High frequency module and communication device

Abstract

A high-frequency module (1A) comprises a module substrate (91) having a main surface (91a), a first circuit component and a second circuit component arranged on the main surface (91a), and a metal shielding plate (70) arranged on the main surface (91a) and set to a ground potential. The metal shielding plate (70) comprises a shielding portion (71) extending in a direction perpendicular to the main surface (91a), and a bonding portion (74) extending from the shielding portion (71) parallel to the main surface (91a) and separated from the main surface (91a). The top surface of at least one of the first circuit component and the second circuit component and the bonding portion (74) are connected by a bonding wire (81). When the module substrate (91) is viewed from above, the metal shielding plate (70) is arranged between the first circuit component and the second circuit component.

Description

Technical Field

[0001] The present invention relates to a high-frequency module and a communication device. Background Art

[0002] In mobile communication devices such as cellular phones, the arrangement structure of circuit elements constituting high-frequency front-end circuits has become increasingly complex, particularly with the advancement of multi-band communication.

[0003] Patent Document 1 discloses a circuit structure for a transceiver (transmitting and receiving circuit) comprising multiple transmitters (transmitting paths) and multiple receivers (receiving paths), and a switchplexer (antenna switch) disposed between the multiple transmitters and receivers and an antenna. Each of the multiple transmitters includes a transmitting circuit, a PA (transmitting power amplifier), and an output circuit, while each of the multiple receivers includes a receiving circuit, an LNA (receiving low-noise amplifier), and an input circuit. The output circuit includes a transmitting filter, an impedance matching circuit, and a duplexer, while the input circuit includes a receiving filter, an impedance matching circuit, and a duplexer. This structure enables simultaneous transmission, simultaneous reception, or simultaneous transmission and reception through the switching operation of the switchplexer.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application No. 2014-522216 Summary of the Invention

[0007] Technical problem to be solved by the invention

[0008] However, when the transceiver (transceiver circuit) disclosed in Patent Document 1 is composed of a high-frequency module mounted on a mobile communication device, it is conceivable that at least two circuit components respectively arranged in the transmission path, the reception path, and the transmission and reception path including the antenna switch will be coupled by electromagnetic fields. In this case, the harmonic components of the high-output transmission signal amplified by the PA (transmit power amplifier) ​​overlap with the transmission signal, sometimes reducing the quality of the transmission signal. In addition, the isolation between the transmitter and receiver is reduced due to the above-mentioned electromagnetic field coupling, and sometimes the above-mentioned harmonics, or unwanted waves such as intermodulation distortion between the transmission signal and other high-frequency signals, flow into the reception path, thereby degrading the reception sensitivity. In addition, the two received signals interfere with each other due to the above-mentioned electromagnetic field coupling, sometimes degrading the reception sensitivity. Furthermore, if multiple of the above-mentioned circuit components are arranged on the surface of the module substrate, there are problems such as the layout area of ​​the electrodes of each circuit component becomes larger, and it is impossible to miniaturize the module substrate.

[0009] The present invention has been made to solve the above-mentioned technical problems, and an object of the present invention is to provide a compact high-frequency module and a communication device in which degradation in the quality of a transmission signal or a reception signal is suppressed.

[0010] Technical solutions to technical problems

[0011] One embodiment of the present invention relates to a high-frequency module comprising a module substrate having a main surface, a first circuit component and a second circuit component arranged on the main surface, and a metal plate arranged on the main surface and set to a ground potential, the metal plate having a main body portion extending in a direction perpendicular to the main surface, and a first bonding portion extending from the main body portion parallel to the main surface and separated from the main surface, the top surface of at least one of the first circuit component and the second circuit component and the first bonding portion being connected by a bonding wire, and the metal plate being arranged between the first circuit component and the second circuit component when the module substrate is viewed from above.

[0012] Effects of the Invention

[0013] According to the present invention, it is possible to provide a compact high-frequency module and a communication device in which degradation in the quality of a transmission signal or a reception signal is suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a circuit configuration diagram of a high-frequency module and a communication device according to an embodiment.

[0015] Figure 2 1 and 2 are a plan view and a cross-sectional view of a high-frequency module according to an embodiment.

[0016] Figure 3A This is a perspective view showing the appearance of a first example of a metal shield plate.

[0017] Figure 3B This is a perspective view showing the appearance of a second example of a metal shield plate.

[0018] Figure 3C This is a perspective view showing the appearance of a third example of the metal shield plate.

[0019] Figure 4 It is a cross-sectional view showing a modified example of the via-hole conductor. DETAILED DESCRIPTION

[0020] Hereinafter, the embodiments of the present invention will be described in detail. In addition, the embodiments described below show general or specific examples. In addition, the numerical values, shapes, materials, components, configurations of components, and connection methods shown in the following embodiments, examples, and modifications are examples, and their purpose is not to limit the present invention. In addition, among the components in the following embodiments and modifications, the components that are not described in the independent claims are described as arbitrary components. In addition, the sizes or size ratios of the components shown in the drawings are not necessarily rigorous. In the figures, the same figure marks are marked for substantially the same structures, and repeated descriptions are sometimes omitted or simplified.

[0021] In the following, terms such as parallel and perpendicular that indicate the relationship between elements, terms such as rectangular that indicate the shape of an element, and numerical ranges do not have strict meanings but mean substantially equivalent ranges, for example, including differences of several percent.

[0022] In the following figures, the x-axis and y-axis are mutually orthogonal axes on a plane parallel to the main surface of the module substrate. Furthermore, the z-axis is an axis perpendicular to the main surface of the module substrate, with its positive direction indicating upward and its negative direction indicating downward.

[0023] In the circuit structure of the present disclosure, the term "connected" includes not only direct connection via connection terminals and / or wiring conductors, but also electrical connection via other circuit components. Furthermore, the term "connected between A and B" means connection between A and B and both A and B.

[0024] In addition, in the module structure disclosed in the present invention, the so-called "looking down" means observing the object by orthographic projection from the positive side of the z-axis to the xy plane. The so-called "components are arranged on the main surface of the substrate", in addition to the components being arranged on the main surface in a state of contact with the main surface of the substrate, also includes the components being arranged above the main surface without contact with the main surface, and the components being arranged by embedding a part of the component into the substrate from the main surface side. The so-called "A is arranged between B and C" means that at least one of the multiple line segments connecting an arbitrary point in B and an arbitrary point in C passes through A. In addition, terms such as "parallel" and "perpendicular" that indicate the relationship between elements, and terms such as "rectangular" that indicate the shape of an element do not only have strict meanings, but also mean a substantially equivalent range, for example, including an error of several percent.

[0025] In the following, the term "transmit path" refers to a transmission line consisting of wiring that transmits high-frequency transmit signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes. Furthermore, the term "receive path" refers to a transmission line consisting of wiring that transmits high-frequency receive signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes. Furthermore, the term "transmit / receive path" refers to a transmission line consisting of wiring that transmits both high-frequency transmit and receive signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes.

[0026] (Implementation Method)

[0027] [1. Circuit Configuration of High-Frequency Module 1 and Communication Device 5]

[0028] Figure 1 1 is a circuit diagram of a high-frequency module 1 and a communication device 5 according to an embodiment. As shown in the figure, the communication device 5 includes a high-frequency module 1, an antenna 2, an RF signal processing circuit (RFIC) 3, and a baseband signal processing circuit (BBIC) 4.

[0029] RFIC3 is an RF signal processing circuit that processes high-frequency signals transmitted and received by antenna 2. Specifically, RFIC3 processes high-frequency receive signals input via the receive signal path of high-frequency module 1 through down-conversion and other methods, and outputs the resulting receive signals to BBIC4. RFIC3 also processes transmit signals input from BBIC4 through up-conversion and other methods, and outputs the resulting high-frequency transmit signals to the transmit signal path of high-frequency module 1.

[0030] BBIC 4 is a circuit that performs signal processing using an intermediate frequency band lower than the high-frequency signal propagating through high-frequency module 1. The signal processed by BBIC 4 is used as an image signal for image display or as an audio signal for communication via a speaker.

[0031] RFIC3 also functions as a control unit that controls the connection of switches 40, 41, and 42 of high-frequency module 1 based on the communication frequency band being used. Specifically, RFIC3 switches the connection of switches 40 to 42 of high-frequency module 1 based on a control signal (not shown). Specifically, RFIC3 outputs a digital control signal for controlling switches 40 to 42 to PA control circuit 15. PA control circuit 15 of high-frequency module 1 outputs a digital control signal to switches 40 to 42 based on the digital control signal input from RFIC3, thereby controlling the connection and disconnection of switches 40 to 42.

[0032] RFIC3 also functions as a control unit that controls the gain of the power amplifier 10 included in the high-frequency module 1, as well as the power supply voltage Vcc and bias voltage Vbias supplied to the power amplifier 10. Specifically, RFIC3 outputs a digital control signal to the control signal terminal 130 of the high-frequency module 1. Based on the digital control signal input via the control signal terminal 130, the PA control circuit 15 outputs a control signal, power supply voltage Vcc, or bias voltage Vbias to the power amplifier 10, thereby adjusting the gain of the power amplifier 10. Alternatively, the control unit may be provided external to RFIC3, for example, within BBIC4.

[0033] The antenna 2 is connected to the antenna connection terminal 100 of the high-frequency module 1 , radiates a high-frequency signal output from the high-frequency module 1 , and receives a high-frequency signal from the outside and outputs the signal to the high-frequency module 1 .

[0034] In addition, in the communication device 5 according to this embodiment, the antenna 2 and the BBIC 4 are not essential components.

[0035] Next, the detailed structure of the high-frequency module 1 will be described.

[0036] like Figure 1 As shown, the high-frequency module 1 includes a power amplifier 10, a low-noise amplifier 20, a PA control circuit 15, transmit filters 31 and 33, receive filters 32 and 34, matching circuits 50, 51, 52, 53, and 54, switches 40, 41, and 42, an antenna connection terminal 100, a transmit input terminal 110, a receive output terminal 120, and a control signal terminal 130.

[0037] Antenna connection terminal 100 is connected to antenna 2. Transmission input terminal 110 is a terminal for receiving a transmission signal from outside (RFIC 3) of high frequency module 1. Reception output terminal 120 is a terminal for supplying a reception signal to outside (RFIC 3) of high frequency module 1.

[0038] The power amplifier 10 is a transmission amplifier that amplifies transmission signals in the communication bands A and B. An input terminal of the power amplifier 10 is connected to the transmission input terminal 110 , and an output terminal of the power amplifier 10 is connected to matching circuits 51 and 53 via a switch 41 .

[0039] The low noise amplifier 20 is a receiving amplifier that amplifies, with low noise, received signals in the communication bands A and B. The input terminal of the low noise amplifier 20 is connected to the matching circuits 52 and 54 via the switch 42 , and the output terminal of the low noise amplifier 20 is connected to the reception output terminal 120 .

[0040] The PA control circuit 15 adjusts the gain of the power amplifier 10 based on a digital control signal MIPI input via the control signal terminal 130 . Alternatively, the PA control circuit 15 may be formed by a semiconductor IC (Integrated Circuit). For example, the semiconductor IC is formed by a CMOS (Complementary Metal Oxide Semiconductor). Specifically, it is formed using an SOI (Silicon On Insulator) process. This allows for inexpensive manufacturing of the semiconductor IC. Alternatively, the semiconductor IC may be formed from at least one of GaAs, SiGe, and GaN. This allows for the output of high-frequency signals with high-quality amplification and noise performance.

[0041] The transmission filter 31 is arranged in the transmission path AT connecting the power amplifier 10 and the switch 40, and passes the transmission signal in the transmission band of the communication frequency band A among the transmission signals amplified by the power amplifier 10. Furthermore, the transmission filter 33 is arranged in the transmission path BT connecting the power amplifier 10 and the switch 40, and passes the transmission signal in the transmission band of the communication frequency band B among the transmission signals amplified by the power amplifier 10.

[0042] The receive filter 32 is arranged in the receive path AR connecting the low-noise amplifier 20 and the switch 40, and passes received signals in the receive band of the communication frequency band A among the received signals input from the antenna connection terminal 100. Furthermore, the receive filter 34 is arranged in the receive path BR connecting the low-noise amplifier 20 and the switch 40, and passes received signals in the receive band of the communication frequency band B among the received signals input from the antenna connection terminal 100.

[0043] The transmission filters 31 and 33 and the reception filters 32 and 34 may be, for example, surface acoustic wave filters, elastic wave filters using BAW (Bulk Acoustic Wave), LC resonant filters, and dielectric filters, but are not limited thereto.

[0044] The transmission filter 31 and the reception filter 32 constitute a duplexer 30 having a passband in the communication band A. The transmission filter 33 and the reception filter 34 constitute a duplexer 35 having a passband in the communication band B.

[0045] Furthermore, the duplexers 30 and 35 may each be a filter that performs transmission in a time division duplex (TDD) system. In this case, a switch that switches between transmission and reception is provided at least in the preceding stage or the following stage of the filter.

[0046] Matching circuit 50 is located in the transceiver path CTR connecting antenna connection terminal 100 and switch 40, achieving impedance matching between antenna 2, switch 40, and duplexers 30 and 35. Matching circuit 50 includes at least one inductor. Matching circuit 50 can be located in series with the transceiver path CTR or connected between the transceiver path CTR and ground.

[0047] Matching circuit 51 is disposed in transmission path AT connecting power amplifier 10 and transmission filter 31, achieving impedance matching between power amplifier 10 and transmission filter 31. Matching circuit 51 includes at least one inductor. Matching circuit 51 can be disposed in series with transmission path AT or connected between transmission path AT and ground.

[0048] Matching circuit 53 is disposed in transmission path BT connecting power amplifier 10 and transmission filter 33, achieving impedance matching between power amplifier 10 and transmission filter 33. Matching circuit 53 includes at least one inductor. Matching circuit 53 can be disposed in series with transmission path BT or connected between transmission path BT and ground.

[0049] Matching circuit 52 is disposed in the receive path AR connecting the low-noise amplifier 20 and the receive filter 32, achieving impedance matching between the low-noise amplifier 20 and the receive filter 32. Matching circuit 52 includes at least one inductor. Matching circuit 52 can be disposed in series with the receive path AR or connected between the receive path AR and ground.

[0050] Matching circuit 54 is disposed in receive path BR connecting low-noise amplifier 20 and receive filter 34, achieving impedance matching between low-noise amplifier 20 and receive filter 34. Matching circuit 54 includes at least one inductor. Matching circuit 54 can be disposed in series with receive path BR or connected between receive path BR and ground.

[0051] Alternatively, a matching circuit may be provided in the transmission path between the power amplifier 10 and the switch 41 instead of or in addition to the matching circuits 51 and 53 .

[0052] The switch 40 includes a common terminal 40a, and selection terminals 40b and 40c. The common terminal 40a is connected to the antenna connection terminal 100 via the matching circuit 50, the selection terminal 40b is connected to the duplexer 30, and the selection terminal 40c is connected to the duplexer 35. Specifically, the switch 40 is an antenna switch disposed between the antenna connection terminal 100 and the duplexers 30 and 35, and switches between (1) connection and disconnection between the antenna connection terminal 100 and the duplexer 30, and (2) connection and disconnection between the antenna connection terminal 100 and the duplexer 35. Furthermore, the switch 40 is configured as a multi-connection type switch circuit capable of simultaneously performing the aforementioned connections (1) and (2).

[0053] Alternatively, a matching circuit may be provided in the reception path between the low-noise amplifier 20 and the switch 42 instead of or in addition to the matching circuits 52 and 54 .

[0054] Furthermore, instead of or in addition to the matching circuit 50 , matching circuits may be provided in the transmission / reception path connecting the switch 40 and the duplexer 30 and the transmission / reception path connecting the switch 40 and the duplexer 35 .

[0055] Switch 41 includes a common terminal 41a and select terminals 41b and 41c. It is arranged in a transmission path connecting power amplifier 10 and transmit filters 31 and 33, and switches between the connection between power amplifier 10 and transmit filter 31, and between power amplifier 10 and transmit filter 33. For example, switch 41 is configured as an SPDT (Single Pole Double Throw) type switch circuit, in which common terminal 41a is connected to the output terminal of power amplifier 10, select terminal 41b is connected to transmit filter 31 via matching circuit 51, and select terminal 41c is connected to transmit filter 33 via matching circuit 53.

[0056] Switch 42 includes a common terminal 42a and select terminals 42b and 42c. Switch 42 is disposed in a reception path connecting low-noise amplifier 20 and receive filters 32 and 34, and switches between the connection between low-noise amplifier 20 and receive filter 32, and between low-noise amplifier 20 and receive filter 34. For example, switch 42 is formed of an SPDT-type switch circuit in which common terminal 42a is connected to an input terminal of low-noise amplifier 20, select terminal 42b is connected to receive filter 32 via matching circuit 52, and select terminal 42c is connected to receive filter 34 via matching circuit 54.

[0057] Furthermore, the transmission path AT is a signal path that transmits a transmission signal in communication band A and connects the transmission input terminal 110 to the common terminal 40a of the switch 40. Furthermore, the transmission path BT is a signal path that transmits a transmission signal in communication band B and connects the transmission input terminal 110 to the common terminal 40a of the switch 40. Furthermore, the reception path AR is a signal path that transmits a reception signal in communication band A and connects the reception output terminal 120 to the common terminal 40a of the switch 40. Furthermore, the reception path BR is a signal path that transmits a reception signal in communication band B and connects the reception output terminal 120 to the common terminal 40a of the switch 40. Furthermore, the transceiver path CTR is a signal path that transmits transmission and reception signals in communication band A and transmission and reception signals in communication band B and connects the antenna connection terminal 100 to the common terminal 40a of the switch 40.

[0058] In the high-frequency module 1 having the above-described circuit configuration, the power amplifier 10, the switch 41, the matching circuit 51, and the transmit filter 31 constitute a first transmit circuit that outputs a transmit signal in communication frequency band A toward the antenna connection terminal 100. Furthermore, the power amplifier 10, the switch 41, the matching circuit 53, and the transmit filter 33 constitute a second transmit circuit that outputs a transmit signal in communication frequency band B toward the antenna connection terminal 100.

[0059] The low-noise amplifier 20, the switch 42, the matching circuit 52, and the reception filter 32 constitute a first reception circuit into which a reception signal in communication band A is input from the antenna 2 via the antenna connection terminal 100. Furthermore, the low-noise amplifier 20, the switch 42, the matching circuit 54, and the reception filter 34 constitute a second reception circuit into which a reception signal in communication band B is input from the antenna 2 via the antenna connection terminal 100.

[0060] According to the above-mentioned circuit structure, the high-frequency module 1 involved in this embodiment is capable of performing at least any one of (1) transmission and reception of high-frequency signals in communication frequency band A, (2) transmission and reception of high-frequency signals in communication frequency band B, and (3) simultaneous transmission, simultaneous reception, or simultaneous transmission and reception of high-frequency signals in communication frequency band A and high-frequency signals in communication frequency band B.

[0061] Furthermore, in the high-frequency module according to the present invention, the transmitting circuit and the receiving circuit may be connected to the antenna connection terminal 100 without passing through the switch 40. Alternatively, the transmitting circuit and the receiving circuit may be connected to the antenna 2 via separate terminals. Furthermore, the circuit configuration of the high-frequency module according to the present invention only requires a transmitting path, a receiving path, or at least two of the transmitting and receiving paths, and matching circuits disposed in each of the two paths. Furthermore, the module only requires either a first transmitting circuit or a second transmitting circuit. Furthermore, the module only requires either a first receiving circuit or a second receiving circuit.

[0062] In a high-frequency module 1 having the above-described circuit structure, if electromagnetic field coupling occurs between at least two circuit components arranged in the transmit path, receive path, and transmit / receive path, the harmonic components of the high-output transmit signal amplified by the power amplifier may overlap with the transmit signal, potentially degrading the transmit signal quality. Furthermore, this electromagnetic field coupling reduces the isolation between the transmitter and receiver, and unwanted waves such as the harmonics or intermodulation distortion between the transmit signal and other high-frequency signals may flow into the receive path, degrading receive sensitivity. Furthermore, this electromagnetic field coupling may cause mutual interference between the two receive signals, potentially degrading receive sensitivity. Furthermore, if multiple of these circuit components are arranged on the surface of the module substrate, the layout area for the electrodes of each circuit component becomes larger, preventing miniaturization of the module substrate.

[0063] In contrast, the high-frequency module 1 according to the present embodiment has a compact structure while suppressing the above-mentioned electromagnetic field coupling.

[0064] [2. Circuit Component Arrangement Structure of High-Frequency Module 1A According to the Embodiment]

[0065] Figure 2 1A and 1B are a plan view and a cross-sectional view of a high-frequency module 1A according to an embodiment. Figure 2 (a) shows the arrangement of the circuit components when the main surface 91a of the module substrate 91 is viewed from the positive z-axis direction side. Figure 2 (b) shows Figure 2 The high-frequency module 1A is a cross-sectional view taken along the line II-II of FIG.

[0066] like Figure 2 As shown, the high-frequency module 1A of this embodiment has Figure 1In addition to the circuit structure shown, the module substrate 91 , the metal shield plate 70 , the metal shield layer 95 , the via conductor 96 , the resin member 92 , and the external connection terminal 150 are further provided.

[0067] Module substrate 91 is a substrate on which the first and second transmitting circuits and the first and second receiving circuits are mounted on its main surface 91a. For example, a low-temperature co-fired ceramic (LTCC) substrate, a high-temperature co-fired ceramic (HTCC) substrate with a laminated structure of multiple dielectric layers, a component-embedded substrate, a substrate with a redistribution layer (RDL), or a printed circuit board can be used as module substrate 91. Antenna connection terminals 100, transmitting input terminals 110, receiving output terminals 120, and control signal terminals 130 may also be formed on module substrate 91.

[0068] The resin component 92 is arranged on the main surface 91a of the module substrate 91, covering at least a portion of the circuit components constituting the first and second transmitting circuits and the first and second receiving circuits, and the main surface 91a of the module substrate 91, and has the function of ensuring the reliability of the above-mentioned circuit components, such as mechanical strength and moisture resistance.

[0069] The external connection terminals 150 are arranged on the main surface 91b of the module substrate 91. The high-frequency module 1A exchanges electrical signals with the external substrate arranged on the negative side of the z-axis of the high-frequency module 1A via the plurality of external connection terminals 150. In addition, the ground terminal 150g among the plurality of external connection terminals 150 is set to the ground potential of the external substrate. In addition, the external connection terminal 150 can be as follows Figure 2 The illustrated embodiment shows a planar electrode formed on the main surface 91 b , but a bump electrode formed on the main surface 91 b may also be used.

[0070] The metal shield layer 95 is an example of a metal layer, covers the surface of the resin member 92, and is set to the ground potential. The metal shield layer 95 is a metal thin film formed by sputtering, for example.

[0071] In addition, the high-frequency module 1A may not include the resin member 92 and the metal shield layer 95 .

[0072] Via-hole conductor 96 is formed within module substrate 91 and extends in a direction intersecting main surface 91a. Via-hole conductor 96 is set to the ground potential of high-frequency module 1A. In this embodiment, via-hole conductor 96 extends in a direction perpendicular to main surface 91a, penetrating module substrate 91.

[0073] The metal shield 70 is an example of a metal plate, is a metal wall body arranged on the main surface 91 a and extending from the main surface 91 a toward the top surface of the resin member 92 on the positive z-axis direction side, and is set to the ground potential.

[0074] Figure 3A This is a perspective view showing the appearance of a first example of a metal shield plate 70. The metal shield plate 70A shown in this figure is an example of the metal shield plate 70 involved in the embodiment. As shown in this figure, the metal shield plate 70A includes a shield portion 71 and joint portions 73 and 74. The shield portion 71 is an example of the main body of the metal shield plate 70A and extends in a direction perpendicular to the main surface 91a (the z-axis direction). The joint portion 74 is an example of a first joint portion and extends from the shield portion 71 parallel to and spaced apart from the main surface 91a. The joint portion 73 is an example of a second joint portion and extends from the shield portion 71 parallel to and in contact with the main surface 91a. Furthermore, a hole 72 is formed between the metal shield plate 70A and the main surface 91a, extending in the normal direction (the x-axis direction) of the shield portion 71. The upper end of the shield portion 71 does not contact the metal shield layer 95.

[0075] Bonding portion 74 has a bonding wire bonded to its surface and is not in contact with metal shield layer 95. Thus, by connecting the circuit components arranged on main surface 91a to bonding portion 74 using bonding wires, the ground electrode for setting the circuit components to ground potential can be located on bonding portion 74, eliminating the need to provide the ground electrode on main surface 91a. Consequently, the layout area of ​​the ground electrode on main surface 91a can be reduced, enabling miniaturization of module substrate 91.

[0076] The metal shield 70A and the main surface 91a are bonded together by the bonding portion 73, thereby improving the placement accuracy of the metal shield 70A and the bonding strength between the metal shield 70A and the main surface 91a. Furthermore, the formation of the holes 72 ensures good fluidity of the liquid resin near the metal shield 70A during the process of forming the resin member 92 on the main surface 91a. This prevents the formation of voids near the metal shield 70A where the resin member 92 is not formed.

[0077] The metal shield plate 70A necessarily includes the shield portion 71 and the joint portion 74, but may not include the joint portion 73. Furthermore, the hole 72 may not be formed in the metal shield plate 70A.

[0078] Figure 3BThis is a perspective view showing the appearance of a second example of a metal shield plate 70. The metal shield plate 70B shown in this figure is an example of the metal shield plate 70 according to the embodiment. As shown in this figure, the metal shield plate 70B includes a shield portion 71B and joint portions 73 and 74. The shield portion 71B is an example of the main body of the metal shield plate 70B and extends in a direction perpendicular to the main surface 91a (the z-axis direction). The joint portion 74 is an example of a first joint portion and extends from the shield portion 71B, parallel to the main surface 91a and spaced apart from the main surface 91a. The joint portion 73 is an example of a second joint portion and extends from the shield portion 71B, parallel to the main surface 91a and in contact with the main surface 91a. The upper end of the shield portion 71B is in contact with the metal shield layer 95. Furthermore, a hole 72 is formed between the metal shield plate 70B and the metal shield layer 95, extending in the normal direction (the x-axis direction) of the shield portion 71B.

[0079] Bonding portion 74 has a bonding wire bonded to its surface and is not in contact with metal shield layer 95. Thus, by connecting the circuit components arranged on main surface 91a to bonding portion 74 using bonding wires, the ground electrode for setting the circuit components to ground potential can be located on bonding portion 74, eliminating the need to provide the ground electrode on main surface 91a. Consequently, the layout area of ​​the ground electrode on main surface 91a can be reduced, enabling miniaturization of module substrate 91.

[0080] The metal shield plate 70B and the main surface 91a are bonded together by the bonding portion 73, thereby improving the placement accuracy of the metal shield plate 70B and the bonding strength between the metal shield plate 70B and the main surface 91a. Furthermore, the formation of the holes 72 ensures good fluidity of the liquid resin near the metal shield plate 70B during the process of forming the resin member 92 on the main surface 91a. This prevents the formation of voids near the metal shield plate 70B where the resin member 92 is not formed.

[0081] The metal shield plate 70B necessarily includes the shield portion 71B and the joint portion 74, but may not include the joint portion 73. Furthermore, the hole 72 may not be formed in the metal shield plate 70B.

[0082] Figure 3CThis is a perspective view of the appearance of a third example of a metal shield plate 70. The metal shield plate 70C shown in this figure is an example of a metal shield plate 70 according to an embodiment. As shown in this figure, the metal shield plate 70C includes a shield portion 71 and joint portions 73 and 74. The shield portion 71 is an example of the main body of the metal shield plate 70C and extends in a direction perpendicular to the main surface 91a (the z-axis direction). In the metal shield plate 70C, multiple shield portions 71 are discretely arranged with holes 72 interposed therebetween. Furthermore, multiple joint portions 73 are discretely arranged with holes 72 interposed therebetween. The joint portion 74 is an example of a first joint portion and extends from the shield portion 71 parallel to and spaced apart from the main surface 91a. The joint portion 73 is an example of a second joint portion and extends from the shield portion 71 parallel to and in contact with the main surface 91a. A hole 72 is formed between the main surface 91a and the metal shield layer 95, extending in the normal direction (the x-axis direction) of the shield portion 71.

[0083] Bonding portion 74 has a bonding wire bonded to its surface and is not in contact with metal shield layer 95. Thus, by connecting the circuit components arranged on main surface 91a to bonding portion 74 using bonding wires, the ground electrode for setting the circuit components to ground potential can be located on bonding portion 74, eliminating the need to provide the ground electrode on main surface 91a. Consequently, the layout area of ​​the ground electrode on main surface 91a can be reduced, enabling miniaturization of module substrate 91.

[0084] The metal shield plate 70C and the main surface 91a are bonded together by the bonding portion 73, thereby improving the placement accuracy of the metal shield plate 70C and the bonding strength between the metal shield plate 70C and the main surface 91a. Furthermore, the formation of the holes 72 ensures good fluidity of the liquid resin near the metal shield plate 70C during the step of forming the resin member 92 on the main surface 91a. This prevents the formation of voids near the metal shield plate 70C where the resin member 92 is not formed.

[0085] The metal shield plate 70C necessarily includes the shield portion 71 and the joint portion 74, but may not include the joint portion 73. Furthermore, the hole 72 may not be formed in the metal shield plate 70C.

[0086] In addition, the structure of the metal shield plate 70 of this embodiment is not limited to the metal shield plates 70A to 70C described above. For example, a plurality of holes 72 may be arranged from the main surface 91a toward the metal shield layer 95. In addition, the direction in which the joint portion 73 extends is not limited to the direction in which the joint portion 73 extends. Figures 3A to 3C The x-axis positive direction shown may be the x-axis negative direction. Furthermore, the metal shield plate 70 may include both the joint portion 73 extending in the x-axis positive direction and the joint portion 73 extending in the x-axis negative direction.

[0087] In addition, if Figure 2 As shown in (b), the metal shield plate 70 is connected to the via conductor 96 on the main surface 91a. In addition, the metal shield plate 70 and the via conductor 96 can be directly connected. Figure 2 As shown in (b), it is also possible to connect via the ground electrode 94g formed on the main surface 91a. Figure 2 Although not shown in the figure, the metal shielding plate 70 may also be connected to the metal shielding layer 95 at its upper end.

[0088] According to the above structure of the metal shielding plate 70 , the metal shielding plate 70 is connected to the ground at least at its lower end, thereby enhancing the electromagnetic field shielding function.

[0089] In addition, if Figure 2 As shown in (a) of FIG. 1 , the metal shielding plate 70 divides the main surface 91a into a region P and a region Q. Figure 2 As shown in (a), the power amplifier 10, matching circuits 51 and 53, and switch 41 are examples of first circuit components and are arranged in region P of the main surface 91a. Furthermore, the low-noise amplifier 20, duplexers 30 and 35, matching circuits 50, 52, and 54, and switches 40 and 42 are examples of second circuit components and are arranged in region Q of the main surface 91a. Matching circuit 51 is arranged in the transmission path AT connecting the transmission input terminal 110 and the common terminal 40a of the switch 40 and includes a first inductor. Furthermore, matching circuit 52 is arranged in the reception path AR connecting the reception output terminal 120 and the common terminal 40a of the switch 40 and includes a second inductor.

[0090] Furthermore, the low-noise amplifier 20 and the switch 42 are included in a single semiconductor IC 60 . This reduces the component mounting area on the main surface 91 a , thereby miniaturizing the high-frequency module 1A. Furthermore, the semiconductor IC 60 may include at least one of the switches 40 and 41 .

[0091] That is, the metal shield plate 70 is disposed on the main surface 91 a and is disposed between the first circuit component and the second circuit component in a plan view of the module substrate 91 .

[0092] In this embodiment, the first circuit component is a circuit component arranged in the transmission path AT or BT, and the second circuit component is a circuit component arranged in the reception path AR, BR, or the transceiver path CTR.

[0093] Alternatively, the first circuit component arranged in the region P may be a circuit component arranged in the reception path AR or BR, and the second circuit component arranged in the region Q may be a circuit component arranged in the transmission path AT, BT, or the transceiver path CTR.

[0094] Alternatively, the first circuit component arranged in the region P may be a circuit component arranged in the transmission / reception path CTR, and the second circuit component arranged in the region Q may be a circuit component arranged in the transmission path AT, BT, or the reception path AR or BR.

[0095] In addition, if Figure 2 As shown, the ground electrode 61 g disposed on the top surface of the semiconductor IC 60 and the bonding portion 74 of the metal shield plate 70 are connected by a bonding wire 81 .

[0096] The top surface of the semiconductor IC 60 refers to a main surface farther from the main surface 91 a (on the positive z-axis direction side) among the main surfaces of the semiconductor IC 60 that face each other.

[0097] According to the above structure, the placement of the metal shield plate 70 can suppress electromagnetic field coupling between the first and second circuit components. Therefore, strong signal interference between the first and second circuit components can be suppressed, thereby suppressing degradation of the quality of transmitted or received signals.

[0098] Furthermore, since the semiconductor IC 60 is connected to the bonding portion 74 via the bonding wires 81, the ground electrode of the semiconductor IC 60 need not be located on the main surface 91a. This reduces the layout area of ​​the electrodes provided on the main surface 91a, allowing the module substrate 91 to be miniaturized. Consequently, a compact high-frequency module 1A can be provided that minimizes degradation in the quality of transmitted and received signals.

[0099] The metal shield plate 70 is preferably thicker than the metal shield layer 95. This improves the ability to suppress high-frequency noise generated by circuit components of the high-frequency module 1A from flowing into other circuit components of the high-frequency module 1A rather than the ability to shield external noise.

[0100] Furthermore, the outer diameter of the via-hole conductor 96 is preferably greater than the thickness of the metal shield plate 70. If the outer diameter of the via-hole conductor 96 were smaller than the thickness of the metal shield plate 70, the potential of the metal shield plate 70 would not be strongly set to the ground potential of the high-frequency module 1A. In contrast, this configuration strengthens the grounding of the metal shield plate 70. Consequently, strong signal interference between two circuit components arranged across the metal shield plate 70 can be suppressed, thereby improving the isolation between the transmission path, the reception path, and the transmission / reception path, and accurately suppressing degradation in the quality of the transmitted or received signals.

[0101] Furthermore, the component connected to the bonding portion 74 via the bonding wire 81 is not limited to the semiconductor IC 60. A ground electrode disposed on the top surface of at least one of the first circuit component and the second circuit component may also be connected to the bonding portion 74 via the bonding wire 81. Furthermore, the circuit component connected to the bonding portion 74, of the first circuit component and the second circuit component, is preferably a surface-mount electronic component.

[0102] The top surface of the first circuit component is the principal surface of the first circuit component that is farther from the principal surface 91a (on the positive z-axis side) among the principal surfaces of the first circuit component that are opposed to each other. Furthermore, the top surface of the second circuit component is the principal surface of the second circuit component that is farther from the principal surface 91a (on the positive z-axis side) among the principal surfaces of the second circuit component that are opposed to each other.

[0103] Furthermore, in this embodiment, in particular, the first circuit component may be a first inductor, and the second circuit component may be a second inductor.

[0104] This can suppress electromagnetic field coupling between the first inductor and the second inductor, thereby preventing unnecessary waves such as the high-output transmission signal amplified by the power amplifier, its harmonics, or intermodulation distortion between the transmission signal and other high-frequency signals from flowing into the reception path and thereby degrading the reception sensitivity.

[0105] Furthermore, in this embodiment, in particular, the first circuit component may be the power amplifier 10 and the second circuit component may be the low-noise amplifier 20 .

[0106] In this way, electromagnetic field coupling between the power amplifier 10 and the low-noise amplifier 20 can be suppressed, thereby suppressing unnecessary waves such as the high-output transmission signal amplified by the power amplifier, its harmonics, or intermodulation distortion between the transmission signal and other high-frequency signals from flowing into the receiving path and thereby degrading the receiving sensitivity.

[0107] [3. Structure of Via-Hole Conductor According to Modification Example]

[0108] In addition, the structure of the via-hole conductor 96 is not limited to the Figure 2 The structure shown is continuous from the main surface 91a to the main surface 91b.

[0109] Figure 4This is a cross-sectional view showing a modified example of via-hole conductor 96. As shown in this figure, via-hole conductor 96 has a structure in which multiple columnar conductors 96a, 96b, and 96c extending in the normal direction to main surfaces 91a and 91b are connected in cascade, with their centroids offset in the normal direction. Furthermore, the formation region A1 of columnar conductor 96a, located closest to the positive z-axis direction on module substrate 91, and the formation region A3 of columnar conductor 96c, located closest to the negative z-axis direction on module substrate 91, do not need to overlap when viewed from above. In other words, the modified example of via-hole conductor 96 does not need to have a region where the columnar conductors 96a to 96c overlap when viewed from above. Furthermore, the columnar conductors 96 a and 96 b are connected via a conductor pattern 96P extending in the y-axis direction in the module substrate 91 , and the columnar conductors 96 b and 96 c are connected via a conductor pattern 96P extending in the y-axis direction in the module substrate 91 .

[0110] [4. Effects, etc.]

[0111] As described above, the high-frequency module 1A according to this embodiment includes a module substrate 91 having a main surface 91a, a first circuit component and a second circuit component arranged on the main surface 91a, and a metal shield plate 70 arranged on the main surface 91a and set to a ground potential. The metal shield plate 70 includes a shield portion 71 extending in a direction perpendicular to the main surface 91a, and a bonding portion 74 extending from the shield portion 71 parallel to and spaced apart from the main surface 91a. The top surface of at least one of the first circuit component and the second circuit component is connected to the bonding portion 74 by a bonding wire 81. When the module substrate 91 is viewed from above, the metal shield plate 70 is arranged between the first circuit component and the second circuit component.

[0112] This suppresses electromagnetic field coupling between the first and second circuit components. Consequently, strong signal interference between the first and second circuit components can be suppressed, thereby minimizing degradation in the quality of transmitted or received signals. Furthermore, since at least one of the first and second circuit components is connected to the bonding portion 74 via the bonding wire 81, the ground electrode of that circuit component need not be located on the main surface 91a. This reduces the layout area of ​​the electrodes provided on the main surface 91a, enabling miniaturization of the module substrate 91. Consequently, a compact high-frequency module 1A can be provided that minimizes degradation in the quality of transmitted or received signals.

[0113] Furthermore, the high-frequency module 1A may further include a resin member 92 covering the main surface 91 a and at least a portion of the first and second circuit components; and a metal shield layer 95 covering the surface of the resin member 92 and set to a ground potential.

[0114] This improves the reliability of the first circuit component and the second circuit component, such as mechanical strength and moisture resistance, and suppresses inflow of external noise into the high-frequency module 1A.

[0115] Furthermore, in the high-frequency module 1A, the metal shield plate 70 and the metal shield layer 95 may be in contact with each other, and the metal shield plate 70 may be thicker than the metal shield layer 95 .

[0116] This improves the ability to suppress high-frequency noise generated by the circuit components of the high-frequency module 1A from flowing into other circuit components of the high-frequency module 1A, rather than the ability to shield external noise.

[0117] Furthermore, a hole 72 penetrating in the normal direction of the shield portion 71 may be formed between the metal shield plate 70 and the main surface 91 a .

[0118] Furthermore, in the high-frequency module 1A, a hole penetrating in the normal direction of the shield portion 71 may be formed between the metal shield plate 70 and the main surface 91 a .

[0119] This ensures good fluidity of the liquid resin near the metal shield 70 during the step of forming the resin member 92 on the main surface 91a. This prevents the formation of voids near the metal shield 70 where the resin member 92 is not formed.

[0120] In the high-frequency module 1A, the metal shield plate 70 may further include a bonding portion 73 extending from the shield portion 71 parallel to and in contact with the main surface 91 a , and the bonding portion 73 may be bonded to the ground electrode 94 g of the module substrate 91 .

[0121] Thus, the metal shield plate 70 and the main surface 91 a are bonded together via the bonding portion 73 , thereby improving the placement accuracy of the metal shield plate 70 and the bonding strength between the metal shield plate 70 and the main surface 91 a .

[0122] In addition, the high-frequency module 1A may also include a via-hole conductor 96 formed inside the module substrate 91, extending in a direction intersecting the main surface 91a and set to a ground potential, the metal shielding plate 70 is connected to the via-hole conductor 96 on the main surface 91a, and the outer diameter of the via-hole conductor 96 is greater than the thickness of the metal shielding plate 70.

[0123] This strengthens the grounding of the metal shield plate 70. Consequently, it is possible to suppress strong signal interference between two circuit components arranged across the metal shield plate 70, thereby improving the isolation between the transmission path, the reception path, and the transmission and reception paths, and accurately suppressing degradation in the quality of the transmitted or received signals.

[0124] Furthermore, in the high-frequency module 1A, at least one of the first circuit component and the second circuit component may be a surface-mount electronic component or a semiconductor IC.

[0125] Thus, a ground electrode can be formed on the top surface of a surface-mounted electronic component or semiconductor IC, and thus, the ground electrode can be connected to the bonding portion 74 via the bonding wire 81 without arranging the ground electrode on the main surface 91 a .

[0126] Alternatively, the high-frequency module 1A may further include a power amplifier 10 and a low-noise amplifier 20 , wherein the first circuit component is a first inductor connected to the output terminal of the power amplifier 10 , and the second circuit component is a second inductor connected to the input terminal of the low-noise amplifier 20 .

[0127] This can suppress electromagnetic field coupling between the first inductor and the second inductor, thereby preventing unnecessary waves such as the high-output transmission signal amplified by the power amplifier, its harmonics, or intermodulation distortion between the transmission signal and other high-frequency signals from flowing into the reception path and thereby degrading the reception sensitivity.

[0128] In the high-frequency module 1A, the first circuit component may be the power amplifier 10 , the second circuit component may be the low-noise amplifier 20 , the low-noise amplifier 20 may be included in the semiconductor IC 60 , and the top surface of the semiconductor IC 60 and the bonding portion 74 may be connected by a bonding wire 81 .

[0129] Thus, forming ground electrode 61g on the top surface of semiconductor IC 60 allows connection to bonding portion 74 via bonding wire 81 without disposing a ground electrode on main surface 91a. This strengthens grounding of low-noise amplifier 20 while miniaturizing module substrate 91.

[0130] Furthermore, the communication device 5 includes an RFIC 3 that processes a high-frequency signal transmitted and received by the antenna 2 , and a high-frequency module 1 that transmits the high-frequency signal between the antenna 2 and the RFIC 3 .

[0131] This makes it possible to provide a communication device 5 in which degradation in the quality of a transmission signal or a reception signal is suppressed.

[0132] (Other embodiments, etc.)

[0133] While the high-frequency module and communication device according to the present invention have been described above by way of embodiments, examples, and variations, the present invention is not limited to these embodiments, examples, and variations. Other embodiments achieved by combining arbitrary components of the above embodiments, examples, and variations, variations resulting from various modifications conceived by those skilled in the art to the above embodiments, examples, and variations without departing from the spirit of the present invention, and various devices incorporating the above high-frequency module and communication device are also encompassed by the present invention.

[0134] For example, in the high-frequency module 1A according to the embodiment, the circuit components constituting the high-frequency module 1A are arranged on a single main surface 91a of the module substrate 91. However, the circuit components may be separately arranged on the opposing main surfaces 91a and 91b of the module substrate 91. In other words, the circuit components constituting the high-frequency module 1A may be mounted on either one side or both sides of the module substrate.

[0135] For example, in the high-frequency modules and communication devices according to the above-described embodiments, examples, and modifications, other circuit elements and wirings may be inserted between paths connecting the circuit elements and signal paths disclosed in the drawings.

[0136] Industrial applicability

[0137] The present invention can be widely used in communication devices such as mobile phones as a high-frequency module disposed in a front-end unit that supports multiple frequency bands.

[0138] Description of Reference Numerals

[0139] 1. 1A high frequency module;

[0140] 2 antennas;

[0141] 3 RF signal processing circuit (RFIC);

[0142] 4 baseband signal processing circuit (BBIC);

[0143] 5 communication devices;

[0144] 10 power amplifier;

[0145] 15 PA control circuit;

[0146] 20 Low noise amplifier;

[0147] 30, 35 duplexer;

[0148] 31, 33 transmit filters;

[0149] 32, 34 receive filter;

[0150] 40, 41, 42 switches;

[0151] 40a, 41a, 42a common terminals;

[0152] 40b, 40c, 41b, 41c, 42b, 42c select terminals;

[0153] 50, 51, 52, 53, 54 matching circuit;

[0154] 60 semiconductor ICs;

[0155] 61g, 94g ground electrodes;

[0156] 70, 70A, 70B, 70C metal shielding plates;

[0157] 71, 71B shielding part;

[0158] 72 holes;

[0159] 73, 74 joints;

[0160] 81 bonding wires;

[0161] 91 module baseboard;

[0162] 91a, 91b main surfaces;

[0163] 92 resin components;

[0164] 95 metal shielding layer;

[0165] 96 via conductor;

[0166] 96a, 96b, 96c columnar conductors;

[0167] 96P conductor pattern;

[0168] 100 antenna connection terminal;

[0169] 110 Send input terminal;

[0170] 120 receiving output terminal;

[0171] 130 control signal terminal;

[0172] 150 external connection terminals;

[0173] 150g ground terminal;

[0174] A1 and A3 form the region;

[0175] AR, BR receiving path;

[0176] AT, BT sending path;

[0177] CTR transmit and receive path;

[0178] P, Q areas.

Claims

1. A high-frequency module comprising: A module substrate having a main surface; a first circuit component and a second circuit component, arranged on the main surface; and The metal plate is arranged on the main surface and is set to a ground potential. The metal plate has: a main body portion extending in a direction perpendicular to the main surface; and The first joining portion extends from the main body portion in parallel with and spaced apart from the main surface. The top surface of at least one of the first circuit component and the second circuit component and the first bonding portion are connected via a bonding wire. In a plan view of the module substrate, the metal plate is disposed between the first circuit component and the second circuit component. The high-frequency module further includes a via-hole conductor formed inside the module substrate, extending in a direction intersecting the main surface, and set to a ground potential. The metal plate is connected to the via conductor on the main surface. The outer diameter of the via-hole conductor is greater than or equal to the thickness of the metal plate.

2. The high-frequency module according to claim 1, wherein Also features: a resin member covering the main surface, the first circuit component, and at least a portion of the second circuit component; and The metal layer covers the surface of the resin member and is set to a ground potential.

3. The high-frequency module according to claim 2, wherein: The metal plate and the metal layer are in contact, The metal plate is thicker than the metal layer.

4. The high-frequency module according to any one of claims 1 to 3, wherein A hole penetrating in a normal direction of the main body is formed between the metal plate and the main surface.

5. The high-frequency module according to any one of claims 1 to 3, wherein The metal plate further includes a second joint portion extending from the main body portion in parallel with and in contact with the main surface. The second bonding portion is bonded to a ground electrode of the module substrate.

6. The high-frequency module according to any one of claims 1 to 3, wherein At least one of the first circuit component and the second circuit component is a surface-mount electronic component or a semiconductor IC.

7. The high-frequency module according to any one of claims 1 to 3, wherein Also features: power amplifier; and Low noise amplifier, The first circuit component is a first inductor connected to the output terminal of the power amplifier. The second circuit component is a second inductor connected to an input terminal of the low-noise amplifier.

8. The high-frequency module according to any one of claims 1 to 3, wherein The first circuit component is a power amplifier, The second circuit component is a low noise amplifier, The low noise amplifier is included in the first semiconductor IC, The top surface of the first semiconductor IC and the first bonding portion are connected via a bonding wire.

9. A communication device comprising: RF signal processing circuit, which processes the high frequency signal transmitted and received by the antenna; and In the high-frequency module according to any one of claims 1 to 8, the high-frequency signal is propagated between the antenna and the RF signal processing circuit.

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