High-frequency module and communication device

Abstract

A high-frequency module (1A) comprises a module substrate (91) having main surfaces (91a and 91b), a first circuit component arranged on the main surface (91a), a second circuit component arranged on the main surface (91b), an external connection terminal (150) arranged on the main surface (91b), and a metal shielding plate (81) vertically arranged on the main surface (91b) and set to a ground potential, wherein the external connection terminal (150) includes a first external connection terminal for inputting or outputting a first high-frequency signal and a second external connection terminal for inputting or outputting any one of a power supply signal, a control signal and a second high-frequency signal, a recess (81z) is formed at an end of the metal shielding plate (81), and when the module substrate (91) is viewed from above, the metal shielding plate (81) is arranged between the first external connection terminal and the second external connection terminal or between the second external connection terminal and the second circuit component.

Description

Technical Field

[0001] The present invention relates to a high-frequency module and a communication device. Background Art

[0002] In mobile communication devices such as cellular phones, the arrangement structure of circuit elements constituting high-frequency front-end circuits has become increasingly complex, particularly with the advancement of multi-band communication.

[0003] Patent Document 1 discloses a circuit structure for a transceiver (transmitting and receiving circuit) comprising multiple transmitters (transmitting paths) and multiple receivers (receiving paths), and a switchplexer (antenna switch) disposed between the multiple transmitters and receivers and an antenna. Each of the multiple transmitters includes a transmitting circuit, a PA (transmitting power amplifier), and an output circuit, while each of the multiple receivers includes a receiving circuit, an LNA (receiving low-noise amplifier), and an input circuit. The output circuit includes a transmitting filter, an impedance matching circuit, and a duplexer, while the input circuit includes a receiving filter, an impedance matching circuit, and a duplexer. This structure enables simultaneous transmission, simultaneous reception, or simultaneous transmission and reception by switching the switchplexer.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application No. 2014-522216 Summary of the Invention

[0007] Problems to be solved by the invention

[0008] However, when the transceiver (transceiver circuit) disclosed in Patent Document 1 is constructed from a high-frequency module mounted on a mobile communication device, it is conceivable that electromagnetic field coupling occurs between at least two of the multiple circuit components and multiple connection terminals, each configured in the transmission path, the reception path, and the transmission path including the antenna switch. In this case, the harmonic components of the high-output transmission signal amplified by the PA (transmit power amplifier) sometimes overlap with the transmission signal, degrading the quality of the transmission signal. In addition, the isolation between the transmitter and receiver sometimes decreases due to the above-mentioned electromagnetic field coupling, and unwanted waves such as the above-mentioned harmonics or intermodulation distortion between the transmission signal and other high-frequency signals flow into the reception path, thereby degrading the reception sensitivity. In addition, the two received signals sometimes interfere with each other due to the above-mentioned electromagnetic field coupling, degrading the reception sensitivity.

[0009] The present invention has been made to solve the above-mentioned problem, and an object of the present invention is to provide a high-frequency module and a communication device that suppress degradation in the quality of a transmission signal or a reception signal.

[0010] Technical solutions to solve problems

[0011] One embodiment of the present invention relates to a high-frequency module comprising a module substrate having a first main surface and a second main surface opposing each other, a first circuit component arranged on the first main surface, a second circuit component arranged on the second main surface, a plurality of external connection terminals arranged on the second main surface, and a metal shield plate provided upright on the second main surface and in a direction perpendicular to the second main surface and set to a ground potential, the plurality of external connection terminals including a first external connection terminal for inputting or outputting a first high-frequency signal and a second external connection terminal for inputting or outputting any one of a power supply signal, a control signal, and a second high-frequency signal, a recess being formed in at least one of the vertically opposing ends of the metal shield plate, and the metal shield plate being arranged between the first external connection terminal and the second external connection terminal or between the second external connection terminal and the second circuit component when the module substrate is viewed from above.

[0012] Effects of the Invention

[0013] According to the present invention, a high-frequency module and a communication device can be provided in which degradation in the quality of a transmission signal or a reception signal is suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a circuit configuration diagram of a high-frequency module and a communication device according to an embodiment.

[0015] Figure 2A 1 is a top view of a high-frequency module according to an embodiment.

[0016] Figure 2B is a cross-sectional view of a high-frequency module according to an embodiment.

[0017] Figure 3A This is a perspective view showing the appearance of a first example of a metal shield plate.

[0018] Figure 3B This is a perspective view showing the appearance of a second example of a metal shield plate.

[0019] Figure 3C This is a perspective view showing the appearance of a third example of the metal shield plate. DETAILED DESCRIPTION

[0020] Hereinafter, the embodiments of the present invention will be described in detail. In addition, the embodiments described below show general or specific examples. In addition, the numerical values, shapes, materials, components, configurations of components, and connection methods shown in the following embodiments, examples, and modifications are examples, and their purpose is not to limit the present invention. In addition, among the components in the following embodiments and modifications, the components that are not described in the independent claims are described as arbitrary components. In addition, the sizes or size ratios of the components shown in the drawings are not necessarily rigorous. In the figures, the same figure marks are marked for substantially the same structures, and repeated descriptions are sometimes omitted or simplified.

[0021] In the following, terms such as parallel and perpendicular that indicate the relationship between elements, terms such as rectangular that indicate the shape of an element, and numerical ranges do not have strict meanings but mean substantially equivalent ranges, for example, including differences of several percent.

[0022] In the following figures, the x-axis and y-axis are mutually orthogonal axes on a plane parallel to the main surface of the module substrate. Furthermore, the z-axis is an axis perpendicular to the main surface of the module substrate, with its positive direction indicating upward and its negative direction indicating downward.

[0023] In the circuit structure of the present disclosure, the term "connected" includes not only direct connection via connection terminals and / or wiring conductors, but also electrical connection via other circuit components. Furthermore, the term "connected between A and B" means connection between A and B and both A and B.

[0024] In addition, in the module structure disclosed in the present invention, the so-called "looking down" means observing the object by orthographic projection from the positive side of the z-axis to the xy plane. The so-called "components are arranged on the main surface of the substrate", in addition to the components being arranged on the main surface in a state of contact with the main surface of the substrate, also includes the components being arranged above the main surface without contact with the main surface, and the components being arranged by embedding a part of the component into the substrate from the main surface side. The so-called "A is arranged between B and C" means that at least one of the multiple line segments connecting an arbitrary point in B and an arbitrary point in C passes through A. In addition, terms such as "parallel" and "perpendicular" that indicate the relationship between elements, and terms such as "rectangular" that indicate the shape of an element do not only have strict meanings, but also mean a substantially equivalent range, for example, including an error of several percent.

[0025] In the following, the term "transmit path" refers to a transmission line consisting of wiring that transmits high-frequency transmit signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes. Furthermore, the term "receive path" refers to a transmission line consisting of wiring that transmits high-frequency receive signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes. Furthermore, the term "transmit / receive path" refers to a transmission line consisting of wiring that transmits both high-frequency transmit and receive signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes.

[0026] (Implementation Method)

[0027] [1. Circuit Configuration of High-Frequency Module 1 and Communication Device 5]

[0028] Figure 1 1 is a circuit diagram of a high-frequency module 1 and a communication device 5 according to an embodiment. As shown in the figure, the communication device 5 includes a high-frequency module 1, an antenna 2, an RF signal processing circuit (RFIC) 3, and a baseband signal processing circuit (BBIC) 4.

[0029] RFIC3 is an RF signal processing circuit that processes high-frequency signals transmitted and received by antenna 2. Specifically, RFIC3 processes high-frequency receive signals input via the receive signal path of high-frequency module 1 through down-conversion and other means, and outputs the resulting receive signals to BBIC4. RFIC3 also processes transmit signals input from BBIC4 through up-conversion and other means, and outputs the resulting high-frequency transmit signals to the transmit signal path of high-frequency module 1.

[0030] BBIC 4 is a circuit that performs signal processing using an intermediate frequency band lower than the high-frequency signal propagating through high-frequency module 1. The signal processed by BBIC 4 is used, for example, as an image signal for image display or as an audio signal for communication via a speaker.

[0031] RFIC3 also functions as a control unit that controls the connection of switches 51, 52, 53, 54, and 55 of high-frequency module 1 based on the communication frequency band used. Specifically, RFIC3 switches the connection of switches 51 to 55 of high-frequency module 1 based on a control signal (not shown). Alternatively, the control unit may be provided external to RFIC3, for example, within high-frequency module 1 or BBIC4.

[0032] The antenna 2 is connected to the antenna connection terminal 100 of the high-frequency module 1 , radiates a high-frequency signal output from the high-frequency module 1 , and receives a high-frequency signal from the outside and outputs the signal to the high-frequency module 1 .

[0033] In addition, in the communication device 5 according to the present embodiment, the antenna 2 and the BBIC 4 are not essential components.

[0034] Next, the detailed structure of the high-frequency module 1 will be described.

[0035] like Figure 1 As shown, the high-frequency module 1 includes power amplifiers 11 and 12, low-noise amplifiers 21 and 22, transmit filters 61T, 62T, 63T, and 64T, receive filters 61R, 62R, 63R, and 64R, an output matching circuit 30, an input matching circuit 40, matching circuits 71, 72, 73, and 74, switches 51, 52, 53, 54, and 55, a power supply circuit 76, and a control circuit 77.

[0036] The antenna connection terminal 100 is connected to the antenna 2 .

[0037] The power amplifier 11 is a first power amplifier that amplifies high-frequency signals in communication band A (first communication band) and communication band B, which belong to the first frequency band group. The input terminal of the power amplifier 11 is connected to the transmit input terminal 111, and the output terminal of the power amplifier 11 is connected to the matching circuit 31. Furthermore, the power amplifier 12 is a second power amplifier that amplifies high-frequency signals in communication band C (second communication band) and communication band D, which belong to the second frequency band group, which is lower in frequency than the first frequency band group. The input terminal of the power amplifier 12 is connected to the transmit input terminal 112, and the output terminal of the power amplifier 12 is connected to the matching circuit 32.

[0038] The low-noise amplifier 21 is a first low-noise amplifier that amplifies high-frequency signals in communication bands A and B with low noise. The input terminal of the low-noise amplifier 21 is connected to the matching circuit 41, and the output terminal of the low-noise amplifier 21 is connected to the reception output terminal 121. Furthermore, the low-noise amplifier 22 is a second low-noise amplifier that amplifies high-frequency signals in communication bands C and D with low noise. The input terminal of the low-noise amplifier 22 is connected to the matching circuit 42, and the output terminal of the low-noise amplifier 22 is connected to the reception output terminal 122.

[0039] The transmission filter 61T is arranged in the transmission path AT connecting the power amplifier 11 and the switch 55, and allows the transmission signal in the transmission band of communication frequency band A, among the transmission signals amplified by the power amplifier 11, to pass through. Furthermore, the transmission filter 62T is arranged in the transmission path BT connecting the power amplifier 11 and the switch 55, and allows the transmission signal in the transmission band of communication frequency band B, among the transmission signals amplified by the power amplifier 11, to pass through. Furthermore, the transmission filter 63T is arranged in the transmission path CT connecting the power amplifier 12 and the switch 55, and allows the transmission signal in the transmission band of communication frequency band C, among the transmission signals amplified by the power amplifier 12, to pass through. Furthermore, the transmission filter 64T is arranged in the transmission path DT connecting the power amplifier 12 and the switch 55, and allows the transmission signal in the transmission band of communication frequency band D, among the transmission signals amplified by the power amplifier 12, to pass through.

[0040] The receive filter 61R is arranged in the receive path AR connecting the low-noise amplifier 21 and the switch 55, and passes received signals in the receive band of communication frequency band A among received signals input from the antenna connection terminal 100. Furthermore, the receive filter 62R is arranged in the receive path BR connecting the low-noise amplifier 21 and the switch 55, and passes received signals in the receive band of communication frequency band B among received signals input from the antenna connection terminal 100. Furthermore, the receive filter 63R is arranged in the receive path CR connecting the low-noise amplifier 22 and the switch 55, and passes received signals in the receive band of communication frequency band C among received signals input from the antenna connection terminal 100. Furthermore, the receive filter 64R is arranged in the receive path DR connecting the low-noise amplifier 22 and the switch 55, and passes received signals in the receive band of communication frequency band D among received signals input from the antenna connection terminal 100.

[0041] The transmission filters 61T to 64T and the reception filters 61R to 64R may be, for example, surface acoustic wave filters, elastic wave filters using BAW (Bulk Acoustic Wave), LC resonant filters, and dielectric filters, but are not limited thereto.

[0042] The transmit filter 61T and the receive filter 61R constitute a duplexer 61 having a passband in the communication frequency band A. Furthermore, the transmit filter 62T and the receive filter 62R constitute a duplexer 62 having a passband in the communication frequency band B. Furthermore, the transmit filter 63T and the receive filter 63R constitute a duplexer 63 having a passband in the communication frequency band C. Furthermore, the transmit filter 64T and the receive filter 64R constitute a duplexer 64 having a passband in the communication frequency band D.

[0043] The output matching circuit 30 includes matching circuits 31 and 32. Matching circuit 31 is disposed in the transmission path connecting the power amplifier 11 and the transmission filters 61T and 62T, and achieves impedance matching between the power amplifier 11 and the transmission filters 61T and 62T. Matching circuit 32 is disposed in the transmission path connecting the power amplifier 12 and the transmission filters 63T and 64T, and achieves impedance matching between the power amplifier 12 and the transmission filters 63T and 64T.

[0044] Input matching circuit 40 includes matching circuits 41 and 42. Matching circuit 41 is disposed in the reception path connecting low-noise amplifier 21 and reception filters 61R and 62R, achieving impedance matching between low-noise amplifier 21 and reception filters 61R and 62R. Matching circuit 42 is disposed in the reception path connecting low-noise amplifier 22 and reception filters 63R and 64R, achieving impedance matching between low-noise amplifier 22 and reception filters 63R and 64R.

[0045] Switch 51 is located in the transmission path connecting matching circuit 31 and transmission filters 61T and 62T, and switches between the connection between power amplifier 11 and transmission filter 61T, and between the connection between power amplifier 11 and transmission filter 62T. Switch 52 is located in the transmission path connecting matching circuit 32 and transmission filters 63T and 64T, and switches between the connection between power amplifier 12 and transmission filter 63T, and between the connection between power amplifier 12 and transmission filter 64T. Switch 53 is located in the reception path connecting matching circuit 41 and reception filters 61R and 62R, and switches between the connection between low-noise amplifier 21 and reception filter 61R, and between the connection between low-noise amplifier 21 and reception filter 62R. Switch 54 is located in the reception path connecting matching circuit 42 and reception filters 63R and 64R, and switches between the connection between low-noise amplifier 22 and reception filter 63R, and between the connection between low-noise amplifier 22 and reception filter 64R.

[0046] Switch 55 is a first switch disposed in a signal path connecting antenna connection terminal 100 to transmission filters 61T to 64T and reception filters 61R to 64R. Switch 55 switches between (1) the connection between antenna connection terminal 100 and transmission filter 61T and reception filter 61R, (2) the connection between antenna connection terminal 100 and transmission filter 62T and reception filter 62R, (3) the connection between antenna connection terminal 100 and transmission filter 63T and reception filter 63R, and (4) the connection between antenna connection terminal 100 and transmission filter 64T and reception filter 64R. Switch 55 is configured as a multi-connection type switch circuit capable of simultaneously performing two or more of the connections (1) to (4).

[0047] Matching circuit 71 is located in the path connecting switch 55 to transmit filter 61T and receive filter 61R, achieving impedance matching between antenna 2, switch 55, transmit filter 61T, and receive filter 61R. Matching circuit 72 is located in the path connecting switch 55 to transmit filter 62T and receive filter 62R, achieving impedance matching between antenna 2, switch 55, transmit filter 62T, and receive filter 62R. Matching circuit 73 is located in the path connecting switch 55 to transmit filter 63T and receive filter 63R, achieving impedance matching between antenna 2, switch 55, transmit filter 63T, and receive filter 63R. Matching circuit 74 is located in the path connecting switch 55 to transmit filter 64T and receive filter 64R, achieving impedance matching between antenna 2, switch 55, transmit filter 64T, and receive filter 64R.

[0048] The matching circuits 71 to 74 are not essential components of the high-frequency module according to the present invention. In place of the matching circuits 71 to 74 , a matching circuit may be provided on the transmission / reception path ETR connecting the antenna connection terminal 100 and the switch 55 .

[0049] Power supply circuit 76 is connected to power supply terminal 131. Power supply circuit 76 receives power from a power supply (not shown) via power supply terminal 131 and outputs a power supply signal to at least one of switches 51 to 55, power amplifiers 11 and 12, and low-noise amplifiers 21 and 22. Power supply circuit 76 may also output a power supply signal to other electronic components.

[0050] The power signal is a signal for supplying power to the electronic components included in the high-frequency module 1. For example, the power signal is a signal for supplying a power supply voltage and / or a bias current to the power amplifiers 11 and 12. Alternatively, the power signal may be a signal for supplying driving power to the switches 51 to 55.

[0051] The control circuit 77 is connected to the control terminal 132. The control circuit 77 receives a control signal from the RFIC 3 via the control terminal 132 and outputs the control signal to at least one of the switches 51 to 55, the power amplifiers 11 and 12, and the low-noise amplifiers 21 and 22. The control circuit 77 may also output the control signal to other electronic components.

[0052] The control signal is a signal for controlling electronic components included in the high-frequency module 1. Specifically, the control signal is a digital signal for controlling at least one of the power amplifiers 11 and 12, the low-noise amplifiers 21 and 22, and the switches 51 to 55.

[0053] In the configuration of the high-frequency module 1 described above, the power amplifier 11, matching circuit 31, switch 51, and transmit filters 61T and 62T constitute a first transmission circuit that outputs transmission signals in communication bands A and B toward the antenna connection terminal 100. Furthermore, the power amplifier 12, matching circuit 32, switch 52, and transmit filters 63T and 64T constitute a second transmission circuit that outputs transmission signals in communication bands C and D toward the antenna connection terminal 100. The first and second transmission circuits together constitute a transmission circuit that outputs transmission signals in communication bands A to D toward the antenna connection terminal 100.

[0054] Furthermore, the low-noise amplifier 21, matching circuit 41, switch 53, and receive filters 61R and 62R constitute a first receiving circuit that receives signals in communication bands A and B from antenna 2 via antenna connection terminal 100. Furthermore, the low-noise amplifier 22, matching circuit 42, switch 54, and receive filters 63R and 64R constitute a second receiving circuit that receives signals in communication bands C and D from antenna 2 via antenna connection terminal 100. The first receiving circuit and the second receiving circuit constitute a receiving circuit that receives signals in communication bands A to D from antenna connection terminal 100.

[0055] The second transmitting circuit and the second receiving circuit are circuits for transmitting and receiving signals in a communication frequency band belonging to a low-band group, for example. The low-band group is a frequency band group consisting of multiple communication frequency bands corresponding to 4G and 5G, for example, having a frequency range below 1 GHz.

[0056] Furthermore, the first transmitting circuit and the first receiving circuit are circuits for transmitting and receiving signals in, for example, a communication frequency band belonging to a mid-band group. The mid-band group is a frequency band group consisting of multiple communication frequency bands corresponding to 4G and 5G, located higher in frequency than the low-band group, and has a frequency range of, for example, 1.5 to 2.2 GHz.

[0057] Furthermore, the first transmitting circuit and the first receiving circuit may also be circuits that transmit and receive signals in a communication frequency band belonging to a high-band group. The high-band group is a frequency band group consisting of multiple communication frequency bands corresponding to 4G and 5G, located higher in the frequency range than the mid-band group, for example, having a frequency range of 2.4 to 2.8 GHz.

[0058] According to the above-mentioned circuit structure, the high-frequency module 1 involved in this embodiment is capable of performing at least one of simultaneous transmission, simultaneous reception, and simultaneous transmission and reception of high-frequency signals of any one of the communication frequency bands A and B, and high-frequency signals of any one of the communication frequency bands C and D.

[0059] Furthermore, in the high-frequency module according to the present invention, the transmitting circuit and the receiving circuit may be connected to the antenna connection terminal 100 without being connected via the switch 55, and the transmitting circuit and the receiving circuit may be connected to the antenna 2 via different terminals. Furthermore, the circuit configuration of the high-frequency module according to the present invention only requires the inclusion of at least one of the first transmitting circuit, the second transmitting circuit, the first receiving circuit, and the second receiving circuit.

[0060] In a high-frequency module 1 having the aforementioned circuit structure, if electromagnetic field coupling occurs between at least two of the multiple circuit components and multiple connection terminals arranged in the transmit and receive paths, the harmonic components of the high-output transmit signal amplified by the power amplifier may overlap with the transmit signal, degrading the transmit signal quality. Furthermore, electromagnetic field coupling can sometimes reduce the isolation between the transmitter and receiver, allowing unwanted waves such as the harmonics or intermodulation distortion between the transmit signal and other high-frequency signals to flow into the receive path, degrading receive sensitivity. Furthermore, electromagnetic field coupling can sometimes cause two receive signals to interfere with each other, degrading receive sensitivity.

[0061] In contrast, the high-frequency module 1 according to the present embodiment has a structure for suppressing the above-mentioned electromagnetic field coupling. Hereinafter, the structure for suppressing the above-mentioned electromagnetic field coupling of the high-frequency module 1 according to the present embodiment will be described.

[0062] [2. Circuit Component Arrangement Structure of High-Frequency Module 1A According to the Embodiment]

[0063] Figure 2A 1A is a schematic top view of the high frequency module 1A according to the embodiment. Figure 2B is a schematic cross-sectional view of a high-frequency module 1A according to an embodiment, specifically, Figure 2A The cross-sectional view at line IIB-IIB. Figure 2A (a) shows the arrangement of circuit elements when the main surface 91a of the main surfaces 91a and 91b of the module substrate 91 facing each other is viewed from the positive z-axis direction side. Figure 2A (b) shows a perspective view of the arrangement of circuit elements when the main surface 91b is viewed from the positive z-axis direction side.

[0064] The high-frequency module 1A according to the embodiment specifically shows the arrangement structure of each circuit component constituting the high-frequency module 1 according to the embodiment.

[0065] like Figure 2A as well as Figure 2B As shown, the high-frequency module 1A of this embodiment has Figure 1In addition to the circuit structure shown, the module further includes a module substrate 91 , metal shield plates 81 , 82 , and 83 , a metal shield layer 95 , a via conductor 96 , resin members 92 and 93 , and external connection terminals 150 .

[0066] Module substrate 91 is a substrate on which the first and second transmitting circuits and the first and second receiving circuits are mounted on its main surface 91a. For example, a low-temperature co-fired ceramic (LTCC) substrate with a laminated structure of multiple dielectric layers, a high-temperature co-fired ceramic (HTCC) substrate, a component-embedded substrate, a substrate with a redistribution layer (RDL), or a printed circuit board can be used as module substrate 91. Antenna connection terminals 100, transmitting input terminals 111 and 112, and receiving output terminals 121 and 122 may also be formed on module substrate 91.

[0067] Resin member 92 is disposed on main surface 91a of module substrate 91, covering at least a portion of the circuit components constituting the first and second transmitting circuits and the first and second receiving circuits, as well as main surface 91a, and has the function of ensuring the reliability of these circuit components, such as mechanical strength and moisture resistance. Resin member 93 is disposed on main surface 91b of module substrate 91, covering at least a portion of the circuit components constituting the first and second transmitting circuits and the first and second receiving circuits, as well as main surface 91b, and has the function of ensuring the reliability of these circuit components, such as mechanical strength and moisture resistance.

[0068] Matching circuits 31, 32, 41, 42, 71, and 72 each include an inductor and / or a capacitor. Figure 2A In the example, matching circuits 31, 32, 41, and 42 each include both an inductor and a capacitor. On the other hand, matching circuits 71 and 72 each include an inductor but no capacitor. Furthermore, the structures of matching circuits 31, 32, 41, 42, 71, and 72 are not limited to this. For example, matching circuits 31, 32, 41, and 42 may each include no capacitor, while matching circuits 71 and 72 may each include a capacitor.

[0069] The external connection terminals 150 are arranged on the main surface 91b of the module substrate 91. The high-frequency module 1A exchanges electrical signals with an external substrate arranged on the negative side of the z-axis of the high-frequency module 1A via the plurality of external connection terminals 150. Figure 2AAs shown in (b), the plurality of external connection terminals 150 include an antenna connection terminal 100, transmission input terminals 111 and 112, and reception output terminals 121 and 122. In addition, although not shown in the figure, the power supply terminal 131 and the control terminal 132 may also be included in the plurality of external connection terminals 150. In addition, the ground terminal 150g among the plurality of external connection terminals 150 is set to the ground potential of the external substrate. In addition, the ground terminal 150g may also be connected to the ground conductor pattern 94P formed inside the module substrate 91. In addition, the external connection terminal 150 may be as Figure 2B Although the planar electrodes formed on the main surface 91 b are shown, bump electrodes formed on the main surface 91 b may also be used. In addition, when the external connection terminals 150 are bump electrodes, the resin member 93 may not be required.

[0070] In addition, although Figure 2A Not shown in the figure, but Figure 1 The wiring that connects the illustrated circuit components, forming the transmission path, reception path, and transceiver path, is formed within module substrate 91, on main surfaces 91a and 91b. These wirings may be bonding wires whose ends are bonded to main surfaces 91a and 91b or to any of the circuit elements that constitute high-frequency module 1A, or they may be terminals, electrodes, or wiring formed on the surfaces of the circuit elements that constitute high-frequency module 1A.

[0071] The metal shield layer 95 covers the surface of the resin member 92 and is set to ground potential. The metal shield layer 95 is formed by, for example, sputtering. The metal shield layer 95 may be connected to the ground conductor pattern 94P on the side surface of the module substrate 91.

[0072] Via-hole conductor 96 is formed inside module substrate 91 and extends in a direction intersecting main surface 91b. Via-hole conductor 96 is set to the ground potential of high-frequency module 1A. In this embodiment, via-hole conductor 96 extends in a direction perpendicular to main surface 91b.

[0073] The metal shield plates 81, 82, and 83 are metal walls that are erected from the main surface 91b toward the top surface of the resin member 93 on the negative z-axis direction (perpendicular to the main surface 91b) and are set to ground potential. The metal shield plates 81, 82, and 83 are connected to the via conductor 96 on the main surface 91b. The metal shield plates 81, 82, and 83 can be directly connected to the via conductor 96, or they can be connected to the via conductor 96 as shown in the figure. Figure 2B The electrodes are connected via a ground electrode 94 formed on the main surface 91b.

[0074] According to the above structure, the metal shielding plates 81 to 83 are connected to the via-hole conductors 96 set to the ground potential, so the electromagnetic field shielding function is enhanced. Figures 3A to 3C This will be described later.

[0075] like Figure 2A as well as Figure 2B As shown, in the high-frequency module 1A according to this embodiment, power amplifiers 11 and 12, duplexers 61 to 64, and matching circuits 31, 32, 41, 42, 71, and 72 are each an example of a first circuit component and are disposed on a principal surface 91a (first principal surface). Furthermore, low-noise amplifiers 21 and 22, and switches 51, 52, and 55 are each an example of a second circuit component and are disposed on a principal surface 91b (second principal surface).

[0076] In addition, although switches 53 and 54, matching circuits 73 and 74, power supply circuit 76, and control circuit 77 are Figure 2A as well as Figure 2B Although not shown, the substrate 91 may be disposed on either the main surface 91 a or the main surface 91 b of the module substrate 91 , or may be disposed within the module substrate 91 .

[0077] In the high-frequency module 1A according to this embodiment, when looking down at the module substrate 91, the metal shield plate 81 is positioned between the transmit input terminals 111 and 112 and at least one of the second circuit components disposed on the main surface 91b. In this case, the transmit input terminals 111 and 112 are examples of second external connection terminals for inputting or outputting second high-frequency signals. Specifically, the transmit input terminals 111 and 112 are external connection terminals 150 for inputting transmit signals.

[0078] This prevents electromagnetic field coupling between the transmit input terminals 111 and 112, which transmit high-output transmit signals, and the second circuit component. This prevents strong signal interference between transmit signals or between transmit and receive signals on the main surface 91b, thereby accurately suppressing degradation in the quality of the transmit or receive signals.

[0079] Furthermore, when viewing the module substrate 91 from above, the metal shield plate 81 is positioned between the transmit input terminals 111 and 112 and the receive output terminals 121 and 122. In this case, the transmit input terminals 111 and 112 are examples of second external connection terminals for inputting or outputting a second high-frequency signal. Specifically, the transmit input terminals 111 and 112 are external connection terminals 150 for inputting transmit signals. Furthermore, the receive output terminals 121 and 122 are examples of first external connection terminals for inputting or outputting a first high-frequency signal. Specifically, the receive output terminals 121 and 122 are external connection terminals 150 for outputting receive signals.

[0080] This prevents electromagnetic field coupling between transmit input terminals 111 and 112, which transmit high-output transmit signals, and receive output terminals 121 and 122, which transmit receive signals. This prevents strong signal interference between transmit and receive signals on main surface 91b, effectively suppressing degradation in receive signal quality.

[0081] Furthermore, when looking down at the module substrate 91, the metal shield plate 81 is positioned between the transmit input terminals 111 and 112 and the antenna connection terminal 100. In this case, the transmit input terminals 111 and 112 are examples of second external connection terminals for inputting or outputting second high-frequency signals. Furthermore, the antenna connection terminal 100 is an example of a first external connection terminal for inputting or outputting first high-frequency signals. Specifically, the antenna connection terminal 100 is an external connection terminal 150 for transmitting transmit and receive signals.

[0082] This prevents electromagnetic field coupling between transmit input terminals 111 and 112, which transmit high-output transmit signals, and antenna connection terminal 100, which transmits transmit and receive signals. This prevents strong signal interference between transmit signals or between transmit and receive signals on main surface 91b, thereby accurately suppressing degradation in the quality of transmit or receive signals.

[0083] In addition, although Figure 2AAlthough not shown in (b), when at least one of the power terminal 131 and the control terminal 132 is arranged on the main surface 91b, the metal shield plate 81 may be arranged between at least one of the transmit input terminals 111, 112, the receive output terminals 121, 122, and the antenna connection terminal 100 and at least one of the power terminal 131 and the control terminal 132 when looking down at the module substrate 91. In this case, the transmit input terminals 111, 112, the receive output terminals 121, 122, and the antenna connection terminal 100 are examples of first external connection terminals for inputting or outputting the first high-frequency signal. Furthermore, the power terminal 131 is a second external connection terminal for inputting or outputting the power signal, and the control terminal 132 is a second external connection terminal for inputting or outputting the control signal.

[0084] This can suppress strong signal interference between at least one of the transmission signal and the reception signal and at least one of the power supply signal and the control signal, thereby accurately suppressing quality degradation of the transmission signal or the reception signal.

[0085] Furthermore, in the high-frequency module 1A according to this embodiment, when looking down at the module substrate 91, the metal shield plate 82 is positioned between the antenna connection terminal 100 and the reception / output terminal 122. In this case, the reception / output terminal 122 is an example of a first external connection terminal for inputting or outputting a first high-frequency signal. Furthermore, the antenna connection terminal 100 is an example of a second external connection terminal for inputting or outputting a second high-frequency signal.

[0086] This prevents electromagnetic field coupling between reception output terminal 122, which transmits reception signals, and antenna connection terminal 100, which transmits and receives transmission signals. This prevents strong signal interference between reception signals, or between reception and transmission signals, on main surface 91b, thereby accurately suppressing degradation in reception signal quality.

[0087] Furthermore, in the high-frequency module 1A according to this embodiment, the metal shield plate 83 is disposed between the reception / output terminals 122 and the antenna connection terminal 100 and the second circuit component disposed on the main surface 91b, when viewed from above the module substrate 91. In this case, the reception / output terminals 122 and the antenna connection terminal 100 are examples of second external connection terminals for inputting or outputting the second high-frequency signal.

[0088] This prevents electromagnetic field coupling between the reception output terminal 122 and the antenna connection terminal 100 and the second circuit component. Consequently, strong signal interference between received signals or between transmitted and received signals on the main surface 91b can be suppressed, thereby accurately suppressing degradation in the quality of the transmitted or received signals.

[0089] Furthermore, in the high-frequency module 1A according to this embodiment, the outer diameter 96d of the via-hole conductor 96 is greater than the thickness 81t of the metal shield plate 81. If the outer diameter 96d of the via-hole conductor 96 were smaller than the thickness 81t of the metal shield plate 81, the potential of the metal shield plate 81 would not be strongly set to the ground of the high-frequency module 1A. In contrast, this configuration strengthens the grounding of the metal shield plate 81. Consequently, strong signal interference between external connection terminals and between the external connection terminals and the second circuit component can be suppressed, thereby accurately suppressing degradation in the quality of transmitted and received signals.

[0090] Furthermore, in the high-frequency module 1A according to this embodiment, the thickness 81t of the metal shield plate 81 is greater than the thickness 95t of the metal shield layer 95. This improves the ability to suppress noise generated by circuit components of the high-frequency module 1A from flowing into other circuit components of the module 1A, rather than the ability to block external noise.

[0091] Furthermore, the outer diameter 96 d of the via-hole conductor 96 may be greater than or equal to the thickness of the metal shield plate 82 , and further, may be greater than or equal to the thickness of the metal shield plate 83 .

[0092] In addition, the thickness of the metal shielding plate 82 may also be greater than the thickness 95t of the metal shielding layer 95 , and the thickness of the metal shielding plate 83 may also be greater than the thickness 95t of the metal shielding layer 95 .

[0093] Furthermore, the height of the metal shield plates 81 to 83 from the main surface 91 b is preferably equal to or greater than the height of the external connection terminals 150 from the main surface 91 b .

[0094] This makes it possible to highly suppress strong signal interference between the external connection terminals sandwiched by any of the metal shield plates 81 to 83 and between the external connection terminals and the second circuit component.

[0095] The high-frequency module 1A according to this embodiment only needs to include, as a first circuit component arranged on the main surface 91 a , at least one of the power amplifiers 11 and 12 , duplexers 61 to 64 , matching circuits 31 , 32 , 41 , 42 , 71 to 74 , low-noise amplifiers 21 and 22 , switches 51 to 55 , a power supply circuit 76 , and a control circuit 77 . Furthermore, as a second circuit component arranged on the main surface 91 b , the high-frequency module 1A only needs to include, as a second circuit component arranged on the main surface 91 b , at least one of the power amplifiers 11 and 12 , duplexers 61 to 64 , matching circuits 31 , 32 , 41 , 42 , 71 to 74 , low-noise amplifiers 21 and 22 , switches 51 to 55 , a power supply circuit 76 , and a control circuit 77 .

[0096] Alternatively, at least two of the low-noise amplifiers 21 and 22 and the switches 53 to 55 may be included in one semiconductor IC. This can save the area of the main surface 91b and reduce the height.

[0097] [3. Structure of Metal Shield]

[0098] Next, the structure of the metal shield plates 81 to 83 included in the high-frequency module 1A according to this embodiment will be described.

[0099] Figure 3A : is a perspective view of the appearance of the metal shielding plate 81A. The metal shielding plate 81A shown in this figure is an example of the metal shielding plate 81 involved in the embodiment. The metal shielding plate 81A is erected from the main surface 91b (not shown) toward the top surface (in the negative z-axis direction) of the resin member 93 (not shown). A recessed portion 81z is formed at the end portion of the metal shielding plate 81A that is in contact with the main surface 91b among the end portions that are opposite in the vertical direction (z-axis direction) of the module substrate 91. In addition, in the metal shielding plate 81A, a recessed portion may also be formed at the end portion of the metal shielding plate 81A that is not in contact with the main surface 91b among the end portions that are opposite in the vertical direction (z-axis direction) of the module substrate 91.

[0100] In addition, the metal shielding plate 81A has a main body portion 81x that is erected from the main surface 91b toward the top surface of the resin member 93 (in the negative direction of the z axis), and a joining portion 81y that extends parallel to the main surface 91b and is joined to the ground electrode (not shown) on the main surface 91b.

[0101] The structure of the metal shield plate 81A, with the recess 81z formed between the main body 81x and the main surface 91b, ensures good fluidity of the liquid resin near the metal shield plate 81A during the process of forming the resin member 93 on the main surface 91b. This prevents the formation of gaps near the metal shield plate 81A where the resin member 93 is not formed. Furthermore, since the metal shield plate 81A and the main surface 91b are bonded together by the bonding portion 81y, the placement accuracy of the metal shield plate 81A and the bonding strength between the metal shield plate 81A and the main surface 91b are improved.

[0102] Figure 3B: is a perspective view of the appearance of the metal shielding plate 81B. The metal shielding plate 81B shown in this figure is an example of the metal shielding plate 81 involved in the embodiment. The metal shielding plate 81B is erected from the main surface 91b (not shown) toward the top surface (in the negative z-axis direction) of the resin member 93 (not shown). A recessed portion 81z is formed at the end portion of the metal shielding plate 81B that is not in contact with the main surface 91b, which is opposed in the vertical direction (z-axis direction) of the module substrate 91. In addition, in the metal shielding plate 81B, a recessed portion may also be formed at the end portion of the metal shielding plate 81B that is in contact with the main surface 91b, which is opposed in the vertical direction (z-axis direction) of the module substrate 91.

[0103] In addition, the metal shielding plate 81B has a main body portion 81x that is erected from the main surface 91b toward the top surface of the resin member 93 (in the negative direction of the z axis), and a joining portion 81y that extends parallel to the main surface 91b and is joined to the ground electrode (not shown) on the main surface 91b.

[0104] The structure of the metal shield plate 81B, with the recess 81z formed between the main body 81x and the top surface, ensures good fluidity of the liquid resin near the metal shield plate 81B during the process of forming the resin member 93 on the main surface 91b. This prevents the formation of gaps near the metal shield plate 81B where the resin member 93 is not formed. Furthermore, since the metal shield plate 81B and the main surface 91b are joined by the joint 81y, the placement accuracy of the metal shield plate 81B and the joint strength between the metal shield plate 81B and the main surface 91b are improved.

[0105] Figure 3C This is a perspective view of the appearance of a metal shield plate 81C. The metal shield plate 81C shown in this figure is an example of a metal shield plate 81 according to the embodiment. The metal shield plate 81C is erected from the main surface 91b (not shown) toward the top surface (in the negative z-axis direction) of the resin member 93 (not shown). Concave portions 81z are formed at the ends of the metal shield plate 81C that face each other in the vertical direction (z-axis direction) of the module substrate 91.

[0106] The metal shield plate 81C also includes a main body portion 81x extending vertically from the main surface 91b toward the top surface of the resin member 93 (in the negative z-axis direction), and a bonding portion 81y extending parallel to the main surface 91b and bonding to a ground electrode (not shown) on the main surface 91b. In the metal shield plate 81C, a plurality of main bodies 81x are discretely arranged with recesses 81z interposed therebetween, and a plurality of bonding portions 81y are discretely arranged with recesses 81z interposed therebetween.

[0107] The structure of the metal shield plate 81C, with the recess 81z formed between the main surface 91b and the top surface, ensures good fluidity of the liquid resin near the metal shield plate 81C during the process of forming the resin member 93 on the main surface 91b. This prevents the formation of voids near the metal shield plate 81C where the resin member 93 is not formed. Furthermore, since the metal shield plate 81C and the main surface 91b are bonded together by the bonding portion 81y, the placement accuracy of the metal shield plate 81C and the bonding strength between the metal shield plate 81C and the main surface 91b are improved.

[0108] In addition, the structural example of the metal shield plate 81 is not limited to the metal shield plates 81A to 81C described above. In addition, the direction in which the joint portion 81y is extended is not limited to the direction in which the joint portion 81y is extended. Figure 3A to Figure 3C The x-axis positive direction shown may be the x-axis negative direction, and further, the metal shield plate 81 may have both the joint portion 81y extending in the x-axis positive direction and the joint portion 81y extending in the x-axis negative direction.

[0109] Furthermore, each of the metal shield plates 82 and 83 may have a structure similar to that of the metal shield plates 81A to 81C.

[0110] [4. Effects, etc.]

[0111] As described above, the high-frequency module 1A according to this embodiment includes a module substrate 91 having main surfaces 91a and 91b facing each other, a first circuit component arranged on main surface 91a, a second circuit component arranged on main surface 91b, a plurality of external connection terminals 150 arranged on main surface 91b, and any of metal shield plates 81 to 83 provided upright on main surface 91b in a direction perpendicular to main surface 91b and set to a ground potential. The plurality of external connection terminals 150 include a first external connection terminal for inputting or outputting a first high-frequency signal and a second external connection terminal for inputting or outputting any of a power supply signal, a control signal, and a second high-frequency signal. A recess 81z is formed in at least one of the vertically opposing ends of any of the metal shield plates 81 to 83. In a plan view of the module substrate 91, any of the metal shield plates 81 to 83 is arranged between the first and second external connection terminals, or between the second external connection terminal and the second circuit component.

[0112] This prevents electromagnetic field coupling between the first and second high-frequency signals, or electromagnetic field coupling between any of the power signal, control signal, and second high-frequency signal and the second circuit component. Consequently, strong signal interference between transmitted and received signals, between transmitted and received signals, and between the high-frequency signal and the power signal or control signal on the main surface 91b can be suppressed, thereby accurately suppressing degradation in the quality of the transmitted or received signals. Furthermore, since recessed portion 81z is formed on any of the metal shielding plates 81-83, good fluidity of the liquid resin near any of the metal shielding plates 81-83 can be ensured during the process of forming the resin member 93 on the main surface 91b. Consequently, the formation of voids, etc., where resin member 93 is not formed, near any of the metal shielding plates 81-83 can be prevented.

[0113] In addition, the high-frequency module 1A may also include a via-hole conductor 96 formed inside the module substrate 91 and extending in a direction intersecting the main surface 91b and set to a ground potential, the metal shielding plate 81 is connected to the via-hole conductor 96 on the main surface 91b, and the outer diameter of the via-hole conductor 96 is greater than the thickness of the metal shielding plate 81.

[0114] This strengthens the grounding of the metal shield 81. This prevents strong signal interference between external connection terminals and between the external connection terminals and the second circuit component, and thus accurately suppresses degradation of the quality of transmitted or received signals.

[0115] Furthermore, in the high-frequency module 1A, the metal shield plate 81 may include a main body portion 81 x standing vertically on the main surface 91 b and a joint portion 81 y extending parallel to the main surface 91 b and connected to the via-hole conductor 96 on the main surface 91 b.

[0116] Thus, the metal shield plate 81 and the main surface 91 b are bonded together by the bonding portion 81 y , thereby improving the placement accuracy of the metal shield plate 81 and the bonding strength between the metal shield plate 81 and the main surface 91 b .

[0117] Alternatively, the high-frequency module 1A may further include a resin member 92 covering the main surface 91 a and at least a portion of the first circuit component, and a metal shield layer 95 covering the surface of the resin member 92 and set to a ground potential, wherein the metal shield plate 81 is thicker than the metal shield layer 95 .

[0118] This improves the ability to suppress the flow of noise generated by the circuit components of the high-frequency module 1A into other circuit components of the high-frequency module 1A, rather than the ability to shield external noise.

[0119] Furthermore, in the high-frequency module 1A, the height of the metal shield plate 81 from the main surface 91 b may be equal to or greater than the height of the external connection terminal 150 from the main surface 91 b .

[0120] This makes it possible to highly suppress strong signal interference between the external connection terminals 150 sandwiched by the metal shield plate 81 and between the external connection terminals 150 and the second circuit component.

[0121] Alternatively, in the high-frequency module 1A, the first circuit component may be the power amplifier 11, the second circuit component may be the low-noise amplifier 21, the second external connection terminal may be the transmission input terminal 111 connected to the input terminal of the power amplifier 11, and when looking down at the module substrate 91, the metal shielding plate 81 may be arranged between the transmission input terminal 111 and the second circuit component.

[0122] This can suppress electromagnetic field coupling between the transmission signal and the reception signal, thereby suppressing strong signal interference between the transmission signal and the reception signal on the main surface 91 b and accurately suppressing degradation of the reception signal quality.

[0123] Furthermore, in the high-frequency module 1A, the first circuit component may be the power amplifier 11, and the second circuit component may be the low-noise amplifier 21. The high-frequency module 1A may further include an antenna connection terminal 100, and a switch 55 for switching between connection and disconnection between the antenna connection terminal 100 and the power amplifier 11, and between connection and disconnection between the antenna connection terminal 100 and the low-noise amplifier 21. The first external connection terminal may be the antenna connection terminal 100, and the second external connection terminal may be a transmit input terminal 111 connected to the input terminal of the power amplifier 11 or a receive output terminal 121 connected to the output terminal of the low-noise amplifier 21. In a plan view of the module substrate 91, the metal shield plate 83 may be arranged between the antenna connection terminal 100 and the transmit input terminal 111, or the metal shield plate 82 may be arranged between the antenna connection terminal 100 and the receive output terminal 121.

[0124] This can suppress electromagnetic field coupling between the transmission signal and the reception signal, thereby suppressing strong signal interference between the transmission signal and the reception signal on the main surface 91 b and accurately suppressing degradation of the reception signal quality.

[0125] Furthermore, the communication device 5 includes an RFIC 3 that processes high-frequency signals transmitted and received by the antenna 2 , and a high-frequency module 1 that transmits high-frequency signals between the antenna 2 and the RFIC 3 .

[0126] This makes it possible to provide the communication device 5 that suppresses degradation in the quality of a transmission signal or a reception signal.

[0127] (Other embodiments, etc.)

[0128] While the high-frequency module and communication device according to the present invention have been described above by way of embodiments, examples, and variations, the present invention is not limited to these embodiments, examples, and variations. Other embodiments achieved by combining arbitrary components of the above embodiments, examples, and variations, variations resulting from various modifications conceived by those skilled in the art to the above embodiments, examples, and variations without departing from the spirit of the present invention, and various devices incorporating the above high-frequency module and communication device are also encompassed by the present invention.

[0129] For example, in the high-frequency modules and communication devices according to the above-described embodiments, examples, and modifications, other circuit elements and wirings may be inserted between paths connecting the circuit elements and signal paths disclosed in the drawings.

[0130] Industrial applicability

[0131] The present invention can be widely used in communication devices such as mobile phones as a high-frequency module disposed in a front-end unit that supports multiple frequency bands.

[0132] Description of Reference Numerals

[0133] 1. 1A high frequency module;

[0134] 2 antennas;

[0135] 3 RF signal processing circuit (RFIC);

[0136] 4 baseband signal processing circuit (BBIC);

[0137] 5 communication devices;

[0138] 11, 12 power amplifier;

[0139] 21, 22 low noise amplifier;

[0140] 30 output matching circuit;

[0141] 31, 32, 41, 42, 71, 72, 73, 74 matching circuits;

[0142] 31C, 32C, 41C, 42C capacitors;

[0143] 31L, 32L, 41L, 42L inductors;

[0144] 40 Input matching circuit;

[0145] 51, 52, 53, 54, 55 switches;

[0146] 61, 62, 63, 64 duplexers;

[0147] 61R, 62R, 63R, 64R receive filters;

[0148] 61T, 62T, 63T, 64T transmit filters;

[0149] 76 power circuit;

[0150] 77 control circuit;

[0151] 81, 81A, 81B, 81C, 82, 83 metal shielding plates;

[0152] 81t, 95t thickness;

[0153] 81x main body;

[0154] 81y junction;

[0155] 81z concavity;

[0156] 91 module baseboard;

[0157] 91a, 91b main surfaces;

[0158] 92, 93 resin components;

[0159] 94 ground electrode;

[0160] 94P ground conductor pattern;

[0161] 95 metal shielding layer;

[0162] 96 via conductor;

[0163] 96d outer diameter;

[0164] 100 antenna connection terminal;

[0165] 111, 112 send input terminals;

[0166] 121, 122 receiving output terminals;

[0167] 131 power terminal;

[0168] 132 control terminals;

[0169] 150 external connection terminals;

[0170] 150g ground terminal;

[0171] AR, BR, CR, DR receiving paths;

[0172] AT, BT, CT, DT sending paths;

[0173] ETR Transceiver Path.

Claims

1. A high-frequency module comprising: The module substrate has a first main surface and a second main surface facing each other; a first circuit component disposed on the first main surface; a second circuit component disposed on the second main surface; a plurality of external connection terminals arranged on the second main surface; and The metal shield plate is provided upright on the second main surface and in a direction perpendicular to the second main surface and is set to a ground potential. The plurality of external connection terminals include: a first external connection terminal for inputting or outputting a first high-frequency signal; and a second external connection terminal for inputting or outputting any one of a power supply signal, a control signal, and a second high-frequency signal. A recess is formed in at least one of the ends of the metal shielding plate that are opposed to each other in the vertical direction. In a plan view of the module substrate, the metal shield plate is arranged between the first external connection terminal and the second external connection terminal or between the second external connection terminal and the second circuit component.

2. The high-frequency module according to claim 1, wherein The module further comprises: a via conductor formed inside the module substrate, extending in a direction intersecting the second main surface, and set to a ground potential; The metal shield is connected to the via-hole conductor on the second main surface. The outer diameter of the via-hole conductor is greater than or equal to the thickness of the metal shielding plate.

3. The high-frequency module according to claim 2, wherein: The metal shielding plate has: a main body portion, arranged upright in a direction perpendicular to the second main surface; and The bonding portion extends parallel to the second main surface and is connected to the via-hole conductor on the second main surface.

4. The high-frequency module according to any one of claims 1 to 3, wherein Also features: a resin member covering the first main surface and at least a portion of the first circuit component; and The metal shielding layer, covering the surface of the resin member, is set to ground potential, The metal shielding plate is thicker than the metal shielding layer.

5. The high-frequency module according to any one of claims 1 to 3, wherein A height of the metal shield plate from the second main surface is greater than or equal to a height of the second external connection terminal from the second main surface.

6. The high-frequency module according to any one of claims 1 to 3, wherein The first circuit component is a power amplifier, The second circuit component is a low noise amplifier, The second external connection terminal is a transmission input terminal connected to the input terminal of the power amplifier. In a plan view of the module substrate, the metal shield plate is arranged between the second external connection terminal and the second circuit component.

7. The high-frequency module according to any one of claims 1 to 3, wherein The first circuit component is a power amplifier, The second circuit component is a low noise amplifier, The high frequency module further comprises: Antenna connection terminal; and a switch for switching between connection and disconnection between the antenna connection terminal and the power amplifier, and for switching between connection and disconnection between the antenna connection terminal and the low noise amplifier, The first external connection terminal is an antenna connection terminal, The second external connection terminal is a transmission input terminal connected to the input terminal of the power amplifier or a reception output terminal connected to the output terminal of the low noise amplifier. In a plan view of the module substrate, the metal shield plate is arranged between the first external connection terminal and the second external connection terminal.

8. A communication device comprising: RF signal processing circuit, which processes the high frequency signal transmitted and received by the antenna; and In the high-frequency module according to any one of claims 1 to 7, the high-frequency signal is propagated between the antenna and the RF signal processing circuit.

Images