A method, device, equipment and medium for detecting wafer chips

Abstract

The present application relates to the technical field of wafer die detection, and in particular to a wafer die detection method, device, equipment and medium. The method includes: obtaining a to-be-detected wafer image of a to-be-detected wafer and size information of the to-be-detected wafer; determining die position information corresponding to each die on the to-be-detected wafer based on the to-be-detected wafer image, and determining die total amount information, distance information between adjacent dies, the number of dies in the starting row, the number of dies in the ending row, the number of dies in the starting column, and the number of dies in the ending column based on all die position information; determining an arrangement mode based on the number of dies in the starting row, the number of dies in the ending row, the number of dies in the starting column, and the number of dies in the ending column; determining a detection mode according to the distance information and the arrangement mode; and determining the number of probes according to the size information of the to-be-detected wafer and the total amount information of the dies. The present application improves the detection efficiency of wafer dies.

Description

Technical Field

[0001] The present application relates to the technical field of wafer die detection, and in particular, to a wafer die detection method, device, equipment and medium. Background Art

[0002] A wafer is a basic raw material for manufacturing semiconductor devices and has a wide range of applications in various electronic devices. The die of the wafer affects the performance of the wafer, and in order to ensure the performance of the wafer, it is necessary to detect the die of the wafer.

[0003] In the related art, when detecting the die in a wafer, it is necessary to calibrate each die to determine the specific position of each die on the wafer, and then test each die one by one in sequence according to the position of the die, resulting in a relatively low detection efficiency.

[0004] Therefore, how to improve the detection efficiency of the die is an urgent problem to be solved by those skilled in the art. Summary of the Invention

[0005] In order to improve the detection efficiency of wafer die, the present application provides a wafer die detection method, device, equipment and medium.

[0006] In a first aspect, the present application provides a wafer die detection method, adopting the following technical solution:

[0007] Obtain a to-be-detected wafer image of a to-be-detected wafer and size information of the to-be-detected wafer, where the to-be-detected wafer includes a plurality of dies;

[0008] Based on the to-be-detected wafer image, determine the die position information corresponding to each die on the to-be-detected wafer, and based on all the die position information, determine the total die quantity information, the distance information between adjacent dies, the number of dies in the starting row, the number of dies in the ending row, the number of dies in the starting column, and the number of dies in the ending column;

[0009] Based on the number of dies in the starting row, the number of dies in the ending row, the number of dies in the starting column, and the number of dies in the ending column, determine the arrangement pattern;

[0010] According to the distance information and the arrangement pattern, determine the detection method; and determine the number of probes according to the size information of the to-be-detected wafer and the total die quantity information;

[0011] Detect the to-be-detected wafer according to the detection method and the number of probes to obtain a detection result.

[0012] By adopting the above technical solution, the image of the wafer to be detected and the size information of the wafer to be detected are obtained. The die positions corresponding to all dies on the wafer are determined according to the image of the wafer to be detected. According to the die position information corresponding to each die, the total die quantity information, the distance information between adjacent dies, the number of dies in the starting row, the number of dies in the ending row, the number of dies in the starting column, and the number of dies in the ending column are determined. Furthermore, the die arrangement pattern can be judged. The detection method is determined according to the distance information and the arrangement pattern, and the number of probes is determined according to the quantity information of the wafers to be detected and the total die quantity information. Based on the number of probes and the detection method, the wafers to be detected are subjected to corresponding detections. Different detection methods are determined for different distances between adjacent dies and die arrangement patterns, and the corresponding number of probes is determined according to the size of the wafers to be detected and the die quantity information, and the wafers to be detected are selectively tested to improve the efficiency of the wafers to be detected.

[0013] In a possible implementation manner, determining the arrangement pattern based on the number of dies in the starting row, the number of dies in the ending row, the number of dies in the starting column, and the number of dies in the ending column includes:

[0014] Judging whether the number of dies in the starting row is the same as the number of dies in the ending row, and judging whether the number of dies in the starting column is the same as the number of dies in the ending column;

[0015] If the number of dies in the starting row is the same as the number of dies in the ending row, and the number of dies in the starting column is the same as the number of dies in the ending column, it is determined that the arrangement pattern is a regular rectangular arrangement;

[0016] Otherwise, it is determined that the arrangement pattern is an irregular arrangement.

[0017] By adopting the above technical solution, by judging the number of dies in the starting row and the number of dies in the ending row, and the number of dies in the starting column and the number of dies in the ending column, the die arrangement pattern can be accurately obtained.

[0018] In a possible implementation manner, the determining the detection method according to the distance information and the arrangement pattern includes:

[0019] If the distance information is that the distance between adjacent dies is less than the preset maximum die distance threshold, and the arrangement pattern is a regular rectangular arrangement, it is determined that the detection method is interval symmetric detection;

[0020] If the distance information is that the distance between adjacent dies is less than the preset maximum die distance threshold, and the arrangement pattern is an irregular arrangement, it is determined that the detection method is interval diagonal detection;

[0021] If the distance information indicates that the distance between adjacent dies is not less than the preset maximum die - to - die distance threshold, and the arrangement pattern is a regular rectangular arrangement, then it is determined that the detection method is non - spaced symmetric detection;

[0022] If the distance information indicates that the distance between adjacent dies is not less than the preset maximum die - to - die distance threshold, and the arrangement pattern is an irregular arrangement, then it is determined that the detection method is non - spaced diagonal detection.

[0023] By adopting the above - mentioned technical solution, by determining the distance information, it is obtained that the distance between adjacent dies is less than the preset maximum die - to - die distance threshold and is in a regular rectangular arrangement. To improve the test efficiency and facilitate the movement of the probe, spaced symmetric detection can be adopted; if the distance between dies is less than the preset maximum die - to - die distance threshold and the arrangement pattern is irregular, when the distance between dies is too small, the probe needs to move frequently, and when the arrangement pattern is irregular, the probe cannot perform symmetric detection. Therefore, non - spaced diagonal detection is determined during detection; if the distance between adjacent dies is not less than the preset maximum die - to - die distance threshold and the arrangement pattern is a regular rectangular arrangement, then interlaced symmetric detection can be adopted. If the distance between dies is not less than the preset maximum die - to - die distance threshold and the arrangement pattern is irregular, then spaced diagonal testing is adopted. By corresponding to different detection methods according to the distance information between adjacent dies and the arrangement pattern, the die of the wafer to be detected can be detected targeted, and the influence of the distance between adjacent dies and the die arrangement pattern on the detection efficiency can be avoided.

[0024] In a possible implementation manner, determining the number of probes according to the size information of the wafer to be detected and the total number information of the dies includes:

[0025] Judge whether the size information of the wafer to be detected is less than the preset maximum wafer size threshold, and judge whether the total number information of the dies is less than the preset maximum die number threshold;

[0026] If the size information of the wafer to be detected is less than the preset maximum wafer size threshold, or the total number information of the dies is less than the preset maximum die number threshold, then it is determined that the number of probes is a single probe;

[0027] Otherwise, it is determined that the number of probes is multiple probes.

[0028] By adopting the above technical solution, it is determined whether the size information of the wafer to be detected is less than the preset maximum wafer size threshold, and it is determined whether the total number information of the die is less than the preset maximum die number threshold. If the size of the wafer to be detected is less than the preset maximum wafer size threshold, or the total number information of the die is less than the preset maximum die number threshold, then the number of probes is determined to be a single probe, which indicates that the number of die is small, and a single probe can quickly complete the test of the die. Otherwise, the number of probes is determined to be multiple probes, that is, the wafer size is large, or the number of die is large, and it takes more time to use a single probe. Thus, the detection speed of the wafer to be detected can be improved from the perspective of the number of probes.

[0029] In a possible implementation manner, based on the image of the wafer to be detected, the die position information corresponding to each die on the wafer to be detected is determined, including:

[0030] The image of the wafer to be detected is input into a pre-trained neural network model to obtain the die position information corresponding to each die.

[0031] By adopting the above technical solution, the image of the wafer to be detected is input into a pre-trained neural network model to obtain the die position information corresponding to each die. By inputting the image of the wafer to be detected into the pre-trained neural network model, more accurate die position information can be obtained through the learning of the neural network model, and thus the detection accuracy can be improved.

[0032] In a possible implementation manner, it further includes:

[0033] Obtain the number of defective die based on the detection result;

[0034] Obtain the ratio of the number of defective die of the wafer to be detected to the preset number of defective die, and determine the re-inspection times of the wafer after detection according to the corresponding relationship between the ratio and the re-inspection times of the wafer, where the ratio represents the ratio of the difference between the number of defective die of the wafer to be detected and the preset number of defective die to the preset number of defective die;

[0035] Re-inspect a number of defective die of the wafer to be detected according to the re-inspection times.

[0036] By adopting the above technical scheme, the number of unqualified core particles can be obtained according to the detection, and the ratio of the number of unqualified core particles of the wafer to be detected to the preset number of unqualified core particles can be obtained, and the number of re-inspections of the wafer after detection can be determined according to the corresponding relationship between the ratio and the number of wafer re-inspections. According to the number of re-inspections, several unqualified core particles of the wafer to be detected are re-inspected, and the number of re-inspections is determined based on the corresponding relationship. This can not only improve the detection accuracy, but also avoid too many re-inspections, which leads to low detection efficiency, and too few re-inspections, which makes it impossible to guarantee the re-inspection accuracy. It can further improve the rationality of the number of re-inspections.

[0037] In a possible implementation, the process of testing the wafer to be tested according to the testing method and the number of probes and obtaining the test result includes:

[0038] Obtaining the preset inspection time of the wafer to be inspected;

[0039] Based on the preset detection time of the wafer to be detected, the number of core particles and the number of probes, the detection time of each probe is obtained.

[0040] By adopting the above technical solution, the size and number of cores of each wafer to be inspected are different, so the preset inspection time of the wafer to be inspected is also different. According to the preset test time of the wafer to be inspected, the number of cores and the number of probes, the inspection time of each probe can be obtained, the inspection time of each probe can be clarified, and the inspection time can be strictly controlled.

[0041] In a second aspect, the present application provides a wafer core particle detection device, which adopts the following technical solution:

[0042] A wafer core particle detection device, comprising:

[0043] A first acquisition module is used to acquire a wafer image to be inspected and size information of the wafer to be inspected, wherein the wafer to be inspected includes a plurality of core particles;

[0044] A first determination module is used to determine the core particle position information corresponding to each of the core particles on the wafer to be detected based on the wafer image to be detected, and determine the total amount information of the core particles, the distance information between adjacent core particles, the number of core particles in the starting row, the number of core particles in the last row, the number of core particles in the starting column, and the number of core particles in the last column based on the position information of all core particles;

[0045] An arrangement mode determination module, used to determine the arrangement mode according to the number of core particles in the starting row, the number of core particles in the last row, the number of core particles in the starting column, and the number of core particles in the last column;

[0046] A detection method determination module, configured to determine a detection method according to distance information and arrangement mode, and determine the number of probes according to the size information of the wafer to be detected and the total amount information of the die;

[0047] A detection result acquisition module, configured to detect the wafer to be detected according to the detection method and the number of probes, and obtain a detection result.

[0048] Third aspect, the present application provides an electronic device, adopting the following technical solution:

[0049] At least one processor;

[0050] A memory;

[0051] At least one application program, wherein at least one application program is stored in the memory and configured to be executed by at least one processor, and the at least one application program is configured to: execute the method according to any one of the first aspect.

[0052] Fourth aspect, the present application provides a computer-readable storage medium, adopting the following technical solution:

[0053] A computer-readable storage medium, on which a computer program is stored, and when the computer program is executed in a computer, the computer is made to execute the method according to any one of the first aspect.

[0054] In summary, the present application includes at least one of the following beneficial technical effects:

[0055] 1. By adopting the above technical solution, obtain the image of the wafer to be detected and the size information of the wafer to be detected, determine the die positions corresponding to all the dies on the wafer according to the image of the wafer to be detected, and determine the total amount information of the dies, the distance information between adjacent dies, the number of dies in the starting row, the number of dies in the ending row, the number of dies in the starting column, and the number of dies in the ending column according to the die position information corresponding to each die. Furthermore, the arrangement mode of the dies can be judged, the detection method is determined according to the distance information and the arrangement mode, and the number of probes is determined according to the size information of the wafer to be detected and the total amount information of the dies. Based on the number of probes and the detection method, the wafer to be detected is subjected to corresponding detection. Different detection methods are determined for different distances between adjacent dies and the arrangement mode of the dies, and the corresponding number of probes is determined according to the size of the wafer to be detected and the die quantity information, and the wafer to be detected is selectively tested, improving the efficiency of the wafer to be detected.

[0056] 2. Obtain the number of defective die according to the detection result, and determine the re-inspection times based on the ratio between the number of defective die of the wafer to be detected and the preset number of defective die, as well as the corresponding relationship between the ratio and the re-inspection times of the wafer. Thus, the rationality of the re-inspection times of the wafer can be effectively improved. Moreover, by re-inspecting a number of defective die of the wafer to be detected, the detection accuracy can also be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] Figure 1 FIG. is a schematic flow chart of a method for detecting die of a wafer provided by an embodiment of the present application.

[0058] Figure 2 FIG. is a schematic diagram of a wafer with die arranged in a positive rectangle provided by an embodiment of the present application.

[0059] Figure 3 FIG. is a schematic diagram of a wafer with die arranged irregularly provided by an embodiment of the present application.

[0060] Figure 4 FIG. is a schematic structural diagram of a device for detecting die of a wafer provided by an embodiment of the present application.

[0061] Figure 5 FIG. is a schematic structural diagram of an electronic device provided by an embodiment of the present application. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0062] The present application will be further described in detail below with reference to the accompanying drawings.

[0063] This specific embodiment is only an explanation of the present application and does not limit the present application. After reading this specification, those skilled in the art can make modifications without creative contributions to this embodiment as needed, but as long as they are within the scope of the present application, they are protected by the patent law.

[0064] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Apparently, the described embodiments are some, but not all, of the embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art without making creative efforts based on the embodiments in the present application belong to the scope of protection of the present application.

[0065] In addition, the term "and / or" in this article is only a description of the association relationship of associated objects, indicating that three relationships can exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this article generally represents an "or" relationship between the associated objects before and after, unless otherwise specified.

[0066] The following further describes the embodiments of the present application in conjunction with the accompanying drawings of the specification.

[0067] A wafer is a basic raw material for manufacturing semiconductor devices and has a wide range of applications in various electronic devices. The die on the wafer affects the performance of the wafer. To ensure the performance of the wafer, it is necessary to detect the die on the wafer.

[0068] However, the inventors have found that in the related art, when detecting the die in a wafer, it is necessary to calibrate each die to determine the specific position of each die on the wafer, and then test each die one by one in sequence according to the position of the die, resulting in relatively low detection efficiency. Therefore, how to improve the detection efficiency of the die is an urgent problem to be solved by those skilled in the art.

[0069] A wafer refers to a silicon wafer used for fabricating all silicon semiconductor integrated circuits, which is circular in shape and has an important application in semiconductor integrated materials. The die on the wafer are prefabricated wafers with specific functions and can be combined and integrated. The shapes of the die on the wafer to be detected are all the same rectangles, which are regularly arranged on the wafer to be detected, and each wafer includes several die.

[0070] Specifically, the embodiments of the present application provide a method for detecting die on a wafer, which is executed by an electronic device. In combination with Figure 1 , Figure 1 FIG. is a schematic flowchart of a method for detecting die on a wafer provided by an embodiment of the present application. Among them, the method includes step S101, step S102, step S103, step S104 and step S105, where:

[0071] Step S101: Obtain the image of the wafer to be detected and the size information of the wafer to be detected, where the wafer to be detected includes multiple die.

[0072] For the embodiments of the present application, place the wafer to be detected on a probe table, and the image of the wafer to be detected can be obtained through a camera device, and then input the image of the wafer to be detected into the electronic device. The size information of the wafer to be detected is pre-input into the electronic device or can also be obtained by predicting the size based on the image of the wafer to be detected. The size information of the wafer to be detected includes the radius of the wafer to be detected.

[0073] Step S102: Determine the die position information corresponding to each die on the wafer to be detected based on the image of the wafer to be detected, and determine the total die quantity information, the distance information between adjacent die, the number of die in the starting row, the number of die in the ending row, the number of die in the starting column, and the number of die in the ending column based on all the die position information.

[0074] Specifically, the method for determining the die position information corresponding to each die on the wafer based on the wafer image to be detected may be to input the wafer image to be detected into a pre-trained neural network model to obtain the die position information corresponding to each die. The position information of the die is the specific position of the die on the wafer to be detected, which may include the coordinates of the die edge points. Among them, the coordinates of the die edge points may include the coordinates of the four corner points of the die.

[0075] The method for determining the distance information between adjacent dies based on all die position information may be as follows: Obtain two adjacent dies in the horizontal direction, and determine the horizontal distance based on the position information of the two dies. For example, the lower left coordinate of die A is (X1, Y1), the lower right coordinate is (X2, Y1), and the lower left coordinate of die B is (X3, Y1). Then the horizontal distance between die A and die B = X3 - X2; or, obtain two adjacent dies in the vertical direction, and determine the vertical distance based on the position information of the two dies. For example, the lower left coordinate of die C is (X4, Y4), and the upper left coordinate of die D is (X4, Y5). Then the vertical distance between die C and die D = Y5 - Y4; It can be understood that the horizontal distances between all adjacent dies on the wafer to be detected are the same, and the vertical distances between all adjacent dies on the wafer to be detected are the same; and, generally, the horizontal distance is the same as the vertical distance.

[0076] Specifically, the method for determining the number of dies in the starting row and the number of dies in the ending row based on all die position information may be as follows: Determine the die position information of all dies in the starting row based on all die position information, and determine the number of dies in the starting row based on the die position information of all dies in the starting row; Determine the die position information of all dies in the ending row based on all die position information, and determine the number of dies in the ending row based on the die position information of all dies in the ending row. Similarly, determine the die position information of all dies in the starting column based on all die position information, and determine the number of dies in the starting column based on the die position information of all dies in the starting column; Determine the die position information of all dies in the ending column based on all die position information, and determine the number of dies in the ending column based on the die position information of all dies in the ending column.

[0077] Further, in the embodiment of the present application, to improve the accuracy of die number detection, after determining the total die information, the distance information between adjacent dies, the number of dies in the starting row, the number of dies in the ending row, the number of dies in the starting column, and the number of dies in the ending column based on all die position information, it further includes:

[0078] Obtain a number of reference wafer information. Among them, each reference wafer information includes the size information of each reference wafer, the distance information between adjacent dies of each reference wafer, and the total number of dies corresponding to the size information of each reference wafer;

[0079] Generate a correspondence based on information of a plurality of wafers to be referenced, wherein the correspondence is a correspondence among a plurality of size information, a plurality of distance information, and a plurality of die total amount ranges, and wherein the die total amount range for a certain size information and distance information is determined according to the information of the wafer to be referenced corresponding to the certain size information;

[0080] Based on the correspondence, the distance information of the wafer to be detected, and the size of the wafer to be detected, determine the die total amount range of the wafer to be detected;

[0081] Determine whether the die total amount of the wafer to be detected is within the die total amount range. If not, issue an alarm for incorrect die total amount. If so, determine that the verification passes.

[0082] Specifically, determine whether the die total amount of the wafer to be detected is within the die total amount range. If so, it indicates that the die total amount of the wafer to be detected obtained is correct. If not, it indicates that the die total amount of the wafer to be detected is incorrect and an error alarm needs to be issued to remind the technician to avoid affecting subsequent detections due to incorrect die total amount, and at the same time, the accuracy of the die total amount can be improved.

[0083] Step S103: Determine the arrangement pattern based on the number of dies in the starting row, the number of dies in the ending row, the number of dies in the starting column, and the number of dies in the ending column.

[0084] Specifically, the arrangement pattern may include a regular rectangular arrangement and an irregular arrangement. In a regular rectangular arrangement, the number of dies on opposite sides of the wafer is the same. As Figure 2 shown, Figure 2 is a schematic diagram of a wafer with dies arranged in a regular rectangle, that is, the number of dies in the starting row is the same as the number of dies in the ending row, and the number of dies in the starting column is the same as the number of dies in the ending column. The arrangement pattern that is not a regular rectangular arrangement is an irregular arrangement. As Figure 3 shown, Figure 3 is a schematic diagram of a wafer with dies arranged irregularly.

[0085] Step S104: Determine the detection method according to the distance information and the arrangement pattern; and determine the number of probes according to the size information and the total amount information of the dies of the wafer to be detected.

[0086] Specifically, the distance information can determine whether the detection method is spaced or non-spaced, and the arrangement pattern can determine whether the detection method is symmetric detection or diagonal detection. Thus, the determined detection methods may include: spaced symmetric detection, spaced diagonal detection, non-spaced symmetric detection, and non-spaced diagonal detection.

[0087] Meanwhile, to improve the detection efficiency, the number of probes can be determined by combining the size information and the total number of die. The number of probes can be 1, 2, 4, or 8, and the embodiments of the present application do not limit this further.

[0088] Step S105: Detect the wafer to be detected according to the detection method and the number of probes, and obtain a detection result.

[0089] Specifically, when the number of probes is a single probe, when detecting the wafer to be detected, single-probe - spaced symmetric detection, or single-probe - spaced diagonal detection, or single-probe - non-spaced symmetric detection, or single-probe - non-spaced diagonal detection can be used; when the number of probes is a single probe, the operation is simpler when moving the probe; when the number of probes is multiple probes, when detecting the wafer to be detected, multi-probe - spaced symmetric detection, or multi-probe - spaced diagonal detection, or multi-probe - non-spaced symmetric detection, or multi-probe - non-spaced diagonal detection can be used, that is, when the number of probes corresponds to multiple probes, the detection time can be reduced and the detection speed can be increased. Among them, the detection result includes all the die on the wafer to be detected, and the unqualified die are marked.

[0090] Based on the above embodiments, obtain the image to be detected of the wafer to be detected and the size information of the wafer to be detected. Determine the die position information and die quantity information corresponding to each of all the die on the wafer according to the image of the wafer to be detected. The die position information and die quantity of different wafers to be detected are different, corresponding to different detection methods. Determine the distance information between adjacent die according to the die position information corresponding to each die, and determine the arrangement pattern according to the number of die in the starting row, the number of die in the ending row, the number of die in the starting column, and the number of die in the ending column. Combine the distance information and the arrangement pattern to determine the detection method. Different distance information and different arrangement patterns each correspond to different detection methods. By selecting a suitable detection method through the distance information and the arrangement pattern, the efficiency of die detection can be effectively improved.

[0091] Further, in the embodiments of the present application, determining the arrangement pattern based on the number of die in the starting row, the number of die in the ending row, the number of die in the starting column, and the number of die in the ending column includes:

[0092] Judge whether the number of die in the starting row is the same as the number of die in the ending row, and judge whether the number of die in the starting column is the same as the number of die in the ending column;

[0093] If the number of die in the starting row is the same as the number of die in the ending row, and the number of die in the starting column is the same as the number of die in the ending column, then determine that the arrangement pattern is a regular rectangular arrangement;

[0094] Otherwise, determine that the arrangement pattern is an irregular arrangement.

[0095] Specifically, the electronic device determines whether the number of die on the starting row and the number of die on the ending row that have been obtained are the same, and determines whether the number of die on the starting column and the number of die on the ending column that have been obtained are the same; if it is determined through the judgment that the number of die on the starting row and the number of die on the ending row are the same, and the number of die on the starting column and the number of die on the ending column are the same, it indicates that the side length information of each pair of sides is the same, that is, the arrangement of die on the wafer to be detected is a regular rectangular arrangement; if the number of die on the starting row and the number of die on the ending row are different, or the number of die on the starting column and the number of die on the ending column are different, it indicates that the opposite sides are different, and the arrangement of die on the wafer to be detected is an irregular arrangement, that is, a polygon. Different arrangement methods of die on the wafer to be detected correspond to different test methods. Therefore, by judging the arrangement method and selecting an appropriate test method, the detection efficiency and accuracy can be improved.

[0096] In a possible implementation manner, according to the distance information and the arrangement method, the detection method is determined, including:

[0097] If the distance information is that the distance between adjacent die is less than the preset maximum distance threshold between die, and the arrangement method is a regular rectangular arrangement, then the detection method is determined to be interval symmetric detection;

[0098] If the distance information is that the distance between adjacent die is less than the preset maximum distance threshold between die, and the arrangement method is an irregular arrangement, then the detection method is determined to be interval diagonal detection;

[0099] If the distance information is that the distance between adjacent die is not less than the preset maximum distance threshold between die, and the arrangement method is a regular rectangular arrangement, then the detection method is determined to be non - interval symmetric detection;

[0100] If the distance information is that the distance between adjacent die is not less than the preset maximum distance threshold between die, and the arrangement method is an irregular arrangement, then the detection method is determined to be non - interval diagonal detection.

[0101] Specifically, when the distance between adjacent die is less than the maximum distance threshold between die, it indicates that the electronic device needs to improve the control accuracy when the control probe detects adjacent die. However, in this case, the detection efficiency is low, and more time is required to control the accuracy of the probe movement distance. The arrangement pattern is a regular rectangular arrangement, indicating that the opposite side lengths are the same, that is, the regular rectangle is symmetric. Therefore, in order to improve the detection efficiency, interval symmetric testing can be used to improve the detection efficiency of the die. When the distance between adjacent die is less than the maximum distance threshold between die and the arrangement pattern is an irregular arrangement, the arrangement pattern of the die is asymmetric at this time. Therefore, interval diagonal testing needs to be adopted to improve the detection efficiency. When the distance between adjacent die is not less than the maximum distance threshold between die and the arrangement pattern is a regular rectangular arrangement, the detection method of interlaced symmetric detection is determined. If the distance between adjacent die is not less than the maximum distance threshold between die and the arrangement pattern is an irregular arrangement, the detection method is determined to be interval diagonal testing. Among them, the maximum distance threshold between die is set according to experience and is not limited in the embodiments of the present application. Different detection methods are correspondingly used according to the relationship between the distance between adjacent die and the maximum distance threshold between die and the arrangement pattern of the die, and the detection efficiency is effectively improved.

[0102] Based on the above embodiments, it is judged whether the distance between adjacent die is less than the maximum distance threshold between die, and the arrangement pattern is judged. Different detection methods are correspondingly used based on different distance information and arrangement patterns. The detection method is determined from multiple perspectives, which can not only ensure the rationality of the detection method, but also improve the detection efficiency.

[0103] Further, in the embodiments of the present application, determining the number of probes according to the size information of the wafer to be detected and the total number information of the die includes:

[0104] Judging whether the size information of the wafer to be detected is less than the maximum wafer size threshold, and judging whether the total number information of the die is less than the maximum die number threshold;

[0105] If the size information of the wafer to be detected is less than the maximum wafer size threshold, or the total number information of the die is less than the maximum die number threshold, it is determined that the number of probes is a single probe;

[0106] Otherwise, it is determined that the number of probes is multiple probes.

[0107] Specifically, the size information of the wafer to be detected is pre-input into the electronic device. In the embodiments of the present application, the maximum size threshold of the preset wafer and the maximum number threshold of the preset die are not limited, and the user can set them by themselves. If the size information of the wafer to be detected is less than the maximum size threshold of the preset wafer, or the total amount information of the die is less than the maximum number threshold of the preset die, it indicates that the size of the wafer to be detected is small or the total amount of the die is small, and then it is determined that the number of probes is a single probe, so that the detection of the wafer to be detected can be quickly completed. If the size information of the wafer to be detected is not less than the maximum size threshold of the preset wafer, and / or the total amount information of the die is not less than the maximum number threshold of the preset die, it indicates that the size of the wafer to be detected is large and / or the number of the die is large, so the number of probes is determined to be multiple probes to effectively improve the detection speed. For example, the first difference between the size of the wafer to be detected and the maximum size threshold of the preset wafer, or the second difference between the total amount of the die and the maximum number threshold of the preset die can be calculated. If the first difference is greater than the corresponding preset first maximum difference, or the second difference is greater than the corresponding preset second maximum difference, it indicates that the size of the wafer to be detected is much larger than the maximum size threshold of the preset wafer, or the total amount of the die is much larger than the maximum number threshold of the preset die. To improve the detection efficiency, the number of probes can be determined to be 4; if the first difference is not greater than the corresponding preset first maximum difference, or the second difference is not greater than the corresponding preset second maximum difference, the number of probes is determined to be 2. Among them, in the embodiments of the present application, the preset first maximum difference and the preset second maximum difference are set by technicians according to experience, and the embodiments of the present application do not limit them.

[0108] Based on the above embodiments, the size information of the wafer to be detected and the total amount of the die are judged. For the case where the size of the wafer to be detected is large or the total amount of the die is large, the number of probes is increased, and using multiple probes for testing can effectively improve the detection efficiency.

[0109] Further, in the embodiments of the present application, based on the image of the wafer to be detected, the die position information corresponding to each die on the wafer is determined, including:

[0110] Input the image of the wafer to be detected into a pre-trained neural network model to obtain the die position information corresponding to each die.

[0111] Specifically, training samples for training a neural network model are obtained. The training samples include multiple wafer sample images and their corresponding several die position information labels. The multiple wafer sample images are input into the neural network model to be trained, and the corresponding die position information labels are obtained. According to the training die position information and their corresponding die position information labels, a loss value is determined using a preset loss function, and the neural network model to be trained is iteratively trained according to the loss value until a preset loss threshold is reached. The neural network model to be trained that reaches the preset loss threshold is determined as the trained neural network model. Inputting the wafer image to be detected into the neural network model can quickly obtain the die position information corresponding to each die.

[0112] Based on the above embodiments, using the neural network model to obtain the die position information corresponding to each die in the wafer image to be detected can not only obtain accurate die position information but also improve the speed of obtaining die position information.

[0113] Further, to improve the die detection accuracy, in the embodiments of the present application, it further includes: steps SA1 - SA3 (not shown in the drawings), where:

[0114] SA1: Obtain the number of defective dies based on the detection result.

[0115] Specifically, after the wafer to be detected is completed, the electronic device can mark the defective dies on the wafer image. In the embodiments of the present application, preferably, the defective dies are marked in red, that is, the detection result includes the detected qualified dies and the detected defective dies. The electronic device can obtain the number of defective dies according to the position information of the defective dies, that is, the number of the position information of the defective dies corresponds to the number of defective dies.

[0116] SA2: Obtain the ratio of the number of defective dies of the wafer to be detected to the preset number of defective dies, and determine the re - inspection times of the wafer after detection according to the corresponding relationship between the ratio and the re - inspection times of the wafer, where the ratio represents the ratio of the difference between the number of defective dies of the wafer to be detected and the preset number of defective dies to the preset number of defective dies;

[0117] SA3: Re - inspect several defective dies of the wafer to be detected according to the re - inspection times.

[0118] Specifically, if the number of defective die is greater than the preset number of defective die, obtain the ratio of the number of defective die to the preset number of defective die, that is, ratio = (number of defective die - preset number of defective die) / preset number of defective die. In the embodiments of the present application, preferably, the preset number of defective die = total number of die * 5%. If the ratio is within the first preset ratio range, determine that the re-inspection times is the first preset times; if the ratio is within the second preset ratio range, determine that the re-inspection times is the second preset times; if the ratio is within the third preset ratio range, determine that the re-inspection times is the third preset times. Furthermore, based on the corresponding relationship between the ratio and the re-inspection times, the re-inspection times of the wafer to be detected can be determined, which can be the first preset times, or the second preset times, or the third preset times. The embodiments of the present application do not limit the first preset ratio range, the second preset ratio range, the third preset ratio range, the first preset times, the second preset times, and the third preset times, and users can set them by themselves. It can be understood that the values within the third preset ratio range > the values within the second preset ratio range > the values within the first preset ratio range, and the third preset times > the second preset times > the first preset times. If the number of defective die is less than the preset number of defective die, determine that the re-inspection times of the wafer after detection is the fourth preset times. In the embodiments of the present application, preferably, the fourth preset times is 1 time. Based on the above embodiments, the re-inspection times of the wafer after detection can be determined according to the corresponding relationship between the number of defective die, the preset number of defective die, and the re-inspection times of the wafer. Different corresponding relationships between the number of defective die, the preset number of defective die, and the re-inspection times of the wafer are different. Determining the re-inspection times according to the corresponding relationship can avoid multiple inspections and wasting time, and at the same time, it can also avoid the decrease in accuracy due to too few re-inspection times, effectively improving the detection accuracy of the wafer die.

[0119] Further, in the embodiments of the present application, to improve the accuracy of the detection result, when step SA3 performs re-inspection on several defective die of the wafer to be detected, it may specifically include steps SA31 - SA33 (the attached drawing is not shown), where:

[0120] SA1. Obtain the position information of each die of several defective die of the wafer to be detected;

[0121] SA2. Determine whether there are defective die within the edge position range based on the position information of all defective die;

[0122] SA3. If there are, determine that the re-inspection time of the defective die within the edge position range is the first preset re-inspection time; if not, determine that the re-inspection time of the defective die not within the edge position range is the second preset re-inspection time.

[0123] Specifically, the electronic device can mark all unqualified die, and record the position information of each unqualified die during the marking process. Among them, if the position information of the unqualified die is in the starting row, or the ending row, or the starting column, or the ending column of the wafer to be detected, it is determined that the unqualified die is within the edge position range, that is, there is an unqualified die within the edge position range. Retest all unqualified die, and determine that the retest time of the unqualified die within the edge position range is the first preset retest time, and the retest time of the unqualified die not within the edge position range is the second preset retest time. It can be understood that the first preset retest time > the second preset retest time. Among them, when this application retests the unqualified die within the edge position range, due to the special position, the detection difficulty is high and the detection accuracy rate is relatively low. Therefore, key detection of the unqualified die within the edge position range can effectively improve the accuracy rate of the detection result.

[0124] Based on the above embodiments, retest the unqualified die of the wafer to be detected, obtain the position information of each die of all unqualified die, and judge whether there is an unqualified die within the edge position range for all position information. Due to the special nature of the edge position, the detection accuracy rate is relatively low during the detection process. Retesting the unqualified die and key detecting the unqualified die within the edge position range can effectively improve the detection accuracy rate.

[0125] Further, to improve the detection speed, in the embodiment of the present application, before obtaining the detection result by detecting the wafer to be detected according to the detection method and the number of probes, it further includes:

[0126] Obtain the preset detection time of the wafer to be detected;

[0127] Based on the preset detection time, the number of die, and the number of probes of the wafer to be detected, obtain the detection time of each probe.

[0128] Specifically, the size of each wafer to be detected is different and the number of die is different. Therefore, the preset detection time of each wafer to be detected is also different. The embodiment of the present application does not limit the preset detection time of the wafer to be detected, and the user can set it by himself.

[0129] Obtain the number of die. The preset detection time of the wafer to be detected is pre-input into the electronic device. If the number of probes is a single probe, the detection time of each probe = the preset test time of the wafer to be detected / the number of die; if the number of probes is multiple probes, the detection time of each probe = the preset detection time of the wafer to be detected / (the number of die / the number of probes). By obtaining the detection time of each probe, the detection time of all die of the wafer to be detected can be strictly controlled, and the detection efficiency can be improved.

[0130] The following introduces a wafer die detection device provided by an embodiment of the present application. The wafer die detection device described below can be correspondingly referred to the wafer die detection method described above. Please refer to Figure 2 , Figure 2 FIG. Figure 2 is a schematic structural diagram of a wafer die detection device provided by an embodiment of the present application, including:

[0131] A first acquisition module 210, configured to acquire a to-be-detected wafer image of a to-be-detected wafer and size information of the to-be-detected wafer, where the to-be-detected wafer includes a plurality of dies;

[0132] A first determination module 220, configured to determine die position information corresponding to all dies on the to-be-detected wafer based on the to-be-detected wafer image, and determine die total amount information, distance information between adjacent dies, the number of dies in the starting row, the number of dies in the ending row, the number of dies in the starting column, and the number of dies in the ending column based on all die position information;

[0133] An arrangement mode determination module 230, configured to determine an arrangement mode according to the number of dies in the starting row, the number of dies in the ending row, the number of dies in the starting column, and the number of dies in the ending column;

[0134] A second determination module 240, configured to determine a detection mode according to the distance information and the arrangement mode; and determine the number of probes according to the size information of the to-be-detected wafer and the total amount information of the dies;

[0135] An acquisition detection result module 250, configured to detect the to-be-detected wafer according to the detection mode and the number of probes to obtain a detection result.

[0136] In a possible implementation manner in an embodiment of the present application, when the arrangement mode determination module 250 executes to determine a detection mode according to the distance information and the arrangement mode; and determine the number of probes according to the size information of the to-be-detected wafer and the total amount information of the dies, it is configured to:

[0137] Judge whether the number of dies in the starting row is the same as the number of dies in the ending row, and judge whether the number of dies in the starting column is the same as the number of dies in the ending column;

[0138] If the number of dies in the starting row is the same as the number of dies in the ending row, and the number of dies in the starting column is the same as the number of dies in the ending column, it is determined that the arrangement mode is a regular rectangular arrangement;

[0139] Otherwise, it is determined that the arrangement mode is an irregular arrangement.

[0140] In a possible implementation manner in an embodiment of the present application, when the second determination module 240 executes to determine a detection mode according to the distance information and the arrangement mode, it is configured to:

[0141] If the distance information indicates that the distance between adjacent dies is less than the preset maximum distance threshold between dies, and the arrangement pattern is a regular rectangular arrangement, then determine that the detection method is interval symmetric detection;

[0142] If the distance information indicates that the distance between adjacent dies is less than the preset maximum distance threshold between dies, and the arrangement pattern is an irregular arrangement, then determine that the detection method is interval diagonal detection;

[0143] If the distance information indicates that the distance between adjacent dies is not less than the preset maximum distance threshold between dies, and the arrangement pattern is a regular rectangular arrangement, then determine that the detection method is non - interval symmetric detection;

[0144] If the distance information indicates that the distance between adjacent dies is not less than the preset maximum distance threshold between dies, and the arrangement pattern is an irregular arrangement, then determine that the detection method is non - interval diagonal detection.

[0145] In a possible implementation manner in the embodiments of the present application, determine the number of probes according to the size information of the wafer to be detected and the total number information of the dies, for:

[0146] Judge whether the size information of the wafer to be detected is less than the preset maximum wafer size threshold, and judge whether the total number information of the dies is less than the preset maximum die number threshold;

[0147] If the size information of the wafer to be detected is less than the preset maximum wafer size threshold, or the total number information of the dies is less than the preset maximum die number threshold, then determine that the number of probes is a single probe;

[0148] Otherwise, determine that the number of probes is multiple probes.

[0149] In a possible implementation manner in the embodiments of the present application, determine the die position information corresponding to each die on the wafer according to the image of the wafer to be detected, for:

[0150] Input the image of the wafer to be detected into a pre - trained neural network model to obtain the die position information corresponding to each die.

[0151] A possible implementation manner in the embodiments of the present application further includes:

[0152] A re - inspection module for unqualified dies, for:

[0153] Obtain the number of unqualified dies based on the detection result;

[0154] Obtain the ratio of the number of unqualified dies of the wafer to be detected to the preset number of unqualified dies, and determine the re - inspection times of the wafer after detection according to the corresponding relationship between the ratio and the re - inspection times of the wafer, where the ratio represents the ratio of the difference between the number of unqualified dies of the wafer to be detected and the preset number of unqualified dies to the preset number of unqualified dies;

[0155] Retest a number of unqualified die of the wafer to be detected according to the number of retests.

[0156] In a possible implementation manner of the embodiments of the present application, before detecting the wafer to be detected according to the detection method and the number of probes and obtaining a detection result, it further includes:

[0157] A detection time determination module, configured to:

[0158] Obtain a preset detection time of the wafer to be detected;

[0159] Based on the preset detection time, the number of die, and the number of probes of the wafer to be detected, obtain the detection time of each probe.

[0160] Next, an electronic device provided by the embodiments of the present application will be introduced. The electronic device described below can be correspondingly referred to the wafer die detection method described above.

[0161] The embodiments of the present application provide an electronic device, as Figure 3 shown, Figure 3 is a schematic structural diagram of an electronic device provided by the embodiments of the present application, Figure 3 The electronic device 300 shown includes: a processor 301 and a memory 303. Among them, the processor 301 and the memory 303 are connected, such as connected through a bus 302. Optionally, the electronic device 300 may further include a transceiver 304. It should be noted that in practical applications, the transceiver 304 is not limited to one, and the structure of the electronic device 300 does not constitute a limitation to the embodiments of the present application.

[0162] The processor 301 may be a CPU (Central Processing Unit, central processor), a general-purpose processor, a DSP (Digital Signal Processor, data signal processor), an ASIC (Application Specific Integrated Circuit, application-specific integrated circuit), an FPGA (Field Programmable Gate Array, field programmable gate array) or other programmable logic devices, transistor logic devices, hardware components or any combination thereof. It can implement or execute various exemplary logic blocks, modules, and circuits described in connection with the disclosed content of the embodiments of the present application. The processor 301 may also be a combination of computing functions, such as a combination of one or more microprocessors, a combination of a DSP and a microprocessor, etc.

[0163] The bus 302 may include a path for transmitting information between the above components. The bus 302 can be a PCI (Peripheral Component Interconnect) bus, an EISA (Extended Industry Standard Architecture) bus, or the like. The bus 302 can be divided into an address bus, a data bus, a control bus, etc. For the sake of convenience of representation, Figure 3 it is only represented by a thick line in Figure 3 , but it does not mean that there is only one bus or one type of bus.

[0164] The memory 303 can be a ROM (Read Only Memory) or other types of static storage devices that can store static information and instructions, a RAM (Random Access Memory) or other types of dynamic storage devices that can store information and instructions, or it can also be an EEPROM (Electrically Erasable Programmable Read Only Memory), a CD-ROM (Compact Disc Read Only Memory), or other optical disc storage, optical disc storage (including compact discs, laser discs, optical discs, digital versatile discs, Blu-ray discs, etc.), magnetic disk storage media, or other magnetic storage devices, or any other medium that can be used to carry or store the desired program code in the form of instructions or data structures and can be accessed by a computer, but is not limited thereto.

[0165] The memory 303 is used to store the application program code for implementing the solution of the embodiment of the present application, and is controlled by the processor 301 to execute. The processor 301 is used to execute the application program code stored in the memory 303 to implement the content shown in the foregoing method embodiments.

[0166] Among them, the electronic device includes but is not limited to: mobile terminals such as mobile phones, laptop computers, digital broadcast receivers, PDAs (Personal Digital Assistants), PADs (Tablet Computers), PMPs (Portable Multimedia Players), in-vehicle terminals (such as in-vehicle navigation terminals), etc., and fixed terminals such as digital TVs, desktop computers, etc. Figure 3 The electronic device shown is only an example and should not bring any limitations to the functions and usage scopes of the embodiments of the present application.

[0167] Next, a computer-readable storage medium provided by the embodiments of the present application will be introduced. The computer-readable storage medium described below can be mutually corresponding and referred to with the method described above.

[0168] An embodiment of the present application provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps of the above-mentioned wafer die detection method are implemented.

[0169] Since the embodiments of the computer-readable storage medium part correspond to the embodiments of the method part, for the descriptions of the embodiments of the computer-readable storage medium part, please refer to the descriptions of the embodiments of the method part.

[0170] It should be understood that although the steps in the flowchart of the accompanying drawings are shown in sequence according to the indication of the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise clearly stated in this article, the execution of these steps has no strict order limitation, and they can be executed in other orders. Moreover, at least a part of the steps in the flowchart of the accompanying drawings may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily executed at the same moment, but can be executed at different moments. Their execution order is not necessarily sequential, but can be executed alternately or in turn with at least a part of other steps or sub-steps or stages of other steps.

[0171] The above are only some implementation manners of the present application. It should be noted that for those of ordinary skill in the art, without departing from the principle of the present application, several improvements and refinements can be made, and these improvements and refinements should also be regarded as the protection scope of the present application.

Claims

1. A method for detecting a wafer die, characterized in that, Including: Obtain the image of the wafer to be detected and the size information of the wafer to be detected, where the wafer to be detected includes a plurality of dielets; Based on the image of the wafer to be detected, determine the dielet position information corresponding to each dielet on the wafer to be detected, and based on all the dielet position information, determine the total dielet quantity information, the distance information between adjacent dielets, the number of dielets in the starting row, the number of dielets in the ending row, the number of dielets in the starting column, and the number of dielets in the ending column; Based on the number of dielets in the starting row, the number of dielets in the ending row, the number of dielets in the starting column, and the number of dielets in the ending column, determine the arrangement pattern; According to the distance information and the arrangement pattern, determine the detection method; and according to the size information of the wafer to be detected and the total dielet quantity information, determine the number of probes; Detect the wafer to be detected according to the detection method and the number of probes to obtain a detection result; The determining the arrangement pattern based on the number of dielets in the starting row, the number of dielets in the ending row, the number of dielets in the starting column, and the number of dielets in the ending column includes: Judge whether the number of dielets in the starting row is the same as the number of dielets in the ending row, and judge whether the number of dielets in the starting column is the same as the number of dielets in the ending column; If the number of dielets in the starting row is the same as the number of dielets in the ending row, and the number of dielets in the starting column is the same as the number of dielets in the ending column, then determine that the arrangement pattern is a regular rectangular arrangement; Otherwise, determine that the arrangement pattern is an irregular arrangement; The determining the number of probes according to the size information of the wafer to be detected and the total dielet quantity information includes: Judge whether the size information of the wafer to be detected is less than a preset maximum wafer size threshold, and judge whether the total dielet quantity information is less than a preset maximum dielet quantity threshold; If the size information of the wafer to be detected is less than the preset maximum wafer size threshold, or the total dielet quantity information is less than the preset maximum dielet quantity threshold, then determine that the number of probes is a single probe; Otherwise, determine that the number of probes is multiple probes.

2. The method for detecting a wafer die according to claim 1, characterized in that, The determining the detection method according to the distance information and the arrangement pattern includes: According to the distance information, determine that the detection method is interval detection or non-interval detection; according to the arrangement pattern, determine that the detection method is symmetric detection or diagonal detection; If the distance information is that the distance between adjacent dielets is less than a preset maximum dielet distance threshold, and the arrangement pattern is a regular rectangular arrangement, then determine that the detection method is interval symmetric detection; If the distance information is that the distance between adjacent dielets is less than a preset maximum dielet distance threshold, and the arrangement pattern is an irregular arrangement, then determine that the detection method is interval diagonal detection; If the distance information is that the distance between adjacent dielets is not less than a preset maximum dielet distance threshold, and the arrangement pattern is a regular rectangular arrangement, then determine that the detection method is non-interval symmetric detection; If the distance information is that the distance between adjacent dielets is not less than a preset maximum dielet distance threshold, and the arrangement pattern is an irregular arrangement, then determine that the detection method is non-interval diagonal detection.

3. The method for detecting a wafer die according to claim 1, characterized in that, Determine the die position information corresponding to each die on the wafer to be detected based on the wafer image to be detected, including: Input the wafer image to be detected into a pre-trained neural network model to obtain the die position information corresponding to each die.

4. The method for detecting a wafer die according to claim 1, characterized in that, It further includes: Obtain the number of defective dies based on the detection result; Obtain the ratio of the number of defective dies on the wafer to be detected to the preset number of defective dies, and determine the re-inspection times of the wafer after detection according to the corresponding relationship between the ratio and the re-inspection times of the wafer, where the ratio represents the ratio of the difference between the number of defective dies on the wafer to be detected and the preset number of defective dies to the preset number of defective dies; Re-inspect a number of defective dies on the wafer to be detected according to the re-inspection times.

5. The method for detecting a wafer die according to claim 1, characterized in that, Before obtaining the detection result by detecting the wafer to be detected according to the detection method and the number of probes, it further includes: Obtain the preset detection time of the wafer to be detected; Based on the preset detection time, the number of dies, and the number of probes of the wafer to be detected, obtain the detection time of each probe.

6. A wafer detection device, characterized in that, For implementing the method according to any one of claims 1-5, the device includes: A first acquisition module for acquiring the wafer image to be detected of the wafer to be detected and the size information of the wafer to be detected, where the wafer to be detected includes a plurality of dies; A first determination module for determining the die position information corresponding to each die on the wafer to be detected based on the wafer image to be detected, and determining the total die information, the distance information between adjacent dies, the number of dies in the starting row, the number of dies in the ending row, the number of dies in the starting column, and the number of dies in the ending column based on all die position information; An arrangement mode determination module for determining the arrangement mode according to the number of dies in the starting row, the number of dies in the ending row, the number of dies in the starting column, and the number of dies in the ending column; A detection method determination module for determining the detection method according to the distance information and the arrangement mode; and determining the number of probes according to the size information of the wafer to be detected and the total die information; An acquisition detection result module for detecting the wafer to be detected according to the detection method and the number of probes to obtain a detection result.

7. An electronic device, characterized in that, It includes: At least one processor; A memory; At least one application program, where at least one application program is stored in the memory and is configured to be executed by at least one processor, and the at least one application program is configured to: execute the method according to any one of claims 1-5.

8. A computer-readable storage medium, characterized in that, Store a computer program that can be loaded and executed by a processor to execute any one of the methods in claims 1 to 5.

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