introduction to the wafer exposure management device provided by the embodiment of the present invention. The wafer exposure management device described below and the wafer exposure management method described above can be referred to in correspondence with each other. Figure 4 , Figure 4 This is a structural block diagram of a wafer exposure management device provided in an embodiment of the present application, the device comprising:
[0094] The first determination module 100 is configured to use a target lithography machine as the lithography machine used when exposing the current exposure layer of the wafer; the target lithography machine is the lithography machine used when exposing the reference layer of the wafer;
[0095] The second determining module 200 is used to determine a target workpiece stage and other workpiece stages in the target lithography machine; the target workpiece stage is the workpiece stage in the target lithography machine used when the reference layer is exposed;
[0096] A third determining module 300 is configured to determine a current lower overlay error value corresponding to the other workpiece stage in the target lithography machine and the current exposure layer according to an overlay error difference between the other workpiece stage in the target lithography machine and the target workpiece stage;
[0097] The first sending module 400 is used to send the current overlay error value to the target lithography machine so that other worktables in the target lithography machine can expose the current exposure layer.
[0098] The wafer exposure management device of this embodiment is used to implement the aforementioned wafer exposure management method. Therefore, the specific implementation methods of the wafer exposure management device can be seen in the embodiment part of the wafer exposure management method in the previous text. For example, the first determination module 100, the second determination module 200, the third determination module 300, and the sending module 400 are respectively used to implement steps S101, S102, S103 and S104 in the above-mentioned wafer exposure management method. Therefore, its specific implementation methods can refer to the descriptions of the corresponding embodiments of each part and will not be repeated here.
[0099] Optionally, the wafer exposure management device further includes:
[0100] The acquisition module is used to acquire identification information of the target lithography machine and the target workpiece stage corresponding to the exposure of the reference layer.
[0101] Optionally, the wafer exposure management device further includes:
[0102] The fourth determining module is used to determine an overlay error difference between the overlay error values of the other workpiece stages in the target lithography machine and the overlay error value of the target workpiece stage.
[0103] Optionally, the fourth determining module is specifically configured to determine the overlay error difference value according to a preset formula, where the preset formula is:
[0104] OVL bias =OVL n -OVL m (1)
[0105] Among them, OVL bias is the overlay error difference value, OVL m OVL is the optimal overlay error value for the target workpiece stage to expose the preselected wafer. n It is the lower value of the optimal overlay error for the other workpiece stages in the target lithography machine to expose the preselected wafer.
[0106] Optionally, the fourth determining module is specifically configured to determine the overlay error difference value according to formula (2), where formula (2) is:
[0107] OVL bias =OVL m -OVL n (2)
[0108] Among them, OVL bias is the overlay error difference value, OVL m OVL is the optimal overlay error value for the target workpiece stage to expose the preselected wafer. n It is the lower value of the optimal overlay error for the other workpiece stages in the target lithography machine to expose the preselected wafer.
[0109] Optionally, the sending module is specifically used to send the current overlay error value to the target lithography machine via wireless transmission.
[0110] Optionally, the sending module is specifically used to send the current overlay error value to the target lithography machine via wired transmission.
[0111] The present application also provides a wafer exposure management device, including a first determination module 100, a second determination module 200, a third determination module 300 and a first sending module 400, wherein the second determination module 200 is used to determine the target worktable and other worktables in the target lithography machine and the idle state of the target worktable; the target worktable is the worktable in the target lithography machine used when exposing the reference layer; accordingly, if the target worktable is in an idle state, the second sending module is triggered, and the second sending module is used to send the target overlay error value corresponding to the target worktable to the target lithography machine, so that the target worktable exposes the current exposure layer; if the target worktable is in an idle state, the third determination module 300 and the first sending module 400 are triggered.
[0112] The electronic device provided by the embodiment of the present invention is introduced below. The electronic device described below and the wafer exposure management method described above can be referred to in correspondence with each other. Figure 5 , Figure 5 A structural block diagram of an electronic device provided in an embodiment of the present application includes:
[0113] Memory 11, for storing computer programs;
[0114] The processor 12 is configured to implement the steps of the wafer exposure management method described in any one of the above embodiments when executing the computer program.
[0115] Please refer to Figure 6 , the present application also provides a wafer exposure management system, including:
[0116] The electronic device 1 described in the above embodiment,
[0117] A photolithography machine 2 connected to the electronic device 1.
[0118] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from the other embodiments. Reference can be made to the descriptions of the identical or similar parts between the various embodiments. For the devices disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the descriptions are relatively simple, and the relevant parts can be referred to the descriptions of the methods.
[0119] Professionals may further appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of the two. In order to clearly illustrate the interchangeability of hardware and software, the above description has generally described the components and steps of each example according to their functions. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professionals and technicians may use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of the present invention.
[0120] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be implemented directly using hardware, a software module executed by a processor, or a combination of the two. The software module may be placed in a random access memory, a memory, a read-only memory, an electrically programmable read-only memory, an electrically erasable programmable read-only memory, a register, a hard disk, a removable disk, or any other form of storage medium known in the art.
[0121] The above is a detailed introduction to the wafer exposure management method, device, electronic device and system provided by the present application. This article uses specific examples to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of the present application, several improvements and modifications can be made to the present application, and these improvements and modifications also fall within the scope of protection of the claims of the present application.
Claims
1. A wafer exposure management method, characterized in that: include: The target lithography machine is used as the lithography machine for exposing the current exposure layer of the wafer; The target lithography machine is the lithography machine used when exposing the wafer reference layer; Determining a target workpiece stage and other workpiece stages in the target lithography machine; The target workpiece stage is a workpiece stage in the target photolithography machine used when exposing the reference layer; Determine a current lower overlay error value corresponding to the other workpiece stage in the target lithography machine and the current exposure layer according to an overlay error difference between the other workpiece stage in the target lithography machine and the target workpiece stage; The current overlay error value is sent to the target lithography machine so that other worktables in the target lithography machine can expose the current exposure layer.
2. The wafer exposure management method according to claim 1, wherein: Before the target lithography machine is used as the lithography machine for exposing the current exposure layer of the wafer, it also includes: Acquire identification information of the target lithography machine and the target workpiece stage corresponding to the exposure of the reference layer.
3. The wafer exposure management method according to claim 1, wherein: Before determining the overlay error difference between the other workpiece stages in the target lithography machine and the target workpiece stage, the method further includes: Determine an overlay error difference between the overlay error values of the other workpiece stages in the target lithography machine and the overlay error value of the target workpiece stage.
4. The wafer exposure management method according to claim 3, wherein: Determining the overlay error difference between the overlay error value of the other workpiece stages in the target lithography machine and the overlay error value of the target workpiece stage includes: The overlay error difference value is determined according to a preset formula, and the preset formula is: OVL bias =OVL n -OVL m , Among them, OVL bias is the overlay error difference value, OVL m OVL is the optimal overlay error value for the target workpiece stage to expose the preselected wafer. n It is the lower value of the optimal overlay error for the other workpiece stages in the target lithography machine to expose the preselected wafer.
5. The wafer exposure management method according to claim 1, wherein: Sending the current overlay error value to the target lithography machine includes: The current overlay error value is sent to the target lithography machine via wireless transmission.
6. A wafer exposure management method, characterized in that include: The target lithography machine is used as the lithography machine for exposing the current exposure layer of the wafer; The target lithography machine is the lithography machine used when exposing the wafer reference layer; Determining the idle state of a target workpiece stage and other workpiece stages in the target lithography machine and the target lithography machine; The target workpiece stage is a workpiece stage in the target photolithography machine used when exposing the reference layer; If the target workpiece stage is in an idle state, a target overlay error value corresponding to the target workpiece stage is sent to the target lithography machine so that the target workpiece stage exposes the current exposure layer; If the target worktable is not in an idle state, the current overlay error lower value corresponding to the other worktables in the target photolithography machine and the current exposure layer is determined according to the overlay error difference value between the other worktables in the target photolithography machine and the target worktable; the current overlay error lower value is sent to the target photolithography machine so that the other worktables in the target photolithography machine can expose the current exposure layer.
7. A wafer exposure management device, characterized in that: include: A first determining module is configured to use a target lithography machine as the lithography machine used for exposing the current exposure layer of the wafer; The target lithography machine is the lithography machine used when exposing the wafer reference layer; A second determining module is used to determine a target workpiece stage and other workpiece stages in the target lithography machine; The target workpiece stage is a workpiece stage in the target photolithography machine used when exposing the reference layer; A third determining module is configured to determine a current lower overlay error value corresponding to the other workpiece stage in the target lithography machine and the current exposure layer according to an overlay error difference between the other workpiece stage in the target lithography machine and the target workpiece stage; The first sending module is used to send the current overlay error value to the target lithography machine so that other worktables in the target lithography machine can expose the current exposure layer.
8. The wafer exposure management device according to claim 7, wherein: Also includes: The acquisition module is used to acquire identification information of the target lithography machine and the target workpiece stage corresponding to the exposure of the reference layer.
9. An electronic device, characterized in that: include: memory for storing computer programs; A processor, configured to implement the steps of the wafer exposure management method according to any one of claims 1 to 5 and claim 6 when executing the computer program.
10. A wafer exposure management system, characterized in that: include: The electronic device according to claim 9, A photolithography machine connected to the electronic device.
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