A semiconductor energy conversion bridge and its preparation method
By optimizing the structure and materials of the semiconductor transducer bridge, the problems of high cost, low energy utilization and short life are solved, higher energy output, longer life and lower reverse leakage current are achieved, packaging costs are reduced, and stability and safety in humid environments are improved.
Patent Information
- Application Number
- CN202310078880.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-02-03
- Publication Date
- 2025-09-09
- Estimated Expiration
- 2043-02-03
AI Technical Summary
Existing semiconductor transducer bridges have disadvantages such as high cost, low energy utilization and short life. They are also prone to misfire in humid environments and easily fire during collisions, posing a safety hazard.
A semiconductor transducer bridge structure was designed, including an insulating substrate, a doped layer, a thin oxide layer, a silicon nitride layer, a metal pad, and a metal welding layer. By setting the positions and concentrations of the P-type lightly doped region, the P-type heavily doped region, and the N-type heavily doped region, the electric field distribution was optimized to increase energy output and reduce reverse leakage current. Polycrystalline silicon material was used to reduce costs.
It achieves higher energy output, longer life and lower reverse leakage current, reduces packaging costs, improves energy utilization efficiency, and works stably in humid environments, avoiding safety hazards.
Smart Images
Figure CN116086259B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of semiconductor devices, and in particular to a semiconductor transducer bridge and a preparation method thereof. Background Art
[0002] Igniters are widely used in both military and civilian applications, such as missiles, bombs, and detonator fuses. These applications are complex and require the ability to operate in harsh environments such as underwater, in extreme cold, and under electromagnetic interference. Traditional igniters typically use gunpowder ignition or impact ignition. However, ignition-type igniters are prone to misfire in humid environments, while impact-type igniters are prone to misfire due to accidental collisions, which can easily cause safety accidents and, in severe cases, even casualties.
[0003] The semiconductor transducer bridge is a new type of solid-state igniter. It is a solid-state semiconductor component that converts low-voltage electrical energy into a strong electric field, generating a gas plasma discharge that ignites the gunpowder. It offers advantages such as a low misfire rate and resistance to collisions, significantly reducing the safety risks associated with traditional igniters. However, current semiconductor transducer bridges have drawbacks such as high cost, low energy efficiency, and a short lifespan. Summary of the Invention
[0004] In view of this, an embodiment of the present invention provides a semiconductor transducer bridge and a method for manufacturing the same, to solve or partially solve the above problems.
[0005] An embodiment of the present application provides a semiconductor transducer bridge, comprising:
[0006] Insulating substrate;
[0007] A doping layer is provided above the insulating substrate, the doping layer comprising a P-type lightly doped region, a P-type heavily doped region, and an N-type heavily doped region, the P-type heavily doped region being provided on both sides of the P-type lightly doped region, and the N-type heavily doped region being provided on both sides of the P-type heavily doped region;
[0008] a thin oxide layer disposed above the doped layer;
[0009] a silicon nitride layer disposed above the thin oxide layer;
[0010] A metal bonding point is provided above the silicon nitride layer, wherein a lower portion of the metal bonding point contacts the N-type heavily doped layer;
[0011] The metal welding layer is arranged below the insulating substrate.
[0012] The beneficial effects of the above embodiments are: first, when the device breaks down, the depletion layer mainly occurs in the P-type heavily doped region. Since the collision ionization coefficient of the P-type region is much lower than the collision ionization coefficient of the N-type region under the same electric field conditions, the device with the P-type region as the main depletion region can withstand a higher voltage at the same current density, so the P-type depletion-type device can provide higher energy to the outside; secondly, the P-type heavily doped region and the P-type lightly doped region are both arranged above the insulating substrate, which can significantly reduce the reverse leakage current of the device, thereby increasing the working life of the device; in addition, the P-type heavily doped region is located on both sides of the P-type lightly doped region, achieving structural symmetry. When packaging the device, there is no need to distinguish between positive and negative poles, which is conducive to improving packaging efficiency and reducing costs.
[0013] Based on the above embodiments, the present application can be further improved as follows:
[0014] In one embodiment of the present application, the concentration of the P-type lightly doped region is 1×10 14 ~1×10 16 cm -3 The concentration of the P-type heavily doped region is 1×10 16 ~1×10 18 cm -3 The lower concentration of the P-type lightly doped region is conducive to forming a uniform electric field strength, and the concentration of the P-type heavily doped region plays a role in coarsely adjusting the ignition voltage, which can be easily controlled within the range of 5 to 30V.
[0015] In one embodiment of the present application, the width of the P-type lightly doped region is 5-15 μm and the thickness is 0.5-5.0 μm. The width of 5-15 μm can fine-tune the firing voltage, and the thickness of 0.5-5.0 μm is conducive to improving the consistency of the firing voltage.
[0016] In one embodiment of the present application, the concentration of the N-type heavily doped region is 1×10 18 ~1×10 20 cm -3 The N-type heavily doped region with the corresponding concentration reduces the equivalent series resistance, which is beneficial to improving the energy utilization efficiency.
[0017] In one embodiment of the present application, the P-type lightly doped region is made of polysilicon. Polysilicon has good process compatibility, a high melting point, and low cost, which is conducive to manufacturing products with stable ignition and competitive prices.
[0018] The present application also provides a method for preparing the semiconductor transducer bridge, comprising the following steps:
[0019] S1: depositing the P-type lightly doped region on the insulating substrate;
[0020] S2: depositing an oxide layer on the P-type lightly doped region;
[0021] S3: forming a doping window by photolithography, etching, and stripping;
[0022] S4: forming the P-type heavily doped region by implantation and annealing;
[0023] S5: forming the N-type heavily doped region by implantation and annealing;
[0024] S6: removing the oxide layer on the surface;
[0025] S7: forming the thin oxide layer by oxidation;
[0026] S8: forming the silicon nitride layer on the thin oxide layer by deposition;
[0027] S9: forming a metal contact window by photolithography, etching, and stripping;
[0028] S10: evaporating a metal layer on the silicon nitride layer;
[0029] S11: forming the metal bonding point by photolithography, etching, and debonding;
[0030] S12: forming the metal soldering layer below the insulating substrate by backside evaporation.
[0031] One or more technical solutions provided in the embodiments of this application have at least the following technical effects or advantages:
[0032] 1. The P-type depletion-mode device of this semiconductor energy conversion bridge can provide higher energy to the outside with low reverse leakage current and long service life. In addition, its P-type heavily doped region is located on both sides of the P-type lightly doped region, thereby improving packaging efficiency.
[0033] 2. The lower concentration of the P-type lightly doped region of the semiconductor transducer bridge is conducive to forming a uniform electric field strength, and the concentration of the P-type heavily doped region plays a role in coarsely adjusting the ignition voltage, which can be conveniently controlled within the range of 5 to 30V;
[0034] 3. The width setting of the P-type lightly doped region of the semiconductor transducer bridge can fine-tune the firing voltage, and the thickness setting is conducive to improving the consistency of the firing voltage;
[0035] 4. The concentration of the N-type heavily doped region of the semiconductor transducer bridge is 1×10 18 ~1×10 20 cm -3 , thereby reducing the equivalent series resistance, which is beneficial to improving energy utilization efficiency;
[0036] 5. The P-type lightly doped region of the semiconductor transducer bridge is made of polysilicon, which has stable ignition and low cost. BRIEF DESCRIPTION OF THE DRAWINGS
[0037] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly describes the drawings required for the specific embodiments or the description of the prior art. Similar elements or parts are generally identified by similar reference numerals throughout the drawings. Elements or parts in the drawings are not necessarily drawn to scale.
[0038] Figure 1 This is a schematic structural diagram of a semiconductor energy conversion bridge according to the present invention;
[0039] Figure 2 Schematic top view of the doped layer.
[0040] Among them, 1. insulating substrate, 2. P-type lightly doped region, 3. P-type heavily doped region, 4. N-type heavily doped region, 5. thin oxide layer, 6. silicon nitride layer, 7. metal bonding point, 8. metal welding layer. DETAILED DESCRIPTION
[0041] The present invention will be further explained below in conjunction with specific embodiments. It should be understood that these embodiments are only used to illustrate the present invention and are not used to limit the scope of the present invention. After reading the present invention, modifications of various equivalent forms of the present invention made by those skilled in the art all fall within the scope defined by the claims attached to this application.
[0042] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.
[0043] In the description of the present invention, it should be noted that the orientations or positional relationships indicated by terms such as "vertical" and "peripheral surface" are based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the inventive product is usually placed when in use. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limitations on the present invention.
[0044] In the description of the present invention, it should also be noted that, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; they may refer to mechanical connections or electrical connections; they may refer to direct connections or indirect connections through an intermediate medium; and they may refer to internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.
[0045] In the description of the present invention, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. In addition, those skilled in the art may combine and combine different embodiments or examples described in the present invention, as well as features of different embodiments or examples, without any contradiction.
[0046] Example 1:
[0047] like Figure 1-2 As shown, a semiconductor transducer bridge includes: an insulating substrate 1, a doping layer, a thin oxide layer 5, a silicon nitride layer 6, a metal bonding pad 7 and a metal welding layer 8, wherein the doping layer includes a P-type lightly doped region 2, a P-type heavily doped region 3, and an N-type heavily doped region 4.
[0048] A P-type lightly doped region 2 is arranged above an insulating substrate 1, a P-type heavily doped region 3 is arranged in the P-type lightly doped region 2 and is located on both sides of the P-type lightly doped region 2, and an N-type heavily doped region 4 is arranged in the P-type heavily doped region 3 and is located on both sides of the P-type heavily doped region 3; a thin oxide layer 5 is arranged above the doping layer; a silicon nitride layer 6 is arranged above the thin oxide layer 5; a metal bonding point 7 is arranged above the silicon nitride layer 6, and the lower part of the metal bonding point 7 is in contact with the N-type heavily doped layer; a metal welding layer 8 is arranged below the insulating substrate 1.
[0049] Furthermore, the concentration of the P-type lightly doped region 2 is 1×10 14 ~1×10 16 cm -3 , the concentration of P-type heavily doped region 3 is 1×10 16 ~1×10 18 cm -3 .
[0050] Furthermore, the width of the P-type lightly doped region 2 is 5-15 μm, and the thickness is 0.5-5.0 μm.
[0051] Furthermore, the concentration of the N-type heavily doped region 4 is 1×10 18 ~1×10 20 cm -3 .
[0052] Furthermore, the materials of the P-type lightly doped region 2 , the P-type heavily doped region 3 , and the N-type heavily doped region 4 are all polysilicon.
[0053] Furthermore, the doping impurities of the P-type lightly doped region 2 and the P-type heavily doped region 3 are boron, and the doping impurities of the N-type heavily doped region 4 are phosphorus or arsenic.
[0054] Example 2:
[0055] A kind of Figure 1 The method for preparing the semiconductor transducer bridge shown includes the following steps:
[0056] S1: depositing a P-type lightly doped region 2 on an insulating substrate 1;
[0057] S2: depositing an oxide layer on the P-type lightly doped region 2;
[0058] S3: forming a doping window by photolithography, etching, and stripping;
[0059] S4: forming a P-type heavily doped region 3 by implantation and annealing;
[0060] S5: forming an N-type heavily doped region 4 by implantation and annealing;
[0061] S6: remove the surface oxide layer;
[0062] S7: forming a thin oxide layer 5 by oxidation;
[0063] S8: forming a silicon nitride layer 6 on the thin oxide layer 5 by deposition;
[0064] S9: forming a metal contact window by photolithography, etching, and stripping;
[0065] S10: forming a metal layer by evaporation on the silicon nitride layer 6;
[0066] S11: forming a metal bonding pad 7 by photolithography, etching, and debonding;
[0067] S12: A metal soldering layer 8 is formed below the insulating substrate 1 by backside evaporation.
[0068] The technical solutions in the above embodiments of the present application have at least the following technical effects or advantages:
[0069] 1. The P-type depletion-mode device of this semiconductor energy conversion bridge can provide higher energy to the outside with low reverse leakage current and long service life. In addition, its P-type heavily doped region is located on both sides of the P-type lightly doped region, thereby improving packaging efficiency.
[0070] 2. The lower concentration of the P-type lightly doped region of the semiconductor transducer bridge is conducive to forming a uniform electric field strength, and the concentration of the P-type heavily doped region plays a role in coarsely adjusting the ignition voltage, which can be conveniently controlled within the range of 5 to 30V;
[0071] 3. The width setting of the P-type lightly doped region of the semiconductor transducer bridge can fine-tune the firing voltage, and the thickness setting is conducive to improving the consistency of the firing voltage;
[0072] 4. The concentration of the N-type heavily doped region of the semiconductor transducer bridge is 1×10 18 ~1×10 20 cm -3 , thereby reducing the equivalent series resistance, which is beneficial to improving energy utilization efficiency;
[0073] 5. The P-type lightly doped region of the semiconductor transducer bridge is made of polysilicon, which has stable ignition and low cost.
[0074] Although the embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and are not to be construed as limitations on the present invention. A person skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention.
Claims
1. A semiconductor transducer bridge, characterized in that: include: Insulating substrate; A doping layer is provided above the insulating substrate, the doping layer comprising a P-type lightly doped region, a P-type heavily doped region, and an N-type heavily doped region. The P-type heavily doped region is provided on both sides of the P-type lightly doped region, and the N-type heavily doped region is provided on both sides of the P-type heavily doped region. The P-type heavily doped region is used to adjust the firing voltage. The concentration of the P-type lightly doped region is 1×10 14 ~1×10 16 cm -3 The width of the P-type lightly doped region is 5-15 μm, the thickness is 0.5-5.0 μm, and the concentration of the P-type heavily doped region is 1×10 16 ~1×10 18 cm -3 The concentration of the N-type heavily doped region is 1×10 18 ~1×10 20 cm -3 ; a thin oxide layer disposed above the doped layer; a silicon nitride layer disposed above the thin oxide layer; A metal bonding point is provided above the silicon nitride layer, wherein a lower portion of the metal bonding point contacts the N-type heavily doped layer; The metal welding layer is arranged below the insulating substrate.
2. The semiconductor transducer bridge according to claim 1, characterized in that: The material of the P-type lightly doped region is polysilicon.
3. The semiconductor transducer bridge according to claim 2, characterized in that: The doping impurities of the P-type lightly doped region and the P-type heavily doped region are boron, and the doping impurities of the N-type heavily doped region are phosphorus or arsenic.
4. A method for preparing a semiconductor transducer bridge according to any one of claims 1 to 3, comprising the following steps: S1: depositing the P-type lightly doped region on the insulating substrate; S2: depositing an oxide layer on the P-type lightly doped region; S3: forming a doping window by photolithography, etching, and stripping; S4: forming the P-type heavily doped region by implantation and annealing; S5: forming the N-type heavily doped region by implantation and annealing; S6: removing the oxide layer on the surface; S7: forming the thin oxide layer by oxidation; S8: forming the silicon nitride layer on the thin oxide layer by deposition; S9: forming a metal contact window by photolithography, etching, and stripping; S10: evaporating a metal layer on the silicon nitride layer; S11: forming the metal bonding pad by photolithography, etching, and debonding; S12: forming the metal soldering layer below the insulating substrate by backside evaporation.