High-frequency circuits and wireless devices

Abstract

The present invention provides a high-frequency circuit comprising: a first ground layer having a conductor formed thereon; a second ground layer having a conductor formed thereon; and a conductive pattern layer having a first conductive pattern formed thereon, wherein the first ground layer, the second ground layer, and the conductive pattern layer are stacked, and the conductive pattern layer includes a first region, wherein the distance to the conductor formed on the second ground layer is longer than the distance to the conductor formed on the first ground layer in the stacking direction of the first ground layer, the second ground layer, and the conductive pattern layer, and at least a portion of the first conductive pattern is disposed in the first region.

Description

Technical Field

[0001] This disclosure relates to high-frequency circuits and wireless devices.

[0002] This application claims priority based on Japanese Patent Application No. 2020-134329, filed on August 7, 2020, the entire contents of which are hereby cited. Background Technology

[0003] Japanese Patent Application Publication No. 2010-87830 (Patent Document 1) discloses a wireless device in which two SIRs are mounted on a multilayer substrate. In this wireless device, two SIRs are formed on different layers of the multilayer substrate. When viewed from the stacking direction of the multilayer substrate, the two SIRs are formed in an overlapping manner.

[0004] Prior art literature

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2010-87830 Summary of the Invention

[0007] The high-frequency circuit disclosed herein includes: a first ground layer having a conductor formed thereon; a second ground layer having a conductor formed thereon; and a conductive pattern layer having a first conductive pattern formed thereon. The first ground layer, the second ground layer, and the conductive pattern layer are stacked. The conductive pattern layer includes a first region, which is a region in the stacking direction of the first ground layer, the second ground layer, and the conductive pattern layer where the distance to the conductor formed on the second ground layer is longer than the distance to the conductor formed on the first ground layer. At least a portion of the first conductive pattern is disposed in the first region.

[0008] One aspect of this disclosure can be implemented as a semiconductor integrated circuit that is part or all of a high-frequency circuit, or as a communication system that includes a high-frequency circuit. Attached Figure Description

[0009] Figure 1 This is a schematic cross-sectional view of a filter formed by conductive patterns.

[0010] Figure 2 This is a top view that schematically illustrates an example of a bandpass filter formed by conductive patterns.

[0011] Figure 3 This is a top view showing the configuration of a wireless device according to an embodiment of the present disclosure.

[0012] Figure 4 yes Figure 3 A cross-sectional view of line IV-IV in the diagram.

[0013] Figure 5 This is a top view showing the configuration of a wireless device according to a modified embodiment of the present disclosure.

[0014] Figure 6 yes Figure 5 A cross-sectional view of the VI-VI line. Detailed Implementation

[0015] Wireless devices, for example, extract components of a specific frequency band from received radio waves and perform various signal processing operations. Filters are devices used to extract signal waves of a specific frequency band.

[0016] There are various types of filters. On the other hand, from the perspective of miniaturization of wireless devices, stepped impedance resonators (SIRs) are sometimes used as filters. An SIR is a type of patterned filter composed of conductive patterns formed on a substrate. It is composed of a low-impedance portion with a wide pattern width and a high-impedance portion with a narrow pattern width.

[0017] [The technical problem this disclosure aims to solve]

[0018] In multilayer substrates, when two silicon infrared rectifiers (SIRs) are formed on the same layer, the size of the multilayer substrate needs to be increased to ensure sufficient space for their configuration. In contrast, in the wireless device described in Patent Document 1, the two SIRs are formed on different layers. Therefore, it is not necessary to increase the size of the multilayer substrate, enabling miniaturization of the wireless device.

[0019] However, the width of the conductive pattern constituting the SIR is closely related to the frequency characteristics of the SIR. Therefore, in the wireless device described in Patent Document 1, the width of the conductive pattern becomes too wide depending on the cutoff frequency that should be set, making it difficult to configure the conductive pattern, or the wireless device becomes too large.

[0020] To eliminate this problem, one could consider reducing the width of the conductive pattern. However, in this case, it becomes difficult to set an arbitrary characteristic impedance in a SIR, or to form a conductive pattern. Therefore, in patterned filters, it is difficult to maintain an arbitrary characteristic impedance and freely design the cutoff frequency or passband width, etc.

[0021] This disclosure was made to solve the aforementioned technical problems, and its purpose is to provide a high-frequency circuit and wireless device that can achieve the desired characteristic impedance in a patterned filter and improve the freedom of device design.

[0022] [The Effects of This Disclosure]

[0023] According to this disclosure, a desired characteristic impedance can be achieved in a patterned filter, thereby increasing the degree of freedom in device design.

[0024] [Description of embodiments of this disclosure]

[0025] First, the contents of the embodiments of this disclosure will be described.

[0026] (1) The high-frequency circuit according to the embodiments of the present disclosure includes: a first ground layer on which a conductor is formed; a second ground layer on which a conductor is formed; and a conductive pattern layer on which a first conductive pattern is formed, wherein the first ground layer, the second ground layer and the conductive pattern layer are stacked, and the conductive pattern layer includes a first region, wherein the distance to the conductor formed on the second ground layer is longer than the distance to the conductor formed on the first ground layer in the stacking direction of the first ground layer, the second ground layer and the conductive pattern layer, and at least a portion of the first conductive pattern is disposed in the first region.

[0027] When a filter is formed from a conductive pattern, the characteristic impedance and frequency characteristics of the filter vary depending on the width of the conductive pattern, and sometimes the desired characteristics cannot be obtained.

[0028] In contrast, by configuring at least a portion of the first conductive pattern in the first region, the distance from the first conductive pattern to the ground plane can be extended. If the distance from the first conductive pattern to the ground plane is extended, the characteristic impedance of the first conductive pattern increases. Therefore, by extending the distance from the first conductive pattern to the ground plane, the decrease in the characteristic impedance of the first conductive pattern caused by increasing its width can be offset. Thus, the width of the first conductive pattern can be increased while maintaining the desired characteristic impedance. Therefore, the desired impedance can be achieved in the patterned filter, and the freedom of device design is increased.

[0029] Furthermore, when forming a SIR with coupled lines from conductive patterns, achieving a wide passband requires long coupled lines, increasing the substrate size. To maintain the passband width while shortening the length of the coupled lines, the coupling strength of the coupled lines needs to be enhanced. To enhance coupling strength, the width of the conductive pattern can be increased. This allows for a shorter coupled line length and the setting of the desired passband width. On the other hand, corresponding to increasing the width of the conductive pattern, the characteristic impedance of the SIR decreases.

[0030] In contrast, by configuring at least a portion of the first conductive pattern in the first region, the reduction in characteristic impedance of the first conductive pattern caused by increasing its width can be offset by extending the distance from the first conductive pattern to the ground layer. This allows for a reduction in the length of the coupling line while maintaining the desired characteristic impedance. Therefore, the desired impedance can be achieved in the patterned filter, increasing the freedom of device design.

[0031] (2) It can also be configured as follows: a second conductive pattern different from the first conductive pattern is further formed on the conductive pattern layer, the conductive pattern layer includes a second region, the second region is a region in the stacking direction where the distance to the conductor formed on the first ground layer is longer than the distance to the conductor formed on the second ground layer, and the second conductive pattern is disposed in the second region.

[0032] With this configuration, the distances to the ground layer differ between the first conductive pattern in the first region and the second conductive pattern in the second region. Therefore, two filters with significantly different cutoff frequencies or passband widths can be constructed from the first and second conductive patterns formed on the same substrate. This further increases the freedom of device design.

[0033] (3) It can also be that the first conductive pattern is arranged across the first region and the second region.

[0034] Based on this configuration, a filter with a high degree of design freedom can be set in the conductive pattern layer, with the first conductive pattern spanning the first region and the second region.

[0035] (4) It can also be configured as follows: the first conductive pattern constitutes part of the first filter, the second conductive pattern constitutes part of the second filter, and the relative bandwidth of the second filter is narrower than that of the first filter.

[0036] In a bandpass filter, the relative bandwidth is represented by the passband width divided by the center frequency. A wide relative bandwidth bandpass filter requires a longer coupling line, while a narrow relative bandwidth bandpass filter requires a shorter coupling line. Based on the configuration where the relative bandwidth of the second filter is narrower than that of the first filter, the first conductive pattern constituting the wide-bandwidth first filter can be positioned in a first region that extends the length of the coupling line, and the second conductive pattern constituting the narrow-bandwidth second filter can be positioned in a second region that shortens the length of the coupling line. Therefore, the desired relative bandwidth can be achieved in each filter, increasing the freedom of device design.

[0037] (5) It can also be configured as follows: the first region is set such that the characteristic impedance of the first conductive pattern is constant relative to the frequency of the target signal.

[0038] With this configuration, the desired impedance can be achieved in the transmission path of the target signal, including the filter, and the degree of freedom in device design can be increased.

[0039] The wireless device according to the embodiments of this disclosure includes the above-described high-frequency circuit.

[0040] With this configuration, the desired characteristic impedance in a patterned filter can be achieved in a wireless device, thus increasing the freedom of device design.

[0041] The embodiments of this disclosure will now be described using the accompanying drawings. It should be noted that the same or equivalent parts in the drawings are labeled with the same symbols, and their descriptions will not be repeated. Furthermore, at least a portion of the embodiments described below may be combined in any way.

[0042] First, the process of conceiving the high-frequency circuit and wireless device disclosed herein will be explained.

[0043] Figure 1 This is a schematic cross-sectional view of a filter formed by conductive patterns. (See reference...) Figure 1 The filter 100 includes: a linear conductive pattern 1002 formed on the surface of a plate-shaped dielectric layer 1001; and a ground layer 1003 formed on the back side of the dielectric layer 1001. The filter 100 is a patterned filter with a microstrip line structure. In the filter 100, the constants of the LC circuit constituting the filter are replaced by conductive patterns. Specifically, L (coil) is replaced by a high-impedance conductive pattern, and C (capacitor) is replaced by a low-impedance conductive pattern.

[0044] Here, the characteristic impedance of the conductive pattern 1002 is mainly affected by the width W of the conductive pattern 1002 and the distance H from the conductive pattern 1002 to the ground layer 1003. If the distance H is constant, the wider the width W, the lower the characteristic impedance, and the narrower the width W, the higher the characteristic impedance.

[0045] On the other hand, if the width W is constant, the longer the distance H, the higher the characteristic impedance; and the shorter the distance H, the lower the characteristic impedance. Therefore, in the design of the filter 100, the characteristic impedance can be set by adjusting the width W and the distance H of the conductive pattern 1002.

[0046] However, if the width W of the conductive pattern 1002 becomes too wide, it becomes spatially difficult to arrange the conductive pattern 1002 on the substrate, and the size of the filter 100 also increases. On the other hand, if the width W of the conductive pattern 1002 becomes too narrow, it becomes difficult to manufacture the conductive pattern 1002. Therefore, depending on the characteristic impedance of the conductive pattern 1002 to be set in the filter 100, it is sometimes difficult to achieve the desired width W of the conductive pattern 1002.

[0047] Figure 2 This is a top view schematically illustrating an example of a bandpass filter formed by conductive patterns. (See reference...) Figure 2 The bandpass filter 200 is, for example, a stepped impedance resonator (SIR) formed by combining low-impedance sections 2001A and 2001B and high-impedance sections 2002A and 2002B. The low-impedance sections 2001A and 2001B are composed of conductive patterns with a width W1, and the high-impedance sections 2002A and 2002B are composed of conductive patterns with a width W2 narrower than W1. The high-impedance sections 2002A and 2002B are arranged with a small gap to form a coupling line 2003. Furthermore, all of the low-impedance sections 2001A and 2001B and the high-impedance sections 2002A and 2002B are composed of… Figure 1 The conductive pattern 1002 shown is formed.

[0048] The characteristic impedances of the low-impedance sections 2001A and 2001B and the high-impedance sections 2002A and 2002B are different. In the SIR, the resonant condition, i.e. the cutoff frequency, is set by adjusting the width and length of the low-impedance sections 2001A and 2001B and the high-impedance sections 2002A and 2002B.

[0049] Generally, the coupling lines of a bandpass filter are coupled through electromagnetic fields, but... Figure 2 In the coupling line 2003 of the bandpass filter 200 shown, in order to flow current to enhance magnetic field-based coupling, and Figure 1 The ground plane 1003 is connected as shown.

[0050] Here, the length of the coupling line 2003 affects the passband width in the bandpass filter. The shorter the coupling line 2003, the narrower the passband width; the longer the coupling line 2003, the wider the passband width. Therefore, in the design of a bandpass filter 200 using an SIR with a coupling line 2003, the length of the coupling line 2003 can be adjusted to set any passband width.

[0051] On the other hand, if the coupling line 2003 becomes too short, it becomes difficult to form the coupling line 2003 on the substrate during manufacturing. In this case, it is considered to lengthen the coupling line 2003, thereby reducing its coupling strength. To reduce the coupling strength of the coupling line 2003, the width of the conductive pattern needs to be reduced. However, if the width of the conductive pattern is reduced, the characteristic impedance changes, and the cutoff frequency of the bandpass filter deviates from the set value.

[0052] If the coupling line 2003 becomes too long, the substrate size needs to be increased to ensure sufficient space for its configuration. In this case, shortening the coupling line 2003 is considered, thereby increasing its coupling strength. To increase the coupling strength, the width of the conductive pattern needs to be increased. However, increasing the width of the conductive pattern changes the characteristic impedance, causing the cutoff frequency of the bandpass filter to deviate from the set value.

[0053] Therefore, depending on the desired passband width, it is sometimes difficult to make the coupling line 2003 the desired length.

[0054] In the prior art, if a filter is to be formed from a conductive pattern, it is difficult to achieve the desired cutoff frequency or passband width due to limitations in the width of the conductive pattern or the length of the coupling line. Based on this process, the wireless device of this disclosure is conceived.

[0055] The high-frequency circuit and wireless device involved in the embodiments of this disclosure will be described below.

[0056] Figure 3 This is a top view illustrating the configuration of a wireless device according to an embodiment of this disclosure. Figure 3 As an example, a wireless device 1 mounted on a car is shown.

[0057] Reference Figure 3 The wireless device 1 includes a high-frequency circuit 2, an input / output terminal 1A, an input / output terminal 1B for television, an input / output terminal 1C for GPS (Global Positioning System), and an input / output terminal 1D for radio.

[0058] Input / output terminal 1A is connected to an antenna (not shown) via a high-frequency cable 1E. The antenna is installed, for example, on the windshield, rear window, or roof of a vehicle, to receive RF signals (Radio Frequency Signal).

[0059] The television input / output terminal 1B, the GPS input / output terminal 1C, and the radio input / output terminal 1D are respectively connected to an in-vehicle device (not shown) capable of providing wireless signal services using the corresponding frequency band. For example, the television input / output terminal 1B is connected to a television tuner or other in-vehicle device corresponding to a television; the GPS input / output terminal 1C is connected to a car navigation system or other in-vehicle device corresponding to a GPS; and the radio input / output terminal 1D is connected to a radio tuner or other in-vehicle device corresponding to an AM / FM radio.

[0060] The high-frequency circuit 2 splits the radio waves received at input / output terminal 1A into signals for a television vehicle-mounted device, a GPS vehicle-mounted device, and a radio vehicle-mounted device. It should be noted that the high-frequency circuit 2 can also combine RF signals transmitted from vehicle-mounted devices corresponding to television and GPS, and output them from input / output terminal 1A.

[0061] Figure 4 yes Figure 3 A cross-sectional view of line IV-IV in the diagram. For ease of understanding, in... Figure 4 In the diagram, everything except filters is represented by dashed lines. Figure 3 The top view shown.

[0062] Reference Figure 4 The high-frequency circuit 2 is composed of a multilayer substrate 10.

[0063] Multilayer substrate

[0064] The multilayer substrate 10 is, for example, a printed wiring board. The multilayer substrate 10 includes, in the stacking direction from the main surface side, a layer L1 on which a conductive pattern 201 is formed, a dielectric layer 101A, a first ground layer 102, a dielectric layer 101B, an intermediate ground layer 103, a dielectric layer 101C, and a second ground layer 104.

[0065] Layer L1, on which the conductive pattern 201 is formed, constitutes the main surface of the multilayer substrate 10, including the conductive pattern, etc. Hereinafter, the layer on which the conductive pattern 201 is formed will be referred to as the conductive pattern layer. The conductive pattern 201 is an example of a first conductive pattern.

[0066] A dielectric layer 101A is disposed between the conductive pattern layer L1 and the first ground layer 102, thereby insulating the conductive pattern layer L1 from the first ground layer 102. The dielectric layer 101A is made of, for example, glass epoxy resin. The dielectric layers 101B and 101C, described later, are also disposed in the same manner.

[0067] The first ground layer 102 is a layer different from the conductive pattern layer L1 and is located below the conductive pattern layer L1. In the multilayer substrate 10, the first ground layer 102 is disposed between the dielectric layer 101A and the dielectric layer 101B. The first ground layer 102 is a layer in which a thin conductive material, such as copper foil, is formed. The intermediate ground layer 103 and the second ground layer 104, described later, are also formed in the same way. The first ground layer 102 has a shape in which a portion of the conductive material has been removed. The removed portion is called a void.

[0068] The dielectric layer 101B is disposed between the first ground layer 102 and the intermediate ground layer 103, thereby insulating the first ground layer 102 from the intermediate ground layer 103.

[0069] An intermediate ground layer 103 is disposed between dielectric layers 101B and 101C. The intermediate ground layer 103 has a shape in which a portion of the conductor has been removed. The removed portion is called a void.

[0070] The dielectric layer 101C is disposed between the intermediate ground layer 103 and the second ground layer 104, thereby insulating the intermediate ground layer 103 from the second ground layer 104.

[0071] The second ground layer 104 is a layer different from the conductive pattern layer L1 and the first ground layer 102, and is located below the first ground layer 102. In the multilayer substrate 10, the second ground layer 104 is disposed below the dielectric layer 101C, forming the back side of the multilayer substrate 10. Therefore, in the stacking direction, the distance from the conductive pattern layer L1 to the second ground layer 104 is longer than the distance from the conductive pattern layer L1 to the first ground layer 102. The second ground layer 104 is provided to cover approximately the entire area of ​​the multilayer substrate 10 when viewed from above. The second ground layer 104 is electrically connected to the first ground layer 102 and the intermediate ground layer 103 through vias.

[0072] Reference Figure 3 and Figure 4 The conductive pattern layer L1 includes a first region 105, which is a region in the stacking direction of the first ground layer 102, the second ground layer 104, and the conductive pattern layer L1 where the distance to the conductor formed on the second ground layer 104 is longer than the distance to the conductor formed on the first ground layer 102. For example, the first region 105 is a region opposite to the second ground layer 104 in the stacking direction of the layers in the multilayer substrate 10. Specifically, the first region 105 is rectangular when viewed from above and is an area of ​​arbitrary size disposed in the conductive pattern layer L1. Figure 4As shown, in the first grounding layer 102 and the intermediate grounding layer 103, no conductor is provided in the region corresponding to the first region 105, forming a void. In the stacking direction, dielectric layers 101A, 101B, 101C and a second grounding layer 104 are disposed below the first region 105.

[0073] The conductive pattern layer L1 includes a second region 107, which is a region in the stacking direction of the first ground layer 102, the second ground layer 104, and the conductive pattern layer L1 where the distance to the conductor formed on the first ground layer 102 is shorter than the distance to the conductor formed on the second ground layer 104. For example, the second region 107 is a region opposite to the first ground layer 102 in the stacking direction of the layers in the multilayer substrate 10. Specifically, the second region 107 is a region in the conductive pattern layer L1 other than the first region 105. The second region 107 is an independent region in the conductive pattern layer L1 that does not overlap with the first region 105. Figure 4 As shown, in the first ground layer 102, a conductor is provided in the region corresponding to the second region 107. In the stacking direction, a dielectric layer 101A and the first ground layer 102 are disposed below the second region 107.

[0074] [filter]

[0075] Refer again Figure 3 The conductive pattern formed on the conductive pattern layer L1 of the multilayer substrate 10 constitutes part of the filter. In the multilayer substrate 10, the conductive pattern 201 constitutes part of the television filter. Specifically, the television filter is composed of the conductive pattern 201 and the second ground layer 104. The television filter is an example of the first filter. The television filter is configured, for example, with a passband of 470MHz to 710MHz. In this case, the passband width of the television filter is 240MHz, the center frequency is 590MHz, and the relative bandwidth is 0.41.

[0076] The conductive pattern 201 includes low-resistance portions 2011 and 2012 and high-resistance portions 2013 and 2014.

[0077] The low-impedance sections 2011 and 2012 are roughly rectangular when viewed from above, and are arranged side by side with gaps between them.

[0078] The wireless device 1 further includes capacitors 1F1 and 1F2. The low-impedance section 2011 is connected to the input / output terminal 1A via capacitor 1F1. The low-impedance section 2012 is connected to the television input / output terminal 1B via capacitor 1F2.

[0079] The width of the conductive patterns in the high-impedance sections 2013 and 2014 is narrower than that in the low-impedance sections 2011 and 2012. The width and length of the conductive patterns in the high-impedance sections 2013 and 2014, as well as the width and length of the conductive patterns in the low-impedance sections 2011 and 2012, are appropriately set according to the desired cutoff frequency.

[0080] When viewed from above, the high-impedance sections 2013 and 2014 are roughly L-shaped and arranged side-by-side between the low-impedance sections 2011 and 2012. A portion of the high-impedance sections 2013 and 2014 are arranged in parallel with a small gap to form a coupling line 2016. In the coupling line 2016, the high-impedance sections 2013 and 2014 are electromagnetically coupled.

[0081] The length of the resonator, which is composed of low-impedance sections 2011 and 2012 and high-impedance sections 2013 and 2014, is set to 1 / 4 of the wavelength at the center frequency of the passband. Alternatively, the length of the resonator can be 1 / 2 of the wavelength at the center frequency of the passband.

[0082] At least a portion of the conductive pattern 201 is disposed in the first region 105 and electrically connected to the second ground layer 104. For example, the conductive pattern 201 is disposed within the region of the first region 105, but not outside the first region 105. The coupling line 2016 in the conductive pattern 201 is connected to the ground pattern 106 formed on the conductive pattern layer L1. One or more through holes 2017 are provided in the ground pattern 106. The through holes 2017 electrically connect the ground pattern 106 to the second ground layer 104. It should be noted that... Figure 3 The “L4 GND” means that the conductive pattern 201 will be used as the second ground layer 104, which is equivalent to the fourth layer of the wiring layer, as a reference ground.

[0083] like Figure 3 and Figure 4 As shown, a conductive pattern 202, different from the conductive pattern 201, is further formed in the conductive pattern layer L1. The conductive pattern 202 is an example of a second conductive pattern. In the multilayer substrate 10, the conductive pattern 202 constitutes part of a GPS filter. Specifically, the GPS filter is composed of the conductive pattern 202 and a first ground layer 102. The GPS filter is an example of a second filter.

[0084] A conductive pattern 202 is disposed in the second region 107 and electrically connected to the first ground layer 102. For example, the conductive pattern 202 is disposed within the second region 107, but not outside the second region 107. The GPS filter is configured, for example, with a passband of 1525MHz to 1625MHz. In this case, the GPS filter has a passband width of 100MHz, a center frequency of 1575MHz, and a relative bandwidth of 0.06. That is, the relative bandwidth of the GPS filter is narrower than that of the television filter.

[0085] Specifically, the conductive pattern 202 includes low-resistance portions 2021 and 2022 and high-resistance portions 2023 and 2024.

[0086] The low-impedance sections 2021 and 2022 are roughly rectangular when viewed from above, and are arranged at intervals with straight lines.

[0087] The wireless device 1 further includes capacitors 1F3 and 1F4. The low-impedance unit 2021 is connected to the input / output terminal 1A via capacitor 1F3. The low-impedance unit 2022 is connected to the GPS input / output terminal 1C via capacitor 1F4.

[0088] The width of the conductive patterns in the high-impedance sections 2023 and 2024 is narrower than that in the low-impedance sections 2021 and 2022. The width and length of the conductive patterns in the high-impedance sections 2023 and 2024, as well as the width and length of the conductive patterns in the low-impedance sections 2021 and 2022, are appropriately set according to the desired cutoff frequency.

[0089] When viewed from above, the high-impedance sections 2023 and 2024 are roughly L-shaped and arranged side-by-side between the low-impedance sections 2021 and 2022. A portion of the high-impedance sections 2023 and 2024 are arranged in parallel with a small gap to form a coupling line 2026. In the coupling line 2026, the high-impedance sections 2023 and 2024 are electromagnetically coupled.

[0090] The length of the resonator, which is composed of low-impedance sections 2021 and 2022 and high-impedance sections 2023 and 2024, is set to 1 / 4 of the wavelength at the center frequency of the passband. Alternatively, the length of the resonator can be 1 / 2 of the wavelength at the center frequency of the passband.

[0091] The coupling line 2026 is connected to the ground pattern 108 formed on the conductive pattern layer L1. One or more through-holes 2027 are provided in the ground pattern 108. The through-holes 2027 electrically connect the ground pattern 108 to the first ground layer 102. It should be noted that... Figure 3 The “L2 GND” means that the conductive pattern 202 will be used as the first ground layer 102 of the wiring layer as a reference ground, which is equivalent to the second layer.

[0092] The high-frequency circuit 2 further includes a radio filter located in a region of the second region 107 that differs from the conductive pattern 202. Generally, a radio filter is a low-pass filter (LPF) composed of an inductor and a capacitor, but... Figure 3 The radio filter 203 shown contains an inductor composed of coils and patterns, which is connected to the radio input / output terminal 1D. Since the circuit configuration of the radio filter 203 is well-known, it will not be described in detail.

[0093] In this way, in the high-frequency circuit 2 and wireless device 1 according to this embodiment, based on the configuration of the conductive pattern 201 disposed in the first region 105, the distance from the conductive pattern 201 to the conductor formed in the second ground layer 104 can be extended. If the distance from the conductive pattern 201 to the conductor formed in the second ground layer 104 is extended, the characteristic impedance of the conductive pattern 201 increases. Therefore, by extending the distance from the conductive pattern 201 to the conductor formed in the second ground layer 104, the decrease in the characteristic impedance of the conductive pattern 201 caused by increasing the width of the conductive pattern 201 can be offset. Thus, the width of the conductive pattern 201 can be increased while maintaining the desired characteristic impedance. Therefore, the desired impedance can be achieved in the patterned filter, and the degree of freedom in device design is increased.

[0094] Furthermore, in the case where a SIR with a coupling line is formed by a conductive pattern, according to the configuration where the conductive pattern 201 is disposed in the first region 105, the reduction in characteristic impedance of the conductive pattern 201 caused by increasing the width of the conductive pattern 201 can be offset by extending the distance from the conductive pattern 201 to the conductor formed in the second ground layer 104. Therefore, the coupling line 2016 can be shortened while maintaining the desired characteristic impedance. Thus, the desired impedance can be achieved in the patterned filter, and the freedom of device design is increased.

[0095] (Modified Example)

[0096] Figure 5 This is a top view showing the configuration of a wireless device according to a modified embodiment of the present disclosure. Figure 5 The wireless device shown and Figure 3 Compared to the wireless device shown, the low impedance portions 2011, 2012 and the first region 105 in the conductive pattern 201 are smaller.

[0097] Figure 6 yes Figure 5 A cross-sectional view of the VI-VI line. For ease of understanding, in... Figure 6 In the diagram, dashed lines are used to represent all conductive patterns. Figure 5 The top view shown.

[0098] Reference Figure 5 and Figure 6 In the wireless device 1 of the modified example, the conductive pattern 201 is provided across the first region 105 and the second region 107. Specifically, in the conductive pattern 201, high impedance portions 2013 and 2014 are provided in the first region 105, and low impedance portions 2011 and 2012 are provided in the second region 107.

[0099] In this configuration, a portion of the conductive pattern 201 is also opposite the second ground layer 104 in the stacking direction. Therefore, the distance from the conductive pattern 201 to the reference ground can be extended, enabling the achievement of the desired characteristic impedance and further increasing the freedom of device design.

[0100] The above embodiments should be considered exemplary rather than limiting in all respects. The scope of this disclosure is defined not by the foregoing description but by the claims, and is intended to include all modifications within the meaning and scope equivalent to the claims.

[0101] The position of the first region 105 in the conductive pattern layer L1 is not particularly limited. The first region 105 only needs to be configured such that the characteristic impedance of the conductive pattern 201 is a constant value relative to the frequency of the target signal, i.e., the RF signal received in the antenna connected to the input / output terminal 1A. For example, the first region 105 is preferably configured such that the variation of the characteristic impedance of the conductive pattern 201 relative to the frequency of the RF signal received in the antenna connected to the input / output terminal 1A is less than 5%, more preferably less than 3%, and even more preferably less than 1%.

[0102] The above description describes the case where the high-frequency circuit 2 includes a radio filter 203. However, the high-frequency circuit 2 may also not include a radio filter 203.

[0103] In the above description, the television filter including conductive pattern 201 and the GPS filter including conductive pattern 202 were described as SIRs with coupling lines. However, in the high-frequency circuit 2, the filter is not limited to an SIR with coupling lines. The filter can be an SIR composed of a single line, or it can be a patterned filter composed of a conductor pattern of constant width. This filter is formed by a conductor pattern of constant width in the conductive pattern layer L1 of the multilayer substrate 10 and is disposed in the first region 105 opposite to the second ground layer 104 in the stacking direction.

[0104] In the above explanation, such as Figure 3As shown, the case where conductive patterns 201 and 202 are formed on the main surface of the multilayer substrate 10 (layer L1 where the filter is formed) has been described. However, the layer on which conductive patterns 201 and 202 are formed is not limited to this. Conductive patterns 201 and 202 can also be formed in a layer lower than the main surface, i.e., in the inner layer of the multilayer substrate 10. For example, in Figure 3 In the multilayer substrate 10 shown, the conductive pattern layer L1 can also be disposed on a lower layer of the main surface (in Figure 4 The first grounding layer 102 is configured in the middle layer). In this case, the first grounding layer can be configured on the two lower layers of the main surface (in the middle layer). Figure 4 The first ground layer (with an intermediate ground layer 103) can be disposed on the main surface. Alternatively, when the first ground layer is disposed on the main surface, the second ground layer can also be disposed on either of the two lower layers of the main surface (in...). Figure 4 (A layer with an intermediate ground layer 103 is configured in the middle). The first ground layer 102 and the second ground layer 104 can both be configured above the conductive pattern layer L1, or they can be configured below it. Alternatively, one of the first ground layer 102 and the second ground layer 104 can be configured above the conductive pattern layer L1, and the other can be configured below the conductive pattern layer L1. In short, as long as the distance from the conductive pattern layer L1 to the first ground layer 102 is different from the distance from the conductive pattern layer L1 to the second ground layer 104, the configuration of the conductive pattern layer L1, the first ground layer 102, and the second ground layer 104 is not limited. Figure 3 The example shown.

[0105] Additionally, in the above explanation, such as Figure 3 As shown, the first ground layer 102 has been described in the case where a portion of it has a conductor removed. However, the first ground layer 102 and the intermediate ground layer 103 are not limited to this. For example, if one of the first ground layer 102 and the second ground layer 104 is positioned above the conductive pattern layer L1 and the other is positioned below the conductive pattern layer L1, and the distance from the conductive pattern layer L1 to the second ground layer 104 is longer than the distance from the conductive pattern layer L1 to the first ground layer 102, the first ground layer 102 may also have a shape in which a conductor is formed on its entire surface. In this case, the conductive pattern layer L1 is entirely the first region 105, excluding the second region 107. In short, the conductive pattern layer L1 only needs to include the first region 105, and at least a portion of the conductive pattern 201 needs to be formed in the first region 105, where the distance to the conductor formed in the second ground layer 104 is longer than the distance to the conductor formed in the first ground layer 102.

[0106] In the above description, the case where the multilayer substrate 10 includes an intermediate ground layer 103 was described. However, the multilayer substrate 10 may include only the first ground layer 102 and the second ground layer 104, or it may not include the intermediate ground layer 103. It should be noted that when the multilayer substrate 10 includes an intermediate ground layer 103, the multilayer substrate 10 may also include multiple intermediate ground layers 103.

[0107] In the above description, the first ground layer 102 was disposed between dielectric layers 101A and 101B, and the second ground layer 104 was disposed on the back side of the multilayer substrate 10. However, the configuration of the first ground layer 102 and the second ground layer 104 is not limited to this. The second ground layer 104 can be disposed at a position lower than the first ground layer 102.

[0108] The above description focuses on the case where the wireless device 1 is mounted in a vehicle. However, the wireless device 1 is not limited to this. The wireless device 1 can be mounted on transportation equipment other than a vehicle, installed in a building, or be a portable wireless device. In short, the wireless device 1 can be any device that performs wireless communication.

[0109] The above description includes the following features.

[0110] [Postscript 1]

[0111] A wireless device comprising:

[0112] Multilayer substrate;

[0113] A filter, formed of conductive patterns in the multilayer substrate; and

[0114] A stepped impedance resonator has coupling lines formed by conductive patterns in the layer of the multilayer substrate where the filter is formed.

[0115] The multilayer substrate includes:

[0116] A first ground layer, configured on a different layer than the filter; and

[0117] The second grounding layer is disposed on a different layer than the filter and the first grounding layer.

[0118] The distance from the layer where the filter is formed to the second ground layer is longer than the distance from the layer where the filter is formed to the first ground layer.

[0119] The layer on which the filter is formed includes a first region opposite the second ground layer in the stacking direction.

[0120] The stepped impedance resonator is located in the first region.

[0121] [Postscript 2]

[0122] A wireless device comprising:

[0123] A multilayer substrate includes a first ground layer and a second ground layer disposed on a layer different from the first ground layer; and

[0124] The filter, disposed in the multilayer substrate on a layer different from the first ground layer and the second ground layer, is formed of a conductive pattern.

[0125] The distance from the layer where the filter is formed to the second ground layer is longer than the distance from the layer where the filter is formed to the first ground layer.

[0126] The layer on which the filter is formed includes a first region opposite the second ground layer in the stacking direction.

[0127] The filter is located in the first region.

[0128] Symbol Explanation

[0129] 1. Wireless device

[0130] 2. High-frequency circuits

[0131] 1A input / output terminals

[0132] 1B Television Input / Output Terminals

[0133] 1C GPS Input / Output Terminals

[0134] 1D radio input / output terminals

[0135] 1E High Frequency Cable

[0136] 1F1 to 1F4 capacitors

[0137] 10+ layer substrate

[0138] L1 is a layer with a conductive pattern (conductive pattern layer).

[0139] 100 filter

[0140] 101A, 101B, 101C dielectric layers

[0141] 102 First grounding layer

[0142] 103 Intermediate grounding layer

[0143] 104 Second Grounding Layer

[0144] 105 First District

[0145] 106, 108 Grounding Patterns

[0146] 107 Second District

[0147] 1001 Dielectric Layer

[0148] 1002 Conductive Pattern

[0149] 1003 Grounding layer

[0150] 200 bandpass filter

[0151] 201 Conductive Pattern

[0152] 2001A, 2001B Low Impedance Section

[0153] 2002A and 2002B High Impedance Sections

[0154] 2003 Coupled Circuit

[0155] 2011, 2012 Low Impedance Section

[0156] 2013, 2014 High Impedance Section

[0157] 2016 Coupled Circuit

[0158] 2017 Through Hole

[0159] 202 Conductive Pattern

[0160] 2021, 2022 Low Impedance Section

[0161] 2023, 2024 High Impedance Section

[0162] 2026 Coupled Circuit

[0163] 2027 Through Hole

[0164] 203 Radio filter.

Claims

1. A high-frequency circuit, comprising: The first grounding layer has a conductor formed on it; A second grounding layer is formed with a conductor; and A conductive pattern layer, on which a first conductive pattern is formed. The first grounding layer, the second grounding layer, and the conductive pattern layer are stacked. The distance from the conductive pattern layer to the second ground layer is longer than the distance from the conductive pattern layer to the first ground layer. The conductive pattern layer includes a first region. In the stacking direction of the first ground layer, the second ground layer, and the conductive pattern layer, the distance from the first region to the conductor formed on the second ground layer is longer than the distance from the first region to the conductor formed on the first ground layer. At least a portion of the first conductive pattern is disposed in the first region. A second conductive pattern, different from the first conductive pattern, is further formed on the conductive pattern layer. The conductive pattern layer includes a second region. In the stacking direction, of the distance from the second region to the conductor formed in the first ground layer and the distance from the second region to the conductor formed in the second ground layer, the distance from the second region to the conductor formed in the first ground layer is shorter. The second conductive pattern is disposed in the second region. The first conductive pattern forms part of the first filter. The second conductive pattern forms part of the second filter. The relative bandwidth of the second filter is narrower than that of the first filter.

2. The high-frequency circuit according to claim 1, wherein, The characteristic impedance of at least a portion of the first conductive pattern is determined by the distance from the first region to the conductor formed in the second ground layer. The characteristic impedance of the second conductive pattern is determined by the distance from the second region to the conductor formed in the first ground layer.

3. The high-frequency circuit according to claim 2, wherein, A void is formed in a portion of the first ground layer opposite to the first region in the stacking direction, and a conductor is formed in a portion of the first ground layer opposite to the second region in the stacking direction.

4. The high-frequency circuit according to claim 1, wherein, The first conductive pattern is disposed across the first region and the second region.

5. The high-frequency circuit according to any one of claims 1 to 4, wherein, The first region is configured such that the characteristic impedance of the first conductive pattern is constant relative to the frequency of the target signal.

6. A wireless device comprising: The high-frequency circuit according to any one of claims 1 to 5.

7. A high-frequency circuit, comprising: The first grounding layer has a conductor formed on it; A second grounding layer is formed with a conductor; and A conductive pattern layer, on which a first conductive pattern is formed. The first grounding layer, the second grounding layer, and the conductive pattern layer are stacked. The distance from the conductive pattern layer to the second ground layer is longer than the distance from the conductive pattern layer to the first ground layer. The conductive pattern layer includes a first region. In the stacking direction of the first ground layer, the second ground layer, and the conductive pattern layer, the distance from the first region to the conductor formed on the first ground layer is longer than the distance from the first region to the conductor formed on the second ground layer. At least a portion of the first conductive pattern is disposed in the first region. The first conductive pattern forms part of the first filter. The first filter is a stepped impedance resonator comprising a low-impedance portion formed by a part of the first conductive pattern and a high-impedance portion formed by another part of the first conductive pattern. A second conductive pattern, different from the first conductive pattern, is further formed on the conductive pattern layer. The conductive pattern layer includes a second region. In the stacking direction, of the distance from the second region to the conductor formed in the first ground layer and the distance from the second region to the conductor formed in the second ground layer, the distance from the second region to the conductor formed in the first ground layer is shorter. The second conductive pattern is disposed in the second region. The second conductive pattern forms part of the second filter. The relative bandwidth of the second filter is narrower than that of the first filter.

8. A high-frequency circuit, comprising: The first grounding layer has a conductor formed on it; A second grounding layer is formed with a conductor; and A conductive pattern layer, on which a first conductive pattern is formed. The first grounding layer, the second grounding layer, and the conductive pattern layer are stacked. The distance from the conductive pattern layer to the second ground layer is longer than the distance from the conductive pattern layer to the first ground layer. The conductive pattern layer includes a first region and a second region. In the stacking direction of the first ground layer, the second ground layer, and the conductive pattern layer, the distance from the first region to the conductor formed on the first ground layer is longer than the distance from the first region to the conductor formed on the second ground layer. In the stacking direction, of the distance from the second region to the conductor formed in the first ground layer and the distance from the second region to the conductor formed in the second ground layer, the distance from the second region to the conductor formed in the first ground layer is shorter. At least a portion of the first conductive pattern is disposed in the first region. The first conductive pattern forms part of the first filter. The first filter is a stepped impedance resonator comprising a low-impedance portion formed by a part of the first conductive pattern and a high-impedance portion formed by another part of the first conductive pattern. The high-impedance portion is disposed in the first region. The low-impedance portion is disposed in the second region. A second conductive pattern, different from the first conductive pattern, is further formed on the conductive pattern layer. The second conductive pattern is disposed in the second region. The second conductive pattern forms part of the second filter. The relative bandwidth of the second filter is narrower than that of the first filter.

9. A wireless device comprising: Multilayer substrate; A filter, formed of conductive patterns in the multilayer substrate; and A stepped impedance resonator has coupling lines formed by conductive patterns in the layer of the multilayer substrate where the filter is formed. The multilayer substrate includes: The first grounding layer, disposed on a different layer from the filter, is formed with a conductor; as well as The second grounding layer, disposed on a different layer from the filter and the first grounding layer, has a conductor formed thereon. The distance from the layer where the filter is formed to the second ground layer is longer than the distance from the layer where the filter is formed to the first ground layer. The layer on which the filter is formed includes a first region opposite to the second ground layer in the stacking direction, and a second region opposite to the first ground layer. In the stacking direction of the first ground layer, the second ground layer, and the layer on which the filter is formed, the distance from the first region to the conductor formed in the second ground layer is longer than the distance from the first region to the conductor formed in the first ground layer. In the stacking direction, of the distance from the second region to the conductor formed in the first ground layer and the distance from the second region to the conductor formed in the second ground layer, the distance from the second region to the conductor formed in the first ground layer is shorter. The stepped impedance resonator is disposed in the first region. The filter is located in the second region. The relative bandwidth of the filter is narrower than that of the stepped impedance resonator.

10. A wireless device comprising: A multilayer substrate includes a first ground layer and a second ground layer disposed on a layer different from the first ground layer; A first filter, disposed in the multilayer substrate on a layer different from the first ground layer and the second ground layer, is formed by a conductive pattern; and The second filter, disposed in the multilayer substrate in a layer different from the first and second ground layers, is formed of a conductive pattern. The distance from the layer where the filter is formed to the second ground layer is longer than the distance from the layer where the filter is formed to the first ground layer. The layer on which the filter is formed includes a first region opposite to the second ground layer in the stacking direction, and a second region opposite to the first ground layer. The first filter is disposed in the first region. The second filter is located in the second region. The relative bandwidth of the second filter is narrower than that of the first filter.

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